WO2020090185A1 - 表示装置 - Google Patents

表示装置 Download PDF

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Publication number
WO2020090185A1
WO2020090185A1 PCT/JP2019/031662 JP2019031662W WO2020090185A1 WO 2020090185 A1 WO2020090185 A1 WO 2020090185A1 JP 2019031662 W JP2019031662 W JP 2019031662W WO 2020090185 A1 WO2020090185 A1 WO 2020090185A1
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WO
WIPO (PCT)
Prior art keywords
light emitting
emitting element
gradation value
pixel
green light
Prior art date
Application number
PCT/JP2019/031662
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English (en)
French (fr)
Japanese (ja)
Inventor
池田　雅延
優次 前出
金谷　康弘
Original Assignee
株式会社ジャパンディスプレイ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社ジャパンディスプレイ filed Critical 株式会社ジャパンディスプレイ
Publication of WO2020090185A1 publication Critical patent/WO2020090185A1/ja
Priority to US17/244,477 priority Critical patent/US11362078B2/en

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    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/302—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements characterised by the form or geometrical disposition of the individual elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
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    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/2003—Display of colours
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    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
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    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
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    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • G09G2300/0852—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor being a dynamic memory with more than one capacitor
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • G09G2300/0861—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor with additional control of the display period without amending the charge stored in a pixel memory, e.g. by means of additional select electrodes
    • G09G2300/0866—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor with additional control of the display period without amending the charge stored in a pixel memory, e.g. by means of additional select electrodes by means of changes in the pixel supply voltage
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2360/00—Aspects of the architecture of display systems
    • G09G2360/16—Calculation or use of calculated indices related to luminance levels in display data
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
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    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10H20/8252—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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Definitions

  • the present invention relates to a display device.
  • a display device using an inorganic light emitting diode (micro LED) as a display element is known.
  • micro LED inorganic light emitting diode
  • different types of LEDs are used for each color to be displayed.
  • the red LED described in Patent Document 1 has a multiple quantum well structure of gallium nitride (GaN) applied as a light emitting layer.
  • GaN gallium nitride
  • a material obtained by adding europium (Eu) to gallium nitride (GaN) is used as a light emitting layer.
  • the red LED of Patent Document 1 has lower luminous efficiency than the blue LED and the green LED. Therefore, it is necessary to increase the driving current of the red LED, which may increase power consumption. Further, in the red LED of Patent Document 2, the half-width of the light spectrum is smaller than the half-width of the light spectrum of the blue LED or the green LED. For this reason, only the red color is displayed vividly, which may make it difficult to display an image well.
  • An object of the present invention is to provide a display device capable of displaying an image well.
  • a display device of one embodiment of the present invention includes a substrate, a plurality of pixels provided on the substrate, a plurality of red light emitting elements and a plurality of first green light emitting elements provided in each of the plurality of pixels. Then, the first green light emitting element is turned on at the same time as the red light emitting element, the light emission intensity of the first green light emitting element is smaller than the light emission intensity of the red light emitting element, and The full width at half maximum of the spectrum of light is larger than the full width at half maximum of the spectrum of light of the red light emitting element.
  • FIG. 1 is a plan view schematically showing the display device according to the embodiment.
  • FIG. 2 is a plan view showing a plurality of pixels.
  • FIG. 3 is a circuit diagram showing a pixel circuit.
  • FIG. 4 is an enlarged plan view showing two pixels of the display device according to the embodiment.
  • FIG. 5 is a sectional view taken along the line VV ′ of FIG.
  • FIG. 6 is a sectional view taken along line VI-VI ′ of FIG.
  • FIG. 7 is a cross-sectional view showing the red light emitting element according to the embodiment.
  • FIG. 8 is a graph schematically showing the relationship between the emission intensity and the wavelength of the red light emitting element and the first green light emitting element.
  • FIG. 9 is a block diagram schematically showing the configuration of the signal processing circuit.
  • FIG. 9 is a block diagram schematically showing the configuration of the signal processing circuit.
  • FIG. 10 is an explanatory diagram for explaining the relationship between the input gradation value and the driven light emitting element.
  • FIG. 11 is a flowchart for explaining a method of setting the output gradation value of each light emitting element according to the first modification.
  • FIG. 12 is a block diagram schematically showing the configuration of the signal processing circuit according to the second modification.
  • FIG. 13 is a flowchart for explaining a method of setting the output gradation value of each light emitting element according to the second modification.
  • FIG. 14 is a flowchart for explaining a method of setting the output gradation value of each light emitting element according to the third modification.
  • FIG. 15A is a plan view showing a first arrangement pattern of each light emitting element in one pixel group according to the fourth modification.
  • FIG. 15A is a plan view showing a first arrangement pattern of each light emitting element in one pixel group according to the fourth modification.
  • FIG. 15B is a plan view showing a second arrangement pattern of each light emitting element in one pixel group.
  • FIG. 15C is a plan view showing a third arrangement pattern of each light emitting element in one pixel group.
  • FIG. 16A is a plan view showing a fourth arrangement pattern of light emitting elements in two pixel groups according to the fifth modification.
  • FIG. 16B is a plan view showing a fifth arrangement pattern of each light emitting element in two pixel groups.
  • FIG. 16C is a plan view showing a sixth arrangement pattern of each light emitting element in two pixel groups.
  • FIG. 17 is a sectional view showing a red light emitting element according to the sixth modification.
  • FIG. 18 is a sectional view showing a red light emitting element according to the seventh modification.
  • FIG. 19 is a sectional view showing a red light emitting element according to the eighth modification.
  • FIG. 20 is a sectional view showing a red light emitting element according to the ninth modification.
  • FIG. 21 is a sectional view showing a red light emitting element according to the tenth modification.
  • FIG. 1 is a plan view schematically showing the display device according to the embodiment.
  • the display device 1 includes an array substrate 2, pixels Pix (pixel group), a drive circuit 12, a drive IC (Integrated Circuit) 210, and a cathode wiring 60.
  • the array substrate 2 is a drive circuit substrate for driving each pixel Pix, and is also called a backplane or an active matrix substrate.
  • the array substrate 2 has a substrate 21, a plurality of transistors, a plurality of capacitors, various wirings, and the like.
  • the display device 1 has a display area AA and a peripheral area GA.
  • the display area AA is an area that is arranged so as to overlap the plurality of pixels Pix and displays an image.
  • the peripheral area GA is an area that does not overlap the plurality of pixels Pix, and is arranged outside the display area AA.
  • the plurality of pixels Pix are arranged in the first direction Dx and the second direction Dy in the display area AA.
  • the first direction Dx and the second direction Dy are parallel to the surface of the substrate 21.
  • the first direction Dx is orthogonal to the second direction Dy.
  • the first direction Dx may intersect with the second direction Dy instead of being orthogonal to each other.
  • the third direction Dz is a direction orthogonal to the first direction Dx and the second direction Dy.
  • the third direction Dz corresponds to the normal line direction of the substrate 21, for example. Note that, hereinafter, the plan view refers to a positional relationship when viewed from the third direction Dz.
  • the drive circuit 12 operates based on various control signals from the drive IC 210 to generate a plurality of gate lines (for example, reset control signal line L5, output control signal line L6, pixel control signal line L7, initialization control signal line L8 (see FIG. 3). )) Is a circuit for driving.
  • the drive circuit 12 sequentially or simultaneously selects a plurality of gate lines and supplies a gate drive signal (for example, a pixel control signal SG) to the selected gate lines. As a result, the drive circuit 12 selects the plurality of pixels Pix connected to the gate line.
