WO2020159091A1 - Chambre de séchage de substrat - Google Patents

Chambre de séchage de substrat Download PDF

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Publication number
WO2020159091A1
WO2020159091A1 PCT/KR2020/000158 KR2020000158W WO2020159091A1 WO 2020159091 A1 WO2020159091 A1 WO 2020159091A1 KR 2020000158 W KR2020000158 W KR 2020000158W WO 2020159091 A1 WO2020159091 A1 WO 2020159091A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
supercritical fluid
drying
placement plate
lower housing
Prior art date
Application number
PCT/KR2020/000158
Other languages
English (en)
Korean (ko)
Inventor
신희용
윤병문
Original Assignee
무진전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 무진전자 주식회사 filed Critical 무진전자 주식회사
Publication of WO2020159091A1 publication Critical patent/WO2020159091A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

Definitions

  • Figure 2 shows a substrate processing chamber disclosed in Republic of Korea Patent Publication No. 10-2017-0137243, which is a prior art related to a substrate processing apparatus using a supercritical fluid.
  • the heating member is operated for an initial pressing time during which the initial pressurized supercritical fluid is supplied, and the temperature of the initial pressurized supercritical fluid is adjusted to be above a critical point. Is done.
  • one end is coupled to the bottom surface of the lower housing and the other end is coupled to the substrate placement plate, and the substrate placement plate is spaced apart from the bottom surface of the lower housing while supporting the substrate placement plate. It characterized in that it further comprises a substrate placement plate support.
  • FIG. 6 is a view showing a discharge path of a supercritical fluid in which an organic solvent is dissolved in an embodiment of the present invention
  • the heating member 45 may be implemented in the form of an electric resistance heating element, or an oil-filled heater formed in the substrate placement plate 40, but the implementation form of the heating member 45 is It is not limited to this.
  • An embodiment of the present invention solves this problem through a heating member 45 installed on the substrate placement plate 40. That is, when the initial pressurization, particularly when the initial pressurization proceeds rapidly through the heating member 45 installed on the substrate placement plate 40 in the chamber, the phase change of the supercritical fluid for initial pressurization in the substrate drying chamber 1 is minimized to minimize the substrate ( It is possible to prevent particulate contamination of W) and to improve the process speed by facilitating formation or maintenance of a supercritical fluid.
  • the heating member 45 operates during the discharge time when the mixed fluid is discharged, thereby compensating for the temperature drop caused by the adiabatic expansion due to the pressure drop generated in the discharge process of the mixed fluid, thereby mixing the fluid. It can be adjusted so that the temperature of the drying supercritical fluid contained in the critical point or more.
  • the substrate placement plate support portion 70 has one end coupled to the bottom surface 22 of the lower housing 20 and the other end coupled to the substrate placement plate 40, while supporting the substrate placement plate 40 while supporting the substrate placement plate 40 ( 40) is a component that is spaced from the bottom surface 22 of the lower housing 20.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Solid Materials (AREA)

Abstract

La présente invention concerne une chambre de séchage de substrat. La présente invention comprend : une coque supérieure ; une coque inférieure accouplée à la coque supérieure d'une manière pouvant être ouverte et fermée ; une partie d'étanchéité disposée sur les surfaces d'accouplement de la coque inférieure et de la coque supérieure ; une plaque de placement de substrat qui est accouplée à la surface inférieure de la coque inférieure et sur laquelle est placé un substrat sur lequel est formé un solvant organique ; un orifice d'alimentation supérieur qui est formé dans la région centrale de la coque supérieure de façon à faire face à la plaque de placement de substrat, et fournit un trajet d'alimentation pour un fluide supercritique servant au séchage ; un orifice d'alimentation/évacuation intégré qui fournit un trajet d'alimentation pour un fluide supercritique servant à la mise sous pression initiale, et un trajet d'évacuation pour un fluide mélangé obtenu par dissolution du solvant organique dans le fluide supercritique servant au séchage après qu'un séchage a été effectué par apport du fluide supercritique servant au séchage ; et un élément chauffant qui est monté sur la plaque de placement de substrat et qui fonctionne lorsque le fluide supercritique servant à la mise sous pression initiale est fourni et le fluide mélangé est évacué, ce qui permet de chauffer le fluide supercritique servant à la mise sous pression initiale et le fluide mélangé.
PCT/KR2020/000158 2019-01-31 2020-01-06 Chambre de séchage de substrat WO2020159091A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020190013035A KR102161037B1 (ko) 2019-01-31 2019-01-31 기판 건조 챔버
KR10-2019-0013035 2019-01-31

