WO2020133161A1 - 一种显示屏，电子设备及显示屏制造方法 - Google Patents

一种显示屏，电子设备及显示屏制造方法 Download PDF

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Publication number
WO2020133161A1
WO2020133161A1 PCT/CN2018/124694 CN2018124694W WO2020133161A1 WO 2020133161 A1 WO2020133161 A1 WO 2020133161A1 CN 2018124694 W CN2018124694 W CN 2018124694W WO 2020133161 A1 WO2020133161 A1 WO 2020133161A1
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Prior art keywords
layer
pixel
electrode
driving circuit
micro led
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PCT/CN2018/124694
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English (en)
French (fr)
Inventor
贾彦峰
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华为技术有限公司
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Publication date
Application filed by 华为技术有限公司 filed Critical 华为技术有限公司
Priority to KR1020217023980A priority Critical patent/KR102486640B1/ko
Priority to PCT/CN2018/124694 priority patent/WO2020133161A1/zh
Priority to CN201880100526.3A priority patent/CN113574585B/zh
Priority to US17/418,386 priority patent/US20220149024A1/en
Priority to EP18944800.4A priority patent/EP3905226B1/en
Priority to JP2021537755A priority patent/JP7259046B2/ja
Publication of WO2020133161A1 publication Critical patent/WO2020133161A1/zh

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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • G09F9/335—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes being organic light emitting diodes [OLED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/35—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being liquid crystals
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/70—OLEDs integrated with inorganic light-emitting elements, e.g. with inorganic electroluminescent elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0421—Structural details of the set of electrodes
    • G09G2300/0426—Layout of electrodes and connections
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0439—Pixel structures
    • G09G2300/0452—Details of colour pixel setup, e.g. pixel composed of a red, a blue and two green components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements

Definitions

  • This application relates to the field of display screens, especially Micro LED and AMOLED technologies.
  • Active matrix organic light-emitting diode Active-matrix Organic Light Emitting Diode
  • OLED Organic Light Emitting Diod
  • the AOLED display uses an independent thin film transistor TFT drive control unit to control each OLED pixel in the AMOLED display to emit light. Since the organic light-emitting materials used in OLED pixels are particularly sensitive to oxygen and water vapor, in order to prevent the organic light-emitting materials from oxidizing when exposed to water and air, the performance of the AOLED display is rapidly degraded. There is a certain width of encapsulation layer around the AMOLED display, that is, the border. In the prior art, the frame area has no display unit and cannot display the screen content. Therefore, how to reduce the no-display area of the AMOLED display becomes an important issue.
  • embodiments of the present application provide a display screen, a method for manufacturing the display screen, and an electronic device using the display screen.
  • the technical solution is as follows:
  • an embodiment of the present application provides a display screen, including: a substrate for carrying the components of the display screen; a drive circuit backplane, including a plurality of drive circuit units, the drive circuit backplane provided on the substrate Above; the first pixel layer, including a plurality of pixels, each pixel of the first pixel layer includes a plurality of sub-pixels, each sub-pixel of the first pixel layer includes an organic light emitting diode OLED device, wherein, the first pixel layer Provided above the driving circuit backplane, the OLED device of each sub-pixel of the first pixel layer is connected to at least one driving circuit unit in the driving circuit backplane; the second pixel layer includes a first electrode layer and a second electrode Layer and a plurality of pixels disposed between the first electrode layer and the second electrode layer, each pixel of the second pixel layer includes a plurality of sub-pixels, and each sub-pixel of the second pixel layer includes a miniature light emitting diode Micro LED device, wherein the second
  • a touch-sensitive surface may also be provided above the display screen.
  • the Micro LED device is a vertical Micro LED device
  • the vertical Micro LED device includes a top electrode and a bottom electrode, wherein the second electrode layer is above the first electrode layer, and the vertical
  • the bottom electrode of the type Micro LED device is connected to the first electrode layer
  • the top electrode of the vertical Micro LED device is connected to the second electrode layer.
  • the second pixel layer further includes a passivation layer.
  • the passivation layer is disposed between the first electrode layer and the second electrode layer, and covers the vertical micro LED device.
  • the advantage of this method is that the passivation layer can isolate the first electrode layer and the second electrode layer, and at the same time, it can also isolate different vertical Micro LED devices.
  • the passivation layer is provided with an opening above the top electrode of the vertical Micro LED device, and the top electrode is connected to the second electrode layer through the opening.
  • the passivation layer may be provided on the first electrode layer, and the vertical micro LED device may be connected to the first electrode layer by stamping.
  • the vertical Micro LED device may be connected to the first electrode layer by bonding, and then the passivation layer may be fabricated to cover the vertical Micro LED device.
  • the advantage of this method is that the installation process of the vertical Micro LED device and the first electrode layer is simpler.
  • each driving circuit unit includes a plurality of transistors, the source and drain of all the transistors of the above driving circuit backplane constitute a third electrode layer, and the gates of all the transistors of the above driving circuit backplane A fourth electrode layer is formed, and the first electrode layer is located on the same layer as the third electrode layer or the fourth electrode layer.
  • the first electrode is connected to the positive voltage of the power supply, and the second electrode is connected to the negative voltage of the power supply.
  • the advantage of this method is that the first electrode and the first pixel layer can share a circuit that provides a positive voltage.
  • the subpixel arrangement manner of the second pixel layer is a Pentile arrangement or a Bayer arrangement.
  • the advantage of this method is that each pixel only needs to set two sub-pixels, reducing the number of sub-pixels.
  • the display screen further includes a thin film encapsulation layer, the thin film encapsulation layer is disposed above the second electrode to cover the second electrode, or the display screen further includes a light shielding layer, and the light shielding layer is provided Above the backplane of the driving circuit, covering the first electrode layer, or the vertical Micro LED device includes an n-type doped layer and a p-type doped layer, the n-type doped layer and the top of the vertical Micro LED device Electrode connection, the p-type doped layer is connected to the bottom electrode of the vertical Micro LED device, or the first electrode layer is an opaque electrode layer, and the second electrode layer is a transparent electrode layer.
  • a touch-sensitive surface may also be provided above the display screen.
  • the above-mentioned Micro LED device is a flip-chip Micro LED device, and the above-mentioned flip-chip Micro LED device includes a P-pole and an N-pole, and the P-pole and N-pole are located on the same side of the above-mentioned flip-chip Micro-LED device side.
  • the advantage of this method is that the P and N poles are on the same layer and can be made together.
  • the P pole or the N pole of the flip-chip Micro LED device is connected to at least one driving circuit unit.
  • the display screen further includes a thin film encapsulation layer, and the thin film encapsulation layer covers the first pixel layer and the second pixel layer.
  • the thin film encapsulation layer is flexible, which can keep the above display screen flexible.
  • the driving circuit unit is a 2T1C driving circuit unit or a 5T1C driving circuit unit.
  • the advantage of this method is that the 5T1C drive circuit unit can make the above-mentioned flip-chip Micro LED device more stable and uniform.
  • the above-mentioned driving circuit unit may be a 4T2C driving circuit unit.
  • the drive circuit unit of the flip-chip Micro LED device is connected to the negative voltage of the power supply, and the P pole of the flip-chip Micro LED device is connected to the positive voltage of the power supply.
  • the subpixel arrangement manner of the second pixel layer is a Pentile arrangement or a Bayer arrangement.
  • the advantage of this method is that each pixel only needs to set two sub-pixels, reducing the number of sub-pixels.
  • the above-mentioned flip-chip Micro LED device is connected to the above-mentioned driving circuit unit by bonding, or the above-mentioned thin-film encapsulation layer includes a first inorganic encapsulation layer, a second organic encapsulation layer, and a third inorganic encapsulation Layer, or, the display screen further includes a passivation layer, the passivation layer is disposed above the driving circuit backplane, below the first pixel layer and the second pixel layer, or, the display screen further includes a planarization layer , The planarization layer is disposed above the backplane of the driving circuit, below the first pixel layer and the second pixel layer, or the display screen further includes a light shielding layer, the light shielding layer is disposed above the backplane of the driving circuit, covering The first electrode layer, or the first electrode layer and the second electrode layer are opaque electrode layers.
  • the present application provides an electronic device including a display screen and a battery;
  • the above display screen includes: a substrate for carrying components of the above display screen; a driving circuit backplane, including a plurality of driving circuit units, the above driving circuit The backplane is disposed above the substrate;
  • the first pixel layer includes a plurality of pixels, each pixel of the first pixel layer includes a plurality of sub-pixels, and each sub-pixel of the first pixel layer includes an organic light emitting diode OLED device, wherein ,
  • the first pixel layer is provided above the driving circuit backplane, the OLED device of each sub-pixel of the first pixel layer is connected to at least one driving circuit unit in the driving circuit backplane;
  • the second pixel layer includes the first An electrode layer, a second electrode layer, and a plurality of pixels disposed between the first electrode layer and the second electrode layer, each pixel of the second pixel layer includes a plurality of sub-pixels, and each sub-pixel of the second pixel layer
  • the Micro LED device is a vertical Micro LED device
  • the vertical Micro LED device includes a top electrode and a bottom electrode, wherein the second electrode layer is above the first electrode layer, and the vertical
  • the bottom electrode of the type Micro LED device is connected to the first electrode layer
  • the top electrode of the vertical Micro LED device is connected to the second electrode layer.
  • the second pixel layer further includes a passivation layer.
  • the passivation layer is disposed between the first electrode layer and the second electrode layer, and covers the vertical micro LED device.
  • the advantage of this method is that the passivation layer can isolate the first electrode layer and the second electrode layer, and at the same time, it can also isolate different vertical Micro LED devices.
  • the passivation layer is provided with an opening above the top electrode of the vertical Micro LED device, and the top electrode is connected to the second electrode layer through the opening.
  • the passivation layer may be provided on the first electrode layer, and the vertical micro LED device may be connected to the first electrode layer by stamping.
  • the vertical Micro LED device may be connected to the first electrode layer by bonding, and then the passivation layer may be fabricated to cover the vertical Micro LED device.
  • the advantage of this method is that the installation process of the vertical Micro LED device and the first electrode layer is simpler.
  • each driving circuit unit includes a plurality of transistors, the source and drain of all the transistors of the above driving circuit backplane constitute a third electrode layer, and the gates of all the transistors of the above driving circuit backplane A fourth electrode layer is formed, and the first electrode layer is located on the same layer as the third electrode layer or the fourth electrode layer.
  • the first electrode is connected to the positive voltage of the battery, and the second electrode is connected to the negative voltage of the battery.
  • the advantage of this method is that the first electrode and the first pixel layer can share a circuit that provides a positive voltage.
  • the subpixel arrangement manner of the second pixel layer is a Pentile arrangement or a Bayer arrangement.
  • the advantage of this method is that each pixel only needs to set two sub-pixels, reducing the number of sub-pixels.
  • the display screen further includes a thin film encapsulation layer, the thin film encapsulation layer is disposed above the second electrode to cover the second electrode, or the display screen further includes a light shielding layer, and the light shielding layer is provided Above the backplane of the driving circuit, covering the first electrode layer, or the vertical Micro LED device includes an n-type doped layer and a p-type doped layer, the n-type doped layer and the top of the vertical Micro LED device Electrode connection, the p-type doped layer is connected to the bottom electrode of the vertical Micro LED device, or the first electrode layer is an opaque electrode layer, the second electrode layer is a transparent electrode layer, or the vertical Micro LED device The first electrode layer is connected by a bonding method.
  • the present application provides an electronic device, including a display screen and a battery;
  • the above display screen includes: a substrate for carrying components of the above display screen; a driving circuit backplane, including a plurality of driving circuit units, the above driving circuit The backplane is disposed above the substrate and coupled to the battery;
  • the first pixel layer includes a plurality of pixels, each pixel of the first pixel layer includes a plurality of sub-pixels, and each sub-pixel of the first pixel layer includes an organic A light emitting diode OLED device, wherein the first pixel layer is provided above the driving circuit backplane, and the OLED device of each sub-pixel of the first pixel layer is connected to at least one driving circuit unit in the driving circuit backplane;
  • second The pixel layer includes a plurality of pixels, and each pixel of the second pixel layer includes a plurality of sub-pixels, and each sub-pixel of the second pixel layer includes a micro LED device, wherein the second pixel layer is disposed on the Above the
  • the above-mentioned Micro LED device is a flip-chip Micro LED device, and the above-mentioned flip-chip Micro LED device includes a P-pole and an N-pole, and the P-pole and N-pole are located on the same side of the above-mentioned flip-chip Micro-LED device side.
  • the advantage of this method is that the P and N poles are on the same layer and can be made together.
  • the P pole or the N pole of the flip-chip Micro LED device is connected to at least one driving circuit unit.
  • the display screen further includes a thin film encapsulation layer, and the thin film encapsulation layer covers the first pixel layer and the second pixel layer.
  • the thin film encapsulation layer is flexible, which can keep the above display screen flexible.
  • the driving circuit unit is a 2T1C driving circuit unit or a 5T1C driving circuit unit.
  • the advantage of this method is that the 5T1C drive circuit unit can make the above-mentioned flip-chip Micro LED device more stable and uniform.
  • the above-mentioned driving circuit unit may be a 4T2C driving circuit unit.
  • the drive circuit unit of the flip-chip Micro LED device is connected to the negative voltage of the battery, and the P pole of the flip-chip Micro LED device is connected to the positive voltage of the battery.
  • the subpixel arrangement manner of the second pixel layer is a Pentile arrangement or a Bayer arrangement.
  • the advantage of this method is that each pixel only needs to set two sub-pixels, reducing the number of sub-pixels.
  • the above-mentioned flip-chip Micro LED device is connected to the above-mentioned driving circuit unit by bonding, or the above-mentioned thin-film encapsulation layer includes a first inorganic encapsulation layer, a second organic encapsulation layer, and a third inorganic encapsulation Layer, or, the display screen further includes a passivation layer, the passivation layer is disposed above the driving circuit backplane, below the first pixel layer and the second pixel layer, or, the display screen further includes a planarization layer , The planarization layer is disposed above the backplane of the driving circuit, below the first pixel layer and the second pixel layer, or the display screen further includes a light shielding layer, the light shielding layer is disposed above the backplane of the driving circuit, covering The first electrode layer, or the first electrode layer and the second electrode layer are opaque electrode layers.
  • an embodiment of the present application provides a method for manufacturing a display screen, including: providing a substrate; fabricating a driving circuit backplane on the substrate, the driving circuit backplane including a plurality of driving units and electrode layers; in the driving circuit A first pixel layer is formed above the area where the backplane includes the drive unit, and the first pixel layer is composed of an organic light emitting diode OLED device; a second pixel layer is formed above the area where the drive circuit backplane includes the electrode layer, and the second pixel The layer is composed of a micro light emitting diode Micro LED device, wherein the second pixel layer surrounds the first pixel layer, and the area of the second pixel layer is smaller than the area of the first pixel layer.
  • the advantage of this method is that the electrode layer can use the process of making the driving circuit backplane, simplifying the manufacturing process of the display screen.
  • FIG. 1A is a schematic diagram of the front of a mobile phone using an AMOLED display.
  • FIG. 1B is a structural diagram of an electronic device according to an embodiment of the present application.
  • FIG. 1C is a plan view of an AMOLED display screen according to an embodiment of the present application.
  • FIG. 2 is a cross-sectional side view of an AMOLED display screen according to an embodiment of the present application.
  • 3A is a cross-sectional view of the AMOLED display screen shown in FIG. 2.
  • FIG. 3B is an OLED structure according to an embodiment of the present application.
  • FIG. 4 is a schematic diagram of a pixel driving circuit according to an embodiment of the present application.
  • FIG. 5 is a plan view of an AMOLED display screen according to an embodiment of the present application.
  • FIG. 6 is a cross-sectional view of the AMOLED display screen shown in FIG. 5.
  • FIG. 7 is a schematic diagram of a Micro LED device according to an embodiment of the present application.
  • 8A is a schematic diagram of an arrangement manner of sub-pixels according to an embodiment of the present application.
  • 8B is a schematic diagram of an arrangement manner of sub-pixels according to an embodiment of the present application.
  • FIG. 9 is a schematic diagram of another arrangement manner of seed pixels according to an embodiment of the present application.
  • FIG. 10 is a cross-sectional view of another AMOLED display screen according to an embodiment of the present application.
  • FIG. 11 is a schematic diagram of another Micro LED device according to an embodiment of the present application.
  • FIG. 12 is a schematic diagram of another pixel driving circuit according to an embodiment of the present application.
  • 13 is a method for manufacturing an electrode according to an embodiment of the present application.
  • FIG. 14 is a method for manufacturing a driving backplane according to an embodiment of the present application.
  • FIG. 15 is a cross-sectional view of another AMOLED display screen according to an embodiment of the present application.
  • FIG. 16 is a cross-sectional view of another AMOLED display screen according to an embodiment of the present application.
  • 17 is a cross-sectional view of another AMOLED display screen according to an embodiment of the present application.
  • FIG. 18 is a schematic diagram of the front of a mobile phone according to an embodiment of the present application.
  • the display screen described in the embodiments of the present application can be used on various electronic devices, such as mobile phones, tablet computers, desktops, laptops, notebook computers, ultra-mobile personal computers (Ultra-mobile Personal Computer (UMPC), handheld Computers, netbooks, personal digital assistants (PDAs), wearable electronic devices, virtual reality devices, etc.
  • UMPC Ultra-mobile Personal Computer
  • PDA personal digital assistants
  • wearable electronic devices virtual reality devices, etc.
  • Pixels are the basic unit of image display.
  • the pixels described in the embodiments of the present application include virtual pixels and physical pixels.
  • Virtual pixels refer to conceptual color blocks and are the smallest complete color blocks in image display.
  • a physical pixel refers to a sub-pixel group composed of sub-pixels. According to different display technologies, a sub-pixel group may include two sub-pixels, three sub-pixels, or four sub-pixels.
  • a physical pixel can display a virtual pixel alone, or it can display a virtual pixel in combination with other sub-pixels or physical pixels. Unless otherwise specified, the pixels in the embodiments of the present application refer to physical pixels.
  • a Micro LED physical pixel may include three sub-pixels, such as a Micro LED device emitting red light, a Micro LED device emitting blue light, and a Micro LED device emitting green light. These three Micro LED devices form a Physical pixels. This physical pixel can display a virtual pixel alone. For example, when the three Micro LED devices emit light at the same time, the red-emitting Micro LED device emits red light, the blue-emitting Micro LED device emits blue light, and the green-emitting Micro LED device emits green light, which can display a white virtual pixel .
  • a Micro LED physical pixel may include two sub-pixels, for example, the two sub-pixels may be a blue sub-pixel and a green sub-pixel, or a red sub-pixel and a green sub-pixel.
  • Such a physical pixel can display a virtual pixel by borrowing a sub-pixel in the adjacent physical pixel.
  • a physical pixel includes a blue sub-pixel and a green sub-pixel.
  • a red sub-pixel in an adjacent physical pixel can be borrowed to display a virtual pixel.
  • the driving methods of the sub-pixels include passive driving (Passive) and active driving (Active Matrix). If the OLED display adopts the active driving method, it can be called an AMOLED display, and if it adopts the passive driving method, it can be called a PMOLED display. Passive driving is also called passive driving. The cathode and anode form a matrix, and the sub-pixels in the array are lit in a scanning manner. Each scan will make the sub-pixels emit light instantly.
  • the advantage of passive driving is that it has a simple structure, which can effectively reduce the production cost. The disadvantage is that the reaction speed is slow, and it is difficult to apply to medium or large-sized display screens.
  • the active driving method is also called the active driving method, which refers to controlling a single pixel to emit light through a TFT driving circuit.
  • the advantage is that the required driving voltage is low and the life of the sub-pixel is long.
  • the disadvantage is that the manufacturing process is complicated and the cost is high.
  • FIG. 1A shows a front plan view of a mobile phone using an AMOLED display screen.
  • the front of the mobile phone may include a display area and a non-display area.
  • the display area refers to an area that can display a screen
  • the non-display area refers to an area that cannot display a screen.
  • the camera and microphone can be placed in the non-display area.
  • the OLED organic light-emitting material used in the AMOLED display is a hydrophilic organic material, and an irreversible photo-oxidation reaction occurs when it encounters water vapor and oxygen, which affects the display performance of the OLED organic light-emitting material.
