WO2020107770A1 - 面光源背光模组及液晶显示面板、led芯片的焊接方法 - Google Patents

面光源背光模组及液晶显示面板、led芯片的焊接方法 Download PDF

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Publication number
WO2020107770A1
WO2020107770A1 PCT/CN2019/082172 CN2019082172W WO2020107770A1 WO 2020107770 A1 WO2020107770 A1 WO 2020107770A1 CN 2019082172 W CN2019082172 W CN 2019082172W WO 2020107770 A1 WO2020107770 A1 WO 2020107770A1
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WIPO (PCT)
Prior art keywords
pad
contact area
light source
led chip
backlight module
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Ceased
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PCT/CN2019/082172
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English (en)
French (fr)
Inventor
杨勇
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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Application filed by Wuhan China Star Optoelectronics Technology Co Ltd filed Critical Wuhan China Star Optoelectronics Technology Co Ltd
Priority to US16/604,270 priority Critical patent/US11187940B2/en
Publication of WO2020107770A1 publication Critical patent/WO2020107770A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133603—Direct backlight with LEDs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133612—Electrical details
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13452—Conductors connecting driver circuitry and terminals of panels
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13458—Terminal pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Definitions

  • the present application relates to the technical field of displays, and in particular, to a surface light source backlight module, a liquid crystal display panel, and an LED chip welding method.
  • the Mini-LED surface light source is currently a hot topic in the market.
  • the surface light source uses a smaller LED chip and the light shape is more diffused, resulting in lower luminous efficiency.
  • the design of the substrate plate in the solid crystal process is also opposite Light uniformity has a greater impact.
  • the flip chip needs to connect the chip pad and the substrate pad with solder paste.
  • the process step of reflow soldering in solder paste solid crystal is easy to cause the chip to be pulled and lead to tilt, resulting in the change of the chip light angle, causing The problem of uneven light mixing in local or large areas. In response to this phenomenon, people try to compensate by increasing the light-emitting angle of the chip, but this method will cause a reduction in light efficiency.
  • This application provides a surface light source backlight module, a liquid crystal display panel, and an LED chip welding method, which can prevent the LED chip from being pulled and tilted by solder paste during solid crystal reflow soldering, and ensure the stability and uniformity of the LED chip solid crystal , Thereby improving the uniformity of light mixing of the surface light source backlight module.
  • This application provides a surface light source backlight module for a liquid crystal display panel, including:
  • the first pad is prepared on the substrate
  • a second pad disposed on the substrate at a distance from the first pad
  • Pad vias are provided on the first pad and the second pad respectively;
  • the magnetic film layer is provided in the pad via hole corresponding to the pad via hole;
  • Solder paste prepared on the first pad and the second pad
  • LED chips with pins provided at both ends of the LED chip, the pins corresponding to the magnetic film layer and soldered to the first pad and the second pad respectively through the solder paste;
  • the magnetic film layer is used to attract the pin to fix the LED chip.
  • a first contact area is provided on the first pad
  • a second contact area is provided on the second pad
  • the pins on both ends of the LED chip are respectively Electrically connected to the first contact area and the second contact area.
  • the pad via is located in the first contact area and the second contact area.
  • the size of the pad via hole is 20% to 80% of the area of the area corresponding to the pin.
  • the shape of the pad via hole is the same as the shape of the region corresponding to the pin.
  • the height of the magnetic film layer is equal to the depth of the pad via hole.
  • the surface light source backlight module of the present application further includes a white oil layer, the white oil layer is prepared on the substrate and the first pad and the second pad, and is provided to expose the LED chip Window area.
  • the present application also provides a liquid crystal display panel including the above surface light source backlight module.
  • the present application also provides a method for welding LED chips.
  • the LED chips are used in a surface light source backlight module.
  • the method includes the following steps:
  • a substrate has a first pad and a second pad spaced apart, the first pad is provided with a first contact area, and the second pad is provided with a second contact area, respectively, through an etching process Forming pad vias in the first contact area and the second contact area;
  • Step S20 filling a magnetic material into the pad via to form a magnetic film layer
  • Step S30 forming solder paste in the first contact area and the second contact area respectively;
  • Step S40 Solder the pins on both ends of the LED chip to the first contact area and the second contact area, respectively, wherein the magnetic film layer is used to attract the pins to fix the LED chip.
  • the size of the pad via is 20% to 80% of the area of the area corresponding to the pin, and the height of the magnetic film layer is equal to the depth of the pad via.
