WO2021024858A1 - Élément pour dispositif de fabrication de semi-conducteurs - Google Patents

Élément pour dispositif de fabrication de semi-conducteurs Download PDF

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Publication number
WO2021024858A1
WO2021024858A1 PCT/JP2020/028876 JP2020028876W WO2021024858A1 WO 2021024858 A1 WO2021024858 A1 WO 2021024858A1 JP 2020028876 W JP2020028876 W JP 2020028876W WO 2021024858 A1 WO2021024858 A1 WO 2021024858A1
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WIPO (PCT)
Prior art keywords
rod
electrode
semiconductor manufacturing
ceramic
rods
Prior art date
Application number
PCT/JP2020/028876
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English (en)
Japanese (ja)
Inventor
隆二 田村
Original Assignee
日本碍子株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本碍子株式会社 filed Critical 日本碍子株式会社
Priority to KR1020227000620A priority Critical patent/KR20220019030A/ko
Priority to CN202080056190.2A priority patent/CN114245936A/zh
Priority to JP2021537246A priority patent/JP7331107B2/ja
Publication of WO2021024858A1 publication Critical patent/WO2021024858A1/fr
Priority to US17/644,361 priority patent/US11996313B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
    • H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
    • H05B3/283—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/68—Heating arrangements specially adapted for cooking plates or analogous hot-plates
    • H05B3/74—Non-metallic plates, e.g. vitroceramic, ceramic or glassceramic hobs, also including power or control circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/68—Heating arrangements specially adapted for cooking plates or analogous hot-plates
    • H05B3/74—Non-metallic plates, e.g. vitroceramic, ceramic or glassceramic hobs, also including power or control circuits
    • H05B3/748—Resistive heating elements, i.e. heating elements exposed to the air, e.g. coil wire heater
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2007—Holding mechanisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/016—Heaters using particular connecting means

