WO2020218748A1 - Chambre de séchage de substrat - Google Patents

Chambre de séchage de substrat Download PDF

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Publication number
WO2020218748A1
WO2020218748A1 PCT/KR2020/004271 KR2020004271W WO2020218748A1 WO 2020218748 A1 WO2020218748 A1 WO 2020218748A1 KR 2020004271 W KR2020004271 W KR 2020004271W WO 2020218748 A1 WO2020218748 A1 WO 2020218748A1
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WIPO (PCT)
Prior art keywords
substrate
supercritical fluid
drying
supply
lower housing
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PCT/KR2020/004271
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English (en)
Korean (ko)
Inventor
신희용
윤병문
Original Assignee
무진전자 주식회사
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Publication of WO2020218748A1 publication Critical patent/WO2020218748A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

Definitions

  • the present invention relates to a substrate drying chamber. More specifically, the present invention increases the substrate throughput by increasing the mixing speed of the supercritical fluid and the organic solvent, and induces the supercritical fluid to maintain a temperature above the critical point to ensure the uniformity of the drying process. When supplying and discharging the supercritical fluid, it induces a symmetrical flow to distribute the supercritical fluid evenly inside the chamber to increase the substrate drying efficiency by supplying and discharging, and particles when the chamber is opened after the drying process is completed. It relates to a substrate drying chamber capable of preventing a problem from flowing into the substrate inside the chamber.
  • the semiconductor device manufacturing process includes various processes such as a lithography process, an etching process, and an ion implantation process, and after each process is completed, the surface of the wafer is removed by removing impurities or residues remaining on the wafer surface before proceeding to the next process.
  • a cleaning process and a drying process are being performed for cleaning.
  • a chemical liquid for cleaning treatment is supplied to the surface of the wafer, and then deionized water (DIW) is supplied to perform a rinse treatment.
  • DIW deionized water
  • a drying treatment of drying the wafer by removing deionized water remaining on the wafer surface is performed.
  • IPA isopropyl alcohol
  • IPA on the wafer is dissolved in the supercritical carbon dioxide (CO 2 ) fluid by supplying carbon dioxide in a supercritical state to a wafer whose surface is moistened with isopropyl alcohol (IPA) in the chamber. And by gradually discharging the supercritical carbon dioxide (CO 2 ) fluid dissolving IPA from the chamber, the wafer can be dried without collapse of the pattern.
  • CO 2 supercritical carbon dioxide
  • FIG. 2 shows a chamber for processing a substrate disclosed in Korean Patent Laid-Open Publication No. 10-2017-0137243, which is a prior art related to a substrate processing apparatus using such a supercritical fluid.
  • IPA may be introduced into a mating surface of the upper body 430 and the lower body 420 constituting the high-pressure chamber 410 in contact with each other.
  • the organic solvent introduced into the bonding surface of the upper body 430 and the lower body 420 becomes particles and accumulates around it.
  • the chamber is opened to transport the processed substrate to the outside. At this time, particles around the bonding surface of the upper body 430 and the lower body 420 are released due to the pressure difference between the inside and the outside of the chamber. It can be introduced into the chamber.
  • a lower supply port 422 for supplying a supercritical fluid for initial pressure, and an exhaust port for exhausting the supercritical fluid after drying Since 426 is not located in the center of the lower body 420, it is difficult to supply and discharge the supercritical fluid by evenly distributing the supercritical fluid inside the chamber by forming an asymmetric flow when supplying and discharging the fluid, thereby reducing drying efficiency. A problem occurs.
  • the mixing speed of the supercritical fluid and IPA supplied in the drying process using the supercritical fluid is one of the important factors affecting the wafer throughput.
  • the technical problem of the present invention is to increase the substrate throughput by increasing the mixing speed of the supercritical fluid and the organic solvent, and induce the supercritical fluid to maintain a temperature above the critical point, thereby securing the uniformity of the drying process. To be able to.
  • the technical problem of the present invention is to provide a supply path of the supercritical fluid for initial pressurization and a discharge path of the supercritical fluid in which the organic solvent formed on the substrate after drying is dissolved through one integrated supply/discharge port, thereby providing a supercritical fluid.
