JP2021039144A5 - - Google Patents
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- Publication number
- JP2021039144A5 JP2021039144A5 JP2019158348A JP2019158348A JP2021039144A5 JP 2021039144 A5 JP2021039144 A5 JP 2021039144A5 JP 2019158348 A JP2019158348 A JP 2019158348A JP 2019158348 A JP2019158348 A JP 2019158348A JP 2021039144 A5 JP2021039144 A5 JP 2021039144A5
- Authority
- JP
- Japan
- Prior art keywords
- conductive film
- substrate
- upper layer
- degrees
- reflective mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000010408 film Substances 0.000 claims description 56
- 239000000758 substrate Substances 0.000 claims description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- 239000011651 chromium Substances 0.000 claims description 15
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 14
- 229910052804 chromium Inorganic materials 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 4
- 238000002441 X-ray diffraction Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims 4
- 230000001681 protective effect Effects 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
- 230000000052 comparative effect Effects 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 5
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 229910001882 dioxygen Inorganic materials 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 238000002083 X-ray spectrum Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019158348A JP7350571B2 (ja) | 2019-08-30 | 2019-08-30 | 導電膜付基板、反射型マスクブランク及び反射型マスク、並びに半導体デバイスの製造方法 |
| US17/635,333 US12572065B2 (en) | 2019-08-30 | 2020-07-13 | Substrate with conductive film, reflective mask blank, reflective mask, and method for manufacturing semiconductor device |
| PCT/JP2020/027298 WO2021039163A1 (ja) | 2019-08-30 | 2020-07-13 | 導電膜付基板、反射型マスクブランク及び反射型マスク、並びに半導体デバイスの製造方法 |
| KR1020227004851A KR20220051172A (ko) | 2019-08-30 | 2020-07-13 | 도전막 부착 기판, 반사형 마스크 블랭크 및 반사형 마스크, 그리고 반도체 디바이스의 제조 방법 |
| TW113131372A TW202449496A (zh) | 2019-08-30 | 2020-08-04 | 附導電膜之基板、反射型光罩基底及反射型光罩、以及半導體裝置之製造方法 |
| TW109126338A TWI855125B (zh) | 2019-08-30 | 2020-08-04 | 附導電膜之基板、反射型光罩基底及反射型光罩、以及半導體裝置之製造方法 |
| JP2023148295A JP7569428B2 (ja) | 2019-08-30 | 2023-09-13 | 導電膜付基板、反射型マスクブランク及び反射型マスク、並びに半導体デバイスの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019158348A JP7350571B2 (ja) | 2019-08-30 | 2019-08-30 | 導電膜付基板、反射型マスクブランク及び反射型マスク、並びに半導体デバイスの製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023148295A Division JP7569428B2 (ja) | 2019-08-30 | 2023-09-13 | 導電膜付基板、反射型マスクブランク及び反射型マスク、並びに半導体デバイスの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021039144A JP2021039144A (ja) | 2021-03-11 |
| JP2021039144A5 true JP2021039144A5 (https=) | 2022-08-23 |
| JP7350571B2 JP7350571B2 (ja) | 2023-09-26 |
Family
ID=74684482
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019158348A Active JP7350571B2 (ja) | 2019-08-30 | 2019-08-30 | 導電膜付基板、反射型マスクブランク及び反射型マスク、並びに半導体デバイスの製造方法 |
| JP2023148295A Active JP7569428B2 (ja) | 2019-08-30 | 2023-09-13 | 導電膜付基板、反射型マスクブランク及び反射型マスク、並びに半導体デバイスの製造方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023148295A Active JP7569428B2 (ja) | 2019-08-30 | 2023-09-13 | 導電膜付基板、反射型マスクブランク及び反射型マスク、並びに半導体デバイスの製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12572065B2 (https=) |