Definitions

  • the present invention relates to a member for a semiconductor manufacturing apparatus.
  • a member for semiconductor manufacturing equipment having a structure in which a cylindrical ceramic shaft is connected to the back surface of a disk-shaped ceramic plate whose front surface is a wafer mounting surface may be used. ..
  • a member for such a semiconductor manufacturing apparatus a member in which a high frequency electrode (RF electrode) is embedded in a ceramic plate and plasma is generated by using the RF electrode is known.
  • RF electrode high frequency electrode
  • a plurality of RF rods are connected to the RF electrodes, and the plurality of RF rods are branched from one RF connector arranged inside the hollow of the ceramic shaft.
  • Patent Document 1 since a plurality of RF rods are provided instead of one RF rod, the current flowing through each RF rod can be reduced, and the amount of heat generated per RF rod is also reduced accordingly. .. Therefore, hot spots are less likely to occur on the ceramic plate.
  • the RF connector when the RF connector is arranged inside the hollow of the ceramic shaft as in Patent Document 1, the temperature inside the hollow of the ceramic shaft may rise due to the heat generated by the RF connector. In that case, even if the calorific value of the RF rod is small, the temperature of the RF rod tends to rise, and there is a possibility that hot spots may occur on the ceramic plate.
  • the present invention has been made to solve such a problem, and an object of the present invention is to surely prevent hot spots from being generated on a ceramic plate in a member for a semiconductor manufacturing apparatus provided with a plurality of RF rods. To do.
  • the member for a semiconductor manufacturing apparatus of the present invention A member for a semiconductor manufacturing apparatus having a structure in which a hollow ceramic shaft is provided on the back surface of a ceramic plate whose front surface is a wafer mounting surface.
  • the RF link member has a branch portion composed of a plurality of RF rods, and the branch portion extends to the outside of the ceramic shaft. It is a thing.
  • the RF link member has a branch portion composed of a plurality of RF rods.
  • the surface area of the current flow path of the RF link member is increased, so that the increase in resistance due to the skin effect can be suppressed.
  • the amount of heat generated per RF rod decreases.
  • the RF connector is located outside the hollow interior of the ceramic shaft. As a result, even if the RF connector generates heat, the temperature inside the hollow of the ceramic shaft does not rise. Therefore, the temperature of the RF rod arranged inside the hollow of the ceramic shaft does not easily rise. Therefore, according to the member for the semiconductor manufacturing apparatus of the present invention, it is possible to reliably prevent the occurrence of hot spots on the ceramic plate.
  • the plurality of RF rods may be grouped together at a first aggregation portion in front of the back surface of the ceramic plate and connected to the RF electrode. In this way, when connecting the RF link member to the RF electrode, the number of holes provided in the ceramic plate can be reduced.
  • the plurality of RF rods may be individually connected to the RF electrodes. In this way, even if one of the plurality of RF rods is disconnected from the RF electrode for some reason, power can be supplied to the RF electrode from the other RF rod.
  • the RF electrode may be provided inside the ceramic plate over a plurality of surfaces having different heights. In this way, the density of plasma can be changed for each surface having different heights of the RF electrode.
  • the plurality of RF rods may be individually connected to each surface of the RF electrode. In this way, the distance between the RF rods can be secured. For example, by increasing the distance between the RF rods that generate heat, it is possible to prevent the RF rods from heating each other.
  • the RF rod is connected to each of the RF electrode near the back surface of the ceramic plate and the RF electrode far from the back surface of the ceramic plate, the depth of the hole of the RF rod connected to the RF electrode near the back surface of the ceramic plate is increased. The shallowness reduces the processing load on the ceramic plate and reduces the risk of breakage.
  • the depth of the holes of the plurality of RF rods becomes deep, and the processing load of the ceramic plate becomes large and the ceramic plate is damaged. The risk increases.
  • the plurality of RF rods may be grouped together at a second aggregation portion in front of the RF connector and connected to the RF connector. In this way, when the RF link member is connected to the RF connector, the number of connection points between the RF link member and the RF connector can be reduced.
  • the cross section when the RF rod is cut in the direction perpendicular to the longitudinal direction may have a shape having at least one recess on the outer peripheral portion.
