WO2020124864A1 - 显示面板及其制备方法、显示装置 - Google Patents

显示面板及其制备方法、显示装置 Download PDF

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Publication number
WO2020124864A1
WO2020124864A1 PCT/CN2019/081090 CN2019081090W WO2020124864A1 WO 2020124864 A1 WO2020124864 A1 WO 2020124864A1 CN 2019081090 W CN2019081090 W CN 2019081090W WO 2020124864 A1 WO2020124864 A1 WO 2020124864A1
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Prior art keywords
layer
temperature resistant
resistant adhesive
base layer
high temperature
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English (en)
French (fr)
Inventor
夏晨
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US16/341,900 priority Critical patent/US10804342B1/en
Publication of WO2020124864A1 publication Critical patent/WO2020124864A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/361—Temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the invention relates to the field of display, in particular to a display panel, a preparation method thereof, and a display device.
  • Organic light-emitting diodes (Organic light-emitting diodes, OLED) display panels have the advantages of self-luminescence, high contrast, thin thickness, wide viewing angle and fast response speed. They are representative of the new generation of flat panel display technology and are more and more popular in the industry. Respect. The flexible OLED display panel is an important development trend.
  • the flexible OLED display panel not only can be thinner and lighter in volume, but also can reduce power consumption, thereby helping to improve the endurance of the corresponding products. At the same time, due to the flexibility and flexibility of the flexible OLED display panel, its durability is also higher than that of the ordinary rigid display panel. Flexible OLED display panels can be widely used in various products with display functions, such as tablet computers, TVs, mobile terminals, and various wearable devices.
  • OLED Organic Light-Emitting Diode
  • TFT Thin Film Transistor, thin film transistor
  • PI polyimide
  • O2 oxygen
  • H20 water
  • OLED Organic Light Emitting Diode
  • OLED organic light-emitting device
  • the flexible OLED display panel device includes a PI (polyimide) flexible layer, a TFT (thin film field effect transistor) driving layer, an OLED light emitting layer, a TFE (thin film encapsulation) encapsulation layer, etc. from bottom to top.
  • the principle of OLED luminescence is to deposit an OLED luminescent layer between two electrodes, and to apply current to the OLED luminescent layer, which causes light emission through carrier injection and recombination.
  • PI is usually used to replace the traditional glass substrate to achieve folding and flexible display; in order to achieve better bending and water-oxygen barrier performance, double-layer PI is usually used instead of single-layer PI, that is, PI-nitrogen Silicone-PI structure.
  • this double-layer PI structure is prone to fracture between the PI and the silicon nitride film layer when bending, which in turn causes water and oxygen to invade the OLED display panel, resulting in The OLED light-emitting layer fails to oxidize, reducing the product's tolerance.
  • the present invention provides a display panel, a manufacturing method thereof, and a display device, to solve the problem that the base layer and the barrier layer in the display panel are easily separated during the bending process in the prior art, thereby causing water and oxygen intrusion The problem of causing the light emitting layer of the display panel to fail.
  • the present invention provides a display panel including a first base layer; a barrier layer provided on the first base layer; a second base layer provided on the barrier layer; and a first high-temperature resistance An adhesive layer is used to bond the first base layer and the barrier layer; and a second high temperature resistant adhesive layer is used to bond the barrier layer and the second base layer.
  • the display panel further includes a thin film transistor structure layer, which is provided on the second base layer; an organic light emitting device, which is provided on the thin film transistor structure layer; and a thin film encapsulation layer, which is used to encapsulate the thin film transistor structure layer And the organic light emitting device.
  • the barrier layer is a single-layer silicon dioxide layer structure or a single-layer silicon nitride layer structure or a multi-layer structure in which a silicon dioxide layer and a silicon nitride layer are alternately arranged; the first base layer and the second
  • the material used for the base layer is polyimide.
  • the materials of the first high-temperature resistant adhesive layer and the second high-temperature resistant adhesive layer are both inorganic nanomaterials, including inorganic copper oxide, inorganic silicate, inorganic phosphate, and inorganic acid sodium salt. At least one.