  • the drive IC 210 is a circuit that controls the display of the display device 1.
  • the drive IC 210 is mounted as a COG (Chip On Glass) in the peripheral area GA of the substrate 21.
  • the drive IC 210 is not limited to this, and may be mounted as a COF (Chip On Film) on the wiring board connected to the peripheral area GA of the board 21.
  • the wiring board is, for example, a flexible printed board or a rigid board.
  • the cathode wiring 60 is provided in the peripheral area GA of the substrate 21.
  • the cathode wiring 60 is provided so as to surround the plurality of pixels Pix in the display area AA and the drive circuit 12 in the peripheral area GA.
  • the cathode wiring 60 is arranged between the peripheral circuit formed on the substrate 10 and the outer edge of the substrate 21.
  • the cathodes (cathode terminals 22t (see FIG. 5)) of the plurality of light emitting elements 3 are connected to a common cathode wiring 60 and are supplied with a fixed potential (eg, ground potential). More specifically, the cathode terminal 22t (see FIG. 5) of the light emitting element 3 is connected to the cathode wiring 60 via the cathode electrode 22.
  • the cathode wiring 60 is not limited to one wiring continuously formed along the three sides of the substrate 10, but may be two partial wirings having slits on any side on the substrate 21. It suffices that the wiring is arranged along at least one side of the substrate 21.
  • FIG. 2 is a plan view showing a plurality of pixels.
  • one pixel Pix includes a plurality of pixels 49.
  • the pixel Pix has a first pixel 49R, a second pixel 49Ga, a third pixel 49Gb, and a fourth pixel 49B.
  • the first pixel 49R displays the primary color red as the first color.
  • the second pixel 49Ga displays the primary green color of the primary color as the second color.
  • the third pixel 49Gb displays the primary color second green as the second color.
  • the fourth pixel 49B displays the primary color blue as the third color.
  • Both the first green color and the second green color are green lights, but at least one of the emission intensity and the maximum emission wavelength of the light spectrum is different.
  • the first pixel 49R and the second pixel 49Ga are arranged in the second direction Dy.
  • the first pixel 49R and the fourth pixel 49B are arranged in the first direction Dx.
  • the second pixel 49Ga and the third pixel 49Gb are arranged in the first direction Dx.
  • the third pixel 49Gb and the fourth pixel 49B are arranged in the second direction Dy.
  • the first color, the second color, and the third color are not limited to red, green, and blue, respectively, and any color such as a complementary color can be selected.
  • the pixel 49 is referred to as a pixel 49.
  • Each pixel 49 has a light emitting element 3 and an anode electrode 23.
  • the first pixel 49R, the second pixel 49Ga, the third pixel 49Gb, and the fourth pixel 49B respectively include a red light emitting element 3R, a first green light emitting element 3Ga, a second green light emitting element 3Gb, and a blue light emitting element.
  • the red light emitting element 3R and the first green light emitting element 3Ga are arranged in the second direction Dy.
  • the red light emitting element 3R and the blue light emitting element 3B are arranged in the first direction Dx.
  • the first green light emitting element 3Ga and the second green light emitting element 3Gb are arranged in the first direction Dx.
  • the second green light emitting element 3Gb and the blue light emitting element 3B are arranged in the second direction Dy.
  • the red light emitting element 3R emits red light.
  • the first green light emitting element 3Ga emits the first green light.
  • the second green light emitting element 3Gb emits the second green light.
  • the blue light emitting element 3B emits blue light.
  • the red light emitting element 3R, the first green light emitting element 3Ga, the second green light emitting element 3Gb, and the blue light emitting element 3B are referred to as light emitting element 3 when it is not necessary to distinguish them.
  • the light emitting element 3 is an inorganic light emitting diode (LED) chip having a size of 3 ⁇ m or more and 300 ⁇ m or less in a plan view, and is called a micro LED (micro LED) or a mini LED (mini LED).
  • the display device 1 including a micro LED in each pixel is also called a micro LED display device. It should be noted that the micro of the micro LED does not limit the size of the light emitting element 3.
  • the plurality of light emitting elements 3 may emit different lights of four colors or more.
  • the first color, the second color, and the third color are not limited to red, green, and blue, respectively, and any color such as a complementary color can be selected.
  • the number of pixels 49 arranged in one pixel Pix is not limited to 4, and may be 5 or more, and 5 or more pixels 49 may be associated with different colors.
  • the arrangement of the pixels 49 is not limited to this, and the first pixel 49R, the second pixel 49Ga, the third pixel 49Gb, and the fourth pixel 49B are arranged in one of the first direction Dx and the second direction Dy. It may be arranged.
  • FIG. 3 is a circuit diagram showing a pixel circuit.
  • FIG. 3 shows the pixel circuit PICA provided in one pixel 49, and the pixel circuit PICA is provided in each of the plurality of pixels 49.
  • the pixel circuit PICA includes the light emitting element 3, five transistors, and two capacitors.
  • the pixel circuit PICA includes a drive transistor DRT, an output transistor BCT, an initialization transistor IST, a pixel selection transistor SST, and a reset transistor RST.
  • the drive transistor DRT, the output transistor BCT, the initialization transistor IST, the pixel selection transistor SST, and the reset transistor RST are each composed of an n-type TFT (Thin Film Transistor).
  • the pixel circuit PICA includes a first capacitor Cs1 and a second capacitor Cs2.
  • the cathode (cathode terminal 22t) of the light emitting element 3 is connected to the cathode power supply line L10.
  • the anode (anode terminal 23t) of the light emitting element 3 is connected to the anode power supply line L1 via the drive transistor DRT and the output transistor BCT.
  • the anode power supply potential PVDD is supplied to the anode power supply line L1.
  • a cathode power supply potential PVSS corresponding to the cathode wiring 60 and the cathode electrode 22 is supplied to the cathode power supply line L10.
  • the anode power supply potential PVDD is higher than the cathode power supply potential PVSS.
  • the anode power supply line L1 supplies the pixel 49 with an anode power supply potential PVDD which is a drive potential.
  • the light emitting element 3 ideally supplies a forward current (driving current) by the potential difference (PVDD-PVSS) between the anode power supply potential PVDD and the cathode power supply potential PVSS, and emits light. That is, the anode power supply potential PVDD has a potential difference with respect to the cathode power supply potential PVSS that causes the light emitting element 3 to emit light.
  • the anode terminal 23t of the light emitting element 3 is connected to the anode electrode 23, and the second capacitor Cs2 is connected between the anode electrode 23 and the anode power supply line L1.
  • the source electrode of the drive transistor DRT is connected to the anode terminal 23t of the light emitting element 3 via the anode electrode 23, and the drain electrode is connected to the source electrode of the output transistor BCT.
  • the gate electrode of the drive transistor DRT is connected to the first capacitor Cs1, the drain electrode of the pixel selection transistor SST, and the drain electrode of the initialization transistor IST.
  • the gate electrode of the output transistor BCT is connected to the output control signal line L6.
  • the output control signal BG is supplied to the output control signal line L6.
  • the drain electrode of the output transistor BCT is connected to the anode power supply line L1.
  • the source electrode of the initialization transistor IST is connected to the initialization power supply line L4.
  • the initialization potential Vini is supplied to the initialization power supply line L4.
  • the gate electrode of the initialization transistor IST is connected to the initialization control signal line L8.