  • water vapor and oxygen also have a strong erosion effect on the electrode materials commonly used in AMOLED displays such as aluminum, magnesium, and silver. Therefore, the AMOLED display has extremely high requirements for isolating the penetration of external moisture and oxygen.
  • the AMOLED display screen has a frame area with a certain width, which is used to isolate external moisture and oxygen. The border area exists because of the packaging design used to isolate water vapor and oxygen, such as the TFE thin film packaging layer design.
  • the packaging design used in the frame area in the prior art cannot place OLED pixels, so the frame area cannot display images. Even if the front of the mobile phone completely covers the AMOLED display, there is a large area of no display area.
  • FIG. 1B shows a schematic structural diagram of the electronic device 100.
  • the electronic device 100 may include a processor 110, an external memory interface 120, an internal memory 121, a universal serial bus (USB) interface 130, a charging management module 140, a power management module 141, a battery 142, an antenna 1, an antenna 2 , Mobile communication module 150, wireless communication module 160, audio module 170, speaker 170A, receiver 170B, microphone 170C, headphone jack 170D, sensor module 180, key 190, motor 191, indicator 192, camera 193, display 194, and Subscriber identification module (SIM) card interface 195, etc.
  • SIM Subscriber identification module
  • the sensor module 180 may include a pressure sensor 180A, a gyro sensor 180B, an air pressure sensor 180C, a magnetic sensor 180D, an acceleration sensor 180E, a distance sensor 180F, a proximity light sensor 180G, a fingerprint sensor 180H, a temperature sensor 180J, a touch sensor 180K, and ambient light Sensor 180L, bone conduction sensor 180M, etc.
  • the structure illustrated in the embodiment of the present application does not constitute a specific limitation on the electronic device 100.
  • the electronic device 100 may include more or fewer components than shown, or combine certain components, or split certain components, or arrange different components.
  • the illustrated components can be implemented in hardware, software, or a combination of software and hardware.
  • the processor 110 may include one or more processing units.
  • the processor 110 may include an application processor (application processor, AP), a modem processor, a graphics processor (graphics processing unit, GPU), and an image signal processor. (image)signal processor (ISP), controller, memory, video codec, digital signal processor (DSP), baseband processor, and/or neural-network processing unit (NPU) Wait.
  • the different processing units may be independent devices or may be integrated in one or more processors.
  • the controller may be the nerve center and command center of the electronic device 100.
  • the controller can generate the operation control signal according to the instruction operation code and the timing signal to complete the control of instruction fetch and execution.
  • the processor 110 may also be provided with a memory for storing instructions and data.
  • the memory in the processor 110 is a cache memory.
  • the memory may store instructions or data that the processor 110 has just used or recycled. If the processor 110 needs to use the instruction or data again, it can be directly called from the memory. The repeated access is avoided, and the waiting time of the processor 110 is reduced, thereby improving the efficiency of the system.
  • the processor 110 may include one or more interfaces.
  • Interfaces can include integrated circuit (inter-integrated circuit, I2C) interface, integrated circuit built-in audio (inter-integrated circuit, sound, I2S) interface, pulse code modulation (pulse code modulation (PCM) interface, universal asynchronous transceiver (universal) asynchronous receiver/transmitter, UART) interface, mobile industry processor interface (MIPI), general-purpose input/output (GPIO) interface, subscriber identity module (SIM) interface, and /Or universal serial bus (USB) interface, etc.
  • I2C integrated circuit
  • I2S integrated circuit built-in audio
  • PCM pulse code modulation
  • PCM pulse code modulation
  • UART universal asynchronous transceiver
  • MIPI mobile industry processor interface
  • GPIO general-purpose input/output
  • SIM subscriber identity module
  • USB universal serial bus
  • the interface connection relationship between the modules illustrated in the embodiments of the present application is only a schematic description, and does not constitute a limitation on the structure of the electronic device 100.
  • the electronic device 100 may also use different interface connection methods in the foregoing embodiments, or a combination of multiple interface connection methods.
  • the charging management module 140 is used to receive charging input from the charger.
  • the charger can be a wireless charger or a wired charger.
  • the charging management module 140 may receive the charging input of the wired charger through the USB interface 130.
  • the charging management module 140 may receive wireless charging input through the wireless charging coil of the electronic device 100. While the charging management module 140 charges the battery 142, it can also supply power to the electronic device through the power management module 141.
  • the power management module 141 is used to connect the battery 142, the charging management module 140 and the processor 110.
  • the power management module 141 receives input from the battery 142 and/or the charge management module 140, and supplies power to the processor 110, internal memory 121, external memory, display screen 194, camera 193, and wireless communication module 160.
  • the power management module 141 can also be used to monitor battery capacity, battery cycle times, battery health status (leakage, impedance) and other parameters.
  • the power management module 141 may also be disposed in the processor 110.
  • the power management module 141 and the charging management module 140 may also be set in the same device.
  • the wireless communication function of the electronic device 100 can be realized by the antenna 1, the antenna 2, the mobile communication module 150, the wireless communication module 160, the modem processor, and the baseband processor.
  • Antenna 1 and antenna 2 are used to transmit and receive electromagnetic wave signals.
  • Each antenna in the electronic device 100 may be used to cover a single or multiple communication frequency bands. Different antennas can also be reused to improve antenna utilization.
  • the antenna 1 can be multiplexed as a diversity antenna of a wireless local area network. In other embodiments, the antenna may be used in conjunction with a tuning switch.
  • the mobile communication module 150 may provide a wireless communication solution including 2G/3G/4G/5G and the like applied to the electronic device 100.
  • the mobile communication module 150 may include at least one filter, switch, power amplifier, low noise amplifier (LNA), and the like.
  • the mobile communication module 150 can receive the electromagnetic wave from the antenna 1 and filter, amplify, etc. the received electromagnetic wave, and transmit it to the modem processor for demodulation.
  • the mobile communication module 150 can also amplify the signal modulated by the modulation and demodulation processor and convert it to electromagnetic wave radiation through the antenna 1.
  • at least part of the functional modules of the mobile communication module 150 may be provided in the processor 110.
  • at least part of the functional modules of the mobile communication module 150 and at least part of the modules of the processor 110 may be provided in the same device.
  • the modem processor may include a modulator and a demodulator.
  • the modem processor may be an independent device.
  • the modem processor may be independent of the processor 110, and may be set in the same device as the mobile communication module 150 or other functional modules.
  • the wireless communication module 160 can provide wireless local area networks (wireless local area networks, WLAN) (such as wireless fidelity (Wi-Fi) networks), Bluetooth (bluetooth, BT), and global navigation satellites that are applied to the electronic device 100 Wireless communication solutions such as global navigation (satellite system, GNSS), frequency modulation (FM), near field communication (NFC), infrared technology (infrared, IR), etc.
  • the wireless communication module 160 may be one or more devices integrating at least one communication processing module.
  • the wireless communication module 160 receives the electromagnetic wave via the antenna 2, frequency-modulates and filters the electromagnetic wave signal, and sends the processed signal to the processor 110.
  • the wireless communication module 160 can also receive the signal to be transmitted from the processor 110, frequency-modulate it, amplify it, and convert it to electromagnetic waves through the antenna 2 to radiate it out.
  • the antenna 1 of the electronic device 100 and the mobile communication module 150 are coupled, and the antenna 2 and the wireless communication module 160 are coupled so that the electronic device 100 can communicate with the network and other devices through wireless communication technology.
  • the wireless communication technology may include a global mobile communication system (global system for mobile communications, GSM), general packet radio service (general packet radio service, GPRS), code division multiple access (code division multiple access, CDMA), broadband Wideband code division multiple access (WCDMA), time-division code division multiple access (TD-SCDMA), long-term evolution (LTE), BT, GNSS, WLAN, NFC , FM, and/or IR technology, etc.
  • the GNSS may include a global positioning system (GPS), a global navigation satellite system (GLONASS), a beidou navigation system (BDS), and a quasi-zenith satellite system (quasi -zenith satellite system (QZSS) and/or satellite-based augmentation systems (SBAS).
  • GPS global positioning system
  • GLONASS global navigation satellite system
  • BDS beidou navigation system
  • QZSS quasi-zenith satellite system
  • SBAS satellite-based augmentation systems
  • the electronic device 100 realizes a display function through a GPU, a display screen 194, and an application processor.
  • the GPU is a microprocessor for image processing, connecting the display screen 194 and the application processor.
  • the GPU is used to perform mathematical and geometric calculations, and is used for graphics rendering.
  • the processor 110 may include one or more GPUs that execute program instructions to generate or change display information.
  • the display screen 194 is used to display images, videos and the like.
  • the display screen 194 includes a display panel.
  • the display panel may use a liquid crystal display (LCD), organic light-emitting diode (OLED), active matrix organic light-emitting diode or active matrix organic light-emitting diode (active-matrix organic light-emitting diode) emitting diode, AMOLED), flexible light-emitting diode (FLED), Miniled, MicroLed, Micro-oLed, quantum dot light emitting diode (QLED), etc.
  • the electronic device 100 may include 1 or N display screens 194, where N is a positive integer greater than 1.
  • the electronic device 100 can realize a shooting function through an ISP, a camera 193, a video codec, a GPU, a display screen 194, an application processor, and the like.
  • the ISP processes the data fed back by the camera 193. For example, when taking a picture, the shutter is opened, and light is transmitted to the photosensitive element of the camera through the lens, and the optical signal is converted into an electrical signal. The photosensitive element of the camera transmits the electrical signal to the ISP for processing and converts it into an image visible to the naked eye. ISP can also optimize the algorithm of image noise, brightness and skin color. ISP can also optimize the exposure, color temperature and other parameters of the shooting scene. In some embodiments, the ISP may be set in the camera 193.
  • the camera 193 is used to capture still images or videos.
  • the object generates an optical image through the lens and projects it onto the photosensitive element.
  • the photosensitive element may be a charge coupled device (charge coupled device, CCD) or a complementary metal-oxide-semiconductor (CMOS) phototransistor.
  • CCD charge coupled device
  • CMOS complementary metal-oxide-semiconductor
  • the photosensitive element converts the optical signal into an electrical signal, and then transmits the electrical signal to the ISP to convert it into a digital image signal.
  • the ISP outputs the digital image signal to the DSP for processing.
  • DSP converts digital image signals into standard RGB, YUV and other format image signals.
  • the electronic device 100 may include 1 or N cameras 193, where N is a positive integer greater than 1.
  • the digital signal processor is used to process digital signals. In addition to digital image signals, it can also process other digital signals. For example, when the electronic device 100 is selected at a frequency point, the digital signal processor is used to perform Fourier transform on the energy at the frequency point.
  • the video codec is used to compress or decompress digital video.
  • the electronic device 100 may support one or more video codecs. In this way, the electronic device 100 can play or record videos in various encoding formats, for example: moving picture experts group (MPEG) 1, MPEG2, MPEG3, MPEG4, etc.
  • MPEG moving picture experts group
  • NPU is a neural-network (NN) computing processor.
  • NN neural-network
  • the NPU can realize applications such as intelligent recognition of the electronic device 100, such as image recognition, face recognition, voice recognition, and text understanding.
  • the external memory interface 120 can be used to connect an external memory card, such as a Micro SD card, to expand the storage capacity of the electronic device 100.
  • the external memory card communicates with the processor 110 through the external memory interface 120 to realize the data storage function. For example, save music, video and other files in an external memory card.
  • the internal memory 121 may be used to store computer executable program code, where the executable program code includes instructions.
  • the processor 110 executes instructions stored in the internal memory 121 to execute various functional applications and data processing of the electronic device 100.
  • the internal memory 121 may include a storage program area and a storage data area.
  • the storage program area may store an operating system, at least one function required application programs (such as sound playback function, image playback function, etc.).
  • the storage data area may store data (such as audio data, phone book, etc.) created during use of the electronic device 100 and the like.
  • the internal memory 121 may include a high-speed random access memory, and may also include a non-volatile memory, such as at least one magnetic disk storage device, a flash memory device, a universal flash memory (universal flash storage, UFS), and so on.
  • a non-volatile memory such as at least one magnetic disk storage device, a flash memory device, a universal flash memory (universal flash storage, UFS), and so on.
  • the electronic device 100 may implement audio functions through an audio module 170, a speaker 170A, a receiver 170B, a microphone 170C, a headphone interface 170D, and an application processor. For example, music playback, recording, etc.
  • the audio module 170 is used to convert digital audio information into analog audio signal output, and also used to convert analog audio input into digital audio signal.
  • the audio module 170 can also be used to encode and decode audio signals.
  • the audio module 170 may be disposed in the processor 110, or some functional modules of the audio module 170 may be disposed in the processor 110.
  • the speaker 170A also called “speaker” is used to convert audio electrical signals into sound signals.
  • the electronic device 100 can listen to music through the speaker 170A, or listen to a hands-free call.
  • the receiver 170B also known as "handset" is used to convert audio electrical signals into sound signals.
  • the voice can be received by bringing the receiver 170B close to the ear.
  • the microphone 170C also known as “microphone”, “microphone”, is used to convert sound signals into electrical signals.
  • the user can make a sound by approaching the microphone 170C through the human mouth, and input the sound signal to the microphone 170C.
  • the electronic device 100 may be provided with at least one microphone 170C. In other embodiments, the electronic device 100 may be provided with two microphones 170C. In addition to collecting sound signals, it may also implement a noise reduction function. In other embodiments, the electronic device 100 may also be provided with three, four, or more microphones 170C to collect sound signals, reduce noise, identify sound sources, and implement directional recording functions.
  • the headset interface 170D is used to connect wired headsets.
  • the earphone interface 170D may be a USB interface 130, or a 3.5mm open mobile electronic device (open mobile terminal) platform (OMTP) standard interface, and the American Telecommunications Industry Association (cellular telecommunications industry association of the United States, CTIA) standard interface.
  • OMTP open mobile electronic device
  • CTIA American Telecommunications Industry Association
  • the pressure sensor 180A is used to sense the pressure signal and can convert the pressure signal into an electrical signal.
  • the pressure sensor 180A may be provided on the display screen 194.
  • the capacitive pressure sensor may be a parallel plate including at least two conductive materials. When force is applied to the pressure sensor 180A, the capacitance between the electrodes changes.
  • the electronic device 100 determines the strength of the pressure according to the change in capacitance.
  • the electronic device 100 detects the intensity of the touch operation according to the pressure sensor 180A.
  • the electronic device 100 may also calculate the touched position based on the detection signal of the pressure sensor 180A.
  • touch operations that act on the same touch position but have different touch operation intensities may correspond to different operation instructions. For example, when a touch operation with a touch operation intensity less than the first pressure threshold is applied to the short message application icon, an instruction to view the short message is executed. When a touch operation with a touch operation intensity greater than or equal to the first pressure threshold acts on the short message application icon, an instruction to create a new short message is executed.
  • the gyro sensor 180B may be used to determine the movement posture of the electronic device 100.
  • the air pressure sensor 180C is used to measure air pressure.
  • the magnetic sensor 180D includes a Hall sensor.
  • the acceleration sensor 180E can detect the magnitude of acceleration of the electronic device 100 in various directions (generally three axes). When the electronic device 100 is stationary, the magnitude and direction of gravity can be detected. It can also be used to recognize the posture of electronic devices, and can be used in horizontal and vertical screen switching, pedometer and other applications.
  • the distance sensor 180F is used to measure the distance.
  • the proximity light sensor 180G may include, for example, a light emitting diode (LED) and a light detector, such as a photodiode.
  • LED light emitting diode
  • a light detector such as a photodiode.
  • the ambient light sensor 180L is used to sense the brightness of ambient light.
  • the fingerprint sensor 180H is used to collect fingerprints.
  • the electronic device 100 can use the collected fingerprint characteristics to realize fingerprint unlocking, access to application lock, fingerprint photo taking, fingerprint answering call, and the like.
  • the temperature sensor 180J is used to detect the temperature.
  • the electronic device 100 uses the temperature detected by the temperature sensor 180J to execute a temperature processing strategy.
  • Touch sensor 180K also known as "touch panel”.
  • the touch sensor 180K may be disposed on the display screen 194, and the touch sensor 180K and the display screen 194 constitute a touch screen, also called a "touch screen”.
  • the touch sensor 180K is used to detect a touch operation acting on or near it.
  • the touch sensor can pass the detected touch operation to the application processor to determine the type of touch event.
  • the visual output related to the touch operation can be provided through the display screen 194.
  • the touch sensor 180K may also be disposed on the surface of the electronic device 100, which is different from the location where the display screen 194 is located.
  • the bone conduction sensor 180M can acquire vibration signals.
  • the bone conduction sensor 180M can acquire the vibration signal of the vibrating bone mass of the human voice.
  • the bone conduction sensor 180M can also contact the pulse of the human body and receive a blood pressure beating signal.
  • the bone conduction sensor 180M may also be provided in the earphone and combined into a bone conduction earphone.
  • the audio module 170 may parse out the voice signal based on the vibration signal of the vibrating bone block of the voice part acquired by the bone conduction sensor 180M to realize the voice function.
  • the application processor may analyze the heart rate information based on the blood pressure beating signal acquired by the bone conduction sensor 180M to implement the heart rate detection function.
  • the key 190 includes a power-on key, a volume key, and the like.
  • the key 190 may be a mechanical key. It can also be a touch button.
  • the electronic device 100 can receive key input and generate key signal input related to user settings and function control of the electronic device 100.
  • the motor 191 may generate a vibration prompt.
  • the motor 191 can be used for vibration notification of incoming calls and can also be used for touch vibration feedback.
  • touch operations applied to different applications may correspond to different vibration feedback effects.
  • the motor 191 can also correspond to different vibration feedback effects.
  • Different application scenarios for example: time reminder, receiving information, alarm clock, game, etc.
  • Touch vibration feedback effect can also support customization.
  • the indicator 192 can be an indicator light, which can be used to indicate the charging state, the amount of power change, and can also be used to indicate messages, missed calls, notifications, and the like.
  • the SIM card interface 195 is used to connect a SIM card.
  • the SIM card can be inserted into or removed from the SIM card interface 195 to achieve contact and separation with the electronic device 100.
  • the electronic device 100 may support 1 or N SIM card interfaces, where N is a positive integer greater than 1.
  • the SIM card interface 195 can support Nano SIM cards, Micro SIM cards, SIM cards, etc.
  • the same SIM card interface 195 can insert multiple cards at the same time. The types of the multiple cards may be the same or different.
  • the SIM card interface 195 can also be compatible with different types of SIM cards.
  • the SIM card interface 195 can also be compatible with external memory cards.
  • the electronic device 100 interacts with the network through a SIM card to realize functions such as call and data communication.
  • the electronic device 100 uses eSIM, that is, an embedded SIM card.
  • the eSIM card may be embedded in the electronic device 100, and cannot be separated from the electronic device 100.
  • FIG. 1C shows a plan view of an AMOLED display screen.
  • the AMOLED display 200 includes a display area 102 and a bezel area 101.
  • the frame area 101 surrounds the display area 102. It should be noted that the frame area 101 is located in the non-display area shown in FIG. 1A, and the ratio of the frame area 101 to the area of the non-display area is determined by the technology of different terminal manufacturers.
  • the display screen 200 itself may be flexible, bendable or foldable.
  • the display area 102 includes a plurality of pixels 103, and each pixel includes a plurality of sub-pixels.
  • the pixel 103 includes a sub-pixel 104, a sub-pixel 105, and a sub-pixel 106.
  • the sub-pixel 104 can emit red light
  • the sub-pixel 105 can emit green light
  • the sub-pixel 106 can emit blue light.
  • FIG. 1C is merely exemplary.
  • the sub-pixel arrangement can also adopt a Pentile arrangement.
  • Each pixel contains only two sub-pixels. When illuminating, a single pixel of an adjacent pixel is borrowed to realize the single pixel to emit light.
  • the display screen 200 mainly includes a substrate 110, an AMOLED core layer 250 and a TFE encapsulation layer 230, where the substrate 110 can be used to carry components included in the display screen 200.
  • These components can be various components of the display screen, such as transistors, capacitors, electrodes, OLED devices, Micro LED devices, etc.
  • the substrate 110 includes a display area 102 and a bezel area 101.
  • a buffer layer 111 may be provided on the substrate 110.
  • the AMOLED core layer 250 may be disposed on the buffer layer 111 or directly on the substrate 110; the TFE encapsulation layer 230 encapsulates the AMOLED core layer 250.
  • the TFE encapsulation layer 230 is only exemplary, and is used to isolate the external water vapor and oxygen. In the prior art, AMOLED core layer 250 can also be encapsulated with glass.
