WO2021193818A1 - Cristal de dérivé de phénanthroline, son procédé de production et élément électroluminescent l'utilisant - Google Patents
Cristal de dérivé de phénanthroline, son procédé de production et élément électroluminescent l'utilisant Download PDFInfo
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- WO2021193818A1 WO2021193818A1 PCT/JP2021/012518 JP2021012518W WO2021193818A1 WO 2021193818 A1 WO2021193818 A1 WO 2021193818A1 JP 2021012518 W JP2021012518 W JP 2021012518W WO 2021193818 A1 WO2021193818 A1 WO 2021193818A1
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- 239000013078 crystal Substances 0.000 title claims abstract description 226
- NSMJMUQZRGZMQC-UHFFFAOYSA-N 2-naphthalen-1-yl-1H-imidazo[4,5-f][1,10]phenanthroline Chemical compound C12=CC=CN=C2C2=NC=CC=C2C2=C1NC(C=1C3=CC=CC=C3C=CC=1)=N2 NSMJMUQZRGZMQC-UHFFFAOYSA-N 0.000 title claims abstract description 126
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
- 239000000463 material Substances 0.000 claims abstract description 108
- 239000000126 substance Substances 0.000 claims abstract description 40
- 238000000634 powder X-ray diffraction Methods 0.000 claims abstract description 39
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 claims abstract description 7
- 125000004957 naphthylene group Chemical group 0.000 claims abstract description 6
- 125000000217 alkyl group Chemical group 0.000 claims description 65
- 125000003118 aryl group Chemical group 0.000 claims description 64
- 125000001072 heteroaryl group Chemical group 0.000 claims description 56
- 238000002347 injection Methods 0.000 claims description 44
- 239000007924 injection Substances 0.000 claims description 44
- 125000001424 substituent group Chemical group 0.000 claims description 44
- 239000002904 solvent Substances 0.000 claims description 34
- 125000003545 alkoxy group Chemical group 0.000 claims description 33
- 125000004093 cyano group Chemical group *C#N 0.000 claims description 29
- 238000005259 measurement Methods 0.000 claims description 28
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 27
- 229910052796 boron Inorganic materials 0.000 claims description 27
- 239000002798 polar solvent Substances 0.000 claims description 26
- 239000003849 aromatic solvent Substances 0.000 claims description 24
- 125000004104 aryloxy group Chemical group 0.000 claims description 24
- OVTCUIZCVUGJHS-VQHVLOKHSA-N trans-dipyrrin Chemical compound C=1C=CNC=1/C=C1\C=CC=N1 OVTCUIZCVUGJHS-VQHVLOKHSA-N 0.000 claims description 24
- 239000012046 mixed solvent Substances 0.000 claims description 23
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 22
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 22
- 229910052799 carbon Inorganic materials 0.000 claims description 21
- 230000003111 delayed effect Effects 0.000 claims description 21
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 20
- 125000004429 atom Chemical group 0.000 claims description 20
- 125000004414 alkyl thio group Chemical group 0.000 claims description 18
- 125000003277 amino group Chemical group 0.000 claims description 18
- 125000005843 halogen group Chemical group 0.000 claims description 18
- 125000003342 alkenyl group Chemical group 0.000 claims description 16
- 125000005110 aryl thio group Chemical group 0.000 claims description 16
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 claims description 16
- GYUPAYHPAZQUMB-UHFFFAOYSA-N 2-phenyl-9-[3-(9-phenyl-1,10-phenanthrolin-2-yl)phenyl]-1,10-phenanthroline Chemical group C1=CC=CC=C1C1=CC=C(C=CC=2C3=NC(=CC=2)C=2C=C(C=CC=2)C=2N=C4C5=NC(=CC=C5C=CC4=CC=2)C=2C=CC=CC=2)C3=N1 GYUPAYHPAZQUMB-UHFFFAOYSA-N 0.000 claims description 15
- 125000004453 alkoxycarbonyl group Chemical group 0.000 claims description 15
- 125000003917 carbamoyl group Chemical group [H]N([H])C(*)=O 0.000 claims description 14
- 238000001035 drying Methods 0.000 claims description 14
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 13
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims description 13
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 12
- 150000001721 carbon Chemical group 0.000 claims description 12
- 229910052744 lithium Inorganic materials 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- 125000002252 acyl group Chemical group 0.000 claims description 10
- 229910052783 alkali metal Inorganic materials 0.000 claims description 10
- 125000000304 alkynyl group Chemical group 0.000 claims description 10
- 125000000623 heterocyclic group Chemical group 0.000 claims description 10
- 150000001340 alkali metals Chemical class 0.000 claims description 9
- 125000004390 alkyl sulfonyl group Chemical group 0.000 claims description 9
- 125000004397 aminosulfonyl group Chemical group NS(=O)(=O)* 0.000 claims description 9
- 125000004391 aryl sulfonyl group Chemical group 0.000 claims description 9
- 125000000392 cycloalkenyl group Chemical group 0.000 claims description 9
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 9
- 125000002485 formyl group Chemical group [H]C(*)=O 0.000 claims description 8
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 8
- 125000002950 monocyclic group Chemical group 0.000 claims description 8
- 125000005138 alkoxysulfonyl group Chemical group 0.000 claims description 7
- 125000003710 aryl alkyl group Chemical group 0.000 claims description 7
- 125000000707 boryl group Chemical group B* 0.000 claims description 7
- 238000007416 differential thermogravimetric analysis Methods 0.000 claims description 7
- 125000005401 siloxanyl group Chemical group 0.000 claims description 7
- 125000003396 thiol group Chemical group [H]S* 0.000 claims description 7
- MPQXHAGKBWFSNV-UHFFFAOYSA-N oxidophosphanium Chemical group [PH3]=O MPQXHAGKBWFSNV-UHFFFAOYSA-N 0.000 claims description 6
- 150000005041 phenanthrolines Chemical class 0.000 claims description 6
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 4
- 150000001339 alkali metal compounds Chemical class 0.000 claims 2
- 239000013557 residual solvent Substances 0.000 abstract description 28
- 239000010410 layer Substances 0.000 description 215
- 150000001875 compounds Chemical class 0.000 description 127
- 238000000034 method Methods 0.000 description 54
- -1 phenanthroline compound Chemical class 0.000 description 38
- 239000007787 solid Substances 0.000 description 36
- 238000010438 heat treatment Methods 0.000 description 32
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 30
- 230000000052 comparative effect Effects 0.000 description 26
- 239000000203 mixture Substances 0.000 description 26
- 239000002019 doping agent Substances 0.000 description 25
- 238000007740 vapor deposition Methods 0.000 description 24
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 22
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 21
- 125000004432 carbon atom Chemical group C* 0.000 description 21
- 238000011084 recovery Methods 0.000 description 20
- 239000000758 substrate Substances 0.000 description 20
- 230000015572 biosynthetic process Effects 0.000 description 19
- 238000000295 emission spectrum Methods 0.000 description 18
- 239000010408 film Substances 0.000 description 18
- 230000005525 hole transport Effects 0.000 description 18
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 18
- 238000003786 synthesis reaction Methods 0.000 description 18
- 238000006862 quantum yield reaction Methods 0.000 description 17
- 229910052731 fluorine Inorganic materials 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 238000000746 purification Methods 0.000 description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 14
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 14
- 239000002244 precipitate Substances 0.000 description 14
- 238000000859 sublimation Methods 0.000 description 13
- 230000008022 sublimation Effects 0.000 description 13
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 12
- 125000000524 functional group Chemical group 0.000 description 12
- 229910052709 silver Inorganic materials 0.000 description 12
- 239000004332 silver Substances 0.000 description 12
- 239000012300 argon atmosphere Substances 0.000 description 11
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 11
- 239000012044 organic layer Substances 0.000 description 10
- 239000000243 solution Substances 0.000 description 10
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 9
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 9
- 238000001816 cooling Methods 0.000 description 9
- 239000011777 magnesium Substances 0.000 description 9
- 229910052749 magnesium Inorganic materials 0.000 description 9
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 description 8
- 238000004455 differential thermal analysis Methods 0.000 description 8
- 230000005281 excited state Effects 0.000 description 8
- 125000001153 fluoro group Chemical group F* 0.000 description 8
- 230000005484 gravity Effects 0.000 description 8
- 238000006467 substitution reaction Methods 0.000 description 8
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 239000011737 fluorine Substances 0.000 description 7
- 150000002739 metals Chemical class 0.000 description 7
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 7
- 230000007704 transition Effects 0.000 description 7
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 238000005481 NMR spectroscopy Methods 0.000 description 6
- 125000001931 aliphatic group Chemical group 0.000 description 6
- 125000005013 aryl ether group Chemical group 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000000047 product Substances 0.000 description 6
- 229910021642 ultra pure water Inorganic materials 0.000 description 6
- 239000012498 ultrapure water Substances 0.000 description 6
- IYKBMPHOPLFHAQ-UHFFFAOYSA-N 2-phenyl-1,10-phenanthroline Chemical compound C1=CC=CC=C1C1=CC=C(C=CC=2C3=NC=CC=2)C3=N1 IYKBMPHOPLFHAQ-UHFFFAOYSA-N 0.000 description 5
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- JZXXUZWBECTQIC-UHFFFAOYSA-N [Li].C1=CC=CC2=NC(O)=CC=C21 Chemical compound [Li].C1=CC=CC2=NC(O)=CC=C21 JZXXUZWBECTQIC-UHFFFAOYSA-N 0.000 description 5
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 description 5
- 125000000609 carbazolyl group Chemical class C1(=CC=CC=2C3=CC=CC=C3NC12)* 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 239000007850 fluorescent dye Substances 0.000 description 5
- 229910052736 halogen Inorganic materials 0.000 description 5
- 150000002367 halogens Chemical class 0.000 description 5
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 5
- 229910052761 rare earth metal Inorganic materials 0.000 description 5
- 150000002910 rare earth metals Chemical class 0.000 description 5
- 239000011541 reaction mixture Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 4
- MZRVEZGGRBJDDB-UHFFFAOYSA-N N-Butyllithium Chemical compound [Li]CCCC MZRVEZGGRBJDDB-UHFFFAOYSA-N 0.000 description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 4
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 238000000862 absorption spectrum Methods 0.000 description 4
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 4
- 150000001408 amides Chemical class 0.000 description 4
- 239000004202 carbamide Substances 0.000 description 4
- 239000012141 concentrate Substances 0.000 description 4
- 230000009849 deactivation Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 125000003914 fluoranthenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC=C4C1=C23)* 0.000 description 4
- 150000002391 heterocyclic compounds Chemical class 0.000 description 4
- 238000004128 high performance liquid chromatography Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 4
- 125000001624 naphthyl group Chemical group 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 238000001953 recrystallisation Methods 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- 150000003462 sulfoxides Chemical class 0.000 description 4
- 150000003918 triazines Chemical class 0.000 description 4
- 239000008096 xylene Substances 0.000 description 4
- 125000001637 1-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C(*)=C([H])C([H])=C([H])C2=C1[H] 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- DGEZNRSVGBDHLK-UHFFFAOYSA-N [1,10]phenanthroline Chemical group C1=CN=C2C3=NC=CC=C3C=CC2=C1 DGEZNRSVGBDHLK-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 150000001342 alkaline earth metals Chemical class 0.000 description 3
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 3
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 3
- 125000004430 oxygen atom Chemical group O* 0.000 description 3
- NHKJPPKXDNZFBJ-UHFFFAOYSA-N phenyllithium Chemical compound [Li]C1=CC=CC=C1 NHKJPPKXDNZFBJ-UHFFFAOYSA-N 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 125000004076 pyridyl group Chemical group 0.000 description 3
- 125000000714 pyrimidinyl group Chemical group 0.000 description 3
- 125000001567 quinoxalinyl group Chemical class N1=C(C=NC2=CC=CC=C12)* 0.000 description 3
- 238000010992 reflux Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- 125000004434 sulfur atom Chemical group 0.000 description 3
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 3
- YJTKZCDBKVTVBY-UHFFFAOYSA-N 1,3-Diphenylbenzene Chemical group C1=CC=CC=C1C1=CC=CC(C=2C=CC=CC=2)=C1 YJTKZCDBKVTVBY-UHFFFAOYSA-N 0.000 description 2
- JSRLURSZEMLAFO-UHFFFAOYSA-N 1,3-dibromobenzene Chemical compound BrC1=CC=CC(Br)=C1 JSRLURSZEMLAFO-UHFFFAOYSA-N 0.000 description 2
- JFJNVIPVOCESGZ-UHFFFAOYSA-N 2,3-dipyridin-2-ylpyridine Chemical class N1=CC=CC=C1C1=CC=CN=C1C1=CC=CC=N1 JFJNVIPVOCESGZ-UHFFFAOYSA-N 0.000 description 2
- BSKHPKMHTQYZBB-UHFFFAOYSA-N 2-methylpyridine Chemical compound CC1=CC=CC=N1 BSKHPKMHTQYZBB-UHFFFAOYSA-N 0.000 description 2
- ROFVEXUMMXZLPA-UHFFFAOYSA-N Bipyridyl Chemical compound N1=CC=CC=C1C1=CC=CC=N1 ROFVEXUMMXZLPA-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- KYQCOXFCLRTKLS-UHFFFAOYSA-N Pyrazine Chemical group C1=CN=CC=N1 KYQCOXFCLRTKLS-UHFFFAOYSA-N 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 2
- 125000002723 alicyclic group Chemical group 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 125000005605 benzo group Chemical group 0.000 description 2
- 125000006267 biphenyl group Chemical group 0.000 description 2
- 125000000319 biphenyl-4-yl group Chemical group [H]C1=C([H])C([H])=C([H])C([H])=C1C1=C([H])C([H])=C([*])C([H])=C1[H] 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- RWGFKTVRMDUZSP-UHFFFAOYSA-N cumene Chemical compound CC(C)C1=CC=CC=C1 RWGFKTVRMDUZSP-UHFFFAOYSA-N 0.000 description 2
- 150000004292 cyclic ethers Chemical class 0.000 description 2
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 229910052805 deuterium Inorganic materials 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000000706 filtrate Substances 0.000 description 2
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 2
- 125000002541 furyl group Chemical group 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 150000004866 oxadiazoles Chemical class 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 125000005561 phenanthryl group Chemical group 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 125000001725 pyrenyl group Chemical group 0.000 description 2
