WO2020238080A1 - 蒸镀源清洁设备及蒸镀系统 - Google Patents

蒸镀源清洁设备及蒸镀系统 Download PDF

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Publication number
WO2020238080A1
WO2020238080A1 PCT/CN2019/119959 CN2019119959W WO2020238080A1 WO 2020238080 A1 WO2020238080 A1 WO 2020238080A1 CN 2019119959 W CN2019119959 W CN 2019119959W WO 2020238080 A1 WO2020238080 A1 WO 2020238080A1
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WO
WIPO (PCT)
Prior art keywords
evaporation source
chamber
vapor deposition
evaporation
cleaning equipment
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Application number
PCT/CN2019/119959
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English (en)
French (fr)
Inventor
方刚
陈策
王宝友
尹俊
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昆山国显光电有限公司
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Publication of WO2020238080A1 publication Critical patent/WO2020238080A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/26—Vacuum evaporation by resistance or inductive heating of the source

Definitions

  • This application belongs to the field of display technology, and in particular relates to an evaporation source cleaning equipment and an evaporation system.
  • OLED Organic Light Emitting Diode
  • the evaporation process of the OLED array substrate is usually carried out in the evaporation chamber of the evaporation equipment.
  • the evaporation material will remain on the parts of the evaporation source such as the heater and the crucible, and it needs to be regularly in the evaporation chamber.
  • the chamber is baked to remove impurities remaining in the heater and crucible. The baking process takes a long time and directly affects the utilization rate of the evaporation system.
  • the present application provides an evaporation source cleaning equipment, including: a vacuum chamber; a first evaporation source heating unit disposed in the vacuum chamber; the first evaporation source heating unit includes a supporting part, and the supporting part is used for At least one point evaporation source is placed, the first evaporation source heating unit can provide heat radiation for cleaning the point evaporation source; the second evaporation source heating unit is arranged in the vacuum chamber, and the first evaporation source heating unit
  • the second evaporation source heating unit includes at least one accommodating groove for placing the wire evaporation source or the surface evaporation source, and the accommodating groove can provide for cleaning the wire evaporation source or the surface evaporation source placed therein. The heat radiation of the plating source.
  • the first vapor deposition source heating unit can generate heat radiation to bake the point vapor deposition source placed on the supporting part to remove impurities from the point vapor deposition source to achieve point alignment.
  • Cleaning of the evaporation source; the holding tank of the second evaporation source heating unit can generate heat radiation to bake the line evaporation source or surface evaporation source placed in it to remove the line evaporation source or surface evaporation source Impurities, to realize the cleaning of the line evaporation source or the surface evaporation source.
  • evaporation source cleaning equipment of this embodiment can remove impurities from point evaporation sources, line evaporation sources, and surface evaporation sources without affecting the process of the evaporation chamber, thereby improving the evaporation efficiency and the evaporation.
  • Plating system utilization rate can remove impurities from point evaporation sources, line evaporation sources, and surface evaporation sources without affecting the process of the evaporation chamber, thereby improving the evaporation efficiency and the evaporation.
  • the vacuum chamber includes a first chamber and a second chamber that are isolated from each other, the first vapor deposition source heating unit is provided in the first chamber, and the second vapor deposition source heating unit is provided in The second chamber. In order to prevent the heat generated when the first vapor deposition source heating unit and the second vapor deposition source heating unit work simultaneously.
  • the supporting portion includes a plurality of supporting plates distributed in an array, each supporting plate can be correspondingly placed with a point evaporation source, and the supporting plate can generate heat radiation cleaning for cleaning the point evaporation source Point evaporation source.
  • the energizing devices can be electrically connected to the heater of the point evaporation source, so that the heater of the point evaporation source can be used for cleaning. The heat radiation for cleaning.
  • the heater of the spot evaporation source After the heater of the spot evaporation source is energized to generate heat radiation, its own impurities can be removed, and impurities in the crucible of the spot evaporation source placed in the heater of the spot evaporation source can also be removed.
  • the spot evaporation source itself By using the heater of the existing spot evaporation source, the spot evaporation source itself can be cleaned, and the structure of the equipment can be simplified.
  • the energizing device is provided with a first positioning structure, and the first positioning structure matches the second positioning structure on the heater. It can ensure that the heater of the point evaporation source and the heating device are quickly docked.
  • each support plate can correspond to different types of point evaporation sources.
  • a cylindrical first heat dissipation device is further provided in the first chamber, and the first heat dissipation device is provided on the support portion and surrounds the support plate.
  • the point vapor deposition source can be located in the first heat dissipation device. Inside a heat dissipation device, and a first predetermined distance away from the inner surface of the first heat dissipation device.
  • the cylindrical first heat dissipating device can protect each part of the structure in it, and can also prevent the high temperature generated by the support plate or the heater located in the point evaporation source from damaging the vacuum environment inside the chamber. Prevent other structures in the chamber from being damaged by high temperature heat radiation. Furthermore, the uniformity of heating of the crucible of the point evaporation source can also be maintained.
  • a second heat dissipation device is further provided in the first chamber, and the second heat dissipation device is connected to the inner surface of the first chamber and is covered on the heating unit of the first evaporation source. top.
  • the second heat dissipation device is covered on the top of the cylindrical first heat dissipation device, and can absorb the heat emitted from the top of the cylindrical first heat dissipation device during the baking and cleaning process of the point evaporation source, which can improve the heat dissipation of the chamber Function to avoid too high temperature on the side wall of the chamber.
  • a third heat dissipation device is further provided in the second cavity, and the third heat dissipation device can be arranged around the accommodating groove and is separated from the outer surface of the accommodating groove by a second predetermined distance.
  • the third heat dissipation device can protect each part of the structure located therein, and can also prevent the high temperature generated by the containing tank from damaging the vacuum environment inside the chamber, and prevent other structures in the chamber from being damaged by high temperature heat radiation. Furthermore, the uniformity of heating of the crucible of the linear vapor deposition source or the crucible of the surface vapor deposition source can also be maintained.
