WO2021049380A1 - フィルムコンデンサ素子 - Google Patents

フィルムコンデンサ素子 Download PDF

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Publication number
WO2021049380A1
WO2021049380A1 PCT/JP2020/033123 JP2020033123W WO2021049380A1 WO 2021049380 A1 WO2021049380 A1 WO 2021049380A1 JP 2020033123 W JP2020033123 W JP 2020033123W WO 2021049380 A1 WO2021049380 A1 WO 2021049380A1
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WIPO (PCT)
Prior art keywords
film
capacitor element
film capacitor
shaped metal
metal layer
Prior art date
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Ceased
Application number
PCT/JP2020/033123
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English (en)
French (fr)
Japanese (ja)
Inventor
中尾　吉宏
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Kyocera Corp
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Kyocera Corp
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Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to US17/641,567 priority Critical patent/US12057269B2/en
Priority to JP2021545243A priority patent/JP7663305B2/ja
Priority to EP20863389.1A priority patent/EP4030450A4/en
Priority to CN202080064725.0A priority patent/CN114556504B/zh
Publication of WO2021049380A1 publication Critical patent/WO2021049380A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/228—Terminals
    • H01G4/232—Terminals electrically connecting two or more layers of a stacked or rolled capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H01G4/012—Form of non-self-supporting electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H01G4/015—Special provisions for self-healing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/14—Organic dielectrics
    • H01G4/18—Organic dielectrics of synthetic material, e.g. derivatives of cellulose
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/32—Wound capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/14—Organic dielectrics

