CN107017173A - 半导体封装体的制造方法 - Google Patents
半导体封装体的制造方法 Download PDFInfo
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- CN107017173A CN107017173A CN201610997829.2A CN201610997829A CN107017173A CN 107017173 A CN107017173 A CN 107017173A CN 201610997829 A CN201610997829 A CN 201610997829A CN 107017173 A CN107017173 A CN 107017173A
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- protective film
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Abstract
[课题]提供能够防止由树脂的热固化收缩导致的半导体芯片位置偏移的半导体封装体的制造方法。[解决手段]涉及一种半导体封装体的制造方法,其包括如下工序:在配置在粘合片上的半导体背面保护薄膜上配置半导体芯片的工序;使半导体背面保护薄膜固化的工序;以及,用树脂密封半导体芯片的工序。
Description
技术领域
本发明涉及半导体封装体的制造方法。
背景技术
承担抑制半导体晶圆翘曲的作用、保护半导体背面的作用的半导体背面保护薄膜是已知的。
现有技术文献
专利文献
专利文献1:日本特开2012-33636号公报
发明内容
发明要解决的问题
在配置在玻璃板等硬质支撑体上的双面粘合片上配置数个半导体元件,并用密封树脂密封数个半导体元件的方法(晶圆级封装体的制造方法)中,半导体芯片有时因密封树脂的热固化收缩而发生偏移。半导体芯片发生位置偏移时,有时无法进行重新布线。
本发明的目的在于,提供能够防止由树脂的热固化收缩导致的半导体芯片位置偏移的半导体封装体的制造方法。
用于解决问题的方案
为了解决上述问题,本发明具备如下技术方案。即,本发明涉及一种半导体封装体的制造方法,其包括如下工序:在配置在粘合片上的半导体背面保护薄膜上配置半导体芯片的工序(A);在工序(A)之后,使半导体背面保护薄膜固化的工序(B);以及,在工序(B)之后,用树脂密封半导体芯片的工序(C)。本发明所述的半导体封装体的制造方法能够防止由树脂的热固化收缩导致的半导体芯片位置偏移。这是因为,通过半导体背面保护薄膜的固化来提高半导体芯片与半导体背面保护薄膜的密合力后,再用树脂密封半导体芯片。本发明所述的半导体封装体的制造方法中,进行切割时,在切割后能够利用半导体背面保护薄膜来保护半导体芯片。
附图说明
图1A是实施方式1所述的方法中的半导体芯片搭载工序后的示意剖面图。
图1B是实施方式1所述的方法中的密封工序后的示意剖面图。
图2是层叠体的示意剖面图。
图3是固定支撑体后的示意剖面图。
图4是搭载半导体芯片后的示意剖面图。
图5是搭载密封片后的示意剖面图。
图6是压制工序后的示意剖面图。
图7是切割前半导体封装体的示意剖面图。
图8是切割后的示意剖面图。
图9是变形例1中的层叠体的示意剖面图。
图10是变形例2中的层叠体的示意剖面图。
附图标记说明
1 层叠体
11 半导体背面保护薄膜
12 粘合片
121 第1粘合剂层
122 第2粘合剂层
123 基材层
21 支撑体
31 半导体芯片
3 组合
4 密封片
41 树脂层
42 剥离衬垫
5 联合体
71 包含布线的层
72 凸块
6 切割前半导体封装体
7 半导体封装体
111 切割后半导体背面保护薄膜
711 切割后的层
411 树脂部
具体实施方式
以下示出实施方式,详细说明本发明,但本发明不限定于这些实施方式。
[实施方式1]
如图1A所示那样,实施方式1所述的半导体封装体的制造方法包括如下工序:在配置在粘合片12上的半导体背面保护薄膜11上配置半导体芯片31的工序;使半导体背面保护薄膜11固化的工序;以及如图1B所示那样,用树脂41密封半导体芯片31的工序。用树脂41密封半导体芯片31的工序包括使树脂41固化的步骤。实施方式1所述的方法中,能够防止由树脂41的热固化收缩导致的半导体芯片31位置偏移。这是因为,通过半导体背面保护薄膜11的固化来提高半导体芯片31与半导体背面保护薄膜11的密合力后,用树脂41密封半导体芯片31。