  • the number of accommodating grooves is more than two, and at least one of the two or more accommodating grooves can hold different types of wire evaporation sources or different types of The surface vapor deposition source is cleaned to improve the versatility of the second vapor deposition source heating unit.
  • the present application provides an evaporation system, including: an evaporation chamber and the evaporation source cleaning equipment of any of the above embodiments, wherein the evaporation source cleaning equipment is arranged outside the evaporation chamber.
  • FIG. 1 is a schematic structural diagram of an evaporation source cleaning equipment provided by an embodiment of the present application
  • FIG. 2 is a structural view of an open cabin door of an evaporation source cleaning equipment provided by an embodiment of the present application;
  • FIG. 3 is a schematic structural diagram of a first evaporation source heating unit and a first heat dissipation device provided by an embodiment of the present application;
  • FIG. 4 is a schematic structural diagram of a second evaporation source heating unit and a third heat dissipation device provided by an embodiment of the present application;
  • Fig. 5 is a schematic structural diagram of a first positioning structure and a second positioning structure provided by an embodiment of the present application.
  • Figure 1 is a schematic structural diagram of an evaporation source cleaning equipment provided by an embodiment of the present application
  • Figure 2 is an open hatch of an evaporation source cleaning equipment provided by an embodiment of the present application
  • Fig. 3 is a schematic structural diagram of a first evaporation source heating unit and a first heat sink provided in an embodiment of the present application
  • Fig. 4 is a second evaporation source heating unit and a A schematic structural diagram of the third heat dissipation device.
  • the evaporation source cleaning equipment of the embodiment of the present application at least includes a vacuum chamber, a first evaporation source heating unit 11 and a second evaporation source heating unit 21 located in the vacuum chamber.
  • the first vapor deposition source heating unit 11 and the second vapor deposition source heating unit 21 are spaced apart to prevent mutual influence when the first vapor deposition source heating unit 11 and the second vapor deposition source heating unit 21 work simultaneously.
  • the first vapor deposition source heating unit 11 includes a support portion 110 for placing at least one point vapor deposition source.
  • the first vapor deposition source heating unit 11 can generate heat radiation to clean the point vapor deposition source for baking.
  • the point vapor deposition source may include a heater of the point vapor deposition source and a crucible of the point vapor deposition source.
  • the first vapor deposition source heating unit 11 of the embodiment of the present application can either clean the heater of the point vapor deposition source or Point the crucible of the evaporation source for cleaning.
  • the second evaporation source heating unit 21 includes at least one accommodating groove 211 for placing a wire evaporation source or a surface evaporation source, and the accommodating groove 211 can generate heat radiation to the wire evaporation source placed in the accommodating groove 211.
  • the plating source or surface evaporation source is baked for cleaning.
  • the linear vapor deposition source may include a crucible of the linear vapor deposition source, and the crucible of the linear vapor deposition source may be placed in the containing tank 211 for cleaning; the surface vapor deposition source may include the crucible of the surface vapor deposition source, and the surface vapor deposition source may be The crucible is placed in the containing tank 211 for cleaning.
  • the chamber of the evaporation source cleaning equipment is in a vacuum state
  • the chamber can be pumped by an air extraction device to keep it in a vacuum state
  • the first evaporation source can be heated during the extraction process
  • the impurities baked by the heating unit and the second vapor deposition source heating unit are drawn out of the chamber.
  • the evaporation source cleaning equipment includes a first evaporation source heating unit 11 and a second evaporation source heating unit 21 arranged in a vacuum chamber.
  • the first vapor deposition source heating unit 11 includes a support portion 110 for placing at least one point vapor deposition source.
  • the first vapor deposition source heating unit 11 can generate heat radiation to bake the point vapor deposition source placed on the support portion 110.
  • the second evaporation source heating unit 21 includes a accommodating groove 211 for placing a linear evaporation source or a surface evaporation source, and the accommodating groove 211 It can generate heat radiation to bake the line evaporation source or the surface evaporation source placed therein to remove the impurities of the line evaporation source or the surface evaporation source, and realize the cleaning of the line evaporation source or the surface evaporation source.
  • evaporation source cleaning equipment of this embodiment can remove impurities from point evaporation sources, line evaporation sources, and surface evaporation sources without affecting the process of the evaporation chamber, thereby improving the evaporation efficiency and the evaporation.
  • the utilization rate of the plating system Moreover, after the impurity of the point evaporation source, the line evaporation source, and the surface evaporation source are removed by the evaporation source, the quality of the evaporated product can be improved during the evaporation production, thereby improving the product yield and product performance.
  • the vacuum chamber may include a first chamber 10 and a second chamber 20 that are isolated from each other, wherein the first evaporation source heating unit 11 is disposed in the first chamber 10, and the second evaporation The plating source heating unit 21 is arranged in the second chamber 20 to further prevent the heat generated when the two are working simultaneously from affecting each other.
  • the first chamber 10 and the second chamber 20 may be isolated by a heat insulation plate 30.
  • the supporting portion 110 of the first vapor deposition source heating unit 11 of this embodiment includes a plurality of supporting disks 111 distributed in an array, and each supporting disk 111 can correspond to a point vapor deposition source.
  • each supporting disk 111 can correspond to a point vapor deposition source.
  • Each support plate 111 of this embodiment can be provided with different types of point evaporation sources to ensure the compatibility of the support plate 111.
  • the support plate 111 itself can generate heat radiation to clean the spot evaporation source provided thereon.
  • a resistance wire can be provided in the support plate 111, and the resistance wire is energized to generate heat radiation to bake the point evaporation source to achieve a cleaning function.
  • a plurality of energizing devices may be provided on the support plate 111, and the energizing devices can be electrically connected to the heater of the point evaporation source, so that the The heater can generate heat radiation.
  • the heater of the spot evaporation source is energized to generate heat radiation, its own impurities can be removed, and impurities in the crucible of the spot evaporation source placed in the heater of the spot evaporation source can also be removed.
