WO2020124916A1 - 全屏显示面板及其制作方法 - Google Patents

全屏显示面板及其制作方法 Download PDF

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Publication number
WO2020124916A1
WO2020124916A1 PCT/CN2019/084077 CN2019084077W WO2020124916A1 WO 2020124916 A1 WO2020124916 A1 WO 2020124916A1 CN 2019084077 W CN2019084077 W CN 2019084077W WO 2020124916 A1 WO2020124916 A1 WO 2020124916A1
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Prior art keywords
layer
crack
array substrate
organic
full
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Ceased
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PCT/CN2019/084077
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English (en)
French (fr)
Inventor
李雪
孙亮
曾勉
王硕晟
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US16/603,849 priority Critical patent/US20200280021A1/en
Publication of WO2020124916A1 publication Critical patent/WO2020124916A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment

Definitions

  • the invention relates to the field of display technology, in particular to a flexible full-screen display panel and a manufacturing method thereof.
  • OLED Organic Light-Emitting Diode
  • LCD liquid crystal display
  • the design of "full screen” has become the mainstream of the times, and all supplier units are focusing on the development of full screen products with a relatively high screen share.
  • the iPhone X mobile phone uses a notch (Notch) screen design, the screen ratio can reach 81.15%.
  • the recently developed under-screen camera design is an O-Cut screen design.
  • An "O" slot is cut in the display (Panel) for placing the camera.
  • the O-Cut design is more Approaching the full screen effect, the size of the O-Cut area only needs to consider the front camera. Therefore, the O-Cut area is much smaller than the proportion of the Notch area in the entire Panel, and the advantages of the full screen designed by the O-Cut are more obvious. Therefore, it has a great advantage in the mobile phone display screen market.
  • O-Cut design is closer to a full screen, it also faces technical difficulties, and in the OLED flexible display (Flexible It is particularly difficult to implement O-Cut design in display).
  • the production of OLED panels is generally carried out as follows: first, a flexible substrate substrate is formed, and then a thin film transistor (Thin) is formed on the flexible substrate substrate in sequence Film Transistor, TFT) Array layer, OLED layer and thin film encapsulation layer, and finally O-Cutting process, using laser (Laser) for cutting and opening, in the effective display (Active Area, AA) area of Panel, cutting Remove the "O" shaped area to form an "O" shaped slot for placing the camera.
  • the hole injection layer, hole transport layer, light emitting layer, electron transport layer, electron injection layer, cathode layer, etc. are Using the Open Mask evaporation process, after cutting the O-Cut area, the OLED organic layer will be exposed on the cutting surface, at this time, water vapor will be immersed from this position, which will make the Panel lose functionality. And due to the physical characteristics of the inorganic film layers in the TFT array layer and the thin film encapsulation layer, these inorganic film layers are prone to cracking and crack extension during the O-Cutting process, which subsequently affects the reliability of the Panel.
  • the purpose of the present invention is to provide a full-screen display panel.
  • the cut peripheral area of the opening is provided with a retaining wall and a crack-resistant structure, which can block the crack extension of the inorganic film layer during the cutting process.
  • the object of the present invention is also to provide a method for manufacturing a full-screen display panel. By optimizing the peripheral structure of the cutting area, the crack extension of the inorganic film layer during the cutting process can be blocked.
  • the present invention provides a full-screen display panel including an array substrate, an OLED functional layer provided on the array substrate, and a thin film encapsulation layer covering the OLED functional layer on the array substrate;
  • the full-screen display panel is provided with openings formed by cutting through the upper and lower surfaces thereof;
  • the array substrate includes multiple inorganic insulating layers, multiple organic layers provided on the multiple inorganic insulating layers, and multiple metal layers provided between the inorganic insulating layer and the organic layer;
  • the array substrate is provided with a circle of first retaining walls, a circle of second retaining walls and a circle of main anti-cracking structures in this order from the periphery of the opening toward the opening from far to near;
  • the main anti-crack structure includes an anti-crack channel provided in the multilayer inorganic insulating layer and an organic anti-crack bar corresponding to the filled anti-crack channel;
  • the first retaining wall, the second retaining wall and the organic anti-crack strip are formed by the organic layer of the array substrate.
  • the distance between the second retaining wall and the opening is greater than or equal to 350 ⁇ m;
  • the height of the second retaining wall is greater than the height of the first retaining wall.
  • the array substrate is provided with one or more metal windings around the opening on both sides of the main anti-cracking structure in an area corresponding to the opening and the second retaining wall;
  • the metal winding is formed by the metal layer of the array substrate.
  • the array substrate is further provided with one or more rounds of auxiliary anti-crack structures in an area corresponding to the openings and the anti-crack structures;
  • the auxiliary crack-resistant structure includes crack-resistant slits provided in the multilayer inorganic insulating layer and organic crack-resistant windings corresponding to the filled crack-resistant slits;
  • the organic anti-crack winding is formed by the organic layer of the array substrate.
  • the multi-layer inorganic insulating layer includes a buffer layer, a gate insulating layer and an interlayer insulating layer which are sequentially arranged from bottom to top;
  • the multilayer organic layer includes a flat layer, a pixel definition layer and a spacer layer;
  • the first retaining wall is formed by the flat layer and the pixel definition layer
  • the second retaining wall is formed by the flat layer, the pixel definition layer and the spacer layer;
  • the organic anti-crack bar and the organic anti-crack winding are formed by the flat layer.
  • a spacing bar is provided in the anti-crack channel, and the anti-crack channel is inverted m-shaped in its longitudinal section;
  • the bottom of the organic anti-crack bar is embedded in the anti-crack channel in the shape of a tooth root.
  • the multilayer metal layer includes a gate metal layer and a source-drain metal layer
  • the metal winding is formed by the gate metal layer or the source-drain metal layer, or is formed by the gate metal layer and the source-drain metal layer together.
  • the invention also provides a method for manufacturing a full-screen display panel, including the following steps:
  • Step S1 manufacturing and forming an array substrate
  • the array substrate includes multiple inorganic insulating layers, multiple organic layers provided on the multiple inorganic insulating layers, and multiple metal layers provided between the inorganic insulating layer and the organic layer;
  • Step S2 forming an OLED functional layer by vapor deposition on the array substrate
  • Step S3 covering the array substrate with the thin film encapsulation layer of the OLED functional layer to obtain a panel to be cut;
  • Step S4 Using a laser to cut the panel to be cut along the edge of the cutting area to form an opening
  • the area where the opening is formed by the array substrate corresponding to the cut is a cutting area
  • the area around the peripheral area of the array substrate is a cutting peripheral area
  • the array substrate faces the cutting area
  • the cutting area is provided with a circle of first retaining wall, a circle of second retaining wall and a circle of main anti-cracking structure in order from far and near;
  • the main anti-crack structure includes an anti-crack channel provided in the multilayer inorganic insulating layer and an organic anti-crack bar corresponding to the filled anti-crack channel;
  • the first retaining wall, the second retaining wall and the organic anti-crack strip are formed by the organic layer of the array substrate.
  • the multilayer inorganic insulating layer of the array substrate is completely excavated and removed in the cutting area.
  • the step S2 further includes, after forming the OLED functional layer by evaporation, using a laser to remove the portion of the OLED functional layer corresponding to the cutting peripheral area;
  • the panel to be cut is cut from the upper side and the lower side of the panel to be cut using a laser.