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 2
- 125000000168 pyrrolyl group Chemical group 0.000 description 2
- 125000002294 quinazolinyl group Chemical class N1=C(N=CC2=CC=CC=C12)* 0.000 description 2
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- HPALAKNZSZLMCH-UHFFFAOYSA-M sodium;chloride;hydrate Chemical class O.[Na+].[Cl-] HPALAKNZSZLMCH-UHFFFAOYSA-M 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 125000000472 sulfonyl group Chemical group *S(*)(=O)=O 0.000 description 2
- 229940042055 systemic antimycotics triazole derivative Drugs 0.000 description 2
- 150000007979 thiazole derivatives Chemical class 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 2
- 125000003960 triphenylenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3C3=CC=CC=C3C12)* 0.000 description 2
- MDYOLVRUBBJPFM-UHFFFAOYSA-N tropolone Chemical compound OC1=CC=CC=CC1=O MDYOLVRUBBJPFM-UHFFFAOYSA-N 0.000 description 2
- 238000001291 vacuum drying Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 0 *(c(ccc1ccc2cc3)nc1c2nc3-c1ccccc1)c1ccc(ccc(cc2)c3nc2-c2ccccc2)c3n1 Chemical compound *(c(ccc1ccc2cc3)nc1c2nc3-c1ccccc1)c1ccc(ccc(cc2)c3nc2-c2ccccc2)c3n1 0.000 description 1
- ICPSWZFVWAPUKF-UHFFFAOYSA-N 1,1'-spirobi[fluorene] Chemical compound C1=CC=C2C=C3C4(C=5C(C6=CC=CC=C6C=5)=CC=C4)C=CC=C3C2=C1 ICPSWZFVWAPUKF-UHFFFAOYSA-N 0.000 description 1
- PXLYGWXKAVCTPX-UHFFFAOYSA-N 1,2,3,4,5,6-hexamethylidenecyclohexane Chemical class C=C1C(=C)C(=C)C(=C)C(=C)C1=C PXLYGWXKAVCTPX-UHFFFAOYSA-N 0.000 description 1
- WQONPSCCEXUXTQ-UHFFFAOYSA-N 1,2-dibromobenzene Chemical class BrC1=CC=CC=C1Br WQONPSCCEXUXTQ-UHFFFAOYSA-N 0.000 description 1
- ZIZMDHZLHJBNSQ-UHFFFAOYSA-N 1,2-dihydrophenazine Chemical class C1=CC=C2N=C(C=CCC3)C3=NC2=C1 ZIZMDHZLHJBNSQ-UHFFFAOYSA-N 0.000 description 1
- BCMCBBGGLRIHSE-UHFFFAOYSA-N 1,3-benzoxazole Chemical class C1=CC=C2OC=NC2=C1 BCMCBBGGLRIHSE-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- VCHOFVSNWYPAEF-UHFFFAOYSA-N 1-(3-acetylphenyl)ethanone Chemical compound CC(=O)C1=CC=CC(C(C)=O)=C1 VCHOFVSNWYPAEF-UHFFFAOYSA-N 0.000 description 1
- BMVXCPBXGZKUPN-UHFFFAOYSA-N 1-hexanamine Chemical group CCCCCCN BMVXCPBXGZKUPN-UHFFFAOYSA-N 0.000 description 1
- 238000005160 1H NMR spectroscopy Methods 0.000 description 1
- UIWLITBBFICQKW-UHFFFAOYSA-N 1h-benzo[h]quinolin-2-one Chemical class C1=CC=C2C3=NC(O)=CC=C3C=CC2=C1 UIWLITBBFICQKW-UHFFFAOYSA-N 0.000 description 1
- WLODWTPNUWYZKN-UHFFFAOYSA-N 1h-pyrrol-2-ol Chemical class OC1=CC=CN1 WLODWTPNUWYZKN-UHFFFAOYSA-N 0.000 description 1
- FQJQNLKWTRGIEB-UHFFFAOYSA-N 2-(4-tert-butylphenyl)-5-[3-[5-(4-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]phenyl]-1,3,4-oxadiazole Chemical group C1=CC(C(C)(C)C)=CC=C1C1=NN=C(C=2C=C(C=CC=2)C=2OC(=NN=2)C=2C=CC(=CC=2)C(C)(C)C)O1 FQJQNLKWTRGIEB-UHFFFAOYSA-N 0.000 description 1
- QWKWMRMSNXMFOE-UHFFFAOYSA-N 2-[2,3-bis(1-phenylbenzimidazol-2-yl)phenyl]-1-phenylbenzimidazole Chemical compound C1=CC=CC=C1N1C2=CC=CC=C2N=C1C1=CC=CC(C=2N(C3=CC=CC=C3N=2)C=2C=CC=CC=2)=C1C1=NC2=CC=CC=C2N1C1=CC=CC=C1 QWKWMRMSNXMFOE-UHFFFAOYSA-N 0.000 description 1
- KXMKGOPUYUWQHC-UHFFFAOYSA-N 2-[3-(1,10-phenanthrolin-2-yl)phenyl]-1,10-phenanthroline Chemical compound C1=CN=C2C3=NC(C=4C=CC=C(C=4)C=4N=C5C6=NC=CC=C6C=CC5=CC=4)=CC=C3C=CC2=C1 KXMKGOPUYUWQHC-UHFFFAOYSA-N 0.000 description 1
- IXHWGNYCZPISET-UHFFFAOYSA-N 2-[4-(dicyanomethylidene)-2,3,5,6-tetrafluorocyclohexa-2,5-dien-1-ylidene]propanedinitrile Chemical compound FC1=C(F)C(=C(C#N)C#N)C(F)=C(F)C1=C(C#N)C#N IXHWGNYCZPISET-UHFFFAOYSA-N 0.000 description 1
- DRBQBEIILOMOCR-UHFFFAOYSA-N 2-aminoquinoline-7-carbaldehyde Chemical compound NC1=NC2=CC(=CC=C2C=C1)C=O DRBQBEIILOMOCR-UHFFFAOYSA-N 0.000 description 1
- JWUJQDFVADABEY-UHFFFAOYSA-N 2-methyltetrahydrofuran Chemical compound CC1CCCO1 JWUJQDFVADABEY-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- 125000004172 4-methoxyphenyl group Chemical group [H]C1=C([H])C(OC([H])([H])[H])=C([H])C([H])=C1* 0.000 description 1
- AOQKGYRILLEVJV-UHFFFAOYSA-N 4-naphthalen-1-yl-3,5-diphenyl-1,2,4-triazole Chemical compound C1=CC=CC=C1C(N1C=2C3=CC=CC=C3C=CC=2)=NN=C1C1=CC=CC=C1 AOQKGYRILLEVJV-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical group NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 1
- ZAFNJMIOTHYJRJ-UHFFFAOYSA-N Diisopropyl ether Chemical compound CC(C)OC(C)C ZAFNJMIOTHYJRJ-UHFFFAOYSA-N 0.000 description 1
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 1
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical group CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- BZLVMXJERCGZMT-UHFFFAOYSA-N Methyl tert-butyl ether Chemical compound COC(C)(C)C BZLVMXJERCGZMT-UHFFFAOYSA-N 0.000 description 1
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical group NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 1
- PCNDJXKNXGMECE-UHFFFAOYSA-N Phenazine Chemical group C1=CC=CC2=NC3=CC=CC=C3N=C21 PCNDJXKNXGMECE-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- CKUAXEQHGKSLHN-UHFFFAOYSA-N [C].[N] Chemical compound [C].[N] CKUAXEQHGKSLHN-UHFFFAOYSA-N 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 125000002777 acetyl group Chemical group [H]C([H])([H])C(*)=O 0.000 description 1
- 125000000641 acridinyl group Chemical group C1(=CC=CC2=NC3=CC=CC=C3C=C12)* 0.000 description 1
- 125000005073 adamantyl group Chemical group C12(CC3CC(CC(C1)C3)C2)* 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 229910001508 alkali metal halide Inorganic materials 0.000 description 1
- 150000008045 alkali metal halides Chemical class 0.000 description 1
- 229910001615 alkaline earth metal halide Inorganic materials 0.000 description 1
- 125000005103 alkyl silyl group Chemical group 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 125000003368 amide group Chemical group 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 125000005577 anthracene group Chemical group 0.000 description 1
- 125000002178 anthracenyl group Chemical group C1(=CC=CC2=CC3=CC=CC=C3C=C12)* 0.000 description 1
- 229940058303 antinematodal benzimidazole derivative Drugs 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 125000005104 aryl silyl group Chemical group 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 150000001556 benzimidazoles Chemical class 0.000 description 1
- WZJYKHNJTSNBHV-UHFFFAOYSA-N benzo[h]quinoline Chemical class C1=CN=C2C3=CC=CC=C3C=CC2=C1 WZJYKHNJTSNBHV-UHFFFAOYSA-N 0.000 description 1
- 125000000499 benzofuranyl group Chemical group O1C(=CC2=C1C=CC=C2)* 0.000 description 1
- 150000008359 benzonitriles Chemical class 0.000 description 1
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical class C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 1
- 125000001164 benzothiazolyl group Chemical group S1C(=NC2=C1C=CC=C2)* 0.000 description 1
- 125000004196 benzothienyl group Chemical group S1C(=CC2=C1C=CC=C2)* 0.000 description 1
- 125000004541 benzoxazolyl group Chemical group O1C(=NC2=C1C=CC=C2)* 0.000 description 1
- 125000003236 benzoyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C(*)=O 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- ZADPBFCGQRWHPN-UHFFFAOYSA-N boronic acid Chemical class OBO ZADPBFCGQRWHPN-UHFFFAOYSA-N 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- DNSISZSEWVHGLH-UHFFFAOYSA-N butanamide Chemical group CCCC(N)=O DNSISZSEWVHGLH-UHFFFAOYSA-N 0.000 description 1
- 125000004744 butyloxycarbonyl group Chemical group 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 125000004623 carbolinyl group Chemical group 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 125000002676 chrysenyl group Chemical group C1(=CC=CC=2C3=CC=C4C=CC=CC4=C3C=CC12)* 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004440 column chromatography Methods 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 230000021615 conjugation Effects 0.000 description 1
- 150000003950 cyclic amides Chemical class 0.000 description 1
- 125000000596 cyclohexenyl group Chemical group C1(=CCCCC1)* 0.000 description 1
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 description 1
- 125000002433 cyclopentenyl group Chemical group C1(=CCCC1)* 0.000 description 1
- 125000001559 cyclopropyl group Chemical group [H]C1([H])C([H])([H])C1([H])* 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 125000004431 deuterium atom Chemical group 0.000 description 1
- 125000005331 diazinyl group Chemical group N1=NC(=CC=C1)* 0.000 description 1
- 125000005299 dibenzofluorenyl group Chemical group C1(=CC=CC2=C3C(=C4C=5C=CC=CC5CC4=C21)C=CC=C3)* 0.000 description 1
- 125000005509 dibenzothiophenyl group Chemical group 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 125000003754 ethoxycarbonyl group Chemical group C(=O)(OCC)* 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 150000007946 flavonol Chemical class 0.000 description 1
- HVQAJTFOCKOKIN-UHFFFAOYSA-N flavonol Natural products O1C2=CC=CC=C2C(=O)C(O)=C1C1=CC=CC=C1 HVQAJTFOCKOKIN-UHFFFAOYSA-N 0.000 description 1
- 235000011957 flavonols Nutrition 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 125000005935 hexyloxycarbonyl group Chemical group 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- VVVPGLRKXQSQSZ-UHFFFAOYSA-N indolo[3,2-c]carbazole Chemical class C1=CC=CC2=NC3=C4C5=CC=CC=C5N=C4C=CC3=C21 VVVPGLRKXQSQSZ-UHFFFAOYSA-N 0.000 description 1
- 125000001041 indolyl group Chemical group 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229940079865 intestinal antiinfectives imidazole derivative Drugs 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 125000003010 ionic group Chemical group 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- JJWLVOIRVHMVIS-UHFFFAOYSA-N isopropylamine Chemical group CC(C)N JJWLVOIRVHMVIS-UHFFFAOYSA-N 0.000 description 1
- 125000002183 isoquinolinyl group Chemical group C1(=NC=CC2=CC=CC=C12)* 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- UBJFKNSINUCEAL-UHFFFAOYSA-N lithium;2-methylpropane Chemical compound [Li+].C[C-](C)C UBJFKNSINUCEAL-UHFFFAOYSA-N 0.000 description 1
- WGOPGODQLGJZGL-UHFFFAOYSA-N lithium;butane Chemical compound [Li+].CC[CH-]C WGOPGODQLGJZGL-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 1
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 125000001160 methoxycarbonyl group Chemical group [H]C([H])([H])OC(*)=O 0.000 description 1
- SKTCDJAMAYNROS-UHFFFAOYSA-N methoxycyclopentane Chemical compound COC1CCCC1 SKTCDJAMAYNROS-UHFFFAOYSA-N 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- VGGNVBNNVSIGKG-UHFFFAOYSA-N n,n,2-trimethylaziridine-1-carboxamide Chemical compound CC1CN1C(=O)N(C)C VGGNVBNNVSIGKG-UHFFFAOYSA-N 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 125000002868 norbornyl group Chemical group C12(CCC(CC1)C2)* 0.000 description 1
- 238000000655 nuclear magnetic resonance spectrum Methods 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 125000001181 organosilyl group Chemical group [SiH3]* 0.000 description 1
- 150000007978 oxazole derivatives Chemical class 0.000 description 1
- WKGDNXBDNLZSKC-UHFFFAOYSA-N oxido(phenyl)phosphanium Chemical compound O=[PH2]c1ccccc1 WKGDNXBDNLZSKC-UHFFFAOYSA-N 0.000 description 1
- 125000004043 oxo group Chemical group O=* 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 125000005062 perfluorophenyl group Chemical group FC1=C(C(=C(C(=C1F)F)F)F)* 0.000 description 1
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 1
- 125000006678 phenoxycarbonyl group Chemical group 0.000 description 1
- 125000000286 phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- LFGREXWGYUGZLY-UHFFFAOYSA-N phosphoryl Chemical class [P]=O LFGREXWGYUGZLY-UHFFFAOYSA-N 0.000 description 1
- 125000002265 phtalazinyl group Chemical group 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 125000003386 piperidinyl group Chemical group 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 239000005518 polymer electrolyte Substances 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- FVSKHRXBFJPNKK-UHFFFAOYSA-N propionitrile Chemical compound CCC#N FVSKHRXBFJPNKK-UHFFFAOYSA-N 0.000 description 1
- 125000001501 propionyl group Chemical group O=C([*])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000002572 propoxy group Chemical group [*]OC([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical group CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 1
- 125000004742 propyloxycarbonyl group Chemical group 0.000 description 1
- 125000004309 pyranyl group Chemical group O1C(C=CC=C1)* 0.000 description 1
- 150000003216 pyrazines Chemical class 0.000 description 1
- 125000003373 pyrazinyl group Chemical group 0.000 description 1
- 125000005581 pyrene group Chemical group 0.000 description 1
- 125000002098 pyridazinyl group Chemical group 0.000 description 1
- 150000003222 pyridines Chemical class 0.000 description 1
- 150000003230 pyrimidines Chemical class 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 150000003248 quinolines Chemical class 0.000 description 1
- 150000004322 quinolinols Chemical class 0.000 description 1
- 150000004059 quinone derivatives Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000003377 silicon compounds Chemical group 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000012453 solvate Substances 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- 229940124530 sulfonamide Drugs 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 125000001981 tert-butyldimethylsilyl group Chemical group [H]C([H])([H])[Si]([H])(C([H])([H])[H])[*]C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 125000000037 tert-butyldiphenylsilyl group Chemical group [H]C1=C([H])C([H])=C([H])C([H])=C1[Si]([H])([*]C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H])C1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 description 1
- PCCVSPMFGIFTHU-UHFFFAOYSA-N tetracyanoquinodimethane Chemical class N#CC(C#N)=C1C=CC(=C(C#N)C#N)C=C1 PCCVSPMFGIFTHU-UHFFFAOYSA-N 0.000 description 1
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 125000001544 thienyl group Chemical group 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 125000004306 triazinyl group Chemical group 0.000 description 1
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 238000000870 ultraviolet spectroscopy Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D471/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00
- C07D471/02—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00 in which the condensed system contains two hetero rings
- C07D471/04—Ortho-condensed systems
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D519/00—Heterocyclic compounds containing more than one system of two or more relevant hetero rings condensed among themselves or condensed with a common carbocyclic ring system not provided for in groups C07D453/00 or C07D455/00
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07B—GENERAL METHODS OF ORGANIC CHEMISTRY; APPARATUS THEREFOR
- C07B2200/00—Indexing scheme relating to specific properties of organic compounds
- C07B2200/13—Crystalline forms, e.g. polymorphs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
Definitions
- the present invention relates to crystals of a phenanthroline derivative and a method for producing the same.
