WO2021128548A1 - 一种沟槽igbt芯片 - Google Patents

一种沟槽igbt芯片 Download PDF

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Publication number
WO2021128548A1
WO2021128548A1 PCT/CN2020/075870 CN2020075870W WO2021128548A1 WO 2021128548 A1 WO2021128548 A1 WO 2021128548A1 CN 2020075870 W CN2020075870 W CN 2020075870W WO 2021128548 A1 WO2021128548 A1 WO 2021128548A1
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gate
well
dummy
dummy gate
main
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PCT/CN2020/075870
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English (en)
French (fr)
Inventor
宁旭斌
谭真华
李迪
肖海波
肖强
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株洲中车时代半导体有限公司
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Priority to EP20905673.8A priority Critical patent/EP4084083A4/en
Publication of WO2021128548A1 publication Critical patent/WO2021128548A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out

Definitions

  • the present invention relates to the technical field of semiconductor devices, and more specifically, to a trench IGBT chip.
  • Insulated Gate Bipolar Transistor combines MOSFET (Metal-Oxide-SemiconductorField-Effect Transistor, "MOSFET”) with high input impedance, simple gate drive, and bipolar junction transistor (Bipolar Junction Transistor). Junction Transistor, referred to as "BJT”) has the advantages of small conduction voltage drop and large operating current, and is widely used in industrial control, electric vehicles, rail transit, smart grids, and variable frequency home appliances.
  • MOSFET Metal-Oxide-SemiconductorField-Effect Transistor
  • BJT Bipolar Junction Transistor
  • the high current density when the trench IGBT is turned on will reduce the short-circuit resistance. Therefore, it is necessary to design the active area distribution to improve the short-circuit resistance of the device, so as to ensure the safe working area of the chip.
  • the virtual gate or floating P-well technology is usually used to suppress the lateral electric field expansion and avoid the occurrence of lateral voltage peaks that cause the IGBT blocking withstand voltage to decrease. Therefore, there are P-well regions with virtual gates and ineffective channel regions.
  • the virtual gate structure usually adopts an electrical short-circuit method to connect the virtual gate to the emitter, or connect the virtual gate to the gate, or connect the virtual gate to the field limiting loop of the terminal area, or the virtual gate is floating.
  • this application proposes a new type of trench IGBT chip, which can apply different potentials by drawing out the virtual gate and the virtual gate P-well, and effectively without reducing the performance. Avoid voltage or current overshoot in the switching process, and realize quantitative adjustment of the current rise rate during the IGBT turn-on process, and adjust the anti-electromagnetic interference ability according to the application.
  • the trench IGBT chip provided by the present application includes an N-type drift layer; a plurality of cells connected in parallel, and the cell includes two first trenches etched downwardly formed on the upper surface of the N-type drift layer
  • the main gate in the groove, the two main gates extend along the surface of the N-type drift layer and are distributed in parallel;
  • the dummy gate the dummy gate is located between the cells and is arranged on the N- In the second trench etched downward from the upper surface of the type drift layer, the dummy gate is parallel to the main gate; wherein, the dummy gate draws a potential through the main line of the dummy gate, and the main gate and
  • the virtual gate P+ contact region provided in the first virtual gate P-well between the virtual gates or the second virtual gate P-well between the two virtual gates P-wells draws a potential through the virtual gate P-well main line.
  • this trench IGBT chip by drawing out the virtual gate and the virtual gate P-well, they can apply different potentials respectively, avoiding the Vge rise at the turn-off moment caused by the large displacement current generated by the Cgc when the virtual gate and the P-well are floating.
  • the device's turn-off capability is reduced, and the voltage or current overshoot during the switching process is effectively avoided without degrading performance.
  • the virtual gate main line is connected to the emitter or gate of the cell region
  • the virtual gate P-well main line is connected to the emitter or gate of the cell region.
  • a plurality of the dummy gates are included, wherein when the first dummy gate P-well draws a potential, the second dummy gate P-well floats, or the second virtual gate P-well draws At the potential, the first dummy gate P-well floats.
  • the virtual gate P+ contact area is connected to the virtual gate P-well main line through a metal electrode and a poly resistor.
  • an isolation oxide layer is provided between the polycrystalline resistor and the surface of the chip.
  • the thickness of the isolation oxide layer is 1000A-1300A.
  • At least two dummy gates are included, and a plurality of lateral trenches are arranged between adjacent dummy gates, which are perpendicular to the length direction of the dummy gates, so that the dummy gates P well It is divided into a plurality of dummy gate active regions and a plurality of dummy gate regions arranged alternately, the dummy gate P+ contact region is arranged in the dummy gate P well of the virtual gate active region, and the dummy gate region The gate P well floats.
  • the cell has a hexagonal cell structure, and a plurality of the cells are distributed on the N-type drift layer in a honeycomb shape; or, the cell has a square cell structure, And a plurality of the cells are distributed on the N-type drift layer in a matrix form; or, the cells have a strip-shaped cell structure, and a plurality of the cells are distributed side by side on the N-type drift layer. On the drift layer.