| JP (2) | JP7350571B2 (https=) |
| KR (1) | KR20220051172A (https=) |
| TW (2) | TWI855125B (https=) |
| WO (1) | WO2021039163A1 (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020261986A1 (ja) * | 2019-06-27 | 2020-12-30 | Hoya株式会社 | 薄膜付基板、多層反射膜付基板、反射型マスクブランク、反射型マスク及び半導体装置の製造方法 |
| JP7482197B2 (ja) * | 2021-12-31 | 2024-05-13 | エスケー エンパルス カンパニー リミテッド | ブランクマスク及びそれを用いたフォトマスク |
| JPWO2024071026A1 (https=) * | 2022-09-28 | 2024-04-04 | ||
| KR20250060932A (ko) * | 2023-03-17 | 2025-05-07 | 에이지씨 가부시키가이샤 | Euv 리소그래피용 반사형 마스크 블랭크 및 도전막 구비 기판 |
| JP2024142243A (ja) * | 2023-03-29 | 2024-10-10 | Hoya株式会社 | 導電膜付き基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク、および半導体装置の製造方法 |
| KR102908064B1 (ko) * | 2023-04-03 | 2026-01-05 | 주식회사 에스앤에스텍 | 후면 도전막을 구비한 극자외선 리소그래피용 블랭크마스크 및 포토마스크 |
| JP2025095450A (ja) * | 2023-12-14 | 2025-06-26 | Hoya株式会社 | 導電膜付き基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク、および半導体装置の製造方法 |
| WO2025239181A1 (ja) * | 2024-05-16 | 2025-11-20 | Ａｇｃ株式会社 | 反射型マスクブランク、反射型マスク、反射型マスクの製造方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU5597000A (en) | 1999-06-07 | 2000-12-28 | Regents Of The University Of California, The | Coatings on reflective mask substrates |
| US20050238922A1 (en) | 2003-12-25 | 2005-10-27 | Hoya Corporation | Substrate with a multilayer reflection film, reflection type mask blank for exposure, reflection type mask for exposure and methods of manufacturing them |
| JP4908119B2 (ja) * | 2005-10-19 | 2012-04-04 | 株式会社リガク | 蛍光ｘ線分析装置 |
| WO2008072706A1 (ja) | 2006-12-15 | 2008-06-19 | Asahi Glass Company, Limited | Ｅｕｖリソグラフィ用反射型マスクブランク、および該マスクブランク用の機能膜付基板 |
| JP2010168603A (ja) * | 2009-01-20 | 2010-08-05 | Ntn Corp | 耐摩耗性ＣｒＮ膜 |
| KR101857844B1 (ko) * | 2011-02-04 | 2018-05-14 | 아사히 가라스 가부시키가이샤 | 도전막이 형성된 기판, 다층 반사막이 형성된 기판, 및 ｅｕｖ 리소그래피용 반사형 마스크 블랭크 |
| KR101877896B1 (ko) * | 2013-09-27 | 2018-07-12 | 호야 가부시키가이샤 | 도전막 부착 기판, 다층 반사막 부착 기판, 반사형 마스크 블랭크 및 반사형 마스크, 그리고 반도체 장치의 제조방법 |
| US9618836B2 (en) | 2014-04-22 | 2017-04-11 | Asahi Glass Company, Limited | Reflective mask blank for EUV lithography, substrate with funtion film for the mask blank, and methods for their production |
| US9897910B2 (en) | 2014-12-24 | 2018-02-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Treating a capping layer of a mask |
| SG11201710317RA (en) | 2015-06-17 | 2018-01-30 | Hoya Corp | Substrate with electrically conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device |
| JP6863169B2 (ja) * | 2017-08-15 | 2021-04-21 | Ａｇｃ株式会社 | 反射型マスクブランク、および反射型マスク |
| US11435660B2 (en) | 2017-11-22 | 2022-09-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Photomask and method of fabricating a photomask |
-
2019
- 2019-08-30 JP JP2019158348A patent/JP7350571B2/ja active Active
-
2020
- 2020-07-13 US US17/635,333 patent/US12572065B2/en active Active
- 2020-07-13 KR KR1020227004851A patent/KR20220051172A/ko active Pending
- 2020-07-13 WO PCT/JP2020/027298 patent/WO2021039163A1/ja not_active Ceased
- 2020-08-04 TW TW109126338A patent/TWI855125B/zh active
- 2020-08-04 TW TW113131372A patent/TW202449496A/zh unknown
-
2023
- 2023-09-13 JP JP2023148295A patent/JP7569428B2/ja active Active
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