  • the spot evaporation source itself is cleaned, and the structure of the equipment can be simplified.
  • FIG. 5 is a schematic structural diagram of a first positioning structure and a second positioning structure provided by an embodiment of the present application.
  • a first positioning structure 1110 is provided on the energizing device, and a second positioning structure 61 matching the first positioning structure is provided on the heater of the point evaporation source.
  • the first positioning structure 1110 may be one of a groove or a protrusion
  • the second positioning structure 61 may be the other of a groove or a protrusion.
  • FIG. 5 only grooves are provided on the energizing device and protrusions are provided on the heater of the point evaporation source as an example for illustration.
  • a controller may also be provided in the first chamber 10 to control the current or voltage of the resistance wire and the energizing device provided on the support plate 111, thereby controlling its heat radiation ability, so that the heat radiation ability is Within the required range.
  • a cylindrical first heat dissipation device 12 is further provided in the first chamber 10.
  • the first heat dissipation device 12 may be disposed on the support portion 110 and can be arranged to surround the support plate 111, and each support plate 111 is correspondingly provided with a first heat dissipation device 12.
  • the point evaporation source is arranged on the corresponding support plate 111 and can be located in the first heat dissipation device 12 and is separated from the inner surface of the first heat dissipation device 12 by a first preset distance.
  • the cylindrical first heat dissipation device 12 may be a double-layer cylindrical body with an interlayer, and circulating cooling water pipelines arranged according to a predetermined rule are arranged in the interlayer.
  • the first preset distance can be set according to actual needs. In this embodiment, there is no restriction on the specific arrangement of the circulating cooling water pipelines, for example, it may be spirally arranged in the interlayer of the double-layer cylindrical body.
  • the cylindrical first heat dissipation device 12 can protect each part of the structure located therein, and can also prevent the high temperature damage caused by the support plate 111 or the heater located in the internal point evaporation source.
  • the vacuum environment inside the first chamber 10 prevents other structures in the first chamber 10 from being damaged by high temperature heat radiation. Furthermore, the uniformity of heating of the crucible of the point evaporation source can also be maintained.
  • the first heat dissipation device 12 is at a certain distance from the point evaporation source to prevent the heating effect from being affected.
  • a second heat dissipation device 13 is further provided in the first chamber 10, and the second heat dissipation device 13 is connected to the inner surface of the first chamber 10 and is covered
  • the first vapor deposition source heats the top of the unit 11.
  • the second heat dissipation device 13 may be covered on the top of the cylindrical first heat dissipation device 12.
  • the second heat dissipating device 13 is arranged on the top of the cylindrical first heat dissipating device 12, and can absorb the heat emitted from the top of the cylindrical first heat dissipating device 12 during the baking and cleaning process of the vapor deposition source at the point, which can improve the entire
  • the heat dissipation function of the first chamber 10 prevents the side wall of the first chamber 10 from being too hot.
  • the second heat dissipation device 13 may be a plate-shaped structure provided with a circulating cooling water pipeline.
  • the circulating cooling water pipeline can be arranged in a continuous bent cloth inside or on the surface of the plate structure.
  • the supporting portion 110 of the first vapor deposition source heating unit 11 may be fixed to the bottom of the first chamber 10 by a structure such as a flange, so as to be isolated from the bottom of the first chamber 10 to prevent spot vapor deposition.
  • the unit is too close to the bottom of the first chamber 10, causing the temperature at the bottom of the first chamber 10 to be too high.
  • the second heat dissipation device 13 may be fixed to the inner surface of the first chamber 10 by a structure such as bolts.
  • the above-mentioned fixing structure is not limited to this, and may also be other fixing structures, which is not limited in this application.
  • a third heat dissipation device 22 is further provided in the second chamber 20, and the third heat dissipation device 22 can be arranged around the accommodating groove 211, and is connected to the accommodating groove 211.
  • the outer surface of the groove 211 is separated by a second predetermined distance.
  • the third heat dissipation device 22 can protect each part of the structure located in it, and can also prevent the high temperature generated by the accommodating groove 211 from damaging the vacuum environment inside the second chamber 20 and prevent the second Other structures in the chamber 20 are damaged by high-temperature heat radiation. Furthermore, the uniformity of heating of the crucible of the linear vapor deposition source or the crucible of the surface vapor deposition source can also be maintained. In this embodiment, the third heat dissipation device 22 is at a certain distance from the linear vapor deposition source or the surface vapor deposition source to prevent the heating effect from being affected.
  • the third heat dissipation device 22 may be a rectangular parallelepiped structure with an interlayer that matches the shape of the crucible of the linear evaporation source and the crucible of the surface evaporation source.
  • the top of the rectangular parallelepiped structure is open, and the interlayer is provided with circulating cooling water pipes arranged according to a predetermined rule. road.
  • the second preset distance can be set according to actual needs. In this embodiment, there is no restriction on the specific arrangement of the circulating cooling water pipelines. For example, it may be spirally arranged in the interlayer of the rectangular parallelepiped structure.
  • the accommodating groove 211 may be formed by arranging and enclosing resistance wires according to a certain rule, and the accommodating groove 211 may be fixed on the inner surface of the third heat sink 22 by a connecting member, and is second from the inner surface of the third heat sink 22 Preset distance.
  • the application does not limit the specific structure of the connector.
  • the resistance wire can be fixed on the inner surface of the third heat sink 22 by a fixing block provided with a card slot.
  • the arrangement rules of the resistance wires can be set according to the shape of the crucible of the wire vapor deposition source or the shape of the crucible of the surface vapor deposition source, so that the crucible and the surface of the wire vapor deposition source can be better fixed.
  • Crucible of evaporation source
  • the number of accommodating grooves 211 can be more than two, and at least one of the two or more accommodating grooves 211 can be based on the crucible and surface of the linear evaporation source used in the actual production process.