  • a supply path of the supercritical fluid for initial pressurization and a discharge path of the supercritical fluid in which the organic solvent formed on the substrate after drying is dissolved through one integrated supply/discharge port, thereby providing a supercritical fluid.
  • the technical problem of the present invention is to block re-inflow particles when the chamber is opened after the drying process is completed by using a substrate placement plate that is required for arranging a substrate, and initial pressure directed directly to the substrate surface at the beginning of the drying process. It prevents the collapse of the pattern formed on the substrate by preventing the flow of the supercritical fluid for use, and prevents the problem that particles that may be contained in the supercritical fluid for initial pressurization are deposited on the substrate or reduces the amount of deposition, and The drying process time is shortened by reducing the working volume of the chamber due to the volume.
  • the technical problem of the present invention is to arrange the substrate on the substrate placement plate so as to be positioned higher than the bonding surface between the lower housing and the upper housing, so that when the drying process is completed and the chamber is opened, it is provided on the bonding surface between the lower housing and the upper housing. Particles around the sealed part are prevented from flowing into the substrate by gravity due to the height difference between the substrate and the bonding surface.
  • an upper housing, a lower housing coupled to the upper housing so as to be opened and closed, and a substrate coupled to the bottom surface of the lower housing and formed with an organic solvent are disposed.
  • an integrated supply/discharge port and the integrated supply/discharge path for providing a discharge path of the mixed fluid in which the organic solvent is dissolved in the supercritical fluid including the initial pressurization supercritical fluid and the drying supercritical fluid
  • a stirrer for stirring the initial pressure supercritical fluid supplied through the discharge port and the drying supercritical fluid supplied through the upper supply port.
  • the stirrer increases the mixing speed of the organic solvent and the initial pressure supercritical fluid and the mixing speed of the organic solvent and the drying supercritical fluid.
  • the stirrer includes a shaft inserted into the chamber through an insertion hole formed in a central region of the upper housing, and a stirring blade portion coupled to one end located inside the chamber among both ends of the shaft. And a driving unit coupled to the other end located outside the chamber of both ends of the shaft to provide rotational driving force to the shaft.
  • the substrate drying chamber according to the present invention further includes a shaft coupling member coupled to an outer surface of the upper housing to axially couple a shaft constituting the stirrer, wherein the shaft coupling member is spaced apart from the center point of the shaft coupling member.
  • a plurality of through holes are formed, and the upper supply port comprises a plurality of supply holes formed in the upper housing so as to be aligned with a plurality of through holes formed in the shaft coupling member.
  • a plurality of through holes formed in the shaft coupling member are arranged symmetrically to each other.
  • the integrated supply/discharge port is formed to extend from one side to the other side of the lower housing and is formed to face the substrate arrangement plate in an intermediate region between the one side and the other side. It is characterized by being.
  • the integrated supply/discharge port includes a first conduit part formed from one side of the lower housing to the middle region, and the substrate is disposed in communication with the first conduit part in the intermediate region. And a second conduit portion formed to face the plate and communicated with the common port portion and the first conduit in the intermediate region to the other side of the lower housing.
  • the first pipe part and the common port part provide a supply path of the supercritical fluid for initial pressure
  • the common port part and the second pipe part It is characterized in that it provides a discharge path of the critical fluid
  • the substrate drying chamber according to the present invention further includes a sealing portion provided on a bonding surface between the lower housing and the upper housing, and the substrate is positioned higher than the bonding surface between the lower housing and the upper housing. And when the drying process is completed and the lower housing and the upper housing are opened, particles around the sealing portion provided on the bonding surface are transferred to the substrate by gravity according to the height difference between the substrate and the bonding surface. It is characterized in that the inflow of is prevented.
  • the supercritical fluid for initial pressure supplied through the first conduit portion and the common port portion is blocked by the substrate arrangement plate so that direct injection to the substrate is prevented.
  • one end is coupled to the bottom surface of the lower housing and the other end is coupled to the substrate placement plate, thereby supporting the substrate placement plate while separating the substrate placement plate from the bottom surface of the lower housing. It characterized in that it further comprises a substrate arrangement plate support.
