WO2021192245A1 - Structure de module de dissipation thermique élevée - Google Patents

Structure de module de dissipation thermique élevée Download PDF

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Publication number
WO2021192245A1
WO2021192245A1 PCT/JP2020/014109 JP2020014109W WO2021192245A1 WO 2021192245 A1 WO2021192245 A1 WO 2021192245A1 JP 2020014109 W JP2020014109 W JP 2020014109W WO 2021192245 A1 WO2021192245 A1 WO 2021192245A1
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WO
WIPO (PCT)
Prior art keywords
layer
core layer
opening
heat dissipation
metal core
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Application number
PCT/JP2020/014109
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English (en)
Japanese (ja)
Inventor
横田英樹
Original Assignee
太陽誘電株式会社
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Filing date
Publication date
Application filed by 太陽誘電株式会社 filed Critical 太陽誘電株式会社
Priority to PCT/JP2020/014109 priority Critical patent/WO2021192245A1/fr
Publication of WO2021192245A1 publication Critical patent/WO2021192245A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks

Definitions

  • the present invention relates to a high heat dissipation module structure.
  • Patent Documents 1 and 2 In order to increase the mounting density of electronic components, it is known that not only the electronic components are mounted on the surface of the substrate but also the modular structure in which the electronic components are embedded in the substrate (for example, Patent Documents 1 and 2).
  • the characteristics of the semiconductor component may fluctuate due to the stress applied to the semiconductor component when the heat sink is mounted on the semiconductor component in the module assembly process or during use after modularization.
  • the present invention has been made in view of the above problems, and an object of the present invention is to improve heat dissipation from a semiconductor component and reduce stress applied to the semiconductor component.
  • the present invention includes a metal core layer having a first opening, a semiconductor component provided in the first opening, and a heat radiating member joined to at least a part of the upper surface of the metal core layer and the upper surface of the semiconductor component.
  • the first insulating layer provided under the metal core layer, the first metal layer provided on the lower surface of the first insulating layer, and the metal core layer and the first metal layer provided in the first insulating layer. It is a high heat dissipation module structure including a first wiring for connecting one metal layer.
  • the heat radiating member may be joined to at least a part of the upper surface of the metal core layer surrounding the first opening.
  • the first opening has a substantially quadrangular shape
  • the heat radiating member is joined to an outer region of at least two opposite sides of the first opening on the upper surface of the metal core layer. be able to.
  • the electronic component provided in the second opening of the metal core layer may be provided, and the heat radiating member may not be provided above the electronic component.
  • the electronic component provided in the second opening of the metal core layer may be provided, and the heat radiating member may be provided above the electronic component and not joined to the upper surface of the electronic component. can.
  • the heat radiating member is joined to the upper surface of the metal core layer with at least a part of the first region surrounding the first opening and the second region on the opposite side of the semiconductor component with the electronic component interposed therebetween.
  • the electronic component provided in the second opening of the metal core layer is provided, and the heat radiating member includes at least a part of the first region of the upper surface of the metal core layer surrounding the first opening and the metal.
  • the structure is such that at least a part of the second region surrounding the second opening of the upper surface of the core layer is joined to the upper surface of the electronic component, and the first region and the second region are not connected. Can be done.
  • a second insulating layer provided on the metal core layer, surrounding the heat radiating member, and exposing the upper surface of the heat radiating member can be provided.
  • a plurality of the semiconductor components may be provided in the first opening, and the heat radiating member may be joined to the upper surface of the plurality of semiconductor components.
  • the present invention it is possible to improve the heat dissipation from the semiconductor component and reduce the stress applied to the semiconductor component.
  • 1 (a) and 1 (b) are a cross-sectional view and a plan view of the high heat dissipation module structure according to the first embodiment.
  • 2 (a) and 2 (b) are cross-sectional views of the module structure according to Comparative Example 1.
  • 3 (a) and 3 (b) are cross-sectional views of the high heat dissipation module structure according to the first embodiment.
