WO2021093049A1 - 薄膜晶体管液晶显示器 - Google Patents

薄膜晶体管液晶显示器 Download PDF

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Publication number
WO2021093049A1
WO2021093049A1 PCT/CN2019/122901 CN2019122901W WO2021093049A1 WO 2021093049 A1 WO2021093049 A1 WO 2021093049A1 CN 2019122901 W CN2019122901 W CN 2019122901W WO 2021093049 A1 WO2021093049 A1 WO 2021093049A1
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Prior art keywords
display area
film transistor
thin film
layer
substrate
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PCT/CN2019/122901
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English (en)
French (fr)
Inventor
朱清永
Original Assignee
Tcl华星光电技术有限公司
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Priority to US16/623,793 priority Critical patent/US20210286211A1/en
Publication of WO2021093049A1 publication Critical patent/WO2021093049A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133388—Constructional arrangements; Manufacturing methods with constructional differences between the display region and the peripheral region
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133776—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers having structures locally influencing the alignment, e.g. unevenness
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13398—Spacer materials; Spacer properties
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13458—Terminal pads
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device

Definitions

  • the present disclosure relates to a thin-film transistor liquid-crystal display (thin-film transistor liquid-crystal display) display, TFT-LCD) technical field, especially related to a thin film transistor liquid crystal display.
  • TFT-LCD thin-film transistor liquid-crystal display
  • the CF liquid crystal
  • TFT thin film transistor
  • the alignment liquid is coated on the surface of the CF substrate and the TFT array substrate facing the liquid crystal and aligned to form an alignment film.
  • Inkjet printing is a common process for printing alignment liquid, which has the advantages of high printing efficiency and high utilization rate of alignment liquid.
  • the alignment liquid will diffuse freely to form an irregular edge area.
  • the thickness of the alignment liquid in the irregular edge area is uneven, so it is necessary to expand the irregular edge area as much as possible to reduce the average thickness to avoid affecting the cell thickness (cell gap) uniformity.
  • the irregular edge area needs to spread to a distance of 1.2-2.4 mm from the edge of the active area, so as not to affect the uniformity of the cell thickness. Therefore, the width of the border (non-display area) is less than 2.4 mm narrow border products, when the alignment liquid is sprayed on the display area of the TFT array substrate, the alignment liquid is easy to diffuse to the connection pads (transfers) arranged in the non-display area. pad). Due to the insulating properties of the alignment liquid, when the alignment liquid covers the connection pads, it will lead to poor conduction between the connection pads and the conductive particles, so that the signals on the TFT array substrate cannot be conducted to the common electrode of the CF substrate through the connection pads and conductive particles. Cause the display to be abnormal.
  • a thin film transistor liquid crystal display which includes a first substrate.
  • the first substrate includes a display area and a non-display area surrounding the display area.
  • the display area is provided with a thin film transistor.
  • the non-display area is provided with a first common electrode, a connection pad and an arc-shaped protrusion.
  • the connection pad is arranged on a side of the non-display area away from the display area, and is arranged on the first common electrode for connecting to a common voltage generating circuit.
  • the arc-shaped protrusion is arranged on a side of the non-display area close to the display area.
  • the arc radius is greater than or equal to the width of the connecting pad.
  • the non-display area is further provided with a circuit which electrically connects the thin film transistor and the first common electrode.
  • the thin film transistor includes a gate electrode layer, an insulating layer, an active layer, and a source/drain layer.
  • the arc-shaped protrusion is a single-layer or multi-layer structure of the same material as one or more layers of the thin film transistor.
  • the arc-shaped protrusion is a single-layer or multi-layer structure composed of a metal material, an insulating material, an active material, or a combination thereof.
  • the display area further includes a flat layer, a columnar optical spacer, a black matrix, a color filter, or a combination thereof.
  • the arc-shaped protrusion is a single-layer or multi-layer structure of the same material as one or more of the flat layer, the columnar optical spacer, the black matrix, and the color filter.
  • the first substrate further includes an alignment film.
  • the alignment film only covers the display area and the area from the display area to the side of the arc-shaped protrusion adjacent to the display area.
  • the thin film transistor liquid crystal display further includes a sealant, a second substrate, and conductive particles.
  • the sealant covers the outer side of the non-display area from the side of the arc-shaped protrusion away from the display area.
  • the second substrate includes a second common electrode. The second substrate is arranged in a box by the sealant and the first substrate. The conductive particles are arranged on the connection pad of the first substrate and are electrically connected to the second common electrode.
  • the sealant is mixed with a plurality of first spherical spacers to maintain the thickness of the box.
  • the display area is provided with a plurality of second spherical spacers.
  • the plurality of second spherical spacers are in contact with the first substrate and the second substrate after the first substrate and the second substrate are assembled in the box, and are used to maintain the thickness of the box.
  • an arc is arranged in the non-display area of the TFT array substrate on the side of the connection pad near the display area, that is, in the direction in which the alignment liquid diffuses to the connection pad.
  • the convex and the arc radius is greater than or equal to the width of the connection pad, and is used to guide the alignment liquid to flow around the connection pad when the alignment liquid is applied to the display area of the TFT array substrate, so as to prevent the alignment liquid from covering the connection of the non-display area pad.
  • the thin film transistor liquid crystal display provided by the present disclosure and the manufacturing method thereof can solve the problem that the alignment liquid is easily diffused when the alignment liquid is sprayed on the display area of the TFT array substrate when the narrow frame product with a frame (non-display area) width less than 2.4 mm
  • the connection pad in the non-display area causes poor conduction between the connection pad and the conductive particles, which in turn causes a technical problem of abnormal display.
  • the arc-shaped protrusions can be made at the same time with one or more layers of the TFT array substrate, without the need for a new manufacturing process.
  • FIG. 1 is a schematic diagram of a thin film transistor liquid crystal display according to an embodiment of the present disclosure.
  • FIG. 2 is a partial cross-sectional view of a thin film transistor liquid crystal display of an embodiment of the present disclosure.
  • FIG. 3 is a flowchart of a method for manufacturing a thin film transistor liquid crystal display according to an embodiment of the present disclosure.
  • the thin film transistor liquid crystal display 100 includes a TFT array substrate 110, a CF substrate 120, liquid crystal 130, a sealant 140 and a conductive particle 144.
  • the TFT array substrate 110 includes a first glass substrate 10.
  • the first glass substrate 10 is divided into a display area 112 and a non-display area 114 surrounding the display area 112.
  • the first glass substrate 10 is provided with a plurality of thin film transistors 111 on the display area 112.
  • Each thin film transistor 111 includes a gate electrode layer, an insulating layer, an active layer, and a source/drain layer.
