WO2020248987A1 - 光电功能晶体m 3re(po 4) 3及其制备方法与应用 - Google Patents

光电功能晶体m 3re(po 4) 3及其制备方法与应用 Download PDF

Info

Publication number
WO2020248987A1
WO2020248987A1 PCT/CN2020/095244 CN2020095244W WO2020248987A1 WO 2020248987 A1 WO2020248987 A1 WO 2020248987A1 CN 2020095244 W CN2020095244 W CN 2020095244W WO 2020248987 A1 WO2020248987 A1 WO 2020248987A1
Authority
WO
WIPO (PCT)
Prior art keywords
crystal
temperature
melt
strontium phosphate
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2020/095244
Other languages
English (en)
French (fr)
Inventor
于法鹏
武广达
樊梦迪
李妍璐
程秀凤
赵显�
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shandong University
Original Assignee
Shandong University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CN201910517507.7A external-priority patent/CN110079861B/zh
Priority claimed from CN201910517509.6A external-priority patent/CN110067024B/zh
Application filed by Shandong University filed Critical Shandong University
Priority to US17/595,832 priority Critical patent/US12595590B2/en
Priority to JP2021568831A priority patent/JP7589999B2/ja
Publication of WO2020248987A1 publication Critical patent/WO2020248987A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/14—Phosphates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/355—Non-linear optics characterised by the materials used
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials

