WO2020261868A1 - 基板処理装置および基板処理方法 - Google Patents

基板処理装置および基板処理方法 Download PDF

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Publication number
WO2020261868A1
WO2020261868A1 PCT/JP2020/021121 JP2020021121W WO2020261868A1 WO 2020261868 A1 WO2020261868 A1 WO 2020261868A1 JP 2020021121 W JP2020021121 W JP 2020021121W WO 2020261868 A1 WO2020261868 A1 WO 2020261868A1
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Prior art keywords
substrate
guard
space
peripheral end
holding unit
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PCT/JP2020/021121
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English (en)
French (fr)
Japanese (ja)
Inventor
仁司 中井
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株式会社Ｓｃｒｅｅｎホールディングス
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Priority to CN202080038691.8A priority Critical patent/CN113874992A/zh
Priority to KR1020227002322A priority patent/KR102641259B1/ko
Publication of WO2020261868A1 publication Critical patent/WO2020261868A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

Definitions

  • the present invention relates to a substrate processing apparatus and a substrate processing method.
  • substrates to be processed include semiconductor wafers, substrates for liquid crystal display devices, substrates for FPDs (Flat Panel Display) such as organic EL (Electroluminescence) display devices, substrates for optical disks, substrates for magnetic disks, and substrates for optomagnetic disks. Includes substrates, photomask substrates, ceramic substrates, solar cell substrates, and the like.
  • a single-wafer type substrate processing device that processes the substrates one by one may be used.
  • This single-wafer type substrate processing apparatus is held by, for example, a spin chuck that holds and rotates the substrate substantially horizontally, a nozzle for supplying a processing liquid to the substrate rotated by the spin chuck, and a spin chuck. It includes a blocking member facing the surface (upper surface) of the substrate, a processing cup for capturing the processing liquid discharged from the substrate, and a chamber for accommodating a spin chuck, a blocking member, and the like.
  • the spin chuck has, for example, a disk-shaped spin base having an outer diameter larger than the outer diameter of the substrate, and an outer peripheral portion of the upper surface of the spin base on the circumference corresponding to the outer peripheral shape of the substrate. Includes a plurality of holding members provided at appropriate intervals.
  • the blocking member more effectively isolates the upper space from the outer space, which is the space around the upper space above the substrate (the space formed between the substrate and the blocking member).
  • a disk portion arranged above the substrate held by the spin chuck and a cylindrical portion hanging from the peripheral edge of the disk portion are provided. Since the gap formed between the lower end of the cylindrical portion of the blocking member and the outer peripheral edge of the upper surface of the spin base is kept narrow (see FIG. 3 of Patent Document 1), oxygen in the outer space is contained. It is possible to effectively suppress the atmosphere from entering the upper space. As a result, the upper space can be maintained in a low oxygen environment.
  • the processing cup is provided with a plurality of guards.
  • a plurality of guards partition the exhaust gas and the exhaust liquid path through which the drainage liquid passes. Exhaust is exhausted by depressurizing the exhaust liquid path by driving the exhaust device.
  • the inner peripheral end of each guard surrounds the cylindrical portion of the blocking member and is adjacent to the cylindrical portion of the blocking member.
  • the spin chuck includes a holding type spin chuck that holds the board horizontally by sandwiching the board horizontally with a plurality of holding members arranged around the board, and a vacuum that holds the board horizontally by suction on the lower surface of the board.
  • a spin chuck of the formula (so-called vacuum chuck) is included.
  • a disk-shaped spin base having an outer diameter larger than the outer diameter of the substrate is used.
  • a disk-shaped spin base having an outer diameter smaller than the outer diameter of the substrate is used.
  • the outer peripheral portion of the spin base is arranged outside the peripheral end surface of the substrate. Therefore, in the substrate processing apparatus described in Patent Document 1, the outer peripheral portion of the spin base is arranged below the gap between the peripheral end surface of the substrate and the cylindrical portion of the blocking member.
  • the outer peripheral portion of the spin base is arranged inside the peripheral end surface of the substrate, so even if a blocking member having a disk portion and a cylindrical portion is used, an atmosphere containing oxygen is created. , There is a possibility of entering the space between the upper surface of the substrate and the blocking member through the gap between the peripheral end surface of the substrate and the cylindrical portion of the blocking member (see FIG. 12).
  • an object of the present invention is a substrate processing apparatus and a substrate treatment capable of performing a treatment using a chemical solution on the upper surface of the substrate in a low oxygen environment when supporting the central portion of the substrate instead of the outer peripheral portion of the substrate. To provide a method.
  • One embodiment of the present invention has a chamber and a base plate that is located below the substrate and is smaller than the substrate in plan view, and holds the substrate on the base plate horizontally inside the chamber.
  • a second guard that surrounds the inner guard and the circumference of the first cylindrical portion so that the inner peripheral end of the first guard tip portion horizontally opposes the peripheral end surface of the substrate with a first annular gap. It has a cylindrical portion and a second guard tip portion extending from the upper end of the second cylindrical portion toward the vertical line and located above the first guard tip portion, and the second guard tip portion.
  • the inner peripheral end of the guard tip portion of the guard has an outer guard that horizontally faces the outer peripheral end of the disk portion with a second annular gap, and the first guard tip portion and the first guard tip portion and the first guard tip portion.
  • a processing cup in which a first space partitioned by a guard tip of 2 and an exhaust path communicating with the first space are formed inside, and the substrate held by the substrate holding unit.
  • An inert gas supply unit formed between the blocking member and supplying the inert gas to the second space communicating with the first space, and the substrate held by the substrate holding unit.
  • a chemical solution supply unit that supplies a chemical solution to the upper surface, the inert gas supply unit, and a control device that controls the chemical solution supply unit are included, and the control device is moved into the second space by the inert gas supply unit. It is held by the substrate holding unit in parallel with the positive pressure maintenance step of supplying an inert gas to keep both the first space and the second space at positive pressure and the positive pressure maintenance step.
  • a substrate processing apparatus for executing a chemical solution treatment step of supplying a chemical solution to the upper surface of the substrate by the chemical solution supply unit and performing a treatment using the chemical solution on the upper surface of the substrate.
  • the blocking member arranged above the substrate held by the substrate holding unit faces the upper surface of the substrate so that the distance between the substrate facing surface and the upper surface of the substrate becomes a predetermined distance. ..
  • the inner peripheral end of the first guard tip portion faces the peripheral end surface of the substrate in the horizontal direction with a first annular gap in between.
  • the inner peripheral end of the second guard tip is horizontally opposed to the outer peripheral end of the disc portion of the blocking member with a second annular gap in between.
  • the first space (the space partitioned by the first guard tip and the second guard tip) and the second space (the substrate and the cutoff). Both sides of the space formed between the member and the member are kept at positive pressure.
  • the oxygen-containing atmosphere in the approach space which is the space in the chamber communicating with the first space and the second space, enters the second space through the two annular gaps. Can be suppressed.
  • the second space can be maintained in a low oxygen environment.
  • Treatment with a chemical solution is performed on the upper surface of the substrate while the first space and the second space are maintained at positive pressure by the supply of the inert gas. Thereby, the treatment using the chemical solution can be applied to the substrate in a low oxygen environment.
  • the upper surface of the substrate can be treated with a chemical solution in a low oxygen environment.
  • the positive pressure maintenance step includes a step of supplying an inert gas having a flow rate larger than the flow rate of the exhaust gas discharged from the exhaust path to the second space.
  • the inert gas having a flow rate larger than the flow rate of the exhaust gas discharged from the exhaust path is supplied to the second space.
  • the first space and the second space can be relatively easily maintained at positive pressure.
  • the flow path width in the exhaust path is equal to or less than the total gap distance, which is the sum of the distance of the first annular gap and the distance of the second annular gap.
  • the first space and the second space can be relatively easily maintained at positive pressure. Further, since the total gap distance is equal to or larger than the flow path width in the exhaust path, the atmosphere of the second space in the positive pressure state flows out to the approach space through the first annular gap and the second annular gap. easy. Thereby, it is possible to suppress or prevent the oxygen-containing atmosphere in the proximity space from entering the second space through these two annular gaps.
  • the total gap distance may be equal to or less than the distance between the upper surface of the substrate held by the substrate holding unit and the substrate facing surface of the blocking member.
  • each of the two annular gaps is narrow. Thereby, it is possible to more effectively suppress or prevent the oxygen-containing atmosphere in the proximity space from entering the second space through these two annular gaps. As a result, the second space can be maintained in a low oxygen environment.
  • the flow path width in the exhaust path may be equal to or less than the distance between the upper surface of the substrate held by the substrate holding unit and the substrate facing surface of the blocking member.
  • the first space and the second space can be relatively easily maintained at positive pressure.
  • the flow path width in the exhaust path is equal to or less than the total gap distance, it is preferable that the flow path width is the radial distance between the first cylindrical portion and the second cylindrical portion. ..
  • the radial distance between the first cylindrical portion and the second cylindrical portion is less than or equal to the total clearance distance. Since the flow path width of the exhaust path is narrow, the first space and the second space can be relatively easily maintained at positive pressure.
  • the substrate processing apparatus further comprises an exhaust unit that exhausts the atmosphere of the chamber to the outside of the chamber by sucking the atmosphere inside the processing cup through the exhaust path.
  • the exhaust unit exhausts both the atmosphere of the first space and the atmosphere of the second space and the atmosphere of the space outside the processing cup and inside the chamber.