  • the N-type drift layer further includes a punch-through structure, a soft punch-through structure or a non-punch-through structure below the N-type drift layer.
  • the main gate P-well between the two main gates includes a main gate P+ contact area and a main gate N+ emitter disposed on both sides of the main gate P+ contact area.
  • it further includes: a P+ collector layer; and an N-type buffer layer disposed between the P+ collector layer and the N-type drift layer.
  • the trench IGBT chip provided by this application has the following beneficial effects:
  • the present invention avoids that the displacement current generated by the large Cgc when the virtual gate and the P-well are floating causes the Vge to rise at the turn-off moment and reduces the turn-off capability of the device;
  • the present invention adjusts the connection mode of the virtual gate P trap through the layout, realizes the quantitative adjustment of the current rise rate (di/dt) according to the application requirements, improves the anti-electromagnetic interference ability of the system, and enhances the electromagnetic compatibility of the device and the system;
  • the di/dt controllable IGBT structure of the present invention does not affect the turn-off safe working area of the chip, and has a small effect on the turn-off loss (Eoff).
  • the trade-off relationship between turn-on loss (Eon) and reverse recovery loss (Erec) can be improved.
  • Increasing the grounding ratio of the virtual gate P-well will reduce the turn-on speed di/dt, which will increase the turn-on loss and decrease the turn-off loss; reduce the grounding ratio of the virtual gate P-well, and make the turn-on speed di/dt faster, which will make Turn-on loss decreased and Erec increased.
  • the present invention can lead the virtual gate P-well to the electrode, and apply different potentials during the turn-on and switching of the IGBT, so as to obtain different performances.
  • Fig. 1 shows a schematic diagram of a partial structure of a trench IGBT chip according to an embodiment of the present invention
  • Figure 2 shows a cross-sectional view of a trench IGBT chip according to an embodiment of the present invention
  • Figure 3 shows a cross-sectional view of a trench IGBT chip according to another embodiment of the present invention.
  • Figure 4 shows a top view of a trench IGBT chip according to an embodiment of the present invention
  • FIG. 5 and 6 show a cross-sectional view of a trench IGBT chip according to an embodiment of the present invention
  • Fig. 7 shows a top view of a trench IGBT chip according to another embodiment of the present invention.
  • Fig. 8 shows a top view of a trench IGBT chip according to another embodiment of the present invention.
  • FIG. 9 shows a graph of the current rise rate of a trench IGBT chip according to an embodiment of the present invention as a function of the virtual P-well area
  • FIG. 10 shows a schematic structural diagram of a trench IGBT chip according to another embodiment of the present invention.
  • FIG. 11 shows a cross-sectional view of a trench IGBT chip according to another embodiment of the present invention.
  • Fig. 12 shows a cross-sectional view of a trench IGBT chip according to another embodiment of the present invention.
  • 100-Trench IGBT chip 110-P+ collector layer; 120-N-type buffer layer; 130-N-type drift layer; 140-main gate; 141-first trench; 142-gate oxide layer; 143- Main gate P+ contact area; 144—Main gate N+emitter; 150—Dummy gate; 151—Second trench; 152—Virtual gate main line; 153—Virtual gate P+ contact area; 154—Virtual gate P well main line; 155 -Contact opening; 156-metal layer; 157-polyresistor; 158-isolation oxide layer; 160-lateral trench; 170-virtual gate active area; 171-virtual gate companion area; 180-first virtual gate P Well; 190-second virtual gate P-well; 200-bus bar.
  • FIG. 1 is a partial three-dimensional schematic diagram of a trench IGBT chip 100 provided by the present invention.
  • the trench IGBT chip 110 may include a P+ collector layer 110, an N-type buffer layer 120, and an N-type drift layer 130 that are sequentially stacked from bottom to top.
  • a plurality of cells connected in parallel are arranged on the upper surface of the trench IGBT chip 100.
  • Each cell includes an active region and a gate region.
  • the gate region includes two main gates 140 arranged in parallel.
  • the main gate 140 is disposed in the first trench 141 etched downward from the upper surface of the N-type drift layer 130, a gate oxide layer 142 is disposed on the sidewall of the first trench 141, and the main gate active region It includes a bottom-up main gate N-well and a main gate P-well.
  • the main-gate P-well includes a main-gate P+ contact area 143 and a main-gate N+ emitter 144 disposed on both sides of the main-gate P+ contact area 143
  • the sides of the main gate N well, main gate P well, main gate P+ contact area 143 and main gate N+ emitter 144 of the active region stop at the gate oxide layer 142.
  • the main gate P+ contact region 143 and the main gate N+ emitter 144 are electrically short-circuited, and are connected to the outside through a metal layer.
  • one or more dummy gates 150 can be provided between adjacent cells in parallel (that is, between the main gates). Similar to the main gate 140, the dummy gates 150 are arranged in an N-type In the second trench 151 formed by etching the upper surface of the drift layer 130 downward, a gate oxide layer 142 is provided on the sidewall of the second trench 151.
  • the width and depth of the first trench 141 and the width and depth of the second trench 151 may be the same or different, and the present invention is not limited herein.