  • the member for a semiconductor manufacturing apparatus of the present invention includes a resistance heating element embedded in the ceramic plate and a pair of resistance heating elements connected to the resistance heating element and provided through the hollow inside of the ceramic shaft to the outside of the ceramic shaft.
  • a heater rod may be provided, and the base end of the RF link member may be located closer to the ceramic shaft than the base end of the heater rod.
  • the member for a semiconductor manufacturing apparatus of the present invention includes a resistance heating element embedded in the ceramic plate and a pair of resistance heating elements connected to the resistance heating element and provided through the hollow inside of the ceramic shaft to the outside of the ceramic shaft.
  • a heater rod may be provided, and the RF rod is preferably thicker than the heater rod. That is, the diameter of the RF rod is preferably larger than the diameter of the heater rod. By doing so, the surface area of the RF rod becomes large, so that the resistance of the RF current flowing through the RF rod becomes low. Therefore, the amount of heat generated per RF rod is further reduced.
  • the semiconductor manufacturing apparatus member includes the first aggregation portion
  • the diameter of the first aggregation portion is preferably larger than the diameter of the heater rod.
  • the diameter of the second aggregation portion is preferably larger than the diameter of the heater rod.
  • FIG. 5 is a cross-sectional view of a modified example of the RF rod 42.
  • FIG. 1 is a vertical cross-sectional view of the ceramic heater 10.
  • the ceramic heater 10 is one of the members for semiconductor manufacturing equipment.
  • the ceramic heater 10 is used to support and heat a wafer to be subjected to a process such as CVD or etching using plasma, and is mounted inside a chamber for a semiconductor process (not shown).
  • the ceramic heater 10 includes a ceramic plate 12, a ceramic shaft 20, a heater rod 24, an RF connector 30, and an RF link member 40.
  • the ceramic plate 12 is a disk-shaped member containing AlN as a main component.
  • the ceramic plate 12 includes a wafer mounting surface 12a on which a wafer can be mounted.
  • the ceramic shaft 20 is joined to the surface (back surface) 12b of the ceramic plate 12 opposite to the wafer mounting surface 12a.
  • a resistance heating element 14 and an RF electrode 16 are embedded in the ceramic plate 12.
  • the resistance heating element 14 is obtained by wiring a coil containing Mo as a main component over the entire surface of the ceramic plate 12 so as to be substantially parallel to the wafer mounting surface 12a in a one-stroke manner.
  • the RF electrode 16 is a disk-shaped thin-layer electrode having a diameter slightly smaller than that of the ceramic plate 12, and is formed of a mesh in which a thin metal wire containing Mo as a main component is woven into a mesh to form a sheet.
  • the RF electrode 16 is embedded between the resistance heating element 14 and the wafer mounting surface 12a of the ceramic plate 12 so as to be substantially parallel to the wafer mounting surface 12a.
  • the material of the resistance heating element 14 and the RF electrode 16 is Mo because the coefficient of thermal expansion is close to that of AlN, which is the main component of the ceramic plate 12, and cracks are unlikely to occur during the production of the ceramic plate 12.
  • thermocouple (not shown) for detecting the temperature of the ceramic plate 12 is inserted in a region of the back surface 12b of the ceramic plate 12 surrounded by the ceramic shaft 20.
  • the ceramic shaft 20 is a cylindrical member containing AlN as a main component, and has a first flange 20a around the upper opening and a second flange 20b around the lower opening.
  • the end face of the first flange 20a is joined to the back surface 12b of the ceramic plate 12 by a solid phase joining method.
  • the end face of the second flange 20b is fixed to a chamber (not shown).
  • the heater rod 24 is a rod having a circular cross section made of a metal such as Mo.
  • the upper end of one of the pair of heater rods 24 is joined to one end of the resistance heating element 14, and the upper end of the other heater rod 24 is joined to the other end of the resistance heating element 14.
  • the lower ends of the pair of heater rods 24 are exposed to the outside of the hollow inner 22 of the ceramic shaft 20 and are connected to the heater power supply 28 via a cable 26.
  • the heater power supply 28 is an AC power supply in this embodiment, but a DC power supply may be adopted.
  • the RF connector 30 is arranged on the outside (lower side) of the hollow inner 22 of the ceramic shaft 20.
  • the RF connector 30 includes a socket 32 and an RF base rod 36.
  • the socket 32 is a substantially rectangular parallelepiped or substantially cylindrical member made of a conductive metal such as Ni.
  • On the upper surface of the socket 32 two insertion holes 34 for inserting the RF rod 42 of the RF link member 40 are provided.