  • the first glass substrate 10 is provided with a driving circuit layer 20, a first common electrode 30, a connection pad 116 and an arc-shaped protrusion 118 on the non-display area 114.
  • the driving circuit layer 20 is disposed on the first glass substrate 10.
  • the first common electrode 30 is disposed on the driving circuit layer 20.
  • the connecting pad 116 is disposed on the first common electrode 30 for connecting to a common voltage generating circuit.
  • the driving circuit layer 30 includes a plurality of driving circuits for electrically connecting the thin film transistor 111 and the first common electrode 30.
  • the common voltage generating circuit is used to generate a common voltage.
  • the common voltage is transmitted to the driving circuit through the connection pad 116 and the first common electrode 30, so that the driving circuit generates a driving signal to the thin film transistor 111 to control the switching of the thin film transistor 111 .
  • the arc-shaped protrusion 118 is adjacent to a side of the connecting pad 116 close to the display area 112 and has an arc radius greater than or equal to the width of the connecting pad 116.
  • the height of the arc-shaped protrusion 118 may be 2-4 um, and the width of the arc-shaped protrusion 118 may be 5-50 um, but is not limited to this, and can be determined according to the process precision.
  • the arc-shaped protrusion 118 may be made by designing an arc-shaped protrusion area on the corresponding mask when preparing one or more layers of the thin film transistor 111, so that the arc-shaped protrusion 118 has a single-layer or multi-layer structure of the same material as one or more layers of the thin film transistor 111, thereby reducing production costs.
  • the arc-shaped protrusion 118 can be a single-layer or multi-layer structure composed of a metal material, an insulating material, an active material, or a combination thereof.
  • the arc-shaped protrusion may be a single-layer structure made of the same material as the gate electrode layer, or a double-layer structure made of the same material as the active layer and the source and drain layers.
  • the TFT array substrate 110 further includes an overcoat disposed on the display area 112 to cover the thin film transistor 111.
  • the whole or part of the arc-shaped protrusion 118 is made of the same material as the flat layer.
  • the CF substrate 120 includes a second glass substrate 121, a light-shielding layer (ie, a black matrix (BM)) 122, a color filter layer 123, a protective layer 124, and a first glass substrate.
  • a light-shielding layer ie, a black matrix (BM)
  • BM black matrix
  • the light-shielding layer 122 is used to: (1) shield the area other than the color filter film layer 123 to prevent the backlight from leaking light, thereby increasing the contrast of the thin film transistor liquid crystal display 100 (2) prevent the backlight from passing through the color filter film
  • the light of the three primary colors generated by the adjacent red, blue, and green photoresistors in the layer is mixed to improve the color purity of the thin film transistor liquid crystal display 100, and (3) prevent the light from causing the TFT to malfunction and change the operating parameters.
  • the light shielding layer 122 may be black resin, a single layer of chromium (Cr) or a double layer of chromium (Cr)/chromium oxide (CrOx).
  • the black resin is a resin mixed with inorganic or organic black pigments.
  • the inorganic black material may be carbon black, titanium black, manganese dioxide, or a combination thereof, but is not limited thereto.
  • the color filter layer 123 includes photoresists of the three primary colors of red, blue, and green. The red, blue, and green photoresist can be in a triangular configuration, a square configuration, a linear configuration, or a yardseck configuration.
  • the protective layer 124 is used to prevent contaminants on the color filter film layer 123 from entering the liquid crystal and cause malfunctions, and to flatten the light shielding layer 122 and the color filter film layer 123 to facilitate further fabrication on them
  • the second common electrode 125 may be made of polymer materials such as epoxy resin, acrylic resin, polyimide resin, and polyvinyl alcohol resin.
  • the second common electrode 125 is a transparent conductive film made of indium tin oxide.
  • the TFT array substrate 110 may be a COA (CF On Array) type TFT array substrate, that is, the color filter layer 123 is disposed on the display area 112 of the TFT array substrate 110, and the arc
  • the whole or part of the shaped protrusion 118 is made of the same material as the color filter layer 123 and made at the same time.
  • the whole or part of the arc-shaped protrusion 118 can be composed of red, blue or green photoresist.
  • the TFT array substrate 110 may be a BOA (BM On Array) type TFT array substrate, that is, the light-shielding layer (ie, black matrix (black matrix)).
  • matrix, BM) 125 is arranged on the TFT array substrate 110, and the whole or part of the arc-shaped protrusion 118 is made of the same material as the light shielding layer and made at the same time.
  • the whole or part of the arc-shaped protrusion 118 may be composed of black resin, a single layer of chromium (Cr) or a double layer of chromium (Cr)/chromium oxide (CrOx).
  • the TFT array substrate 110 and the CF substrate 120 are arranged in a box by the sealant 140.
  • the sealant 140 is coated on the side of the arc-shaped protrusion 118 away from the display area 112 in the non-display area 114 of the TFT array substrate 110.
  • the sealant 140 is mixed with a plurality of first spherical spacers 142, which have the same radius, and are used to maintain the uniformity of the box thickness.
  • the conductive particles 144 are disposed on the connection pad 116 of the TFT array substrate 110 and are in contact with the second common electrode 125 of the CF substrate 120, so that the common voltage generated by the common voltage generating circuit can pass through
  • the connection pad 116 and the conductive particles 144 are transferred to the second common electrode 125 of the CF substrate 120.
  • the signal on the TFT array substrate 110 can be conducted to the CF substrate 120 via the connection pad 116 and the conductive particles 144.
  • the conductive particle 144 can be a microsphere with one or more layers of metal uniformly coated on the surface.
  • the metal may be gold, silver, copper, tin, or a combination thereof, but is not limited thereto.
  • the microspheres may be made of silica or polymers such as plastics. All conductive particles have the same radius to maintain the uniformity of the cell thickness.
  • the liquid crystal 130 is disposed in the display area 112 of the TFT array substrate 110 and sealed between the CF substrate 120 and the TFT array substrate 110.
  • the liquid crystal 130 may be a nematic liquid crystal, a smectic liquid crystal, a cholesteric liquid crystal or a combination thereof.
  • the liquid crystal 130 may be doped with an optical active agent.
  • An alignment film 150 is additionally provided on the opposite surfaces of the TFT array substrate 110 and the CF substrate 120. The alignment film is used to provide a pretilt angle so that the alignment direction of the liquid crystal 130 between the CF substrate 120 and the TFT array substrate 110 is consistent.
  • the alignment film 150 may be polyimide.
  • the distance between the TFT array substrate 110 and the CF substrate 120 that is, the cell thickness
  • Two spherical spacers 160 The spherical spacer 160 is in contact with the TFT array substrate 110 and the CF substrate 120 to maintain the thickness of the cell.