  • the first spaced space existing between the bottom surface of the lower housing and the substrate placement plate by the substrate placement plate support part is for initial pressure supplied through the integrated supply/discharge port. It is characterized in that the supercritical fluid moves along the lower surface of the substrate arrangement plate to gradually diffuse into the processing area in which the substrate is disposed.
  • the substrate drying chamber according to the present invention further includes a substrate support portion having one end coupled to the upper surface of the substrate arrangement plate and the other end coupled to the substrate, supporting the substrate and separating the substrate from the upper surface of the substrate arrangement plate Characterized in that.
  • the second separation space existing between the upper surface of the substrate arrangement plate and the substrate by the substrate support portion is an initial pressurization supplied to the lower surface of the substrate through the integrated supply/discharge port. It is characterized in that the drying process is shortened by exposure to the supercritical fluid for drying and the supercritical fluid for drying supplied through the upper supply port.
  • the present invention it is possible to increase the substrate throughput by increasing the mixing speed of the supercritical fluid and the organic solvent, and induce the supercritical fluid to maintain a temperature above the critical point, thereby securing the uniformity of the drying process. have.
  • the supply path of the supercritical fluid for initial pressurization and the discharge path of the supercritical fluid in which the organic solvent formed on the substrate after drying is dissolved is symmetrical when supplying and discharging the supercritical fluid.
  • the supercritical fluid is uniformly distributed and supplied and discharged in the chamber by inducing a natural flow, thereby increasing substrate drying efficiency.
  • a substrate placement plate that is required for arranging the substrate, it blocks re-inflow particles when the chamber is opened after the drying process is completed, and the initial pressure supercritical fluid flows directly to the substrate surface at the beginning of the drying process. It is possible to prevent the collapse of the pattern formed on the substrate, prevent the problem that particles that may be contained in the initial pressurization supercritical fluid are deposited on the substrate, or reduce the amount of deposition, and reduce the amount of deposition. Due to the reduced working volume of the chamber there is an effect of shortening the drying process time.
  • FIG. 1 is a diagram showing a pattern collapse phenomenon occurring in a substrate drying process according to the prior art
  • FIG. 2 is a view showing a conventional substrate drying chamber
  • FIG. 3 is a view showing a substrate drying chamber according to an embodiment of the present invention.
  • FIG. 4 is a view showing an exemplary top surface shape in which a shaft constituting a stirrer is coupled to a shaft coupling member in an embodiment of the present invention
  • FIG. 5 is a view showing a diffusion path of the initial pressurization supercritical fluid in an embodiment of the present invention
  • FIG. 6 is a diagram showing a diffusion path of a drying supercritical fluid in an embodiment of the present invention
  • FIG. 7 is a view showing a discharge path of a mixed fluid in which an organic solvent is dissolved in a supercritical fluid including an initial pressurizing supercritical fluid and a drying supercritical fluid in an embodiment of the present invention
  • FIG. 8 is a diagram illustrating a sealing portion provided on a bonding surface between the upper housing and the lower housing and a substrate of particles existing therearound when the drying process is completed and the lower housing and the upper housing are opened, according to an embodiment of the present invention. It is a diagram for explaining the principle of preventing the inflow of.
  • first or second may be used to describe various elements, but the elements should not be limited by the terms. The terms are only for the purpose of distinguishing one component from other components, for example, without departing from the scope of the rights according to the concept of the present invention, the first component may be named as the second component and similarly the second component. The component may also be referred to as a first component.
  • FIG. 3 is a view showing a substrate drying chamber according to an embodiment of the present invention
  • FIG. 4 is an exemplary top shape in which a shaft constituting a stirrer is coupled to a shaft coupling member in an embodiment of the present invention
  • 5 is a view showing the diffusion path of the initial pressurization supercritical fluid in an embodiment of the present invention
  • FIG. 6 is a view showing the diffusion of the drying supercritical fluid in an embodiment of the present invention.