如图2所示那样,首先准备层叠体1。层叠体1包含粘合片12和配置在粘合片12上的半导体背面保护薄膜11。粘合片12包含第1粘合剂层121、第2粘合剂层122、以及位于第1粘合剂层121与第2粘合剂层122之间的基材层123。粘合片12的两面可以定义为第1主面以及与第1主面相对的第2主面。粘合片12的第1主面是与半导体背面保护薄膜11接触的面。第1粘合剂层121位于半导体背面保护薄膜11与基材层123之间。第1粘合剂层121与半导体背面保护薄膜11接触。第1粘合剂层121与基材层123接触。第1粘合剂层121具有剥离力因加热而降低的性质。具体而言,是因加热而发泡的性质。发泡后,能够容易地将半导体背面保护薄膜11从粘合片12上剥离。另一方面,第2粘合剂层122不具有因加热而发泡的性质。
如图3所示那样,在层叠体1的第2粘合剂层122上固定硬质的支撑体21。由于在层叠体1上固定硬质的支撑体21,因此能够进行稳定的切割。支撑体21呈现板状。优选为平滑且平坦的支撑体。支撑体21例如为金属板、陶瓷板、玻璃板等。支撑体21优选具有激光透射性。这是因为,能够越过支撑体21对半导体背面保护薄膜11照射激光。支撑体21的厚度例如为0.1mm~50mm。
如图4所示那样,在层叠体1的半导体背面保护薄膜11上配置半导体芯片31a、31b、31c、31d(以下有时统称为“半导体芯片31”)。半导体芯片31的两面可以定义为第1面以及与第1面相对的第2面。此处,半导体芯片31的第2面与半导体背面保护薄膜11接触。有时将半导体芯片31的第2面称为背面。通过在半导体背面保护薄膜11上配置半导体芯片31a、31b、31c、31d而形成的组合3包含支撑体21和粘合片12和半导体背面保护薄膜11和半导体芯片31a、31b、31c、31d。
使与半导体芯片31a、31b、31c、31d接触的状态下的半导体背面保护薄膜11固化。具体而言,通过加热组合3而使半导体背面保护薄膜11固化。温度例如为50℃~300℃。优选为80℃以上、更优选为100℃以上。优选为200℃以下、更优选为150℃以下、进一步优选为140℃以下。加热时间例如为1分钟~300分钟。
如图5所示那样,在位于固化后的半导体背面保护薄膜11上的半导体芯片31a、31b、31c、31d上配置包含树脂层41的密封片4。密封片4包含树脂层41和配置在树脂层41上的剥离衬垫42。通过在半导体芯片31a、31b、31c、31d上配置密封片4而形成的联合体5包含支撑体21和粘合片12和固化后的半导体背面保护薄膜11和半导体芯片31a、31b、31c、31d和密封片4。
如图6所示那样,将半导体芯片31a、31b、31c、31d埋入至树脂层41。具体而言,通过一边用实质平行的一对平板对联合体5施加力一边加热联合体5,从而将半导体芯片31a、31b、31c、31d埋入至树脂层41中。温度例如为50℃~200℃。优选为70℃以上。优选为120℃以下、更优选为110℃以下。
接着,通过加热树脂层41而使树脂层41固化。具体而言,通过对压制后的联合体5进行加热而使树脂层41固化。温度例如为50℃~300℃。优选为80℃以上、更优选为120℃以上、进一步优选为140℃以上。优选为200℃以下、更优选为170℃以下、进一步优选为160℃以下。加热时间例如为1分钟~300分钟。
如图7所示那样,按照根据需要剥掉剥离衬垫42、对固化后的树脂层41进行研削、形成包含布线的层71、形成凸块72这一顺序来形成切割前半导体封装体6。切割前半导体封装体6包含固化后的半导体背面保护薄膜11、层71、半导体芯片31a、31b、31c、31d、以及研削后的树脂层41。半导体芯片31a、31b、31c、31d位于固化后的半导体背面保护薄膜11与层71之间。研削后的树脂层41位于固化后的半导体背面保护薄膜11与层71之间。即,在固化后的半导体背面保护薄膜11与层71之间的区域中,半导体芯片31a、31b、31c、31d占据的芯片区域的其余部分被研削后的树脂层41占据。切割前半导体封装体6还包括固定于布线的凸块72。切割前半导体封装体6被固定于粘合片12。
