WO2020175788A1 - Chambre de séchage de substrat - Google Patents

Chambre de séchage de substrat Download PDF

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Publication number
WO2020175788A1
WO2020175788A1 PCT/KR2020/000161 KR2020000161W WO2020175788A1 WO 2020175788 A1 WO2020175788 A1 WO 2020175788A1 KR 2020000161 W KR2020000161 W KR 2020000161W WO 2020175788 A1 WO2020175788 A1 WO 2020175788A1
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WIPO (PCT)
Prior art keywords
substrate
lower housing
supercritical fluid
drying
path
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PCT/KR2020/000161
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English (en)
Korean (ko)
Inventor
신용식
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무진전자 주식회사
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Publication of WO2020175788A1 publication Critical patent/WO2020175788A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67772—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving removal of lid, door, cover
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Definitions

  • the present invention relates to a substrate drying chamber. More specifically, the present invention uses the foreign matter discharge unit formed in the lower housing to discharge foreign substances such as particles that are impregnated in the sealing unit or are discharged to the outside when the supercritical fluid is finally discharged after the drying process is completed. It can prevent the problem from flowing into the substrate inside the chamber, and induces a symmetrical flow when supplying and discharging the supercritical fluid, thereby increasing the substrate drying efficiency by supplying and discharging the supercritical fluid evenly inside the chamber. It relates to a substrate drying chamber.
  • the semiconductor device manufacturing process includes various processes such as a lithography process, an etching process, and an ion implantation process, and after each process is completed, the surface of the wafer is removed by removing impurities or residues remaining on the wafer surface before proceeding to the next process.
  • a cleaning process and a drying process are being performed for cleaning.
  • a chemical liquid for cleaning treatment is supplied to the surface of the wafer, and then deionized water (DIW) is supplied to perform a rinse treatment.
  • DIW deionized water
  • a drying treatment of drying the wafer by removing deionized water remaining on the wafer surface is performed.
  • IPA isopropyl alcohol
  • IPA on the wafer is dissolved in the supercritical carbon dioxide (CO 2 ) fluid by supplying carbon dioxide in a supercritical state to a wafer whose surface is moistened with isopropyl alcohol (IPA) in the chamber. And by gradually discharging the supercritical carbon dioxide (CO 2 ) fluid dissolving IPA from the chamber, the wafer can be dried without collapse of the pattern.
  • CO 2 supercritical carbon dioxide
  • FIG. 2 shows a chamber for processing a substrate disclosed in Korean Patent Laid-Open Publication No. 10-2017-0137243, which is a prior art related to a substrate processing apparatus using such a supercritical fluid.
  • the organic solvent may flow into the bonding surface of the upper body 430 and the lower body 420 constituting the high-pressure chamber 410. .
  • the organic solvent introduced into the bonding surface of the upper body 430 and the lower body 420 becomes particles and accumulates around it.
  • the chamber is opened to transport the processed substrate to the outside. At this time, particles around the bonding surface of the upper body 430 and the lower body 420 due to the pressure difference between the inside and the outside of the chamber It can be introduced into this chamber.
  • a lower supply port 422 for supplying a supercritical fluid for initial pressure, and an exhaust port for exhausting the supercritical fluid after drying Since 426 is not located in the center of the lower body 420, it is difficult to supply and discharge the supercritical fluid by evenly distributing the supercritical fluid inside the chamber by forming an asymmetric flow when supplying and discharging the fluid, thereby reducing drying efficiency. A problem occurs.
  • Patent Document 0001 Republic of Korea Patent Publication No. 10-2017-0137243 (published date: December 13, 2017, name: substrate processing apparatus and method)
  • the technical problem of the present invention is to use a foreign material discharge part formed in the lower housing to discharge foreign substances such as particles that are impregnated in the sealing part or discharged to the outside when the supercritical fluid is finally discharged after the drying process is completed. This is to prevent the problem from flowing into the substrate inside the chamber.