  • the insertion hole 34 holds the inserted RF rod 42.
  • the RF base rod 36 is a rod made of a conductive metal such as Ni, and is integrated with the lower surface of the socket 32.
  • the RF base rod 36 is connected to the RF power supply 38 via a cable 37.
  • the RF link member 40 has a branch portion 44 composed of a plurality of (two in this case) RF rods 42.
  • the RF rod 42 is a rod having a circular cross section made of a conductive metal such as Ni.
  • the upper ends of the plurality of RF rods 42 are connected to the RF electrodes 16 through holes 13 provided in the back surface 12b of the ceramic plate 12 while being branched. Further, the lower ends of the plurality of RF rods 42 are inserted into the insertion holes 34 of the RF connector 30 while being branched.
  • the RF link member 40 is a branch portion 44, and reaches the RF connector 30 from the RF electrode 16 via the hollow inner 22 of the ceramic shaft 20.
  • a part of the branch portion 44 is arranged in the hollow inner 22 of the ceramic shaft 20.
  • the RF link member 40 is connected to the RF power supply 38 via the RF connector 30 and the cable 37.
  • the lower end of the RF rod 42 is closer to the ceramic shaft 20 than the lower end of the heater rod 24.
  • No heater rod 24 is arranged between the RF rods 42.
  • the distance between the RF rods 42 is equal to or larger than the diameter of the RF rods 42.
  • a ceramic heater 10 is arranged in a chamber (not shown), and a wafer is placed on the wafer mounting surface 12a. Then, the wafer is heated by applying the voltage of the heater power supply 28 to the resistance heating element 14 via the cable 26 and the heater rod 24. Specifically, the temperature of the wafer is obtained based on a thermocouple detection signal (not shown), and the voltage applied to the resistance heating element 14 is controlled so that the temperature becomes a set temperature (for example, 350 ° C. or 300 ° C.).
  • an opposed horizontal electrode and a ceramic plate 12 installed above in the chamber are applied.
  • a plasma is generated between the parallel plate electrodes composed of the RF electrodes 16 embedded in the wafer, and the plasma is used to perform CVD film formation or etching on the wafer. If a DC voltage is applied to the RF electrode 16, it can be used as an electrostatic electrode (ESC electrode).
  • ESC electrode electrostatic electrode
  • the RF link member 40 has a branch portion 44 composed of a plurality of RF rods 42.
  • the surface area of the current flow path of the RF link member 40 increases, so that an increase in resistance due to the skin effect can be suppressed. Further, since the current flowing per RF rod becomes small, the amount of heat generated per RF rod decreases.
  • the RF connector 30 is arranged outside the hollow inner 22 of the ceramic shaft 20. As a result, even if the RF connector 30 generates heat, the temperature of the hollow inside 22 of the ceramic shaft 20 does not increase. Therefore, the temperature of the RF rod 42 arranged in the hollow inner portion 22 of the ceramic shaft 20 does not easily rise.
  • the ceramic heater 10 it is possible to reliably prevent hot spots from being generated on the ceramic plate 12. Further, since the RF connector 30 is arranged outside the hollow inner 22 of the ceramic shaft 20, the connection work between the RF link member 40 and the RF connector 30 can be smoothly performed.
  • the plurality of RF rods 42 are individually connected to the RF electrode 16, even if one of the plurality of RF rods 42 is disconnected from the RF electrode 16 for some reason, RF from the other RF rods 42. Power can be supplied to the electrode 16. Further, since the plurality of RF rods 42 are connected to the RF electrodes 16, the amount of heat generated can be suppressed without increasing the resistance due to the skin effect.
  • the base end (lower end) of the RF link member 40 is closer to the ceramic shaft 20 than the base end (lower end) of the heater rod 24.
  • the work performed on the base end of the RF link member 40 and the work performed on the base end of the heater rod 24 are unlikely to interfere with each other, so that each work can be performed smoothly.
  • the length of the RF link member 40 can be made relatively short, the resistance of the RF link member 40 can be suppressed low, and the amount of heat generated by the RF link member 40 can be suppressed low.
  • the heater rod 24 does not have a skin effect because a high frequency current does not flow and has a lower resistance than the RF rod 42, the amount of heat generated by the heater rod 24 hardly increases even if it is lengthened.
  • the voltage applied to the heater rod 24 is applied to the RF rod 42 by not arranging the heater rod 24 between the RF rods 42. There is less risk of fluctuation due to the influence of high frequency voltage.
  • the distance between the RF rods 42 is equal to or larger than the diameter of the RF rods 42, and the plurality of RF rods 42 are arranged with a sufficient distance, so that one RF rod 42 generates heat from the other RF rods 42. Less likely to be affected.