  • the beneficial effects of the present application are: compared with the existing method of welding LED chips of the surface light source backlight module, the welding method of the surface light source backlight module, the liquid crystal display panel and the LED chip provided by the present application pass through the first pad Etching the pad via hole on the second pad and filling the pad via hole with magnetic material, which is used to attract and fix the pins of the LED chip, thereby preventing the LED chip from being pulled and tilted by solder paste during solid crystal reflow. Ensure the stability and uniformity of the LED chip solid crystal, thereby improving the uniformity of light mixing of the surface light source backlight module.
  • FIG. 1 is a schematic cross-sectional view of a surface light source backlight module provided by an embodiment of the present application
  • FIG. 2 is a top view of a surface light source backlight module provided by an embodiment of the present application.
  • FIG. 3 is a flow chart of a method for welding LED chips provided by an embodiment of the present application.
  • 4A to 4E are schematic diagrams of LED chip welding provided by embodiments of the present application.
  • This application is directed to the existing surface light source backlight module.
  • solder paste solid crystal When reflow soldering in solder paste solid crystal, it is easy to cause the LED chip to be pulled and tilted, which causes the LED chip to change the light emitting angle, causing local or large area uneven light mixing Technical problems, this embodiment can solve this defect.
  • FIG. 1 it is a schematic cross-sectional view of a surface light source backlight module provided by an embodiment of the present application.
  • the surface light source backlight module is applied to a liquid crystal display panel, and includes: a substrate 10, which can be used as a flexible circuit board or a printed circuit board in the surface light source backlight module; pad 11, the distribution of the array On the substrate 10, the pad 11 includes at least a first pad 111 and a second pad 112 that are spaced apart; pad vias 12 are provided on the first pad 111 and the second pad, respectively On the pad 112, the pad via 12 may penetrate part or all of the pad 11; the magnetic film layer 13 is provided in the pad via 12 corresponding to the pad via 12; preferably, The height of the magnetic film layer 13 is equal to the depth of the pad via 12, that is, the magnetic film layer 13 fills the pad via 12, and the magnetic film layer 13 is made of magnetic material; tin
  • the paste 14 is prepared on the first pad 111 and the second pad 112; the LED chip 15 is provided with pins
  • the LED chip 15 can be prevented from being pulled and tilted by the solder paste 14 during solid crystal reflow soldering, which can ensure the stability and uniformity of the LED chip 15 solid crystal, thereby improving the surface light source backlight module Uniformity of light mixing.
  • the size of the pad via 12 is 20% to 80% of the area of the area corresponding to the pin 151.
  • the size of the pad via 12 is 60% to 80% of the area of the corresponding area of the pin 151.
  • the shape of the pad via 12 is the same as the shape of the corresponding area of the pin 151.
  • the substrate 10 is a supporting substrate of the surface light source backlight module, generally made of polyimide film (Polyimide Film, PI), the thickness is usually 0.1 mm -0.12mm (including white oil), copper wire (not marked) and the structure of the pad 11 are attached to the substrate 10, the thickness of the copper wire is between 10 ⁇ m -15 ⁇ m
  • the thickness of the solder paste 14 on the disc 11 is between 5 ⁇ m and 8 ⁇ m.
  • the LED chip 15 has a full-surface encapsulated fluorescent film (not shown), the fluorescent film is attached to the LED chip 15 and the substrate 10 by hot pressing, and has a thickness of 200 ⁇ m-300 ⁇ m.
  • a first pad 111 and a second pad 112 are carried on the substrate 10, and a white oil layer (not shown) is prepared on the substrate 10 and the first pad 111 and the second pad 112, and The white oil layer is provided with a window area 16 exposing the LED chip 15.
  • a first contact area 111a is provided on the first pad 111, a second contact area 112a is provided on the second pad 112, and the pins on both ends of the LED chip 15 are in contact with the first The area 111a and the second contact area 112a are electrically connected.
  • the pad via is located in the first contact area 111a and the second contact area 112a.
  • the area of the area corresponding to the pin is equal to the area of the first contact area 111a or the second contact area 112a.
  • the pad via hole is filled with a magnetic film layer 13, which can generate magnetic attraction to the pin of the LED chip 15.
  • the size of the LED chip 15 is 100 ⁇ m-500 ⁇ m, the pins of the LED chip 15 are made of nickel-gold alloy, and the nickel metal composition accounts for 50%-80%; the thickness of the pins is thickened to be 10 ⁇ m -20 ⁇ m, which is about 80% higher than the pins of conventional LED chips.