  • the melting point of the first high temperature resistant adhesive layer and the second high temperature resistant adhesive layer is 500°C-1300°C.
  • the thickness of the barrier layer is 0.1 ⁇ m -1.0 ⁇ m; the thickness of the first base layer and the second base layer are both 5 ⁇ m -15 ⁇ m; the first high temperature resistant adhesive layer and the second high temperature resistant adhesive The thickness of the laminate is 0.1 ⁇ m -1.0 ⁇ m.
  • the present invention also provides a method for preparing a display panel, including the following steps: S1) providing a substrate; S2) forming a first base layer on the substrate; S3) coating or spraying a high temperature resistant adhesive onto the substrate Forming a first high temperature resistant adhesive layer on the first base layer; S4) forming a barrier layer on the first high temperature resistant adhesive layer; S5) applying or spraying a high temperature resistant adhesive onto the barrier layer Form a second high temperature resistant adhesive layer; S6) Form a second base layer on the second high temperature resistant adhesive layer.
  • step S6 the following steps are further included: S7) forming a thin film transistor structure layer on the second base layer; S8) correspondingly forming an organic light emitting device on the thin film transistor structure layer; S9) forming an encapsulation layer To encapsulate the thin film transistor structure layer and the organic light emitting device; S10) remove the substrate.
  • step S2) the polyimide material is sprayed onto the substrate, and the first base layer is formed after defoaming and curing; in step S6), the polyimide material is sprayed onto the barrier layer After defoaming and curing, a second base layer is formed.
  • the invention also provides a display device including the display panel.
  • the present invention proposes a display panel, a method of manufacturing the same, and a display device.
  • an inorganic high-temperature resistant adhesive layer between the first base layer and the barrier layer and between the second base layer and the barrier layer, the base layer and the barrier layer. The bonding of the layers is stronger, the bending performance of the base layer is improved, the fracture risk of the base layer and the barrier layer is reduced, and the bending ability of the flexible display panel is improved, thereby improving the product yield and tolerance.
  • FIG. 1 is a schematic diagram of forming a first base layer in a method of manufacturing a display panel in an embodiment.
  • FIG. 2 is a schematic diagram of forming a first high-temperature-resistant adhesive layer in the method for manufacturing a display panel in an embodiment.
  • FIG. 3 is a schematic diagram of forming a barrier layer in the method for manufacturing a display panel in the embodiment of FIG. 3.
  • FIG. 4 is a schematic diagram of forming a second high-temperature-resistant adhesive layer in the method for manufacturing a display panel in the embodiment of FIG. 4.
  • FIG. 5 is a schematic diagram of forming a second base layer in the method for manufacturing a display panel in the embodiment of FIG. 5.
  • FIG. 6 is a schematic diagram of a display panel and a display device in an embodiment.
  • FIG. 7 is a schematic flow chart of a method for manufacturing a display panel in an embodiment.
  • thin-film transistor structure layer 160 organic light-emitting device; 170 thin film encapsulation layer; 111 substrate;
  • the display panel 10 of the present invention includes a first base layer 110, a barrier layer 120, a second base layer 130, a high temperature resistant adhesive layer 140, a thin film transistor structure layer 150, and an organic light emitting device 160 ⁇ Thick film encapsulation layer 170.
  • the material used for the first base layer 110 and the second organic layer 130 is polyimide
  • the barrier layer 120 is disposed between the first base layer 110 and the second base layer 130
  • the barrier layer 120 It can be made of silicon dioxide (SiO2) material or silicon nitride (SiNx) material
  • the thickness of the first base layer 110 and the second base layer 130 are both 5 ⁇ m to 15 ⁇ m
  • the thickness of 120 is between 0.1 ⁇ m and 2.0 ⁇ m, specifically, it may be 0.2 ⁇ m, 0.5 ⁇ m, 1.1 ⁇ m, or 1.9 ⁇ m.