  • An initialization control signal IG is supplied to the initialization control signal line L8. That is, the initialization power supply line L4 is connected to the gate electrode of the drive transistor DRT through the initialization transistor IST.
  • the source electrode of the pixel selection transistor SST is connected to the video signal line L2.
  • the video signal Vsig is supplied to the video signal line L2.
  • the pixel control signal line L7 is connected to the gate electrode of the pixel selection transistor SST.
  • a pixel control signal SG is supplied to the pixel control signal line L7.
  • the source electrode of the reset transistor RST is connected to the reset power supply line L3.
  • the reset power supply potential Vrst is supplied to the reset power supply line L3.
  • the reset control signal line L5 is connected to the gate electrode of the reset transistor RST.
  • a reset control signal RG is supplied to the reset control signal line L5.
  • the drain electrode of the reset transistor RST is connected to the anode electrode 23 (anode terminal 23t of the light emitting element 3) and the source electrode of the drive transistor DRT. The reset operation of the reset transistor RST resets the voltage held in the first capacitor Cs1 and the second capacitor Cs2.
  • a first capacitor Cs1 is provided between the drain electrode of the reset transistor RST and the gate electrode of the drive transistor DRT.
  • the pixel circuit PICA can suppress the fluctuation of the gate voltage due to the parasitic capacitance of the drive transistor DRT and the leakage current by the first capacitance Cs1 and the second capacitance Cs2.
  • the anode power supply line L1 and the cathode power supply line L10 may be simply referred to as power supply lines.
  • the video signal line L2, the reset power supply line L3, and the initialization power supply line L4 may be referred to as signal lines.
  • the reset control signal line L5, the output control signal line L6, the pixel control signal line L7, and the initialization control signal line L8 may be referred to as gate lines.
  • a potential according to the video signal Vsig (or gradation signal) is supplied to the gate electrode of the drive transistor DRT. That is, the drive transistor DRT supplies the light emitting element 3 with a current according to the video signal Vsig based on the anode power supply potential PVDD supplied via the output transistor BCT. In this way, the anode power supply potential PVDD supplied to the anode power supply line L1 drops due to the drive transistor DRT and the output transistor BCT, so that a potential lower than the anode power supply potential PVDD is supplied to the anode terminal 23t of the light emitting element 3. To be done.
  • the anode power supply potential PVDD is supplied to one electrode of the second capacitance Cs2 via the anode power supply line L1, and the potential lower than the anode power supply potential PVDD is supplied to the other electrode of the second capacitance Cs2. That is, one electrode of the second capacitor Cs2 is supplied with a higher potential than the other electrode of the second capacitor Cs2.
  • One electrode of the second capacitor Cs2 is, for example, the anode power supply line L1, and the other electrode of the second capacitor Cs2 is the anode electrode 23 connected to the source of the drive transistor DRT and the anode connection electrode connected thereto. 24.
  • the drive circuit 12 sequentially selects a plurality of pixel rows from the top row (for example, the pixel row located at the top in the display area AA in FIG. 1).
  • the drive IC 210 writes the video signal Vsig (video writing potential) to the pixels 49 of the selected pixel row, and causes the light emitting element 3 to emit light.
  • the drive IC 210 supplies the video signal Vsig to the video signal line L2, the reset power supply potential Vrst to the reset power supply line L3, and the initialization potential Vini to the initialization power supply line L4 for each horizontal scanning period.
  • the display device 1 repeats these operations for each frame of image.
  • FIG. 4 is an enlarged plan view showing two pixels of the display device according to the embodiment.
  • FIG. 4 shows two pixels 49 (for example, a second pixel 49Ga and a third pixel 49Gb) adjacent to each other in the first direction Dx.
  • the anode power supply line L1, the video signal line L2, the reset power supply line L3, and the initialization power supply line L4 extend in the second direction Dy.
  • the reset control signal line L5, the output control signal line L6, the pixel control signal line L7, and the initialization control signal line L8 extend in the first direction Dx, and in plan view, the anode power supply line L1, the video signal line L2, and the reset power supply.
  • the line L3 and the initialization power supply line L4 intersect with each other.
  • the connection wiring L9 is provided between the two anode power supply lines L1 adjacent to each other in the first direction Dx.
  • the connection wiring L9 connects the drive transistor DRT, the pixel selection transistor SST, and the initialization transistor IST.
  • the anode power supply line L1, the video signal line L2, the reset power supply line L3, and the initialization power supply line L4 are hatched in order to distinguish each wiring and semiconductor layer.
  • the reset control signal line L5, the output control signal line L6, the pixel control signal line L7, and the initialization control signal line L8 are shown by dotted lines.
  • the semiconductor layers 61, 65, 71, 75, 79 are also shaded.
  • the anode connection electrode 24 is shown by a two-dot chain line.
  • the anode power supply line L1, the video signal line L2, the reset power supply line L3, the initialization power supply line L4, and the connection wiring L9 are gate lines (reset control signal line L5, output control signal line L6, pixel control signal line L7, initialization). It is formed of a metal layer provided in a layer different from the control signal line L8).
  • titanium (Ti), molybdenum (Mo), tungsten (W), tantalum (Ta), niobium (Nb), indium tin oxide (ITO), aluminum (Al), silver (Ag), Ag An alloy, copper (Cu), carbon nanotube, graphite, graphene or carbon nanobud is used.
  • the sheet resistance values of the anode power supply line L1, the video signal line L2, the reset power supply line L3, the initialization power supply line L4, and the connection wiring L9 are not more than the sheet resistance value of each gate line.
  • the sheet resistance value of the anode power supply line L1 is less than or equal to the sheet resistance value of each signal line (video signal line L2, reset power supply line L3, initialization power supply line L4) and connection wiring L9.
  • the sheet resistance value of the anode power supply line L1 is 30 m ⁇ / ⁇ or more and 120 m ⁇ / ⁇ or less.
  • the sheet resistance value of each signal line and the connection wiring L9 is 120 m ⁇ / ⁇ or more and 300 m ⁇ / ⁇ or less.
  • the sheet resistance value of each gate line is 300 m ⁇ / ⁇ or more and 3000 m ⁇ / ⁇ or less. Accordingly, the display device 1 can suppress the voltage drop of the drive voltage applied to the anode power supply line L1 and can suppress the deterioration of the display performance.
  • each wiring is not limited to a single layer, and may be composed of a laminated film.
  • each power supply line and signal line may have a laminated structure of Ti / Al / Ti or Mo / Al / Mo, or may be a single layer film of Al.
  • Ti, Al and Mo may be alloys.
  • the semiconductor layers 61, 65, 71, 75, 79 are made of, for example, amorphous silicon, microcrystalline oxide semiconductor, amorphous oxide semiconductor, polysilicon, low temperature polysilicon (LTPS: Low Temperature Polycrystalline Silicon) or gallium nitride (GaN). Composed.
  • oxide semiconductors include IGZO, zinc oxide (ZnO), and ITZO.
  • IGZO is indium gallium zinc oxide.
  • ITZO is indium tin zinc oxide.
  • the semiconductor layers 61, 65, 71, 75, 79 may all be made of the same material, for example, polysilicon.
  • the reset power supply line L3 and the initialization power supply line L4 are shared by two pixels 49 adjacent to each other in the first direction Dx. That is, in the second pixel 49Ga shown on the left side of FIG. 4, the initialization power supply line L4 is not provided, but the reset power supply line L3 is provided along the video signal line L2. In the third pixel 49Gb shown on the right side of FIG. 4, the reset power supply line L3 is not provided, but the initialization power supply line L4 is provided along the video signal line L2. As a result, the number of wirings can be reduced and wirings can be efficiently arranged as compared with the case where the reset power supply line L3 and the initialization power supply line L4 are provided in each pixel 49.
