WO2021218395A1 - 显示面板及显示装置 - Google Patents
显示面板及显示装置 Download PDFInfo
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- WO2021218395A1 WO2021218395A1 PCT/CN2021/079697 CN2021079697W WO2021218395A1 WO 2021218395 A1 WO2021218395 A1 WO 2021218395A1 CN 2021079697 W CN2021079697 W CN 2021079697W WO 2021218395 A1 WO2021218395 A1 WO 2021218395A1
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- Prior art keywords
- display panel
- layer
- film layer
- base substrate
- electrode
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- 230000004888 barrier function Effects 0.000 claims abstract description 68
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 229910010272 inorganic material Inorganic materials 0.000 claims abstract description 13
- 239000011147 inorganic material Substances 0.000 claims abstract description 13
- 239000010410 layer Substances 0.000 claims description 221
- 239000010408 film Substances 0.000 claims description 105
- 239000010409 thin film Substances 0.000 claims description 19
- 238000005538 encapsulation Methods 0.000 claims description 6
- 238000004806 packaging method and process Methods 0.000 claims description 6
- 239000011229 interlayer Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- 238000000034 method Methods 0.000 description 9
- 229910052709 silver Inorganic materials 0.000 description 9
- 239000004332 silver Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- -1 silver ions Chemical class 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 238000004078 waterproofing Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/40—OLEDs integrated with touch screens
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
Definitions
- the present disclosure relates to the field of display technology, in particular to a display panel and a display device.
- OLED Organic Light-Emitting Diode
- FMLOC Flexible Multi-Layer On Cell
- the OLED display panel can be electrically connected to the control chip through the contact electrodes.
- the control chip is very difficult to control in a high temperature and high humidity environment. Easy to fall off.
- a plurality of contact electrodes located on the base substrate in the non-display area of the display panel;
- the inorganic film layer is located on the side of the contact electrode close to the base substrate; the inorganic film layer includes an inorganic material;
- the organic film layer is located on the side of the contact electrode away from the base substrate;
- the organic film layer is provided with openings.
- the barrier layer in at least a part of the gap between the adjacent contact electrodes, is in contact with the inorganic film layer through the opening.
- the barrier layer in the gap between any two adjacent contact electrodes, is in contact with the inorganic film layer through the opening.
- the organic film layer includes: a plurality of first through holes respectively corresponding to each of the contact electrodes in a one-to-one correspondence;
- the barrier layer includes: a plurality of second through holes respectively corresponding to each of the first through holes one-to-one;
- the contact electrode is exposed through the corresponding first through hole and the second through hole.
- the organic film layer is attached to the side of the contact electrode to protect the contact electrode.
- the organic film layer covers the edge of the surface of the contact electrode on the side facing away from the base substrate.
- the orthographic projection of the organic film layer on the base substrate is at the same level as the orthographic projection of the barrier layer on the base substrate. Within range.
- the contact electrode includes at least: a first sub-electrode and a second sub-electrode arranged in a layered manner;
- the second sub-electrode is located on a side of the first sub-electrode away from the base substrate.
- it further includes: a thin film transistor located in the display area;
- the first sub-electrode and the source of the thin film transistor are located in the same film layer.
- it further includes: a gate line coupled with the gate of the thin film transistor;
- the contact electrode is coupled with the gate line.
- it further includes: a plurality of light-emitting devices located in the display area of the display panel, an encapsulation layer, and a touch electrode layer;
- the light-emitting device is located on the base substrate, the packaging layer covers a plurality of the light-emitting devices, the barrier layer extends into the display area, and the barrier layer is located on the packaging layer away from the On one side of the base substrate, the touch electrode layer is located on the side of the barrier layer away from the base substrate.
- the barrier layer and the interlayer insulating layer include the same inorganic material.
- the base substrate includes: at least one layer of flexible substrate.
- an embodiment of the present disclosure also provides a display device, which includes: the above-mentioned display panel.
- it further includes: a control chip
- the control chip includes: a plurality of contact terminals;
- the contact terminal is directly bound and connected with the contact electrode in the display panel.
