WO2020166824A1 - Chambre de séchage de substrat - Google Patents

Chambre de séchage de substrat Download PDF

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Publication number
WO2020166824A1
WO2020166824A1 PCT/KR2020/000159 KR2020000159W WO2020166824A1 WO 2020166824 A1 WO2020166824 A1 WO 2020166824A1 KR 2020000159 W KR2020000159 W KR 2020000159W WO 2020166824 A1 WO2020166824 A1 WO 2020166824A1
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WO
WIPO (PCT)
Prior art keywords
substrate
drying
supercritical fluid
lower housing
supply
Prior art date
Application number
PCT/KR2020/000159
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English (en)
Korean (ko)
Inventor
신희용
윤병문
Original Assignee
무진전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 무진전자 주식회사 filed Critical 무진전자 주식회사
Publication of WO2020166824A1 publication Critical patent/WO2020166824A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Definitions

  • the present invention relates to a substrate drying chamber. More specifically, the present invention induces a symmetrical flow when supplying and discharging the supercritical fluid, so that the supercritical fluid is uniformly distributed in the chamber to supply and discharge the substrate, thereby increasing the drying efficiency of the substrate.
  • the present invention relates to a substrate drying chamber capable of preventing a problem in which particles are introduced into a substrate in a chamber when opened, and a pattern collapse in a central portion of the substrate.
  • the semiconductor device manufacturing process includes various processes such as a lithography process, an etching process, and an ion implantation process, and after each process is completed, the surface of the wafer is removed by removing impurities or residues remaining on the wafer surface before proceeding to the next process.
  • a cleaning process and a drying process are being performed for cleaning.
  • a chemical solution for cleaning treatment is supplied to the surface of the wafer, and then deionized water (DIW) is supplied to perform a rinse treatment.
  • DIW deionized water
  • a drying treatment of drying the wafer by removing deionized water remaining on the wafer surface is performed.
  • IPA isopropyl alcohol
  • IPA on the wafer is dissolved in the supercritical carbon dioxide (CO 2 ) fluid by supplying carbon dioxide in a supercritical state to a wafer whose surface is moistened with isopropyl alcohol (IPA) in the chamber. And by gradually discharging the supercritical carbon dioxide (CO 2 ) fluid dissolving IPA from the chamber, the wafer can be dried without collapse of the pattern.
  • CO 2 supercritical carbon dioxide
  • FIG. 2 shows a chamber for processing a substrate disclosed in Korean Patent Laid-Open Publication No. 10-2017-0137243, which is a prior art related to a substrate processing apparatus using such a supercritical fluid.
  • the organic solvent may flow into the bonding surface of the upper body 430 and the lower body 420 constituting the high-pressure chamber 410. .
  • the organic solvent introduced into the bonding surface of the upper body 430 and the lower body 420 becomes particles and accumulates around it.
  • the chamber is opened to transport the processed substrate to the outside. At this time, particles around the bonding surface of the upper body 430 and the lower body 420 due to the pressure difference between the inside and the outside of the chamber It can be introduced into this chamber.
  • a lower supply port 422 for supplying a supercritical fluid for initial pressurization, and an exhaust port for exhausting the supercritical fluid after drying Since 426 is not located in the center of the lower body 420, it is difficult to supply and discharge the supercritical fluid by evenly distributing the supercritical fluid inside the chamber by forming an asymmetric flow when supplying and discharging the fluid, thereby reducing drying efficiency. A problem occurs.
  • the supercritical fluid supplied through the upper supply port 432 located at the center of the upper body 430 is transferred to the substrate W. It has a structure that is sprayed directly. According to this structure, even if some supercritical fluid is formed in the chamber through the initial pressurization process, the pattern collapses at the center of the substrate W due to an impact force during rapid pressurization through the upper supply port 432 There is a problem that (pattern collapse) may occur. In addition, there is a problem in that it is difficult to uniformly distribute and supply the supercritical fluid inside the chamber, which may lead to a decrease in substrate drying efficiency.
  • Patent Document 0001 Republic of Korea Patent Publication No. 10-2017-0137243 (published date: December 13, 2017, name: substrate processing apparatus and method)
  • the technical problem of the present invention is to prevent pattern collapse at the center of the substrate by symmetrically dispersing the drying supercritical fluid supplied through the upper supply port to the entire surface of the substrate using a spray nozzle unit.