  • two dummy gates 150 will be taken as an example to illustrate the case of a trench IGBT chip including a plurality of dummy gates 150.
  • two dummy gates 150 are included between adjacent cells, and the two dummy gates 150 are parallel to the main gate 140 and are distributed parallel to each other.
  • the dummy gate 150 may draw a potential through a dummy gate main line 152 (see FIG. 4), and the dummy gate main line 152 may be connected to the emitter or the gate of the cell region.
  • the virtual gate active region between the two virtual gates 150 includes a bottom-up virtual gate N-well and a virtual gate P-well.
  • the virtual gate P-well includes between the main gate 140 and the virtual gate 150.
  • the second dummy gate P-well 190 includes only the dummy gate P+ contact region 153 and does not include the emitter.
  • the virtual gate P+ contact region 153 can draw a potential through the virtual gate P-well main line 154 (see FIG. 4), and the virtual gate P-well main line can be connected to the emitter or the gate in the cell region, or connected to an external potential through an electrode.
  • the first dummy gate P-well 180 between the side of the main gate 140 where there is no conductive trench and the dummy gate 150 floats.
  • FIGS. 10 and 11 there is no dummy gate P-well between the main gate 140 and the dummy gate 150, but directly communicates with the N-type drift layer 130 .
  • the dummy gate P+ contact region 153 in the second dummy gate P-well 190 between the two dummy gates 150 is connected to the dummy gate P-well main line.
  • the first dummy gate P-well 180 between the side of the main gate 140 where there is no conductive trench and the dummy gate 150 includes dummy
  • the gate P+ contact region 153 can draw a potential through the virtual gate P-well main line, and the virtual gate P-well main line can be connected to the emitter or the gate in the cell region, or connected to an external potential through an electrode.
  • the second dummy gate P-well 190 between the two dummy gates 150 floats.
  • FIG. 12 there is no virtual gate P-well between the two virtual gates 150, but directly communicates with the N-type drift layer 130.
  • the dummy gate P+ contact region 153 in the first dummy gate P-well 180 between the main gate 140 and the dummy gate 150 is connected to the dummy gate P-well main line.
  • the dummy gate P+ contact region 153 that draws the potential is located on the side of the main gate 140 where there is no conductive trench and On the first virtual gate P-well 180 between the virtual gates 150, the virtual gate P+ contact region 153 can draw a potential through the virtual gate P-well main line, and the virtual gate P-well main line can be connected to the emitter or gate in the cell region.
  • the electrode is connected, or connected to an external potential through an electrode.
  • the voltage or current overshoot during the switching process can be effectively avoided, namely It avoids the Vge rise at the turn-off moment caused by the displacement current generated by the large Cgc when the virtual gate and the virtual gate P-well are floating in the prior art, which reduces the turn-off capability of the device.
  • FIG. 4 is a top view of the trench IGBT chip 100 provided by the present invention, which focuses on the connection between the polycrystalline resistor and the metal electrode near the bus bar 200.
  • This connection can realize the external connection of the virtual gate P-well when there is only one layer of metal on the front side, and no additional process cost is required.
  • the virtual gate P+ contact region 153 of the second virtual gate P-well 190 is connected to the metal layer 156 through the contact opening 155, and then connected to the virtual gate P-well main line 154 through the polyresistor 157.
  • the poly resistor 156 is along the trench direction.
  • Figures 5 and 6 are cross-sectional views of different surface regions, respectively, and the schematic diagrams show the connection characteristics of the virtual P-well.
  • Fig. 5 is a cross-sectional view of the vicinity of the lead electrode area of the P-well
  • Fig. 6 is a cross-sectional view of the vicinity of the lead electrode of the P-well without a lead-out electrode, and there are polycrystalline resistance traces on the surface of the P-well in this area.
  • the trench IGBT chip 100 further includes at least two dummy gates 150, and a plurality of lateral trenches are arranged between two adjacent dummy gates 150.
  • the plurality of lateral trenches 160 are arranged in the longitudinal direction perpendicular to the dummy gate 150 to physically divide the second dummy gate P-well 190 into a plurality of alternately arranged dummy gate active regions 170 and dummy gates.
  • the gate region 171, the virtual gate P-well in the virtual gate active region 170 is connected to the virtual gate P-well main line through the virtual gate P+ contact region 153 disposed therein, and the virtual gate P-well in the virtual gate region 171
  • the gate P well floats. In this way, different numbers of potential-connected virtual gate P-wells can be designed according to requirements, and the area of the virtual gate P-well can be adjusted by increasing the number of potential-connected virtual gate P-wells.
  • a dummy gate active region 170 is included, in which a second dummy gate P well 190 connected to a potential is provided, and the dummy gate P+ contacts
  • the region 153 is connected to the main line of the virtual gate P-well as described above, the virtual gate P-well in the virtual gate region 171 is floating, and the length of the second virtual gate P-well 190 and the virtual gate P+ contact region 153 at the potential is Increase, thereby increasing the area of the virtual gate P-well.
