WO2020235912A1 - 기판처리장치 - Google Patents

기판처리장치 Download PDF

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Publication number
WO2020235912A1
WO2020235912A1 PCT/KR2020/006526 KR2020006526W WO2020235912A1 WO 2020235912 A1 WO2020235912 A1 WO 2020235912A1 KR 2020006526 W KR2020006526 W KR 2020006526W WO 2020235912 A1 WO2020235912 A1 WO 2020235912A1
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WIPO (PCT)
Prior art keywords
gas
region
injection
area
purge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2020/006526
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English (en)
French (fr)
Korean (ko)
Inventor
김종식
황철주
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jusung Engineering Co Ltd
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Jusung Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jusung Engineering Co Ltd filed Critical Jusung Engineering Co Ltd
Priority to JP2021568395A priority Critical patent/JP7751488B2/ja
Priority to CN202080032658.4A priority patent/CN113785086A/zh
Priority to US17/436,651 priority patent/US20220186373A1/en
Publication of WO2020235912A1 publication Critical patent/WO2020235912A1/ko
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45517—Confinement of gases to vicinity of substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0441—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7614—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7621—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting two or more semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Definitions

  • the present invention relates to a substrate processing apparatus that performs a processing process such as a deposition process and an etching process on a substrate.
  • a predetermined thin film layer, a thin film circuit pattern, or an optical pattern must be formed on a substrate.
  • substrates such as a deposition process of depositing a thin film of a specific material on a substrate, a photo process of selectively exposing a thin film using a photosensitive material, and an etching process of forming a pattern by selectively removing the exposed portion of the thin film.
  • the treatment process takes place.
  • the processing of such a substrate is performed by a substrate processing apparatus.
  • a substrate processing apparatus includes a substrate support unit supporting a substrate, a rotating unit continuously rotating the substrate support unit about a rotation axis, a first injection unit for injecting a first gas toward a first injection space on the substrate support unit, And a second injection unit for injecting a second gas toward the second injection space on the substrate support.
  • the rotation unit moves the substrate to the first injection space
  • the substrate support is continuously rotated so as to sequentially and repeatedly pass through the second injection space. Accordingly, after an adsorption process in which the first gas is adsorbed to the substrate in the first injection space is performed, the first gas adsorbed on the substrate in the second injection space and the second gas injected by the second injection unit react.
  • a deposition process in which a thin film is deposited is performed. Accordingly, a thin film is deposited on the substrate by atomic layer deposition (ALD).
  • ALD atomic layer deposition
  • the rotation unit continuously rotates the substrate support unit, the adsorption process is implemented while the substrate is rotating.
  • the adsorption process cannot be properly performed in the first injection space due to centrifugal force acting as the substrate continuously rotates.
  • the first gas that has not been adsorbed to the substrate in the second injection space and the second gas injected by the second injection unit react from the upper side of the substrate to a chemical vapor deposition method on the substrate. Since the thin film is deposited by (CVD), there is a problem that the film quality of the thin film deposited on the substrate is deteriorated.
  • the present invention has been devised to solve the above-described problems, and is to provide a substrate processing apparatus capable of preventing deterioration of the film quality of a thin film deposited on a substrate.
  • the present invention may include the following configuration.
  • the substrate processing apparatus includes a support portion for supporting a substrate, a lid disposed upwardly from the support portion, a first injection portion coupled to the lead and injecting a first gas into a first region, and the lead.
  • a second injection unit coupled to the second region for injecting a second gas, a purge unit coupled to the lead and configured to inject a purge gas into a third region disposed between the first region and the second region, and the It may include a rotating part for rotating the support.
  • the rotation unit rotates the support unit so that the substrate moves between the first region and the second region, and a treatment process using a first gas is performed in the first region, and treatment using a second gas in the second region During the process, the support can be stopped.
  • the lower surface of the first injection part may be arranged such that the lower surface of the second injection part is spaced apart from the support by a shorter distance than the distance separated from the support part.
  • the present invention allows the substrate to be moved between the first region and the second region through rotation of the support part, and at the same time, a treatment process using the first gas and a treatment process using the second gas are performed while the rotation of the support part is stopped. Is implemented. Therefore, the present invention can improve the film quality of the thin film by improving the stability of the process of depositing the thin film by the atomic layer deposition (ALD) method.
  • ALD atomic layer deposition
  • FIG. 1 is a schematic exploded perspective view of a substrate processing apparatus according to the present invention
  • FIG. 2 is a schematic side cross-sectional view showing a substrate processing apparatus according to the present invention based on line I-I of FIG. 1
  • FIG. 3 is a schematic plan view of a support part in a substrate processing apparatus according to the present invention
  • FIG. 4 is a schematic plan view of a lead in a substrate processing apparatus according to the present invention.