Definitions

  • This disclosure relates to film capacitor elements.
  • the film capacitor is formed by winding or stacking a plurality of metallized films in which a metal film to be an electrode is vapor-deposited on the surface of a dielectric film made of polypropylene resin, for example.
  • the laminated film capacitor cuts the metal film at the same time as cutting the dielectric film when cutting the laminated body in which the metallized film is laminated to a required size (capacity). At the end face), insulation defects may occur in which the metal films come into contact with each other.
  • Patent Document 1 describes in a metallized film constituting a film capacitor element (core), an exposed portion (gap strip) on the surface of a groove-shaped or band-shaped film having a constant width, which is called an insulation margin and has no metal film formed.
  • a configuration has been proposed in which the withstand voltage (withstand pressure) of the cut surface of the above-mentioned laminated body (element) is improved by providing a bent portion oblique to the parallel direction in which each insulation margin extends. ..
  • the laminated film capacitor described in Patent 1 Document 1 is required to be a laminated film capacitor element in which the loss of capacitance near the cut surface in the film laminate is large and therefore the loss of capacitance is small. ing.
  • a metal layer is disposed on one surface, and an edge insulating region continuous in a second direction orthogonal to the first direction is provided on one edge of the one surface in the first direction.
  • a plurality of dielectric films provided with the above are laminated by reversing the direction of the first direction on the one surface by 180 ° so that the positions of the edge insulating regions in the plan view overlap with each other. It includes a rectangular film laminate and a first metal electrode and a second metal electrode formed on each of the pair of end faces of the film laminate in the first direction.
  • the dielectric film having the metal layer electrically connected to at least the first metal electrode is provided between the plurality of strip-shaped metal layers extending in the first direction and the strip-shaped metal layers.
  • the film capacitor element of the present disclosure is a groove portion continuous in the film lamination direction that separates the film laminate and the first metal electrode from at least one of the pair of end faces of the film laminate in the second direction. It is characterized by having.
  • the film capacitor element 10 of the embodiment is a dielectric film 1 having a plurality of strip-shaped metal layers (films) 3 continuous along a first direction (x direction in the drawing) on the surface of the film as shown in FIG. 1A.
  • a plurality of dielectric films 2 are alternately laminated.
  • Each band-shaped metal layer 3 becomes an internal electrode of a capacitor after being laminated.
  • the dielectric films 1 and 2 have the same configuration except for the lamination direction in the portions after the partial configuration shown in FIG. 1B, but as shown in FIGS. 1A and 1C, the orientation after lamination can be known.
  • Each band-shaped metal layer 3 is designated with a reference numeral of 1A to 1N for the dielectric film 1 and 2A to 2N for the dielectric film 2 in order from the end.
  • the continuous direction of each of the strip-shaped metal layers 3 formed in parallel is referred to as a first direction (x direction), and the arrangement direction of each of the parallel strip-shaped metal layers 3 (y orthogonal to the x direction).
  • Direction is called the second direction.
  • the stacking direction of the dielectric films 1 and 2 is a third direction (z direction in the drawing) orthogonal to the first direction and the second direction. Details of the laminated film laminate 4 will be described later.
  • Each band-shaped metal layer 3 on the surface of the dielectric films 1 and 2 is formed by metal vapor deposition on the base film (base).
  • a groove-shaped film surface (hereinafter referred to as an insulating margin S), which is also called a small margin, is exposed between the strip-shaped metal layers 3 adjacent to each other in the y-direction, whereby each strip-shaped metal layer 3 is electrically charged. It is in an independently insulated state.
  • each insulation margin S (small margin) is connected to a band-shaped insulation region T called a large margin continuous in the second direction (y direction) on one end side in the first direction (x direction).
  • Examples of the constituent materials of the dielectric films 1 and 2 constituting the film capacitor element 10 include organic resin materials such as polypropylene, polyethylene terephthalate, polyarylate, and cycloolefin polymer.
  • the dielectric films 1 and 2 are laminated by alternately reversing the x-direction directions of the dielectric film 1 and the dielectric films 2 adjacent to the dielectric film 1 in the vertical direction (z direction) by 180 °. That is, the dielectric films 1 and 2 are stacked so that the positions of the strip-shaped insulating regions T at the ends (edges) of the dielectric films 1 and 2 are alternately reversed in the x direction, and the film laminate 4 It is said that.
