WO2021012344A1 - 一种TFT驱动背板及Micro-LED显示器 - Google Patents

一种TFT驱动背板及Micro-LED显示器 Download PDF

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WO2021012344A1
WO2021012344A1 PCT/CN2019/101987 CN2019101987W WO2021012344A1 WO 2021012344 A1 WO2021012344 A1 WO 2021012344A1 CN 2019101987 W CN2019101987 W CN 2019101987W WO 2021012344 A1 WO2021012344 A1 WO 2021012344A1
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layer
source
drain
metal
active layer
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PCT/CN2019/101987
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English (en)
French (fr)
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李恭檀
徐铉植
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深圳市华星光电半导体显示技术有限公司
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Priority to US16/616,982 priority Critical patent/US11437411B2/en
Publication of WO2021012344A1 publication Critical patent/WO2021012344A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H01L29/78693—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes

Definitions

  • This application relates to the field of display technology, and in particular to a TFT drive backplane for Micro-LED display and a Micro-LED display.
  • Micro-LED technology that is, LED miniaturization and matrix technology, refers to a high-density and small-size LED array integrated on a chip. For example, each pixel of an LED display can be addressed and individually driven to light up. The millimeter level is reduced to the micron level. An important application area of Micro-LED is the display of super large size.
  • the driving backplane used by Micro-LEDs is Top Gate LTPS TFT.
  • low-temperature polycrystalline silicon thin-film transistors LTPS
  • the mother glass size is small, and the production capacity is likely to encounter bottlenecks in the application of ultra-large size.
  • the oxide thin film transistor technology can be produced in the big generation line (11 generation line, 3.37 meters ⁇ 2.94 meters). Therefore, the oxide thin film transistor technology has advantages in the application of large-size Micro-LEDs.
  • Micro-LED displays have higher requirements for the mobility of the thin film transistors driving the backplane, and the field effect mobility is required to be greater than 30 cm 2 /Vs.
  • the mobility of oxide thin film transistors based on IGZO Indium Gallium Zinc Oxide is generally 10 cm 2 /Vs, which is difficult to meet the requirements of Micro-LED display.
  • splicing technology is often used in large-size Micro-LED applications.
  • the edge area of the conventional panel is the area where the traces and the driver chip are connected, usually 3-50mm. Therefore, the borders during splicing will form black lines, which will affect the display effect.
  • the purpose of this application is to provide a TFT drive backplane and a Micro-LED display in view of the problems existing in the prior art, which can meet the needs of large-size Micro-LED displays, and can solve the low mobility of existing oxide semiconductor materials. , It is difficult to meet the problem of Micro-LED display requirements, and can reduce the frame during splicing and reduce the process steps when preparing the thin film transistor driving backplane.
  • the present application provides a TFT drive backplane
  • the TFT drive backplane includes a base substrate; an active layer is arranged above the base substrate, and the active layer adopts a mobility greater than The oxide semiconductor material of 30 cm 2 /Vs or more is prepared by magnetron sputtering; a back metal layer is provided under the base substrate, and the back metal layer includes a metal light barrier layer and a connecting drive A metal wiring layer of the chip, the metal light blocking layer is disposed opposite to the active layer, wherein the length of the metal light blocking layer is greater than the length of the channel region of the active layer, and the metal light blocking layer The width of the barrier layer is greater than the width of the channel region of the active layer, and the channel region of the active layer is aligned with the center of the metal light barrier layer.
  • the present application also provides a TFT drive backplane
  • the TFT drive backplane includes a base substrate; an active layer is arranged above the base substrate, and the active layer adopts mobility Preparation of an oxide semiconductor material greater than or equal to 30 cm 2 /Vs; a back metal layer is provided under the base substrate, and the back metal layer includes a metal light barrier layer and a metal wiring layer for connecting the driver chip , The metal light blocking layer is arranged relative to the active layer.
  • the present application also provides a Micro-LED display
  • the Micro-LED display includes a TFT drive backplane
  • the TFT drive backplane includes a base substrate;
  • There is an active layer the active layer is made of an oxide semiconductor material with a mobility greater than or equal to 30 cm 2 /Vs, and is prepared by magnetron sputtering;
  • a back metal layer is provided under the base substrate, and
  • the back metal layer includes a metal light blocking layer and a metal wiring layer for connecting the driving chip, and the metal light blocking layer is disposed relative to the active layer.
  • a high-mobility oxide thin film transistor driving backplane structure can be used to meet the needs of large-size Micro-LED displays; the back metal layer is prepared under the base substrate, and the back metal layer includes metal for connecting the driving chip.
  • the wiring layer and the metal light blocking layer used to block ambient light reduce the frame during panel splicing in large-size Micro-LED applications, and can save the original metal light-shielding layer when preparing thin film transistors.