  • the TFT array substrate 110 may be a POA (PS on Array) type TFT array substrate, that is, a plurality of columnar optical spacers (photo spacer, PS) is arranged on the display area of the TFT array substrate 110 to replace the second spherical spacer 160, and the whole or part of the arc-shaped protrusion 118 is made of the same material as the columnar optical spacer. Made at the same time.
  • a POA PS on Array
  • the arc-shaped protrusion 118 is connected to one or more layers of the thin film transistor 111, and/or the flat layer, the columnar optical spacer, the black matrix and the color filter
  • One or more of the sheets are a multi-layer structure made of the same material at the same time.
  • FIG. 3 is a flowchart of a method for manufacturing a thin film transistor liquid crystal display 100 according to an embodiment of the disclosure.
  • the manufacturing method of the thin film transistor liquid crystal display 100 of the embodiment of the present disclosure includes the following steps.
  • Step S1 forming a TFT array substrate 110 including a first glass substrate 10.
  • the first glass substrate 10 is divided into a display area 112 and a non-display area 114 surrounding the display area 112.
  • the first glass substrate 10 is provided with a plurality of thin film transistors 111 on the display area 112.
  • Each thin film transistor 111 includes a gate electrode layer, an insulating layer, an active layer, and a source/drain layer.
  • the first glass substrate 10 is provided with a driving circuit layer 20, a first common electrode 30, a connection pad 116 and an arc-shaped protrusion 118 on the non-display area 114.
  • the driving circuit layer 20 is disposed on the first glass substrate 10.
  • the first common electrode 30 is disposed on the driving circuit layer 20.
  • the connecting pad 116 is disposed on the first common electrode 30 for connecting to a common voltage generating circuit.
  • the driving circuit layer 30 includes a plurality of driving circuits for electrically connecting the thin film transistor 111 and the first common electrode 30.
  • the common voltage generating circuit is used to generate a common voltage.
  • the common voltage is transmitted to the driving circuit through the connection pad 116 and the first common electrode 30, so that the driving circuit generates a driving signal to the thin film transistor 111 to control the switching of the thin film transistor 111 .
  • the arc-shaped protrusion 118 is adjacent to a side of the connecting pad 116 close to the display area 112 and has an arc radius greater than or equal to the width of the connecting pad 116.
  • the height of the arc-shaped protrusion 118 may be 2-4 um, and the width of the arc-shaped protrusion 118 may be 5-50 um, but is not limited to this, and can be determined according to the process precision.
  • the arc-shaped protrusion 118 may be made by designing an arc-shaped protrusion area on the corresponding mask when preparing one or more layers of the thin film transistor 111, so that the arc-shaped protrusion 118 has a single-layer or multi-layer structure array of the same material as one or more layers of the thin film transistor 111, thereby reducing production costs.
  • the arc-shaped protrusion 118 can be composed of a metal material, an insulating material, an active material, or a combination thereof.
  • an arc-shaped convex area is designed on the corresponding photomask on the side of the connection pad 116 near the display area 112, and then through exposure and The development forms an arc-shaped protrusion 118 of the same material as the gate electrode layer and a single-layer structure made at the same time.
  • the arc-shaped protrusion 118 may be a single-layer structure composed of a metal material.
  • an arc-shaped protrusion area is designed on the corresponding mask, and then a part of the arc-shaped protrusion 118 is formed by exposure and development, and the source is prepared.
  • an arc-shaped protrusion area is designed on the corresponding mask, and then another part of the arc-shaped protrusion 118 is formed by exposure and development. Thereby, an arc-shaped protrusion 118 with a double-layer structure made of the same material as the active layer and the source and drain layers and made at the same time is formed.
  • the arc-shaped protrusion 118 may be a double-layer structure composed of a metal material and an active material.
  • the TFT array substrate 110 further includes an overcoat disposed on the display 112 to cover the thin film transistor 111.
  • an arc-shaped convex area is designed on the corresponding photomask on the side of the connection pad 116 near the display area 112, and then formed by exposure and development.
  • the flat layer is the whole of the arc-shaped protrusion 118 of the same material, or forms a part of the arc-shaped protrusion 118, and the other part is made of the same material at the same time as one or more layers of the thin film transistor 111.
  • Step S2 Form a CF substrate 120, which includes a second glass substrate 121, a light-shielding layer (ie black matrix, BM) 122, a color filter layer 123, a protective layer 124, and a second common The common electrode 125.
  • the light shielding layer 122 is used to: (1) shield the area outside the color filter layer 123 to prevent the backlight from leaking light, thereby increasing the contrast of the thin film transistor liquid crystal display 100 (2) prevent the backlight The light source passes through the three primary colors of the adjacent red, blue, and green photoresist in the color filter film layer to be mixed to improve the color purity of the thin film transistor liquid crystal display 100, (3) prevent light from causing TFT malfunction and The working parameters change.
  • the shading layer 122 can be black resin, single-layer chromium (Cr) or double-layer chromium (Cr)/chromium oxide (CrOx).
  • the black resin shading layer is mixed with inorganic or organic black materials.
  • the photolithographic etching technique Photolithographic Etching Pattern, PEP
  • the inorganic black material can be carbon black (carbon black), titanium black, manganese dioxide or a combination thereof, but not limited thereto.
  • Single-layer chromium (Cr) or double-layer chromium (Cr)/chromium oxide (CrOx) shading layer is formed by sputtering chromium (Cr) and/or chromium oxide (CrOx) on the glass substrate and patterning it using PEP technology of.
  • the color filter layer 123 includes photoresists of the three primary colors of red, blue, and green. The red, blue, and green photoresist can be in a triangular configuration, a square configuration, a linear configuration, or a yardseck configuration.
  • the color filter film layer 123 can be made using a dyeing method, an etching method, a printing method, a dry film method, or an electroplating method, but is not limited thereto.
  • the protective layer 124 is used to prevent contaminants on the color filter film layer 123 from entering the liquid crystal and cause malfunctions, and to flatten the light shielding layer 122 and the color filter film layer 123 to facilitate further fabrication on them
  • the second common electrode 125 may be made of polymer materials such as epoxy resin, acrylic resin, polyimide resin, and polyvinyl alcohol resin.
  • the second common electrode 125 is a transparent conductive film composed of indium tin oxide (indium tin oxide). ITO may be plated on the protective layer 124 by sputtering to form the second common electrode 125.
  • the TFT array substrate 110 may be a COA (CF On Array) type TFT array substrate, that is, the color filter layer 123 is disposed on the display area 112 of the TFT array substrate 110.
  • COA CF On Array
  • an arc-shaped convex area is designed on the corresponding mask on the side of the connection pad 116 near the display area 112, and then through exposure and development
  • the whole or part of the arc-shaped protrusion 118 of the same material as the color filter film layer 123 is formed.