  • the barrier layer may be a single-layer silicon dioxide layer, or a single-layer silicon nitride layer, and of course, a multi-layer structure in which the silicon dioxide layer and the silicon nitride layer are alternately arranged.
  • the arrangement of the silicon dioxide layer and the silicon nitride layer can be written as ABABAB-..., ie (AB)n, where n is an integer greater than or equal to 1, A represents a silicon dioxide layer, and B represents a silicon nitride layer.
  • the barrier layer 120 of the multi-layer structure can extend the penetration path of water and oxygen, and has a better ability to block water vapor and oxygen.
  • a composite substrate structure composed of the first base layer 110, the barrier layer 120, and the second base layer 130 is more flexible than a flexible substrate made of a single polyimide flexible substrate or other organic polymer materials.
  • the composite substrate structure composed of the first base layer 110, the barrier layer 120, and the second base layer 130 has good water and oxygen barrier properties, greatly reducing the probability of water and oxygen penetrating through the flexible substrate, and protecting the thin film transistor
  • the structure layer and the organic light-emitting device structure improve the service life of the OLED display panel; on the other hand, the composite flexible substrate structure also has good flexibility, and can be widely used in preparing flexible panels.
  • the high temperature resistant adhesive layer 140 includes a first high temperature resistant adhesive layer 1410 and a second high temperature resistant adhesive layer 1420, the first high temperature resistant adhesive The layer 1410 is used to bond the first base layer 110 and the barrier layer 120, and the second high temperature resistant adhesive layer 1420 is used to bond the barrier layer 120 and the second base layer 130, the high temperature resistance
  • the adhesive layer 140 has strong adhesion, and its thickness is between 0.1 ⁇ m and 1.0 ⁇ m, specifically, it can be 0.3 ⁇ m, 0.5 ⁇ m, 0.7 ⁇ m, or 0.9 ⁇ m, and can be 0.3 ⁇ m, 0.5 ⁇ m, 0.7 ⁇ m, or 0.9 ⁇ m, and can
  • the thin film transistor structure layer 150 is provided on the second base layer 130, the organic light emitting device 160 is provided on the thin film transistor structure layer 150, and the thin film encapsulation layer 170 is opposite to the organic light emitting device 160 and the The thin film transistor structure layer 150 is packaged.
  • the manufacturing method of the display panel of the present invention includes steps S1) to S10).
  • a substrate 111 is provided.
  • the substrate 111 is a glass substrate.
  • a polyimide material is sprayed onto the substrate 111, and the first base layer 110 is formed after defoaming and curing.
  • a high temperature resistant adhesive is applied or sprayed onto the first base layer 110 to form a first high temperature resistant adhesive layer 1410.
  • a barrier layer 120 is formed on the first high temperature resistant adhesive layer 1410; in this embodiment, a polyimide material is sprayed onto the barrier layer 120, which is formed after defoaming and curing Second base layer 130.
  • a high temperature resistant adhesive is applied or sprayed onto the barrier layer 120 to form a second high temperature resistant adhesive layer 1420.
  • a second base layer 130 is formed on the second high temperature resistant adhesive layer 1420.
  • the organic light emitting device 160 is correspondingly formed on the thin film transistor structure layer 150.
  • a thin film encapsulation layer 170 is formed to encapsulate the thin film transistor structure layer 150 and the organic light emitting device 160.
