WO2021039163A1 - 導電膜付基板、反射型マスクブランク及び反射型マスク、並びに半導体デバイスの製造方法 - Google Patents

導電膜付基板、反射型マスクブランク及び反射型マスク、並びに半導体デバイスの製造方法 Download PDF

Info

Publication number
WO2021039163A1
WO2021039163A1 PCT/JP2020/027298 JP2020027298W WO2021039163A1 WO 2021039163 A1 WO2021039163 A1 WO 2021039163A1 JP 2020027298 W JP2020027298 W JP 2020027298W WO 2021039163 A1 WO2021039163 A1 WO 2021039163A1
Authority
WO
WIPO (PCT)
Prior art keywords
film
conductive film
substrate
reflective mask
upper layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2020/027298
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
真徳 中川
崇 打田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Priority to US17/635,333 priority Critical patent/US12572065B2/en
Priority to KR1020227004851A priority patent/KR20220051172A/ko
Publication of WO2021039163A1 publication Critical patent/WO2021039163A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

Definitions

  • the present invention relates to a reflective mask for use in EUV lithography, and a conductive substrate and a reflective mask blank for manufacturing the reflective mask.
  • the present invention also relates to a method for manufacturing a semiconductor device using a reflective mask.
  • EUV lithography which is an exposure technique using extreme ultraviolet (hereinafter referred to as "EUV") light
  • EUV light refers to light in a wavelength band of a soft X-ray region or a vacuum ultraviolet region, and specifically, light having a wavelength of about 0.2 to 100 nm.
  • a reflective mask has been proposed as a transfer mask used in this EUV lithography. In the reflective mask, a multilayer reflective film for reflecting exposure light is formed on a substrate, and a pattern-forming thin film for absorbing exposure light is formed in a pattern on the multilayer reflective film.
  • the reflective mask is made from a reflective mask blank having a substrate, a multilayer reflective film formed on the substrate, and a pattern forming thin film formed on the multilayer reflective film, to a pattern forming thin film by a photolithography method or the like. Manufactured by forming a pattern.
  • the reflective mask when the reflective mask is set on the mask stage of the exposure apparatus, the reflective mask is fixed by an electrostatic chuck. Therefore, fixing of the substrate by an electrostatic chuck is promoted on the main surface on the back side of the insulating reflective mask blank substrate such as a glass substrate (the main surface on the opposite side to the main surface on which the multilayer reflective film is formed). Therefore, a conductive film (back surface conductive film) is formed.
  • Patent Document 1 describes a mask substrate including a substrate composed of a low thermal expansion substance, at least one substance layer on the front surface side of the substrate, and at least one substance layer on the back surface side of the substrate. .. Further, Patent Document 1 describes that the substance on the back surface side is a metal selected from the group consisting of Mo and Cr.
  • Patent Document 2 describes a substrate with a conductive film used for manufacturing a reflective mask blank for EUV lithography.
  • the conductive film contains chromium (Cr) and nitrogen (N), the average concentration of N in the conductive film is 0.1 at% or more and less than 40 at%, and at least the surface of the conductive film. It is described that the crystal state is amorphous, the sheet resistance value of the conductive film is 27 ⁇ / ⁇ or less, and the surface roughness (Rms) of the conductive film is 0.5 nm or less.
  • an acidic aqueous solution such as SPM cleaning (SPM: sulfuric-acid and hydrogen peroxide mixture) or an alkaline aqueous solution such as SC-1 cleaning (SPM) before applying the resist film on the pattern forming thin film ( Wet washing with a chemical solution) is performed.
  • SPM cleaning sulfuric-acid and hydrogen peroxide mixture
  • SC-1 cleaning SC-1 cleaning
  • a chemical solution an acidic or alkaline aqueous solution, for example, sulfuric acid hydrogen peroxide in the case of SPM cleaning
  • the conductive film used for the reflective mask needs to have resistance to chemicals such as chemicals (referred to as "chemical resistance" in the present specification).
  • the reflective mask is fixed to the exposure apparatus by an electrostatic chuck.
  • the surface roughness (Rms) of the conductive film needs to be small in order to prevent the generation of particles due to the rubbing between the conductive film and the electrostatic chuck.
  • an object of the present invention is to obtain a substrate with a conductive film for producing a reflective mask, which has a conductive film having excellent chemical resistance and a small surface roughness (Rms).
  • Another object of the present invention is to obtain a reflective mask blank and a reflective mask having a conductive film having excellent chemical resistance and a small surface roughness (Rms).
  • the present inventors have found that the chemical resistance of the conductive film can be increased by increasing the crystallinity of the conductive film.
  • the crystalline state of the conductive film is amorphous, the surface roughness of the conductive film can be reduced. That is, in order to reduce the surface roughness of the conductive film, it is necessary to lower the crystallinity of the conductive film, contrary to the case of increasing the chemical resistance of the conductive film.
  • the present inventors have found that a conductive film having a predetermined lower layer and an upper layer can obtain a conductive film having excellent chemical resistance and a small surface roughness (Rms). It came to.
  • the present invention has the following configurations.
  • the configuration 1 of the present invention is a substrate with a conductive film having a conductive film on one of the two main surfaces of the substrate, the conductive film containing chromium, and the conductive film is a conductive film.
  • a conductive film-attached substrate having a structure in which a lower layer and an upper layer are laminated in this order from the substrate side, the lower layer is amorphous, and the upper layer has crystallinity.
  • the configuration 2 of the present invention is a substrate with a conductive film of the configuration 1, wherein the upper layer is made of a material containing nitrogen.
  • Configuration 4 of the present invention is a substrate with a conductive film according to any one of configurations 1 to 3, characterized in that the chromium content of the upper layer is higher than the chromium content of the lower layer.
  • the configuration 6 of the present invention is the substrate with a conductive film of the configuration 5, wherein the upper layer is characterized in that a peak is detected in the range where the diffraction angle 2 ⁇ is 56 degrees or more and 60 degrees or less.
  • the configuration 7 of the present invention is the substrate with a conductive film of the configuration 5 or 6, wherein the upper layer does not detect a peak in the range where the diffraction angle 2 ⁇ is 35 degrees or more and 38 degrees or less.
  • a high refractive index layer and a low refractive index layer are formed on the main surface of the substrate with a conductive film according to any one of configurations 1 to 7 on the side opposite to the side on which the conductive film is formed. It is a substrate with a conductive film, characterized in that a multilayer reflective film in which and is alternately laminated is formed.
  • the configuration 9 of the present invention is a substrate with a conductive film of the configuration 8 characterized in that a protective film is formed on the multilayer reflective film.
  • the configuration 10 of the present invention is a reflective mask blank having a structure in which a multilayer reflective film and a thin film for pattern formation are laminated in this order on one main surface of the substrate, and is on the other main surface of the substrate.
  • the conductive film contains chromium, and the conductive film has a structure in which a lower layer and an upper layer are laminated in this order from the substrate side, the lower layer is amorphous, and the upper layer is ,
  • a reflective mask blank characterized by having crystallinity.
  • the structure 11 of the present invention is a reflective mask blank of structure 10, wherein the upper layer is made of a material containing nitrogen.
  • the structure 12 of the present invention is a reflective mask blank of structure 10 or 11, wherein the lower layer is made of a material containing oxygen.
  • Configuration 13 of the present invention is a reflective mask blank according to any one of configurations 10 to 12, characterized in that the chromium content of the upper layer is higher than the chromium content of the lower layer.
  • the structure 15 of the present invention is a reflective mask blank of the structure 14, characterized in that the upper layer is a peak detected in a range where the diffraction angle 2 ⁇ is 56 degrees or more and 60 degrees or less.
  • the configuration 16 of the present invention is a reflective mask blank of configuration 14 or 15, wherein the upper layer does not detect a peak in the range where the diffraction angle 2 ⁇ is 35 degrees or more and 38 degrees or less.
  • the structure 17 of the present invention is a reflective mask blank according to any one of the structures 10 to 16, characterized in that a protective film is formed between the multilayer reflective film and the pattern forming thin film.
  • the configuration 18 of the present invention is a reflective mask characterized in that a transfer pattern is provided on the pattern-forming thin film of the reflective mask blank according to any one of configurations 10 to 17.
  • the configuration 19 of the present invention is a method for manufacturing a semiconductor device, which comprises a step of exposing and transferring a transfer pattern to a resist film on a semiconductor substrate by using the reflective mask of the configuration 18.
  • a substrate with a conductive film for producing a reflective mask which has a conductive film having excellent chemical resistance and a small surface roughness (Rms). Further, according to the present invention, it is possible to obtain a reflective mask blank and a reflective mask having a conductive film having excellent chemical resistance and a small surface roughness (Rms).
  • FIG. 1 It is a figure (diffraction X-ray spectrum) which shows the diffraction X-ray intensity (count / sec) with respect to the X-ray diffraction angle (2 ⁇ ) of Example 1.
  • FIG. It is a figure (diffraction X-ray spectrum) which shows the diffraction X-ray intensity (count / sec) with respect to the X-ray diffraction angle (2 ⁇ ) of the comparative example 1.
  • FIG. 1 shows an example of the conductive film-attached substrate 50 of the present embodiment.
  • the conductive film-attached substrate 50 of the present embodiment has a predetermined conductive film 23 on at least one main surface of the two main surfaces of the mask blank substrate 10 (sometimes simply referred to as “substrate 10”). To be equipped.
  • the main surface on which the conductive film 23 (sometimes referred to as “back surface conductive film”) is formed (sometimes simply referred to as “back surface”). Is called the "back side main surface”. Further, in the present specification, the main surface of the substrate 50 with a conductive film on which the conductive film 23 is not formed is referred to as a "front main surface”.
