WO2021200211A1 - 半導体モジュール - Google Patents

半導体モジュール Download PDF

Info

Publication number
WO2021200211A1
WO2021200211A1 PCT/JP2021/011065 JP2021011065W WO2021200211A1 WO 2021200211 A1 WO2021200211 A1 WO 2021200211A1 JP 2021011065 W JP2021011065 W JP 2021011065W WO 2021200211 A1 WO2021200211 A1 WO 2021200211A1
Authority
WO
WIPO (PCT)
Prior art keywords
lead frame
conductor
voltage detection
switch element
detection terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2021/011065
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
潤一 木村
一裕 海原
則充 穗積
幸太郎 出口
惇 松本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Intellectual Property Management Co Ltd
Original Assignee
Panasonic Intellectual Property Management Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Intellectual Property Management Co Ltd filed Critical Panasonic Intellectual Property Management Co Ltd
Priority to US17/906,619 priority Critical patent/US20230163055A1/en
Priority to EP21780660.3A priority patent/EP4131370A4/en
Priority to CN202180023469.5A priority patent/CN115380377A/zh
Priority to JP2022511880A priority patent/JPWO2021200211A1/ja
Publication of WO2021200211A1 publication Critical patent/WO2021200211A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/481—Leadframes for devices being provided for in groups H10D8/00 - H10D48/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/811—Multiple chips on leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/461—Leadframes specially adapted for cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/886—Die-attach connectors and strap connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/944—Dispositions of multiple bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL

Definitions

  • This disclosure relates to semiconductor modules used in various electronic devices.
  • a conventional semiconductor module has a positive potential switch element connected to the positive potential end of a DC power supply and a negative potential switch element connected to the negative potential end of the DC power supply, and is a positive potential switch element and a negative potential switch element.
  • the configuration was such that AC power could be output from the connection point with.
  • the voltage detection terminal and the negative potential connected to the positive potential switch element are used to detect the voltage applied to the positive potential switch element and the voltage applied to the negative potential switch element. By using the voltage detection terminal connected to the switch element, it has become possible to capture the operating state of the semiconductor module.
  • Patent Document 1 As the prior art document information related to this application, for example, Patent Document 1 is known.
  • a voltage detection terminal connected to the positive potential switch element and a voltage connected to the negative potential switch element are connected.
  • the detection terminals will be placed close to each other. As a result, the insulation between the positive potential switch element and the negative potential switch element is reduced.
  • the conventional semiconductor module has a problem that the reliability is lowered.
  • the semiconductor module of one aspect of the present disclosure includes a first switch element having a source electrode, a gate electrode, and a drain electrode, a second switch element having a source electrode, a gate electrode, and a drain electrode. It is plate-shaped and is bonded to the source electrode of the first switch element, and is bonded to the source electrode of the second switch element which is plate-shaped and is bonded to the first conductor on which the first switch element is mounted.
  • a polyhedral exterior resin portion for sealing a part of the body, a part of the second control conductor, a part of the first voltage detection terminal, and a part of the second voltage detection terminal is provided.
  • the exterior resin portion has a first exterior surface and a second exterior surface, the first voltage detection terminal projects from the first exterior surface, and the second voltage detection terminal projects from the second exterior surface.
  • Schematic diagram showing a semiconductor module according to the embodiment of the present disclosure Top view showing a part of the semiconductor module according to the embodiment of the present disclosure. Top view showing a part of the semiconductor module according to the embodiment of the present disclosure. A perspective view showing a semiconductor module according to the embodiment of the present disclosure. Schematic diagram showing the configuration of a power supply system using a semiconductor module according to the embodiment of the present disclosure. A cross-sectional view showing a part of the configuration of the semiconductor module according to the embodiment of the present disclosure. A cross-sectional view showing a part of the configuration of the semiconductor module in the modified example of the embodiment of the present disclosure.
  • FIG. 1 is a schematic view showing a semiconductor module according to the embodiment of the present disclosure
  • FIG. 2 is a top view showing a part of the semiconductor module according to the embodiment of the present disclosure
  • FIG. 3 is a top view showing a part of the semiconductor module according to the embodiment of the present disclosure.
  • FIG. 4 is a perspective view showing a semiconductor module according to the embodiment of the present disclosure.
  • the semiconductor module 1 includes switch elements 2, 3, lead frames 4, 5, positive electrode lead frames 6, output lead frames 7, negative electrode lead frames 8, control lead frames 9, 10, first voltage detection terminals 11, and second voltage detection. It has a terminal 12 and an exterior resin portion 13.
  • the switch element 2 and the switch element 3 are made of a semiconductor.
  • the term "lead frame” is used for explanation, but the "lead frame” may be referred to as a "conductor”.
  • the switch element 2 has a source electrode 2S, a gate electrode 2G, and a drain electrode 2D.
  • the second switch element 3 has a source electrode 3S, a gate electrode 3G, and a drain electrode 3D.
  • the lead frame 4 mounts the switch element 2 by being joined to the source electrode 2S.
  • the lead frame 4 is formed in a plate shape.
  • the lead frame 5 mounts the switch element 3 by being joined to the source electrode 3S.
  • the lead frame 5 is formed in a plate shape.
  • the positive electrode lead frame 6 is connected to the drain electrode 2D of the switch element 2.
  • the output lead frame 7 is connected to each of the lead frame 4 and the drain electrode 3D of the switch element 3.
  • the negative electrode lead frame 8 is connected to the lead frame 5.
  • the control lead frame 9 is connected to the gate electrode 2G of the switch element 2.
  • the control lead frame 10 is connected to the gate electrode 3G of the switch element 3.
  • the first voltage detection terminal 11 is connected to the lead frame 4.
  • the second voltage detection terminal 12 is connected to the lead frame 5.
  • FIGS. 2 to 4 Specific example of configuration of semiconductor module 1
  • the semiconductor module 1 includes three control lead frames 9 and three control lead frames 10.
  • FIGS. 2 and 3 the exterior resin portion 13 is not shown so that the configuration of the semiconductor module 1 can be easily understood.
  • the exterior resin portion 13 (see FIG. 4) has a polyhedral shape.
  • the exterior resin portion 13 seals the switch element 2, the switch element 3, the lead frame 4, and the lead frame 5 in a state where they are not exposed to the outside.
  • the exterior resin portion 13 includes a part of the positive electrode lead frame 6, a part of the output lead frame 7, a part of the negative electrode lead frame 8, a part of the control lead frame 9, a part of the control lead frame 10, and a first voltage detection. A part of the terminal 11 and a part of the second voltage detection terminal 12 are sealed.
  • the first voltage detection terminal 11 and the lead frame 4 are formed of a single conductor, and the lead frame 4 is provided with the first voltage detection terminal 11. There is.