  • the largest crucible among the crucibles of the evaporation source is set so that the accommodating tank 211 can accommodate crucibles of different types of wire evaporation sources and crucibles of different types of surface evaporation sources, so as to evaporate different types of wire
  • the crucible of the source and the crucibles of different types of surface evaporation sources are cleaned, which improves the versatility of the second evaporation source heating unit 21.
  • At least one of the two or more accommodating grooves 211 can be matched according to the size of the pre-melted crucible of predetermined size used in the actual production process, so that the accommodating groove 211 can exactly accommodate the pre-melted crucible of predetermined size.
  • Perform pre-melting treatment In this embodiment, the pre-melting crucible of a predetermined size is just set in the corresponding containing groove 211, which can ensure the melting effect of the organic vapor deposition material in the pre-melting crucible.
  • the organic vapor deposition material is pre-melted in the second chamber 20, and then the molten organic material is sent to the vapor deposition chamber for the vapor deposition process, which can meet the vapor deposition mass production demand and prolong the vapor deposition production time.
  • the arrangement of the resistance wires of the containing groove 211 for placing the pre-melted crucible may be different from the arrangement of the resistance wires of the containing groove 211 for the baking cleaning process, and the arrangement can be based on the actual shape of the pre-melted crucible Make settings.
  • three accommodating grooves 211 arranged side by side may be provided in the second chamber 20, and one of the accommodating grooves 211 is used for the evaporation source of the thermal radiation baking line Crucible or crucible of surface evaporation source, the other two are used to place pre-melting crucible for pre-melting treatment.
  • two accommodating grooves 211 for heat radiation cleaning may be provided in the second chamber 20, and the two accommodating grooves 211 may be respectively placed with different types of wire evaporation sources. Different types of surface evaporation sources can be used to clean the linear evaporation source and the surface evaporation source in the second chamber 20 at the same time.
  • a controller may also be provided in the second chamber 20 to control the current or voltage of the resistance wire of the accommodating slot 211, thereby controlling the heat radiation ability thereof, so that the heat radiation ability is within a required range.
  • a heat dissipation device may also be provided on the side wall of the vacuum chamber to prevent the temperature of the side wall of the vacuum chamber from being too high.