- it further includes: a flexible circuit board and a control chip;
- the control chip is bound and connected with the contact electrode through the flexible circuit board.
- FIG. 1 is a schematic top view of the structure of a display panel provided by the implementation of the present disclosure
- FIG. 2 is a partial enlarged schematic diagram of the binding area C in FIG. 1;
- Fig. 3 is a schematic cross-sectional view at the dotted line TT′ in Fig. 2;
- FIG. 4 is a schematic cross-sectional view at the dotted line L in FIG. 1;
- Fig. 5 is another schematic cross-sectional view at the dotted line TT′ in Fig. 2;
- FIG. 6 is a schematic diagram of the structure after forming each contact electrode
- FIG. 7 is a schematic top view of the structure after the organic film layer is formed.
- Fig. 8 is a schematic cross-sectional view at the dotted line TT′ in Fig. 7;
- FIG. 9 is one of the cross-sectional schematic diagrams of the display device provided by the embodiment of the disclosure.
- FIG. 10 is the second cross-sectional schematic diagram of the display device provided by the embodiment of the disclosure.
- the OLED display panel includes a display area A and a non-display area B.
- the non-display area B has a binding area C, and there are multiple contact electrodes 11 in the binding area C.
- the OLED display panel can be contacted
- the electrode 11 is electrically connected to the control chip.
- an organic film layer and a barrier layer covering the organic film layer are provided in the gap between adjacent touch electrodes 11, an organic film layer and a barrier layer covering the organic film layer are provided.
- the barrier layer may include a silicon nitride material, so the adhesion between the organic film layer and the barrier layer is poor, and the organic film layer has better water absorption In a high temperature and high humidity environment, for example, during the reliability verification process, the OLED display panel will be placed in a high temperature and high humidity environment. The organic film layer will absorb a lot of water and generate bubbles between the organic film layer and the barrier layer.
- the embodiments of the present disclosure provide a display panel and a display device.
- the specific implementations of the display panel and the display device provided by the embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings.
- the thickness and shape of each film layer in the drawings do not reflect the true ratio, and the purpose is only to illustrate the content of the present invention schematically.
- FIG. 1 is a schematic top view of the structure of the display panel provided by the implementation of the present disclosure
- FIG. 2 is a partial enlarged schematic view of the binding area C in FIG. 1
- FIG. 3 is a schematic cross-sectional view at the dotted line TT' in FIG.
- the display panel provided by the embodiment of the present disclosure includes:
- a plurality of contact electrodes 11 are located on the base substrate 10 in the non-display area B of the display panel;
- the inorganic film layer 12 is located on the side of the contact electrode 11 close to the base substrate 10; the inorganic film layer 12 includes inorganic materials;
- the organic film layer 13 is located on the side of the contact electrode 11 away from the base substrate 10;
- the barrier layer 14 is located on the side of the organic film layer 13 away from the base substrate 10; the barrier layer 14 includes an inorganic material;
- the organic film layer 13 is provided with an opening U.
- the organic film layer in the gap between the adjacent contact electrodes is removed, so that the organic film layer has openings in the gap between the adjacent contact electrodes, and the organic film is reduced.
- the water absorption of the layer prevents the barrier layer from falling off and reduces the risk of the control chip falling off.
- the display panel includes a display area A and a non-display area B.
- the contact electrodes 11 may be located in the binding area C in the non-display area B.
- the contact electrodes 11 in the binding area C are used for bonding and connection with the control chip. Therefore, the number and arrangement of the contact electrodes 11 in the binding area C can be determined according to needs.
- the number and distribution of the contact terminals of the bound control chip are set, and the number and arrangement of the contact electrodes are not limited here.
- the above-mentioned display panel may be an organic electroluminescence display panel.
- Each light-emitting device 21 may be an organic electroluminescent diode.
- a driving circuit 24 is also provided between the base substrate and the light-emitting device.
- the driving circuit 24 may include multiple thin film transistors and multiple For signal traces, the above-mentioned organic film layer 13 can extend to the display area A and cover the driving circuit 24 in the display area A to function as a flat layer, thereby providing a flatter substrate for the light-emitting device 21.