  • a full-screen display panel provided by the present invention includes an array substrate, an OLED functional layer provided on the array substrate, and a thin film encapsulation layer covering the OLED functional layer on the array substrate.
  • the full-screen display panel is provided with an opening formed through cutting through the upper and lower surfaces thereof, and the array substrate is provided with a circle of first retaining walls and a circle of second in order from the periphery of the opening to the opening from far to near Retaining wall and a ring of main anti-crack structure, the main anti-crack structure includes an anti-crack channel dug in the multi-layer inorganic insulating layer and an organic anti-crack bar corresponding to the filled anti-crack communication, the present invention
  • the structure of the peripheral area of the hole is optimized to prevent the crack extension of the inorganic film layer in the array substrate and the thin-film encapsulation layer caused by the hole-cutting process.
  • the manufacturing method of the full-screen display panel of the present invention can prevent the crack extension of the inorganic
  • FIG. 1 is a schematic cross-sectional structure diagram of a full-screen display panel of the present invention at an opening;
  • FIG. 2 is a schematic plan view of a full-screen display panel of the present invention and a partially enlarged schematic view of an opening;
  • FIG. 3 is a schematic flow chart of a method for manufacturing a full-screen display panel of the present invention.
  • step S4 is a schematic diagram of step S4 of the method for manufacturing a full-screen display panel of the present invention.
  • the present invention first provides a full-screen display panel, including an array substrate 1, an OLED functional layer 2 disposed on the array substrate 1, and covering the OLED functional layer 2 on the array substrate 1 ⁇ encapsulation layer 3.
  • the full-screen display panel of the present invention adopts the O-Cut design, which is provided with an O-shaped opening 5 formed by cutting through the upper and lower surfaces thereof, for subsequent placement of a camera or other components.
  • the array substrate 1 includes multiple inorganic insulating layers 11, a multiple organic layer 12 provided on the multiple inorganic insulating layer 11, and a multiple metal layer 13 provided between the organic layer 12 and the inorganic insulating layer 11 1.
  • a semiconductor layer (not shown) provided between the multilayer inorganic insulating layers 11 and a pixel electrode layer provided between the multilayer organic layers 12.
  • the multilayer inorganic insulating layer 11 includes a buffer layer, a gate insulating layer, and an interlayer insulating layer (not shown).
  • the multilayer organic layer 12 includes a flat layer, a pixel definition layer, and a spacer layer (not shown).
  • the multilayer metal layer 13 includes a gate metal layer and a source-drain metal layer (not shown).
  • the multi-layer metal layer and the semiconductor layer jointly form a plurality of TFT devices 16 and metal traces 15.
  • the plurality of TFT devices 16 and metal traces 15 avoid the cutting area and the surrounding area of the opening 5. Production formation.
  • the pixel electrode layer is provided on the flat layer
  • the pixel definition layer is provided on the pixel electrode layer and the flat layer
  • a plurality of pixel openings are enclosed in the pixel electrode layer ).
  • the spacer layer is provided on the pixel definition layer, and is used to support the mask plate when the OLED functional layer 2 is formed by evaporation.
  • the OLED functional layer 2 includes a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, and a cathode layer.
  • the OLED functional layer 2 and the pixel electrode layer together form multiple OLED devices.
  • the portion of the OLED functional layer 2 corresponding to the cutting peripheral area is removed, and the OLED functional layer 2 is located in the effective display area outside the cutting peripheral area, so that the thin film encapsulation layer 3 covers its periphery in the cutting peripheral area Effective protection is provided to prevent it from being exposed on the cut surface of the opening 5 and being invaded by moisture.
  • the thin-film encapsulation layer 3 includes an inorganic barrier layer 31 and an organic buffer layer 32 that are alternately stacked, wherein the inorganic barrier layer 31 is one more in number than the organic buffer layer 32.
  • the array substrate 1 is provided with a circle of the first retaining wall 10, a circle of the second retaining wall 20 and a circle of main anti-cracking in order from the farthest and the nearest to the opening 5 of the cutting substrate area of the periphery of the opening 5 Structure (Anti-Crack) 30.
  • first retaining wall 10 and the second retaining wall 20 can play a blocking role when inkjet printing (IJP) forms the organic buffer layer 32 of the thin film encapsulation layer 3, so that the ink used to form the organic buffer layer 32 is It is beyond the first retaining wall 10.
  • IJP inkjet printing
  • the height of the second retaining wall 20 is greater than the height of the first retaining wall 10.
  • the first retaining wall 10 and the second retaining wall 20 are both formed by the organic layer 12 of the array substrate 1, and the second retaining wall 20 involves more organic layers 12 than the first barrier The layer of the organic layer 12 involved in the wall 10.
  • the first barrier wall 10 is formed by the flat layer and the pixel definition layer; the second barrier wall 20 is formed by the flat layer, the pixel definition layer and the spacer layer.
  • the distance between the second blocking wall 20 and the edge of the cut area of the opening 5 needs to be greater than or equal to 350 ⁇ m, so as to ensure the packaging effect of the thin film encapsulation layer 3 on the effective display area, and to block the opening 5
  • Cracks of the inorganic film layers such as the inorganic insulating layer 11 in the array substrate 1 and the inorganic barrier layer 31 in the thin-film encapsulation layer 3 caused by the dicing process extend into the effective display area, thereby avoiding subsequent influence on the reliability of the full-screen display panel.
  • the anti-crack channel 35 dug in the multilayer inorganic insulating layer 11 and the organic anti-crack bar 36 corresponding to the filled anti-crack channel 35 together constitute the main anti-crack structure 30.
  • the O-Cutting process of the opening 5 will cut on the inorganic barrier layer 31 of the thin film encapsulation layer 3, although the cutting edge has a certain safety distance from the second retaining wall 20, but the Crack problem There are still hidden dangers, therefore, the crack resistance can be further blocked by the main anti-crack structure 30.
  • the design of the anti-crack channel 35 is more conducive to blocking the cracks from extending along the inorganic film layer and playing a blocking role.
  • the organic anti-crack strip 36 of the organic material can play a buffering role and further weaken the inorganic of the thin film encapsulation layer 3 The phenomenon in which the crack of the barrier layer 31 extends.
  • a space bar is left in the anti-cracking channel 35, so that the anti-cracking channel 35 has an inverted m shape in its longitudinal section; then in the longitudinal section of the main anti-cracking structure 30, the The bottom of the organic anti-crack strip 36 is embedded in the anti-crack channel 35 in the shape of a tooth root.
  • the array substrate 1 is provided with one or more holes surrounding the openings 5 and the second retaining wall 20 on both sides of the main anti-cracking structure 30 respectively. 5 metal winding 40, then in the cutting process of the opening 5, when a crack extends along the inorganic film layer to this position, the metal winding 40 will block a part of the crack.
  • the metal winding 40 is formed by the metal layer 13 of the array substrate 1; further, the metal winding 40 is formed by the gate metal layer or the source-drain metal layer, or by the gate metal The layer is formed together with the source and drain metal layers.
  • the array substrate 1 is further provided with one or more rings of auxiliary anti-crack structures 50 in the area corresponding to the opening 5 and the anti-crack structure 30.
  • the crack-resistant slit 55 dug in the multilayer inorganic insulating layer 11 and the organic crack-resistant winding 56 corresponding to the crack-resistant slit 55 together constitute the auxiliary crack-resistant structure 50 to form the opening 5
  • the blocking effect on the crack extension of the inorganic film layers such as the inorganic insulating layer 11 in the array substrate 1 and the inorganic barrier layer 31 in the thin-film encapsulation layer 3 is strengthened.