  • Metal electrodes (hereinafter referred to as metallikons) are formed by thermal spraying on both ends of the film laminate 4 in the x direction.
  • metallikons one of the metallikons formed at both ends in the x direction is called 5A (first metal electrode) and the other is called 5B (second metal electrode), but these are only different in the arrangement position. Yes, there is no difference in configuration.
  • the film capacitor element 10 of the embodiment is an element after the metallikons 5A and 5B are formed, as shown in FIG. 1C, at both ends of the film capacitor element 10 in the y direction (second direction).
  • Grooves 11 for separating the band-shaped metal layer 3 (internal electrode) and the metallikons 5A and 5B (external electrodes) are formed, respectively.
  • two groove portions 11 are provided at each end of the film laminate 4 in the x direction, for a total of four grooves.
  • groove portions 11 are continuous in the film stacking direction (z direction) in a region including an interface (boundary) between the metallikon 5A or 5B and the film laminate 4 or between the metallikon 5A or 5B and the film laminate 4. It is formed as a concave shape. Further, each groove portion 11 is provided so as to open toward the end face of the film laminate 4 in the y direction, and the groove depth D (y direction) of each groove portion 11 from the end face in the y direction is described above. It is larger than the pitch P, which is the interval between the insulation margins S.
  • the film capacitor element 10 includes one or two strip-shaped metal layers 3 located at both ends in the y-direction of the laminated dielectric film 1 among the strip-shaped metal layers 3 shown in FIG. 1C, for example, illustrated.
  • the strip-shaped metal layer 3 located at "1A” and “1B” on the left side and the strip-shaped metal layer 3 located at "1N” and “1M” on the right side of the drawing are separated from the metallikon 5A or 5B by the groove portion 11 and are electrically operated. Is insulated.
  • one or two strip-shaped metal layers 3 located at both ends in the y direction for example, “2N” and “2M” on the left side (not shown in FIG. 1C).
  • the band-shaped metal layer 3 located and the band-shaped metal layer 3 located on the right side "2A” and “2B” (not shown) are electrically insulated from the metallikon 5A or 5B by the groove portion 11.
  • each band-shaped metal layer 3 is linear in the x direction, and the band-shaped metal layer 3 is cut and insulated at both ends in the y direction.
  • the number or number is small. Therefore, the film capacitor of the embodiment has a capacitance near the cut surface (both ends in the y direction) after lamination as compared with the conventional film capacitor using an element having an insulation margin of a bending pattern (see Patent Document 1). Capacity loss is reduced.
  • each groove portion 11 from the end face in the y direction is sufficient if one or two strip-shaped metal layers 3 located at both ends in the y direction are cut and insulated. Therefore, as shown in the upper right of FIG. 1A, the groove depth D of each groove portion 11 should be about 1.0 times (shown Dmin) to 3.0 times (shown Dmax) the pitch P of the insulation margin S. Good.
  • the width of the strip-shaped metal layer 3 located at the end in the y direction that is, in this example, both ends in the y direction regardless of the width P1 in the y direction of 1A, 2A or 1N, 2N that varies due to cutting of the film laminate 4. It is possible to reliably insulate at least one strip-shaped metal layer 3 located in the portion.
  • each groove 11 in the x direction (first direction) is described later because it is related to the internal structure of the film laminate 4.
  • FIGS. 5 to 8 are diagrams schematically explaining the process of manufacturing the film capacitor element of the embodiment.
  • the continuous direction of each band-shaped metal layer 3 formed in parallel is the first direction as in FIG. (The x direction in the figure)
  • the arrangement direction of each of the parallel strip metal layers 3 (y direction orthogonal to the x direction) is orthogonal to the second direction, the first direction, and the second direction
  • the laminating direction of the film is the second.
  • the direction is 3 (z direction in the figure).
  • a dielectric film 1 or a dielectric film 2 having a plurality of strip-shaped metal layers 3 continuous along the x direction is formed on the surface of the film.
  • the dielectric film 1 and the dielectric film 2 only have their orientations changed in the x direction, and have the same configuration.
  • a conventionally known method can be used, such as laminating long dielectric films 1 and 2 on each other and winding them around a cylinder or a cylinder having a polygonal cross section.
  • the virtual line (dashed line) in FIG. 5 indicates a cut line after winding around a cylinder or the like.
