WO2020197082A1 - Chambre de séchage de substrat - Google Patents

Chambre de séchage de substrat Download PDF

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Publication number
WO2020197082A1
WO2020197082A1 PCT/KR2020/001767 KR2020001767W WO2020197082A1 WO 2020197082 A1 WO2020197082 A1 WO 2020197082A1 KR 2020001767 W KR2020001767 W KR 2020001767W WO 2020197082 A1 WO2020197082 A1 WO 2020197082A1
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WO
WIPO (PCT)
Prior art keywords
substrate
drying
supercritical fluid
supply
lower housing
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PCT/KR2020/001767
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English (en)
Korean (ko)
Inventor
신희용
윤병문
Original Assignee
무진전자 주식회사
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Publication of WO2020197082A1 publication Critical patent/WO2020197082A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Definitions

  • the present invention relates to a substrate drying chamber. More specifically, the present invention is after the completion of the flushing process in which the supply of the supercritical fluid for drying and the discharge of the mixed fluid in which the organic solvent is dissolved in the drying supercritical fluid is repeated, when the mixed fluid is discharged (reduced pressure), It prevents the mixed fluid from causing particulate contamination on the substrate due to phase separation, and induces a symmetrical flow when supplying and discharging the supercritical fluid, thereby distributing the supercritical fluid uniformly inside the chamber to supply and discharge it.
  • the present invention relates to a substrate drying chamber capable of increasing substrate drying efficiency and preventing a problem in which particles are introduced to a substrate inside the chamber when the chamber is opened after the drying process is completed.
  • the semiconductor device manufacturing process includes various processes such as a lithography process, an etching process, and an ion implantation process, and after each process is completed, the surface of the wafer is removed by removing impurities or residues remaining on the wafer surface before proceeding to the next process.
  • a cleaning process and a drying process are being performed for cleaning.
  • a chemical liquid for cleaning treatment is supplied to the surface of the wafer, and then deionized water (DIW) is supplied to perform a rinse treatment.
  • DIW deionized water
  • a drying treatment of drying the wafer by removing deionized water remaining on the wafer surface is performed.
  • IPA isopropyl alcohol
  • IPA on the wafer is dissolved in the supercritical carbon dioxide (CO 2 ) fluid by supplying carbon dioxide in a supercritical state to a wafer whose surface is moistened with isopropyl alcohol (IPA) in the chamber. And by gradually discharging the supercritical carbon dioxide (CO 2 ) fluid dissolving IPA from the chamber, the wafer can be dried without collapse of the pattern.
  • CO 2 supercritical carbon dioxide
  • FIG. 2 shows a chamber for processing a substrate disclosed in Korean Patent Laid-Open Publication No. 10-2017-0137243, which is a prior art related to a substrate processing apparatus using such a supercritical fluid.
  • the organic solvent may flow into the bonding surface of the upper body 430 and the lower body 420 constituting the high-pressure chamber 410. .
  • the organic solvent introduced into the bonding surface between the upper body 430 and the lower body 420 becomes particles and accumulates around it.
  • the chamber is opened to transport the processed substrate to the outside. At this time, particles around the bonding surface of the upper body 430 and the lower body 420 due to the pressure difference between the inside and the outside of the chamber It can be introduced into this chamber.
  • a lower supply port 422 for supplying a supercritical fluid for initial pressure, and an exhaust port for exhausting the supercritical fluid after drying Since 426 is not located in the center of the lower body 420, it is difficult to supply and discharge the supercritical fluid by evenly distributing the supercritical fluid inside the chamber by forming an asymmetric flow when supplying and discharging the fluid, thereby reducing drying efficiency. A problem occurs.
  • the mixed fluid is discharged from the chamber after the flushing process is completed in which the supply of the drying supercritical fluid and the discharge of the mixed fluid in which the organic solvent is dissolved in the drying supercritical fluid are repeated ( At reduced pressure), if the mixed fluid is phase separated, particulate contamination may be caused on the substrate. Specifically, when the temperature and pressure drop below the critical point due to rapid adiabatic expansion in the high pressure region above the critical point, the mixed fluid forming the single phase is phase separated, resulting in poor drying on the substrate. Pollution, etc.).
  • Patent Document 0001 Republic of Korea Patent Publication No. 10-2017-0137243 (published date: December 13, 2017, name: substrate processing apparatus and method)