  • the exhaust unit removes both the atmosphere of the first space and the atmosphere of the second space and the atmosphere of the space outside the processing cup and inside the chamber. Since it is necessary to stabilize the air flow in the chamber, the exhaust force of the exhaust unit cannot be excessively increased.
  • the first space and the second space can be relatively easily maintained at positive pressure without exhausting using a strong exhaust force. ..
  • the inner guard and the outer guard are provided so as to be able to move up and down independently of each other.
  • the vertical distance between the first guard tip and the second guard tip can be adjusted.
  • the first guard tip portion faces the peripheral end surface of the substrate and the second guard against the outer peripheral end of the disc portion of the blocking member. Opposition of the tips can be easily realized.
  • the substrate processing device is provided on at least one of the inner guard and the outer guard, and the inner guard and the outer side in the vertical direction are provided.
  • An exhaust flow rate adjusting ring that changes the pressure loss of the exhaust path by adjusting the flow path width of the exhaust path with relative movement to the guard may be further included.
  • the inner peripheral end of the first guard tip portion of the inner guard is located inside the outer peripheral end of the disk portion in the horizontal direction.
  • the inner peripheral end of the inner guard forming the first annular gap together with the peripheral end surface of the substrate is larger than the outer peripheral end of the disk portion forming the second annular gap together with the inner peripheral end of the outer guard. Since it is located inside, it is possible to keep the second gap away from the peripheral end surface of the substrate. If the peripheral end surface of the substrate is close to the second gap, the outer peripheral portion of the upper surface of the substrate may be oxidized when an atmosphere containing oxygen enters the second space through the second gap. ..
  • a second embodiment of the present invention provides a substrate processing method executed by a substrate processing apparatus.
  • the substrate processing apparatus has a chamber and a base plate which is arranged below the substrate and is smaller than the substrate in a plan view, and holds the substrate on the base plate horizontally inside the chamber.
  • a unit, a blocking member having a disc portion provided with a substrate facing surface facing the upper surface of the substrate held by the substrate holding unit at intervals, and a first surrounding the substrate holding unit. It has a cylindrical portion and a first guard tip portion extending from the upper end of the first cylindrical portion toward a vertical line passing through a central portion of the substrate held by the substrate holding unit.
  • An inner guard in which the inner peripheral end of the guard tip portion 1 faces the peripheral end surface of the substrate horizontally with a first annular gap, and a second cylindrical portion surrounding the circumference of the first cylindrical portion.
  • a second guard tip that extends from the upper end of the second cylinder toward the vertical line and is located above the first guard tip, and has the second guard.
  • the inner peripheral end of the tip portion has an outer guard that is horizontally opposed to the outer peripheral end of the disk portion with a second annular gap in between, and the first guard tip portion and the second guard tip portion.
  • the substrate processing method includes a blocking member facing step of arranging the blocking member above the substrate held by the substrate holding unit while maintaining a constant distance between the substrate facing surface and the upper surface of the substrate.
  • the inner peripheral end of the first guard tip portion horizontally faces the peripheral end surface of the substrate held by the substrate holding unit with a first annular gap in between, and the disc portion of the blocking member.
  • the inert gas is supplied to the second space formed between the substrate and the blocking member held by the substrate holding unit to supply the inert gas to the first space. It is held by the substrate holding unit in parallel with the positive pressure maintaining step of keeping both the space and the second space at positive pressure, the blocking member facing step, the guard facing step, and the positive pressure maintaining step. It includes a chemical solution treatment step of supplying a chemical solution to the upper surface of the substrate and performing a treatment using the chemical solution on the upper surface of the substrate.
  • the blocking member arranged above the substrate held by the substrate holding unit faces the upper surface of the substrate so that the distance between the substrate facing surface and the upper surface of the substrate becomes a predetermined distance. ..
  • the inner peripheral end of the first guard tip portion faces the peripheral end surface of the substrate in the horizontal direction with a first annular gap in between.
  • the inner peripheral end of the second guard tip is horizontally opposed to the outer peripheral end of the disk portion with a second annular gap in between.
  • the first space (the space partitioned by the first guard tip and the second guard tip) and the second space (the substrate and the blocking member)
  • the space formed between and the space) is kept at positive pressure.
  • Treatment with a chemical solution is performed on the upper surface of the substrate while the first space and the second space are maintained at positive pressure by the supply of the inert gas. Thereby, the treatment using the chemical solution can be applied to the substrate in a low oxygen environment.
  • the upper surface of the substrate can be treated with a chemical solution in a low oxygen environment.
  • the positive pressure maintenance step includes a step of supplying an inert gas having a flow rate larger than the flow rate of the exhaust gas discharged from the exhaust path to the second space.
  • the inert gas having a flow rate larger than the flow rate of the exhaust gas discharged from the exhaust path is supplied to the second space.
  • the first space and the second space can be relatively easily maintained at positive pressure.
  • a third embodiment of the present invention has a chamber and a base plate that is located below the substrate and is smaller than the substrate in plan view, with the substrate on the base plate horizontally inside the chamber.
  • a board holding unit to be held a blocking member having a disc portion provided with a board facing surface facing the upper surface of the board held by the board holding unit at intervals, and a periphery of the board holding unit. It has a first cylindrical portion that surrounds it, and a first guard tip that extends from the upper end of the first cylindrical portion toward a vertical line passing through the central portion of the substrate held by the substrate holding unit.
  • the inner peripheral end of the first guard tip portion horizontally faces the peripheral end surface of the substrate with a first annular gap in between, and surrounds the inner guard and the periphery of the first cylindrical portion. It has two cylindrical portions and a second guard tip portion that extends from the upper end of the second cylindrical portion toward the vertical line and is located above the first guard tip portion.
  • the inner peripheral end of the second guard tip portion has an outer guard that is horizontally opposed to the outer peripheral end of the disk portion with a second annular gap in between, and the first guard tip portion.
  • a processing cup in which a first space partitioned by the second guard tip portion and an exhaust path communicating with the first space are internally formed, and the substrate holding unit holds the first space.
  • An inert gas supply unit formed between the substrate and the blocking member and supplying the inert gas to the second space communicating with the first space, and the substrate holding unit holding the inert gas.
  • a substrate processing apparatus including a chemical solution supply unit for supplying a chemical solution to the upper surface of the substrate.
  • the blocking member arranged above the substrate held by the substrate holding unit faces the upper surface of the substrate so that the distance between the substrate facing surface and the upper surface of the substrate becomes a predetermined distance. ..
  • the inner peripheral end of the first guard tip portion faces the peripheral end surface of the substrate in the horizontal direction with a first annular gap in between.
  • the inner peripheral end of the second guard tip is horizontally opposed to the outer peripheral end of the disk portion with a second annular gap in between.
  • the first space (the space partitioned by the first guard tip and the second guard tip) and the second space (the space formed between the substrate and the blocking member) communicate with each other. ing.
  • the inert gas By supplying the inert gas to the second space, it is possible to keep both the first space and the second space at positive pressure. In this case, it is effective that the oxygen-containing atmosphere in the approach space, which is the space in the chamber communicating with the first space and the second space, enters the second space through the two annular gaps. It is possible to suppress it. This makes it possible to keep the second space in a low oxygen environment.
  • the treatment using the chemical solution is performed on the upper surface of the substrate, so that the treatment using the chemical solution is performed in a low oxygen environment. It can be applied to the substrate below.
  • FIG. 1 is a schematic view of a substrate processing apparatus according to an embodiment of the present invention as viewed from above.
  • FIG. 2 is a schematic cross-sectional view for explaining a configuration example of a processing unit provided in the substrate processing apparatus.
  • FIG. 3 is a bottom view of a blocking member provided in the processing unit.
  • FIG. 4A is a diagram showing a guard non-opposing state of the processing cup provided in the processing unit.
  • FIG. 4B is a diagram showing an example of a guard capture state of the processing cup provided in the processing unit.
  • FIG. 5 is a block diagram for explaining the electrical configuration of the main part of the substrate processing apparatus.
  • FIG. 6 is an enlarged cross-sectional view showing the surface of the substrate processed by the substrate processing apparatus.
  • FIG. 7 is a flow chart for explaining the contents of a substrate processing example executed in the processing unit.
  • FIG. 8A is a schematic diagram for explaining the substrate processing example.
  • FIG. 8B is a schematic diagram for explaining the steps following FIG. 8A.
  • FIG. 8C is a schematic diagram for explaining the steps following FIG. 8B.
  • FIG. 9 is a diagram for explaining a first modification of the present invention.
  • FIG. 10 is a diagram for explaining a second modification of the present invention.
  • FIG. 11 is a diagram for explaining a third modification of the present invention.
  • FIG. 12 is a diagram for explaining substrate processing using a spin chuck that attracts and holds the central portion of the substrate.
  • FIG. 1 is a schematic view of the substrate processing apparatus 1 according to the embodiment of the present invention as viewed from above.
  • the substrate processing device 1 is a single-wafer type device that processes substrates W such as silicon wafers one by one.
  • the substrate W is a disc-shaped substrate.
  • the substrate processing apparatus 1 is a load port LP on which a plurality of processing units 2 for processing the substrate W using the processing fluid and a substrate container C accommodating a plurality of substrates W processed by the processing unit 2 are mounted.
  • the indexer robot IR and the transfer robot CR that transfer the substrate W between the load port LP and the processing unit 2, and the control device 3 that controls the substrate processing device 1 are included.