- the phenanthroline derivative is a compound useful as a light emitting element material that can be used in fields such as display elements, flat panel displays, backlights, lighting, interiors, signs, signboards, electronic cameras, and optical signal generators.
- a material for a light emitting element including the phenanthroline derivative represented by the general formula (1) described later has been disclosed, and as a method for producing the phenanthroline derivative, 1,3-di (1,10) has been disclosed.
- -Phenanthroline-2-yl) Benzene is allowed to act on phenyllithium and then oxidized, or 1,3-dibromobenzene is reacted with t-butyllithium and then 2-phenyl-1,10-phenanthroline is allowed to act on it. Then, a method of oxidizing is disclosed (see, for example, Patent Document 1).
- a dibromoaromatic compound is dilithiated with n-butyllithium or sec-butyllithium, and then nitrogen-containing.
- a method of adding an aromatic ring derivative and then oxidizing it has been proposed (see, for example, Patent Document 2).
- a polymer electrolyte composition containing an ionic group-containing polymer, an organic phosphorus-based additive, and a nitrogen-containing heteroaromatic ring-based additive as a method for producing a nitrogen-containing heteroaromatic ring-based additive, 8- A method of reacting an amino-7-quinoline carboaldehyde with 1,3-diacetylbenzene and potassium hydroxide, then reacting with phenyllithium, and then oxidizing and recrystallizing is disclosed (for example, Patent Document). 3).
- Organic compounds generally have a plurality of solid states such as amorphous and crystalline. The same applies to phenanthroline derivatives, and crystalline polymorphs are present. Even if the crystal structure of the phenanthroline derivative is the same on a molecular basis, it affects the chemical and physical properties and handleability because the molecular packing mode is different. For example, when the above-mentioned phenanthroline compound is used as a light emitting element material, it is generally sublimated and purified, but Patent Document 1 does not disclose that its solid state can be specified, and is described in Patent Document 2.
- the phenanthroline derivative obtained by the conventional production method has a low chemical purity, there is a problem that the chemical purity is insufficient to be used as a light emitting element material even after sublimation purification. Further, although the crystal form cannot be specified from the production method disclosed in Patent Document 3, a solvate crystal is formed depending on the crystal form and a large amount of residual solvent is used, which causes bumping during sublimation purification. There was a problem.
- an object of the present invention is to provide crystals of a phenanthroline derivative having high chemical purity and a small amount of residual solvent, and a method for producing the same.
- the present invention has a structure represented by the general formula (1), and in powder X-ray diffraction, the diffraction angles 2 ⁇ (°) 6.7 ⁇ 0.2, 8.2 ⁇ 0.2, 13. It is a crystal of a phenanthroline derivative having peaks at 7 ⁇ 0.2, 17.7 ⁇ 0.2 and 22.2 ⁇ 0.2, respectively.
- another aspect of the present invention has a structure represented by the general formula (1), and in powder X-ray diffraction, the diffraction angles are 2 ⁇ (°) 5.0 ⁇ 0.2 and 7.5 ⁇ 0.
- a crystal of a phenanthroline derivative having peaks at 2, 8.7 ⁇ 0.2, 12.5 ⁇ 0.2 and 17.3 ⁇ 0.2, respectively.
- another aspect of the present invention has a structure represented by the general formula (1), and in powder X-ray diffraction, the diffraction angles are 2 ⁇ (°) 5.2 ⁇ 0.2 and 7.0 ⁇ 0. It is a crystal of a phenanthroline derivative having peaks at 2, 16.4 ⁇ 0.2, 20.0 ⁇ 0.2 and 23.6 ⁇ 0.2, respectively, and this crystal is for obtaining a C-type crystal described later. It is extremely suitable as a crystal of.
- X represents a phenylene group or a naphthylene group.
- the crystals of the phenanthroline derivative of the present invention have high chemical purity and a small amount of residual solvent. Therefore, there is an effect that bumping in sublimation purification can be suppressed. Further, it has an effect that it can be suitably used as a light emitting device material after sublimation purification by taking advantage of its high chemical purity. Further, when a specific pyrromethene compound is used in combination, the light emitting element can be driven at a low voltage when the light emitting element is manufactured.
- FIG. 5 is a powder X-ray diffraction pattern of a B-type crystal of a phenanthroline derivative represented by the general formula (1) obtained in Example 1. It is a figure which shows the differential thermal analysis curve obtained by the differential thermogravimetric analysis simultaneous measurement of the B-type crystal of the phenanthroline derivative represented by the general formula (1) obtained by Example 1.
- FIG. It is a powder X-ray diffraction pattern of the C-type crystal of the phenanthroline derivative represented by the general formula (1) obtained by Example 3.
- FIG. It is a figure which shows the differential thermal analysis curve obtained by the differential thermogravimetric analysis simultaneous measurement of the C-type crystal of the phenanthroline derivative represented by the general formula (1) obtained by Example 3.
- FIG. 6 is a powder X-ray diffraction pattern of an E-type crystal of a phenanthroline derivative represented by the general formula (1) obtained in Example 6. It is a figure which shows the differential thermal analysis curve obtained by the differential thermogravimetric analysis simultaneous measurement of the E-type crystal of the phenanthroline derivative represented by the general formula (1) obtained by Example 6.
- FIG. FIG. 5 is a powder X-ray diffraction pattern of a D-type crystal of a phenanthroline derivative represented by the general formula (1) obtained in Comparative Example 1. It is a figure which shows the differential thermal analysis curve obtained by the differential thermogravimetric analysis simultaneous measurement of the D-type crystal of the phenanthroline derivative represented by the general formula (1) obtained by the comparative example 1.
- the inventions according to claims 1 to 3 in the claims are inventions of C-type crystals of a phenanthroline derivative.
- the invention according to claim 16 is an invention of an E-type crystal of a phenanthroline derivative.
- the inventions according to claims 17 to 19 are inventions of B-type crystals of a phenanthroline derivative.
- the inventions according to claims 12 to 15 are inventions of a production method for producing a C-type crystal from an E-type crystal.
- the invention according to claim 20 is an invention of a production method for producing a B-shaped crystal.
- the crystal of the phenanthroline derivative according to the first aspect of the present invention has a structure represented by the general formula (1), and in powder X-ray diffraction, the diffraction angle is 2 ⁇ (°) 6.7 ⁇ 0.2, 8. It has a specific crystalline form with peaks at 2 ⁇ 0.2, 13.7 ⁇ 0.2, 17.7 ⁇ 0.2 and 22.2 ⁇ 0.2, respectively, as used herein. Is referred to as a B-shaped crystal.
- the crystal of the phenanthroline derivative according to the second aspect of the present invention has a structure represented by the general formula (1), and in powder X-ray diffraction, a diffraction angle of 2 ⁇ (°) 5.0 ⁇ 0.2, It has a specific crystalline form with peaks at 7.5 ⁇ 0.2, 8.7 ⁇ 0.2, 12.5 ⁇ 0.2 and 17.3 ⁇ 0.2, respectively, and is described herein. In the book, it is called a C-shaped crystal.
- B-type crystals and C-type crystals of phenanthroline derivatives have high chemical purity and a small amount of residual solvent, so that bumping in sublimation purification can be suppressed. Further, taking advantage of its high chemical purity, it can be suitably used as a light emitting device material after sublimation purification.
- X represents a phenylene group or a naphthylene group.
- a phenylene group is preferable from the viewpoint of molecular weight and sublimation purification temperature.
- Examples of the phenanthroline derivative represented by the general formula (1) include those having the following structure.
- 1,3-bis (9-phenyl-1,10-phenanthroline-2-yl) benzene is preferable from the viewpoint of ease of synthesis and stability of the thin film.
- the crystals shown as B-type crystals have diffraction angles of 2 ⁇ (°) 6.7 ⁇ 0.2, 8.2 ⁇ 0.2, 13.7 ⁇ 0 in powder X-ray diffraction. Crystals having peaks at .2, 17.7 ⁇ 0.2 and 22.2 ⁇ 0.2, respectively, and the crystals shown as C-type crystals have diffraction angles of 2 ⁇ (°) 5.0 ⁇ 0.2, 7 It is a crystal having peaks at 5.5 ⁇ 0.2, 8.7 ⁇ 0.2, 12.5 ⁇ 0.2 and 17.3 ⁇ 0.2, respectively.
- the powder X-ray diffraction can be measured under the following conditions using a powder X-ray diffractometer.
- the measurement sample is prepared by filling a sample plate (material: silicon; depth: 0.2 mm) with the sample and flattening the sample surface.
- X-ray source CuK ⁇ ray * Curved crystal monochromator (graphite) is used
- Output 40kV / 50mA
- Divergence slit 1/2 °
- Divergence vertical restriction slit 5 mm
- Scattering slit 1/2 °
- Light receiving slit 0.15 mm
- Detector Scintillation counter Scan method: 2 ⁇ / ⁇ scan, continuous scan Measurement range (2 ⁇ ): 2 to 30 ° Scan speed (2 ⁇ ): 20 ° / min Counting step (2 ⁇ ): 0.04 °.
- the B-type crystal of the phenanthroline derivative of the present invention preferably has an endothermic peak in the range of 180 to 184 ° C. in the differential thermal weight simultaneous measurement (hereinafter, may be abbreviated as "TG-DTA").
- TG-DTA differential thermal weight simultaneous measurement
- Such an endothermic peak is one of the characteristics for specifying the crystal form, and having an endothermic peak in the range of 180 to 184 ° C. means that it is the above-mentioned B-type crystal.
- the C-type crystal of the phenanthroline derivative of the present invention preferably has an endothermic peak in the range of 243 to 247 ° C. in the simultaneous measurement of differential thermogravimetric analysis. Having an endothermic peak in the range of 243 to 247 ° C. means that it is the above-mentioned C-type crystal.
- TG-DTA can be measured under the following conditions using a TG-DTA device, and the temperature at the peak top indicated by the DTA curve is set as the endothermic peak. Temperature rise rate: 5 ° C / min Atmosphere: Dry nitrogen (flow rate: 100 mL / min) Sample cell: Aluminum open cell Sample amount: 5 to 15 mg.
- the phenanthroline derivative represented by the general formula (1) can be produced, for example, by the method described in JP-A-2008-189660. That is, the desired phenanthroline derivative can be obtained by dilythiolating the dibromobenzene derivative with alkyllithium, allowing 2-phenyl-1,10-phenanthroline to act on the derivative, and then oxidizing the derivative.
- the B-type crystal of the phenanthroline derivative represented by the general formula (1) of the first aspect of the present invention is, for example, an arbitrary form of the phenanthroline derivative represented by the general formula (1), an aprotic polar solvent and an aprotic polar solvent. Obtained by a method having a step (I) of dissolving and crystallizing in a mixed solvent containing an aromatic solvent, and then a step (II) of dissolving and crystallizing the crystals obtained in step (I) in an ether solvent. be able to.
- aprotonic polar solvent examples include amide-based solvents such as N, N-dimethylformamide, N, N-dimethylacetamide, and N-methylpyrrolidone; sulfoxide-based solvents such as dimethylsulfoxide; , 3-Dimethyl-2-imidazolidinone, N, N-dimethylpropylene urea and other urea solvents; acetonitrile, propionitrile and other nitrile solvents; pyridine, 2-methylpyridine and other pyridine solvents and the like. .. Two or more of these may be used. Among these, an amide solvent, a sulfoxide solvent, and a urea solvent are preferable, and 1,3-dimethyl-2-imidazolidinone is more preferable from the viewpoint of improving the recovery rate of B-type crystals.
- amide-based solvents such as N, N-dimethylformamide, N, N-dimethylacetamide, and N-methylpyrrol
- aromatic solvent examples include benzene, chlorobenzene, anisole, toluene, xylene, cumene, mesitylene and the like. Two or more of these may be used. Among these, anisole, toluene and xylene are preferable, and toluene is more preferable from the viewpoint of improving the recovery rate of B-type crystals.
- the content of the aromatic solvent is 50 with respect to 100 parts by weight of the aprotic polar solvent from the viewpoint of improving the recovery rate of the B-type crystal. It is preferably up to 500 parts by weight, more preferably 100 to 300 parts by weight.
- the solvents other than the aprotic polar solvent and the aromatic solvent are mixed as long as the crystals of the phenanthroline derivative having the desired diffraction angle can be obtained. It may be contained in a solvent.
- the amount of the mixed solvent used is preferably 300 parts by weight or more, more preferably 500 parts by weight or more, based on 100 parts by weight of the phenanthroline derivative represented by the general formula (1), from the viewpoint of facilitating stirring.
- the amount of the mixed solvent used is preferably 10,000 parts by weight or less, preferably 10,000 parts by weight or less, based on 100 parts by weight of the phenanthroline derivative represented by the general formula (1), from the viewpoint of improving the production efficiency per unit volume. More preferably, it is 000 parts by weight or less.
- the order of adding the solvent in the step (I) is not particularly limited.
- an aprotic polar solvent is added to the phenanthroline derivative represented by the general formula (1) and heated to dissolve it, and then an aromatic solvent is added. May be added.
- the heating temperature is preferably 50 ° C. or higher, more preferably 80 ° C. or higher, from the viewpoint of rapidly dissolving the phenanthroline derivative represented by the general formula (1).
- the heating temperature is preferably 150 ° C. or lower, more preferably 130 ° C. or lower, from an industrial point of view. It is not always necessary to completely dissolve the phenanthroline derivative, but if it is not completely dissolved, it is preferable to set the heating time according to the solubility. In this case, the heating time is preferably 0.5 to 100 hours, more preferably 1 to 50 hours.
- the cooling temperature is preferably ⁇ 20 to 30 ° C., more preferably ⁇ 10 to 10 ° C. from the viewpoint of improving the recovery rate of B-type crystals.
- the cooling rate is preferably 0.1 to 50 hours, more preferably 0.5 to 20 hours. While cooling, it may be agitated or allowed to stand.
- the ether solvent examples include acyclic ethers such as diethyl ether, diisopropyl ether, cyclopentyl methyl ether, tert-butyl methyl ether, dimethoxyethane and diethylene glycol dimethyl ether; tetrahydrofuran, 2-methyl tetrahydrofuran, 1,4-dioxane and the like. Cyclic ethers and the like can be mentioned. Two or more of these may be used. Among these, cyclic ethers are preferable, and tetrahydrofuran is more preferable from the viewpoint of improving the recovery rate of B-type crystals.
- acyclic ethers such as diethyl ether, diisopropyl ether, cyclopentyl methyl ether, tert-butyl methyl ether, dimethoxyethane and diethylene glycol dimethyl ether
- tetrahydrofuran 2-methyl tetrahydrofuran
- the amount of the ether solvent used is preferably 300 parts by weight or more, more preferably 500 parts by weight or more, based on 100 parts by weight of the phenanthroline derivative represented by the general formula (1), from the viewpoint of facilitating stirring.
