WO2020186989A1 - 基板及其制作方法、触控显示装置 - Google Patents
基板及其制作方法、触控显示装置 Download PDFInfo
- Publication number
- WO2020186989A1 WO2020186989A1 PCT/CN2020/076942 CN2020076942W WO2020186989A1 WO 2020186989 A1 WO2020186989 A1 WO 2020186989A1 CN 2020076942 W CN2020076942 W CN 2020076942W WO 2020186989 A1 WO2020186989 A1 WO 2020186989A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- conductive pattern
- photoresist
- substrate
- layer
- conductive
- Prior art date
Links
Images
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0412—Digitisers structurally integrated in a display
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/045—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means using resistive elements, e.g. a single continuous surface or two parallel surfaces put in contact
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/40—OLEDs integrated with touch screens
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
Definitions
- the present disclosure relates to the field of touch technology, in particular to a substrate, a manufacturing method thereof, and a touch display device.
- the contact method between the touch electrode and the touch signal line in the touch display product in the related technology is that the touch electrode contacts the surface of the touch electrode line through the through hole penetrating the flat layer.
- the resolution of the touch display product the The higher the pixel density, the larger the pixel density, and the smaller the contact area between the touch electrode and the touch signal line, which makes the contact resistance between the touch electrode and the touch signal line too large, which is likely to cause poor sensing.
- the embodiments of the present disclosure provide a substrate, including a base substrate and a first conductive pattern, an insulating layer, and a second conductive pattern sequentially located on the base substrate, the second conductive pattern passing through the insulating layer
- the via hole is connected to the first conductive pattern, a groove is formed on the surface of the first conductive pattern away from the base substrate, and the second conductive pattern is connected to the bottom and sidewalls of the groove To contact.
- the substrate is a touch substrate
- the first conductive pattern is a touch signal line
- the second conductive pattern is a touch electrode
- first conductive pattern and the source and drain of the thin film transistor of the substrate are provided in the same layer and the same material.
- the first conductive pattern adopts a three-layer structure of Ti/Al/Ti, and the bottom of the groove exposes Ti at the bottom of the first conductive pattern.
- the embodiment of the present disclosure also provides a touch display device, including the substrate as described above.
- the embodiment of the present disclosure also provides a method for manufacturing a substrate, including:
- a second conductive pattern is formed on the insulating layer, and the second conductive pattern is in contact with the bottom and sidewalls of the groove through the via hole.
- the substrate is a touch substrate
- the first conductive pattern is a touch signal line
- the second conductive pattern is a touch electrode
- the forming the first conductive pattern on the base substrate includes:
- the same mask is used to form the first conductive pattern and the source and drain of the thin film transistor of the substrate through a patterning process.
- the formation of the first conductive pattern and the source and drain of the thin film transistor of the substrate by a patterning process using the same mask includes:
- the photoresist fully reserved area corresponds to the source electrode and the drain electrode, and the first thickness of the photoresist partially reserved area is smaller than the second thickness of the photoresist fully reserved area.
- the first conductive pattern adopts a Ti/Al/Ti three-layer structure
- the etching the conductive layer in the partially reserved area of the photoresist includes:
- the first thickness of the partially reserved photoresist area is adjusted so that when the conductive layer in the partially reserved photoresist area is etched, only Ti at the bottom of the first conductive pattern is etched.
- the forming an insulating layer covering the first conductive pattern includes:
- the forming a second conductive pattern on the insulating layer includes:
- the transparent conductive layer is patterned to form the second conductive pattern, and the second conductive pattern is in contact with the bottom and sidewalls of the groove through the via hole penetrating the insulating layer.
- FIG. 1 is a schematic diagram of the structure of a substrate in the related art
- FIG. 2 is a schematic diagram of the structure of a substrate according to an embodiment of the disclosure.
- FIG. 3 is a schematic diagram of an embodiment of the disclosure after a conductive layer is formed
- FIG. 4 is a schematic diagram after exposing the photoresist according to the embodiment of the disclosure.
- FIG. 5 is a schematic diagram after etching the conductive layer according to an embodiment of the disclosure.
- FIG. 1 is a schematic diagram of the structure of a substrate in the related art.