  • the indexer robot IR transfers the substrate W between the substrate container C and the transfer robot CR.
  • the transfer robot CR transfers the substrate W between the indexer robot IR and the processing unit 2.
  • the plurality of processing units 2 have, for example, a similar configuration.
  • FIG. 2 is a schematic cross-sectional view for explaining a configuration example of the processing unit 2.
  • FIG. 3 is a bottom view of the blocking member 6.
  • FIG. 4A is a diagram showing a guard non-opposing state of the processing cup 13.
  • FIG. 4B is a diagram showing an example of a guard capture state (second guard capture state) of the processing cup 13.
  • the processing unit 2 holds the box-shaped chamber 4 and one substrate W in the chamber 4 in a horizontal posture, and holds a vertical rotation axis (predetermined) passing through the center of the substrate W.
  • the space above the spin chuck (board holding unit) 5 that rotates the board W around A1 and the upper surface (surface Wa (see FIG. 6)) of the board W held by the spin chuck 5 is around it.
  • the processing unit 2 further extends vertically inside the blocking member 6, and the processing gas or processing liquid (chemical solution, rinsing solution, organic solvent) is directed toward the central portion of the upper surface of the substrate W held by the spin chuck 5.
  • a central nozzle 7 for discharging a processing fluid such as, a chemical solution supply unit 8 for supplying a fluorophore as an example of a chemical solution to the central nozzle 7, and a rinse for supplying a rinse solution to the central nozzle 7.
  • a liquid supply unit 9, an organic solvent supply unit 10 that supplies an organic solvent as a low surface tension liquid to the central nozzle 7, an inert gas supply unit 11 that supplies an inert gas to the central nozzle 7, and a spin chuck 5. Includes a tubular processing cup 13 that surrounds the sides.
  • the chamber 4 has a box-shaped partition wall 18 for accommodating the spin chuck 5 and the blocking member 6, and an FFU (fan. It includes a filter unit (19) and an exhaust duct (exhaust unit) 20 for discharging the gas in the chamber 4 from the lower part of the partition wall 18.
  • the FFU 19 is arranged above the partition wall 18 and is attached to the ceiling of the partition wall 18.
  • the FFU 19 sends clean air downward from the ceiling of the partition wall 18 into the chamber 4.
  • the exhaust duct 20 is connected to a cylindrical member 70 described later of the processing cup 13, and is connected to an exhaust device (exhaust unit) 14 provided in a factory where the substrate processing device 1 is installed.
  • the exhaust duct 20 guides the gas in the chamber 4 toward the exhaust device 14. Therefore, a downflow (downflow) flowing downward in the chamber 4 is formed by the FFU 19 and the exhaust duct 20.
  • the processing of the substrate W is performed in a state where a downflow is formed in the chamber 4.
  • the spin chuck 5 is a vacuum suction type chuck in this embodiment.
  • the spin chuck 5 attracts and supports the central portion of the lower surface of the substrate W (the back surface opposite to the front surface Wa).
  • the spin chuck 5 includes a lower spin shaft 21 extending in a vertical direction, a spin base 22 attached to the upper end of the lower spin shaft 21, and a spin base 22 that attracts and holds the lower surface of the substrate W in a horizontal posture. It includes a spin motor 23 having a rotation shaft coaxially coupled to the spin shaft 21.
  • the substrate W is placed on the spin base 22.
  • the spin base 22 includes a horizontal circular upper surface 22a having an outer diameter smaller than the outer diameter of the substrate W.
  • the center of the substrate W is arranged on the vertical rotation axis A1 passing through the center of the upper surface 22a of the spin base 22.
  • the spin base 22 contacts the central portion of the lower surface of the substrate W, it does not contact the outer peripheral portion of the lower surface of the substrate W. Therefore, in a state where the lower surface of the substrate W is attracted and held by the spin base 22, the outer peripheral portion of the substrate W protrudes outside the peripheral edge of the spin base 22.
  • the substrate W is rotated around the central axis of the lower spin shaft 21.
  • the blocking member 6 includes a blocking plate 26 and an upper spin shaft 27 rotatably provided on the blocking plate 26.
  • the blocking plate 26 includes a disc portion 28 held in a horizontal position.
  • a cylindrical through hole that vertically penetrates the blocking plate 26 and the upper spin shaft 27 is formed in the central portion of the disk portion 28.
  • the through hole includes a cylindrical inner peripheral surface that partitions the internal space.
  • the central nozzle 7 is inserted vertically through the through hole.
  • the blocking plate 26 (that is, the disk portion 28) has a disk shape having an outer diameter larger than the outer diameter of the substrate W.
  • a substrate facing surface 26a facing in the vertical direction is formed on the upper surface of the substrate W held by the spin chuck 5.
  • the substrate facing surface 26a is a flat surface parallel to the upper surface of the substrate W held by the spin chuck 5.
  • the central nozzle 7 extends in the vertical direction along a vertical axis passing through the center of the blocking plate 26 (disk portion 28) and the substrate W, that is, the rotation axis A1.
  • the central nozzle 7 is arranged above the spin chuck 5 and passes through the internal space of the blocking plate 26 and the upper spin shaft 27. The central nozzle 7 moves up and down together with the blocking plate 26 and the upper spin shaft 27.
  • the upper spin shaft 27 is supported by a support arm 31 extending horizontally above the blocking plate 26 so as to be relatively rotatable.
  • a blocking plate rotating unit 32 including an electric motor and the like is coupled to the blocking plate 26 and the upper spin shaft 27.
  • the cutoff plate rotating unit 32 rotates the cutoff plate 26 and the upper spin shaft 27 around the central axis coaxial with the rotation axis A1 with respect to the support arm 31.
  • the support arm 31 is coupled with a blocking member elevating unit 33 including an electric motor, a ball screw, and the like.
  • the blocking member elevating unit 33 raises and lowers the blocking member 6 (blocking plate 26 and upper spin shaft 27) and the central nozzle 7 in the vertical direction together with the support arm 31.
  • the blocking member elevating unit 33 displays the blocking plate 26 from a lower position (position shown by a broken line in FIG. 2) where the substrate facing surface 26a is held by the spin chuck 5 close to the upper surface of the substrate W and from the substrate facing surface 26a. It is moved up and down between the upper position (the position shown by the solid line in FIG. 2) where the vertical distance to the upper surface of the substrate W is larger than that in the lower position.
  • the blocking space is formed by a space between guards SP1 (first space, see FIG. 4B, etc.) and a space SP2 on the substrate (second space, see FIG. 4B, etc.), which will be described later.
  • the space SP2 on the substrate is a space between the substrate facing surface 26a of the blocking member 6 located at the lower position and the upper surface of the substrate W.
  • this cutoff space is not completely isolated from the space around it, the space SP2 on the substrate and the space SP1 between guards are the spaces in the chamber 4 communicating with them (hereinafter, "proximity space SP3" (hereinafter, “proximity space SP3"). There is almost no fluid flow to and from)).
  • the central nozzle 7 has a cylindrical casing 40 extending vertically, and a first nozzle pipe 41, a second nozzle pipe 46, a third nozzle pipe 51, and a fourth nozzle that vertically insert the inside of the casing 40, respectively. Includes piping 56 and. Each of the first to fourth nozzle pipes 41, 46, 51, 56 corresponds to an inner tube.
  • the lower end of the first nozzle pipe 41 opens to the lower end surface of the casing 40 to form the first discharge port (central discharge port) 41a.
  • the chemical solution from the chemical solution supply unit 8 is supplied to the first nozzle pipe 41.
  • the chemical liquid supply unit 8 includes a chemical liquid pipe 42 connected to the upstream end of the first nozzle pipe 41, a chemical liquid valve 43 interposed in the middle of the chemical liquid pipe 42, and a chemical liquid pipe 42.
  • a first flow rate adjusting valve 44 which changes the flow rate of the chemical liquid flowing through the pipe.
  • a chemical solution having a reduced amount of dissolved oxygen (low dissolved oxygen concentration) is supplied to the chemical solution pipe 42 from the chemical solution supply source.
  • the first flow rate adjusting valve 44 includes a valve body having a valve seat inside, a valve body that opens and closes the valve seat, and an actuator that moves the valve body between an open position and a closed position. It may be.
  • Other flow rate adjusting valves may have the same configuration.
  • the first flow rate adjusting valve 44 adjusts the discharge flow rate of the chemical solution from the first discharge port 41a.
  • the chemicals are hydrofluoric acid (dilute hydrofluoric acid), buffered hydrofluoric acid (Buffered HF: mixed solution of hydrofluoric acid and ammonium fluoride), FOM (ozone hydrofluoric acid), FPM (mixed solution of hydrogen peroxide solution of hydrofluoric acid), SC1 ( Ammonia hydrogen peroxide mixture), SC2 (hydrochloric acid hydrogen peroxide mixture), SPM (sulfuric acid / hydrogen peroxide mixture), polymer removal solution, and the like can be exemplified.
  • a chemical solution containing hydrofluoric acid (hydrofluoric acid, buffered hydrofluoric acid, FOM, FPM, etc.) is suitable as an etching solution for removing an oxide film (silicon oxide film).
  • the chemical solution containing hydrofluoric acid supplied to the chemical solution pipe 42 has a sufficient amount of dissolved oxygen in order to prevent the surface Wa of the substrate W from being oxidized by the oxygen in the hydrofluoric acid. It has been reduced to.