- the above-mentioned inorganic film layer 12 can extend to the display area A, can isolate the source electrode and the active layer in the thin film transistor, and function as an interlayer insulating layer.
- the organic film layer 13 generally includes organic materials, the organic film layer 13 has water absorption.
- a barrier layer 14 is provided on the side of the organic film layer 13 away from the base substrate 10, which can protect the organic film layer 13, and play a role in waterproofing and improving mechanical properties. The role of performance.
- the size of the contact electrode 11 in the binding area C is relatively small.
- the gap D is shown to be relatively narrow. In practical applications, the size of the contact electrode 11 should be smaller than the size of the gap D. Therefore, in the embodiments of the present disclosure, removing at least part of the organic film layer 13 in the gap can significantly reduce the water absorption of the organic film layer, and can greatly improve the adhesion of the barrier layer, thereby preventing the barrier layer from falling off. In turn, the risk of the control chip falling off is reduced.
- a larger opening can be provided in the flat layer, or, according to actual needs, multiple openings can be provided in the flat layer in the same gap. There is no limit to the number of openings in the flat layer of the same gap.
- the organic film layer 13 By removing at least part of the organic film layer 13 in the gap D between the adjacent contact electrodes 11, the organic film layer 13 has an opening U in the gap D between the adjacent contact electrodes 11, so that the barrier layer 14 Contact with the inorganic film layer 12 through the opening U. Since the barrier layer 14 and the inorganic film layer 12 both include inorganic materials, the adhesion between the barrier layer 14 and the inorganic film layer 12 is better, thereby increasing the adhesion of the barrier layer 14. Efforts are made to reduce the risk of the control chip falling off.
- the barrier layer 14 and the inorganic film layer 12 include the same inorganic material, so that the adhesion between the barrier layer 14 and the inorganic film layer 12 can be improved. Even better, the adhesion of the barrier layer 14 is further enhanced.
- the above-mentioned inorganic film layer 12 may include a first inorganic layer and a second inorganic layer.
- the first inorganic layer may be made of silicon oxide material, and the second inorganic layer is located on the side of the first inorganic layer away from the base substrate.
- the second inorganic layer can be made of silicon nitride material, and the above-mentioned barrier layer can also be made of silicon nitride material, and the barrier layer is in contact with the second inorganic layer, and the adhesion between the barrier layer and the second inorganic layer is good.
- the barrier layer in at least part of the gap between adjacent contact electrodes, can also be bonded to the inorganic film layer through the adhesive layer, which can also make the barrier layer have strong adhesion. To prevent the barrier layer from falling off.
- the barrier layer 14 passes through the opening U and the inorganic film Layer 12 contacts.
- the organic film layer in other positions in the binding area can also be removed, such as The organic film layer at the edge of the binding area can be removed.
- the organic film layer 13 includes: a plurality of first through holes V1 respectively corresponding to each contact electrode 11 in a one-to-one manner;
- the barrier layer 14 includes: a plurality of second through holes V2 respectively corresponding to each of the first through holes V1 in a one-to-one manner;
- the contact electrode 11 is exposed through the corresponding first through hole V1 and the second through hole V2.
- the contact electrode 11 can be exposed through the corresponding first through hole V1 and the second through hole V2 for subsequent The contact electrode 11 is coupled to the control chip.
- the contact electrode 11 includes at least: a first sub-electrode 111 and a second sub-electrode 112 that are stacked;
- the second sub-electrode 112 is located on the side of the first sub-electrode 111 away from the base substrate 10.
- the above-mentioned contact electrode 11 includes at least a first sub-electrode 111 and a second sub-electrode 112 that are stacked, and a contact electrode 11 with a corresponding thickness can be obtained.
- the thickness of the sub-electrode can be set according to the thickness of the contact electrode 11 actually required.
- the above-mentioned contact electrode 11 may also include more sub-electrodes arranged in a stack, or the contact electrode 11 may also include only one sub-electrode, and the number of sub-electrodes is not limited here.