  • a first door 14 that can be opened and closed is provided at a corresponding position of the first chamber 10
  • a second door 23 that can be opened and closed is provided at a corresponding position of the second chamber 20.
  • both the first chamber 10 and the second chamber 20 have open ends, and the open end of the first chamber 10 and the open end of the second chamber 20 are both connected with a suction device 40 to maintain the first chamber.
  • the vacuum environment inside the chamber 10 and the second chamber 20, and the impurities in the two chambers can be drawn out of the chamber.
  • the air pumping device 40 of the embodiment of the present application may include a cryopump, a dry pump, and a compressor.
  • the cryopump is connected to the open ends of the two chambers, and the dry pump and the compressor are connected to the cryopump.
  • the vacuum environment may include a cryopump, a dry pump, and a compressor.
  • the present application also provides an embodiment of an evaporation system.
  • the evaporation system includes an evaporation chamber and the evaporation source cleaning equipment of the foregoing embodiment.
  • the evaporation source cleaning equipment is located outside the evaporation chamber and will not affect the evaporation process of the evaporation chamber.
  • the evaporation source cleaning equipment is an independent equipment for the point evaporation process used in the evaporation chamber.
  • the plating source, the line evaporation source and the surface evaporation source are baked clean without affecting the evaporation process, and the impurities generated during the baking process will not affect the evaporation chamber.
  • the pre-melting treatment of organic materials can also be performed in the evaporation source cleaning equipment, and the organic materials in the molten state are sent into the evaporation chamber for the evaporation process, which can improve the evaporation efficiency.
  • the evaporation system of the embodiment of the present application includes the evaporation source cleaning equipment of the above-mentioned embodiment, it also has the beneficial effects of the evaporation source cleaning equipment of the above-mentioned embodiment, which will not be repeated here.

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Abstract

一种蒸镀源清洁设备，包括：真空腔室；第一蒸镀源加热单元（11），设置于真空腔室内，第一蒸镀源加热单元（11）包括支撑部（110），支撑部（110）用于放置至少一个点蒸镀源，第一蒸镀源加热单元（11）能够提供用于清洁点蒸镀源的热辐射；第二蒸镀源加热单元（21），设置于真空腔室内，与第一蒸镀源加热单元间（11）隔分布，第二蒸镀源加热单元（21）包括用于放置线蒸镀源或面蒸镀源的至少一个容置槽（211），容置槽（211）能够提供用于清洁放置在其中的线蒸镀源或面蒸镀源的热辐射。还公开了一种蒸镀系统。

Description

蒸镀源清洁设备及蒸镀系统
相关申请的交叉引用
本申请要求享有于2019年05月29日提交的、名称为“蒸镀源清洁设备及蒸镀系统”的中国专利申请第201910459263.1号的优先权，该申请的全部内容通过引用并入本文中。
技术领域
本申请属于显示技术领域，尤其涉及一种蒸镀源清洁设备及蒸镀系统。
背景技术
有机发光二极管(Organic Light Emitting Diode，OLED)显示具有成本低、视角宽、驱动电压低、响应速度快、发光色彩丰富、制备工艺简单、可实现大面积柔性显示等优点，被认为是最具发展前景的显示技术之一。