  • the technical object of the present invention is to provide a supply path of the supercritical fluid for initial pressurization through one integrated supply/discharge port and a discharge path of the supercritical fluid in which the organic solvent formed on the substrate after drying is dissolved, thereby providing a supercritical fluid.
  • a supply path of the supercritical fluid for initial pressurization through one integrated supply/discharge port and a discharge path of the supercritical fluid in which the organic solvent formed on the substrate after drying is dissolved, thereby providing a supercritical fluid.
  • the technical problem of the present invention is to block re-inflow particles when the chamber is opened after the drying process is completed by using a substrate placement plate that is required for arranging a substrate, and initial pressure directed directly to the substrate surface at the beginning of the drying process. It prevents the collapse of the pattern formed on the substrate by preventing the flow of the supercritical fluid for use, and prevents the problem that particles that may be contained in the supercritical fluid for initial pressurization are deposited on the substrate, or reduces the amount of deposition, and The drying process time is shortened by reducing the working volume of the chamber due to the volume.
  • the technical problem of the present invention is to arrange the substrate on the substrate placement plate so as to be positioned higher than the bonding surface between the lower housing and the upper housing, so that when the drying process is completed and the chamber is opened, it is provided on the bonding surface between the lower housing and the upper housing. Particles around the sealed part are prevented from flowing into the substrate by gravity due to the height difference between the substrate and the bonding surface.
  • the substrate drying chamber according to the present invention for solving this technical problem includes an upper housing, a lower housing coupled to the upper housing so as to be openable and closed, a sealing part provided on a coupling surface between the lower housing and the upper housing, and the lower housing.
  • the substrate placement plate on which the substrate is bonded to the bottom surface of and on which the substrate on which the pattern wetted with the organic solvent is formed is placed, and the supercritical fluid for drying is formed from the central area of the upper housing toward the substrate placement plate.
  • An upper supply port providing a supply path, a spray nozzle part for symmetrically dispersing the drying supercritical fluid supplied through the upper supply port and supplied through the upper supply port, and for initial pressurization
  • an integrated supply/discharge port providing a supply path of the supercritical fluid and a discharge path of the mixed fluid in which the organic solvent is dissolved in the drying supercritical fluid after drying according to the supply of the drying supercritical fluid.
  • the supercritical fluid for drying supplied through the upper supply port is symmetrically dispersed over the entire surface of the substrate by the spray nozzle unit, so that the pattern collapse at the center of the substrate ( pattern collapse) is prevented.
  • the integrated supply/discharge port is formed to extend from one side to the other side of the lower housing and is formed to face the substrate arrangement plate in an intermediate region between the one side and the other side. It is characterized by being.
  • the integrated supply/discharge port includes a first conduit part formed from one side of the lower housing to the middle region, and the substrate is disposed in communication with the first conduit part in the intermediate region. And a second conduit portion formed to face the plate and communicated with the common port portion and the first conduit in the intermediate region to the other side of the lower housing.
  • the first conduit portion and the common port portion provide a supply path for an initial pressurization supercritical fluid, and the common port portion and the second conduit portion are connected to the drying supercritical fluid. It characterized in that it provides a discharge path of the mixed fluid in which the organic solvent is dissolved.
  • the substrate is disposed on the substrate mounting plate so as to be positioned higher than the bonding surface of the lower housing and the upper housing, and the drying process is completed to open the lower housing and the upper housing.
  • particles around the sealing part provided on the bonding surface are prevented from entering the substrate by gravity according to a height difference between the substrate and the bonding surface.
  • the supercritical fluid for initial pressure supplied through the first conduit portion and the common port portion is blocked by the substrate arrangement plate so that direct injection to the substrate is prevented.
  • one end is coupled to the bottom surface of the lower housing and the other end is coupled to the substrate placement plate, thereby supporting the substrate placement plate while separating the substrate placement plate from the bottom surface of the lower housing. It characterized in that it further comprises a substrate arrangement plate support.
  • the first spaced space existing between the bottom surface of the lower housing and the substrate placement plate by the substrate placement plate support part is for initial pressure supplied through the integrated supply/discharge port. It is characterized in that the supercritical fluid moves along the lower surface of the substrate arrangement plate to gradually diffuse into the processing area in which the substrate is disposed.