Definitions

  • the invention relates to a photoelectric functional crystal M 3 RE(PO 4 ) 3 and a preparation method and application thereof, and belongs to the technical field of photoelectric functional crystals.
  • optoelectronic functional crystal materials are valued by countries all over the world.
  • the development of laser and optoelectronics has further promoted the development and application of functional crystals.
  • the research and application of my country's optoelectronic functional crystals are at the forefront of the world, especially the research of inorganic nonlinear optical crystals.
  • the current international competition in the field of optoelectronic functional crystals is becoming increasingly fierce, and researchers in the field of crystal materials in my country are still striving to develop new crystal materials.
  • photoelectric functional crystals which mainly include nonlinear optical crystals, piezoelectric crystals, laser crystals, scintillation crystals, etc. according to their functions.
  • optoelectronic functional crystal materials are limited, and it is urgent to explore new functional crystal materials to develop new optoelectronic devices and expand new applications.
  • M 3 RE(PO 4 ) 3 structure type compounds currently, the main focus is on the synthesis and luminescence properties of nanometer phosphors doped with different rare earth ions.
  • the present invention provides a series of photoelectric functional crystals with the general formula M 3 RE(PO 4 ) 3 and a preparation method thereof.
  • the invention also provides a yttrium strontium phosphate crystal.
  • the invention also provides applications of the yttrium strontium phosphate crystal.
  • the yttrium strontium phosphate crystal has the chemical formula Sr 3 Y(PO 4 ) 3 , and the conventional expression in this field is abbreviated as SYP.
  • SYP the conventional expression in this field.
  • the expressions of Sr 3 Y(PO 4 ) 3 and SYP have the same meaning in the present invention.
  • Room temperature has a well-known meaning in the art, generally means 25 ⁇ 5°C.
  • Lifting off the crystal Lifting the crystal from the melt surface.
  • the Czochralski method is used for the first time to grow M 3 RE(PO 4 ) 3 series crystals with a non-centrosymmetric structure.
  • the M 3 RE(PO 4 ) 3 crystal belongs to the cubic system -43m point group. It not only has a higher optical transmittance and a wider absorption edge, but also has no phase change from room temperature to melting point. It has piezoelectric activity and non-uniformity. Linear frequency conversion characteristics have application prospects in the field of optoelectronic functional devices.
  • An optoelectronic functional crystal with the general formula M 3 RE(PO 4 ) 3 which has a non-centrosymmetric structure and belongs to the cubic crystal system -43m point group, where M is an alkaline earth metal and RE is a rare earth element.
  • the alkaline earth metal is Ba, Ca or Sr.
  • the rare earth element is preferably Y, La, Gd or Yb.
  • the rare earth elements of the present invention are not limited to the four types of Y, La, Gd or Yb, but are also applicable to other rare earth elements. They also have good mechanical properties, are not easy to deliquesce and melt uniformly, due to their non-centrosymmetric structure
  • Features, suitable for nonlinear optical crystals and piezoelectric crystals are that the crystal has a high melting point, no phase change from room temperature to melting point, stable chemical properties, non-deliquescent, and a non-centrosymmetric structure and high melting point compound. And wide temperature zone nonlinear optics field has obvious advantages.
  • the M 3 RE(PO 4 ) 3 photoelectric functional crystal is selected from one of the following:
  • Ba 3 Y(PO 4 ) 3 crystals Ba 3 La(PO 4 ) 3 crystals, Ba 3 Yb(PO 4 ) 3 crystals, Ca 3 Gd(PO 4 ) 3 crystals, Sr 3 Y(PO 4 ) 3 crystals, Sr 3 La(PO 4 ) 3 crystal, Sr 3 Gd(PO 4 ) 3 crystal; the corresponding chemical names are: yttrium barium phosphate crystal, lanthanum barium phosphate crystal, ytterbium barium phosphate crystal, gadolinium calcium phosphate crystal, yttrium strontium phosphate Crystal, lanthanum strontium phosphate crystal, gadolinium strontium phosphate crystal.
  • spectral analysis measured Ba 3 Y(PO 4 ) 3 crystal, Ba 3 La(PO 4 ) 3 crystal, Ca 3 Gd(PO 4 ) 3 crystals, Sr 3 La(PO 4 ) 3 crystals, and Sr 3 Gd(PO 4 ) 3 crystals respectively have high optical transmittances of >70% in the 325nm-4302nm band.
  • the photoelectric functional crystal of M 3 RE(PO 4 ) 3 is measured by impedance method for Ba 3 Y(PO 4 ) 3 crystal, Ba 3 La(PO 4 ) 3 crystal, Ba 3 Yb(PO 4 ) 3 crystals, Ca 3 Gd(PO 4 ) 3 crystals, Sr 3 La(PO 4 ) 3 crystals, and Sr 3 Gd(PO 4 ) 3 crystals respectively.
  • the effective piezoelectric constant d eff >6pC/N indicates that it has Piezoelectric activity.
  • the crystal is a non-centrosymmetric structure and belongs to the cubic system -43m point group.
  • the crystal has no phase change from room temperature to melting point.
  • the melting point of the yttrium strontium phosphate crystal is basically 1850°C, and there is no phase change from room temperature to the melting point.
  • spectral analysis measured that the crystal has a high optical transmittance of >80% in the 480nm-4100nm band.
  • the method for growing the M 3 RE(PO 4 ) 3 optoelectronic functional crystal includes:
  • the raw materials MCO 3 , RE 2 O 3 and phosphorus-containing compounds are accurately weighed in a stoichiometric ratio, and on this basis, the phosphorus-containing compounds are further increased by 1.5-10% of the total mass Mass percentage (based on the mass of the phosphorous compound in the stoichiometric ratio);
  • M 3 RE(PO 4 ) 3 polycrystalline material synthesized in step (1) into an iridium crucible in a single crystal growth furnace.
  • the furnace is evacuated and filled with protective gas nitrogen or argon, using intermediate frequency induction heating method Heat up the M 3 RE(PO 4 ) 3 polycrystalline material to melt. After the polycrystalline material is completely melted, the temperature is reduced to make it condense, and then the temperature is raised again to melt all of it. Repeat this several times to remove the bubbles generated in the melt; then Then overheat the melt for 10-20°C and keep it at a constant temperature for 0.5-2 hours to obtain a uniformly melted M 3 RE(PO 4 ) 3 melt;
  • iridium rod or M 3 RE(PO 4 ) 3 crystal as the seed crystal, lower the seed crystal to the M 3 RE(PO 4 ) 3 melt surface, make the bottom end of the seed crystal vertical and just contact the melt, and start Single crystal growth; single crystal growth process conditions are as follows: growth temperature 1800-1950 °C; when the seed crystal is necked, the pulling speed is 1-5mm/h, when the shoulder is placed, the pulling speed is reduced to 0.2-1mm/h. The pulling speed is 0.5-1mm/h; when the crystal grows to the required size, the crystal is lifted off.
  • the crystal is kept at a constant temperature in a temperature field for 0.5-1 h, and then lowered to room temperature at a rate of 5-30° C./h to obtain an M 3 RE(PO 4 ) 3 crystal.
  • the M 3 RE(PO 4 ) 3 crystal After taking out the M 3 RE(PO 4 ) 3 crystal from the single crystal growth furnace, it is annealed at a temperature of 1200-1400°C. Preferably, the annealing time is 24-48 hours, so that the thermal stress generated during the growth of the M 3 RE(PO 4 ) 3 crystal is fully released. Preferably, the M 3 RE(PO 4 ) 3 crystal is placed in a high-temperature muffle furnace for annealing treatment.
  • the phosphorus-containing compound is NH 4 H 2 PO 4 or P 2 O 5 . It is further preferred that the total mass of the phosphorus-containing compound is exceeded by 3-6% by mass.
  • the raw materials in step (1) of the present invention are all prepared with high-purity raw materials with a purity greater than 99.9%; these raw materials can be purchased through conventional channels.
  • the primary sintering and secondary sintering of the raw materials are both performed in a ceramic crucible.
  • the purpose of primary sintering is to decompose and remove CO 2 , NH 3 and H 2 O, and improve the purity of synthetic polycrystalline materials.
  • the invention adopts the melt pulling method for crystal growth.
  • the iridium gold crucible is used, in order to prevent the iridium gold from being oxidized at high temperature, the crystal growth needs to be performed under the protection of an inert gas atmosphere such as nitrogen or argon.
  • an inert gas atmosphere such as nitrogen or argon.
  • the volume fraction of nitrogen or inert gas is 90%-95%.
  • the bubbles generated in the melt are completely drained after repeated cooling and condensation-heating and melting, so as to reduce crystal growth defects (bubbles and inclusions, etc.) Crystal growth quality.
  • the cooling condensation-heating melting is repeated 3-4 times.
  • the crystal growth in step (3) goes through four stages of necking, shouldering, isodiametric growth and crystal lifting; wherein, during the necking process, the pulling speed is controlled to be 1-8mm/h, when When the diameter of the seed crystal is reduced to 0.5-2.0mm, start to slowly lower the temperature at 0.5-5°C/h, and carry out shoulder placement; in the shoulder placement stage, the pulling speed is reduced to 0.2-1mm/h; when the diameter of the crystal shoulder reaches When the size is predetermined, the temperature is raised or lowered at a rate of 0-5°C/h, and the temperature is controlled at 1800-1950°C for isodiametric growth; when the crystal is pulled to the required height, the crystal is lifted.
  • the process conditions of the crystal lifting and removing process are: slowly increasing the temperature at a rate of 10-50° C./h, and when the bottom of the crystal tends to shrink inward, the lifting speed is increased to 5-20 mm/h. Pull the crystal to separate it from the melt.
  • the crystal growth size is generally 15-30 mm in diameter and 20-50 mm in height.
  • the time required for the growth of M 3 RE(PO 4 ) 3 crystals of this size is generally 4-7 days.
  • the size of the crystal refers to the normal diameter and total height of the crystal.
  • the yttrium strontium phosphate crystal of the present invention is grown by the pulling method.
  • the technical key lies in the ratio of raw materials, especially the use of excess phosphate raw materials, as well as the synthesis of polycrystalline materials, and at an appropriate temperature and a specific temperature. Obtain high optical quality single crystals that meet the application requirements of nonlinear optics and piezoelectric functional materials under field conditions.
  • the method for preparing the yttrium strontium phosphate crystal includes:
  • the raw materials containing Sr compound, Y compound and P compound are mixed and sintered to synthesize yttrium strontium phosphate polycrystalline material.
  • the temperature is raised to melt the yttrium strontium phosphate polycrystalline material, and the yttrium strontium phosphate polycrystalline material is melted by repeated cooling and condensation and heating for several times to obtain uniform melting Of yttrium strontium phosphate melt;
  • the raw material contains Sr compounds, Y-containing compounds, and P-containing compounds based on the stoichiometric ratio, and an excess of 2.5-7.5% by mass based on the mass of the P-containing compound ;
  • An iridium rod or a yttrium strontium phosphate crystal is used as the seed crystal, and the bottom end of the seed crystal is just in contact with the yttrium strontium phosphate melt, and the single crystal growth is performed by the pulling method.
  • the single crystal growth temperature is 1700-1850°C.
  • the Sr-containing compound, Y-containing compound and P-containing compound are each independently selected from at least one of the corresponding oxides, carbonates, phosphates, halides, nitrates, oxalates and borates. Species, and compounds containing Sr, Y, and P elements cannot be halide at the same time.
  • the Sr-containing compound is selected from the corresponding oxide, carbonate, halide, sulfate or nitrate compound; the Y-containing compound is selected from the corresponding oxide, nitrate or phosphate; The P-containing compound is selected from the corresponding oxide or phosphate.
  • the Sr-containing compound is SrCO 3
  • the Y-containing compound is Y 2 O 3
  • the P-containing compound is NH 4 H 2 PO 4 or P 2 O 5 .
  • the Sr-containing compound, Y-containing compound and P-containing compound in the above raw materials are made to be in excess of 3-5% by mass based on the mass of the P-containing compound on the basis of the stoichiometric ratio.
  • the yttrium strontium phosphate polycrystalline material when preparing the yttrium strontium phosphate polycrystalline material, high temperature sintering is performed twice after the raw materials are mixed to ensure the growth quality of the crystal.
  • the raw materials are mixed and sintered according to the following method: the weighed raw materials are ground and mixed uniformly, and then sintered once.
  • the sintering temperature is 800°C-950°C, and the temperature is constant for 10-15 hours to decompose and remove CO 2 , NH 3 and H 2 O; then lower to room temperature, fully grind and refine the raw materials for the primary sintering and mix them evenly, press them into a cake-like block for secondary sintering, the sintering temperature is 1200°C-1400°C, the constant temperature is 20-40 After hours, the raw materials undergo solid-phase reaction to obtain polycrystalline yttrium strontium phosphate. More preferably, the above sintering is performed by placing the raw materials in a ceramic crucible in a sintering furnace.
  • the yttrium strontium phosphate polycrystalline material is melted, it is repeatedly cooled to condense and heated to melt 3-4 times.
  • the polycrystalline material is heated and melted and then cooled and condensed for many times, so that the bubbles generated in the melt are completely drained, so as to reduce crystal growth defects (bubbles and inclusions, etc.) to improve the quality of crystal growth.
  • the yttrium strontium phosphate polycrystalline material is melted, it is repeatedly cooled and condensed and heated to melt for several times, and then the melt is overheated by 10-20° C. and kept at a constant temperature for 0.5-2 hours to further uniformly melt.
  • the volume fraction of nitrogen or inert gas in the single crystal growth furnace is 90%-95%.
  • yttrium strontium phosphate crystals need to be grown for the first time with iridium with a higher melting point as seed crystals; after yttrium strontium phosphate crystals are prepared, yttrium strontium phosphate crystals should be used as seed crystals OK.
  • the crystal growth process includes four stages of necking, shouldering, isodiametric growth, and crystal lifting; preferably, the pulling speed in the necking stage is controlled to 2-5mm/h, when the diameter of the seed crystal is closed When it is as thin as 0.5-2.0mm, start to lower the temperature slowly at 0.5-5°C/h, and then lower the shoulder; in the shoulder-releasing stage, reduce the pulling speed to 0.2-2mm/h, when the diameter of the crystal shoulder reaches the required crystal diameter , And then raise or lower the temperature at a rate of 0-5°C/h for isodiametric growth.
  • the pulling speed is 0.4-0.7mm/h and the rotation speed is 6-8r/min; when the crystal is pulled to the required Remove the crystal when the crystal is high.
  • the method for removing crystals is as follows: slowly increase the temperature at a rate of 10-50°C/h, and when the bottom of the crystal tends to shrink inward, increase the pulling speed to 5-20mm/h, Pull the crystal to separate it from the melt.
  • the yttrium strontium phosphate crystal growth method of the present invention further includes an annealing step; the annealing step includes: after the yttrium strontium phosphate crystal is grown, the yttrium strontium phosphate crystal is taken out and placed in a high-temperature muffle furnace. Annealing, the annealing temperature is 1200-1400°C, and the annealing time is 24-48 hours. The thermal stress generated during the growth of Sr 3 Y(PO 4 ) 3 crystal is fully released.
  • the size of Sr 3 Y(PO 4 ) 3 grown in the present invention is generally: 20-50mm in height and 15-30mm in diameter.
  • the growth time of Sr 3 Y(PO 4 ) 3 crystals of this size is generally 4-5 days.
  • the size of the crystal mentioned here refers to the normal diameter and total height of the crystal.
  • the method for preparing the yttrium strontium phosphate crystal includes the following steps:
  • step (1) Grind and mix the weighed raw materials in step (1), and then put them into a ceramic crucible for a sintering.
  • the sintering temperature is 800°C-950°C and the temperature is constant for 10-15 hours; then the raw materials are reduced to room temperature and the raw materials are sintered.
  • step (2) Put the yttrium strontium phosphate polycrystalline material synthesized in step (2) into an iridium-gold crucible in a single crystal growth furnace.
  • the furnace is evacuated and filled with protective gas nitrogen or argon.