  • a multilayer reflective film 21 in which high refractive index layers and low refractive index layers are alternately laminated is formed on the front main surface of the mask blank substrate 10.
  • FIG. 1 illustrates a substrate with a conductive film 50 in which a predetermined conductive film 23 is arranged on one main surface (back side main surface) of the substrate 10 and a thin film is not formed on the front side main surface.
  • the conductive film-attached substrate 50 is one in which the conductive film 23 is formed on at least the back side main surface of the mask blank substrate 10, and the multilayer reflective film 21 is formed on the other main surface.
  • the substrate 50 with a conductive film also includes a substrate with a multilayer reflective film 20 and a substrate with a thin film 24 for pattern formation (reflective mask blank 30).
  • FIG. 2 shows the substrate 20 with a multilayer reflective film of the present embodiment in which the conductive film 23 is formed on the main surface on the back side.
  • the substrate 20 with a multilayer reflective film shown in FIG. 2 includes a predetermined conductive film 23 on the back side main surface thereof. Therefore, the substrate 20 with a multilayer reflective film shown in FIG. 2 is a kind of the substrate 50 with a conductive film of the present embodiment.
  • FIG. 3 is a schematic view showing an example of the reflective mask blank 30 of the present embodiment.
  • the reflective mask blank 30 of FIG. 3 has a multilayer reflective film 21, a protective film 22, and a pattern forming thin film 24 on the front main surface of the mask blank substrate 10. Further, the reflective mask blank 30 of FIG. 3 includes a predetermined conductive film 23 on the back side main surface thereof. Therefore, the reflective mask blank 30 shown in FIG. 3 is a kind of the conductive film-attached substrate 50 of the present embodiment.
  • FIG. 5 is a schematic view showing another example of the reflective mask blank 30 of the present embodiment.
  • the reflective mask blank 30 shown in FIG. 5 is the surface of the multilayer reflective film 21 and the pattern forming thin film 24, the protective film 22 formed between the multilayer reflective film 21 and the pattern forming thin film 24, and the pattern forming thin film 24. Includes an etching mask film 25 formed in.
  • the reflective mask blank 30 of the present embodiment includes a predetermined conductive film 23 on the back side main surface thereof. Therefore, the reflective mask blank 30 shown in FIG. 5 is a kind of the conductive film-attached substrate 50 of the present embodiment.
  • the etching mask film 25 may be peeled off after forming a transfer pattern on the pattern forming thin film 24 as described later. Further, in the reflective mask blank 30 that does not form the etching mask film 25, the pattern forming thin film 24 has a laminated structure of a plurality of layers, and the materials constituting the plurality of layers have different etching characteristics, and the etching mask function is provided.
  • the reflective mask blank 30 as the pattern-forming thin film 24 having the above shape may be used.
  • providing (having) a predetermined thin film (for example, conductive film 23) on the main surface of the mask blank substrate 10 means that the predetermined thin film is the main surface of the mask blank substrate 10. In addition to the case where it means that it is arranged in contact with the mask blank, it also includes the case where it means that another film is provided between the mask blank substrate 10 and a predetermined thin film. The same applies to films other than the predetermined thin film.
  • having a film B on the film A means that the film A and the film B are arranged so as to be in direct contact with each other, and another film is provided between the film A and the film B. Including the case of having.
  • the film A is arranged in contact with the surface of the film B
  • the film A and the film B are placed between the film A and the film B without interposing another film. It means that they are arranged so as to be in direct contact with each other.
  • Rms (Root means square), which is a typical index of surface roughness, is the root mean square roughness, which is the square root of the value obtained by averaging the square of the deviation from the mean line to the measurement curve. Rms is expressed by the following equation (1).
  • l is the reference length and Z is the height from the average line to the measurement curve.
  • Rms has been conventionally used for controlling the surface roughness of the mask blank substrate 10. By using Rms, the surface roughness can be grasped numerically.
  • the conductive film-attached substrate 50 of the embodiment will be specifically described.
  • the mask blank substrate 10 (sometimes simply referred to as “substrate 10”) used for the conductive film-attached substrate 50 will be described.
  • the mask blank substrate 10 has a low coefficient of thermal expansion within the range of 0 ⁇ 5 ppb / ° C. in order to prevent distortion of the transfer pattern (thin film pattern 24a of the thin film 24 for pattern formation described later) due to heat during exposure with EUV light.
  • Those having the above are preferably used.
  • As a material having a low coefficient of thermal expansion in this range for example, SiO 2- TiO 2- based glass, multi-component glass ceramics, or the like can be used.
  • the main surface on the front side on the side where the transfer pattern of the substrate 10 is formed is surface-processed so as to have high flatness from the viewpoint of obtaining at least pattern transfer accuracy and position accuracy.
  • the flatness is preferably 0.1 ⁇ m or less, more preferably 0.05 ⁇ m or less, still more preferably 0.05 ⁇ m or less in the region of 132 mm ⁇ 132 mm on the main surface on the side where the transfer pattern of the substrate 10 is formed. It is 0.03 ⁇ m or less.
  • the back side main surface opposite to the front side main surface is a surface that is electrostatically chucked when set in the exposure apparatus.
  • the flatness of the back side main surface is preferably 0.1 ⁇ m or less, more preferably 0.05 ⁇ m or less, still more preferably 0.03 ⁇ m or less in a region of 132 mm ⁇ 132 mm.
  • the flatness of the back side main surface of the reflective mask blank 30 is preferably 1 ⁇ m or less, more preferably 0.5 ⁇ m or less, still more preferably 0.3 ⁇ m or less in the region of 142 mm ⁇ 142 mm. is there.
  • the high surface smoothness of the substrate 10 is also an extremely important item.
  • the surface roughness of the front main surface on which the thin film pattern 24a of the pattern forming thin film 24 for transfer is formed is preferably 0.1 nm or less in terms of root mean square roughness (Rms).
  • the surface smoothness can be measured with an atomic force microscope.
  • the substrate 10 has high rigidity in order to prevent deformation of the film (multilayer reflective film 21 or the like) formed on the substrate 10 due to film stress.
  • the substrate 10 preferably has a high Young's modulus of 65 GPa or more.
  • a conductive film 23 for an electrostatic chuck is formed on the back side main surface of the substrate 10 (the main surface opposite to the main surface on which the multilayer reflective film 21 is formed).
  • the predetermined conductive film 23 of the conductive film-attached substrate 50 of the present embodiment contains chromium.
  • the predetermined conductive film 23 preferably contains nitrogen. Since the thin film contains chromium and nitrogen, the chemical resistance of the predetermined conductive film 23 can be further enhanced.
  • the conductive film 23 of the conductive film-attached substrate 50 of the present embodiment contains chromium.
  • the conductive film 23 can be imparted with conductivity.
  • the conductive film 23 included in the conductive film-attached substrate 50 of the present embodiment includes a lower layer 231 and an upper layer 232.
  • the conductive film 23 of the conductive film-attached substrate 50 of the present embodiment has a structure in which the lower layer 231 and the upper layer 232 are laminated in this order from the substrate side.
  • the crystalline state of the lower layer 231 of the present embodiment is preferably amorphous.
  • the fact that the lower layer 231 is amorphous means that no peak is observed in the diffracted X-ray spectrum when the lower layer 231 is measured by a predetermined X-ray diffraction method. The diffracted X-ray spectrum and peak will be described later.
  • the crystal state of the lower layer 231 can be specified from an electron diffraction image obtained by a transmission electron microscope (TEM: Transmission Electron Microscope) or the like.
  • a cross-sectional sample of the substrate 50 with a conductive film is prepared, and an electron beam is irradiated to the lower layer 231 from the cross-sectional direction to obtain an electron diffraction image. From the electron diffraction image, it is possible to specify whether the lower layer 231 is amorphous or crystalline.
  • the surface roughness of the lower layer 231 can be reduced.
  • the surface roughness of the lower layer 231 is small, the surface roughness of the upper layer 232 can be reduced when a predetermined upper layer 232 is further arranged on the surface of the lower layer 231. .. Since the conductive film-attached substrate 50 of the present embodiment has a small surface roughness (Rms) of the conductive film 23, the conductive film 23 of the reflective mask 40 obtained by the conductive film-attached substrate 50 of the present embodiment and the electrostatic chuck And, it is possible to prevent the generation of particles due to rubbing.
  • the lower layer 231 of the conductive film 23 of the conductive film-attached substrate 50 of the present embodiment is preferably made of a material containing oxygen. Since the material of the lower layer 231 contains chromium and oxygen, the crystalline state of the lower layer 231 can be easily made amorphous. In order to make it easier to make the crystalline state of the lower layer 231 amorphous, the oxygen content of the lower layer 231 is preferably 1 atomic% or more and 20 atomic% or less, and 3 atomic% or more and 15 It is more preferably atomic% or less.
  • the lower layer 231 of the conductive film 23 of the conductive film-attached substrate 50 of the present embodiment can further contain elements other than chromium and oxygen as long as the effects of the present embodiment are not impaired.
  • the lower layer 231 can further contain nitrogen.
  • examples of the element further contained in the lower layer 231 include highly conductive metals such as Ag, Au, Cu, Al, Mg, W, Ru and Co.
  • the content of components other than chromium and oxygen is preferably 30 atomic% or less, preferably 15 atomic%. The following is more preferable.
  • the upper layer 232 of the conductive film 23 of the conductive film-attached substrate 50 of the present embodiment preferably has crystallinity.
  • “the upper layer 232 has crystallinity” means that at least one peak is observed in the diffracted X-ray spectrum when the upper layer 232 is measured by a predetermined X-ray diffraction method. .. The diffracted X-ray spectrum and peak will be described later.
  • the crystal state of the upper layer 232 can be specified from an electron diffraction image obtained by a transmission electron microscope (TEM: Transmission Electron Microscope) or the like.