  • the trench IGBT chip provided by this application avoids the Vge rise at the turn-off moment caused by the large displacement current generated by the Cgc when the virtual gate and P-well are floating, and reduces the device turn-off capability; the virtual gate P-well is adjusted by layout
  • the connection method realizes quantitative adjustment of the current rise rate (di/dt) according to application requirements, improves the anti-electromagnetic interference ability of the system, and enhances the electromagnetic compatibility between the device and the system; the controllable di/dt IGBT structure of the present invention does not affect
  • the turn-off safe working area of the chip has little effect on turn-off loss (Eoff). However, the trade-off relationship between turn-on loss (Eon) and reverse recovery loss (Erec) can be improved.
  • Increasing the grounding ratio of the virtual gate P-well will reduce the turn-on speed di/dt, which will increase the turn-on loss and decrease the turn-off loss; reduce the grounding ratio of the virtual gate P-well, and make the turn-on speed di/dt faster, which will make Turn-on loss decreases and Erec increases; the virtual gate P-well is led out of the electrode, and different potentials are applied during the IGBT turn-on and switching process, so as to obtain different performances.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

本申请提供了一种沟槽IGBT芯片，包括N-型漂移层；多个并联的元胞，元胞包括两个设置于N-型漂移层上表面的第一沟槽内的主栅极，两个主栅极沿N-型漂移层的表面延伸且平行分布；虚栅极，位于元胞之间并设置于N-型漂移层上表面的第二沟槽内，虚栅极平行于主栅极；虚栅极通过虚栅主线引出电位，主栅极和虚栅极之间的第一虚栅P阱或者两个虚栅P阱之间的第二虚栅P阱中的虚栅P+接触区通过虚栅P阱主线引出电位。利用该沟槽IGBT芯片，通过引出虚栅以及虚栅P阱，使其分别能够施加不同的电位，避免了虚栅和P阱浮空时因Cgc较大产生的位移电流导致关断瞬间Vge抬升而减小了器件关断能力，在不降低性能的情况下有效地避免了开关过程中的电压或电流过冲。

Description

一种沟槽IGBT芯片
相关申请的交叉引用
本申请要求享有于2019年12月27日提交的名称为“一种沟槽IGBT芯片”的中国专利申请(申请号：201911374310.9)的优先权，该申请的全部内容通过引用并入本文中。
技术领域
本发明涉及半导体器件技术领域，并且更具体地，涉及一种沟槽IGBT芯片。
背景技术
绝缘栅双极晶体管(Insulated Gate Bipolar Transistor，简称“IGBT”)结合了MOSFET(Metal-Oxide-SemiconductorField-Effect Transistor,简称“MOSFET”)输入阻抗高、栅极驱动简单和双极结型晶体管(Bipolar Junction Transistor，简称“BJT”)导通压降小、工作电流大等优点，广泛应用于工业控制、电动汽车、轨道交通、智能电网和变频家电等领域。