  • the organic anti-crack strip 36 and the organic anti-crack winding 56 are formed by the flat layer.
  • the full-screen display panel of the present invention adopts the O-Cut design.
  • the full-screen display panel is provided with openings 5 formed by cutting through the upper and lower surfaces thereof.
  • the present invention optimizes the structure of the cut peripheral area of the openings 5 by A circle of the first retaining wall 10, a circle of the second retaining wall 20 and a circle of the main anti-cracking structure 30 are arranged in order from the far to the near of the periphery of the opening 5 toward the opening 5 to effectively block the cutting process caused by the opening
  • the cracks of the inorganic film layer in the array substrate and the thin film encapsulation layer extend, so as to avoid subsequent influence on the reliability of the full-screen display panel.
  • the present invention also provides a method for manufacturing a full-screen display panel.
  • the manufacturing method includes the following steps:
  • Step S1 Fabricate and form the array substrate 10.
  • the array substrate 1 includes a multilayer inorganic insulating layer 11, a multilayer organic layer 12 provided on the multilayer inorganic insulating layer 11, a multilayer metal layer 13 provided between the multilayer inorganic insulating layers 11, A semiconductor layer between the organic layer 12 and the inorganic insulating layer 11 and a pixel electrode layer provided between the multilayer organic layers 12.
  • the multilayer inorganic insulating layer 11 includes a buffer layer, a gate insulating layer, and an interlayer insulating layer.
  • the multilayer organic layer 12 includes a flat layer, a pixel definition layer, and a spacer layer.
  • the multilayer metal layer 13 includes a gate metal layer and a source-drain metal layer.
  • the multi-layer metal layer and the semiconductor layer together form a plurality of TFT devices 16 and metal traces 15, the plurality of TFT devices 16 and metal traces 15 avoid the cutting area and the cutting periphery of the opening 5 Area.
  • the pixel electrode layer is provided on the flat layer
  • the pixel definition layer is provided on the pixel electrode layer and the flat layer
  • a plurality of pixel openings are enclosed on the pixel electrode layer.
  • the spacer layer is provided on the pixel definition layer, and is used to support the mask plate when the OLED functional layer 2 is formed by evaporation.
  • Step S2 an OLED functional layer 2 is formed on the array substrate 10 by mask evaporation.
  • the OLED functional layer 2 includes a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, a cathode layer, and the like.
  • the OLED functional layer 2 and the pixel electrode layer together form multiple OLED devices.
  • the step S2 further includes, after forming the OLED functional layer 2 by evaporation, using a laser to remove the portion of the OLED functional layer 2 corresponding to the cutting peripheral region, so that the OLED functional layer 2 is located outside the cutting peripheral region
  • the subsequent thin film encapsulation layer 3 can protect the periphery of the OLED functional layer 2 in the cutting peripheral area, preventing the OLED functional layer 2 from being exposed on the cutting surface of the opening 5 and being invaded by moisture.
  • Step S3 Cover the thin film encapsulation layer 3 of the OLED functional layer 2 on the array substrate 1 to obtain a panel to be cut.
  • the thin-film encapsulation layer 3 includes an inorganic barrier layer 31 and an organic buffer layer 32 that are alternately stacked, wherein the inorganic barrier layer 31 is one more in number than the organic buffer layer 32.
  • Step S4 As shown in FIG. 4, the panel to be cut is cut with a laser to form an opening 5.
  • the area where the opening 5 is formed by the array substrate 1 corresponding to the cut is a cutting area
  • the area around the periphery of the cutting area of the array substrate 1 is a cutting peripheral area
  • the array substrate 1 A circle of the first retaining wall 10, a circle of the second retaining wall 20 and a circle of the main anti-cracking structure 30 are provided in order from the farthest and the nearest to the opening 5 in the peripheral cutting area around the opening 5.
  • the first retaining wall 10 and the second retaining wall 20 may play a blocking role when forming the organic buffer layer 32 of the thin film encapsulation layer 3 by inkjet printing, so as to form an organic The ink of the buffer layer 32 is blocked outside the first retaining wall 10.
  • the height of the second retaining wall 20 is greater than the height of the first retaining wall 10.
  • the first retaining wall 10 and the second retaining wall 20 are both formed by the organic layer 12 of the array substrate 1, and the second retaining wall 20 involves more organic layers 12 than the first barrier The layer of the organic layer 12 involved in the wall 10.
  • the first barrier wall 10 is formed by the flat layer and the pixel definition layer; the second barrier wall 20 is formed by the flat layer, the pixel definition layer and the spacer layer.
  • the distance between the second blocking wall 20 and the edge of the cutting area of the opening 5 needs to be greater than or equal to 350 ⁇ m, so as to ensure the packaging effect of the thin film encapsulation layer 3 on the effective display area, and the opening 5 Cracks in the inorganic film layers such as the inorganic insulating layer 11 in the array substrate 1 and the inorganic barrier layer 31 in the thin-film encapsulation layer 3 caused by the dicing process will not extend into the effective display area, thereby avoiding subsequent influence on the reliability of the full-screen display panel.
  • the crack resistance can be further blocked by the main anti-crack structure 30.
  • the design of the anti-crack channel 35 is more conducive to blocking cracks from extending along the inorganic film layer, and plays a blocking role.
  • the organic anti-crack strip 36 of the organic material can play a buffering role, further weakening the inorganic barrier of the thin film encapsulation layer 3 The phenomenon of layer 31 crack extension.
  • the anti-crack channel 35 dug in the multilayer inorganic insulating layer 11 and the organic anti-crack bar 36 corresponding to the filled anti-crack channel 35 together constitute the main anti-crack structure 30.
  • a space bar is left in the anti-cracking channel 35, so that the anti-cracking channel 35 has an inverted m shape in its longitudinal section; then in the longitudinal section of the main anti-cracking structure 30, the The bottom of the organic anti-crack strip 36 is embedded in the anti-crack channel 35 in the shape of a tooth root.
  • the array substrate 1 is provided with one or more holes surrounding the openings 5 and the second retaining wall 20 on both sides of the main anti-cracking structure 30 respectively. 5's metal winding 40.
  • the metal winding 40 is formed by the metal layer 13 of the array substrate 1; further, the metal winding 40 is formed by the gate metal layer or the source-drain metal layer, or by the gate metal The layer is formed together with the source and drain metal layers.
  • the metal winding 40 may block a part of the crack extension when a crack extends along the inorganic film layer to its position.
  • the array substrate 1 is further provided with one or more rings of auxiliary anti-crack structures 50 in the area corresponding to the opening 5 and the anti-crack structure 30.
  • the crack-resistant slit 55 dug in the multilayer inorganic insulating layer 11 and the organic crack-resistant winding 56 corresponding to the crack-resistant slit 55 together constitute the auxiliary crack-resistant structure 50 In order to enhance the blocking effect on the crack extension of the inorganic film layers such as the inorganic insulating layer 11 in the array substrate 1 and the inorganic barrier layer 31 in the thin-film encapsulation layer 3 during the cutting process of the opening 5.
  • the organic anti-crack strip 36 and the organic anti-crack winding 56 are formed by the flat layer.