OLED的阵列基板的蒸镀工艺通常在蒸镀设备的蒸镀腔室中进行，蒸镀过程中，蒸镀材料会残留在蒸镀源的部件如加热器和坩埚上，需要定期在蒸镀腔室进行烘烤(baking)以去除残留在加热器、坩埚内上的杂质。烘烤过程耗时较长直接影响蒸镀系统稼动率。
发明内容
第一方面，本申请提供一种蒸镀源清洁设备，包括：真空腔室；第一蒸镀源加热单元，设置于真空腔室内，第一蒸镀源加热单元包括支撑部，支撑部用于放置至少一个点蒸镀源，第一蒸镀源加热单元能够提供用于清洁点蒸镀源的热辐射；第二蒸镀源加热单元，设置于真空腔室内，与第一蒸镀源加热单元间隔分布，第二蒸镀源加热单元包括用于放置线蒸镀源或面蒸镀源的至少一个容置槽，容置槽能够提供用于清洁放置在其内的线蒸 镀源或面蒸镀源的热辐射。
本申请的第一方面提供的蒸镀源清洁设备，第一蒸镀源加热单元能够产生热辐射对放置在支撑部的点蒸镀源进行烘烤以去除点蒸镀源的杂质，实现对点蒸镀源的清洁；第二蒸镀源加热单元的容置槽能够产生热辐射对放置在其内的线蒸镀源或面蒸镀源进行烘烤以去除线蒸镀源或面蒸镀源的杂质，实现对线蒸镀源或面蒸镀源的清洁。利用本实施例的蒸镀源清洁设备能够去除点蒸镀源、线蒸镀源以及面蒸镀源的杂质，不会对蒸镀腔室的工艺造成影响，进而可以提升蒸镀效率，提升蒸镀系统稼动率。
根据本申请第一方面的实施方式，真空腔室包括相互隔离的第一腔室和第二腔室，第一蒸镀源加热单元设置于第一腔室，第二蒸镀源加热单元设置于第二腔室。以防止在第一蒸镀源加热单元和第二蒸镀源加热单元同步工作时产生的热量相互影响。
根据本申请第一方面的实施方式，支撑部包括呈阵列分布的多个支撑盘，每个支撑盘能够对应放置一个点蒸镀源，支撑盘能够产生用于清洁点蒸镀源的热辐射清洁点蒸镀源。根据本申请第一方面前述任一实施方式，或者支撑盘上设置有多个通电装置，通电装置能够与点蒸镀源的加热器电连接，以使点蒸镀源的加热器产生用于清洁的热辐射进行清洁。点蒸镀源的加热器通电产生热辐射后可以除去本身的杂质，还可以除去放置在点蒸镀源的加热器中的点蒸镀源的坩埚的杂质。通过利用现有的点蒸镀源的加热器，实现点蒸镀源自身的清洁，能够简化设备的结构。
根据本申请第一方面前述任一实施方式，通电装置上设置有第一定位结构，第一定位结构与加热器上的第二定位结构匹配。能够保证点蒸镀源的加热器与加热装置快速对接。
根据本申请第一方面前述任一实施方式，每个支撑盘能够对应放置不同型号的点蒸镀源。以提高支撑盘的兼容性。根据本申请第一方面前述任一实施方式，第一腔室内还设置有筒状的第一散热装置，第一散热装置设置于支撑部上，且包围支撑盘设置，点蒸镀源能够位于第一散热装置内，且与第一散热装置的内表面相距第一预设距离。筒状的第一散热装置能够对位于其内的各部分结构起保护作用，还可以防止其内部的支撑盘或位于 其内点蒸镀源的加热器产生的高温破坏腔室内部的真空环境，防止腔室内的其他结构受到高温热辐射损坏。进一步的，还可以保持点蒸镀源的坩埚受热的均匀性。根据本申请第一方面前述任一实施方式，第一腔室内进一步设置有第二散热装置，第二散热装置连接于第一腔室的内表面，且罩设在第一蒸镀源加热单元的顶部。第二散热装置罩设在筒状的第一散热装置的顶部，能够在吸收点蒸镀源在烘烤洁净过程中从筒状的第一散热装置的顶部散发的热量，可以提升腔室的散热功能，避免腔室的侧壁温度过高。
根据本申请第一方面前述任一实施方式，第二腔室内还设置有第三散热装置，第三散热装置能够环绕容置槽设置，且与容置槽的外表面相距第二预设距离。第三散热装置能够对位于其内的各部分结构起保护作用，还可以防止其内部的容置槽产生的高温破坏腔室内部的真空环境，防止腔室内的其他结构受到高温热辐射损坏。进一步的，还可以保持线蒸镀源的坩埚或面蒸镀源的坩埚受热的均匀性。根据本申请第一方面前述任一实施方式，容置槽的个数为两个以上，两个以上的容置槽中的至少一个容置槽能够放置不同型号的线蒸镀源或不同型号的面蒸镀源进行清洁，以提高第二蒸镀源加热单元的通用性。
第二方面，本申请提供一种蒸镀系统，包括：蒸镀腔室和上述任一实施例的蒸镀源清洁设备，其中蒸镀源清洁设备设置于蒸镀腔室外。
附图说明
下面将参考附图来描述本申请示例性实施例的特征、优点和技术效果，其中的附图并未按照实际的比例绘制。
图1是本申请实施例提供的一种蒸镀源清洁设备结构示意图；
图2是本申请实施例提供的一种蒸镀源清洁设备的打开舱门的结构视图；
图3是本申请实施例提供的一种第一蒸镀源加热单元和第一散热装置的结构示意图；
图4是本申请实施例提供的一种第二蒸镀源加热单元和第三散热装置的结构示意图；
图5是本申请实施例提供的一种第一定位结构与第二定位结构相互配合的结构示意图。
具体实施方式
下面将详细描述本申请的各个方面的特征和示例性实施例。在附图和下面的描述中，至少部分的公知结构和技术没有被示出，以便避免对本申请造成不必要的模糊；并且，为了清晰，可能夸大了部分结构的尺寸。此外，下文中所描述的特征、结构或特性可以以任何合适的方式结合在一个或更多实施例中。
下面结合图1至图5对本申请实施例的蒸镀源清洁设备及蒸镀系统进行详细说明。
请参照图1至图4所示，图1是本申请实施例提供的一种蒸镀源清洁设备的结构示意图；图2是本申请实施例提供的一种蒸镀源清洁设备的打开舱门的结构示意图；图3是本申请实施例提供的一种第一蒸镀源加热单元和第一散热装置的结构示意图；图4是本申请实施例提供的一种第二蒸镀源加热单元和第三散热装置的结构示意图。本申请实施例的蒸镀源清洁设备至少包括真空腔室、位于真空腔室内的第一蒸镀源加热单元11和第二蒸镀源加热单元21。第一蒸镀源加热单元11与第二蒸镀源加热单元21间隔分布，以防止在第一蒸镀源加热单元11与第二蒸镀源加热单元21同时工作状态下相互影响。
第一蒸镀源加热单元11包括支撑部110，支撑部110用于放置至少一个点蒸镀源，第一蒸镀源加热单元11内能够生成热辐射以对点蒸镀源烘烤进行清洁。点蒸镀源可以包括点蒸镀源的加热器以及点蒸镀源的坩埚，本申请实施例的第一蒸镀源加热单元11既可以对点蒸镀源的加热器进行清洁，也可以对点蒸镀源的坩埚进行清洁。
第二蒸镀源加热单元21包括用于放置线蒸镀源或面蒸镀源的至少一个容置槽211，在容置槽211内能够产生热辐射对放置在容置槽211内的线蒸镀源或面蒸镀源烘烤以进行清洁。线蒸镀源可以包括线蒸镀源的坩埚，可以将线蒸镀源的坩埚放置在容置槽211内进行清洁；面蒸镀源可以 包括面蒸镀源的坩埚，可以将面蒸镀源的坩埚放置在容置槽211内进行清洁。
本申请实施例中，蒸镀源清洁设备的腔室为真空状态，可以通过抽气装置对腔室进行抽气，以保持其处于真空状态，并且抽气过程中可以将第一蒸镀源加热单元和第二蒸镀源加热单元烘烤出的杂质抽出腔室外。