  • the yttrium strontium phosphate polycrystalline material is heated by intermediate frequency induction heating.
  • the crystal material is heated to melting, the polycrystalline material is completely melted and then cooled to condense, and then the temperature is raised again to melt all of it. Repeat this several times to remove the bubbles generated in the melt; and then overheat the melt for 10-20 °C, constant temperature for 0.5-2 hours to obtain a uniformly melted yttrium strontium phosphate melt;
  • the seed crystal is vertically lowered into the yttrium strontium phosphate melt of step (3), so that the bottom end of the seed crystal is perpendicular to and just in contact with the melt, and the single crystal growth is started.
  • the single crystal growth temperature is 1700-1850°C; the crystal growth process includes four stages of necking, shouldering, isodiametric growth and crystal lifting; the pulling speed of the necking stage is 2-5mm/h, when the diameter of the seed crystal is closed When the thickness is as small as 0.5-2.0mm, start to slowly lower the temperature at 0.5-5°C/h, and then carry out shoulder lifting; in the shoulder lifting stage, the pulling speed is reduced to 0.2-2mm/h, when the diameter of the grown crystal shoulder reaches the required crystal diameter When the crystal is removed, the temperature is increased or decreased at a rate of 0-5°C/h for isodiametric growth; when the crystal is pulled to the required crystal height, the crystal is lifted; after the crystal is lifted, the crystal is held in the temperature field at a constant temperature of 0.5- 1h, then reduce to room temperature at a rate of 5-30°C/h to obtain yttrium strontium phosphate crystals;
  • the annealing temperature is 1200-1400°C and the annealing time is 24-48 hours.
  • the pulling speed in the necking stage is 3-5mm/h, and the rotating speed is 8-15r/min; the pulling speed in the shoulder laying stage is reduced to 0.3-0.8mm/h, and the rotating speed is 6-10r/min. min; The pulling speed is 0.5-0.6mm/h during equal diameter growth, and the rotation speed is 8r/min.
  • the raw materials are all prepared with high-purity raw materials with a purity greater than 99.9%; the raw materials required for crystal growth can be purchased through conventional channels.
  • the yttrium strontium phosphate Sr 3 Y(PO 4 ) 3 provided by the present invention is a new type of photoelectric functional crystal, belonging to the cubic system -43m point group, with non-centrosymmetric crystal structure characteristics, good mechanical properties and uniform melting characteristics , It is not easy to deliquesce, and it can grow large-size high-quality single crystal in a short time by pulling method; due to its non-centrosymmetric structure, it is suitable for nonlinear optical crystal and piezoelectric crystal.
  • the present invention provides the following uses of Sr 3 Y(PO 4 ) 3 crystals:
  • the Sr 3 Y(PO 4 ) 3 crystal of the present invention is used as a nonlinear optical crystal and piezoelectric crystal.
  • the Sr 3 Y(PO 4 ) 3 crystal is used as a laser matrix crystal, a nonlinear frequency change crystal, and a high-temperature piezoelectric crystal.
  • the crystallographic axis of the Sr 3 Y(PO 4 ) 3 crystal is oriented by an X-ray directional instrument; the frequency doubling effect can be observed when the yttrium strontium phosphate crystal is passed through the 2090nm laser, and the crystal can achieve effective frequency doubling of the 2090nm wavelength laser.
  • the different Sr 3 Y(PO 4 ) 3 crystal cut shapes were raised from room temperature to 1000°C, and the observation showed that the crystal still has piezoelectric activity, as shown in Figure 14, which indicates that the crystal is in the piezoelectric field, especially high-temperature piezoelectricity. The field has potential applications.
  • the Sr 3 Y(PO 4 ) 3 crystal cut type is an XZ, XY or ZX cut type, or an XZ, XY, ZX cut type, which is obtained by rotating around X or Y or Z respectively.
  • the nonlinear optical function device includes a laser frequency converter, an optical parameter Amplifier, optical parametric oscillator or Raman frequency converter;
  • the piezoelectric device includes a piezoelectric resonator, an oscillator, a filter, a piezoelectric transducer, a piezoelectric pressure sensor, an acoustic transducer or Ultrasonic sensor.
  • the raw materials are mixed and then high-temperature sintering is performed twice, and the sintering is performed at a temperature below the melting point to decompose and remove CO 2 , NH 3 and H 2 O;
  • the secondary sintering should be performed at a temperature to prepare a high-purity polycrystalline material to ensure the quality of crystal growth.
  • the crystal growth needs to be seeded at the full melting point.
  • the key technology of the crystal growth stage is that the pulling speed and the number of revolutions in each stage need to be specially controlled to obtain high-quality single crystals.
  • the invention adopts the pulling method to grow large-size and high-quality M 3 RE(PO 4 ) 3 single crystals in a short time.
  • the present invention provides a new series of photoelectric function M 3 RE (PO 4 ) 3 crystals, which have good mechanical properties, are not easy to deliquesce and are uniformly melted. Due to their non-centrosymmetric structure, they are suitable for nonlinear optical crystals and pressure Transistor.
  • the advantage of the application of nonlinear optical crystals and piezoelectric crystals is that the crystal has a high melting point, no phase change from room temperature to melting point, stable chemical properties, and non-deliquescent. It is a rare compound with a non-centrosymmetric structure and high melting point. Therefore, it has obvious advantages in the field of high temperature piezoelectricity and wide temperature range nonlinear optics.
  • this series of crystal melt viscosity is small, it is easy to remove impurities during crystal growth, and the growth speed is fast, which is convenient for obtaining high-quality single crystals, which is beneficial to subsequent application research and development.
  • the inventors unexpectedly discovered that yttrium strontium phosphate crystals are different from other isomorphous compounds in that their uniform melting zone is very narrow.
  • the present invention creatively adopts a method of 2.5-7.5% of the total excess mass of the P-containing compound (phosphate or phosphorus pentoxide) to obtain high-quality yttrium strontium phosphate single crystal, which meets the requirements of optical high quality.
  • the P-containing compound phosphate or phosphorus pentoxide
  • Studies have found that yttrium strontium phosphate crystals cannot be grown if the stoichiometric ratio is used in the usual way. When the excess of phosphate or phosphorus pentoxide is too low, the quality of the obtained yttrium strontium phosphate crystals cannot meet the requirements of optical high quality.
  • the present invention provides a new type of photoelectric functional crystal Sr 3 Y(PO 4 ) 3 .
  • the advantage of Sr 3 Y(PO 4 ) 3 crystal as a nonlinear optical crystal and piezoelectric crystal is that the melting point of the crystal is higher than 1800 °C, and there is no phase change from room temperature to the melting point, the chemical properties are stable, and it is not deliquescent. It is a rare compound with a non-centrosymmetric structure and a high melting point, so it has obvious advantages in the field of high temperature piezoelectricity and wide temperature range nonlinear optics.
  • the crystal melt viscosity is small, impurities are easily removed during crystal growth, and the growth speed is fast, which is convenient for obtaining high-quality single crystals, which is beneficial to subsequent application research and development.
  • Figure 1 is an XRD phase diagram of the M 3 R(PO 4 ) 3 series crystals.
  • Figure 2 is a photo of Ba 3 Y(PO 4 ) 3 crystals grown in Example 1.
  • Figure 3 is a photo of Ba 3 La(PO 4 ) 3 crystals grown in Example 2.
  • Fig. 5 is a transmission spectrum of Ba 3 Y(PO 4 ) 3 crystal of Example 1.
  • Figure 6 is the dielectric spectrum of the Ba 3 Y(PO 4 ) 3 crystal of Example 1
  • Fig. 7 is a photo of the product obtained in Comparative Example 1, Ba 3 Y(PO 4 ) 3 polycrystal obtained by compounding in a stoichiometric ratio.
  • Figure 8 is a photograph of the product obtained in Comparative Example 2.
  • the obtained Ca 3 Gd(PO 4 ) 3 crystal has poor optical quality.
  • Example 9 is a photograph of Sr 3 Y(PO 4 ) 3 crystals grown in Example 5.
  • Fig. 10 is an X-ray diffraction pattern of Sr 3 Y(PO 4 ) 3 crystal.
  • Figure 11 is a photograph of a product grown by the method of Comparative Example 3.
  • FIG. 12 is the frequency doubling data of Sr 3 Y(PO 4 ) 3 crystal at 2090 nm in Example 5.
  • the AgGaS 2 crystal serves as a comparison.
  • the abscissa is the powder size of the yttrium strontium phosphate crystal and gallium sulphur silver crystal samples, and the ordinate is the relative intensity.
  • FIG. 13 is a transmission spectrum of the Sr 3 Y(PO 4 ) 3 crystal of Example 5.
  • Fig. 15 is an impedance phase angle spectrum produced by the ZX-cut piezoelectric effect of the Sr 3 Y(PO 4 ) 3 crystal of Example 9.
  • FIG. 16 shows the Sr 3 Y(PO 4 ) 3 crystal grown in Comparative Example 4.
  • Fig. 17 is a photograph of Ba 3 Yb(PO 4 ) 3 crystals grown in Example 11.
  • FIG. 18 is an X-ray diffraction pattern of the Ba 3 Yb(PO 4 ) 3 crystal of Example 11.
  • the purity of the raw materials 1-6 in the embodiment is greater than 99.9%.
  • step (2) Fully mix the raw materials prepared in step (1) and put them into an alumina crucible, and place them in a muffle furnace for the first sintering.
  • the sintering temperature is 850 ⁇ 50°C and the temperature is kept constant for 12 hours.
  • the raw materials are removed ⁇ CO 2 , NH 3 and H 2 O;
  • step (3) Put the yttrium barium phosphate polycrystalline raw material synthesized in step (2) into an iridium crucible in a single crystal furnace, evacuate the furnace and fill it with nitrogen as a protective gas, and use intermediate frequency induction heating to heat the polycrystalline raw material To melt, the polycrystalline material is completely melted and then cooled to condense, and then the temperature is raised again to melt all of it. This is repeated 3 times to eliminate the bubbles generated in the melt. After that, the melt is overheated at 20°C and kept at a constant temperature for 0.5 hours to obtain a uniformly melted yttrium barium phosphate melt;
  • step (3) Using a barium yttrium phosphate polycrystalline rod as a seed crystal, slowly immerse it into the polycrystalline melt of step (3), so that the top of the seed crystal is perpendicular to and just in contact with the melt, and then the single crystal is grown;
  • Single crystal growth process conditions temperature 1850 ⁇ 50°C; when the seed crystal is necked, the pulling speed is controlled to 5mm/h, when the diameter of the seed crystal is reduced to about 1mm, start to slowly cool down at 1-4°C/h, and carry out shoulder setting ; When the shoulder is placed, the pulling speed is reduced to 0.5-1mm/h; when the diameter of the crystal shoulder reaches the predetermined size of about 22mm, the temperature is raised and lowered at a speed of 1-4°C/h for isodiametric growth; The pulling speed is 0.5-0.7mm/h. When the crystal grows to a height of about 40mm, the crystal will be lifted. First, the temperature will be slowly increased at a rate of 15-20°C/h. When the temperature is increased, the bottom of the crystal will shrink inwardly When the trend is high, increase the pulling speed to 10-15mm/h and pull the crystal to separate it from the melt.
  • the crystals After removing the crystals, the crystals are kept constant in a temperature field for 45 minutes, and then lowered to room temperature at a rate of 10°C/h to obtain barium yttrium phosphate crystals.
  • the annealing temperature is 1300°C and the annealing time is 24 hours to fully release the thermal stress generated during the growth of Ba 3 Y(PO 4 ) 3 crystals.
  • the obtained Ba 3 Y(PO 4 ) 3 crystal is shown in Fig. 2 with good optical quality.
  • step (2) Fully mix the raw materials prepared in step (1) and put them into an alumina crucible for the first sintering.
  • the sintering temperature is 900°C and the temperature is kept constant for 10 hours to decompose and remove CO 2 , H 2 O and NH 3 ;
  • the first sintered raw materials are fully ground and mixed uniformly, then pressed into a block, put into an alumina ceramic crucible for solid phase reaction, the sintering temperature is 1400 °C and the constant temperature is 30h, to obtain the barium lanthanum phosphate Polycrystalline raw materials;
  • step (3) Put the lanthanum barium phosphate polycrystalline material obtained in step (2) into an iridium-gold crucible in a single crystal furnace, evacuate the furnace and fill it with nitrogen as a protective gas to prevent the iridium-gold crucible from being oxidized, and use intermediate frequency induction heating
  • the polycrystalline raw material is heated to melting, the polycrystalline material is completely melted and then cooled to condense, and then the temperature is raised again to melt all of it, and this is repeated 2-4 times to remove the bubbles generated in the melt.
  • the melt is overheated at about 15°C and kept at a constant temperature for 1 hour to obtain a uniformly melted lanthanum barium phosphate melt;
  • step (3) Using an iridium rod as a seed crystal, slowly immerse it into the polycrystalline melt of step (3), so that the top of the seed crystal is perpendicular to and just in contact with the melt, and then the single crystal is grown;
  • Single crystal growth process conditions growth temperature 1850 ⁇ 50°C; when the seed crystal is necked, the pulling speed is controlled at 6mm/h. When the diameter of the seed crystal is reduced to about 1.5mm, start to slowly cool down at 5°C/h, and carry out shoulder setting ; When the shoulder is placed, the pulling speed is reduced to 0.3mm/h; when the diameter of the shoulder of the crystal reaches the predetermined size of about 30mm, the temperature is raised and lowered at a speed of 0-5°C/h for isodiametric growth; The pulling speed is 0.6mm/h. When the crystal grows to a height of about 50mm, the crystal is ready to be lifted; the lift-off process is as follows: slowly increase the temperature at a rate of 20°C/h. When the temperature is increased, it is observed that there is When there is a tendency to shrink inward, increase the pulling speed to 15mm/h and pull the crystal to separate it from the melt.
  • the crystals are kept constant in the temperature field for 1 hour, and then lowered to room temperature at a rate of 10° C./h to obtain barium lanthanum phosphate crystals.
  • the obtained Ba 3 La(PO 4 ) 3 crystal is shown in Fig. 3 and has good optical quality.
  • the crystal annealing treatment is the same as in Example 1.
  • step (2) Fully mix the raw materials prepared in step (1) and put them into an alumina crucible, and place them in a muffle furnace for the first sintering.
  • the sintering temperature is 900°C and the temperature is kept constant for 13 hours to remove CO in the raw materials. 2.
  • step (3) Put the polycrystalline calcium gadolinium phosphate synthesized in step (2) into an iridium crucible in a single crystal furnace, evacuate the furnace and fill it with nitrogen as a protective gas, and use intermediate frequency induction heating to raise the temperature of the polycrystalline raw material To melt, the polycrystalline material is completely melted and then cooled to condense, and then the temperature is raised again to melt all of it. This is repeated 3 times to eliminate the bubbles generated in the melt. Then, the melt is overheated at 20°C and kept at a constant temperature for 0.5 hours to obtain a uniformly melted calcium gadolinium phosphate melt;
  • step (3) Using an iridium rod as a seed crystal, slowly immerse it into the polycrystalline melt of step (3), so that the top of the seed crystal is perpendicular to and just in contact with the melt, and then the single crystal is grown;
  • Single crystal growth process conditions temperature 1800 ⁇ 50°C; when the seed crystal is necked, the pulling speed is controlled at 5mm/h, when the seed crystal diameter is reduced to about 1mm, the temperature is slowly reduced at 3°C/h, and shoulders are placed; When the shoulder is placed, the pulling speed is reduced to 0.3-1mm/h; when the diameter of the crystal shoulder reaches the predetermined size of 15-25mm, the temperature is raised and lowered at a speed of 1-4°C/h for isodiametric growth; The pulling speed is 0.5mm/h. When the crystal grows to the required size of 30-50mm, the crystal will be lifted off. The temperature will be increased slowly at a rate of 25°C/h. When the temperature is increased, the bottom of the crystal will shrink inwardly. When, increase the pulling speed to 15-20mm/h and pull the crystal to separate it from the melt.
  • the crystals were kept constant in a temperature field for 45 minutes, and then lowered to room temperature at a rate of 10°C/h to obtain calcium gadolinium phosphate crystals.