  • the RF rod 42 is thicker than the heater rod 24 (the diameter of the RF rod 42 is larger than the diameter of the heater rod 24). By doing so, the surface area of the RF rod 42 becomes large, so that the resistance of the RF current flowing through the RF rod 42 becomes low. Therefore, the amount of heat generated per RF rod is further reduced.
  • the RF link member 140 is a columnar shape in which a branch portion 144 composed of a plurality of (two in this case) RF rods 142 and a plurality of RF rods 142 are grouped together in front of the back surface 12b of the ceramic plate 12. It is provided with an aggregation unit 145. The lower end of the RF rod 142 is inserted into the insertion hole 34 of the RF connector 30 while being branched.
  • the upper end of the RF rod 142 is aggregated into one rod by the aggregation portion 145 and connected to the RF electrode 16.
  • the RF link member 140 reaches the RF connector 30 from the RF electrode 16 via the hollow inner 22 of the ceramic shaft 20.
  • a part of the branch portion 144 is arranged in the hollow inner 22 of the ceramic shaft 20.
  • the lower end of the RF link member 140 is located closer to the ceramic shaft 20 than the lower end of the heater rod 24 (see FIG. 1).
  • FIG. 2 since most of the RF link member 140 is composed of a plurality of RF rods 142, heat generation can be suppressed. Further, when the RF link member 140 is connected to the RF electrode 16, the number of holes 13 provided in the ceramic plate 12 can be reduced.
  • the RF rod 142 and the aggregation portion 145 are preferably thicker than the heater rod 24. By doing so, since the surface area of the RF rod 142 and the aggregation portion 145 is increased, the resistance of the RF current flowing through the RF rod 142 and the aggregation portion 145 is lowered, and the amount of heat generated by them is reduced.
  • the RF link member 240 has a columnar shape in which a branch portion 244 composed of a plurality of (two in this case) RF rods 242 and a plurality of RF rods 242 are combined into one in front of the back surface 12b of the ceramic plate 12. It includes a first aggregation unit 245 and a columnar second aggregation unit 246 in which a plurality of RF rods 242 are combined into one in front of the RF connector 30.
  • the upper end of the RF rod 242 is aggregated into one rod by the first aggregation portion 245 and connected to the RF electrode 16.
  • the lower end of the RF rod 242 is aggregated into one rod by the second aggregation portion 246 and inserted into the insertion hole 34 of the RF connector 30.
  • the RF link member 240 reaches the RF connector 30 from the RF electrode 16 via the hollow inner 22 of the ceramic shaft 20.
  • a part of the branch portion 244 is arranged in the hollow inner 22 of the ceramic shaft 20.
  • the lower end of the RF link member 240 is located closer to the ceramic shaft 20 than the lower end of the heater rod 24 (see FIG. 1). In FIG.
  • a plurality of RF link members 240 may be provided between the RF electrode 16 and the RF connector 30.
  • the RF rod 242 and the first and second collecting portions 245 and 246 are preferably thicker than the heater rod 24.
  • the surface area of the RF rod 242 and the first and second aggregation portions 245 and 246 becomes large, so that the resistance of the RF current flowing through the RF rod 242 and the first and second aggregation portions 245 and 246 becomes low, and these The amount of heat generated is reduced.
  • the RF link member 340 of FIG. 4 may be adopted.
  • the RF link member 340 includes a branch portion 344 composed of a plurality of (here, two) RF rods 342, and an aggregation portion 346 in which a plurality of RF rods 342 are combined into one in front of the RF connector 30. ing.
  • the upper end of the RF rod 342 is connected to the RF electrode 16 while being branched.
  • the lower end of the RF rod 342 is aggregated into one rod by the aggregation portion 346 and inserted into the insertion hole 34 of the RF connector 30.
  • the RF link member 340 reaches the RF connector 30 from the RF electrode 16 via the hollow inner 22 of the ceramic shaft 20.
  • a part of the branch portion 344 is arranged in the hollow inner 22 of the ceramic shaft 20.
  • the lower end of the RF link member 340 is located closer to the ceramic shaft 20 than the lower end of the heater rod 24 (see FIG. 1). In FIG. 4, when the RF link member 340 is connected to the RF connector 30, the number of connection points (insertion holes 34) can be reduced as compared with the above-described embodiment.
  • a plurality of RF link members 340 may be provided between the RF electrode 16 and the RF connector 30.
  • the RF rod 342 and the aggregation portion 346 are preferably thicker than the heater rod 24. By doing so, since the surface area of the RF rod 342 and the aggregation portion 346 becomes large, the resistance of the RF current flowing through the RF rod 342 and the aggregation portion 346 becomes low, and the amount of heat generated by them becomes small.