  • the drive transistor DRT has a semiconductor layer 61, a source electrode 62 and a gate electrode 64.
  • the semiconductor layer 61, the source electrode 62, and the gate electrode 64 are arranged such that at least a portion thereof overlaps each other in plan view, and the two anode power supply lines L1 adjacent to each other in the first direction Dx, the output control signal line L6, and the pixel control It is provided in a region surrounded by the signal line L7.
  • a channel region is formed in a portion of the semiconductor layer 61 that overlaps with the gate electrode 64.
  • the drive transistor DRT has a single gate structure in which one gate electrode 64 is provided so as to overlap the semiconductor layer 61.
  • the semiconductor layer 61 has a first partial semiconductor layer 61a.
  • the first partial semiconductor layer 61a is the same layer as the semiconductor layer 61 and is made of the same semiconductor material.
  • the first partial semiconductor layer 61a is a portion protruding from the semiconductor layer 61 in the first direction Dx.
  • the width of the first partial semiconductor layer 61a in the first direction Dx is larger than the width of the semiconductor layer 61 in the first direction Dx at the portion connected to the semiconductor layer 65 of the output transistor BCT.
  • the semiconductor layer 61 is connected to the source electrode 62 via the first partial semiconductor layer 61a.
  • the semiconductor layer 61 and the first partial semiconductor layer 61a are provided so as to overlap the first insulating film 91 (see FIG.
  • the semiconductor layer 61 and the first partial semiconductor layer 61a may each be formed in a rectangular shape and electrically connected to each other via a connecting portion.
  • the output transistor BCT has a semiconductor layer 65.
  • the semiconductor layer 65 is connected to the semiconductor layer 61 of the drive transistor DRT and intersects the output control signal line L6 in a plan view.
  • a channel region is formed in a region of the semiconductor layer 65 that overlaps with the output control signal line L6.
  • a portion of the output control signal line L6 that overlaps with the semiconductor layer 65 functions as the gate electrode 66 of the output transistor BCT.
  • One end side of the semiconductor layer 65 is electrically connected to the anode power supply line connecting portion L1a.
  • the anode power supply line connecting portion L1a is a portion branched from the anode power supply line L1 in the first direction Dx. As a result, the anode power supply potential PVDD is supplied from the anode power supply line L1 to the drive transistor DRT and the output transistor BCT.
  • the initialization transistor IST has the semiconductor layer 71.
  • the initialization transistor IST includes the semiconductor layer 71A.
  • the semiconductor layers 71 and 71A respectively intersect the initialization control signal line L8 and the branch signal line L8a in a plan view.
  • a channel region is formed in a region of the semiconductor layers 71 and 71A that overlaps with the initialization control signal line L8 and the branch signal line L8a.
  • the branch signal line L8a is branched from the initialization control signal line L8 and extends in the first direction Dx.
  • the portions of the initialization control signal line L8 and the branch signal line L8a that overlap the semiconductor layers 71 and 71A function as the gate electrode 74 of the initialization transistor IST, respectively. That is, the initialization transistor IST has a double gate structure in which two gate electrodes 74 are provided so as to overlap with the semiconductor layers 71 and 71A, respectively.
  • the semiconductor layer 71 extends in the second direction Dy, one end thereof is electrically connected to the connection wiring L9, and the other end thereof is connected to the initialization power supply line connecting portion L4a.
  • the initialization power supply line connecting portion L4a is a portion branched from the initialization power supply line L4 in the first direction Dx.
  • the semiconductor layer 71A has a portion extending in the second direction Dy and a portion extending in the first direction Dx. One end of the portion of the semiconductor layer 71A extending in the second direction Dy is electrically connected to the connection wiring L9.
  • a portion of the semiconductor layer 71A extending in the first direction Dx intersects with the anode power supply line L1 and the video signal line L2 in a plan view and extends to the third pixel 49Gb to electrically connect to the initialization power supply line connecting portion L4a. Connected to each other. With the configuration described above, one initialization power supply line L4 is electrically connected to the two initialization transistors IST and shared by the two pixels 49 adjacent to each other in the first direction Dx.
  • the pixel selection transistor SST has a semiconductor layer 75.
  • the semiconductor layer 75 extends in the first direction Dx and intersects the two branch signal lines L7a in a plan view. A channel region is formed in the semiconductor layer 75 in a region overlapping the two branch signal lines L7a.
  • the two branch signal lines L7a are portions branched from the pixel control signal line L7 in the second direction Dy.
  • a portion of the two branch signal lines L7a that overlaps with the semiconductor layer 75 functions as a gate electrode 78 of the pixel selection transistor SST. That is, the pixel selection transistor SST has a double gate structure in which the two gate electrodes 78 are provided so as to overlap the semiconductor layer 75.
  • One end of the semiconductor layer 75 is connected to the video signal line connecting portion L2a, and the other end is connected to the connection wiring L9.
  • the video signal line connection portion L2a is a portion branched from the video signal line L2 in the first direction Dx.
  • the reset transistor RST has a semiconductor layer 79.
  • the semiconductor layer 79 extends in the second direction Dy and intersects the reset control signal line L5 and the branch signal line L5a in a plan view.
  • a channel region is formed in the semiconductor layer 79 in a region overlapping the reset control signal line L5 and the branch signal line L5a.
  • the branch signal line L5a is branched from the reset control signal line L5 and extends in the first direction Dx.
  • the portions of the reset control signal line L5 and the branch signal line L5a that overlap the semiconductor layer 79 function as the gate electrodes of the reset transistor RST, respectively. That is, the reset transistor RST has a double gate structure.
  • the reset power supply line L3 is connected to reset power supply line connecting portions L3a and L3b and a bridge portion L3c extending in the first direction Dx.
  • the reset power supply line connecting portions L3a and L3b are formed of the same metal layer as the reset power supply line L3, and the bridge portion L3c is a layer different from the reset power supply line connecting portions L3a and L3b, for example, a metal layer of the same layer as various gate lines. Is formed by.
  • the reset power supply line connecting portion L3a is provided in the second pixel 49Ga, and the reset power supply line connecting portion L3b is provided in the third pixel 49Gb.
  • An anode power supply line L1, a video signal line L2, and an initialization power supply line L4 are provided between the reset power supply line connecting portion L3a and the reset power supply line connecting portion L3b.
  • the bridge portion L3c intersects the anode power supply line L1, the video signal line L2, and the initialization power supply line L4 in a plan view, and connects the reset power supply line connecting portion L3a and the reset power supply line connecting portion L3b.
  • one end of the semiconductor layer 79 is connected to the reset power supply line connecting portion L3a.
  • one end of the semiconductor layer 79 is connected to the reset power supply line connecting portion L3b.
  • the other end of the semiconductor layer 79 is electrically connected to the semiconductor layer 61 of the drive transistor DRT. That is, the other end of the semiconductor layer 79 of the reset transistor RST is electrically connected to the anode terminal 23t of the light emitting element 3 via the semiconductor layer 61 and the source electrode 62.
  • the first capacitor Cs1 (see FIG. 3) is formed between the semiconductor layer 61 (first partial semiconductor layer 61a) and the gate electrode 64.