  • the obtained Ca 3 Gd(PO 4 ) 3 crystals are shown in Figure 4 and have good optical quality.
  • the crystal annealing treatment is the same as in Example 1.
  • step (2) Fully mix the raw materials prepared in step (1) and put them into an alumina crucible, and place them in a muffle furnace for the first sintering.
  • the sintering temperature is 850°C and the temperature is kept constant for 15 hours to remove CO in the raw materials. 2.
  • step (3) Put the lanthanum strontium phosphate polycrystalline raw material synthesized in step (2) into an iridium-gold crucible in a single crystal furnace.
  • the furnace is evacuated and filled with nitrogen as a protective gas, and the polycrystalline raw material is heated by medium frequency induction heating To melt, the polycrystalline material is completely melted and then cooled to condense, and then the temperature is raised again to melt all of it. This is repeated 3 times to eliminate the bubbles generated in the melt. Then, the melt is overheated at 20°C and kept at a constant temperature for 0.5 hours to obtain a uniformly melted lanthanum strontium phosphate melt;
  • step (3) Using the iridium rod as the seed crystal, slowly immerse it into the polycrystalline melt of step (3), so that the top of the seed crystal is vertical and just in contact with the melt, and then the single crystal is grown;
  • Single crystal growth process conditions temperature 1800-1900°C; when the seed crystal is necked, the pulling speed is controlled at 6mm/h. When the diameter of the seed crystal is reduced to about 1mm, start to slowly cool down at 1-3°C/h, and carry out Shoulder; when the shoulder is placed, the pulling speed is reduced to 0.4mm/h; when the diameter of the crystal shoulder reaches the predetermined size of 15-25mm, the temperature is raised and lowered at a speed of 1-4°C/h for isodiametric growth; When the pulling speed is 0.6mm/h, when the crystal grows to the required size of 20-35mm, the crystal is lifted off, and the temperature is slowly increased at a rate of 20°C/h. When the temperature is increased, the bottom of the crystal is observed to shrink inward When, increase the pulling speed to 10-15mm/h and pull the crystal to separate it from the melt.
  • the crystal is kept at a constant temperature in a temperature field for 45 minutes, and then lowered to room temperature at a rate of 10°C/h to obtain a lanthanum strontium phosphate crystal.
  • the crystal annealing treatment is the same as in Example 1.
  • step (1) BaCO 3 , Y 2 O 3 and NH 4 H 2 PO 4 are used as raw materials for crystal growth, according to the chemical formula of barium yttrium phosphate Ba 3 Y(PO 4 ) 3.
  • the results showed that: due to the component deviation and delamination phenomenon occurred after the yttrium barium phosphate raw material was melted, Ba 3 Y(PO 4 ) 3 single crystal could not be grown when the lower seed crystal was pulled.
  • the photo of the growth product is shown in Figure 7. It is Ba 3 Y(PO 4 ) 3 polycrystalline.
  • step (1) the CaCO 3 , Gd 2 O 3 and NH 4 H 2 PO 4 raw materials are compounded according to the chemical formula Ca 3 Gd(PO 4 ) 3 stoichiometric ratio, Furthermore, the NH 4 H 2 PO 4 raw material is excessively 0.5% by mass. The quality of the grown crystals is poor, as shown in Figure 8. Studies have found that the phosphate in this example is only 0.5% in excess, which is not enough to compensate for the deviation of the composition caused by the volatilization of phosphorus during crystal growth, resulting in poor crystallinity of calcium gadolinium phosphate single crystal.
  • SrCO 3 , Y 2 O 3 and NH 4 H 2 PO 4 are used as raw materials for crystal growth.
  • the stoichiometric ratio is used for batching, and NH 4 3% of the total mass of excess H 2 PO 4 phosphate;
  • step (2) Fully mix the raw materials prepared in step (1) and put them into an alumina crucible for the first sintering.
  • the sintering temperature is 900°C and the temperature is kept constant for 10 hours to decompose and remove CO 2 , H 2 O and NH 3 ;
  • step (3) Put the yttrium strontium phosphate polycrystalline material obtained in step (2) into an iridium-gold crucible in a single crystal furnace, evacuate the furnace and fill it with nitrogen as a protective gas to prevent the iridium-gold crucible from being oxidized, and use intermediate frequency induction heating
  • the polycrystalline material is heated to melting, the polycrystalline material is fully melted and then cooled to condense, and then the temperature is raised again to melt all of it, and this is repeated 3 times to remove the bubbles generated in the melt.
  • the melt is overheated at about 20°C and kept at constant temperature for 1 hour to obtain a uniformly melted yttrium strontium phosphate melt;
  • step (3) Using an iridium rod as a seed crystal, slowly immerse it into the polycrystalline melt of step (3), so that the top of the seed crystal is perpendicular to and just in contact with the melt, and then the single crystal is grown;
  • the growth temperature is 1800°C; when the seed crystal is necked, the pulling speed is controlled at 3 ⁇ 3.5mm/h, and the speed is 8-15r/min; when the diameter of the seed crystal is reduced to 1mm, it starts at 0.5°C/ h Slowly lower the temperature, then put the shoulders; when the shoulders are put, the pulling speed is reduced to 0.3 ⁇ 0.4mm/h, and the rotation speed is 6-8r/min; when the diameter of the crystal shoulder reaches the predetermined size of 20mm, the speed is 0.3°C/h The temperature is raised and lowered at the speed for equal diameter growth; during equal diameter growth, the pulling speed is 0.5mm/h and the rotation speed is 8r/min.
  • the lift off process is as follows: increase the temperature at a rate of 20°C/h, and when the bottom of the crystal is observed to shrink inward at the rising temperature, increase the pulling speed to 5mm /h Pull the crystal to separate it from the melt. After the crystal is removed, the crystal is kept constant in the temperature field for 1 hour, and the temperature is reduced to room temperature at a rate of 10° C./h to obtain a yttrium strontium phosphate crystal.
  • the annealing temperature is 1300°C and the annealing time is 24 hours to fully release the thermal stress generated during the growth of Sr 3 Y(PO 4 ) 3 crystals.
  • the obtained Sr 3 Y(PO 4 ) 3 crystal passes through 2090 nm light, a frequency doubling effect is observed, and the crystal can achieve effective frequency doubling of the 2090 nm wavelength laser.
  • the AgGaS 2 crystal in the figure as a comparison shows that the Sr 3 Y(PO 4 ) 3 crystal can achieve effective frequency multiplication in the infrared band.
  • the transmission spectrum of the Sr 3 Y(PO 4 ) 3 crystal is shown in FIG. 13.
  • the 480nm-4100nm band there is a transmittance of >80%, indicating that the grown crystal has good optical uniformity, and the absorption cut-off edge is lower than 180nm, indicating that this crystal has potential applications in the deep ultraviolet band.
  • SrCO 3 , Gd 2 O 3 and P 2 O 5 are used as raw materials for crystal growth. According to the chemical formula of gadolinium strontium phosphate, Sr 3 Gd(PO 4 ) 3 , the stoichiometric ratio is used for compounding, and further P 2 O 5 5% excess of total mass;
  • step (2) Fully mix the raw materials prepared in step (1) and put them into an alumina crucible for the first sintering at a sintering temperature of 900°C and a constant temperature for 15 hours to decompose and remove CO 2 and H 2 O;
  • step (3) Put the gadolinium strontium phosphate polycrystalline material obtained in step (2) into an iridium-gold crucible in a single crystal furnace.
  • the furnace is evacuated and filled with nitrogen as a protective gas to prevent oxidation of the iridium-gold crucible, and heated by medium frequency induction
  • the polycrystalline material is heated to melting, the polycrystalline material is fully melted and then cooled to condense, and then the temperature is raised again to melt all of it, and this is repeated 3 times to remove the bubbles generated in the melt.
  • the melt is overheated at about 20°C and kept at a constant temperature for 1 hour to obtain a uniformly melted gadolinium strontium phosphate melt;
  • step (3) Take the yttrium strontium phosphate crystal as the seed crystal, and slowly immerse it into the polycrystalline melt of step (3), so that the top of the seed crystal is perpendicular to and just in contact with the melt, and the single crystal is grown;
  • the growth temperature is 1800°C; when the seed crystal is necked, the pulling speed is controlled at 4 ⁇ 4.5mm/h, and the speed is 8-15r/min; when the diameter of the seed crystal is reduced to 1mm, it starts at 0.8°C/ h Slowly lower the temperature, and then put the shoulders; when the shoulders are put, the lifting speed is reduced to 0.4 ⁇ 0.5mm/h, and the rotation speed is 6-8r/min; when the diameter of the crystal shoulder reaches the predetermined size of 20mm, the speed is 0.2°C/h The temperature is raised and lowered at the speed for equal diameter growth; during equal diameter growth, the pulling speed is 0.6mm/h and the rotation speed is 8r/min.
  • the crystal When the crystal grows to a height of 30mm, the crystal is ready to be lifted; the lift-off process is as follows: increase the temperature at a rate of 20°C/h, and when the bottom of the crystal is observed to shrink inward at the rising temperature, increase the pulling speed to 6mm/ h Pull the crystal to separate it from the melt. After the crystal is removed, the crystal is kept at a constant temperature in a temperature field for 1 hour, and the temperature is reduced to room temperature at a rate of 15° C./h to obtain a strontium gadolinium phosphate crystal.
  • the annealing temperature is 1300°C and the annealing time is 24 hours to fully release the thermal stress generated during the growth of Sr 3 Gd(PO 4 ) 3 crystals.
  • the size of the obtained Sr 3 Gd(PO 4 ) 3 crystal is 20 mm in diameter and 30 mm in height; a frequency doubling effect is observed when passing through 2090 nm light. After testing, the crystal has a transmittance of >80% in the 480nm-4100nm band, and the optical uniformity is good.
  • Comparative Example 3 As described in Example 5, the difference is that the raw materials of SrCO 3 , Y 2 O 3 and NH 4 H 2 PO 4 in step (1) are compounded according to the chemical formula Sr 3 Y(PO 4 ) 3 stoichiometric ratio , NH 4 H 2 PO 4 is not excessive. The results showed that: due to the component deviation and delamination phenomenon occurred after the yttrium strontium phosphate raw material was melted, Sr 3 Y(PO 4 ) 3 single crystal could not be grown when the lower seed crystal was pulled. The photo of the growth product is shown in Figure 3. Sr 3 Y(PO 4 ) 3 polycrystalline.
  • Comparative Example 4 The method as described in Example 5, except that: in step (1), the raw materials of SrCO 3 , Y 2 O 3 and NH 4 H 2 PO 4 are stoichiometrically measured according to the chemical formula Sr 3 Y(PO 4 ) 3 Compared with the batching, the NH 4 H 2 PO 4 raw material is further increased by 0.5%.
  • the crystals grown are of poor quality and irregular shapes, as shown in Figure 8. It has been found through research that in this case, the phosphate excess of only 0.5% is not enough to compensate for the deviation of the composition due to the volatilization of phosphorus during crystal growth, resulting in poor crystallinity of yttrium strontium phosphate single crystal.
  • the wafer was processed along the X and Y directions of the physical axis.
  • the thickness direction was X
  • the length direction was Y
  • the width direction was Z.
  • the piezoelectric resonance and anti-resonance peaks of the wafer sample are detected by an impedance analyzer, indicating that the crystal has a piezoelectric effect in the tangential direction. In particular, when the temperature rises to 1000°C, piezoelectric resonance and anti-resonance peaks are still observed, indicating that the crystal can be used as a high-temperature piezoelectric crystal. As shown in Figure 14.
  • the Sr 3 Y(PO 4 )3 crystal prepared in Example 6 is oriented with reference to the physical axis of the piezoelectric, and the wafer is processed along the physical axis X and Z directions.
  • the thickness direction is X
  • the length direction is Z
  • the width direction is X
  • conductive electrode is plated on crystal surface in thickness direction.
  • the piezoelectric resonance and anti-resonance peaks of the wafer sample are detected by an impedance analyzer, indicating that the crystal has a piezoelectric effect in the tangential direction.
  • the piezoelectric resonance peak and anti-resonance peak can also be observed, indicating that the crystal can be used as a high-temperature piezoelectric crystal.
  • the resonant frequency and anti-resonant frequency of the sample appeared at 881.8kHz and 887.8kH, respectively.
  • the Sr 3 Y(PO 4 ) 3 crystal prepared in Example 5 was oriented with reference to the piezoelectric physical axis, and the wafer was processed along the physical axis Z and X directions.
  • the thickness direction is Z
  • the length direction is X
  • the width direction is Y
  • conductive electrode is plated on crystal surface in thickness direction.
  • the piezoelectric resonance and anti-resonance peaks of the wafer sample were detected by an impedance analyzer, indicating that the crystal has a piezoelectric effect in this direction.
  • the crystal cut shape still has piezoelectric activity, so it can be used as a high temperature piezoelectric crystal.
  • the different Sr 3 Y(PO 4 ) 3 crystal cut shapes were raised from room temperature to 1000° C., and it was observed that the crystal still had piezoelectric activity.
  • the resulting impedance analysis spectrum is shown in FIG. 15.
  • the impedance analyzer can detect the piezoelectric resonance and anti-resonance peaks of the series of wafer samples with different Sr 3 Y(PO 4 ) 3 crystal cuts, indicating that the crystal has piezoelectric effect in any direction in space.
  • the crystal cut type also has piezoelectric activity at a temperature of 1000° C., so it can be used as a high-temperature piezoelectric crystal.
  • step (2) Fully mix the raw materials prepared in step (1) and put them into an alumina crucible for the first sintering.
  • the sintering temperature is 900°C and the temperature is kept constant for 10 hours to decompose and remove CO 2 , H 2 O and NH 3 ;
  • step (3) Put the ytterbium barium phosphate polycrystalline material obtained in step (2) into an iridium-gold crucible in a single crystal furnace, evacuate the furnace and fill it with nitrogen as a protective gas to prevent oxidation of the iridium-gold crucible, and use medium frequency induction heating
  • the polycrystalline material is heated to melting, the polycrystalline material is fully melted and then cooled to condense, and then the temperature is raised again to melt all of it, and this is repeated 3 times to remove the bubbles generated in the melt.
  • the melt is overheated at about 20°C and kept at a constant temperature for 1 hour to obtain a uniformly melted barium ytterbium phosphate melt;
  • step (3) Using an iridium rod as a seed crystal, slowly immerse it into the polycrystalline melt of step (3), so that the top of the seed crystal is perpendicular to and just in contact with the melt, and then the single crystal is grown;
  • the growth temperature is 1800°C; when the seed crystal is necked, the pulling speed is controlled at 1 ⁇ 3.5mm/h, and the speed is 6-12r/min; when the diameter of the seed crystal is reduced to 1mm, it starts at 0.5°C/ h Slowly lower the temperature and put the shoulders down; when the shoulders are put down, the pulling speed is reduced to 0.3 ⁇ 0.5mm/h, and the rotation speed is 6-8r/min; when the diameter of the crystal shoulder reaches the predetermined size of 15mm, the speed is 0.3°C/h The temperature is raised and lowered at the speed for equal diameter growth; during equal diameter growth, the pulling speed is 0.5mm/h and the rotation speed is 5r/min.
  • the lift off process is as follows: increase the temperature at a rate of 15°C/h, and when the bottom of the crystal is observed to shrink inward at the rising temperature, increase the pulling speed to 5mm /h Pull the crystal to separate it from the melt. After the crystals are removed, the crystals are kept constant in a temperature field for 1 hour, and the temperature is reduced to room temperature at a rate of 10-30° C./h to obtain barium ytterbium phosphate crystals.
  • the annealing temperature is 1300°C and the annealing time is 48 hours to fully release the thermal stress generated during the growth of Ba 3 Yb(PO 4 ) 3 crystals.
  • the dielectric spectrum and resistivity characteristics of the Ba 3 Yb(PO 4 ) 3 crystal are shown in FIGS. 19 and 20. At 900°C, it not only has low dielectric loss ( ⁇ 1.1), but also has high resistivity ( ⁇ >10 7 (Ohm ⁇ cm)), indicating that Ba 3 Yb(PO 4 ) 3 crystal is in the high-temperature piezoelectric field Has potential applications.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Inorganic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