- the touch display substrate in the related art includes: a base substrate 1, a light shielding layer 6 on the base substrate 1, and a buffer covering the light shielding layer 6 Layer 2, the active layer 7 located on the buffer layer 2, the interlayer insulating layer 3 covering the active layer 7, the gate electrode 8 located on the interlayer insulating layer 3, the gate insulating layer 4 covering the gate electrode 8, located on the gate
- touch The control electrode 12 is connected to the touch signal line 11 through a via hole penetrating the planar layer 5.
- the touch electrode 12 and the touch signal line 11 are only in surface contact. As the resolution of touch display products becomes higher and higher, the pixel density becomes larger and larger, the touch electrode 12 and the touch signal The contact area of the wire 11 is also getting smaller and smaller, so that the contact resistance between the touch electrode 12 and the touch signal wire 11 is too large, which is likely to cause poor sensing.
- the embodiments of the present disclosure provide a substrate, a manufacturing method thereof, and a touch display device, which can optimize the electrical performance of the substrate and avoid poor sensing.
- the embodiment of the present disclosure provides a substrate, including a base substrate and a first conductive pattern, an insulating layer, and a second conductive pattern sequentially located on the base substrate, and the second conductive pattern passes through the insulating layer.
- the hole is connected to the first conductive pattern, a groove is formed on the surface of the first conductive pattern away from the base substrate, and the second conductive pattern is in contact with the bottom and sidewalls of the groove .
- a groove is formed on the surface of the first conductive pattern away from the base substrate, and the second conductive pattern is in contact with the bottom and sidewalls of the groove, so that the first conductive pattern and the second conductive pattern can be increased.
- the contact area is reduced, the contact resistance between the first conductive pattern and the second conductive pattern is reduced, the connection between the first conductive pattern and the second conductive pattern in different layers is optimized, the electrical performance of the substrate is ensured, and poor sensing is avoided.
- the aforementioned substrate may be a touch substrate, a display substrate, or a touch display substrate.
- the first conductive pattern and the second conductive pattern may be any two conductive patterns arranged in different layers on the display substrate.
- the first conductive pattern may be the drain of a thin film transistor
- the second conductive pattern may It is the anode of the OLED display substrate, which can optimize the connection between the drain of the thin film transistor and the anode of the OLED display substrate to avoid display failure.
- the first conductive pattern may be a touch signal line
- the second conductive pattern may be a touch electrode, which can optimize the connection between the touch signal line and the touch electrode , To avoid poor sensing.
- the first conductive pattern is a touch signal line
- the first conductive pattern and the source and drain of the thin film transistor of the substrate are arranged in the same layer and the same material, so that the first patterning process can be formed at the same time.
- the conductive pattern and the source and drain of the thin film transistor of the substrate can save the number of patterning processes of the substrate and reduce the production cost of the substrate.
- the first conductive pattern may adopt a three-layer structure of Ti/Al/Ti, wherein the upper and lower layers of Ti can prevent the Al in the middle from being oxidized.
- the grooves The bottom part can expose the Ti at the bottom of the first conductive pattern, so that the second conductive pattern is in contact with the upper layer Ti and the Al in the middle, which can increase the contact area between the first conductive pattern and the second conductive pattern, and reduce the first conductive pattern and
- the contact resistance of the second conductive pattern optimizes the connection condition between the first conductive pattern and the second conductive pattern in different layers.
- the embodiment of the present disclosure also provides a touch display device, including the substrate as described above.
- the touch display device may be any product or component with a display function, such as an LCD TV, a liquid crystal display, a digital photo frame, a mobile phone, a tablet computer, etc., wherein the display device also includes a flexible circuit board, a printed circuit board, and a backplane .
- the embodiment of the present disclosure also provides a method for manufacturing a substrate, including:
- a second conductive pattern is formed on the insulating layer, and the second conductive pattern is in contact with the bottom and sidewalls of the groove through the via hole.
- a groove is formed on the surface of the first conductive pattern away from the base substrate, and the second conductive pattern is in contact with the bottom and sidewalls of the groove, so that the first conductive pattern and the second conductive pattern can be increased.
- the contact area is reduced, the contact resistance between the first conductive pattern and the second conductive pattern is reduced, the connection between the first conductive pattern and the second conductive pattern in different layers is optimized, the electrical performance of the substrate is ensured, and poor sensing is avoided.
- the aforementioned substrate may be a touch substrate, a display substrate, or a touch display substrate.