  • the glass material Compared with the TFE encapsulation layer 230, the glass material has a better effect of isolating water vapor and oxygen from the outside world, but the glass material is difficult to fold or bend freely, and is not suitable for foldable and bendable AMOLED displays.
  • the AMOLED display screen may use the TFE encapsulation layer 230 to achieve the characteristics of being bendable and foldable.
  • the AMOLED core layer 250 includes a light-emitting front panel (Front Plane) 252 and a driving circuit back panel (Back Plane) 251.
  • the driving circuit back panel may also be referred to as a driving back panel.
  • the light-emitting front panel is mainly composed of sub-pixels using OLED organic light-emitting materials
  • the driving circuit back-plane is mainly composed of TFT thin-film transistors, which are used to drive the sub-pixels in the light-emitting front panel to emit light.
  • the display screen 100 may further include a polarizer 260.
  • the polarizer 260 is located above the TFE encapsulation layer 230, which can offset the reflected light generated by the outside light entering the AMOLED display screen, thereby reducing the interference caused by the reflection of the outside light and enhancing the contrast of the display screen.
  • 3A is a cross-sectional view taken along line A-B of FIG. 1C, and mainly includes a TFT encapsulation layer 230, a light-emitting front plate 251, a driving circuit back plate 252, and a substrate 110.
  • the material of the substrate 110 may be glass or plastic, which basically supports the AMOLED core layer 250.
  • a buffer layer 111 may be provided on the substrate 110.
  • the buffer layer 111 can reduce or prevent foreign materials, water vapor, or oxygen from penetrating into the light-emitting front plate and the driving circuit back plate, protect the TFT thin film transistor, and can also provide the substrate 110 with a flat surface.
  • the buffer layer 111 may be made of inorganic materials such as silicon oxide and silicon nitride.
  • the buffer layer 111 may be formed of multiple layers in which one or more inorganic layers are alternately stacked.
  • the driving circuit backplane 251 shown in FIG. 2 can see a more detailed structure.
  • the driving circuit backplane 251 may include a gate insulating layer 112, an insulating interlayer 113 and a plurality of TFT driving circuits.
  • Each TFT driving circuit may be composed of one or more transistors T and one or more capacitors C, used to control a single sub-pixel in the AMOLED display screen to emit light, such as controlling the sub-pixel 240 in FIG. 3A to emit light.
  • the cross-sectional view shown in FIG. 3A includes a specific structure of the driving circuit backplane 251.
  • the transistor T1 includes a semiconductor layer 205, a gate electrode 208, a source electrode 206, and a drain electrode 207.
  • the transistor T2 includes a semiconductor layer 201, a gate electrode 204, and a source electrode 202 and a drain electrode 203.
  • the semiconductor layer in a transistor can be made of low-temperature polysilicon (p-Si) or amorphous silicon (a-Si), and the source electrode, drain electrode and gate electrode can be made of molybdenum (Mo), aluminum (Al), chromium (Cr) ), one of gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) and copper (Cu) or their alloys are formed in a single layer or multiple layers.
  • Mo molybdenum
  • Al aluminum
  • Cr chromium
  • Au gold
  • Ti titanium
  • Ni nickel
  • Nd neodymium
  • Cu copper
  • the gate insulating layer 112 may be provided on the semiconductor layer, for example, the gate insulating layer shown in FIG. 3A covers the semiconductor layer 205 and the semiconductor layer 201.
  • the gate insulating layer 112 may be made of silicon oxide, silicon nitride, silicon oxynitride, or the like.
  • the intermediate insulating layer 113 may be disposed on the gate electrode, covering the gate electrode 204 and the gate electrode 208.
  • the intermediate insulating layer 113 may be made of silicon oxide, silicon nitride, or other materials.
  • the source electrode 202 and the drain electrode 203 of the transistor T2 may be provided on the gate insulating layer 112, by removing the contact holes formed by the gate insulating layer 112 and the intermediate insulating layer 113, Contact with the semiconductor layer 201.
  • the TFT drive circuit in the backplane of the drive circuit can have various structures.
  • the AMOLED display shown in FIG. 3A can use a traditional 2T1C structure TFT drive circuit, that is, each TFT drive circuit includes two transistors and one In the capacitor, one of the transistors is used as a switching transistor to control whether current enters the driving circuit, and the other transistor is used as a driving transistor, which is connected to the power supply voltage and provides a stable current for the sub-pixel within a certain period of time.
  • the capacitor is used to store the voltage, and after each scan, the driving transistor is guaranteed to provide a stable current to the sub-pixel within a certain period of time.
  • FIG. 4 is a logic circuit diagram corresponding to the TFT driving circuit in FIG. 3A.
  • T1 may be a switching transistor
  • T2 may be a driving transistor.
  • the gate electrode 208 of T1 shown in FIG. 3A is connected to the scan signal Vscan shown in FIG. 4, the source electrode 206 of T1 shown in FIG. 3A is connected to the data signal Vdata shown in FIG. 4, and the drain electrode 207 of T1 shown in FIG. 3A It is connected to the gate electrode 204 of T2 and one end of the capacitor C shown in FIG. 4.
  • the source electrode 202 of T2 shown in FIG. 3A is connected to the positive power supply voltage VDD shown in FIG. 4 and contacts the other end of the capacitor C, and the drain electrode 203 shown in FIG. 3A is connected to one electrode of the sub-pixel 240 shown in FIG. 4, The other electrode of the sub-pixel 240 is connected to the negative voltage VSS of the power supply, and the negative voltage VSS can be uniformly provided to all sub-pixels.
  • the OLED sub-pixels are driven by current, that is, when current passes through the sub-pixels, the sub-pixels can emit light. Therefore, it is possible to control whether the sub-pixel emits light and the intensity of light emission by controlling the current passing through the sub-pixel.
  • the driving chip of the AMOLED display screen sends out a scanning signal VScan every other time to find the sub-pixels that want to emit light.
  • T1 receives the scanning signal VScan
  • the transistor T1 is turned on, thus allowing the data signal Vdata to access the gate of T2 .
  • T2 receives the data signal Vdata
  • the transistor T2 is turned on, allowing current to reach the sub-pixel, and the sub-pixel starts to emit light.
  • the transistor T1 Since the scanning signal VScan will change from high level to low level within a scanning period, the transistor T1 is turned off, and Vdata cannot be connected to the gate of the transistor T2. Therefore, in order to ensure that the transistor T2 can continue to receive the data signal Vdata, the sub-pixel continues Illuminates until VScan's next scan cycle.
  • the capacitor C is used to store the data signal Vdata at the gate of T2 to ensure that the sub-pixels can continue to emit light during this scan period.
  • the 2T1C driving circuit shown in the embodiments of the present application is only exemplary, and other types of circuits and transistor structures can also be applied, such as low-gate transistors or more complicated compensation circuit designs.
  • TFT transistors at different locations may have different performance, which may cause differences in brightness display. Therefore, the AMOLED display can also adopt 7T1C, 6T1C, or 5T2C structures to compensate for the instability or performance difference of the 2T1C structure due to the process.
  • the light emitting front plate 252 shown in FIG. 2 may be disposed on the gate insulating layer 112 shown in FIG. 3A. As shown in FIG. 3A, the light emitting front plate may include a planarization layer 114, a passivation layer 119, a sub-pixel 240, and a pixel defining layer 115.
  • the planarization layer 114 may be provided on the source electrode and the drain electrode, protect the transistor and provide a flat surface.
  • a passivation layer (not shown in the figure) may be provided on the source electrode and the drain electrode, and the passivation layer may be used to isolate the source electrode and the drain electrode.
  • the planarization layer 114 may be provided on the passivation layer.
  • the planarization layer 114 may include organic compounds such as polymethylethacarylate or inorganic substances such as silicon compounds or metal oxides.
  • the passivation layer 119 may be covered on the planarization layer 114, and the passivation layer 119 may be formed of an inorganic insulating material, such as silicon nitride (SiNx), silicon oxide (SiO2), methyl methacrylate (PMMA), Benzocyclobutene (BCB), etc.
  • the passivation layer 119 can further isolate moisture and oxygen that have penetrated from the substrate 110.
  • the pixel defining layer 115 may be processed by dry etching, wet etching, nano-imprinting, etc. to form an opening, and the width of the opening may consider the resolution, pixel density, and sub-pixel density of the display screen.
  • the shape of the opening may be a concave structure, the longitudinal section of which is a "concave"-shaped structure or a dam structure, wherein the concave portion has vertical or inclined side walls.
  • a variety of concave structures may be formed on the surface of the pixel defining layer 115, such as triangular pyramids, pyramids, semicircles, and so on. Exemplarily, the pixel defining layer 115 shown in FIG.
  • the pixel defining area 115 may be provided on the planarization layer 114.
  • the pixel defining layer 115 may be formed by various techniques, such as inkjet printing, screen printing, lamination, spin coating, and the like.
  • the pixel defining layer 115 may be made of an organic insulating material or an inorganic insulating material, such as acrylic resin, silicon oxide, silicon nitride, styrene-propylene cyclobutene, or the like.
  • the sub-pixel is formed at the opening of the pixel defining layer 115 and includes a first electrode, an organic light-emitting layer, and a second electrode.
  • the sub-pixel 240 shown in FIG. 3A includes a first electrode 211, an organic light-emitting layer 212, and a second electrode 213.
  • the first electrode 211 may be an anode electrode
  • the second electrode 213 may be a cathode electrode.
  • the first electrode 211 contacts the drain electrode 203 of the driving transistor T2 through a contact hole formed by removing the planarization layer 114, is exposed through the opening, and contacts the organic light emitting layer 212.
  • the first electrode 211 may be made of metal, metal alloy, conductive metal oxide, transparent conductive material, or the like.
  • the organic light emitting layer 212 may be disposed on the first electrode 211, and the organic light emitting layer 212 may be a small molecule type or a polymer type.
  • the polymer type has only one layer, and the small molecule type has a multi-layer structure.
  • the organic light-emitting layer of the small molecule type structure may include an electron injection layer (Electron Injection), an electron transport layer (Electron Transport), and a light-emitting layer. (Emission), hole transport layer (Hole Transport) and hole injection layer (Hole Injection), etc.
  • the cathode injects electrons into the electron injection layer, and the electrons enter the electron transport layer through the electron injection layer.
  • the anode injects holes into the hole injection layer, and the holes pass through the hole injection layer to reach the hole transport layer. After the electrons and holes reach the light-emitting layer, they form an electron-hole pair and emit light.
  • the embodiment of the present application does not limit the type of the organic light-emitting layer.
  • the second electrode 213 is disposed on the organic light-emitting layer 212 and may be made of metal, metal alloy, conductive metal oxide, or transparent conductive material.
  • the first electrode 211 and the second electrode 213 may use different materials in different situations.
  • the second electrode 213 may be made of a transparent conductive material (for example, indium zinc oxide IZO or indium tin oxide ITO).
  • the first electrode 211 may be made of an opaque conductive material (for example, silver Ag or ITO/Ag/ITO). In this way, the light generated in the organic light emitting layer 212 will be emitted through the second electrode 213.
  • the advantage of the top light is that the light is not blocked by the drive circuit.
  • the TFE thin film encapsulation layer 230 may be disposed on the light-emitting front plate, covering the AMOLED core layer 250.
  • TFE film packaging technology is a technology that stacks an inorganic layer and an organic layer on the light-emitting front plate to prevent oxygen and moisture from entering.
  • the TFE thin film encapsulation layer 230 can be applied to a AMOLED display that is foldable and bendable.
  • the TFE thin film encapsulation layer 230 may be composed of an organic encapsulation layer and at least one inorganic encapsulation layer.
  • the inorganic encapsulation layer can be used to isolate oxygen and moisture, but the properties of the inorganic encapsulation layer are not uniform.
  • an organic encapsulation layer can be provided on the inorganic encapsulation layer to stabilize the inorganic inorganic encapsulation layer.
  • the TFE thin film encapsulation layer can be produced by low temperature atomic layer deposition (ALD) or inductively coupled plasma enhanced chemical vapor deposition (ICP-CVD).
  • the TFE thin film encapsulation layer 230 in FIG. 3A is composed of a first inorganic encapsulation layer 116, an organic encapsulation layer 117, and a second inorganic encapsulation layer 118.
  • the first inorganic encapsulation layer 116 covers the light-emitting front plate 252 and is made of an inorganic material (for example, silicon oxide SiO2).
  • the organic encapsulation layer 117 is disposed above the first inorganic encapsulation layer 116, and may be made of polyethylene terephthalate (PET), polyoxymethylene (Polyoxymethylene), or other materials.
  • PET polyethylene terephthalate
  • Polyoxymethylene Polyoxymethylene
  • the second inorganic encapsulation layer 118 may be composed of materials such as silicon oxide (SiO2), silicon nitride (SiNx), and the like. It should be noted that the TFE thin film encapsulation layer shown in the embodiments of the present application is only exemplary, and the TFE thin film encapsulation layer may also be formed by superposing 11 inorganic encapsulation layers and organic encapsulation layers. With the development of technology, the TFE thin film encapsulation layer may also be composed of a layer of material. The embodiment of the present application does not limit the structure of the TFE thin film encapsulation layer.
  • a dam 221 may be provided on the intermediate insulating layer 113.
  • the material of the dam 211 may be the same as the planarization layer 114.
  • the material of the dam 211 may also be consistent with the pixel defining layer 115.
  • the first inorganic encapsulation layer 116 and the second inorganic encapsulation layer 118 are connected near the dam 221 and cover the dam 221. Therefore, when fabricating the organic encapsulation layer 117, the dam 221 can prevent the organic material of the organic encapsulation layer from flowing out of the substrate 110.
  • the dam 221 can be used to increase the penetration distance between the display edge and the organic light-emitting layer or the metal electrode layer to ensure the sealing performance. There may be one dam 221 or multiple dams.
  • the AMOLED display screen has a certain width of no display area.
  • Micro LED display technology is to thin, miniaturize, and array the design of traditional inorganic LED structures.
  • the size of a single Micro LED device is only about 1 ⁇ 10 ⁇ m.
  • After making the Micro LED device connect it to the TFT drive circuit, and control the single Micro LED device to emit light through the TFT drive circuit.
  • MicroLED has the characteristics of high brightness, super high resolution and high luminous efficiency. More importantly, Micro LED devices will not be affected by water vapor and oxygen.
  • Micro LED display is still facing several problems from mass production, such as how to reduce the existing millimeter-level LED devices to only 1% of the original size, and how to transfer the manufactured large number of Micro LED devices to the TFT drive backplane , So that each Micro LED device can be connected to a TFT drive circuit. Especially for the latter problem, no suitable method has been found under the prior art.
  • FHD Full High Definition
  • Micro LED display technology In the case of using Micro LED display technology to manufacture the display screen, it is necessary to fabricate about seven million (2160*1080*3) Micro LED devices, and then transfer the manufactured approximately seven million Micro LED devices to the TFT driver On the backplane, each Micro LED device needs to be accurately connected to a TFT drive circuit, which poses a huge challenge to the process. At the same time, it is necessary to check whether seven million Micro LED devices can emit light before transferring Micro LED devices. After the Micro LED device is transferred, it is necessary to repair or replace the Micro LED device that cannot emit light normally, which brings huge cost to the production of the Micro LED display. Therefore, in the field of smart phones, Micro LED displays do not yet have the capability of mass production.
  • An embodiment of the present application describes a display screen, wherein the display screen is divided into a display area and a bezel area.
  • the display area adopts AMOLED display technology, and a limited number of Micro LED devices and driving circuits are placed in the bezel area.
  • the frame area can also display content, which greatly reduces the package area without display.
  • FIG. 18 shows a mobile phone using the display screen shown in the embodiment of the present application. Compared with the front surface of the mobile phone shown in FIG. 1A, the area of the area without a display area in the front surface area of the mobile phone is significantly reduced.
  • the embodiment of the present application relates to a Micro LED device, including a P-N diode. It can be understood that other micro semiconductor devices can also be arranged in the same manner.
  • Micro Light Emitting Diode (Micro LED) display technology is to thin, miniaturize and array the LED structure design.
  • the size of a single Micro LED device is only about 1 ⁇ 10 ⁇ m level.
  • the huge amount of addressing is transferred to the circuit substrate to form a display screen with ultra-small pitch LEDs.
  • This display screen has ultra-high pixels and ultra-high resolution.
  • Micro LED display technology can theoretically produce screens of various sizes. However, due to the bottleneck of the mass transfer technology, Micro LED technology has not yet reached the capacity of mass production.
  • the Micro LED device is not affected by water vapor and oxygen, and the Micro LED device is arranged in the border area of the AMOLED display screen, replacing the dam structure, to prevent external moisture and oxygen from entering from the side of the AMOLED display screen. Glowing front panel. Because Micro LED devices can be used to display images, this method of making the display screen can effectively reduce the area of the display screen that cannot display the picture. At the same time, the number of Micro LED devices required to cover the border area is relatively small, and does not involve the technical problems of mass transfer.
  • Micro LED technology has a variety of full-color display methods, such as RGB three-color method, UV/blue light method and optical lens synthesis method.
  • the RGB three-color method is based on the principle of RGB three primary colors, through the Micro LED device that emits red light, the Micro LED device that emits blue light, and the Micro LED device that emits green light, to synthesize various colors. This is the main method currently adopted for LED screens.
  • the UV/blue light method refers to matching a red or green luminescent medium with a blue-emitting Micro LED device to cause the blue-light Micro LED device to emit red or green light.
  • Luminescent media can generally be divided into phosphors and quantum dots.
  • Phosphors can be sulfides, aluminates, oxides, silicates, nitrides and other materials, which emit light of a specific wavelength under the excitation of blue LED devices.
  • Phosphor particle size can be from 100nm to 1 ⁇ m, and quantum dots are a kind of nanoparticles, which can emit different colors of light when excited by light.
  • the following embodiments adopt the RGB three-color display method. It can be understood that the embodiments of the present application are also applicable to other display methods.
  • the setting of physical pixels in the frame area needs to refer to the frame width, pixel density, and the size of the Micro LED device.
  • each Micro LED pixel is respectively placed with three Micro LED devices such as a Red Micro LED device, a Blue Micro LED device, and a Green Micro LED device.
  • a pixel can display white light or any color light.
  • each Micro LED pixel can be placed with two Micro LED devices in a pentile arrangement.
  • the two Micro LED devices can be red Micro LED devices and green Micro LED devices, or blue Micro LED devices. And green Micro LED devices.
  • a virtual pixel emits light, it needs at least three colors of red, green, and blue, so when each Micro LED pixel displays a virtual pixel, it needs to borrow the red Micro LED device or Bluetooth Micro LED device contained in the adjacent Micro LED pixel. .
  • FIG. 8A-1 shows a pentile arrangement
  • FIG. 8A-2 shows an RGB arrangement, where each pixel in the pentile arrangement includes two subpixels, and each pixel in the RGB arrangement Consists of three sub-pixels.
  • the pixel 810 includes a red subpixel 801 and a green subpixel 802
  • the pixel 820 includes a blue subpixel 803 and a green subpixel 804
  • the pixel 830 includes a red subpixel 805, a green subpixel 806, and a blue subpixel 807.
  • the blue sub-pixel 803 in the pixel 820 needs to be borrowed. At this time, the red sub-pixel 801, the green sub-pixel 802 in the pixel 810, and the blue sub-pixel 803 in the pixel 820 emit light together. A white light virtual pixel is displayed.
  • the advantage of this method is to reduce the number of sub-pixels when the same resolution is achieved.
  • a pixel in the embodiment of the present application may include different numbers of sub-pixels, and different arrangements of the sub-pixels may also be adopted, such as red-green-blue-yellow, red-green-blue-yellow-cyan, red-green-blue-white, and so on.
  • the arrangement manner of the sub-pixels shown in the embodiments of the present application is only exemplary.
  • FIG. 5 shows a plan view of an AMOLED display screen according to an embodiment of the present application. Similar to the AMOLED display 200 shown in FIG. 1, the AMOLED display shown in FIG. 5 also includes a display area 102 and a frame area 101. The difference is that the frame area 101 shown in FIG. 5 includes multiple pixels, and each pixel includes There are two sub-pixels, and each sub-pixel is a Micro LED device, which can emit one of red light, blue light or green light. For example, the pixel 510 may include sub-pixels 511 and 512.