提供一种光电功能晶体M 3RE(PO 4) 3及其制备方法与应用。所述晶体为非中心对称结构，属于立方晶系-43m点群，其中，M为碱土金属，RE为稀土元素；碱土金属为Ba、Ca或Sr；稀土元素为Y、La、Gd或Yb。M 3RE(PO 4) 3晶体生长方法包括(1)多晶料合成，采用化学计量比的MCO 3、RE 2O 3和含磷化合物并使含磷化合物过量，将原料进行两次烧结，得到M 3RE(PO 4) 3多晶料；(2)多晶料熔化，(3)提拉法晶体生长。所制备的M 3RE(PO 4) 3晶体是高品质单晶，不仅具有较高的光学透过率和较宽的吸收边，而且从室温到熔点无相变，不潮解，具有压电活性和非线性变频特性。

Description

光电功能晶体M 3RE(PO 4) 3及其制备方法与应用 技术领域
本发明涉及光电功能晶体M 3RE(PO 4) 3及其制备方法与应用，属于光电功能晶体技术领域。
背景技术
光电功能晶体材料作为微电子、光电子、通信、航天及现代军事技术等高科技领域中的关键材料受到世界各国的重视。激光和光电子学的发展进一步促进了功能晶体的发展和应用。我国光电功能晶体的研究和应用处于国际前沿，特别是无机非线性光学晶体的研究处于国际领先地位。尽管如此，目前在光电功能晶体领域的国际竞争日益激烈，我国晶体材料领域的研究者仍在不断努力研发新的晶体材料。
光电功能晶体种类繁多，依据其功能主要包括非线性光学晶体、压电晶体、激光晶体、闪烁晶体等。目前可用的光电功能晶体材料有限，急需要探索新型功能晶体材料，以开发新型光电器件，拓展新应用。对于M 3RE(PO 4) 3结构类型的化合物的研究，目前主要集中在掺杂不同稀土离子的纳米荧光粉的合成及发光性能研究方面。例如，2008年同济大学Xu Shuai等采用溶液凝胶法制备Eu 3+、Tb 3+、Ce 3+掺杂的Sr 3Y(PO 4) 3粉体，参见Journal of Optoelectronics And Advanced Materials Vol.10,No10,October 2008,p2727-2731。再如，在荧光粉粉体合成方面，2013年长春应化所Guo Ning等人采用高温固相法合成立方相硅铋石型Ba 3Gd(PO 4) 3荧光粉，并研究了Eu 2+、Mn 2+掺杂后的发光性能。参见Chem Phys Chem 2013,14,192-197。虽然部分M 3RE(PO 4) 3类型的化合物粉体被成功制备，但有关M 3RE(PO 4) 3构型的单晶及生长工艺尚鲜有报道。
关于磷酸钇锶晶体，迄今为止未见有研究报道。少量涉及Sr 3Y(PO 4) 3的研究仅限于掺杂不同稀土离子的Sr 3Y(PO 4) 3纳米荧光粉。在Sr 3Y(PO 4) 3粉体合成方面，2008年同济大学Xu Shuai等采用溶液凝胶法制备Eu 3+、Tb 3+、Ce 3+掺杂的Sr 3Y(PO 4) 3，其研究目的集中在掺杂稀土离子的纳米荧光粉发光性质中，并未进行单晶的生长与光电性质及应用研究。参见Journal of Optoelectronics And Advanced Materials Vol.10,No10,October 2008,p2727-2731。 申请人为了开发一种新的光电功能晶体材料，特提出本发明。
发明内容
为了弥补现有技术的不足，本发明提供一种通式为M 3RE(PO 4) 3的系列光电功能晶体及其制备方法。
本发明还提供一种磷酸钇锶晶体。
本发明还提供所述磷酸钇锶晶体的应用。
术语说明：
磷酸钇锶晶体，化学式为Sr 3Y(PO 4) 3，本领域的习惯表达式简写为SYP，Sr 3Y(PO 4) 3和SYP表达方式在本发明中具有相同的含义。
室温：具有本领域公知的含义，一般是指25±5℃。
提脱晶体：将晶体提离熔液面。
发明概述
本发明首次采用提拉法生长出具有非中心对称结构的M 3RE(PO 4) 3系列晶体。该M 3RE(PO 4) 3晶体属于立方晶系-43m点群，不仅具有较高的光学透过率和较宽的吸收边，而且从室温到熔点无相变，具有压电活性和非线性变频特性，在光电功能器件领域具有应用前景。
发明详述
本发明的技术方案如下：
通式为M 3RE(PO 4) 3的光电功能晶体，所述晶体为非中心对称结构，属于立方晶系-43m点群，其中，M为碱土金属，RE为稀土元素。
根据本发明优选的，所述的碱土金属为Ba、Ca或Sr。
根据本发明优选的，所述的稀土元素为Y、La、Gd或Yb。
本发明的稀土元素不仅限于Y、La、Gd或Yb这四种，对其他的稀土元素也同样适用，也同样具有良好的机械性质，不容易潮解和一致熔融的特点，由于其非中心对称结构特点，适用非线性光学晶体和压电晶体。作为非线性光学晶体和压电晶体的应用的优势在于晶体熔点高，且从室温到熔点无相变，化学性质稳定，不潮解，同时具有非中心对称结构且高熔点的化合物，在高温压电和宽温区非线性光学领域具有明显优势。
优选的，所述M 3RE(PO 4) 3光电功能晶体选自下列之一种：
Ba 3Y(PO 4) 3晶体，Ba 3La(PO 4) 3晶体，Ba 3Yb(PO 4) 3晶体，Ca 3Gd(PO 4) 3晶体，Sr 3Y(PO 4) 3晶体，Sr 3La(PO 4) 3晶体，Sr 3Gd(PO 4) 3晶体；对应的化学名称依次为：磷酸钇钡晶体，磷酸镧钡晶体，磷酸镱钡晶体，磷酸钆钙晶体，磷酸钇锶晶体，磷酸镧锶晶体，磷酸钆锶晶体。
进一步的，上述晶体结构参数如下：
Ba 3Y(PO 4) 3晶体：立方晶系-43m点群；空间群I-43d；晶胞参数为
Figure PCTCN2020095244-appb-000001
密度＝4.553g/cm 3；
Ba 3La(PO 4) 3晶体：立方晶系-43m点群；空间群I-43d；晶胞参数为
Figure PCTCN2020095244-appb-000002
密度＝4.77g/cm 3；
Ba 3Yb(PO 4) 3晶体：立方晶系-43m点群；空间群I-43d；晶胞参数为
Figure PCTCN2020095244-appb-000003
密度＝5.149g/cm 3；
Ca 3Gd(PO 4) 3晶体：立方晶系-43m点群；空间群I-43d；晶胞参数为
Figure PCTCN2020095244-appb-000004
密度＝3.9g/cm 3；
Sr 3Y(PO 4) 3晶体：立方晶系-43m点群；空间群I-43d；晶胞参数为
Figure PCTCN2020095244-appb-000005
密度＝4.093g/cm 3；
Sr 3La(PO 4) 3晶体：立方晶系-43m点群；空间群I-43d；晶胞参数为
Figure PCTCN2020095244-appb-000006
密度＝4.3g/cm 3；
Sr 3Gd(PO 4) 3晶体：立方晶系-43m点群；空间群I-43d；晶胞参数为
Figure PCTCN2020095244-appb-000007
密度＝4.526g/cm 3。
根据本发明，所述M 3RE(PO 4) 3的光电功能晶体，光谱分析测得Ba 3Y(PO 4) 3晶体、Ba 3La(PO 4) 3晶体、Ca 3Gd(PO 4) 3晶体、Sr 3La(PO 4) 3晶体、Sr 3Gd(PO 4) 3晶体在325nm-4302nm波段分别各自有>70％的高光学透过率。
根据本发明，所述M 3RE(PO 4) 3的光电功能晶体，采用阻抗法测得Ba 3Y(PO 4) 3晶体、Ba 3La(PO 4) 3晶体、Ba 3Yb(PO 4) 3晶体、Ca 3Gd(PO 4) 3晶体、Sr 3La(PO 4) 3晶体、Sr 3Gd(PO 4) 3晶体分别各自的有效压电常数d eff>6pC/N，表明其具有压电活性。
一种磷酸钇锶晶体，化学式为Sr 3Y(PO 4) 3，该晶体为非中心对称结构，属于立方晶系-43m点群，晶胞参数为
Figure PCTCN2020095244-appb-000008
α＝β＝γ＝90°。该晶体从室温到熔点无相变。
进一步的，所述磷酸钇锶晶体熔点基本上在1850℃，且从室温到熔点无相变。
更进一步的，所述的磷酸钇锶晶体，光谱分析测得该晶体在480nm-4100nm波段有>80％ 的高光学透过率。
更进一步的，所述磷酸钇锶晶体，用阻抗法测得该晶体的有效压电常数为d 14＝6-10pC/N。
更进一步的，所述磷酸钇锶晶体，利用阻抗法测量并计算得到该晶体的有效机电耦合系数为k 14＝10-30％。
本发明中，所述M 3RE(PO 4) 3的光电功能晶体的生长方法，包括：
(1)多晶料合成
根据化学式通式M 3RE(PO 4) 3，采用化学计量比准确称取原料MCO 3、RE  2O 3和含磷化合物，在此基础上进一步使含磷化合物过量其总质量1.5-10％质量百分比(以化学计量比的含磷化合物的质量计)；
将上述称量好的原料进行研磨和混合均匀后进行一次烧结，优选装入陶瓷坩埚内进行烧结；烧结温度为800℃-950℃并且恒温10-15小时，然后降温，将一次烧结的原料进行研磨细化并混合均匀，压成圆饼状料块进行二次烧结，烧结温度为1200-1400℃并且恒温20-40小时，经固相反应得到M 3RE(PO 4) 3多晶料；
(2)多晶料熔化
将步骤(1)合成的M 3RE(PO 4) 3多晶料放入单晶生长炉内的铱金坩埚中，炉内抽真空并且充入保护气体氮气或者氩气，采用中频感应加热方式将M 3RE(PO 4) 3多晶料升温至熔化，多晶料全熔后降温使其凝结，然后再次升温使其全部熔化，如此重复若干次，排净熔体中产生的气泡；然后再将熔体过热10-20℃，恒温0.5-2小时，得到熔化均匀的M 3RE(PO 4) 3熔液；
(3)提拉法晶体生长
采用铱金棒或M 3RE(PO 4) 3晶体作为籽晶，将籽晶下到M 3RE(PO 4) 3熔液液面，使籽晶底端与熔液垂直且刚好接触，开始进行单晶生长；单晶生长工艺条件如下：生长温度1800-1950℃；籽晶收颈时提拉速度1-5mm/h、放肩时提拉速度降至0.2-1mm/h，等径生长提拉速度为0.5-1mm/h；晶体生长到所需尺寸时提脱晶体。
进一步优选的，提脱晶体后，将晶体在温场内恒温0.5-1h,然后以5-30℃/h的速率降至室温，得到M 3RE(PO 4) 3晶体。
更进一步的，从单晶生长炉内取出M 3RE(PO 4) 3晶体后，将其进行退火处理，退火温度为1200-1400℃。优选退火时间为24-48小时，使M 3RE(PO 4) 3晶体生长过程中产生的热应力得到充分释放。优选的，将M 3RE(PO 4) 3晶体放到高温马弗炉内进行退火处理。
根据本发明优选的，步骤(1)中，所述含磷化合物为NH 4H 2PO 4或P 2O 5。进一步优选，使含磷化合物过量其总质量3-6％质量百分比。本发明步骤(1)所述原料均采用纯度大于99.9％的高纯度原料进行配料；这些原料均可通过常规途径购买。
根据本发明优选的，步骤(1)中，所述原料的一次烧结、二次烧结均在陶瓷坩埚内进行。其中，一次烧结的目的是分解和去除CO 2、NH 3和H 2O，提高合成多晶料的纯度。
本发明采用熔体提拉法进行晶体生长，当使用铱金坩埚时，为防止铱金在高温下发生氧化，因此需要在氮气或者氩气等惰性气体气氛保护下进行晶体的生长。特别地，氮气或者惰性气体的体积分数为90％-95％。
根据本发明，步骤(2)中对多晶料熔化后，经反复多次降温凝结-升温熔化，使熔体中产生的气泡彻底排净，以降低晶体生长缺陷(气泡和包裹体等)提高晶体生长质量。优选所述降温凝结-升温熔化反复3-4次为宜。
根据本发明优选的，步骤(3)中晶体生长经过收颈、放肩、等径生长和提脱晶体四个阶段；其中，收颈过程中，提拉速度控制为1-8mm/h，当籽晶直径收细至0.5-2.0mm时，开始以0.5-5℃/h缓慢降温，进行放肩；放肩阶段，将提拉速度降至0.2-1mm/h；当晶体肩部的直径达到预定尺寸时，再以0-5℃/h的速度升温或降温，控制温度在1800-1950℃，进行等径生长；当晶体提拉至所需高度时开始提脱晶体。
进一步优选的，所述提脱晶体工艺条件为：以10-50℃/h速率缓慢升高温度，当晶体底部有向内收缩的趋势时，将提拉速度提高至5-20mm/h，提拉晶体使之与熔液脱离。
根据本发明优选的，晶体生长尺寸一般为直径15-30mm，高度20-50mm。该尺寸的M 3RE(PO 4) 3晶体生长所需时间一般在4-7天。所述晶体的尺寸是指晶体常规直径和总高度。
本发明所述的磷酸钇锶晶体采用提拉法生长，其技术关键在于原料的配比，尤其是过量的磷酸根原材料的使用，以及多晶料的合成，并在适当的温度和特定的温场条件下获得满足非线性光学和压电功能材料应用需要的高光学质量单晶。
根据本发明，所述磷酸钇锶晶体的制备方法，包括：
将含Sr化合物、含Y化合物和含P化合物的原料混合、烧结，合成磷酸钇锶多晶料，升温使磷酸钇锶多晶料熔化，并经反复降温凝结、升温熔化若干次，得到熔化均匀的磷酸钇锶熔液；
其中，根据化学式Sr 3Y(PO 4) 3，所述原料中含Sr化合物、含Y化合物和含P化合物在化学计量比基础上，按含P化合物质量计使其过量2.5-7.5％质量百分比；
采用铱金棒或磷酸钇锶晶体作为籽晶，使所述籽晶底端与所述磷酸钇锶熔液刚好接触，采用提拉法进行单晶生长，单晶生长温度1700-1850℃，籽晶收颈时提拉速度2-5mm/h，放肩时提拉速度降至0.2-2mm/h，等径生长提拉速度为0.2-1mm/h；晶体生长到所需尺寸时提脱晶体，并在温场内恒温0.5-1h，再以不大于30℃/h的速率降至室温，得到磷酸钇锶晶体。
优选地，所述含Sr化合物、含Y化合物和含P化合物各自独立地选自相应的氧化物、碳酸盐、磷酸盐、卤化物、硝酸盐、草酸盐和硼酸盐中的至少一种，且含有Sr、Y、P元素的化合物不可以同时为卤化物。
进一步优选的，所述含Sr化合物选自相应的氧化物、碳酸盐、卤化物、硫酸盐或硝酸盐化合物；所述含Y化合物选自相应的氧化物、硝酸盐或磷酸盐；所述含P化合物选自相应的氧化物或磷酸盐。最优选的，所述含Sr化合物为SrCO 3，含Y化合物为Y 2O 3，含P化合物NH 4H 2PO 4或P 2O 5。
进一步优选的，上述原料中含Sr化合物、含Y化合物和含P化合物在化学计量比基础上，按含P化合物质量计使其过量3-5％质量百分比。
根据本发明优选的，制备磷酸钇锶多晶料时，原料混合后进行两次高温烧结，以保证晶体的生长质量。所述原料混合、烧结按以下方法进行：将称量好的原料进行研磨并混合均匀后进行一次烧结，烧结温度为800℃-950℃，恒温10-15小时，以分解和去除CO 2、NH 3和H 2O；然后降至室温，将一次烧结的原料进行充分研磨细化并混合均匀，压成圆饼状料块进行二次烧结，烧结温度为1200℃-1400℃，恒温20-40小时，原料经固相反应得到磷酸钇锶多晶料。进一步优选的，上述烧结是将原料置于陶瓷坩埚放入烧结炉中进行。
根据本发明优选的，所述磷酸钇锶多晶料熔化后，反复降温凝结、升温熔化3-4次。对多晶料多次升温熔化再降温凝结，如此反复多次，使熔体中产生的气泡彻底排净，以降低晶体生长缺陷(气泡和包裹体等)提高晶体生长质量。进一步的，所述磷酸钇锶多晶料熔化后反复降温凝结、升温熔化若干次后，再将熔体过热10-20℃，恒温0.5-2小时，使其更进一步熔化均匀。
