WO2020118834A1 - 掩膜版组合和使用掩膜版组合将半导体薄膜图形化的方法 - Google Patents

掩膜版组合和使用掩膜版组合将半导体薄膜图形化的方法 Download PDF

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Publication number
WO2020118834A1
WO2020118834A1 PCT/CN2019/071320 CN2019071320W WO2020118834A1 WO 2020118834 A1 WO2020118834 A1 WO 2020118834A1 CN 2019071320 W CN2019071320 W CN 2019071320W WO 2020118834 A1 WO2020118834 A1 WO 2020118834A1
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Prior art keywords
light
transmitting
mask
shielding
area
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PCT/CN2019/071320
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English (en)
French (fr)
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孙朴
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武汉华星光电半导体显示技术有限公司
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Priority to US16/325,408 priority Critical patent/US11158799B2/en
Publication of WO2020118834A1 publication Critical patent/WO2020118834A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures

Definitions

  • the present invention relates to the field of electronic display, and in particular to a mask combination and a method for patterning a semiconductor thin film using the mask combination.
  • the OLED display device can display without a backlight, it has been widely used.
  • vapor deposition is a very important process.
  • the tool used for graphic definition is a metal mask, which can be divided into precision metal masks and general-purpose metal masks.
  • Precision metal masks are used for pixel definition, mainly for R, G, B pixel layers and doped material evaporation.
  • the universal metal reticle is used for the definition of the common layer pattern, and is mainly used for the evaporation of materials such as the electron injection layer, the hole injection layer, the electron transport layer, and the hole transport layer.
  • the method for forming the "Mediterranean” type display screen is usually brute force cutting, that is, after the display area is manufactured, the display elements in the "Mediterranean” area are removed by laser cutting, and other non-display elements are embedded.
  • violent cutting will seriously damage the light-emitting element, and it is difficult to accurately control.
  • the invention provides a mask plate combination and a method for patterning a semiconductor thin film using the mask plate combination to realize a "Mediterranean" display structure on an OLED display screen.
  • the present invention provides a mask combination including a first mask and a second mask, the first mask and the second mask have the same shape And size, where,
  • the first mask plate includes a plurality of first light-shielding regions, a plurality of first light-transmitting regions, and at least one first light-shielding island.
  • the plurality of first light-shielding regions and the first light-transmitting regions are parallel to each other and The first mask plate is distributed at intervals, and the first shading island covers part of the first shading area and the first light-transmitting area; the boundary of the first shading island is not connected to the boundary of the mask plate;
  • the second mask plate includes a plurality of second light-shielding regions, a plurality of second light-transmitting regions, and at least one second light-shielding island.
  • the plurality of second light-shielding regions and the second light-transmitting regions are parallel to each other and Spaced apart on the second mask plate, the second light-shielding island covers part of the second light-shielding area and the second light-transmitting area; the boundary of the second light-shielding island is not in contact with the boundary of the mask ;among them,
  • the first light-shielding area and the second light-shielding area are complementary, and the first light-transmitting area and the second light-transmitting area are complementary; the first light-transmitting island and the second light-transmitting island have The same shape, size and position, and overlap each other.
  • the shapes of the first light-transmitting island and the second light-transmitting island include, but are not limited to, a circle, an ellipse, a triangle, a rectangle, a polygon, and a heart.
  • first mask plate and the second mask plate are strip-shaped equidistant patterns, and the first light-shielding area, the first light-transmitting area, the second light-shielding area and the second light-transmitting area are parallel to the first The band pattern of the symmetry axis of one mask and the second mask.
  • the width of the band-shaped pattern is less than or equal to 5 ⁇ m.
  • first mask and the second mask are rectangular, and the first light-shielding area, the first light-transmitting area, the second light-shielding area and the second light-transmitting area are parallel to the first mask A strip-shaped pattern on one side of the second mask plate, the strip-shaped pattern having the same shape and size, the position of the first light-shielding area coincides with the position of the second light-transmitting area, the second The position of the light-shielding area coincides with the position of the first light-transmitting area shown.
  • the present invention provides a reticle combination comprising a first reticle and a second reticle, the first reticle and the second reticle having the same shape and size, wherein ,
  • the first mask plate includes a plurality of first light-shielding regions, a plurality of first light-transmitting regions, and at least one first light-shielding island.
  • the plurality of first light-shielding regions and the first light-transmitting regions are parallel to each other and The first mask plate is distributed at intervals, and the first shading island covers part of the first shading area and the first light-transmitting area; the boundary of the first shading island is not connected to the boundary of the mask plate;
  • the second mask plate includes a plurality of second light-shielding regions, a plurality of second light-transmitting regions, and at least one second light-shielding island.