- the amount of the ether solvent used is preferably 10,000 parts by weight or less with respect to 100 parts by weight of the phenanthroline derivative represented by the general formula (1) from the viewpoint of improving the production efficiency per unit volume. More preferably, it is 000 parts by weight or less.
- step (II) as a method for dissolving the phenanthroline derivative represented by the general formula (1) in an ether solvent, it is preferable to dissolve it by heating.
- the heating temperature is preferably 40 ° C. or higher, more preferably 60 ° C. or higher, from the viewpoint of rapidly dissolving the phenanthroline derivative represented by the general formula (1).
- the heating temperature is preferably 150 ° C. or lower, more preferably 130 ° C. or lower, from an industrial point of view. It is not always necessary to completely dissolve the phenanthroline derivative, but if it is not completely dissolved, it is preferable to set the heating time according to the solubility. In this case, the heating time is preferably 0.5 to 100 hours, more preferably 1 to 50 hours.
- step (II) When heating and melting in step (II), it is preferable to cool in the step of crystallization.
- the preferred ranges of cooling temperature and cooling rate are the same as in step (I).
- the B-type crystal of the phenanthroline derivative obtained in advance may be added as a seed crystal. Further, it may further have a step of drying the obtained crystals.
- the C-type crystal of the phenanthroline derivative represented by the general formula (1) of the second aspect of the present invention is, for example, an arbitrary form of the phenanthroline derivative represented by the general formula (1), an aprotic polar solvent and an aprotic polar solvent. It can be obtained by a method having a step (I) of dissolving and crystallizing in a mixed solvent containing an aromatic solvent, and then a step (III) of drying the crystals obtained in the step (I) at 50 ° C. or higher.
- aprotic polar solvent examples include those exemplified in the method for producing a B-type crystal according to the first aspect.
- amide-based solvents, sulfoxide-based solvents, and urea-based solvents are preferable, and from the viewpoint of improving the recovery rate of C-type crystals, 1,3-dimethyl-2-imidazolidinone, N-methylpyrrolidone, N, N -Dimethylacetamide is more preferred.
- aromatic solvent examples include those exemplified in the method for producing a B-shaped crystal according to the first aspect.
- anisole, toluene, and xylene are preferable, and anisole is more preferable from the viewpoint of improving the recovery rate of C-type crystals.
- the content of the aromatic solvent is 50 with respect to 100 parts by weight of the aprotic polar solvent from the viewpoint of improving the recovery rate of the C-shaped crystal. It is preferably up to 210 parts by weight, more preferably 100 to 205 parts by weight.
- crystals of the phenanthroline derivative having the desired diffraction angle can be obtained as the solvent other than the aprotic polar solvent and the aromatic solvent. It may be contained in the mixed solvent as long as possible.
- the amount of the mixed solvent used is preferably 300 parts by weight or more, more preferably 500 parts by weight or more, based on 100 parts by weight of the phenanthroline derivative represented by the general formula (1), from the viewpoint of facilitating stirring.
- the amount of the mixed solvent used is preferably 10,000 parts by weight or less, preferably 10,000 parts by weight or less, based on 100 parts by weight of the phenanthroline derivative represented by the general formula (1), from the viewpoint of improving the production efficiency per unit volume. More preferably, it is 000 parts by weight or less.
- the order of adding the solvent in the step (I) is not particularly limited.
- an aprotic polar solvent is added to the phenanthroline derivative represented by the general formula (1) and heated to dissolve it, and then an aromatic solvent is added. May be added.
- step (I) as a method for dissolving the phenanthroline derivative represented by the general formula (1) in the mixed solvent, it is preferable to dissolve it by heating.
- the preferable ranges of the heating temperature and the heating time are the same as those in the step (I) in the method for producing a B-shaped crystal according to the first aspect.
- the cooling temperature and the cooling rate are the same as those in the step (I) in the method for producing a B-shaped crystal according to the first aspect.
- the drying temperature in the step (III) is preferably 50 ° C. or higher, more preferably 80 ° C. or higher, from the viewpoint of efficiently performing the crystal polymorphic transition.
- the drying temperature is preferably 150 ° C. or lower, more preferably 130 ° C. or lower, from an industrial point of view.
- the drying in the step (III) is preferably vacuum drying.
- the degree of pressure reduction for vacuum drying is preferably 666.6 Pa (5 mmHg) or less from the viewpoint of quickly removing the residual solvent.
- the C-type crystal of the phenanthroline derivative represented by the general formula (1) has, for example, the structure represented by the general formula (1), and in powder X-ray diffraction, the diffraction angle is 2 ⁇ (°) 5. Crystals of phenanthroline derivatives with peaks at 2 ⁇ 0.2, 7.0 ⁇ 0.2, 16.4 ⁇ 0.2, 20.0 ⁇ 0.2 and 23.6 ⁇ 0.2, respectively. It can also be obtained by crystal polymorphic transition (referred to as E-type crystal in the specification). The C-type crystal of the phenanthroline derivative represented by the general formula (1) can also be obtained by heating a crystal other than the C-type crystal and drying it to promote the crystal polymorphic transition, but the temperature is high.
- the E-type crystal is preferable from an industrial point of view because the crystal polymorphic transition proceeds at a relatively low temperature and a C-type crystal can be obtained. In this case, it is preferable to obtain an E-type crystal in the above-mentioned step (I) and to obtain a C-type crystal by crystal polymorph transition in the above-mentioned step (III).
- the E-type crystal of the phenanthroline derivative is effective as a precursor of the C-type crystal because it easily transforms into the C-type crystal by heating and drying.
- the E-type crystal of the phenanthroline derivative preferably has an endothermic peak in the range of 94 to 98 ° C. in the simultaneous measurement of differential thermogravimetric analysis, and having an endothermic peak in such a temperature range means that it is an E-type crystal. means.
- the powder X-ray diffraction measurement and the differential thermogravimetric simultaneous measurement can be performed by the same method as described for the B-type crystal and the C-type crystal described above.
- the E-type crystal of the phenanthroline derivative represented by the general formula (1) is, for example, a mixed solvent containing an arbitrary form of the phenanthroline derivative represented by the general formula (1), an aprotonic polar solvent and an aromatic solvent. It can be obtained by a method having a step (I) of dissolving and crystallizing in a solvent, and then a step (IV) of drying the crystals obtained in the step (I) at a temperature lower than 50 ° C.
- aprotic polar solvent examples include those exemplified in the method for producing a B-type crystal according to the first aspect.
- amide-based solvents, sulfoxide-based solvents, and urea-based solvents are preferable, and from the viewpoint of improving the recovery rate of C-type crystals, 1,3-dimethyl-2-imidazolidinone, N-methylpyrrolidone, N, N -Dimethylacetamide is more preferred.
- aromatic solvent examples include those exemplified in the method for producing a B-shaped crystal according to the first aspect.
- anisole, toluene, and xylene are preferable, and anisole is more preferable from the viewpoint of improving the recovery rate of C-type crystals.
- the content of the aromatic solvent is 50 with respect to 100 parts by weight of the aprotic polar solvent from the viewpoint of improving the recovery rate of the C-shaped crystal. It is preferably up to 210 parts by weight, more preferably 100 to 205 parts by weight.
- crystals of a phenanthroline derivative having a desired diffraction angle can be obtained as a solvent other than the aprotic polar solvent and the aromatic solvent. As long as it is contained in the mixed solvent, it may be contained.
- the amount of the mixed solvent used is preferably 300 parts by weight or more, more preferably 500 parts by weight or more, based on 100 parts by weight of the phenanthroline derivative represented by the general formula (1), from the viewpoint of facilitating stirring.
- the amount of the mixed solvent used is preferably 10,000 parts by weight or less, preferably 10,000 parts by weight or less, based on 100 parts by weight of the phenanthroline derivative represented by the general formula (1), from the viewpoint of improving the production efficiency per unit volume. More preferably, it is 000 parts by weight or less.
- the order of adding the solvent in the step (I) is not particularly limited.
- an aprotic polar solvent is added to the phenanthroline derivative represented by the general formula (1) and heated to dissolve it, and then an aromatic solvent is added. May be added.
- step (I) as a method for dissolving the phenanthroline derivative represented by the general formula (1) in the mixed solvent, it is preferable to dissolve it by heating.
- the preferable ranges of the heating temperature and the heating time are the same as those in the step (I) in the method for producing a B-shaped crystal according to the first aspect.
- the cooling temperature and the cooling rate are the same as those in the step (I) in the method for producing a B-shaped crystal according to the first aspect.
- the drying temperature in the step (IV) is preferably 10 ° C. or higher, more preferably 20 ° C. or higher, from the viewpoint of quickly removing the residual solvent. On the other hand, the drying temperature is preferably less than 50 ° C., more preferably 30 ° C. or lower, from the viewpoint of maintaining the crystal form.
- the E-type crystal of the phenanthroline derivative represented by the general formula (1) obtained by the above method By transferring the E-type crystal of the phenanthroline derivative represented by the general formula (1) obtained by the above method to a polymorphic crystal, a C-type crystal can be efficiently obtained.
- the step of transferring the crystal polymorph 50 ° C. or higher is preferable, and 80 ° C. or higher is more preferable.
- the temperature is preferably 150 ° C. or lower, more preferably 130 ° C. or lower, from an industrial point of view.
- the B-type crystal or C-type crystal of the phenanthroline derivative represented by the general formula (1) of the present invention has a small amount of residual solvent and has extremely high chemical purity, so that it can be suitably used as a light emitting element material. Since the B-type crystal or C-type crystal of the phenanthroline derivative of the present invention has high electron transport property and electron injection property, it is particularly suitable for the electron transport layer, the electron injection layer, and the charge generation layer among the light emitting elements. Can be used for.
- the B-type crystal or C-type crystal of the phenanthroline derivative of the present invention has a small amount of residual solvent and extremely high chemical purity, the amount of degassing when producing a luminous element is small, and a high-purity film can be formed. Therefore, a light emitting element having high luminous efficiency can be obtained.
- the driving voltage is reduced and high-efficiency light emission can be obtained, it is suitably used for a light emitting device containing a thermally activated delayed fluorescent material (sometimes referred to as "TADF material") in the light emitting layer.
- TADF material thermally activated delayed fluorescent material
- the light emitting element of the present invention has a function of converting electrical energy into light.
- direct current is mainly used as electrical energy, but pulse current and alternating current can also be used.
- the current value and the voltage value are not particularly limited, and the characteristic values required differ depending on the purpose of the device, but it is preferable to obtain high brightness at a low voltage from the viewpoint of power consumption and life of the device.
- the half width of the emission spectrum by energization is preferably 60 nm or less, more preferably 50 nm or less, further preferably 45 nm or less, and particularly preferably 30 nm or less. preferable.
- the light emitting device of the present invention has a narrow half width of the light emitting spectrum, it is more preferable to use it as a top emission type light emitting device. Due to the resonance effect of the microcavity, the top emission type light emitting element has higher luminous efficiency as the half width is narrower. Therefore, it is possible to achieve both high color purity and high luminous efficiency.
- the light emitting element of the present invention is suitably used, for example, as a display device application such as a display in which a matrix method, a segment method, or both types are used in combination. It is also preferably used as a backlight for various devices.
- the backlight is mainly used for the purpose of improving the visibility of display devices such as displays that do not emit light by itself, and is used for display devices such as liquid crystal displays, clocks, audio devices, automobile panels, display boards and signs.
- the light emitting element of the present invention is preferably used for a liquid crystal display, particularly a backlight for a personal computer whose thinness is being studied, and can provide a backlight thinner and lighter than the conventional one.
- the light emitting element of the present invention is also preferably used as various lighting devices. It is possible to achieve both high luminous efficiency and high color purity, and because it is possible to make it thinner and lighter, it is possible to realize a lighting device that combines low power consumption, vivid emission color, and high design. ..
- the light emitting device of the present invention has, for example, a structure having an anode and a cathode, and an organic layer between the anode and the cathode.
- the organic layer preferably includes at least a light emitting layer, and the light emitting layer is an organic electroluminescent device that emits light by electric energy.
- the light emitting element may be either a bottom emission type or a top emission type.
- the layer structure of the organic layer between the anode and the cathode is not only composed of the light emitting layer but also 1) light emitting layer / electron transporting layer, 2) hole transporting layer / light emitting layer, and 3).
- Hole transport layer / light emitting layer / electron transport layer 4) hole injection layer / hole transport layer / light emitting layer / electron transport layer, 5) hole transport layer / light emitting layer / electron transport layer / electron injection layer, 6 ) Hole injection layer / hole transport layer / light emitting layer / electron transport layer / electron injection layer, 7) hole injection layer / hole transport layer / light emitting layer / hole blocking layer / electron transport layer / electron injection layer, 8) Examples thereof include a laminated structure such as a hole injection layer / a hole transport layer / an electron blocking layer / a light emitting layer / a hole blocking layer / an electron transport layer / an electron injection layer.
- tandem type light emitting element in which a plurality of the above laminated configurations are laminated via an intermediate layer may be used.
- the intermediate layer generally include an intermediate electrode, an intermediate conductive layer, a charge generation layer, an electron extraction layer, a connection layer, an intermediate insulation layer, and the like, and known material configurations can be used.
- Preferred specific examples of the tandem type light emitting element are 9) hole injection layer / hole transport layer / light emitting layer / electron transport layer / electron injection layer / charge generation layer / hole injection layer / hole transport layer / light emitting layer /
- a laminated structure such as an electron transport layer / electron injection layer can be mentioned.
- each of the above layers may be either a single layer or a plurality of layers, and may be doped.
- the electron transport layer is a layer in which electrons are injected from the cathode and further electrons are transported.
- the electron transport material used for the electron transport layer is required to have a high electron affinity, a high electron mobility, excellent stability, and a substance in which impurities that serve as traps are unlikely to be generated. Further, a compound having a molecular weight of 400 or more is preferable because a compound having a low molecular weight tends to crystallize and deteriorate the film quality.
- the electron transport layer in the present invention also includes a hole blocking layer capable of efficiently blocking the movement of holes as a synonym.
- the hole blocking layer and the electron transporting layer may be formed alone or by laminating a plurality of materials.
- the electron transporting material examples include polycyclic aromatic derivatives, styryl-based aromatic ring derivatives, quinone derivatives, phosphoroxide derivatives, quinolinol complexes such as tris (8-quinolinolate) aluminum (III), benzoquinolinol complexes, hydroxyazole complexes, and azomethine complexes. , Tropolone metal complexes and various metal complexes such as flavonol metal complexes.
- the electron-accepting nitrogen represents a nitrogen atom forming a multiple bond with an adjacent atom. Since the heteroaryl group containing electron-accepting nitrogen has a large electron affinity, it becomes easy for electrons to be injected from the cathode, and a lower voltage drive becomes possible. In addition, the supply of electrons to the light emitting layer is increased, and the recombination probability is increased, so that the luminous efficiency is improved.
- Examples of the compound having a heteroaryl group structure containing electron-accepting nitrogen include a pyridine derivative, a triazine derivative, a pyrazine derivative, a pyrimidine derivative, a quinoline derivative, a quinoxaline derivative, a quinazoline derivative, a naphthylidine derivative, a benzoquinoline derivative, a phenanthroline derivative, and an imidazole.