  • 4 (a) to 4 (d) are plan views showing the heat radiating plate and the bonding layer in the first embodiment.
  • 5 (a) and 5 (b) are a cross-sectional view and a plan view of the high heat dissipation module structure according to the first modification of the first embodiment.
  • 6 (a) and 6 (b) are a cross-sectional view and a plan view of the high heat dissipation module structure according to the second modification of the first embodiment.
  • 7 (a) to 7 (c) are plan views showing the heat radiating plate and the bonding layer in the modified example 3 of the first embodiment.
  • FIG. 1 (a) and 1 (b) are a cross-sectional view and a plan view of the high heat dissipation module structure according to the first embodiment.
  • FIG. 1B mainly illustrates the core layer 10 (cross-hatching), the heat sink 36 (dotted line), the bonding layer 38 (broken line), the semiconductor component 40, the electronic components 42 and 44, and the like.
  • the outer circumference of the heat sink 36 and the outer circumference of the joint layer 38 are substantially the same, but in FIG. 1 (b), the outer circumference of the heat sink 36 and the outer circumference of the joint layer 38 are for easy viewing. Is shown separately.
  • the outer circumference of the joint layer 38 may be located inside or outside the heat sink 36.
  • FIG. 1A corresponds to the AA cross section of FIG. 1B.
  • the core layer 10 has openings 12, 13 and 14.
  • the semiconductor component 40 is provided in the opening 12 (first opening).
  • the semiconductor component 40 has an electrode 41 on the lower surface (front surface).
  • An electronic component 42 is provided in the opening 13 (second opening).
  • the electronic component 42 has an electrode 43 on the lower surface.
  • An electronic component 44 is provided in the opening 14.
  • the electronic component 44 has an electrode 45.
  • An insulating layer 20 is provided in the openings 12 to 14 so as to seal the semiconductor component 40 and the electronic components 42 and 44.
  • An insulating layer 22 is provided under the insulating layer 20 and the core layer 10. Vias 31 (via plugs) that penetrate the insulating layer 22 and connect to the electrodes 41, 43, 45 and the core layer 10 are provided.
  • a metal layer 32 connected to the via 31 is provided under the insulating layer 22.
  • An insulating layer 24 is provided under the insulating layer 22 so as to cover the metal layer 32.
  • the insulating layers 22 and 24 form an insulating layer 23 (first insulating layer).
  • a via 33 is provided that penetrates the insulating layer 24 and connects to the metal layer 32.
  • a metal layer 34 connected to the via 33 is provided under the insulating layer 24.
  • a solder resist 26 that covers the metal layer 34 is provided under the insulating layer 24.
  • a part of the metal layer 34 is exposed to the opening 27 of the solder resist 26.
  • the metal layer 34 exposed to the opening 27 functions as a terminal for connecting the high heat dissipation module structure to the outside such as a mounting board.
  • the metal layer 34a first metal layer
  • the metal layer 34b second metal layer
  • the electrode 41 of the semiconductor component 40 via the wiring 35b (second wiring) including the via 33, the metal layer 32, and the via 31.
  • a heat radiating plate 36 (heat radiating member) is bonded to the upper surface of the semiconductor component 40 and the upper surface of the core layer 10 around the opening 12 via a bonding layer 38.
  • An insulating layer 28 (second insulating layer) is provided on the core layer 10, the electronic components 42, and 44 so as to surround the heat radiating plate 36. The upper surface of the heat radiating plate 36 is exposed from the insulating layer 28.
  • the core layer 10 is, for example, a metal core layer made of a metal material whose main material is copper, a metal material whose main component is iron, or a metal material whose main material is aluminum.
  • the insulating layers 20, 22, 24 and 28 are, for example, synthetic resins, such as epoxy resins, bismaleimide triazine resins or polyimide resins.
  • the insulating layers 20, 22, 24 and 28 may be a synthetic resin mixed with an inorganic filler such as silica.