  • the patterning step reduces the process steps when preparing the TFT driving backplane and saves the preparation cost.
  • FIG. 1 is a schematic diagram of the layered structure of the first embodiment of the TFT driving backplane of the present application
  • FIG. 3 is a schematic diagram of the layered structure of the second embodiment of the TFT driving backplane of the present application.
  • the "on” or “under” of the first feature of the second feature may include the first and second features in direct contact, or may include the first and second features Not in direct contact but through other features between them.
  • “above”, “above” and “above” the second feature of the first feature include the first feature being directly above and obliquely above the second feature, or it simply means that the level of the first feature is higher than the second feature.
  • the “below”, “below” and “below” the first feature of the second feature include the first feature directly below and obliquely below the second feature, or it simply means that the level of the first feature is smaller than the second feature.
  • the TFT driver backplane includes a base substrate; an active layer is provided above the base substrate, and the The source layer is made of an oxide semiconductor material with a mobility greater than or equal to 30 cm 2 /Vs; a back metal layer is prepared under the base substrate, and the back metal layer includes a metal light barrier layer (Metal Light Shield Layer), The metal light blocking layer is disposed relative to the active layer.
  • the TFT driver backplane includes a base substrate; an active layer is provided above the base substrate, and the The source layer is made of an oxide semiconductor material with a mobility greater than or equal to 30 cm 2 /Vs; a back metal layer is prepared under the base substrate, and the back metal layer includes a metal light barrier layer (Metal Light Shield Layer), The metal light blocking layer is disposed relative to the active layer.
  • Metal Light Shield Layer Metal Light Shield Layer
  • Using the TFT driver backplane of the present application can realize a high mobility oxide thin film transistor driver backplane structure that meets the needs of large-size Micro-LED displays, and can solve the problem of low mobility of existing oxide semiconductor materials, which is difficult to meet Micro-LED displays.
  • the question of demand is made on the backside of the driving backplane relative to the active layer area of the thin film transistor.
  • a metal light blocking layer is made of light-shielding metal for blocking ambient light.
  • the metal light-blocking layer can play the same role as the metal light-shielding layer (Shield Metal Layer) in the existing thin-film transistors. Therefore, the metal light-shielding layer is no longer needed in the thin film transistor of the driving backplane of this application. Therefore, the present application can save the original metal light-shielding layer deposition and patterning steps when preparing the thin film transistor, thereby reducing the process steps when preparing the TFT driving backplane, and saving the preparation cost.
  • the back metal layer further includes a metal wiring layer for connecting the driving chip, so that the driving chip can be placed on the back of the driving backplane to compress the panel frame. That is, in order to reduce the frame during panel splicing in large-size Micro-LED applications, the TFT driver backplane of the present application prepares metal wiring layers on the sides and the back, so that the driver chip can be placed on the back of the driver backplane, and then The frame during splicing can be reduced and the preparation cost can be saved.
  • FIG. 1 is a schematic diagram of the layered structure of the first embodiment of the TFT driving backplane of this application
  • FIG. 2 is the IV curve of an oxide thin film transistor.
  • the TFT drive backplane of the present application includes: a base substrate 101, an active layer (Act) 102 provided on the base substrate 101, and an active layer (Act) 102 provided on the active layer 102
  • a third passivation layer (VIA3) 113 is provided on the second passivation
  • the active layer 102 includes a channel region 1022 corresponding to the gate 104, and source/drain contact regions 1021 located on both sides of the channel region 1022;
  • the first source The/drain metal layer 106 includes a source/drain 1061, a first through hole 1051 is provided between the source/drain contact region 1021 and the source/drain 1061, and the source/drain 1061 passes through the The first through hole 1051 is in contact with the source/drain contact region 1021.
  • the second source/drain metal layer 108 includes an electrode connection line 1081 and a first driving power line 1082. The electrode connection line 1081 and the first driving power line 1082 are respectively separated from the source/drain 1061.
  • a second through hole 1071 is provided, and the source/drain 161 are respectively connected to the electrode connecting line 1081 and the first driving power line 1082 through the corresponding second through hole 1071.
  • the active layer 102, the gate 1041, the source/drain 1081 constitute a thin film transistor of the TFT driving backplane.
  • the third source/drain metal layer 111 includes a patterned anode (Anode) 1110 and a second driving power line 1111; a third through hole 1091 is provided between the anode 1110 and the electrode connecting line 1081, so The anode 1110 is connected to the electrode connecting line 1081 through the third through hole 1091.
  • the first driving power line 1082 is used to provide a voltage driving signal (VDD)
  • the second driving power line 1111 is used to provide a power switch signal (VSS).
  • the first transparent conductive layer 112 serves as a pixel electrode.