  • the anode connection electrode 24 is electrically connected to the drive transistor DRT and is arranged at least overlapping with the anode power supply line L1.
  • a second capacitor Cs2 (see FIG. 3) is formed between the anode connection electrode 24 and the anode power supply line L1 and various wirings connected to the anode power supply line L1.
  • the second capacitance Cs2 formed by the second pixel 49Ga has a smaller capacitance value than the second capacitance Cs2 formed by the third pixel 49Gb.
  • the area of the anode connection electrode 24 provided in the second pixel 49Ga is smaller than the area of the anode connection electrode 24 provided in the third pixel 49Gb.
  • the second capacitance Cs2 is, for example, about 150 fF.
  • the second capacitance Cs2 is, for example, about 250 fF.
  • the drive transistor DRT and the output transistor BCT for supplying the drive current to the light emitting element 3 have a single gate structure.
  • the initialization transistor IST, the pixel selection transistor SST, and the reset transistor RST have a double gate structure. Thereby, the leak currents of the initialization transistor IST, the pixel selection transistor SST, and the reset transistor RST can be suppressed.
  • FIG. 5 is a sectional view taken along the line VV ′ of FIG.
  • FIG. 6 is a sectional view taken along line VI-VI ′ of FIG. Note that, in FIG. 6, the cathode wiring 60 and the transistor Tr provided in the peripheral area GA are schematically shown.
  • the light emitting element 3 is provided on the array substrate 2.
  • the array substrate 2 has a substrate 21, various transistors, various wirings, and various insulating films.
  • the substrate 21 is an insulating substrate, and for example, a glass substrate, a resin substrate, a resin film, or the like is used.
  • the direction from the substrate 21 toward the planarization film 27 in the direction perpendicular to the surface of the substrate 21 is referred to as “upper side”. Further, the direction from the flattening film 27 to the substrate 21 is referred to as “lower side”.
  • the drive transistor DRT, the output transistor BCT, the initialization transistor IST, the pixel selection transistor SST, and the reset transistor RST are provided on one surface side of the substrate 21.
  • the undercoat film 90, each gate line, the first insulating film 91, the semiconductor layers 61, 65, 71, 75, the second insulating film 92, each signal line and power supply line, the third insulating film. 93, the anode connection electrode 24, the shield electrode 26, and the fourth insulating film 94 are stacked in this order.
  • the anode electrode 23 and the light emitting element 3 are provided on the anode connection electrode 24 and the shield electrode 26 via the fourth insulating film 94.
  • the array substrate 2 includes layers from the substrate 21 to the anode electrode 23.
  • the array substrate 2 does not include the flattening film 27, the cathode electrode 22, and the light emitting element 3.
  • the undercoat film 90, the first insulating film 91, the second insulating film 92, and the fourth insulating film 94 are inorganic insulating materials such as a silicon oxide film (SiO), a silicon nitride film (SiN), or a silicon oxynitride film (SiON). Is used. Further, each inorganic insulating film is not limited to a single layer and may be a laminated film. Further, the undercoat film 90 may not be provided.
  • the third insulating film 93 and the flattening film 27 are an organic insulating film or an inorganic-organic hybrid insulating film (a material in which an organic group (methyl group or phenyl group) is bonded to the Si—O main chain).
  • the gate electrodes 64, 66, 74, 78 are provided on the substrate 21 via the undercoat film 90.
  • the first insulating film 91 is provided on the undercoat film 90 so as to cover the gate electrodes 64, 66, 74 and 78.
  • the semiconductor layers 61, 65, 71, 75 are provided on the first insulating film 91.
  • the second insulating film 92 is provided on the first insulating film 91 so as to cover the semiconductor layers 61, 65, 71, 75.
  • each transistor has a so-called bottom gate structure.
  • each transistor may have a top gate structure in which a gate electrode is provided on the upper side of the semiconductor layer or a dual gate structure in which a gate electrode is provided on both the upper side and the lower side of the semiconductor layer.
  • connection wiring L9, the source electrodes 62 and 72, and the drain electrode 67 are provided on the second insulating film 92.
  • the source electrode 62 is electrically connected to the first partial semiconductor layer 61a (semiconductor layer 61) through a contact hole provided in the second insulating film 92.
  • the drain electrode 67 is electrically connected to the semiconductor layer 65 via a contact hole provided in the second insulating film 92.
  • the source electrode 72 of the initialization transistor IST is electrically connected to the semiconductor layer 71 via a contact hole provided in the second insulating film 92.
  • connection wiring L9 is electrically connected to the semiconductor layer 75 of the pixel selection transistor SST via a contact hole provided in the second insulating film 92. A portion of the connection wiring L9 that overlaps with the semiconductor layer 75 functions as the drain electrode 77. The other end of the connection wiring L9 is electrically connected to the semiconductor layer 71 of the initialization transistor IST via a contact hole provided in the second insulating film 92. A portion of the connection wiring L9 that overlaps with the semiconductor layer 71 functions as the drain electrode 73. With such a configuration, the drain of the pixel selection transistor SST and the drain of the initialization transistor IST are electrically connected via the connection wiring L9.
  • the third insulating film 93 is provided on the second insulating film 92, covering the source electrodes 62, 72 and the drain electrodes 67, 73, 77.
  • the anode connection electrode 24 and the shield electrode 26 are provided on the third insulating film 93.
  • the anode connection electrode 24 is connected to the source electrode 62 via a contact hole provided in the third insulating film 93.
  • the shield electrode 26 is provided below the anode electrode 23 and the light emitting element 3.
  • the fourth insulating film 94 is provided on the third insulating film 93 so as to cover the anode connection electrode 24 and the shield electrode 26.
  • the anode electrode 23 is provided on the fourth insulating film 94.
  • the anode electrode 23 is electrically connected to the anode connection electrode 24 via a contact hole provided in the fourth insulating film 94.
  • the light emitting element 3 is provided on the anode electrode 23, and the anode terminal 23t of the light emitting element 3 is connected to the anode electrode 23. As a result, the anode terminal 23t of the light emitting element 3 is electrically connected to the source electrode 62 of the drive transistor DRT.
  • the flattening film 27 is provided on the fourth insulating film 94 so as to cover at least the side surface 3a of the light emitting element 3.
  • the cathode electrode 22 is provided on the flattening film 27 and is connected to the cathode terminal 22t of the light emitting element 3.
  • the cathode electrode 22 is provided from the display area AA to the peripheral area GA and is electrically connected to the light emitting elements 3 of the plurality of pixels 49.
  • a transistor Tr included in the drive circuit 12 in the peripheral area GA of the substrate 21, as a plurality of transistors, a transistor Tr included in the drive circuit 12 (see FIG. 1) and a cathode wiring 60 are provided.
  • the cathode wiring 60 is provided in the same layer as the anode power supply line L1 and is provided on the second insulating film 92 in the peripheral region GA.
  • the cathode electrode 22 shown in FIG. 5 is electrically connected to the cathode wiring 60 through the contact holes provided in the third insulating film 93, the fourth insulating film 94, and the flattening film 27.
  • the cathode power supply line L10 shown in FIG. 3 includes a cathode wiring 60 and a cathode electrode 22.
  • the transistor Tr includes a semiconductor layer 81, a source electrode 82, a drain electrode 83 and a gate electrode 84.
  • the transistor Tr has the same layer structure as each transistor included in the pixel circuit PICA, and detailed description thereof will be omitted.