  • FIG. 7 is a diagram showing a path
  • FIG. 7 is a view showing a discharge path of a mixed fluid in which an organic solvent is dissolved in a supercritical fluid including a supercritical fluid for initial pressurization and a supercritical fluid for drying in an embodiment of the present invention 8 is, in one embodiment of the present invention, when the drying process is completed and the lower housing and the upper housing are opened, the sealing portion provided on the bonding surface of the upper housing and the lower housing and particles existing therearound It is a diagram for explaining the principle of preventing inflow to the substrate.
  • a substrate drying chamber 1 includes an upper housing 10, a lower housing 20, a sealing unit 30, a substrate placement plate 40, and an integral type.
  • a supply/discharge port 50, an upper supply port 60, a substrate mounting plate support portion 70, a substrate support portion 80, a housing driving portion 90, a stirrer 100, and a shaft coupling member 200 are included.
  • the upper housing 10 and the lower housing 20 are coupled to each other so as to be able to open and close, and provide a space in which a drying process is performed.
  • the upper housing 10 and the lower housing 20 may be configured to have a cylindrical shape, but are not limited thereto.
  • an upper supply port 60 is formed in the upper housing 10
  • an integrated supply/discharge port 50 is formed in the lower housing 20. The specific configuration of the upper supply port 60 will be described in detail later in connection with the configuration of the stirrer 100 and the shaft coupling member 200.
  • the sealing part 30 is provided on the coupling surface (C) of the lower housing 20 and the upper housing 10, and maintains the airtightness of the coupling surface (C) between the lower housing 20 and the upper housing 10. Block the inner area of the chamber from the outside.
  • the sealing part 30 provided on the coupling surface C of the upper housing 10 and the lower housing 20
  • the substrate W is a bonding surface of the lower housing 20 and the upper housing 10
  • the sealing part provided on the bonding surface (C) (30)
  • the surrounding particles may be configured to be prevented from entering the substrate W by gravity according to a height difference between the substrate W and the bonding surface C.
  • the substrate arranging plate 40 is a component on which a substrate W on which an organic solvent is formed is attached to the bottom surface 22 of the lower housing 20.
  • the initial pressure supercritical fluid supplied through the first conduit portion 510 and the common port portion 520 constituting the integrated supply/discharge port 50 is blocked by the substrate mounting plate 40 and thus the substrate ( It can be configured to prevent direct injection to W).
  • Figure 5 shows the diffusion path of the initial pressurization supercritical fluid, and the diagram showing the discharge path of the mixed fluid in which an organic solvent is dissolved in the supercritical fluid including the initial pressurization supercritical fluid and the drying supercritical fluid.
  • the substrate placement plate 40 required to arrange the substrate W, which is the target of the drying process, after the drying process is completed, when the chamber is opened, re-inflow particles are blocked, and the drying process It is possible to prevent the collapse of the pattern formed on the substrate (W) by preventing the flow of the initial pressure supercritical fluid directly to the surface of the substrate (W), and particles that may be contained in the initial pressure supercritical fluid are contained on the substrate. It is possible to prevent the problem of depositing on the (W) or to reduce the amount of deposition, and to reduce the working volume of the chamber due to the volume occupied by the substrate arrangement plate 40 to shorten the drying process time.
  • the integrated supply/discharge port 50 is formed extending from one side 24 to the other side 26 of the lower housing 20, and the substrate is arranged in the intermediate region 28 between one side 24 and the other side 26. Discharge of the mixed fluid dissolved in the initial pressure supercritical fluid and the drying supercritical fluid formed on the substrate (W) after drying and the supply path of the supercritical fluid for initial pressure, formed to face the plate 40 It is a component that provides a path.
  • the supply path of the supercritical fluid for initial pressurization and the organic solvent formed on the substrate W after drying are dissolved in the supercritical fluid for initial pressurization and the supercritical fluid for drying through one such integrated supply/discharge port 50
  • By providing a discharge path of the fluid there is an effect of increasing the substrate drying efficiency by inducing a symmetrical flow when supplying and discharging the supercritical fluid and supplying and discharging the supercritical fluid evenly in the chamber.
  • such an integrated supply/discharge port 50 has a first conduit portion 510 formed from one side 24 of the lower housing 20 to the middle region 28, and the first conduit portion 510 in the middle region 28.