  • the technical problem of the present invention is to arrange the substrate on the substrate placement plate so as to be positioned higher than the bonding surface between the lower housing and the upper housing, so that when the drying process is completed and the chamber is opened, Particles around the sealed part are prevented from flowing into the substrate by gravity due to the height difference between the substrate and the bonding surface.
  • the technical problem of the present invention is to provide a supply path of the supercritical fluid for initial pressurization and a discharge path of the supercritical fluid in which the organic solvent formed on the substrate after drying is dissolved through one integrated supply/discharge port, thereby providing a supercritical fluid.
  • a supply path of the supercritical fluid for initial pressurization and a discharge path of the supercritical fluid in which the organic solvent formed on the substrate after drying is dissolved through one integrated supply/discharge port, thereby providing a supercritical fluid.
  • the technical problem of the present invention is to block re-inflow particles when the chamber is opened after the drying process is completed by using a substrate placement plate that is required for arranging a substrate, and initial pressure directed directly to the substrate surface at the beginning of the drying process. It prevents the collapse of the pattern formed on the substrate by preventing the flow of the supercritical fluid for use, and prevents the problem that particles that may be contained in the supercritical fluid for initial pressurization are deposited on the substrate or reduces the amount of deposition, and The drying process time is shortened by reducing the working volume of the chamber due to the volume.
  • the substrate drying chamber according to the present invention for solving this technical problem includes an upper housing, a lower housing coupled to the upper housing so as to be openable and closed, a sealing part provided on a coupling surface between the lower housing and the upper housing, and the lower housing.
  • the substrate placement plate on which the substrate is bonded to the bottom surface of and on which the substrate on which the pattern wetted with the organic solvent is formed is placed, and the supercritical fluid for drying is formed from the central area of the upper housing toward the substrate placement plate.
  • the organic solvent is dissolved in the drying supercritical fluid after drying according to the supply path of the initial pressure supercritical fluid and the supply of the drying supercritical fluid, which are formed in the upper supply port providing a supply path and the lower housing.
  • An integrated supply/discharge port that provides a discharge path of the mixed fluid and is formed in the lower housing and provides a path through which foreign matters that are impregnated in the sealing part or which exist around the sealing part are introduced and discharged to the outside. It includes a foreign matter discharge part.
  • the foreign material discharging part is formed in a vertical direction along the edge of the lower housing so as to be located under the sealing part to provide a path through which the foreign material is introduced, and the foreign material It is characterized in that it includes a foreign material discharge path portion extending from the end of the inflow path portion to the side of the lower housing and providing a path through which the foreign material is discharged to the outside.
  • an integrated supply/discharge port providing a discharge path of the mixed fluid is opened or closed.
  • the foreign matter inflow path portion constituting the foreign matter discharge portion has a groove shape corresponding to an edge shape of the lower housing.
  • a plurality of vent holes formed in the vertical direction are formed on the bottom surface of the groove, and the foreign matter discharge path part is in communication with the plurality of vent holes. It features.
  • the sealing part and the foreign matter inflow path part are coupled in a dovetail manner to prevent separation of the sealing part when the chamber is opened by separation of the upper housing and the lower housing. It features.
  • the integrated supply/discharge port is formed to extend from one side to the other side of the lower housing and is formed to face the substrate arrangement plate in an intermediate region between the one side and the other side. It is characterized by being.
  • the integrated supply/discharge port includes a first conduit part formed from one side of the lower housing to the middle region, and the substrate is disposed in communication with the first conduit part in the intermediate region. And a second conduit portion formed to face the plate and communicated with the common port portion and the first conduit in the intermediate region to the other side of the lower housing.
  • the first conduit portion and the common port portion provide a supply path for an initial pressurization supercritical fluid, and the common port portion and the second conduit portion are connected to the drying supercritical fluid. It characterized in that it provides a discharge path of the mixed fluid in which the organic solvent is dissolved.
  • the substrate is disposed on the substrate mounting plate so as to be positioned higher than the bonding surface of the lower housing and the upper housing, and the drying process is completed to open the lower housing and the upper housing.
  • particles around the sealing part provided on the bonding surface are prevented from entering the substrate by gravity according to a height difference between the substrate and the bonding surface.