  • the TFT driving backplane adopts three source/drain metal layers. It should be noted that the use of a single source/drain metal layer or two or more multi-layer source/drain metal layers can adopt the improved structure of the TFT drive backplane described in this application, that is, the active layer adopts migration An oxide semiconductor material with a rate greater than or equal to 30 cm 2 /Vs is prepared, and a metal light blocking layer is arranged on the back of the backplane relative to the active layer.
  • the base substrate 101 may be a glass substrate or a flexible substrate prepared using a high molecular polymer, and the high molecular polymer may be polyimide (PI).
  • PI polyimide
  • the active layer 102 is made of an oxide semiconductor material with a mobility greater than or equal to 30 cm 2 /Vs, and is prepared by magnetron sputtering.
  • the oxide semiconductor material may be an oxide semiconductor material containing indium (In) and tin (Sn) and having a mobility greater than or equal to 30 cm 2 /Vs; it may also be containing gallium (Ga) and tin (Sn), and An oxide semiconductor material with a mobility greater than or equal to 30 cm 2 /Vs; it may also be an oxide semiconductor material containing indium (In), fluorine (F), and oxygen (O) and a mobility greater than or equal to 30 cm 2 /Vs.
  • the abscissa is the gate voltage V G (unit is volt (V)), and the ordinate is the source/drain current I DS (unit is ampere (A)).
  • the two curves in the figure are respectively for illustration Different mobility ⁇ FE (unit is cm2/(volt ⁇ sec), namely cm2/V s).
  • ⁇ FE unit is cm2/(volt ⁇ sec), namely cm2/V s.
  • cm2/(volt ⁇ sec) the higher the mobility, the faster the operating speed of the thin film transistor device, and the higher the cut-off frequency. Therefore, in this application, an oxide semiconductor material with a mobility greater than or equal to 30 cm 2 /Vs is used to prepare the active layer, so that the TFT driver backplane of this application can face Micro-LED display applications and meet the needs of large-size Micro-LED displays.
  • the first passivation layer (VIA1) 107, the second passivation layer (VIA2) 109, and the third passivation layer (VIA3) 113 can be made of the same material.
  • a back metal layer is prepared under the base substrate 101, and the back metal layer includes: a metal light barrier layer (Metal Light Blocking Layer) disposed opposite to the channel region 1022 of the active layer 102.
  • Shield Layer) 121 which is disposed under the metal light blocking layer 121 and covers the metal light blocking layer 121 and a back insulating layer 122 on the back of the base substrate 101, and is disposed under a back insulating layer 122
  • the metal wiring layer 123 That is, the metal light-shielding structure is prepared on the back side while preparing the back metal wiring layer, so that the original metal light-shielding layer deposition and patterning steps can be saved when the thin film transistor is prepared.
  • the back insulating layer 122 is etched to form a through hole exposing part of the metal light blocking layer 121, and the metal wiring layer 123 is in contact with the metal light blocking layer 121 through the through hole.
  • the material of the metal light blocking layer 121 is a metal having a light blocking effect, such as a composite layer composed of IZO and CuCa, or other metal materials having a light blocking effect.
  • the length and width of the metal light blocking layer 121 are greater than the length and width of the channel region 1022 of the active layer 102; and the channel region 1022 of the active layer 102 and the metal light blocking layer The centers of the two layers 121 are aligned, thereby effectively blocking ambient light, so as to shield the active layer 102 from light.
  • the back insulating layer 122 may be a silicon oxide (SiOx) layer, or a silicon nitride (SiNx) layer, or a silicon oxynitride (SiOxNy) layer.
  • the metal traces of the metal trace layer 123 are used to connect the driver chip, so that the driver chip can be placed on the back of the driver backplane to compress the panel frame.
  • the metal wiring layer 123 is made of transparent conductive material (ITO).
  • the TFT driving backplane of the application adopts a high-mobility oxide thin film transistor driving backplane structure, which can meet the needs of large-size Micro-LED display;
  • the back metal layer is prepared under the base substrate, and the back metal layer includes
  • the metal wiring layer of the driver chip and the metal light blocking layer used to block the ambient light reduce the frame during panel splicing in large-size Micro-LED applications, and save the original metal shading when fabricating thin film transistors
  • the layer deposition and patterning steps reduce the process steps when preparing the TFT driving backplane and save the preparation cost.
  • FIG. 3 is a schematic diagram of the layered structure of the second embodiment of the TFT driving backplane of the present application.
  • a buffer layer 301 is further provided between the base substrate 101 and the active layer 102.
  • the buffer layer 301 may be a silicon oxide (SiOx) layer or a silicon nitride (SiNx) layer, or a composite layer composed of a silicon oxide layer and a silicon nitride layer.
  • the present application also provides a Micro-LED display.