  • the semiconductor layer 81 is provided on the first insulating film 91, that is, in the same layer as the semiconductor layers 61, 65, 71, 75, 79. However, the transistor Tr may be provided in a layer different from that of each transistor of the pixel 49.
  • the anode power supply line L1, the video signal line L2, and the reset power supply line L3 are provided on the second insulating film 92.
  • the width of the anode power supply line L1 is larger than the width of each of the video signal line L2 and the reset power supply line L3.
  • the thickness t2 of the anode power supply line L1 is thicker than the thickness t1 of the gate electrode 64 (see FIG. 5).
  • the thickness t2 of the anode power supply line L1 is equal to the thickness of the video signal line L2 and the reset power supply line L3. As a result, the resistance value of the anode power supply line L1 can be reduced.
  • the thickness t2 of the anode power supply line L1 may be different from the thicknesses of the video signal line L2 and the reset power supply line L3.
  • each wiring can be changed appropriately.
  • the anode power supply line L1 and each signal line such as the video signal line L2 and the reset power supply line L3 may be provided in different layers.
  • the capacitance formed between the anode power supply line L1 and various gate lines is used as a decoupling capacitor.
  • the decoupling capacitor can absorb the fluctuation of the anode power supply potential PVDD and stably operate the drive IC 210.
  • the decoupling capacitor can suppress leakage of electromagnetic noise generated in the display device 1 to the outside.
  • the configuration of the pixel circuit PICA shown in FIG. 3 described above can be changed as appropriate.
  • the number of wirings and the number of transistors in one pixel 49 may be different.
  • FIG. 7 is a cross-sectional view showing the red light emitting element according to the embodiment.
  • the red light emitting element 3R has a so-called face-up structure in which the anode terminal 23t is provided on the lower side and the cathode terminal 22t is provided on the upper side.
  • the red light emitting element 3R includes a plurality of partial light emitting elements 3s, a protective layer 39 covering the plurality of partial light emitting elements 3s, a p-type electrode 37, and an n-type electrode 38.
  • the plurality of partial light emitting elements 3s are formed in a columnar shape between the p-type electrode 37 and the n-type electrode 38, respectively.
  • the plurality of partial light emitting devices 3s include an n-type clad layer 33, a light emitting layer 34, and a p-type clad layer 35.
  • the n-type electrode 38 is electrically connected to the n-type cladding layer 33.
  • the p-type electrode 37 is electrically connected to the p-type clad layer 35.
  • a p-type clad layer 35, a light emitting layer 34, and an n-type clad layer 33 are stacked in this order on the p-type electrode 37.
  • the n-type cladding layer 33 has a first n-type cladding layer 33a and a second n-type cladding layer 33b.
  • the second n-type cladding layer 33b and the first n-type cladding layer 33a are stacked in this order on the light emitting layer 34.
  • the first n-type cladding layer 33a is, for example, n-type gallium nitride (n-GaN)
  • the second n-type cladding layer 33b is, for example, n-type aluminum gallium nitride (n-AlGaN).
  • the p-type clad layer 35 has a first p-type clad layer 35a and a second p-type clad layer 35b.
  • a first p-type clad layer 35a and a second p-type clad layer 35b are stacked in this order on the p-type electrode 37. That is, the light emitting layer 34 is provided between the second p-type cladding layer 35b and the second n-type cladding layer 33b.
  • the first p-type cladding layer 35a is, for example, p-type gallium nitride (p-GaN)
  • the second p-type cladding layer 35b is, for example, p-type aluminum gallium nitride (p-AlGaN).
  • the light emitting layer 34 of the red light emitting element 3R is gallium nitride (GaN) to which europium (Eu) is added. As a result, the red light emitting element 3R can improve the light emission efficiency of red light.
  • the n-type electrode 38 is a translucent conductive material such as ITO (Indium Tin Oxide).
  • the n-type electrode 38 is the cathode terminal 22t of the red light emitting element 3R and is connected to the cathode electrode 22.
  • the p-type electrode 37 is the anode terminal 23t of the red light emitting element 3R and has a Pt layer 37a and a thick Au layer 37b formed by plating.
  • the thick film Au layer 37b is connected to the mounting surface 23a of the anode electrode 23.
  • the protective layer 39 is, for example, SOG (Spin on Glass).
  • the side surface of the protective layer 39 becomes the side surface 3a of the red light emitting element 3R.
  • the flattening film 27 is provided so as to surround the side surface of the protective layer 39.
  • the light emitting layer 34 is provided in each of the plurality of partial light emitting devices 3s, and the state of europium (Eu) added to gallium nitride (GaN) can be different for each of the plurality of partial light emitting devices 3s. Specifically, the addition amount of europium (Eu) is different for each of the plurality of partial light emitting devices 3s. As a result, the red light emitting element 3R can increase the half width of the light spectrum SPR (see FIG. 8).
  • the red light emitting element 3R is described with reference to FIG. 7, the cross-sectional structures of the first green light emitting element 3Ga, the second green light emitting element 3Gb, and the blue light emitting element 3B are also the same.
  • indium gallium nitride InGaN is used as the material of the n-type cladding layer 33 and the p-type cladding layer 35.
  • the light emitting layer 34 is indium gallium nitride (In x Ga (1-x ) N) and gallium nitride (GaN) and a multiple quantum well structure configured by a plurality of layers stacked repeatedly (MQW structure).
  • FIG. 8 is a graph schematically showing the relationship between the emission intensity and the wavelength of the red light emitting element and the first green light emitting element.
  • FIG. 8 shows a spectrum SPR of light emitted from the red light emitting element 3R and spectra SPG-1, SPG-2, SPG-3 of light emitted from the first green light emitting element 3Ga.
  • Spectra SPG-1, SPG-2, and SPG-3 show the spectra of light when the driving currents of different magnitudes are supplied to the first green light emitting element 3Ga. The drive current decreases in the order of spectra SPG-1, SPG-2, and SPG-3.
  • the maximum emission wavelengths of spectrum SPR and spectrum SPG-1 are about 620 nm and 520 nm, respectively.
  • gallium nitride (GaN) to which europium (Eu) is added is used as the light emitting layer 34 of the red light emitting element 3R, so that the light emitting efficiency (emission intensity) of the red light emitting element 3R is improved.
  • the full width at half maximum of spectrum SPR is smaller than the full width at half maximum of spectra SPG-1, SPG-2, and SPG-3.
  • the drive current supplied to the first green light emitting element 3Ga decreases, that is, the emission intensity decreases and the maximum emission wavelength increases in the order of the spectra SPG-1, SPG-2, and SPG-3. That is, the emission intensity of the spectra SPG-2 and SPG-3 of the first green light emitting element 3Ga is smaller than the emission intensity of the red light emitting element 3R.
  • the maximum emission wavelength approaches the maximum emission wavelength of the spectrum SPR in the order of the spectra SPG-1, SPG-2, and SPG-3.
  • the wavelength region of the spectrum SPR of red light overlaps a part of the wavelength region of the spectra SPG-1, SPG-2, SPG-3 of the first green light.
  • FIG. 8 shows the spectra SPG-1, SPG-2, SPG-3 of the first green light of the first green light emitting element 3Ga.
  • the second green light emitting element 3Gb can also have the same configuration as the first green light emitting element 3Ga, and the spectrum of the second green light emitted from the second green light emitting element 3Gb is also the spectrum SPG-1, The same as SPG-2 and SPG-3.