  • a cross-sectional sample of the substrate 50 with a conductive film is prepared, and an electron beam is irradiated to the upper layer 232 from the cross-sectional direction to obtain an electron diffraction image. From the electron diffraction image, it can be specified whether the upper layer 232 is amorphous or has crystallinity.
  • the chemical resistance of the upper layer 232 arranged on the outermost surface of the conductive film 23 can be increased. Therefore, the chemical resistance of the conductive film 23 can be increased by including the upper layer 232 having a crystalline state in the conductive film 23. Therefore, deterioration of the conductive film 23 when the reflective mask 40 manufactured by using the conductive film-attached substrate 50 of the present embodiment is repeatedly washed with a chemical such as a chemical solution can be suppressed.
  • the upper layer 232 of the conductive film-attached substrate 50 of the present embodiment is preferably made of a nitrogen-containing material. Since the material of the upper layer 232 contains chromium and nitrogen, the mechanical strength of the upper layer 232 can be increased as compared with the case where the upper layer 232 is formed only by chromium. Generally, the chromium nitride-based film becomes an amorphous film when the nitrogen content is within a predetermined range. A chromium nitride-based film having a nitrogen content below a predetermined range becomes a metallic film having crystallinity, and a chromium nitride-based film having a nitrogen content exceeding a predetermined range becomes a highly crystalline film having crystallinity.
  • the nitrogen content of the upper layer 232 is preferably 1 atomic% or more and 15 atomic% or less, and is preferably 2 atomic%. More preferably, it is 10 atomic% or less.
  • the upper layer 232 of the predetermined conductive film 23 of the conductive film-attached substrate 50 of the present embodiment is made of chromium except for impurities inevitably mixed. And preferably composed only of nitrogen. It should be noted that even when it is simply stated in the present specification that "the thin film is composed only of chromium and nitrogen", it means that the thin film can contain impurities inevitably mixed in addition to chromium and nitrogen. ..
  • the upper layer 232 of the conductive film 23 of the conductive film-attached substrate 50 of the present embodiment can further contain elements other than chromium and nitrogen as long as the effects of the present embodiment are not impaired.
  • examples of the element further contained in the upper layer 232 include highly conductive metals Ag, Au, Cu, Al, Mg, W, Ru and Co.
  • the content of components other than chromium and nitrogen is preferably 30 atomic% or less, and is 15 atomic% or less. However, it is more preferable.
  • the chromium content of the upper layer 232 of the conductive film-coated substrate 50 of the present embodiment is higher than the chromium content of the lower layer 231.
  • the upper layer 232 of the predetermined conductive film 23 of the conductive film-attached substrate 50 of the present embodiment has a predetermined crystallinity.
  • a diffracted X-ray spectrum (hereinafter, such diffraction X) such that a peak is detected at a predetermined diffraction angle 2 ⁇ when the upper layer 232 is measured by an X-ray diffraction method.
  • the line spectrum may be referred to as a "predetermined diffracted X-ray spectrum").
  • the fact that a peak is detected in the diffracted X-ray spectrum means that the upper layer 232 to be measured has crystallinity.
  • FIG. 7 shows a diffracted X-ray spectrum (diffraction X-ray intensity with respect to a diffraction angle 2 ⁇ ) obtained by measuring the diffracted X-ray intensity with respect to the upper layer 232 of the predetermined conductive film 23 of the present embodiment. As shown in FIG.
  • a peak is detected in the range where the diffraction angle 2 ⁇ is 41 degrees or more and 47 degrees or less. Note that this peak is is assumed that corresponding to the peak of the (200) plane of the (111) plane or CrN of Cr 2 N, the present invention is not intended to be bound by this speculation.
  • the peak is detected in the range where the diffraction angle 2 ⁇ is 41 degrees or more and 47 degrees or less, it means that the upper layer 232 to be measured has crystallinity.
  • the peak detected by the X-ray diffraction method is a peak when the measurement data of the diffraction X-ray intensity with respect to the diffraction angle 2 ⁇ using CuK ⁇ -ray is shown, and the measurement data (diffraction X-ray). It can be assumed that the height of the peak when the background is subtracted from the spectrum) is twice or more the magnitude of the background noise (noise width) in the vicinity of the peak.
  • the diffraction angle 2 ⁇ of the peak can be a diffraction angle 2 ⁇ indicating the maximum value of the peak when the background is subtracted from the measurement data.
  • the diffraction X-ray intensity with respect to the diffraction angle 2 ⁇ was measured for the upper layer 232 by the X-ray diffraction method using CuK ⁇ rays. At that time, it is preferable that the peak is detected in the range where the diffraction angle 2 ⁇ is 56 degrees or more and 60 degrees or less. As shown in FIG. 7, in the diffraction X-ray spectrum of the upper layer 232 of Example 1 having excellent chemical resistance, a peak is detected in a diffraction angle 2 ⁇ of 56 degrees or more and 60 degrees or less. Note that this peak is is assumed that corresponding to the peak of the (112) plane of Cr 2 N, the present invention is not intended to be bound by this speculation.
  • the present inventors have found that a thin film having a crystal structure in which a peak is detected in the upper layer 232 of the conductive film 23 in a diffraction angle 2 ⁇ of 56 degrees or more and 60 degrees or less is excellent in chemical resistance. Obtained. Therefore, when the reflective mask 40 is manufactured using the conductive film-attached substrate 50 including the conductive film 23 having the upper layer 232, the reflective mask 40 is repeatedly washed with a chemical such as a chemical solution. However, deterioration of the thin film of the reflective mask 40 can be suppressed.
  • the diffraction X-ray intensity with respect to the diffraction angle 2 ⁇ was measured for the upper layer 232 by the X-ray diffraction method using CuK ⁇ rays. At that time, it is preferable that no peak is detected in the range where the diffraction angle 2 ⁇ is 35 degrees or more and 38 degrees or less. As shown in FIG. 7, in the diffraction X-ray spectrum of Example 1, no peak is detected in the range where the diffraction angle 2 ⁇ is 35 degrees or more and 38 degrees or less. It is presumed that the peak in this diffraction angle range corresponds to the peak of the (111) plane of CrN, but the present invention is not bound by this presumption.
  • the upper layer 232 of the predetermined conductive film 23 of the conductive film-attached substrate 50 of the present embodiment contains chromium and nitrogen.
  • the crystal structure of the predetermined thin film changes depending on the nitrogen content of the predetermined thin film (upper layer 232 of the conductive film 23) containing chromium and nitrogen.
  • the conductive film including the predetermined upper layer 232 and the predetermined lower layer 231 by using the conductive film 23 including the predetermined upper layer 232 and the predetermined lower layer 231, the conductive film including the conductive film 23 having excellent chemical resistance and low surface roughness (Rms).
  • the film-attached substrate 50 can be obtained. Therefore, when the reflective mask 40 manufactured by using the conductive film-attached substrate 50 of the present embodiment is repeatedly washed with a chemical such as a chemical solution, deterioration of the conductive film 23 can be suppressed. Further, since the surface roughness (Rms) of the conductive film 23 is small, it is possible to prevent the generation of particles due to rubbing between the conductive film 23 of the reflective mask 40 and the electrostatic chuck. Therefore, the conductive film-attached substrate 50 of the present embodiment can be preferably used as the conductive film-attached substrate 50 for manufacturing the reflective mask 40.
  • the method for forming the predetermined conductive film 23 (upper layer 232 and lower layer 231) of the present embodiment, any known method can be used as long as necessary characteristics can be obtained.
  • a sputtering method such as a DC magnetron sputtering method, an RF sputtering method, and an ion beam sputtering method is generally used. Reactive sputtering methods can be used to more reliably obtain the required properties.
  • the predetermined conductive film 23 (upper layer 232 or lower layer 231) contains chromium and nitrogen
  • chromium and nitrogen are formed by introducing nitrogen gas and forming a film by sputtering in a nitrogen atmosphere using a chromium target.
  • a predetermined conductive film 23 (upper layer 232 or lower layer 231) containing the above can be formed.
  • the predetermined conductive film 23 (upper layer 232 or lower layer 231) contains chromium and oxygen
  • chromium and oxygen are formed by introducing oxygen gas and sputtering in a nitrogen atmosphere using a chromium target.
  • a predetermined conductive film 23 (upper layer 232 or lower layer 231) containing the above can be formed. Further, by introducing both nitrogen gas and oxygen gas and forming a film by sputtering, a predetermined conductive film 23 (upper layer 232 or lower layer 231) containing chromium, nitrogen and oxygen can be formed.
  • an inert gas such as argon gas can be used in combination.
  • the method for forming the predetermined conductive film 23 is specifically that the substrate 10 is placed on a horizontal plane with the film-forming surface of the substrate 10 for forming the predetermined conductive film 23 facing upward. It is preferable to form a film while rotating with. At this time, it is preferable to form a film at a position where the central axis of the substrate 10 and the straight line passing through the center of the sputtering target and parallel to the central axis of the substrate 10 deviate from each other. That is, it is preferable to incline the sputtering target with respect to the surface to be filmed so as to have a predetermined angle to form a predetermined conductive film 23.
  • a predetermined conductive film 23 can be formed by arranging the sputtering target and the substrate 10 in such an arrangement and sputtering the opposing sputtering targets.
  • the predetermined angle is preferably an angle at which the inclination angle of the sputtering target is 5 degrees or more and 30 degrees or less.
  • the gas pressure during the sputtering film formation is preferably 0.03 Pa or more and 0.1 Pa or less.
  • Each of the upper layer 232 and the lower layer 231 of the conductive film 23 can be a uniform film having a uniform concentration of elements (for example, chromium element and nitrogen element) contained in the thin film, except for the surface layer affected by surface oxidation. .. Further, the composition gradient film may be formed so that the concentration of the element contained in the upper layer 232 or the lower layer 231 changes along the thickness direction of the upper layer 232 or the lower layer 231. Further, the upper layer 232 or the lower layer 231 can be a laminated film composed of a plurality of layers having a plurality of different compositions as long as the effects of the present embodiment are not impaired.