  • the sub-pixel 511 may emit red light, and the sub-pixel 512 may emit green light. In other embodiments, the sub-pixel 511 may emit blue light, and the sub-pixel 512 may emit green light. Since the frame area 101 shown in FIG. 5 is provided with Micro LED pixels, it can display the screen content, but still borrows the concept of the frame in the prior art. Therefore, in the new AMOLED screen shown in FIG. 5, the area 101 is still called Is the border area.
  • FIG. 6 is a cross-sectional view taken along line E-F of FIG. 5, wherein the Micro LED device adopts a passive matrix driving method (Passive Matrix).
  • the display area 102 of the display screen shown in FIG. 6 includes a driving circuit backplane, a light-emitting front panel, and a TFE encapsulation layer.
  • the bezel area 101 of the display screen shown in FIG. 6 is provided with a Micro LED device, which not only functions as a dam structure, but also can display a graphical user interface.
  • the Micro LED device 500 shown in FIG. 6 may be a vertical Micro LED structure as shown in FIG. 7. It should be noted that the structure of the Micro LED device shown in FIG. 6 is only an example. Depending on the driving method, the Micro LED device may also be a flip-chip type, which will be explained in detail below.
  • the Micro LED device 500 may include a top electrode 511, a bottom electrode 512, and a pn diode, where the pn diode may include an n-doped layer 523 and a p-doped layer layer) 521 and quantum well layers (quantum well layers) 522, the quantum well layer may be one or more layers.
  • the p-type doped layer 521 is located above the n-type doped layer 523. In other embodiments, the n-type doped layer 523 may be located above the p-type doped layer 521.
  • the top electrode 511 and the bottom electrode 512 may be composed of various conductive materials including metals, conductive oxides, and conductive polymers.
  • the top electrode 511 may be in contact with the fourth electrode 502, and the bottom electrode 512 may be bonded to the third electrode 501 through the bonding layer 513.
  • the bonding layer 513 may be composed of solder materials such as tin, indium, or alloys thereof.
  • FIG. 11 shows a flip-chip Micro LED device. Similar to the Micro LED device shown in FIG. 7, the Micro LED device shown in FIG. 11 includes a top electrode 511, a bottom electrode 512, and a p-n diode.
  • the p-n diode may include an n-doped layer (523), a p-doped layer (521), and a quantum well layer (522).
  • the top electrode 511 and the bottom electrode 512 of the Micro LED device 500 shown in FIG. 11 are both located at the bottom and connected to the bonding layer 513.
  • the n-doped layer 523 is in contact with one electrode through the bottom electrode 512 and the bonding layer 513, such as the third electrode 501 shown in FIG.
  • the p-doped layer 521 is in contact with another electrode through the top electrode 511 and the bonding layer 513, such as the fourth electrode 502 shown in FIG.
  • the advantage of the flip-chip Micro LED device is that the third electrode and the fourth electrode can be set on the same plane, so that the third electrode and the fourth electrode can be manufactured at the same time, without the need to be manufactured separately, reducing the difficulty of the manufacturing process.
  • the third electrode and the fourth electrode connected to the Micro LED device can be set at different places in the frame area of the AMOLED display screen according to the process and requirements.
  • the third electrode 501 shown in FIG. 6 may be disposed on the intermediate insulating layer 113.
  • the third electrode 501 may also be disposed on the gate insulating layer 112 and exposed through the middle insulating layer 113 to be in contact with the Micro LED device 500.
  • the Micro LED device 500 may be fixed on the third electrode 501 through the bonding layer 513.
  • the passivation layer 119 may cover the third electrode 501 and the Micro LED device 500, and insulate the bottom electrode connected to the Micro LED device 500 and the top electrode connected to the Micro LED device 500. In addition, the passivation layer 119 may also insulate the side wall of the Micro LED device 500 from the top electrode or the bottom electrode. In some embodiments, after the Micro LED device 500 is installed, the passivation layer 119 may be formed. Alternatively, the passivation layer 119 may completely cover the Micro LED device 500 and the third electrode 501 first. Then, a through hole is formed in the passivation layer 119 to expose the Micro LED device 500. The specific manufacturing method will be described in detail below.
  • the Micro LED device 500 may protrude above the passivation layer, and the passivation layer residue of the top electrode of the Micro LED device 500 is removed by etching, and then the fourth electrode 502 is fabricated to connect with the Micro LED device 500.
  • the fourth electrode 502 shown in FIG. 6 may be disposed above the passivation layer 119, and the gap formed by the passivation layer 119 is in contact with the exposed Micro LED device 500.
  • the third electrode 501 and the fourth electrode 502 may use different materials in different situations.
  • the third electrode 501 may be made of a transparent conductive material (for example, indium zinc oxide IZO or indium tin oxide ITO).
  • the fourth electrode 502 may be made of an opaque conductive material (for example, silver Ag or ITO/Ag/ITO).
  • the third electrode 501 may be used as a cathode, and the fourth electrode 502 may be used as an anode, respectively connected to a driver IC, which is a driver LED of a Micro LED.
  • an LS light-shield layer 120 may be provided on the third electrode 501.
  • the LS light-shielding layer 120 has an insulating function, and can absorb light from the bottom of the Micro LED device 500 or side light leakage to reduce crosstalk between LED pixels.
  • FIG. 15 shows a schematic diagram of another embodiment adopting a passive matrix driving method.
  • the frame area 101 of the display screen 200 shown in FIG. 15 is provided with Micro LED devices, the third electrode 501 is provided on the intermediate insulating layer 113, and the Micro LED device is provided on the third electrode 501
  • the fourth electrode 502 is provided on the passivation layer 119.
  • the planarization layer 114 in the display screen 200 shown in FIG. 15 extends to the frame area and covers the third electrode 501.
  • the third electrode 501 is exposed by removing a part of the planarization layer 114 and then connected to the Micro LED device 500.
  • FIG. 8B is a schematic diagram of the arrangement order of the Micro LED devices in the frame area of the display screen according to an embodiment of the present application.
  • the Micro LED device adopts a passive matrix driving method, and a plurality of third electrodes 501 and a plurality of fourth electrodes 502 are respectively connected to the Micro LED driver IC (not shown in the figure).
  • the third electrode 501 can be understood as a layer of electrodes, and one electrode of a plurality of Micro LED devices is in contact with the electrode layer.
  • the fourth electrode 502 can also be understood as a layer of electrodes.
  • the arrangement of Micro LED devices in the bezel area adopts a pentile form.
  • the pixel 702 includes a red subpixel and a green subpixel
  • the pixel 701 includes a blue subpixel and a green subpixel.
  • the sub-pixels located on the fourth electrode 502 are alternately arranged in two orders of blue-green-blue-green and red-green-red-green.
  • the arrangement of the red, green, and blue pixels shown in FIG. 8B is only exemplary.
  • the sub-pixels located on the fourth electrode 502 are arranged in the order of red-green-blue-green from left to right. This sort of arrangement can prevent red pixels or blue pixels from forming vertical lines and improve display quality.
  • the arrangement of the Micro LED devices in the frame area may be in the form of Bayer.
  • FIG. 10 shows another cross-sectional view taken along line C-D of FIG. 5, in which the Micro LED device has a flip-chip structure as shown in FIG. 11, and uses an active matrix driving (Active Matrix) method to drive light emission.
  • Active Matrix Active Matrix
  • the bezel area 101 is also provided with a TFT drive circuit for controlling the Micro LED device.
  • a TFT drive circuit may include the transistor T3 and the transistor T4 in FIG.
  • the embodiment shown in FIG. 10 may use a 2T1C pixel driving circuit to drive the Micro LED device to emit light.
  • the planarization layer 114 extends to the frame area 101. The advantage of this method is that the planarization layer 114 can provide a flat surface for the Micro LED device, and the process of making the electrode is simpler.
  • the Micro LED device shown in FIG. 10 uses the flip-chip Micro LED device shown in FIG. 11 and is connected to two electrodes.
  • the Micro LED device 500 shown in FIG. 10 is connected to the third electrode 501 and the fourth electrode 502, wherein the Micro electrode bottom electrode 512 shown in FIG. 11 is in contact with the third electrode 501, and the Micro LED device top electrode 511 is connected to The fourth electrode 502 is in contact.
  • all Micro LED devices can be connected to the same fourth electrode 502.
  • the fourth electrode 502 may be an anode.
  • both the third electrode 501 and the fourth electrode 502 are disposed on the passivation layer 119.
  • the advantage of using a flip-chip Micro LED device is that when the third electrode and the fourth electrode are made, they can be made at the same time as the first electrode, which reduces the difficulty of making the display screen.
  • the third electrode 501 and the fourth electrode 502 may be constructed of ITO/Ag/ITO, and the manufacturing process is consistent with the first electrode 211. As shown in FIG. 10, the third electrode 501 is in contact with the drain electrode in the drive transistor in the 2T1C drive circuit by removing the contact hole formed by the passivation layer 119 and the planarization layer 114. For example, the third electrode 501 connected to the Micro LED device 500 shown in FIG. 10 is in contact with the drain electrode of the transistor T4.
  • the TFE thin film packaging structure 230 covers the Micro LED device 500.
  • the third electrode 501 and the fourth electrode 502 shown in FIG. 10 may be covered with an LS light-shielding layer (not shown in the figure).
  • the Micro LED devices shown in FIG. 10 can be arranged in the RGBG manner shown in FIG. 8B. It can be understood that the embodiments of the present application do not limit the arrangement of the Micro LED devices.
  • the planarization layer 114 in the display screen 200 does not extend to the frame area 101, and the third electrode 501 contacts the transistor T4 through a contact hole formed by removing a portion of the passivation layer 119.
  • the advantage of this method is that there is no need to change the existing process of making the passivation layer.
  • Figure 12 shows a Micro LED device active drive circuit connection.
  • Figure 12 shows three dashed boxes, each box is a drive circuit, used to drive a Micro LED device to emit light. It should be understood that the driving circuit connection modes of the three Micro LED devices shown in FIG. 12 are only exemplary, and this connection mode can be used for driving circuit connection of all Micro LED devices.
  • each drive circuit includes two transistors and a capacitor.
  • One of the transistors is a switching transistor, and the other is a driving transistor.
  • T3 can be a switching transistor, and T4 can be a driving crystal.
  • T4 can be a driving crystal.
  • the Micro LED device shown in FIG. 12 is connected to the drive transistor and the positive voltage VDD.
  • all Micro LED devices are commonly connected to an electrode that transmits a positive voltage VDD, such as the fourth electrode 502 shown in FIG. 10.
  • the source electrode of the drive transistor is connected to the negative voltage VSS.
  • the dimming method can use pulse width modulation (PWM).
  • the advantage of this circuit connection method is that it can partially utilize the OLED drive circuit.
  • the scan signal Vscan connected to the switching transistor shown in FIG. 12 can be selected using the gate drive circuit of the AMLOED screen, and the gate drive circuit can use an integrated gate drive circuit (Gate driver On Arry, GOA) to convert the gate
  • GOA Gate driver On Arry
  • the drive circuit is integrated on the drive backplane.
  • the advantage of this method is that the cost can be reduced from two aspects of material cost and manufacturing process.
  • the Vdata signal can be output by the Micro LED driver IC. In this way, it is not necessary to separately provide a circuit for driving the output scan signal Vscan of the Micro LED device.
  • the manufacturing of the third electrode and the fourth electrode connected to the LED device in the frame area Micro can use the existing AMOLED display processing technology.
  • the fourth electrode 502 shown in FIG. 6, the third electrode and the fourth electrode shown in FIG. 10 can all be manufactured by the processing process of the first electrode 211. The specific description will be made below with reference to FIG. 13.
  • FIG. 13 shows a manufacturing process of the first electrode 211.
  • the first electrode 211 may be made of ITO/Ag/ITO thin film material.
  • the manufacturing method of the ITO/Ag/ITO thin film material is to sequentially coat an ITO layer, an Ag layer and an ITO layer on the passivation layer 119, and then form an ITO/Ag/ITO thin film material, in which ITO is a transparent layer and Ag is opaque Floor.
  • the fourth electrode 502 needs to be made of a transparent material. Therefore, when forming the Ag layer, a photomask can be added above the frame area 101, and only the ITO layer remains.
  • the conductive material plated on the display area 102 is ITO/Ag/ITO thin film material
  • the conductive material plated on the frame area 101 is ITO thin film material.
  • S1402 plating photosensitive material on the conductive material.
  • the photosensitive material can be a photoresist, which will dissolve when exposed to light.
  • the circuit pattern of the first electrode 221 can be added to the photomask, and through exposure, the circuit pattern of the first electrode 221 is displayed on the photosensitive material, where the illuminated area needs to be removed and needs to be retained The circuit is blocked by the photomask and not exposed to light.
  • a circuit pattern of the first electrode 221 and the fourth electrode 502 shown in FIG. 6 may be added on the photomask. After exposure, the circuit patterns of the first electrode 211 and the fourth electrode 502 are displayed.
  • the circuit patterns of the first electrode 221, the third electrode 501, and the fourth electrode 502 shown in FIG. 10 may be added to the photomask. After exposure, The circuit patterns of the first electrode 211, the third electrode 501, and the fourth electrode 502 are displayed.
  • the conductive material remaining in the circuit pattern area is etched, and then the photosensitive material is removed to obtain an electrode.
  • the electrodes include the first electrode 221 and the fourth electrode 502 shown in FIG. 6.
  • the electrodes include the first electrode 221, the third electrode 501, and the fourth electrode 502 shown in FIG.
  • the third electrode 501 shown in FIG. 6 may be manufactured using a TFT driving circuit backplane processing process. The specific description will be made below with reference to FIG. 14.
  • FIG. 14 shows a method of manufacturing a TFT drive circuit backplane.
  • a polysilicon layer is formed on the buffer layer, and a semiconductor layer is formed through a patterning process.
  • An inorganic material such as silicon oxide is deposited on the entire surface of the semiconductor layer to form a gate insulating layer.
  • a metal layer may be deposited on the gate insulating layer through a sputtering process, and then processed through a patterning process to form a gate electrode.
  • a patterning process refer to the electrode processing process shown in FIG. 13.
  • the third electrode 501 can be simultaneously formed when forming the gate electrode, and the third electrode 501 is located on the gate insulating layer.
  • An inorganic material such as silicon oxide is deposited on the gate electrode to form an intermediate insulating layer.
  • S1505 forming a source electrode and a drain electrode.
  • the semiconductor layer is exposed by etching on the intermediate insulating layer and the gate insulating layer.
  • a metal layer is deposited on the intermediate insulating layer, and a source electrode and a drain electrode are formed through a patterning process.
  • the third electrode 501 can also be completed in this step.
  • the third electrode 501 can be formed simultaneously with the formation of the source electrode and the drain electrode.
  • the third electrode 501 is located on the intermediate insulating layer.
  • the Micro LED device is insensitive to water vapor, and is placed in the frame area of the AMOLED screen to replace the dam structure used to block water vapor, thereby realizing the effect of full-screen display. Moreover, there are not many Micro LED devices that need to be transferred in the frame area, which effectively avoids the difficulty of mass transfer.
  • the manufacturing method of the Micro LED area can be completed by using the existing AMOLED screen manufacturing technology to reduce the manufacturing difficulty as much as possible.