  • the metal layers 32 and 34 are layers mainly made of, for example, copper, gold or silver, and may include a barrier layer such as titanium, nickel, chromium and titanium nitride and an adhesion layer as the base layer of the metal layers 32 and 34. good.
  • the vias 31 and 33 are layers mainly made of, for example, copper, gold or silver.
  • the solder resist 26 is a synthetic resin such as an epoxy resin.
  • the thickness of the core layer 10 is, for example, 340 ⁇ m, for example, 30 ⁇ m to 1000 ⁇ m.
  • the thickness of the insulating layer 22 is, for example, 20 ⁇ m, for example, 10 ⁇ m to 100 ⁇ m, respectively.
  • the thickness of the insulating layer 24 is, for example, 30 ⁇ m, for example, 5 ⁇ m to 100 ⁇ m, respectively.
  • the thickness of the metal layers 32 and 34 is, for example, 12 ⁇ m, for example 5 ⁇ m to 100 ⁇ m.
  • the thickness of the solder resist 26 is, for example, 25 ⁇ m, for example, 5 ⁇ m to 100 ⁇ m.
  • the semiconductor component 40 includes, for example, a power transistor 48 such as an IGBT (Insulated Gate Bipolar Transistor), a bipolar transistor, or a FET (Field Effect Transistor).
  • a semiconductor material such as Si, GaN or SiC is used for the transistor.
  • the semiconductor component 40 is, for example, a bare chip or a package in which a bare chip is sealed and mounted.
  • the package on which the bare chip is mounted is a package such as WLP (Wafer Level Package).
  • the semiconductor component 40 is a bare chip of a horizontal transistor such as a GaN FET.
  • the thickness of the semiconductor component 40 is, for example, 10 ⁇ m to several hundred ⁇ m.
  • the thickness of the semiconductor component 40 is, for example, less than or equal to the thickness of the core layer 10.
  • the electronic component 42 is, for example, an integrated circuit having a silicon substrate, and controls a transistor provided in the semiconductor component 40.
  • the electronic component 42 is, for example, a bare chip or a package in which a bare chip is sealed and mounted.
  • the electronic component 44 is a discrete passive component such as a chip capacitor, a chip inductor or a chip resistor.
  • the electronic component 44 has external electrodes 45 at both ends.
  • the electrodes 41, 43 and 45 are metal layers mainly made of, for example, copper, gold, silver or aluminum.
  • the heat radiating plate 36 (heat radiating member) is a metal layer such as a copper layer or an aluminum layer or an insulating layer such as aluminum oxide or aluminum nitride.
  • the heat sink 36 may be a heat sink in which an insulating layer such as DBC (Direct Bonded Cupper) or DBA (Direct Bonded Aluminum) is sandwiched between metal layers.
  • the thickness of the heat radiating plate 36 is, for example, 100 ⁇ m to several mm.
  • the bonding layer 38 is a sintered metal layer in which a conductive paste such as silver paste is sintered, or a brazing material such as solder.
  • the thickness of the bonding layer 38 is, for example, several tens of ⁇ m.
  • the heat generated in the semiconductor component 40 is conducted to the heat sink 36 as in the path 50, and is discharged to the outside from the heat sink 36. Further, heat is conducted through the via 31, the metal layer 32, the via 33 and the metal layer 34, and is released from the metal layer 34 to the outside (for example, a mounting substrate).
  • paths 50 and 52 alone are not sufficient heat release paths.
  • Comparative Example 1 when the heat sink 36 is mounted on the semiconductor component 40 in the process of manufacturing the module, or when the module is used, as shown by the arrow 60.
  • stress is applied to the heat sink 36
  • stress is applied to the semiconductor component 40 as shown by arrow 64.
  • the characteristics of the semiconductor component 40 may change.
  • the semiconductor component 40 is a bare chip of a GaN FET
  • the characteristics of the GaN FET change (deteriorate) when stress is applied to the chip.