  • the technical problem of the present invention is, after completion of the flushing process in which the supply of the supercritical fluid for drying and the discharge of the mixed fluid in which the organic solvent is dissolved in the drying supercritical fluid is repeated, when the mixed fluid is discharged (depressurized), mixing This is to prevent the fluid from causing phase separation and particulate contamination on the substrate.
  • the technical problem of the present invention is to provide a supply path of the supercritical fluid for initial pressurization and a discharge path of the supercritical fluid in which the organic solvent formed on the substrate after drying is dissolved through one integrated supply/discharge port, thereby providing a supercritical fluid.
  • a supply path of the supercritical fluid for initial pressurization and a discharge path of the supercritical fluid in which the organic solvent formed on the substrate after drying is dissolved through one integrated supply/discharge port, thereby providing a supercritical fluid.
  • the technical problem of the present invention is to block re-inflow particles when the chamber is opened after the drying process is completed by using a substrate placement plate that is required for arranging a substrate, and initial pressure directed directly to the substrate surface at the beginning of the drying process. It prevents the collapse of the pattern formed on the substrate by preventing the flow of the supercritical fluid for use, and prevents the problem that particles that may be contained in the supercritical fluid for initial pressurization are deposited on the substrate or reduces the amount of deposition, and The drying process time is shortened by reducing the working volume of the chamber due to the volume.
  • the technical problem of the present invention is to arrange the substrate on the substrate placement plate so as to be positioned higher than the bonding surface between the lower housing and the upper housing, so that when the drying process is completed and the chamber is opened, Particles around the sealed part are prevented from flowing into the substrate by gravity due to the height difference between the substrate and the bonding surface.
  • the substrate drying chamber according to the present invention for solving this technical problem includes an upper housing, a lower housing coupled to the upper housing so as to be openable and closed, a sealing part provided on a coupling surface between the lower housing and the upper housing, and the lower housing.
  • a substrate placement plate that is bonded to the bottom surface of and on which a substrate on which an organic solvent is formed is placed, and is formed to face the substrate placement plate in the central region of the upper housing to provide a supply path of the supercritical fluid for drying.
  • an integrated supply/discharge port that provides a supply path of the initial pressurization supercritical fluid and a discharge path of the mixed fluid in which the organic solvent is dissolved in the drying supercritical fluid after drying according to the supply of the drying supercritical fluid
  • a check valve coupled to an end of the upper supply port to prevent the mixed fluid from flowing back to the upper supply port.
  • a flushing process in which the supply of the supercritical fluid for drying through the upper supply port and discharge of the mixed fluid through the integrated supply/discharge port is repeatedly performed,
  • the check valve when the mixed fluid is flown back to the upper supply port during the flushing process and remains, and after the flushing process is completed, when the mixed fluid is discharged, the mixed fluid is phase separated to the substrate. It is characterized in that it prevents causing particulate contamination.
  • the integrated supply/discharge port is formed to extend from one side to the other side of the lower housing and is formed to face the substrate arrangement plate in an intermediate region between the one side and the other side. It is characterized by being.
  • the integrated supply/discharge port includes a first conduit part formed from one side of the lower housing to the middle region, and the substrate is disposed in communication with the first conduit part in the intermediate region. And a second conduit portion formed to face the plate and communicated with the common port portion and the first conduit in the intermediate region to the other side of the lower housing.
  • the first pipe part and the common port part provide a supply path of the supercritical fluid for initial pressure
  • the common port part and the second pipe part It is characterized in that it provides a discharge path of the critical fluid
  • the substrate is disposed on the substrate mounting plate so as to be positioned higher than the bonding surface of the lower housing and the upper housing, and the drying process is completed to open the lower housing and the upper housing.
  • particles around the sealing part provided on the bonding surface are prevented from entering the substrate by gravity according to a height difference between the substrate and the bonding surface.
  • the supercritical fluid for initial pressure supplied through the first conduit portion and the common port portion is blocked by the substrate arrangement plate so that direct injection to the substrate is prevented.