- the sub-electrodes in the above-mentioned contact electrode 11 may include three stacked metal film layers, wherein the metal film layer located in the middle includes metal aluminum, for example, the first sub-electrode 111 and/or the second sub-electrode 112 includes three A metal film layer arranged in a laminated layer, wherein the metal film layer located in the middle includes metal aluminum.
- an anode film layer needs to be formed on the organic film layer 13 (the anode film layer is located in the display area, not shown in the figure), and then the anode film layer is wet-processed Multiple anode patterns are obtained by etching. Since the anode film layer contains metallic silver, during the wet etching process of the anode film layer, the anode film layer is immersed in the etching solution, and the silver ions in the anode film layer It will dissolve into the etching solution.
- the metal film layer located in the middle of the first sub-electrode 111 and the second sub-electrode 112 generally includes metal aluminum, if the side of the contact electrode 11 is exposed, the silver ions in the etching solution will It will undergo a substitution reaction with the metallic aluminum on the side of the contact electrode 11, and metallic silver will be precipitated. The precipitated metallic silver will drift to various positions of the display panel through the etching solution, and ultimately affect the display performance of the display panel.
- the organic film layer 13 is attached to the side of the contact electrode 11. During the wet etching process of the anode film, the side of the contact electrode 11 is no longer exposed, so that precipitation can be avoided. Metallic silver ensures that the display panel has better display performance.
- the organic film layer 13 covers the edge of the surface of the contact electrode 11 facing away from the base substrate 10, so that the side edge of the contact electrode 11 can be completely wrapped In order to ensure that during the wet etching process of the anode film, no metallic silver will be precipitated.
- FIG. 5 is another schematic cross-sectional view at the dotted line TT′ in FIG. 2. As shown in FIG. Therefore, during the wet etching process of the anode film layer, the metal aluminum on the side of the first sub-electrode 111 is no longer exposed, which can further prevent the silver ions in the etching solution from contacting the metal in the electrode 11 Aluminum contact further reduces the risk of metallic silver precipitation.
- FIG. 6 is a schematic diagram of the structure after forming each contact electrode 11
- FIG. 7 is a schematic diagram of the top structure after forming the organic film layer 13
- FIG. 8 is a schematic cross-sectional view at the dotted line TT' in FIG.
- Figures 6 to 8 in actual applications, in order to increase the adhesion of the barrier layer 14 to a greater extent, in addition to leaving part of the organic film layer 13 covering the side of the contact electrode 11, you can add The remaining organic film layer 13 in the gap D between the adjacent contact electrodes 11 is removed.
- the organic film layer 13 is completely wrapped by the barrier layer 14, thereby preventing the organic film layer 13 from absorbing water.
- the above-mentioned display panel provided by the embodiment of the present disclosure may further include: a thin film transistor located in the display area A, as shown in FIG. 4, the thin film transistor may be located in the driving circuit 24;
- the first sub-electrode 111 and the source of the thin film transistor are located in the same film layer.
- the first sub-electrode and the source of the thin film transistor can be fabricated in the same patterning process. Specifically, a metal film layer can be formed, and the metal film layer can be patterned using the same mask to obtain the first sub-electrode and the thin film transistor source. The pattern of the sub-electrode and the source of the thin film transistor can save the manufacturing process and reduce the manufacturing cost.
- the display panel may further include: a gate line 15 coupled with the gate of the thin film transistor;
- the contact electrode 11 is coupled with the gate line 15.
- the thin film transistor is generally located in the display area, one end of the gate line 15 is coupled to the gate of the thin film transistor, and the other end extends to the non-display area to be coupled to the contact electrode 11, and the control chip is tied to the contact electrode 11. After the connection is made, the control chip can be coupled to the gate of the thin film transistor. Therefore, the contact electrode 11 can transmit the control signal sent by the control chip to the gate, so that the control chip can control whether the thin film transistor is turned on. Control the light-emitting device to emit light.
- the above-mentioned display panel provided by the embodiment of the present disclosure may further include: a plurality of light-emitting devices 21 located in the display area A of the display panel, an encapsulation layer 22, and a touch electrode layer 23;
- the light emitting device 21 is located on the base substrate 10, the packaging layer 22 covers a plurality of light emitting devices 21, the barrier layer 14 extends into the display area A, and the barrier layer 14 is located on the side of the packaging layer 22 away from the base substrate 10.