  • the whole or part of the arc-shaped protrusion 118 can be composed of red, blue or green photoresist.
  • the TFT array substrate 110 may be a BOA (BM On Array) type TFT array substrate, that is, the light-shielding layer (ie, black matrix (black matrix)). matrix, BM)) 122 is arranged on the TFT array substrate 110.
  • the light-shielding layer 122 When preparing the light-shielding layer 122 on the TFT array substrate 110, an arc-shaped convex area is designed on the corresponding photomask on the side of the connection pad 116 near the display area 112, and then formed by exposure and development.
  • the light shielding layer 122 is the whole or a part of the arc-shaped protrusion 118 made of the same material.
  • the whole or part of the arc-shaped protrusion 118 may be composed of black resin, a single layer of chromium (Cr) or a double layer of chromium (Cr)/chromium oxide (CrOx).
  • Step S3 apply an alignment liquid on a surface of the CF substrate 120 and the TFT array substrate 110, and then cure to form an alignment film (alignment film). film) 150 and align it.
  • the alignment liquid is applied, the arc-shaped protrusion 118 guides the alignment liquid to flow around the connecting pad 116.
  • the alignment film 150 is used to provide a pretilt angle so that the alignment direction of the liquid crystal 130 between the CF substrate 120 and the TFT array substrate 110 is consistent.
  • the alignment liquid may include polyamic acid, polyimide (PI), polyimide-polyamic acid polymer or a combination thereof, as well as DMA (N,N-dimethylacetamide) and NMP ( 1–N–2 Methylpyrrolidone) and other organic solvents.
  • the alignment liquid can be coated by inkjet printing (inkjet printing). After the alignment liquid is coated, the organic solvent is volatilized by pre-bake, and then the polyamic acid, polyimide and/or polyamide is made by high-temperature baking (post-bake). The imine-polyamic acid polymer is polymerized to form the alignment film 150.
  • the alignment can be performed using a directional rubbing alignment technology, that is, rubbing the alignment film 150 with a roller covered with a fleece cloth such as cotton, nylon or polyester.
  • Step S4 Coating a sealant 140 on the non-display area 114 of the TFT array substrate 110, but not coating the arc-shaped protrusion 118.
  • the sealant 140 is mixed with several first ball spacers (ball Spacer 142, which has the same radius, is used to maintain the uniformity of the box thickness.
  • Step S5 A conductive particle 144 is arranged on the connection pad 116 of the TFT array substrate 110 in a dotted manner.
  • the conductive particle 144 can be a microsphere with one or more layers of metal uniformly coated on the surface.
  • the metal may be gold, silver, copper, tin, or a combination thereof, but is not limited thereto.
  • the microspheres may be made of silica or polymers such as plastics. All conductive particles have the same radius to maintain the uniformity of the cell thickness.
  • Step S6 Fill the liquid crystal 130 in the display area 112 of the TFT array substrate 110.
  • the liquid crystal 130 may be a nematic liquid crystal (nematic), a smectic liquid crystal (smectic), a cholesteric liquid crystal or a combination thereof.
  • the liquid crystal 130 may be doped with an optical active agent.
  • the filling is to use one drop filling (ODF) to drop liquid crystal on the display area 112 of the TFT array substrate 110.
  • ODF drop filling
  • Step S7 bonding the CF substrate 120 to the TFT array substrate 110, irradiating the frame with ultraviolet light to cure the frame, and then performing thermal curing.
  • the liquid crystal 130 is sealed between the TFT array substrate 110 and the CF substrate 120, and the second common electrode 125 is brought into contact with the conductive particles 144.
  • the common voltage generated by the common voltage generating circuit can be transmitted to the second common electrode 125 of the CF substrate 120 through the connection pad 116 and the conductive particles 144.
  • the signal on the TFT array substrate 110 can be conducted to the CF substrate 120 via the connection pad 116 and the conductive particles 144.
  • the liquid crystal in order to prevent the distance between the TFT array substrate 110 and the CF substrate 120 (that is, the cell thickness) from changing due to pressure, the liquid crystal should be placed on the TFT array before the liquid crystal is dropped in step 6.
  • Several second spherical spacers 160 are scattered on the display area 112 of the substrate 110. The second spherical spacer 160 may be in contact with the two substrates 110 and 120 after the TFT array substrate 110 and the CF substrate 120 are assembled, so as to maintain the thickness of the cell.
  • the TFT array substrate 110 may be a POA (PS on Array) type TFT array substrate, that is, a plurality of columnar optical spacers (photo spacer, PS) is arranged on the display area of the TFT array substrate 110 to replace the second spherical spacer 160.
  • a POA PS on Array
  • an arc-shaped convex area is designed on the corresponding photomask on the side of the connection pad 116 near the display area 112, and then formed by exposure and development.
  • the cylindrical optical spacer is the same as the whole or part of the arc-shaped protrusion 118 made of material.
  • the arc-shaped protrusion 118 is connected to one or more of the thin film transistors, and/or the flat layer, the columnar optical spacer, the black matrix and the color filter One or more of them are multi-layer structures made of the same material at the same time.
  • the thin film transistor liquid crystal display and its manufacturing method provided by the present disclosure are based on the surface tension characteristics of the circular via hole that bypasses the TFT when the alignment liquid such as polyimide is diffused on the TFT array substrate.
  • an arc-shaped protrusion is provided with an arc radius greater than or equal to the connection pad. The width is used to guide the alignment solution to flow around the connection pads when the alignment solution is applied to the display area of the TFT array substrate, so as to prevent the alignment solution from covering the connection pads in the non-display area.
  • the thin film transistor liquid crystal display provided by the present disclosure and the manufacturing method thereof can solve the problem that the alignment liquid is easily diffused when the alignment liquid is sprayed on the display area of the TFT array substrate when the narrow frame product with a frame (non-display area) width less than 2.4 mm
  • the connection pad in the non-display area causes poor conduction between the connection pad and the conductive particles, which in turn causes a technical problem of abnormal display.
  • the arc-shaped protrusions can be made at the same time with one or more layers of the TFT array substrate, without the need for a new manufacturing process.