  • the second voltage detection terminal 12 and the lead frame 5 are formed of a single conductor, and the lead frame 5 is provided with the second voltage detection terminal 12.
  • the first voltage detection terminal 11 and the lead frame 4 may be formed of different members, and the second voltage detection terminal 12 and the lead frame 5 may be formed of different members.
  • the first exterior surface 13A and the second exterior surface 13B face each other.
  • the first voltage detection terminal 11 projects from the first exterior surface 13A in the A direction
  • the second voltage detection terminal 12 projects from the second exterior surface 13B in the B direction.
  • the A direction and the B direction are opposite directions, and the first voltage detection terminal 11 and the second voltage detection terminal 12 are drawn out from the exterior resin portion 13 in opposite directions.
  • the first exterior surface 13A and the second exterior surface 13B do not have to be completely opposed to each other, and may have a substantially opposite positional relationship.
  • the direction in which the first voltage detection terminal 11 and the second voltage detection terminal 12 are drawn out does not have to be completely opposite, and it is sufficient that the first voltage detection terminal 11 and the second voltage detection terminal 12 are drawn out in substantially opposite directions.
  • each of the first exterior surface 13A and the second exterior surface 13B does not necessarily have to be formed by one flat surface.
  • the second exterior surface 13B is composed of a first surface 131B and a second surface 132B.
  • the first surface 131B and the second surface 132B are not arranged in parallel, and an obtuse angle is formed by the first surface 131B and the second surface 132B.
  • the first exterior surface 13A also includes two surfaces forming an obtuse angle, similarly to the second exterior surface 13B.
  • first exterior surface 13A and the second exterior surface 13B are referred to as the first exterior surface 13A and the second exterior surface 13B. Consider them facing each other.
  • the linear distance between the first voltage detection terminal 11 and the second voltage detection terminal 12 is short.
  • a part of the first voltage detection terminal 11 and a part of the second voltage detection terminal 12 are sealed in the exterior resin portion 13, so that the first voltage detection terminal 11 and the second voltage detection terminal 11 and the second are sealed.
  • the creepage distance between the voltage detection terminal 12 and the voltage detection terminal 12 is longer than the linear distance.
  • the linear distance between the lead frame 4 and the lead frame 5 is short (see FIG. 3)
  • a part of the lead frame 4 and a part of the lead frame 5 are sealed in the exterior resin portion 13.
  • the creepage distance between the lead frame 4 and the lead frame 5 becomes longer than the straight line distance.
  • the power supply system 14 includes a semiconductor module 1, a DC power supply device 15, a load device 16, a control circuit 17, and gate drivers 18 and 19.
  • the DC power supply device 15 applies a positive potential voltage to the positive electrode lead frame 6 of the semiconductor module 1. Further, the DC power supply device 15 applies a negative potential voltage to the negative electrode lead frame 8 of the semiconductor module 1. Further, the load device 16 receives AC power from the output lead frame 7 by alternately turning on and off the switch element 2 and the switch element 3.
  • the control circuit 17 can control the power supply to the load device 16 by controlling the gate drivers 18 and 19 based on the voltages detected by the first voltage detection terminal 11 and the second voltage detection terminal 12.
  • the load device 16 is, for example, an AC motor or the like. Although not described in detail here, when the load device 16 is a three-phase motor, it is preferable that the three semiconductor modules 1 are provided corresponding to the U phase, the V phase, and the W phase, respectively.
  • the semiconductor module 1 includes a switch element 2, a switch element 3, a lead frame 4, a lead frame 5, a positive electrode lead frame 6, an output lead frame 7, a negative electrode lead frame 8, a control lead frame 9, and a control lead. It has a frame 10, a first voltage detection terminal 11, a second voltage detection terminal 12, and an exterior resin portion 13. Switch elements 2, 3, lead frames 4, 5, positive electrode lead frame 6, output lead frame 7, negative electrode lead frame 8, control lead frame 9, control lead frame 10, first voltage detection terminal 11, second voltage detection terminal 12 Is placed directly or indirectly on the insulating heat dissipation unit 20.
  • the first voltage detection terminal 11 and the second voltage detection terminal 12 are partially or wholly sealed by the exterior resin portion 13.
  • Each of the positive electrode lead frame 6, the output lead frame 7, and the negative electrode lead frame 8 has a shape having a larger cross-sectional area in the energizing direction than the lead frames 4 and 5. Having a large cross-sectional area in the energizing direction suppresses electrical resistance and at the same time improves thermal propagation characteristics. In this configuration, when the semiconductor module 1 is mechanically fixed to the DC power supply device 15 and the load device 16, the fixing strength can be maintained high.
  • the shape of the exterior resin portion 13 shown in FIG. 4 is an example of the shape of the exterior resin portion.
  • the shape of the exterior resin portion 13 shown in FIG. 4 is approximately a hexahedron.
  • the exterior resin portion 13 can be treated as a hexahedron.
  • each of the first exterior surface 13A and the second exterior surface 13B does not necessarily have to be a single flat surface.
  • the shape of the exterior resin portion 13 will be described using the second exterior surface 13B.
  • the second exterior surface 13B is composed of a first surface 131B and a second surface 132B.
  • the angles are different from those of the first surface 131B and the second surface 132B, and an obtuse angle is formed between the first surface 131B and the second surface 132B.
  • the first exterior surface 13A also includes two surfaces forming an obtuse angle, similarly to the second exterior surface 13B.
  • the exterior resin portion 13 does not have to be a perfect hexahedron.
  • the exterior resin portion 13 does not have to have a polyhedral shape composed of only a plurality of flat surfaces. It may be a polyhedron composed of a plurality of planes and a plurality of curved surfaces.