如图8所示那样,通过对切割前半导体封装体6进行切割而形成半导体封装体7a、7b、7c、7d(以下有时也统称为“半导体封装体7”)。各半导体封装体7包含切割后半导体背面保护薄膜111、切割后层711、半导体芯片31和树脂部411。半导体芯片31位于切割后半导体背面保护薄膜111与切割后层711之间。树脂部411位于切割后半导体背面保护薄膜111与切割后层711之间。即,在切割后半导体背面保护薄膜111与切割后层711之间的区域中,半导体芯片31占据的芯片区域的其余部分被树脂部411占据。半导体封装体7还包括固定于布线的凸块72。半导体封装体7被固定于粘合片12。
使半导体封装体7与粘合片12之间的剥离力降低。具体而言,通过用冲着支撑体21的加热器加热粘合片12而使剥离力降低。即,通过加热而使第1粘合剂层121膨胀。此处,优选以比第1粘合剂层121中的热膨胀性微球的膨胀起始温度高50℃以上的温度进行加热。例如为80℃~250℃。优选为100℃以上、更优选为130℃以上、进一步优选为150℃以上、进一步优选为160℃以上。优选为220℃以下、更优选为200℃以下、进一步优选为190℃以下。
用减压吸附筒夹将半导体封装体7从粘合片12上剥离。即,拾取半导体封装体7。
在切割半导体封装体7后,可以用激光对半导体背面保护薄膜111进行印刷。应予说明,用激光印刷时,可以利用公知的激光标记装置。此外,作为激光,可以利用气体激光、固体激光、液体激光等。具体而言,作为气体激光,没有特别限定,可以利用公知的气体激光,适合为二氧化碳激光(CO2激光)、准分子激光(ArF激光、KrF激光、XeCl激光、XeF激光等)。此外,作为固体激光,没有特别限定,可以利用公知的固体激光,适合为YAG激光(Nd:YAG激光等)、YVO4激光。
(层叠体1)
半导体背面保护薄膜11与粘合片12的剥离力(23℃、剥离角度为180度、剥离速度为300mm/分钟)优选为0.05N/20mm~5N/20mm。为0.05N/20mm以上时,在切割时固化后的半导体背面保护薄膜11难以从粘合片12上剥离。
(第1粘合剂层121)
第1粘合剂层121具有剥离力因加热而降低的性质。例如,是因加热而发泡的性质。发泡后,能够容易地将半导体背面保护薄膜11从粘合片12上剥离。
第1粘合剂层121可以由以常温~150℃的温度区域内的动态弹性模量为5万~1000万dyn/cm2的聚合物作为基础聚合物的粘合剂形成。例如为以将1种或2种以上(甲基)丙烯酸烷基酯用作单体成分的丙烯酸类聚合物作为基础聚合物的丙烯酸类粘合剂。
第1粘合剂层121包含热膨胀性微球。热膨胀性微球具有因加热而膨胀的性质。热膨胀性微球膨胀后,能够容易地将半导体背面保护薄膜11从粘合片12上剥离。这是因为第1粘合剂层121会发生变形。热膨胀性微球可以由因加热而变成气体的物质和内含因加热而变成气体的物质的微囊构成。因加热而变成气体的物质例如为异丁烷、丙烷、戊烷等。微囊可以由高分子构成。例如为偏二氯乙烯-丙烯腈共聚物、聚乙烯醇、聚乙烯醇缩丁醛、聚甲基丙烯酸甲酯、聚丙烯腈、聚偏二氯乙烯、聚砜等。其中,优选为热塑性高分子。热膨胀性微球的市售品为松本油脂制药株式会社制造的Microsphere等。
热膨胀性微球的加热膨胀起始温度优选为130℃以上。为130℃以上时,直至拾取工序为止第1粘合剂层121难以因受热而产生膨胀。热膨胀性微球的体积膨胀率优选为5倍以上、更优选为7倍以上、进一步优选为10倍以上。热膨胀性微球的平均粒径优选为100μm以下、更优选为80μm以下、进一步优选为50μm以下。热膨胀性微球的平均粒径的下限例如为1μm。相对于基础聚合物100重量份,热膨胀性微球的含量优选为1重量份以上、更优选为10重量份以上、进一步优选为25重量份以上。相对于基础聚合物100重量份,热膨胀性微球的含量优选为150重量份以下、更优选为130重量份以下、进一步优选为100重量份以下。
第1粘合剂层121的厚度优选为2μm以上、更优选为5μm以上。第1粘合剂层121的厚度优选为300μm以下、更优选为200μm以下、进一步优选为150μm以下。
(第2粘合剂层122)
第2粘合剂层122由丙烯酸类粘合剂等粘合剂形成。第2粘合剂层122不具有因加热而膨胀的性质。第2粘合剂层122的厚度优选为2μm以上、更优选为5μm以上。第2粘合剂层122的厚度优选为300μm以下、更优选为200μm以下、进一步优选为150μm以下。
(基材层123)