  • the substrate drying chamber according to the present invention further includes a substrate support portion having one end coupled to the upper surface of the substrate arrangement plate and the other end coupled to the substrate, supporting the substrate and separating the substrate from the upper surface of the substrate arrangement plate Characterized in that.
  • the second separation space existing between the upper surface of the substrate arrangement plate and the substrate by the substrate support portion is an initial pressurization supplied to the lower surface of the substrate through the integrated supply/discharge port. It is characterized in that the drying process is shortened by exposing the supercritical fluid for drying and the supercritical fluid for drying supplied through the spray nozzle unit.
  • the present invention by symmetrically dispersing the drying supercritical fluid supplied through the upper supply port to the front surface of the substrate using the spray nozzle unit, it is possible to prevent pattern collapse at the center of the substrate. There is.
  • the supply path of the supercritical fluid for initial pressurization and the discharge path of the supercritical fluid in which the organic solvent formed on the substrate after drying is dissolved is symmetrical when supplying and discharging the supercritical fluid.
  • the supercritical fluid is uniformly distributed and supplied and discharged in the chamber by inducing a natural flow, thereby increasing substrate drying efficiency.
  • a substrate placement plate that is required for arranging the substrate, it blocks re-inflow particles when the chamber is opened after the drying process is completed, and the initial pressure supercritical fluid flows directly to the substrate surface at the beginning of the drying process. It is possible to prevent the collapse of the pattern formed on the substrate, prevent the problem that particles that may be contained in the initial pressurization supercritical fluid are deposited on the substrate, or reduce the amount of deposition, and reduce the amount of deposition. Due to the reduced working volume of the chamber there is an effect of shortening the drying process time.
  • FIG. 1 is a diagram showing a pattern collapse phenomenon occurring in a substrate drying process according to the prior art
  • FIG. 2 is a view showing a conventional substrate drying chamber
  • FIG. 3 is a view showing a substrate drying chamber according to an embodiment of the present invention.
  • FIG. 4 is a diagram showing a diffusion path of a supercritical fluid for initial pressurization in an embodiment of the present invention
  • FIG. 5 is a diagram showing a diffusion path of a drying supercritical fluid in an embodiment of the present invention
  • FIG. 6 is a view showing a discharge path of a supercritical fluid in which an organic solvent is dissolved in an embodiment of the present invention
  • FIG. 7 is a diagram illustrating a sealing portion provided on a bonding surface between the upper housing and the lower housing and a substrate of particles existing therearound when the drying process is completed and the lower housing and the upper housing are opened, according to an embodiment of the present invention. It is a diagram for explaining the principle of preventing the inflow of.
  • first or second may be used to describe various elements, but the elements should not be limited by the terms. The terms are only for the purpose of distinguishing one component from other components, for example, without departing from the scope of the rights according to the concept of the present invention, the first component may be named as the second component and similarly the second component. The component may also be referred to as a first component.
  • FIG. 3 is a view showing a substrate drying chamber according to an embodiment of the present invention
  • FIG. 4 is a view showing a diffusion path of a supercritical fluid for initial pressurization in an embodiment of the present invention
  • FIG. in an embodiment of the present invention a diagram showing a diffusion path of a supercritical fluid for drying
  • FIG. 6 is a view showing a discharge path of a supercritical fluid in which an organic solvent is dissolved in an embodiment of the present invention.
  • 7 shows, in an embodiment of the present invention, when the drying process is completed and the lower housing and the upper housing are opened, the sealing portion provided on the bonding surface of the upper housing and the lower housing and particles existing around the sealing portion are transferred to the substrate. It is a diagram for explaining the principle that inflow is prevented.
  • a substrate drying chamber 1 includes an upper housing 10, a lower housing 20, a sealing unit 30, a substrate mounting plate 40, and an integral type. It includes a supply/discharge port 50, an upper supply port 60, a spray nozzle unit 65, a substrate plate support unit 70, a substrate support unit 80, and a housing driving unit 90.
  • the upper housing 10 and the lower housing 20 are coupled to each other so as to be able to open and close, and provide a space in which a drying process is performed.
  • the upper housing 10 and the lower housing 20 may be configured to have a cylindrical shape, but are not limited thereto.
  • an upper supply port 60 is formed in the upper housing 10
  • an integrated supply/discharge port 50 is formed in the lower housing 20.
  • the sealing part 30 is provided on the coupling surface (C) of the lower housing 20 and the upper housing 10, and maintains the airtightness of the coupling surface (C) between the lower housing 20 and the upper housing 10. Block the inner area of the chamber from the outside.