  • elements for example, chromium element and nitrogen element
  • the substrate 50 with a conductive film of the present embodiment includes, for example, a hydrogen intrusion suppression film that suppresses hydrogen from entering the conductive film 23 from the substrate 10 (glass substrate) between the substrate 10 and the conductive film 23. be able to. Due to the presence of the hydrogen intrusion suppression film, it is possible to suppress the uptake of hydrogen into the conductive film 23 and suppress the increase in the compressive stress of the conductive film 23.
  • the material of the hydrogen intrusion suppression film may be any kind as long as it is difficult for hydrogen to permeate and can suppress the invasion of hydrogen from the substrate 10 (glass substrate) to the conductive film 23.
  • Specific examples of the material for the hydrogen intrusion suppression membrane include Si, SiO 2 , SiON, SiCO, SiCON, SiBO, SiBON, Cr, CrN, CrO, CrON, CrC, CrCN, CrCO, CrCON, Mo, MoSi. , MoSiN, MoSiO, MoSiCO, MoSiON, MoSiCON, TaO, TaON and the like.
  • the hydrogen intrusion suppression film can be a single layer of these materials, or may be a plurality of layers and a composition gradient film. CrO can be used as the material of the hydrogen intrusion suppression membrane.
  • the electrical characteristics required for the conductive film 23 having conductivity for an electrostatic chuck are usually 150 ⁇ / ⁇ ( ⁇ / square) or less, preferably 100 ⁇ / ⁇ or less.
  • the thickness of the conductive film 23 is not particularly limited as long as it satisfies the function for the electrostatic chuck.
  • the thickness of the conductive film 23 is usually 20 nm to 250 nm.
  • the thickness of the lower layer 231 is preferably 5 to 50 nm, and the thickness of the upper layer 232 is preferably 15 to 200 nm.
  • the conductive film 23 also has stress adjustment on the back side main surface side of the reflective mask blank 30. The conductive film 23 is adjusted so as to obtain a flat reflective mask blank 30 by balancing with stresses from various films formed on the front main surface.
  • the conductive film 23 preferably has a film thinning amount of 1 nm or less when SPM cleaning is performed once. As a result, even when wet cleaning using an acidic aqueous solution (chemical solution) such as SPM cleaning is performed in the manufacturing process of the reflective mask blank 30, the reflective mask 40 and / or the semiconductor device, the conductive film 23 is formed. It does not impair the required sheet resistance, mechanical strength and / or transmittance.
  • the SPM cleaning is a cleaning method using H 2 SO 4 and H 2 O 2 , and a cleaning liquid having a ratio of H 2 SO 4 : H 2 O 2 of 1: 1 to 5: 1 is used.
  • a cleaning liquid having a ratio of H 2 SO 4 : H 2 O 2 of 1: 1 to 5: 1 is used.
  • it refers to cleaning performed at a temperature of 80 to 150 ° C. and a treatment time of about 10 minutes.
  • the cleaning conditions of SPM which is a criterion for determining the cleaning resistance in the present embodiment, are as follows.
  • Cleaning liquid H 2 SO 4 : H 2 O 2 2: 1 (weight ratio)
  • Cleaning temperature 120 ° C Cleaning time 10 minutes
  • the pattern transfer device for manufacturing a semiconductor device usually includes an electrostatic chuck for fixing the reflective mask 40 mounted on the stage.
  • the conductive film 23 formed on the back side main surface of the reflective mask 40 is fixed to the stage of the pattern transfer device by an electrostatic chuck.
  • the surface roughness of the conductive film 23 is such that the root mean square roughness (Rms) obtained by measuring a region of 1 ⁇ m ⁇ 1 ⁇ m with an atomic force microscope is preferably 0.5 nm or less, and preferably 0.4 nm or less. More preferred. Since the surface of the conductive film 23 has a predetermined root mean square roughness (Rms), it is possible to prevent the generation of particles due to rubbing between the electrostatic chuck and the conductive film 23.
  • the conductive film 23 is further loaded. Therefore, the conductive film 23 is desired to have higher mechanical strength.
  • the mechanical strength of the conductive film 23 can be evaluated by measuring the crack generation load of the conductive film-attached substrate 50.
  • the mechanical strength needs to be 300 mN or more in terms of the crack generation load.
  • the mechanical strength is the value of the crack generation load, preferably 600 mN or more, and more preferably more than 1000 mN.
  • the conductive film 23 has the mechanical strength required as the conductive film 23 for an electrostatic chuck.
  • Japanese Patent No. 583249 describes a method of correcting an error of a mask for photolithography by using a laser beam.
  • Japanese Patent No. 583249 describes a method of correcting an error of a mask for photolithography by using a laser beam.
  • the conductive film 23 is arranged on the back side main surface of the substrate 10 of the reflective mask 40, there arises a problem that it is difficult for the laser beam to pass through.
  • chromium is used as a thin film material, the visible light transmittance of the thin film at a predetermined wavelength is relatively high.
  • the film thickness of the conductive film 23 can be selected from an appropriate film thickness in relation to the transmittance and electrical conductivity of light having a wavelength of 532 nm. For example, if the electrical conductivity of the material is high, the film thickness can be made thin and the transmittance can be increased.
  • the film thickness of the conductive film 23 of the conductive film-attached substrate 50 of the present embodiment using chromium as a thin film material is preferably 20 nm or more and 50 nm or less. When the conductive film 23 has a predetermined film thickness, a conductive film 23 having more appropriate transmittance and conductivity can be obtained.
  • the transmittance of the conductive film 23 at a wavelength of 532 nm is preferably 10% or more, more preferably 20% or more, and further preferably 25% or more.
  • the transmittance at a wavelength of 632 nm is preferably 25% or more. Since the light transmittance of the conductive film 23 of the conductive film-attached substrate 50 at a predetermined wavelength is within a predetermined range, the positional deviation of the reflective mask 40 can be corrected from the back side main surface side by a laser beam or the like. A reflective mask 40 can be obtained.
  • the transmittance of the present embodiment is such that the conductive substrate 50 provided with the conductive film 23 is irradiated with light having a wavelength of 532 nm from the conductive film 23 side, and the transmitted light transmitted through the conductive film 23 and the substrate 10. It was obtained by measuring.
  • the substrate 20 with a multilayer reflective film of the present embodiment has a main surface (front side main surface) opposite to the main surface (back side main surface) on which the above-mentioned conductive film 23 is formed.
  • a multilayer reflective film 21 in which high refractive index layers and low refractive index layers are alternately laminated is formed on the top.
  • the substrate 20 with a multilayer reflective film of the present embodiment has a predetermined conductive film 23 on the back side main surface. Therefore, the substrate 20 with a multilayer reflective film of this embodiment is a kind of the substrate 50 with a conductive film.
  • the substrate 20 with a multilayer reflective film of the present embodiment can reflect EUV light having a predetermined wavelength by having a predetermined multilayer reflective film 21.
  • the multilayer reflective film 21 can be formed before the conductive film 23 is formed. Further, the conductive film 23 may be formed as shown in FIG. 1, and then the multilayer reflective film 21 may be formed as shown in FIG.
  • the multilayer reflective film 21 imparts a function of reflecting EUV light in the reflective mask 40.
  • the multilayer reflective film 21 has a configuration of a multilayer film in which each layer containing elements having different refractive indexes as main components is periodically laminated.
  • the multilayer reflective film 21 includes a thin film (high refractive index layer) of a light element or a compound thereof which is a high refractive index material and a thin film (low refractive index layer) of a heavy element or a compound thereof which is a low refractive index material.
  • a multilayer film in which and are alternately laminated for about 40 to 60 cycles is used.
  • the multilayer film may be laminated for a plurality of cycles with the laminated structure of the high refractive index layer / low refractive index layer in which the high refractive index layer and the low refractive index layer are laminated in this order from the substrate 10 side as one cycle.
  • a laminated structure of a low refractive index layer / a high refractive index layer in which a low refractive index layer and a high refractive index layer are laminated in this order may be laminated for a plurality of cycles.
  • the outermost layer of the multilayer reflective film 21 (that is, the surface layer of the multilayer reflective film 21 on the opposite side of the substrate 10) is preferably a high refractive index layer.
  • the uppermost layer is It becomes a low refractive index layer. Since the low refractive index layer on the outermost surface of the multilayer reflective film 21 is easily oxidized, the reflectance of the multilayer reflective film 21 is reduced. In order to avoid a decrease in the reflectance, it is preferable to further form a high refractive index layer on the uppermost low refractive index layer to form the multilayer reflective film 21.
  • the above-mentioned multilayer film when a laminated structure (low refractive index layer / high refractive index layer) in which a low refractive index layer and a high refractive index layer are laminated in this order on the substrate 10 is set as one cycle, and a plurality of cycles are laminated.
  • the uppermost layer is a high refractive index layer. In this case, it is not necessary to further form the high refractive index layer.
  • a layer containing silicon (Si) is adopted as the high refractive index layer.
  • Si silicon
  • a Si compound containing boron (B), carbon (C), nitrogen (N), and / or oxygen (O) can be used.
  • B boron
  • C carbon
  • N nitrogen
  • O oxygen
  • a layer containing Si as a high refractive index layer
  • a reflective mask 40 for EUV lithography having excellent reflectance of EUV light can be obtained.
  • a glass substrate is preferably used as the substrate 10. Si is also excellent in adhesion to a glass substrate.
  • the low refractive index layer a simple substance of a metal selected from molybdenum (Mo), ruthenium (Ru), rhodium (Rh), and platinum (Pt), or an alloy thereof is used.
  • Mo molybdenum
  • Ru ruthenium
  • Rh rhodium
  • Pt platinum
  • the multilayer reflective film 21 for EUV light having a wavelength of 13 nm to 14 nm a Mo / Si periodic laminated film in which Mo film and Si film are alternately laminated for about 40 to 60 cycles is preferably used.