  • one end is coupled to the bottom surface of the lower housing and the other end is coupled to the substrate placement plate, thereby supporting the substrate placement plate while separating the substrate placement plate from the bottom surface of the lower housing. It characterized in that it further comprises a substrate arrangement plate support.
  • the first spaced space existing between the bottom surface of the lower housing and the substrate placement plate by the substrate placement plate support part is for initial pressure supplied through the integrated supply/discharge port. It is characterized in that the supercritical fluid moves along the lower surface of the substrate arrangement plate to gradually diffuse into the processing area in which the substrate is disposed.
  • the substrate drying chamber according to the present invention further includes a substrate support portion having one end coupled to the upper surface of the substrate arrangement plate and the other end coupled to the substrate, supporting the substrate and separating the substrate from the upper surface of the substrate arrangement plate Characterized in that.
  • the second separation space existing between the upper surface of the substrate arrangement plate and the substrate by the substrate support portion is an initial pressurization supplied to the lower surface of the substrate through the integrated supply/discharge port. It is characterized in that the drying process is shortened by exposure to the supercritical fluid for drying and the supercritical fluid for drying supplied through the upper supply port.
  • the mixed fluid Phase separation can be used to avoid causing particulate contamination on the substrate.
  • the supply path of the supercritical fluid for initial pressurization and the discharge path of the supercritical fluid in which the organic solvent formed on the substrate after drying is dissolved is symmetrical when supplying and discharging the supercritical fluid.
  • the supercritical fluid is uniformly distributed and supplied and discharged in the chamber by inducing a natural flow, thereby increasing substrate drying efficiency.
  • a substrate placement plate that is required for arranging the substrate, it blocks re-inflow particles when the chamber is opened after the drying process is completed, and the initial pressure supercritical fluid flows directly to the substrate surface at the beginning of the drying process. It is possible to prevent the collapse of the pattern formed on the substrate, prevent the problem that particles that may be contained in the initial pressurization supercritical fluid are deposited on the substrate, or reduce the amount of deposition, and reduce the amount of deposition. Due to the reduced working volume of the chamber there is an effect of shortening the drying process time.
  • FIG. 1 is a diagram showing a pattern collapse phenomenon occurring in a substrate drying process according to the prior art
  • FIG. 2 is a view showing a conventional substrate drying chamber
  • FIG. 3 is a view showing a substrate drying chamber according to an embodiment of the present invention.
  • FIG. 4 is a diagram showing a diffusion path of a supercritical fluid for initial pressurization in an embodiment of the present invention
  • FIG. 5 is a diagram showing a diffusion path of a drying supercritical fluid in an embodiment of the present invention
  • FIG. 6 is a view showing a discharge path of a mixed fluid in which an organic solvent is dissolved in an embodiment of the present invention
  • FIG. 7 is a diagram illustrating a sealing portion provided on a bonding surface between the upper housing and the lower housing and a substrate of particles existing therearound when the drying process is completed and the lower housing and the upper housing are opened, according to an embodiment of the present invention. It is a diagram for explaining the principle of preventing the inflow of.
  • first or second may be used to describe various elements, but the elements should not be limited by the terms. The terms are only for the purpose of distinguishing one component from other components, for example, without departing from the scope of the rights according to the concept of the present invention, the first component may be named as the second component and similarly the second component. The component may also be referred to as a first component.
  • FIG. 3 is a view showing a substrate drying chamber according to an embodiment of the present invention
  • Figure 4 is a view showing a diffusion path of the initial pressure supercritical fluid in an embodiment of the present invention
  • Figure 5 is the present invention
  • FIG. 6 is a view showing a diffusion path of a supercritical fluid for drying
  • FIG. 6 is a view showing a discharge path of a mixed fluid in which an organic solvent is dissolved
  • FIG. 7 is In an embodiment of the present invention, when the drying process is completed and the lower housing and the upper housing are opened, the sealing portion provided on the bonding surface of the upper housing and the lower housing and particles existing around the sealing portion are prevented from entering the substrate. It is a diagram for explaining the principle to be prevented.