  • the first green light emitting element 3Ga when displaying red, is used as auxiliary light for the red light emitting element 3R. That is, the pixel Pix displays the red light by simultaneously lighting the red light emitting element 3R and the first green light emitting element 3Ga and mixing the light from the red light emitting element 3R and the light from the first green light emitting element 3Ga. .. A driving current smaller than those of the second green light emitting element 3Gb and the red light emitting element 3R is supplied to the first green light emitting element 3Ga.
  • the first green light emitting element 3Ga emits light having an intensity distribution as shown in the spectrum SPG-2 or the spectrum SPG-3.
  • the second green light emitting element 3Gb is driven independently of the first green light emitting element 3Ga and emits light having an intensity distribution as shown in the spectrum SPG-1.
  • the emission intensity of the first green light emitting element 3Ga is lower than the emission intensity of the red light emitting element 3R, and is half of the light spectrum of the first green light emitting element 3Ga (for example, the spectrum SPG-2 or the spectrum SPG-3).
  • the value width is larger than the half value width of the spectrum SPR of the light of the red light emitting element 3R.
  • the emission intensity of the second green light emitting element 3Gb is higher than the emission intensity of the first green light emitting element 3Ga.
  • the maximum emission wavelength of the light spectrum of the first green light emitting element 3Ga is greater than the maximum emission wavelength of the light spectrum of the second green light emitting element 3Gb (for example, the spectrum SPG-1). Is also longer than the maximum emission wavelength of the spectrum SPR of the light of the red light emitting element 3R.
  • the wavelength distribution of red light is substantially broadened compared to the case where red is displayed only by the red light emitting element 3R. Accordingly, the half-value width of the red light emitted by mixing the lights from the red light-emitting element 3R and the first green light-emitting element 3Ga, and the half-value width and the blue of the green light emitted from the second green light-emitting element 3Gb. The difference from the full width at half maximum of the blue light emitted from the light emitting element 3B becomes small. Therefore, the display device 1 can suppress the vivid display of only red depending on the image, and can display the image well.
  • FIG. 9 is a block diagram schematically showing the configuration of the signal processing circuit.
  • FIG. 10 is an explanatory diagram for explaining the relationship between the input gradation value and the driven light emitting element.
  • the signal processing circuit 100 includes a first processing circuit 110, a memory 115, and a buffer 125.
  • the signal processing circuit 100 calculates the output gradation values SoR, SoGa, SoGb, SoB of each of the four pixels 49 based on the video signal Vsig.
  • the video signal Vsig includes input gradation values SiR, SiG, and SiB for each pixel Pix.
  • the input gradation values SiR, SiG, and SiB are gradation values of red, green, and blue, respectively.
  • the output gradation value SoR is a gradation value corresponding to the first pixel 49R.
  • the output gradation value SoGa is a gradation value corresponding to the second pixel 49Ga.
  • the output gradation value SoGb is a gradation value corresponding to the third pixel 49Gb.
  • the output gradation value SoB is a gradation value corresponding to the fourth pixel 49B.
  • the signal processing circuit 100 may be included in, for example, the drive IC 210 shown in FIG. 1, or may be provided on the substrate 21 as a circuit chip separate from the drive IC 210.
  • the output grayscale values So are referred to as output grayscale values So.
  • the input gradation values Si are referred to as the input gradation values Si.
  • the buffer 125 is a circuit that stores the input gradation value Si.
  • the buffer 125 may store the input gradation value Si included in the video signal Vsig for one frame, or the input floor value included in a part of the video signal Vsig of the video signal Vsig for one frame.
  • the adjustment value Si may be taken in.
  • the memory 115 includes a data LUT showing information indicating the relationship between the input gradation values SiR, SiG, SiB and the output gradation values SoR, SoGa, SoGb, SoB of each of the four pixels 49.
  • the data LUT is, for example, table data such as a Look Up Table.
  • the data LUT is associated with the output gradation value SoR for turning on only the red light emitting element 3R in the range where the input gradation value SiR is 0 or more and the first threshold value Lth (see FIG. 10) or less. That is, the output gradation value SoGa is 0 (gradation value 0) in the range where the input gradation value SiR is 0 or more and the first threshold value Lth or less.
  • the red light emitting element 3R and the first green light emitting element 3Ga are in the range where the input gradation value SiR is larger than the first threshold value Lth and smaller than the second threshold value Hth (see FIG. 10).
  • the output gradation values SoR and SoGa that light both of the above are associated with each other.
  • the second threshold value Hth is a gradation value larger than the first threshold value Lth.
  • the data LUT is associated with output gradation values SoR and SoGa for turning on only the red light emitting element 3R in the range where the input gradation value SiR is equal to or more than the second threshold value Hth. That is, the output gradation value SoGa is 0 (gradation value 0) in the range where the input gradation value SiR is equal to or higher than the second threshold value Hth.
  • the first processing circuit 110 refers to the data LUT read from the memory 115 and specifies the output gradation values SoR, SoGa, SoGb, SoB corresponding to the input gradation values SiR, SiG, SiB.
  • the first processing circuit 110 outputs the output grayscale values SoR, SoGa, SoGb, SoB to the pixel Pix. Each pixel 49 lights up based on the output gradation values SoR, SoGa, SoGb, SoB.
  • the red light emitting element 3R is turned on and the first green light emitting element is turned on based on the output gradation values SoR and SoGa. 3Ga does not light up.
  • the red light emitting element 3R and the first green light emitting element 3Ga are based on the output gradation values SoR and SoGa. Both lights up.
  • the first green light emitting element 3Ga lights up in the red intermediate grayscale.
  • the input gradation value SiR is equal to or higher than the second threshold value Hth, only the red light emitting element 3R is turned on and the first green light emitting element 3Ga is not turned on.
  • the red light emitting element 3R having high light emission efficiency is turned on, so that an increase in drive current can be suppressed and good display can be performed. ..
  • the display of the intermediate gradation it is possible to perform excellent display by turning on both the red light emitting element 3R and the first green light emitting element 3Ga.
  • the second capacitor Cs2 formed by the second pixel 49Ga is the second capacitor Cs2 formed by another pixel 49. Can be smaller than.
  • FIG. 11 is a flowchart for explaining a method of setting the output gradation value of each light emitting element.
  • the signal processing circuit 100 calculates the output grayscale values SoR, SoGa, SoGb, SoB based on the predetermined data LUT, but the present invention is not limited to this.
  • the signal processing circuit 100 takes in one frame image (step ST1).
  • the buffer 125 takes in the video signal Vsig for one frame and stores the input gradation values SiR, SiG, and SiB corresponding to red, green, and blue, respectively.
  • the first processing circuit 110 determines, for each pixel Pix, whether the input gradation value SiR is larger than 0 (step ST2). In other words, it is determined for each pixel Pix whether or not there is red display.
  • the first processing circuit 110 sets the gradation value 0 as the output gradation values SoR and SoGa (step ST3).
  • the gradation value 0 is a gradation value that puts the pixel Pix in a non-lighting state.
  • the set output gradation values SoR and SoGa are output to the pixel Pix, and the red light emitting element 3R and the first green light emitting element 3Ga are turned off.
  • step ST2 when the input gradation value SiR is larger than 0 (step ST2, Yes), that is, when the input gradation value SiR is a value of 1 or more, the first processing circuit 110 sets the input gradation value SiR to The first threshold value Lth and the second threshold value Hth are compared (step ST4).
  • the first processing circuit 110 causes the red color to be red.