  • the high-refractive index layer which is the uppermost layer of the multilayer reflective film 21, is formed of silicon (Si), and a silicon oxide containing silicon and oxygen is formed between the uppermost layer (Si) and the Ru-based protective film 22. Layers can be formed. By forming the silicon oxide layer, the cleaning resistance of the reflective mask 40 can be improved.
  • the reflectance of the above-mentioned multilayer reflective film 21 alone is usually 65% or more, and the upper limit is usually 73%.
  • the thickness and period of each constituent layer of the multilayer reflective film 21 can be appropriately selected depending on the exposure wavelength, and can be selected so as to satisfy, for example, Bragg's reflection law.
  • a plurality of high refractive index layers and a plurality of low refractive index layers are present.
  • the thicknesses of the plurality of high refractive index layers do not have to be the same, and the thicknesses of the plurality of low refractive index layers do not have to be the same.
  • the film thickness of the Si layer on the outermost surface of the multilayer reflective film 21 can be adjusted within a range that does not reduce the reflectance.
  • the film thickness of Si (high refractive index layer) on the outermost surface can be 3 nm to 10 nm.
  • the method for forming the multilayer reflective film 21 is known. For example, it can be formed by forming each layer of the multilayer reflective film 21 by an ion beam sputtering method.
  • a Si film having a thickness of about 4 nm is first formed on the substrate 10 using a Si target, and then a thickness of 3 nm is formed using the Mo target.
  • a degree of Mo film is formed.
  • the Si film / Mo film is laminated for 40 to 60 cycles with one cycle as one cycle to form the multilayer reflective film 21 (the outermost layer is a Si layer).
  • Kr krypton
  • the substrate 20 with a multilayer reflective film (subject 50 with a conductive film) of the present embodiment further includes a protective film 22 arranged in contact with the surface of the multilayer reflective film 21 opposite to the mask blank substrate 10. It is preferable to include it.
  • the protective film 22 is formed on the multilayer reflective film 21 in order to protect the multilayer reflective film 21 from dry etching and cleaning in the manufacturing process of the reflective mask 40 described later. Further, when the black defect of the transfer pattern (thin film pattern 24a described later) is corrected using an electron beam (EB), the protective film 22 can protect the multilayer reflective film 21.
  • the protective film 22 can have a laminated structure of three or more layers.
  • the bottom layer and the top layer of the protective film 22 are made of the above-mentioned Ru-containing substance, and a metal other than Ru or an alloy of a metal other than Ru is interposed between the bottom layer and the top layer. It can be a structure.
  • the material of the protective film 22 is composed of, for example, a material containing ruthenium as a main component.
  • a material containing ruthenium as a main component Ru metal alone or Ru in titanium (Ti), niobium (Nb), molybdenum (Mo), zirconium (Zr), yttrium (Y), boron (B), lantern (La) ), Cobalt (Co), and / or Ruthenium containing metals such as ruthenium (Re) can be used.
  • the material of these protective films 22 can further contain nitrogen.
  • the protective film 22 is effective when the pattern-forming thin film 24 is patterned by dry etching of Cl-based gas.
  • the Ru content ratio of the Ru alloy is 50 atomic% or more and less than 100 atomic%, preferably 80 atomic% or more and less than 100 atomic%, and more preferably 95 atomic% or more and less than 100 atomic%. Is.
  • the Ru content ratio of the Ru alloy is 95 atomic% or more and less than 100 atomic%, the reflectance of EUV light is increased while suppressing the diffusion of the element (silicon) constituting the multilayer reflective film 21 on the protective film 22. It can be secured sufficiently.
  • the protective film 22 can have a mask cleaning resistance, an etching stopper function when the pattern forming thin film 24 is etched, and a protective function for preventing the multilayer reflective film 21 from changing with time.
  • EUV lithography since there are few substances that are transparent to the exposure light, EUV pellicle that prevents foreign matter from adhering to the mask pattern surface is not technically easy. For this reason, pellicle-less operation that does not use pellicle has become the mainstream. Further, in the case of EUV lithography, exposure contamination occurs such that a carbon film is deposited on the mask and an oxide film is grown due to EUV exposure. Therefore, when the EUV reflective mask 40 is used in the manufacture of a semiconductor device, it is necessary to frequently perform cleaning to remove foreign substances and contamination on the mask. For this reason, the EUV reflective mask 40 is required to have mask cleaning resistance that is orders of magnitude higher than that of the transmissive mask for optical lithography.
  • the Ru-based protective film 22 containing Ti When the Ru-based protective film 22 containing Ti is used, cleaning against a cleaning solution such as sulfuric acid, sulfuric acid hydrogen peroxide (SPM), ammonia, ammonia hydrogen peroxide (APM), OH radical cleaning water, and ozone water having a concentration of 10 ppm or less.
  • a cleaning solution such as sulfuric acid, sulfuric acid hydrogen peroxide (SPM), ammonia, ammonia hydrogen peroxide (APM), OH radical cleaning water, and ozone water having a concentration of 10 ppm or less.
  • SPM sulfuric acid hydrogen peroxide
  • APM ammonia
  • APM ammonia hydrogen peroxide
  • OH radical cleaning water OH radical cleaning water
  • ozone water having a concentration of 10 ppm or less.
  • the thickness of the protective film 22 is not particularly limited as long as it can function as the protective film 22. From the viewpoint of the reflectance of EUV light, the thickness of the protective film 22 is preferably 1.0 nm to 8.0 nm, more preferably 1.5 nm to 6.0 nm.
  • the same method as a known film forming method can be adopted without particular limitation.
  • Specific examples of the method for forming the protective film 22 include a sputtering method and an ion beam sputtering method.
  • the substrate 20 with a multilayer reflective film of the present embodiment can have a base film in contact with the main surface of the substrate 10.
  • the base film is a thin film formed between the substrate 10 and the multilayer reflective film 21.
  • a material containing ruthenium or tantalum as a main component is preferably used.
  • the material of the base film for example, Ru metal alone, Ta metal alone, Ru alloy or Ta alloy can be used.
  • Ru alloys and Ta alloys Ru and / or Ta, titanium (Ti), niobium (Nb), molybdenum (Mo), zirconium (Zr), yttrium (Y), boron (B), lantern (La), cobalt Those containing a metal such as (Co) and / or renium (Re) can be used.
  • the film thickness of the base film can be, for example, in the range of 1 nm to 10 nm.
  • FIG. 3 is a schematic view showing an example of the reflective mask blank 30 of the present embodiment.
  • the reflective mask blank 30 of the present embodiment includes a pattern forming thin film 24 on the multilayer reflective film 21 of the above-mentioned substrate 20 with a multilayer reflective film (substrate 50) or on the protective film 22. That is, the reflective mask blank 30 of the present embodiment has a structure in which the multilayer reflective film 21 and the pattern forming thin film 24 are laminated in this order on one main surface (front side main surface) of the substrate 10.
  • the above-mentioned predetermined conductive film 23 is provided on the other main surface (back side main surface) of 10.
  • the reflective mask blank 30 may further have an etching mask film 25 and / or a resist film 32 on the pattern forming thin film 24 (see FIGS. 5 and 6A).
  • the reflective mask blank 30 has a pattern-forming thin film 24 on the above-mentioned substrate 20 with a multilayer reflective film. That is, the pattern forming thin film 24 is formed on the multilayer reflective film 21 (when the protective film 22 is formed, on the protective film 22).
  • the basic function of the pattern forming thin film 24 is to absorb EUV light.
  • the pattern forming thin film 24 may be a pattern forming thin film 24 for the purpose of absorbing EUV light, or may be a pattern forming thin film 24 having a phase shift function in consideration of the phase difference of EUV light. ..
  • the pattern-forming thin film 24 having a phase shift function absorbs EUV light and reflects a part of the EUV light to shift the phase.
  • the portion where the pattern-forming thin film 24 is formed absorbs EUV light and dims, and adversely affects pattern transfer. Reflects some light at no level. Further, in the region (field portion) where the pattern forming thin film 24 is not formed, EUV light is reflected from the multilayer reflective film 21 via the protective film 22. Therefore, a desired phase difference is obtained between the reflected light from the pattern forming thin film 24 having the phase shift function and the reflected light from the field portion.
  • the pattern-forming thin film 24 having a phase shift function is formed so that the phase difference between the reflected light from the pattern-forming thin film 24 and the reflected light from the multilayer reflective film 21 is 170 degrees to 190 degrees.
  • the image contrast of the projected optical image is improved by the light having the inverted phase difference in the vicinity of 180 degrees interfering with each other at the pattern edge portion. As the image contrast is improved, the resolution is increased, and various exposure-related margins such as exposure amount margin and focal margin can be increased.
  • the pattern forming thin film 24 may be a single-layer film, or may be a multilayer film composed of a plurality of films (for example, a lower layer pattern forming thin film and an upper layer pattern forming thin film).
  • a single-layer film the number of steps in manufacturing the reflective mask blank 30 can be reduced, and the production efficiency is improved.
  • its optical constant and film thickness can be appropriately set so that the upper layer pattern forming thin film becomes an antireflection film at the time of mask pattern defect inspection using light. As a result, the inspection sensitivity at the time of mask pattern defect inspection using light is improved.
  • the stability over time is improved.
  • the pattern forming thin film 24 is a pattern-forming thin film 24 having a phase shift function, the range of adjustment on the optical surface can be increased by forming a multilayer film, so that a desired reflectance can be obtained. It will be easier.
  • the material of the pattern forming thin film 24 has a function of absorbing EUV light and can be processed by etching or the like (preferably, it can be etched by dry etching of chlorine (Cl) and / or fluorine (F) -based gas). As long as it is, there is no particular limitation. As a material having such a function, tantalum (Ta) alone or a material containing Ta can be preferably used.
  • the material containing Ta examples include a material containing Ta and B, a material containing Ta and N, a material containing Ta and B and at least one of O and N, a material containing Ta and Si, and a material containing Ta and Si.
  • examples thereof include a material containing Ta and N, a material containing Ta and Ge, a material containing Ta, Ge and N, a material containing Ta and Pd, a material containing Ta and Ru, and a material containing Ta and Ti.