  • the sealing part 30 provided on the coupling surface C of the upper housing 10 and the lower housing 20
  • the substrate W is a bonding surface of the lower housing 20 and the upper housing 10
  • the sealing part provided on the bonding surface (C) (30)
  • the surrounding particles may be configured to be prevented from entering the substrate W by gravity according to a height difference between the substrate W and the bonding surface C.
  • the substrate arranging plate 40 is a component on which a substrate W on which an organic solvent is formed is attached to the bottom surface 22 of the lower housing 20.
  • the initial pressure supercritical fluid supplied through the first conduit portion 510 and the common port portion 520 constituting the integrated supply/discharge port 50 is blocked by the substrate mounting plate 40 and thus the substrate ( It can be configured to prevent direct injection to W).
  • the substrate W as an object of the drying process is disposed.
  • the supercritical fluid for initial pressure flow directly to the surface of the substrate W at the beginning of the drying process by using the substrate placement plate 40 required for this purpose. It is possible to prevent the collapse of the pattern formed on the substrate (W), prevent the problem that particles that may be contained in the initial pressure supercritical fluid are deposited on the substrate (W) or reduce the amount of deposition,
  • the drying process time can be shortened by reducing the working volume of the chamber due to the volume occupied by the substrate arrangement plate 40.
  • the integrated supply/discharge port 50 is formed extending from one side 24 to the other side 26 of the lower housing 20, and the substrate is arranged in the intermediate region 28 between one side 24 and the other side 26. It is formed to face the plate 40, and provides a supply path of the supercritical fluid for initial pressurization and a discharge path of the supercritical fluid in which the organic solvent formed on the substrate W after drying is dissolved.
  • the supercritical fluid is When supplying and discharging, a symmetrical flow is induced and the supercritical fluid is uniformly distributed in the chamber to supply and discharge, thereby increasing substrate drying efficiency.
  • such an integrated supply/discharge port 50 has a first conduit portion 510 formed from one side 24 of the lower housing 20 to the middle region 28, and the first conduit portion 510 in the middle region 28.
  • the lower housing is in communication with the conduit part 510 and is in communication with the common port part 520 and the first conduit part 510 in the common port part 520 and the intermediate region 28 formed to face the substrate mounting plate 40.
  • It includes a second conduit part 530 formed up to the other side 26 of 20, and the first conduit part 510 and the common port part 520 provide a supply path of the supercritical fluid for initial pressurization,
  • the common port part 520 and the second conduit part 530 may be configured to provide a discharge path for the supercritical fluid in which the organic solvent is dissolved.
  • the upper supply port 60 is a component formed to face the substrate mounting plate 40 in the central region of the upper housing 10 to provide a supply path of the supercritical fluid for drying.
  • the spray nozzle unit 65 is coupled to the end of the upper supply port 60 and has a function of symmetrically dispersing the drying supercritical fluid supplied through the upper supply port 60 to the front surface of the substrate W. Perform.
  • the drying supercritical fluid supplied through the upper supply port 60 is symmetrically dispersed to the front surface of the substrate W by the spray nozzle unit 65, so that the pattern collapses at the center of the substrate W. ) Is prevented.
  • the supercritical fluid for initial pressurization through the first conduit part 510 and the common port part 520 constituting the integrated supply/discharge port 50 It is supplied during the set initial pressurization time, 2) After the initial pressurization time has elapsed, the supply of the initial pressurization supercritical fluid is blocked, and the supercritical fluid for drying through the spray nozzle unit 65 coupled to the upper supply port 60 Is supplied during the drying time, and 3) the supply of the supercritical fluid for drying is blocked after the drying time has elapsed, and the common port part 520 and the second conduit part 530 constituting the integrated supply/discharge port 50 Through this, the mixed fluid can be discharged during the discharge time.
  • the supply of the supercritical fluid for drying and the discharge of the mixed fluid may be repeated a set number of times, that is, flushing.
  • the upper supply port in the flushing process Since the drying supercritical fluid supplied through 60 is symmetrically dispersed over the entire surface of the substrate W by the spray nozzle unit 65, pattern collapse at the center of the substrate W is prevented. Is prevented.