  • the plurality of second light-shielding regions and the second light-transmitting regions are parallel to each other and Spaced apart on the second mask plate, the second light-shielding island covers part of the second light-shielding area and the second light-transmitting area; the boundary of the second light-shielding island is not in contact with the boundary of the mask ;among them,
  • the first light-shielding area and the second light-shielding area are complementary, and the first light-transmitting area and the second light-transmitting area are complementary; the first light-transmitting island and the second light-transmitting island have The same shape, size and position, and overlap each other.
  • the shapes of the first light-transmitting island and the second light-transmitting island include, but are not limited to, a circle, an ellipse, a triangle, a rectangle, a polygon, and a heart.
  • first mask plate and the second mask plate are strip-shaped equidistant patterns, and the first light-shielding area, the first light-transmitting area, the second light-shielding area and the second light-transmitting area are parallel to the first The band pattern of the symmetry axis of one mask and the second mask.
  • the width of the band-shaped pattern is less than or equal to 5 ⁇ m.
  • first mask and the second mask are rectangular, and the first light-shielding area, the first light-transmitting area, the second light-shielding area and the second light-transmitting area are parallel to the first mask A strip-shaped pattern on one side of the second mask plate, the strip-shaped pattern having the same shape and size, the position of the first light-shielding area coincides with the position of the second light-transmitting area, the second The position of the light-shielding area coincides with the position of the first light-transmitting area shown.
  • the present invention also provides a method for patterning a semiconductor thin film using a mask combination, wherein the mask combination includes a first mask and a second mask, the first mask It has the same shape and size as the second mask; the method includes the following steps:
  • the first mask includes a plurality of first light-shielding regions, a plurality of first light-transmitting regions, and at least one first light-shielding island, so The plurality of first light-shielding areas and the first light-transmitting areas are parallel to each other, and are spaced apart on the first mask plate, and the first light-shielding island covers part of the first light-shielding areas and the first light-transmitting areas;
  • the boundary of the first shading island is not connected to the boundary of the mask;
  • the second mask includes a plurality of second light-shielding regions, a plurality of second light-transmitting regions, and at least one second light-shielding island, so The plurality of second light-shielding areas and the second light-transmitting areas are parallel to each other and are spaced apart on the second mask plate, and the second light-shielding island covers part of the second light-shielding areas and the second light-transmitting areas;
  • the boundary of the second shading island is not in contact with the boundary of the reticle; the first shading area and the second shading area are complementarily provided, and the first light-transmitting area and the second light-transmitting area
  • the regions are complementary; the first light-transmitting island and the second light-transmitting island have the same shape, size and position, and are overlapped with each other.
  • the shapes of the first light-transmitting island and the second light-transmitting island include, but are not limited to, a circle, an ellipse, a triangle, a rectangle, a polygon, and a heart.
  • first mask plate and the second mask plate are strip-shaped equidistant patterns, and the first light-shielding area, the first light-transmitting area, the second light-shielding area and the second light-transmitting area are parallel to the first The band pattern of the symmetry axis of one mask and the second mask.
  • the width of the band-shaped pattern is less than or equal to 5 ⁇ m.
  • first mask and the second mask are rectangular, and the first light-shielding area, the first light-transmitting area, the second light-shielding area and the second light-transmitting area are parallel to the first mask A strip-shaped pattern on one side of the second mask plate, the strip-shaped pattern having the same shape and size, the position of the first light-shielding area coincides with the position of the second light-transmitting area, the second The position of the light-shielding area coincides with the position of the first light-transmitting area shown.
  • the mask plate combination provided by the present invention realizes the overall evaporation of the OLED display area through the complementary shading area and the light-transmitting area, and realizes the shielding of the "Mediterranean" non-display area through the overlapping shading islands. Avoid laser cutting the display area. Since the width of the light-shielding area and the light-transmitting area does not exceed 5 ⁇ m, the height difference between the patterns formed by the two patterns can be basically eliminated, and the formation of the “Mediterranean” type non-display area, while avoiding the formation of uneven evaporation patterns in the display area .
  • FIG. 1 is a schematic structural diagram of a "Mediterranean" OLED display screen in a specific embodiment of the present invention
  • FIG. 2 is a schematic structural diagram of a first mask in a specific embodiment of the present invention.
  • FIG. 3 is a schematic structural diagram of a second mask in a specific embodiment of the present invention.