  • a chemical solution having a reduced amount of dissolved oxygen is supplied to the chemical solution pipe 42 from the chemical solution supply source.
  • the lower end of the second nozzle pipe 46 opens to the lower end surface of the casing 40 to form the second discharge port (central discharge port) 46a.
  • the rinse liquid from the rinse liquid supply unit 9 is supplied to the second nozzle pipe 46.
  • the rinse liquid supply unit 9 includes a rinse liquid pipe 47 connected to the upstream end of the second nozzle pipe 46 and a rinse liquid valve 48 interposed in the middle of the rinse liquid pipe 47.
  • a second flow rate adjusting valve 49 for changing the flow rate of the rinse liquid flowing through the rinse liquid pipe 47 is included.
  • the rinse liquid valve 48 is opened, the rinse liquid is discharged downward from the second discharge port 46a.
  • the rinse liquid valve 48 is closed, the discharge of the rinse liquid from the second discharge port 46a is stopped.
  • the second flow rate adjusting valve 49 adjusts the discharge flow rate of the rinse liquid from the second discharge port 46a.
  • the rinse solution is water.
  • the water is, for example, deionized water (DIW), but is not limited to DIW, and may be carbonated water, electrolytic ionized water, hydrogen water, ozone water, ammonia water, or hydrochloric acid water having a dilution concentration (for example, about 10 ppm to 100 ppm). It may be.
  • DIW deionized water
  • the dilution concentration for example, about 10 ppm to 100 ppm.
  • the lower end of the third nozzle pipe 51 opens to the lower end surface of the casing 40 to form a third discharge port (central discharge port) 51a.
  • the organic solvent from the organic solvent supply unit 10 is supplied to the third nozzle pipe 51.
  • the organic solvent supply unit 10 includes an organic solvent pipe 52 connected to the upstream end of the third nozzle pipe 51 and an organic solvent valve 53 interposed in the middle of the organic solvent pipe 52.
  • a third flow rate adjusting valve 54 for changing the flow rate of the organic solvent flowing through the organic solvent pipe 52 is included.
  • the organic solvent valve 53 When the organic solvent valve 53 is opened, the organic solvent is discharged downward from the third discharge port 51a.
  • the organic solvent valve 53 is closed, the discharge of the organic solvent from the third discharge port 51a is stopped.
  • the third flow rate adjusting valve 54 adjusts the discharge flow rate of the organic solvent from the third discharge port 51a.
  • the organic solvent supplied to the organic solvent pipe 52 is a solvent having a lower surface tension than water.
  • the organic solvent include alcohol and a mixed solution of a fluorine-based organic solvent and alcohol.
  • Alcohols include, for example, at least one of methyl alcohol, ethanol, propyl alcohol, and IPA.
  • the fluorinated organic solvent contains, for example, at least one of HFE (hydrofluoroether) and HFC (hydrofluorocarbon).
  • HFE hydrofluoroether
  • HFC hydrofluorocarbon
  • the lower end of the fourth nozzle pipe 56 opens to the lower end surface of the casing 40 to form the fourth discharge port (inert gas discharge port) 56a.
  • the inert gas from the inert gas supply unit 11 is supplied to the fourth nozzle pipe 56.
  • the inert gas supply unit 11 has an inert gas pipe 57 connected to the upstream end of the fourth nozzle pipe 56 and an inert gas pipe 57 interposed in the middle of the inert gas pipe 57. It includes a gas valve 58 and a fourth flow rate adjusting valve 59 that changes the flow rate of the inert gas flowing through the inert gas pipe 57.
  • the inert gas valve 58 When the inert gas valve 58 is opened, the inert gas is discharged (blowed out) downward from the fourth discharge port 56a.
  • the inert gas valve 58 is closed, the discharge of the inert gas from the fourth discharge port 56a is stopped.
  • the fourth flow rate adjusting valve 59 adjusts the discharge flow rate of the inert gas from the fourth discharge port 56a.
  • the inert gas is, for example, nitrogen gas, but may be argon gas or the like.
  • the processing cup 13 is arranged outside the substrate W held by the spin chuck 5 (in the direction away from the rotation axis A1).
  • the processing cup 13 captures the processing liquid (chemical solution, rinsing liquid, organic solvent, etc.) discharged from the substrate W held by the spin chuck 5 and sends it to the drainage facility according to the type of the treatment liquid.
  • the processing cup 13 sends the atmosphere on the substrate W held by the spin chuck 5 to the exhaust device 14 via the exhaust duct 20.
  • the processing cup 13 includes a cylindrical member 70, a plurality of cups (first cup 71, second cup 72, third cup 73) surrounding the spin chuck 5 inside the cylindrical member 70, and a substrate W.
  • Multiple guards first guard (inner guard) 74, second guard (outer guard) 75, third guard 76) that receive the treatment liquid scattered around (three in the example of FIG. 2)
  • a guard elevating unit 78 that elevates and elevates the guards of The processing cup 13 is arranged outside the outer circumference of the substrate W held by the spin chuck 5 (in the direction away from the rotation axis A1).
  • Each cup (first cup 71, second cup 72, third cup 73) has a cylindrical shape (annular shape) and surrounds the spin chuck 5.
  • the second cup 72 which is the second from the inside, is arranged outside the first cup 71
  • the third cup 73 which is the outermost, is arranged outside the second cup 72.
  • the third cup 73 is integrated with, for example, the second guard 75, and moves up and down together with the second guard 75.
  • Each cup (first cup 71, second cup 72, third cup 73) forms an annular groove that opens upward.
  • the first drainage pipe 79 is connected to the groove of the first cup 71.
  • the treatment liquid (mainly the rinse liquid) guided to the groove of the first cup 71 is sent to the drainage treatment equipment outside the substrate treatment apparatus 1 through the first drainage pipe 79 and processed in this drainage treatment equipment. Will be done.
  • the second drainage pipe 80 is connected to the groove of the second cup 72.
  • the treatment liquid (mainly the chemical liquid) guided to the groove of the second cup 72 is sent to the drainage treatment facility outside the substrate treatment device 1 through the second drainage pipe 80, and is treated in this drainage treatment facility.
  • a third drainage pipe 81 is connected to the groove of the third cup 73.
  • the treatment liquid (mainly an organic solvent) guided to the groove of the third cup 73 is sent to the drainage treatment equipment outside the substrate treatment apparatus 1 through the third drainage pipe 81 and processed in this drainage treatment equipment. Will be done.
  • the innermost first guard 74 surrounds the spin chuck 5 and has a shape substantially rotationally symmetric in plan view with respect to the rotation axis A1 (see FIG. 2) of the substrate W.
  • the first guard 74 includes a cylindrical lower end portion 83 that surrounds the circumference of the spin chuck 5, a cylindrical portion 84 that extends outward from the upper end of the lower end portion 83 (in a direction away from the rotation axis A1 of the substrate W), and a cylinder.
  • the first cylindrical portion 85 in the middle stage extending vertically upward from the outer peripheral portion of the upper surface of the shaped portion 84, and the annular first cylindrical portion extending inward (in the direction approaching the rotation axis A1 of the substrate W) from the upper end of the first cylindrical portion 85.
  • the guard tip portion 86 of 1 is included.
  • the lower end portion 83 is located on the groove of the first cup 71, and is housed inside the groove of the first cup 71 with the first guard 74 and the first cup 71 being closest to each other.
  • the inner peripheral end 74a (tip of the first guard tip portion 86) of the first guard 74 is a circular shape surrounding the substrate W held by the spin chuck 5 in a plan view.
  • the inner diameter of the inner peripheral end 74a of the first guard 74 is larger than the outer diameter of the substrate W.
  • the first guard tip portion 86 is an inclined portion extending obliquely upward from the upper end of the first cylindrical portion 85 inward. As shown in FIGS. 4A, 4B, etc., the cross-sectional shape of the first guard tip portion 86 is linear.
  • the second guard 75 which is the second from the inside, surrounds the spin chuck 5 on the outside of the first guard 74, and has a shape substantially rotationally symmetric with respect to the rotation axis A1 of the substrate W.
  • the second guard 75 has a second cylindrical portion 87 coaxial with the first guard 74, and a second guard 75 extending from the upper end of the second cylindrical portion 87 toward the center (direction approaching the rotation axis A1 of the substrate W). It has a guard tip portion 88 and.
  • the second cylindrical portion 87 is located on the groove of the second cup 72.
  • the second guard tip portion 88 is an inclined portion extending obliquely upward from the upper end of the second cylindrical portion 87 inward. As shown in FIGS.
  • the cross-sectional shape of the second guard tip portion 88 is linear.
  • the inner peripheral end 75a of the second guard 75 (the tip of the second guard tip 88) is a circular shape surrounding the substrate W held by the spin chuck 5 in a plan view.
  • the inner diameter of the inner peripheral end 75a of the second guard 75 is larger than the outer diameter of the substrate W.
  • the second guard tip portion 88 is arranged above the first guard tip portion 86 of the first guard 74, and overlaps the first guard tip portion 86 of the first guard 74 in a plan view.
  • the second guard tip 88 is formed so that the first guard 74 and the second guard 75 are closest to each other in the vertical direction without contacting the first guard tip 86. ing.
  • the outermost third guard 76 surrounds the spin chuck 5 on the outside of the second guard 75, and has a shape substantially rotationally symmetric in plan view with respect to the rotation axis A1 of the substrate W. ..