  • the Micro-LED display includes a TFT drive backplane, and the TFT drive backplane adopts the TFT drive backplane described in the present application.
  • the Micro-LED display of this application adopts a high-mobility oxide thin-film transistor drive backplane structure, which can meet the needs of large-size Micro-LED display; the back metal layer is prepared under the base substrate, and the back metal layer includes the connection driver
  • the metal wiring layer of the chip and the metal light blocking layer used to block ambient light reduce the frame of panel splicing in large-size Micro-LED applications, and save the original metal shading layer when preparing thin film transistors
  • the deposition and patterning steps of TFT reduce the process steps when preparing the TFT driving backplane, and save the preparation cost.
  • the subject of this application can be manufactured and used in industry and has industrial applicability.

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Abstract

本申请揭露一种TFT驱动背板及Micro-LED显示器，通过采用高迁移率氧化物薄膜晶体管驱动背板结构，可以实现满足大尺寸Micro-LED显示需求；采用在衬底基板的下方制备背面金属层，背面金属层包括用于连接驱动芯片的金属走线层，以及用于阻挡环境光的金属光阻挡层，减少了大尺寸的Micro-LED应用中面板拼接时的边框，且在制备薄膜晶体管的时候可以节省原有的金属遮光层的沉积和图形化步骤。

Description

一种TFT驱动背板及Micro-LED显示器 技术领域
本申请涉及显示技术领域，尤其涉及一种用于Micro-LED显示的TFT驱动背板及Micro-LED显示器。
 背景技术
Micro-LED技术，即LED微缩化和矩阵化技术，是指在一个芯片上集成的高密度微小尺寸的LED阵列，如LED显示屏每一个像素可定址、单独驱动点亮，将像素点距离从毫米级降低至微米级。Micro-LED的一个重要应用领域是超大尺寸的显示。
目前，Micro-LED所用的驱动背板为顶栅低温多晶硅薄膜晶体管(Top Gate LTPS TFT)。目前低温多晶体硅薄膜晶体管(LTPS)仅能在6代线(玻璃尺寸1.5米×1.85米)进行生产，母板玻璃尺寸较小，在针对超大尺寸的应用方面产能容易遇到瓶颈。而氧化物薄膜晶体管技术能够在大世代线进行生产(11代线，3.37米×2.94米)。因此，氧化物薄膜晶体管技术在大尺寸Micro-LED的应用方面有优势。
 技术问题
但是，Micro-LED显示(display)对驱动背板的中薄膜晶体管的迁移率要求较高，需要场效应迁移率大于30cm 2/Vs。目前，以IGZO(Indium Gallium Zinc Oxide，铟镓锌氧化物)为主的氧化物薄膜晶体管迁移率一般为10cm 2/Vs，难以满足的Micro-LED显示的要求。
另外，在大尺寸的Micro-LED应用中多采用拼接技术。常规面板的边缘区域为走线和与驱动芯片连接的区域，通常为3-50mm。因此在拼接时的边框会形成黑线，影响显示效果。
因此，如何解决现有氧化物半导体材料迁移率较低，难以满足Micro-LED显示需求的问题。以及如何减少拼接时的边框并减少制备薄膜晶体管驱动背板时的工艺步骤，是目前面向Micro-LED显示应用技术发展急需解决的技术问题。
 技术解决方案