  • the present application intends to fill the magnetic film layer 13 on the pad 11 and make the lead of the LED chip 15 fall on the magnetic film layer 13 of the pad 11 during the crystal bonding operation To ensure that the LED chip 15 is well adsorbed and fixed, so as not to be pulled and tilted by the solder paste during reflow soldering, and improve the uniformity of light mixing of the surface light source.
  • the present application also provides a liquid crystal display panel including the above surface light source backlight module.
  • the present application also provides a method for welding LED chips.
  • the LED chips are used in a surface light source backlight module. As shown in FIG. 3, the method includes the following steps:
  • a substrate has a first pad and a second pad spaced apart, the first pad is provided with a first contact area, and the second pad is provided with a second contact area, respectively, through an etching process Pad vias are formed in the first contact area and the second contact area.
  • the substrate 10 is provided with a pad 11, and the pad 11 includes at least a first pad 111 and a second pad 112 that are arranged at intervals.
  • a pad via hole 12 having a specific size and shape is prepared by a wet etching process, and the size and shape of the pad via 12 are based on the pins of the LED chip of the solid crystal Size depends on appearance.
  • Step S20 filling a magnetic material into the pad via to form a magnetic film layer.
  • a magnetic material is filled into the pad via hole 12 by spraying or brushing to form a magnetic film layer 13; in one embodiment, the height of the magnetic film layer 13 is equal to the The depth of the pad via 12 is equal.
  • Step S30 forming solder paste in the first contact area and the second contact area, respectively.
  • a solder paste 14 is formed on the first pad 111 and the second pad 112, and the solder paste 14 covers at least the first contact area and the second contact area.
  • Step S40 Solder the pins on both ends of the LED chip to the first contact area and the second contact area, respectively, wherein the magnetic film layer is used to attract the pins to fix the LED chip.