  • the multilayer inorganic insulating layer 11 of the array substrate 1 is completely dug away in the cutting area. Because the inorganic film layer is prone to crack, and the multilayer inorganic insulating layer 11 of the array substrate 1 is completely excavated and removed in the cutting area, it will fundamentally reduce the possibility of cracks.
  • a laser is used to cut the panel to be cut from the upper side and the lower side of the panel to be cut, thereby reducing the phenomenon that more cracks are generated due to excessive single-sided cutting energy.
  • the manufacturing method of the full-screen display panel of the present invention can effectively block the crack extension of the inorganic film layer in the array substrate 1 and the thin-film encapsulation layer 3 during the cutting process.
  • a full-screen display panel provided by the present invention includes an array substrate, an OLED functional layer provided on the array substrate, and a thin film encapsulation layer covering the OLED functional layer on the array substrate, the A full-screen display panel is provided with an opening formed through cutting through the upper and lower surfaces thereof, and the array substrate is provided with a circle of first retaining walls and a circle of second retaining in order from the periphery of the opening to the opening from far to near
  • the wall and a circle of main anti-cracking structure the main anti-cracking structure includes the anti-cracking channel arranged in the multilayer inorganic insulating layer and the corresponding organic anti-cracking bar filled with anti-cracking communication, the invention cuts through the opening
  • the structural optimization of the peripheral area can prevent the crack extension of the inorganic film layer in the array substrate and the thin film encapsulation layer caused by the opening cutting process.
  • the manufacturing method of the full-screen display panel of the present invention can prevent the crack extension of the inorganic film layer in the array substrate and the

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Abstract

一种全屏显示面板及其制作方法。全屏显示面板包括阵列基板、OLED功能层及薄膜封装层，全屏显示面板内设有通过切割形成的贯穿其上下表面的开孔，阵列基板在开孔外围向开孔由远及近依次设有一圈第一挡墙、一圈第二挡墙及一圈主抗裂结构，主抗裂结构包括设置在多层无机绝缘层挖出的抗裂沟道及对应填充抗裂沟道的有机抗裂条，通过对开孔的切割外围区域进行结构优化，可阻挡由开孔的切割制程引起的阵列基板及薄膜封装层中无机膜层的裂纹延伸。

Description

全屏显示面板及其制作方法 技术领域
本发明涉及显示技术领域，尤其涉及一种柔性全屏显示面板及其制作方法。
 背景技术
在平板显示技术中，有机电致发光（Organic Light-Emitting Diode，OLED）显示器具有轻薄、主动发光、响应速度快、可视角大、色域宽、亮度高、功耗低及可制备柔性屏等诸多优异特性，引起了科研界和产业界极大的兴趣，逐渐成为继液晶显示器(Liquid crystal displays，LCD)后的第三代显示技术。
现如今“全面屏”的设计成为时代的主流，各供应商单位都专注于研发屏占比较高的全面屏产品。例如iPhone X手机采用的异形(Notch)屏设计，屏占比可达到81.15%。近期兴起的屏下摄像头设计即O型切割（O-Cut）屏设计，在显示屏（Panel）内切割出“O”形槽，用于放置摄像头，与Notch设计相比，O-Cut设计更趋近于全面屏效果，O-Cut区域的大小，仅考虑前置摄像头即可，因此，O-Cut区域远小于Notch区域所占整个Panel的比例，O-Cut设计的全面屏优势更为明显，因此在手机显示屏幕市场占有很大的优势。
O-Cut设计虽然更趋近于全面屏，但也面临技术难题，且在OLED柔性显示器（Flexible display）中实现O-Cut设计，显得尤为困难。目前，对于OLED面板的制作大致按照如下步骤进行：首先制作形成柔性衬底基板，然后在柔性衬底基板上依次制作形成薄膜晶体管（Thin Film Transistor，TFT）阵列（Array）层、OLED层及薄膜封装层，最后进行O-Cutting制程，利用激光（Laser）进行切割开孔，在Panel的有效显示（Active Area，AA）区部分，切割掉“O”形区域，形成用于放置摄像头的“O”形槽。对于O-Cut区域，虽然Array段的器件及走线等可以进行避让，但在OLED制程中，空穴注入层、空穴传输层、发光层、电子传输层、电子注入层、阴极层等是利用开放式掩膜板（Open Mask）蒸镀生成，在对O-Cut区域进行切割后，OLED有机层会在切割面外露，此时水汽就会从该位置浸入，从而使Panel失去功能性，并由于TFT阵列层及薄膜封装层中无机膜层的物理特性，这些无机膜层很容易在O-Cutting制程中发生破裂（Crack）并产生裂纹延伸的现象，进而后续影响Panel的信赖性。
 技术问题
本发明的目的在于提供一种全屏显示面板，开孔的切割外围区域设有挡墙及抗裂结构，可阻挡无机膜层在切割制程中产生的裂纹延伸。
本发明的目的还在于提供一种全屏显示面板的制作方法，通过对切割区域进行外围结构优化设计，可阻挡无机膜层在切割制程中产生的裂纹延伸。