  • FIG. 5 is a schematic side cross-sectional view showing an embodiment in which a first injection unit and a second injection unit are disposed in the substrate processing apparatus according to the present invention, based on line I-I of FIG.
  • FIGS. 6 and 7 are schematic side cross-sectional views of an embodiment of an injection module in the substrate processing apparatus according to the present invention.
  • FIG. 8 is a schematic cross-sectional plan view of a purge unit in the substrate processing apparatus according to the present invention based on line II-II of FIG.
  • FIG. 9 is a schematic side cross-sectional view showing an embodiment in which a purge unit is disposed in a substrate processing apparatus according to the present invention, based on line I-I of FIG. 1;
  • 10 to 12 are schematic plan views of a support part in a substrate processing apparatus according to the present invention.
  • FIG. 13 is a schematic side cross-sectional view showing a support part based on the line III-III of FIG. 12 in the substrate processing apparatus according to the present invention
  • the substrate processing apparatus 1 performs a processing process on the substrate S.
  • the substrate S may be a glass substrate, a silicon substrate, a metal substrate, or the like.
  • the substrate processing apparatus 1 according to the present invention may perform a deposition process of depositing a thin film on the substrate S, an etching process of removing a part of the thin film deposited on the substrate S, and the like.
  • description will be made based on an embodiment in which the substrate processing apparatus 1 according to the present invention performs the deposition process, but from this, the substrate processing apparatus 1 according to the present invention performs other processing processes such as the etching process. It will be apparent to one of ordinary skill in the art to derive the following examples.
  • the substrate processing apparatus 1 includes a support part 2, a lead 3, a first injection part 4, a second injection part 5, a purge part 6, and a rotation part 7 can do.
  • the support part 2 supports the substrate S.
  • the support 2 may be coupled to the interior of the chamber 1a providing a processing space in which the processing process is performed.
  • the processing space may be disposed between the support 2 and the lid 3.
  • a substrate outlet (not shown) may be coupled to the chamber 1a.
  • the substrates S may be carried into the chamber 1a through the substrate exit port by a loading device (not shown).
  • the substrates S may be carried out to the outside of the chamber 1a by passing through the substrate entrance and exit port by an unloading device (not shown).
  • An exhaust unit 1b (shown in FIG. 2) for exhausting gas, etc. existing in the processing space to the outside may be coupled to the chamber 1a.
  • the support part 2 may include a seating member 21 on which the substrate S is seated.
  • the seating member 21 may be coupled to the support 2 so as to be disposed between the support 2 and the lid 3. That is, the seating member 21 may be coupled to the upper surface 2a of the support part 2.
  • the substrate S may be mounted on the mounting member 21 so as to protrude upward (in the direction of an arrow UD) of the mounting member 21.
  • the upward direction (direction of arrow UD) may be a direction from the support 2 toward the lead 3.
  • the mounting member 21 may include a mounting groove (not shown) into which the substrate S is inserted. In this case, the substrate S may be seated on the seating member 21 by being inserted into the seating groove.
  • the seating member 21 and the support 2 may be integrally formed.
  • the seating member 21 may protrude from the upper surface 2a of the support part 2 in the upward direction (direction of an arrow UD). Accordingly, the upper surface of the substrate S may be disposed at a position spaced apart from the upper surface 2a of the support part 2 in the upward direction (direction of an arrow UD). Accordingly, the substrate processing apparatus 1 according to the present invention can implement a suppression force to suppress the gas from invading toward the upper surface of the substrate S while the gas is exhausted from the processing space to the outside of the chamber 1a. have. Accordingly, the substrate processing apparatus 1 according to the present invention can improve the quality of the substrate S on which the processing process is completed.
  • the support part 2 may include a plurality of the seating members 21. Accordingly, the support part 2 may be implemented to support a plurality of the substrates S.
  • the seating members 21 may be disposed to be spaced apart from each other. Accordingly, the substrates S may be disposed to be spaced apart from each other.
  • the lead 3 is disposed to be spaced apart from the support 2 in the upward direction (in the direction of the arrow UD).
  • the lid 3 may be coupled to the chamber 1a to cover the upper portion of the chamber 1a.
  • the lid 3 and the chamber 1a may be formed in a hexagonal structure as shown in FIG. 1, but are not limited thereto, and may be formed in a polygonal structure such as a cylindrical structure, an elliptical structure, or an octagon.
  • the first injection part 4 injects a first gas.
  • the first injection part 4 may be coupled to the lead 3 so as to be spaced apart from the support part 2 in the upward direction (direction of an arrow UD).
  • the first injection part 4 may inject the first gas through a plurality of first injection holes.
  • the first injection part 4 may inject the first gas into the first area A1 (shown in FIG. 3 ). Accordingly, a treatment process using the first gas may be performed in the first region A1.
  • the first area A1 is an area in which the first gas is injected, and may be an area disposed between the support 2 and the first injection unit 4.