  • the pattern forming thin film 24 contains, for example, Ni alone, a Ni-containing material, Cr alone, a Cr-containing material, Ru alone, a Ru-containing material, Pd-only material, a Pd-containing material, Mo-only material, and Mo. It can be formed of a material containing at least one selected from the group consisting of materials.
  • the pattern-forming thin film 24 can be a thin film similar to the upper layer 232 of the predetermined conductive film 23 described above. That is, the pattern-forming thin film 24 of the present embodiment can be a thin film (predetermined thin film) containing chromium (Cr) and having crystallinity. In addition, the predetermined thin film can further contain nitrogen. When the diffraction X-ray intensity with respect to the diffraction angle 2 ⁇ is measured by the X-ray diffraction method using CuK ⁇ rays on a predetermined thin film, it can have a predetermined diffraction X-ray spectrum.
  • the pattern-forming thin film 24 contains chromium (Cr) and nitrogen (N) having a predetermined crystal structure having a predetermined diffracted X-ray spectrum, the chemical resistance of the pattern-forming thin film 24, particularly resistance to SPM cleaning, is improved. Can be enhanced.
  • the thickness of the pattern forming thin film 24 is preferably 30 nm to 100 nm in order to properly absorb EUV light.
  • the pattern forming thin film 24 can be formed by a known method, for example, a magnetron sputtering method, an ion beam sputtering method, or the like.
  • etching mask film 25 may be formed on the pattern forming thin film 24.
  • a material having a high etching selectivity of the pattern forming thin film 24 with respect to the etching mask film 25 is used.
  • high selection ratio means that the value of the selection ratio defined above is large with respect to the comparison target.
  • the etching selectivity of the pattern forming thin film 24 with respect to the etching mask film 25 is preferably 1.5 or more, and more preferably 3 or more.
  • Examples of the material having a high etching selectivity of the pattern forming thin film 24 with respect to the etching mask film 25 include a material of chromium and a chromium compound. Therefore, when the pattern-forming thin film 24 is etched with a fluorine-based gas, a material of chromium or a chromium compound can be used. Examples of the chromium compound include a material containing Cr and at least one element selected from N, O, C and H. Further, when the pattern forming thin film 24 is etched with a chlorine-based gas that does not substantially contain oxygen, a material of silicon or a silicon compound can be used.
  • Examples of the silicon compound include a material containing Si and at least one element selected from N, O, C and H, metallic silicon (metal silicide) containing a metal in silicon and the silicon compound, and metallic silicon compound (metal silicide). Materials such as compound) can be mentioned.
  • Examples of the metal silicon compound include a material containing a metal, Si, and at least one element selected from N, O, C, and H.
  • the film thickness of the etching mask film 25 is preferably 3 nm or more from the viewpoint of obtaining a function as an etching mask for accurately forming a transfer pattern on the pattern forming thin film 24.
  • the film thickness of the etching mask film 25 is preferably 15 nm or less from the viewpoint of reducing the film thickness of the resist film 32.
  • the etching mask film 25 can be a thin film similar to the upper layer 232 of the predetermined conductive film 23 described above. That is, the etching mask film 25 of the present embodiment can be a thin film (predetermined thin film) containing chromium (Cr) and having crystallinity. In addition, the predetermined thin film can further contain nitrogen. When the diffraction X-ray intensity with respect to the diffraction angle 2 ⁇ is measured by the X-ray diffraction method using CuK ⁇ rays on a predetermined thin film, it can have a predetermined diffraction X-ray spectrum.
  • the etching mask film 25 contains chromium (Cr) and nitrogen (N) having a predetermined crystal structure having a predetermined diffracted X-ray spectrum, thereby further enhancing the chemical resistance of the etching mask film 25, particularly the resistance to SPM cleaning. be able to.
  • FIG. 4 is a schematic view showing the reflective mask 40 of the present embodiment.
  • a transfer pattern is provided on the pattern forming thin film 24 of the reflective mask blank 30.
  • the pattern-forming thin film 24 in the reflective mask blank 30 is patterned, and the thin film pattern of the pattern-forming thin film 24 is placed on the multilayer reflective film 21 or on the protective film 22. It is a structure in which 24a is formed.
  • the reflective mask 40 of the present embodiment is exposed with exposure light such as EUV light, the exposure light is absorbed in a part of the pattern forming thin film 24 on the surface of the reflective mask 40, and the other pattern forming thin film 24 is absorbed.
  • the exposed protective film 22 and the multilayer reflective film 21 reflect the exposure light in the portion where the above is removed, so that the exposure light can be used as a reflective mask 40 for EUV lithography.
  • the reflective mask 40 of the present embodiment by having the thin film pattern 24a on the multilayer reflective film 21 (or on the protective film 22), a predetermined pattern is transferred to the transfer target using EUV light. be able to.
  • the reflective mask 40 of the present embodiment has a conductive film 23 having excellent chemical resistance. Therefore, even if the reflective mask 40 of the present embodiment is repeatedly washed with a chemical such as a chemical solution, deterioration of the reflective mask 40 can be suppressed. Therefore, it can be said that the reflective mask 40 of the present invention can have a highly accurate transfer pattern.
  • the method for manufacturing a semiconductor device of the present embodiment includes a step of exposing and transferring a transfer pattern to a resist film on a semiconductor substrate using the reflective mask 40 of the present embodiment. That is, a circuit pattern based on the thin film pattern 24a of the reflective mask 40 is formed on a resist film formed on a transfer target such as a semiconductor substrate by the reflective mask 40 described above and a lithography process using an exposure apparatus. By transferring the transfer pattern and undergoing various other steps, it is possible to manufacture a semiconductor device in which various transfer patterns and the like are formed on a transfer object such as a semiconductor substrate.
  • the reflective mask 40 having the conductive film 23 and / or the thin film pattern 24a having excellent chemical resistance can be used for manufacturing the semiconductor device. Even if the reflective mask 40 is repeatedly washed with a chemical such as a chemical solution (for example, sulfuric acid superwater in the case of SPM cleaning), deterioration of the conductive film 23 and / or the thin film pattern 24a of the reflective mask 40 is suppressed. Therefore, even when the reflective mask 40 is repeatedly used, it is possible to manufacture a semiconductor device having a fine and highly accurate transfer pattern.
  • a chemical such as a chemical solution (for example, sulfuric acid superwater in the case of SPM cleaning)
  • Example 1 First, the conductive film-attached substrate 50 of Example 1 will be described.
  • the substrate 10 for manufacturing the conductive film-attached substrate 50 of Example 1 was prepared as follows. That is, a SiO 2- TiO 2 glass substrate, which is a 6025 size (about 152 mm ⁇ about 152 mm ⁇ 6.35 mm) low thermal expansion glass substrate in which both the front side main surface and the back side main surface are polished, is prepared and the substrate 10 And said. Polishing was carried out by a rough polishing step, a precision polishing step, a local processing step, and a touch polishing step so as to obtain a flat and smooth main surface.
  • a lower layer 231 made of a CrON film is formed on the back main surface of the SiO 2- TiO 2 system glass substrate (mask blank substrate 10) of Example 1, and an upper layer 232 made of a CrN film is formed on the lower layer 231. , The conductive film 23.
  • the CrON film (lower layer 231) was formed with a film thickness of 15 nm by a reactive sputtering method (DC magnetron sputtering method) in a mixed gas atmosphere of Ar gas, N 2 gas and O 2 gas using a Cr target. ..
  • a reactive sputtering method DC magnetron sputtering method
  • the composition (atomic%) of the CrON film was measured by X-ray photoelectron spectroscopy (XPS method)
  • the atomic ratios were 88 atomic% for chromium (Cr), 6 atomic% for oxygen (O), and nitrogen (N).
  • XPS method X-ray photoelectron spectroscopy
  • an upper layer 232 made of a CrN film was formed on the lower layer 231.
  • the CrN film (upper layer 232) was formed with a film thickness of 180 nm by a reactive sputtering method (DC magnetron sputtering method) in a mixed gas atmosphere of Ar gas and N 2 gas using a Cr target.
  • a reactive sputtering method DC magnetron sputtering method
  • the composition (atomic%) of the CrN film was measured by X-ray photoelectron spectroscopy (XPS method)
  • the atomic ratio was 91 atomic% for chromium (Cr) and 9 atomic% for nitrogen (N).
  • the diffraction X-ray intensity with respect to the diffraction angle 2 ⁇ was measured by the X-ray diffraction method using CuK ⁇ rays.
  • the X-ray diffractometer a Smart Lab manufactured by Rigaku Co., Ltd. was used.
  • the diffraction X-ray spectrum is measured using a Cu—K ⁇ radiation source under the conditions that the diffraction angle 2 ⁇ is in the range of 30 ° to 70 °, the sampling width is 0.01 °, and the scan speed is 2 ° / min. went.
  • the conductive film 23 was irradiated with X-rays generated using a Cu—K ⁇ radiation source, and the diffracted X-ray intensity at a diffraction angle of 2 ⁇ was measured to obtain a diffracted X-ray spectrum. From the obtained diffraction X-ray spectrum, it was determined whether or not there was a peak in the diffraction angle 2 ⁇ in the range of 56 degrees or more and 60 degrees or less, 41 degrees or more and 47 degrees or less, and 35 degrees or more and 38 degrees or less. To judge the presence or absence of a peak, the height of the peak when the background is subtracted from the measured diffracted X-ray spectrum is twice as large as the noise magnitude (noise width) of the background near the peak.
  • the diffracted X-ray spectrum obtained by the measurement is the diffracted X-ray spectrum of the CrN film (upper layer 232). You can say that. This point is the same for the diffracted X-ray spectra of Comparative Examples 1 and 2.
  • FIG. 7 shows the diffracted X-ray spectrum of Example 1.
  • the diffraction angle 2 ⁇ had a peak in the range of 56 degrees or more and 60 degrees or less and 41 degrees or more and 47 degrees or less. However, there was no peak in the range where the diffraction angle 2 ⁇ was 35 degrees or more and 38 degrees or less.
  • Table 1 shows the presence or absence of peaks in the range of each diffraction angle 2 ⁇ of Example 1.
  • the substrate 50 with a conductive film of Example 1 was manufactured.
  • Example 1 the evaluation thin film of Example 1 in which a conductive film was formed on the substrate 10 under the same film forming conditions as described above was produced.