  • FIG. 6 is a view of the film laminate 4 cut to a predetermined length as viewed from the cut surface (end surface in the y direction). As shown in FIG. 6, the vertically adjacent dielectric films 1 and 2 are laminated in a state of being slightly displaced (offset state) in the continuous direction (x direction) of the strip-shaped metal layer 3. , The edges of the strip-shaped metal layers 3 are exposed or adjacent to both end faces of the film laminate 4 in the x direction.
  • the insulating layer 12 may be omitted.
  • each of the strip-shaped metal layers 3 on the dielectric films 1 and 2 is electrically connected to either the left or right (x direction) metallikon shown in the drawing, and functions as an internal electrode of the element.
  • 11 (groove depth D in the y direction) is formed at a position where the band-shaped metal layer 3 (internal electrode) and the metallikons 5A and 5B (external electrodes) are separated from each other.
  • two groove portions 11 are provided at the ends in the y direction, for a total of four grooves.
  • the groove portion 11 can be formed into a shape continuous in the stacking direction (z direction) by cutting or cutting. It may be formed into a so-called notch, slit, notch or the like.
  • the groove depth D in the y direction of the groove portion 11 may be larger than the pitch P, which is the interval between the band-shaped metal layers 3 and the interval between the insulation margins S.
  • the depth may be about 1.0 to 3.0 times the pitch P so that one or two strip-shaped metal layers 3 located at both ends in the y direction are insulated. If it exceeds 3.0 times the pitch P, the loss of capacitance at the end increases, so it is preferably less than that.
  • the formation position of the groove portion 11 in the x-direction may be between the metallikon 5A or 5B and the film laminate 4, as in the film capacitor element 70 shown in FIG. 8, as in the film capacitor element 80 shown in FIG. In addition, it may be formed in a region including an interface (boundary) between the metallikon 5A or 5B and the film laminate 4. Further, as in the film capacitor element 90 shown in FIG. 10, the groove portions 11 of both may be formed on the film laminate 4 side at the interface (boundary) between the metallikon 5A or 5B and the film laminate 4.
  • each groove portion 11 is shown in FIG. 2A.
  • FIG. 2B describes the formation positions of each of these groove portions 11 in the x direction with a plan view seen from above of the film capacitor element 20.
  • each of the above-mentioned groove portions 11 has a distance Q between the groove portions 11 and the end portions 31 of the strip-shaped metal layer 3 on the dielectric film 1 located inside the film laminate 4 in the x direction. It is formed on the open outside (metallikon 5A side). As a result, reliable electrical insulation with the internal electrode (belt-shaped metal layer 3) is achieved.
  • the distance Q between the ends 31 and 32 of the band-shaped metal layer 3 may be 200 ⁇ m or more.
  • two groove portions 11 are arranged at the ends in the y direction and two in the x direction, for a total of four grooves, but the groove portions 11 are shown in FIGS. 3A to 3A.
  • the two groove portions 11 may be provided at different ends (corner portions) in the x direction that are diagonal on the xy plane of the film capacitor element 30, or may be provided in the y direction on either side of the x direction. It may be provided at the end (corner).
  • two groove portions 11 are provided at the end portion in the y direction between the film laminate 4 and the metallikon 5A, and one groove portion 11 is provided at the end portion in the y direction between the film laminate 4 and the metallicon 5B. , A total of 3 may be provided.
  • the film laminate 4 has a dielectric film 1 [see FIG. 1A] having a strip-shaped metal layer 3 fractionated by an insulation margin S and the entire surface of a so-called solid pattern having no insulation margin.
  • the groove portion 11 is the end portion 33 of the entire metal layer 3'as shown in FIG. 4B described above. It may be arranged at the end (corner) in the y direction on the right side in the x direction so that there is a gap between the film and the metallic film 5A.
  • each band-shaped metal layer 3 on the dielectric film 1 is electrically connected to the metallikon 5A (first metal electrode) on the right side (x direction) of the drawing, and the entire surface metal layer on the dielectric film 13 is formed. 3'is connected to the metallikon 5B (second metal electrode).
  • the groove portion 11 is formed like the film capacitor elements 30, 40, 50 shown in FIGS. 3A to 3C or the film capacitor element 60 shown in FIGS. 4A, 4B. You can change the number and position.
  • the film capacitor using the film capacitor elements 30, 40, 50, 60 having the groove 11 whose number and position are changed is also equivalent to the film capacitor using the film capacitor elements 10, 20, 70, 80, 90 described above. It plays an effect / function.
  • FIG. 11 is a plan view showing the configuration of the film capacitor element 100 of another embodiment of the present disclosure.