  • the third guard 76 includes a cylindrical portion 89 coaxial with the second guard 75, and a third guard tip portion 90 extending from the upper end of the cylindrical portion 89 toward the center (direction approaching the rotation axis A1 of the substrate W). have.
  • the cylindrical portion 89 is located on the groove of the third cup 73.
  • the inner peripheral end 76a (the tip of the third guard tip 90) of the third guard 76 is a circular shape surrounding the substrate W held by the spin chuck 5 in a plan view.
  • the inner diameter of the inner peripheral end 76a of the third guard 76 is larger than the outer diameter of the substrate W.
  • the third guard tip 90 is an inclined portion extending diagonally upward from the upper end of the cylindrical portion 89 inward. As shown in FIGS. 4A, 4B, etc., the cross-sectional shape of the third guard tip 90 is linear.
  • the third guard tip 90 is arranged above the second guard tip 88 of the second guard 75 and overlaps the second guard tip 88 of the second guard 75 in a plan view.
  • the third guard tip 90 is formed so that the second guard 75 and the third guard 76 are closest to each other in the vertical direction without contacting the second guard tip 88. ing.
  • each tip (first guard tip 86, second guard tip 88, third guard tip 90) are folded portions that are bent downward. It is defined by the inner peripheral edge of.
  • the processing cup 13 is foldable.
  • the processing cup 13 is unfolded and folded by the guard elevating unit 78 raising and lowering at least one of the three guards (first guard 74, second guard 75, and third guard 76).
  • the guard elevating unit 78 raises and lowers each guard (first guard 74, second guard 75, third guard 76) between the upper position and the lower position.
  • the guard elevating unit 78 can make each guard stationary at an arbitrary position within the range from the upper position to the lower position.
  • the upper position is a position where the inner peripheral end of the tip portion (first guard tip portion 86, second guard tip portion 88, third guard tip portion 90) is arranged above the upper surface of the substrate W.
  • the lower position is a position where the inner peripheral end of the tip portion is arranged below the upper surface of the substrate W.
  • the inner peripheral end 75a of the second guard 75 and the inner peripheral end 76a of the third guard 76 are located radially outward of the inner peripheral end 74a of the first guard 74. That is, the diameter D2 of the inner peripheral end 75a of the second guard 75 and the inner peripheral end 76a of the third guard 76 (see FIG. 4A) is the diameter D1 of the inner peripheral end 74a of the first guard 74 (see FIG. 4A). ) Is greater than (D2> D1). The difference between the diameter D2 and the diameter D1 is, for example, 10 mm.
  • the diameter D1 of the inner peripheral end 74a of the first guard 74 is smaller than the outer diameter (that is, the outer diameter of the blocking plate 26) D3 (see FIG. 4B) of the disk portion 28 of the blocking member 6.
  • first guard capture state a state in which the processing liquid discharged from the outer peripheral portion of the substrate W can be captured by the first guard 74 (a state shown in FIG. 8A described later. Hereinafter, this state is referred to as a “first guard capture state”). To achieve this, all three guards are placed in the upper position. In the first guard capture state, all of the processing liquid discharged from the outer peripheral portion of the rotating substrate W is received (captured) by the first guard 74.
  • a state in which the processing liquid discharged from the outer peripheral portion of the substrate W can be captured by the third guard 76 (a state shown in FIG. 8C described later. Hereinafter, this state is referred to as a “third guard capture state”).
  • this state is referred to as a “third guard capture state”.
  • the first guard 74 and the second guard 75 are placed in the lower position, and the third guard 76 is placed in the upper position.
  • the third guard capture state all of the processing liquid discharged from the outer peripheral portion of the rotating substrate W is received (captured) by the third guard 76.
  • the second guard 75 In the second guard capture state shown in FIG. 4B, all of the processing liquid discharged from the outer peripheral portion of the rotating substrate W is received (captured) by the second guard 75.
  • the second guard 75 and the third guard 76 are located in the upper position.
  • the first guard 74 is not at the lower position but at a position facing the peripheral end surface above the lower position and below the upper position (the position of the first guard 74 shown in FIG. 4B and FIG. 8A described later). positioned.
  • the peripheral end surface facing position is a position where the upper end of the first guard 74 is arranged above the lower end of the spin base 22.
  • the peripheral end surface facing position may be a position where the upper end of the first guard 74 is arranged at the same height as the upper surface of the substrate W, or the upper end of the first guard 74 is the upper surface of the substrate W and the substrate W. It may be a position arranged at a height between the lower surface and the lower surface.
  • an inter-guard space (first space) SP1 is formed between the first guard 74 and the second guard 75.
  • the inter-guard space SP1 surrounds the space on the substrate (second space) SP2, which is the space between the surface facing the substrate 26a and the upper surface (surface Wa) of the substrate W, and communicates with the space SP2 on the substrate. ..
  • the processing liquid discharged from the outer peripheral portion of the substrate W held by the spin chuck 5 enters the inter-guard space SP1 and is received by the inner wall of the second guard 75. Be done.
  • the inner peripheral end 74a of the first guard tip portion 86 is horizontal to the peripheral end surface Wc of the substrate W with the first annular gap C1 in between.
  • the inner peripheral end 75a of the second guard tip portion 88 faces the outer peripheral end 28c of the disc portion 28 of the blocking member 6 across the second annular gap C2.
  • the distance L1 means the distance in the radial direction of the substrate W (horizontal direction orthogonal to the rotation axis A1 of the substrate W) from the peripheral end surface Wc of the substrate W to the inner peripheral end 74a of the first guard tip portion 86.
  • the distance L2 means the radial distance of the substrate W from the outer peripheral end 28c of the disc portion 28 of the blocking member 6 to the inner peripheral end 75a of the second guard tip portion 88.
  • the flow path width WF in the exhaust path EP described later is , The total gap distance (L1 + L2) or less (WF ⁇ (L1 + L2)).
  • the inner peripheral end 74a of the first guard 74 is located inward in the radial direction of the substrate W with respect to the outer peripheral end 28c of the disk portion 28 of the blocking member 6. Therefore, it is possible to move the second annular gap C2 from the outer peripheral end 28c of the substrate W outward in the radial direction of the substrate W.
  • An opening 70a (see FIG. 2) is formed on the side wall of the cylindrical member 70 of the processing cup 13, and an exhaust duct 20 (see FIG. 2) is connected to the opening 70a.
  • the suction force of the exhaust device 14 is constantly transmitted to the opening 70a via the exhaust duct 20. Therefore, the opening 70a is always in a depressurized state.
  • an exhaust path EP communicating with the inter-guard space SP1 is formed between the first guard 74 and the second guard 75.
  • the exhaust path EP includes a narrow flow path P1 partitioned by a first cylindrical portion 85 and a second cylindrical portion 87, and an outer wall 72a of the second cylindrical portion 87 and the second cup 72.
  • the flow path width WF of the exhaust path EP means the minimum value of the distance of the exhaust path EP in the radial direction of the substrate W.
  • the narrow flow path P1 is the narrowest, so that the flow path width of the narrow flow path P1 (the radial distance of the substrate W of the narrow flow path P1) corresponds to the flow path width WF of the exhaust path EP.
  • the exhaust gas discharged from between the second cup 72 and the third cup 73 into the internal space of the cylindrical member 70 is taken into the exhaust duct 20 through the opening 70a.
  • the atmosphere above the substrate W (the atmosphere of the space SP2 on the substrate) is sucked into the exhaust duct 20 and the exhaust device 14 through the inter-guard space SP1 and the exhaust path EP. Further, the exhaust duct 20 and the exhaust device 14 suck not only the atmosphere above the substrate W (the atmosphere of the space SP2 on the substrate) but also the atmosphere inside the chamber 4. Specifically, the atmosphere inside the chamber 4 is taken into the inside of the cylindrical member 70 by the exhaust of the opening 70a by the exhaust duct 20. The atmosphere taken into the inside of the cylindrical member 70 is sent to the exhaust device 14 through the opening 70a and the exhaust duct 20.
  • the exhaust duct 20 and the exhaust device 14 suck both the atmosphere of the space SP1 between guards and the space SP2 on the substrate and the atmosphere outside the processing cup 13 and inside the chamber 4.
  • the blocking member 6 is arranged at the lower position when the processing cup 13 is in the second guard capture state.
  • the vertical distance from the upper surface of the substrate W to the substrate facing surface 26a of the blocking member 6 is a predetermined interval WU.
  • This interval WU is equal to or greater than the total clearance distance (L1 + L2) (WU ⁇ (L1 + L2)).
  • the total gap distance (L1 + L2) is equal to or greater than the flow path width WF in the exhaust path EP and equal to or less than the distance WU between the substrate facing surface 26a and the upper surface of the substrate W (WF ⁇ (L1 + L2) ⁇ WU).
  • FIG. 5 is a block diagram for explaining the electrical configuration of the main part of the substrate processing device 1.
  • the control device 3 is configured by using, for example, a microcomputer.
  • the control device 3 has an arithmetic unit such as a CPU, a fixed memory device, a storage unit such as a hard disk drive, and an input / output unit.
  • the storage unit stores the program executed by the arithmetic unit.
  • control device 3 is connected to the spin motor 23, the blocking member elevating unit 33, the blocking plate rotating unit 32, the guard elevating unit 78, and the like as control targets.
  • the control device 3 controls the operations of the spin motor 23, the blocking member elevating unit 33, the blocking plate rotating unit 32, the guard elevating unit 78, and the like according to a predetermined program.