  • the present invention also provides a display device 1 whose main improvements and features are concentrated on the display panel 10, and other components of the display device will not be described in detail.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

本发明公开了一种显示面板及其制备方法、显示装置，显示面板包括第一基层；阻隔层，设于所述第一基层上；第二基层，设于所述阻隔层上；第一耐高温粘合层，用以粘结所述第一基层和所述阻隔层；以及第二耐高温粘合层，用以粘结所述阻隔层和所述第二基层。本发明的有益效果在于提出了一种显示面板及制备方法、显示装置，利用在在基层与阻隔层之间涂布一层无机耐高温粘合层，使得基层与阻隔层的粘结得更牢固，提高基层的弯折性能，降低基层和阻隔层断裂风险，提高柔性显示面板的弯折能力，从而提高产品良率和可耐受性。

Description

显示面板及其制备方法、显示装置 技术领域
本发明涉及显示领域，特别涉及显示面板及其制备方法、显示装置。
 背景技术
有机电致发光二极管(Organic light-emitting diodes，OLED)显示面板具备自发光、对比度高、厚度薄、视角广和反应速度快等优点，是新一代平面显示技术的代表，越来越受到业界的推崇。而柔性OLED显示面板是其中的一个重要发展趋势。
柔性OLED显示面板不仅能够在体积上更加轻薄，而且能够降低功耗，从而有助于提升相应产品的续航能力。同时，由于柔性OLED显示面板的可弯曲性和柔韧性，其耐用程度也高于普通硬质显示面板。柔性OLED显示面板可广泛应用于各种带显示功能的产品中，例如可以应用于平板电脑、电视、移动终端和各类可穿戴式设备中。
随着显示技术的发展，对色彩和轻便度要求越来越高，柔性OLED(Organic Light-Emitting Diode，有机发光器件)显示器正在逐渐走进移动设备、电视机等消费电子市场。作为柔性显示器，其以一层由聚酰亚胺(PI)为主要成分制备的基层为TFT(Thin Film Transistor，薄膜晶体管)结构和OLED结构的柔性基板。然而基层阻隔氧气(O2)和水(H20)的能力差，会导致有一部分水或氧气透过基层渗透进TFT结构的电路中，并影响OLED发光材料使用寿命。
近年来，OLED（Organic Light Emitting Diode，有机发光器件）显示技术发展突飞猛进，OLED产品由于具有轻薄、响应快、广视角、高对比度、柔性等优点，受到了越来越多的关注和应用，主要应用在手机、平板、电视等显示领域。
柔性OLED显示面板装置由下到上包括PI（聚酰亚胺）柔性层、TFT（薄膜场效应晶体管）驱动层、OLED发光层、TFE（薄膜封装）封装层等。OLED的发光原理是在两个电极之间沉积OLED发光层，对OLED发光层通以电流，通过载流子注入和复合而导致发光。在柔性OLED显示技术中，通常采用PI取代传统的玻璃基底，以实现折叠和柔性显示；为了实现更好的弯折及水氧阻隔性能，通常采用双层PI代替单层PI，即PI-氮化硅-PI结构。然而由于有机PI和无机氮化硅之间粘附性能较差，此双层PI结构在bending弯折时候PI与氮化硅膜层之间易发生断裂，进而造成水氧入侵OLED显示面板，导致OLED发光层氧化失效，降低产品可耐受性。
 技术问题
为了解决上述技术问题：本发明提供了一种显示面板及其制备方法、显示装置，以解决现有技术中在弯折过程中，显示面板中的基层与阻隔层容易分离，从而造成水氧入侵致使显示面板发光层失效的问题。
 技术解决方案
解决上述问题的技术方案是，本发明提供了一种显示面板，包括第一基层；阻隔层，设于所述第一基层上；第二基层，设于所述阻隔层上；第一耐高温粘合层，用以粘结所述第一基层和所述阻隔层；以及第二耐高温粘合层，用以粘结所述阻隔层和所述第二基层。