- Preferred compounds include derivatives, oxazole derivatives, thiazole derivatives, triazole derivatives, oxaziazole derivatives, thiadiazol derivatives, benzimidazole derivatives, benzoxazole derivatives, benzthiazole derivatives, phenanthle midazole derivatives, and oligopyridine derivatives such as bipyridine and tarpyridine. Is listed as.
- imidazole derivatives such as tris (N-phenylbenzimidazole-2-yl) benzene
- oxadiazole derivatives such as 1,3-bis [(4-tert-butylphenyl) -1,3,4-oxadiazolyl] phenylene.
- Triazole derivatives such as N-naphthyl-2,5-diphenyl-1,3,4-triazole; phenanthroline derivatives such as vasocproin and 1,3-bis (1,10-phenanthroline-9-yl) benzene; 2,2 Benzene (benzo [h] quinoline-2-yl) -9,9'-benzoquinoline derivatives such as spirobifluorene; 2,5-bis (6'-(2', 2 "-bipyridyl))-1 , 1-Dimethyl-3,4-diphenylsilol and other bipyridine derivatives; 1,3-bis (4'-(2,2': 6'2 "-terpyridinyl)) benzene and other terpyridine derivatives; bis (1-naphthyl) ) -4- (1,8-naphthylidine-2-yl) naphthylidine derivatives such as phenylphosphine oxide
- the electron transport material may be used alone or in combination of two or more.
- the electron transport layer may contain a donor material.
- the donor material is a compound that facilitates electron injection from the cathode or the electron injection layer into the electron transport layer by improving the electron injection barrier, and further improves the electrical conductivity of the electron transport layer.
- donor materials include alkali metals such as lithium, inorganic salts containing alkali metals such as lithium fluoride, complexes of alkali metals such as lithium quinolinol and organic substances, alkaline earth metals, and alkaline earth metals.
- alkali metals such as lithium
- inorganic salts containing alkali metals such as lithium fluoride
- complexes of alkali metals such as lithium quinolinol and organic substances
- alkaline earth metals and alkaline earth metals.
- examples thereof include inorganic salts contained, complexes of alkaline earth metals and organic substances, rare earth metals such as europium and itterbium, inorganic salts containing rare earth metals, and complexes of rare earth metals and organic substances.
- metallic lithium, rare earth metal, or lithium quinolinol (Liq) is particularly preferable.
- the electron injection layer is formed for the purpose of assisting the injection of electrons from the cathode to the electron transport layer, and is composed of a compound having a heteroaryl ring structure containing electron-accepting nitrogen and the above-mentioned donor material.
- an insulator or a semiconductor inorganic substance can be used for the electron injection layer. It is preferable to use these materials because it is possible to prevent a short circuit of the light emitting element and improve the electron injection property.
- an insulator it is preferable to use at least one metal compound selected from the group consisting of alkali metal chalcogenides, alkaline earth metal chalcogenides, alkali metal halides and alkaline earth metal halides.
- the charge generation layer is a layer that generates or separates charges by applying a voltage and injects charges into adjacent layers.
- the charge generation layer may be formed of one layer, or a plurality of layers may be laminated.
- a layer that easily generates electrons as an electric charge is called an n-type charge generation layer, and a layer that easily generates holes is called a p-type charge generation layer.
- the charge generation layer is preferably composed of a double layer, and more preferably a pn junction type charge generation layer composed of an n-type charge generation layer and a p-type charge generation layer.
- the pn junction type charge generation layer an electric charge is generated by applying a voltage in a light emitting element, or the charge is separated into holes and electrons, and these holes and electrons are separated into a hole transport layer and an electron transport layer. Is injected into the light emitting layer via.
- the n-type charge generating layer supplies electrons to the first light emitting layer existing on the anode side to supply p-type charges.
- the generation layer supplies holes to the second light emitting layer existing on the cathode side.
- the n-type charge generation layer consists of an n-type dopant and an n-type host, and conventional materials can be used for these.
- the n-type dopant the donor material exemplified as the material of the electron transport layer is preferably used.
- alkali metals or salts thereof and rare earth metals are preferable, and materials selected from metallic lithium, lithium fluoride (LiF), lithium quinolinol (Liq) and metallic ytterbium are more preferable.
- n-type host those exemplified as the electron transport material are preferably used.
- a material selected from a triazine derivative, a phenanthroline derivative and an oligopyridine derivative is preferable, and a phenanthroline derivative or a terpyridine derivative is more preferable.
- the p-type charge generation layer is composed of a p-type dopant and a p-type host, and conventional materials can be used for these.
- the acceptor material exemplified as the material of the hole injection layer, iodine, FeCl 3 , FeF 3 , SbCl 5, and the like are preferably used. Specific examples thereof include HAT-CN6, F4-TCNQ, tetracyanoquinodimethane derivative, radialene derivative, iodine, FeCl 3 , FeF 3 , SbCl 5 and the like.
- a thin film of the p-type dopant may be formed, and the film thickness is preferably 10 nm or less. Further, an arylamine derivative is preferable as the p-type host.
- the crystal of the phenanthroline derivative of the present invention can be used for an electron transport layer, an electron injection layer, and a charge generation layer, and when used for an electron transport layer, for example, a thickness composed of a host material, a dopant material, and a TADF material. It is preferable to use a vapor-deposited film having a thickness of several tens of nm, which is formed by forming a light emitting layer having a thickness of several tens of nm and laminating on the light emitting layer. The light emitting device thus produced exhibits very high external quantum efficiency.
- the crystal of the phenanthroline derivative of the present invention is used for the electron injection layer, for example, it is preferable to use it in a co-deposited film having a thickness of several nm containing an alkali metal as a donor material, and the same as above. It is preferable that the light emitting layer and the electron transporting layer of the above are sequentially laminated and formed on the electron transporting layer. The light emitting device thus produced also exhibits very high external quantum efficiency.
- the crystal of the phenanthroline derivative of the present invention is used for the charge generation layer, for example, it is used as the n-type host material of the n-type charge generation layer of the tandem type fluorescent light emitting device containing an alkali metal which is an n-type dopant. It is preferable that the same light emitting layer and the electron transporting layer are sequentially laminated and formed on the electron transporting layer. The light emitting device thus produced also exhibits very high external quantum efficiency.
- the anode is an electrode formed on the substrate and is not particularly limited as long as it is a material capable of efficiently injecting holes into the organic layer.
- a transparent or translucent electrode is preferable, and top emission is preferable.
- a reflective electrode is preferable.
- Materials for the transparent or translucent electrode include conductive metal oxides such as zinc oxide, tin oxide, indium oxide, indium tin oxide (ITO), indium zinc oxide (IZO); or gold, silver, aluminum, chromium and the like.
- Metals; conductive polymers such as polythiophene, polypyrrole, polyaniline are exemplified. However, when a metal is used, it is preferable to reduce the film thickness so that light can be semi-transmitted.
- indium tin oxide is more preferable from the viewpoint of transparency and stability.
- the material of the reflective electrode a material that does not absorb all light and has a high reflectance is preferable. Specifically, metals such as aluminum, silver, and platinum are exemplified.
- the method for forming the anode an optimum method can be adopted depending on the material for forming the anode, and examples thereof include a sputtering method, a vapor deposition method, and an inkjet method. For example, a sputtering method is used when an anode is formed of a metal oxide, and a thin-film deposition method is used when an anode is formed of a metal.
- the film thickness of the anode is not particularly limited, but is preferably several nm to several hundred nm. Further, these electrode materials may be used alone, or a plurality of materials may be laminated or mixed. Various wirings, circuits, and switching elements may be interposed between the substrate and the anode.
- the cathode is an electrode formed on the surface opposite to the anode with the organic layer sandwiched between them, and is particularly preferably formed on the electron transport layer or the electron injection layer.
- the material used for the cathode is not particularly limited as long as it can efficiently inject electrons into the light emitting layer, but it is preferably a reflective electrode for a bottom emission type element and a translucent electrode for a top emission type element. Is preferable.
- Metals such as platinum, gold, silver, copper, iron, tin, aluminum and indium are generally used as cathode materials; these metals are combined with low work function metals such as lithium, sodium, potassium, calcium and magnesium. Alloys and multilayer laminated films; or conductive metal oxides such as zinc oxide, tin indium oxide (ITO), and indium zinc oxide (IZO) are preferable. Among them, a metal selected from aluminum, silver and magnesium as a main component is preferable from the viewpoints of electric resistance value, ease of film formation, film stability, luminous efficiency and the like.
- a protective layer may be laminated on the cathode to protect the cathode.
- the material constituting the protective layer is not particularly limited, but for example, metals such as platinum, gold, silver, copper, iron, tin, aluminum and indium; alloys using these metals; silica, titania, silicon nitride and the like.
- Inorganic substances Organic polymer compounds such as polyvinyl alcohol, polyvinyl chloride, and hydrocarbon-based polymer compounds can be mentioned.
- the material used for the protective layer is selected from materials having light transmission in the visible light region.
- the light emitting layer is a layer that emits light by the excitation energy generated by the recombination of holes and electrons.
- the light emitting layer may be composed of a single material, but from the viewpoint of color purity and light emission intensity, a host compound (hereinafter, may be referred to as “first compound”) and a dopant compound (hereinafter, “second compound”). It is preferable that it is composed of two or more kinds of materials (sometimes referred to as "compound of").
- first compound a thermally activated delayed fluorescent compound is a preferable example of the thermally activated delayed fluorescent material.
- Thermally activated delayed fluorescent compounds also commonly referred to as TADF materials
- TADF materials are singlet from triplet excited state by reducing the energy gap between the singlet excited state energy level and the triplet excited state energy level. It is a material that promotes inverse intersystem crossing to the term excited state and improves the generation probability of singlet excited states.
- the difference between the lowest excited singlet energy level and the lowest excited triplet energy level (referred to as ⁇ EST) in the TADF material is preferably 0.3 eV or less.
- the singlet exciton of the second compound Fluorescent emission is observed.
- the lowest excited singlet energy level of the first compound is larger than the lowest excited singlet energy level of the second compound.
- the second compound is a fluorescent light emitting material having a sharp light emitting spectrum, a light emitting element having high efficiency and high color purity can be obtained.
- the light emitting layer contains a thermally activated delayed fluorescent compound, high-efficiency light emission is possible, which contributes to low power consumption of the display.
- the Thermally Activated Delayed Fluorescence Compound may be a compound that exhibits Thermally Activated Delayed Fluorescence with a Single Material, or exhibits Thermally Activated Delayed Fluorescence with a plurality of compounds as in the case of forming an exciplex complex. It may be a compound.
- thermally activated delayed fluorescent compound a single compound or a plurality of compounds may be mixed and used, and known materials can be used. Specific examples thereof include benzonitrile derivatives, triazine derivatives, disulfoxide derivatives, carbazole derivatives, indolocarbazole derivatives, dihydrophenazine derivatives, thiazole derivatives, oxadiazole derivatives and the like. In particular, a compound having an electron donating part (donor part) and an electron attracting part (acceptor part) in the same molecule is preferable.
- the light emitting layer of the light emitting element may contain a pyrromethene boron complex represented by the following general formula (2).
- the first compound is a thermally activated delayed fluorescent compound
- the second compound is a pyrometheneboron complex.
- the pyrromethene boron complex is a useful light emitting material that can obtain a sharp emission spectrum when used as a dopant, but it is necessary to achieve a light emitting element having high luminous efficiency and high durability while maintaining a sharp emission spectrum. Was difficult.
- the pyrromethene boron complex represented by the following general formula (2) can provide a light emitting material having a high fluorescence quantum yield and a sharp emission spectrum, and a light emitting element having high luminous efficiency, color purity and durability. ..
- X 1 is a nitrogen atom or a carbon atom, where the carbon atom includes a hydrogen atom, a substituted or unsubstituted alkyl group, or a substituted or unsubstituted cycloalkyl.
- One atomic or monovalent group selected from the group consisting of a group, a cyano group, a substituted or unsubstituted silyl group, and a substituted or unsubstituted siloxanyl group is bonded.
- R 1 to R 6 are independently hydrogen atom, substituted or unsubstituted alkyl group, substituted or unsubstituted cycloalkyl group, substituted or unsubstituted aryl group, alkoxy group, substituted or unsubstituted alkylthio group, respectively.
- An atom or group to be formed provided that in any one or more of the R 1 and R 2 pairs, the R 2 and R 3 pairs, the R 4 and R 5 pairs, and the R 5 and R 6 pairs.
- a ring may be formed by forming a bond between the groups constituting the set.
- Z 1 and Z 2 are independently halogen atoms, substituted or unsubstituted alkyl groups, substituted or unsubstituted aryl groups, substituted or unsubstituted alkoxy groups, cyano groups, and substituted or unsubstituted aryloxy groups, respectively. It is an atom or group selected from the group consisting of, but may be a ring formed by forming a bond between Z 1 and Z 2.
- hydrogen may be deuterium.
- the substituents in the case of substitution include an alkyl group, a cycloalkyl group, a heterocyclic group, an alkenyl group, a cycloalkenyl group, an alkynyl group, an aryl group, a heteroaryl group, a hydroxyl group and a thiol.
- unsubstituted means that the atom bonded to the target basic skeleton or group is only a hydrogen atom or a deuterium atom.
- substituted means that the atom bonded to the target basic skeleton or group is only a hydrogen atom or a deuterium atom.
- substituted in the compound described below or its partial structure.
- the alkyl group refers to a saturated aliphatic hydrocarbon group such as a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, a sec-butyl group and a tert-butyl group, which are substituted. It may be non-replaceable.
- the additional substituent when substituted is not particularly limited, and examples thereof include an alkyl group, a halogen, an aryl group, and a heteroaryl group, and this point is also common to the following description.
- the number of carbon atoms of the alkyl group is not particularly limited, but is preferably 1 or more and 20 or less, and more preferably 1 or more and 8 or less from the viewpoint of availability and cost.
- the cycloalkyl group refers to a saturated alicyclic hydrocarbon group such as a cyclopropyl group, a cyclohexyl group, a norbornyl group, or an adamantyl group, which may be substituted or unsubstituted.
- the number of carbon atoms in the alkyl group moiety is not particularly limited, but is preferably in the range of 3 or more and 20 or less.
- the heterocyclic group refers to an aliphatic ring having an atom other than carbon such as a pyran ring, a piperidine ring, and a cyclic amide in the ring, which may be substituted or unsubstituted.
- the number of carbon atoms of the heterocyclic group is not particularly limited, but is preferably in the range of 2 or more and 20 or less.
- the alkenyl group refers to an unsaturated aliphatic hydrocarbon group containing a double bond such as a vinyl group, an allyl group, or a butadienyl group, which may be substituted or unsubstituted.
- the carbon number of the alkenyl group is not particularly limited, but is preferably in the range of 2 or more and 20 or less.
- the cycloalkenyl group refers to an unsaturated alicyclic hydrocarbon group containing a double bond such as a cyclopentenyl group, a cyclopentadienyl group, a cyclohexenyl group, etc., which may be substituted or unsubstituted. ..
- the number of carbon atoms of the cycloalkenyl group is not particularly limited, but is preferably in the range of 3 or more and 20 or less.