  • the film thickness reduction amount (nm) of the conductive film-attached substrate 50 of Example 1 by SPM cleaning was calculated by measuring the film thickness before and after one SPM cleaning under the following cleaning conditions.
  • Cleaning liquid H 2 SO 4 : H 2 O 2 2: 1 (weight ratio)
  • Cleaning temperature 120 ° C Cleaning time 10 minutes
  • the substrate 50 with a conductive film of Example 1 was manufactured and evaluated.
  • the conductive film-attached substrate 50 of Comparative Example 1 has a conductive film 23 of a lower layer 231 of the CrON film and an upper layer 232 of the CrN film.
  • the film formation conditions (N 2 gas flow rate) and the atomic ratio of CrN film of the conductive film 23 of Comparative Example 1 (upper layer 232) is different from the case of Example 1. Other than that, it is the same as in Example 1.
  • the CrN film (upper layer 232) of Comparative Example 1 was formed with a film thickness of 180 nm.
  • XPS method X-ray photoelectron spectroscopy
  • the conductive film 23 (upper layer 232) of Comparative Example 1 was measured for the diffraction X-ray intensity with respect to the diffraction angle 2 ⁇ by the X-ray diffraction method using CuK ⁇ rays.
  • FIG. 8 shows the diffracted X-ray spectrum of Comparative Example 1.
  • the upper layer 232 of the conductive film 23 of Comparative Example 1 has a diffraction angle 2 ⁇ in a range of 56 degrees or more and 60 degrees or less, a range of 41 degrees or more and 47 degrees or less, and 35 degrees. No peak was present in any of the ranges above 38 degrees and below. From this, it can be said that the conductive film 23 of Comparative Example 1 is a thin film having an amorphous structure. Table 1 shows the presence or absence of peaks in the range of each diffraction angle 2 ⁇ of Comparative Example 1.
  • the substrate 50 with a conductive film of Comparative Example 1 was manufactured and evaluated.
  • the conductive film-attached substrate 50 of Comparative Example 2 is different from the conductive film 23 of Example 1 in that the conductive film 23 is composed of only the upper layer 232 of Example 1. Other than that, it is the same as in Example 1. That is, the conductive film 23 of Comparative Example 1 is a CrN film formed with a film thickness of 180 nm under the same film forming conditions as the upper layer 232 of Example 1.
  • the composition (atomic%) of the conductive film (CrN film) 232 was measured by X-ray photoelectron spectroscopy (XPS method), chromium (Cr) was 91 atomic% and nitrogen (N) was 9 atomic%.
  • Example 2 Similar to Example 1, the conductive film 23 of Comparative Example 2 was measured for the diffraction X-ray intensity with respect to the diffraction angle 2 ⁇ by the X-ray diffraction method using CuK ⁇ rays. As a result, it had the same tendency as the upper layer 232 of Example 1.
  • the substrate 50 with a conductive film of Comparative Example 2 was manufactured and evaluated.
  • Example 1 Comparative Example 1 and Comparative Example 2
  • the sheet resistance of the conductive film 23 of the conductive film-attached substrate 50 of Example 1 was 150 ⁇ / ⁇ or less, which was a satisfactory value as the conductive film 23 of the reflective mask 40.
  • the amount of film thinning by SPM cleaning of the conductive film 23 of Example 1 was 0.1 nm, which was a satisfactory value as the conductive film 23 of the reflective mask 40.
  • the surface roughness (Rms) of the conductive film 23 of Example 1 was 0.31 nm, it can be said that the generation of particles due to the rubbing between the conductive film 23 and the electrostatic chuck can be prevented.
  • the sheet resistance of the conductive film 23 of the conductive film-attached substrate 50 of Comparative Example 1 was 150 ⁇ / ⁇ or less, which was a satisfactory value as the conductive film 23 of the reflective mask 40.
  • the surface roughness (Rms) of Comparative Example 1 was 0.28 nm, it can be said that the generation of particles due to the rubbing between the conductive film 23 and the electrostatic chuck can be prevented.
  • the amount of film thinned by SPM cleaning of the conductive film 23 of Comparative Example 1 was 1.4 nm, which was not a satisfactory value as the conductive film 23 of the reflective mask 40.
  • the sheet resistance of the conductive film 23 of the conductive film-attached substrate 50 of Comparative Example 2 was 150 ⁇ / ⁇ or less, which was a satisfactory value as the conductive film 23 of the reflective mask 40.
  • the amount of film thinning by SPM cleaning of the conductive film 23 of Comparative Example 2 was 0.1 nm, which was a satisfactory value as the conductive film 23 of the reflective mask 40.
  • the surface roughness (Rms) of the conductive film 23 of Comparative Example 2 was 0.71 nm, it can be said that it is difficult to prevent the generation of particles due to the rubbing between the conductive film 23 and the electrostatic chuck.
  • the conductive film 23 of the reflective mask 40 of Example 1 is a conductive film 23 having excellent chemical resistance and a small surface roughness (Rms).
  • the substrate 20 with a multilayer reflective film of Example 1 Next, the substrate 20 with a multilayer reflective film of Example 1 will be described.
  • the multilayer reflective film 21 and the protective film 22 are formed on the front main surface of the substrate 10 on the side opposite to the side on which the conductive film 23 of the conductive film-attached substrate 50 manufactured as described above is formed.
  • the substrate 20 with a reflective film was manufactured.
  • the substrate 20 with a multilayer reflective film was manufactured as follows.
  • a multilayer reflective film 21 was formed on the front main surface of the substrate 10 on the side opposite to the side on which the conductive film 23 was formed.
  • the multilayer reflective film 21 formed on the substrate 10 is a periodic multilayer reflective film 21 composed of Mo and Si in order to obtain a multilayer reflective film 21 suitable for EUV light having a wavelength of 13.5 nm.
  • the multilayer reflective film 21 was formed by alternately laminating Mo layers and Si layers on a substrate 10 by an ion beam sputtering method in an Ar gas atmosphere using a Mo target and a Si target. First, a Si film was formed with a thickness of 4.2 nm, and then a Mo film was formed with a thickness of 2.8 nm.
  • 40 cycles are used, but the cycle is not limited to this, and 60 cycles may be used, for example.
  • the number of cycles is 60, the number of steps is larger than that of 40 cycles, but the reflectance to EUV light can be increased.
  • a protective film 22 made of a Ru film was formed with a thickness of 2.5 nm by an ion beam sputtering method using a Ru target.
  • the substrate 20 with the multilayer reflective film of Example 1 was manufactured.
  • the reflective mask blank 30 was manufactured by forming the pattern forming thin film 24 on the protective film 22 of the substrate 20 with the multilayer reflective film manufactured as described above.
  • a pattern-forming thin film 24 was formed on the protective film 22 of the substrate 20 with a multilayer reflective film by the DC magnetron sputtering method.
  • the pattern-forming thin film 24 was a laminated thin film 24 composed of two layers, a TaN film which is an absorption layer and a TaO film which is a low reflection layer.
  • a TaN film was formed as an absorption layer on the surface of the protective film 22 of the substrate 20 with the multilayer reflective film described above by the DC magnetron sputtering method.
  • This TaN film was formed by a reactive sputtering method in a mixed gas atmosphere of Ar gas and N 2 gas in which a substrate 20 with a multilayer reflective film was opposed to a Ta target.
  • a TaO film (low reflection layer) was further formed on the TaN film by the DC magnetron sputtering method.
  • this TaO film was formed by a reactive sputtering method in a mixed gas atmosphere of Ar and O 2 with the substrate 20 with a multilayer reflective film facing the Ta target.
  • the reflective mask blank 30 of Example 1 was manufactured.
  • Reflective mask 40 Next, the reflective mask 40 of Example 1 will be described.
  • the reflective mask 40 was manufactured using the reflective mask blank 30 described above.
  • 6A to 6D are schematic cross-sectional views of a main part showing a process of manufacturing the reflective mask 40 from the reflective mask blank 30.
  • the reflective mask blank 30 was formed by forming a resist film 32 with a thickness of 150 nm on the pattern-forming thin film 24 of the reflective mask blank 30 of Example 1 described above (FIG. 6A). A desired pattern was drawn (exposed) on the resist film 32, further developed and rinsed to form a predetermined resist pattern 32a (FIG. 6B). Next, the pattern of the pattern-forming thin film 24 (thin film pattern 24a) was formed by performing dry etching of the pattern-forming thin film 24 using the resist pattern 32a as a mask (FIG. 6C). Incidentally, TaN film and a TaO film pattern formation thin film 24 has both been patterned by dry etching using a mixed gas of CF 4 and He.
  • the resist pattern 32a was removed by ashing or a resist stripping solution. Finally, the same SPM cleaning as the cleaning conditions for measuring the amount of film thinning by the SPM cleaning described above was performed. As described above, the reflective mask 40 was manufactured (FIG. 6D). If necessary, a mask defect inspection can be performed after wet cleaning, and the mask defect can be corrected as appropriate.
  • the conductive film-attached substrate 50 having the conductive film 23 of Example 1 of this embodiment is excellent in SPM cleaning resistance. Therefore, the reflective mask 40 having the conductive film 23 of the present embodiment is also excellent in SPM cleaning resistance. Therefore, even when the reflective mask 40 is subjected to SPM cleaning, the sheet resistance and mechanical strength required for the conductive film 23 are not impaired. Therefore, even if the reflective mask 40 of the present embodiment is used for manufacturing a semiconductor device, it can be fixed by the electrostatic chuck without any problem. Further, the surface roughness (Rms) of the conductive film-attached substrate 50 having the conductive film 23 of Example 1 of this embodiment is small.
  • the reflective mask 40 of the present embodiment is used for manufacturing a semiconductor device, it can be said that a semiconductor device having a fine and highly accurate transfer pattern can be manufactured.
  • Each reflective mask 40 produced in Example 1 was set in an EUV exposure apparatus, and EUV exposure was performed on a wafer having a film to be processed and a resist film formed on a semiconductor substrate. Then, by developing this exposed resist film, a resist pattern was formed on the semiconductor substrate on which the film to be processed was formed.
  • This resist pattern can be transferred to a film to be processed by etching, and a semiconductor device having desired characteristics can be manufactured by undergoing various steps such as insulating film, forming a conductive film, introducing a dopant, and annealing. did it.
  • Mask blank substrate 20 Multilayer reflective film substrate 21 Multilayer reflective film 22 Protective film 23 Conductive film 24 Pattern forming thin film 24a Thin film pattern 25 Etching mask film 30 Reflective mask blank 32 Resist film 32a Resist pattern 40 Reflective mask 50 Conductive Substrate with film 231 Lower layer 232 Upper layer