- the first conductive pattern and the second conductive pattern may be any two conductive patterns arranged in different layers on the display substrate.
- the first conductive pattern may be the drain of a thin film transistor
- the second conductive pattern may It is the anode of the OLED display substrate, which can optimize the connection between the drain of the thin film transistor and the anode of the OLED display substrate to avoid display failure.
- the first conductive pattern may be a touch signal line
- the second conductive pattern may be a touch electrode, which can optimize the connection between the touch signal line and the touch electrode , To avoid poor sensing.
- the first conductive pattern is a touch signal line
- the first conductive pattern and the source and drain of the thin film transistor of the substrate are provided in the same layer and the same material, and the first conductive pattern is formed on the base substrate.
- Conductive patterns include:
- the first conductive pattern, the source electrode and the drain electrode of the thin film transistor of the substrate are formed by one patterning process using the same mask. In this way, the first conductive pattern, the source electrode and the drain electrode of the thin film transistor of the substrate can be simultaneously formed through one patterning process, which can save the number of patterning processes of the substrate and reduce the production cost of the substrate.
- the formation of the first conductive pattern and the source and drain of the thin film transistor of the substrate by a patterning process using the same mask includes:
- the photoresist fully reserved area corresponds to the source electrode and the drain electrode, and the first thickness of the photoresist partially reserved area is smaller than the second thickness of the photoresist fully reserved area.
- the first conductive pattern adopts a Ti/Al/Ti three-layer structure
- the etching of the conductive layer in the partially reserved area of the photoresist includes:
- the first thickness of the partially reserved photoresist area is adjusted so that when the conductive layer in the partially reserved photoresist area is etched, only Ti at the bottom of the first conductive pattern is etched.
- the forming the insulating layer covering the first conductive pattern includes:
- the forming a second conductive pattern on the insulating layer includes:
- the transparent conductive layer is patterned to form the second conductive pattern, and the second conductive pattern is in contact with the bottom and sidewalls of the groove through the via hole penetrating the insulating layer.
- FIG. 2 is a schematic diagram of the structure of the substrate of the embodiment of the disclosure.
- the touch display substrate of this embodiment includes: a base substrate 1.
- the gate insulating layer 4 covering the gate 8, the touch signal line 11, the source 9 and the drain 10 on the gate insulating layer 4, the flat layer 5 covering the touch signal line 11, the source 9 and the drain 10 ,
- the sidewalls and bottom of the groove on the surface of the wire 11 are in contact with each other to realize the connection with the touch signal wire 11, which
- the touch signal line 11 of this embodiment may adopt a three-layer structure of Ti/Al/Ti. As shown in FIG. 3, when the touch signal line 11 is manufactured, a light shielding layer 6, a buffer layer 2, and an active layer are formed. 7. The first titanium layer 21, the aluminum layer 22, and the second titanium layer 23 are formed on the base substrate 1 of the interlayer insulating layer 3, the gate electrode 8, and the gate insulating layer 4. The first titanium layer 21, the aluminum layer 22 and The second titanium layer 23 constitutes a conductive layer; as shown in FIG. 4, a photoresist 24 is formed on the first titanium layer 21, and the photoresist 24 is exposed using a gray tone mask or a halftone mask.
- a photoresist completely reserved area, a photoresist partially reserved area, and a photoresist removal area are formed, and the photoresist removal area corresponds to the removal of the touch signal line 11, the source electrode 9 and the drain electrode 10.
- the photoresist partially reserved area corresponds to the groove
- the photoresist fully reserved area corresponds to the source 9 and the drain 10; as shown in FIG.
- the photoresist The conductive layer in the glue removal area is etched to form the transition pattern of the touch signal line 11, the source electrode 9 and the drain electrode 10; the photoresist in the partially reserved area of the photoresist is removed; The conductive layer in the partially reserved area of the resist is etched to form the touch signal line 11; the photoresist in the completely reserved area of the photoresist is removed.
- the conductive layer in the photoresist removal area and the conductive layer in the photoresist partly reserved area may be etched once, for example, dry etching is used to form the source 9 and the conductive layer.
- the drain 10 and the touch signal line 11 are described.
