WO2020209536A1 - Chambre de séchage de substrat - Google Patents

Chambre de séchage de substrat Download PDF

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Publication number
WO2020209536A1
WO2020209536A1 PCT/KR2020/004268 KR2020004268W WO2020209536A1 WO 2020209536 A1 WO2020209536 A1 WO 2020209536A1 KR 2020004268 W KR2020004268 W KR 2020004268W WO 2020209536 A1 WO2020209536 A1 WO 2020209536A1
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WO
WIPO (PCT)
Prior art keywords
substrate
lower housing
coupled
supercritical
height adjustment
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Application number
PCT/KR2020/004268
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English (en)
Korean (ko)
Inventor
신용식
Original Assignee
무진전자 주식회사
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Publication date
Application filed by 무진전자 주식회사 filed Critical 무진전자 주식회사
Publication of WO2020209536A1 publication Critical patent/WO2020209536A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches

Definitions

  • the present invention relates to a substrate drying chamber. More specifically, the present invention minimizes the working volume of the chamber by reducing the distance between the substrate and the substrate placement plate during the supercritical drying process, and when the supercritical drying process is initiated or the supercritical drying process is completed, By increasing the separation distance of the substrate placement plate, a wafer transfer robot is inserted into the space between the substrate and the substrate placement plate so that the substrate can be stably carried in and out, and is symmetrical when supplying and discharging the supercritical fluid. It is possible to increase the substrate drying efficiency by inducing the flow and supplying and discharging the supercritical fluid evenly inside the chamber, and prevents the problem of particles entering the substrate inside the chamber when the chamber is opened after the supercritical drying process is completed. It relates to a substrate drying chamber.
  • the semiconductor device manufacturing process includes various processes such as a lithography process, an etching process, and an ion implantation process, and after each process is completed, the surface of the wafer is removed by removing impurities or residues remaining on the wafer surface before proceeding to the next process.
  • a cleaning process and a supercritical drying process are being carried out for cleaning.
  • a chemical liquid for cleaning treatment is supplied to the surface of the wafer, and then deionized water (DIW) is supplied to perform a rinse treatment.
  • DIW deionized water
  • a drying treatment of drying the wafer by removing deionized water remaining on the wafer surface is performed.
  • IPA isopropyl alcohol
  • IPA on the wafer is dissolved in the supercritical carbon dioxide (CO 2 ) fluid by supplying carbon dioxide in a supercritical state to a wafer whose surface is moistened with isopropyl alcohol (IPA) in the chamber. And by gradually discharging the supercritical carbon dioxide (CO 2 ) fluid dissolving IPA from the chamber, the wafer can be dried without collapse of the pattern.
  • CO 2 supercritical carbon dioxide
  • FIG. 2 shows a chamber for processing a substrate disclosed in Korean Patent Laid-Open Publication No. 10-2017-0137243, which is a prior art related to a substrate processing apparatus using such a supercritical fluid.
  • the organic solvent may flow into the bonding surface of the upper body 430 and the lower body 420 constituting the high-pressure chamber 410 in contact with each other. .
  • the organic solvent introduced into the bonding surface of the upper body 430 and the lower body 420 becomes particles and accumulates around it.
  • the chamber is opened to transport the processed substrate to the outside, and at this time, particles around the bonding surface of the upper body 430 and the lower body 420 due to the pressure difference between the inside and the outside of the chamber It can be introduced into this chamber.
  • a lower supply port 422 for supplying a supercritical fluid for initial pressure, and an exhaust port for exhausting the supercritical fluid after drying Since 426 is not located in the center of the lower body 420, it is difficult to supply and discharge the supercritical fluid by evenly distributing the supercritical fluid inside the chamber by forming an asymmetric flow when supplying and discharging the fluid, thereby reducing drying efficiency. A problem occurs.
  • a space corresponding to the volume of the robot hand constituting the substrate transfer robot that is, the volume occupied by the robot hand and the robot hand control, are provided under the substrate in the chamber.