  • 3 (a) and 3 (b) are cross-sectional views of the high heat dissipation module structure according to the first embodiment, and is an enlarged view of the vicinity of the semiconductor component 40 of FIG. 1 (a).
  • the heat sink 36 is joined to at least a part of the upper surface of the core layer 10 and the upper surface of the semiconductor component 40.
  • heat is conducted from the heat sink 36 to the core layer 10 like the path 54.
  • Heat is conducted in the core layer 10 as in the path 56.
  • heat is conducted from the core layer 10 to the metal layer 34a via the wiring 35a provided in the insulating layer 23 and connecting the core layer 10 and the metal layer 34a as in the path 58.
  • the heat dissipation from the semiconductor component 40 can be improved by these paths.
  • heat is conducted from the semiconductor component 40 to the metal layer 34b via the wiring 35b provided in the insulating layer 23 and connecting the core layer 10 and the metal layer 34b as in the path 52. This path can further improve the heat dissipation from the semiconductor component 40.
  • the heat sink 36 when the heat sink 36 is mounted on the semiconductor component 40 or when the module is used, stress is applied to the heat sink 36 as shown by an arrow 60.
  • stress is applied to the core layer 10 rather than the semiconductor component 40 as shown by the arrow 62.
  • the stress applied to the semiconductor component 40 becomes smaller than that in FIG. 2 (b) of Comparative Example 1. Therefore, the change (deterioration) of the characteristics of the semiconductor component 40 can be suppressed.
  • the semiconductor component 40 is a bare chip of a GaN FET, the change (deterioration) in the characteristics of the GaN FET due to stress can be further suppressed.
  • planar shapes of the semiconductor component 40 is a substantially rectangular shape (for example, a substantially rectangular shape)
  • planar shape of the opening 12 is a substantially rectangular shape (for example, a substantially rectangular shape).
  • the heat sink 36 overlaps all of the openings 12, and the bonding layer 38 is provided in the outer region of all four sides of the opening 12. As a result, heat can be efficiently conducted from the heat sink 36 to the core layer 10. Therefore, heat dissipation can be improved.
  • the distance D1 is preferably 2 mm or less.
  • the distance D1 is preferably 25 ⁇ m or more in consideration of the alignment for mounting the semiconductor component 40 in the opening 12.
  • the width D2 of the bonding layer 38 that is, the width of the region where the heat sink 36 is bonded to the core layer 10.
  • the width D2 is preferably 50 ⁇ m or more. In order to increase the heat dissipation of the path 54, it is preferable to increase the width D2.
  • the bonding layer 38 is provided in the region outside the three sides of the opening 12, and the heat sink 36 is bonded to the core layer 10 in the region outside the three sides of the opening 12. ..
  • the bonding layer 38 is provided in the outer region of the two opposite sides of the opening 12, and the heat sink 36 is bonded to the core layer 10 in the outer region of the two opposite sides of the opening 12. ing.
  • the bonding layer 38 is provided in the region outside one side of the opening 12, and the heat sink 36 is bonded to the core layer 10 in the region outside one side of the opening 12. ..
  • the heat sink 36 is joined to at least a part of the upper surface of the core layer 10 surrounding the opening 12.
  • the heat generated in the semiconductor component 40 is transmitted from the heat radiating plate 36 to the core layer 10, so that the heat radiating property can be improved.
  • the heat sink 36 is formed as shown in FIGS. 4 (a) to 4 (c). It is preferable that the upper surface of the core layer 10 is joined to the outer regions of at least two opposite sides of the opening 12.
  • the heat sink 36 is joined to the outer regions of at least two opposite long sides of the inner opening 12 on the upper surface of the core layer 10. As a result, the stress of the arrow 60 is dispersed in the core layer 10, and the stress applied to the semiconductor component 40 can be suppressed.
  • FIG. 5A and 5 (b) are a cross-sectional view and a plan view of the high heat dissipation module structure according to the first modification of the first embodiment.
  • FIG. 5A corresponds to the AA cross section of FIG. 5B.