沟槽IGBT导通时电流密度大，会降低抗短路能力，因此需要合理设计有源区分布来提升器件的抗短路能力，从而保证芯片的安全工作区。通常采用虚栅或浮空P阱技术来抑制横向电场扩展，避免出现横向的电压峰值导致IGBT阻断耐压降低，因此存在虚栅和非有效沟道区的P阱区域。目前虚栅结构通常采用电学短路方式，将虚栅与发射极连接，或者虚栅与栅极连接，或者虚栅与终端区的场限环连接，或者虚栅浮空。目前这些方式存在开关损耗增加、浪涌电压变大、耐压降低等问题。虚栅与主栅以及虚栅之间存在的P阱与主栅之间的P阱功能不同，一般将虚栅P阱浮空或者接地。当P阱浮空时，因米勒电容Cgc大，可能会在关断时产生位移电流，引起Vge电位提升，使器件关断能力恶化；而当P阱接地时，栅极G和发射极E之间的电容变大，米勒电容Cgc减小和Cge增大，使得关断位移电流减小，但芯片开通过程的延迟增加，开通过程di/dt的可控性变差。
发明内容
针对上述现有技术中的问题，本申请提出了一种新型的沟槽IGBT芯片，通过引出虚栅以及虚栅P阱，使其分别能够施加不同的电位，在不降低性能的情况下有效地避免了开关过程中的电压或电流过冲，并且实现了定量调节IGBT开通过程中的电流上升速率，根据应用调整提高抗电磁干扰能力。
本申请提供的沟槽IGBT芯片，包括N-型漂移层；多个并联的元胞，所述元胞包括两个设置于所述N-型漂移层上表面向下蚀刻而成的第一沟槽内的主栅极，两个所述主栅极沿所述N-型漂移层的表面延伸且平行分布；虚栅极，所述虚栅极位于元胞之间并设置于所述N-型漂移层上表面向下蚀刻而成的第二沟槽内，所述虚栅极平行于所述主栅极；其中，所述虚栅极通过虚栅主线引出电位，所述主栅极和所述虚栅极之间的第一虚栅P阱或者两个所述虚栅P阱之间的第二虚栅P阱中设置的虚栅P+接触区通过虚栅P阱主线引出电位。利用该沟槽IGBT芯片，通过引出虚栅以及虚栅P阱，使其分别能够施加不同的电位，避免了虚栅和P阱浮空时因Cgc较大产生的位移电流导致关断瞬间Vge抬升而减小了器件关断能力，在不降低性能的情况下有效地避免了开关过程中的电压或电流过冲。
在一个实施方式中，所述虚栅主线与元胞区的发射极或栅极连接，所述虚栅P阱主线与元胞区的发射极或栅极连接。
在一个实施方式中，包括多个所述虚栅极，其中，所述第一虚栅P阱引出电位时，所述第二虚栅P阱浮空，或者所述第二虚栅P阱引出电位时，所述第一虚栅P阱浮空。
在一个实施方式中，所述虚栅P+接触区通过金属电极连接、多晶电阻与虚栅P阱主线连接。
在一个实施方式中，所述多晶电阻与芯片表面之间设置有隔离氧化层。通过该实施方式，多晶电阻沿着沟槽方向，即使多晶电阻上存在电位，也不会对元胞区域产生影响
在一个实施方式中，所述隔离氧化层的厚度为1000A-1300A。
在一个实施方式中，包括至少两个虚栅极，且相邻虚栅极之间设置有多个横向沟槽，其垂直于所述所述虚栅极的长度方向，以将虚栅P阱分割为交替排列的多个虚栅有源区和多个虚栅陪区，所述虚栅有源区的虚栅P阱中设置所述虚栅P+接触区，所述虚栅陪区的虚栅P阱浮空。通过该实施方式，这样可以设计不同数目的接电位的P阱，来实现虚栅P阱面积的调整，实现根据应用要求定量调整电 流上升速率，提升系统的抗电磁干扰能力，增强器件与系统的电磁兼容性。
在一个实施方式中，所述元胞为六角形元胞结构，并且多个所述元胞以蜂窝状分布在所述N-型漂移层上；或者，所述元胞为方形元胞结构，并且多个所述元胞矩阵式地分布在所述N-型漂移层上；或者，所述元胞为条形元胞结构，并且多个所述元胞并排地分布在所述N-型漂移层上。
在一个实施方式中，所述N型漂移层下方还包括穿通型结构、软穿通型结构或非穿通型结构。
在一个实施方式中，所述两个主栅极之间的主栅极P阱包括主栅P+接触区以及设置于所述主栅P+接触区两侧的主栅N+发射极。
在一个实施方式中，还包括：P+集电极层；N型缓冲层，其设置在所述P+集电极层和所述N-型漂移层之间。
本申请提供的沟槽IGBT芯片，相较于现有技术，具有如下的有益效果：
1)本发明避免了虚栅和P阱浮空时因Cgc较大产生的位移电流导致关断瞬间Vge抬升而减小了器件关断能力；
2)本发明通过版图来调整虚栅P阱的连接方式，实现根据应用要求定量调整电流上升速率(di/dt)，提升系统的抗电磁干扰能力，增强器件与系统的电磁兼容性；
3)本发明的可控di/dt的IGBT结构，不影响芯片的关断安全工作区，对关断损耗(Eoff)影响小。但是可以提升开通损耗(Eon)和反向恢复损耗(Erec)的折中关系。增加虚栅P阱的接地比例，使导通速度di/dt下降，会使开通损耗增加和关断损耗下降；减小虚栅P阱的接地比例，使导通速度di/dt加快，会使开通损耗下降和Erec增加。
4)本发明可以将虚栅P阱引出电极，在IGBT导通、开关过程中施加不同的电位，从而获得不同的性能。
上述技术特征可以各种适合的方式组合或由等效的技术特征来替代，只要能够达到本发明的目的。
附图说明
在下文中将基于实施例并参考附图来对本发明进行更详细的描述。其中：
图1显示了根据本发明实施例的沟槽IGBT芯片的局部结构示意图；
图2显示了根据本发明实施例的沟槽IGBT芯片的剖面图；
图3显示了根据本发明另一实施例的沟槽IGBT芯片的剖面图；
图4显示了根据本发明实施例的沟槽IGBT芯片的俯视图；
图5和图6显示了根据本发明实施例的沟槽IGBT芯片的剖面图；
图7显示了根据本发明又一实施例的沟槽IGBT芯片的俯视图；
图8显示了根据本发明又一实施例的沟槽IGBT芯片的俯视图；
图9显示了根据本发明实施例的沟槽IGBT芯片的电流上升速率随虚拟P阱面积的变化图；
图10显示了根据本发明又一实施例的沟槽IGBT芯片的结构示意图；
图11显示了根据本发明又一实施例的沟槽IGBT芯片的剖视图；