本申请实施例中，蒸镀源清洁设备包括在真空腔室内设置的第一蒸镀源加热单元11和第二蒸镀源加热单元21。第一蒸镀源加热单元11包括用于放置至少一个点蒸镀源的支撑部110，在第一蒸镀源加热单元11内能够产生热辐射对放置在支撑部110的点蒸镀源进行烘烤以去除点蒸镀源的杂质，实现对点蒸镀源的清洁；第二蒸镀源加热单元21包括用于放置线蒸镀源或面蒸镀源的容置槽211，容置槽211能够产生热辐射对放置在其内的线蒸镀源或面蒸镀源进行烘烤以去除线蒸镀源或面蒸镀源的杂质，实现对线蒸镀源或面蒸镀源的清洁。利用本实施例的蒸镀源清洁设备能够去除点蒸镀源、线蒸镀源以及面蒸镀源的杂质，不会对蒸镀腔室的工艺造成影响，进而可以提升蒸镀效率，提升蒸镀系统稼动率。并且，通过该蒸镀源去除点蒸镀源、线蒸镀源以及面蒸镀源的杂质后，在蒸镀生产时，能够提升蒸镀产品的质量，进而提升产品良率和产品性能。
在一些可选的实施例中，真空腔室可以包括相互隔离的第一腔室10和第二腔室20，其中第一蒸镀源加热单元11设置于第一腔室10内，第二蒸镀源加热单元21设置于第二腔室20内，以进一步防止在二者同步工作时产生的热量相互影响。可选的，第一腔室10与第二腔室20之间可以通过隔热板30进行隔离。
请参阅图3所示，本实施例的第一蒸镀源加热单元11的支撑部110包括呈阵列分布的多个支撑盘111，每个支撑盘111能够对应设置一个点蒸镀源。例如，支撑盘111可以为四个，四个支撑盘111可以呈矩形分布，以节省占用的空间。本实施例的每个支撑盘111可以对应设置不同型号的点蒸镀源，以保证支撑盘111的兼容性。
在一些可选的实施例中，支撑盘111自身能够产生热辐射以清洁设置在其上的点蒸镀源。例如在支撑盘111内可以设置电阻丝，对电阻丝通电 以产生热辐射对点蒸镀源进行烘烤实现清洁功能。
在另一些可选的实施例中，支撑盘111上可以设置有多个通电装置(图中未示出)，通电装置能够与点蒸镀源的加热器电连接，以使点蒸镀源的加热器能够产生热辐射。点蒸镀源的加热器通电产生热辐射后可以除去本身的杂质，还可以除去放置在点蒸镀源的加热器中的点蒸镀源的坩埚的杂质。本实施例中，通过利用现有的点蒸镀源的加热器，实现点蒸镀源自身的清洁，能够简化设备的结构。
进一步的，为了保证点蒸镀源的加热器能够与加热装置快速对接，可以在加热装置和点蒸镀源的加热器上设置相互匹配的连接结构。例如，请参阅图5所示，图5是本申请实施例提供的一种第一定位结构与第二定位结构相互配合的结构示意图。在通电装置上设置第一定位结构1110，在点蒸镀源的加热器上设置与第一定位结构匹配的第二定位结构61，第一定位结构1110可以是凹槽或凸起中的一者，第二定位结构61可以是凹槽或凸起的另一者。图5中仅以在通电装置上设置凹槽，点蒸镀源的加热器上设置凸起为例进行示意。
可选的，在第一腔室10内还可以设置有控制器以对设置在支撑盘111的电阻丝以及通电装置的电流或电压进行控制，进而控制其热辐射能力，以使热辐射能力在所需范围内。
在一些可选的实施例中，在第一腔室10内还设置有筒状的第一散热装置12。第一散热装置12可以设置在支撑部110上，且能够包围支撑盘111设置，每个支撑盘111对应设置有一个第一散热装置12。点蒸镀源设置在对应的支撑盘111上能够位于第一散热装置12内，并且与第一散热装置12的内表面相距第一预设距离。
筒状的第一散热装置12可以为具有夹层的双层筒状体，在夹层内设置有按照预定规则排布的循环冷却水管路。第一预设距离可以根据实际需要进行设定。本实施例中，对于循环冷却水管路的具体排布方式不做限制，例如可以为螺旋状设置在双层筒状体的夹层内。
本实施例中，筒状的第一散热装置12能够对位于其内的各部分结构起保护作用，还可以防止其内部的支撑盘111或位于其内点蒸镀源的加热 器产生的高温破坏第一腔室10内部的真空环境，防止第一腔室10内的其他结构受到高温热辐射损坏。进一步的，还可以保持点蒸镀源的坩埚受热的均匀性。本实施例中，第一散热装置12与点蒸镀源相距一定距离，防止对加热效果产生影响。
在一些可选的实施例中，参阅图2所示，第一腔室10内还设置有第二散热装置13，第二散热装置13连接于第一腔室10的内表面，且罩设在第一蒸镀源加热单元11的顶部。可选的，第二散热装置13可以罩设在筒状的第一散热装置12的顶部。第二散热装置13罩设在筒状的第一散热装置12的顶部，能够在吸收点蒸镀源在烘烤洁净过程中从筒状的第一散热装置12的顶部散发的热量，可以提升整个第一腔室10的散热功能，避免第一腔室10的侧壁温度过高。
可选的，第二散热装置13可以为设置有循环冷却水管路的板状结构。本实施例中循环冷却水管路可以呈连续的弯折状布设置在板状结构内部或表面。
上述实施例中，第一蒸镀源加热单元11的支撑部110例如可以通过法兰等结构固定在第一腔室10的底部，以与第一腔室10的底部隔离开，防止点蒸镀单元距离第一腔室10的底部过近，导致第一腔室10底部温度过高。第二散热装置13可以通过螺栓等结构固定在第一腔室10的内表面。但是上述固定结构不限于此，也可以为其他固定结构，对此本申请不做限制。
在一些可选的实施例中，请参阅图2和图4所示，第二腔室20内还设置有第三散热装置22，第三散热装置22能够环绕容置槽211设置，且与容置槽211的外表面相距第二预设距离。
本实施例中，第三散热装置22能够对位于其内的各部分结构起保护作用，还可以防止其内部的容置槽211产生的高温破坏第二腔室20内部的真空环境，防止第二腔室20内的其他结构受到高温热辐射损坏。进一步的，还可以保持线蒸镀源的坩埚或面蒸镀源的坩埚受热的均匀性。本实施例中，第三散热装置22与线蒸镀源或面蒸镀源相距一定距离，防止对加热效果产生影响。
第三散热装置22可以为与线蒸镀源的坩埚以及面蒸镀源的坩埚形状相匹配的具有夹层的长方体结构，该长方体结构顶部开口，夹层中设置有按照预定规则排布的循环冷却水管路。第二预设距离可以根据实际需要进行设定。本实施例中，对于循环冷却水管路的具体排布方式不做限制，例如可以为螺旋状设置在长方体结构的夹层内。
容置槽211可以由电阻丝按照一定的规则排布围合形成，并且容置槽211可以通过连接件固定在第三散热装置22的内表面，并且距离第三散热装置22的内表面第二预设距离。对于连接件的具体结构本申请不做限制，例如可以通过设置有卡槽的固定块将电阻丝固定在第三散热装置22的内表面。
需要说明的是，电阻丝的排布规则可以根据线蒸镀源的坩埚的形状或面蒸镀源的坩埚的形状进行设定，以使其可以更好的固定线蒸镀源的坩埚和面蒸镀源的坩埚。
在一些可选的实施例中，容置槽211的个数可以为两个以上，两个以上的容置槽211中至少一个可以根据实际生产过程中所使用的线蒸镀源的坩埚以及面蒸镀源的坩埚中最大尺寸的坩埚进行设置，以使该容置槽211可以容纳不同型号的线蒸镀源的坩埚和不同型号的面蒸镀源的坩埚，以对不同型号的线蒸镀源的坩埚以及不同型号的面蒸镀源的坩埚进行清洁，提高第二蒸镀源加热单元21的通用性。