  • a die bonding operation is performed, and the pins 151 at both ends of the LED chip 15 are respectively connected to the first contact area of the first pad 111 and the second pad 112 through the solder paste 14 Of the second contact area. Due to the arrangement of the magnetic film layer 13, when the pin 151 of the LED chip 15 falls above the pad 11, a magnetic force acts between the pin 151 and the magnetic film layer 13 Mutual adsorption to prevent the tilt short circuit phenomenon of the LED chip 15 during the subsequent reflow soldering operation.
  • the size of the pad via 12 is 20% to 80% of the area of the area corresponding to the pin 151, the height of the magnetic film layer 13 and the depth of the pad via 12 equal.
  • the surface light source backlight module, the liquid crystal display panel, and the LED chip welding method provided by the present application by etching the pad via hole on the first pad and the second pad, and filling the pad via hole with a magnetic material, In order to fix and fix the pins of the LED chip, so as to prevent the LED chip from being pulled and tilted by solder paste during reflow soldering, to ensure the stability and uniformity of the LED chip solid crystal, thereby improving the light mixing of the surface light source backlight module Uniformity.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Planar Illumination Modules (AREA)
  • Liquid Crystal (AREA)

Abstract

本申请提供一种面光源背光模组及液晶显示面板、LED芯片的焊接方法，面光源背光模组包括：位于基板上的第一焊盘与第二焊盘；第一焊盘与第二焊盘上设有焊盘过孔；磁性膜层，设于焊盘过孔内；锡膏，制备于第一焊盘与第二焊盘上；LED芯片，两端设有引脚，引脚吸附固定于磁性膜层上，并通过锡膏分别与第一焊盘和第二焊盘焊接。

Description

面光源背光模组及液晶显示面板、LED芯片的焊接方法 技术领域
本申请涉及显示器技术领域，尤其涉及一种面光源背光模组及液晶显示面板、LED芯片的焊接方法。
 背景技术
Mini-LED面光源目前是市面上开发的热点课题，然而面光源由于使用的LED芯片较小，光形较为扩散而导致其发光效率较低，同时固晶过程中基板板材的设计也对面光源的出光均匀性产生较大的影响。固晶作业中倒装芯片需要通过锡膏将芯片焊盘和基板焊盘连通导电，锡膏固晶中回流焊的工艺步骤容易引起芯片的拉扯而导致倾斜，从而造成芯片发光角度的改变，引起局部或者大面积的混光不均问题。针对这一现象，人们尝试通过增大芯片的发光角度进行弥补，但此种方式会造成光效的降低。
因此，现有技术存在缺陷，急需改进。
 技术问题
本申请提供一种面光源背光模组及液晶显示面板、LED芯片的焊接方法，能够防止LED芯片在固晶回流焊时被锡膏拉扯倾斜，保证LED芯片固晶的稳定性和排列的均一性，从而改善面光源背光模组的混光均匀性。
 技术解决方案
为解决上述问题，本申请提供的技术方案如下：
本申请提供一种面光源背光模组，用于液晶显示面板，包括：
基板；
第一焊盘，制备于所述基板上；
第二焊盘，与所述第一焊盘间隔的设置于所述基板上；
焊盘过孔，分别设置于所述第一焊盘以及所述第二焊盘上；
磁性膜层，对应所述焊盘过孔设置于所述焊盘过孔内；
锡膏，制备于所述第一焊盘以及所述第二焊盘上；
LED芯片，所述LED芯片的两端设置有引脚，所述引脚对应所述磁性膜层并通过所述锡膏分别与所述第一焊盘和所述第二焊盘焊接；
其中，所述磁性膜层用于吸附所述引脚以固定所述LED芯片。
在本申请的面光源背光模组中，所述第一焊盘上设置有第一接触区，所述第二焊盘上设置有第二接触区，所述LED芯片两端的所述引脚分别与所述第一接触区和所述第二接触区电连接。