  • control device 3 opens and closes the chemical solution valve 43, the rinse solution valve 48, the organic solvent valve 53, the inert gas valve 58, etc. according to a predetermined program.
  • control device 3 adjusts the opening degree of the first flow rate adjusting valve 44, the second flow rate adjusting valve 49, the third flow rate adjusting valve 54, the fourth flow rate adjusting valve 59, etc. according to a predetermined program. adjust.
  • FIG. 6 is an enlarged cross-sectional view showing the surface Wa of the substrate W processed by the substrate processing apparatus 1.
  • the substrate W to be processed is, for example, a silicon wafer, and the pattern 100 is formed on the surface Wa which is the pattern forming surface thereof.
  • the pattern 100 is, for example, a fine pattern.
  • the pattern 100 may be a structure in which structures 101 having a convex shape (columnar shape) are arranged in a matrix.
  • the line width W1 of the structure 101 is provided, for example, about 10 nanometers to 45 nanometers
  • the gap W2 of the pattern 100 is provided, for example, about 10 nanometers to several micrometers.
  • the film thickness T of the pattern 100 is, for example, about 1 micrometer.
  • the aspect ratio (ratio of the film thickness T to the line width W1) may be, for example, about 5 to 500 (typically, about 5 to 50).
  • the pattern 100 may be a pattern in which line-shaped patterns formed by fine trenches are repeatedly arranged. Further, the pattern 100 may be formed by providing a plurality of fine holes (voids or pores) in the thin film.
  • the pattern 100 includes, for example, an insulating film. Further, the pattern 100 may include a conductor film. More specifically, the pattern 100 is formed by a laminated film in which a plurality of films are laminated, and may further include an insulating film and a conductor film. The pattern 100 may be a pattern composed of a monolayer film.
  • the insulating film may be a silicon oxide film (SiO 2 film) or a silicon nitride film (SiN film).
  • the conductor film may be an amorphous silicon film into which impurities for lowering the resistance are introduced, or may be a metal film (for example, a metal wiring film).
  • the pattern 100 may be a hydrophilic film.
  • a hydrophilic film a TEOS film (a type of silicon oxide film) can be exemplified.
  • FIG. 7 is a flow chart for explaining the contents of a substrate processing example executed in the processing unit 2.
  • 8A to 8C are schematic views for explaining the substrate processing example.
  • the substrate processing example will be described with reference to FIGS. 1 to 7. 8A to 8C will be referred to as appropriate.
  • the unprocessed substrate W (for example, a circular substrate having a diameter of 300 mm) is carried into the processing unit 2 from the substrate container C by the indexer robot IR and the transfer robot CR, and is carried into the chamber 4 (S1 in FIG. 7). ).
  • the carried-in substrate W is delivered to the spin chuck 5 with its surface Wa facing upward. After that, the central portion of the lower surface of the substrate W is attracted and supported, so that the substrate W is held by the spin chuck 5.
  • the substrate W is carried into the chamber 4 in a state where all the guards are arranged at the lower position (the guards are not opposed to each other as shown in FIG. 4A) and the blocking member 6 is retracted to the upper position.
  • the control device 3 controls the blocking member elevating unit 33 to lower the blocking member 6 and arranges the blocking member 6 at a lower position as shown in FIG. 8A (FIG. 7).
  • S2 Breaking member lowering. Breaking member facing process).
  • the space SP2 on the substrate is formed between the substrate facing surface 26a and the upper surface of the substrate W.
  • the control device 3 controls the spin motor 23 to increase the rotation speed of the spin base 22 to a predetermined liquid treatment speed (within a range of 10 to 1200 rpm, for example, 1000 rpm) and maintain the liquid treatment speed.
  • a predetermined liquid treatment speed (within a range of 10 to 1200 rpm, for example, 1000 rpm) and maintain the liquid treatment speed.
  • S3 in FIG. 7 Substrate W rotation start). Since the substrate W is held by the spin base 22, when the spin base 22 rotates at the liquid processing speed, the substrate W also rotates around the rotation axis A1 at the liquid processing speed.
  • control device 3 controls the blocking plate rotating unit 32 to synchronize the blocking plate 26 with the rotation of the substrate W (that is, in the same rotation direction and the same rotation speed as the rotation of the substrate W), and to rotate the axis. Rotate around A1.
  • control device 3 controls the guard elevating unit 78 to raise the second guard 75 and the third guard 76 to the upper position, and raises the first guard 74 to the peripheral end surface facing position (FIG. 4B). Place at the indicated position).
  • the processing cup 13 switches from the guard non-opposing state shown in FIG. 4A to the second guard capturing state shown in FIG. 4B.
  • the inner peripheral end 74a of the first guard tip portion 86 is horizontally opposed to the peripheral end surface Wc of the substrate W, and the inner peripheral edge of the second guard tip portion 88 is opposed to the outer peripheral end 28c of the disk portion 28.
  • the ends 75a face each other horizontally (guard facing step).
  • the inter-guard space SP1 communicating with the space SP2 on the substrate is provided adjacent to the outside of the space SP2 on the substrate.
  • the control device 3 opens the inert gas valve 58.
  • the inert gas is discharged downward from the fourth discharge port 56a of the central nozzle 7 (fourth nozzle pipe 56) (that is, toward the central portion of the upper surface of the substrate W). Will be done.
  • the flow rate of the inert gas discharged from the fourth discharge port 56a is adjusted to, for example, 100 (liters / minute) by the fourth flow rate adjusting valve 59.
  • the inert gas discharged from the fourth discharge port 56a spreads the space SP2 on the substrate between the upper surface of the substrate W and the substrate facing surface 26a of the blocking member 6 along the upper surface of the substrate W.
  • the atmosphere of the space SP2 on the substrate is replaced with the inert gas, and the oxygen concentration in the atmosphere of the space SP2 on the substrate decreases.
  • the flow rate of the exhaust gas sucked into the exhaust duct 20 through the exhaust path EP shown in FIG. 4B is the flow path of the exhaust path EP formed in the suction force of the exhaust device 14 and the second guard capture state of the processing cup 13. It is determined by a plurality of exhaust conditions including the width WF.
  • the flow rate of the inert gas discharged from the fourth discharge port 56a of the central nozzle 7 is larger than the flow rate of the exhaust gas sucked into the exhaust duct 20 through the exhaust path EP. That is, the inert gas having a flow rate larger than the flow rate of the exhaust gas discharged from the exhaust path EP is supplied to the space SP2 on the substrate.
  • the control device 3 starts a chemical solution treatment step (S4 in FIG. 7) for treating the surface Wa of the substrate W using hydrofluoric acid as an example of the chemical solution.
  • the control device 3 opens the chemical solution valve 43.
  • hydrofluoric acid is discharged from the first discharge port 41a of the central nozzle 7 (first nozzle pipe 41) toward the central portion of the upper surface (surface Wa) of the rotating substrate W (chemical solution supply step). ).
  • the discharge flow rate of hydrofluoric acid at this time is, for example, 2 (liters / minute).
  • As the hydrofluoric acid supplied to the upper surface of the substrate W one having a sufficiently reduced amount of dissolved oxygen is used.
  • Hydrofluoric acid supplied to the upper surface of the substrate W receives centrifugal force due to the rotation of the substrate W and moves to the outer peripheral portion of the substrate W.
  • a hydrofluoric acid liquid film LF1 that covers the entire upper surface of the substrate W is formed. That is, the upper surface of the substrate W is covered with hydrofluoric acid, and the entire upper surface of the substrate W is covered with the hydrofluoric acid liquid film LF1.
  • the hydrofluoric acid contained in the liquid film LF1 of hydrofluoric acid comes into contact with the surface Wa of the substrate W, so that the surface Wa is treated with hydrofluoric acid.
  • the natural oxide film (silicon oxide film) formed on the surface Wa is removed by hydrofluoric acid.
  • Hydrofluoric acid that has moved to the outer peripheral portion of the substrate W scatters from the outer peripheral portion of the substrate W toward the side of the substrate W.
  • the hydrofluoric acid scattered from the substrate W is received by the inner wall of the second guard 75, flows down along the inner wall of the second guard 75, and flows down through the second cup 72 and the second drainage pipe 80. It is sent to the wastewater treatment facility outside the substrate treatment device 1.
  • the inert gas is continuously supplied at the above flow rate.
  • both the space SP1 between the guards and the space SP2 on the substrate have positive pressure (the air pressure outside the processing cup 13 and higher than the air pressure in the space inside the chamber 4). ) (Positive pressure maintenance process).
  • the control device 3 supplies the inert gas to the space SP2 on the substrate, both the space SP1 between the guards and the space SP2 on the substrate have positive pressure (the air pressure outside the processing cup 13 and higher than the air pressure in the space inside the chamber 4). ) (Positive pressure maintenance process).
  • the oxygen-containing atmosphere in the proximity space SP3 from entering the space SP2 on the substrate through the first annular gap C1 and the second annular gap C2.
  • the space SP2 on the substrate can be maintained in a low oxygen environment.
  • the surface Wa of the substrate W is treated with hydrofluoric acid while the space SP1 between guards and the space SP2 on the substrate are maintained at a positive pressure by the supply of the inert gas.
  • the treatment using hydrofluoric acid can be applied to the substrate W in a low oxygen environment.