基材层123优选具有会透射激光的性质(以下称为“激光透射性”)。能够越过基材层123将激光照射至半导体背面保护薄膜11。基材层123的厚度优选为1μm以上、更优选为10μm以上、进一步优选为20μm以上、进一步优选为30μm以上。基材层123的厚度优选为1000μm以下、更优选为500μm以下、进一步优选为300μm以下、进一步优选为200μm以下。
(半导体背面保护薄膜11)
半导体背面保护薄膜11是有色的。为有色时,有时能够简单地区分粘合片12和半导体背面保护薄膜11。半导体背面保护薄膜11例如优选为黑色、蓝色、红色等深色。特别优选为黑色。这是因为容易视觉识别激光标记。
深色是指基本上用L*a*b*色度体系规定的L*达到60以下(0~60)[优选为50以下(0~50)、进一步优选为40以下(0~40)]的深颜色。
此外,黑色是指基本上用L*a*b*色度体系规定的L*达到35以下(0~35)[优选为30以下(0~30)、进一步优选为25以下(0~25)]的黑色系颜色。应予说明,黑色中,用L*a*b*色度体系规定的a*、b*可以分别根据L*值来适当选择。作为a*、b*,例如两者均优选为-10~10、更优选为-5~5,特别适合为-3~3的范围(尤其是0或几乎为0)。
应予说明,用L*a*b*色度体系规定的L*、a*、b*可以通过使用色彩色差计(商品名“CR-200”Minolta公司制;色彩色差计)进行测定来求出。应予说明,L*a*b*色度体系是指国际照明委员会(CIE)于1976年推荐的颜色空间,是指被称为CIE1976(L*a*b*)色度体系的颜色空间。此外,L*a*b*色度体系在日本工业标准中被规定至JIS Z 8729中。
在85℃和85%RH的气氛下放置168小时时的半导体背面保护薄膜11的吸湿率优选为1重量%以下、更优选为0.8重量%以下。通过为1重量%以下,能够提高激光标记性。吸湿率可通过无机填充剂的含量等来控制。半导体背面保护薄膜11中的吸湿率的测定方法如下所示。即,将半导体背面保护薄膜11在85℃、85%RH的恒温恒湿槽中放置168小时,并根据放置前后的重量减少率求出吸湿率。
半导体背面保护薄膜11为未固化状态。未固化状态包含半固化状态。优选为半固化状态。
将通过使半导体背面保护薄膜11固化而得到的固化物在85℃和85%RH的气氛下放置168小时时的吸湿率优选为1重量%以下、更优选为0.8重量%以下。通过为1重量%以下,能够提高激光标记性。吸湿率可通过无机填充剂的含量等来控制。固化物中的吸湿率的测定方法如下所示。即,将固化物在85℃、85%RH的恒温恒湿槽中放置168小时,并根据放置前后的重量减少率求出吸湿率。
半导体背面保护薄膜11中的挥发成分的比例越少越好。具体而言,加热处理后的半导体背面保护薄膜11的重量减少率(重量减少量的比例)优选为1重量%以下、更优选为0.8重量%以下。加热处理的条件例如为250℃、1小时。为1重量%以下时,激光标记性良好。能够抑制回流焊工序中产生裂纹。重量减少率是指将热固化后的半导体背面保护薄膜11在250℃下加热1小时时的数值。
半导体背面保护薄膜11的未固化状态下的23℃下的拉伸储能模量优选为1GPa以上、更优选为2GPa以上、进一步优选为3GPa以上。为1GPa以上时,能够防止半导体背面保护薄膜11附着于载带。23℃下的拉伸储能模量的上限例如为50GPa。23℃下的拉伸储能模量可通过树脂成分的种类和/或其含量、填充材料的种类和/或其含量等来控制。使用Rheometric Scientific Ltd制造的动态粘弹性测定装置“Solid Analyzer RS A2”,在拉伸模式下,利用样品宽度:10mm、样品长度:22.5mm、样品厚度:0.2mm、频率:1Hz、升温速度:10℃/分钟的条件,在氮气气氛下以特定的温度(23℃)测定拉伸储能模量。
半导体背面保护薄膜11的可见光(波长:380nm~750nm)的透光率(可见光透射率)没有特别限定,例如优选为20%以下(0%~20%)的范围、更优选为10%以下(0%~10%)、特别优选为5%以下(0%~5%)。半导体背面保护薄膜11的可见光透射率大于20%时,由于光线透射而有可能对半导体芯片造成不良影响。此外,可见光透射率(%)可以通过半导体背面保护薄膜11的树脂成分的种类和/或其含量、着色剂(颜料、染料等)的种类和/或其含量、无机填充材料的含量等来控制。