  • the invention provides a mask plate combination and a method for patterning a semiconductor thin film using the mask plate combination to realize a "Mediterranean" display structure on an OLED display screen.
  • the present invention provides a mask plate combination, which includes a first mask plate 10 and a second mask plate, the first mask plate 10 and the second mask plate 20 have the same Shape and size.
  • the first mask 10 includes a plurality of first light-shielding regions 14, a plurality of first light-transmitting regions 16 and at least one first light-shielding island 12.
  • the plurality of first light-shielding regions 14 and the first light-transmitting regions 16 are parallel to each other, and are spaced apart on the first mask 10.
  • the first shading island 12 covers part of the first shading area 14 and the first light-transmitting area 16. The boundary of the first shading island 12 is not connected to the boundary of the mask.
  • the second reticle 20 includes a plurality of second light-shielding regions 26, a plurality of second light-transmitting regions 24, and at least one second light-shielding island 22.
  • the plurality of second light-shielding regions 26 and the second light-transmitting regions 24 are parallel to each other, and are spaced apart on the second mask plate 20.
  • the second shading island 22 covers part of the second shading area 26 and the second light-transmitting area 24. The boundary of the second shading island 22 is not in contact with the boundary of the mask.
  • the first light-shielding area 14 and the second light-shielding area 26 are complementary, the first light-transmitting area 16 and the second light-transmitting area 24 are complementary; the first light-transmitting island and the second The light-transmitting islands have the same shape, size and position, and are arranged overlapping each other.
  • the areas of the first light-transmitting island and the second light-transmitting island are not smaller than the plurality of first light-shielding regions 14, the plurality of first light-transmitting regions 16, and the plurality of second light-shielding regions 26 and 100 times the area of any one of the plurality of second light-transmitting regions 24.
  • the area of the first light-transmitting island and the second light-transmitting island is not less than 0.5 cm 2 .
  • the shapes of the first light-transmitting island and the second light-transmitting island include, but are not limited to, a circle, an ellipse, a triangle, a rectangle, a polygon, and a heart.
  • the first reticle 10 and the second reticle 20 are strip-shaped equidistant patterns
  • the two light-transmitting regions 24 are strip patterns parallel to the symmetry axes of the first reticle 10 and the second reticle 20, and the width of the strip pattern is less than or equal to 5 ⁇ m.
  • the first mask 10 and the second mask 20 are rectangular, and the first light-shielding area 14, the first light-transmitting area 16, the second light-shielding area 26 and the second light-transmitting area 24 are parallel to A band-shaped pattern on one side of the first mask 10 and the second mask 20, the band-shaped patterns have the same shape and size, and the position of the first light-shielding area 14 is as shown in the second transparent The positions of the light areas 24 coincide, and the positions of the second light-shielding areas 26 coincide with the positions of the first light-transmitting areas 16 shown.
  • the present invention also provides a method for patterning a semiconductor thin film using a mask combination
  • the mask combination includes a first mask 10 and a second mask 20, the first mask Plate 10 and second mask plate 20 have the same shape and size; the method includes the following steps:
  • the first mask 10 includes a plurality of first light-shielding regions 14, a plurality of first light-transmitting regions 16, and at least one first light-shielding island 12, the plurality of first light-shielding regions 14 and the first light-transmitting The regions 16 are parallel to each other and are spaced apart on the first reticle 10, and the first shading island 12 covers part of the first shading region 14 and the first light-transmitting region 16; the first shading island 12 Is not connected to the boundary of the mask;
  • the second mask plate 20 includes a plurality of second light-shielding regions 26, a plurality of second light-transmitting regions 24, and at least one second light-shielding island 22, and the plurality of second light-shielding regions 26 and the second light-transmitting regions The regions 24 are parallel to each other and are spaced apart on the second reticle 20.
  • the second shading island 22 covers part of the second shading region 26 and the second light-transmitting region 24; the second shading island 22 Is not in contact with the boundary of the reticle; the first light-shielding area 14 and the second light-shielding area 26 are complementary, and the first light-transmitting area 16 and the second light-transmitting area 24 are complementary Setting; the first light-transmitting island and the second light-transmitting island have the same shape, size and position, and are overlapped with each other.
  • the areas of the first light-transmitting island and the second light-transmitting island are not smaller than the plurality of first light-shielding regions 14, the plurality of first light-transmitting regions 16, and the plurality of second light-shielding regions 26 and 100 times the area of any one of the plurality of second light-transmitting regions 24, and the area of the first light-transmitting island and the second light-transmitting island is not less than 0.5 cm 2 ;
  • the shapes of the island and the second light-transmitting island include, but are not limited to, a circle, an ellipse, a triangle, a rectangle, a polygon, and a heart.
