WO2012033284A2 - Système de chambre conçu pour des procédés successifs - Google Patents

Système de chambre conçu pour des procédés successifs Download PDF

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Publication number
WO2012033284A2
WO2012033284A2 PCT/KR2011/005700 KR2011005700W WO2012033284A2 WO 2012033284 A2 WO2012033284 A2 WO 2012033284A2 KR 2011005700 W KR2011005700 W KR 2011005700W WO 2012033284 A2 WO2012033284 A2 WO 2012033284A2
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WO
WIPO (PCT)
Prior art keywords
chamber
cleaning
supercritical
ultrapure water
supply unit
Prior art date
Application number
PCT/KR2011/005700
Other languages
English (en)
Korean (ko)
Other versions
WO2012033284A3 (fr
Inventor
김재달
이강열
Original Assignee
주식회사 에이앤디코퍼레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 에이앤디코퍼레이션 filed Critical 주식회사 에이앤디코퍼레이션
Publication of WO2012033284A2 publication Critical patent/WO2012033284A2/fr
Publication of WO2012033284A3 publication Critical patent/WO2012033284A3/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02101—Cleaning only involving supercritical fluids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like

Definitions

  • the present invention relates to a chamber system capable of a continuous process, and more particularly to a chamber system capable of a continuous process capable of continuously performing wet and supercritical processes using one chamber.
  • the aspect ratio of semiconductor patterns is gradually increasing with the improvement of the technology of semiconductor integrated circuits, and it is difficult for the cleaning solution to penetrate the inside of the microstructure due to the surface tension due to the wet cleaning technology used for semiconductor manufacturing.
  • the cleaning capacity limit has been reached.
  • Supercritical refers to the state of a material having an intermediate characteristic between liquid and gas. It has a high dissolving power and a high diffusion coefficient, has a low viscosity and a surface tension, and is easy to penetrate between fine patterns and is easily removed.
  • the chamber for using the supercritical pressure is a high pressure, and conventionally, the chamber for the supercritical treatment is provided separately from the chamber for wet cleaning and the chamber for drying.
  • a wet cleaning chamber and a supercritical chamber should be provided.
  • the problem to be solved by the present invention in view of the above problems is to provide a chamber system capable of a continuous process that can continuously perform the wet treatment and supercritical treatment in one chamber.
  • the present invention for solving the above problems, the chamber, an ultrapure water supply unit and a cleaning liquid supply unit for selectively supplying the ultrapure water and the cleaning chemical liquid to the chamber, a first discharge unit for discharging the ultrapure water and the cleaning liquid of the chamber and A supercritical supply for supplying supercritical gas to the upper side of the chamber, an IPA supply for selectively supplying isopropyl alcohol to the upper side of the chamber, and a second exhaust for discharging the supercritical gas; do.
  • the chamber system capable of the continuous process of the present invention configured as described above can perform the wet cleaning, the supercritical cleaning and the drying process continuously in one chamber, thereby enabling effective cleaning of the highly integrated semiconductor, and the wet and ultra Since there is no need to move the wafer in the critical cleaning process, there is an effect that can prevent the occurrence of process defects.
  • wet cleaning, supercritical cleaning, and drying in one chamber can reduce the time required for the process, thus improving the productivity.
  • FIG. 1 is a block diagram of a chamber system capable of a continuous process according to a preferred embodiment of the present invention.
  • FIG. 2 is a diagram illustrating a chamber in which the wet process is performed in FIG. 1.
  • FIG. 3 is a configuration diagram of a chamber in which a supercritical process is performed.
  • FIG. 4 is a configuration diagram of a chamber in which a drying process using IPA is performed.
  • FIG. 1 is a block diagram of a chamber system capable of a continuous process according to a preferred embodiment of the present invention.
  • a chamber system capable of a continuous process includes a chamber 10 which provides a space in which a plurality of wafers are loaded and the wafers are processed according to an externally supplied fluid;
  • Ultrapure water supply unit 20 for supplying ultrapure water into the chamber 10 from the lower side of the chamber 10, and cleaning chemicals for supplying the cleaning liquid (chamical) into the chamber 10 from the lower side of the chamber 10
  • IPA isopropyl alcohol
  • a chamber system capable of a continuous process is a wet cleaning by a mixed supply of ultrapure water and a cleaning chemical solution, a rinsing process by supplying ultrapure water, a cleaning process by supplying supercritical gas, ultrapure water and cleaning