  • a lower surface 4a of the first injection unit 4 may be disposed in the upper direction (in the direction of an arrow UD) of the first area A1.
  • the lower surface 4a of the first injection unit 4 may be a surface of the first injection unit 4 facing downward (in the direction of the DD arrow).
  • the downward direction (the direction of the DD arrow) may be a direction opposite to the upward direction (the direction of the UD arrow).
  • the first injection unit 4 may be connected to the supply unit 10 (shown in FIG. 2) through a hose or a pipe.
  • the supply unit 10 supplies the first gas.
  • the first gas may be a precursor constituting a source material of a thin film deposited on the substrate S.
  • the first injection unit 4 may include a first injection module 41 (shown in FIG. 4) for injecting the first gas.
  • the first injection module 41 injects the first gas into the first area A1.
  • the first injection module 41 may inject the first gas into the first area A1 through the first injection holes.
  • the first injection module 41 may be coupled to a first injection body 42 (shown in FIG. 4) of the first injection unit 4.
  • the first injection body 42 is coupled to the lid 3.
  • the first injection module 41 may be coupled to the lid 3 through the first injection body 42.
  • the first injection module 41 may be formed to have a larger size than that of the substrate S.
  • a plurality of first injection modules 41 may be coupled to the first injection body 42.
  • a plurality of substrates S may be disposed in the first region A1.
  • the substrate processing apparatus 1 processes a plurality of substrates S using the first gas injected by the plurality of first injection modules 41 in the first region A1. Since can be performed, it is possible to increase the throughput of the treatment process using the first gas.
  • 2N N is an integer greater than 0 number of first injection modules 41 may be coupled to the first injection body 42.
  • the first injection part 4 may include a first sealing member 43 (shown in FIG. 4 ).
  • the first sealing member 43 seals a gap between the first injection body 42 and the lid 3.
  • the first sealing member 43 may be disposed to surround the outside of the first injection modules 41. That is, the first injection modules 41 may be located inside the first sealing member 43. Accordingly, in the substrate processing apparatus 1 according to the present invention, since the first sealing member 43 is not located between the first injection modules 41, the distance between the first injection modules 41 ( 41D, shown in Fig. 4) can be reduced. Accordingly, since the substrate processing apparatus 1 according to the present invention can reduce the size of the first injection unit 4, it can be implemented so that the overall size can be reduced.
  • the second injection unit 5 injects a second gas.
  • the second injection part 5 may be coupled to the lid 3 so as to be spaced apart from the support part 2 in the upward direction (direction of an arrow UD). Based on the purge part 6, the second injection part 5 and the first injection part 4 may be disposed opposite to each other.
  • the second injection part 5 may inject the second gas through a plurality of second injection holes.
  • the second injection part 5 may inject the second gas into the second area A2 (shown in FIG. 3 ). Accordingly, in the second area A2, a treatment process using the second gas may be performed.
  • the second area A2 is an area in which the second gas is injected, and may be an area disposed between the support part 2 and the second injection part 5.
  • a lower surface 5a of the second injection part 5 may be disposed in the upper direction (in the direction of the UD arrow) of the second area A2.
  • the lower surface 5a of the second injection part 5 may be a surface of the second injection part 5 facing downward (in the direction of the DD arrow).
  • the second area A2 may be disposed at a position spaced apart from the first area A1.
  • the second injection unit 5 may be connected to the supply unit 10 (shown in FIG. 2) through a hose or a pipe.
  • the supply unit 10 may include a first supply mechanism for supplying the first gas and a second supply mechanism for supplying the second gas.
  • the first supply mechanism may be connected to the first injection unit 4 to supply the first gas to the first injection unit 4.
  • the second supply mechanism may be connected to the second injection unit 5 to supply the second gas to the second injection unit 5.
  • the first gas is a source gas
  • the second gas may be a reaction gas.
  • the second injection unit 5 may include a second injection module 51 (shown in FIG. 4) for injecting the second gas.
  • the second injection module 51 injects the second gas into the second area A2.
  • the second injection module 51 may inject the second gas into the second area A2 through the second injection holes.
  • the second injection module 51 may be coupled to a second injection body 52 (shown in FIG. 4) of the second injection unit 5.
  • the second injection body 52 is coupled to the lid 3.
  • the second injection module 51 may be coupled to the lid 3 through the second injection body 52.
  • the second injection module 51 may be formed to have a larger size than that of the substrate S.
  • a plurality of second injection modules 51 may be coupled to the second injection body 52.
  • a plurality of substrates S may be disposed in the second region A2.
  • the substrate processing apparatus 1 processes a plurality of substrates S using the second gas injected by the plurality of second injection modules 51 in the second area A2. Since can be performed, it is possible to increase the throughput of the treatment process using the second gas.
  • 2N second injection modules 51 may be coupled to the second injection body 52.
