JP7350571B2 - 導電膜付基板、反射型マスクブランク及び反射型マスク、並びに半導体デバイスの製造方法 - Google Patents

導電膜付基板、反射型マスクブランク及び反射型マスク、並びに半導体デバイスの製造方法 Download PDF

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JP7350571B2
JP7350571B2 JP2019158348A JP2019158348A JP7350571B2 JP 7350571 B2 JP7350571 B2 JP 7350571B2 JP 2019158348 A JP2019158348 A JP 2019158348A JP 2019158348 A JP2019158348 A JP 2019158348A JP 7350571 B2 JP7350571 B2 JP 7350571B2
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Prior art keywords
film
conductive film
reflective mask
substrate
upper layer
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JP2021039144A (ja
JP2021039144A5 (https=
Inventor
真徳 中川
崇 打田
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Hoya Corp
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Hoya Corp
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Priority to JP2019158348A priority Critical patent/JP7350571B2/ja
Priority to KR1020227004851A priority patent/KR20220051172A/ko
Priority to US17/635,333 priority patent/US12572065B2/en
Priority to PCT/JP2020/027298 priority patent/WO2021039163A1/ja
Priority to TW113131372A priority patent/TW202449496A/zh
Priority to TW109126338A priority patent/TWI855125B/zh
Publication of JP2021039144A publication Critical patent/JP2021039144A/ja
Publication of JP2021039144A5 publication Critical patent/JP2021039144A5/ja
Priority to JP2023148295A priority patent/JP7569428B2/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Physical Vapour Deposition (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2019158348A 2019-08-30 2019-08-30 導電膜付基板、反射型マスクブランク及び反射型マスク、並びに半導体デバイスの製造方法 Active JP7350571B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2019158348A JP7350571B2 (ja) 2019-08-30 2019-08-30 導電膜付基板、反射型マスクブランク及び反射型マスク、並びに半導体デバイスの製造方法
US17/635,333 US12572065B2 (en) 2019-08-30 2020-07-13 Substrate with conductive film, reflective mask blank, reflective mask, and method for manufacturing semiconductor device
PCT/JP2020/027298 WO2021039163A1 (ja) 2019-08-30 2020-07-13 導電膜付基板、反射型マスクブランク及び反射型マスク、並びに半導体デバイスの製造方法
KR1020227004851A KR20220051172A (ko) 2019-08-30 2020-07-13 도전막 부착 기판, 반사형 마스크 블랭크 및 반사형 마스크, 그리고 반도체 디바이스의 제조 방법
TW113131372A TW202449496A (zh) 2019-08-30 2020-08-04 附導電膜之基板、反射型光罩基底及反射型光罩、以及半導體裝置之製造方法
TW109126338A TWI855125B (zh) 2019-08-30 2020-08-04 附導電膜之基板、反射型光罩基底及反射型光罩、以及半導體裝置之製造方法
JP2023148295A JP7569428B2 (ja) 2019-08-30 2023-09-13 導電膜付基板、反射型マスクブランク及び反射型マスク、並びに半導体デバイスの製造方法

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JP2019158348A JP7350571B2 (ja) 2019-08-30 2019-08-30 導電膜付基板、反射型マスクブランク及び反射型マスク、並びに半導体デバイスの製造方法

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JP2021039144A JP2021039144A (ja) 2021-03-11
JP2021039144A5 JP2021039144A5 (https=) 2022-08-23
JP7350571B2 true JP7350571B2 (ja) 2023-09-26

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JP2019158348A Active JP7350571B2 (ja) 2019-08-30 2019-08-30 導電膜付基板、反射型マスクブランク及び反射型マスク、並びに半導体デバイスの製造方法
JP2023148295A Active JP7569428B2 (ja) 2019-08-30 2023-09-13 導電膜付基板、反射型マスクブランク及び反射型マスク、並びに半導体デバイスの製造方法