- the position of the gray tone mask or halftone mask corresponding to the groove is in a half-exposure form, and the gray tone mask or halftone mask can be formed at the groove
- the first thickness of the photoresist partly reserved area can be adjusted (for example, by adjusting the exposure energy, etc.) so that when the conductive layer of the photoresist partly reserved area is etched, only up to
- the second titanium layer 23 is shown in FIG. 5.
- the second thickness of the photoresist completely reserved area formed at the source 9 and the drain 10 through the gray tone mask or halftone mask, the first thickness is less than the second thickness, as shown in FIG. 4 Show.
- an acrylic material layer is coated on the base substrate 1 on which the touch signal line 11 is formed, and the acrylic material layer is patterned to form a via hole exposing the groove, and then the via hole is formed.
- the acrylic material layer is cured to form a flat layer 5;
- a transparent conductive layer such as an indium tin oxide (ITO) layer
- ITO indium tin oxide
- a transparent conductive layer is formed on the flat layer 5 by ion sputtering, and the transparent conductive layer is patterned to form a touch
- the electrodes 12 and the touch electrodes 12 are in contact with the grooves of the touch signal lines 11 through the via holes penetrating the planar layer 5 to realize the connection between the touch signal lines 11 and the touch electrodes 12.
- the touch display substrate shown in FIG. 2 can be obtained.
- the technical solution of the present disclosure can increase the contact area of the touch signal 11 and the touch electrode 12, and reduce the contact resistance between the touch signal 11 and the touch electrode 12 Optimize the connection between the touch signal 11 and the touch electrode 12 to avoid poor sensing.
Landscapes
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (13)
- 一种基板,包括衬底基板和依次位于所述衬底基板上的第一导电图形、绝缘层和第二导电图形,所述第二导电图形通过贯穿所述绝缘层的过孔与所述第一导电图形连接,所述第一导电图形远离所述衬底基板的一侧表面上形成有凹槽,所述第二导电图形与所述凹槽的底部和侧壁相接触。
- 根据权利要求1所述的基板,其中,所述基板为触控基板,所述第一导电图形为触控信号线,所述第二导电图形为触控电极。
- 根据权利要求2所述的基板,其中,所述第一导电图形与所述基板的薄膜晶体管的源极和漏极同层同材料设置。
- 根据权利要求1所述的基板,其中,所述第一导电图形采用Ti/Al/Ti的三层结构,所述凹槽的底部暴露出所述第一导电图形底部的Ti。
- 一种触控显示装置,包括如权利要求1-4中任一项所述的基板。
- 一种基板的制作方法,包括:在衬底基板上形成第一导电图形,所述第一导电图形远离所述衬底基板的一侧表面上形成有凹槽;形成覆盖所述第一导电图形的绝缘层,所述绝缘层具有暴露出所述凹槽的过孔;在所述绝缘层上形成第二导电图形,所述第二导电图形通过所述过孔与所述凹槽的底部和侧壁相接触。
- 根据权利要求6所述的基板的制作方法,其中,所述基板为触控基板,所述第一导电图形为触控信号线,所述第二导电图形为触控电极。
- 根据权利要求7所述的基板的制作方法,其中,所述在衬底基板上形成第一导电图形包括:采用同一掩膜板通过一次构图工艺形成所述第一导电图形、所述基板的薄膜晶体管的源极和漏极。
- 根据权利要求8所述的基板的制作方法,其中,所述采用同一掩膜板通过一次构图工艺形成所述第一导电图形、所述基板的薄膜晶体管的源极和漏极包括:形成导电层;在所述导电层上涂覆光刻胶,利用灰色调掩膜板或半色调掩膜板对光刻胶进行曝光,显影后形成光刻胶完全保留区域、光刻胶部分保留区域和光刻胶去除区域,所述光刻胶去除区域对应除所述第一导电图形、所述源极和所述漏极之外的部分,所述光刻胶部分保留区域对应所述凹槽;对所述光刻胶去除区域的导电层进行刻蚀,形成第一导电图形的过渡图形、所述源极和所述漏极;去除所述光刻胶部分保留区域的光刻胶;对所述光刻胶部分保留区域的导电层进行刻蚀,形成所述第一导电图形;去除所述光刻胶完全保留区域的光刻胶。