  • the first reticle 10 and the second reticle 20 are strip-shaped equidistant patterns
  • the two light-transmitting regions 24 are strip patterns parallel to the symmetry axes of the first reticle 10 and the second reticle 20, and the width of the strip pattern is less than or equal to 5 ⁇ m.
  • the first mask 10 and the second mask 20 are rectangular, and the first light-shielding area 14, the first light-transmitting area 16, the second light-shielding area 26, and the second light-transmitting area 24 is a strip pattern parallel to one side of the first mask 10 and the second mask 20, the strip patterns have the same shape and size, and the position of the first shading area 14 is The position of the second light-transmitting area 24 is shown to be coincident, and the position of the second light-shielding area 26 is coincident with the position of the first light-transmitting area 16 shown.
  • the mask plate combination provided by the present invention realizes the overall evaporation of the OLED display area through the complementary shading area and the light-transmitting area, and realizes the shielding of the "Mediterranean" non-display area through the overlapping shading islands. Avoid laser cutting the display area. Since the width of the light-shielding area and the light-transmitting area does not exceed 5 ⁇ m, the height difference between the patterns formed by the two patterns can be basically eliminated, and the formation of the “Mediterranean” type non-display area, while avoiding the formation of uneven evaporation patterns in the display area .

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

一种掩膜版组合和使用掩膜版组合将半导体薄膜图形化的方法。所述掩膜版组合包括第一掩膜版（10）和第二掩膜版（20），其中，所述第一掩膜版（10）包括多个第一遮光区（14）、多个第一透光区（16）和至少一个第一遮光岛（12）；所述第一遮光岛（12）的边界不与所述掩膜版（10）的边界相连；所述第二掩膜版（20）包括多个第二遮光区（26）、多个第二透光区（24）和至少一个第二遮光岛（22）；所述第二遮光岛（22）的边界不与所述掩膜版（20）的边界相接触；所述第一遮光区（14）和所述第二遮光区（26）互补设置，所述第一透光区（16）和所述第二透光区（24）互补设置。

Description