Abstract

本申请提供了一种显示屏，电子设备和显示屏制作方法，该显示屏包括：基板；驱动电路背板，包括多个驱动电路单元，所述驱动电路背板设置在所述基板上方；第一像素层，包括多个像素，所述第一像素层的每个像素包括多个子像素，所述第一像素层的每个子像素包括一个有机发光二极管OLED器件，其中，所述第一像素层设置在所述驱动电路背板上方，所述第一像素层的每个子像素的OLED器件与所述驱动电路背板中的至少一个驱动电路单元连接；第二像素层，包括第一电极层，第二电极层以及设置在所述第一电极层和所述第二电极层之间的多个像素，所述第二像素层的每个像素包括多个子像素，所述第二像素层的每个子像素包括一个微型发光二极管Micro LED器件，其中，所述第二像素层设置在所述基板上方，围绕所述第一像素层。该显示屏具有更窄的边框。

Description

一种显示屏，电子设备及显示屏制造方法 技术领域
本申请涉及显示屏领域，尤其涉及Micro LED、AMOLED技术。
背景技术
有源矩阵有机发光二极管(Active-matrix Organic Light Emitting Diode，AMOLED)显示技术是有机发光二极管(Organic Light Emitting Diod，OLED)领域中应用最广的分支。AOLED显示屏采用独立的薄膜晶体管TFT驱动控制单元去控制AMOLED显示屏中的每个OLED像素发光。由于OLED像素采用的有机发光材料对氧气和水汽特别敏感，为了避免有机发光材料遇水及空气后氧化使AOLED显示屏性能迅速下降，AMOLED显示屏四周存在一定宽度的封装层，即边框。现有技术中边框区域没有显示单元，无法显示画面内容。因此，如何缩小AMOLED显示屏的无显示区域成为一个重要问题。
发明内容
为解决上述技术问题，本申请实施例提供了一种显示屏、所述显示屏的制作方法和使用所述显示屏的电子设备。所述技术方案如下：
第一方面，本申请实施例提供了一种显示屏，包括：基板，用于承载上述显示屏的元器件；驱动电路背板，包括多个驱动电路单元，上述驱动电路背板设置在上述基板上方；第一像素层，包括多个像素，上述第一像素层的每个像素包括多个子像素，上述第一像素层的每个子像素包括一个有机发光二极管OLED器件，其中，上述第一像素层设置在上述驱动电路背板上方，上述第一像素层的每个子像素的OLED器件与上述驱动电路背板中的至少一个驱动电路单元连接；第二像素层，包括第一电极层，第二电极层以及设置在上述第一电极层和上述第二电极层之间的多个像素，上述第二像素层的每个像素包括多个子像素，上述第二像素层的每个子像素包括一个微型发光二极管Micro LED器件，其中，上述第二像素层设置在上述基板上方，围绕上述第一像素层，且上述第二像素层的面积小于上述第一像素层的面积。这种方式的好处在于，有利于缩小上述显示屏的无显示区域。
结合第一方面，上述显示屏上方还可以设置触敏表面。
在一种可能的实现方式中，上述Micro LED器件为垂直型Micro LED器件，上述垂直型Micro LED器件包括顶部电极和底部电极，其中，上述第二电极层在上述第一电极层上方，上述垂直型Micro LED器件的底部电极与上述第一电极层连接，上述垂直型Micro LED器件的顶部电极与上述第二电极层连接。这种方式的好处在于，上述垂直型Micro LED器件连接的两个电极层可以分开制作，降低制作工艺难度。
在一种可能的实现方式中，上述第二像素层还包括钝化层，上述钝化层设置于上述第一电极层和上述第二电极层之间，且覆盖上述垂直型Micro LED器件。这种方式的好处在于，钝化层可以隔离上述第一电极层和上述第二电极层，同时，也可以隔离不同的垂直型Micro LED器件。
在一种可能的实现方式中，其中上述钝化层在上述垂直型Micro LED器件的顶部电极 上方设置有开口，上述顶部电极通过上述开口与上述第二电极层连接。这种方式的好处在于，上述垂直型Micro LED器件只需准确放置在上述第一电极层上，不需要考虑上述第二电极层的位置。
结合第一方面，上述钝化层可以设置在上述第一电极层上，上述垂直型Micro LED器件通过冲压方式与上述第一电极层连接。
结合第一方面，上述第一电极层制作好后，可以将上述垂直型Micro LED器件通过键合方式与上述第一电极层连接，然后制作上述钝化层，覆盖上述垂直型Micro LED器件。这种方式的好处在于，上述垂直型Micro LED器件与上述第一电极层安装的过程更加简单。
在一种可能的实现方式中，每个驱动电路单元包括多个晶体管，上述驱动电路背板的所有晶体管的源极和漏极组成第三电极层，上述驱动电路背板的所有晶体管的栅极组成第四电极层，上述第一电极层与上述第三电极层或上述第四电极层位于同一层。这种方式的好处在于，上述第一电极层的制作可以利用现有工艺和设备，不需要单独设计。
在一种可能的实现方式中，上述第一电极与电源的正电压连接，上述第二电极与电源的负电压连接。这种方式的好处在于，上述第一电极可以与第一像素层共用提供正电压的电路。
在一种可能的实现方式中，上述第二像素层的子像素排列方式为Pentile排列或Bayer排列。这种方式的好处在于，每个像素只需要设置两个子像素，减少了子像素的数量。
在一种可能的实现方式中，上述显示屏还包括薄膜封装层，上述薄膜封装层设置于上述第二电极上方，覆盖上述第二电极，或，上述显示屏还包括遮光层，上述遮光层设置于上述驱动电路背板上方，覆盖上述第一电极层，或，上述垂直型Micro LED器件包括n型掺杂层和p型掺杂层，上述n型掺杂层与上述垂直型Micro LED器件顶部电极连接，上述p型掺杂层与上述垂直型Micro LED器件底部电极连接，或，上述第一电极层为不透明电极层，上述第二电极层为透明电极层。
第二方面，本申请实施例提供了一种显示屏，包括：基板，用于承载上述显示屏的元器件；驱动电路背板，包括多个驱动电路单元，上述驱动电路背板设置在上述基板上方；第一像素层，包括多个像素，上述第一像素层的每个像素包括多个子像素，上述第一像素层的每个子像素包括一个有机发光二极管OLED器件，其中，上述第一像素层设置在上述驱动电路背板上方，上述第一像素层的每个子像素的OLED器件与上述驱动电路背板中的至少一个驱动电路单元连接；第二像素层，包括多个像素，上述第二像素层的每个像素包括多个子像素，上述第二像素层的每个子像素包括一个微型发光二极管Micro LED器件，其中，上述第二像素层设置在上述驱动电路背板上方，围绕上述第一像素层，且上述第二像素层的面积小于上述第一像素层的面积，上述第二像素层的每个子像素的Micro LED器件与上述驱动电路背板中的至少一个驱动电路单元连接。这种方式的好处在于，有利于缩小上述显示屏的无显示区域。
结合第一方面，上述显示屏上方还可以设置触敏表面。
在一种可能的实现方式中，上述Micro LED器件为倒装型Micro LED器件，上述倒装型Micro LED器件包括P极和N极，上述P极和N极位于上述倒装型Micro LED器件同一侧。这种方式的好处在于，P极和N极位于同一层，可以一起制作。
在一种可能的实现方式中，上述倒装型Micro LED器件的P极或N极与至少一个驱动电路单元连接。
在一种可能的实现方式中，上述显示屏还包括薄膜封装层，上述薄膜封装层覆盖上述第一像素层和上述第二像素层。这种方式的好处在于，薄膜封装层是柔性的，可以使上述显示屏保持柔性。
在一种可能的实现方式中，上述驱动电路单元为2T1C驱动电路单元或5T1C驱动电路单元。这种方式的好处在于，5T1C驱动电路单元可以使上述倒装型Micro LED器件发光更加稳定均匀。
结合第二方面，上述驱动电路单元可以是4T2C驱动电路单元。
在一种可能的实现方式中，上述倒装型Micro LED器件的驱动电路单元与电源的负电压连接，上述倒装型Micro LED器件的P极与电源的正电压连接。这种方式的好处在于，P极可以与上述第一像素层共用提供正电压的电路。
在一种可能的实现方式中，上述第二像素层的子像素排列方式为Pentile排列或Bayer排列。这种方式的好处在于，每个像素只需要设置两个子像素，减少了子像素的数量。
在一种可能的实现方式中，上述倒装型Micro LED器件通过键合方式与上述驱动电路单元连接，或，上述薄膜封装层包括第一无机封装层，第二有机封装层和第三无机封装层，或，上述显示屏还包括钝化层，上述钝化层设置于上述驱动电路背板上方，上述第一像素层和上述第二像素层的下方，或，上述显示屏还包括平坦化层，上述平坦化层设置于驱动电路背板上方，上述第一像素层和上述第二像素层的下方，或，上述显示屏还包括遮光层，上述遮光层设置于上述驱动电路背板上方，覆盖上述第一电极层，或，上述第一电极层和上述第二电极层为不透明电极层。
第三方面，本申请提供一种电子设备，包括显示屏和电池；上述显示屏包括：基板，用于承载上述显示屏的元器件；驱动电路背板，包括多个驱动电路单元，上述驱动电路背板设置在上述基板上方；第一像素层，包括多个像素，上述第一像素层的每个像素包括多个子像素，上述第一像素层的每个子像素包括一个有机发光二极管OLED器件，其中，上述第一像素层设置在上述驱动电路背板上方，上述第一像素层的每个子像素的OLED器件与上述驱动电路背板中的至少一个驱动电路单元连接；第二像素层，包括第一电极层，第二电极层以及设置在上述第一电极层和上述第二电极层之间的多个像素，上述第二像素层的每个像素包括多个子像素，上述第二像素层的每个子像素包括一个微型发光二极管Micro LED器件，其中，上述第二像素层设置在上述基板上方，围绕上述第一像素层，且上述第二像素层的面积小于上述第一像素层的面积；其中，上述驱动电路背板，上述第一电极层和上述第二电极层与上述电池耦合。这种方式的好处在于，有利于缩小上述显示屏的无显示区域。
在一种可能的实现方式中，上述Micro LED器件为垂直型Micro LED器件，上述垂直型Micro LED器件包括顶部电极和底部电极，其中，上述第二电极层在上述第一电极层上方，上述垂直型Micro LED器件的底部电极与上述第一电极层连接，上述垂直型Micro LED器件的顶部电极与上述第二电极层连接。这种方式的好处在于，上述垂直型Micro LED器件连接的两个电极层可以分开制作，降低制作工艺难度。
在一种可能的实现方式中，上述第二像素层还包括钝化层，上述钝化层设置于上述第一电极层和上述第二电极层之间，且覆盖上述垂直型Micro LED器件。这种方式的好处在于，钝化层可以隔离上述第一电极层和上述第二电极层，同时，也可以隔离不同的垂直型Micro LED器件。
在一种可能的实现方式中，其中上述钝化层在上述垂直型Micro LED器件的顶部电极上方设置有开口，上述顶部电极通过上述开口与上述第二电极层连接。这种方式的好处在于，上述垂直型Micro LED器件只需准确放置在上述第一电极层上，不需要考虑上述第二电极层的位置。
结合第三方面，上述钝化层可以设置在上述第一电极层上，上述垂直型Micro LED器件通过冲压方式与上述第一电极层连接。
结合第三方面，上述第一电极层制作好后，可以将上述垂直型Micro LED器件通过键合方式与上述第一电极层连接，然后制作上述钝化层，覆盖上述垂直型Micro LED器件。这种方式的好处在于，上述垂直型Micro LED器件与上述第一电极层安装的过程更加简单。
在一种可能的实现方式中，每个驱动电路单元包括多个晶体管，上述驱动电路背板的所有晶体管的源极和漏极组成第三电极层，上述驱动电路背板的所有晶体管的栅极组成第四电极层，上述第一电极层与上述第三电极层或上述第四电极层位于同一层。这种方式的好处在于，上述第一电极层的制作可以利用现有工艺和设备，不需要单独设计。
在一种可能的实现方式中，上述第一电极与上述电池的正电压连接，上述第二电极与上述电池的负电压连接。这种方式的好处在于，上述第一电极可以与第一像素层共用提供正电压的电路。
在一种可能的实现方式中，上述第二像素层的子像素排列方式为Pentile排列或Bayer排列。这种方式的好处在于，每个像素只需要设置两个子像素，减少了子像素的数量。
在一种可能的实现方式中，上述显示屏还包括薄膜封装层，上述薄膜封装层设置于上述第二电极上方，覆盖上述第二电极，或，上述显示屏还包括遮光层，上述遮光层设置于上述驱动电路背板上方，覆盖上述第一电极层，或，上述垂直型Micro LED器件包括n型掺杂层和p型掺杂层，上述n型掺杂层与上述垂直型Micro LED器件顶部电极连接，上述p型掺杂层与上述垂直型Micro LED器件底部电极连接，或，上述第一电极层为不透明电极层，上述第二电极层为透明电极层，或，上述垂直型Micro LED器件通过键合方式与上述第一电极层连接。
第四方面，本申请提供一种电子设备，包括显示屏和电池；上述显示屏包括：基板，用于承载上述显示屏的元器件；驱动电路背板，包括多个驱动电路单元，上述驱动电路背板设置在上述基板上方，与所述电池耦合；第一像素层，包括多个像素，上述第一像素层的每个像素包括多个子像素，上述第一像素层的每个子像素包括一个有机发光二极管OLED器件，其中，上述第一像素层设置在上述驱动电路背板上方，上述第一像素层的每个子像素的OLED器件与上述驱动电路背板中的至少一个驱动电路单元连接；第二像素层，包括多个像素，上述第二像素层的每个像素包括多个子像素，上述第二像素层的每个子像素包括一个微型发光二极管Micro LED器件，其中，上述第二像素层设置在上述驱动电路背板上方，围绕上述第一像素层，且上述第二像素层的面积小于上述第一像素层的面积， 上述第二像素层的每个子像素的Micro LED器件与上述驱动电路背板中的至少一个驱动电路单元连接。其中，上述驱动电路背板与上述电池耦合。这种方式的好处在于，有利于缩小上述显示屏的无显示区域。
在一种可能的实现方式中，上述Micro LED器件为倒装型Micro LED器件，上述倒装型Micro LED器件包括P极和N极，上述P极和N极位于上述倒装型Micro LED器件同一侧。这种方式的好处在于，P极和N极位于同一层，可以一起制作。
在一种可能的实现方式中，上述倒装型Micro LED器件的P极或N极与至少一个驱动电路单元连接。
在一种可能的实现方式中，上述显示屏还包括薄膜封装层，上述薄膜封装层覆盖上述第一像素层和上述第二像素层。这种方式的好处在于，薄膜封装层是柔性的，可以使上述显示屏保持柔性。
在一种可能的实现方式中，上述驱动电路单元为2T1C驱动电路单元或5T1C驱动电路单元。这种方式的好处在于，5T1C驱动电路单元可以使上述倒装型Micro LED器件发光更加稳定均匀。
结合第四方面，上述驱动电路单元可以是4T2C驱动电路单元。
在一种可能的实现方式中，上述倒装型Micro LED器件的驱动电路单元与上述电池的负电压连接，上述倒装型Micro LED器件的P极与上述电池的正电压连接。这种方式的好处在于，P极可以与上述第一像素层共用提供正电压的电路。
在一种可能的实现方式中，上述第二像素层的子像素排列方式为Pentile排列或Bayer排列。这种方式的好处在于，每个像素只需要设置两个子像素，减少了子像素的数量。
在一种可能的实现方式中，上述倒装型Micro LED器件通过键合方式与上述驱动电路单元连接，或，上述薄膜封装层包括第一无机封装层，第二有机封装层和第三无机封装层，或，上述显示屏还包括钝化层，上述钝化层设置于上述驱动电路背板上方，上述第一像素层和上述第二像素层的下方，或，上述显示屏还包括平坦化层，上述平坦化层设置于驱动电路背板上方，上述第一像素层和上述第二像素层的下方，或，上述显示屏还包括遮光层，上述遮光层设置于上述驱动电路背板上方，覆盖上述第一电极层，或，上述第一电极层和上述第二电极层为不透明电极层。
第五方面，本申请实施例提供了一种显示屏制作方法，包括：提供基板；在上述基板上制作驱动电路背板，上述驱动电路背板包括多个驱动单元和电极层；在上述驱动电路背板包括上述驱动单元的区域上方制作第一像素层，上述第一像素层由有机发光二极管OLED器件组成；在上述驱动电路背板包括电极层的区域上方制作第二像素层，上述第二像素层由微型发光二极管Micro LED器件组成，其中，所述第二像素层围绕所述第一像素层，且所述第二像素层的面积小于所述第一像素层的面积。这种方式的好处在于，电极层可以利用制作驱动电路背板的工艺，简化显示屏的制作工艺。
附图说明
图1A是一种采用AMOLED显示屏的手机正面的示意图。
图1B是根据本申请实施例的一种电子设备的结构图。
图1C是根据本申请实施例的一种AMOLED显示屏的平面图。
图2是根据本申请实施例的一种AMOLED显示屏的横截侧视图。
图3A是根据图2所示的AMOLED显示屏的剖视图。
图3B是根据本申请实施例的一种OLED结构。
图4是根据本申请实施例的一种像素驱动电路的示意图。
图5是根据本申请实施例的一种AMOLED显示屏的平面图。
图6是根据图5所示的AMOLED显示屏的剖视图。
图7是根据本申请实施例的一种Micro LED器件的示意图。
图8A是根据本申请实施例的一种子像素排列方式的示意图。
图8B是根据本申请实施例的一种子像素排列方式的示意图。
图9是根据本申请实施例的另一种子像素排列方式的示意图。
图10是根据本申请实施例的另一种AMOLED显示屏的剖视图。
图11是根据本申请实施例的另一种Micro LED器件的示意图。
图12是根据本申请实施例的另一种像素驱动电路示意图。
图13是根据本申请实施例的一种电极的制作方法。
图14是根据本申请实施例的一种驱动背板的制作方法。
图15是根据本申请实施例的另一种AMOLED显示屏的剖视图。
图16是根据本申请实施例的另一种AMOLED显示屏的剖视图。
图17是根据本申请实施例的另一种AMOLED显示屏的剖视图。
图18是根据本申请实施例的一种手机正面的示意图图。
具体实施方式
下面将结合附图对本申请实施例中的技术方案进行清楚、详尽地描述。
本申请实施例中所使用的术语只是为了描述特定实施例的目的，而并非旨在作为对本申请的限制。如在本申请的说明书和所附权利要求书中所使用的那样，单数表达形式“一个”、“一种”、“所述”、“上述”、“该”和“这一”旨在也包括复数表达形式，除非其上下文中明确地有相反指示。本文所使用的术语“在……上方”、“在……之间”和“在……上”可指一层相对于另一层的相对位置。在另一层上方、或在另一层上、或者键合到另一层，可以是与其它层直接接触，也可以具有一个或多个中间层。一层在多层“之间”可为与该多层直接接触或可具有一个或多个中间层。
在各种实施例中，参照附图进行描述。然而，某些实施例可在不存在这些具体细节中的一个或多个具体细节的情况下或者在与其他已知的方法和配置相结合的情况下被实施。在一些情况下，未对熟知的半导体工艺和制造技术进行特别详细的描述，以免模糊本申请。
本申请实施例中描述的显示屏，可以用在各种电子设备上，例如手机、平板电脑、桌面型、膝上型、笔记本电脑、超级移动个人计算机(Ultra-mobile Personal Computer，UMPC)、手持计算机、上网本、个人数字助理(Personal Digital Assistant，PDA)、可穿戴电子设备、虚拟现实设备等。
像素是影像显示的基本单位，本申请实施例所述的像素有虚拟像素和物理像素，虚拟像素指概念上的色彩块，是影像显示中最小的完整色彩块。物理像素指由子像素构成的子 像素组，根据显示技术不同，一个子像素组可以包含两个子像素、三个子像素或者四个子像素。一个物理像素可以单独显示一个虚拟像素，也可以结合其他子像素或物理像素显示一个虚拟像素。除非特别说明，本申请实施例中的像素指物理像素。
例如，一个Micro LED物理像素可以包括三个子像素，比如包括一个发红光的Micro LED器件、一个发蓝光的Micro LED器件和一个发绿光的Micro LED器件，这三个Micro LED器件组成了一个物理像素。这种物理像素可以单独显示一个虚拟像素。比如，该三个Micro LED器件同时发光时，发红光的Micro LED器件发出红光，发蓝光的Micro LED器件发出蓝光，发绿光的Micro LED器件发出绿光，可以显示一个白色的虚拟像素。
在另一些实施例中，一个Micro LED物理像素可以包括两个子像素，比如该两个子像素可以是为蓝色子像素和绿色子像素，或者是红色子像素和绿色子像素。这种物理像素可以通过借用相邻物理像素中的一个子像素，显示一个虚拟像素。例如一个物理像素包括蓝色子像素和绿色子像素，在显示一个虚拟像素时，可以借用相邻物理像素中的红色子像素，显示一个虚拟像素。
本申请实施例中，子像素的驱动方式包括无源驱动(Passive Matrix)和有源驱动(Active Matrix)。OLED显示屏如果采用有源驱动方式，可以称为AMOLED显示屏，如果采用无源驱动方式，可以称为PMOLED显示屏。无源驱动又被称为被动驱动，以阴极、阳极构成矩阵状，以扫描方式点亮阵列中的子像素，每次扫描都会使子像素瞬间发光。无源驱动的优点在于结构简单，可以有效降低制作成本，缺点在于反应速度慢，很难应用于中型或者大型尺寸的显示屏。同时也会缩短子像素的寿命。有源驱动方式又叫主动驱动方式，指通过TFT驱动电路控制单个像素发光。优点在于需要的驱动电压低，子像素寿命长，缺点在于制作工艺复杂，成本较高。
图1A示出了一种采用AMOLED显示屏的手机正面的平面图。参考图1A，手机正面可以包括显示区域和无显示区域，显示区域指可以显示画面的区域，无显示区域指不能显示画面的区域。摄像头和麦克风可以放置在无显示区域。随着全面屏概念的发展，手机正面的显示区域所占手机正面的比例越来越高。然而AMOLED显示屏采用的OLED有机发光材料是亲水有机材料，遇到水汽和氧气会发生不可逆的光氧化反应，影响OLED有机发光材料的显示性能。同时，水汽和氧气对铝、镁、银等AMOLED显示屏常用的电极材料也有很强的侵蚀作用，因此AMOLED显示屏对隔绝外界水汽和氧气的渗透有极高的要求。现有技术中，AMOLED显示屏有一定宽度的边框区域，用来隔离外界的水汽和氧气。边框区域的存在是因为用来隔离水汽和氧气的封装设计，例如TFE薄膜封装层设计。现有技术中边框区域所使用的封装设计无法放置OLED像素，因此边框区域无法显示画面。即使手机正面全部覆盖AMOLED显示屏，也存在较大面积的无显示区域。