  • the exterior resin portion 13 seals the switch element 2, the switch element 3, the lead frame 4, and the lead frame 5 in a state where they are not exposed to the outside.
  • the exterior resin portion 13 includes a part of the positive electrode lead frame 6, a part of the output lead frame 7, a part of the negative electrode lead frame 8, a part of the control lead frame 9, a part of the control lead frame 10, and a first voltage detection. A part of the terminal 11 and a part of the second voltage detection terminal 12 are sealed.
  • a part of the positive electrode lead frame 6, a part of the output lead frame 7, a part of the negative electrode lead frame 8, a part of the control lead frame 9, a part of the control lead frame 10, a part of the first voltage detection terminal 11, A part of the second voltage detection terminal 12 is exposed from the exterior resin portion 13.
  • the entire insulating and heat-dissipating portion 20 is sealed in the exterior resin portion 13 without being exposed to the outside from the exterior resin portion 13.
  • the insulating heat radiating portion 20 may have a portion exposed to the outside from the exterior resin portion 13.
  • the switch element 2 has a source electrode 2S, a gate electrode 2G, and a drain electrode 2D.
  • the switch element 3 has a source electrode 3S, a gate electrode 3G, and a drain electrode 3D.
  • the switch elements 2 and 3 are composed of vertical type semiconductor switch elements of a metal oxide film type field effect transistor (MOSFET).
  • MOSFET metal oxide film type field effect transistor
  • the source electrode 2S is provided on the upper surface of the switch element 2.
  • the gate electrode 2G is also provided on the upper surface of the switch element. That is, the source electrode 2S and the gate electrode 2G are formed on the same surface.
  • the drain electrode 2D is provided on the lower surface of the switch element 2. That is, the drain electrode 2D is formed on the opposite surface of the surface on which the gate electrode 2G and the source electrode 2S are formed.
  • the switch element 3 has the gate electrode 3G and the source electrode 3S formed on the same surface, and the drain electrode 3D faces the surface on which the gate electrode 3G and the source electrode 3S are formed. It is formed on the surface.
  • the lead frame 4 is directly bonded to the source electrode 2S using a bonding material (not shown), and the lead frame 4 is placed on the switch element 2.
  • the lead frame 5 is directly bonded to the source electrode 3S using a bonding material (not shown), and the switch element 3 is placed on the lead frame 5.
  • the lead frames 4 and 5 are, for example, a plate-shaped copper plate or a plate-shaped copper alloy plate.
  • the lead frames 4 and 5 do not have to be rectangular as long as they are plate-shaped instead of foil-shaped or linear conductors, and bent portions and stepped portions may be formed.
  • the positive electrode lead frame 6 is connected to the drain electrode 2D. Further, the output lead frame 7 is connected to the lead frame 4 and the drain electrode 3D.
  • the connection between the drain electrode 2D and the drain electrode 3D does not use wire bonding, and is directly connected to the positive electrode lead frame 6 and the output lead frame 7 by a bonding material (not shown).
  • the connection between the drain electrode 2D and the positive electrode lead frame 6 may be performed with a bonding material (not shown), a conductor layer (not shown), or a conductor plate (not shown) interposed therebetween.
  • the connection between the drain electrode 3D and the output lead frame 7 may be performed with a bonding material (not shown), a conductor layer (not shown), or a conductor plate (not shown) interposed therebetween.
  • the conductor layer (not shown) and the conductor plate (not shown) may be conductors having a large cross-sectional area in the energizing direction, a large current capacity, and a low resistance value.
  • the connection between the drain electrode 2D and the positive electrode lead frame 6 may be in a coupled state in which a DC resistor does not substantially intervene.
  • the connection between the drain electrode 3D and the output lead frame 7 may be in a coupled state in which a DC resistor does not substantially intervene.
  • the conductor layer (not shown) and the conductor plate (not shown) need only have a current capacity equivalent to that of the lead frame 4 and the lead frame 5.
  • the conductor layer (not shown) and the conductor plate (not shown) may have a cross-sectional area in the energizing direction equivalent to that of the lead frame 4 and the lead frame 5. As long as the drain electrode 2D and the positive electrode lead frame 6 have the same potential, they may be directly connected or indirectly connected. If the drain electrode 3D and the output lead frame 7 have the same potential, they may be directly connected or indirectly connected.
  • the positive electrode lead frame 6, a part of the output lead frame 7, and the negative electrode lead frame 8 are, for example, a plate-shaped copper plate or a copper alloy plate.
  • a part of the output lead frame 7, and the negative electrode lead frame 8 it is desirable to select a shape and material having low resistance and excellent heat conduction characteristics by using aluminum or the like.
  • the positive electrode lead frame 6, a part of the output lead frame 7, and the negative electrode lead frame 8 do not need to be rectangular if they are plate-shaped instead of foil-shaped or linear conductors, and bent portions and stepped portions are formed. May be good.
  • FIG. 6 is a partial cross-sectional view showing a part of the configuration of the semiconductor module 1.
  • the positive electrode lead frame 6 and the drain electrode 2D are not directly connected, but are interposed by a conductor layer 21 provided on the heat insulating portion 20. It is connected. It is desirable that the cross-sectional area of the conductor layer 21 in the energizing direction is equal to the cross-sectional area of the positive electrode lead frame 6 in the energizing direction or larger than the cross-sectional area of the positive electrode lead frame 6 in the energizing direction.
  • the DC resistance value in the conductor layer 21 from the lead junction 6B to the drain electrode 2D is smaller than the DC resistance value from the tip 6A to the lead junction 6B of the positive electrode lead frame 6.
  • the lead joint 6B is shown as a part of the positive electrode lead frame 6, but the lead joint 6B may be formed of a welding material such as solder.