在本申请的面光源背光模组中，所述焊盘过孔位于所述第一接触区以及所述第二接触区内。
在本申请的面光源背光模组中，所述焊盘过孔的尺寸为所述引脚对应区域面积的20%~80%。
在本申请的面光源背光模组中，所述焊盘过孔的形状与所述引脚对应区域的形状相同。
在本申请的面光源背光模组中，所述磁性膜层的高度与所述焊盘过孔的深度相等。
在本申请的面光源背光模组中，还包括白油层，所述白油层制备于所述基板以及所述第一焊盘与所述第二焊盘上，且设置有露出所述LED芯片的开窗区。
本申请还提供一种包括上述面光源背光模组的液晶显示面板。
本申请还提供一种LED芯片的焊接方法，所述LED芯片用于面光源背光模组，所述方法包括以下步骤：
步骤S10，一基板上有间隔设置的第一焊盘与第二焊盘，所述第一焊盘设有第一接触区，所述第二焊盘设有第二接触区，通过蚀刻工艺分别在所述第一接触区和所述第二接触区内形成焊盘过孔；
步骤S20，将磁性材料填充至所述焊盘过孔内形成磁性膜层；
步骤S30，分别在所述第一接触区和所述第二接触区形成锡膏；
步骤S40，将所述LED芯片两端的引脚分别与所述第一接触区和所述第二接触区焊接，其中，所述磁性膜层用于吸附所述引脚以固定所述LED芯片。
在本申请的焊接方法中，所述焊盘过孔的尺寸为所述引脚对应区域面积的20%~80%，所述磁性膜层的高度与所述焊盘过孔的深度相等。
 有益效果
本申请的有益效果为：相较于现有面光源背光模组的LED芯片的焊接方法，本申请提供的面光源背光模组及液晶显示面板、LED芯片的焊接方法，通过在第一焊盘与第二焊盘上蚀刻焊盘过孔，并在焊盘过孔中填充磁性材料，用于将LED芯片的引脚吸附固定，从而防止LED芯片在固晶回流焊时被锡膏拉扯倾斜，保证LED芯片固晶的稳定性和排列的均一性，从而改善面光源背光模组的混光均匀性。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请实施例提供的面光源背光模组剖面示意图；
图2为本申请实施例提供的面光源背光模组俯视图；
图3为本申请实施例提供的LED芯片的焊接方法流程图；
图4A~4E为本申请实施例提供的LED芯片的焊接示意图。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。
本申请针对现有面光源背光模组，在锡膏固晶中回流焊时容易引起LED芯片的拉扯而导致倾斜，从而造成LED芯片发光角度的改变，引起局部或者大面积的混光不均的技术问题，本实施例能够解决该缺陷。
如图1所示，为本申请实施例提供的面光源背光模组剖面示意图。该面光源背光模组应用于液晶显示面板，其包括：基板10，所述基板10可以用作所述面光源背光模组中的柔性电路板或印刷电路板中；焊盘11，阵列的分布于所述基板10上，所述焊盘11至少包括间隔设置的第一焊盘111和第二焊盘112；焊盘过孔12，分别设置于所述第一焊盘111以及所述第二焊盘112上，所述焊盘过孔12可以贯穿部分或全部所述焊盘11；磁性膜层13，对应所述焊盘过孔12设置于所述焊盘过孔12内；优选的，所述磁性膜层13的高度与所述焊盘过孔12的深度相等，即所述磁性膜层13填满所述焊盘过孔12，所述磁性膜层13选用磁性材料制成；锡膏14，制备于所述第一焊盘111以及所述第二焊盘112上；LED芯片15，所述LED芯片15的两端设置有引脚151，所述引脚151对应所述磁性膜层13并通过所述锡膏14分别与所述第一焊盘111和所述第二焊盘112焊接；由于所述磁性膜层13可以吸附所述引脚151，从而可以固定所述LED芯片15，因此可以防止在固晶回流焊时所述LED芯片15被所述锡膏14拉扯倾斜，能够保证所述LED芯片15固晶的稳定性和排列的均一性，从而改善面光源背光模组的混光均匀性。
所述焊盘过孔12的尺寸为所述引脚151对应区域面积的20%~80%。优选的，所述焊盘过孔12的尺寸为所述引脚151对应区域面积的60%~80%。
在一种实施例中，所述焊盘过孔12的形状与所述引脚151对应区域的形状相同。
所述基板10为所述面光源背光模组的支撑衬底，一般由聚酰亚胺薄膜(Polyimide Film，PI)构成，其厚度通常为0.1 mm -0.12mm（含白油），所述基板10上附着有铜线（未标示）及所述焊盘11结构，所述铜线的厚度为10μm -15μm之间，实际工艺中所述焊盘11上的所述锡膏14的厚度为5μm -8μm之间。所述LED芯片15上方有整面封装的荧光膜（未标示），所述荧光膜通过热压的方式附着在所述LED芯片15及所述基板10的上方，厚度为200μm -300μm。
结合图2所示，为本申请实施例提供的面光源背光模组俯视图。所述基板10上承载有第一焊盘111和第二焊盘112，白油层（未标示）制备于所述基板10以及所述第一焊盘111与所述第二焊盘112上，且所述白油层设置有露出所述LED芯片15的开窗区16。所述第一焊盘111上设置有第一接触区111a，所述第二焊盘112上设置有第二接触区112a，所述LED芯片15两端的所述引脚分别与所述第一接触区111a和所述第二接触区112a电连接。所述焊盘过孔位于所述第一接触区111a以及所述第二接触区112a内。
在一种实施例中，所述引脚所对应的区域的面积等于所述第一接触区111a或所述第二接触区112a的面积。
在所述焊盘过孔中填充有磁性膜层13，可以对所述LED芯片15的所述引脚产生磁力吸附。所述LED芯片15的大小为100μm -500μm，所述LED芯片15的所述引脚采用镍金合金，镍金属成分占到50%-80%；所述引脚的厚度进行加厚处理，为10μm -20μm，较常规LED芯片的引脚高出80%左右。