- the alkynyl group refers to an unsaturated aliphatic hydrocarbon group containing a triple bond such as an ethynyl group, which may be substituted or unsubstituted.
- the number of carbon atoms of the alkynyl group is not particularly limited, but is preferably in the range of 2 or more and 20 or less.
- the alkoxy group refers to a functional group in which an aliphatic hydrocarbon group is bonded via an ether bond such as a methoxy group, an ethoxy group, or a propoxy group, and the aliphatic hydrocarbon group may be substituted or unsubstituted. good.
- the number of carbon atoms of the alkoxy group is not particularly limited, but is preferably in the range of 1 or more and 20 or less.
- the alkylthio group is one in which the oxygen atom of the ether bond of the alkoxy group is replaced with a sulfur atom.
- the hydrocarbon group of the alkylthio group may be substituted or unsubstituted.
- the number of carbon atoms of the alkylthio group is not particularly limited, but is preferably in the range of 1 or more and 20 or less.
- the aryloxy group refers to a functional group in which an aromatic hydrocarbon group is bonded via an ether bond, such as a phenoxy group, and the aromatic hydrocarbon group may be substituted or unsubstituted.
- the number of carbon atoms of the aryloxy group is not particularly limited, but is preferably in the range of 6 or more and 40 or less.
- the arylthio group is one in which the oxygen atom of the ether bond of the aryloxy group is replaced with a sulfur atom.
- the aromatic hydrocarbon group in the arylthio group may be substituted or unsubstituted.
- the number of carbon atoms of the arylthio group is not particularly limited, but is preferably in the range of 6 or more and 40 or less.
- the aralkyl group is an alkyl group in which one of the hydrogen atoms of the alkyl group is substituted with an aryl group, for example, a phenylmethyl group or a phenylethyl group.
- the carbon number of the aralkyl group is not particularly limited, but is preferably in the range of 6 or more and 40 or less.
- the aryl group may be either a monocyclic ring or a fused ring, and may be, for example, a phenyl group, a naphthyl group, a fluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthryl group, an anthrasenyl group, a benzophenanthryl group or a benzo.
- aromatic hydrocarbon group such as anthrasenyl group, chrysenyl group, pyrenyl group, fluoranthenyl group, triphenylenyl group, benzofluoranthenyl group, dibenzoanthrasenyl group, perylenel group and helisenyl group.
- a group selected from the group consisting of a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a phenanthryl group, an anthracenyl group, a pyrenyl group, a fluoranthenyl group and a triphenylenyl group is preferable.
- the aryl group may be substituted or unsubstituted.
- a group in which a plurality of phenyl groups such as a biphenyl group and a terphenyl group are bonded via a single bond is treated as a phenyl group having an aryl group as a substituent.
- the number of carbon atoms of the aryl group is not particularly limited, but is preferably in the range of 6 or more and 40 or less, and more preferably 6 or more and 30 or less. Further, in the case of a phenyl group, when there are substituents on two adjacent carbon atoms in the phenyl group, a ring structure may be formed between these substituents.
- the heteroaryl group may be either a monocyclic group or a fused ring, and may be, for example, a pyridyl group, a furanyl group, a thiophenyl group, a quinolinyl group, an isoquinolinyl group, a pyrazinyl group, a pyrimidyl group, a pyridazinyl group, a triazinyl group, a naphthyldinyl group, a synnolinyl group.
- hetero atom a nitrogen atom, an oxygen atom, or a sulfur atom is preferable.
- the heteroaryl group may be substituted or unsubstituted.
- the number of carbon atoms of the heteroaryl group is not particularly limited, but is preferably in the range of 2 or more and 40 or less, and more preferably 2 or more and 30 or less.
- Halogen refers to an atom selected from fluorine, chlorine, bromine and iodine.
- the cyano group is a functional group whose structure is represented by -CN. Here, it is the carbon atom that is bonded to the other group.
- the acyl group refers to a functional group in which an alkyl group, a cycloalkyl group, an alkenyl group, an alkynyl group, an aryl group, a heteroaryl group, etc., such as an acetyl group, a propionyl group, a benzoyl group, and an acryryl group are bonded via a carbonyl group. .. These substituents may be further substituted.
- the number of carbon atoms of the acyl group is not particularly limited, but is preferably 2 or more and 40 or less, and more preferably 2 or more and 30 or less.
- the alkoxycarbonyl group refers to, for example, a functional group in which an alkyl group, a cycloalkyl group, an aryl group, a heteroaryl group and the like are bonded via an ester bond. These substituents may be further substituted.
- the number of carbon atoms of the alkoxycarbonyl group is not particularly limited, but is preferably in the range of 1 or more and 20 or less. More specifically, methoxycarbonyl group, ethoxycarbonyl group, propoxycarbonyl group, butoxycarbonyl group, isopropoxymethoxycarbonyl group, hexyloxycarbonyl group, phenoxycarbonyl group and the like can be mentioned.
- the carbamoyl group refers to, for example, a functional group in which an alkyl group, a cycloalkyl group, an aryl group, a heteroaryl group and the like are bonded via an amide bond. These substituents may be further substituted.
- the number of carbon atoms of the amide group is not particularly limited, but is preferably in the range of 1 or more and 20 or less. More specifically, a methylamide group, an ethylamide group, a propylamide group, a butyramide group, an isopropylamide group, a hexylamide group, a phenylamide group and the like can be mentioned.
- the number of carbon atoms of the alkylsulfonyl group and the arylsulfonyl group is not particularly limited, but is preferably in the range of 1 or more and 20 or less.
- the alkoxysulfonyl group refers to, for example, a functional group in which an alkyl group, a cycloalkyl group, an aryl group, a heteroaryl group and the like are bonded via a sulfonic acid ester bond.
- these substituents may be further substituted.
- the number of carbon atoms of the alkoxysulfonyl group is not particularly limited, but is preferably in the range of 1 or more and 20 or less.
- the aminosulfonyl group refers to, for example, a functional group in which an alkyl group, a cycloalkyl group, an aryl group, a heteroaryl group and the like are bonded via a sulfonamide bond.
- these substituents may be further substituted.
- the number of carbon atoms of the aminosulfonyl group is not particularly limited, but is preferably in the range of 1 or more and 20 or less.
- the amino group is a substituted or unsubstituted amino group.
- substituents in the case of substitution include an aryl group, a heteroaryl group, a linear alkyl group and a branched alkyl group.
- aryl group and heteroaryl group a phenyl group, a naphthyl group, a pyridyl group and a quinolinyl group are preferable. These substituents may be further substituted.
- the number of carbon atoms is not particularly limited, but is preferably 2 or more and 50 or less, more preferably 6 or more and 40 or less, and particularly preferably 6 or more and 30 or less.
- the silyl group indicates a functional group to which a substituted or unsubstituted silicon atom is bonded, and is, for example, an alkylsilyl group such as a trimethylsilyl group, a triethylsilyl group, a tert-butyldimethylsilyl group, a propyldimethylsilyl group, or a vinyldimethylsilyl group.
- alkylsilyl group such as a trimethylsilyl group, a triethylsilyl group, a tert-butyldimethylsilyl group, a propyldimethylsilyl group, or a vinyldimethylsilyl group.
- arylsilyl groups such as phenyldimethylsilyl group, tert-butyldiphenylsilyl group, triphenylsilyl group and trinaphthylsilyl group.
- Substituents on silicon
- the siloxanyl group refers to a silicon compound group via an ether bond such as a trimethylsiloxanyl group. Substituents on silicon may be further substituted.
- the boryl group is a substituted or unsubstituted boryl group.
- substituent in the case of substitution include an aryl group, a heteroaryl group, a linear alkyl group, a branched alkyl group, an aryl ether group, an alkoxy group and a hydroxyl group, and among them, an aryl group and an aryl ether group are preferable.
- R 16 and R 17 are independently selected from the same group as R 1 to R 6.
- the pyromethene boron complex has a strong and highly planar skeleton, and therefore exhibits a high fluorescence quantum yield. Further, since the peak half width of the emission spectrum is small, efficient emission and high color purity can be achieved in the emission element. In order to further improve the luminous efficiency, it is effective to suppress the rotation / vibration of the substituent of the pyromethene boron complex, reduce the energy loss, and improve the fluorescence quantum yield. Further, in order to improve the color purity, it is effective to reduce the vibrational relaxation in the excited state of the pyrromethene boron complex and reduce the half width of the emission spectrum. From this point of view, in the structure represented by the general formula (2), it is preferable to use a structure in which X 1 is a carbon atom and the above-mentioned atom or monovalent group is bonded.
- a pyromethene boron complex having a high fluorescence quantum yield and a small half-value width can be provided. .. Furthermore, when the group bonded to the bridge head position suppresses intramolecular rotation with respect to the pyrromethene skeleton, it is possible to suppress energy deactivation, which is advantageous for improving luminous efficiency. In addition, the stability of the pyromethene boron complex affects the durability of the light emitting device. In order to further improve the stability, it is preferable to introduce a bulky substituent at the bridge head position. By introducing a bulky substituent, the pyrromethene skeleton can be protected from interaction with other surrounding molecules.
- X 1 is a carbon atom, as a particularly preferable monovalent group bonded to the carbon atom, the viewpoint represented by the following general formula (3) or general formula (4) can suppress energy deactivation. Is preferable.
- R 9 to R 11 are independently hydrogen atom, substituted or unsubstituted alkyl group, substituted or unsubstituted cycloalkyl group, substituted or unsubstituted heterocyclic group, substituted or unsubstituted alkenyl.
- R 12 to R 14 are independently hydrogen atom, substituted or unsubstituted alkyl group, substituted or unsubstituted cycloalkyl group, substituted or unsubstituted heterocyclic group, substituted or unsubstituted alkenyl.
- R 15 is a substituted or unsubstituted alkyl group, a substituted or unsubstituted cycloalkyl group, a substituted or unsubstituted heterocyclic group, a substituted or unsubstituted alkenyl group, a substituted or unsubstituted cycloalkenyl group, a substituted or unsubstituted Substituent alkynyl group, hydroxyl group, thiol group, substituted or unsubstituted alkoxy group, substituted or unsubstituted alkylthio group, substituted or unsubstituted aryloxy group, substituted or unsubstituted arylthio group, substituted or unsubstituted aryl group , Substituted or unsubstituted heteroaryl group, halogen atom, cyano group, formyl group, acyl group, carboxy group, substituted or unsubstituted alk
- Ar 1 is a group selected from the group consisting of substituted or unsubstituted aryl groups or substituted or unsubstituted heteroaryl groups. ) Further, when the group represented by the general formula (3) is contained, in the pyrometheneboron compound represented by the general formula (2), Z 1 and Z 2 are independently substituted or unsubstituted alkyl groups.
- R 1 and R 6 are independently substituted or unsubstituted aryl groups or substituted or unsubstituted heteroaryl groups (where these aryl groups and heteroaryl groups may be monocyclic or fused rings, respectively.
- R 1 and R 6 are monocyclic aryl groups and heteroaryl groups
- the monocyclic aryl groups and heteroaryl groups are one or more secondary alkyl groups and one or more.
- R 2 and R 5 are independently hydrogen atoms, substituted or unsubstituted alkyl groups, substituted or unsubstituted cycloalkyl groups, substituted or unsubstituted alkenyl groups, substituted or unsubstituted alkenyl groups, respectively.
- Z 1 and Z 2 are preferably an alkyl group, an alkoxy group, an aryl ether group, a halogen or a cyano group from the viewpoint of light emission characteristics and thermal stability. Further, from the viewpoint that the excited state is stable and a higher fluorescence quantum yield can be obtained, and the durability can be improved, Z 1 and Z 2 are more preferably electron-attracting groups, and more specifically. Is more preferably a fluorine atom, a fluorine-containing alkyl group, a fluorine-containing alkoxy group, a fluorine-containing aryl ether group or a cyano group, further preferably a fluorine atom or a cyano group, and most preferably a fluorine atom. preferable.
- R 1 and R 6 are groups that contribute to the stability and luminous efficiency of the pyrromethene boron complex compound. Stability refers to electrical and thermal stability. Electrical stability means that deterioration of the compound such as decomposition is unlikely to occur when the light emitting element is continuously energized. Thermal stability means that the deterioration of the compound is unlikely to occur due to heating processes such as sublimation purification and vapor deposition during manufacturing and the environmental temperature around the light emitting element. Since the luminous efficiency decreases when the compound is altered, the stability of the compound is important for improving the durability of the light emitting device.
- R 1 and R 6 are preferably substituted or unsubstituted aryl groups from the viewpoint of compound stability and luminous efficiency.
- R 1 and R 6 are preferably groups having a large steric hindrance in the above group in order to prevent aggregation of pyrromethene boron complexes and avoid concentration quenching.
- R 1 and R 6 are phenyl groups having one or more tertiary alkyl groups as substituents, phenyl groups having one or more aryl groups as substituents, and one or more heteroaryl groups. It has a total of two or more substituents, a phenyl group, a methyl group and a primary alkyl group, and at least one of them is substituted at the 2-position with respect to the bond site with the pyrrole ring.
- R 1 and R 6 are functional groups having a rigid structure or a highly symmetric structure. From this point of view, R 1 and R 6 are for a phenyl group having one or more tert-butyl groups as a substituent, a phenyl group having one or more phenyl groups as a substituent, or at least a bond site with a pyrrole ring.
- a phenyl group that is either a phenyl group in which a methyl group is substituted at the 2- or 6-position and has a substituent that is linearly symmetric with the bond with pyrrole as the axis of symmetry, or an unsubstituted fused ring-type aromatic. It is more preferably a hydrocarbon group. Further, from the viewpoint of ease of production, it may be a 2,6-dimethylphenyl group, a mesityl group, a 4-tert-butylphenyl group, a 3,5-ditert-butylphenyl group, a 4-biphenyl group or a 1-naphthyl group. More preferred.
- R 3 and R 4 are groups that contribute to the control of the emission wavelength.
- a method of extending the conjugation and lengthening the emission wavelength by directly bonding an aryl group or a heteroaryl group to the pyrromethene metal complex skeleton can be mentioned.
- R 3 and R 4 are substituted or unsubstituted alkyl groups, substituted or unsubstituted aryl groups or substituted or unsubstituted heteroaryl groups, but from the viewpoint of compound stability, they are substituted or unsubstituted.
- Aryl groups are more preferred.
- R 2 and R 5 mainly affect the peak wavelength, half width of emission spectrum, stability, or crystallinity. From the viewpoint of narrowing the half width of the emission spectrum, stability affecting device durability, and ease of manufacture including recrystallization purification, at least one or more preferably both of R 2 and R 5 are hydrogen atoms. Alternatively, it is preferably a substituted or unsubstituted alkyl group.
- a bond may be formed between the groups constituting the pair to form a ring, or a bond may be formed between Z 1 and Z 2 to form a ring. it may be one that is formed, but in place of this sense, in the R 1 to the R 6, condensed and pyrromethene ring, preferably as a fused ring, i.e.
- Z 1 and Z 2 include that a heterocycle containing boron can be provided as a partial structure.
- R 7 and R 8 are substituted or unsubstituted alkyl groups, substituted or unsubstituted aryl groups or substituted or unsubstituted heteroaryl groups. Is selected from. Of these, at least one is preferably a substituted or unsubstituted aryl group or a substituted or unsubstituted heteroaryl group.