接下来，介绍本申请以下实施例中可以适用的示例性电子设备。
图1B示出了电子设备100的结构示意图。
电子设备100可以包括处理器110，外部存储器接口120，内部存储器121，通用串行总线(universal serial bus，USB)接口130，充电管理模块140，电源管理模块141，电池142，天线1，天线2，移动通信模块150，无线通信模块160，音频模块170，扬声器170A，受话器170B，麦克风170C，耳机接口170D，传感器模块180，按键190，马达191，指示器 192，摄像头193，显示屏194，以及用户标识模块(subscriber identification module，SIM)卡接口195等。其中传感器模块180可以包括压力传感器180A，陀螺仪传感器180B，气压传感器180C，磁传感器180D，加速度传感器180E，距离传感器180F，接近光传感器180G，指纹传感器180H，温度传感器180J，触摸传感器180K，环境光传感器180L，骨传导传感器180M等。
可以理解的是，本申请实施例示意的结构并不构成对电子设备100的具体限定。在本申请另一些实施例中，电子设备100可以包括比图示更多或更少的部件，或者组合某些部件，或者拆分某些部件，或者不同的部件布置。图示的部件可以以硬件，软件或软件和硬件的组合实现。
处理器110可以包括一个或多个处理单元，例如：处理器110可以包括应用处理器(application processor，AP)，调制解调处理器，图形处理器(graphics processing unit，GPU)，图像信号处理器(image signal processor，ISP)，控制器，存储器，视频编解码器，数字信号处理器(digital signal processor，DSP)，基带处理器，和/或神经网络处理器(neural-network processing unit，NPU)等。其中，不同的处理单元可以是独立的器件，也可以集成在一个或多个处理器中。
其中，控制器可以是电子设备100的神经中枢和指挥中心。控制器可以根据指令操作码和时序信号，产生操作控制信号，完成取指令和执行指令的控制。
处理器110中还可以设置存储器，用于存储指令和数据。在一些实施例中，处理器110中的存储器为高速缓冲存储器。该存储器可以保存处理器110刚用过或循环使用的指令或数据。如果处理器110需要再次使用该指令或数据，可从所述存储器中直接调用。避免了重复存取，减少了处理器110的等待时间，因而提高了系统的效率。
在一些实施例中，处理器110可以包括一个或多个接口。接口可以包括集成电路(inter-integrated circuit，I2C)接口，集成电路内置音频(inter-integrated circuit sound，I2S)接口，脉冲编码调制(pulse code modulation，PCM)接口，通用异步收发传输器(universal asynchronous receiver/transmitter，UART)接口，移动产业处理器接口(mobile industry processor interface，MIPI)，通用输入输出(general-purpose input/output，GPIO)接口，用户标识模块(subscriber identity module，SIM)接口，和/或通用串行总线(universal serial bus，USB)接口等。
可以理解的是，本申请实施例示意的各模块间的接口连接关系，只是示意性说明，并不构成对电子设备100的结构限定。在本申请另一些实施例中，电子设备100也可以采用上述实施例中不同的接口连接方式，或多种接口连接方式的组合。
充电管理模块140用于从充电器接收充电输入。其中，充电器可以是无线充电器，也可以是有线充电器。在一些有线充电的实施例中，充电管理模块140可以通过USB接口130接收有线充电器的充电输入。在一些无线充电的实施例中，充电管理模块140可以通过电子设备100的无线充电线圈接收无线充电输入。充电管理模块140为电池142充电的同时，还可以通过电源管理模块141为电子设备供电。
电源管理模块141用于连接电池142，充电管理模块140与处理器110。电源管理模块141接收电池142和/或充电管理模块140的输入，为处理器110，内部存储器121，外部存 储器，显示屏194，摄像头193，和无线通信模块160等供电。电源管理模块141还可以用于监测电池容量，电池循环次数，电池健康状态(漏电，阻抗)等参数。在其他一些实施例中，电源管理模块141也可以设置于处理器110中。在另一些实施例中，电源管理模块141和充电管理模块140也可以设置于同一个器件中。
电子设备100的无线通信功能可以通过天线1，天线2，移动通信模块150，无线通信模块160，调制解调处理器以及基带处理器等实现。
天线1和天线2用于发射和接收电磁波信号。电子设备100中的每个天线可用于覆盖单个或多个通信频带。不同的天线还可以复用，以提高天线的利用率。例如：可以将天线1复用为无线局域网的分集天线。在另外一些实施例中，天线可以和调谐开关结合使用。
移动通信模块150可以提供应用在电子设备100上的包括2G/3G/4G/5G等无线通信的解决方案。移动通信模块150可以包括至少一个滤波器，开关，功率放大器，低噪声放大器(low noise amplifier，LNA)等。移动通信模块150可以由天线1接收电磁波，并对接收的电磁波进行滤波，放大等处理，传送至调制解调处理器进行解调。移动通信模块150还可以对经调制解调处理器调制后的信号放大，经天线1转为电磁波辐射出去。在一些实施例中，移动通信模块150的至少部分功能模块可以被设置于处理器110中。在一些实施例中，移动通信模块150的至少部分功能模块可以与处理器110的至少部分模块被设置在同一个器件中。
调制解调处理器可以包括调制器和解调器。在一些实施例中，调制解调处理器可以是独立的器件。在另一些实施例中，调制解调处理器可以独立于处理器110，与移动通信模块150或其他功能模块设置在同一个器件中。
无线通信模块160可以提供应用在电子设备100上的包括无线局域网(wireless local area networks，WLAN)(如无线保真(wireless fidelity，Wi-Fi)网络)，蓝牙(bluetooth，BT)，全球导航卫星系统(global navigation satellite system，GNSS)，调频(frequency modulation，FM)，近距离无线通信技术(near field communication，NFC)，红外技术(infrared，IR)等无线通信的解决方案。无线通信模块160可以是集成至少一个通信处理模块的一个或多个器件。无线通信模块160经由天线2接收电磁波，将电磁波信号调频以及滤波处理，将处理后的信号发送到处理器110。无线通信模块160还可以从处理器110接收待发送的信号，对其进行调频，放大，经天线2转为电磁波辐射出去。
在一些实施例中，电子设备100的天线1和移动通信模块150耦合，天线2和无线通信模块160耦合，使得电子设备100可以通过无线通信技术与网络以及其他设备通信。所述无线通信技术可以包括全球移动通讯系统(global system for mobile communications，GSM)，通用分组无线服务(general packet radio service，GPRS)，码分多址接入(code division multiple access，CDMA)，宽带码分多址(wideband code division multiple access，WCDMA)，时分码分多址(time-division code division multiple access，TD-SCDMA)，长期演进(long term evolution，LTE)，BT，GNSS，WLAN，NFC，FM，和/或IR技术等。所述GNSS可以包括全球卫星定位系统(global positioning system，GPS)，全球导航卫星系统(global navigation satellite system，GLONASS)，北斗卫星导航系统(beidou navigation satellite system，BDS)，准天顶卫星系统(quasi-zenith satellite system，QZSS)和/或星基增强系统(satellite based  augmentation systems，SBAS)。
电子设备100通过GPU，显示屏194，以及应用处理器等实现显示功能。GPU为图像处理的微处理器，连接显示屏194和应用处理器。GPU用于执行数学和几何计算，用于图形渲染。处理器110可包括一个或多个GPU，其执行程序指令以生成或改变显示信息。
显示屏194用于显示图像，视频等。显示屏194包括显示面板。显示面板可以采用液晶显示屏(liquid crystal display，LCD)，有机发光二极管(organic light-emitting diode，OLED)，有源矩阵有机发光二极体或主动矩阵有机发光二极体(active-matrix organic light emitting diode的，AMOLED)，柔性发光二极管(flex light-emitting diode，FLED)，Miniled，微型发光二极管MicroLed，Micro-oLed，量子点发光二极管(quantum dot light emitting diodes，QLED)等。在一些实施例中，电子设备100可以包括1个或N个显示屏194，N为大于1的正整数。
电子设备100可以通过ISP，摄像头193，视频编解码器，GPU，显示屏194以及应用处理器等实现拍摄功能。
ISP用于处理摄像头193反馈的数据。例如，拍照时，打开快门，光线通过镜头被传递到摄像头感光元件上，光信号转换为电信号，摄像头感光元件将所述电信号传递给ISP处理，转化为肉眼可见的图像。ISP还可以对图像的噪点，亮度，肤色进行算法优化。ISP还可以对拍摄场景的曝光，色温等参数优化。在一些实施例中，ISP可以设置在摄像头193中。
摄像头193用于捕获静态图像或视频。物体通过镜头生成光学图像投射到感光元件。感光元件可以是电荷耦合器件(charge coupled device，CCD)或互补金属氧化物半导体(complementary metal-oxide-semiconductor，CMOS)光电晶体管。感光元件把光信号转换成电信号，之后将电信号传递给ISP转换成数字图像信号。ISP将数字图像信号输出到DSP加工处理。DSP将数字图像信号转换成标准的RGB，YUV等格式的图像信号。在一些实施例中，电子设备100可以包括1个或N个摄像头193，N为大于1的正整数。
数字信号处理器用于处理数字信号，除了可以处理数字图像信号，还可以处理其他数字信号。例如，当电子设备100在频点选择时，数字信号处理器用于对频点能量进行傅里叶变换等。
视频编解码器用于对数字视频压缩或解压缩。电子设备100可以支持一种或多种视频编解码器。这样，电子设备100可以播放或录制多种编码格式的视频，例如：动态图像专家组(moving picture experts group，MPEG)1，MPEG2，MPEG3，MPEG4等。
NPU为神经网络(neural-network，NN)计算处理器，通过借鉴生物神经网络结构，例如借鉴人脑神经元之间传递模式，对输入信息快速处理，还可以不断的自学习。通过NPU可以实现电子设备100的智能认知等应用，例如：图像识别，人脸识别，语音识别，文本理解等。
外部存储器接口120可以用于连接外部存储卡，例如Micro SD卡，实现扩展电子设备100的存储能力。外部存储卡通过外部存储器接口120与处理器110通信，实现数据存储功能。例如将音乐，视频等文件保存在外部存储卡中。
内部存储器121可以用于存储计算机可执行程序代码，所述可执行程序代码包括指令。 处理器110通过运行存储在内部存储器121的指令，从而执行电子设备100的各种功能应用以及数据处理。内部存储器121可以包括存储程序区和存储数据区。其中，存储程序区可存储操作系统，至少一个功能所需的应用程序(比如声音播放功能，图像播放功能等)等。存储数据区可存储电子设备100使用过程中所创建的数据(比如音频数据，电话本等)等。此外，内部存储器121可以包括高速随机存取存储器，还可以包括非易失性存储器，例如至少一个磁盘存储器件，闪存器件，通用闪存存储器(universal flash storage，UFS)等。
电子设备100可以通过音频模块170，扬声器170A，受话器170B，麦克风170C，耳机接口170D，以及应用处理器等实现音频功能。例如音乐播放，录音等。
音频模块170用于将数字音频信息转换成模拟音频信号输出，也用于将模拟音频输入转换为数字音频信号。音频模块170还可以用于对音频信号编码和解码。在一些实施例中，音频模块170可以设置于处理器110中，或将音频模块170的部分功能模块设置于处理器110中。
扬声器170A，也称“喇叭”，用于将音频电信号转换为声音信号。电子设备100可以通过扬声器170A收听音乐，或收听免提通话。
受话器170B，也称“听筒”，用于将音频电信号转换成声音信号。当电子设备100接听电话或语音信息时，可以通过将受话器170B靠近人耳接听语音。
麦克风170C，也称“话筒”，“传声器”，用于将声音信号转换为电信号。当拨打电话或发送语音信息时，用户可以通过人嘴靠近麦克风170C发声，将声音信号输入到麦克风170C。电子设备100可以设置至少一个麦克风170C。在另一些实施例中，电子设备100可以设置两个麦克风170C，除了采集声音信号，还可以实现降噪功能。在另一些实施例中，电子设备100还可以设置三个，四个或更多麦克风170C，实现采集声音信号，降噪，还可以识别声音来源，实现定向录音功能等。
耳机接口170D用于连接有线耳机。耳机接口170D可以是USB接口130，也可以是3.5mm的开放移动电子设备平台(open mobile terminal platform，OMTP)标准接口，美国蜂窝电信工业协会(cellular telecommunications industry association of the USA，CTIA)标准接口。
压力传感器180A用于感受压力信号，可以将压力信号转换成电信号。在一些实施例中，压力传感器180A可以设置于显示屏194。压力传感器180A的种类很多，如电阻式压力传感器，电感式压力传感器，电容式压力传感器等。电容式压力传感器可以是包括至少两个具有导电材料的平行板。当有力作用于压力传感器180A，电极之间的电容改变。电子设备100根据电容的变化确定压力的强度。当有触控操作作用于显示屏194，电子设备100根据压力传感器180A检测所述触控操作强度。电子设备100也可以根据压力传感器180A的检测信号计算触摸的位置。在一些实施例中，作用于相同触摸位置，但不同触控操作强度的触控操作，可以对应不同的操作指令。例如：当有触控操作强度小于第一压力阈值的触控操作作用于短消息应用图标时，执行查看短消息的指令。当有触控操作强度大于或等于第一压力阈值的触控操作作用于短消息应用图标时，执行新建短消息的指令。
陀螺仪传感器180B可以用于确定电子设备100的运动姿态。
气压传感器180C用于测量气压。
磁传感器180D包括霍尔传感器。
加速度传感器180E可检测电子设备100在各个方向上(一般为三轴)加速度的大小。当电子设备100静止时可检测出重力的大小及方向。还可以用于识别电子设备姿态，应用于横竖屏切换，计步器等应用。
距离传感器180F，用于测量距离。
接近光传感器180G可以包括例如发光二极管(LED)和光检测器，例如光电二极管。
环境光传感器180L用于感知环境光亮度。
指纹传感器180H用于采集指纹。电子设备100可以利用采集的指纹特性实现指纹解锁，访问应用锁，指纹拍照，指纹接听来电等。
温度传感器180J用于检测温度。在一些实施例中，电子设备100利用温度传感器180J检测的温度，执行温度处理策略。
触摸传感器180K，也称“触控面板”。触摸传感器180K可以设置于显示屏194，由触摸传感器180K与显示屏194组成触摸屏，也称“触控屏”。触摸传感器180K用于检测作用于其上或附近的触控操作。触摸传感器可以将检测到的触控操作传递给应用处理器，以确定触摸事件类型。可以通过显示屏194提供与触控操作相关的视觉输出。在另一些实施例中，触摸传感器180K也可以设置于电子设备100的表面，与显示屏194所处的位置不同。
骨传导传感器180M可以获取振动信号。在一些实施例中，骨传导传感器180M可以获取人体声部振动骨块的振动信号。骨传导传感器180M也可以接触人体脉搏，接收血压跳动信号。在一些实施例中，骨传导传感器180M也可以设置于耳机中，结合成骨传导耳机。音频模块170可以基于所述骨传导传感器180M获取的声部振动骨块的振动信号，解析出语音信号，实现语音功能。应用处理器可以基于所述骨传导传感器180M获取的血压跳动信号解析心率信息，实现心率检测功能。
按键190包括开机键，音量键等。按键190可以是机械按键。也可以是触摸式按键。电子设备100可以接收按键输入，产生与电子设备100的用户设置以及功能控制有关的键信号输入。
马达191可以产生振动提示。马达191可以用于来电振动提示，也可以用于触摸振动反馈。例如，作用于不同应用(例如拍照，音频播放等)的触控操作，可以对应不同的振动反馈效果。作用于显示屏194不同区域的触控操作，马达191也可对应不同的振动反馈效果。不同的应用场景(例如：时间提醒，接收信息，闹钟，游戏等)也可以对应不同的振动反馈效果。触摸振动反馈效果还可以支持自定义。
指示器192可以是指示灯，可以用于指示充电状态，电量变化，也可以用于指示消息，未接来电，通知等。
SIM卡接口195用于连接SIM卡。SIM卡可以通过插入SIM卡接口195，或从SIM卡接口195拔出，实现和电子设备100的接触和分离。电子设备100可以支持1个或N个SIM卡接口，N为大于1的正整数。SIM卡接口195可以支持Nano SIM卡，Micro SIM卡，SIM卡等。同一个SIM卡接口195可以同时插入多张卡。所述多张卡的类型可以相同，也可以不同。SIM卡接口195也可以兼容不同类型的SIM卡。SIM卡接口195也可以兼容外部存储卡。电子设备100通过SIM卡和网络交互，实现通话以及数据通信等功能。在一些实施例中，电子设备100采用eSIM，即：嵌入式SIM卡。eSIM卡可以嵌在电子设备100中， 不能和电子设备100分离。
图1C示出了一种AMOLED显示屏的平面图。参考图1C，AMOLED显示屏200包括显示区域102和边框区域101。其中边框区域101，围绕显示区域102。需要说明的是，边框区域101位于图1A所示的无显示区域中，边框区域101占无显示区域面积的比率由不同终端生产厂商的技术决定。
显示屏200本身是可以是柔性的、可弯曲的或可折叠的。显示区域102包括多个像素103，每个像素包括多个子像素，例如像素103中包括子像素104、子像素105和子像素106。其中，子像素104可以发红光，子像素105可以发绿光，子像素106可以发生蓝光。需要理解的是，图1C子像素排列仅仅是示例性的。子像素排列还可以采用Pentile排列方式，每个像素只包含两个子像素，发光时通过借用相邻像素的一个子像素，实现单个像素发光。
图2是显示屏200的横截侧视图。参考图2，显示屏200主要包括基板110、AMOLED核心层250和TFE封装层230，其中基板110可以用来承载显示屏200包括的元器件。这些元器件可以是显示屏的各个组件，例如晶体管，电容器，电极，OLED器件，Micro LED器件等。
基板110包括显示区域102和边框区域101。可选的，基板110上可以设置缓冲层111。AMOLED核心层250可以设置在缓冲层111上，也可以直接设置在基板110上；TFE封装层230封装住AMOLED核心层250。需要说明的是，TFE封装层230仅仅是示例性的，用来隔绝外界的水汽和氧气。现有技术中，还可以使用玻璃封装住AMOLED核心层250。玻璃材质相比TFE封装层230，隔绝外界的水汽和氧气效果更好，但是玻璃材质很难做到自由折叠或者弯曲，不适用于可折叠、可弯曲的AMOLED显示屏。本申请实施例中，AMOLED显示屏可以使用TFE封装层230，以实现可弯曲、可折叠的特点。
AMOLED核心层250包括发光前板(Front Plane)252和驱动电路背板(Back Plane)251，驱动电路背板也可以称为驱动后板。其中发光前板主要由采用OLED有机发光材料的子像素构成、驱动电路背板主要由TFT薄膜晶体管构成，用来驱动发光前板中的子像素发光。可选的，显示屏100还可以包括偏光片260。偏光片260位于TFE封装层230上方，可以抵消外界光线进入AMOLED显示屏内部产生的反射光，从而降低外界光线反射产生的干扰，增强显示屏的对比度。
图3A是沿图1C的线A-B截取的剖视图，主要包括TFT封装层230、发光前板251、驱动电路背板252和基板110。参考图3A，基板110的材质可以是玻璃材质或者是塑料材质，对AMOLED核心层250起到基本的支撑作用。可选的，基板110上可以设置缓冲层111。缓冲层111可以减少或防止外来材料、水汽或氧气渗透到发光前板和驱动电路背板，保护TFT薄膜晶体管，也可以给基板110提供一个平坦的表面。缓冲层111可以由氧化硅、氮化硅等无机材料制成。缓冲层111可以由一个或多个无机层交替堆叠的多层形成。
图2所示的驱动电路背板251在图3A所示的局部剖视图中，可以看到更详细的结构。驱动电路背板251可以包括栅极绝缘层112、中间绝缘层(an insulating interlayer)113和多个TFT驱动电路。每个TFT驱动电路可以由一个或多个晶体管T和一个或多个电容器C构成，用来控制AMOLED显示屏中单个子像素发光，比如控制图3A中的子像素240发光。再例如图1C所示的每个子像素下方，都有一个TFT驱动电路。