进一步地，所述显示面板还包括薄膜晶体管结构层，设于所述第二基层上；有机发光器件，设于所述薄膜晶体管结构层上；薄膜封装层，用以封装所述薄膜晶体管结构层和所述有机发光器件。
进一步地，所述阻隔层为单层二氧化硅层结构或单层氮化硅层结构或二氧化硅层和氮化硅层的相互交替设置的多层结构；所述第一基层和第二基层所用材料均为聚酰亚胺。
进一步地，所述第一耐高温粘合层和所述第二耐高温粘合层的材质均为无机纳米材料，包括无机氧化铜、无机硅酸盐、无机磷酸盐、无机酸纳盐中的至少一种。
进一步地，所述第一耐高温粘合层和所述第二耐高温粘合层的熔点为500℃-1300℃。
进一步地，所述阻隔层的厚度为0.1μm -1.0μm；所述第一基层和所述第二基层的厚度均为5μm -15μm；所述第一耐高温粘合层和第二耐高温粘合层的厚度均为0.1μm -1.0μm。
本发明还提供了一种显示面板的制备方法，包括以下步骤：S1） 提供一基板； S2）形成第一基层于所述基板上；S3）将耐高温粘合剂涂布或喷淋到所述第一基层上，形成第一耐高温粘合层；S4）形成阻隔层于所述第一耐高温粘合层上；S5）将耐高温粘合剂涂布或喷淋到所述阻隔层上，形成第二耐高温粘合层；S6）形成第二基层于所述第二耐高温粘合层上。
进一步地，在步骤S6）之后还包括以下步骤：S7）形成薄膜晶体管结构层于所述第二基层上；S8）对应地形成有机发光器件于所述薄膜晶体管结构层上；S9）形成封装层用以封装所述薄膜晶体管结构层和所述有机发光器件；S10）去除所述基板。
进一步地，在步骤S2）中，将聚酰亚胺材料喷涂到所述基板上，脱泡固化后形成第一基层；在步骤S6）中，将聚酰亚胺材料喷涂到所述阻隔层上，脱泡固化后形成第二基层。
本发明还提供了一种显示装置，包括所述显示面板。
 有益效果
本发明提出了一种显示面板及其制备方法、显示装置，利用在第一基层与阻隔层之间、第二基层与阻隔层之间涂布一层无机耐高温粘合层，使得基层与阻隔层的粘结得更牢固，提高基层的弯折性能，降低基层和阻隔层断裂风险，提高柔性显示面板的弯折能力，从而提高产品良率和可耐受性。
 附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是实施例中的显示面板制备方法中形成第一基层的示意图。
图2是实施例中的显示面板制备方法中形成第一耐高温粘合层的示意图。
图3实施例中的显示面板制备方法中形成阻隔层的示意图。
图4实施例中的显示面板制备方法中形成第二耐高温粘合层的示意图。
图5实施例中的显示面板制备方法中形成第二基层的示意图。
图6是实施例中的显示面板、显示装置示意图。
图7是实施例中显示面板制备方法流程示意图。
附图中部件标记为：
1 显示装置；
10 显示面板；
110 第一基层；                        120 阻隔层；
130 第二基层；                        140 耐高温粘合层；
1410 第一耐高温粘合层；                1420 第二耐高温粘合层；
150 薄膜晶体管结构层；         160 有机发光器件；                    170 薄膜封装层；                       111基板；
 本发明的实施方式
以下实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「顶」、「底」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。
实施例
如图6所示，本实施例中，本发明的示面板10，包括第一基层110、阻隔层120、第二基层130、耐高温粘合层140、薄膜晶体管结构层150、有机发光器件160和薄膜封装层170。