  • the supercritical fluid for initial pressure supplied through the first conduit portion and the common port portion is blocked by the substrate arrangement plate so that direct injection to the substrate is prevented.
  • one end is coupled to the bottom surface of the lower housing and the other end is coupled to the substrate placement plate, thereby supporting the substrate placement plate while separating the substrate placement plate from the bottom surface of the lower housing. It characterized in that it further comprises a substrate arrangement plate support.
  • the first spaced space existing between the bottom surface of the lower housing and the substrate placement plate by the substrate placement plate support part is for initial pressure supplied through the integrated supply/discharge port. It is characterized in that the supercritical fluid moves along the lower surface of the substrate arrangement plate to gradually diffuse into the processing area in which the substrate is disposed.
  • the substrate drying chamber according to the present invention further includes a substrate support portion having one end coupled to the upper surface of the substrate arrangement plate and the other end coupled to the substrate, supporting the substrate and separating the substrate from the upper surface of the substrate arrangement plate Characterized in that.
  • the second spaced space existing between the upper surface of the substrate arrangement plate and the substrate by the substrate support portion is an initial pressurization supplied to the lower surface of the substrate through the integrated supply/discharge port. It is characterized in that the drying process is shortened by exposing the supercritical fluid for drying and the supercritical fluid for drying supplied through the spray nozzle unit.
  • foreign substances such as particles, such as impregnation in the sealing part or particles existing around the sealing part, are discharged to the outside when the supercritical fluid is finally discharged after the drying process is finished using the foreign material discharge part formed in the lower housing. It is possible to prevent the problem from flowing into the internal substrate.
  • a substrate placement plate that is required for arranging the substrate, it blocks re-inflow particles when the chamber is opened after the drying process is completed, and the initial pressure supercritical fluid flows directly to the substrate surface at the beginning of the drying process. Prevents the collapse of the pattern formed on the substrate, prevents the problem that particles that may be contained in the initial pressurization supercritical fluid accumulate on the substrate or reduces the amount of deposition, and the interior of the chamber due to the volume occupied by the substrate placement plate.
  • the drying process time can be shortened by reducing the working volume.
  • FIG. 1 is a diagram showing a pattern collapse phenomenon occurring in a substrate drying process according to the prior art
  • FIG. 2 is a view showing a conventional substrate drying chamber
  • FIG. 3 is a view showing a substrate drying chamber according to an embodiment of the present invention.
  • FIG. 4 is a view showing an exemplary shape of a foreign matter discharge unit formed in a lower housing in an embodiment of the present invention
  • FIG. 5 is a view showing another exemplary shape of a foreign matter discharge unit formed in a lower housing in an embodiment of the present invention
  • FIG. 6 is a diagram showing a diffusion path of a supercritical fluid for initial pressurization in an embodiment of the present invention
  • FIG. 7 is a diagram showing a diffusion path of a drying supercritical fluid in an embodiment of the present invention.
  • FIG. 8 is a diagram showing a discharge path of a mixed fluid in which an organic solvent is dissolved in a drying supercritical fluid in an embodiment of the present invention
  • first or second may be used to describe various elements, but the elements should not be limited by the terms. The terms are only for the purpose of distinguishing one component from other components, for example, without departing from the scope of the rights according to the concept of the present invention, the first component may be named as the second component and similarly the second component. The component may also be referred to as a first component.
  • FIG. 3 is a view showing a substrate drying chamber according to an embodiment of the present invention
  • FIG. 4 is a view showing an exemplary shape of a foreign material discharge unit formed in a lower housing in an embodiment of the present invention
  • 5 is a view showing another exemplary shape of a foreign matter discharge unit formed in a lower housing in an embodiment of the present invention
  • FIG. 6 is a view showing a diffusion path of the initial pressurization supercritical fluid in an embodiment of the present invention.
  • 7 is a view showing the diffusion path of the supercritical fluid for drying in an embodiment of the present invention
  • FIG. 8 is a view showing the dissolution of an organic solvent in the supercritical fluid for drying in an embodiment of the present invention.
  • 9 is a diagram showing the discharge path of the mixed fluid, and FIG.