  • the oxide film is removed from the surface Wa of the substrate W, which is the pattern forming surface. If the oxygen concentration in the atmosphere in contact with the substrate W is high, the thickness of the oxide film increases or a new oxide film is formed. These oxide films are removed by the chemical solution. Therefore, if the oxygen concentration in the atmosphere in contact with the substrate W is high, the pattern 100 may be weakened.
  • the oxidation of the surface Wa in the chemical solution treatment step (S4 of FIG. 7) can be suppressed or prevented.
  • the pattern 100 associated with the oxidation of the surface Wa of the substrate W can suppress or prevent weakening.
  • the control device 3 closes the chemical solution valve 43 and stops the discharge of hydrofluoric acid from the central nozzle 7 (first nozzle pipe 41). As a result, the chemical solution treatment step (S4 in FIG. 7) is completed.
  • the control device 3 executes a rinsing step (S5 in FIG. 7) for replacing the hydrofluoric acid on the substrate W with a rinsing solution to remove the hydrofluoric acid from the substrate W.
  • the control device 3 controls the guard elevating unit 78 to raise the first guard 74 of the processing cup 13 in the second guard capture state from the position facing the peripheral end surface, whereby FIG. 8B As shown in the above, the inner peripheral end 74a (see FIG. 4B) of the first guard tip portion 86 is positioned above the upper surface of the substrate W (the first guard capture state is realized).
  • the control device 3 opens the rinse liquid valve 48 while maintaining the rotation speeds of the substrate W and the blocking plate 26 at the liquid processing speed.
  • the rinse liquid is discharged from the second discharge port 46a of the central nozzle 7 (second nozzle pipe 46) toward the central portion of the upper surface of the rotating substrate W.
  • the rinse liquid supplied to the central portion of the upper surface of the substrate W receives the centrifugal force due to the rotation of the substrate W and moves to the outer peripheral portion of the substrate W.
  • a liquid film LF2 of a rinse liquid that covers the entire upper surface of the substrate W is formed.
  • the rinse liquid that has moved to the outer peripheral portion of the substrate W scatters from the outer peripheral portion of the substrate W toward the side of the substrate W.
  • the rinse liquid scattered from the substrate W is received by the inner wall of the first guard 74 horizontally opposed to the peripheral end surface Wc of the substrate W, flows down along the inner wall of the first guard 74, and flows down to the first cup 71 and It is sent to the drainage treatment facility outside the substrate treatment apparatus 1 via the first drainage pipe 79.
  • the control device 3 continues to discharge the rinse liquid while the entire upper surface of the substrate W is covered with the rinse liquid, and the spin motor 23 and the blocking plate
  • the rotation unit 32 is controlled to gradually reduce the rotation speed of the substrate W and the blocking plate 26 from the liquid processing speed to the paddle speed (zero or a low rotation speed of 40 rpm or less. In this substrate processing example, for example, 10 rpm).
  • the control device 3 maintains the rotation speed of the substrate W at the paddle speed (paddle rinsing step (S6 in FIG. 7)).
  • the liquid film LF2 of the rinse liquid covering the entire area is supported on the upper surface of the substrate W in a paddle shape.
  • the centrifugal force acting on the liquid film LF2 of the rinse liquid is smaller than the surface tension acting between the rinse liquid and the upper surface of the substrate W, or the centrifugal force and the surface tension are substantially antagonistic. doing. Due to the deceleration of the substrate W, the centrifugal force acting on the rinse liquid on the substrate W weakens, and the amount of the rinse liquid discharged from the substrate W decreases. As a result, the thickness of the liquid film LF2 of the rinse liquid held on the upper surface of the substrate W is increased.
  • the control device 3 closes the rinse liquid valve 48 while maintaining the rotation of the substrate W at the paddle speed, and the central nozzle 7 (second). The discharge of the rinse liquid from the nozzle pipe 46) of the above is stopped.
  • the control device 3 starts the replacement step (S7 in FIG. 7). Specifically, the control device 3 opens the organic solvent valve 53 while maintaining the rotation speed of the substrate W at the paddle speed. As a result, IPA as an example of the organic solvent is discharged from the third discharge port 51a of the central nozzle 7 (third nozzle pipe 51) toward the central portion of the upper surface of the rotating substrate W. As a result, the rinse liquid contained in the liquid film LF2 of the rinse liquid is sequentially replaced with IPA. As a result, the IPA liquid film LF3 that covers the entire upper surface of the substrate W is held in a paddle shape.
  • the control device 3 controls the guard elevating unit 78 to enter the first guard capture state.
  • the inner wall of the third guard 76 is made horizontal to the peripheral end surface Wc of the substrate W as shown in FIG. 8C. Face each other (realize the third guard capture state).
  • IPA is discharged from the outer peripheral portion of the substrate W.
  • the IPA discharged from the outer peripheral portion of the substrate W is received by the inner wall of the third guard 76, flows down along the inner wall of the third guard 76, and runs through the third cup 73 and the third drainage pipe 81. It is sent to the drainage treatment facility outside the substrate processing device 1 via the substrate processing device 1.
  • control device 3 keeps the state of the processing cup 13 in the third guard capture state, arranges the blocking member 6 at the lower position, and continues to discharge the inert gas from the central nozzle 7. Then, the control device 3 controls the spin motor 23 and the blocking plate rotation unit 32 to increase the rotation speed of the substrate W and the blocking plate 26 to the drying rotation speed (for example, several thousand rpm), and the substrate at the drying rotation speed. The W and the blocking plate 26 are rotated. As a result, a large centrifugal force is applied to the liquid on the substrate W, and the liquid adhering to the substrate W is shaken off around the substrate W.
  • the control device 3 controls the spin motor 23 to stop the rotation of the substrate W by the spin chuck 5 (S9 in FIG. 7). Further, the control device 3 controls the blocking plate rotating unit 32 to stop the rotation of the blocking plate 26. After that, the control device 3 controls the blocking member elevating unit 33 to raise the blocking member 6 and retract it to the upper position.
  • the substrate W is carried out from the chamber 4 (S10 in FIG. 7).
  • the control device 3 causes the hand of the transfer robot CR to enter the inside of the chamber 4.
  • the control device 3 releases the adsorption of the substrate W by the spin chuck 5.
  • the control device 3 causes the hand of the transfer robot CR to hold the substrate W whose suction has been released.
  • the control device 3 retracts the hand of the transfer robot CR from the chamber 4.
  • the carried-out board W is passed from the transfer robot CR to the indexer robot IR, and is housed in the board container C by the indexer robot IR.
  • the blocking member 6 is arranged at the lower position. That is, the blocking member 6 is made to face the upper surface of the substrate W held by the spin chuck 5 while maintaining the distance between the substrate facing surface 26a and the upper surface of the substrate W at a predetermined interval WU. Further, the inner peripheral end 74a of the first guard tip 86 is horizontally opposed to the peripheral end surface Wc of the substrate W across the first annular gap C1, and the inner peripheral end 75a of the second guard tip 88 is the second. It is horizontally opposed to the outer peripheral end 28c of the disk portion 28 of the blocking member 6 with the annular gap C2 of 2 separated.
  • the inter-guard space SP1 between the first guard 74 and the second guard 75 is arranged around the space SP2 on the substrate, which is the space between the substrate facing surface 26a and the upper surface of the substrate W. It communicates with the space SP2 on the board.
  • both the space SP1 between guards and the space SP2 on the substrate are kept at positive pressure.
  • the atmosphere containing oxygen in the proximity space SP3 communicating with the inter-guard space SP1 and the space SP2 on the substrate passes through the two annular gaps (first annular gap C1 and second annular gap C2) on the substrate. It is possible to effectively suppress the entry into the space SP2. As a result, the space SP2 on the substrate can be maintained in a low oxygen environment.
  • the surface Wa of the substrate W is treated with a chemical solution (chemical solution containing hydrofluoric acid) while the space SP1 between guards and the space SP2 on the substrate are maintained at positive pressure by the supply of the inert gas.
  • a chemical solution chemical solution containing hydrofluoric acid
  • the treatment using the chemical solution can be applied to the surface Wa of the substrate W in a low oxygen environment.
  • the spin chuck 5 (vacuum chuck) supports the central portion of the substrate W instead of the outer peripheral portion of the substrate W
  • the surface Wa of the substrate W is treated with a chemical solution (hydrofluoric acid) in a low oxygen environment. Can be applied.
  • the flow path width WF in the exhaust path EP is equal to or less than the total gap distance (L1 + L2), which is the sum of the distance L1 of the first annular gap C1 and the distance L2 of the second annular gap C2.
  • the total gap distance (L1 + L2) is equal to or larger than the flow path width WF in the exhaust path EP, the atmosphere of the space SP2 on the substrate in the positive pressure state makes the first annular gap C1 and the second annular gap C2. It easily flows out to the approach space SP3 through it. Thereby, it is possible to suppress or prevent the atmosphere in the proximity space SP3 from entering the space SP2 on the substrate through these two annular gaps (first annular gap C1 and second annular gap C2).
  • the total clearance distance (L1 + L2) is equal to or less than the distance WU between the substrate facing surface 26a of the blocking member 6 located at the lower position and the upper surface of the substrate W. Therefore, each of the two annular gaps (the first annular gap C1 and the second annular gap C2) is narrow. As a result, it is even more effective that the oxygen-containing atmosphere in the proximity space SP3 enters the space SP2 on the substrate through these two annular gaps (first annular gap C1 and second annular gap C2). Can be suppressed or prevented. As a result, the space SP2 on the substrate can be maintained in a low oxygen environment.