本申请的目的在于，针对现有技术存在的问题，提供一种TFT驱动背板及Micro-LED显示器，可以实现满足大尺寸Micro-LED显示需求，能够解决现有氧化物半导体材料迁移率较低，难以满足Micro-LED显示需求的问题，且可以减少拼接时的边框并减少制备薄膜晶体管驱动背板时的工艺步骤。
为实现上述目的，本申请提供了一种TFT驱动背板，所述TFT驱动背板包括一衬底基板；所述衬底基板的上方设有一有源层，所述有源层采用迁移率大于或等于30cm 2/Vs的氧化物半导体材料，通过磁控溅射的方式制备；所述衬底基板的下方设有一背面金属层，所述背面金属层包括一金属光阻挡层和用于连接驱动芯片的一金属走线层，所述金属光阻挡层相对于所述有源层设置，其中，所述金属光阻挡层的长度大于所述有源层的沟道区的长度，所述金属光阻挡层的宽度大于所述有源层的沟道区的宽度，且所述有源层的沟道区与所述金属光阻挡层中心对齐。
为实现上述目的，本申请还提供了一种TFT驱动背板，所述TFT驱动背板包括一衬底基板；所述衬底基板的上方设有一有源层，所述有源层采用迁移率大于或等于30cm 2/Vs的氧化物半导体材料制备；所述衬底基板的下方设有一背面金属层，所述背面金属层包括一金属光阻挡层和用于连接驱动芯片的一金属走线层，所述金属光阻挡层相对于所述有源层设置。
为实现上述目的，本申请还提供了一种Micro-LED显示器，所述Micro-LED显示器包括一TFT驱动背板，所述TFT驱动背板包括一衬底基板；所述衬底基板的上方设有一有源层，所述有源层采用迁移率大于或等于30cm 2/Vs的氧化物半导体材料，通过磁控溅射的方式制备；所述衬底基板的下方设有一背面金属层，所述背面金属层包括一金属光阻挡层和用于连接驱动芯片的一金属走线层，所述金属光阻挡层相对于所述有源层设置。
有益效果
本申请通过采用高迁移率氧化物薄膜晶体管驱动背板结构，可以实现满足大尺寸Micro-LED显示需求；采用在衬底基板的下方制备背面金属层，背面金属层包括用于连接驱动芯片的金属走线层，以及用于阻挡环境光的金属光阻挡层，减少了大尺寸的Micro-LED应用中面板拼接时的边框，且在制备薄膜晶体管的时候可以节省原有的金属遮光层的沉积和图形化步骤，减少了制备TFT驱动背板时的工艺步骤，节约制备成本。
 附图说明
为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其它的附图。
图1，本申请TFT驱动背板第一实施例的层状结构示意图；
图2，氧化物薄膜晶体管IV曲线；
图3，本申请TFT驱动背板第二实施例的层状结构示意图。
 本发明的实施方式
下面详细描述本申请的实施方式，所述实施方式的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施方式是示例性的，仅用于解释本申请，而不能理解为对本申请的限制。
在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。
下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。
本申请提出了一种新型的适用于大尺寸Micro-LED应用的TFT驱动背板，所述TFT驱动背板包括一衬底基板；所述衬底基板的上方设有一有源层，所述有源层采用迁移率大于或等于30cm 2/Vs的氧化物半导体材料制备；所述衬底基板的下方制备有一背面金属层，所述背面金属层包括一金属光阻挡层(Metal Light Shield Layer)，所述金属光阻挡层相对于所述有源层设置。
采用本申请TFT驱动背板，可以实现满足大尺寸Micro-LED显示需求的高迁移率氧化物薄膜晶体管驱动背板结构，能够解决现有氧化物半导体材料迁移率较低，难以满足Micro-LED显示需求的问题。同时，在驱动背板的背面相对于薄膜晶体管的有源层区域，采用具有遮光性的金属制备金属光阻挡层，用于阻挡环境光。金属光阻挡层能够起到与现有薄膜晶体管中金属遮光层(Shield Metal Layer)相同的作用，因此本申请驱动背板的薄膜晶体管中不再需要金属遮光层。从而，本申请在制备薄膜晶体管的时候可以节省原有的金属遮光层的沉积和图形化步骤，进而减少制备TFT驱动背板时的工艺步骤，节约制备成本。
优选地，所述背面金属层还包括用于连接驱动芯片的一金属走线层，从而可以将驱动芯片放置在驱动背板的背面，以压缩面板边框。也即，为了减少大尺寸的Micro-LED应用中面板拼接时的边框，本申请TFT驱动背板通过在侧面和背后制备金属走线层，从而可以将驱动芯片放置在驱动背板的背面，进而可以减少拼接时的边框，节约制备成本。
请参阅图1-2，其中，图1为本申请TFT驱动背板第一实施例的层状结构示意图，图2为氧化物薄膜晶体管IV曲线。