  • the lead bonding portion 6B may be formed after a part of the positive electrode lead frame 6 is melted without using a welding material different from that of the positive electrode lead frame 6 by a method of ultrasonically welding the positive electrode lead frame 6.
  • the conductor layer 21 is made of a low resistance material such as a copper plate, a copper alloy plate, or aluminum.
  • the heat insulating and heat radiating portion 20 has a laminated insulating layer 20A and a metal layer 20B provided on the lower surface of the insulating layer 20A. It is preferable that ceramic or the like having excellent thermal conductivity is used for the insulating layer 20A, and copper, a copper alloy, aluminum or the like is used for the metal layer 20B.
  • FIG. 6 illustrates the relationship between the positive electrode lead frame 6, the conductor layer 21, the switch element 2, and the lead frame 4.
  • FIG. 6 also shows the relationship between the positive electrode lead frame 6, the conductor layer 22, the switch element 3, and the lead frame 5.
  • the control lead frame 9 is connected to the gate electrode 2G.
  • the control lead frame 10 is connected to the gate electrode 3G. It is preferable that the control lead frame 9 and the gate electrode 2G are directly connected by a bonding material (not shown) without using wire bonding. Similarly, it is preferable that the control lead frame 10 and the gate electrode 3G are directly connected by a bonding material (not shown) without using wire bonding.
  • the signal transmitted from the gate driver 18 to the switch element 2 and the signal transmitted from the gate driver 19 to the switch element 3 use PWM control (pulse width modulation control) or the like, and contain a large amount of high frequency components.
  • control lead frame 9 is directly connected to the gate electrode 2G without using wire bonding, the signal transmission distance is shortened, noise mixing is suppressed, and the operational reliability of the semiconductor module 1 is improved. It will be.
  • control lead frame 10 is directly connected to the gate electrode 3G without using wire bonding, the signal transmission distance is shortened, noise contamination is suppressed, and the operational reliability of the semiconductor module 1 is improved. Will be done.
  • the cross-sectional area of the control lead frame 9 in the energizing direction and the control lead frame 10 may be smaller than the cross-sectional area in the energization direction of the positive lead frame 6, the cross-sectional area in the energization direction of the output lead frame 7, and the cross-sectional area in the energization direction of the negative electrode lead frame 8. ..
  • the first voltage detection terminal 11 is connected to the lead frame 4.
  • the second voltage detection terminal 12 is connected to the lead frame 5.
  • the first voltage detection terminal 11 and the lead frame 4 are formed of a single conductor
  • the second voltage detection terminal 12 and the lead frame 5 are formed of a single conductor.
  • the first voltage detection terminal 11 and the lead frame 4 are in an electrically connected state in which no bonding portion or wire bonding is used between them.
  • the second voltage detection terminal 12 and the lead frame 5 are in an electrically connected state in which no bonding portion or wire bonding is used between them.
  • the first voltage detection terminal 11 is provided to monitor the operating state of the switch element 2.
  • the second voltage detection terminal 12 is provided to monitor the operating state of the switch element 3.
  • the first voltage detection terminal 11 and the lead frame 4, and the second voltage detection terminal 12 and the lead frame 5 are in an extremely stable connection state. Therefore, even when mechanical or thermal stress is applied to the semiconductor module 1 from the outside, it is possible to accurately output the operating state of the semiconductor module 1 to the outside, and the operation reliability of the semiconductor module 1 is reliable. Sex improves. Since the first voltage detection terminal 11 integrated with the lead frame 4 in which a large current easily flows and heat is easily generated is exposed from the exterior resin portion 13, the lead frame 4 can be easily cooled. Therefore, the operational reliability of the semiconductor module 1 is improved. The same applies to the lead frame 5 and the second voltage detection terminal 12.
  • the first voltage detection terminal 11 and the second voltage detection terminal 12 are drawn out from different exterior surfaces (first exterior surface 13A, second exterior surface 13B) of the exterior resin portion 13.
  • first voltage detection terminal 11 is from the first exterior surface 13A of the exterior resin portion 13 in the A direction
  • second voltage detection terminal 12 is from the second exterior surface 13B facing the first exterior surface 13A of the exterior resin portion 13. , It is pulled out in the B direction, which is the opposite direction to the A direction.
  • the linear distance between the first voltage detection terminal 11 and the second voltage detection terminal 12 is short.
  • a part of the first voltage detection terminal 11 and a part of the second voltage detection terminal 12 are sealed in the exterior resin portion 13, so that the first voltage detection terminal 11 and the second voltage detection terminal are sealed.
  • the creepage distance is longer than the straight line distance with 12.
  • the high potential voltage detection terminal connected to the positive electrode lead frame 6 is pulled out from the first exterior surface 13A, and the first voltage detection terminal 11 is pulled out from the second exterior surface 13B without providing the second voltage detection terminal 12. You may be. Even in this configuration, the creepage distance between the high potential voltage detection terminal (not shown) and the first voltage detection terminal 11 is longer than the linear distance. That is, the high potential voltage detection terminal (not shown) and the first voltage detection terminal 11 are separated by the distance between the first exterior surface 13A and the second exterior surface 13B. As a result, deterioration of the insulating property between the switch element 2 and the switch element 3 can be suppressed, and the reliability of the semiconductor module 1 can be improved.
  • the semiconductor module 1 described above is provided with a single switch element 2 and a single switch element 3, is provided with a single control lead frame 9 and a single control lead frame 10, and is further provided with a single first.