半导体背面保护薄膜11的可见光透射率(%)如下那样操作来测定。即,制作厚度(平均厚度)为20μm的半导体背面保护薄膜11单体。接着,针对半导体背面保护薄膜11,以特定的强度照射波长为380nm~750nm的可见光线[装置:岛津制作所制造的可见光发生装置(商品名“ABSORPTION SPECTRO PHOTOMETER”)],测定所透射的可见光线的强度。进而,根据可见光线透射半导体背面保护薄膜11前后的强度变化,能够求出可见光透射率的值。
半导体背面保护薄膜11优选包含着色剂。着色剂例如为染料、颜料。其中优选为染料,更优选为黑色染料。
半导体背面保护薄膜11中的着色剂的含量优选为0.5重量%以上、更优选为1重量%以上、进一步优选为2重量%以上。半导体背面保护薄膜11中的着色剂的含量优选为10重量%以下、更优选为8重量%以下、进一步优选为5重量%以下。
半导体背面保护薄膜11可以包含热塑性树脂。作为热塑性树脂,可列举出例如天然橡胶、丁基橡胶、异戊橡胶、氯丁橡胶、乙烯-醋酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯树脂、聚碳酸酯树脂、热塑性聚酰亚胺树脂、6-尼龙、6,6-尼龙等聚酰胺树脂、苯氧基树脂、丙烯酸类树脂、PET(聚对苯二甲酸乙二醇酯)、PBT(聚对苯二甲酸丁二醇酯)等饱和聚酯树脂、聚酰胺酰亚胺树脂或氟树脂等。热塑性树脂可以单独使用或者组合使用2种以上。其中,适合为丙烯酸类树脂、苯氧基树脂。
半导体背面保护薄膜11中的热塑性树脂的含量优选为10重量%以上、更优选为30重量%以上。半导体背面保护薄膜11中的热塑性树脂的含量优选为90重量%以下、更优选为70重量%以下。
半导体背面保护薄膜11包含热固化性树脂。作为热固化性树脂,可列举出环氧树脂、酚醛树脂、氨基树脂、不饱和聚酯树脂、聚氨酯树脂、有机硅树脂、热固化性聚酰亚胺树脂等。热固化性树脂可以单独使用或者组合使用2种以上。作为热固化性树脂,特别适合为会腐蚀半导体芯片的离子性杂质等的含量少的环氧树脂。此外,作为环氧树脂的固化剂,可适合地使用酚醛树脂。
作为环氧树脂,没有特别限定,可以使用例如双酚A型环氧树脂、双酚F型环氧树脂、双酚S型环氧树脂、溴化双酚A型环氧树脂、氢化双酚A型环氧树脂、双酚AF型环氧树脂、联苯型环氧树脂、萘型环氧树脂、芴型环氧树脂、苯酚酚醛清漆型环氧树脂、邻甲酚酚醛清漆型环氧树脂、三羟基苯基甲烷型环氧树脂、四羟基苯基乙烷型环氧树脂等二官能环氧树脂、多官能环氧树脂、或者乙内酰脲型环氧树脂、异氰脲酸三缩水甘油酯型环氧树脂或缩水甘油胺型环氧树脂等环氧树脂。
进而,酚醛树脂作为环氧树脂的固化剂而发挥作用,可列举出例如苯酚酚醛清漆树脂、苯酚芳烷基树脂、甲酚酚醛清漆树脂、叔丁基苯酚酚醛清漆树脂、壬基苯酚酚醛清漆树脂等酚醛清漆型酚醛树脂;甲阶型酚醛树脂、聚对羟基苯乙烯等聚羟基苯乙烯等。酚醛树脂可以单独使用或者组合使用2种以上。这些酚醛树脂之中,特别优选为苯酚酚醛清漆树脂、苯酚芳烷基树脂。这是因为,能够提高半导体装置的连接可靠性。
环氧树脂与酚醛树脂的配混比例适合的是例如,以酚醛树脂中的羟基相对于环氧树脂中的环氧基1当量达到0.5当量~2.0当量的方式进行配混。更适合为0.8当量~1.2当量。
半导体背面保护薄膜11中的热固化性树脂的含量优选为2重量%以上、更优选为5重量%以上。半导体背面保护薄膜11中的热固化性树脂的含量优选为40重量%以下、更优选为20重量%以下。
半导体背面保护薄膜11可以包含热固化促进催化剂。例如为胺系固化促进剂、磷系固化促进剂、咪唑系固化促进剂、硼系固化促进剂、磷-硼系固化促进剂等。
为了使半导体背面保护薄膜11预先进行某种程度的交联,优选的是,在制作时预先添加会与聚合物的分子链末端的官能团等发生反应的多官能性化合物来作为交联剂。由此,能够提高高温下的粘接特性,实现耐热性的改善。
半导体背面保护薄膜11可以包含填充剂。适合为无机填充剂。无机填充剂例如为二氧化硅、粘土、石膏、碳酸钙、硫酸钡、氧化铝、氧化铍、碳化硅、氮化硅、铝、铜、银、金、镍、铬、铅、锡、锌、钯、焊料等。填充剂可以单独使用或者组合使用2种以上。其中,优选为二氧化硅,特别优选为熔融二氧化硅。无机填充剂的平均粒径优选在0.1μm~80μm的范围内。无机填充剂的平均粒径例如可以通过激光衍射型粒度分布测定装置来测定。
半导体背面保护薄膜11中的填充剂的含量优选为10重量%以上、更优选为20重量%以上。半导体背面保护薄膜11中的填充剂的含量优选为70重量%以下、更优选为50重量%以下。