如图1所示，本申请TFT驱动背板包括：一衬底基板101，设于所述衬底基板101上的一有源层(Act)102，设于所述有源层102上的一栅极绝缘层(GI)103，设于所述栅极绝缘层103上的一栅极(GE)104，设于所述栅极104上并覆盖所述栅极104、所述栅极绝缘层103、所述有源层102及所述衬底基板101的一介电绝缘层(ILD)105，设于所述介电绝缘层105上的一第一源/漏极金属层(S/D1)106，设于所述第一源/漏极金属层106上并覆盖所述第一源/漏极金属层106及所述介电绝缘层105的一第一钝化层(VIA1)107，设于所述第一钝化层107上的一第二源/漏极金属层(S/D2)108，设于所述第二源/漏极金属层108上并覆盖所述第二源/漏极金属层108的一第二钝化层(VIA2)109，设于所述第二钝化层109上的一第三源/漏极金属层(S/D3)111，以及设于所述第三源/漏极金属层111上的一第一透明导电层(ITO1)112。本实施例中，所述第二钝化层109上设有一第三钝化层(VIA3)113，通过对所述第三钝化层113蚀刻，以暴露出所述第三源/漏极金属层111的制备区域。
在本实施例中，所述有源层102包括对应于所述栅极104的沟道区1022，及位于所述沟道区1022两侧的源/漏极接触区1021；所述第一源/漏极金属层106包括源/漏极1061，所述源/漏极接触区1021与所述源/漏极1061之间设有第一通孔1051，所述源/漏极1061通过所述第一通孔1051与所述源/漏极接触区1021相接触。所述第二源/漏极金属层108包括电极连接线1081及第一驱动电源线1082，所述电极连接线1081及所述第一驱动电源线1082与所述源/漏极1061之间分别设有第二通孔1071，所述源/漏极161分别通过相应的第二通孔1071与所述电极连接线1081及所述第一驱动电源线1082相连接。所述有源层102、所述栅极1041、所述源/漏极1081构成所述TFT驱动背板的薄膜晶体管。所述第三源/漏极金属层111包括图案化的阳极(Anode)1110及第二驱动电源线1111；所述阳极1110与所述电极连接线1081之间设有第三通孔1091，所述阳极1110通过所述第三通孔1091与所述电极连接线1081相连接。本实施例中，所述第一驱动电源线1082用于提供电压驱动信号(VDD)，所述第二驱动电源线1111用于提供电源开关信号(VSS)。所述第一透明导电层112作为像素电极。
在本实施例中，所述TFT驱动背板采用三层源/漏金属层。需要说明的是，采用单层源/漏金属层或两层及以上的多层源/漏金属层都是可以采用改进后的本申请所述TFT驱动背板的结构，即有源层采用迁移率大于或等于30cm 2/Vs的氧化物半导体材料制备，在背板背面相对于有源层位置设置一层金属光阻挡层。
具体的，所述衬底基板101可以玻璃基板或采用高分子聚合物制备的柔性基板，高分子聚合物可以为聚酰亚胺(PI)。
具体的，所述有源层102采用迁移率大于或等于30cm 2/Vs的氧化物半导体材料，并采用磁控溅射的方式制备。所述氧化物半导体材料可以为含铟(In)和锡(Sn)，且迁移率大于或等于30cm 2/Vs的氧化物半导体材料；也可以为含镓(Ga)和锡(Sn)，且迁移率大于或等于30cm 2/Vs的氧化物半导体材料；也可以为含铟(In)、氟(F)和氧(O)，且迁移率大于或等于30cm 2/Vs的氧化物半导体材料。如图2所示，横坐标为栅极电压V G(单位为伏特(V))，纵坐标为源/漏极电流I DS(单位为安培(A))，图中两曲线分别用于示意不同迁移率μ FE(单位为厘米²/(伏·秒)，即cm²/V s)。迁移率越高，薄膜晶体管器件的运行速度越快，截止频率就越高。因此，本申请通过采用迁移率大于或等于30cm 2/Vs的氧化物半导体材料制备有源层，使得本申请TFT 驱动背板可以面向Micro-LED显示应用，满足大尺寸Micro-LED显示需求。
具体的，所述第一钝化层(VIA1)107、第二钝化层(VIA2)109、第三钝化层(VIA3)113可以采用相同材料制成。
在本实施例中，所述衬底基板101的下方制备有一背面金属层，所述背面金属层包括：相对于所述有源层102的沟道区1022设置的一金属光阻挡层(Metal Light Shield Layer)121，设于所述金属光阻挡层121下方并覆盖所述金属光阻挡层121及所述衬底基板101背面的一背面绝缘层122，设于所述背面绝缘层122下方的一金属走线层123。即，在制备背面金属走线层的同时在背面制备金属遮光结构，从而在制备薄膜晶体管的时候可以节省原有的金属遮光层的沉积和图形化步骤。其中，对所述背面绝缘层122进行蚀刻，形成暴露出部分所述金属光阻挡层121的通孔，所述金属走线层123通过该通孔与所述金属光阻挡层121相接触。