  • a voltage detection terminal 11 and a single second voltage detection terminal 12 are provided.
  • the semiconductor module 1 may be provided with a plurality of switch elements 2 connected and arranged in parallel, and a plurality of switch elements 3 may be further provided.
  • a plurality of switch elements 2 When a plurality of switch elements 2 are provided, a plurality of control lead frames 9 are arranged. Similarly, when a plurality of switch elements 3 are provided, a plurality of control lead frames 10 are provided.
  • a plurality of first voltage detection terminals 11 When a plurality of first voltage detection terminals 11 are provided, at least one first voltage detection terminal 11 is used for voltage detection.
  • a plurality of second voltage detection terminals 12 at least one second voltage detection terminal 12 is used for voltage detection.
  • the lead frame 4 and the lead frame 5 are arranged side by side.
  • a current flows in the C direction (see FIG. 5) in the lead frame 4, and a current flows in the D direction (see FIG. 5) in the lead frame 5. It flows. Therefore, by arranging the lead frame 4 and the lead frame 5 side by side along the direction orthogonal to the extending direction, the inductance components generated in the lead frame 4 and the lead frame 5 are suppressed by canceling each other. The power loss that occurs in the semiconductor module 1 can be reduced.
  • the lead frame 4 and the lead frame 5 have similar plate-like shapes. It is desirable that the lead frame 4 and the lead frame 5 are arranged so that their stretching directions are parallel to each other. However, regarding the suppression of the above-mentioned inductance component, it is not necessary that all the above-mentioned conditions are satisfied. Even if a part of the lead frame 4 and the lead frame 5 is arranged substantially in parallel, it is suppressed by canceling the inductance component generated in the lead frame 4 and the lead frame 5, and the power loss generated in the semiconductor module 1 is reduced. can do.
  • the control lead frame 9 is pulled out in the same direction as the first voltage detection terminal 11.
  • the first voltage detection terminal 11 and the control lead frame 9 are drawn out from the same exterior surface (first exterior surface 13A).
  • first exterior surface 13A The same applies to the control lead frame 10 and the second voltage detection terminal 12, and the second voltage detection terminal 12 and the control lead frame 10 are drawn out from the same exterior surface (second exterior surface 13B).
  • the first exterior surface 13A and the second exterior surface 13B face each other.
  • the gate driver 18 connected to the control lead frame 9 and the gate driver 19 connected to the control lead frame 10 can be arranged at distant positions.
  • the degree of freedom regarding the arrangement of the gate driver 18 and the gate driver 19 is increased, and the degree of freedom regarding the design of the semiconductor module 1 is also increased.
  • the distance between the switch element 2 and the gate driver 18 and the distance between the switch element 3 and the gate driver 19 can be shortened. As a result, the signal transmission distance is shortened, so that noise is suppressed and the operational reliability of the semiconductor module 1 is improved.
  • the board on which the gate driver 18, the gate driver 19 and the control circuit 17 are mounted (not shown) and the board on which the semiconductor module 1 is mounted (not shown) are different boards and are parallel to each other. It is preferable that the components are provided in a laminated state in which they are arranged in a proper positional relationship.
  • control lead frame 9 and the first voltage detection terminal 11 are drawn out from the first exterior surface 13A, and a substrate on which the gate driver 18, the gate driver 19, and the control circuit 17 are mounted (not shown). It should be bent toward. In other words, the control lead frame 9 and the first voltage detection terminal 11 are drawn out from the first exterior surface 13A so as to be substantially parallel to the substrate (not shown) on which the semiconductor module 1 is mounted.
  • control lead frame 10 and the second voltage detection terminal 12 are drawn out from the second exterior surface 13B, and a substrate on which the gate driver 18, the gate driver 19, and the control circuit 17 are mounted (not shown). It should be bent toward. In other words, the control lead frame 10 and the second voltage detection terminal 12 are drawn out from the second exterior surface 13B so as to be substantially parallel to the substrate (not shown) on which the semiconductor module 1 is mounted.
  • control lead frame 9 and the control lead frame 10 are arranged at a distance from each other on the outside of the exterior resin portion 13.
  • the first voltage detection terminal 11 and the second voltage detection terminal 12 are arranged at a distance from each other.
  • the positive electrode lead frame 6, the output lead frame 7, and the negative electrode lead frame 8 preferably have a shape having a larger cross-sectional area in the energization direction than the lead frame 4 and the lead frame 5.
  • the cross-sectional area of the control lead frame 9 and the control lead frame 10 in the energizing direction is preferably smaller than the cross-sectional area of the positive electrode lead frame 6, the output lead frame 7, and the negative electrode lead frame 8 in the energizing direction.
  • the positive electrode lead frame 6, the output lead frame 7, and the negative electrode lead frame 8 have a wider configuration than the lead frame 4 and the lead frame 5.
  • the thickness of the positive electrode lead frame 6 may be larger than the thickness of the lead frame 4.
  • each of the thickness of the output lead frame 7 and the thickness of the negative electrode lead frame 8 may be larger than the thickness of the lead frame 5.
  • the thickness of the control lead frame 9 and the thickness of the control lead frame 10 may be smaller than the thickness of the positive electrode lead frame 6, the thickness of the output lead frame 7, and the thickness of the negative electrode lead frame 8.
  • the thickness of the lead frame 4 (shown as T1 in FIG. 6), the thickness of the lead frame 5, and the thickness of the control lead frame 9 are the same as the thickness of the control lead frame 10, and the thickness of the positive electrode lead frame 6 (FIG. 6). It is preferable that the thickness of the output lead frame 7 and the thickness of the negative electrode lead frame 8 (shown as T2 in 6) be larger than the thickness T1 (thickness T2).