  • the second injection module 51 and the first injection module 41 may be provided in the same number.
  • the second injection part 5 may include a second sealing member 53 (shown in FIG. 4 ).
  • the second sealing member 53 seals a gap between the second injection body 52 and the lid 3.
  • the second sealing member 53 may be disposed to surround the outside of the second injection modules 51. That is, the second injection modules 51 may be located inside the second sealing member 53. Accordingly, in the substrate processing apparatus 1 according to the present invention, since the second sealing member 53 is not located between the second injection modules 51, the gap between the second injection modules 51 ( 51D, shown in Fig. 4) can be reduced. Accordingly, the substrate processing apparatus 1 according to the present invention can reduce the size of the second injection unit 5, so that the overall size can be reduced.
  • the lower surface 5a of the second injection part 5 is a longer distance than the distance 4a of the first injection part 4 is separated from the support part 2 It can be arranged to be spaced apart from the support (2).
  • the first separation distance L1 at which the lower surface 4a of the first injection unit 4 is spaced apart from the support unit 2 is the lower surface 5a of the second injection unit 5 is the support unit 2 ) May be formed shorter than the second separation distance (L2) spaced from. Accordingly, in the substrate processing apparatus 1 according to the present invention, the flow rate of the second gas injected through the second injection unit 5 is proportional to the flow rate of the first gas injected through the first injection unit 4.
  • the partial pressure refers to the pressure expressed by each component gas in the mixed gas, which is proportional to the flow rate of the gas and inversely proportional to the size of the area where the gas is injected. Therefore, in the substrate processing apparatus 1 according to the present invention, even if the second gas is injected larger than the flow rate of the first gas, the second area A2 has a larger size than the first area A1. Since it is formed of, it is possible to reduce the difference in partial pressure between the first region A1 and the second region A2.
  • the substrate processing apparatus 1 prevents the first gas from penetrating into the second region A2 and prevents the first gas from penetrating into the second region A2 during a processing process using the first gas and the second gas. 2
  • the substrate processing apparatus 1 can improve the quality of the substrate on which the processing process is completed by preventing the film quality from deteriorating due to the mixing of the first gas and the second gas.
  • the lower surface 5a of the second injection part 5 may be disposed to be spaced apart from the lower surface 3a of the lead 3 toward the upper side (in the direction of the arrow UD).
  • the lower surface 4a of the first injection unit 4 may be disposed to be spaced apart from the lower surface 3a of the lead 3 toward the lower side (in the direction of the DD arrow).
  • the second area A2 is implemented to have a larger size than the first area A1, so that the second gas is more than the first gas. Even if sprayed on the support part 2 at a large flow rate, a gas partial pressure difference between the first region A1 and the second region A2 may be reduced.
  • the lower surface 3a of the lead 3 may be a surface of the lead 3 facing downward (in the direction of the DD arrow).
  • the first injection unit ( The lower surface 4a of 4) may be disposed to be positioned at the same height as the lower surface 3a of the lead 3. Accordingly, in the substrate processing apparatus 1 according to the present invention, since the second area A2 is implemented to have a larger size than the first area A1, the first area A1 and the second area The gas partial pressure difference between (A2) can be reduced.
  • the lower surface (5a) of the second injection part (5) is the support part (2) at a distance of 3 to 15 times the distance that the lower surface (4a) of the first injection part (4) is spaced apart from the support part (2). It can be arranged to be spaced apart from In this case, the distance between the lower surface 5a of the second injection unit 5 and the support unit 2 is the distance between the lower surface 4a of the first injection unit 4 and the support unit 2 It may be 3 times or more and 15 times or less.
  • the first separation distance L1 may be formed to be more than 0 mm and 5 mm or less
  • the second separation distance L2 may be formed to be 3 mm or more and 15 mm or less.
  • the second area A2 is implemented to have a larger size than the first area A1, so that the second gas is more than the first gas. Even if sprayed on the support part 2 at a large flow rate, a gas partial pressure difference between the first region A1 and the second region A2 may be reduced.
  • the second injection unit 5 is located in the second area A2 having a larger volume than the first area A1 in which the first injection unit 4 injects the first gas.
  • the second gas can be injected. Accordingly, the substrate processing apparatus 1 according to the present invention provides the first region A1 and the second region even if the second gas is injected onto the support 2 at a higher flow rate than the first gas.
  • FIG. 4 An embodiment of the injection module 30 for the second injection module 51 (shown in FIG. 4) and the first injection module 41 (shown in FIG. 4) will be described in detail with reference to FIGS. 4 to 7 Looking at it, it is as follows.
  • the injection module 30 includes a module body 31, a plurality of injection holes 32 for injecting gas toward the support 2, and a delivery hole to which the injection holes 32 are connected. (33) may be included.