  • FIG. 9 is a diagram showing a sealing part provided on the bonding surface of the upper housing and the lower housing and particles present around the sealing part when the drying process is completed in an embodiment of the present invention It is a diagram for explaining the principle of preventing the inflow of the into the substrate.
  • a substrate drying chamber 1 includes an upper housing 10, a lower housing 20, a sealing unit 30, a substrate placement plate 40, and an integral type. It includes a supply/discharge port 50, an upper supply port 60, a substrate arrangement plate support part 70, a substrate support part 80, a housing driving part 90, and a foreign matter discharge part 100.
  • the upper housing 10 and the lower housing 20 are coupled to each other so as to be able to open and close, and provide a space in which a drying process is performed.
  • the upper housing 10 and the lower housing 20 may be configured to have a cylindrical shape, but are not limited thereto.
  • an upper supply port 60 is formed in the upper housing 10
  • an integrated supply/discharge port 50 and a foreign matter discharge part 100 are formed in the lower housing 20.
  • the sealing part 30 is provided on the coupling surface between the lower housing 20 and the upper housing 10, and maintains the airtightness of the coupling surface between the lower housing 20 and the upper housing 10 to prevent the inner region of the chamber from the outside. Block it.
  • the sealing part 30 may have a polymer material, but is not limited thereto.
  • the foreign material discharge unit 100 is formed in the lower housing 20, and when the drying process is completed, impregnation in the sealing unit 30 during the drying process or foreign substances existing around the sealing unit 30 are introduced. Provides a route to the outside.
  • the supercritical fluid for initial pressurization through the first conduit part 510 and the common port part 520 constituting the integrated supply/discharge port 50 is supplied during the set initial pressurization time, and then, the initial pressurization time After this elapses, the supply of the initial pressure supercritical fluid is cut off, and the drying supercritical fluid is supplied through the upper supply port 60 during the drying time, and then, after the drying time has elapsed, the supercritical fluid for drying is The supply is cut off and the mixed fluid is discharged during the discharge time through the common port part 520 and the second conduit part 530 constituting the integrated supply/discharge port 50.
  • the supply of the supercritical fluid for drying and the discharge of the mixed fluid may be repeated a set number of times, that is, flushed.
  • the supercritical fluid inside the chamber more specifically, the supercritical fluid and the organic solvent dissolved in the supercritical fluid, are impregnated into the space between the polymer chains constituting the sealing part 30.
  • An embodiment of the present invention is to prevent such a problem, and when the drying process is completed, the sealing part 30 provided on the bonding surface of the upper housing 10 and the lower housing 20 and the Referring to FIG. 9 for explaining the principle that particles are prevented from entering the substrate W, the sealing part 30 is impregnated using the foreign material discharge part 100 formed in the lower housing 20 Contamination of the substrate W can be prevented by providing a path through which foreign substances such as particles existing around the sealing unit 30 are introduced and discharged to the outside.
  • the foreign material discharge part 100 formed in the lower housing 20 may include a foreign material inflow path part 110 and a foreign material discharge path part 120.
  • the foreign matter inflow path part 110 is formed in the vertical direction along the edge of the lower housing 20 so as to be located under the sealing part 30 and is impregnated in the sealing part 30 or around the sealing part 30 Provides a path for foreign substances present in
  • the foreign matter discharge path part 120 extends from the lower end of the foreign matter inflow path part 110 to the side of the lower housing 20 and provides a path through which foreign matter is discharged to the outside.
  • a pipe for discharging foreign substances to the outside may be connected to an end of the foreign substance discharge path part 120, and a valve for controlling the opening and closing of the pipe may be provided.
  • the foreign material introduction path part 110 may be configured to have a groove shape corresponding to an edge shape of the lower housing 20.
  • at least one foreign material discharge path part 120 and 121 extending from the lower end of the foreign material inflow path part 110 to the side of the lower housing 20 may be provided.
  • the foreign matter inflow path part 110 constituting the sealing part 30 and the foreign matter discharging part 100 is coupled in a dovetail method to separate the upper housing 10 and the lower housing 20.