Abstract

一种薄膜晶体管液晶显示器（100），其包含一第一基板（10）。所述第一基板（10）包含一显示区（112）及围绕所述显示区（112）的一非显示区（114）。所述显示区（112）设有一薄膜晶体管（111）。所述非显示区（114）设有一第一公共电极（30）、一连接垫（116）及一弧形凸起（118）。所述连接垫（116）设置于非显示区（114）远离显示区（112）的一侧，且设置于所述第一公共电极（30）上，用以连接于一公共电压产生电路。所述弧形凸起（118）设置于非显示区（114）近显示区（112）的一侧。薄膜晶体管液晶显示器（100）藉由弧形凸起（118）的设置避免了在第一基板（10）的显示区（112）涂布配向液时，配向液扩散到非显示区（114）的连接垫（116）而导致显示异常。

Description

薄膜晶体管液晶显示器
本申请要求于2019年11月14日提交中国专利局、申请号为201911109731.9、发明名称为“薄膜晶体管液晶显示器”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本揭示涉及薄膜晶体管液晶显示器（thin-film transistor liquid-crystal display，TFT-LCD）技术领域，特别是涉及一种薄膜晶体管液晶显示器。
 背景技术
在现成的薄膜晶体管液晶显示器制程中，为使液晶（liquid crystal）在彩色滤光片（color filter，CF）基板与薄膜晶体管（thin film transistor，TFT）阵列基板间的排列方向一致，会在CF基板及TFT阵列基板对盒前，将配向液涂布在CF基板及TFT阵列基板面向液晶的表面上并进行配向以形成配向膜。喷印（inkjet printing）是印刷配向液的常用工艺，具有印刷效率高及配向液利用率高等优点。然而喷印时，配向液会自由扩散而形成一不规则边缘区域。此不规则边缘区域中的配向液厚度不均，因而需要将不规则边缘区域尽量外扩来降低平均厚度以避免影响盒厚（cell gap）的均一性。
 技术问题
一般而言，不规则边缘区域需扩散至距显示区（active area）边缘1.2-2.4 mm处，才不会影响盒厚的均一性。因此，对于边框（非显示区）宽度小于2.4 mm的窄边框产品，在TFT阵列基板的显示区喷印配向液时，配向液易扩散到设置于非显示区的连接垫（transfer pad）。因配向液具有绝缘性，当配向液覆盖连接垫时，会导致连接垫与导电粒子导通不良，使得TFT阵列基板上的信号无法经由连接垫及导电粒子导通至CF基板的公共电极，进而造成显示异常。
 技术解决方案
为了解决上述配向液易扩散到连接垫的技术问题，本揭示公开一种薄膜晶体管液晶显示器，其包含一第一基板。所述第一基板包含一显示区及围绕所述显示区的一非显示区。所述显示区设有一薄膜晶体管。所述非显示区设有一第一公共电极、一连接垫及一弧形凸起。所述连接垫设置于非显示区远离显示区的一侧，且设置于所述第一公共电极上，用以连接于一公共电压产生电路。所述弧形凸起设置于非显示区近显示区的一侧。
在一实施例中，所述弧半径大于或等于所述连接垫的宽度。
在一实施例中，所述非显示区还设有一电路，其电连接所述薄膜晶体管与所述第一公共电极。
在一实施例中，所述薄膜晶体管包含一栅电极层、一绝缘层、一有源层及一源漏极层。所述弧形凸起为与所述薄膜晶体管中的一或多层同材料的单层或多层结构。
在一实施例中，所述弧形凸起为由一金属材料、一绝缘材料、一有源材料或其组合所组成的单层或多层结构。
在一实施例中，所述显示区还包含一平坦层、一柱状光学间隙子、一黑色矩阵、一彩色滤光片或其组合。所述弧形凸起为与所述平坦层、柱状光学间隙子、黑色矩阵及彩色滤光片中的一或多者同材料的单层或多层结构。
在一实施例中，所述第一基板还包含一配向膜。所述配向膜仅覆盖所述显示区及所述显示区到所述弧形凸起邻近所述显示区的一侧的区域。
在一实施例中，所述薄膜晶体管液晶显示器还包含一框胶、一第二基板及一导电粒子。所述框胶从所述弧形凸起远离所述显示区的一侧覆盖到非显示区的外侧。所述第二基板包含一第二公共电极。所述第二基板藉由所述框胶与所述第一基板对盒设置。所述导电粒子设置在所述第一基板的连接垫上，且与所述第二公共电极电连接。
在一实施例中，所述框胶掺有数个第一球状隔垫物，用于保持盒厚。
在一实施例中，所述显示区设有数个第二球状隔垫物。所述数个第二球状隔垫物在所述第一基板及第二基板对盒后与所述第一基板及第二基板接触，用于保持盒厚。
 有益效果
本揭示所提供的薄膜晶体管液晶显示器及其制造方法，在TFT阵列基板的非显示区内于所述连接垫近显示区的一侧，即在配向液扩散到连接垫方向上，设置一弧形凸起且其弧半径大于或等于所述连接垫的宽度，用以在TFT阵列基板的显示区涂布配向液时引导配向液绕开连接垫流动，以避免配向液覆盖到非显示区的连接垫。因此，本揭示所提供的薄膜晶体管液晶显示器及其制造方法可解决边框（非显示区）宽度小于2.4 mm的窄边框产品在喷印配向液于TFT阵列基板的显示区时，配向液易扩散到非显示区的连接垫上而导致连接垫与导电粒子导通不良，进而造成显示异常的技术问题。再者，所述弧形凸起可随TFT阵列基板中的一或多层膜层同时制成，而无需新增制程。
 附图说明
为了更清楚地说明本申请实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本揭示实施例的薄膜晶体管液晶显示器的示意图。
图2是本揭示实施例的薄膜晶体管液晶显示器的局部剖面图。
图3是本揭示实施例的薄膜晶体管液晶显示器的制造方法的流程图。
 本发明的实施方式