  • the cross section of the RF rod 42 (the cross section when cut in the direction perpendicular to the longitudinal direction) is circular, but as shown in FIG. 5, at least one is formed on the outer peripheral portion of the cross section of the RF rod 42.
  • the shape may have one (here, five) recesses 42a.
  • the RF rod 42 may include at least one groove (here, five) extending along the longitudinal direction.
  • the shape of the RF electrode 16 is a mesh, but other shapes may be used. For example, it may be coiled or flat, or it may be punched metal.
  • AlN is used as the ceramic material, but the present invention is not particularly limited, and for example, alumina, silicon nitride, silicon carbide, or the like may be used. In that case, it is preferable to use a material of the resistance heating element 14 and the RF electrode 16 having a coefficient of thermal expansion close to that of the ceramic.
  • the resistance heating element 14 and the RF electrode 16 are embedded in the ceramic plate 12, but an electrostatic electrode may be further embedded. In this way, the ceramic heater 10 also functions as an electrostatic chuck.
  • a one-zone heater in which the resistance heating element 14 is wired over the entire surface of the ceramic plate 12 in a one-stroke manner is illustrated, but the present invention is not particularly limited to this.
  • a multi-zone heater may be adopted in which the entire surface of the ceramic plate 12 is divided into a plurality of zones and the resistance heating element is wired for each zone in a single stroke manner.
  • a pair of heater rods may be provided for each resistance heating element in each zone.
  • the RF electrode 416 of FIG. 6 may be adopted instead of the RF electrode 16 of the above-described embodiment.
  • the RF electrode 416 is formed by connecting the outer peripheral edge of the inner circular electrode 416a and the inner peripheral edge of the outer annular electrode 416b with a cylindrical connecting portion 416c.
  • the inner circular electrode 416a and the outer ring electrode 416b are arranged on surfaces having different heights in two upper and lower stages.
  • One of the two RF rods 42 constituting the RF link member 40 (branch portion 44) is connected to the back surface of the inner circular electrode 416a, and the other is connected to the back surface of the outer ring electrode 416b.
  • the two RF rods 42 are connected to the faces of the RF electrodes 416 having different heights. Even in this way, the same effect as that of the above-described embodiment can be obtained. Further, since the RF electrode 416 is provided inside the ceramic plate 12 over a plurality of surfaces having different heights, the plasma density can be changed for each surface having different heights of the RF electrode 416. Further, since the two RF rods 42 are individually connected to each surface of the RF electrode 416, the distance between the two RF rods 42 can be secured. For example, by increasing the distance between the two RF rods 42 that generate heat, it is possible to prevent the RF rods 42 from heating each other.
  • the RF rod 42 is connected to each of the outer ring electrode 416b near the back surface 12b and the inner ring electrode 416a far from the back surface 12b of the ceramic plate 12, it is connected to the outer ring electrode 416b near the back surface 12b.
  • the depth of the hole of the RF rod 42 becomes shallow, the processing load of the ceramic plate 12 becomes small, and the risk of breakage can be suppressed.
  • the two RF rods 42 are connected to the inner annular electrode 416a far from the back surface 12b, the depth of the holes of the two RF rods 42 becomes deeper, and the processing load of the ceramic plate 12 becomes deeper. Increases and the risk of damage increases.
  • the resistance heating element 14 and the heater rod 24 similar to those in the above-described embodiment may be provided.
  • the RF link member 340 of FIG. 4 may be adopted instead of the RF link member 40.
  • the present invention can be used as a member used in a semiconductor manufacturing apparatus such as an etching apparatus or a CVD apparatus.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Cet élément pour un dispositif de fabrication de semi-conducteurs a une structure dans laquelle un arbre en céramique creux est disposé sur la surface arrière d'une plaque en céramique ayant une surface de montage de tranche sur la surface avant. Cet élément pour le dispositif de fabrication de semi-conducteurs est pourvu d'une électrode RF enterrée à l'intérieur de la plaque en céramique, d'un connecteur RF disposé sur l'extérieur de l'intérieur creux de l'arbre en céramique, et d'un élément de liaison RF disposé entre le connecteur RF et l'électrode RF. L'élément de liaison RF a une section de ramification constituée d'une pluralité de tiges RF, et les parties de ramification continuent vers l'extérieur de l'arbre en céramique.
PCT/JP2020/028876 2019-08-08 2020-07-28 Élément pour dispositif de fabrication de semi-conducteurs WO2021024858A1 (fr)