  • the exhaust duct 20 and the exhaust device 14 suck not only the atmosphere of the space SP1 between guards and the space SP2 on the substrate, but also the atmosphere of the space outside the processing cup 13 and inside the chamber 4. Since it is necessary to stabilize the air flow in the chamber 4, the exhaust force of the exhaust device 14 cannot be excessively increased.
  • the exhaust device 14 is a shared exhaust source shared by the factory where the substrate processing device 1 is installed, strong exhaust capable of achieving sufficient exhaust of the processing cup 13 due to the limitation due to the exhaust force that can be prepared at the factory. It may be difficult to secure power.
  • the inter-guard space SP1 and the space SP2 on the substrate can be relatively easily maintained at positive pressure without exhausting using a strong exhaust force. Can be done.
  • the second annular gap C2 is formed on the peripheral end surface of the substrate W. It is possible to keep away from Wc. If the peripheral end surface Wc of the substrate W is close to the second annular gap C2, when an atmosphere containing oxygen enters the space SP2 on the substrate through the second annular gap C2, the atmosphere causes the surface of the substrate W to enter.
  • the outer peripheral portion of Wa may be oxidized.
  • the second annular gap C2 is kept away from the peripheral end surface Wc of the substrate W, in the unlikely event that an atmosphere containing oxygen enters the space SP2 on the substrate through the second annular gap C2. However, it is possible to suppress or prevent oxidation of the outer peripheral portion of the surface Wa of the substrate W.
  • the first guard 74 and the second guard 75 may be arranged at the intermediate position shown by the broken line in FIG. 8C instead of the lower position. In this case, it is possible to prevent an atmosphere containing oxygen from entering the space between the substrate W and the blocking member 6.
  • the intermediate position is the position between the upper position and the lower position.
  • the intermediate position is a position where the inner peripheral end 74a of the first guard 74 is arranged above the lower end of the spin base 22 and the inner peripheral end 75a of the second guard 75 is arranged below the upper surface of the substrate W. It may be.
  • the blocking member 6 may be arranged at a lower position in the chemical solution treatment step (S4 in FIG. 7), the subsequent rinsing step (S5 in FIG. 7) and the paddle rinsing step (FIG. 7). In S6) and the replacement step (S7 in FIG. 7), the blocking member 6 may be arranged at the upper position.
  • a rinsing liquid or an organic solvent may be supplied by using a nozzle different from the central nozzle 7 (for example, a scan nozzle that can move along the upper surface of the substrate W).
  • the inner diameter of the inner peripheral end 74a of the first guard 74 is equal to the inner diameter of the inner peripheral end 75a of the second guard 75, and is equal to the inner diameter of the inner peripheral end 76a of the third guard 76. You may.
  • the inner diameter of the inner peripheral end 74a of the first guard 74 is larger than the outer diameter (that is, the outer diameter of the blocking plate 26) D3 of the disk portion 28 of the blocking member 6.
  • the outer diameter D3 of the disk portion 28 of the blocking member 6 is equal to or substantially equal to the outer diameter of the substrate W held by the spin chuck 5.
  • the flow path (narrow flow path P1) partitioned by the first cylindrical portion 85 and the second cylindrical portion 87 is the narrowest portion of the exhaust path EP, and the narrow flow path P1 is in the horizontal direction.
  • the interval was the flow path width WF of the exhaust path EP, but a part of the exhaust path EP other than the narrow flow path P1 may be the narrowest part of the exhaust path EP.
  • the first guard tip 86 is second so that the vertical distance between the first guard tip 86 and the second guard tip 88 is kept constant. It may be connected to the guard 75 of.
  • FIG. 10A shows a second guard capture state in which the treatment liquid discharged from the substrate W is captured by the second guard tip portion 88.
  • FIG. 10B shows a first guard capture state in which the treatment liquid discharged from the substrate W is captured by the first guard tip portion 86.
  • the first guard is integrated with the second guard. Specifically, from the processing cup 13 shown in FIG. 4A or the like, the first cup 71 and the first guard 74 are abolished, and only the first guard tip portion 86 of the first guard 74 is the second guard. It is provided below the tip portion 88, and the first guard tip portion 86 is coupled (integrated) to the middle portion (midway portion in the vertical direction) of the second cylindrical portion 87.
  • a through hole 201 is formed at the root portion (outer peripheral portion) of the first guard tip portion 86 to guide the treatment liquid received by the second guard tip portion 88 toward the second cylindrical portion 87. ..
  • an annular exhaust flow rate adjusting ring 301 that changes the flow path width WF of the exhaust path EP according to the distance between the first guard 74 and the second guard 75 in the vertical direction is provided. It may be provided in the exhaust path EP.
  • the exhaust flow rate adjusting ring 301 moves up and down together with the second guard 75.
  • the flow path width WF of the exhaust path EP can be adjusted when the processing cup 13 is in the second guard capture state.
  • the blocking member 6 is arranged lower than that shown in FIG. 11A, and the second guard 75 is arranged lower so that the flow path width WF is smaller than that shown in FIG. 11A.
  • the first guard 74 and the exhaust flow rate adjusting ring 301 demarcate the narrowest portion of the exhaust path EP.
  • the pressure loss of the exhaust path EP is increased and the exhaust flow rate of the exhaust path EP is reduced. That is, the exhaust flow rate of the exhaust path EP can be increased or decreased simply by changing the position of the exhaust flow rate adjusting ring 301.
  • the exhaust flow rate adjusting ring 301 may be provided on the first guard 74 so as to be able to move up and down.
  • the relative positional relationship between the blocking member 6 and the spin chuck 5 in the vertical direction is changed by raising and lowering the blocking member 6
  • both the blocking member 6 and the spin chuck 5 have been described.
  • the relative positional relationship between the blocking member 6 and the spin chuck 5 in the vertical direction may be changed by raising and lowering only the spin chuck 5.
  • the cross-sectional shape of the guard tip portion (first guard tip portion 86, second guard tip portion 88, third guard tip portion 90) of each guard of the processing cup 13 is, for example, a smooth upward convex arc. You may.
  • the inter-guard space SP1 may not be partitioned by the first guard 74 and the second guard 75, but may be partitioned by the second guard 75 and the third guard 76.
  • the processing cup 13 may be a two-stage cup as long as it has an inner guard and an outer guard. It may be a multi-stage cup with more than one stage.
  • the spin chuck 5 is not limited to the vacuum chuck, and may be a Bernoulli chuck that fixes the substrate W to the spin base 22 by generating an attractive force that attracts the substrate W to the upper surface of the spin base 22 according to Bernoulli's theorem. It may be an electrostatic chuck that electrostatically attracts the substrate W to the upper surface of the spin base 22.
  • Substrate processing device 2 Processing unit 3: Control device 4: Chamber 5: Spin chuck (board holding unit) 6: Breaking member 8: Chemical solution supply unit 11: Inert gas supply unit 13: Processing cup 14: Exhaust device (exhaust unit) 20: Exhaust duct (exhaust unit) 26: Blocking plate 26a: Substrate facing surface 28: Disk portion 28c: Outer peripheral end 74: First guard (inner guard) 74a: Inner peripheral end 75: Second guard (outer guard) 75a: Inner peripheral end 85: First cylindrical portion 86: First guard tip portion 87: Second cylindrical portion 88: Second guard tip portion A1: Rotation axis (vertical line) C1: First annular gap C2: Second annular gap EP: Exhaust path L1: Distance (distance of the first annular gap) L2: Distance (distance of the second annular gap) SP1: Space between guards (first space) SP2: Space on the board (second space) Wa: Surface Wc: Peripheral

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  • General Physics & Mathematics (AREA)
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PCT/JP2020/021121 2019-06-28 2020-05-28 基板処理装置および基板処理方法 WO2020261868A1 (ja)

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Publication number Priority date Publication date Assignee Title
JP2002176026A (ja) * 2000-12-05 2002-06-21 Ses Co Ltd 枚葉式基板洗浄方法および枚葉式基板洗浄装置
JP2011061034A (ja) * 2009-09-10 2011-03-24 Dainippon Screen Mfg Co Ltd 基板処理装置
WO2015146635A1 (ja) * 2014-03-28 2015-10-01 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP2016157802A (ja) * 2015-02-24 2016-09-01 東京エレクトロン株式会社 基板処理装置、基板処理方法および基板処理方法を実行させるプログラムが記録された記憶媒体
JP2017183552A (ja) * 2016-03-30 2017-10-05 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP2019046892A (ja) * 2017-08-31 2019-03-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置

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JPS6330998Y2 (zh) 1980-04-24 1988-08-18
JP6688112B2 (ja) * 2016-03-18 2020-04-28 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置

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Publication number Priority date Publication date Assignee Title
JP2002176026A (ja) * 2000-12-05 2002-06-21 Ses Co Ltd 枚葉式基板洗浄方法および枚葉式基板洗浄装置
JP2011061034A (ja) * 2009-09-10 2011-03-24 Dainippon Screen Mfg Co Ltd 基板処理装置
WO2015146635A1 (ja) * 2014-03-28 2015-10-01 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP2016157802A (ja) * 2015-02-24 2016-09-01 東京エレクトロン株式会社 基板処理装置、基板処理方法および基板処理方法を実行させるプログラムが記録された記憶媒体
JP2017183552A (ja) * 2016-03-30 2017-10-05 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP2019046892A (ja) * 2017-08-31 2019-03-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置

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