- one of R 7 and R 8 is preferably a substituted or unsubstituted alkyl group, and more preferably a methyl group.
- R 9 to R 11 are used for adjusting the peak wavelength, crystallinity, sublimation temperature and the like. Particularly affecting peak wavelength substituents attached to the 4-position of the pyrromethene skeleton, that is, R 10. If R 10 is an electron donating group, the emission peak wavelength shifts to the short wavelength side.
- the electron donating group include a methyl group, an ethyl group, a tert-butyl group, a cyclohexyl group, a methoxy group, an ethoxy group, a phenyl group, a tolyl group, a naphthyl group, a furanyl group and a dibenzofuranyl group.
- R 10 is an alkoxy group such as a methoxy group or an ethoxy group having a strong electron donating property, the short wavelength shift is large, which is useful for wavelength adjustment.
- R 10 is an electron-attracting group, the emission peak shifts to the long wavelength side.
- the electron-attracting group examples include a fluorine atom, a trifluoromethyl group, a cyano group, a pyridyl group, and a pyrimidyl group.
- R 10 is a group selected from a fluorine atom, a trifluoromethyl group and a cyano group having strong electron attraction, the long wavelength shift is large, which is useful for wavelength adjustment.
- the electron donating group and the electron attracting group are not limited to these.
- Z 1 and Z 2 are independently substituted or unsubstituted alkyl groups, respectively. , substituted or unsubstituted alkoxy group, a substituted or unsubstituted aryloxy group, a substituted or unsubstituted aryl group, a halogen atom and atom or group selected from the group consisting of cyano group,
- R 1 ⁇ R 6 is , Independently, hydrogen atom, substituted or unsubstituted alkyl group, substituted or unsubstituted cycloalkyl group, substituted or unsubstituted alkenyl group, substituted or unsubstituted alkoxy group, substituted or unsubstituted alkylthio group, substituted or Consists of an unsubstituted aryloxy group, a substituted or unsubstituted ary
- Z 1 and Z 2 are preferably an alkyl group, an alkoxy group, an aryl ether group, a halogen or a cyano group from the viewpoint of light emission characteristics and thermal stability. Further, from the viewpoint that the excited state is stable and a higher fluorescence quantum yield can be obtained, and the durability can be improved, Z 1 and Z 2 are more preferably electron-attracting groups, and more specifically. Is more preferably a fluorine atom, a fluorine-containing alkyl group, a fluorine-containing alkoxy group, a fluorine-containing aryl ether group or a cyano group, further preferably a fluorine atom or a cyano group, and most preferably a fluorine atom. preferable.
- R 1 and R 6 affect the emission peak wavelength, crystallinity, sublimation temperature, etc. of the pyrromethene boron complex.
- R 1 and R 6 are preferably hydrogen atoms or alkyl groups.
- R 1 and R 6 are more preferably alkyl groups, and further preferably methyl groups from the viewpoint of ease of production.
- R 3 and R 4 mainly affect the emission peak wavelength, the half width of the emission spectrum, the stability, or the crystallinity of the pyrromethene boron complex.
- at least one or preferably both of R 3 and R 4 are hydrogen atoms. It is preferably a group selected from the group consisting of substituted or unsubstituted alkyl groups, substituted or unsubstituted aryl groups and substituted or unsubstituted heteroaryl groups.
- R 3 and R 4 are more preferably alkyl groups, and further preferably methyl groups from the viewpoint of ease of production.
- R 2 and R 5 mainly affect the emission peak wavelength, the half width of the emission spectrum, the stability, or the crystallinity of the pyrromethene boron complex. From the viewpoint of reducing the half width of the emission spectrum, improving the stability, and easiness of synthesis including recrystallization purification, at least one or preferably both of R 2 and R 5 are hydrogen atoms. It is preferably a substituted or unsubstituted alkyl group, and it is more preferable that both are hydrogen atoms from the viewpoint of ease of production.
- R 11 and Ar 1 are a substituted or unsubstituted aryl group or a substituted or unsubstituted heteroaryl group.
- it is more preferably a 1-naphthyl group.
- an aryl group or a heteroaryl group into the pyrromethene skeleton for example, under a metal catalyst such as palladium, carbon-is used by a coupling reaction between a halogenated derivative of the pyrromethene boron complex and a boronic acid or boronic acid ester derivative. Examples include, but are not limited to, methods of forming carbon bonds.
- a metal catalyst such as palladium
- carbon-nitrogen using a coupling reaction of a halogenated derivative of the pyrromethene boron complex with an amine or carbazole derivative. Examples include, but are not limited to, methods of generating bonds.
- the obtained pyromethene boron complex is subjected to organic synthetic purification such as recrystallization and column chromatography, and then the low boiling point component is removed by purification by heating under reduced pressure, which is generally called sublimation purification, to improve the purity. Is preferable.
- the heating temperature in the sublimation purification is not particularly limited, but is preferably 330 ° C. or lower, more preferably 300 ° C. or lower, from the viewpoint of preventing thermal decomposition of the pyromethene boron complex.
- the purity of the pyrromethene boron complex produced in this manner is preferably 99% by weight or more from the viewpoint of enabling the light emitting device to exhibit stable characteristics.
- the optical properties of the pyrromethene boron complex can be obtained by measuring the absorption spectrum and emission spectrum of the diluted solution.
- the solvent is not particularly limited as long as it dissolves the pyrromethene boron complex and the absorption spectrum of the solvent is transparent so as not to overlap with the absorption spectrum of the pyromethene boron complex.
- toluene and the like are exemplified.
- the concentration of the solution is not particularly limited as long as it has sufficient absorbance and does not cause concentration dimming, but it is preferably in the range of 1 ⁇ 10 -4 mol / L to 1 ⁇ 10 -7 mol / L. More preferably, it is in the range of 1 ⁇ 10 -5 mol / L to 1 ⁇ 10 -6 mol / L.
- the absorption spectrum can be measured with a general ultraviolet-visible spectrophotometer.
- the emission spectrum can be measured by a general fluorescence spectrophotometer.
- the emission spectrum of the light emitted by the pyromethene boron complex by irradiation with excitation light is sharp.
- the half width of the emission spectrum is preferably 60 nm or less, more preferably 50 nm or less, further preferably 45 nm or less, and particularly preferably 28 nm or less.
- the luminous efficiency of the light emitting element depends on the fluorescence quantum yield of the light emitting material itself. Therefore, it is desired that the fluorescence quantum yield of the light emitting material is as close to 100% as possible.
- the pyromethene boron complex represented by the general formula (2) can obtain a high fluorescence quantum yield by suppressing rotation and vibration at the bridge head position and reducing heat deactivation. From the above viewpoint, the fluorescence quantum yield of the pyrromethene boron complex is preferably 90% or more, more preferably 95% or more. However, the fluorescence quantum yield shown here is obtained by measuring a diluted solution using toluene as a solvent with an absolute quantum yield measuring device.
- the light emitting layer further has a singlet energy (meaning the energy difference between the lowest excited singlet state and the ground state; the same applies hereinafter) of the first compound.
- a singlet energy meaning the energy difference between the lowest excited singlet state and the ground state; the same applies hereinafter
- Compounds larger than the singlet energy may be referred to as "third compounds" may be included.
- the third compound can have a function of confining the energy of the light emitting material in the light emitting layer, and can efficiently emit light.
- the lowest excited triplet energy of the third compound referred to as the energy difference between the lowest excited triplet state and the ground state; the same applies hereinafter
- an organic compound having a high charge transporting ability and a high glass transition temperature is preferable.
- the third compound may be composed of a single compound or two or more kinds of materials.
- the third compound has an electron transporting property and the third compound has a hole transporting property.
- the first compound and the third compound satisfy the relational expressions of the following formulas 1 to 4, respectively. Further, it is more preferable to satisfy the formulas 1 and 2, and it is further preferable to satisfy the formulas 3 and 4. Further, it is more preferable to satisfy all of the formulas 1 to 4.
- S1 represents the energy level of the lowest excited singlet state of each compound
- T1 represents the energy level of the lowest excited triplet state of each compound.
- Examples of the third electron-transporting compound include compounds containing a ⁇ -electron-deficient heteroaromatic ring. Specific examples thereof include a heterocyclic compound having a polyazole skeleton, a heterocyclic compound having a quinoxaline skeleton or a dibenzoquinoxaline skeleton, a heterocyclic compound having a diazine skeleton (pyrimidine skeleton or pyrazine skeleton), and a heterocyclic compound having a pyridine skeleton. ..
- a compound containing a ⁇ -electron excess type heteroaromatic ring and the like can be mentioned. Specifically, a compound having a carbazole skeleton is exemplified.
- the method for forming each of the above-mentioned layers constituting the light emitting device of the present invention may be either a dry process or a wet process, and resistance heating vapor deposition, electron beam vapor deposition, sputtering, molecular lamination method, coating method, inkjet method, printing may be used.
- resistance heating vapor deposition is usually preferable from the viewpoint of device characteristics.
- the thickness of the organic layer is not particularly limited because it depends on the resistance value of the luminescent substance, but it is preferably 1 to 1000 nm.
- the film thicknesses of the light emitting layer, the electron transport layer, and the hole transport layer are preferably 1 nm or more and 200 nm or less, and more preferably 5 nm or more and 100 nm or less, respectively.
- NMR Nuclear Magnetic Resonance Analysis
- the 400 MHz NMR spectrum of the white solid obtained in Synthesis Example 2 was measured using a JNM-AL400 type nuclear magnetic resonance apparatus (manufactured by JEOL Ltd.). The chemical shift is expressed in ⁇ (unit: ppm) with reference to tetramethylsilane, and the signals are s (single line), d (double line), t (triple line), q (quadruple line), and m, respectively. It was represented by (multiple lines), br (wide), dd (double double lines), and dt (double triple lines).
- the solvent name shown in the NMR data indicates the solvent used for the measurement.
- X-ray source CuK ⁇ ray * Curved crystal monochromator (graphite) is used
- Output 40kV / 50mA
- Divergence slit 1/2 °
- Divergence vertical restriction slit 5 mm
- Scattering slit 1/2 °
- Light receiving slit 0.15 mm
- Detector Scintillation counter Scan method: 2 ⁇ / ⁇ scan, continuous scan Measurement range (2 ⁇ ): 2 to 30 ° Scan speed (2 ⁇ ): 20 ° / min Counting step (2 ⁇ ): 0.04 °.
- Residual solvent amount The white solid obtained in each Example and Comparative Example was subjected to NMR measurement, and the molar ratio was calculated from the respective peak integrated values of the compound to be measured and the residual solvent, and compared with each Example. The amount of residual solvent was calculated from the weight and molar ratio of the white solid obtained by the example. When a plurality of residual solvents were confirmed, they were calculated as the total value.
- the obtained concentrate was suspended in a mixed solution of dichloromethane / chloroform (volume ratio 1/10, 85 mL) and stirred at 0 ° C.
- the precipitate was filtered and dried under reduced pressure at 100 ° C. to obtain 3.25 g of 1,3-bis (9-phenyl-1,10-phenanthroline-2-yl) benzene as a white solid.
- the NMR chemical shift of the obtained compound is shown below. 1H-NMR (CDCl 3 , ppm): 9.75 (s, 1H), 8.72 (dd, 2H), 8.57-8.17 (m, 12H), 7.90-7.82 (m) , 5H), 7.61-7.48 (m, 6H).
- the precipitate was filtered and dried under reduced pressure at 20 ° C., tetrahydrofuran (16.7 mL, specific density 0.89) was added to the obtained precipitate, and the mixture was heated under reflux and stirred for 2 hours. Subsequently, the mixture was cooled to 0 ° C. over 1 hour and then stirred at 0 ° C. for 1 hour. The precipitate was filtered and dried under reduced pressure at 100 ° C. to obtain a white solid (yield 0.71 g, recovery rate 55%).
- the precipitate was filtered and dried under reduced pressure at 100 ° C., tetrahydrofuran (7.7 mL, specific gravity 0.89) was added to the obtained precipitate, and the mixture was heated under reflux and stirred for 2 hours. Subsequently, the mixture was cooled to 0 ° C. over 3 hours and then stirred at 0 ° C. for 2 hours. The precipitate was filtered and dried under reduced pressure at 100 ° C. to obtain a white solid (yield 0.70 g, recovery rate 72%).
- N-methylpyrrolidone (1.1 mL, specific density 1) was added to 1,3-bis (9-phenyl-1,10-phenanthroline-2-yl) benzene (0.30 g) obtained in Synthesis Example 2 under an argon atmosphere. .03) and anisole (2.1 mL, specific density 0.99) were added, and the mixture was stirred at 100 ° C. for 0.5 hours. Subsequently, the mixture was cooled to 0 ° C. over 1 hour and then stirred at 0 ° C. for 2 hours. The precipitate was filtered and dried under reduced pressure at 100 ° C. to obtain a white solid (yield 0.23 g, recovery rate 77%).
- the phenanthroline derivative synthesized by the conventional method and the phenanthroline derivative washed with a methanol solvent are amorphous and have a small amount of residual solvent, but have low chemical purity.
- the D-type crystal of Comparative Example 1 has a high chemical purity but a large amount of residual solvent. Therefore, in order to obtain a phenanthroline derivative having a high chemical purity and a small amount of residual solvent, only the amorphous crystal is crystallized. Was insufficient, and it was found that it was necessary to select B-type crystals or C-type crystals with a small amount of residual solvent.
- Example 6 since the crystal polymorphic transition easily proceeds in the E-type crystal under the conditions of drying under reduced pressure at 100 ° C., the E-type crystal is useful as a precursor for obtaining the C-type crystal by low-temperature drying. I understood.
- the pyrromethene boron complex compound used in the following Examples and Comparative Examples is the compound shown below. The characteristics are shown in Table 3.
- Example 7 A glass substrate (manufactured by Geomatec Co., Ltd., 11 ⁇ / ⁇ , sputtered product) on which an ITO transparent conductive film was deposited at 165 nm was cut into a size of 38 ⁇ 46 mm and etched. The obtained substrate was ultrasonically cleaned with "Semicoclean 56" (trade name, manufactured by Furuuchi Chemical Co., Ltd.) for 15 minutes, and then washed with ultrapure water. This substrate was subjected to ultraviolet-ozone treatment for 1 hour immediately before the device was manufactured, placed in a vacuum vapor deposition apparatus, and evacuated until the degree of vacuum in the apparatus became 5 ⁇ 10 -4 Pa or less.
- HAT-CN6 was first deposited at 10 nm as a hole injection layer, and HT-1 was deposited at 180 nm as a hole transport layer.
- H-1 which is a host material
- compound D-1 which is a dopant compound
- compound H-2 which is a TADF material
- a crystal (C-type crystal) of compound ET-1 which is a phenanthroline derivative
- 2E-1 after depositing 2E-1 at 0.5 nm as an electron injection layer, magnesium and silver were co-deposited at 1000 nm to form a cathode, and a 5 ⁇ 5 mm square element was manufactured.
- the external quantum efficiency was 11.4% when this light emitting device was made to emit light at 1000 cd / m 2.
- the structures of HAT-CN6, HT-1, H-1, H-2, ET-1, and 2E-1 are shown below.