图12显示了根据本发明又一实施例的沟槽IGBT芯片的剖视图。
附图标记清单：
100-沟槽IGBT芯片；110-P+集电极层；120-N型缓冲层；130-N-型漂移层；140-主栅极；141-第一沟槽；142-栅氧化层；143-主栅P+接触区；144-主栅N+发射极；150-虚栅极；151-第二沟槽；152-虚栅主线；153-虚栅P+接触区；154-虚栅P阱主线；155-接触开孔；156-金属层；157-多晶电阻；158-隔离氧化层；160-横向沟槽；170-虚栅有源区；171-虚栅陪区；180-第一虚栅P阱；190-第二虚栅P阱；200-母排。
在附图中，相同的部件使用相同的附图标记。附图并未按照实际的比例。
具体实施方式
下面将结合附图对本发明作进一步说明。
图1为本发明提供的沟槽IGBT芯片100的局部立体示意图。如图1所示，该沟槽IGBT芯片110可以包括由下到上依次叠置的P+集电极层110、N型缓冲层120和N-型漂移层130。该沟槽IGBT芯片100的上表面上设置有多个并联的元胞，每个元胞均包括有源区和栅极区，其中，栅极区包括平行排列的两个主栅极140，该主栅极140设置于N-型漂移层130的上表面向下蚀刻而成的第一沟槽141内，在第一沟槽141的侧壁上设置有栅氧化层142，主栅有源区包括自下而上分布的主栅极N阱和主栅极P阱，主栅极P阱包括主栅P+接触区143以及设 置于该主栅P+接触区143两侧的主栅N+发射极144，有源区的主栅极N阱、主栅极P阱、该主栅P+接触区143和主栅N+发射极144的侧部止于栅氧化层142。该主栅P+接触区143和主栅N+发射极144电学短路，并通过金属层与外部连接。
在图1中，在并联的相邻元胞之间(即主栅极之间)可以设置一个或多个虚栅极150，与主栅极140类似，该虚栅极150设置于N-型漂移层130的上表面向下蚀刻而成的第二沟槽151内，在第二沟槽151的侧壁上设置有栅氧化层142。
可选地，该第一沟槽141的宽度和深度与第二沟槽151的宽度和深度可以相同，也可以不同，本发明在此不作限定。
为了说明的目的，将以两个虚栅极150为例来说明包含多个虚栅极150的沟槽IGBT芯片的情形。如图1和图2所示地，在一个实施例中，相邻元胞之间包括两个虚栅极150，该两个虚栅极150平行于主栅极140并且其彼此平行分布。如图4详细示出地，虚栅极150可以通过虚栅主线152(参见图4)引出电位，该虚栅主线152可以与元胞区的发射极或栅极连接。两个虚栅极150之间的虚栅有源区包括自下而上分布的虚栅极N阱和虚栅极P阱，该虚栅P阱包括主栅极140和虚栅极150之间的第一虚栅P阱180以及两个相邻虚栅极150之间的第二虚栅P阱190，第二虚栅P阱190仅包括虚栅P+接触区153而不包括发射极，该虚栅P+接触区153可以通过虚栅P阱主线154(参见图4)引出电位，该虚栅P阱主线可以与元胞区中的发射极或者栅极连接，或者通过电极与外部电位相连。另一方面，在主栅极140的不存在导电沟槽的一侧与虚栅极150之间的第一虚栅P阱180浮空。
作为对图2实施例的备选实施例，如图10和11所示，在主栅极140和虚栅极150之间不存在虚栅P阱，而是直接与N-型漂移层130相通。两个虚栅极150之间的第二虚栅P阱190中的虚栅P+接触区153与虚栅P阱主线连接。
在与图2实施例相反的另一个实施例中，如图3所示，主栅极140的不存在导电沟槽的一侧与虚栅极150之间的第一虚栅P阱180包括虚栅P+接触区153，其可以通过虚栅P阱主线引出电位，该虚栅P阱主线可以与元胞区中的发射极或者栅极连接，或者通过电极与外部电位相连。另一方面，两个虚栅极150之间的第二虚栅P阱190浮空。
同样地，作为对图3实施例的备选，如图12所示，两个虚栅150之间不存在虚栅P阱，而是直接与N-型漂移层130相通。主栅极140和虚栅极150之间的 第一虚栅P阱180中的虚栅P+接触区153与虚栅P阱主线连接。
在另外的实施例中，在相邻的两个元胞之间仅存在一个虚栅极，则引出电位的虚栅P+接触区153则位于主栅极140的不存在导电沟槽的一侧与虚栅极150之间的第一虚栅P阱180上，该虚栅P+接触区153可以通过虚栅P阱主线引出电位，该虚栅P阱主线可以与元胞区中的发射极或者栅极连接，或者通过电极与外部电位相连。
利用上述实施例中的结构，通过分别引出虚栅以及虚栅P阱，并分别施加不同的电位，在不降低IGBT性能的前提下，能够有效地避免开关过程中的电压或电流过冲，即避免了现有技术中虚栅和虚栅P阱浮空时因Cgc较大产生的位移电流导致关断瞬间Vge抬升而减小了器件关断能力。
图4为本发明提供的沟槽IGBT芯片100的俯视图，其重点展示了母排200附近的多晶电阻和金属电极之间的联接方式。这种连接能在正面仅有一层金属时实现虚栅P阱的外部连接，不需要增加额外的工艺成本。具体来说，第二虚栅P阱190的虚栅P+接触区153通过接触开孔155与金属层156连接，再通过多晶电阻157与虚栅P阱主线154连接。多晶电阻156与半导体表面存在1000A～1300A厚度的隔离氧化层158，多晶电阻156沿着沟槽方向，即使多晶电阻156上存在电位，也不会对元胞区域产生影响。图5和图6分别是不同表面区域的截面图，该示意图展示了虚拟P阱的连接特点。图5是P阱引出电极区域附近的截面图，图6是P阱没有引出电极附近的截面图，该区域的P阱表面存在多晶电阻走线。