进一步的，两个以上的容置槽211中至少一个可以根据实际生产过程中所使用的预定尺寸的预熔融坩埚的尺寸相匹配，以使该容置槽211可以恰好容纳预定尺寸的预熔融坩埚，进行预熔融处理。本实施例中，预定尺寸的预熔融坩埚恰好设置在对应的容置槽211内，可以保证预熔融坩埚内有机蒸镀材料的熔融效果。在第二腔室20内对有机蒸镀材料进预熔融处理，再将熔融的有机材料送入蒸镀腔室进行蒸镀工艺，可以满足蒸镀量产需求，延长蒸镀生产时长。放置预熔融坩埚的容置槽211的电阻丝的排布方式可以与进行烘烤清洁工艺的容置槽211的电阻丝的排布方式不同，其排布方式可以根据实际的预熔融坩埚的形状进行设置。
可选的，请参阅图2和图4所示，在第二腔室20内可以设置三个并排 设置的容置槽211，其中一个容置槽211用于热辐射烘烤线蒸镀源的坩埚或面蒸镀源的坩埚，另外两个用于放置预熔融坩埚进行预熔融处理。
在另一些可选的实施例中，在第二腔室20内可以设置有两个用于热辐射清洁的容置槽211，这两个容置槽211可以分别放置不同型号的线蒸镀源和不同型号的面蒸镀源，以在第二腔室20内可以同时对线蒸镀源和面蒸镀源进行清洁。
在第二腔室20内也可以设置有控制器以对容置槽211的电阻丝电流或电压进行控制，进而控制其热辐射能力，以使热辐射能力在所需范围内。
上述实施例中，参考图1，在真空腔室的侧壁上还可以设置有散热装置，以防止真空腔室侧壁的温度过高。在第一腔室10对应位置设置有可开合的第一舱门14，第二腔室20对应位置设置有可开合的第二舱门23。
上述实施例中，第一腔室10和第二腔室20均具有开口端，第一腔室10的开口端与第二腔室20的开口端均连接有抽气装置40，以保持第一腔室10和第二腔室20内部的真空环境，并且可以将两个腔室内的杂质抽出腔室外。
本申请实施例的抽气装置40可以包括低温泵、干泵和压缩机，其中低温泵与两个腔室的开口端连接，干泵和压缩机连接至低温泵，通过三者配合保持腔室内的真空环境。
本申请还提供了一种蒸镀系统的实施例，蒸镀系统包括蒸镀腔室和上述实施例的蒸镀源清洁设备。其中，蒸镀源清洁设备位于蒸镀腔室外，不会对蒸镀腔室的蒸镀工艺产生影响，蒸镀源洁净设备作为独立的设备对蒸镀腔室中蒸镀工艺用到的点蒸镀源、线蒸镀源和面蒸镀源进行烘烤洁净，不会影响蒸镀过程，且在烘烤过程中产生的杂质也不会对蒸镀腔室产生影响。
进一步的，在蒸镀源清洁设备中还可以进行有机材料的预熔融处理，将熔融状态的有机材料送入蒸镀腔室中进行蒸镀工艺，可以提高蒸镀效率。
由于本申请实施例的蒸镀系统包括上述实施例的蒸镀源洁净设备，其 还具有上述实施例的蒸镀源清洁设备的有益效果，在此不再赘述。
虽然已经参考优选实施例对本申请进行了描述，但在不脱离本申请的范围的情况下，可以对其进行各种改进并且可以用等效物替换其中的部件。尤其是，只要不存在结构冲突，各个实施例中所提到的各项技术特征均可以任意方式组合起来。本申请并不局限于文中公开的特定实施例，而是包括落入权利要求的范围内的所有技术方案。

Claims (18)

  1. 一种蒸镀源清洁设备，包括：
    真空腔室；
    第一蒸镀源加热单元，设置于所述真空腔室内，所述第一蒸镀源加热单元包括支撑部，所述支撑部用于放置至少一个点蒸镀源，所述第一蒸镀源加热单元能够提供用于清洁所述点蒸镀源的热辐射；
    第二蒸镀源加热单元，设置于所述真空腔室内，与所述第一蒸镀源加热单元间隔分布，所述第二蒸镀源加热单元包括用于放置线蒸镀源或面蒸镀源的至少一个容置槽，所述容置槽能够提供用于清洁放置在其中的所述线蒸镀源或所述面蒸镀源的热辐射。
  2. 根据权利要求1所述的蒸镀源清洁设备，其中，所述真空腔室包括相互隔离的第一腔室和第二腔室，所述第一蒸镀源加热单元设置于所述第一腔室，所述第二蒸镀源加热单元设置于所述第二腔室。
  3. 根据权利要求2所述的蒸镀源清洁设备，其中，所述支撑部包括呈阵列分布的多个支撑盘，每个所述支撑盘能够对应放置一个所述点蒸镀源。
  4. 根据权利要求2所述的蒸镀源清洁设备，其中，所述支撑盘上设置有多个通电装置，所述通电装置能够与所述点蒸镀源的加热器电连接，以使所述点蒸镀源的加热器产生用于清洁的热辐射。
  5. 根据权利要求4所述的蒸镀源清洁设备，其中，所述通电装置上设置有第一定位结构，所述第一定位结构与所述加热器上的第二定位结构匹配。
  6. 根据权利要求3或4所述的蒸镀源清洁设备，其中，每个所述支撑盘能够对应放置不同型号的所述点蒸镀源。
  7. 根据权利要求3或4所述的蒸镀源清洁设备，其中，所述第一腔室内还设置有筒状的第一散热装置，所述第一散热装置设置于所述支撑部上，且包围所述支撑盘设置，所述点蒸镀源能够位于所述第一散热装置内，且与所述第一散热装置的内表面相距第一预设距离。
  8. 根据权利要求7所述的蒸镀源清洁设备，其中，所述第一散热装置包括具有夹层的双层的筒状体以及设置于所述夹层按照预定规则排布的循环冷却水管路。
  9. 根据权利要求2所述的蒸镀源清洁设备，其中，所述第一腔室内进一步设置有第二散热装置，所述第二散热装置连接于所述第一腔室的内表面，且罩设在所述第一蒸镀源加热单元的顶部。
  10. 根据权利要求9所述的蒸镀源清洁设备，其中，所述第二散热装置包括设置有循环冷却水管路的板状结构。
  11. 根据权利要求2所述的蒸镀源清洁设备，其中，所述第二腔室内还设置有第三散热装置，所述第三散热装置能够环绕所述容置槽设置，且与所述容置槽的外表面相距第二预设距离。
  12. 根据权利要求11所述的蒸镀源清洁设备，其中，所述第三散热装置包括与所述线蒸镀源的坩埚以及所述面蒸镀源的坩埚形状相匹配的具有夹层的长方体结构，所述长方体结构顶部开口，所述夹层中设置有按照预定规则排布的循环冷却水管路。
  13. 根据权利要求2所述的蒸镀源清洁设备，其中，所述容置槽的个数为两个以上，至少一个所述容置槽能够放置不同型号的线蒸镀源或不同型号的面蒸镀源。
  14. 根据权利要求2所述的蒸镀源清洁设备，其中，至少一个所述容置槽与预定尺寸的预熔融坩埚相匹配，以放置预熔融坩埚进行预熔融处理。
  15. 根据权利要求2所述的蒸镀源清洁设备，其中，所述第一腔室与所述第二腔室均具有开口端；
    所述蒸镀源清洁设备进一步包括抽气装置，所述抽气装置对应连接至所述第一腔室的所述开口端与所述第二腔室的所述开口端。
  16. 根据权利要求2所述的蒸镀源清洁设备，其中，所述第一腔室与所述第二腔室之间设置有隔热板。
  17. 根据权利要求1所述的蒸镀源清洁设备，其中，所述第一腔室的侧壁设置有可开合的第一舱门；
    所述第二腔室的侧壁设置有可开合的第二舱门。
  18. 一种蒸镀系统，包括：
    蒸镀腔室；
    权利要求1至17任一项所述的蒸镀源清洁设备，所述蒸镀源清洁设备设置于所述蒸镀腔室外。
PCT/CN2019/119959 2019-05-29 2019-11-21 蒸镀源清洁设备及蒸镀系统 WO2020238080A1 (zh)

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