半导体背面保护薄膜11可以适当包含其它添加剂。作为其它添加剂,可列举出例如阻燃剂、硅烷偶联剂、离子捕获剂、增量剂、防老剂、抗氧化剂、表面活性剂等。
半导体背面保护薄膜11的厚度优选为2μm以上、更优选为4μm以上、进一步优选为6μm以上、特别优选为10μm以上。半导体背面保护薄膜11的厚度优选为200μm以下、更优选为160μm以下、进一步优选为100μm以下、特别优选为80μm以下。
(密封片4)
密封片4包含树脂层41和配置在树脂层41上的剥离衬垫42。树脂层41的厚度优选为10μm以上、更优选为20μm以上、进一步优选为30μm以上。树脂层41的厚度优选为1000μm以下、更优选为300μm以下、进一步优选为200μm以下。
树脂层41包含热固化性树脂。作为热固化性树脂,可列举出环氧树脂、酚醛树脂等。
作为环氧树脂,没有特别限定。可以使用例如三苯基甲烷型环氧树脂、甲酚酚醛清漆型环氧树脂、联苯型环氧树脂、改性双酚A型环氧树脂、双酚A型环氧树脂、双酚F型环氧树脂、改性双酚F型环氧树脂、二环戊二烯型环氧树脂、苯酚酚醛清漆型环氧树脂、苯氧基树脂等各种环氧树脂。这些环氧树脂可以单独使用,也可以组合使用2种以上。
从确保环氧树脂的反应性的观点出发,优选的是,环氧当量为150~250、软化点或熔点为50~130℃、在常温下为固体的树脂。其中,从可靠性的观点出发,更优选为三苯基甲烷型环氧树脂、甲酚酚醛清漆型环氧树脂、联苯型环氧树脂。此外,优选为双酚F型环氧树脂。
酚醛树脂只要与环氧树脂之间发生固化反应就没有特别限定。可以使用例如苯酚酚醛清漆树脂、苯酚芳烷基树脂、联苯芳烷基树脂、二环戊二烯型酚醛树脂、甲酚酚醛清漆树脂、甲阶树脂(resol resin)等。这些酚醛树脂可以单独使用,也可以组合使用2种以上。
作为酚醛树脂,从与环氧树脂反应的反应性的观点出发,优选使用羟基当量为70~250、软化点为50~110℃的树脂。从固化反应性高的观点出发,可适合地使用苯酚酚醛清漆树脂。此外,从可靠性的观点出发,可适合地使用苯酚芳烷基树脂、联苯芳烷基树脂之类的低吸湿性树脂。
树脂层41中的环氧树脂和酚醛树脂的总含量优选为5重量%以上。为5重量%以上时,能够良好地获得对于半导体芯片等的粘接力。树脂层41中的环氧树脂和酚醛树脂的总含量优选为40重量%以下、更优选为20重量%以下。为40重量%以下时,能够将吸湿性抑制得较低。
关于环氧树脂与酚醛树脂的配混比例,从固化反应性的观点出发,优选以酚醛树脂中的羟基的总计相对于环氧树脂中的环氧基1当量达到0.7~1.5当量的方式进行配混,更优选为0.9~1.2当量。
树脂层41优选包含固化促进剂。作为固化促进剂,只要使环氧树脂与酚醛树脂进行固化就没有特别限定,可列举出例如2-甲基咪唑(商品名;2MZ)、2-十一烷基咪唑(商品名;C11-Z)、2-十七烷基咪唑(商品名;C17Z)、1,2-二甲基咪唑(商品名;1.2DMZ)、2-乙基-4-甲基咪唑(商品名;2E4MZ)、2-苯基咪唑(商品名;2PZ)、2-苯基-4-甲基咪唑(商品名;2P4MZ)、1-苄基-2-甲基咪唑(商品名;1B2MZ)、1-苄基-2-苯基咪唑(商品名;1B2PZ)、1-氰基乙基-2-甲基咪唑(商品名;2MZ-CN)、1-氰基乙基-2-十一烷基咪唑(商品名;C11Z-CN)、1-氰基乙基-2-苯基咪唑鎓偏苯三酸酯(商品名;2PZCNS-PW)、2,4-二氨基-6-[2’-甲基咪唑基-(1’)]乙基均三嗪(商品名;2MZ-A)、2,4-二氨基-6-[2’-十一烷基咪唑基-(1’)]乙基均三嗪(商品名;C11Z-A)、2,4-二氨基-6-[2’-乙基-4’-甲基咪唑基-(1’)]乙基均三嗪(商品名;2E4MZ-A)、2,4-二氨基-6-[2’-甲基咪唑基-(1’)]乙基均三嗪异氰脲酸加成物(商品名;2MA-OK)、2-苯基-4,5-二羟基甲基咪唑(商品名;2PHZ-PW)、2-苯基-4-甲基-5-羟基甲基咪唑(商品名;2P4MHZ-PW)等咪唑系固化促进剂(均为四国化成工业株式会社制)。其中,从制作树脂层41时的混炼温度下的固化反应受到抑制的理由出发,优选为咪唑系固化促进剂,更优选为2-苯基-4,5-二羟基甲基咪唑、2,4-二氨基-6-[2’-乙基-4’-甲基咪唑基-(1’)]乙基均三嗪,进一步优选为2-苯基-4,5-二羟基甲基咪唑。