所述第一基层110和所述第二机层130所用材料为聚酰亚胺，所述阻隔层120设于所述第一基层110和所述第二基层130之间，所述阻隔层120可以由二氧化硅（SiO2)材料制备，也可以由氮化硅(SiNx)材料制备；所述第一基层110和所述第二基层130的厚度均为5μm 至15μm之间；所述阻隔层120的厚度为0.1μm 至2.0μm之间，具体地，可以为0.2μm、0.5μm、1.1μm或1.9μm。
在本实施例中，所述阻隔层可以是单层二氧化硅层，也可以是单层氮化硅层，当然也可以是二氧化硅层和氮化硅层相互交替设置的多层结构。
在所述阻隔层120的多层结构中，二氧化硅层和氮化硅层的排布形式可写为A-B-A-B-A-B-……，即(AB)n，其中，n为大于或等于1的整数，A代表二氧化硅层，B代表氮化硅层。多层结构的阻隔层120可以延长水和氧气的渗透路径，具有更加优秀的阻隔水蒸气和氧气的能力。
本发明具体实施方式中，由所述第一基层110、阻隔层120和第二基层130组成的复合基底结构，相比于单独的聚酰亚胺柔性基底或其他有机聚合材料制备的柔性基底具有如下特点：一方面，由第一基层110、阻隔层120和第二基层130组成的复合基底结构具有良好的水氧阻隔性能，很大程度上降低水氧透过柔性基底的概率，保护薄膜晶体管结构层及有机发光器件结构，提高OLED显示面板的使用寿命；另一方面，所述复合柔性基底结构也具有良好的柔韧性，可广泛应用于制备柔性面板。
然而，由于所述第一基层110和所述阻隔层120之间、所述阻隔层120和所述第二基层130之间粘附性较差，在弯折时容易发生断裂，进而造成水氧入侵，导致所述显示面板10发光层氧化失败，在本实施例中，在所述第一基层110和所述阻隔层120之间、所述阻隔层120和所述第二基层130之间均加设了一层耐高温粘合层140，具体地，所述耐高温粘合层140包括第一耐高温粘合层1410和第二耐高温粘合层1420，所述第一耐高温粘合层1410用以粘结所述第一基层110和所述阻隔层120，所述第二耐高温粘合层1420用以粘结所述阻隔层120和所述第二基层130，所述耐高温粘合层140具有较强的粘结性，其厚度为0.1μm 至1.0μm之间，具体的，可以为0.3μm、0.5μm、0.7μm或0.9μm，可以耐受500℃-1300℃以上的高温，即耐高温粘合层140的熔点至少在500℃-1300℃，所述高温粘合层140能够在高温下保持优越的粘接功能和抗侵蚀性，其材料为无机纳米复合粘结剂，具体为无机氧化铜材料、无机硅酸盐材料、无机磷酸盐材料、无机硫酸盐材料等中的至少一种。
所述薄膜晶体管结构层150设于所述第二基层130上，所述有机发光器件160设于所述薄膜晶体管结构层150上，所述薄膜封装层170对所述有机发光器件160和所述薄膜晶体管结构层150进行封装。
为了更加清楚的解释本发明的显示面板，下面结合显示面板的制备方法对本发明作进一步说明。
如图7所示，本发明的显示面板的制备方法，包括步骤S1）至 步骤S10）。
S1） 提供一基板111，本实施例中，所述基板111选择玻璃基板。
S2）形成第一基层110于所述基板111上；如图1所示，本实施例中，将聚酰亚胺材料喷涂到所述基板111上，脱泡固化后形成第一基层110。
S3）如图2所示，将耐高温粘合剂涂布或喷淋到所述第一基层110上，形成第一耐高温粘合层1410。
S4）如图3所示，形成阻隔层120于所述第一耐高温粘合层1410上；本实施例中，将聚酰亚胺材料喷涂到所述阻隔层120上，脱泡固化后形成第二基层130。
S5）如图4所示，将耐高温粘合剂涂布或喷淋到所述阻隔层120上，形成第二耐高温粘合层1420。
S6）如图5所示，形成第二基层130于所述第二耐高温粘合层1420上。
S7）形成薄膜晶体管结构层150于所述第二基层130上。
S8）对应地形成有机发光器件160于所述薄膜晶体管结构层150上。
S9）形成薄膜封装层170用以封装所述薄膜晶体管结构层150和所述有机发光器件160。
S10）去除所述基板111。
本发明还提供了一种显示装置1，其主要改进点和特征均集中体现在所述显示面板10上，对于显示装置的其他部件，就不再一一赘述。
以上仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。