  • the band-shaped metal layer 3 is arranged on one surface, and one edge of the first direction x on the one surface is in a second direction y orthogonal to the first direction x.
  • the dielectric films 1 and 2 provided with the continuous strip-shaped insulating region T are oriented at 180 ° in the first direction x on one surface so that the planar viewing positions of the strip-shaped insulating regions T overlap every other film.
  • the constituent materials of the dielectric films 1 and 2 constituting the film capacitor element 100 may be formed of an organic resin material such as polypropylene, polyethylene terephthalate, polyarylate, or cycloolefin polymer, as in each of the above-described embodiments. ..
  • the dielectric films 1 and 2 having a metal layer at least partially electrically connected to the metallikons 5A and 5B are between the plurality of strip-shaped metal layers 3 extending in the first direction x and each strip-shaped metal layer 3. It has a groove-shaped insulating margin S extending in the first direction x provided in the above.
  • the pair of end faces of the film laminate 4 in the second direction y have groove portions 11 continuous in the film stacking direction z, which separate the film laminate 4 and the metallikons 5A and 5B.
  • each insulation margin S between the band-shaped metal layers 3 is formed at intervals ⁇ L1 from the metallikons 5A and 5B in the first direction x.
  • the insulation margin S is connected to the metallikons 5A and 5B within a range in which the band-shaped metal layer 3 and the metallikons 5A and 5B are separated by the groove portion 11, that is, within the groove depth D in the second direction y of the groove portion 11. It is not, and it may be interrupted halfway. In this case, in the example of FIG.
  • the strip-shaped metal layer 3 located at the reference numerals 1C, 1D, ⁇ , 1K, 1L; 2C, 2D, ⁇ , 2K, 2L has an insulation margin S with respect to the metallikons 5A, 5B. They are connected to each other in regions separated by an interval ⁇ L1. Therefore, if each band-shaped metal layer 3 located in the intermediate portion between the groove portions 11 in the y direction is connected to the metallikon 5A or 5B at least in part, each band-shaped metal layer 3 located in the intermediate portion is connected to the metallikon 5A. Or it is commonly connected to 5B. As a result, even if a connection failure occurs between the plurality of strip-shaped metal layers 3 located in the intermediate portion and each metallikon 5A or 5B, it is possible to prevent the overall capacitance from being lowered.
  • the strip-shaped metal layer 3 located at reference numerals 1C, 1D, ⁇ , 1K, 1L; 2C, 2D, ⁇ , 2K, 2L has an insulation margin S spaced apart from the metallikons 5A, 5B. They are connected to each other in regions separated by ⁇ L1.
  • each band-shaped metal layer 3 located in the intermediate portion between the groove portions 11 in the y direction has at least a part of the band-shaped metal layer 3 electrically connected to the metallikons 5A and 5B, and is therefore located in the intermediate portion. Even if a connection failure occurs between the plurality of strip-shaped metal layers 3 and each metallikon 5A or 5B, it is possible to prevent a decrease in the overall capacitance.
  • one or two strip-shaped metal layers 3 located at both ends in the y direction (second direction) are electrically separated from the metallikon 5A or 5B by the groove 11. Insulated. That is, the loss of capacitance in the vicinity of the cut surface (both ends in the y direction) after lamination is reduced as compared with the conventional film capacitor using an element having an insulation margin of a bending pattern. Therefore, the film capacitor using these film capacitor elements can be a laminated film capacitor with little loss of capacitance at the cut portion.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
PCT/JP2020/033123 2019-09-13 2020-09-01 フィルムコンデンサ素子 Ceased WO2021049380A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US17/641,567 US12057269B2 (en) 2019-09-13 2020-09-01 Film capacitor device
JP2021545243A JP7663305B2 (ja) 2019-09-13 2020-09-01 フィルムコンデンサ素子
EP20863389.1A EP4030450A4 (en) 2019-09-13 2020-09-01 Film capacitor element
CN202080064725.0A CN114556504B (zh) 2019-09-13 2020-09-01 薄膜电容器元件

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2019-167541 2019-09-13
JP2019167541 2019-09-13
JP2020-120219 2020-07-13
JP2020120219 2020-07-13

Publications (1)

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WO2021049380A1 true WO2021049380A1 (ja) 2021-03-18

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PCT/JP2020/033123 Ceased WO2021049380A1 (ja) 2019-09-13 2020-09-01 フィルムコンデンサ素子

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US (1) US12057269B2 (https=)
EP (1) EP4030450A4 (https=)
JP (1) JP7663305B2 (https=)
CN (1) CN114556504B (https=)
WO (1) WO2021049380A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2022210130A1 (https=) * 2021-03-30 2022-10-06

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