固化促进剂的含量相对于环氧树脂和酚醛树脂的总计100重量份优选为0.2重量份以上、更优选为0.5重量份以上、进一步优选为0.8重量份以上。固化促进剂的含量相对于环氧树脂和酚醛树脂的总计100重量份优选为5重量份以下、更优选为2重量份以下。
树脂层41可以包含热塑性树脂。作为热塑性树脂,优选为弹性体。作为热塑性树脂,可列举出天然橡胶、丁基橡胶、异戊橡胶、氯丁橡胶、乙烯-醋酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯树脂、聚碳酸酯树脂、热塑性聚酰亚胺树脂、6-尼龙、6,6-尼龙等聚酰胺树脂、苯氧基树脂、丙烯酸类树脂、PET、PBT等饱和聚酯树脂、聚酰胺酰亚胺树脂、氟树脂、苯乙烯-异丁烯-苯乙烯三嵌段共聚物、甲基丙烯酸甲酯-丁二烯-苯乙烯共聚物(MBS树脂)等。这些热塑性树脂可以单独使用,或者组合使用2种以上。
树脂层41中的热塑性树脂的含量优选为1重量%以上。为1重量%以上时,可以赋予柔软性、挠性。树脂层41中的热塑性树脂的含量优选为30重量%以下、更优选为10重量%以下、进一步优选为5重量%以下。为30重量%以下时,能够良好地获得对于半导体芯片等的粘接力。
树脂层41可以包含填充剂。填充剂的平均粒径优选为0.5μm以上、更优选为1μm以上、进一步优选为3μm以上。填充剂的平均粒径优选为50μm以下、更优选为30μm以下、进一步优选为20μm以下。作为填充剂,可列举出例如无机填充剂。作为无机填充剂,可列举出例如石英玻璃、滑石、二氧化硅(熔融二氧化硅、结晶二氧化硅等)、氧化铝、氮化铝、氮化硅、氮化硼等。其中,从能够良好地降低热膨胀系数的理由出发,优选为二氧化硅、氧化铝,更优选为二氧化硅。作为二氧化硅,从流动性优异的理由出发,优选为熔融二氧化硅,更优选为球状熔融二氧化硅。无机填充剂可以用硅烷偶联剂进行了处理(前处理)。由此能够提高无机填充剂的分散性。
树脂层41中的填充剂的含量优选为20体积%以上,更优选为70体积%以上,进一步优选为74体积%以上。填充剂的含量优选为90体积%以下,更优选为85体积%以下。
填充剂的含量也可以以“重量%”作为单位进行说明。代表而言,针对二氧化硅的含量,以“重量%”作为单位进行说明。二氧化硅的比重通常为2.2g/cm3,因此,二氧化硅的含量(重量%)的适合范围例如如下所示。即,树脂层41中的二氧化硅的含量优选为81重量%以上、更优选为84重量%以上。树脂层41中的二氧化硅的含量优选为94重量%以下、更优选为91重量%以下。
氧化铝的比重通常为3.9g/cm3,因此,氧化铝的含量(重量%)的适合范围例如如下所示。即,树脂层41中的氧化铝的含量优选为88重量%以上、更优选为90重量%以上。树脂层41中的氧化铝的含量优选为97重量%以下、更优选为95重量%以下。
树脂层41中,除了前述成分之外,有时还适当含有阻燃剂成分、颜料等。作为阻燃剂成分,可以使用例如氢氧化铝、氢氧化镁、氢氧化铁、氢氧化钙、氢氧化锡、复合化金属氢氧化物等各种金属氢氧化物;磷腈化合物等。其中,从阻燃性、固化后的强度优异的理由出发,优选为磷腈化合物。作为颜料,没有特别限定,可列举出炭黑等。
剥离衬垫42例如为聚对苯二甲酸乙二醇酯(PET)薄膜。
(变形例1)
如图9所示那样,变形例1中,粘合片12还包含非热膨胀性的第3粘合剂层125。第3粘合剂层125位于第1粘合剂层121与半导体背面保护薄膜11之间。第3粘合剂层125不具有因加热而膨胀的性质。第3粘合剂层125用于防止热膨胀性微球膨胀时产生的污染物质(气体、有机成分等)从第1粘合剂层121转移至半导体背面保护薄膜11。
(变形例2)
如图10所示那样,变形例2中,粘合片12还包含位于第1粘合剂层121与基材层123之间的橡胶状有机弹性层126。橡胶状有机弹性层126能够防止因膨胀而使第1粘合剂层121产生的变形传递至第2粘合剂层122等。橡胶状有机弹性层126不具有因加热而膨胀的性质。橡胶状有机弹性层126的主要成分为合成橡胶、合成树脂等。橡胶状有机弹性层126的厚度优选为3μm以上、更优选为5μm以上。橡胶状有机弹性层126的厚度优选为500μm以下、更优选为300μm以下、进一步优选为150μm以下。
(变形例3)
变形例3中,使半导体背面保护薄膜11固化,并通过传递成型或压缩成型来密封位于固化后的半导体背面保护薄膜11上的半导体芯片31a、31b、31c、31d。
(变形例4)