具体的，所述金属光阻挡层121的材料为具有光阻挡作用的金属，例如IZO、CuCa叠加构成的复合层，也可以为其它具有光阻挡作用的金属材料。优选的，所述金属光阻挡层121的长度和宽度均大于所述有源层102的沟道区1022的长度和宽度；且所述有源层102的沟道区1022与所述金属光阻挡层121两者中心对齐，从而有效阻挡环境光，以对所述有源层102进行遮光保护。
具体的，所述背面绝缘层122可以为氧化硅(SiOx)层，或氮化硅(SiNx)层，或氮氧化硅(SiOxNy)层。
具体的，所述金属走线层123的金属走线用于连接驱动芯片，从而可以将驱动芯片放置在驱动背板的背面，以压缩面板边框。优选地，所述金属走线层123采用透明导电材料(ITO)制成。
本申请TFT驱动背板，采用高迁移率氧化物薄膜晶体管驱动背板结构，可以实现满足大尺寸Micro-LED显示需求；采用在衬底基板的下方制备背面金属层，背面金属层包括用于连接驱动芯片的金属走线层，以及用于阻挡环境光的金属光阻挡层，减少了大尺寸的Micro-LED应用中面板拼接时的边框，且在制备薄膜晶体管的时候可以节省原有的金属遮光层的沉积和图形化步骤，减少了制备TFT驱动背板时的工艺步骤，节约制备成本。
请参阅图3，本申请TFT驱动背板第二实施例的层状结构示意图。与图1所示实施例的不同之处在于，在本实施例中，所述衬底基板101与所述有源层102之间还设有一缓冲层(Buffer)301。具体的，所述缓冲层301可以为氧化硅(SiOx)层或氮化硅(SiNx)层，或者由氧化硅层与氮化硅层叠加构成的复合层。
基于同一发明构思，本申请还提供了一种Micro-LED显示器，所述Micro-LED显示器包括一TFT驱动背板，所述TFT驱动背板采用本申请上述的TFT驱动背板。本申请Micro-LED显示器采用高迁移率氧化物薄膜晶体管驱动背板结构，可以实现满足大尺寸Micro-LED显示需求；采用在衬底基板的下方制备背面金属层，背面金属层包括用于连接驱动芯片的金属走线层，以及用于阻挡环境光的金属光阻挡层，减少了大尺寸的Micro-LED应用中面板拼接时的边框，且在制备薄膜晶体管的时候可以节省原有的金属遮光层的沉积和图形化步骤，减少了制备TFT驱动背板时的工艺步骤，节约制备成本。
 工业实用性
本申请的主题可以在工业中制造和使用，具备工业实用性。

Claims (20)

  1. 一种TFT驱动背板，所述TFT驱动背板包括一衬底基板；其中，所述衬底基板的上方设有一有源层，所述有源层采用迁移率大于或等于30cm 2/Vs的氧化物半导体材料，通过磁控溅射的方式制备；所述衬底基板的下方设有一背面金属层，所述背面金属层包括一金属光阻挡层和用于连接驱动芯片的一金属走线层，所述金属光阻挡层相对于所述有源层设置，并且其中，所述金属光阻挡层的长度大于所述有源层的沟道区的长度，所述金属光阻挡层的宽度大于所述有源层的沟道区的宽度，且所述有源层的沟道区与所述金属光阻挡层中心对齐。
  2. 如权利要求1所述的TFT驱动背板，其中，所述氧化物半导体材料为含铟和锡，且迁移率大于或等于30cm 2/Vs的氧化物半导体材料；或为含镓和锡，且迁移率大于或等于30cm 2/Vs的氧化物半导体材料；或为含铟、氟和氧，且迁移率大于或等于30cm 2/Vs的氧化物半导体材料。
  3. 如权利要求1所述的TFT驱动背板，其中，所述衬底基板的上方还设有单层源/漏金属层或多层源/漏金属层。
  4. 如权利要求1所述的TFT驱动背板，其中，所述TFT驱动背板进一步包括：依次设于所述有源层上的一栅极绝缘层、一栅极；一介电绝缘层，覆盖所述栅极、所述栅极绝缘层、所述有源层及所述衬底基板；以及依次设于所述介电绝缘层上的一第一源/漏极金属层及一第一钝化层；其中，所述有源层包括对应于所述栅极的沟道区及位于所述沟道区两侧的源/漏极接触区，所述第一源/漏极金属层包括源/漏极，所述源/漏极接触区与所述源/漏极之间设有第一通孔，所述源/漏极通过所述第一通孔与所述源/漏极接触区相接触。
  5. 如权利要求4所述的TFT驱动背板，其中，所述TFT驱动背板进一步包括：依次设于所述第一钝化层上的一第二源/漏极金属层、一第二钝化层、一第三源/漏极金属层及一第一透明导电层；其中，所述第二源/漏极金属层包括电极连接线及第一驱动电源线，所述电极连接线及所述第一驱动电源线与所述源/漏极之间分别设有第二通孔，所述源/漏极分别通过相应的第二通孔与所述电极连接线及所述第一驱动电源线相连接；所述第三源/漏极金属层包括阳极及第二驱动电源线，所述阳极与所述电极连接线之间设有第三通孔，所述阳极通过所述第三通孔与所述电极连接线相连接。