  • the mechanical fixing strength with the DC power supply device 15 and the load device 16 required for the positive electrode lead frame 6, the output lead frame 7, and the negative electrode lead frame 8 becomes strong.
  • the thickness T1 which is the thickness of the lead frame 4 and the thickness T1 which is the thickness of the lead frame 5 has a current capacity that suppresses the loss in the semiconductor module 1 and does not cause excessive heat generation or the like. ..
  • the lead frame 4 has a connecting convex portion 4A.
  • the source electrode 2S is connected to a connecting convex portion 4A provided on the lead frame 4.
  • the lead frame 5 has a connecting convex portion, and the source electrode 3S is connected to a connecting convex portion (not shown) provided on the lead frame 5.
  • connection convex portion 4A By providing the connection convex portion 4A or the like on the lead frame 4, it becomes easy to accurately determine the position of the joint portion with respect to the switch element 2.
  • the connection convex portion 4A can be positioned with respect to the switch element 2 so that a space is interposed or a creepage distance is separated in a portion where insulation is required.
  • the exterior resin portion 13 may be filled in the region where the above space is interposed. Further, the connecting convex portion 4A is in contact with the source electrode 2S in a narrow region. Therefore, the reliability of the semiconductor module 1 is improved by stabilizing the bonded state of the connecting convex portion 4A to the source electrode 2S by using a bonding material or a welding material.
  • the switch element 2 and the switch element 3 have been described using one element, but as shown in FIGS. 2 and 3, the switch element 2 and the switch are used to increase the current capacity.
  • Each of the elements 3 may be controlled so that a plurality of elements are arranged in parallel and operate in synchronization with each other.
  • the semiconductor module 1 of one aspect of the present disclosure includes a switch element 2 having a source electrode 2S, a gate electrode 2G, and a drain electrode 2D, a switch element 3 having a source electrode 3S, a gate electrode 3G, and a drain electrode 3D, and a plate.
  • the shape is bonded to the source electrode 2S of the switch element 2, and the lead frame 4 (conductor) on which the switch element 3 is mounted is bonded to the plate-shaped source electrode 3S of the switch element 3, and the switch element 3 is bonded to the source electrode 3S of the switch element 3.
  • the mounted lead frame 5 (conductor), the positive electrode lead frame 6 (positive electrode conductor) connected to the drain electrode 2D of the switch element 2, and the lead frame 4 and the drain electrode 3D of the switch element 3 are connected to each other.
  • Output lead frame 7 (output conductor), negative electrode lead frame 8 (negative electrode conductor) connected to the lead frame 5, and control lead frame 9 (control conductor) connected to the gate electrode 2G of the switch element 2.
  • the control lead frame 10 (control conductor) connected to the gate electrode 3G of the switch element 3, the first voltage detection terminal 11 provided on the lead frame 4, and the second voltage detection provided on the lead frame 5.
  • Terminal 12 switch element 2, switch element 3, lead frame 4, lead frame 5, part of positive electrode lead frame 6, part of output lead frame 7, part of negative electrode lead frame 8, one of control lead frame 9.
  • the exterior resin portion 13 includes a polyhedral exterior resin portion 13 that seals a portion, a part of the control lead frame 10, a part of the first voltage detection terminal 11, and a part of the second voltage detection terminal 12.
  • the first exterior surface 13A and the second exterior surface 13B are provided, the first voltage detection terminal 11 projects from the first exterior surface 13A, and the second voltage detection terminal 12 projects from the second exterior surface 13B.
  • the first voltage detection terminal 11 and the lead frame 4 are formed of a single conductor
  • the second voltage detection terminal 12 and the lead frame 5 are formed of a single conductor. Has been done.
  • the first exterior surface 13A and the second exterior surface 13B face each other.
  • the first exterior surface 13A includes two planes
  • the second exterior surface 13B includes two planes
  • the direction in which the first voltage detection terminal 11 protrudes from the first exterior surface 13A is opposite to the direction in which the second voltage detection terminal 12 protrudes from the second exterior surface 13B.
  • the semiconductor module 1 of the other aspect is provided with the lead frame 4 and the lead frame 5 side by side.
  • the first voltage detection terminal 11 and the control lead frame 9 project from the first exterior surface 13A
  • the second voltage detection terminal 12 and the control lead frame 10 project from the second exterior surface 13B. Protrude.
  • the thickness of the control lead frame 9, the thickness of the control lead frame 10, the thickness of the lead frame 4, and the thickness of the lead frame 5 are each a thickness T1.
  • the thickness of the positive electrode lead frame 6, the thickness of the output lead frame 7, and the thickness of the negative electrode lead frame 8 are each the thickness T2, and the value of T2 is larger than the value of T1.
  • the lead frame 4 has the connecting convex portion 4A
  • the source electrode 2S of the switch element 2 has the lead frame 4 connected to the connecting convex portion 4A
  • the lead frame 5 also has the lead frame 4 Similarly, it has a connecting convex portion
  • the source electrode 3S of the switch element 3 is connected to the connecting convex portion of the lead frame 5.
  • the semiconductor module of the present disclosure has an effect of improving reliability and is useful in various electronic devices.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)
PCT/JP2021/011065 2020-04-01 2021-03-18 半導体モジュール Ceased WO2021200211A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US17/906,619 US20230163055A1 (en) 2020-04-01 2021-03-18 Semiconductor module
EP21780660.3A EP4131370A4 (en) 2020-04-01 2021-03-18 SEMICONDUCTOR MODULE
CN202180023469.5A CN115380377A (zh) 2020-04-01 2021-03-18 半导体模块
JP2022511880A JPWO2021200211A1 (https=) 2020-04-01 2021-03-18