  • the heat sink 36 is also arranged above the electronic components 42 and 44.
  • the heat sink 36 is not joined to the electronic components 42 and 44.
  • the bonding layer 38 is provided in the upper surface of the semiconductor component 40 and the upper surface region of the core layer 10 outside the opening 12, and the bonding layer 38a is a core layer at the end of the heat sink 36 opposite to the semiconductor component 40 with the electronic component 42 sandwiched therein. It is provided on the upper surface of 10. No bonding layer is provided on the other parts of the heat sink 36.
  • Other configurations are the same as those in the first embodiment, and the description thereof will be omitted.
  • the heat sink 36 In order to improve heat dissipation, it is preferable to increase the heat sink 36. Therefore, it is preferable that the heat sink 36 is provided above the electronic components 42 and 44. However, when the electronic component 44 is connected to the heat sink 36 with a joining material, both electrodes 45 of the electronic component 44 are short-circuited. Further, when the heat sink 36 is joined to the electronic components 42 and 44, the heat generated in the semiconductor component 40 raises the temperature of the electronic components 42 and 44. Therefore, it is preferable that the heat sink 36 is not bonded to the upper surface of the electronic component 42. Further, when the heat radiating plate 36 is joined to the entire heat radiating plate 36, the thermal stress becomes large.
  • the bonding layer 38 should be provided on the upper surface of the semiconductor component 40 that generates heat and the upper surface of the core layer 10 in the vicinity thereof, and the bonding layer 38 should not be provided on the upper surfaces of the other electronic components 42 and 44 and the upper surface of the other core layer 10. Is preferable.
  • the bonding layer 38 When the bonding layer 38 is provided only in a part of the upper surface of the core layer 10, a clearance is formed between the heat sink 36 and the core layer 10, and the thermal stress is relaxed. However, if the heat sink 36 is large, the heat sink 36 is tilted with respect to the upper surface of the core layer 10. Therefore, a bonding layer 38a is provided at the end of the heat radiating plate 36. As a result, it is possible to prevent the heat radiating plate 36 from tilting with respect to the upper surface of the core layer 10. For example, when the heat radiating plate 36 is not joined to the electronic component 42, the heat radiating plate 36 sandwiches at least a part of the first region surrounding the opening 12 on the upper surface of the core layer 10 and the electronic component 42 with the semiconductor component 40. It is joined to the second region on the opposite side. As a result, even if the heat sink 36 is not joined to the electronic component 42, it is possible to prevent the heat sink 36 from tilting with respect to the upper surface of the core layer 10.
  • FIG. 6A and 6 (b) are a cross-sectional view and a plan view of the high heat dissipation module structure according to the second modification of the first embodiment.
  • FIG. 6A corresponds to the AA cross section of FIG. 6B.
  • the heat sink 36 is also arranged above the electronic components 42 and 44.
  • the heat sink 36 is joined to the electronic component 42, not to the electronic component 44.
  • the bonding layer 38 is provided in the upper surface region of the semiconductor component 40 and the upper surface region of the core layer 10 outside the opening 12, and the bonding layer 38b is provided in the upper surface region of the electronic component 42 and the upper surface region of the core layer 10 outside the opening 13. Has been done. No bonding layer is provided between the bonding layers 38 and 38b.
  • Other configurations are the same as those of the first modification of the first embodiment, and the description thereof will be omitted.
  • the heat radiating plate 36 includes at least a first region of the upper surface of the semiconductor component 40 and the upper surface of the core layer 10 surrounding the opening 12, and the upper surface of the electronic component 42 and the upper surface of the electronic component 42. It is joined to at least a part of the second region surrounding the opening 13 of the upper surface of the core layer 10. Thereby, the heat dissipation from the semiconductor component 40 and the electronic component 42 can be improved.
  • the thermal stress becomes large.