 技术解决方案
为实现上述目的，本发明提供一种全屏显示面板，包括阵列基板、设于所述阵列基板上的OLED功能层及在所述阵列基板上覆盖所述OLED功能层的薄膜封装层；
所述全屏显示面板内设有通过切割形成的贯穿其上下表面的开孔；
所述阵列基板包括多层无机绝缘层、设于多层无机绝缘层上的多层有机层及设于无机绝缘层与有机层之间的多层金属层；
所述阵列基板在所述开孔外围向该开孔由远及近依次设有一圈第一挡墙、一圈第二挡墙及一圈主抗裂结构；
所述主抗裂结构包括设置在所述多层无机绝缘层的抗裂沟道及对应填充抗裂沟道的有机抗裂条所组成；
所述第一挡墙、第二挡墙及有机抗裂条由所述阵列基板的有机层形成。
所述第二挡墙与所述开孔之间的距离大于等于350μm；
所述第二挡墙的高度大于所述第一挡墙的高度。
所述阵列基板在对应所述开孔与第二挡墙之间的区域在所述主抗裂结构两侧分别设有一条或多条的环绕所述开孔的金属绕线；
所述金属绕线由所述阵列基板的金属层形成。
所述阵列基板在对应所述开孔与所述抗裂结构之间的区域还设有一圈或多圈辅助抗裂结构；
所述辅助抗裂结构包括设置在所述多层无机绝缘层的抗裂狭缝及对应填充抗裂狭缝的有机抗裂绕线；
所述有机抗裂绕线由所述阵列基板的有机层形成。
所述多层无机绝缘层包括由下至上依次设置的缓冲层、栅极绝缘层及层间绝缘层；
所述多层有机层包括平坦层、像素定义层及隔垫物层；
所述第一挡墙由所述平坦层及像素定义层形成；
所述第二挡墙由所述平坦层、像素定义层及隔垫物层形成；
所述有机抗裂条及有机抗裂绕线由所述平坦层形成。
所述抗裂沟道内设有一间隔条，所述抗裂沟道在其纵切面内呈倒置m形；
在所述主抗裂结构的纵切面内，所述有机抗裂条底部以牙根的形状嵌入所述抗裂沟道内。
所述多层金属层包括栅极金属层及源漏极金属层；
所述金属绕线由所述栅极金属层或源漏极金属层形成，或由栅极金属层与源漏极金属层共同形成。
本发明还提供一种全屏显示面板的制作方法，包括如下步骤：
步骤S1、制作形成阵列基板；
所述阵列基板包括多层无机绝缘层、设于多层无机绝缘层上的多层有机层及设于无机绝缘层与有机层之间的多层金属层；
步骤S2、在所述阵列基板上蒸镀形成OLED功能层；
步骤S3、在所述阵列基板上覆盖所述OLED功能层的薄膜封装层，得到待切割面板；
步骤S4、利用激光沿所述切割区域边缘对待切割面板进行切割，形成开孔；
所述步骤S1中，所述阵列基板在对应切割形成所述开孔的区域为切割区域，所述阵列基板在切割外围区域周边的区域为切割周边区域，所述阵列基板在切割周边区域向该切割区域由远及近依次设有一圈第一挡墙、一圈第二挡墙及一圈主抗裂结构；
所述主抗裂结构包括设置在所述多层无机绝缘层的抗裂沟道及对应填充抗裂沟道的有机抗裂条；
所述第一挡墙、第二挡墙及有机抗裂条由所述阵列基板的有机层形成。
所述步骤S1中，所述阵列基板的所述多层无机绝缘层在切割区域被完全挖掉去除。
所述步骤S2还包括在蒸镀形成OLED功能层之后，利用激光清除所述OLED功能层对应在所述切割外围区域的部分；
所述步骤S4中利用激光从待切割面板上侧及下侧对待切割面板进行切割。
 有益效果
本发明的有益效果：本发明提供的一种全屏显示面板，包括阵列基板、设于所述阵列基板上的OLED功能层及在所述阵列基板上覆盖所述OLED功能层的薄膜封装层，所述全屏显示面板内设有通过切割形成的贯穿其上下表面的开孔，所述阵列基板在所述开孔外围向该开孔由远及近依次设有一圈第一挡墙、一圈第二挡墙及一圈主抗裂结构，所述主抗裂结构包括设置在所述多层无机绝缘层挖出的抗裂沟道及对应填充抗裂沟通的有机抗裂条，本发明通过对开孔的切割外围区域进行结构优化，可阻挡由开孔的切割制程引起的阵列基板及薄膜封装层中无机膜层的裂纹延伸。本发明的全屏显示面板的制作方法，通过对开孔的切割外围区域进行结构优化，可阻挡阵列基板及薄膜封装层中无机膜层在切割制程中产生的裂纹延伸。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
 附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为本发明全屏显示面板在开孔处的剖面结构示意图；
图2为本发明全屏显示面板的平面示意图及在开孔处的局部放大示意图；
图3为本发明全屏显示面板的制作方法的流程示意图；
图4为本发明全屏显示面板的制作方法的步骤S4的示意图。
 本发明的实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1-2，本发明首先提供一种全屏显示面板，包括阵列基板1、设于所述阵列基板1上的OLED功能层2及在所述阵列基板1上覆盖所述OLED功能层2的薄膜封装层3。
具体地，本发明的全屏显示面板采用O-Cut设计，其内设有通过切割形成的贯穿其上下表面的O形的开孔5，用于后续放置摄像头或其他部件。
具体地，所述阵列基板1包括多层无机绝缘层11、设于多层无机绝缘层11上的多层有机层12、设于有机层12与无机绝缘层11之间的多层金属层13、设于多层无机绝缘层11之间的半导体层（未图示）及设于多层有机层12之间的像素电极层。
具体地，所述多层无机绝缘层11包括缓冲层、栅极绝缘层及层间绝缘层（未图示）。
具体地，所述多层有机层12包括平坦层、像素定义层及隔垫物层（未图示）。
具体地，所述多层金属层13包括栅极金属层及源漏极金属层（未图示）。
其中，所述多层金属层、半导体层共同形成了多个TFT器件16及金属走线15，该多个TFT器件16及金属走线15均避开开孔5的切割区域及切割周边区域而制作形成。
具体地，所述像素电极层设于所述平坦层上，所述像素定义层设于所述像素电极层及平坦层上并在所述像素电极层上围出多个像素开口（未图示）。
具体地，所述隔垫物层设于所述像素定义层上，用于在蒸镀形成所述OLED功能层2时对掩膜板进行支撑。
具体地，所述OLED功能层2包括空穴注入层、空穴传输层、发光层、电子传输层、电子注入层、阴极层。
具体地，所述OLED功能层2与所述像素电极层共同形成了多个OLED器件。
具体地，所述OLED功能层2对应在所述切割周边区域的部分被去除掉，所述OLED功能层2位于切割周边区域外的有效显示区域，从而薄膜封装层3在切割周边区域对其外围进行有效保护，防止其在开孔5的切割面外露进而被水汽侵入。
具体地，所述薄膜封装层3包括交替层叠设置的无机阻挡层31及有机缓冲层32，其中无机阻挡层31比有机缓冲层32在数量上多一层。
具体地，所述阵列基板1在所述开孔5外围的切割外围区域向开孔5由远及近依次设有一圈第一挡墙10、一圈第二挡墙20及一圈主抗裂结构（Anti-Crack）30。
其中，所述第一挡墙10、第二挡墙20可在喷墨打印（IJP）形成薄膜封装层3的有机缓冲层32时起到阻挡作用，使得用于形成有机缓冲层32的油墨被截止在第一挡墙10之外。
具体地，所述第二挡墙20的高度大于所述第一挡墙10的高度。所述第一挡墙10、第二挡墙20均由所述阵列基板1的有机层12形成，且所述第二挡墙20所涉及的有机层12的层别多于所述第一挡墙10所涉及的有机层12的层别。
具体地，所述第一挡墙10由所述平坦层及像素定义层形成；所述第二挡墙20由所述平坦层、像素定义层及隔垫物层形成。
具体地，所述第二挡墙20与所述开孔5的切割区域边缘之间的距离需要大于等于350μm，从而以保证薄膜封装层3对有效显示区域的封装效果，以及阻挡由开孔5的切割制程引起的阵列基板1中无机绝缘层11及薄膜封装层3中无机阻挡层31等无机膜层的裂纹（Crack）延伸到有效显示区域内，从而避免后续影响全屏显示面板的信赖性。
具体地，在所述多层无机绝缘层11挖出的抗裂沟道35及对应填充抗裂沟道35的有机抗裂条36共同组成所述主抗裂结构30。
需要说明的，由于开孔5的切割（O-Cutting）制程会切割在薄膜封装层3的无机阻挡层31上，虽然切割边缘距离第二挡墙20已留有一定的安全距离，但Crack问题依然存在隐患，因此，通过所述主抗裂结构30可进一步阻挡裂纹的延伸。该抗裂沟道35的设计，更有利于阻挡裂纹沿无机膜层延伸，起到阻断作用，其次，有机材料的有机抗裂条36可以起到缓冲作用，进一步减弱薄膜封装层3的无机阻挡层31裂纹延伸的现象。