Publications (1)

Publication Number Publication Date
WO2020159091A1 true WO2020159091A1 (fr) 2020-08-06

Family

ID=71842183

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2020/000158 WO2020159091A1 (fr) 2019-01-31 2020-01-06 Chambre de séchage de substrat

Country Status (3)

Country Link
KR (1) KR102161037B1 (fr)
TW (1) TWI738184B (fr)
WO (1) WO2020159091A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114234569A (zh) * 2020-09-09 2022-03-25 无尽电子有限公司 基板干燥装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102398794B1 (ko) * 2020-08-20 2022-05-18 무진전자 주식회사 기판 건조 챔버
KR102345971B1 (ko) * 2020-09-04 2022-01-03 무진전자 주식회사 기판 건조 챔버

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004146457A (ja) * 2002-10-22 2004-05-20 Kobe Steel Ltd 高圧処理方法および高圧処理装置
KR20110058037A (ko) * 2009-11-25 2011-06-01 세메스 주식회사 기판 건조 장치 및 그의 기판 건조 방법
KR20140112638A (ko) * 2013-03-12 2014-09-24 삼성전자주식회사 초임계 유체를 이용하는 기판 처리 장치, 이를 포함하는 기판 처리 시스템, 및 기판 처리 방법
KR20180125763A (ko) * 2017-05-16 2018-11-26 주식회사 케이씨텍 기판 처리용 챔버
KR20190000529A (ko) * 2017-06-23 2019-01-03 주식회사 케이씨텍 기판처리장치 및 기판처리방법

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JP4372590B2 (ja) 2004-03-26 2009-11-25 株式会社日立ハイテクノロジーズ 微細構造乾燥処理方法及びその装置
KR100822373B1 (ko) * 2006-09-12 2008-04-17 세메스 주식회사 초임계 유체를 이용한 기판 건조 장치, 이를 구비한 기판처리 설비 및 기판 처리 방법
US7967960B2 (en) * 2007-11-06 2011-06-28 United Microelectronics Corp. Fluid-confining apparatus
KR101187375B1 (ko) * 2011-01-27 2012-10-05 부경대학교 산학협력단 반도체 기판의 실리콘 산화막의 식각방법
KR101874901B1 (ko) * 2011-12-07 2018-07-06 삼성전자주식회사 기판 건조 장치 및 방법
KR102063322B1 (ko) * 2016-05-27 2020-01-08 세메스 주식회사 기판 처리 장치 및 방법
KR101856606B1 (ko) 2016-06-02 2018-05-15 세메스 주식회사 기판 처리 장치 및 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004146457A (ja) * 2002-10-22 2004-05-20 Kobe Steel Ltd 高圧処理方法および高圧処理装置
KR20110058037A (ko) * 2009-11-25 2011-06-01 세메스 주식회사 기판 건조 장치 및 그의 기판 건조 방법
KR20140112638A (ko) * 2013-03-12 2014-09-24 삼성전자주식회사 초임계 유체를 이용하는 기판 처리 장치, 이를 포함하는 기판 처리 시스템, 및 기판 처리 방법
KR20180125763A (ko) * 2017-05-16 2018-11-26 주식회사 케이씨텍 기판 처리용 챔버
KR20190000529A (ko) * 2017-06-23 2019-01-03 주식회사 케이씨텍 기판처리장치 및 기판처리방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114234569A (zh) * 2020-09-09 2022-03-25 无尽电子有限公司 基板干燥装置

Also Published As

Publication number Publication date
KR102161037B1 (ko) 2020-10-05
TW202040631A (zh) 2020-11-01
KR20200095218A (ko) 2020-08-10
TWI738184B (zh) 2021-09-01

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