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-065452 2020-04-01
JP2020065452 2020-04-01

Publications (1)

Publication Number Publication Date
WO2021200211A1 true WO2021200211A1 (ja) 2021-10-07

Family

ID=77928393

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2021/011065 Ceased WO2021200211A1 (ja) 2020-04-01 2021-03-18 半導体モジュール

Country Status (5)

Country Link
US (1) US20230163055A1 (https=)
EP (1) EP4131370A4 (https=)
JP (1) JPWO2021200211A1 (https=)
CN (1) CN115380377A (https=)
WO (1) WO2021200211A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025197045A1 (ja) * 2024-03-21 2025-09-25 Ａｓｔｅｍｏ株式会社 半導体装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011250490A (ja) * 2010-05-21 2011-12-08 Denso Corp 半導体モジュール、および、それを用いた駆動装置
JP2013004943A (ja) * 2011-06-22 2013-01-07 Renesas Electronics Corp 半導体装置及びその製造方法
JP2015115464A (ja) 2013-12-11 2015-06-22 トヨタ自動車株式会社 半導体装置
JP2019068110A (ja) * 2019-02-04 2019-04-25 ローム株式会社 パワーモジュール

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4220731B2 (ja) * 2002-06-19 2009-02-04 三菱電機株式会社 電力用半導体装置
JP5443837B2 (ja) * 2009-06-05 2014-03-19 ルネサスエレクトロニクス株式会社 半導体装置
JP5481148B2 (ja) * 2009-10-02 2014-04-23 日立オートモティブシステムズ株式会社 半導体装置、およびパワー半導体モジュール、およびパワー半導体モジュールを備えた電力変換装置
JP5422663B2 (ja) * 2009-10-22 2014-02-19 パナソニック株式会社 パワー半導体モジュール
JP6094420B2 (ja) * 2013-08-09 2017-03-15 三菱電機株式会社 半導体装置
US10263612B2 (en) * 2013-11-20 2019-04-16 Rohm Co., Ltd. Switching device and electronic circuit
JP6475918B2 (ja) * 2014-02-05 2019-02-27 ローム株式会社 パワーモジュール
JP6261642B2 (ja) * 2016-04-04 2018-01-17 三菱電機株式会社 電力半導体装置
EP3584592A4 (en) * 2017-02-20 2020-11-18 Shindengen Electric Manufacturing Co., Ltd. ELECTRONIC DEVICE AND CONNECTOR

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011250490A (ja) * 2010-05-21 2011-12-08 Denso Corp 半導体モジュール、および、それを用いた駆動装置
JP2013004943A (ja) * 2011-06-22 2013-01-07 Renesas Electronics Corp 半導体装置及びその製造方法
JP2015115464A (ja) 2013-12-11 2015-06-22 トヨタ自動車株式会社 半導体装置
JP2019068110A (ja) * 2019-02-04 2019-04-25 ローム株式会社 パワーモジュール

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP4131370A4

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025197045A1 (ja) * 2024-03-21 2025-09-25 Ａｓｔｅｍｏ株式会社 半導体装置

Also Published As

Publication number Publication date
JPWO2021200211A1 (https=) 2021-10-07
CN115380377A (zh) 2022-11-22
EP4131370A4 (en) 2023-10-11
EP4131370A1 (en) 2023-02-08
US20230163055A1 (en) 2023-05-25

Similar Documents

Publication Publication Date Title
US9390996B2 (en) Double-sided cooling power module and method for manufacturing the same
US10153708B2 (en) Three-level power converter
US11101241B2 (en) Semiconductor device having terminals and semiconductor elements electrically connected to a respective side surface of the terminals
JP6331294B2 (ja) 半導体装置
JP6891904B2 (ja) 半導体モジュール、電気自動車およびパワーコントロールユニット
US20160105004A1 (en) Power Module, Power Converter and Drive Arrangement With A Power Module
CN110622307B (zh) 半导体模块以及电力变换装置
JP2021141222A (ja) 半導体モジュール
CN113557603B (zh) 半导体装置
JP3673776B2 (ja) 半導体モジュール及び電力変換装置
CN113661567B (zh) 半导体装置
JP2013157346A (ja) 半導体装置
US20230253372A1 (en) Semiconductor device and power conversion device using same
WO2021200211A1 (ja) 半導体モジュール
JP6220265B2 (ja) 半導体実装構造およびその実装方法
US20240251532A1 (en) Power conversion device
CN113508461B (zh) 半导体装置
KR20230095546A (ko) 전력반도체모듈 및 그 제조방법
JP2023168849A (ja) 半導体装置、及び、半導体装置の製造方法
JP7147186B2 (ja) 半導体装置
JP2021093490A (ja) パワーモジュール、パワー半導体装置および電力変換装置
JP2023081134A (ja) 半導体モジュール、半導体装置、及び車両
US20240355713A1 (en) Semiconductor device
US20240128166A1 (en) Semiconductor device and power conversion device
JP6898588B2 (ja) 半導体装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 21780660

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2022511880

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 2021780660

Country of ref document: EP

Effective date: 20221102