  • a substrate drying chamber 1 includes an upper housing 10, a lower housing 20, a sealing unit 30, a substrate mounting plate 40, and an integral type.
  • a supply/discharge port 50, an upper supply port 60, a substrate mounting plate support portion 70, a substrate support portion 80, a housing driving portion 90, and a check valve 200 are included.
  • the upper housing 10 and the lower housing 20 are coupled to each other so as to be able to open and close, and provide a space in which a drying process is performed.
  • the upper housing 10 and the lower housing 20 may be configured to have a cylindrical shape, but are not limited thereto.
  • an upper supply port 60 is formed in the upper housing 10
  • an integrated supply/discharge port 50 is formed in the lower housing 20.
  • a check valve 200 is coupled to the end of the upper supply port 60.
  • the sealing part 30 is provided on the coupling surface (C) of the lower housing 20 and the upper housing 10, and maintains the airtightness of the coupling surface (C) between the lower housing 20 and the upper housing 10. Block the inner area of the chamber from the outside.
  • the sealing part 30 provided on the coupling surface C of the upper housing 10 and the lower housing 20
  • the substrate W is a bonding surface of the lower housing 20 and the upper housing 10
  • the sealing part provided on the bonding surface (C) (30)
  • the surrounding particles may be configured to be prevented from entering the substrate W by gravity according to a height difference between the substrate W and the bonding surface C.
  • the substrate arranging plate 40 is a component on which a substrate W on which an organic solvent is formed is attached to the bottom surface 22 of the lower housing 20.
  • the initial pressure supercritical fluid supplied through the first conduit portion 510 and the common port portion 520 constituting the integrated supply/discharge port 50 is blocked by the substrate mounting plate 40 and thus the substrate ( It can be configured to prevent direct injection to W).
  • FIG. 4 showing the diffusion path of the supercritical fluid for initial pressurization
  • FIG. 6 showing the discharge path of the mixed fluid in which the organic solvent is dissolved
  • the integrated supply/discharge port 50 is formed extending from one side 24 to the other side 26 of the lower housing 20, and the substrate is arranged in the intermediate region 28 between one side 24 and the other side 26. It is formed to face the plate 40, and provides a supply path of the supercritical fluid for initial pressurization and a discharge path of the mixed fluid in which the organic solvent formed on the substrate W after drying is dissolved.
  • Supercritical fluid is supplied by providing a supply path of the supercritical fluid for initial pressurization and a discharge path of the mixed fluid in which the organic solvent formed on the substrate W after drying is dissolved through this one integrated supply/discharge port 50 And there is an effect of increasing the substrate drying efficiency by inducing a symmetrical flow during discharge and supplying and discharging the supercritical fluid uniformly inside the chamber.
  • such an integrated supply/discharge port 50 has a first conduit portion 510 formed from one side 24 of the lower housing 20 to the middle region 28, and the first conduit portion 510 in the middle region 28.
  • the lower housing is in communication with the conduit part 510 and is in communication with the common port part 520 and the first conduit part 510 in the common port part 520 and the intermediate region 28 formed to face the substrate mounting plate 40.
  • It includes a second conduit part 530 formed up to the other side 26 of 20, and the first conduit part 510 and the common port part 520 provide a supply path of the supercritical fluid for initial pressurization,
  • the common port part 520 and the second conduit part 530 may be configured to provide a discharge path for the mixed fluid in which the organic solvent is dissolved.
  • the upper supply port 60 is a component formed to face the substrate mounting plate 40 in the central region of the upper housing 10 to provide a supply path of the supercritical fluid for drying.
  • the check valve 200 is coupled to the end of the upper supply port 60 to prevent the mixed fluid from flowing back to the upper supply port 60.
  • check valve 200 a specific function of the check valve 200 will be described in conjunction with a drying process sequence.
  • the initial pressure supercritical fluid is supplied during the set initial pressure time through the first conduit portion 510 and the common port portion 520 constituting the integrated supply/discharge port 50, and 2) After the initial pressurization time has elapsed, the supply of the initial pressurization supercritical fluid is cut off, and the drying supercritical fluid is supplied through the upper supply port 60 for the drying time, and 3) the drying supercritical fluid is after the drying time.
  • the supply of the fluid is blocked and the mixed fluid may be discharged during the discharge time through the common port part 520 and the second conduit part 530 constituting the integrated supply/discharge port 50.
  • the supply of the supercritical fluid for drying and the discharge of the mixed fluid may be repeated a set number of times, that is, flushed.