请参阅图1及图2。本揭示所提供的薄膜晶体管液晶显示器100包含一TFT阵列基板110、一CF基板120、液晶130、一框胶140及一导电粒子144。所述TFT阵列基板110包含一第一玻璃基板10。所述第一玻璃基板10区分为一显示区112及围绕所述显示区112的一非显示区114。所述第一玻璃基板10在所述显示区112上设有数个薄膜晶体管111。每一薄膜晶体管111包含一栅电极层、一绝缘层、一有源层及一源漏极层。所述第一玻璃基板10在所述非显示区114上设有一驱动电路层20、一第一公共电极（common electrode）30、一连接垫116及一弧形凸起118。所述驱动电路层20设置在所述第一玻璃基板10上。所述第一公共电极30设置在所述驱动电路层20上。所述连接垫116设置于所述第一公共电极30上，用以连接于一公共电压产生电路。所述驱动电路层30包含数个驱动电路，用以电连接所述薄膜晶体管111及所述第一公共电极30。所述公共电压产生电路用于产生一公共电压。所述公共电压透过所述连接垫116及所述第一公共电极30传送到所述驱动电路，使所述驱动电路产生驱动讯号至所述薄膜晶体管111，以控制所述薄膜晶体管111的开关。所述弧形凸起118邻近所述连接垫116近显示区112的一侧且其弧半径大于或等于所述连接垫116的宽度。所述弧形凸起118的高度可为2-4 um，所述弧形凸起118的宽度可为5-50 um，但不限于此，可依工艺精度制定。所述弧形凸起118可为在制备所述薄膜晶体管111中的一或多层时藉由在相对应的光罩上设计弧形凸起区域所制成的，使所述弧形凸起118具有与所述薄膜晶体管111中的一或多层同材料的单层或多层结构，藉此减少生产成本。换句话说，所述弧形凸起118可由一金属材料、一绝缘材料、一有源材料或其组合所组成的单层或多层结构。例如：所述弧形凸可为与栅电极层同材料的单层结构，亦可为与有源层及源漏极层同材料的双层结构。
在一实施例中，TFT阵列基板110还包括一平坦层（overcoat），设置在显示区112上，覆盖所述薄膜晶体管111。所述弧形凸起118的整体或一部分是与所述平坦层同材料。
在一实施例中，所述CF基板120包含一第二玻璃基板121、一遮光层（即黑色矩阵（black matrix，BM））122、一彩色滤光膜层123、一保护层124及一第二公共电极125。所述遮光层122是用于：（1）遮蔽彩色滤光膜层123以外的区域，以防止背光源漏光，进而提高薄膜晶体管液晶显示器100的对比度（2）防止背光源透过彩色滤光膜层中相邻的红色、蓝色、绿色光阻所产生的三原色的光发生混色，以提高薄膜晶体管液晶显示器100的色纯度，（3）防止光造成TFT误动作及工作参数发生变化。所述遮光层122可为黑色树脂、单层铬（Cr）或双层铬（Cr）/氧化铬（CrOx）。所述黑色树脂为掺有无机或有机的黑色颜料的树脂。无机黑色料可为碳黑（carbon black）、钛黑（titanium black）、二氧化锰或其组合，但不限于此。所述彩色滤光膜层123包含红、蓝、绿三原色的光阻。红色、蓝色、绿色的光阻可为三角形配置、正方形配置、线形配置或码赛克形配置。所述保护层124是用于防止彩色滤色膜层123上的污染物进入液晶而引发误动作，以及对所述遮光层122及彩色滤色膜层123进行平坦化以方便在其上面进一步制作所述第二公共电极125。所述保护层124可由诸如环氧树脂、压克力树脂、聚亚酰胺树脂及聚乙烯醇树脂等高分子材料所制成。所述第二公共电极125为一由铟锡氧化物组成的透明导电膜。
在一实施例中，TFT阵列基板110可为一COA（CF On Array）型TFT阵列基板，即所述彩色滤光膜层123是设置在TFT阵列基板110的显示区112上，且所述弧形凸起118的整体或一部分是与所述彩色滤光膜层123同材料且在同时间制成。换句话说，所述弧形凸起118的整体或一部分可由红色、蓝色或绿色的光阻所组成。
在一实施例中，TFT阵列基板110可为一BOA（BM On Array）型TFT阵列基板，即所述遮光层（即黑色矩阵（black matrix，BM）125是设置在TFT阵列基板110上，且所述弧形凸起118的整体或一部分是与所述遮光层同材料且在同时间制成。换句话说，所述弧形凸起118的整体或一部分可由黑色树脂、单层铬（Cr）或双层铬（Cr）/氧化铬（CrOx）所组成。
在一实施例中所述TFT阵列基板110及所述CF基板120是藉由所述框胶140对盒设置。所述框胶140是涂布在所述TFT阵列基板110的非显示区114内弧形凸起118远离显示区112的一侧。框胶140掺有数个第一球状隔垫物142，其具有相同的半径，用于保持盒厚的均一性。所述导电粒子144设置在所述TFT阵列基板110的连接垫116上并与所述CF基板120的第二公共电极125相接触，使得所述公共电压产生电路所产生的公共电压可透过所述连接垫116及所述导电粒子144传送至所述CF基板120的第二公共电极125。换句话说，所述TFT阵列基板110上的信号能经由所述连接垫116及所述导电粒子144导通至所述CF基板120。所述导电粒子144可为表面均匀涂覆有一或多层金属的一微球。所述金属可为金、银、铜、锡或其组合，但不限于此。所述微球可由二氧化硅或诸如塑料的聚合物所制成。所有导电粒子具有相同的半径，以保持盒厚的均一性。
在一实施例中，所述液晶130设置在所述TFT阵列基板110的显示区112内、密封于所述CF基板120及所述TFT阵列基板110间。所述液晶130可为向列型液晶、层列型液晶、胆固醇型液晶或其组合。所述液晶130可掺有一旋光剂。所述TFT阵列基板110及所述CF基板120相对的表面上另设有一配向膜150。所述配向膜是用于提供一个预倾角，以使所述液晶130在所述CF基板120及所述TFT阵列基板110间的排列方向一致。所述配向膜150可为聚酰亚胺。
在一实施例中，为避免所述TFT阵列基板110及所述CF基板120间的距离（即盒厚）因受压力而改变，在所述TFT阵列基板110的显示区112上散布有数个第二球状隔垫物160。所述球状隔垫物160与所述TFT阵列基板110及所述CF基板120接触，从而保持盒厚。
在一实施例中，TFT阵列基板110可为一POA（PS on Array）型TFT阵列基板，即将数个柱状光学间隙子（photo spacer，PS）设置在TFT阵列基板110的显示区上，以取代所述第二球状隔垫物160，且所述弧形凸起118的整体或一部分是与所述柱状光学间隙子同材料且在同时间制成。
在一实施例中，所述弧形凸起118是与所述薄膜晶体管111中的一或多层，及/或所述平坦层、所述柱状光学间隙子、所述黑色矩阵及彩色滤光片中的一或多者，以同材料在同时间制成的多层结构。
请参阅图1-3，其中图3是本揭示实施例的薄膜晶体管液晶显示器100的制造方法的流程图。本揭示实施例的薄膜晶体管液晶显示器100的制造方法包含下列步骤。