  6. 如权利要求4所述的TFT驱动背板，其中，所述TFT驱动背板进一步包括：设于所述有源层及所述衬底基板之间的一缓冲层。
  7. 一种TFT驱动背板，所述TFT驱动背板包括一衬底基板；其中，所述衬底基板的上方设有一有源层，所述有源层采用迁移率大于或等于30cm 2/Vs的氧化物半导体材料制备；所述衬底基板的下方设有一背面金属层，所述背面金属层包括一金属光阻挡层和用于连接驱动芯片的一金属走线层，所述金属光阻挡层相对于所述有源层设置。
  8. 如权利要求7所述的TFT驱动背板，其中，所述氧化物半导体材料为含铟和锡，且迁移率大于或等于30cm 2/Vs的氧化物半导体材料；或为含镓和锡，且迁移率大于或等于30cm 2/Vs的氧化物半导体材料；或为含铟、氟和氧，且迁移率大于或等于30cm 2/Vs的氧化物半导体材料。
  9. 如权利要求7所述的TFT驱动背板，其中，所述有源层采用磁控溅射的方式制备。
  10. 如权利要求7所述的TFT驱动背板，其中，所述金属光阻挡层的长度大于所述有源层的沟道区的长度，所述金属光阻挡层的宽度大于所述有源层的沟道区的宽度，且所述有源层的沟道区与所述金属光阻挡层中心对齐。
  11. 如权利要求7所述的TFT驱动背板，其中，所述衬底基板的上方还设有单层源/漏金属层或多层源/漏金属层。
  12. 如权利要求7所述的TFT驱动背板，其中，所述TFT驱动背板进一步包括：依次设于所述有源层上的一栅极绝缘层、一栅极；一介电绝缘层，覆盖所述栅极、所述栅极绝缘层、所述有源层及所述衬底基板；以及依次设于所述介电绝缘层上的一第一源/漏极金属层及一第一钝化层；其中，所述有源层包括对应于所述栅极的沟道区及位于所述沟道区两侧的源/漏极接触区，所述第一源/漏极金属层包括源/漏极，所述源/漏极接触区与所述源/漏极之间设有第一通孔，所述源/漏极通过所述第一通孔与所述源/漏极接触区相接触。
  13. 如权利要求12所述的TFT驱动背板，其中，所述TFT驱动背板进一步包括：依次设于所述第一钝化层上的一第二源/漏极金属层、一第二钝化层、一第三源/漏极金属层及一第一透明导电层；其中，所述第二源/漏极金属层包括电极连接线及第一驱动电源线，所述电极连接线及所述第一驱动电源线与所述源/漏极之间分别设有第二通孔，所述源/漏极分别通过相应的第二通孔与所述电极连接线及所述第一驱动电源线相连接；所述第三源/漏极金属层包括阳极及第二驱动电源线，所述阳极与所述电极连接线之间设有第三通孔，所述阳极通过所述第三通孔与所述电极连接线相连接。
  14. 如权利要求12所述的TFT驱动背板，其中，所述TFT驱动背板进一步包括：设于所述有源层及所述衬底基板之间的一缓冲层。
  15. 一种Micro-LED显示器，其中，所述Micro-LED显示器包括一TFT驱动背板，所述TFT驱动背板包括一衬底基板；所述衬底基板的上方设有一有源层，所述有源层采用迁移率大于或等于30cm 2/Vs的氧化物半导体材料，通过磁控溅射的方式制备；所述衬底基板的下方设有一背面金属层，所述背面金属层包括一金属光阻挡层和用于连接驱动芯片的一金属走线层，所述金属光阻挡层相对于所述有源层设置。
  16. 如权利要求15所述的显示器，其中，所述氧化物半导体材料为含铟和锡，且迁移率大于或等于30cm 2/Vs的氧化物半导体材料；或为含镓和锡，且迁移率大于或等于30cm 2/Vs的氧化物半导体材料；或为含铟、氟和氧，且迁移率大于或等于30cm 2/Vs的氧化物半导体材料。
  17. 如权利要求15所述的显示器，其中，所述金属光阻挡层的长度大于所述有源层的沟道区的长度，所述金属光阻挡层的宽度大于所述有源层的沟道区的宽度，且所述有源层的沟道区与所述金属光阻挡层中心对齐。
  18. 如权利要求15所述的显示器，其中，所述衬底基板的上方还设有单层源/漏金属层或多层源/漏金属层。
  19. 如权利要求15所述的显示器，其中，所述TFT驱动背板进一步包括：依次设于所述有源层上的一栅极绝缘层、一栅极；一介电绝缘层，覆盖所述栅极、所述栅极绝缘层、所述有源层及所述衬底基板；以及依次设于所述介电绝缘层上的一第一源/漏极金属层及一第一钝化层；其中，所述有源层包括对应于所述栅极的沟道区及位于所述沟道区两侧的源/漏极接触区，所述第一源/漏极金属层包括源/漏极，所述源/漏极接触区与所述源/漏极之间设有第一通孔，所述源/漏极通过所述第一通孔与所述源/漏极接触区相接触。
  20. 如权利要求19所述的显示器，其中，所述TFT驱动背板进一步包括：设于所述有源层及所述衬底基板之间的一缓冲层。
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