  • the mixed fluid is discharged from the chamber after the flushing process is completed in which the supply of the drying supercritical fluid and the discharge of the mixed fluid in which the organic solvent is dissolved in the drying supercritical fluid are repeated.
  • particulate contamination may be caused on the substrate W.
  • the mixed fluid forming the single phase is phase separated, resulting in poor drying on the substrate. Pollution, etc.).
  • the check valve 200 coupled to the upper supply port 60 is a component for solving this problem, and the check valve 200 remains after the mixed fluid flows back to the upper supply port 60 during the flushing process, When the mixed fluid is finally discharged after the flushing process is completed, the mixed fluid is phase separated in the discharge process to prevent particulate contamination on the substrate W.
  • the substrate placement plate support part 70 has one end coupled to the bottom surface 22 of the lower housing 20 and the other end coupled to the substrate placement plate 40, and supports the substrate placement plate 40 while supporting the substrate placement plate ( It is a component that separates 40) from the bottom surface 22 of the lower housing 20.
  • the first spaced space R1 existing between the bottom surface 22 of the lower housing 20 and the substrate placement plate 40 by the substrate placement plate support part 70 is an integral supply/discharge port 50
  • the supercritical fluid for initial pressure supplied through may move along the lower surface of the substrate placement plate 40 to gradually diffuse into the processing area where the substrate W is disposed.
  • the substrate support 80 has one end coupled to the upper surface of the substrate placement plate 40 and the other end coupled to the substrate W. While supporting the substrate W, the substrate W is attached to the upper surface of the substrate placement plate 40. It is a component that separates from
  • the second separation space R2 existing between the upper surface of the substrate mounting plate 40 and the substrate W by the substrate support 80 provides the lower surface of the substrate W as the integrated supply/discharge port ( It performs a function of shortening the drying process time by exposure to the initial pressure supercritical fluid supplied through 50) and the drying supercritical fluid supplied through the upper supply port 60.
  • the housing driving unit 90 is a means for opening and closing the housing, and after the drying process is completed, the lower housing 20 is driven to separate the lower housing 20 from the upper housing 10 to open the chamber or initiate the drying process. In this case, the lower housing 20 may be driven to couple the lower housing 20 to the upper housing 10 to close the chamber.
  • the housing driving unit 90 is expressed as driving the lower housing 20, but this is only an example, and the housing driving unit 90 may be configured to drive the upper housing 10.
  • the supercritical fluid for initial pressurization and the supercritical fluid for drying may include carbon dioxide (CO 2 ), and the organic solvent may include alcohol, but is not limited thereto.
  • the alcohol may include methanol, ethanol, 1-propanol, 2-propanol, IPA, and 1-butanol. It is not limited.
  • carbon dioxide in a supercritical state is applied to the substrate W whose surface is moistened with an organic solvent such as alcohol in the chamber.
  • an organic solvent such as alcohol in the chamber.
  • the alcohol on the substrate W is dissolved in the supercritical carbon dioxide fluid.
  • the substrate W can be dried without collapse of the pattern.
  • the present invention after completion of the flushing process in which the supply of the drying supercritical fluid and the discharge of the mixed fluid in which the organic solvent is dissolved in the drying supercritical fluid is repeated, discharge of the mixed fluid ( At reduced pressure), it is possible to prevent the mixed fluid from causing particulate contamination to the substrate due to phase separation.
  • the supply path of the supercritical fluid for initial pressurization and the discharge path of the mixed fluid in which the organic solvent formed on the substrate after drying is dissolved through one integrated supply/discharge port, it is symmetrical when supplying and discharging the supercritical fluid.
  • the supercritical fluid is uniformly distributed in the chamber, supplied and discharged, thereby increasing substrate drying efficiency.
  • a substrate placement plate that is required for arranging the substrate, it blocks re-inflow particles when the chamber is opened after the drying process is completed, and the initial pressure supercritical fluid flows directly to the substrate surface at the beginning of the drying process. It is possible to prevent the collapse of the pattern formed on the substrate, prevent the problem that particles that may be contained in the initial pressurization supercritical fluid are deposited on the substrate, or reduce the amount of deposition, and reduce the amount of deposition. Due to the reduced working volume of the chamber there is an effect of shortening the drying process time.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Solid Materials (AREA)