Claims (15)

  1. 一种显示面板，其中，包括
    第一基层；
    阻隔层，设于所述第一基层上；
    第二基层，设于所述阻隔层上；
    第一耐高温粘合层，用以粘结所述第一基层和所述阻隔层；以及
    第二耐高温粘合层，用以粘结所述阻隔层和所述第二基层。
  2. 根据权利要求1所述的显示面板，其中，还包括
    薄膜晶体管结构层，设于所述第二基层上；
    有机发光器件，设于所述薄膜晶体管结构层上；
    薄膜封装层，用以封装所述薄膜晶体管结构层和所述有机发光器件。
  3. 根据权利要求1所述的显示面板，其中，
    所述阻隔层为单层二氧化硅层结构或单层氮化硅层结构或二氧化硅层和氮化硅层的相互交替设置的多层结构；
    所述第一基层和第二基层所用材料均为聚酰亚胺。
  4. 根据权利要求1所述的显示面板，其中，
    所述第一耐高温粘合层和所述第二耐高温粘合层的材质均为无机纳米材料，包括无机氧化铜、无机硅酸盐、无机磷酸盐、无机酸纳盐中的至少一种。
  5. 根据权利要求1所述的显示面板，其中，所述第一耐高温粘合层和所述第二耐高温粘合层的熔点为500℃-1300℃。
  6. 根据权利要求1所述的显示面板，其中，
    所述阻隔层的厚度为0.1μm -1.0μm；
    所述第一基层和所述第二基层的厚度均为5μm -15μm；
    所述第一耐高温粘合层和第二耐高温粘合层的厚度均为0.1μm -1.0μm。
  7. 一种显示面板的制备方法，其中，包括以下步骤：
    S1） 提供一基板；
    S2）形成第一基层于所述基板上；
    S3）将耐高温粘合剂涂布或喷淋到所述第一基层上，形成第一耐高温粘合层；
    S4）形成阻隔层于所述第一耐高温粘合层上；
    S5）将耐高温粘合剂涂布或喷淋到所述阻隔层上，形成第二耐高温粘合层；
    S6）形成第二基层于所述第二耐高温粘合层上。
  8. 根据权利要求7所述的显示面板的制备方法，其中，在步骤S6）之后还包括以下步骤：
    S7）形成薄膜晶体管结构层于所述第二基层上；
    S8）对应地形成有机发光器件于所述薄膜晶体管结构层上；
    S9）形成薄膜封装层用以封装所述薄膜晶体管结构层和所述有机发光器件；
    S10）去除所述基板。
  9. 根据权利要求7所述的显示面板的制备方法，其中，
    在步骤S2）中，将聚酰亚胺材料喷涂到所述基板上，脱泡固化后形成第一基层；
    在步骤S6）中，将聚酰亚胺材料喷涂到所述阻隔层上，脱泡固化后形成第二基层。
  10. 一种显示装置，其中，包括权利要求1所述的显示面板。
  11. 根据权利要求10所述的显示装置，其中，还包括
    薄膜晶体管结构层，设于所述第二基层上；
    有机发光器件，设于所述薄膜晶体管结构层上；
    薄膜封装层，用以封装所述薄膜晶体管结构层和所述有机发光器件。
  12. 根据权利要求10所述的显示装置，其中，
    所述阻隔层为单层二氧化硅层结构或单层氮化硅层结构或二氧化硅层和氮化硅层的相互交替设置的多层结构；
    所述第一基层和第二基层所用材料均为聚酰亚胺。
  13. 根据权利要求10所述的显示装置，其中，
    所述第一耐高温粘合层和所述第二耐高温粘合层的材质均为无机纳米材料，包括无机氧化铜、无机硅酸盐、无机磷酸盐、无机酸纳盐中的至少一种。
  14. 根据权利要求10所述的显示装置，其中，
    所述第一耐高温粘合层和所述第二耐高温粘合层的熔点为500℃-1300℃。
  15. 根据权利要求10所述的显示装置，其中，
    所述阻隔层的厚度为0.1μm -1.0μm；
    所述第一基层和所述第二基层的厚度均为5μm -15μm；
    所述第一耐高温粘合层和第二耐高温粘合层的厚度均为0.1μm -1.0μm。
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