  • the space including the free space margin is required.
  • This space occupies about 30% or more of the working volume of the chamber.
  • the internal volume of the chamber has a close relationship with the throughput, and as the internal volume increases, the processing time is lengthened and the throughput is reduced.
  • the technical task of the present invention is to minimize the working volume of the chamber by reducing the distance between the substrate and the substrate placement plate during the supercritical drying process, and when the supercritical drying process is initiated or the supercritical drying process is completed, the substrate and the substrate By increasing the separation distance of the placement plate, a wafer transfer robot is inserted into the space between the substrate and the substrate placement plate so that the substrate can be stably carried in and out.
  • the technical problem of the present invention is to provide a supply path of the supercritical fluid for initial pressurization and a discharge path of the supercritical fluid in which the organic solvent formed on the substrate after drying is dissolved through one integrated supply/discharge port, thereby providing a supercritical fluid.
  • a supply path of the supercritical fluid for initial pressurization and a discharge path of the supercritical fluid in which the organic solvent formed on the substrate after drying is dissolved through one integrated supply/discharge port, thereby providing a supercritical fluid.
  • the technical problem of the present invention is to block re-inflow particles when the chamber is opened after the completion of the supercritical drying process by using a substrate placement plate that is required for arranging the substrate, and to the substrate surface at the beginning of the supercritical drying process. Prevents the collapse of the pattern formed on the substrate by preventing the flow of the supercritical fluid for initial pressure directed directly, and prevents the problem that particles that may be contained in the supercritical fluid for initial pressure are deposited on the substrate or reduces the amount of deposition, The supercritical drying process time is shortened by reducing the working volume of the chamber due to the volume occupied by the substrate arrangement plate.
  • the technical problem of the present invention is to place the substrate on the substrate placement plate so as to be positioned higher than the bonding surface between the lower housing and the upper housing, so that when the supercritical drying process is completed and the chamber is opened, the bonding surface of the lower housing and the upper housing This is to prevent a problem in which particles around the sealing portion provided in the substrate are introduced into the substrate due to gravity due to a height difference between the substrate and the bonding surface.
  • an upper housing, a lower housing coupled to the upper housing so as to be opened and closed, and a substrate coupled to the bottom surface of the lower housing and formed with an organic solvent are disposed
  • the height is adjusted
  • the substrate support unit coupled to the unit moves upward by the elastic force provided by the height adjustment unit, so that the separation space existing between the upper surface of the substrate arrangement plate and the substrate is enlarged, and the separation space in which the robot hand of the substrate transfer robot is enlarged.
  • the substrate is inserted into or out of the substrate.
  • the height adjustment unit includes a support pin accommodated in a receiving groove formed on the substrate arrangement plate and coupled to the substrate support, a protrusion formed in an intermediate region of the support pin, and one end of the support pin And a compression spring coupled to the support pin so that the other end is in contact with the bottom surface of the receiving groove.
  • the protrusion constituting the height adjustment unit is provided with the compression spring. It is characterized in that the height adjustment portion is prevented from being separated from the receiving groove by moving upward by the elastic force provided and being ligated to the fixing plate formed on the upper end of the receiving groove formed in the substrate arrangement plate.
  • the substrate and the substrate arrangement plate have a circular shape
  • the receiving groove is formed in a symmetrical shape along an edge of the substrate arrangement plate at least three
  • the height adjustment part is the symmetrical type. It is characterized in that it is coupled to the substrate arrangement plate in a state accommodated in each of the three or more receiving grooves.
  • the substrate drying chamber according to the present invention includes an upper supply port formed to face the substrate arrangement plate in a central region of the upper housing to provide a supply path of a supercritical fluid for drying, and a supply path of the supercritical fluid for initial pressurization, and It characterized in that it further comprises an integrated supply/discharge port for providing a discharge path of the mixed fluid in which the organic solvent is dissolved in the drying supercritical fluid after drying according to the supply of the drying supercritical fluid.