掩膜版组合和使用掩膜版组合将半导体薄膜图形化的方法 技术领域
本发明涉及电子显示领域，尤其涉及一种掩膜版组合和使用掩膜版组合将半导体薄膜图形化的方法。
 背景技术
由于OLED显示装置不需要背光即可实现显示，目前已经得到了广泛的应用。现阶段，中小尺寸的OLED面板的制作工艺中，蒸镀是很重要的一个工艺环节。在蒸镀制程中，用于图形定义的工具为金属掩模版，可分为精密金属掩膜板和通用金属掩模版。精密金属掩膜板用于像素定义，主要用于R、G、B像素层和掺杂材料蒸镀。通用金属掩模版用于共通层图形定义，主要用于电子注入层、空穴注入层、电子传输层和空穴传输层等的材料蒸镀。
目前，出现了一种新型的类似“地中海”式的屏幕需求，如图1所示，即显示屏的显示区中存在一块被显示区包裹的非显示区，所述非显示区通常用于设置摄像头或其他非显示元件。
 技术问题
目前，形成所述“地中海”式的显示屏的方法为通常为暴力切割，即显示区域制作完成之后通过激光切割去除“地中海”区的显示元件，镶嵌其他非显示元件。然而暴力切割会严重损坏发光元件，且难以精确控制。
 技术解决方案
本发明提供一种掩膜版组合和使用掩膜版组合将半导体薄膜图形化的方法，以在OLED显示屏上实现“地中海”式的显示结构。
为解决上述问题，一方面，本发明提供了一种掩膜版组合，其包括第一掩膜版和第二掩膜版，所述第一掩膜版和第二掩膜版具有相同的形状和大小，其中，
所述第一掩膜版包括多个第一遮光区、多个第一透光区和至少一个第一遮光岛，所述多个第一遮光区和第一透光区彼此平行，且在所述第一掩膜版上间隔分布，所述第一遮光岛覆盖部分所述第一遮光区和第一透光区；所述第一遮光岛的边界不与所述掩膜版的边界相连；
所述第二掩膜版包括多个第二遮光区、多个第二透光区和至少一个第二遮光岛，所述多个第二遮光区和第二透光区彼此平行，且在所述第二掩膜版上间隔分布，所述第二遮光岛覆盖部分所述第二遮光区和第二透光区；所述第二遮光岛的边界不与所述掩膜版的边界相接触；其中，
所述第一遮光区和所述第二遮光区互补设置，所述第一透光区和所述第二透光区互补设置；所述第一透光岛和所述第二透光岛具有相同的形状、尺寸和位置，且彼此重叠设置。
其中所述第一透光岛和所述第二透光岛的形状包括但不限于圆形、椭圆形、三角形、矩形、多边形、心形。
其中所述第一掩膜版和第二掩膜版为带状等间距图形，所述第一遮光区、第一透光区、第二遮光区和第二透光区为平行于所述第一掩膜版和第二掩膜版的对称轴的带状图形。
其中所述带状图形的宽度小于或等于5μm。
其中所述第一掩膜版和第二掩膜版为矩形，所述第一遮光区、第一透光区、第二遮光区和第二透光区为平行于所述第一掩膜版和第二掩膜版的一条边的带状图形，所述带状图形具有相同的形状和尺寸，所述第一遮光区的位置与所示第二透光区的位置重合，所述第二遮光区的位置与所示第一透光区的位置重合。
另一方面，本发明提供了一种掩膜版组合，其包括第一掩膜版和第二掩膜版，所述第一掩膜版和第二掩膜版具有相同的形状和大小，其中，
所述第一掩膜版包括多个第一遮光区、多个第一透光区和至少一个第一遮光岛，所述多个第一遮光区和第一透光区彼此平行，且在所述第一掩膜版上间隔分布，所述第一遮光岛覆盖部分所述第一遮光区和第一透光区；所述第一遮光岛的边界不与所述掩膜版的边界相连；
所述第二掩膜版包括多个第二遮光区、多个第二透光区和至少一个第二遮光岛，所述多个第二遮光区和第二透光区彼此平行，且在所述第二掩膜版上间隔分布，所述第二遮光岛覆盖部分所述第二遮光区和第二透光区；所述第二遮光岛的边界不与所述掩膜版的边界相接触；其中，
所述第一遮光区和所述第二遮光区互补设置，所述第一透光区和所述第二透光区互补设置；所述第一透光岛和所述第二透光岛具有相同的形状、尺寸和位置，且彼此重叠设置。
其中所述第一透光岛和所述第二透光岛的形状包括但不限于圆形、椭圆形、三角形、矩形、多边形、心形。
其中所述第一掩膜版和第二掩膜版为带状等间距图形，所述第一遮光区、第一透光区、第二遮光区和第二透光区为平行于所述第一掩膜版和第二掩膜版的对称轴的带状图形。
其中所述带状图形的宽度小于或等于5μm。
其中所述第一掩膜版和第二掩膜版为矩形，所述第一遮光区、第一透光区、第二遮光区和第二透光区为平行于所述第一掩膜版和第二掩膜版的一条边的带状图形，所述带状图形具有相同的形状和尺寸，所述第一遮光区的位置与所示第二透光区的位置重合，所述第二遮光区的位置与所示第一透光区的位置重合。
相应的，本发明还提供了一种使用掩膜版组合将半导体薄膜图形化的方法，其中所述掩膜版组合包括第一掩膜版和第二掩膜版，所述第一掩膜版和第二掩膜版具有相同的形状和大小；所述方法包括以下步骤：