  • the process of cleaning the wafer by supplying the supercritical gas with the supply of the chemical liquid, the process of supplying and drying the supercritical gas, and the drying process using the IPA after cleaning or rinsing with the ultrapure water and the cleaning chemical or ultrapure water are selectively performed. Possible configurations are described below in detail.
  • a semiconductor wafer is described as an example, but it is obvious that LED, MEMS, solar cell, precision instrument, etc. may be applied.
  • FIG. 2 is a configuration diagram of a chamber for explaining a process of wet cleaning using a chamber system capable of a continuous process according to a preferred embodiment of the present invention shown in FIG.
  • a bath 11 is positioned inside the chamber 10, and a plurality of wafers W are loaded into the bath 11.
  • each of the plurality of wafers W is charged in a direction perpendicular to the ground, but may be charged in a state parallel to the ground, and is selectively inclined within a range of 0 to 90 degrees with respect to the ground. can do.
  • Both valves V1 and V2 positioned between each of the ultrapure water supply unit 20 and the cleaning chemical supply unit 30 and the chamber 10 are opened for wet cleaning, and thus, the ultrapure water and the cleaning chemical are respectively discharged from the bath ( 11) fed and mixed.
  • the wafers W charged in the bath 11 by the mixed liquid of the ultrapure water and the cleaning chemical are cleaned.
  • a high pressure supercritical gas for example, supercritical CO 2 and an additive
  • the supercritical supply unit 50 is introduced from the supercritical supply unit 50 through the valve V4 to the chamber 10. It can be supplied to the inner top of the).
  • the internal temperature of the chamber 10 may be further provided with a heating means such as a heater outside the chamber 10 to be adjusted to a suitable temperature in the temperature range of 10 to 400 °C.
  • a heating means such as a heater outside the chamber 10 to be adjusted to a suitable temperature in the temperature range of 10 to 400 °C.
  • the valve V3 is opened to discharge the ultrapure water and the cleaning chemical liquid in the bath 11 to the outside.
  • the IPA is supplied into the chamber 10 from the IPA supply unit 60 through the valve V5
  • drying may be performed by the difference in the surface tension of the ultrapure water and the IPA.
  • the IPA supply unit 60 has been described to supply isopropyl alcohol mainly used in a drying process, but may also supply alcohols such as ethanol and methanol having a difference in surface tension from ultrapure water.
  • ultrapure water is supplied from the ultrapure water supply unit 20 to the bath 11, and a supercritical gas in which a rinsable additive is mixed is supplied to the chamber 10 together with ultrapure water to perform a rinse process. can do.
  • the supercritical gas may be cleaned, rinsed, or dried depending on the additive, and additives required for the process may be supplied together while wet cleaning or rinsing is in progress.
  • the rinse After the rinse proceeds, it is also discharged to the first discharge portion 40 through the valve (V3). If the supercritical gas is supplied, the supercritical gas is discharged through the valve V6 and the second discharge part 70.
  • Figure 3 is a block diagram of a chamber system capable of a continuous process of the present invention in the process of supercritical cleaning, rinsing or drying.
  • valves V1, V2, V3, V5, and V6 except the valve V4 are closed when the supercritical cleaning, rinsing, or drying process is performed, and the wafer W is loaded. At supercritical gas and additives are supplied together. At this time, the internal pressure of the chamber 10 is operated under the condition of 0 to 500bar.
  • cleaning, rinsing or drying may be performed depending on the type of the additive.
  • the valve V4 When the supercritical gas and the additive are supplied together to the chamber 10 to clean, rinse or dry the wafer W, the valve V4 is closed. In the state where the cleaning or rinse processing is completed, the valve V6 is completed. ), The supercritical gas and the additive are discharged through the second discharge unit 70.
  • FIG 4 is an internal configuration diagram of the chamber 10 in which a drying process is in progress after the wet treatment.
  • valve V4 is opened to supply the IPA to the chamber 10 to dry the wafer W after wet cleaning or wet rinsing.
  • the IPA is supplied from the inner upper side of the chamber 10, in which the valve V3 is opened, so that the IPA is a mixture of ultrapure water and cleaning liquid or ultrapure water used for the wet cleaning or wet rinsing process. While pushing, the wafer is dried by the difference in surface tension with that ultrapure water.
  • the mixture of the ultrapure water and the cleaning liquid or the ultrapure water is discharged to the first discharge part 40 through the open valve V3.
  • the present invention can perform wet cleaning, wet rinsing, mixed cleaning and rinsing of wet and supercritical, rinsing by supercritical, rinsing, and drying while using a single chamber 10. Drying is also possible to proceed in the chamber (10).
  • the present invention enables to perform the wet treatment and supercritical treatment continuously in one chamber, to simplify the process and reduce the cost, there is industrial applicability.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