  • the delivery hole 33 may be connected to the supply unit 10 (shown in FIG. 2 ). Accordingly, the gas supplied by the supply unit 10 (shown in FIG. 2) may flow along the delivery hole 33 and be sprayed to the support 2 through the injection holes 32.
  • a plasma generator may be connected to the injection module 30. In this case, the injection module 30 may activate a gas using plasma and inject the activated gas toward the support 2.
  • the injection module 30 may include a first electrode 34 and a second electrode 35.
  • a plurality of protruding electrodes 36 may be formed on the first electrode 34.
  • a plurality of electrode holes 37 may be formed in the second electrode 35.
  • the first electrode 34 and the second electrode 35 may be disposed so that the protruding electrodes 36 are inserted into each of the electrode holes 37.
  • the injection holes 32 and the transfer holes 33 may be formed in the first electrode 34.
  • the injection module 30 may generate plasma. Accordingly, the injection module 30 may activate the gas in the space 38 formed between the first electrode 34 and the second electrode 35 using plasma. The gas that has sequentially moved the delivery hole 33 and the injection hole 32 may be activated in the spacing space 38 and injected toward the support part 2.
  • the first injection unit 4 and the second injection unit 5 may be implemented to include different types of injection modules 30.
  • the first injection unit 4 includes the showerhead type injection module 30 shown in FIG. 6, and the second injection unit 5 is the electrode structure type injection module shown in FIG. 30) may be included.
  • the first injection unit 4 includes the injection module 30 of the electrode structure type shown in FIG. 7, and the second injection unit 5 is the showerhead type injection module shown in FIG. 30) may also be included.
  • the present invention may be implemented so that the second injection unit 5 injects the second gas into the spaced space 38. Accordingly, the substrate processing apparatus 1 according to the present invention secures an additional injection space for the second gas through the separation space 38, so that even if the flow rate of the second gas is increased, the first area A1 ) And the second region A2 may be implemented to reduce a difference in partial pressure.
  • the first injection unit 4 and the second injection unit 5 may be implemented to include injection modules 30 of the same type.
  • the first injection unit 4 and the second injection unit 5 may each include a showerhead type injection module 30 shown in FIG. 6.
  • the first injection unit 4 and the second injection unit 5 may each include an injection module 30 of the electrode structure type shown in FIG. 7.
  • the purge unit 6 injects a purge gas.
  • the purge unit 6 may divide the first region A1 and the second region A2 by injecting a purge gas into the third region A3. Accordingly, the purge unit 6 may prevent the first gas injected into the first area A1 and the second gas injected into the second area A2 from being mixed with each other.
  • the third area A3 may be disposed between the first area A1 and the second area A2.
  • the third area A3 is an area in which the purge gas is injected, and may be an area disposed between the support part 2 and the purge part 6.
  • a lower surface 6a of the purge part 6 may be disposed in the upper direction (direction of an arrow UD) of the third area A3.
  • the lower surface 6a of the purge part 6 may be a surface of the purge part 6 facing downward (in the direction of the DD arrow).
  • the purge unit 6 may be connected to the supply unit 10 (shown in FIG. 2) through a hose or a pipe.
  • the supply unit 10 may include a third supply mechanism for supplying the purge gas.
  • the third supply mechanism may be connected to the purge part 6 to supply the purge gas to the purge part 6.
  • the lower surface 6a of the purge part 6 is the support part (6a) at a shorter distance than the distance that the lower surface 4a of the first injection part 4 is spaced apart from the support part 2 2) can be arranged to be spaced apart. Accordingly, in the substrate processing apparatus 1 according to the present invention, the purge unit 6 further protrudes toward the support unit 2 compared to the first injection unit 4, thereby providing a gas barrier using the purge gas and the Through the physical barrier using the arrangement of the purge unit 6, the partitioning force of the purge unit 6 to divide the first region A1 and the second region A2 may be improved.
  • the substrate processing apparatus 1 has a preventive force that prevents mixing of the first gas injected into the first area A1 and the second gas injected into the second area A2.
  • the lower surface 6a of the purge part 6 is arranged so that the lower surface 5a of the second injection part 5 is spaced apart from the support part 2 by a shorter distance than the distance separated from the support part 2 It could be.
  • the lower surface 6a of the purge part 6 may be disposed to protrude from the lower surface 3a of the lead 3 to a first protruding distance.
  • the lower surface 4a of the first injection part 4 may be disposed to protrude from the lower surface 3a of the lead 3 to a second protruding distance shorter than the first protruding distance.
  • the purge part 6 protrudes further toward the support part 2 compared to the first spray part 4, so that the purge part 6
  • the partitioning force for partitioning the first region A1 and the second region A2 may be improved.
  • the lower surface 6a of the second injection part 5 may be disposed to protrude from the support part 2 to a third protruding distance shorter than the second protruding distance.