- Example 8 A light emitting device was used in the same manner as in Example 7 except that the crystals in the crystal form shown in Table 1 were used as the crystal form of the phenanthroline derivative ET-1 and the compounds shown in Table 3 were used as the dopant material for the light emitting layer. Made and evaluated. The results are shown in Table 4.
- Example 11 A glass substrate (manufactured by Geomatec Co., Ltd., 11 ⁇ / ⁇ , sputtered product) on which an ITO transparent conductive film was deposited at 165 nm was cut into a size of 38 ⁇ 46 mm and etched. The obtained substrate was ultrasonically cleaned with "Semicoclean 56" (trade name, manufactured by Furuuchi Chemical Co., Ltd.) for 15 minutes, and then washed with ultrapure water. This substrate was subjected to ultraviolet-ozone treatment for 1 hour immediately before the device was manufactured, placed in a vacuum vapor deposition apparatus, and evacuated until the degree of vacuum in the apparatus became 5 ⁇ 10 -4 Pa or less.
- HAT-CN6 was first deposited at 10 nm as a hole injection layer, and HT-1 was deposited at 40 nm as a hole transport layer.
- H-1 which is a host material
- compound D-6 which is a dopant compound
- compound H-3 which is a TADF material
- a crystal (C-type crystal) of the compound ET-1 which is a phenanthroline derivative was used, and thin-film deposition was laminated to a thickness of 50 nm.
- magnesium and silver were co-deposited at 1000 nm to form a cathode, and a 5 ⁇ 5 mm square element was manufactured.
- the external quantum efficiency was 9.2% when this light emitting device was made to emit light at 1000 cd / m 2.
- the structure of H-3 is shown below.
- Example 12 to 14 A light emitting device in the same manner as in Example 11 except that the crystals in the crystal form shown in Table 1 were used as the crystal form of the phenanthroline derivative ET-1 and the compounds shown in Table 3 were used as the dopant material for the light emitting layer. Was prepared and evaluated. The results are shown in Table 4.
- Examples 7-14 have higher external quantum efficiencies than Comparative Examples 4 to 7 using the same light emitting layer. That is, as can be seen with reference to Table 4, in Examples 7 to 14 in which the B-type crystal or C-type crystal of the compound ET-1 is used as the electron transport material, the D form of the compound ET-1 is used as the electron transport material. Compared with Comparative Examples 4 to 7 in which crystalline or amorphous materials are used, it is possible to obtain a light emitting element in which the external quantum efficiency is significantly improved regardless of which thermally activated delayed fluorescent material is used for the light emitting layer. all right.
- Example 15 A glass substrate (manufactured by Geomatec Co., Ltd., 11 ⁇ / ⁇ , sputtered product) on which an ITO transparent conductive film was deposited at 165 nm was cut into a size of 38 ⁇ 46 mm and etched. The obtained substrate was ultrasonically cleaned with "Semicoclean 56" (trade name, manufactured by Furuuchi Chemical Co., Ltd.) for 15 minutes, and then washed with ultrapure water. This substrate was subjected to ultraviolet-ozone treatment for 1 hour immediately before the device was manufactured, placed in a vacuum vapor deposition apparatus, and evacuated until the degree of vacuum in the apparatus became 5 ⁇ 10 -4 Pa or less.
- HAT-CN6 was first deposited at 10 nm as a hole injection layer, and HT-1 was deposited at 180 nm as a hole transport layer.
- H-1 which is a host material
- compound D-1 which is a dopant compound
- compound H-2 which is a TADF material
- the electron transport layer compound ET-2 is used as the electron transport material and 2E-1 is used as the donor material, and the vapor deposition rate ratio of the compounds ET-2 and 2E-1 is 1: 1 so that the thickness is 35 nm. It was laminated on the surface.
- a crystal (C-type crystal) of the compound ET-1 which is a phenanthroline derivative is used as the electron injection layer, metallic lithium is used as the donor material, and the vapor deposition rate ratio of the compound ET-1 and the metallic lithium is 99: 1.
- magnesium and silver were co-deposited at 1000 nm to form a cathode, and a 5 ⁇ 5 mm square element was manufactured.
- the external quantum efficiency was 14.4% when this light emitting device was made to emit light at 1000 cd / m 2.
- the structure of ET-2 is shown below.
- Example 16 to 18 The light emitting device was prepared in the same manner as in Example 15 except that the crystals in the crystal form shown in Table 1 were used as the crystal form of the phenanthroline derivative ET-1 and the compounds shown in Table 3 were used as the dopant material for the light emitting layer. Made and evaluated. The results are shown in Table 5.
- Example 19 A glass substrate (manufactured by Geomatec Co., Ltd., 11 ⁇ / ⁇ , sputtered product) on which an ITO transparent conductive film was deposited at 165 nm was cut into a size of 38 ⁇ 46 mm and etched. The obtained substrate was ultrasonically cleaned with "Semicoclean 56" (trade name, manufactured by Furuuchi Chemical Co., Ltd.) for 15 minutes, and then washed with ultrapure water. This substrate was subjected to ultraviolet-ozone treatment for 1 hour immediately before the device was manufactured, placed in a vacuum vapor deposition apparatus, and evacuated until the degree of vacuum in the apparatus became 5 ⁇ 10 -4 Pa or less.
- HAT-CN6 was first deposited at 10 nm as a hole injection layer, and HT-1 was deposited at 40 nm as a hole transport layer.
- H-1 which is a host material
- compound D-6 which is a dopant compound
- compound H-3 which is a TADF material
- the electron transport layer compound ET-2 is used as the electron transport material and 2E-1 is used as the donor material, and the vapor deposition rate ratio of the compounds ET-2 and 2E-1 is 1: 1 so that the thickness is 50 nm. It was laminated on the surface.
- a crystal (C-type crystal) of ET-1 which is a phenanthroline derivative is used as an electron injection layer, and metallic lithium is used as a donor material, and the vapor deposition rate ratio of compound ET-1 and metallic lithium becomes 99: 1.
- magnesium and silver were co-deposited with 1000 nm to form a cathode, and a 5 ⁇ 5 mm square element was produced.
- the external quantum efficiency was 12.2% when this light emitting device was made to emit light at 1000 cd / m 2.
- Example 20 to 22 A light emitting device in the same manner as in Example 19 except that the crystals in the crystal form shown in Table 1 were used as the crystal form of the phenanthroline derivative ET-1 and the compounds shown in Table 3 were used as the dopant material for the light emitting layer. Was prepared and evaluated. The results are shown in Table 5.
- Examples 15 to 22 have higher external quantum efficiencies than Comparative Examples 8 to 9 using the same light emitting layer. That is, as can be seen with reference to Table 5, in Examples 15 to 22 in which the B-type crystal or C-type crystal of the compound ET-1 is used as the electron-injected material, the D-type of the compound ET-1 is used as the electron-injected material. Compared with Comparative Examples 8 to 11 in which crystalline or amorphous materials are used, it is possible to obtain a light emitting element in which the external quantum efficiency is significantly improved regardless of which thermally activated delayed fluorescent material is used for the light emitting layer. all right.
- Example 23 A glass substrate (manufactured by Geomatec Co., Ltd., 11 ⁇ / ⁇ , sputtered product) on which an ITO transparent conductive film was deposited at 165 nm was cut into a size of 38 ⁇ 46 mm and etched. The obtained substrate was ultrasonically cleaned with "Semicoclean 56" (trade name, manufactured by Furuuchi Chemical Co., Ltd.) for 15 minutes, and then washed with ultrapure water. This substrate was subjected to ultraviolet-ozone treatment for 1 hour immediately before the device was manufactured, placed in a vacuum vapor deposition apparatus, and evacuated until the degree of vacuum in the apparatus became 5 ⁇ 10 -4 Pa or less.
- HAT-CN6 was first deposited at 5 nm as a hole injection layer, and then HT-1 was deposited at 50 nm as a hole transport layer.
- H-1 which is a host material compound D-1 which is a dopant compound, and compound H-2 which is a TADF material are arranged in a weight ratio of 80: 1: 19. , 20 nm thick vapor deposition.
- compound ET-2 is used as the electron transport material and 2E-1 is used as the donor material, and the vapor deposition rate ratio of the compounds ET-2 and 2E-1 is 1: 1 so that the thickness is 35 nm. It was laminated on the surface.
- a phenanthroline derivative ET-1 crystal (C-type crystal: Example 6) was used as the n-type charge generation layer for the n-type host, metallic lithium was used for the n-type dopant, and the compound ET-1 and metallic lithium were used.
- the layers were laminated at 10 nm so that the vapor deposition rate ratio was 99: 1.
- HAT-CN6 was laminated at 10 nm as a p-type charge light emitting layer.
- a hole transport layer of 50 nm, a light emitting layer of 20 nm, and an electron transport layer of 35 nm were deposited on the hole in this order in the same manner as described above.
- magnesium and silver were co-deposited at 1000 nm to serve as a cathode, and a 5 ⁇ 5 mm square tandem fluorescent light emitting element was produced.
- the external quantum efficiency when this light emitting device was made to emit light at 1000 cd / m 2 was 16.2%. It was confirmed that the external quantum efficiency was improved as compared with Example 15 in which the light emitting layer was only one layer.
- Example 24 A glass substrate (manufactured by Geomatec Co., Ltd., 11 ⁇ / ⁇ , sputtered product) on which an ITO transparent conductive film was deposited at 165 nm was cut into a size of 38 ⁇ 46 mm and etched. The obtained substrate was ultrasonically cleaned with "Semicoclean 56" (trade name, manufactured by Furuuchi Chemical Co., Ltd.) for 15 minutes, and then washed with ultrapure water. This substrate was subjected to ultraviolet-ozone treatment for 1 hour immediately before the device was manufactured, placed in a vacuum vapor deposition apparatus, and evacuated until the degree of vacuum in the apparatus became 5 ⁇ 10 -4 Pa or less.
- "Semicoclean 56" trade name, manufactured by Furuuchi Chemical Co., Ltd.
- HAT-CN6 was first deposited at 5 nm as a hole injection layer, and then HT-1 was deposited at 50 nm as a hole transport layer.
- H-1 which is a host material
- compound D-6 which is a dopant material
- compound H-3 which is a TADF material are arranged in a weight ratio of 80: 1: 19. , 30 nm thick vapor deposition.
- n-type charge generation layer a crystal of ET-1 which is a phenanthroline derivative which is an n-type host (C-type crystal: Example 6) and metallic lithium, which is an n-type dopant, were laminated at 10 nm so that the vapor deposition rate ratio was 99: 1. Further, HAT-CN6 was laminated at 10 nm as a p-type charge generation layer. Similarly to the above, a hole transport layer of 50 nm, a light emitting layer of 30 nm, and ET-1 (C-type crystal) of 35 nm as an electron transport layer were deposited in this order.
- the external quantum efficiency was 11.3% when this light emitting device was made to emit light at 1000 cd / m 2. It was confirmed that the external quantum efficiency was improved as compared with Example 11 in which the light emitting layer was only one layer.
- the crystal of the phenanthroline derivative of the present invention exhibits extremely high chemical purity as compared with the phenanthroline derivative obtained by the conventional method, and since the amount of residual solvent is small, bumping in sublimation purification can be suppressed, which is suitable for industrial production. Is also available. Further, since the phenanthroline derivative obtained by sublimating and purifying the crystal of the phenanthroline derivative of the present invention has high chemical purity, it has a display element, a flat panel display, a backlight, lighting, an interior, a sign, a signboard, an electronic camera, and an optical signal generator. It can be suitably used as a light emitting element material used in such fields.
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Abstract
Le but de la présente invention est de fournir : un cristal d'un dérivé de phénanthroline, ledit cristal ayant une pureté chimique élevée et une faible teneur en solvant résiduel, ce qui est approprié pour une utilisation en tant que matériau d'élément électroluminescent ; et un procédé de production de ce cristal de dérivé de phénanthroline. La présente invention concerne : un cristal d'un dérivé de phénanthroline, ledit cristal ayant une structure représentée par la formule générale (1), tout en ayant respectivement des pics à des angles de diffraction 2θ (°) de 6,7 ± 0,2, 8,2 ± 0,2, 13,7 ± 0,2, 17,7 ± 0,2 et 22,2 ± 0,2 dans le motif de diffraction de rayons X sur poudre (ledit cristal étant appelé cristal de forme B) ; et un cristal d'un dérivé de phénanthroline, ledit cristal ayant une structure représentée par la formule générale (1), tout en ayant respectivement des pics à des angles de diffraction 2θ (°) de 5,0 ± 0,2, 7,5 ± 0,2, 8,7 ± 0,2, 12,5 ± 0,2 et 17,3 ± 0,2 dans le motif de diffraction de rayons X sur poudre (ledit cristal étant appelé cristal de forme C. De plus, la présente invention concerne un cristal d'un dérivé de phénanthroline, ledit cristal ayant une structure représentée par la formule générale (1), tout en ayant respectivement des pics à des angles de diffraction 2θ (°) de 5,2 ± 0,2, 7,0 ± 0,2, 16,4 ± 0,2, 20,0 ± 0,2 et 23,6 ± 0,2 dans le motif de diffraction de rayons X sur poudre, ledit cristal étant approprié pour la réalisation d'un cristal de forme C. (Dans la formule, X représente un groupe phénylène ou un groupe naphtylène.)
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JP2021517490A JPWO2021193818A1 (fr) | 2020-03-26 | 2021-03-25 | |
CN202180023209.8A CN115335385A (zh) | 2020-03-26 | 2021-03-25 | 菲咯啉衍生物的结晶及其制造方法以及使用其的发光元件 |
KR1020227031056A KR20220157948A (ko) | 2020-03-26 | 2021-03-25 | 페난트롤린 유도체의 결정 및 그 제조 방법, 그리고 그것을 사용한 발광 소자 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN114195809A (zh) * | 2021-12-27 | 2022-03-18 | 中国科学院长春应用化学研究所 | 一种硼杂或磷杂稠环化合物及其制备方法和应用 |
WO2023190159A1 (fr) * | 2022-04-01 | 2023-10-05 | 東レ株式会社 | Composé, matériau d'élément électroluminescent et élément électroluminescent obtenu à l'aide de celui-ci, matériau d'élément de conversion photoélectrique, composition de conversion de couleur, feuille de conversion de couleur, unité de source de lumière, dispositif d'affichage et dispositif d'éclairage |
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- 2021-03-25 KR KR1020227031056A patent/KR20220157948A/ko unknown
- 2021-03-25 CN CN202180023209.8A patent/CN115335385A/zh active Pending
- 2021-03-25 JP JP2021517490A patent/JPWO2021193818A1/ja active Pending
- 2021-03-25 WO PCT/JP2021/012518 patent/WO2021193818A1/fr active Application Filing
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JP2004281390A (ja) * | 2003-02-25 | 2004-10-07 | Toray Ind Inc | 発光素子用材料、及びこれを含む発光素子 |
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WO2023190159A1 (fr) * | 2022-04-01 | 2023-10-05 | 東レ株式会社 | Composé, matériau d'élément électroluminescent et élément électroluminescent obtenu à l'aide de celui-ci, matériau d'élément de conversion photoélectrique, composition de conversion de couleur, feuille de conversion de couleur, unité de source de lumière, dispositif d'affichage et dispositif d'éclairage |
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CN115335385A (zh) | 2022-11-11 |
JPWO2021193818A1 (fr) | 2021-09-30 |
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