  • the integrated supply/discharge port is formed to extend from one side to the other side of the lower housing and is formed to face the substrate arrangement plate in an intermediate region between the one side and the other side. It is characterized by being.
  • the integrated supply/discharge port includes a first conduit part formed from one side of the lower housing to the middle region, and the substrate is disposed in communication with the first conduit part in the intermediate region. And a second conduit portion formed to face the plate and communicated with the common port portion and the first conduit in the intermediate region to the other side of the lower housing.
  • the first pipe portion and the common port portion provide a supply path of the supercritical fluid for initial pressurization, and the common port portion and the second pipe portion are mixed with the organic solvent dissolved therein. It is characterized in that it provides a discharge path of the fluid.
  • the substrate drying chamber according to the present invention further includes a sealing portion provided on a bonding surface between the lower housing and the upper housing, and the substrate is positioned higher than the bonding surface between the lower housing and the upper housing. Disposed, and when the supercritical drying process is completed and the lower housing and the upper housing are separated, particles around the sealing part provided on the bonding surface are caused by gravity due to the difference in height between the substrate and the bonding surface. It is characterized in that inflow to the substrate is prevented.
  • the supercritical fluid for initial pressure supplied through the first conduit portion and the common port portion is blocked by the substrate arrangement plate so that direct injection to the substrate is prevented.
  • one end is coupled to the bottom surface of the lower housing and the other end is coupled to the substrate placement plate, thereby supporting the substrate placement plate while separating the substrate placement plate from the bottom surface of the lower housing. It characterized in that it further comprises a substrate arrangement plate support.
  • the spaced space existing between the bottom surface of the lower housing and the substrate placement plate by the substrate placement plate support part is a supercritical for initial pressure supplied through the integrated supply/discharge port. It is characterized in that the fluid moves along the lower surface of the substrate arrangement plate to gradually diffuse into the processing area in which the substrate is disposed.
  • the separation distance between the substrate and the substrate placement plate is reduced to minimize the working volume of the chamber, and when the supercritical drying process is started or the supercritical drying process is completed, the substrate and the substrate are placed.
  • a wafer transfer robot is inserted into the space between the substrate and the substrate placement plate, so that the substrate can be stably carried in and out.
  • the supply path of the supercritical fluid for initial pressurization and the discharge path of the supercritical fluid in which the organic solvent formed on the substrate after drying is dissolved is symmetrical when supplying and discharging the supercritical fluid.
  • the supercritical fluid is uniformly distributed and supplied and discharged in the chamber by inducing a natural flow, thereby increasing substrate drying efficiency.
  • a substrate placement plate that is required for arranging the substrate, it blocks re-inflow particles when the chamber is opened after completion of the supercritical drying process, and is used for initial pressurization directly directed to the substrate surface at the beginning of the supercritical drying process.
  • the sealing portion provided on the bonding surface of the lower housing and the upper housing.
  • FIG. 1 is a diagram showing a pattern collapse phenomenon occurring in a substrate drying process according to the prior art
  • FIG. 2 is a view showing a conventional substrate drying chamber
  • FIG. 3 is a view showing a substrate drying chamber according to an embodiment of the present invention, a view showing a state in which the chamber is closed,
  • FIG. 4 is a view showing a substrate drying chamber according to an embodiment of the present invention, a view showing a state in which the chamber is open,
  • FIG. 5 is a view showing a diffusion path of the initial pressurization supercritical fluid in an embodiment of the present invention
  • FIG. 6 is a diagram showing a diffusion path of a drying supercritical fluid in an embodiment of the present invention
  • FIG. 7 is a diagram showing a discharge path of a mixed fluid in which an organic solvent is dissolved in an embodiment of the present invention
  • FIGS. 8 to 11 are diagrams illustrating a process in which a substrate is unloaded by a substrate transfer robot in a state in which the lower housing and the upper housing are separated by the completion of the supercritical drying process and the chamber is opened according to an embodiment of the present invention.