  • the chamber When the chamber is opened, it may be configured to prevent separation of the sealing unit 30.
  • a plurality of vent holes 130 formed in the vertical direction are formed on the bottom surface of the groove constituting the foreign matter inflow path part 110 illustrated in FIG. 4.
  • the foreign matter discharge path parts 120 and 121 may be configured to communicate with the plurality of vent holes 130.
  • communication means that the plurality of vent holes 130 and the foreign matter discharge path portions 120 and 121 are connected to each other to communicate with each other.
  • the substrate W may be positioned higher than the bonding surface of the lower housing 20 and the upper housing 10.
  • the substrate (W) may be configured to prevent inflow into the substrate W by gravity according to a height difference between the mating surface and the mating surface.
  • the substrate arrangement plate 40 is a component on which the substrate W is bonded to the bottom surface 22 of the lower housing 20 and is formed in a wet state of an organic solvent.
  • the initial pressure supercritical fluid supplied through the first conduit portion 510 and the common port portion 520 constituting the integrated supply/discharge port 50 is blocked by the substrate mounting plate 40 and thus the substrate ( It can be configured to prevent direct injection to W).
  • the substrate For initial pressurization directed to the surface of the substrate (W) at the beginning of the drying process by blocking re-inflow particles when the chamber is opened after the drying process is completed by using the substrate placement plate (40) required to arrange W)
  • the substrate placement plate (40) required to arrange W
  • the drying process time can be shortened by reducing the working volume of the chamber due to the volume occupied by the substrate arrangement plate 40.
  • the integrated supply/discharge port 50 is formed extending from one side 24 to the other side 26 of the lower housing 20, and the substrate is arranged in the intermediate region 28 between one side 24 and the other side 26. It is formed to face the plate 40, and provides a supply path of the supercritical fluid for initial pressurization and a discharge path of the supercritical fluid in which the organic solvent formed on the substrate W after drying is dissolved.
  • the supercritical fluid is When supplying and discharging, a symmetrical flow is induced and the supercritical fluid is uniformly distributed in the chamber to supply and discharge, thereby increasing substrate drying efficiency.
  • such an integrated supply/discharge port 50 has a first conduit portion 510 formed from one side 24 of the lower housing 20 to the middle region 28, and the first conduit portion 510 in the middle region 28.
  • the lower housing is in communication with the conduit part 510 and is in communication with the common port part 520 and the first conduit part 510 in the common port part 520 and the intermediate region 28 formed to face the substrate mounting plate 40.
  • It includes a second conduit part 530 formed up to the other side 26 of 20, and the first conduit part 510 and the common port part 520 provide a supply path of the supercritical fluid for initial pressurization,
  • the common port part 520 and the second conduit part 530 may be configured to provide a discharge path for the supercritical fluid in which the organic solvent is dissolved.
  • the upper supply port 60 is a component formed to face the substrate mounting plate 40 in the central region of the upper housing 10 to provide a supply path of the supercritical fluid for drying.
  • the substrate placement plate support part 70 has one end coupled to the bottom surface 22 of the lower housing 20 and the other end coupled to the substrate placement plate 40, and supports the substrate placement plate 40 while supporting the substrate placement plate ( It is a component that separates 40) from the bottom surface 22 of the lower housing 20.
  • the first spaced space R1 existing between the bottom surface 22 of the lower housing 20 and the substrate placement plate 40 by the substrate placement plate support part 70 is an integral supply/discharge port 50
  • the supercritical fluid for initial pressure supplied through may move along the lower surface of the substrate placement plate 40 to gradually diffuse into the processing area where the substrate W is disposed.
  • the substrate support 80 has one end coupled to the upper surface of the substrate placement plate 40 and the other end coupled to the substrate W. While supporting the substrate W, the substrate W is attached to the upper surface of the substrate placement plate 40. It is a component that separates from
  • the second separation space R2 existing between the upper surface of the substrate mounting plate 40 and the substrate W by the substrate support 80 provides the lower surface of the substrate W as the integrated supply/discharge port ( It performs a function of shortening the drying process time by exposure to the initial pressure supercritical fluid supplied through 50) and the drying supercritical fluid supplied through the upper supply port 60.