具体地，所述抗裂沟道35内还留有一间隔条，从而所述抗裂沟道35在其纵切面内呈倒置m形；那么在所述主抗裂结构30的纵切面内，所述有机抗裂条36底部以牙根的形状嵌入所述抗裂沟道35内。
具体地，所述阵列基板1在对应所述开孔5与第二挡墙20之间的切割周边区域在所述主抗裂结构30两侧分别设有一条或多条的环绕所述开孔5的金属绕线40，那么在开孔5的切割制程中，当有裂纹沿着无机膜层延伸到该位置时，所述金属绕线40会阻挡一部分裂纹。
具体地，所述金属绕线40由所述阵列基板1的金属层13形成；进一步地，所述金属绕线40由所述栅极金属层或源漏极金属层形成，或由栅极金属层与源漏极金属层共同形成。
具体地，所述阵列基板1在对应所述开孔5与所述抗裂结构30之间的区域还设有一圈或多圈辅助抗裂结构50。
具体地，在所述多层无机绝缘层11挖出的抗裂狭缝55及对应填充抗裂狭缝55的有机抗裂绕线56共同组成所述辅助抗裂结构50，以在开孔5的切割制程中加强对阵列基板1中无机绝缘层11及薄膜封装层3中无机阻挡层31等无机膜层的裂纹延伸的阻挡作用。
具体地，所述有机抗裂条36及有机抗裂绕线56由所述平坦层形成。
本发明的全屏显示面板，采用O-Cut设计，所述全屏显示面板内设有通过切割形成的贯穿其上下表面的开孔5，本发明通过对开孔5的切割外围区域进行结构优化，在所述开孔5外围向开孔5由远及近依次设置一圈第一挡墙10、一圈第二挡墙20及一圈主抗裂结构30，可有效阻挡由开孔的切割制程引起的阵列基板及薄膜封装层中无机膜层的裂纹延伸，从而避免后续影响全屏显示面板的信赖性。
请参阅图3，基于同一发明构思，本发明还提供一种全屏显示面板的制作方法，该制作方法包括如下步骤：
步骤S1、制作形成阵列基板10。
具体地，所述阵列基板1包括多层无机绝缘层11、设于多层无机绝缘层11上的多层有机层12、设于多层无机绝缘层11之间的多层金属层13、设于有机层12与无机绝缘层11之间的半导体层及设于多层有机层12之间的像素电极层。
具体地，所述多层无机绝缘层11包括缓冲层、栅极绝缘层及层间绝缘层。
具体地，所述多层有机层12包括平坦层、像素定义层及隔垫物层。
具体地，所述多层金属层13包括栅极金属层及源漏极金属层。
其中，所述多层金属层、半导体层共同形成了多个TFT器件16及金属走线15，该多个TFT器件16及金属走线15均避开所述开孔5的切割区域及切割周边区域而制作形成。
具体地，所述像素电极层设于所述平坦层上，所述像素定义层设于所述像素电极层及平坦层上并在所述像素电极层上围出多个像素开口。
具体地，所述隔垫物层设于所述像素定义层上，用于后续在蒸镀形成所述OLED功能层2时对掩膜板进行支撑。
步骤S2、在所述阵列基板10上通过掩膜板蒸镀形成OLED功能层2。
具体地，所述OLED功能层2包括空穴注入层、空穴传输层、发光层、电子传输层、电子注入层及阴极层等。
具体地，所述OLED功能层2与所述像素电极层共同形成了多个OLED器件。
具体地，所述步骤S2还包括在蒸镀形成OLED功能层2之后，利用激光清除所述OLED功能层2对应所述切割外围区域的部分，使所述OLED功能层2位于切割周边区域外的有效显示区域内，从而后续薄膜封装层3在切割周边区域可对OLED功能层2外围进行保护，防止OLED功能层2在开孔5的切割面外露进而被水汽侵入。
步骤S3、在所述阵列基板1上覆盖所述OLED功能层2的薄膜封装层3，得到待切割面板。
具体地，所述薄膜封装层3包括交替层叠设置的无机阻挡层31及有机缓冲层32，其中无机阻挡层31比有机缓冲层32在数量上多一层。
步骤S4、如图4所示，利用激光对待切割面板进行切割，形成开孔5。
具体地，所述步骤S1中，所述阵列基板1在对应切割形成所述开孔5的区域为切割区域，所述阵列基板1在切割区域外围周边的区域为切割周边区域，所述阵列基板1在所述开孔5外围的切割外围区域向开孔5由远及近依次设有一圈第一挡墙10、一圈第二挡墙20及一圈主抗裂结构30。
需要说明的是，所述步骤S3中，所述第一挡墙10、第二挡墙20可在喷墨打印形成薄膜封装层3的有机缓冲层32时起到阻挡作用，使得用于形成有机缓冲层32的油墨被截止在第一挡墙10之外。
具体地，所述第二挡墙20的高度大于所述第一挡墙10的高度。所述第一挡墙10、第二挡墙20均由所述阵列基板1的有机层12形成，且所述第二挡墙20所涉及的有机层12的层别多于所述第一挡墙10所涉及的有机层12的层别。
具体地，所述第一挡墙10由所述平坦层及像素定义层形成；所述第二挡墙20由所述平坦层、像素定义层及隔垫物层形成。
具体地，所述第二挡墙20与所述开孔5的切割区域边缘之间的距离需要大于等于350μm，从而以保证薄膜封装层3对有效显示区域的封装效果，以及在开孔5的切割制程引起的阵列基板1中无机绝缘层11及薄膜封装层3中无机阻挡层31等无机膜层的裂纹不会延伸到有效显示区域内，从而避免后续影响全屏显示面板的信赖性。
需要说明的，由于所述步骤S4中开孔5的切割制程会切割在薄膜封装层3的无机阻挡层31上，虽然切割边缘距离第二挡墙20以留有一定的安全距离，但Crack问题依然存在隐患，因此，通过所述主抗裂结构30可进一步阻挡裂纹的延伸。抗裂沟道35的设计，更有利于阻挡裂纹沿无机膜层延伸，起到阻断作用，其次，有机材料的有机抗裂条36可以起到缓冲作用，进一步减弱薄膜封装层3的无机阻挡层31裂纹延伸的现象。
具体地，所述步骤S1中，在所述多层无机绝缘层11挖出的抗裂沟道35及对应填充抗裂沟道35的有机抗裂条36共同组成所述主抗裂结构30。
具体地，所述抗裂沟道35内还留有一间隔条，从而所述抗裂沟道35在其纵切面内呈倒置m形；那么在所述主抗裂结构30的纵切面内，所述有机抗裂条36底部以牙根的形状嵌入所述抗裂沟道35内。
具体地，所述阵列基板1在对应所述开孔5与第二挡墙20之间的切割周边区域在所述主抗裂结构30两侧分别设有一条或多条的环绕所述开孔5的金属绕线40。
具体地，所述金属绕线40由所述阵列基板1的金属层13形成；进一步地，所述金属绕线40由所述栅极金属层或源漏极金属层形成，或由栅极金属层与源漏极金属层共同形成。
进一步地，在所述步骤S4中的开孔5的切割制程中，金属绕线40可以在当有裂纹沿着无机膜层延伸到其所在位置时阻挡一部分裂纹延伸。
具体地，所述阵列基板1在对应所述开孔5与所述抗裂结构30之间的区域还设有一圈或多圈辅助抗裂结构50。
具体地，所述步骤S1中，在所述多层无机绝缘层11挖出的抗裂狭缝55及对应填充抗裂狭缝55的有机抗裂绕线56共同组成所述辅助抗裂结构50，以在开孔5的切割制程中加强对阵列基板1中无机绝缘层11及薄膜封装层3中无机阻挡层31等无机膜层的裂纹延伸的阻挡作用。
具体地，所述有机抗裂条36及有机抗裂绕线56由所述平坦层形成。
具体地，所述步骤S1中，所述阵列基板1的所述多层无机绝缘层11在切割区域被完全挖掉去除。因为，无机膜层容易发生Crack，而将阵列基板1的所述多层无机绝缘层11在切割区域被完全挖掉去除，就会从根本上减少裂纹产生的可能性。
具体地，所述步骤S4中利用激光从待切割面板上侧及下侧对待切割面板进行切割，从而减弱因单面切割能量过大而产生更多裂纹的现象。
本发明的全屏显示面板的制作方法，可有效阻挡阵列基板1及薄膜封装层3中无机膜层在切割制程中产生的裂纹延伸。
综上所述，本发明提供的一种全屏显示面板，包括阵列基板、设于所述阵列基板上的OLED功能层及在所述阵列基板上覆盖所述OLED功能层的薄膜封装层，所述全屏显示面板内设有通过切割形成的贯穿其上下表面的开孔，所述阵列基板在所述开孔外围向该开孔由远及近依次设有一圈第一挡墙、一圈第二挡墙及一圈主抗裂结构，所述主抗裂结构包括设置在所述多层无机绝缘层的抗裂沟道及对应填充抗裂沟通的有机抗裂条，本发明通过对开孔的切割外围区域进行结构优化，可阻挡由开孔的切割制程引起的阵列基板及薄膜封装层中无机膜层的裂纹延伸。本发明的全屏显示面板的制作方法，通过对开孔的切割外围区域进行结构优化，可阻挡阵列基板及薄膜封装层中无机膜层在切割制程中产生的裂纹延伸。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (10)

  1. 一种全屏显示面板，包括阵列基板、设于所述阵列基板上的OLED功能层及在所述阵列基板上覆盖所述OLED功能层的薄膜封装层；