变形例4中,使半导体背面保护薄膜11固化,越过支撑体21用激光在固化后的半导体背面保护薄膜11上印刷,在半导体芯片31a、31b、31c上配置密封片4。
(变形例5)
变形例5中,形成切割前半导体封装体6,越过支撑体21用激光在固化后的半导体背面保护薄膜11上印刷,对切割前半导体封装体6进行切割。
(变形例6)
变形例6中,通过切割而形成半导体封装体7,越过支撑体21用激光在切割后半导体背面保护薄膜111上印刷,加热粘合片12。
(变形例7)
变形例7中,加热粘合片12,越过支撑体21用激光在切割后半导体背面保护薄膜111上印刷,将半导体封装体从第1粘合剂层121上剥离。
(其它)
变形例1~变形例7等可以任意组合。
如上所述,实施方式1所述的半导体封装体的制造方法包括如下工序:在粘合片12的第2主面上固定硬质的支撑体21的工序;在配置在粘合片12的第1主面上的半导体背面保护薄膜11上配置半导体芯片31的工序;使半导体背面保护薄膜11固化的工序;以及,用树脂41密封半导体芯片31的工序。
实施例
以下,例示性地详细说明本发明的适合实施例。其中,在没有特别记载的情况下,本发明的范围不限定于该实施例记载的材料、配混量等。
[实施例1]
(半导体背面保护薄膜的制作)
将相对于100重量份以丙烯酸乙酯-甲基丙烯酸甲酯作为主要成分的丙烯酸酯类聚合物(根上工业株式会社制PARACRON W-197C)的固体成分(不包括溶剂在内的固体成分)为10重量份的环氧树脂(大日本油墨株式会社制HP-4700)、10重量份的酚醛树脂(明和化成株式会社制MEH7851-H)、85重量份的球状二氧化硅(Admatechs Co.,Ltd.制SO-25R平均粒径为0.5μm的球状二氧化硅)、10重量份的染料(Orient Chemical Industry Co.,Ltd.制OIL BLACK BS)和10重量份的催化剂(四国化成株式会社制2PHZ)溶解于甲乙酮,从而制备固体成分浓度为23.6重量%的树脂组合物的溶液。将树脂组合物的溶液涂布在剥离衬垫(进行了有机硅脱模处理的厚度50μm的聚对苯二甲酸乙二醇酯薄膜)上,在130℃下干燥2分钟。通过上述手段而得到平均厚度为20μm的薄膜。从薄膜上切出直径为230mm的圆盘状薄膜(以下在实施例中称为“半导体背面保护薄膜”)。
(层叠体的制作)
使用手压辊使半导体背面保护薄膜附于双面粘合片“日东电工株式会社制Revalpha 3195V”的热剥离粘合剂层上,从而制作层叠体。层叠体包含双面粘合片和固定于双面粘合片的热剥离粘合剂层上的半导体背面保护薄膜(参照图2)。
(密封)
在层叠体的双面粘合片上固定玻璃板(参照图3)。在120℃下向层叠体的半导体背面保护薄膜上压接5mm见方的芯片(厚度为0.1mm)(参照图4)。通过将包含玻璃板、双面粘合片、半导体背面保护薄膜和5mm见方的芯片的组合在120℃下加热120分钟,从而使半导体背面保护薄膜固化。将5mm见方的芯片埋入至片状的密封树脂中,在150℃下加热120分钟,从而使密封树脂固化(参照图5~6)。通过上述手段而得到实施例1的封装体。
[比较例1]
除了未进行密封前的半导体背面保护薄膜的固化之外,利用与实施例1相同的方法来获得比较例1的封装体。
[评价]
5mm见方的芯片发生位置偏移时判定为×,未发生位置偏移时判定为○。将结果示于表1。
[表1]
实施例1 | 比较例1 | |
位置偏移 | 〇 | × |
Claims (4)
1.一种半导体封装体的制造方法,其包括如下工序:
在配置在粘合片上的半导体背面保护薄膜上配置半导体芯片的工序;
在所述半导体背面保护薄膜上配置所述半导体芯片的工序之后,使所述半导体背面保护薄膜固化的工序;以及
使所述半导体背面保护薄膜固化的工序之后,用树脂密封所述半导体芯片的工序。
2.根据权利要求1所述的半导体封装体的制造方法,其中,所述粘合片包含第1粘合剂层、第2粘合剂层、以及位于所述第1粘合剂层与所述第2粘合剂层之间的基材层,
所述第1粘合剂层具有通过加热而剥离力降低的性质,
所述制造方法还包括在所述第2粘合剂层上固定硬质支撑体的工序。
3.根据权利要求2所述的半导体封装体的制造方法,其中,所述第1粘合剂层包含通过加热而膨胀的热膨胀性微球。
4.根据权利要求3所述的半导体封装体的制造方法,其中,所述热膨胀性微球的加热膨胀的开始温度为130℃以上。
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