  • the lower surface 6a of the purge part 6 and the lower surface 4a of the first injection part 4 may be disposed to be spaced apart from each other by the same distance from the support part 2.
  • the lower surface 6a of the purge unit 6 and the lower surface 4a of the first injection unit 4 may be disposed to be positioned at the same height as the lower surface 3a of the lid 3.
  • the lower surface 6a of the purge unit 6 and the lower surface 5a of the second injection unit 5 may be disposed at the same height as the lower surface 3a of the lead 3.
  • the rotation part 7 (shown in FIG. 2) rotates the support part 2.
  • the rotation part 7 may rotate the support part 2 around a rotation shaft 20 (shown in FIG. 10) of the support part 2.
  • the rotation part 7 may rotate the support part 2 in a first rotation direction (in the direction of an arrow R1, shown in FIG. 10 ).
  • the first area A1, the third area A3, the second area A2, and the third area A3 may be sequentially disposed along the first rotation direction (direction of arrow R1). .
  • the substrate (S, shown in FIG. 3) supported on the support part 2 rotates around the rotation axis 20 of the support part 2 can do. Accordingly, the substrate S supported by the support part 2 may sequentially move between the first region A1, the third region A3, and the second region A2.
  • the rotating part 7 It can be operated like
  • the rotating part 7 includes a plurality of first substrates 100 located in the first region A1 and a plurality of second substrates in the second region A2.
  • the support part 2 may be rotated so that 200) is located.
  • the rotating part 7 is (2) can be stopped.
  • the first injection unit 4 may inject the first gas into the first area A1. Accordingly, in the first region A1, an adsorption process in which the first gas is adsorbed to the first substrates 100 may be performed. In this case, the second injection unit 5 may wait without injecting the second gas into the second area A2.
  • the rotating part 7 is positioned in the first area A1 as shown in FIG.
  • the support part 2 may be rotated so that the first substrate 100 is positioned in the second area A2.
  • the first substrate 100 may pass through the third area A3 while moving from the first area A1 to the second area A2.
  • the first gas that has not been adsorbed to the first substrates 100 may be removed by the purge gas injected by the purge unit 6.
  • the second substrates 200 may pass through the third area A3 while moving from the second area A2 to the first area A1.
  • the rotation part 7 is 2) can be stopped.
  • the first injection unit 4 may inject the first gas into the first area A1. Accordingly, in the first region A1, an adsorption process in which the first gas is adsorbed to the second substrates 200 may be performed. In this case, the second injection part 5 may inject the second gas into the second area A2. Accordingly, in the second region A2, a deposition process in which a thin film is deposited by reacting the first gas adsorbed on the first substrates 100 and the second gas injected by the second injection unit 5 is performed. Done. Accordingly, a thin film may be deposited on the first substrates 100 by an atomic layer deposition method (ALD).
  • ALD atomic layer deposition method
  • the second area A2 is formed to have a larger size than the first area A1 even if the second gas is injected at a higher flow rate than the first gas.
  • it may be implemented to reduce a gas partial pressure difference between the first region A1 and the second region A2.
  • the substrate processing apparatus 1 according to the present invention suppresses the penetration of the second gas injected into the second region A2 toward the first region A1, and prevents the first region A1 from penetrating into the first region A1. ), it is possible to implement a suppressing force that suppresses penetration of the first gas injected into the second region A2.
  • the substrate processing apparatus 1 can improve the completeness of the deposition process for the first substrates 100 and the adsorption process for the second substrates 200.
  • the adsorption process for the second substrates 200 and the deposition process for the first substrates 100 may be performed in parallel.
  • the rotating part 7 is moved to the first area A1 as shown in FIG.
  • the support part 2 may be rotated so that the first substrates 100 are positioned in) and the second substrates 200 are positioned in the second area A2.
  • the second substrate 200 may pass through the third area A3 while moving from the first area A1 to the second area A2.
  • the first gas that has not been adsorbed to the second substrates 200 may be removed by the purge gas injected by the purge unit 6.
  • the first substrate 100 may pass through the third area A3 while moving from the second area A2 to the first area A1.
  • the second gas that has not been deposited on the first substrates 100 may be removed by the purge gas sprayed by the purge unit 6.
  • the rotating part 7 is 2) can be stopped.
  • the first injection unit 4 may inject the first gas into the first area A1. Accordingly, in the first region A1, an adsorption process in which the first gas is adsorbed to the thin films deposited on the first substrates 100 may be performed. In this case, the second injection part 5 may inject the second gas into the second area A2. Accordingly, in the second region A2, a deposition process in which a thin film is deposited by reacting the first gas adsorbed on the second substrates 200 and the second gas injected by the second injection unit 5 is performed. Done. Accordingly, a thin film may be deposited on the second substrates 200 by an atomic layer deposition method (ALD).