  • first or second may be used to describe various elements, but the elements should not be limited by the terms. The terms are only for the purpose of distinguishing one component from other components, for example, without departing from the scope of the rights according to the concept of the present invention, the first component may be named as the second component and similarly the second component. The component may also be referred to as a first component.
  • FIG. 3 is a view showing a substrate drying chamber according to an embodiment of the present invention, a view showing a closed state of the chamber
  • Figure 4 is a view showing the substrate drying chamber according to an embodiment of the present invention
  • the chamber is It is a view showing an open state
  • FIG. 5 is a view showing a diffusion path of the initial pressurization supercritical fluid in an embodiment of the present invention
  • FIG. 6 is a drying supercritical fluid in an embodiment of the present invention.
  • FIG. 7 is a diagram showing a discharge path of a mixed fluid in which an organic solvent is dissolved in an embodiment of the present invention
  • FIGS. 8 to 11 are , A diagram showing a process in which a substrate is unloaded by a substrate transfer robot in a state in which the lower housing and the upper housing are separated by the completion of the supercritical drying process to open the chamber.
  • a substrate drying chamber 1 includes an upper housing 10, a lower housing 20, a sealing unit 30, a substrate mounting plate 40, and an integral type.
  • a supply/discharge port 50, an upper supply port 60, a substrate arrangement plate support portion 70, a substrate support portion 80, a housing driving portion 90, and a height adjustment portion 100 are included.
  • the upper housing 10 and the lower housing 20 are coupled to be openable and closed to each other, and provide a space in which a supercritical drying process is performed.
  • the upper housing 10 and the lower housing 20 may be configured to have a cylindrical shape, but are not limited thereto.
  • an upper supply port 60 is formed in the upper housing 10
  • an integrated supply/discharge port 50 is formed in the lower housing 20.
  • the sealing part 30 is provided on the coupling surface (C) of the lower housing 20 and the upper housing 10, and maintains the airtightness of the coupling surface (C) between the lower housing 20 and the upper housing 10. Block the inner area of the chamber from the outside.
  • the coupling surface of the upper housing 10 and the lower housing 20 Inflow of the sealing part 30 provided in C
  • the particles existing therearound into the substrate W is prevented.
  • the substrate W is disposed on the substrate mounting plate 40 so as to be positioned higher than the bonding surface C of the lower housing 20 and the upper housing 10, and the supercritical drying process is completed and the lower housing 20
  • particles around the sealing part 30 provided on the bonding surface C are caused by gravity according to the height difference between the substrate W and the bonding surface C. It may be configured to prevent inflow into it.
  • the substrate placement plate 40 is a component on which the substrate W is bonded to the bottom surface 22 of the lower housing 20 and on which the organic solvent is formed.
  • a receiving groove (AG) is formed.
  • the receiving groove (AG) formed in the substrate arrangement plate 40 is coupled by receiving the height adjustment unit 100, which will be described in detail later.
  • the substrate W and the substrate arrangement plate 40 may have a circular shape, and three or more receiving grooves AG may be formed in a symmetrical shape along the edge of the substrate arrangement plate 40.
  • a fixing plate 404 for fixing the height adjustment unit 100 may be formed at the upper end of the receiving groove AG.
  • the initial pressure supercritical fluid supplied through the first conduit portion 510 and the common port portion 520 constituting the integrated supply/discharge port 50 is blocked by the substrate mounting plate 40 and thus the substrate ( It can be configured to prevent direct injection to W).
  • the substrate W as the target of the supercritical drying process is disposed.
  • the substrate placement plate 40 required for By preventing the flow of the supercritical fluid, it is possible to prevent the collapse of the pattern formed on the substrate (W), and prevent the problem that particles that may be contained in the supercritical fluid for initial pressure are deposited on the substrate (W) or reduce the amount of deposition. This can be reduced, and the working volume of the chamber due to the volume occupied by the substrate placement plate 40 can be reduced, thereby shortening the supercritical drying process time.