步骤S1：形成一TFT阵列基板110，其包含一第一玻璃基板10。所述第一玻璃基板10区分为一显示区112及围绕所述显示区112的一非显示区114。所述第一玻璃基板10在所述显示区112上设有数个薄膜晶体管111。每一薄膜晶体管111包含一栅电极层、一绝缘层、一有源层及一源漏极层。所述第一玻璃基板10在所述非显示区114上设有一驱动电路层20、一第一公共电极30、一连接垫116及一弧形凸起118。所述驱动电路层20设置在所述第一玻璃基板10上。所述第一公共电极30设置在所述驱动电路层20上。所述连接垫116设置于所述第一公共电极30上，用以连接于一公共电压产生电路。所述驱动电路层30包含数个驱动电路，用以电连接所述薄膜晶体管111及所述第一公共电极30。所述公共电压产生电路用于产生一公共电压。所述公共电压透过所述连接垫116及所述第一公共电极30传送到所述驱动电路，使所述驱动电路产生驱动讯号至所述薄膜晶体管111，以控制所述薄膜晶体管111的开关。所述弧形凸起118邻近所述连接垫116近显示区112的一侧且其弧半径大于或等于所述连接垫116的宽度。所述弧形凸起118的高度可为2-4 um，所述弧形凸起118的宽度可为5-50 um，但不限于此，可依工艺精度制定。所述弧形凸起118可为在制备所述薄膜晶体管111中的一或多层时藉由在相对应的光罩上设计弧形凸起区域所制成的，使所述弧形凸起118具有与所述薄膜晶体管111中的一或多层同材料的单层或多层结构阵列，藉此减少生产成本。换句话说，所述弧形凸起118可由一金属材料、一绝缘材料、一有源材料或其组合所组成。例如：在制备所述所述薄膜晶体管111阵列的栅电极层时，在相对应的光罩上于所述连接垫116近显示区112的一侧设计一弧形凸起区域，再通过曝光及显影形成与栅电极层同材料及同时制成的单层结构的弧形凸起118。换句话说，所述弧形凸起118可为由一金属材料所组成的单层结构。又，例如：在制备所述薄膜晶体管111的有源层时，在相对应的光罩上设计一弧形凸起区域，再通过曝光及显影形成弧形凸起118的一部分，且在制备源漏极层时，在相对应的光罩上设计一弧形凸起区域，再通过曝光及显影形成弧形凸起118的另一部分。藉此形成具有与有源层及源漏极层同材料且同时间制成的双层结构的弧形凸起118。换句话说，所述弧形凸起118可为由一金属材料及一有源材料所组成的双层结构。
在一实施例中，TFT阵列基板110还包括一平坦层（overcoat），设置显示112上，覆盖所述薄膜晶体管111。在TFT阵列基板110上制备所述平坦层时，在相对应的光罩上于所述连接垫116近显示区112的一侧设计一弧形凸起区域，再通过曝光及显影形成与所述平坦层同材料的所述弧形凸起118整体，或是形成所述弧形凸起118的一部分，其它部份为与所述薄膜晶体管111中的一或多层以同材料在同时间制成的单层或多层结构。
步骤S2：形成一CF基板120，其包含一第二玻璃基板121、一遮光层（即黑色矩阵（black matrix，BM）122、一彩色滤光膜层123、一保护层124及一第二公共电极（common electrode）125。所述遮光层122是用于：（1）遮蔽彩色滤光膜层123以外的区域，以防止背光源漏光，进而提高薄膜晶体管液晶显示器100的对比度（2）防止背光源透过彩色滤光膜层中相邻的红色、蓝色、绿色光阻所产生的三原色的光发生混色，以提高薄膜晶体管液晶显示器100的色纯度，（3）防止光造成TFT误动作及工作参数发生变化。所述遮光层122可为黑色树脂、单层铬（Cr）或双层铬（Cr）/氧化铬（CrOx）。黑色树脂遮光层是将掺有无机或有机的黑色料的树脂涂布于玻璃基板后，利用微影蚀刻技术（Photolithographic Etching Pattern, PEP）予以图案化形成矩阵图案。无机黑色料可为碳黑（carbon black）、钛黑（titanium black）、二氧化锰或其组合，但不限于此。单层铬（Cr）或双层铬（Cr）/氧化铬（CrOx）遮光层是将铬（Cr）及/或氧化铬（CrOx）溅镀于玻璃基板后，利用PEP技术予以图案化而形成的。所述彩色滤光膜层123包含红、蓝、绿三原色的光阻。红色、蓝色、绿色的光阻可为三角形配置、正方形配置、线形配置或码赛克形配置。所述彩色滤光膜层123可使用染色法、蚀刻法、印刷法、干膜法或电着法制成，但不限于此。所述保护层124是用于防止彩色滤色膜层123上的污染物进入液晶而引发误动作，以及对所述遮光层122及彩色滤色膜层123进行平坦化以方便在其上面进一步制作所述第二公共电极125。所述保护层124可由诸如环氧树脂、压克力树脂、聚亚酰胺树脂及聚乙烯醇树脂等高分子材料所制成。所述第二公共电极125为一由铟锡氧化物（indiumtin oxide，）组成的透明导电膜。可藉由溅射法（sputtering）将ITO镀于所述保护层124上，以形成所述第二公共电极125。
在一实施例中，TFT阵列基板110可为一COA（CF On Array）型TFT阵列基板，即所述彩色滤光膜层123是设置在TFT阵列基板110的显示区112上。在TFT阵列基板110上制备所述彩色滤光膜层123时，在相对应的光罩上于所述连接垫116近显示区112的一侧设计一弧形凸起区域，再通过曝光及显影形成与所述彩色滤光膜层123同材料的所述弧形凸起118的整体或一部分。换句话说，所述弧形凸起118的整体或一部分可由红色、蓝色或绿色的光阻所组成。
在一实施例中，TFT阵列基板110可为一BOA（BM On Array）型TFT阵列基板，即所述遮光层（即黑色矩阵（black matrix，BM））122是设置在TFT阵列基板110上。在TFT阵列基板110上制备所述遮光层122时，在相对应的光罩上于所述连接垫116近显示区112的一侧设计一弧形凸起区域，再通过曝光及显影形成与所述遮光层122同材料的所述弧形凸起118的整体或一部分。换句话说，所述弧形凸起118的整体或一部分可由黑色树脂、单层铬（Cr）或双层铬（Cr）/氧化铬（CrOx）所组成。
步骤S3：涂布一配向液在所述CF基板120及所述TFT阵列基板110的一表面上，再固化以形成一配向膜（alignment film）150并进行配向。在涂布配向液时，所述弧形凸起118引导所述配向液绕开所述连接垫116流动。所述配向膜150是用于提供一个预倾角（pretilt angle），以使液晶130在CF基板120及TFT阵列基板110间的排列方向一致。所述配向液可包含聚酰胺酸、聚酰亚胺（Polyimide，PI）、聚酰亚胺-聚酰胺酸聚合物或其组合，以及DMA（N,N–二甲基乙酰胺）和NMP（1–N–2甲基吡咯烷酮）等有机溶剂。所述配向液的涂布可藉由喷印（inkjet printing）来进行。所述配向液在涂布后，先藉由预烘烤（pre-bake）将有机溶剂挥发，再藉由高温烘烤（post-bake）使聚酰胺酸、聚酰亚胺及/或聚酰亚胺-聚酰胺酸聚合物聚合形成配向膜150。所述配向可使用定向摩擦配向技术进行，即：利用包覆着诸如棉布、尼龙或聚脂类的绒毛布的滚筒刷磨（rubbing）配向膜150。