将第一掩膜版上的图形转移到所述半导体薄膜上；其中，所述第一掩膜版包括多个第一遮光区、多个第一透光区和至少一个第一遮光岛，所述多个第一遮光区和第一透光区彼此平行，且在所述第一掩膜版上间隔分布，所述第一遮光岛覆盖部分所述第一遮光区和第一透光区；所述第一遮光岛的边界不与所述掩膜版的边界相连；
将第二掩膜版上的图形转移到所述半导体薄膜上；其中，所述第二掩膜版包括多个第二遮光区、多个第二透光区和至少一个第二遮光岛，所述多个第二遮光区和第二透光区彼此平行，且在所述第二掩膜版上间隔分布，所述第二遮光岛覆盖部分所述第二遮光区和第二透光区；所述第二遮光岛的边界不与所述掩膜版的边界相接触；所述第一遮光区和所述第二遮光区互补设置，所述第一透光区和所述第二透光区互补设置；所述第一透光岛和所述第二透光岛具有相同的形状、尺寸和位置，且彼此重叠设置。
其中所述第一透光岛和所述第二透光岛的形状包括但不限于圆形、椭圆形、三角形、矩形、多边形、心形。
其中所述第一掩膜版和第二掩膜版为带状等间距图形，所述第一遮光区、第一透光区、第二遮光区和第二透光区为平行于所述第一掩膜版和第二掩膜版的对称轴的带状图形。
其中所述带状图形的宽度小于或等于5μm。
其中所述第一掩膜版和第二掩膜版为矩形，所述第一遮光区、第一透光区、第二遮光区和第二透光区为平行于所述第一掩膜版和第二掩膜版的一条边的带状图形，所述带状图形具有相同的形状和尺寸，所述第一遮光区的位置与所示第二透光区的位置重合，所述第二遮光区的位置与所示第一透光区的位置重合。
 有益效果
本发明提供的掩膜版组合，通过互补设置的遮光区和透光区实现了对OLED显示区的整体蒸镀，通过重叠设置的遮光岛实现了对“地中海”式非显示区的遮挡，从而避免了对显示区进行激光切割。由于遮光区和透光区的宽度不超过5μm，能够基本消除两次图形化形成的图案的高度差，在形成“地中海”式非显示区的同时，避免在显示区形成凹凸不平的蒸镀图案。
 附图说明
图1为本发明的一个具体实施例中的“地中海”式的OLED显示屏的结构示意图；
图2为本发明的一个具体实施例中的第一掩膜版的结构示意图；
图3为本发明的一个具体实施例中的第二掩膜版的结构示意图。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。
本发明提供一种掩膜版组合和使用掩膜版组合将半导体薄膜图形化的方法，以在OLED显示屏上实现“地中海”式的显示结构。下面，将结合附图对本发明进行详细说明。
参见图2和图3，本发明提供了一种掩膜版组合，其包括第一掩膜版10和第二掩膜版，所述第一掩膜版10和第二掩膜版20具有相同的形状和大小。
在本实施例中，参见图1，所述第一掩膜版10包括多个第一遮光区14、多个第一透光区16和至少一个第一遮光岛12。所述多个第一遮光区14和第一透光区16彼此平行，且在所述第一掩膜版10上间隔分布。所述第一遮光岛12覆盖部分所述第一遮光区14和第一透光区16。所述第一遮光岛12的边界不与所述掩膜版的边界相连。
在本实施例中，参见图2，所述第二掩膜版20包括多个第二遮光区26、多个第二透光区24和至少一个第二遮光岛22。所述多个第二遮光区26和第二透光区24彼此平行，且在所述第二掩膜版20上间隔分布。所述第二遮光岛22覆盖部分所述第二遮光区26和第二透光区24。所述第二遮光岛22的边界不与所述掩膜版的边界相接触。
所述第一遮光区14和所述第二遮光区26互补设置，所述第一透光区16和所述第二透光区24互补设置；所述第一透光岛和所述第二透光岛具有相同的形状、尺寸和位置，且彼此重叠设置。
在本实施例中，所述第一透光岛和所述第二透光岛的面积不小于所述多个第一遮光区14、多个第一透光区16、多个第二遮光区26和多个第二透光区24中的任意一个的面积的100倍。具体的，所述第一透光岛和所述第二透光岛的面积不小于0.5cm 2。所述第一透光岛和所述第二透光岛的形状包括但不限于圆形、椭圆形、三角形、矩形、多边形、心形。
在本实施例中，所述第一掩膜版10和第二掩膜版20为带状等间距图形，所述第一遮光区14、第一透光区16、第二遮光区26和第二透光区24为平行于所述第一掩膜版10和第二掩膜版20的对称轴的带状图形，所述带状图形的宽度小于或等于5μm。优选的，述第一掩膜版10和第二掩膜版20为矩形，所述第一遮光区14、第一透光区16、第二遮光区26和第二透光区24为平行于所述第一掩膜版10和第二掩膜版20的一条边的带状图形，所述带状图形具有相同的形状和尺寸，所述第一遮光区14的位置与所示第二透光区24的位置重合，所述第二遮光区26的位置与所示第一透光区16的位置重合。