  • the lower housing is in communication with the conduit part 510 and is in communication with the common port part 520 and the first conduit part 510 in the common port part 520 and the intermediate region 28 formed to face the substrate mounting plate 40.
  • It includes a second conduit part 530 formed up to the other side 26 of 20, and the first conduit part 510 and the common port part 520 provide a supply path of the supercritical fluid for initial pressurization,
  • the common port part 520 and the second conduit part 530 may be configured to provide a discharge path for the supercritical fluid in which the organic solvent is dissolved.
  • the upper supply port 60 is a component formed to face the substrate mounting plate 40 in the central region of the upper housing 10 to provide a supply path of the supercritical fluid for drying.
  • the initial pressure supercritical fluid is supplied during the set initial pressure time through the first conduit portion 510 and the common port portion 520 constituting the integrated supply/discharge port 50, and 2) After the initial pressurization time has elapsed, the supply of the initial pressurization supercritical fluid is cut off, and the drying supercritical fluid is supplied through the upper supply port 60 for the drying time, and 3) the drying supercritical fluid is after the drying time.
  • the supply of the fluid is blocked and the mixed fluid may be discharged during the discharge time through the common port part 520 and the second conduit part 530 constituting the integrated supply/discharge port 50.
  • the supply of the supercritical fluid for drying and the discharge of the mixed fluid may be repeated a set number of times, that is, flushed.
  • the agitator 100 is a component that agitates the initial pressure supercritical fluid supplied through the integrated supply/discharge port and the drying supercritical fluid supplied through the upper supply port in the chamber. It can be configured to increase the mixing speed of the critical fluid and the mixing speed of the organic solvent and the drying supercritical fluid. According to this configuration, it is possible to increase the substrate throughput, which is a performance indicator of the supercritical drying process, and induce the supercritical fluid to maintain a temperature above the critical point, thereby ensuring uniformity in the drying process.
  • the stirrer 100 may include a shaft 110, a stirring blade 120, and a driving part 130.
  • the shaft 110 is a component inserted into the chamber through an insertion hole formed in the central region of the upper housing, and performs a function of rotating by a rotational driving force provided by the driving unit 130.
  • the stirring blade unit 120 is a component coupled to one end located inside the chamber among both ends of the shaft 110, and performs a function of agitating the supercritical fluid by rotating inside the chamber according to the rotation of the shaft 110. .
  • the driving unit 130 is a component that is coupled to the other end located outside the chamber of both ends of the shaft 110 to provide rotational driving force to the shaft 110.
  • the shaft coupling member 200 is a component that is coupled to the outer surface of the upper housing to axially couple the shaft 110 constituting the stirrer 100.
  • a plurality of through holes 210, 220, 230, 240 spaced apart from the center point of the shaft coupling member 200 are formed symmetrically. It may be configured, and the upper supply port may be formed of a plurality of supply holes formed in the upper housing so as to be aligned in the vertical direction with a plurality of through holes formed in the shaft coupling member 200.
  • a hole arranged in the vertical direction is formed in the insertion hole formed in the upper housing, and the hole formed in the central region of the shaft coupling member 200 constituting the stirrer 100 It can be inserted into the chamber through the insertion hole formed in the upper housing, the shaft coupling member 200 through which the shaft 110 passes may be provided with a bearing (bearing) means.
  • the substrate placement plate support part 70 has one end coupled to the bottom surface 22 of the lower housing 20 and the other end coupled to the substrate placement plate 40, and supports the substrate placement plate 40 while supporting the substrate placement plate ( It is a component that separates 40) from the bottom surface 22 of the lower housing 20.
  • the first spaced space R1 existing between the bottom surface 22 of the lower housing 20 and the substrate placement plate 40 by the substrate placement plate support part 70 is an integral supply/discharge port 50
  • the supercritical fluid for initial pressure supplied through may move along the lower surface of the substrate placement plate 40 to gradually diffuse into the processing area where the substrate W is disposed.