Abstract

La présente invention concerne une chambre de séchage de substrat. La présente invention comprend : un boîtier supérieur ; un boîtier inférieur ; une partie d'étanchéité ; une plaque de positionnement de substrat ; un orifice d'alimentation supérieur fournissant un trajet d'alimentation pour un fluide supercritique pour le séchage ; un orifice d'alimentation/décharge intégré fournissant un trajet d'alimentation pour un fluide supercritique pour une pression initiale et un trajet d'évacuation pour un fluide mélangé dans lequel un solvant organique a été dissous dans le fluide supercritique pour le séchage après séchage conformément à l'alimentation du fluide supercritique pour le séchage ; et un clapet de non-retour relié à l'extrémité de l'orifice d'alimentation supérieur et empêchant le fluide mélangé de s'écouler vers l'arrière vers l'orifice d'alimentation supérieur. La présente invention peut empêcher le fluide mélangé d'être séparé en phase et donner lieu à une contamination particulaire sur le substrat lorsque le fluide mélangé est déchargé (décompressé) après l'achèvement d'un processus de rinçage dans lequel l'alimentation du fluide supercritique pour le séchage et la décharge du fluide mélangé, dans lequel le solvant organique a été dissous dans le fluide supercritique pour le séchage, sont répétées.
PCT/KR2020/001767 2019-03-25 2020-02-07 Chambre de séchage de substrat WO2020197082A1 (fr)

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KR10-2019-0033593 2019-03-25
KR1020190033593A KR102210830B1 (ko) 2019-03-25 2019-03-25 기판 건조 챔버

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WO2020197082A1 true WO2020197082A1 (fr) 2020-10-01

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040035772A (ko) * 2001-09-13 2004-04-29 미셀 테크놀로지즈, 인코포레이티드 구동 수단을 포함하는 압력 챔버 조립체
KR20130063813A (ko) * 2011-12-07 2013-06-17 삼성전자주식회사 기판 건조 장치 및 방법
KR20140043899A (ko) * 2011-05-13 2014-04-11 힐-롬 서비시스 피티이 리미티드 기계적 흡기/호기 기도 개방 장치
US20150135549A1 (en) * 2011-09-05 2015-05-21 Kabushiki Kaisha Toshiba Supercritical drying method for semiconductor substrate
KR20180077949A (ko) * 2016-12-29 2018-07-09 삼성전자주식회사 기판 처리 장치 및 이를 포함한 기판 처리 시스템

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5647845B2 (ja) * 2010-09-29 2015-01-07 株式会社Ｓｃｒｅｅｎホールディングス 基板乾燥装置及び基板乾燥方法
KR101536724B1 (ko) * 2012-05-31 2015-07-16 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR102037844B1 (ko) * 2013-03-12 2019-11-27 삼성전자주식회사 초임계 유체를 이용하는 기판 처리 장치, 이를 포함하는 기판 처리 시스템, 및 기판 처리 방법
JP2015129703A (ja) * 2014-01-08 2015-07-16 富士通株式会社 基板の反り測定方法
KR101856606B1 (ko) 2016-06-02 2018-05-15 세메스 주식회사 기판 처리 장치 및 방법
KR102030056B1 (ko) * 2017-05-02 2019-11-11 세메스 주식회사 챔버 세정 방법, 기판 처리 방법, 그리고 기판 처리 장치
KR102375985B1 (ko) * 2017-05-16 2022-03-21 주식회사 케이씨텍 기판 처리용 챔버

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040035772A (ko) * 2001-09-13 2004-04-29 미셀 테크놀로지즈, 인코포레이티드 구동 수단을 포함하는 압력 챔버 조립체
KR20140043899A (ko) * 2011-05-13 2014-04-11 힐-롬 서비시스 피티이 리미티드 기계적 흡기/호기 기도 개방 장치
US20150135549A1 (en) * 2011-09-05 2015-05-21 Kabushiki Kaisha Toshiba Supercritical drying method for semiconductor substrate
KR20130063813A (ko) * 2011-12-07 2013-06-17 삼성전자주식회사 기판 건조 장치 및 방법
KR20180077949A (ko) * 2016-12-29 2018-07-09 삼성전자주식회사 기판 처리 장치 및 이를 포함한 기판 처리 시스템

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