相应的，本发明还提供了一种使用掩膜版组合将半导体薄膜图形化的方法，所述掩膜版组合包括第一掩膜版10和第二掩膜版20，所述第一掩膜版10和第二掩膜版20具有相同的形状和大小；所述方法包括以下步骤：
首先，将第一掩膜版10上的图形转移到所述半导体薄膜上。其中，所述第一掩膜版10包括多个第一遮光区14、多个第一透光区16和至少一个第一遮光岛12，所述多个第一遮光区14和第一透光区16彼此平行，且在所述第一掩膜版10上间隔分布，所述第一遮光岛12覆盖部分所述第一遮光区14和第一透光区16；所述第一遮光岛12的边界不与所述掩膜版的边界相连；
之后，将第二掩膜版20上的图形转移到所述半导体薄膜上。其中，所述第二掩膜版20包括多个第二遮光区26、多个第二透光区24和至少一个第二遮光岛22，所述多个第二遮光区26和第二透光区24彼此平行，且在所述第二掩膜版20上间隔分布，所述第二遮光岛22覆盖部分所述第二遮光区26和第二透光区24；所述第二遮光岛22的边界不与所述掩膜版的边界相接触；所述第一遮光区14和所述第二遮光区26互补设置，所述第一透光区16和所述第二透光区24互补设置；所述第一透光岛和所述第二透光岛具有相同的形状、尺寸和位置，且彼此重叠设置。
当然，也可以先将第二掩膜版20上的图形转移到所述半导体薄膜上，再将第一掩膜版10上的图形转移到所述半导体薄膜上，都可以形成对“地中海”式非显示区的遮挡。
在本实施例中，所述第一透光岛和所述第二透光岛的面积不小于所述多个第一遮光区14、多个第一透光区16、多个第二遮光区26和多个第二透光区24中的任意一个的面积的100倍，且所述第一透光岛和所述第二透光岛的面积不小于0.5cm 2；所述第一透光岛和所述第二透光岛的形状包括但不限于圆形、椭圆形、三角形、矩形、多边形、心形。
在本实施例中，所述第一掩膜版10和第二掩膜版20为带状等间距图形，所述第一遮光区14、第一透光区16、第二遮光区26和第二透光区24为平行于所述第一掩膜版10和第二掩膜版20的对称轴的带状图形，所述带状图形的宽度小于或等于5μm。
在本实施例中，所述第一掩膜版10和第二掩膜版20为矩形，所述第一遮光区14、第一透光区16、第二遮光区26和第二透光区24为平行于所述第一掩膜版10和第二掩膜版20的一条边的带状图形，所述带状图形具有相同的形状和尺寸，所述第一遮光区14的位置与所示第二透光区24的位置重合，所述第二遮光区26的位置与所示第一透光区16的位置重合。
本发明提供的掩膜版组合，通过互补设置的遮光区和透光区实现了对OLED显示区的整体蒸镀，通过重叠设置的遮光岛实现了对“地中海”式非显示区的遮挡，从而避免了对显示区进行激光切割。由于遮光区和透光区的宽度不超过5μm，能够基本消除两次图形化形成的图案的高度差，在形成“地中海”式非显示区的同时，避免在显示区形成凹凸不平的蒸镀图案。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (14)

  1. 一种掩膜版组合，其包括第一掩膜版和第二掩膜版，所述第一掩膜版和第二掩膜版具有相同的形状和大小，其中，
    所述第一掩膜版包括多个第一遮光区、多个第一透光区和至少一个第一遮光岛，所述多个第一遮光区和第一透光区彼此平行，且在所述第一掩膜版上间隔分布，所述第一遮光岛覆盖部分所述第一遮光区和第一透光区；所述第一遮光岛的边界不与所述掩膜版的边界相连；
    所述第二掩膜版包括多个第二遮光区、多个第二透光区和至少一个第二遮光岛，所述多个第二遮光区和第二透光区彼此平行，且在所述第二掩膜版上间隔分布，所述第二遮光岛覆盖部分所述第二遮光区和第二透光区；所述第二遮光岛的边界不与所述掩膜版的边界相接触；其中，
    所述第一遮光区和所述第二遮光区互补设置，所述第一透光区和所述第二透光区互补设置；所述第一透光岛和所述第二透光岛具有相同的形状、尺寸和位置，且彼此重叠设置；其中，
    所述第一掩膜版和第二掩膜版为矩形，所述第一遮光区、第一透光区、第二遮光区和第二透光区为平行于所述第一掩膜版和第二掩膜版的一条边的带状图形，所述带状图形具有相同的形状和尺寸，所述第一遮光区的位置与所示第二透光区的位置重合，所述第二遮光区的位置与所示第一透光区的位置重合。
  2. 根据权利要求1所述的掩膜版组合，其中所述第一透光岛和所述第二透光岛的形状包括但不限于圆形、椭圆形、三角形、矩形、多边形、心形。
  3. 根据权利要求2所述的掩膜版组合，其中所述第一掩膜版和第二掩膜版为带状等间距图形，所述第一遮光区、第一透光区、第二遮光区和第二透光区为平行于所述第一掩膜版和第二掩膜版的对称轴的带状图形.