- the electrode layer 23 is located on the side of the barrier layer 14 away from the base substrate 10.
- the above-mentioned barrier layer 14 functions to isolate the touch electrode layer 23 and the encapsulation layer 22 in the display area A, and the barrier layer 14 extends to the binding area of the non-display area B, and can also protect the organic film layer 13 and waterproof , The role of improving mechanical properties.
- the above-mentioned encapsulation layer may include an inorganic layer 221 and an organic layer 222 that are stacked and alternately arranged, wherein the inorganic layer 221 functions to block water vapor and oxygen, and the organic layer 222 functions to relieve stress.
- the touch electrode layer 23 may include a plurality of self-capacitance electrodes that are independent of each other; or, the touch electrode layer 23 may also include a plurality of first touch electrodes and a plurality of second touch electrodes. The second touch electrodes are insulated.
- At least one barrier wall 25 surrounding the display area A can also be provided, and the inorganic film layer 221 in the encapsulation layer 22 can cover the barrier.
- the wall 25 increases the area of the inorganic film layer 221, extends the transmission path of water vapor and oxygen, and prevents the transmission of water vapor and oxygen into the display area A.
- the above-mentioned base substrate 10 may include: at least one layer of flexible substrate 101.
- the display panel can be made to have a certain degree of flexibility, or bendable performance can be achieved.
- the base substrate 10 includes two layers of flexible substrates 101 as an example for illustration. In specific implementation, the number of layers of the flexible substrate 101 can be set according to actual needs, which is not limited here.
- a buffer layer 102 may also be provided on the side of each flexible substrate 101 close to the contact electrode 11.
- the above-mentioned display panel may further include: a first gate insulating layer 16 between the base substrate 10 and the gate line 15, and a first gate insulating layer 16 between the first gate insulating layer 16 and the inorganic film layer 12. Between the second gate insulating layer 17.
- embodiments of the present disclosure also provide a display device, including the above-mentioned display panel.
- the display device can be applied to mobile phones, tablet computers, televisions, monitors, notebook computers, digital photo frames, navigators, etc. Functional products or components. Since the principle of solving the problem of the display device is similar to the above-mentioned display panel, the implementation of the display device can refer to the implementation of the above-mentioned display panel, and the repetition will not be repeated.
- the above-mentioned display device provided by the embodiment of the present disclosure may further include: a control chip 31;
- the control chip 31 includes: a plurality of contact terminals P1;
- the contact terminal P1 is directly bonded and connected to the contact electrode 11 in the display panel.
- control chip 31 is directly bound and connected to the contact electrode 11 through the contact terminal P1, so the control chip 31 can be coupled to the signal traces (such as gate lines) in the display panel through the contact electrode 11 to control the display panel to perform images. Display, and the structure is simple, the production cost is low.
- the above-mentioned display device may further include: a flexible circuit board 32 and a control chip (not shown in the figure);
- the control chip is bonded and connected to the contact electrode 11 through the flexible circuit board 32.
- the flexible circuit board 32 may include contact pins P2, the flexible circuit board 32 can be bound and connected to the contact electrodes 11 through the contact pins P2, and one end of the flexible circuit board 32 can be bound and connected to the touch electrode 11, The other end is bent to the side of the display panel away from the display surface, and is coupled to the control chip, so that the frame of the display panel on one side of the display surface can be reduced, and a narrow frame of the display device can be realized.
- the barrier layer and the inorganic film layer are brought into contact by removing at least part of the organic film layer in the gap between the adjacent contact electrodes. Therefore, the adhesion between the barrier layer and the inorganic film layer is better, thereby increasing the adhesion of the barrier layer. In addition, by removing part of the organic film layer, the water absorption of the organic film layer is reduced, and the occurrence of the barrier layer is avoided. Falling off reduces the risk of the control chip falling off.
