JP6807712B2 - 表示装置 - Google Patents
表示装置 Download PDFInfo
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- JP6807712B2 JP6807712B2 JP2016223266A JP2016223266A JP6807712B2 JP 6807712 B2 JP6807712 B2 JP 6807712B2 JP 2016223266 A JP2016223266 A JP 2016223266A JP 2016223266 A JP2016223266 A JP 2016223266A JP 6807712 B2 JP6807712 B2 JP 6807712B2
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- 239000000463 material Substances 0.000 claims description 58
- 239000002184 metal Substances 0.000 claims description 28
- 238000005070 sampling Methods 0.000 claims description 16
- 239000010410 layer Substances 0.000 description 114
- 239000010408 film Substances 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 239000012044 organic layer Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/4985—Flexible insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
以下、本開示の実施の形態について、図面に基づいて説明する。
Claims (7)
- 絶縁性基材と、
前記絶縁性基材内に設けられ、電源に電気的に接続された金属層と、
前記絶縁性基材上に設けられた絶縁層と、
前記絶縁層の上方に設けられた表示素子と、
前記絶縁層の上方に設けられたドライバICと、
前記絶縁層の上方に設けられ前記表示素子と前記ドライバICとを接続する信号線と、
前記表示素子と前記金属層とを電気的に接続するスルーホールと、
を含む表示装置。 - 前記絶縁性基材は、第1の絶縁性基材と、前記第1の絶縁性基材の上方に設けられた第2の絶縁性基材と、を含み、
前記金属層は、前記第1の絶縁性基材と、前記第2の絶縁性基材との間に設けられ、
前記第2の絶縁性基材の下面に設けられた穴から前記金属層の配線接続部が露出され、
前記配線接続部が可撓性回路基板を介して前記電源に接続される、
請求項1に記載の表示装置。 - 前記表示素子は、
前記スルーホールに電気的に接続される配線と、
前記配線に電気的に接続される駆動TFTと、
前記駆動TFTに電気的に接続される有機EL層と、
を含む、
請求項1又は2に記載の表示装置。 - 前記絶縁層は、第1の絶縁層と、前記第1の絶縁層の上方に設けられた第2の絶縁層と、を含み、
前記第2の絶縁層の一部が、前記表示素子に含まれる前記駆動TFTの一部として機能する、
請求項3に記載の表示装置。 - 前記表示素子は、前記信号線に電気的に接続されるサンプリングTFTを含む、
請求項1乃至4のいずれかに記載の表示装置。 - 前記絶縁層は、第1の絶縁層と、前記第1の絶縁層の上方に設けられた第2の絶縁層と、を含み、
前記第2の絶縁層の一部が、前記表示素子に含まれる前記サンプリングTFTの一部として機能する、
請求項5に記載の表示装置。 - 前記絶縁性基材の比誘電率が、前記絶縁層の比誘電率よりも低い、
請求項1乃至6のいずれかに記載の表示装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016223266A JP6807712B2 (ja) | 2016-11-16 | 2016-11-16 | 表示装置 |
US15/804,075 US10217808B2 (en) | 2016-11-16 | 2017-11-06 | Display device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016223266A JP6807712B2 (ja) | 2016-11-16 | 2016-11-16 | 表示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018081197A JP2018081197A (ja) | 2018-05-24 |
JP6807712B2 true JP6807712B2 (ja) | 2021-01-06 |
Family
ID=62108248
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016223266A Active JP6807712B2 (ja) | 2016-11-16 | 2016-11-16 | 表示装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US10217808B2 (ja) |
JP (1) | JP6807712B2 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107256870A (zh) * | 2017-06-09 | 2017-10-17 | 京东方科技集团股份有限公司 | 一种阵列基板及制作方法、柔性显示面板、显示装置 |
CN109585462A (zh) * | 2019-01-23 | 2019-04-05 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法、柔性显示面板、拼接屏 |
CN110416225A (zh) * | 2019-07-24 | 2019-11-05 | 深圳市华星光电半导体显示技术有限公司 | 一种TFT驱动背板及Micro-LED显示器 |
KR20210156112A (ko) * | 2020-06-17 | 2021-12-24 | 엘지디스플레이 주식회사 | 전자 장치 및 이를 이용한 표시 장치 |
KR20220021062A (ko) | 2020-08-12 | 2022-02-22 | 삼성디스플레이 주식회사 | 표시 장치 및 이를 포함하는 타일형 표시 장치 |
KR20220041262A (ko) * | 2020-09-24 | 2022-04-01 | 삼성디스플레이 주식회사 | 표시 장치 및 이를 포함하는 타일형 표시 장치 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000098930A (ja) * | 1998-06-10 | 2000-04-07 | Matsushita Electric Ind Co Ltd | ディスプレイデバイス |
KR100635042B1 (ko) * | 2001-12-14 | 2006-10-17 | 삼성에스디아이 주식회사 | 전면전극을 구비한 평판표시장치 및 그의 제조방법 |
JP2010055070A (ja) * | 2008-07-30 | 2010-03-11 | Sumitomo Chemical Co Ltd | 表示装置および表示装置の製造方法 |
JP5313590B2 (ja) * | 2008-08-29 | 2013-10-09 | エルジー ディスプレイ カンパニー リミテッド | 画像表示装置 |
JP2013038229A (ja) * | 2011-08-08 | 2013-02-21 | Seiko Epson Corp | 電気装置の製造方法、半導体基板の製造方法、電気装置用形成基板、及び電子機器 |
JP6305759B2 (ja) * | 2013-12-26 | 2018-04-04 | 株式会社ジャパンディスプレイ | 表示装置 |
JP6253541B2 (ja) | 2014-07-30 | 2017-12-27 | 株式会社ジャパンディスプレイ | 表示装置 |
-
2016
- 2016-11-16 JP JP2016223266A patent/JP6807712B2/ja active Active
-
2017
- 2017-11-06 US US15/804,075 patent/US10217808B2/en active Active
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Publication number | Publication date |
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US20180138260A1 (en) | 2018-05-17 |
US10217808B2 (en) | 2019-02-26 |
JP2018081197A (ja) | 2018-05-24 |
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