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KR1020227000620A KR20220019030A (ko) 2019-08-08 2020-07-28 반도체 제조 장치용 부재
CN202080056190.2A CN114245936A (zh) 2019-08-08 2020-07-28 半导体制造装置用构件
JP2021537246A JP7331107B2 (ja) 2019-08-08 2020-07-28 半導体製造装置用部材
US17/644,361 US11996313B2 (en) 2019-08-08 2021-12-15 Member for semiconductor manufacturing apparatus

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JP2019146413 2019-08-08

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220238316A1 (en) * 2020-12-31 2022-07-28 Mico Ceramics Ltd. Ceramic susceptor

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005197391A (ja) * 2004-01-06 2005-07-21 Ibiden Co Ltd プラズマ発生装置用電極埋設部材
JP2009054871A (ja) * 2007-08-28 2009-03-12 Tokyo Electron Ltd 載置台構造及び処理装置
JP2010109316A (ja) * 2008-03-11 2010-05-13 Tokyo Electron Ltd 載置台構造及び処理装置
JP2015159283A (ja) * 2014-02-21 2015-09-03 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ プラズマ処理用の調整可能なｒｆ給電構造
JP2016184642A (ja) * 2015-03-26 2016-10-20 日本碍子株式会社 半導体製造装置用部材
JP2017511980A (ja) * 2014-01-07 2017-04-27 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 広範囲の動作温度を有するｐｅｃｖｄセラミックヒータ
JP2018506853A (ja) * 2015-02-03 2018-03-08 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ プラズマ処理システム用の高温チャック
JP2018123348A (ja) * 2017-01-30 2018-08-09 日本碍子株式会社 ウエハ支持台
WO2018163935A1 (fr) * 2017-03-06 2018-09-13 日本碍子株式会社 Embase de soutien de tranche

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5896595B2 (ja) 2010-10-20 2016-03-30 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ ２層ｒｆ構造のウエハ保持体
US8946058B2 (en) * 2011-03-14 2015-02-03 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
JP5807032B2 (ja) 2012-03-21 2015-11-10 日本碍子株式会社 加熱装置及び半導体製造装置
JP2017505382A (ja) 2014-01-24 2017-02-16 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 酸化剤を用いないケイ素及び酸素含有膜の堆積
US11532497B2 (en) * 2016-06-07 2022-12-20 Applied Materials, Inc. High power electrostatic chuck design with radio frequency coupling
US10147610B1 (en) * 2017-05-30 2018-12-04 Lam Research Corporation Substrate pedestal module including metallized ceramic tubes for RF and gas delivery
KR20210018517A (ko) * 2018-07-07 2021-02-17 어플라이드 머티어리얼스, 인코포레이티드 고 rf 전력 프로세스를 위한 반도체 처리 장치

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005197391A (ja) * 2004-01-06 2005-07-21 Ibiden Co Ltd プラズマ発生装置用電極埋設部材
JP2009054871A (ja) * 2007-08-28 2009-03-12 Tokyo Electron Ltd 載置台構造及び処理装置
JP2010109316A (ja) * 2008-03-11 2010-05-13 Tokyo Electron Ltd 載置台構造及び処理装置
JP2017511980A (ja) * 2014-01-07 2017-04-27 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 広範囲の動作温度を有するｐｅｃｖｄセラミックヒータ
JP2015159283A (ja) * 2014-02-21 2015-09-03 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ プラズマ処理用の調整可能なｒｆ給電構造
JP2018506853A (ja) * 2015-02-03 2018-03-08 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ プラズマ処理システム用の高温チャック
JP2016184642A (ja) * 2015-03-26 2016-10-20 日本碍子株式会社 半導体製造装置用部材
JP2018123348A (ja) * 2017-01-30 2018-08-09 日本碍子株式会社 ウエハ支持台
WO2018163935A1 (fr) * 2017-03-06 2018-09-13 日本碍子株式会社 Embase de soutien de tranche

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220238316A1 (en) * 2020-12-31 2022-07-28 Mico Ceramics Ltd. Ceramic susceptor

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JPWO2021024858A1 (fr) 2021-02-11
JP7331107B2 (ja) 2023-08-22
TW202111820A (zh) 2021-03-16
US11996313B2 (en) 2024-05-28
US20220108909A1 (en) 2022-04-07
TWI745006B (zh) 2021-11-01
CN114245936A (zh) 2022-03-25
KR20220019030A (ko) 2022-02-15

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