本领域技术人员理解，在IGBT芯片中，虚栅P阱的面积对开关过程中的电流上升速率di/dt有显著影响，如图9所示，当虚栅P阱接地时，随着虚栅P阱面积的增加，电流上升速率di/dt近似线性下降。在本发明的一个优选的实施例中，如图7所示，该沟槽IGBT芯片100还包括至少两个虚栅极150，且相邻两个虚栅极150之间设置有多个横向沟槽160，该多个横向沟槽160设置在垂直于虚栅极150的长度方向，以将第二虚栅P阱190物理地分割为多个交替排列的多个虚栅有源区170和虚栅陪区171，在虚栅有源区170中的虚栅P阱通过设置于其中的虚栅P+接触区153如上文所述地与虚栅P阱主线连接，虚栅陪区171中的虚栅P阱浮空。这样可以根据需求设计不同数目的接电位的虚栅P阱，通过增加接电位的虚栅P阱的数目来实现虚栅P阱面积的调整。
进一步地，如图8所示地，该IGBT芯片100的两个虚栅极150之间包括虚 栅有源区170，其中设置有接电位的第二虚栅P阱190，通过虚栅P+接触区153如上文所述地与虚栅P阱主线连接，虚栅陪区171中的虚栅P阱浮空，且该接电位的第二虚栅P阱190和虚栅P+接触区153的长度增大，从而增大虚栅P阱的面积。
应理解，本发明以上是基于条形元胞进行解释和说明的，二本发明同样也适用与方形元胞、六角形元胞、圆形元胞等结构。
另外应理解，本发明以上是基于非穿通结构进行解释和说明的,本发明同样也适用于穿通结构和软穿通结构。
本申请提供的沟槽IGBT芯片，避免了虚栅和P阱浮空时因Cgc较大产生的位移电流导致关断瞬间Vge抬升而减小了器件关断能力；通过版图来调整虚栅P阱的连接方式，实现根据应用要求定量调整电流上升速率(di/dt)，提升系统的抗电磁干扰能力，增强器件与系统的电磁兼容性；本发明的可控di/dt的IGBT结构，不影响芯片的关断安全工作区，对关断损耗(Eoff)影响小。但是可以提升开通损耗(Eon)和反向恢复损耗(Erec)的折中关系。增加虚栅P阱的接地比例，使导通速度di/dt下降，会使开通损耗增加和关断损耗下降；减小虚栅P阱的接地比例，使导通速度di/dt加快，会使开通损耗下降和Erec增加；将虚栅P阱引出电极，在IGBT导通、开关过程中施加不同的电位，从而获得不同的性能。
在本发明的描述中，需要理解的是，术语“上”、“下”、“底”、“顶”、“前”、“后”、“内”、“外”、“左”、“右”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。
虽然在本文中参照了特定的实施方式来描述本发明，但是应该理解的是，这些实施例仅仅是本发明的原理和应用的示例。因此应该理解的是，可以对示例性的实施例进行许多修改，并且可以设计出其他的布置，只要不偏离所附权利要求所限定的本发明的精神和范围。应该理解的是，可以通过不同于原始权利要求所描述的方式来结合不同的从属权利要求和本文中所述的特征。还可以理解的是，结合单独实施例所描述的特征可以使用在其他所述实施例中。

Claims (12)

  1. 一种沟槽IGBT芯片，其特征在于，包括：
    N-型漂移层；
    多个并联的元胞，所述元胞包括两个设置于所述N-型漂移层上表面向下蚀刻而成的第一沟槽内的主栅极，两个所述主栅极沿所述N-型漂移层的表面延伸且平行分布；
    虚栅极，所述虚栅极位于元胞之间并设置于所述N-型漂移层上表面向下蚀刻而成的第二沟槽内，所述虚栅极平行于所述主栅极；
    其中，所述虚栅极通过虚栅主线引出电位，所述主栅极和所述虚栅极之间的第一虚栅P阱或者两个所述虚栅P阱之间的第二虚栅P阱中设置的虚栅P+接触区通过虚栅P阱主线引出电位。
  2. 根据权利要求1所述的沟槽IGBT芯片，其特征在于，所述虚栅主线与元胞区的发射极或栅极连接，所述虚栅P阱主线与元胞区的发射极或栅极连接。
  3. 根据权利要求2所述的沟槽IGBT芯片，其特征在于，包括多个所述虚栅极，其中，所述第一虚栅P阱引出电位时，所述第二虚栅P阱浮空，或者所述第二虚栅P阱引出电位时，所述第一虚栅P阱浮空。
  4. 根据权利要求3所述的沟槽IGBT芯片，其特征在于，所述虚栅P+接触区通过金属电极连接、多晶电阻与虚栅P阱主线连接。
  5. 根据权利要求4所述的沟槽IGBT芯片，其特征在于，所述多晶电阻与芯片表面之间设置有隔离氧化层。
  6. 根据权利要求5所述的沟槽IGBT芯片，其特征在于，所述隔离氧化层的厚度为1000A-1300A。
  7. 根据权利要求2所述的沟槽IGBT芯片，其特征在于，包括一个虚栅极，所述第一虚栅P阱种的所述虚栅P+接触区引出电位。
  8. 根据权利要求1至7中任一项所述的沟槽IGBT芯片，其特征在于，包括至少两个虚栅极，且相邻虚栅极之间设置有多个横向沟槽，其垂直于所述所述虚栅极的长度方向，以将虚栅P阱分割为交替排列的多个虚栅有源区和多个虚栅陪区，所述虚栅有源区的虚栅P阱中设置所述虚栅P+接触区，所述虚栅陪区的虚栅P阱浮空。
  9. 根据权利要求1至7中任一项所述的沟槽IGBT芯片，其特征在于，
    所述元胞为六角形元胞结构，并且多个所述元胞以蜂窝状分布在所述N-型漂移层上；或者，
    所述元胞为方形元胞结构，并且多个所述元胞矩阵式地分布在所述N-型漂移层上；或者，
    所述元胞为条形元胞结构，并且多个所述元胞并排地分布在所述N-型漂移层上。