    所述全屏显示面板内设有通过切割形成的贯穿其上下表面的开孔；
    所述阵列基板包括多层无机绝缘层、设于多层无机绝缘层上的多层有机层及设于无机绝缘层与有机层之间的多层金属层；
    所述阵列基板在所述开孔外围向该开孔由远及近依次设有一圈第一挡墙、一圈第二挡墙及一圈主抗裂结构；
    所述主抗裂结构包括设置在所述多层无机绝缘层挖出的抗裂沟道及对应填充抗裂沟道的有机抗裂条；
    所述第一挡墙、第二挡墙及有机抗裂条由所述阵列基板的有机层形成。
  2. 如权利要求1所述的全屏显示面板，其中，所述第二挡墙与所述开孔之间的距离大于等于350μm；
    所述第二挡墙的高度大于所述第一挡墙的高度。
  3. 如权利要求1所述的全屏显示面板，其中，所述阵列基板在对应所述开孔与第二挡墙之间的区域在所述主抗裂结构两侧分别设有一条或多条的环绕所述开孔的金属绕线；
    所述金属绕线由所述阵列基板的金属层形成。
  4. 如权利要求1所述的全屏显示面板，其中，所述阵列基板在对应所述开孔与所述抗裂结构之间的区域还设有一圈或多圈辅助抗裂结构；
    所述辅助抗裂结构包括设置在所述多层无机绝缘层挖出的抗裂狭缝及对应填充抗裂狭缝的有机抗裂绕线；
    所述有机抗裂绕线由所述阵列基板的有机层形成。
  5. 如权利要求4所述的全屏显示面板，其中，所述多层无机绝缘层包括缓冲层、栅极绝缘层及层间绝缘层；
    所述多层有机层包括由下至上依次设置的平坦层、像素定义层及隔垫物层；
    所述第一挡墙由所述平坦层及像素定义层形成；
    所述第二挡墙由所述平坦层、像素定义层及隔垫物层形成；
    所述有机抗裂条及有机抗裂绕线由所述平坦层形成。
  6. 如权利要求1所述的全屏显示面板，其中，所述抗裂沟道内设有一间隔条，所述抗裂沟道在其纵切面内呈倒置m形；
    在所述主抗裂结构的纵切面内，所述有机抗裂条底部以牙根的形状嵌入所述抗裂沟道内。
  7. 如权利要求1所述的全屏显示面板，其中，所述多层金属层包括栅极金属层及源漏极金属层；
    所述金属绕线由所述栅极金属层或源漏极金属层形成，或由栅极金属层与源漏极金属层共同形成。
  8. 一种全屏显示面板的制作方法，包括如下步骤：
    步骤S1、制作形成阵列基板；
    所述阵列基板包括多层无机绝缘层、设于多层无机绝缘层上的多层有机层及设于无机绝缘层与有机层之间的多层金属层；
    步骤S2、在所述阵列基板上蒸镀形成OLED功能层；
    步骤S3、在所述阵列基板上覆盖所述OLED功能层的薄膜封装层，得到待切割面板；
    步骤S4、利用激光沿所述切割区域边缘对待切割面板进行切割，形成开孔；
    所述步骤S1中，所述阵列基板在对应切割形成所述开孔的区域为切割区域，所述阵列基板在切割外围区域周边的区域为切割周边区域，所述阵列基板在切割周边区域向该切割区域由远及近依次设有一圈第一挡墙、一圈第二挡墙及一圈主抗裂结构；
    所述主抗裂结构包括设置在所述多层无机绝缘层的抗裂沟道及对应填充抗裂沟道的有机抗裂条；
    所述第一挡墙、第二挡墙及有机抗裂条由所述阵列基板的有机层形成。
  9. 如权利要求8所述的全屏显示面板的制作方法，其中，所述步骤S1中，所述阵列基板的所述多层无机绝缘层在切割区域被完全挖掉去除。
  10. 如权利要求8所述的全屏显示面板的制作方法，其中，所述步骤S2还包括在蒸镀形成OLED功能层之后，利用激光清除所述OLED功能层对应在所述切割外围区域的部分；
    所述步骤S4中利用激光从待切割面板上侧及下侧对待切割面板进行切割。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115050908A (zh) * 2022-06-09 2022-09-13 武汉华星光电半导体显示技术有限公司 显示面板及其制作方法
CN115241264A (zh) * 2022-08-10 2022-10-25 武汉华星光电半导体显示技术有限公司 显示面板

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109616506A (zh) * 2018-12-18 2019-04-12 武汉华星光电半导体显示技术有限公司 全屏显示面板及其制作方法
CN111508993B (zh) * 2019-01-31 2022-10-04 武汉华星光电半导体显示技术有限公司 一种oled显示面板及其制作方法
CN109904346B (zh) * 2019-02-28 2021-03-26 云谷（固安）科技有限公司 显示装置、显示面板及其制作方法
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CN110335961A (zh) * 2019-06-19 2019-10-15 武汉华星光电半导体显示技术有限公司 发光面板及显示装置
CN110265577B (zh) * 2019-06-27 2022-07-15 昆山工研院新型平板显示技术中心有限公司 显示面板以及显示装置
CN110265578B (zh) * 2019-06-27 2022-03-25 昆山工研院新型平板显示技术中心有限公司 显示面板以及显示装置
WO2021011000A1 (en) 2019-07-17 2021-01-21 Google Llc Metal plate design for electronic display panels
CN110265474B (zh) 2019-07-22 2022-05-13 京东方科技集团股份有限公司 Oled显示基板及其制备方法和显示装置
CN110364560A (zh) * 2019-07-22 2019-10-22 武汉华星光电半导体显示技术有限公司 Oled显示面板
CN110379837B (zh) * 2019-07-22 2022-04-15 京东方科技集团股份有限公司 显示面板、开孔方法及电子设备
CN110444683B (zh) * 2019-07-29 2022-03-25 云谷（固安）科技有限公司 一种显示面板和显示装置
CN110634397B (zh) 2019-08-19 2021-02-23 武汉华星光电半导体显示技术有限公司 显示面板及显示模组
US11974472B2 (en) * 2019-08-27 2024-04-30 Boe Technology Group Co., Ltd. Display substrate and manufacturing method thereof, and display device
EP4024468A4 (en) 2019-08-27 2022-09-21 BOE Technology Group Co., Ltd. DISPLAY SUBSTRATE, METHOD FOR MAKING IT AND DISPLAY DEVICE
CN112714959B (zh) 2019-08-27 2024-05-07 京东方科技集团股份有限公司 显示基板及其制作方法、显示装置
CN110767730A (zh) * 2019-10-31 2020-02-07 云谷（固安）科技有限公司 显示面板及其制备方法、显示装置
CN110943108B (zh) 2019-11-06 2021-01-15 武汉华星光电半导体显示技术有限公司 一种折叠显示面板及其制作方法、显示装置
CN111106266A (zh) * 2019-12-06 2020-05-05 武汉华星光电半导体显示技术有限公司 显示装置的制备方法和制备系统
CN111129347A (zh) * 2019-12-23 2020-05-08 武汉华星光电半导体显示技术有限公司 显示面板及其制作方法
CN111081748A (zh) * 2019-12-27 2020-04-28 武汉华星光电半导体显示技术有限公司 一种显示面板及显示装置
CN111162195B (zh) * 2020-01-02 2022-10-04 合肥维信诺科技有限公司 显示面板和显示装置