图3A所示的剖视图包括一种驱动电路背板251的具体结构。如图3A所示，晶体管T1包括半导体层205、栅电极208、源电极206和漏电极207。同样，晶体管T2包括半导体层201、栅电极204、以及源电极202和漏电极203。一个晶体管中的半导体层可以由低温多晶硅(p-Si)或非晶硅(a-Si)制成，源电极、漏电极和栅电极可以由钼(Mo)、铝(Al)、铬(Cr)、金(Au)、钛(Ti)、镍(Ni)、钕(Nd)和铜(Cu)之一或它们的合金的单层或多层形成。
栅极绝缘层112可以设置在半导体层上，例如，图3A所示的栅极绝缘层覆盖半导体层205和半导体层201。栅极绝缘层112可以由氧化硅、氮化硅、氮氧化硅等材料制成。
中间绝缘层113可以设置在栅电极上，覆盖栅电极204和栅电极208。中间绝缘层113可以由氧化硅、氮化硅等材料制成。如图3A所示，以晶体管T2为例，晶体管T2的源电极202和漏电极203可以设置在栅极绝缘层112上，通过去除栅极绝缘层112和中间绝缘层113部分形成的接触孔，与半导体层201接触。
驱动电路背板中的TFT驱动电路可以有多种结构，示例性的，图3A所示的AMOLED显示屏可以采用传统的2T1C结构的TFT驱动电路，即每一个TFT驱动电路包括两个晶体管和一个电容器，其中的一个晶体管作为开关晶体管，用来控制电流是否进入驱动电路，另一个晶体管作为驱动晶体管，与电源电压连接，在一定时间内为子像素提供稳定的电流。电容用来存储电压，在每次扫描结束后保证驱动晶体管在一定时间内给子像素提供稳定的电流。
示例性的，图3A所示的晶体管T1、T2和一个电容器C(图3A中未示出)可以形成一个2T1C结构的TFT驱动电路，用来驱动一个子像素发光。图4是与图3A中的TFT驱动电路对应的逻辑电路图，T1可以为开关晶体管，T2可以为驱动晶体管。图3A所示的T1的栅电极208连接图4所示的扫描信号Vscan，图3A所示的T1的源电极206连接图4所示的数据信号Vdata，图3A所示的T1的漏电极207与T2的栅电极204及图4所示电容C的一端连接。
图3A所示的T2的源电极202连接图4所示的电源正电压VDD，并接触电容C的另一端，图3A所示的T2漏电极203连接图4所示的子像素240一个电极，子像素240的另一个电极连接电源的负电压VSS，负电压VSS可以统一提供给所有的子像素。
OLED子像素是电流驱动发光，即电流通过子像素时，子像素就可以发光。因此可以通过控制通过子像素的电流来控制子像素是否发光以及发光的强度。具体来说，AMOLED显示屏的驱动芯片每隔一段时间发出扫描信号VScan找到想要发光的子像素，当T1接收到扫描信号VScan，晶体管T1导通，因此允许数据信号Vdata接入T2的栅极。T2接收到数据信号Vdata后，晶体管T2导通，允许电流到达子像素，子像素开始发光。由于扫描信号VScan在一个扫描周期内会由高电平变成低电平，晶体管T1关闭，Vdata无法接入晶体管T2的栅极，因此为保证晶体管T2能够持续接收数据信号Vdata，使得子像素持续发光直到VScan下一次扫描周期。使用电容器C来存储T2栅极处数据信号Vdata，保证在本次扫描周期中子像素能持续发光。
需要说明的是，本申请实施例所示的2T1C驱动电路仅仅是示例性的，其他类型的电路和晶体管结构同样可以适用，例如低栅型晶体管或更为复杂的补偿电路设计。例如，在AMOLED显示屏工艺制作中，不同位置的TFT晶体管可能存在性能不一样的情况，这会 导致亮度显示差异。因此AMOLED显示屏还可以采用7T1C、6T1C或者5T2C等结构，用来补偿2T1C结构因为工艺造成的不稳定性或性能差异。
图2所示的发光前板252可以设置在图3A所示的栅极绝缘层112上。如图3A所示，发光前板可以包括平坦化层114、钝化层119、子像素240和像素限定层115。
平坦化层114可以设置在源电极和漏电极上，保护晶体管并提供平坦表面。在一些实施例中，源电极和漏电极上可以设置钝化层(图中未示出)，所述钝化层可以用来隔离源电极、漏电极。平坦化层114可以设置在所述钝化层上。
平坦化层114可以包括有机化合物如有机玻璃(polymethylethacarylate)或无机物如硅化合物或金属氧化物。可选的，平坦化层114上可覆盖钝化层119，钝化层119可以由无机绝缘材料形成，例如氮化硅(SiNx)、氧化硅(SiO2)、甲基丙烯酸甲酯(PMMA)、苯并环丁烯(BCB)等。钝化层119可以进一步隔绝从基板110渗透过来的水汽和氧气。
像素限定层115可以通过干法刻蚀、湿法刻蚀、纳米压印等方法处理，形成开口，开口的宽度可以考虑显示屏的分辨率、像素密度和子像素密度。开口的形状可以是凹陷结构，其纵截面呈“凹”字型结构或堤坝结构，其中的凹部具有竖直的或倾斜的侧壁。另外像素限定层115表面也可以形成多种凹陷结构，如三角锥、棱锥、半圆等等。示例性的，图3A所示的像素限定层115形成的是具有倾斜侧壁的“凹”字型结构的开口。可选的，像素限定区115可以设置平坦化层114上。像素限定层115可以由多种技术形成，例如喷墨印刷、丝网印刷、层合、旋涂等。像素限定层115可以由有机绝缘材料或无机绝缘材料制成，例如丙烯酸树脂、氧化硅、氮化硅、苯丙环丁烯等。
子像素在像素限定层115的开口处形成，包括第一电极、有机发光层和第二电极。示例性的，图3A所示的子像素240包括第一电极211、有机发光层212和第二电极213，第一电极211可以是阳极电极，第二电极213可以是阴极电极。其中第一电极211通过去除平坦化层114的部分形成的接触孔与驱动晶体管T2漏电极203接触，通过开口露出，与有机发光层212接触。第一电极211可以由金属、金属合金、导电金属氧化物、透明导电材料等制成。有机发光层212可以设置在第一电极211上，该有机发光层212可以是小分子类型，也可以是高分子类型。其中高分子类型只有一层，小分子类型有多层结构，如图3B所示，小分子类型结构的有机发光层可以包括电子注入层(Electron Injection)、电子传输层(Electron Transport)、发光层(Emission)、空穴传输层(Hole Transport)和空穴注入层(Hole Injection)等。具体来说，阴极注入电子到电子注入层，电子经过电子注入层进入电子传输层。阳极注入空穴到空穴注入层，空穴经过空穴注入层到达空穴传输层。电子与空穴在到达发光层后，形成电子空穴对然后发光。本申请实施例对有机发光层的类型不作限定。
第二电极213设置在有机发光层212上，可以由金属、金属合金、导电金属氧化物、或透明导电材料等制成。第一电极211和第二电极213在不同情况下可能采用不同的材料。例如，在顶部发光情况下，即子像素向第二电极213方向发光，第二电极213可以由透明导电材料制成(例如铟锌氧化物IZO或铟锡氧化物ITO)。第一电极211可以由不透明导电材料制成(例如银Ag或ITO/Ag/ITO)。这样，有机发光层212中产生的光将通过第二电极213发出。顶部发光的好处在于，光线不会受到驱动电路的阻挡。
TFE薄膜封装层230可以设置在发光前板上，覆盖AMOLED核心层250。TFE薄膜封 装技术是一种在发光前板上叠加无机层和有机层的技术，可以防止氧气和水分进入。TFE薄膜封装层230可以适用于可折叠、可弯曲的AMOLED显示屏。TFE薄膜封装层230可以由一个有机封装层和至少一个无机封装层组成。无机封装层可以用来隔离氧气和水分，但是无机封装层的性质不均匀，此时可以在无机封装层上设置有机封装层用来稳定无机无机封装层。TFE薄膜封装层可以采用低温原子层沉积技术(ALD)或者电感耦合等离子增强化学气相沉积技术(ICP-CVD)方式制作。
示例性的，图3A中的TFE薄膜封装层230由第一无机封装层116、有机封装层117、第二无机封装层118组成。其中，第一无机封装层116覆盖发光前板252，由无机材料构成(例如氧化硅SiO2)。有机封装层117设置在第一无机封装层116上方，可以由聚乙烯对苯二酸酯(PET)、聚甲醛(Polyoxymethylene)等材料制成。第二无机封装层118覆盖有机封装层117。第二无机封装层118可以由氧化硅(SiO2)、氮化硅(SiNx)等材料构成。需要说明的是，本申请实施例所示的TFE薄膜封装层仅仅是示例性的，TFE薄膜封装层还可以由11层无机封装层和有机封装层叠加而成。随着技术的发展，TFE薄膜封装层也可以由一层材料构成，本申请实施例对TFE薄膜封装层的结构不做限定。
进一步的，为了防止氧气和水汽从显示区域102的侧面进入，可以在中间绝缘层113上设置坝(dam)221。坝211的材质可以与平坦化层114一致。可选的，坝211的材质也可以与像素限定层115一致。如图3A所示，第一无机封装层116与第二无机封装层118在坝221附近连接，并覆盖在坝221上。因此，在制作有机封装层117时，坝221可以防止有机封装层的有机材料流出基板110。此外，坝221可用于增加显示边缘与有机发光层或金属电极层的穿透距离，保证密封性能。坝221可以有一个，也可以有多个。
现有技术中，由于TFE薄膜封装层对AMOLED显示屏的侧面封装性较差，一般需要多个坝结构用来防止氧气和水汽从显示屏侧面进入，坝结构所在的位置无法设置子像素，这使得AMOLED显示屏存在一定宽度的无显示区域。
Micro LED显示技术是将传统无机LED结构设计薄膜化、微小化、阵列化，单个Micro LED器件尺寸仅在1～10μm等级左右。在制作好Micro LED器件后，连接到TFT驱动电路上，通过TFT驱动电路控制单个Micro LED器件发光。Micro LED相比AMOLED，具有高亮度，超高分辨率、发光效率高的特点。更重要的是，Micro LED器件不会受到水汽和氧气的影响。然而Micro LED显示屏距离量产还面临几个问题，例如如何将现有毫米级别的LED器件缩小到只有原来1％的大小，如何将制作好的巨量Micro LED器件转移到TFT驱动背板上，使得每一个Micro LED器件都能与一个TFT驱动电路连接。尤其是后一个问题，在现有技术下还没有找到合适的方法。以全高清(Full High Definition,FHD)手机显示屏为例，如果显示屏分辨率为2160*1080，每个像素包括3个子像素。在采用Micro LED显示技术制作所述显示屏的情况下，需要制作约七百万(2160*1080*3)颗Micro LED器件，然后将制作好的约七百万颗Micro LED器件转移到TFT驱动背板上，每一个Micro LED器件需要准确连接一个TFT驱动电路，这对工艺带来了巨大的挑战。同时，在转移Micro LED器件前需要检测七百万颗Micro LED器件能否发光。转移Micro LED器件后需要维修或替换不能正常发光的Micro LED器件，这给制作Micro LED显示屏带来巨大的成本。因此在智能手机领域，Micro LED显示屏还不具有实际量产的能力。
本申请实施例描述了一种显示屏，其中显示屏分为显示区域和边框区域，显示区域采用AMOLED显示技术，边框区域放置有有限数量的Micro LED器件及驱动线路。根据本申请实施例，边框区域也可以显示内容，极大缩小了无显示的封装区域。同时在目前技术能力下克服Micro LED巨量转移的难点，满足OLED密封条件。图18示出了一种采用本申请实施例所示显示屏的手机，相比图1A所示的手机正面，无显示区域的面积占手机正面面积的比例明显缩小。
本申请实施例涉及一种Micro LED器件，包括P-N二极管。可以理解的是，其他微型半导体装置也可以采用同样的方式设置。
微型发光二极管(Micro Light Emitting Diode，Micro LED)显示技术是将LED结构设计薄膜化、微小化、阵列化，单个Micro LED器件尺寸仅在1～10μm等级左右。在制作好Micro LED器件之后定址巨量转移到电路基板上，形成具有超小间距LED的显示屏，这种显示屏具有超高像素、超高解析率。Micro LED显示技术理论上能够制作各种尺寸的屏幕。但由于巨量转移技术的瓶颈，目前Micro LED技术还没有达到量产的能力。
以下实施例，利用Micro LED器件不受水汽和氧气影响的特点，将Micro LED器件布置在AMOLED显示屏的边框区域，取代坝结构，用来阻挡外界的水汽和氧气从AMOLED显示屏的侧面进入到发光前板。由于Micro LED器件可以用来显示图像，采用这种显示屏制作方法，可以有效减少显示屏无法显示画面的区域。同时，布满边框区域所需的Micro LED器件数量相对较少，不涉及巨量转移的技术问题。
Micro LED技术有多种全彩色显示方法，如RGB三色方法、UV/蓝光方法和光学透镜合成方法等。其中，RGB三色方法是基于RGB三原色原理，通过发红光的Micro LED器件、发蓝光的Micro LED器件和发绿光的Micro LED器件，来合成各种色彩。这是目前LED屏幕主要采用的方法。UV/蓝光方法指在发蓝光的Micro LED器件上搭配红色或绿色的发光介质，使蓝光Micro LED器件发出红光或者绿光。例如，采用UV/蓝光方法时，可以在一个像素中放置是三个发蓝光的Micro LED器件，其中一个Micro LED器件上方放置发绿光的发光介质，另一个Micro LED器件上方放置发红光的发光介质。这样一个像素可以实现发白光或任何其他颜色的光。发光介质一般可以分为荧光粉和量子点。荧光粉可以是硫化物、铝酸盐、氧化物、硅酸盐、氮化物等材料，在蓝光Micro LED器件的激发下发出特定波长的光。荧光粉颗粒尺寸可以从100nm到1μm，而量子点是一种纳米颗粒，受到光线激发后可以发出不同颜色的光。
为方便描述，以下实施例采用RGB三色显示方法。可以理解的是，本申请实施例一样适用于其他显示方法。
本实施例中，边框区域物理像素的设置需要参考边框宽度、像素密度和Micro LED器件的大小。例如，现有技术中边框宽度一般是1mm，如果显示屏的像素密度是400PPI(对角线为一英寸的面积内拥有400个像素)，每个像素的宽度约为63.5um。如图1C所示的边框区域101的宽度C-D范围内需要设置15个像素(15x 63.5um＝952.5um)。现有技术中Micro LED器件尺寸可以做到15-30um。因此每个像素可以放置两个或三个Micro LED器件。
在一些实施例中，可以采用传统RGB排列方式，即每个Micro LED像素分别放置红色 Micro LED器件、蓝色Micro LED器件和绿色Micro LED器件等三个Micro LED器件。一个像素可以显示白光或者任何色彩的光。
在另一些实施例中，每个Micro LED像素可以放置两个Micro LED器件，采用pentile排列，这两个Micro LED器件可以是红色Micro LED器件和绿色Micro LED器件，也可以是蓝色Micro LED器件和绿色Micro LED器件。一个虚拟像素在发光时，至少需要红、绿、蓝三种颜色，因此每个Micro LED像素在显示一个虚拟像素时，需要借用相邻Micro LED像素中包含的红色Micro LED器件或者蓝牙Micro LED器件。
下面以图8A为例详细说明pentile排列。如图8A所示，图8A-1示出了一种pentile排列，图8A-2示出了一种RGB排列，其中pentile排列中的每个像素包括两个子像素，RGB排列中的每个像素包括三个子像素。示例性的，像素810包括红色子像素801和绿色子像素802，像素820包括蓝光子像素803和绿光子像素804，像素830包括红色子像素805、绿光子像素806和蓝光子像素807。在发光时，如果像素810想要发出白光，需要借用像素820中的蓝光子像素803，此时像素810中的红光子像素801、绿光子像素802和像素820中的蓝光子像素803共同发光，显示出一个白光虚拟像素。这种方式的好处在，在实现相同分辨率的情况下，减少子像素的数量。
需要说明的是，本申请实施例中一个像素可以包括不同数量的子像素，子像素的排列也可以采用不同的方案，例如红绿蓝黄、红绿蓝黄青、红绿蓝白等。本申请实施例示出的子像素排列方式仅仅是示例性的。
由于现有技术中Micro LED器件很难继续缩小，示例性的，本申请实施例中每个Micro LED像素放置两个Micro LED器件。图5示出了根据本申请一种实施例的AMOLED显示屏的平面图。类似于图1所示的AMOLED显示屏200，图5所示的AMOLED显示屏也包括显示区域102和边框区域101，区别在于，图5所示的边框区域101包括多个像素，每个像素包括有两个子像素，每个子像素为一个Micro LED器件，Micro LED器件可以发红光、蓝光或绿光中的一种。例如像素510中可以包括子像素511和512。在一些实施例中，子像素511可以发红光，子像素512可以发绿光。在另一些实施例中，子像素511可以发蓝光，子像素512可以发绿光。图5所示的边框区域101因为设置了Micro LED像素，可以显示画面内容，但依然借用了现有技术中的边框的概念，因此在图5所述的新型AMOLED屏幕中，101区域依然被称为边框区域。
图6是沿图5的线E-F截取的一种剖视图，其中Micro LED器件采用无源矩阵驱动方式(Passive Matrix)。类似于图3A所示的显示屏，图6所示显示屏的显示区域102包括驱动电路背板、发光前板和TFE封装层。与图3A所示的显示屏的结构相比，图6所示显示屏的边框区域101设置有Micro LED器件，既起到了坝结构的作用，又能显示图形用户界面。
图6所示的Micro LED器件500可以为如图7所示的为垂直型Micro LED结构。需要说明的是，图6所示的Micro LED器件结构仅仅是示例性的，根据驱动方式的不同，Micro LED器件还可以是倒装型，具体将在下面解释。
图7示出了一种垂直型Micro LED结构。如图7所示，Micro LED器件500可以包括顶部电极511、底部电极512和p-n二极管，其中p-n二极管可以包括n型掺杂层(n-doped  layer)523、p型掺杂层(p-doped layer)521以及量子阱层(quantum well layers)522，所述量子阱层可以为一层或多层。如图7所示，p型掺杂层521位于n型掺杂层523上方。在另一些实施例中，n型掺杂层523可以位于p型掺杂层521上方。顶部电极511和底部电极512可以由包括金属、导电氧化物和导电聚合物等各种导电材料构成。顶部电极511可以与第四电极502接触，底部电极512可以通过键合层513与第三电极501键合。键合层513可以由焊料材料如锡、铟或它们的合金构成。
图11示出了一种倒装型Micro LED器件。类似图7所示的Micro LED器件，图11所示的Micro LED器件包括顶部电极511、底部电极512和p-n二极管。其中p-n二极管可以包括n型掺杂层(n-doped layer)523、p型掺杂层(p-doped layer)521以及量子阱层(quantum well layers)522。与图7所示的Micro LED器件不同，图11所示的Micro LED器件500顶部电极511与底部电极512均位于底部，与键合层513连接。其中，n型掺杂层(n-doped layer)523通过底部电极512、键合层513与一个电极接触，例如如图10所示的第三电极501。p型掺杂层(p-doped layer)521通过顶部电极511、键合层513与另一个电极接触，例如图10所示的第四电极502接触。倒装型Micro LED器件的好处在于，第三电极和第四电极可以设置在同一个平面，这样可以同时制作第三电极和第四电极，不需要分开制作，减少了制作工艺的难度。
Micro LED器件连接的第三电极和第四电极可以根据工艺和需求设置在AMOLED显示屏边框区域的不同地方，为了尽可能利用现有制作AMOLED显示屏的工艺，降低本申请实施例中显示屏的制作难度，图6所示的第三电极501可以设置在中间绝缘层113上。在另一些实施例中，如图16所示，第三电极501也可以设置在栅极绝缘层112上，通过在中间绝缘层113上穿孔露出，跟Micro LED器件500接触。Micro LED器件500可以通过键合层513固定在第三电极501上。钝化层119可以覆盖第三电极501和Micro LED器件500，将连接到Micro LED器件500的底部电极和连接到Micro LED器件500的顶部电极绝缘。此外，钝化层119还可以将Micro LED器件500的侧壁与顶部电极或底部电极绝缘。在一些实施例中，可以在安装好Micro LED器件500后，制作钝化层119。可选的，也可以先使钝化层119完全覆盖Micro LED器件500和第三电极501。然后在钝化层119上开设通孔，使Micro LED器件500暴露。具体制作方式将在下面进行详细描述。
在一些实施例中，Micro LED器件500可以在钝化层上方突出，通过蚀刻方式去除Micro LED器件500顶部电极的钝化层残余，然后再制作第四电极502，与Micro LED器件500连接。
图6所示的第四电极502可以设置在钝化层119上方，通过钝化层119形成的缺口与露出的Micro LED器件500接触。第三电极501和第四电极502在不同情况下可能采用不同的材料。例如，第三电极501可以由透明导电材料制成(例如铟锌氧化物IZO或铟锡氧化物ITO)。第四电极502可以由不透明导电材料制成(例如银Ag或ITO/Ag/ITO)。在一些实施例中，第三电极501可以作为阴极，第四电极502可以作为阳极，分别连接到驱动IC上，所述驱动IC为Micro LED的驱动IC。在一些实施例中，如图6所示，第三电极501上可以设置LS遮光层(light-shield layer)120。所述LS遮光层120具有绝缘功能，可以吸收Micro LED器件500底部出光或侧部漏光，减少LED像素间光的串扰。
图15示出了另一种采用无源矩阵驱动方式的实施例示意图。