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US (1) US12572065B2 (https=)
JP (2) JP7350571B2 (https=)
KR (1) KR20220051172A (https=)
TW (2) TWI855125B (https=)
WO (1) WO2021039163A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020261986A1 (ja) * 2019-06-27 2020-12-30 Hoya株式会社 薄膜付基板、多層反射膜付基板、反射型マスクブランク、反射型マスク及び半導体装置の製造方法
JP7482197B2 (ja) * 2021-12-31 2024-05-13 エスケー エンパルス カンパニー リミテッド ブランクマスク及びそれを用いたフォトマスク
JPWO2024071026A1 (https=) * 2022-09-28 2024-04-04
KR20250060932A (ko) * 2023-03-17 2025-05-07 에이지씨 가부시키가이샤 Euv 리소그래피용 반사형 마스크 블랭크 및 도전막 구비 기판
JP2024142243A (ja) * 2023-03-29 2024-10-10 Hoya株式会社 導電膜付き基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク、および半導体装置の製造方法
KR102908064B1 (ko) * 2023-04-03 2026-01-05 주식회사 에스앤에스텍 후면 도전막을 구비한 극자외선 리소그래피용 블랭크마스크 및 포토마스크
JP2025095450A (ja) * 2023-12-14 2025-06-26 Hoya株式会社 導電膜付き基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク、および半導体装置の製造方法
WO2025239181A1 (ja) * 2024-05-16 2025-11-20 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクの製造方法

Citations (4)

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Publication number Priority date Publication date Assignee Title
JP2011124612A (ja) 2003-12-25 2011-06-23 Hoya Corp 多層反射膜付き基板、露光用反射型マスクブランクス及び露光用反射型マスク、並びにそれらの製造方法
WO2012105698A1 (ja) 2011-02-04 2012-08-09 旭硝子株式会社 導電膜付基板、多層反射膜付基板、およびｅｕｖリソグラフィ用反射型マスクブランク
JP2012178577A (ja) 2006-12-15 2012-09-13 Asahi Glass Co Ltd Ｅｕｖリソグラフィ用反射型マスクブランク、および該マスクブランク用の機能膜付基板
JP2015215602A (ja) 2014-04-22 2015-12-03 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、該マスクブランク用の機能膜付基板および、それらの製造方法

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AU5597000A (en) 1999-06-07 2000-12-28 Regents Of The University Of California, The Coatings on reflective mask substrates
JP4908119B2 (ja) * 2005-10-19 2012-04-04 株式会社リガク 蛍光ｘ線分析装置
JP2010168603A (ja) * 2009-01-20 2010-08-05 Ntn Corp 耐摩耗性ＣｒＮ膜
KR101877896B1 (ko) * 2013-09-27 2018-07-12 호야 가부시키가이샤 도전막 부착 기판, 다층 반사막 부착 기판, 반사형 마스크 블랭크 및 반사형 마스크, 그리고 반도체 장치의 제조방법
US9897910B2 (en) 2014-12-24 2018-02-20 Taiwan Semiconductor Manufacturing Company, Ltd. Treating a capping layer of a mask
SG11201710317RA (en) 2015-06-17 2018-01-30 Hoya Corp Substrate with electrically conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device
JP6863169B2 (ja) * 2017-08-15 2021-04-21 Ａｇｃ株式会社 反射型マスクブランク、および反射型マスク
US11435660B2 (en) 2017-11-22 2022-09-06 Taiwan Semiconductor Manufacturing Co., Ltd. Photomask and method of fabricating a photomask

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011124612A (ja) 2003-12-25 2011-06-23 Hoya Corp 多層反射膜付き基板、露光用反射型マスクブランクス及び露光用反射型マスク、並びにそれらの製造方法
JP2012178577A (ja) 2006-12-15 2012-09-13 Asahi Glass Co Ltd Ｅｕｖリソグラフィ用反射型マスクブランク、および該マスクブランク用の機能膜付基板
WO2012105698A1 (ja) 2011-02-04 2012-08-09 旭硝子株式会社 導電膜付基板、多層反射膜付基板、およびｅｕｖリソグラフィ用反射型マスクブランク
JP2015215602A (ja) 2014-04-22 2015-12-03 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、該マスクブランク用の機能膜付基板および、それらの製造方法

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JP2021039144A (ja) 2021-03-11
JP2023171382A (ja) 2023-12-01
JP7569428B2 (ja) 2024-10-17
TW202449496A (zh) 2024-12-16
TWI855125B (zh) 2024-09-11
KR20220051172A (ko) 2022-04-26
US20220283490A1 (en) 2022-09-08
US12572065B2 (en) 2026-03-10
WO2021039163A1 (ja) 2021-03-04
TW202122907A (zh) 2021-06-16

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