  • the housing driving unit 90 is a means for opening and closing the housing, and after the drying process is completed, the lower housing 20 is driven to separate the lower housing 20 from the upper housing 10 to open the chamber or initiate the drying process. In this case, the lower housing 20 may be driven to couple the lower housing 20 to the upper housing 10 to close the chamber.
  • the housing driving unit 90 is expressed as driving the lower housing 20, but this is only an example, and the housing driving unit 90 may be configured to drive the upper housing 10.
  • the supercritical fluid for initial pressurization and the supercritical fluid for drying may include carbon dioxide (CO 2 ), and the organic solvent may include alcohol, but is not limited thereto.
  • the alcohol may include methanol, ethanol, 1-propanol, 2-propanol, IPA, and 1-butanol. It is not limited.
  • carbon dioxide in a supercritical state is applied to the substrate W whose surface is moistened with an organic solvent such as alcohol in the chamber.
  • an organic solvent such as alcohol in the chamber.
  • the alcohol on the wafer is dissolved in the supercritical carbon dioxide fluid.
  • the substrate W can be dried without collapse of the pattern.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Solid Materials (AREA)

Abstract

La présente invention concerne une chambre de séchage de substrat. La présente invention comprend : un boîtier supérieur ; un boîtier inférieur ; une partie d'étanchéité disposée sur des surfaces de couplage du boîtier inférieur et du boîtier supérieur ; une plaque d'agencement de substrat qui est couplée à la surface inférieure du boîtier inférieur, et sur laquelle un substrat ayant un motif mouillé avec un solvant organique est disposé ; un port d'alimentation supérieur formé pour faire face à la plaque d'agencement de substrat dans la région centrale du boîtier supérieur de façon à fournir un trajet d'alimentation d'un fluide supercritique pour le séchage ; un port d'alimentation/évacuation intégré qui est formé dans le boîtier inférieur, et qui fournit un trajet d'alimentation d'un fluide supercritique pour un pressage initial et un trajet d'évacuation d'un fluide de mélange dans lequel un solvant organique est dissous dans le fluide supercritique pour le séchage, après avoir effectué le séchage selon l'alimentation du fluide supercritique pour le séchage ; et une unité d'évacuation de substance étrangère qui est formée dans le boîtier inférieur, et qui fournit un trajet à travers lequel des substances étrangères imprégnées dans la partie d'étanchéité ou existant autour de la partie d'étanchéité sont introduites et évacuées vers l'extérieur.
PCT/KR2020/000161 2019-02-26 2020-01-06 Chambre de séchage de substrat WO2020175788A1 (fr)

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KR10-2019-0022391 2019-02-26
KR1020190022391A KR102178594B1 (ko) 2019-02-26 2019-02-26 기판 건조 챔버

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KR20140112638A (ko) * 2013-03-12 2014-09-24 삼성전자주식회사 초임계 유체를 이용하는 기판 처리 장치, 이를 포함하는 기판 처리 시스템, 및 기판 처리 방법
KR20170106792A (ko) * 2016-03-14 2017-09-22 세메스 주식회사 기판 처리 장치 및 방법
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JP2009144735A (ja) * 2007-12-11 2009-07-02 Nok Corp 密封構造
KR20110058037A (ko) * 2009-11-25 2011-06-01 세메스 주식회사 기판 건조 장치 및 그의 기판 건조 방법
KR20140112638A (ko) * 2013-03-12 2014-09-24 삼성전자주식회사 초임계 유체를 이용하는 기판 처리 장치, 이를 포함하는 기판 처리 시스템, 및 기판 처리 방법
KR20170106792A (ko) * 2016-03-14 2017-09-22 세메스 주식회사 기판 처리 장치 및 방법
KR20180125763A (ko) * 2017-05-16 2018-11-26 주식회사 케이씨텍 기판 처리용 챔버

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KR102178594B1 (ko) 2020-11-18
TW202040074A (zh) 2020-11-01
KR20200104454A (ko) 2020-09-04

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