类似于图6所示的显示屏200，图15所示显示屏200的边框区域101设置有Micro LED器件，第三电极501设置在中间绝缘层113上，Micro LED器件设置在第三电极501上，第四电极502设置在钝化层119上。区别在于，图15所示显示屏200中的平坦化层114延伸至边框区域，覆盖第三电极501。第三电极501通过去除平坦化层114部分区域露出，然后与Micro LED器件500的连接。
图8B示出了根据本申请实施例的一种显示屏的边框区域中Micro LED器件排列顺序的示意图。
如图8B所示，Micro LED器件采用无源矩阵驱动方式，多个第三电极501和多个第四电极502分别连接到Micro LED驱动IC(图中未示出)。第三电极501可以理解为一层电极，多个Micro LED器件的一个电极均与该电极层接触。同样的，第四电极502也可以理解为一层电极。
如图8B所示，边框区域中的Micro LED器件排列采用pentile形式，例如像素702包括一个红色子像素和一个绿色子像素，像素701包括一个蓝色子像素和一个绿色子像素。从左往右，位于第四电极502上的子像素以蓝-绿-蓝-绿和红-绿-红-绿这两种顺序交替排列。需要说明的是，图8B所示的红绿蓝绿像素排列方式仅仅是示例性的。在另一些实施例中，如图9所示，位于第四电极502上的子像素从左往右以红-绿-蓝-绿的顺序排列。这种排列顺序可以防止红色像素或蓝色像素形成垂直线，改善显示质量。在另一些实施例中，边框区域中的Micro LED器件排列可以采用Bayer形式。
图10示出了沿图5的线C-D截取的另一种剖视图，其中Micro LED器件为如图11所示的倒装型结构，采用有源矩阵驱动(Active Matrix)方式驱动发光。
如图10所示，边框区域101除设置Micro LED器件之外，还设置用以控制Micro LED器件的TFT驱动电路，例如一个TFT驱动电路可以包括图10中晶体管T3和晶体管T4。示例性的，图10所示的实施例可以采用2T1C像素驱动电路，驱动Micro LED器件发光。可选的，平坦化层114延伸至边框区域101。这种方式的好处在于，平坦化层114可以给Micro LED器件提供平坦的平面，同时制作电极的工艺更加简单。
图10所示的Micro LED器件采用图11所示的倒装型Micro LED器件，与两个电极连接。例如，图10所示的Micro LED器件500与第三电极501和第四电极502连接，其中，图11所示的Micro LED器件底部电极512与第三电极501接触，Micro LED器件顶部电极511与第四电极502接触。可选的，所有Micro LED器件可以连接到同一个第四电极502上。第四电极502可以是阳极。可选的，第三电极501和第四电极502均设置在钝化层119上。采用倒装型Micro LED器件的好处在于，在制作第三电极和第四电极时，可以与第一电极同时制作，降低了显示屏的制作难度。
第三电极501和第四电极502可以由ITO/Ag/ITO构建，制作工艺与第一电极211一致。如图10所示，第三电极501通过去除钝化层119和平坦化层114部分形成的接触孔与2T1C驱动电路中的驱动晶体管中的漏电极接触。例如，图10所示的Micro LED器件500连接的第三电极501与晶体管T4的漏电极接触。
TFE薄膜封装结构230覆盖在Micro LED器件500上。可选的，图10所示的第三电极 501和第四电极502上可以覆盖LS遮光层(图中未示出)。图10所示Micro LED器件可以按图8B所示RGBG的方式排列。可以理解的是，本申请实施例对Micro LED器件的排列方式没有做出限定。
在另一些实施例中，如图17所示，显示屏200中的平坦化层114没有延伸至边框区域101，第三电极501通过去除钝化层119的部分形成的接触孔与晶体管T4接触。这种方式的好处在于，不需要改变现有制作钝化层的工艺。
图12示出了一种Micro LED器件有源驱动电路连接方式。图12示出了三个虚线方框，每个方框为一个驱动电路，用来驱动一个Micro LED器件发光。需要理解的是，图12所示的三个Micro LED器件的驱动电路连接方式仅仅是示例性的，这种连接方式可以用于所有Micro LED器件的驱动电路连接。
类似于图4所示的2T1C驱动电路，每个驱动电路包括两个晶体管和一个电容器。其中一个晶体管为开关晶体管，另一个晶体管为驱动晶体管，例如T3可以是开关晶体管，T4可以是驱动晶体，结合一个电容器C，共同驱动一个Micro LED器件发光。与图4所示的2T1C驱动电路不同，图12所示的Micro LED器件与驱动晶体管和正电压VDD连接。示例性的，所有Micro LED器件共同连接一个传输正电压VDD的电极，例如图10所示的第四电极502。驱动晶体管的源电极与负电压VSS连接。可选的，调光方式可采用脉冲宽度调制方式(PWM)。这种电路连接方式的好处在于可以部分利用OLED驱动电路。例如，图12所示开关晶体管连接的扫描信号Vscan可以利用AMLOED屏幕的栅极驱动电路输出可选的，栅极驱动电路可以采用集成栅极驱动电路(Gate driver On Arry,GOA)，将栅极驱动电路集成在驱动背板上。这种方式的好处在于可以从材料成本和制作工艺两个方面降低成本。Vdata信号可以由Micro LED驱动IC输出。这样不需要单独设置驱动Micro LED器件的输出扫描信号Vscan的电路。
为降低本申请实施例涉及的AMOLED显示屏制作难度，边框区域Micro LED器件连接的第三电极和第四电极的制作可以利用现有AMOLED显示屏的加工工艺。
在一些实施例中，图6所示的第四电极502、图10所示的第三电极和第四电极均可以利用第一电极211的加工工艺制作。下面将参考图13进行具体说明。
图13示出了一种第一电极211的加工工艺。
S1401：镀上导电材料。
如图6所示，AMOLED采用顶部发光模式时，第一电极211可以采用ITO/Ag/ITO薄膜材料制作。所述ITO/Ag/ITO薄膜材料的制作方法是在钝化层119上依次镀上ITO层、Ag层和ITO层，然后形成ITO/Ag/ITO薄膜材料，其中ITO是透明层，Ag是不透明层。为保证Micro LED器件向上发光，第四电极502需要由透明材料制作。因此在制作Ag层时，可以在边框区域101上方增加光罩，仅保留ITO层。换而言之，显示区域102镀上的导电材料为ITO/Ag/ITO薄膜材料，边框区域101镀上的导电材料为ITO薄膜材料。
S1402：在导电材料上镀上感光材料。
感光材料可以是光刻胶，被光照射后会溶解。
S1403：通过光罩曝光形成电路图案。
现有工艺中，可以在光罩上添加第一电极221的电路图案，通过曝光，第一电极221 的电路图案在感光材料上显示出来，其中，被光照的地方是需要去除的，需要保留的电路是被光罩遮挡，不受光照的部分。在一些实施例中，如果Micro LED器件采用无源驱动方式，可以在光罩上添加图6所示第一电极221和第四电极502的电路图案。经过曝光后，第一电极211和第四电极502的电路图案被显示出来。
在另一些实施例中，如果Micro LED器件采用有源矩阵驱动方式，可以在光罩上添加图10所示第一电极221、第三电极501和第四电极502的电路图案，经过曝光后，第一电极211、第三电极501和第四电极502的电路图案被显示出来。
S1404：形成电极。
通过蚀刻保留电路图案区域的导电材料，然后再去除感光材料得到电极。在一些实施例中，所述电极包括图6所示第一电极221和第四电极502。
在另一些实施例中，所述电极包括图10所示的第一电极221、第三电极501和第四电极502。
在一些实施例中，图6所示的第三电极501可以利用TFT驱动电路背板加工工艺制作。下面将参考图14进行具体说明。
图14示出了一种TFT驱动电路背板制作方法。
S1501：形成半导体层。
在缓冲层上形成多晶硅层，通过构图工艺形成半导体层。
S1502：形成栅极绝缘层。
将无机材料如氧化硅沉积在半导体层的整个表面，形成栅极绝缘层。
S1503：形成栅电极。
具体而言，可以通过溅射工艺将金属层沉积在栅极绝缘层上，然后通过构图工艺处理形成栅电极。所述构图工艺可以参考图13所示的电极加工工艺。在一些实施例中，通过在光罩上增加第三电极501的电路图案，可以在形成栅电极时同时形成第三电极501，所述第三电极501位于栅极绝缘层上。
S1504：形成中间绝缘层。
在栅电极上沉积无机材料如氧化硅，形成中间绝缘层。
S1505：形成源电极、漏电极。
在中间绝缘层和栅极绝缘层上刻蚀，露出半导体层。将金属层沉淀在中间绝缘层上，通过构图工艺处理形成源电极、漏电极。在一些实施例中，第三电极501也可以在这一个步骤完成，具体方法参考S1503。通过在光罩上增加第三电极501的电路图案，可以在形成源电极、漏电极同时形成第三电极501。所述第三电极501位于中间绝缘层上。
本申请实施例中，利用Micro LED器件对水汽不敏感的特性，将其放置在AMOLED屏幕边框区域，取代用来阻挡水汽的坝结构，实现了全面屏显示的效果。并且，边框区域需要转移的Micro LED器件不多，有效避免巨量转移的难点。本申请实施例所示的AMOLED屏幕中，Micro LED区域的制作方式可以利用现有制作AMOLED屏幕技术完成，尽可能降低制作难度。
为了解释的目的，前面的描述是通过参考具体实施例来进行描述的。然而，上面的示例性的讨论并非意图是详尽的，也并非意图要将本申请限制到所公开的精确形式。根据以 上教导内容，很多修改形式和变型形式都是可能的。选择和描述实施例是为了充分阐明本申请的原理及其实际应用，以由此使得本领域的其他技术人员能够充分利用具有适合于所构想的特定用途的各种修改的本申请以及各种实施例。

Claims (33)

  1. 一种显示屏，其特征在于，包括：
    基板，用于承载所述显示屏的元器件；
    驱动电路背板，包括多个驱动电路单元，所述驱动电路背板设置在所述基板上方；
    第一像素层，包括多个像素，所述第一像素层的每个像素包括多个子像素，所述第一像素层的每个子像素包括一个有机发光二极管OLED器件，其中，所述第一像素层设置在所述驱动电路背板上方，所述第一像素层的每个子像素的OLED器件与所述驱动电路背板中的至少一个驱动电路单元连接；
    第二像素层，包括第一电极层，第二电极层以及设置在所述第一电极层和所述第二电极层之间的多个像素，所述第二像素层的每个像素包括多个子像素，所述第二像素层的每个子像素包括一个微型发光二极管Micro LED器件，其中，所述第二像素层设置在所述基板上方，围绕所述第一像素层，且所述第二像素层的面积小于所述第一像素层的面积。
  2. 根据权利要求1所述的显示屏，其特征在于，所述Micro LED器件为垂直型Micro LED器件，所述垂直型Micro LED器件包括顶部电极和底部电极，其中，所述第二电极层在所述第一电极层上方，所述垂直型Micro LED器件的底部电极与所述第一电极层连接，所述垂直型Micro LED器件的顶部电极与所述第二电极层连接。
  3. 根据权利要求2所述的显示屏，其特征在于，所述第二像素层还包括钝化层，所述钝化层设置于所述第一电极层和所述第二电极层之间，且覆盖所述垂直型Micro LED器件。
  4. 根据权利要求3所述的显示屏，其特征在于，其中所述钝化层在所述垂直型Micro LED器件的顶部电极上方设置有开口，所述顶部电极通过所述开口与所述第二电极层连接。
  5. 根据权利要求3所述的显示屏，其特征在于，每个驱动电路单元包括多个晶体管，所述驱动电路背板的所有晶体管的源极和漏极组成第三电极层，所述驱动电路背板的所有晶体管的栅极组成第四电极层，所述第一电极层与所述第三电极层或所述第四电极层位于同一层。
  6. 根据权利要求1至5所述的显示屏，其特征在于，所述第一电极与电源的正电压连接，所述第二电极与电源的负电压连接。
  7. 根据权利要求1至5所述的显示屏，其特征在于，所述第二像素层的子像素排列方式为Pentile排列或Bayer排列。
  8. 根据权利要求5所述的显示屏，其特征在于，所述显示屏还包括薄膜封装层，所述薄膜封装层设置于所述第二电极上方，覆盖所述第二电极，或，
    所述显示屏还包括遮光层，所述遮光层设置于所述驱动电路背板上方，覆盖所述第一电极层，或，
    所述垂直型Micro LED器件包括n型掺杂层和p型掺杂层，所述n型掺杂层与所述垂直型Micro LED器件顶部电极连接，所述p型掺杂层与所述垂直型Micro LED器件底部电极连接，或，
    所述第一电极层为不透明电极层，所述第二电极层为透明电极层。
  9. 一种显示屏，其特征在于，包括：
    基板，用于承载所述显示屏的元器件；
    驱动电路背板，包括多个驱动电路单元，所述驱动电路背板设置在所述基板上方；
    第一像素层，包括多个像素，所述第一像素层的每个像素包括多个子像素，所述第一像素层的每个子像素包括一个有机发光二极管OLED器件，其中，所述第一像素层设置在所述驱动电路背板上方，所述第一像素层的每个子像素的OLED器件与所述驱动电路背板中的至少一个驱动电路单元连接；
    第二像素层，包括多个像素，所述第二像素层的每个像素包括多个子像素，所述第二像素层的每个子像素包括一个微型发光二极管Micro LED器件，其中，所述第二像素层设置在所述驱动电路背板上方，围绕所述第一像素层，且所述第二像素层的面积小于所述第一像素层的面积，所述第二像素层的每个子像素的Micro LED器件与所述驱动电路背板中的至少一个驱动电路单元连接。
  10. 根据权利要求9所述的显示屏，其特征在于，所述Micro LED器件为倒装型Micro LED器件，所述倒装型Micro LED器件包括P极和N极，所述P极和N极位于所述倒装型Micro LED器件同一侧。
  11. 根据权利要求10所述的显示屏，其特征在于，所述倒装型Micro LED器件的P极或N极与至少一个驱动电路单元连接。
  12. 根据权利要求11所述的显示屏，其特征在于，所述显示屏还包括薄膜封装层，所述薄膜封装层覆盖所述第一像素层和所述第二像素层。
  13. 根据权利要求12所述的显示屏，其特征在于，所述驱动电路单元为2T1C驱动电路单元或5T1C驱动电路单元。
  14. 根据权利要求13所述的显示屏，其特征在于，所述倒装型Micro LED器件的驱动电路单元与电源的负电压连接，所述倒装型Micro LED器件的P极与电源的正电压连接。
  15. 根据权利要求9至14所述的显示屏，其特征在于，所述第二像素层的子像素排列方式为Pentile排列或Bayer排列。
  16. 根据权利要求14所述的显示屏，其特征在于，所述倒装型Micro LED器件通过键合方式与所述驱动电路单元连接，或，
    所述薄膜封装层包括第一无机封装层，第二有机封装层和第三无机封装层，或，
    所述显示屏还包括钝化层，所述钝化层设置于所述驱动电路背板上方，所述第一像素层和所述第二像素层的下方，或，
    所述显示屏还包括平坦化层，所述平坦化层设置于驱动电路背板上方，所述第一像素层和所述第二像素层的下方，或，
    所述显示屏还包括遮光层，所述遮光层设置于所述驱动电路背板上方，覆盖所述第一电极层，或，
    所述第一电极层和所述第二电极层为不透明电极层。
  17. 一种电子设备，其特征在于，包括显示屏和电池；
    所述显示屏包括：
    基板，用于承载所述显示屏的元器件；
    驱动电路背板，包括多个驱动电路单元，所述驱动电路背板设置在所述基板上方；
    第一像素层，包括多个像素，所述第一像素层的每个像素包括多个子像素，所述第一 像素层的每个子像素包括一个有机发光二极管OLED器件，其中，所述第一像素层设置在所述驱动电路背板上方，所述第一像素层的每个子像素的OLED器件与所述驱动电路背板中的至少一个驱动电路单元连接；
    第二像素层，包括第一电极层，第二电极层以及设置在所述第一电极层和所述第二电极层之间的多个像素，所述第二像素层的每个像素包括多个子像素，所述第二像素层的每个子像素包括一个微型发光二极管Micro LED器件，其中，所述第二像素层设置在所述基板上方，围绕所述第一像素层，且所述第二像素层的面积小于所述第一像素层的面积；
    其中，所述驱动电路背板，所述第一电极层和所述第二电极层与所述电池耦合。
  18. 根据权利要求17所述的电子设备，其特征在于，所述Micro LED器件为垂直型Micro LED器件，所述垂直型Micro LED器件包括顶部电极和底部电极，其中，所述第二电极层在所述第一电极层上方，所述垂直型Micro LED器件的底部电极与所述第一电极层连接，所述垂直型Micro LED器件的顶部电极与所述第二电极层连接。
  19. 根据权利要求18所述的电子设备，其特征在于，所述第二像素层还包括钝化层，所述钝化层设置于所述第一电极层和所述第二电极层之间，且覆盖所述垂直型Micro LED器件。
  20. 根据权利要求19所述的电子设备，其特征在于，其中所述钝化层在所述垂直型Micro LED器件的顶部电极上方设置有开口，所述顶部电极通过所述开口与所述第二电极层连接。
  21. 根据权利要求19所述的电子设备，其特征在于，每个驱动电路单元包括多个晶体管，所述驱动电路背板的所有晶体管的源极和漏极组成第三电极层，所述驱动电路背板的所有晶体管的栅极组成第四电极层，所述第一电极层与所述第三电极层或所述第四电极层位于同一层。
  22. 根据权利要求17至21所述的电子设备，其特征在于，所述第一电极与所述电池的正电压连接，所述第二电极与所述电池的负电压连接。
  23. 根据权利要求17至21所述的电子设备，其特征在于，所述第二像素层的子像素排列方式为Pentile排列或Bayer排列。
  24. 根据权利要求21所述的电子设备，其特征在于，所述显示屏还包括薄膜封装层，所述薄膜封装层设置于所述第二电极上方，覆盖所述第二电极，或，
    所述显示屏还包括遮光层，所述遮光层设置于所述驱动电路背板上方，覆盖所述第一电极层，或，
    所述垂直型Micro LED器件包括n型掺杂层和p型掺杂层，所述n型掺杂层与所述垂直型Micro LED器件顶部电极连接，所述p型掺杂层与所述垂直型Micro LED器件底部电极连接，或，
    所述第一电极层为不透明电极层，所述第二电极层为透明电极层，或，
    所述垂直型Micro LED器件通过键合方式与所述第一电极层连接。
  25. 一种电子设备，其特征在于，包括显示屏和电池；
    所述显示屏包括：
    基板，用于承载所述显示屏的元器件；
    驱动电路背板，包括多个驱动电路单元，所述驱动电路背板设置在所述基板上方，与所述电池耦合；
    第一像素层，包括多个像素，所述第一像素层的每个像素包括多个子像素，所述第一像素层的每个子像素包括一个有机发光二极管OLED器件，其中，所述第一像素层设置在所述驱动电路背板上方，所述第一像素层的每个子像素的OLED器件与所述驱动电路背板中的至少一个驱动电路单元连接；
    第二像素层，包括多个像素，所述第二像素层的每个像素包括多个子像素，所述第二像素层的每个子像素包括一个微型发光二极管Micro LED器件，其中，所述第二像素层设置在所述驱动电路背板上方，围绕所述第一像素层，且所述第二像素层的面积小于所述第一像素层的面积，所述第二像素层的每个子像素的Micro LED器件与所述驱动电路背板中的至少一个驱动电路单元连接。
  26. 根据权利要求25所述的电子设备，其特征在于，所述Micro LED器件为倒装型Micro LED器件，所述倒装型Micro LED器件包括P极和N极，所述P极和N极位于所述倒装型Micro LED器件同一侧。
  27. 根据权利要求26所述的电子设备，其特征在于，所述倒装型Micro LED器件的P极或N极与至少一个驱动电路单元连接。
  28. 根据权利要求27所述的电子设备，其特征在于，所述显示屏还包括薄膜封装层，所述薄膜封装层覆盖所述第一像素层和所述第二像素层。
  29. 根据权利要求28所述的电子设备，其特征在于，所述驱动电路单元为2T1C驱动电路单元或5T1C驱动电路单元。
  30. 根据权利要求29所述的电子设备，其特征在于，所述倒装型Micro LED器件的驱动电路单元与所述电池的负电压连接，所述倒装型Micro LED器件的P极与所述电池的正电压连接。
  31. 根据权利要求25至30所述的电子设备，其特征在于，所述第二像素层的子像素排列方式为Pentile排列或Bayer排列。
  32. 根据权利要求30所述的电子设备，其特征在于，所述倒装型Micro LED器件通过键合方式与所述驱动电路单元连接，或，
    所述薄膜封装层包括第一无机封装层，第二有机封装层和第三无机封装层，或，
    所述显示屏还包括钝化层，所述钝化层设置于所述驱动电路背板上方，所述第一像素层和所述第二像素层的下方，或，
    所述显示屏还包括平坦化层，所述平坦化层设置于驱动电路背板上方，所述第一像素层和所述第二像素层的下方，或，
    所述显示屏还包括遮光层，所述遮光层设置于所述驱动电路背板上方，覆盖所述第一电极层，或，
    所述第一电极层和所述第二电极层为不透明电极层。
  33. 一种显示屏制作方法，其特征在于，包括：
    提供基板；
    在所述基板上制作驱动电路背板，所述驱动电路背板包括多个驱动单元和电极层；
    在所述驱动电路背板包括所述驱动单元的区域上方制作第一像素层，所述第一像素层由有机发光二极管OLED器件组成；
    在所述驱动电路背板包括电极层的区域上方制作第二像素层，所述第二像素层由微型发光二极管Micro LED器件组成。
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CN113574585B (zh) 2024-03-08
US20220149024A1 (en) 2022-05-12
EP3905226A4 (en) 2021-12-22
KR20210110655A (ko) 2021-09-08
JP7259046B2 (ja) 2023-04-17

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