  • the heat sink 36 is not bonded to the upper surface of the core layer 10 in the region between the bonding layers 38 and 38b or in the upper surface of the electronic component 44 or in the vicinity thereof. That is, it is preferable that the first region and the second region are not connected. If thermal stress is not a problem, the bonding layers 38 and 38b may be connected.
  • the electronic component 42 may include a power transistor 48 similar to the semiconductor component 40.
  • FIG. 7A two semiconductor parts 40a and 40b are housed in one opening 12.
  • One heat sink 36 is joined to the upper surfaces of the semiconductor parts 40a and 40b via a joining layer 38.
  • the heat radiating plate 36 is joined to a region surrounding the opening 12 on the upper surface of the core layer 10 via a joining layer 38.
  • Other configurations are the same as those in the first embodiment, and the description thereof will be omitted.
  • two semiconductor parts 40a and 40b are housed in one opening 12.
  • One heat sink 36 is joined to the upper surfaces of the semiconductor parts 40a and 40b via the joining layers 38a and 38b, respectively.
  • Two bonding layers 38a and 38b are provided corresponding to the semiconductor components 40a and 40b, and are separated from each other.
  • Other configurations are the same as those in the first embodiment, and the description thereof will be omitted.
  • two semiconductor parts 40a and 40b are housed in one opening 12.
  • the two heat sinks 36a and 36b are joined to the upper surfaces of the semiconductor parts 40a and 40b via the joining layers 38a and 38b, respectively.
  • Two heat sinks 36a and 36b are provided corresponding to the semiconductor parts 40a and 40b, and are separated from each other.
  • Other configurations are the same as those in the first embodiment, and the description thereof will be omitted.
  • a plurality of semiconductor parts 40a and 40b may be provided in one opening 12.
  • One heat sink 36 and one bonding layer 38 may be provided for one opening 12, or a plurality of heat sinks 36a and 36b and a plurality of bonding layers 38a and 38b are provided corresponding to the semiconductor parts 40a and 40b. It may have been.
  • a plurality of semiconductor parts 40a and 40b may be provided in one opening 12.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

L'invention concerne une structure de module de dissipation de chaleur élevée comprenant : une couche centrale métallique 10 ayant une première ouverture 12 ; un composant semi-conducteur 40 disposé à l'intérieur de la première ouverture 12 ; un élément de dissipation de chaleur relié à au moins une partie de la surface supérieure de la couche centrale métallique 10 et à la surface supérieure du composant semi-conducteur 40 ; une première couche isolante disposée sous la couche centrale métallique 10 ; une première couche métallique 34a disposée sur la surface inférieure de la première couche isolante 23 ; et un premier fil 35a qui est disposé à l'intérieur de la première couche isolante 23 et relie la couche centrale métallique 10 et la première couche métallique 34a.　
PCT/JP2020/014109 2020-03-27 2020-03-27 Structure de module de dissipation thermique élevée WO2021192245A1 (fr)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012253118A (ja) * 2011-06-01 2012-12-20 Denso Corp 半導体装置
JP2017028060A (ja) * 2015-07-21 2017-02-02 株式会社デンソー 電子装置
JP2018019057A (ja) * 2017-01-12 2018-02-01 Tdk株式会社 電子回路パッケージ
JP2019033178A (ja) * 2017-08-08 2019-02-28 太陽誘電株式会社 半導体モジュール
WO2019167908A1 (fr) * 2018-02-28 2019-09-06 株式会社村田製作所 Module haute fréquence

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012253118A (ja) * 2011-06-01 2012-12-20 Denso Corp 半導体装置
JP2017028060A (ja) * 2015-07-21 2017-02-02 株式会社デンソー 電子装置
JP2018019057A (ja) * 2017-01-12 2018-02-01 Tdk株式会社 電子回路パッケージ
JP2019033178A (ja) * 2017-08-08 2019-02-28 太陽誘電株式会社 半導体モジュール
WO2019167908A1 (fr) * 2018-02-28 2019-09-06 株式会社村田製作所 Module haute fréquence

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