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Physical Vapour Deposition (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
PCT/JP2020/027298 2019-08-30 2020-07-13 導電膜付基板、反射型マスクブランク及び反射型マスク、並びに半導体デバイスの製造方法 Ceased WO2021039163A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US17/635,333 US12572065B2 (en) 2019-08-30 2020-07-13 Substrate with conductive film, reflective mask blank, reflective mask, and method for manufacturing semiconductor device
KR1020227004851A KR20220051172A (ko) 2019-08-30 2020-07-13 도전막 부착 기판, 반사형 마스크 블랭크 및 반사형 마스크, 그리고 반도체 디바이스의 제조 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019158348A JP7350571B2 (ja) 2019-08-30 2019-08-30 導電膜付基板、反射型マスクブランク及び反射型マスク、並びに半導体デバイスの製造方法
JP2019-158348 2019-08-30

Publications (1)

Publication Number Publication Date
WO2021039163A1 true WO2021039163A1 (ja) 2021-03-04

Family

ID=74684482

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2020/027298 Ceased WO2021039163A1 (ja) 2019-08-30 2020-07-13 導電膜付基板、反射型マスクブランク及び反射型マスク、並びに半導体デバイスの製造方法

Country Status (5)

Country Link
US (1) US12572065B2 (https=)
JP (2) JP7350571B2 (https=)
KR (1) KR20220051172A (https=)
TW (2) TWI855125B (https=)
WO (1) WO2021039163A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230213849A1 (en) * 2021-12-31 2023-07-06 Skc Solmics Co., Ltd. Blank mask and photomask using the same

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020261986A1 (ja) * 2019-06-27 2020-12-30 Hoya株式会社 薄膜付基板、多層反射膜付基板、反射型マスクブランク、反射型マスク及び半導体装置の製造方法
JPWO2024071026A1 (https=) * 2022-09-28 2024-04-04
KR20250060932A (ko) * 2023-03-17 2025-05-07 에이지씨 가부시키가이샤 Euv 리소그래피용 반사형 마스크 블랭크 및 도전막 구비 기판
JP2024142243A (ja) * 2023-03-29 2024-10-10 Hoya株式会社 導電膜付き基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク、および半導体装置の製造方法
KR102908064B1 (ko) * 2023-04-03 2026-01-05 주식회사 에스앤에스텍 후면 도전막을 구비한 극자외선 리소그래피용 블랭크마스크 및 포토마스크
JP2025095450A (ja) * 2023-12-14 2025-06-26 Hoya株式会社 導電膜付き基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク、および半導体装置の製造方法
WO2025239181A1 (ja) * 2024-05-16 2025-11-20 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクの製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011124612A (ja) * 2003-12-25 2011-06-23 Hoya Corp 多層反射膜付き基板、露光用反射型マスクブランクス及び露光用反射型マスク、並びにそれらの製造方法
WO2012105698A1 (ja) * 2011-02-04 2012-08-09 旭硝子株式会社 導電膜付基板、多層反射膜付基板、およびｅｕｖリソグラフィ用反射型マスクブランク
JP2012178577A (ja) * 2006-12-15 2012-09-13 Asahi Glass Co Ltd Ｅｕｖリソグラフィ用反射型マスクブランク、および該マスクブランク用の機能膜付基板
JP2015215602A (ja) * 2014-04-22 2015-12-03 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、該マスクブランク用の機能膜付基板および、それらの製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU5597000A (en) 1999-06-07 2000-12-28 Regents Of The University Of California, The Coatings on reflective mask substrates
JP4908119B2 (ja) * 2005-10-19 2012-04-04 株式会社リガク 蛍光ｘ線分析装置
JP2010168603A (ja) * 2009-01-20 2010-08-05 Ntn Corp 耐摩耗性ＣｒＮ膜
KR101877896B1 (ko) * 2013-09-27 2018-07-12 호야 가부시키가이샤 도전막 부착 기판, 다층 반사막 부착 기판, 반사형 마스크 블랭크 및 반사형 마스크, 그리고 반도체 장치의 제조방법
US9897910B2 (en) 2014-12-24 2018-02-20 Taiwan Semiconductor Manufacturing Company, Ltd. Treating a capping layer of a mask
SG11201710317RA (en) 2015-06-17 2018-01-30 Hoya Corp Substrate with electrically conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device
JP6863169B2 (ja) * 2017-08-15 2021-04-21 Ａｇｃ株式会社 反射型マスクブランク、および反射型マスク
US11435660B2 (en) 2017-11-22 2022-09-06 Taiwan Semiconductor Manufacturing Co., Ltd. Photomask and method of fabricating a photomask

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011124612A (ja) * 2003-12-25 2011-06-23 Hoya Corp 多層反射膜付き基板、露光用反射型マスクブランクス及び露光用反射型マスク、並びにそれらの製造方法
JP2012178577A (ja) * 2006-12-15 2012-09-13 Asahi Glass Co Ltd Ｅｕｖリソグラフィ用反射型マスクブランク、および該マスクブランク用の機能膜付基板
WO2012105698A1 (ja) * 2011-02-04 2012-08-09 旭硝子株式会社 導電膜付基板、多層反射膜付基板、およびｅｕｖリソグラフィ用反射型マスクブランク
JP2015215602A (ja) * 2014-04-22 2015-12-03 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、該マスクブランク用の機能膜付基板および、それらの製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230213849A1 (en) * 2021-12-31 2023-07-06 Skc Solmics Co., Ltd. Blank mask and photomask using the same

Also Published As

Publication number Publication date
JP2021039144A (ja) 2021-03-11
JP2023171382A (ja) 2023-12-01
JP7569428B2 (ja) 2024-10-17
TW202449496A (zh) 2024-12-16
TWI855125B (zh) 2024-09-11
KR20220051172A (ko) 2022-04-26
US20220283490A1 (en) 2022-09-08
US12572065B2 (en) 2026-03-10
JP7350571B2 (ja) 2023-09-26
TW202122907A (zh) 2021-06-16

Similar Documents

Publication Publication Date Title
JP7401356B2 (ja) 多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法
JP7569428B2 (ja) 導電膜付基板、反射型マスクブランク及び反射型マスク、並びに半導体デバイスの製造方法
JP7746160B2 (ja) 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
JP7368564B2 (ja) 多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法
WO2022138434A1 (ja) 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
JP2021056502A (ja) 多層反射膜付き基板、反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
JP2017116931A (ja) 多層反射膜付き基板、反射型マスクブランク、反射型マスク及び半導体装置の製造方法
JP6855645B1 (ja) 薄膜付基板、多層反射膜付基板、反射型マスクブランク、反射型マスク及び半導体装置の製造方法
JP7288782B2 (ja) 多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法
JP7271760B2 (ja) 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体デバイスの製造方法
JP6864952B2 (ja) 導電膜付き基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク及び半導体装置の製造方法
CN111752085A (zh) 带多层反射膜的基板、反射型掩模坯料及反射型掩模、以及半导体装置的制造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20858875

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 20858875

Country of ref document: EP

Kind code of ref document: A1

WWG Wipo information: grant in national office

Ref document number: 17635333

Country of ref document: US