  4. 根据权利要求3所述的掩膜版组合，其中所述带状图形的宽度小于或等于5μm。
  5. 一种掩膜版组合，其包括第一掩膜版和第二掩膜版，所述第一掩膜版和第二掩膜版具有相同的形状和大小，其中，
    所述第一掩膜版包括多个第一遮光区、多个第一透光区和至少一个第一遮光岛，所述多个第一遮光区和第一透光区彼此平行，且在所述第一掩膜版上间隔分布，所述第一遮光岛覆盖部分所述第一遮光区和第一透光区；所述第一遮光岛的边界不与所述掩膜版的边界相连；
    所述第二掩膜版包括多个第二遮光区、多个第二透光区和至少一个第二遮光岛，所述多个第二遮光区和第二透光区彼此平行，且在所述第二掩膜版上间隔分布，所述第二遮光岛覆盖部分所述第二遮光区和第二透光区；所述第二遮光岛的边界不与所述掩膜版的边界相接触；其中，
    所述第一遮光区和所述第二遮光区互补设置，所述第一透光区和所述第二透光区互补设置；所述第一透光岛和所述第二透光岛具有相同的形状、尺寸和位置，且彼此重叠设置。
  6. 根据权利要求5所述的掩膜版组合，其中所述第一透光岛和所述第二透光岛的形状包括但不限于圆形、椭圆形、三角形、矩形、多边形、心形。
  7. 根据权利要求6所述的掩膜版组合，其中所述第一掩膜版和第二掩膜版为带状等间距图形，所述第一遮光区、第一透光区、第二遮光区和第二透光区为平行于所述第一掩膜版和第二掩膜版的对称轴的带状图形.
  8. 根据权利要求7所述的掩膜版组合，其中所述带状图形的宽度小于或等于5μm。
  9. 根据权利要求5所述的掩膜版组合，其中所述第一掩膜版和第二掩膜版为矩形，所述第一遮光区、第一透光区、第二遮光区和第二透光区为平行于所述第一掩膜版和第二掩膜版的一条边的带状图形，所述带状图形具有相同的形状和尺寸，所述第一遮光区的位置与所示第二透光区的位置重合，所述第二遮光区的位置与所示第一透光区的位置重合。
  10. 一种使用掩膜版组合将半导体薄膜图形化的方法，其中所述掩膜版组合包括第一掩膜版和第二掩膜版，所述第一掩膜版和第二掩膜版具有相同的形状和大小；所述方法包括以下步骤：
    将第一掩膜版上的图形转移到所述半导体薄膜上；其中，所述第一掩膜版包括多个第一遮光区、多个第一透光区和至少一个第一遮光岛，所述多个第一遮光区和第一透光区彼此平行，且在所述第一掩膜版上间隔分布，所述第一遮光岛覆盖部分所述第一遮光区和第一透光区；所述第一遮光岛的边界不与所述掩膜版的边界相连；
    将第二掩膜版上的图形转移到所述半导体薄膜上；其中，所述第二掩膜版包括多个第二遮光区、多个第二透光区和至少一个第二遮光岛，所述多个第二遮光区和第二透光区彼此平行，且在所述第二掩膜版上间隔分布，所述第二遮光岛覆盖部分所述第二遮光区和第二透光区；所述第二遮光岛的边界不与所述掩膜版的边界相接触；所述第一遮光区和所述第二遮光区互补设置，所述第一透光区和所述第二透光区互补设置；所述第一透光岛和所述第二透光岛具有相同的形状、尺寸和位置，且彼此重叠设置。
  11. 根据权利要求10所述的使用掩膜版组合将半导体薄膜图形化的方法，其中所述第一透光岛和所述第二透光岛的形状包括但不限于圆形、椭圆形、三角形、矩形、多边形、心形。
  12. 根据权利要求11所述的使用掩膜版组合将半导体薄膜图形化的方法，其中所述第一掩膜版和第二掩膜版为带状等间距图形，所述第一遮光区、第一透光区、第二遮光区和第二透光区为平行于所述第一掩膜版和第二掩膜版的对称轴的带状图形.
  13. 根据权利要求12所述的使用掩膜版组合将半导体薄膜图形化的方法，其中所述带状图形的宽度小于或等于5μm。
  14. 根据权利要求10所述的使用掩膜版组合将半导体薄膜图形化的方法，其中所述第一掩膜版和第二掩膜版为矩形，所述第一遮光区、第一透光区、第二遮光区和第二透光区为平行于所述第一掩膜版和第二掩膜版的一条边的带状图形，所述带状图形具有相同的形状和尺寸，所述第一遮光区的位置与所示第二透光区的位置重合，所述第二遮光区的位置与所示第一透光区的位置重合。
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