根据本发明优选的，当使用铱金坩埚时，需要在氮气或者氩气等惰性气氛保护下进行晶体的生长，以防止铱金在高温下发生氧化。特别地，单晶生长炉内氮气或者惰性气体的体积分数为90％-95％。
由于磷酸钇锶晶体的熔点大于铂金熔点(1772℃)，首次生长磷酸钇锶晶体时需采用熔点更高的铱金作为籽晶；制得磷酸钇锶晶体后，选用磷酸钇锶晶体作为籽晶即可。
根据本发明，所述晶体生长过程包括收颈、放肩、等径生长和提脱晶体四个阶段；优选的，收颈阶段中提拉速度控制为2-5mm/h，当籽晶直径收细至0.5-2.0mm时，开始以0.5-5℃/h缓慢降温，进行放肩；放肩阶段将提拉速度降至0.2-2mm/h，当晶体肩部的直径达到所需晶体直径时，再以0-5℃/h的速度升温或降温，进行等径生长,等径生长时提拉速度为0.4-0.7mm/h,转速为6-8r/min；当晶体提拉至所需晶体高度时进行提脱晶体。
进一步优选的，所述提脱晶体方法如下：以10-50℃/h的速率缓慢升高温度，当晶体底部有向内收缩的趋势时，将提拉速度提高至5-20mm/h，提拉晶体使之与熔液脱离。
根据本发明优选的，本发明的磷酸钇锶晶体生长方法还包括退火步骤；所述退火步骤包括：在磷酸钇锶晶体生长完成后，将磷酸钇锶晶体取出，置于高温马弗炉内进行退火，退火温度为1200-1400℃，退火时间为24-48小时。使Sr 3Y(PO 4) 3晶体生长过程中产生的热应力得到充分释放。
根据实际需要，本发明生长Sr 3Y(PO 4) 3晶体尺寸一般为：高度20-50mm，直径15-30mm。该尺寸的Sr 3Y(PO 4) 3晶体生长所需时间一般在4-5天。此处所述晶体的尺寸是指晶体常规直径和总高度。
一个优选的实施方案，所述磷酸钇锶晶体的制备方法，包括步骤如下：
(1)配料
根据磷酸钇锶的化学式Sr 3Y(PO 4) 3，采用化学计量比称取原料SrCO 3、Y 2O 3和NH 4H 2PO 4，然后使NH 4H 2PO 4过量3-7％(以磷酸盐总质量计)；
(2)合成多晶料
将步骤(1)称量好的原料进行研磨和混合均匀后装入陶瓷坩埚内进行一次烧结，烧结温度为800℃-950℃并且恒温10-15小时；然后降至室温，将一次烧结的原料进行充分研磨细化并混合均匀，压成圆饼状料块，放入陶瓷坩埚内进行二次烧结，烧结温度为1200℃-1400℃并且恒温20-40小时，此阶段为固相反应，得到纯的磷酸钇锶多晶料；
(3)多晶料熔化
将步骤(2)合成的磷酸钇锶多晶料放入单晶生长炉内的铱金坩埚中，炉内抽真空并充入保护气体氮气或者氩气，采用中频感应加热方式将磷酸钇锶多晶料升温至熔化，所述多晶料全熔后降温使其凝结，然后再次升温使其全部熔化，如此重复若干次，排净熔体中产生的气泡；然后再将熔体过热10-20℃，恒温0.5-2小时，使其得到熔化均匀的磷酸钇锶熔液；
(4)提拉法晶体生长
采用铱金棒或磷酸钇锶晶体作为籽晶，将籽晶垂直下降到步骤(3)的磷酸钇锶熔液中，使籽晶的底端与熔液垂直且刚好接触，开始进行单晶生长，单晶生长温度1700-1850℃；所述晶体生长过程包括收颈、放肩、等径生长和提脱晶体四个阶段；收颈阶段提拉速度为2-5mm/h，当籽晶直径收细至0.5-2.0mm时开始以0.5-5℃/h缓慢降温，进行放肩；放肩阶段将提拉速度降至0.2-2mm/h，当生长的晶体肩部的直径达到所需晶体直径时，再以0-5℃/h的速度升温或降温，进行等径生长；当晶体提拉至所需晶体高度时进行提脱晶体；提脱晶体后，将晶体在温场内恒温0.5-1h,然后以5-30℃/h的速率降至室温，得到磷酸钇锶晶体；
(5)退火处理
从单晶炉内取出磷酸钇锶晶体后，需要将其放到高温马弗炉内进行退火，退火温度为1200-1400℃，退火时间为24-48小时。
根据本发明，进一步优选的，收颈阶段提拉速度为3-5mm/h,转速为8-15r/min；放肩阶段提拉速度降至0.3-0.8mm/h,转速为6-10r/min；等径生长时提拉速度为0.5-0.6mm/h,转速为8r/min。
根据本发明优选的，所述原料均采用纯度大于99.9％的高纯度原料进行配料；晶体生长所需的原料均可通过常规途径购买。
本发明提供的磷酸钇锶Sr 3Y(PO 4) 3是一种新型光电功能晶体，属于立方晶系-43m点群，具有非中心对称晶体结构特征，具有良好的机械性质和一致熔融的特点，不容易潮解，能够采用提拉法在较短时间内生长出大尺寸优质单晶；由于其非中心对称结构特点，适合用作非线性光学晶体和压电晶体。
本发明提供Sr 3Y(PO 4) 3晶体的如下用途：
本发明Sr 3Y(PO 4) 3晶体作为非线性光学晶体和压电晶体的应用。优选的，所述Sr 3Y(PO 4) 3晶体作为激光基质晶体、非线性频率变化晶体、高温压电晶体的用途。
根据本发明所述的Sr 3Y(PO 4) 3晶体作为非线性光学晶体和压电晶体的应用，进一步详细说明如下：
1、作为非线性光学晶体的应用：
采用X射线定向仪对Sr 3Y(PO 4) 3晶体的结晶学轴定向；将磷酸钇锶晶体通过2090nm激光时可以观察到倍频效应，该晶体能够实现对2090nm波长激光的有效倍频。其中，选用AgGaS 2晶体作为比较，如图12所示。
2、作为压电晶体的应用：
采用阻抗法，测得晶体的有效压电常数可达d 14＝6-10pC/N；利用阻抗分析法，测量计算得到晶体的有效机电耦合系数可达k 14＝10-30％。将不同的Sr 3Y(PO 4) 3晶体切型从室温升至1000℃，观测得到该晶体依然具有压电活性，如图14所示，表明该晶体在压电领域特别是高温压电领域具有潜在应用。其中，所述Sr 3Y(PO 4) 3晶体切型是XZ、XY或ZX切型，或者XZ、XY、ZX切型，分别绕X或Y或Z旋转后得到的晶体切型。
进一步的，本发明所述的Sr 3Y(PO 4) 3晶体在制备非线性光学功能器件、压电器件中的应用；优选地，所述非线性光学功能器件包括激光频率变换器、光参量放大器、光参量振荡器或拉曼频率变换器；优选地，所述压电器件包括压电谐振器、振荡器、滤波器、压电换能器、压电式压力传感器、声换能器或超声波传感器。
上述方法中没有明确限定的，均按本领域现有技术即可。
本发明的技术特点和优良效果：
1、本发明人研究发现M 3RE(PO 4) 3晶体区别于其他同构型化合物，其一致熔融区非常窄，必须采用磷酸盐或五氧化二磷过量其总质量的1.5-10％的方法补偿晶体生长中由于五氧化二磷的挥发造成的组分偏离，获得优质单晶，满足光学高质量晶体的要求。如果采用化学计量比配料，则无法长出晶体。
2、本发明的方法中制备多晶料时，将原料混合后进行两次高温烧结，先在低于熔点温度下进行一次烧结以分解和去除CO 2、NH 3和H 2O；然后在固相反应温度下进行二次烧结，制备出高纯度的多晶料，以保证晶体的生长质量。生长晶体时需在全熔点下籽晶，晶体生长阶段的技术关键为各阶段的提拉速度和转数需要特别加以控制，以获得高质量的单晶。本发明采用提拉法能够在较短时间内生长出大尺寸优质光电功能M 3RE(PO 4) 3单晶。
3、本发明提供了新型系列光电功能M 3RE(PO 4) 3晶体，具有良好的机械性质，不容易潮解和一致熔融的特点，由于其非中心对称结构特点，适用非线性光学晶体和压电晶体。作为非线性光学晶体和压电晶体的应用的优势在于晶体的熔点高，且从室温到熔点无相变，化学性质稳定，不潮解，是难得的同时具有非中心对称结构且高熔点的化合物，因此在高温压电和宽温区非线性光学领域具有明显优势。此外，该系列晶体熔体粘度小，晶体生长过程中容易排杂，生长速度快，便于获得高质量的单晶，有利于后续应用研发。
4、本发明人意外发现，磷酸钇锶晶体与其它同构型化合物不同，其一致熔融区非常窄。本发明创造性地采用含P化合物(磷酸盐或五氧化二磷)过量总质量的2.5-7.5％的方法， 获得优质磷酸钇锶单晶，满足光学高质量的要求。经研究发现如果按常规采用化学计量比配料的话则无法长出磷酸钇锶晶体，磷酸盐或五氧化二磷过量偏低时，所得磷酸钇锶晶体品质也达不到光学高质量的要求。
5、本发明提供了一种新型光电功能晶体Sr 3Y(PO 4) 3。Sr 3Y(PO 4) 3晶体作为一种非线性光学晶体和压电晶体的应用的优势在于晶体的熔点高于1800℃，且从室温到熔点无相变，化学性质稳定，不潮解，是难得的同时具有非中心对称结构且高熔点的化合物，因此在高温压电和宽温区非线性光学领域具有明显优势。此外，该晶体熔体粘度小，晶体生长过程中容易排杂，生长速度快，便于获得高质量的单晶，有利于后续应用研发。
附图说明
图1是M 3R(PO 4) 3系列晶体的XRD物相图。
图2是实施例1生长得到的Ba 3Y(PO 4) 3晶体照片，
图3是实施例2生长得到的Ba 3La(PO 4) 3晶体照片，
图4是实施例3生长得到的Ca 3Gd(PO 4) 3晶体照片。
图5是实施例1的Ba 3Y(PO 4) 3晶体透过光谱。
图6是实施例1的Ba 3Y(PO 4) 3晶体的介电谱
图7是对比例1所得产物的照片，按化学计量比配料得到的Ba 3Y(PO 4) 3多晶。
图8是对比例2所得产物的照片，得到的Ca 3Gd(PO 4) 3晶体光学品质不好。
图9是实施例5生长得到的Sr 3Y(PO 4) 3晶体照片。
图10是Sr 3Y(PO 4) 3晶体的X-射线衍射图谱。
图11是对比例3的方法长出的产物的照片。
图12是实施例5的Sr 3Y(PO 4) 3晶体2090nm倍频数据。AgGaS 2晶体作为对比。横坐标是磷酸钇锶晶体和硫镓银晶体样品的粉末粒径，纵坐标为相对强度。
图13是实施例5的Sr 3Y(PO 4) 3晶体透过光谱。
图14是实施例7的Sr 3Y(PO 4) 3晶体XY切型的介电谱。
图15是实施例9的Sr 3Y(PO 4) 3晶体ZX切型压电效应产生的阻抗相角图谱。
图16是对比例4生长的Sr 3Y(PO 4) 3晶体。
图17是实施例11生长得到的Ba 3Yb(PO 4) 3晶体照片。
图18是实施例11的Ba 3Yb(PO 4) 3晶体的X-射线衍射图谱。
图19是实施例11的Ba 3Yb(PO 4) 3晶体的介电谱。
图20是实施例11的Ba 3Yb(PO 4) 3晶体的电阻率图谱。
具体实施方式
下面结合具体实施例和附图对本发明作进一步说明，但不局限于此。实施例中1-6的原料纯度大于99.9％。
实施例1、磷酸钇钡晶体的制备
(1)以BaCO 3、Y 2O 3和NH 4H 2PO 4为原料，按照磷酸钇钡的化学式Ba 3Y(PO 4) 3，采用化学计量比配料，所不同的是，磷酸盐过量磷酸二氢铵总质量的5％；
(2)将步骤(1)配好的原料充分混合均匀后装入氧化铝坩埚内，放在马弗炉内进行第一次烧结，烧结温度为850±50℃并恒温12小时，去除原料中的CO 2、NH 3和H 2O；
降温，将第一次烧结的原料研磨细化后再次混合均匀，用圆柱形模具压成料块，放入氧化铝坩埚内进行固相反应，烧结温度为1350℃并恒温40小时，得到所述的磷酸钇钡多晶原料；
(3)把步骤(2)中合成的磷酸钇钡多晶原料放入单晶炉内的铱金坩埚中，炉内抽真空并充入氮气作为保护气体，用中频感应加热将多晶原料升温至熔化，多晶料全熔后降温使其凝结，然后再次升温使其全部熔化，如此反复3次，以排除熔体中产生的气泡。之后将熔体过热20℃，恒温0.5小时后，得到熔化均匀的磷酸钇钡熔液；
(4)将磷酸钇钡多晶棒作为籽晶，缓慢浸入到步骤(3)的多晶熔液中，使籽晶的顶端与熔液垂直且刚好接触为止，开始进行单晶的生长；
单晶生长工艺条件：温度1850±50℃；籽晶收颈时控制提拉速度5mm/h，当籽晶直径收细至约1mm时，开始以1-4℃/h缓慢降温，进行放肩；放肩时提拉速度降至0.5-1mm/h；当晶体肩部的直径达到预定尺寸22mm左右时，再以1-4℃/h的速度升降温，进行等径生长；等径生长时提拉速度0.5-0.7mm/h，晶体生长至所需尺寸40mm左右高度时提脱晶体，先以15-20℃/h速率缓慢升高温度，当升高温度观察到晶体底部有向内收缩的趋势时，将拉速提高至10-15mm/h提拉晶体使之与熔液脱离。
提脱晶体后，将晶体在温场中恒温45min，然后以10℃/h速率降至室温，得到磷酸钇钡晶体。
(5)取出晶体后，将其放到高温电阻炉内进行退火，退火温度为1300℃，退火时间为24小时，使Ba 3Y(PO 4) 3晶体生长过程中产生的热应力充分释放。
所得Ba 3Y(PO 4) 3晶体如图2所示，光学品质好。
实施例2、磷酸镧钡晶体的制备
(1)以BaCO 3、La 2O 3和NH 4H 2PO 4为晶体生长原料，按照磷酸镧钡的化学式Ba 3La(PO 4) 3，采用化学计量比进行配料，进一步的使NH 4H 2PO 4过量磷酸盐总质量的5％；
(2)将步骤(1)配好的原料充分混合均匀后装入氧化铝坩埚内，进行第一次烧结，烧结温度为900℃并且恒温10小时，分解并去除CO 2、H 2O和NH 3；
降温，将第一次烧结好的原料充分研磨再次混合均匀后，压成料块，放入氧化铝陶瓷坩埚内进行固相反应，烧结温度为1400℃并且恒温30h，得到所述的磷酸镧钡多晶原料；
(3)把步骤(2)中得到的磷酸镧钡多晶料放入单晶炉内的铱金坩埚中，炉内抽真空并且充入氮气作为保护气体防止铱金坩埚氧化，用中频感应加热将多晶原料升温至熔化，多晶料全熔后降温使其凝结，然后再次升温使其全部熔化，如此反复2-4次，排除熔体中产生的气泡。之后将熔体过热15℃左右，恒温1小时后，得到熔化均匀的磷酸镧钡熔液；
(4)将铱金棒作为籽晶，缓慢浸入到步骤(3)的多晶熔液中，使籽晶的顶端与熔液垂直且刚好接触为止，开始进行单晶的生长；
单晶生长工艺条件：生长温度1850±50℃；籽晶收颈时提拉速度控制6mm/h，当籽晶直径收细至约1.5mm时，开始以5℃/h缓慢降温，进行放肩；放肩时提拉速度降至0.3mm/h；当晶体肩部的直径达到预定尺寸30mm左右时，再以0-5℃/h的速度进行升降温，进行等径生长；等径生长时提拉速度为0.6mm/h，晶体生长至所需尺寸50mm左右高度时准备提脱晶体；其提脱过程如下：以20℃/h速率缓慢升高温度，当升高温度观察到晶体底部有向内收缩的趋势时，将拉速提高至15mm/h提拉晶体使之与熔液脱离。
(5)提脱晶体后，将晶体在温场中恒温1小时，然后以10℃/h速率降至室温，得到磷酸镧钡晶体。所得Ba 3La(PO 4) 3晶体如图3所示，光学品质好。
晶体退火处理同实施例1。
实施例3、磷酸钆钙晶体的制备
(1)以CaCO 3、Gd 2O 3和NH 4H 2PO 4为原料，按照磷酸钆钙的化学式Ca 3Gd(PO 4) 3，采用化学计量比配料，所不同的是，磷酸盐过量磷酸二氢铵总质量的3.5％；
(2)将步骤(1)配好的原料充分混合均匀后装入氧化铝坩埚内，放在马弗炉内进行第一次烧结，烧结温度为900℃并恒温13小时，去除原料中的CO 2、NH 3和H 2O；
降温，将第一次烧结的原料研磨细化后再次混合均匀，用圆柱形模具压成料块，放入氧化铝坩埚内进行固相反应，烧结温度为1350℃/并恒温30小时，得到所述的磷酸钆钙多 晶原料；