  10. 根据权利要求1至7中任一项所述的沟槽IGBT芯片，其特征在于，所述N型漂移层下方还包括穿通型结构、软穿通型结构或非穿通型结构。
  11. 根据权利要求1至7中任一项所述的沟槽IGBT芯片，其特征在于，所述两个主栅极之间的主栅极P阱包括主栅P+接触区以及设置于所述主栅P+接触区两侧的主栅N+发射极。
  12. 根据权利要求1至7中任一项所述的沟槽IGBT芯片，其特征在于，还包括：
    P+集电极层；
    N型缓冲层，其设置在所述P+集电极层和所述N-型漂移层之间。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115911118A (zh) * 2022-11-10 2023-04-04 上海功成半导体科技有限公司 Igbt器件及其制备方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113871470A (zh) * 2021-09-16 2021-12-31 上海擎茂微电子科技有限公司 一种调节igbt开通和关断损耗比例的新型结构
CN113871469A (zh) * 2021-09-16 2021-12-31 上海擎茂微电子科技有限公司 一种用于优化饱和电压/关断损耗的绝缘栅双极型晶体管
CN218996723U (zh) * 2022-11-18 2023-05-09 厦门芯达茂微电子有限公司 Igbt器件结构
CN116779645B (zh) * 2023-07-03 2024-03-29 上海陆芯电子科技有限公司 一种功率器件结构

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080224207A1 (en) * 2007-03-14 2008-09-18 Mitsubishi Electric Corporation Insulated gate transistor
CN101499473A (zh) * 2008-01-28 2009-08-05 株式会社电装 具有绝缘栅半导体元件的半导体器件和绝缘栅双极晶体管
US20160020310A1 (en) * 2014-07-16 2016-01-21 Denso Corporation Semiconductor device and manufacturing method for the same
US20160336403A1 (en) * 2014-04-23 2016-11-17 Fuji Electric Co., Ltd. Semiconductor device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5973730B2 (ja) * 2012-01-05 2016-08-23 ルネサスエレクトロニクス株式会社 Ｉｅ型トレンチゲートｉｇｂｔ
US9299819B2 (en) * 2012-03-28 2016-03-29 Infineon Technologies Americas Corp. Deep gate trench IGBT
JP5987990B2 (ja) * 2013-08-15 2016-09-07 富士電機株式会社 半導体装置
CN105762147B (zh) * 2016-04-14 2018-10-26 株洲中车时代电气股份有限公司 一种半导体功率器件版图
CN110429133B (zh) * 2019-07-17 2022-11-01 国电南瑞科技股份有限公司 一种绝缘栅双极型晶体管

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080224207A1 (en) * 2007-03-14 2008-09-18 Mitsubishi Electric Corporation Insulated gate transistor
CN101499473A (zh) * 2008-01-28 2009-08-05 株式会社电装 具有绝缘栅半导体元件的半导体器件和绝缘栅双极晶体管
US20160336403A1 (en) * 2014-04-23 2016-11-17 Fuji Electric Co., Ltd. Semiconductor device
US20160020310A1 (en) * 2014-07-16 2016-01-21 Denso Corporation Semiconductor device and manufacturing method for the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP4084083A4 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115911118A (zh) * 2022-11-10 2023-04-04 上海功成半导体科技有限公司 Igbt器件及其制备方法
CN115911118B (zh) * 2022-11-10 2023-07-18 上海功成半导体科技有限公司 Igbt器件及其制备方法

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