  • the substrate placement plate support part 70 has one end coupled to the bottom surface 22 of the lower housing 20 and the other end coupled to the substrate placement plate 40, and supports the substrate placement plate 40 while supporting the substrate placement plate ( It is a component that separates 40) from the bottom surface 22 of the lower housing 20.
  • the first spaced space R1 existing between the bottom surface 22 of the lower housing 20 and the substrate placement plate 40 by the substrate placement plate support part 70 is an integral supply/discharge port 50
  • the supercritical fluid for initial pressure supplied through may move along the lower surface of the substrate placement plate 40 to gradually diffuse into the processing area where the substrate W is disposed.
  • the substrate support 80 has one end coupled to the upper surface of the substrate placement plate 40 and the other end coupled to the substrate W. While supporting the substrate W, the substrate W is attached to the upper surface of the substrate placement plate 40. It is a component that separates from
  • the second separation space R2 existing between the upper surface of the substrate mounting plate 40 and the substrate W by the substrate support 80 provides the lower surface of the substrate W as the integrated supply/discharge port ( It performs a function of shortening the drying process time by exposure to the initial pressure supercritical fluid supplied through 50) and the drying supercritical fluid supplied through the upper supply port 60.
  • the housing driving unit 90 is a means for opening and closing the housing, and after the drying process is completed, the lower housing 20 is driven to separate the lower housing 20 from the upper housing 10 to open the chamber or initiate the drying process. In this case, the lower housing 20 may be driven to couple the lower housing 20 to the upper housing 10 to close the chamber.
  • the housing driving unit 90 is expressed as driving the lower housing 20, but this is only an example, and the housing driving unit 90 may be configured to drive the upper housing 10.
  • the supercritical fluid for initial pressurization and the supercritical fluid for drying may include carbon dioxide (CO 2 ), and the organic solvent may include alcohol, but is not limited thereto.
  • the alcohol may include methanol, ethanol, 1-propanol, 2-propanol, IPA, and 1-butanol. It is not limited.
  • carbon dioxide in a supercritical state is applied to the substrate W whose surface is moistened with an organic solvent such as alcohol in the chamber.
  • an organic solvent such as alcohol in the chamber.
  • the alcohol on the wafer is dissolved in the supercritical carbon dioxide fluid.
  • the substrate W can be dried without collapse of the pattern.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Solid Materials (AREA)

Abstract

La présente invention concerne une chambre de séchage de substrat. La présente invention comprend : un boîtier supérieur ; un boîtier inférieur couplé au boîtier supérieur de manière à pouvoir être ouvert/fermé ; une partie d'étanchéité disposée au niveau des surfaces de couplage du boîtier supérieur et du boîtier inférieur ; une plaque de montage de substrat qui est couplée à une surface inférieure du boîtier inférieur, et sur laquelle un substrat ayant un motif mouillé avec un solvant organique est monté ; un orifice d'alimentation supérieur formé pour faire face à la plaque de montage de substrat dans une région centrale du boîtier supérieur de façon à fournir un trajet d'alimentation pour un fluide supercritique de séchage ; une partie de buse de pulvérisation qui est couplée à l'extrémité de l'orifice d'alimentation supérieur, et qui disperse de manière symétrique, sur la surface avant du substrat, le fluide supercritique de séchage fourni à travers l'orifice d'alimentation supérieur ; et un orifice d'alimentation/d'évacuation intégré destiné à fournir un trajet d'alimentation pour un fluide critique pour une compression initiale et un trajet d'évacuation pour un fluide de mélange dans lequel le solvant organique est dissous dans le fluide supercritique de séchage après séchage selon l'alimentation du fluide supercritique de séchage.
PCT/KR2020/000159 2019-02-13 2020-01-06 Chambre de séchage de substrat WO2020166824A1 (fr)

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KR1020190016600A KR102258986B1 (ko) 2019-02-13 2019-02-13 기판 건조 챔버
KR10-2019-0016600 2019-02-13

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TW (1) TWI748341B (fr)
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KR20140112638A (ko) * 2013-03-12 2014-09-24 삼성전자주식회사 초임계 유체를 이용하는 기판 처리 장치, 이를 포함하는 기판 처리 시스템, 및 기판 처리 방법
KR20180059641A (ko) * 2016-11-25 2018-06-05 세메스 주식회사 기판 처리 장치 및 방법
KR20180125764A (ko) * 2017-05-16 2018-11-26 주식회사 케이씨텍 기판 처리용 챔버

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