  • ALD atomic layer deposition method
  • the second area A2 is formed to have a larger size than the first area A1 even if the second gas is injected at a higher flow rate than the first gas.
  • it may be implemented to reduce a gas partial pressure difference between the first region A1 and the second region A2.
  • the substrate processing apparatus 1 according to the present invention suppresses the penetration of the first gas injected into the first region A1 toward the second region A2, and prevents the second region A2 from penetrating into the second region A2. ), it is possible to implement a suppressing force that suppresses penetration of the second gas injected into the first region A1.
  • the substrate processing apparatus 1 can improve the completeness of the deposition process for the second substrates 200 and the adsorption process for the first substrates 100.
  • the adsorption process for the first substrates 100 and the deposition process for the second substrates 200 may be performed in parallel.
  • the rotating part 7 is 2) You can repeat the rotation and stop. Until a predetermined number of adsorption processes and deposition processes are performed for each of the first substrates 100 and the second substrates 200, the rotating part 7 rotates and stops with respect to the support part 2 Can be repeated. In this case, the number of times the adsorption process and the deposition process are performed on the first substrates 100 and the number of times the adsorption process and the deposition process are performed on the second substrates 200 may be implemented equally. To this end, in the second area A2, the second injection part 5 injects the second gas onto the second substrates 200 at the end, and in the first area A1, the second injection unit 5 The first injection unit 4 may stand by without injecting the first gas onto the first substrates 100.
  • the substrate processing apparatus 1 since an adsorption process is performed in the first region A1 and a deposition process is performed in the second region A2, the atomic layer deposition method (ALD) It is implemented so that a thin film can be deposited.
  • the first area A1 and the second area A2 are partitioned by the purge gas injected into the third area A3, the film is formed by mixing the first gas and the second gas. This deterioration can be prevented.
  • the substrate processing apparatus 1 according to the present invention can move the substrates 100 and 200 between the first area A1 and the second area A2 through the rotation of the support part 2.
  • the substrate processing apparatus 1 can improve the film quality by improving the stability of the process of depositing a thin film by the atomic layer deposition (ALD) method.
  • ALD atomic layer deposition
  • the rotation part 7 moves the support part 2 around the rotation shaft 20. Therefore, it can always be rotated at the same fixed rotation angle.
  • the rotation part 7 moves the support part 2 around the rotation shaft 20 It can be rotated at a variable rotation angle.
  • the fixed rotation angle may be 180 degrees
  • the variable rotation angle may be 180 degrees different from each other.
  • the variable rotation angle may be 181 degrees, 179 degrees, or the like.
  • the rotating part 7 may rotate and stop the support part 2 in the order of 180 degrees, 179 degrees, 180 degrees, and 181 degrees.
  • the rotating part 7 may rotate and stop the support part 2 in the order of 180 degrees, 181 degrees, 180 degrees, and 179 degrees.
  • the substrate processing apparatus 1 according to the present invention is implemented so that the rotation unit 7 rotates the support unit 2 at the variable rotation angle, so that the support unit 2 rotates at the variable rotation angle.
  • the portions of the substrates 100 and 200 positioned below the first injection holes in the first area A1 and below the second injection holes in the second area A2 can be changed. have.
  • the substrate processing apparatus 1 according to the present invention measures the degree of occurrence of a transfer phenomenon in which the hole pattern due to the positions of the first injection holes and the second injection holes is transferred to the substrate on which the processing process is completed. Since it can be reduced, the uniformity of the treatment process can be improved.
  • the purge unit 6 may include a plurality of purge holes 61 (shown in FIG. 8 ), and a purge body 62 (shown in FIG. 8 ).
  • the purge holes 61 are for injecting the purge gas.
  • the purge holes 61 may be formed in the purge body 62.
  • the purge holes 61 may be disposed to be spaced apart from each other.
  • the purge body 62 may be coupled to the lid 3.
  • the purge body 62 may be disposed to be spaced apart from the third area A3 in the upward direction (direction of arrow UD).
  • the purge body 62 may include a first purge body 621, a second purge body 622, and a third purge body 623.
  • the first purge body 621 is disposed between the second purge body 622 and the third purge body 623.
  • the first purge body 621 may be disposed to correspond to a central area A31 (shown in FIG. 8) of the third area A3.
  • the first purge body 621 may inject the purge gas into the central region A31 through the purge holes 61.
  • the central area A31 is disposed between one area A32 (shown in FIG. 10) of the third area A3 and the other area A33 (shown in FIG. 10) of the third area A3 Can be.
  • the one side area A32 is an area that passes when the substrates 100 and 200 move from the first area A1 to the second area A2.
  • the other side area A33 is an area that passes when the substrates 100 and 200 move from the second area A2 to the first area A1.
  • the second purge body 622 may be disposed to correspond to the one side area A32.
  • the second purge body 622 may inject the purge gas into the one side area A32 through the purge holes 61.
