KR20220051172A - 도전막 부착 기판, 반사형 마스크 블랭크 및 반사형 마스크, 그리고 반도체 디바이스의 제조 방법 - Google Patents

도전막 부착 기판, 반사형 마스크 블랭크 및 반사형 마스크, 그리고 반도체 디바이스의 제조 방법 Download PDF

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Publication number
KR20220051172A
KR20220051172A KR1020227004851A KR20227004851A KR20220051172A KR 20220051172 A KR20220051172 A KR 20220051172A KR 1020227004851 A KR1020227004851 A KR 1020227004851A KR 20227004851 A KR20227004851 A KR 20227004851A KR 20220051172 A KR20220051172 A KR 20220051172A
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KR
South Korea
Prior art keywords
film
conductive film
substrate
reflective mask
upper layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
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KR1020227004851A
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English (en)
Korean (ko)
Inventor
마사노리 나카가와
다카시 우치다
Original Assignee
호야 가부시키가이샤
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Publication of KR20220051172A publication Critical patent/KR20220051172A/ko
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Physical Vapour Deposition (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020227004851A 2019-08-30 2020-07-13 도전막 부착 기판, 반사형 마스크 블랭크 및 반사형 마스크, 그리고 반도체 디바이스의 제조 방법 Pending KR20220051172A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019158348A JP7350571B2 (ja) 2019-08-30 2019-08-30 導電膜付基板、反射型マスクブランク及び反射型マスク、並びに半導体デバイスの製造方法
JPJP-P-2019-158348 2019-08-30
PCT/JP2020/027298 WO2021039163A1 (ja) 2019-08-30 2020-07-13 導電膜付基板、反射型マスクブランク及び反射型マスク、並びに半導体デバイスの製造方法

Publications (1)

Publication Number Publication Date
KR20220051172A true KR20220051172A (ko) 2022-04-26

Family

ID=74684482

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227004851A Pending KR20220051172A (ko) 2019-08-30 2020-07-13 도전막 부착 기판, 반사형 마스크 블랭크 및 반사형 마스크, 그리고 반도체 디바이스의 제조 방법

Country Status (5)

Country Link
US (1) US12572065B2 (https=)
JP (2) JP7350571B2 (https=)
KR (1) KR20220051172A (https=)
TW (2) TWI855125B (https=)
WO (1) WO2021039163A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240148049A (ko) * 2023-04-03 2024-10-11 주식회사 에스앤에스텍 후면 도전막을 구비한 극자외선 리소그래피용 블랭크마스크 및 포토마스크

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020261986A1 (ja) * 2019-06-27 2020-12-30 Hoya株式会社 薄膜付基板、多層反射膜付基板、反射型マスクブランク、反射型マスク及び半導体装置の製造方法
JP7482197B2 (ja) * 2021-12-31 2024-05-13 エスケー エンパルス カンパニー リミテッド ブランクマスク及びそれを用いたフォトマスク
JPWO2024071026A1 (https=) * 2022-09-28 2024-04-04
KR20250060932A (ko) * 2023-03-17 2025-05-07 에이지씨 가부시키가이샤 Euv 리소그래피용 반사형 마스크 블랭크 및 도전막 구비 기판
JP2024142243A (ja) * 2023-03-29 2024-10-10 Hoya株式会社 導電膜付き基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク、および半導体装置の製造方法
JP2025095450A (ja) * 2023-12-14 2025-06-26 Hoya株式会社 導電膜付き基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク、および半導体装置の製造方法
WO2025239181A1 (ja) * 2024-05-16 2025-11-20 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクの製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003501823A (ja) 1999-06-07 2003-01-14 ザ、リージェンツ、オブ、ザ、ユニバーシティ、オブ、カリフォルニア 反射マスク基板のコーティング
WO2008072706A1 (ja) 2006-12-15 2008-06-19 Asahi Glass Company, Limited Ｅｕｖリソグラフィ用反射型マスクブランク、および該マスクブランク用の機能膜付基板

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US20050238922A1 (en) 2003-12-25 2005-10-27 Hoya Corporation Substrate with a multilayer reflection film, reflection type mask blank for exposure, reflection type mask for exposure and methods of manufacturing them
JP4908119B2 (ja) * 2005-10-19 2012-04-04 株式会社リガク 蛍光ｘ線分析装置
JP2010168603A (ja) * 2009-01-20 2010-08-05 Ntn Corp 耐摩耗性ＣｒＮ膜
KR101857844B1 (ko) * 2011-02-04 2018-05-14 아사히 가라스 가부시키가이샤 도전막이 형성된 기판, 다층 반사막이 형성된 기판, 및 ｅｕｖ 리소그래피용 반사형 마스크 블랭크
KR101877896B1 (ko) * 2013-09-27 2018-07-12 호야 가부시키가이샤 도전막 부착 기판, 다층 반사막 부착 기판, 반사형 마스크 블랭크 및 반사형 마스크, 그리고 반도체 장치의 제조방법
US9618836B2 (en) 2014-04-22 2017-04-11 Asahi Glass Company, Limited Reflective mask blank for EUV lithography, substrate with funtion film for the mask blank, and methods for their production
US9897910B2 (en) 2014-12-24 2018-02-20 Taiwan Semiconductor Manufacturing Company, Ltd. Treating a capping layer of a mask
SG11201710317RA (en) 2015-06-17 2018-01-30 Hoya Corp Substrate with electrically conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device
JP6863169B2 (ja) * 2017-08-15 2021-04-21 Ａｇｃ株式会社 反射型マスクブランク、および反射型マスク
US11435660B2 (en) 2017-11-22 2022-09-06 Taiwan Semiconductor Manufacturing Co., Ltd. Photomask and method of fabricating a photomask

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003501823A (ja) 1999-06-07 2003-01-14 ザ、リージェンツ、オブ、ザ、ユニバーシティ、オブ、カリフォルニア 反射マスク基板のコーティング
WO2008072706A1 (ja) 2006-12-15 2008-06-19 Asahi Glass Company, Limited Ｅｕｖリソグラフィ用反射型マスクブランク、および該マスクブランク用の機能膜付基板

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240148049A (ko) * 2023-04-03 2024-10-11 주식회사 에스앤에스텍 후면 도전막을 구비한 극자외선 리소그래피용 블랭크마스크 및 포토마스크

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JP2021039144A (ja) 2021-03-11
JP2023171382A (ja) 2023-12-01
JP7569428B2 (ja) 2024-10-17
TW202449496A (zh) 2024-12-16
TWI855125B (zh) 2024-09-11
US20220283490A1 (en) 2022-09-08
US12572065B2 (en) 2026-03-10
JP7350571B2 (ja) 2023-09-26
WO2021039163A1 (ja) 2021-03-04
TW202122907A (zh) 2021-06-16

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