  • the integrated supply/discharge port 50 is formed extending from one side 24 to the other side 26 of the lower housing 20, and the substrate is arranged in the intermediate region 28 between one side 24 and the other side 26. It is formed to face the plate 40, and provides a supply path of the supercritical fluid for initial pressurization and a discharge path of the supercritical fluid in which the organic solvent formed on the substrate W after drying is dissolved.
  • the supercritical fluid is When supplying and discharging, a symmetrical flow is induced and the supercritical fluid is uniformly distributed in the chamber to supply and discharge, thereby increasing substrate drying efficiency.
  • such an integrated supply/discharge port 50 has a first conduit portion 510 formed from one side 24 of the lower housing 20 to the middle region 28, and the first conduit portion 510 in the middle region 28.
  • the lower housing is in communication with the conduit part 510 and is in communication with the common port part 520 and the first conduit part 510 in the common port part 520 and the intermediate region 28 formed to face the substrate mounting plate 40.
  • It includes a second conduit part 530 formed up to the other side 26 of 20, and the first conduit part 510 and the common port part 520 provide a supply path of the supercritical fluid for initial pressurization,
  • the common port part 520 and the second conduit part 530 may be configured to provide a discharge path for the supercritical fluid in which the organic solvent is dissolved.
  • the upper supply port 60 is a component formed to face the substrate mounting plate 40 in the central region of the upper housing 10 to provide a supply path of the supercritical fluid for drying.
  • the substrate placement plate support part 70 has one end coupled to the bottom surface 22 of the lower housing 20 and the other end coupled to the substrate placement plate 40, and supports the substrate placement plate 40 while supporting the substrate placement plate ( It is a component that separates 40) from the bottom surface 22 of the lower housing 20.
  • the separation space R1 existing between the bottom surface 22 of the lower housing 20 and the substrate placement plate 40 by the substrate placement plate support part 70 defines the integrated supply/discharge port 50.
  • the supercritical fluid for initial pressure supplied through may move along the lower surface of the substrate placement plate 40 to gradually diffuse into the processing area where the substrate W is disposed.
  • FIGS. 5 to 7 it turns out that the indication of the fluid flow in the space R1 is omitted.
  • the height adjustment unit 100 is a component that is accommodated in the receiving groove AG formed in the substrate mounting plate 40 and adjusts the height by an elastic force.
  • the substrate support 80 coupled to the height adjustment unit 100 is the upper housing It is configured to reduce the space existing between the upper surface of the substrate mounting plate 40 and the substrate by moving downward while in contact with (10). In this case, the separation distance between the upper surface of the substrate placement plate 40 and the substrate W is D1.
  • the substrate coupled to the height adjustment unit 100
  • the support unit 80 moves upward by the elastic force provided by the height adjustment unit 100 to expand the space existing between the upper surface of the substrate placement plate 40 and the substrate W, and the substrate transfer robot 2
  • the robot hand 3 is inserted into the enlarged spaced space and configured to carry in or carry out the substrate.
  • the separation distance between the upper surface of the substrate placement plate 40 and the substrate W is D2, which is greater than D1, and the separation distance D2 has a value greater than the thickness of the robot hand 3.
  • the height adjustment unit 100 is accommodated in the receiving groove (AG) formed in the substrate mounting plate 40, the support pin 102 coupled to the substrate support unit 80, the intermediate region of the support pin 102 It may be configured to include a protrusion 104 formed in and a compression spring 106 coupled to the support pin 102 such that one end contacts the protrusion 104 and the other end contacts the bottom surface of the receiving groove AG.
  • the protrusion 104 constituting the height adjustment unit 100 is a compression spring While moving upward by the elastic force provided by 106, the height adjustment part from the receiving groove AG is fixed to the fixing plate 404 formed on the upper end of the receiving groove AG formed in the substrate placement plate 40 It may be configured to prevent the departure of (100).