  • a plasma generating device 63 (shown in FIG. 8) may be coupled to the second purge body 622.
  • the plasma generating mechanism 63 generates plasma. Accordingly, in the process of moving the substrates 100 and 200 from the first region A1 to the second region A2, the one side region A32
  • the purge gas injection and plasma treatment of the substrates 100 and 200 may be performed in parallel.
  • the second purge body 622 may activate the purge gas using the plasma and inject the activated purge gas to the one side area A32.
  • the substrates 100 and 200 may be processed using an activated purge gas.
  • the second purge body 622 to which the plasma generating device 63 is coupled may be implemented as a showerhead type shown in FIG. 6 or an electrode structure type shown in FIG. 7.
  • the third purge body 623 may be disposed to correspond to the other side area A33.
  • the third purge body 623 may inject the purge gas into the other side area A33 through the purge holes 61.
  • a window 64 (shown in FIG. 8) may be coupled to the third purge body 623.
  • the temperature measuring unit (not shown) may measure the temperature of the substrates 100 and 200 passing through the other side area A33 through the window 64.
  • the window 64 may be formed of a transparent material or a translucent material. Accordingly, in the process of moving the substrates 100 and 200 from the second area A2 to the first area A1, the other side area A33 is used for the substrates 100 and 200.
  • the purge gas injection and temperature measurement of the substrates 100 and 200 may be performed in parallel.
  • the substrate processing apparatus 1 may include a protrusion 8.
  • the protrusion 8 protrudes from the upper surface 2a of the support 2 in the upward direction (direction of arrow UD).
  • the protrusion 8 may be disposed to correspond to the third area A3. Accordingly, the substrate processing apparatus 1 according to the present invention has a preventive force to prevent mixing of the first gas and the second gas through the gas barrier using the purge gas and the physical barrier using the protrusion 8 Can be further strengthened.
  • the protrusion 8 may protrude upward (in the direction of arrow UD) from the upper surface 2a of the support 2 so that the upper surface is positioned at the same height as the upper surface of the seating member 21.
  • the protrusion 8 may be formed in a rectangular parallelepiped shape as a whole, but is not limited thereto, and if a shape capable of implementing a physical barrier between the first area A1 and the second area A2, the protrusion 8 may be in another shape such as a disk shape. It can also be formed.
  • the protrusion 8 and the support 2 may be integrally formed.
  • the protrusion 8 may be disposed at a position spaced apart from the seating member 21.
  • a first gas groove 81 (shown in FIG. 13) may be formed between.
  • the first gas groove 81 may be implemented in the shape of a valley between the protrusion 8 and the seating members 21. Accordingly, the residual gas containing at least one of the purge gas injected by the purge unit 6 and the first gas injected by the first injection unit 4 flows along the first gas groove 81 It may be exhausted to the outside of the chamber 1a.
  • a second gas groove 82 (shown in FIG. 13) may be formed between the second area A2 and the third area A3.
  • the second gas groove 82 may be implemented in a valley-like shape between the protrusion 8 and the seating members 21. Accordingly, the residual gas containing at least one of the purge gas injected by the purge unit 6 and the second gas injected by the second injection unit 5 flows along the second gas groove 82 It may be exhausted to the outside of the chamber 1a.
  • the substrate processing apparatus 1 according to the present invention is implemented to smoothly exhaust residual gas through the gas grooves 81 and 82.
  • the protrusions 8 and the seating members 21 protrude from the upper surface 2a of the support 2 in the upward direction (in the direction of the arrow UD)
  • the It is implemented so that the residual gas exhausted through the gas grooves 81 and 82 can be prevented from invading toward the substrates 100 and 200.
  • an outer surface of the protrusion 8 and the seating member 21 facing the gas grooves 81 and 82 is a barrier that prevents residual gas from invading toward the substrates 100 and 200 Can function as Accordingly, the substrate processing apparatus 1 according to the present invention can reduce the degree of variation in the processing rate such as deposition rate and etch rate partially on the substrates 100 and 200 due to residual gas. Uniformity can be further improved.

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PCT/KR2020/006526 2019-05-20 2020-05-19 기판처리장치 Ceased WO2020235912A1 (ko)

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JP2021568395A JP7751488B2 (ja) 2019-05-20 2020-05-19 基板処理装置
CN202080032658.4A CN113785086A (zh) 2019-05-20 2020-05-19 用于处理基板的设备
US17/436,651 US20220186373A1 (en) 2019-05-20 2020-05-19 Substrate processing device

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KR1020190058495A KR102901529B1 (ko) 2019-05-20 2019-05-20 기판처리장치
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KR102901529B1 (ko) 2025-12-18
CN113785086A (zh) 2021-12-10
KR20200133406A (ko) 2020-11-30
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JP7751488B2 (ja) 2025-10-08

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