- 根据权利要求9所述的基板的制作方法,其中,所述光刻胶完全保留区域对应所述源极和所述漏极,所述光刻胶部分保留区域的第一厚度小于所述光刻胶完全保留区域的第二厚度。
- 根据权利要求9所述的基板的制作方法,其中,所述第一导电图形采用Ti/Al/Ti的三层结构,所述对所述光刻胶部分保留区域的导电层进行刻蚀,包括:调整所述光刻胶部分保留区域的第一厚度,以使得对所述光刻胶部分保留区域的导电层进行刻蚀时,仅刻蚀到所述第一导电图形底部的Ti。
- 根据权利要求6所述的基板的制作方法,其中,所述形成覆盖所述第一导电图形的绝缘层包括:在形成有所述第一导电图形的衬底基板上涂覆亚克力材料层;对所述亚克力材料层进行构图,形成暴露出所述凹槽的过孔;对形成有所述过孔的亚克力材料层进行固化,形成所述绝缘层。
- 根据权利要求6所述的基板的制作方法,其中,所述在所述绝缘层上形成第二导电图形包括:在所述绝缘层上形成透明导电层;对透明导电层进行构图形成所述第二导电图形,所述第二导电图形通过贯穿所述绝缘层的所述过孔与所述凹槽的底部和侧壁相接触。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910207431.8 | 2019-03-19 | ||
CN201910207431.8A CN109960438B (zh) | 2019-03-19 | 2019-03-19 | 基板及其制作方法、触控显示装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2020186989A1 true WO2020186989A1 (zh) | 2020-09-24 |
Family
ID=67024509
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/CN2020/076942 WO2020186989A1 (zh) | 2019-03-19 | 2020-02-27 | 基板及其制作方法、触控显示装置 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN109960438B (zh) |
WO (1) | WO2020186989A1 (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109960438B (zh) * | 2019-03-19 | 2021-04-23 | 京东方科技集团股份有限公司 | 基板及其制作方法、触控显示装置 |
CN111129032A (zh) * | 2019-12-19 | 2020-05-08 | 武汉华星光电技术有限公司 | 一种阵列基板及其制作方法 |
CN114093241B (zh) * | 2020-08-25 | 2023-08-15 | 合肥鑫晟光电科技有限公司 | 驱动背板及其制作方法、显示装置 |
CN112987369A (zh) * | 2021-02-08 | 2021-06-18 | 武汉华星光电技术有限公司 | 显示面板、显示面板的制备方法及显示装置 |
CN113193032A (zh) * | 2021-04-29 | 2021-07-30 | 合肥维信诺科技有限公司 | 显示面板、显示装置及显示面板的制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102074502A (zh) * | 2009-11-20 | 2011-05-25 | 乐金显示有限公司 | 制造阵列基板的方法 |
CN102983135A (zh) * | 2012-12-13 | 2013-03-20 | 京东方科技集团股份有限公司 | 一种阵列基板、显示装置及阵列基板的制备方法 |
CN103681488A (zh) * | 2013-12-16 | 2014-03-26 | 合肥京东方光电科技有限公司 | 阵列基板及其制作方法,显示装置 |
US20180248011A1 (en) * | 2015-09-25 | 2018-08-30 | Intel Corporation | Semiconductor device contacts with increased contact area |
CN109960438A (zh) * | 2019-03-19 | 2019-07-02 | 京东方科技集团股份有限公司 | 基板及其制作方法、触控显示装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100626378B1 (ko) * | 2004-06-25 | 2006-09-20 | 삼성전자주식회사 | 반도체 장치의 배선 구조체 및 그 형성 방법 |
KR100764386B1 (ko) * | 2006-03-20 | 2007-10-08 | 삼성전기주식회사 | 고온공정에 적합한 절연구조체 및 그 제조방법 |
CN101459181A (zh) * | 2007-12-14 | 2009-06-17 | 群康科技(深圳)有限公司 | 薄膜晶体管基板与液晶显示装置 |
KR101797651B1 (ko) * | 2011-06-15 | 2017-11-15 | 미래나노텍(주) | 터치스크린 패널용 배선 전극 및 이를 구비하는 터치스크린 패널 |
KR102109166B1 (ko) * | 2013-01-15 | 2020-05-12 | 삼성디스플레이 주식회사 | 박막 트랜지스터 및 이를 구비하는 표시 기판 |
CN104658973B (zh) * | 2015-02-28 | 2017-10-24 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示装置 |
CN105097845A (zh) * | 2015-08-24 | 2015-11-25 | 京东方科技集团股份有限公司 | 一种阵列基板、其制作方法及显示装置 |
CN105448935B (zh) * | 2016-01-04 | 2018-11-30 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法、显示装置 |
CN105468202B (zh) * | 2016-01-29 | 2018-09-14 | 上海中航光电子有限公司 | 阵列基板、触控显示面板及触控显示装置 |