CN111261643B (zh) * 2020-02-10 2022-12-06 武汉华星光电半导体显示技术有限公司 柔性显示面板及制备方法
CN111326559B (zh) 2020-02-28 2023-09-29 武汉华星光电半导体显示技术有限公司 一种显示面板及显示装置
CN111415967B (zh) * 2020-04-24 2023-11-03 武汉华星光电半导体显示技术有限公司 显示面板及其制作方法
CN111627930B (zh) * 2020-05-27 2022-09-09 武汉华星光电半导体显示技术有限公司 阵列基板及其制备方法与显示面板
CN113745269B (zh) 2020-05-27 2024-10-18 京东方科技集团股份有限公司 显示基板及其制备方法、显示面板、显示装置
CN111725419B (zh) * 2020-06-02 2021-11-23 武汉华星光电半导体显示技术有限公司 柔性显示器及其制备方法
US11424270B2 (en) 2020-06-02 2022-08-23 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Flexible display device and manufacturing method thereof
CN111627971B (zh) * 2020-06-05 2023-02-07 京东方科技集团股份有限公司 一种显示面板及显示装置
CN111725425A (zh) * 2020-06-11 2020-09-29 武汉华星光电半导体显示技术有限公司 显示面板及其制作方法
CN112133727B (zh) * 2020-08-31 2025-09-12 京东方科技集团股份有限公司 显示基板及其制备方法和显示装置
CN112599568A (zh) * 2020-12-03 2021-04-02 福建华佳彩有限公司 一种激光切割的面板结构及其制备方法
CN112599700B (zh) * 2020-12-14 2022-05-24 合肥维信诺科技有限公司 显示基板、显示基板制备方法及显示装置
CN112786620B (zh) * 2021-01-08 2023-03-21 武汉华星光电半导体显示技术有限公司 显示面板和显示装置
CN112909207B (zh) * 2021-03-02 2022-08-09 云谷（固安）科技有限公司 显示面板及其制作方法
CN113036059B (zh) * 2021-03-09 2023-03-21 京东方科技集团股份有限公司 一种显示面板及其制作方法、显示装置
CN117321658B (zh) * 2021-06-22 2026-01-16 夏普显示科技株式会社 显示装置
KR102871640B1 (ko) * 2021-11-30 2025-10-15 엘지디스플레이 주식회사 표시장치
CN114551553A (zh) * 2022-02-25 2022-05-27 合肥京东方卓印科技有限公司 显示基板和显示装置
US20240407232A1 (en) * 2022-03-11 2024-12-05 Mianyang BOE Optoelectronics Technology Co.,Ltd. Display panel and method for manufacturing the same, and display device
CN117501830B (zh) * 2022-05-31 2025-10-17 京东方科技集团股份有限公司 一种显示面板、显示模组及显示装置
CN115835695B (zh) * 2022-11-29 2025-08-08 京东方科技集团股份有限公司 显示面板及显示装置
CN117479616A (zh) * 2023-07-04 2024-01-30 武汉华星光电半导体显示技术有限公司 显示面板

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105870147A (zh) * 2015-02-06 2016-08-17 三星显示有限公司 显示设备
CN106653818A (zh) * 2017-01-23 2017-05-10 上海天马有机发光显示技术有限公司 一种显示面板、显示装置及该显示面板的制备方法
CN107275363A (zh) * 2016-04-05 2017-10-20 三星显示有限公司 显示装置
CN107452894A (zh) * 2017-07-31 2017-12-08 京东方科技集团股份有限公司 一种有机电致发光显示面板、其制作方法及显示装置
US20180151834A1 (en) * 2016-11-28 2018-05-31 Japan Display Inc. Display device
CN108598287A (zh) * 2018-06-29 2018-09-28 上海天马微电子有限公司 柔性触控显示面板及其制作方法、柔性触控显示装置
CN109616506A (zh) * 2018-12-18 2019-04-12 武汉华星光电半导体显示技术有限公司 全屏显示面板及其制作方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102378360B1 (ko) * 2015-05-12 2022-03-25 삼성디스플레이 주식회사 유기 발광 표시 장치
KR102422279B1 (ko) * 2015-10-22 2022-07-19 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
KR102595919B1 (ko) * 2016-05-09 2023-10-31 삼성디스플레이 주식회사 디스플레이 장치
CN106992263B (zh) * 2017-04-01 2019-08-13 上海天马微电子有限公司 一种柔性显示面板

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105870147A (zh) * 2015-02-06 2016-08-17 三星显示有限公司 显示设备
CN107275363A (zh) * 2016-04-05 2017-10-20 三星显示有限公司 显示装置
US20180151834A1 (en) * 2016-11-28 2018-05-31 Japan Display Inc. Display device
CN106653818A (zh) * 2017-01-23 2017-05-10 上海天马有机发光显示技术有限公司 一种显示面板、显示装置及该显示面板的制备方法
CN107452894A (zh) * 2017-07-31 2017-12-08 京东方科技集团股份有限公司 一种有机电致发光显示面板、其制作方法及显示装置
CN108598287A (zh) * 2018-06-29 2018-09-28 上海天马微电子有限公司 柔性触控显示面板及其制作方法、柔性触控显示装置
CN109616506A (zh) * 2018-12-18 2019-04-12 武汉华星光电半导体显示技术有限公司 全屏显示面板及其制作方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115050908A (zh) * 2022-06-09 2022-09-13 武汉华星光电半导体显示技术有限公司 显示面板及其制作方法
CN115050908B (zh) * 2022-06-09 2023-12-01 武汉华星光电半导体显示技术有限公司 显示面板及其制作方法
CN115241264A (zh) * 2022-08-10 2022-10-25 武汉华星光电半导体显示技术有限公司 显示面板

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