本申请拟在所述焊盘11上填充所述磁性膜层13，并在固晶作业中使所述LED芯片15的所述引脚落于所述焊盘11的所述磁性膜层13上，保证所述LED芯片15被较好地吸附固定，不致回流焊时被所述锡膏拉扯而倾斜，改善面光源混光均匀性。
本申请还提供一种包括上述面光源背光模组的液晶显示面板。
本申请还提供一种LED芯片的焊接方法，所述LED芯片用于面光源背光模组，如图3所示，所述方法包括以下步骤：
步骤S10，一基板上有间隔设置的第一焊盘与第二焊盘，所述第一焊盘设有第一接触区，所述第二焊盘设有第二接触区，通过蚀刻工艺分别在所述第一接触区和所述第二接触区内形成焊盘过孔。
结合图4A~4B所示，基板10上设置有焊盘11，所述焊盘11至少包括间隔设置的第一焊盘111与第二焊盘112。对所述基板10的所述焊盘11通过湿蚀刻工艺制备具有特定尺寸形貌的焊盘过孔12，所述焊盘过孔12的尺寸形貌依据固晶的所述LED芯片的引脚尺寸形貌而定。
步骤S20，将磁性材料填充至所述焊盘过孔内形成磁性膜层。
结合图4C所示，将磁性材料通过喷涂或者刷涂的方式填充至所述焊盘过孔12内形成磁性膜层13；在一种实施例中，所述磁性膜层13的高度与所述焊盘过孔12的深度相等。
步骤S30，分别在所述第一接触区和所述第二接触区形成锡膏。
结合图4D所示，在所述第一焊盘111和所述第二焊盘112上形成锡膏14，所述锡膏14至少覆盖所述第一接触区和所述第二接触区。
步骤S40，将所述LED芯片两端的引脚分别与所述第一接触区和所述第二接触区焊接，其中，所述磁性膜层用于吸附所述引脚以固定所述LED芯片。
结合图4E所示，进行固晶作业，将LED芯片15两端的引脚151通过所述锡膏14分别与所述第一焊盘111的所述第一接触区和所述第二焊盘112的所述第二接触区焊接。由于所述磁性膜层13的设置，在所述LED芯片15的所述引脚151落于所述焊盘11上方时，使所述引脚151和所述磁性膜层13之间通过磁力作用相互吸附，防止后续回流焊作业过程中所述LED芯片15的倾斜短路现象。
在一种实施例中，所述焊盘过孔12的尺寸为所述引脚151对应区域面积的20%~80%，所述磁性膜层13的高度与所述焊盘过孔12的深度相等。
本申请提供的面光源背光模组及液晶显示面板、LED芯片的焊接方法，通过在第一焊盘与第二焊盘上蚀刻焊盘过孔，并在焊盘过孔中填充磁性材料，用于将LED芯片的引脚吸附固定，从而防止LED芯片在固晶回流焊时被锡膏拉扯倾斜，保证LED芯片固晶的稳定性和排列的均一性，从而改善面光源背光模组的混光均匀性。
综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。

Claims (10)

  1. 一种面光源背光模组，用于液晶显示面板，其包括：
    基板；
    第一焊盘，制备于所述基板上；
    第二焊盘，与所述第一焊盘间隔的设置于所述基板上；
    焊盘过孔，分别设置于所述第一焊盘以及所述第二焊盘上；
    磁性膜层，对应所述焊盘过孔设置于所述焊盘过孔内；
    锡膏，制备于所述第一焊盘以及所述第二焊盘上；
    LED芯片，所述LED芯片的两端设置有引脚，所述引脚对应所述磁性膜层并通过所述锡膏分别与所述第一焊盘和所述第二焊盘焊接；
    其中，所述磁性膜层用于吸附所述引脚以固定所述LED芯片。
  2. 根据权利要求1所述的面光源背光模组，其中，所述第一焊盘上设置有第一接触区，所述第二焊盘上设置有第二接触区，所述LED芯片两端的所述引脚分别与所述第一接触区和所述第二接触区电连接。
  3. 根据权利要求2所述的面光源背光模组，其中，所述焊盘过孔位于所述第一接触区以及所述第二接触区内。
  4. 根据权利要求3所述的面光源背光模组，其中，所述焊盘过孔的尺寸为所述引脚对应区域面积的20%~80%。
  5. 根据权利要求1所述的面光源背光模组，其中，所述焊盘过孔的形状与所述引脚对应区域的形状相同。
  6. 根据权利要求1所述的面光源背光模组，其中，所述磁性膜层的高度与所述焊盘过孔的深度相等。
  7. 根据权利要求1所述的面光源背光模组，其中，还包括白油层，所述白油层制备于所述基板以及所述第一焊盘与所述第二焊盘上，且设置有露出所述LED芯片的开窗区。
  8. 一种包括权利要求1所述的面光源背光模组的液晶显示面板。
  9. 一种LED芯片的焊接方法，所述LED芯片用于面光源背光模组，其中，所述方法包括以下步骤：
    步骤S10，一基板上有间隔设置的第一焊盘与第二焊盘，所述第一焊盘设有第一接触区，所述第二焊盘设有第二接触区，通过蚀刻工艺分别在所述第一接触区和所述第二接触区内形成焊盘过孔；
    步骤S20，将磁性材料填充至所述焊盘过孔内形成磁性膜层；
    步骤S30，分别在所述第一接触区和所述第二接触区形成锡膏；
    步骤S40，将所述LED芯片两端的引脚分别与所述第一接触区和所述第二接触区焊接，其中，所述磁性膜层用于吸附所述引脚以固定所述LED芯片。
  10. 根据权利要求9所述的焊接方法，其中，所述焊盘过孔的尺寸为所述引脚对应区域面积的20%~80%，所述磁性膜层的高度与所述焊盘过孔的深度相等。
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