步骤S4：涂布一框胶140在所述TFT阵列基板110的非显示区114上，但未涂布到所述弧形凸起118。框胶140掺有数个第一球状隔垫物（ball spacer）142，其具有相同的半径，用于保持盒厚的均一性。
步骤S5：以打点方式设置一导电粒子144在所述TFT阵列基板110的连接垫116上。所述导电粒子144可为表面均匀涂覆有一或多层金属的一微球。所述金属可为金、银、铜、锡或其组合，但不限于此。所述微球可由二氧化硅或诸如塑料的聚合物所制成。所有导电粒子具有相同的半径，以保持盒厚的均一性。
步骤S6：填充液晶130于所述TFT阵列基板110的显示区112内。所述液晶130可为向列型液晶（nematic）、层列型液晶（smectic）、胆固醇型（cholesteric）液晶或其组合。所述液晶130可掺有一旋光剂。所述填充是使用滴下式注入法（one drop filling，ODF）将液晶滴在TFT阵列基板110的显示区112上。
步骤S7：将所述CF基板120贴合至所述TFT阵列基板110，再以紫外线光照射使框腋固化后，再进行热固化。藉此，使所述液晶130密封于所述TFT阵列基板110及所述CF基板120间，并使所述第二公共电极125接触所述导电粒子144。所述公共电压产生电路所产生的公共电压可透过所述连接垫116及所述导电粒子144传送至所述CF基板120的第二公共电极125。换句话说，所述TFT阵列基板110上的信号能经由所述连接垫116及所述导电粒子144导通至所述CF基板120。
在一实施例中，为避免所述TFT阵列基板110及所述CF基板120间的距离（即盒厚）因受压力而改变，而在步骤6滴入液晶前，先在在所述TFT阵列基板110的显示区112上散布数个第二球状隔垫物160。所述第二球状隔垫物160可在所述TFT阵列基板110及所述CF基板120对盒后与所述两基板110及120接触，从而保持盒厚。
在一实施例中，TFT阵列基板110可为一POA（PS on Array）型TFT阵列基板，即将数个柱状光学间隙子（photo spacer，PS）设置在TFT阵列基板110的显示区上，以取代所述第二球状隔垫物160。在TFT阵列基板110上制备所述柱状光学间隙子时，在相对应的光罩上于所述连接垫116近显示区112的一侧设计一弧形凸起区域，再通过曝光及显影形成与所述柱状光学间隙子同材料的所述弧形凸起118的整体或一部分。
在一实施例中，所述弧形凸起118是与所述薄膜晶体管中的一或多层，及/或所述平坦层、所述柱状光学间隙子、所述黑色矩阵及彩色滤光片中的一或多者，以同材料在同时间制成的多层结构。
综合以上，本揭示所提供的薄膜晶体管液晶显示器及其制造方法是根据诸如聚酰亚胺的配向液在TFT阵列基板上扩散时有绕过TFT的圆形过孔（via hole）的表面张力特性，在TFT阵列基板的非显示区内于所述连接垫近显示区的一侧，即在配向液扩散到连接垫方向上，设置一弧形凸起且其弧半径大于或等于所述连接垫的宽度，用以在TFT阵列基板的显示区涂布配向液时引导配向液绕开连接垫流动，以避免配向液覆盖到非显示区的连接垫。因此，本揭示所提供的薄膜晶体管液晶显示器及其制造方法可解决边框（非显示区）宽度小于2.4 mm的窄边框产品在喷印配向液于TFT阵列基板的显示区时，配向液易扩散到非显示区的连接垫上而导致连接垫与导电粒子导通不良，进而造成显示异常的技术问题。再者，所述弧形凸起可随TFT阵列基板中的一或多层同时制成，而无需新增制程。
虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (10)

  1. 一种薄膜晶体管液晶显示器，其包含：
    一第一基板，其包含一显示区及围绕所述显示区的一非显示区；
    其中，所述显示区设有一薄膜晶体管，所述非显示区设有一第一公共电极、一连接垫及一弧形凸起；且
    其中，所述连接垫设置于非显示区远离显示区的一侧，且设置于所述第一公共电极上，用以连接于一公共电压产生电路；以及所述弧形凸起设置于非显示区近显示区的一侧。
  2. 根据权利要求1所述的薄膜晶体管液晶显示器，其中所述弧半径大于或等于所述连接垫的宽度。
  3. 根据权利要求1所述的薄膜晶体管液晶显示器，其中所述非显示区还设有一电路，其电连接于所述薄膜晶体管与所述第一公共电极。
  4. 根据权利要求1所述的薄膜晶体管液晶显示器，其中所述薄膜晶体管包含一栅电极层、一绝缘层、一有源层及一源漏极层，所述弧形凸起为与所述薄膜晶体管中的一或多层同材料的单层或多层结构。
  5. 根据权利要求1所述的薄膜晶体管液晶显示器，其中所述弧形凸起为由一金属材料、一绝缘材料、一有源材料或其组合所组成的单层或多层结构。
  6. 根据权利要求1所述的薄膜晶体管液晶显示器，其中所述显示区还包含一平坦层、一柱状光学间隙子、一黑色矩阵、一彩色滤光片或其组合，所述弧形凸起为与所述平坦层、柱状光学间隙子、黑色矩阵及彩色滤光片中的一或多者同材料的单层或多层结构。
  7. 根据权利要求1所述的薄膜晶体管液晶显示器，其中所述第一基板还包含一配向膜，其仅覆盖所述显示区及所述显示区到所述弧形凸起邻近所述显示区的一侧的区域。
  8. 根据权利要求1所述的薄膜晶体管液晶显示器，其还包含：
    一框胶，从所述弧形凸起远离所述显示区的一侧覆盖到非显示区的外侧；
    一第二基板，其包含一第二公共电极，且其藉由所述框胶与所述第一基板对盒设置；以及
    一导电粒子，设置在所述第一基板的连接垫上，且与所述第二公共电极电连接。
  9. 根据权利要求8所述的薄膜晶体管液晶显示器，其中所述框胶掺有数个第一球状隔垫物，用于保持盒厚。
  10. 根据权利要求8所述的薄膜晶体管液晶显示器，其中所述显示区设有数个第二球状隔垫物，其在所述第一基板及第二基板对盒后与所述第一基板及第二基板接触，用于保持盒厚。
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