  • the substrate and the substrate placement plate 40 have a circular shape, and three or more receiving grooves AG are formed in a symmetrical shape along the edge of the substrate placement plate 40, and the height adjustment unit 100 may be configured to be coupled to the substrate placement plate 40 in a state accommodated in each of the receiving grooves AG formed in three or more symmetrical types.
  • the substrate support 80 is a component that is coupled to the height adjustment unit 100 to support the substrate and to space the substrate from the upper surface of the substrate placement plate 40.
  • the substrate support 80 and the height adjustment unit 100 may be coupled by a screw coupling method or the like, but the coupling method between the two is not limited thereto.
  • the separation space R2 existing between the upper surface of the substrate placement plate 40 and the substrate W by the substrate support part 80 provides the lower surface of the substrate W to the integrated supply/discharge port 50 It performs a function of shortening the time of the supercritical drying process by exposure to the initial pressure supercritical fluid supplied through and the drying supercritical fluid supplied through the upper supply port 60.
  • this separation space R2 is a space that is reduced or enlarged by the height adjustment unit 100.
  • the housing driving unit 90 is a means for opening and closing the housing, and after the supercritical drying process is completed, the lower housing 20 is driven to separate the lower housing 20 from the upper housing 10 to open the chamber, or When starting the drying process, the lower housing 20 may be driven to couple the lower housing 20 to the upper housing 10 to close the chamber.
  • the housing driving unit 90 is expressed as driving the lower housing 20, but this is only an example, and the housing driving unit 90 may be configured to drive the upper housing 10.
  • the supercritical fluid for initial pressurization and the supercritical fluid for drying may include carbon dioxide (CO 2 ), and the organic solvent may include alcohol, but is not limited thereto.
  • the alcohol may include methanol, ethanol, 1-propanol, 2-propanol, IPA, and 1-butanol. It is not limited.
  • carbon dioxide in a supercritical state is applied to the substrate W whose surface is moistened with an organic solvent such as alcohol in the chamber.
  • an organic solvent such as alcohol in the chamber.
  • the alcohol on the substrate W is dissolved in the supercritical carbon dioxide fluid.
  • the substrate W can be dried without collapse of the pattern.
  • R1, R2 separation space

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Solid Materials (AREA)

Abstract

Une chambre de séchage de substrat selon la présente invention comprend : une plaque de montage de substrat qui est couplée à la surface inférieure d'un boîtier inférieur et sur laquelle est placé un substrat sur lequel est appliqué un solvant organique ; une partie de réglage de hauteur qui est reçue dans une rainure de réception formée dans la plaque de montage de substrat et effectue un réglage de hauteur à l'aide d'une force élastique ; et une partie de support de substrat qui est couplée à la partie de réglage de hauteur de façon à espacer le substrat de la surface supérieure de la plaque de montage de substrat tout en supportant le substrat ; lorsqu'un processus de séchage supercritique est en cours d'exécution, la partie de support de substrat couplée à la partie de réglage de hauteur se déplaçant vers le bas tout en étant en contact avec un boîtier supérieur, ainsi l'espacement entre le substrat et la surface supérieure de la plaque de montage de substrat est réduit ; et lorsque le processus de séchage supercritique commence ou se termine, la partie de support de substrat couplée à la partie de réglage de hauteur se déplaçant vers le haut par la force élastique fournie par la partie de réglage de hauteur, ainsi l'espacement entre le substrat et la surface supérieure de la plaque de montage de substrat est agrandi, et une main de robot d'un robot de transfert de substrat est insérée dans l'espacement agrandi de façon à entrer ou sortir le substrat.
PCT/KR2020/004268 2019-04-09 2020-03-27 Chambre de séchage de substrat WO2020209536A1 (fr)

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KR20140112638A (ko) * 2013-03-12 2014-09-24 삼성전자주식회사 초임계 유체를 이용하는 기판 처리 장치, 이를 포함하는 기판 처리 시스템, 및 기판 처리 방법
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