CN107946342B (zh) * | 2017-11-14 | 2020-06-16 | 京东方科技集团股份有限公司 | 柔性显示基板及其制作方法、显示装置 |
-
2019
- 2019-03-19 CN CN201910207431.8A patent/CN109960438B/zh active Active
-
2020
- 2020-02-27 WO PCT/CN2020/076942 patent/WO2020186989A1/zh active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102074502A (zh) * | 2009-11-20 | 2011-05-25 | 乐金显示有限公司 | 制造阵列基板的方法 |
CN102983135A (zh) * | 2012-12-13 | 2013-03-20 | 京东方科技集团股份有限公司 | 一种阵列基板、显示装置及阵列基板的制备方法 |
CN103681488A (zh) * | 2013-12-16 | 2014-03-26 | 合肥京东方光电科技有限公司 | 阵列基板及其制作方法,显示装置 |
US20180248011A1 (en) * | 2015-09-25 | 2018-08-30 | Intel Corporation | Semiconductor device contacts with increased contact area |
CN109960438A (zh) * | 2019-03-19 | 2019-07-02 | 京东方科技集团股份有限公司 | 基板及其制作方法、触控显示装置 |
Also Published As
Publication number | Publication date |
---|---|
CN109960438A (zh) | 2019-07-02 |
CN109960438B (zh) | 2021-04-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2020186989A1 (zh) | 基板及其制作方法、触控显示装置 | |
US11056543B2 (en) | Display panel and manufacturing method thereof | |
WO2018209977A1 (zh) | 阵列基板及其制造方法、显示面板和显示装置 | |
WO2020216208A1 (zh) | 一种显示基板及其制作方法、显示装置 | |
US11335870B2 (en) | Display substrate and preparation method thereof, and display device | |
WO2015090000A1 (zh) | 阵列基板及其制作方法,显示装置 | |
US10418391B2 (en) | Display substrate, manufacture method thereof, and display device | |
WO2019007228A1 (zh) | 薄膜晶体管及其制备方法、阵列基板和显示装置 | |
US20190103419A1 (en) | Method for manufacturing array substrate, array substrate and display apparatus | |
WO2014205998A1 (zh) | Coa基板及其制造方法、显示装置 | |
WO2018157814A1 (zh) | 触控屏的制作方法、触控屏和显示装置 | |
CN104020902B (zh) | 一种触摸屏及显示装置 | |
JP6049111B2 (ja) | 有機薄膜トランジスタアレイ基板及びその製造方法、並びに表示装置 | |
WO2014190657A1 (zh) | 像素单元及其制备方法、阵列基板、显示装置 | |
CN111785760B (zh) | 一种显示基板及其制备方法、显示装置 | |
WO2014166150A1 (zh) | 触摸面板及其制作方法、显示装置 | |
US20210405478A1 (en) | Array substrate and manufacturing method thereof, and display panel | |
US10651244B2 (en) | Touch display panel, method for fabricating the same, and display device | |
WO2016169355A1 (zh) | 阵列基板及其制备方法、显示面板、显示装置 | |
WO2019218837A1 (zh) | 触控面板及其制作方法、触控装置 | |
WO2018166022A1 (zh) | Tft基板的制作方法及tft基板 | |
WO2015043023A1 (zh) | Tft-lcd阵列基板的制造方法、液晶面板及液晶显示器 | |
WO2019237498A1 (zh) | 一种有源矩阵有机发光二极管显示器及其制作方法 | |
WO2016206203A1 (zh) | 导电结构及其制作方法、阵列基板、显示装置 | |
WO2015021712A1 (zh) | 阵列基板及其制造方法和显示装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 20773772 Country of ref document: EP Kind code of ref document: A1 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 20773772 Country of ref document: EP Kind code of ref document: A1 |
|
32PN | Ep: public notification in the ep bulletin as address of the adressee cannot be established |
Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 17/02/2022) |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 20773772 Country of ref document: EP Kind code of ref document: A1 |