(3)把步骤(2)中合成的磷酸钆钙多晶原料放入单晶炉内的铱金坩埚中，炉内抽真空并充入氮气作为保护气体，用中频感应加热将多晶原料升温至熔化，多晶料全熔后降温使其凝结，然后再次升温使其全部熔化，如此反复3次，以排除熔体中产生的气泡。之后将熔体过热20℃，恒温0.5小时后，得到熔化均匀的磷酸钆钙熔液；
(4)将铱金棒作为籽晶，缓慢浸入到步骤(3)的多晶熔液中，使籽晶的顶端与熔液垂直且刚好接触为止，开始进行单晶的生长；
单晶生长工艺条件：温度1800±50℃；籽晶收颈时提拉速度控制在5mm/h，当籽晶直径收细至1mm左右时，开始以3℃/h缓慢降温，进行放肩；放肩时提拉速度降至0.3-1mm/h；当晶体肩部的直径达到预定尺寸15-25mm时，再以1-4℃/h的速度升降温，进行等径生长；等径生长时提拉速度为0.5mm/h，晶体生长至所需尺寸30-50mm高度时提脱晶体，先以25℃/h速率缓慢升高温度，当升高温度观察到晶体底部有向内收缩的趋势时，将拉速提高至15-20mm/h提拉晶体使之与熔液脱离。
提脱晶体后，将晶体在温场中恒温45min，然后以10℃/h速率降至室温，得到磷酸钆钙晶体。所得Ca 3Gd(PO 4) 3晶体如图4所示，光学品质好。
晶体退火处理同实施例1。
实施例4、磷酸镧锶晶体的制备
(1)以SrCO 3、La 2O 3和NH 4H 2PO 4为原料，按照磷酸镧锶的化学式Sr 3La(PO 4) 3，采用化学计量比配料，所不同的是，磷酸盐过量磷酸二氢铵总质量的3％；
(2)将步骤(1)配好的原料充分混合均匀后装入氧化铝坩埚内，放在马弗炉内进行第一次烧结，烧结温度为850℃并恒温15小时，去除原料中的CO 2、NH 3和H 2O；
降温，将第一次烧结的原料研磨细化后再次混合均匀，用圆柱形模具压成料块，放入氧化铝坩埚内进行固相反应，烧结温度为1300-1400℃并恒温20-30小时，得到所述的磷酸镧锶多晶原料；
(3)把步骤(2)中合成的磷酸镧锶多晶原料放入单晶炉内的铱金坩埚中，炉内抽真空并充入氮气作为保护气体，用中频感应加热将多晶原料升温至熔化，多晶料全熔后降温使其凝结，然后再次升温使其全部熔化，如此反复3次，以排除熔体中产生的气泡。之后将熔体过热20℃，恒温0.5小时后，得到熔化均匀的磷酸镧锶熔液；
(4)将铱金棒作为籽晶，缓慢浸入到步骤(3)的多晶熔液中，使籽晶的顶端与熔液垂 直且刚好接触为止，开始进行单晶的生长；
单晶生长工艺条件：温度1800-1900℃；籽晶收颈时提拉速度控制在6mm/h，当籽晶直径收细至1mm左右时，开始以1-3℃/h缓慢降温，进行放肩；放肩时提拉速度降至0.4mm/h；当晶体肩部的直径达到预定尺寸15-25mm时，再以1-4℃/h的速度升降温，进行等径生长；等径生长时提拉速度0.6mm/h，晶体生长至所需尺寸20-35mm高度时提脱晶体，先以20℃/h速率缓慢升高温度，当升高温度观察到晶体底部有向内收缩的趋势时，将拉速提高至10-15mm/h提拉晶体使之与熔液脱离。
提脱晶体后，将晶体在温场中恒温45min，然后以10℃/h速率降至室温，得到磷酸镧锶晶体。晶体退火处理同实施例1。
对比例1、按化学计量比配料进行磷酸钇钡晶体的制备
如实施例1所述，所不同的是，步骤(1)中的以BaCO 3、Y 2O 3和NH 4H 2PO 4为晶体生长原料，按照磷酸钇钡的化学式Ba 3Y(PO 4) 3，采用化学计量比进行配料，NH 4H 2PO 4不过量。结果显示：因磷酸钇钡原料熔化后发生组分偏离出现分层现象，下籽晶提拉时无法长出Ba 3Y(PO 4) 3单晶，生长产物照片如图7所示，该产物为Ba 3Y(PO 4) 3多晶。
对比例2、NH 4H 2PO 4过量0.5％，磷酸钆钙晶体的制备
如实施例3所述的方法，所不同的是：步骤(1)中CaCO 3、Gd 2O 3和NH 4H 2PO 4原料按照化学式Ca 3Gd(PO 4) 3化学计量比进行配料，进一步的使NH 4H 2PO 4原料过量0.5％质量百分比。所生长出的晶体品质差，如图8所示。经研究发现该例中磷酸盐仅过量0.5％不足以补偿晶体生长中由于磷的挥发造成的组分偏离，从而使得磷酸钆钙单晶结晶性差。
实施例5、磷酸钇锶晶体的制备
(1)以SrCO 3、Y 2O 3和NH 4H 2PO 4为晶体生长原料，按照磷酸钇锶的化学式Sr 3Y(PO 4) 3，采用化学计量比进行配料，进一步的使NH 4H 2PO 4过量磷酸盐总质量的3％；
(2)将步骤(1)配好的原料充分混合均匀后装入氧化铝坩埚内，进行第一次烧结，烧结温度为900℃并且恒温10小时，分解并去除CO 2、H 2O和NH 3；
降温，将一次烧结好的原料充分研磨再次混合均匀后，压成料块，放入氧化铝陶瓷坩埚内进行固相反应，烧结温度为1250℃并且恒温48h，得到所述的磷酸钇锶多晶原料；
(3)把步骤(2)中得到的磷酸钇锶多晶料放入单晶炉内的铱金坩埚中，炉内抽真空并且充入氮气作为保护气体防止铱金坩埚氧化，用中频感应加热将多晶原料升温至熔化，多晶料全熔后降温使其凝结，然后再次升温使其全部熔化，如此反复3次，排除熔体中产生的气 泡。之后将熔体过热20℃左右，恒温1小时后，得到熔化均匀的磷酸钇锶熔液；
(4)将铱金棒作为籽晶，缓慢浸入到步骤(3)的多晶熔液中，使籽晶的顶端与熔液垂直且刚好接触为止，开始进行单晶的生长；
单晶生长工艺条件：生长温度1800℃；籽晶收颈时提拉速度控制3～3.5mm/h，转速为8-15r/min；当籽晶直径收细至1mm时，开始以0.5℃/h缓慢降温，进行放肩；放肩时提拉速度降至0.3～0.4mm/h，转速为6-8r/min；当晶体肩部的直径达到预定尺寸20mm时，再以0.3℃/h的速度进行升降温，进行等径生长；等径生长时提拉速度为0.5mm/h，转速为8r/min。晶体生长至高度36mm左右时准备提脱晶体；其提脱过程如下：以20℃/h速率升高温度，当升高温度观察到晶体底部有向内收缩的趋势时，将拉速提高至5mm/h提拉晶体使之与熔液脱离。提脱晶体后，将晶体在温场中恒温1小时，以10℃/h速率降至室温，得到磷酸钇锶晶体。
(5)取出晶体后，将其放到高温电阻炉内进行退火，退火温度为1300℃，退火时间为24小时，使Sr 3Y(PO 4) 3晶体生长过程中产生的热应力充分释放。
所得Sr 3Y(PO 4) 3晶体实物照片如图9所示，所得Sr 3Y(PO 4) 3晶体的X-射线衍射图谱在2θ＝27.88°、33.13°和45.74°等处显示特征峰，如图10所示。
所得Sr 3Y(PO 4) 3晶体通过2090nm光时观察到有倍频效应，该晶体能够实现对2090nm波长激光的有效倍频。如图12所示，图中AgGaS 2晶体作为对比，说明该Sr 3Y(PO 4) 3晶体在红外波段能够实现有效倍频。
所述Sr 3Y(PO 4) 3晶体透过光谱如图13所示。在480nm-4100nm波段有＞80％的透过率，表明了生长的晶体具有良好的光学均匀性，且吸收截止边低于180nm，说明此晶体在深紫外波段有潜在的应用。
实施例6、磷酸钆锶晶体的制备
(1)以SrCO 3、Gd 2O 3和P 2O 5为晶体生长原料，按照磷酸钆锶的化学式Sr 3Gd(PO 4) 3，采用化学计量比进行配料，进一步的使P 2O 5过量总质量的5％；
(2)将步骤(1)配好的原料充分混合均匀后装入氧化铝坩埚内，进行第一次烧结，烧结温度为900℃并且恒温15小时，分解并去除CO 2和H 2O；
降温，将一次烧结好的原料充分研磨再次混合均匀后，压成料块，放入氧化铝陶瓷坩埚内进行固相反应，烧结温度为1300℃并且恒温48h，得到所述的磷酸钆锶多晶原料；
(3)把步骤(2)中得到的磷酸钆锶多晶料放入单晶炉内的铱金坩埚中，炉内抽真空并且充 入氮气作为保护气体防止铱金坩埚氧化，用中频感应加热将多晶原料升温至熔化，多晶料全熔后降温使其凝结，然后再次升温使其全部熔化，如此反复3次，排除熔体中产生的气泡。之后将熔体过热20℃左右，恒温1小时后，得到熔化均匀的磷酸钆锶熔液；
(4)取磷酸钇锶晶体作为籽晶，缓慢浸入到步骤(3)的多晶熔液中，使籽晶的顶端与熔液垂直且刚好接触为止，开始进行单晶的生长；
单晶生长工艺条件：生长温度1800℃；籽晶收颈时提拉速度控制4～4.5mm/h，转速为8-15r/min；当籽晶直径收细至1mm时，开始以0.8℃/h缓慢降温，进行放肩；放肩时提拉速度降至0.4～0.5mm/h，转速为6-8r/min；当晶体肩部的直径达到预定尺寸20mm时，再以0.2℃/h的速度进行升降温，进行等径生长；等径生长时提拉速度为0.6mm/h，转速为8r/min。晶体生长至高度30mm时准备提脱晶体；其提脱过程如下：以20℃/h速率升高温度，当升高温度观察到晶体底部有向内收缩的趋势时，将拉速提高至6mm/h提拉晶体使之与熔液脱离。提脱晶体后，将晶体在温场中恒温1小时，以15℃/h速率降至室温，得到磷酸钆锶晶体。
(5)取出晶体后，将其放到高温电阻炉内进行退火，退火温度为1300℃，退火时间为24小时，使Sr 3Gd(PO 4) 3晶体生长过程中产生的热应力充分释放。
所得Sr 3Gd(PO 4) 3晶体尺寸为直径20mm、高度30mm；通过2090nm光时观察到有倍频效应。经测试该晶体透光性在480nm-4100nm波段有＞80％的透过率，光学均匀性好。
对比例3：如实施例5所述，所不同的是步骤(1)中SrCO 3、Y 2O 3和NH 4H 2PO 4原料按照化学式Sr 3Y(PO 4) 3化学计量比进行配料，NH 4H 2PO 4不过量。结果显示：因磷酸钇锶原料熔化后发生组分偏离出现分层现象，下籽晶提拉时无法长出Sr 3Y(PO 4) 3单晶，生长产物照片如图3所示，该产物为Sr 3Y(PO 4) 3多晶。
对比例4：如实施例5所述的方法，所不同的是：步骤(1)中SrCO 3、Y 2O 3和NH 4H 2PO 4原料按照化学式Sr 3Y(PO 4) 3化学计量比进行配料，进一步的使NH 4H 2PO 4原料过量0.5％。
所生长出的晶体品质很差且形状不规则，如图8所示。经研究发现该例中磷酸盐仅过量0.5％不足以补偿晶体生长中由于磷的挥发造成的组分偏离，从而使得磷酸钇锶单晶结晶性差。
实施例7、
将实施例5制备的Sr 3Y(PO 4) 3晶体参考压电物理轴定向后，沿物理轴X和Y方向加工晶片，其厚度方向为X，长度方向为Y，宽度方向为Z，晶片尺寸为：厚×宽×长 ＝1.2mm×3.5mm×10.0mm，厚度方向晶面镀导电电极。利用阻抗分析仪检测到所述晶片样品的压电谐振和反谐振峰，说明该晶体在该切向具有压电效应。特别的，当温度升高至1000℃时，依然观测到压电谐振和反谐振峰，说明该晶体可作为高温压电晶体应用。如图14所示。
实施例8、
将实施例6制备的Sr 3Y(PO 4)3晶体参考压电物理轴定向，沿物理轴X和Z方向加工晶片，其厚度方向为X，长度方向为Z，宽度方向为X，晶片尺寸为：厚×宽×长＝(0.5-1.5)mm×(3.0-4.0)mm×(8.0-12.0)mm，厚度方向晶面镀导电电极。
利用阻抗分析仪检测到所述晶片样品的压电谐振和反谐振峰，说明该晶体在该切向具有压电效应。同实施例5，当温度升高至1000℃时，还可观测到压电谐振峰和反谐振峰，说明该晶体可作为高温压电晶体应用。所述样品的谐振频率和反谐振频率分别出现在881.8kHz和887.8kH处。
实施例9、
将实施例5制备的Sr 3Y(PO 4) 3晶体参考压电物理轴定向，沿物理轴Z和X方向加工晶片，其厚度方向为Z，长度方向为X，宽度方向为Y，晶片尺寸为：厚×宽×长＝1.0mm×3.5mm×10.0mm，厚度方向晶面镀导电电极。
利用阻抗分析仪检测到晶片样品的压电谐振和反谐振峰，说明该晶体在该方向具有压电效应。升温到1000℃温度下，晶体切型依然具有压电活性，因此可作为高温压电晶体应用。将不同的Sr 3Y(PO 4) 3晶体切型从室温升至1000℃，观测得到该晶体依然具有压电活性，所得阻抗分析图谱如图15所示。
实施例10、
将实施例6制备的Sr 3Y(PO 4) 3晶体参考压电物理轴X、Y和Z轴定向后，沿物理轴X、Y和Z任意旋转θ角度，θ取值为0-180°，制成不同的Sr 3Y(PO 4) 3晶体切型。然后参考实施例5加工晶片样品，晶片尺寸为：厚×宽×长＝(0.5-1.5)mm×(3.0-4.0)mm×(8.0-12.0)mm，厚度方向晶面镀导电电极。
利用阻抗分析仪均能检测到上述不同Sr 3Y(PO 4) 3晶体切型的系列晶片样品的压电谐振和反谐振峰，说明该晶体在空间任意方向上具有压电效应。所述晶体切型在1000℃温度下，同样具有压电活性，因此可作为高温压电晶体应用。
实施例11、磷酸镱钡晶体的制备
(1)以BaCO 3、Yb 2O 3和NH 4H 2PO 4为晶体生长原料，按照磷酸镱钡的化学式Ba 3Yb(PO 4) 3， 采用化学计量比进行配料，进一步的使NH 4H 2PO 4过量磷酸盐总质量的5％；
(2)将步骤(1)配好的原料充分混合均匀后装入氧化铝坩埚内，进行第一次烧结，烧结温度为900℃并且恒温10小时，分解并去除CO 2、H 2O和NH 3；
降温，将一次烧结好的原料充分研磨再次混合均匀后，压成料块，放入氧化铝陶瓷坩埚内进行固相反应，烧结温度为1250℃并且恒温48h，得到所述的磷酸镱钡多晶原料；
(3)把步骤(2)中得到的磷酸镱钡多晶料放入单晶炉内的铱金坩埚中，炉内抽真空并且充入氮气作为保护气体防止铱金坩埚氧化，用中频感应加热将多晶原料升温至熔化，多晶料全熔后降温使其凝结，然后再次升温使其全部熔化，如此反复3次，排除熔体中产生的气泡。之后将熔体过热20℃左右，恒温1小时后，得到熔化均匀的磷酸镱钡熔液；
(4)将铱金棒作为籽晶，缓慢浸入到步骤(3)的多晶熔液中，使籽晶的顶端与熔液垂直且刚好接触为止，开始进行单晶的生长；
单晶生长工艺条件：生长温度1800℃；籽晶收颈时提拉速度控制1～3.5mm/h，转速为6-12r/min；当籽晶直径收细至1mm时，开始以0.5℃/h缓慢降温，进行放肩；放肩时提拉速度降至0.3～0.5mm/h，转速为6-8r/min；当晶体肩部的直径达到预定尺寸15mm时，再以0.3℃/h的速度进行升降温，进行等径生长；等径生长时提拉速度为0.5mm/h，转速为5r/min。晶体生长至高度30mm左右时准备提脱晶体；其提脱过程如下：以15℃/h速率升高温度，当升高温度观察到晶体底部有向内收缩的趋势时，将拉速提高至5mm/h提拉晶体使之与熔液脱离。提脱晶体后，将晶体在温场中恒温1小时，以10-30℃/h速率降至室温，得到磷酸镱钡晶体。
(5)取出晶体后，将其放到高温电阻炉内进行退火，退火温度为1300℃，退火时间为48小时，使Ba 3Yb(PO 4) 3晶体生长过程中产生的热应力充分释放。
所得Ba 3Yb(PO 4) 3晶体实物照片如图17所示，所得Ba 3Yb(PO 4) 3晶体的X-射线衍射图谱在2θ＝26.93°、31.99°和44.10°等处显示特征峰，如图18所示。
所述Ba 3Yb(PO 4) 3晶体的介电谱和电阻率特性如图19和20所示。在900℃时不仅具有低的介电损耗(<1.1)，而且具有高的电阻率(ρ>10 7(Ohm·cm))，表明了Ba 3Yb(PO 4) 3晶体在高温压电领域具有潜在的应用。