  • the substrate support 80 has one end coupled to the upper surface of the substrate placement plate 40 and the other end coupled to the substrate W. While supporting the substrate W, the substrate W is attached to the upper surface of the substrate placement plate 40. It is a component that separates from
  • the second separation space R2 existing between the upper surface of the substrate mounting plate 40 and the substrate W by the substrate support 80 provides the lower surface of the substrate W as the integrated supply/discharge port ( It performs a function of shortening the drying process time by exposure to the initial pressure supercritical fluid supplied through 50) and the drying supercritical fluid supplied through the upper supply port 60.
  • the housing driving unit 90 is a means for opening and closing the housing, and after the drying process is completed, the lower housing 20 is driven to separate the lower housing 20 from the upper housing 10 to open the chamber or initiate the drying process. In this case, the lower housing 20 may be driven to couple the lower housing 20 to the upper housing 10 to close the chamber.
  • the housing driving unit 90 is expressed as driving the lower housing 20, but this is only an example, and the housing driving unit 90 may be configured to drive the upper housing 10.
  • the supercritical fluid for initial pressurization and the supercritical fluid for drying may include carbon dioxide (CO 2 ), and the organic solvent may include alcohol, but is not limited thereto.
  • the alcohol may include methanol, ethanol, 1-propanol, 2-propanol, IPA, and 1-butanol. It is not limited.
  • carbon dioxide in a supercritical state is applied to the substrate W whose surface is moistened with an organic solvent such as alcohol in the chamber.
  • an organic solvent such as alcohol in the chamber.
  • the alcohol on the substrate W is dissolved in the supercritical carbon dioxide fluid.
  • the substrate W can be dried without collapse of the pattern.
  • the substrate throughput is increased by increasing the mixing speed of the supercritical fluid and the organic solvent, and the supercritical fluid is induced to maintain a temperature above the critical point, thereby uniformity of the drying process ( uniformity) can be secured.
  • the supply path of the supercritical fluid for initial pressurization and the discharge path of the supercritical fluid in which the organic solvent formed on the substrate after drying is dissolved is symmetrical when supplying and discharging the supercritical fluid.
  • the supercritical fluid is uniformly distributed and supplied and discharged in the chamber by inducing a natural flow, thereby increasing substrate drying efficiency.
  • a substrate placement plate that is required for arranging the substrate, it blocks re-inflow particles when the chamber is opened after the drying process is completed, and the initial pressure supercritical fluid flows directly to the substrate surface at the beginning of the drying process. It is possible to prevent the collapse of the pattern formed on the substrate, prevent the problem that particles that may be contained in the initial pressurization supercritical fluid are deposited on the substrate, or reduce the amount of deposition, and reduce the amount of deposition. Due to the reduced working volume of the chamber there is an effect of shortening the drying process time.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Solid Materials (AREA)

Abstract

Une chambre de séchage de substrat selon la présente invention comprend : un boîtier supérieur ; un boîtier inférieur, accouplé au boîtier supérieur afin de pouvoir être ouvert ou fermé ; une plaque d'agencement de substrat, accouplée à la surface inférieure du boîtier inférieur et sur laquelle est disposé un substrat sur lequel est formé un solvant organique ; un orifice supérieur d'alimentation, formé sur le boîtier supérieur de façon à faire face à la plaque d'agencement de substrat afin de fournir une voie d'alimentation en fluide supercritique destinée au séchage ; un orifice intégré d'alimentation/évacuation, qui fournit une voie d'alimentation en fluide supercritique, pour une pressurisation initiale, et une voie d'évacuation du fluide mélangé, dans laquelle le solvant organique est dissous dans le fluide supercritique, contenant le fluide supercritique destiné à la pressurisation initiale et le fluide supercritique destiné au séchage après séchage, selon l'alimentation du fluide supercritique destiné au séchage ; et un agitateur, permettant d'agiter le fluide supercritique, pour une pressurisation initiale fournie à travers l'orifice intégré d'alimentation/évacuation, et le fluide supercritique, destiné au séchage fourni à travers l'orifice supérieur d'alimentation.
PCT/KR2020/004271 2019-04-24 2020-03-27 Chambre de séchage de substrat WO2020218748A1 (fr)

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KR102179716B1 (ko) 2020-11-17

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