La présente invention concerne un système de chambre conçu pour des procédés successifs comprenant : une chambre ; une partie de fourniture d'eau ultra-pure et une partie de fourniture de solution chimique nettoyante, qui fournissent sélectivement à la chambre l'eau ultra-pure et une solution chimique nettoyante ; une première partie d'évacuation pour l'évacuation de l'eau ultra-pure et d'une solution chimique nettoyante depuis la chambre ; une partie de fourniture supercritique pour la fourniture de gaz supercritique à la partie supérieure de la chambre ; une partie de fourniture d'IPA pour la fourniture sélective d'alcool isopropylique à la partie supérieure de la chambre ; et une seconde partie d'évacuation pour l'évacuation du gaz supercritique. Par conséquent, un procédé de nettoyage de type humide, un procédé de nettoyage supercritique et un procédé de séchage peuvent être réalisés successivement dans une chambre afin de permettre le nettoyage plus efficace de dispositifs semi-conducteurs hautement intégrés. En outre, puisque les plaquettes sont immobilisées pendant le procédé de nettoyage de type humide et le procédé de nettoyage supercritique, l'apparition de défauts lors des procédés peut être évitée.
PCT/KR2011/005700 2010-09-06 2011-08-03 Système de chambre conçu pour des procédés successifs WO2012033284A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020100086982A KR101156742B1 (ko) 2010-09-06 2010-09-06 연속공정이 가능한 챔버 시스템
KR10-2010-0086982 2010-09-06

Publications (2)

Publication Number Publication Date
WO2012033284A2 true WO2012033284A2 (fr) 2012-03-15
WO2012033284A3 WO2012033284A3 (fr) 2012-05-03

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WO (1) WO2012033284A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113908581A (zh) * 2021-09-30 2022-01-11 北京北方华创微电子装备有限公司 半导体设备及其排液装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180084692A (ko) 2018-06-04 2018-07-25 주식회사 유닉 피세정물의 세정 및 건조 방법
KR102636979B1 (ko) 2019-04-26 2024-02-14 삼성전자주식회사 멀티 챔버 장치

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040074632A (ko) * 2003-02-19 2004-08-25 소니 가부시끼 가이샤 세정방법
KR100713209B1 (ko) * 2007-02-06 2007-05-02 서강대학교산학협력단 세정장치에 사용되는 고압세정기
KR100766343B1 (ko) * 2006-05-24 2007-10-11 세메스 주식회사 기판 세정 건조 방법

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101109075B1 (ko) * 2009-07-24 2012-01-31 세메스 주식회사 기판 처리 장치 및 방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040074632A (ko) * 2003-02-19 2004-08-25 소니 가부시끼 가이샤 세정방법
KR100766343B1 (ko) * 2006-05-24 2007-10-11 세메스 주식회사 기판 세정 건조 방법
KR100713209B1 (ko) * 2007-02-06 2007-05-02 서강대학교산학협력단 세정장치에 사용되는 고압세정기

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113908581A (zh) * 2021-09-30 2022-01-11 北京北方华创微电子装备有限公司 半导体设备及其排液装置

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Publication number Publication date
KR101156742B1 (ko) 2012-06-14
KR20120024213A (ko) 2012-03-14
WO2012033284A3 (fr) 2012-05-03

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