Claims (20)

  1. 通式为M 3RE(PO 4) 3的光电功能晶体，所述晶体为非中心对称结构，属于立方晶系-43m点群，其中，M为碱土金属，RE为稀土元素。
  2. 根据权利要求1所述的光电功能晶体，其特征在于，所述的碱土金属为Ba、Ca或Sr。
  3. 根据权利要求1所述的光电功能晶体，其特征在于，所述的稀土元素为Y、La、Gd或Yb。
  4. 根据权利要求1所述的光电功能晶体，其特征在于，所述M 3RE(PO 4) 3光电功能晶体选自下列之一种：
    Ba 3Y(PO 4) 3晶体，Ba 3La(PO 4) 3晶体，Ba 3Yb(PO 4) 3，Ca 3Gd(PO 4) 3晶体，Sr 3Y(PO 4) 3晶体，Sr 3La(PO 4) 3晶体，Sr 3Gd(PO 4) 3晶体。
  5. 根据权利要求4所述的光电功能晶体，其特征在于，所述晶体结构参数如下：
    Ba 3Y(PO 4) 3晶体：立方晶系-43m点群；空间群I-43d；晶胞参数为
    Figure PCTCN2020095244-appb-100001
    密度＝4.553g/cm 3；
    Ba 3La(PO 4) 3晶体：立方晶系-43m点群；空间群I-43d；晶胞参数为
    Figure PCTCN2020095244-appb-100002
    密度＝4.77g/cm 3；
    Ba 3Yb(PO 4) 3晶体：立方晶系-43m点群；空间群I-43d；晶胞参数为
    Figure PCTCN2020095244-appb-100003
    密度＝5.149g/cm 3；
    Ca 3Gd(PO 4) 3晶体：立方晶系-43m点群；空间群I-43d；晶胞参数为
    Figure PCTCN2020095244-appb-100004
    密度＝3.9g/cm 3；
    Sr 3Y(PO 4) 3晶体：立方晶系-43m点群；空间群I-43d；晶胞参数为
    Figure PCTCN2020095244-appb-100005
    密度＝4.093g/cm 3；
    Sr 3La(PO 4) 3晶体：立方晶系-43m点群；空间群I-43d；晶胞参数为
    Figure PCTCN2020095244-appb-100006
    密度＝4.3g/cm 3；
    Sr 3Gd(PO 4) 3晶体：立方晶系-43m点群；空间群I-43d；晶胞参数为
    Figure PCTCN2020095244-appb-100007
    密度＝4.526g/cm 3。
  6. 一种磷酸钇锶晶体，化学式为Sr 3Y(PO 4) 3，该晶体为非中心对称结构，属于立方晶 系-43m点群，晶胞参数为
    Figure PCTCN2020095244-appb-100008
    α＝β＝γ＝90°。该晶体从室温到熔点无相变。
  7. 如权利要求6所述磷酸钇锶晶体，其特征在于，所述磷酸钇锶晶体熔点基本上在1850℃，且从室温到熔点无相变；光谱分析测得该晶体在480nm-4100nm波段有>80％的高光学透过率；或者，用阻抗法测得该晶体的有效压电常数为d 14＝6-10pC/N；或者，利用阻抗法测量计算得到该晶体的有效机电耦合系数为k 14＝10-30％。
  8. 权利要求1所述M 3RE(PO 4) 3的光电功能晶体的生长方法，包括步骤：
    (1)多晶料合成
    根据化学式通式M 3RE(PO 4) 3，采用化学计量比准确称取原料MCO 3、RE  2O 3和含磷化合物，在此基础上进一步使含磷化合物过量其总质量1.5-10％质量百分比(以化学计量比的含磷化合物的质量计)；
    将上述称量好的原料进行研磨和混合均匀后进行一次烧结，优选装入陶瓷坩埚内进行烧结；烧结温度为800℃-950℃并且恒温10-15小时，然后降温，将一次烧结的原料进行研磨细化并混合均匀，压成圆饼状料块进行二次烧结，烧结温度为1200-1400℃并且恒温24-48小时，经固相反应得到M 3RE(PO 4) 3多晶料；
    (2)多晶料熔化
    将步骤(1)合成的M 3RE(PO 4) 3多晶料放入单晶生长炉内的铱金坩埚中，炉内抽真空并且充入保护气体氮气或者氩气，采用中频感应加热方式将M 3RE(PO 4) 3多晶料升温至熔化，多晶料全熔后降温使其凝结，然后再次升温使其全部熔化，如此重复若干次，排净熔体中产生的气泡；然后再将熔体过热10-20℃，恒温0.5-2小时，得到熔化均匀的M 3RE(PO 4) 3熔液；
    (3)提拉法晶体生长
    采用铱金棒或M 3RE(PO 4) 3晶体作为籽晶，将籽晶下到M 3RE(PO 4) 3熔液液面，使籽晶底端与熔液垂直且刚好接触，开始进行单晶生长；单晶生长工艺条件如下：生长温度1800-1950℃；籽晶收颈时提拉速度1-8mm/h、放肩时提拉速度降至0.2-1mm/h，等径生长提拉速度为0.5-1mm/h；晶体生长到所需尺寸时提脱晶体。
  9. 如权利要求8所述M 3RE(PO 4) 3的光电功能晶体的生长方法，其特征在于，提脱晶体后，将晶体在温场内恒温0.5-1h,然后以5-30℃/h的速率降至室温，得到M 3RE(PO 4) 3晶体；从单晶生长炉内取出M 3RE(PO 4) 3晶体后，将其进行退火处理，退火温度为1200-1400℃。 退火时间为24-48小时。
  10. 如权利要求8所述M 3RE(PO 4) 3的光电功能晶体的生长方法，其特征在于，步骤(1)中，所述含磷化合物为NH 4H 2PO 4或P 2O 5；使含磷化合物过量其总质量3-6％质量百分比。
  11. 如权利要求8所述M 3RE(PO 4) 3的光电功能晶体的生长方法，其特征在于，步骤(1)中，氮气或者惰性气体的体积分数为90％-95％；步骤(3)中晶体生长经过收颈、放肩、等径生长和提脱晶体四个阶段；其中，收颈过程中，提拉速度控制为1-8mm/h，当籽晶直径收细至0.5-2.0mm时，开始以0.5-5℃/h缓慢降温，进行放肩；放肩阶段，将提拉速度降至0.2-1mm/h；当晶体肩部的直径达到预定尺寸时，再以0-5℃/h的速度升温或降温，控制温度在1800-1950℃，进行等径生长；当晶体提拉至所需高度时开始提脱晶体。
  12. 如权利要求8所述M 3RE(PO 4) 3的光电功能晶体的生长方法，其特征在于，所述提脱晶体工艺条件为：以10-30℃/h速率缓慢升高温度，当晶体底部有向内收缩的趋势时，将提拉速度提高至5-20mm/h，提拉晶体使之与熔液脱离。
  13. 权利要求6所述的磷酸钇锶晶体的制备方法，包括：
    将含Sr化合物、含Y化合物和含P化合物的原料混合、烧结，合成磷酸钇锶多晶料，升温使磷酸钇锶多晶料熔化，并经反复降温凝结、升温熔化若干次，得到熔化均匀的磷酸钇锶熔液；
    其中，根据化学式Sr 3Y(PO 4) 3，所述原料中含Sr化合物、含Y化合物和含P化合物在化学计量比基础上，按含P化合物质量计使其过量2.5-7.5％质量百分比；
    采用铱金棒或磷酸钇锶晶体作为籽晶，使所述籽晶底端与所述磷酸钇锶熔液刚好接触，采用提拉法进行单晶生长，单晶生长温度1700-1850℃，籽晶收颈时提拉速度2-5mm/h，放肩时提拉速度降至0.2-2mm/h，等径生长提拉速度为0.2-1mm/h；晶体生长到所需尺寸时提脱晶体，并在温场内恒温0.5-1h，再以不大于30℃/h的速率降至室温，得到磷酸钇锶晶体。
  14. 如权利要求13所述的磷酸钇锶晶体的制备方法，其特征在于，所述含Sr化合物、含Y化合物和含P化合物各自独立地选自相应的氧化物、碳酸盐、磷酸盐、卤化物、硝酸盐、草酸盐和硼酸盐中的至少一种，且含有Sr、Y、P元素的化合物不可以同时为卤化物；优选的，所述含Sr化合物选自相应的氧化物、碳酸盐、卤化物、硫酸盐或硝酸盐化合物；所述含Y化合物选自相应的氧化物、硝酸盐或磷酸盐；所述含P化合物选自相应的氧化物或磷酸盐。
  15. 如权利要求13所述的磷酸钇锶晶体的制备方法，其特征在于，制备磷酸钇锶多晶 料时，原料混合后进行两次高温烧结，所述原料混合、烧结按以下方法进行：将称量好的原料进行研磨并混合均匀后进行一次烧结，烧结温度为800℃-950℃，恒温10-15小时，以分解和去除CO 2、NH 3和H 2O；然后降至室温，将一次烧结的原料进行充分研磨细化并混合均匀，压成圆饼状料块进行二次烧结，烧结温度为1200℃-1400℃，恒温20-40小时，原料经固相反应得到磷酸钇锶多晶料。
  16. 如权利要求13所述的磷酸钇锶晶体的制备方法，其特征在于，所述磷酸钇锶多晶料熔化后，反复降温凝结、升温熔化3-4次；优选的，所述磷酸钇锶多晶料熔化后反复降温凝结、升温熔化若干次后，再将熔体过热10-20℃，恒温0.5-2小时。
  17. 如权利要求13所述的磷酸钇锶晶体的制备方法，其特征在于，所述晶体生长过程包括收颈、放肩、等径生长和提脱晶体四个阶段；优选的，收颈阶段中提拉速度控制为2-5mm/h，当籽晶直径收细至0.5-2.0mm时，开始以0.5-5℃/h缓慢降温，进行放肩；放肩阶段将提拉速度降至0.2-2mm/h，当晶体肩部的直径达到所需晶体直径时，再以0-5℃/h的速度升温或降温，进行等径生长,等径生长时提拉速度为0.4-0.7mm/h,转速为6-8r/min；当晶体提拉至所需晶体高度时进行提脱晶体；所述提脱晶体方法如下：以10-30℃/h的速率缓慢升高温度，当晶体底部有向内收缩的趋势时，将提拉速度提高至5-20mm/h，提拉晶体使之与熔液脱离。
  18. 如权利要求13所述的磷酸钇锶晶体的制备方法，其特征在于，本发明的磷酸钇锶晶体生长方法还包括退火步骤；所述退火步骤包括：在磷酸钇锶晶体生长完成后，将磷酸钇锶晶体取出，置于高温马弗炉内进行退火，退火温度为1200-1400℃，退火时间为24-48小时。
  19. 权利要求6所述的Sr 3Y(PO 4) 3晶体作为非线性光学晶体和压电晶体的应用，作为激光基质晶体、非线性频率变化晶体、高温压电晶体的用途。
  20. 如权利要求9所述的Sr 3Y(PO 4) 3晶体作为非线性光学晶体和压电晶体的应用，其特征在于，所述非线性光学功能器件包括激光频率变换器、光参量放大器、光参量振荡器或拉曼频率变换器；所述压电器件包括压电谐振器、振荡器、滤波器、压电换能器、压电式压力传感器、声换能器或超声波传感器。
PCT/CN2020/095244 2019-06-14 2020-06-10 光电功能晶体m 3re(po 4) 3及其制备方法与应用 Ceased WO2020248987A1 (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US17/595,832 US12595590B2 (en) 2019-06-14 2020-06-10 Piezoelectric single crystal M3RE(PO4)3 and the preparation method and application thereof
JP2021568831A JP7589999B2 (ja) 2019-06-14 2020-06-10 圧電単結晶ｍ３ｒｅ（ｐｏ４）３およびその育成方法および応用

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
CN201910517507.7A CN110079861B (zh) 2019-06-14 2019-06-14 磷酸钇锶晶体及其制备方法与应用
CN201910517509.6 2019-06-14
CN201910517509.6A CN110067024B (zh) 2019-06-14 2019-06-14 光电功能晶体m3re(po4)3及其制备方法
CN201910517507.7 2019-06-14

Publications (1)

Publication Number Publication Date
WO2020248987A1 true WO2020248987A1 (zh) 2020-12-17

Family

ID=73781839

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2020/095244 Ceased WO2020248987A1 (zh) 2019-06-14 2020-06-10 光电功能晶体m 3re(po 4) 3及其制备方法与应用

Country Status (3)

Country Link
US (1) US12595590B2 (zh)
JP (1) JP7589999B2 (zh)
WO (1) WO2020248987A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115261985A (zh) * 2021-04-30 2022-11-01 中国科学院深圳先进技术研究院 铌稀土晶体材料及其制备方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115159484B (zh) * 2022-07-22 2023-06-30 承德莹科精细化工股份有限公司 一种高纯度正磷酸锶的制备方法
CN115747950B (zh) * 2022-12-14 2025-11-25 山东省科学院新材料研究所 一种ktn单晶的制备方法
KR102822018B1 (ko) * 2022-12-14 2025-06-19 전남대학교산학협력단 카르복실산, 설폰산, 인산 또는 이들의 산 염 유도체를 이용한 결정성 파이버의 제조방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101104950A (zh) * 2007-08-07 2008-01-16 山东大学 磷酸三镓晶体的助熔剂生长法
CN101514491A (zh) * 2009-02-27 2009-08-26 中国科学院上海硅酸盐研究所 Ba3BP3O12晶体及其生长方法与应用
CN102086530A (zh) * 2009-12-03 2011-06-08 中国科学院福建物质结构研究所 一种非线性光学材料磷酸铋铅晶体
CN110067024A (zh) * 2019-06-14 2019-07-30 山东大学 光电功能晶体m3re(po4)3及其制备方法
CN110079861A (zh) * 2019-06-14 2019-08-02 山东大学 磷酸钇锶晶体及其制备方法与应用

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101104950A (zh) * 2007-08-07 2008-01-16 山东大学 磷酸三镓晶体的助熔剂生长法
CN101514491A (zh) * 2009-02-27 2009-08-26 中国科学院上海硅酸盐研究所 Ba3BP3O12晶体及其生长方法与应用
CN102086530A (zh) * 2009-12-03 2011-06-08 中国科学院福建物质结构研究所 一种非线性光学材料磷酸铋铅晶体
CN110067024A (zh) * 2019-06-14 2019-07-30 山东大学 光电功能晶体m3re(po4)3及其制备方法
CN110079861A (zh) * 2019-06-14 2019-08-02 山东大学 磷酸钇锶晶体及其制备方法与应用

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
CHEN HENGJUN ET AL.: "Optical spectroscopic investigation of Ba3Tb(PO4)3 single crystals for visible laser applications", JOURNAL OF ALLOYS AND COMPOUNDS, vol. 740, 11 December 2017 (2017-12-11), pages 1133 - 1139, XP085413512, ISSN: 0925-8388 *
CHEN XIN ET AL.: "Ba3Tb(PO4)3:Crystal growth, structure, magnetic and magneto-optical properties", OPTICAL MATERIALS, vol. 44, 18 May 2015 (2015-05-18), pages 48 - 53, XP055764473, ISSN: 0925-3467 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115261985A (zh) * 2021-04-30 2022-11-01 中国科学院深圳先进技术研究院 铌稀土晶体材料及其制备方法
CN115261985B (zh) * 2021-04-30 2024-01-26 中国科学院深圳先进技术研究院 铌稀土晶体材料及其制备方法

Also Published As

Publication number Publication date
JP2022533397A (ja) 2022-07-22
US12595590B2 (en) 2026-04-07
JP7589999B2 (ja) 2024-11-26
US20220228294A1 (en) 2022-07-21

Similar Documents

Publication Publication Date Title
WO2020248987A1 (zh) 光电功能晶体m 3re(po 4) 3及其制备方法与应用
CN104962994B (zh) 导模法生长特定尺寸稀土掺杂含镓石榴石系列晶体的方法
Li et al. Luminescent properties of LuAG: Ce phosphors with different Ce contents prepared by a sol–gel combustion method
CN110408994A (zh) 一种掺谱钪酸钆可见波段激光晶体及其制备方法
CN103422172B (zh) 一种高性能光电功能晶体硼酸钙氧铥晶体及其生长与应用
CN110067024A (zh) 光电功能晶体m3re(po4)3及其制备方法
CN106676635B (zh) 一类碲酸盐晶体及其生长方法与应用
CN110079861B (zh) 磷酸钇锶晶体及其制备方法与应用
CN101275279B (zh) 四晶格位结构压电晶体
CN101603206B (zh) Cr3+、Nd3+:YVO4晶体和Cr4+、Nd3+:YVO4晶体的制备方法
CN110923816B (zh) 一种钛酸铋钙光电功能晶体及其生长方法与应用
CN103014865A (zh) 一种硅酸铝镓锶钽压电晶体及其制备方法
CN102094237A (zh) 掺钬铝酸钇钙激光晶体的生长方法
CN110092411A (zh) 一种含镓石榴石结构闪烁晶体的多晶料合成装置及合成方法
CN109652856B (zh) Tb3+自激活激光晶体、其制备方法和在可见波段固体激光器中的应用
CN103866388B (zh) 一种立方相萤石型铌酸铽钙磁光晶体及其制备方法
CN118087042A (zh) 一种镝离子掺杂铝酸钆镧锶黄光激光晶体及其制备方法与应用
CN106012016B (zh) 一种电可调上转换发光无铅铁电单晶体及其制备方法
CN114875490B (zh) 一种高铝铽铝镓石榴石磁光晶体及其制备方法与应用
CN113862774B (zh) 一种铌钪酸镨锂磁光晶体及其制备方法
CN1320723A (zh) 掺钕硼酸钆钙晶体的坩埚下降法生长技术
CN109868502B (zh) 一种稀土掺杂铌酸盐单晶上转换发光材料及其制备方法
CN118439860B (zh) 一种结构可调的透明荧光陶瓷及其制备方法和应用
Yu et al. Czochralski growth and characterization of Dy: La3Ga5. 5Nb0. 5O14 single crystals
CN121951696A (zh) 一种高熵稀土钙氧硼酸盐非线性光学晶体及其制备方法与应用

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20823029

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2021568831

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 20823029

Country of ref document: EP

Kind code of ref document: A1

WWG Wipo information: grant in national office

Ref document number: 17595832

Country of ref document: US