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Abstract
Description
Claims (16)
- 一种显示面板,其中,包括:衬底基板;多个接触电极,位于所述显示面板的非显示区域内的所述衬底基板之上;无机膜层,位于所述接触电极靠近所述衬底基板的一侧;所述无机膜层包括无机材料;有机膜层,位于所述接触电极背离所述衬底基板的一侧;阻挡层,位于所述有机膜层背离所述衬底基板的一侧;所述阻挡层包括无机材料;在相邻的所述接触电极之间的至少部分间隙中,所述有机膜层设有开口。
- 如权利要求1所述的显示面板,其中,在相邻的所述接触电极之间的至少部分间隙中,所述阻挡层通过所述开口与所述无机膜层接触。
- 如权利要求2所述的显示面板,其中,在任意两个相邻的所述接触电极之间的间隙中,所述阻挡层均通过所述开口与所述无机膜层接触。
- 如权利要求1所述的显示面板,其中,所述有机膜层包括:多个分别与各所述接触电极一一对应的第一通孔;所述阻挡层,包括:多个分别与各所述第一通孔一一对应的第二通孔;所述接触电极通过对应的所述第一通孔和所述第二通孔露出。
- 如权利要求1所述的显示面板,其中,所述有机膜层贴合设置在所述接触电极的侧边,以保护所述接触电极。
- 如权利要求5所述的显示面板,其中,所述有机膜层覆盖所述接触电极背离所述衬底基板一侧的表面的边缘。
- 如权利要求6所述的显示面板,其中,在所述非显示区域内,所述有机膜层在所述衬底基板上的正投影位于所述阻挡层在所述衬底基板上的正投影的范围内。
- 如权利要求1所述的显示面板,其中,所述接触电极,至少包括:层 叠设置的第一子电极和第二子电极;所述第二子电极位于所述第一子电极背离所述衬底基板的一侧。
- 如权利要求8所述的显示面板,其中,还包括:位于所述显示区域的薄膜晶体管;所述第一子电极与所述薄膜晶体管的源极位于同一膜层。
- 如权利要求9所述的显示面板,其中,还包括:与所述薄膜晶体管的栅极耦接的栅极线;所述接触电极与所述栅极线耦接。
- 如权利要求1所述的显示面板,其中,还包括:位于所述显示面板的显示区域内的多个发光器件,封装层,以及触控电极层;所述发光器件位于所述衬底基板之上,所述封装层覆盖多个所述发光器件,所述阻挡层延伸至所述显示区域内,且所述阻挡层位于所述封装层背离所述衬底基板的一侧,所述触控电极层位于所述阻挡层背离所述衬底基板的一侧。
- 如权利要求1~11任一项所述的显示面板,其中,所述阻挡层与所述层间绝缘层包括的无机材料相同。
- 如权利要求1~11任一项所述的显示面板,其中,所述衬底基板,包括:至少一层柔性基板。
- 一种显示装置,其中,包括:如权利要求1~13任一项所述的显示面板。
- 如权利要求14所述的显示装置,其中,还包括:控制芯片;所述控制芯片,包括:多个接触端子;所述接触端子与所述显示面板中的接触电极直接绑定连接。
- 如权利要求14所述的显示装置,其中,还包括:柔性电路板,以及控制芯片;所述控制芯片通过所述柔性电路板与所述接触电极绑定连接。
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CN111796718A (zh) | 2020-07-06 | 2020-10-20 | 京东方科技集团股份有限公司 | 触控显示面板及其制备方法、显示装置 |
CN114530474A (zh) * | 2020-10-30 | 2022-05-24 | 京东方科技集团股份有限公司 | 显示面板、显示装置及显示面板的制造方法 |
WO2022099507A1 (zh) * | 2020-11-11 | 2022-05-19 | 京东方科技集团股份有限公司 | 显示面板的制作方法及显示基板 |
CN113346031B (zh) * | 2021-05-28 | 2023-05-23 | 京东方科技集团股份有限公司 | 显示装置 |
CN114023794B (zh) * | 2021-10-27 | 2023-05-05 | 深圳市华星光电半导体显示技术有限公司 | 显示面板及显示面板的制作方法 |
CN115361855A (zh) * | 2022-08-11 | 2022-11-18 | 合肥维信诺科技有限公司 | 导电结构和显示装置 |
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