  • Output gradation values SoR and SoGa for turning on only the light emitting element 3R are set (step ST5). More specifically, a value larger than 0 (grayscale value SioR) based on the input grayscale value SiR is set as the output grayscale value SoR, and a grayscale value 0 is set as the output grayscale value SoGa.
  • the set output gradation values SoR and SoGa are output to the pixel Pix, the red light emitting element 3R is turned on, and the first green light emitting element 3Ga is turned off.
  • the first processing circuit 110 causes the red light emitting element 3R and the first green light emitting element.
  • Output gradation values SoR and SoGa for lighting 3 Ga are set (step ST6). More specifically, a value larger than 0 (gradation value SioRa) based on the input gradation value SiR is set as the output gradation value SoR, and a gradation value SioGa based on the input gradation value SiR is set as the output gradation value SoGa. To set.
  • the gradation value SioGa has a value larger than 0.
  • the set output gradation values SoR and SoGa are output to the pixel Pix, and the red light emitting element 3R and the first green light emitting element 3Ga are turned on.
  • step ST7 determines whether the input gradation value SiG is larger than 0 (step ST7). In other words, the first processing circuit 110 determines whether there is a green display.
  • the first processing circuit 110 sets the gradation value 0 as the output gradation value SoGb (step ST8).
  • the set output gradation value SoGb is output to the pixel Pix, and the second green light emitting element 3Gb is turned off.
  • the first processing circuit 110 causes the first processing circuit 110 to calculate the gradation value based on the input gradation value SiG (The gradation value SioGb) is set as the output gradation value SoG (step ST9).
  • the set output gradation value SoGb is output to the pixel Pix, and the second green light emitting element 3Gb lights up.
  • the first processing circuit 110 determines whether the input gradation value SiB is larger than 0 (step ST10). In other words, the first processing circuit 110 determines whether or not there is a blue display. When the input gradation value SiB is 0 (No in step ST10), the first processing circuit 110 sets the gradation value 0 as the output gradation value SoB (step ST11). The set output gradation value SoB is output to the pixel Pix, and the blue light emitting element 3B is turned off.
  • step ST10 Yes
  • the first processing circuit 110 causes the first processing circuit 110 to calculate the gradation value based on the input gradation value SiB (
  • the gradation value SioB) is set as the output gradation value SoB.
  • the set output gradation value SoB is output to the pixel Pix, and the blue light emitting element 3B is turned on (step ST12).
  • step ST13 the first processing circuit 110 determines whether the output gradation values SoR, SoGa, SoGb, SoB of all pixels Pix for one frame have been set. .. When the output gradation values So of all the pixels Pix are not set (No in step ST13), the process from step ST2 is executed for the next pixel Pix. When the output gradation values So of all the pixels Pix have been set (Yes in step ST13), the setting processing of the output gradation values So is completed.
  • the output grayscale values SoR, SoGa, SoGb, and SoB are output to the pixels Pix, and the light emitting elements 3 arranged in the respective pixels Pix have the set output grayscale values SoR and SoGa.
  • SoGb, SoB are used for lighting control.
  • the timing at which the output gradation value So is set and then output to the pixel Pix may be after the setting of the output gradation value So of all the pixels in one frame is completed, or it may be connected to a common gate line. It may be output to the pixel Pix when the setting of the pixel group of one line is completed. Further, the output gradation values So may be sequentially output to the pixels Pix in the order in which the output gradation values So are set for each pixel Pix.
  • FIG. 12 is a block diagram schematically showing the configuration of the signal processing circuit according to the second modification.
  • FIG. 13 is a flowchart for explaining a method of setting the output gradation value of each light emitting element according to the second modification.
  • the signal processing circuit 100A further includes a second processing circuit 120.
  • two adjacent pixels Pix are referred to as a first pixel group Pix1 and a second pixel group Pix2.
  • the signal processing circuit 100A turns on some pixels 49 of the second pixel group Pix2 in addition to each pixel 49 of the first pixel group Pix1 based on the input gradation values SiR, SiG, SiB of the first pixel group Pix1. ..
  • the first processing circuit 110 performs the same processing as the processing shown in FIG. 11, and outputs the output gradation values SoR, SoGa1, SoGb, SoB to the second processing circuit 120.
  • the second processing circuit 120 compares the drive current corresponding to the output gradation value SoGa1 received from the first processing circuit 110 with a predetermined threshold current, and sets the output gradation value SoGa2 based on the comparison result. ..
  • the signal processing circuit 100A outputs the set output gradation value SoGa2 to the pixel Pix.
  • the second processing circuit 120 calculates the drive current supplied to the first green light emitting element 3Ga of the first pixel group Pix1 based on the output gradation value SoGa1.
  • the second processing circuit 120 sets the output gradation value SoGa2 so that the drive current of the first green light emitting element 3Ga does not exceed the predetermined threshold current. More specifically, when the drive current exceeds a predetermined threshold current, the output gradation value SoGa1 is divided into a reference gradation value SotGa and a holding gradation value SorGa, and the reference gradation value SotGa is output gradation. Set as the value SoGa2.
  • the reference gradation value SotGa is a gradation value corresponding to a threshold current or a drive current equal to or less than the threshold current, is set as an output gradation value SoGa2, and is the first green light emitting element of the first pixel group Pix1. It is output to 3Ga1. Further, the held gradation value SorGa is input to the memory 115.
  • the second processing circuit 120 When the held gradation value SorGa is held in the memory 115, the second processing circuit 120 outputs based on the held gradation value SorGa and the gradation value SioGa based on the input gradation value SiR of the second pixel group Pix2.
  • the gradation value SoGa2 is set.
  • the grayscale value SioGa corresponding to the input grayscale value SiR of the first pixel group Pix1 is divided into the reference grayscale value SotGa and the held grayscale value SorGa, the first green light emitting element 3Ga1 has the grayscale value SioGa.
  • the luminance when light is emitted and the luminance when the first green light emitting element 3Ga1 and the first green light emitting element 3Ga2 of the second pixel group Pix2 are made to emit light at the reference gradation value SotGa and the holding gradation value SorGa, respectively. It is set to be substantially equal. Then, based on the gradation value SioGa based on the input gradation value SiR of the second pixel group Pix2 and the held gradation value SorGa separated from the gradation value SioGa based on the input gradation value SiR of the first pixel group Pix1. Thus, the output gradation value SoGa2 for the first green light emitting element 3Ga2 of the second pixel group Pix2 is set.
  • Steps ST21 to ST26 and steps ST7 to ST13 in FIG. 13 are the same as those in FIG. 11, so detailed description will be omitted.
  • the second processing circuit 120 receives the output grayscale value SoGa1 from the first processing circuit 110, and the held grayscale value SorGa is held in the memory 115. It is determined whether or not it has been done (step ST31). When the held gradation value SorGa is held in the memory 115 (step ST31, Yes), the second processing circuit 120 sets the held gradation value SorGa as the output gradation value SoGa2 (step ST32).
  • the set output gradation value SoGa2 is output to the pixel Pix, and the first green light emitting element 3Ga included in the pixel Pix is turned on. If the memory 115 does not hold the held gradation value SorGa (step ST31, No), the second processing circuit 120 sets the output gradation value SoGa1 (gradation value 0) as the output gradation value SoGa2. (Step ST33).
  • the set output gradation value SoGa2 is output to the pixel Pix, and the first green light emitting element 3Ga included in the pixel Pix is turned off.
  • the second processing circuit 120 receives the output gradation value SoGa1 from the first processing circuit 110 and determines whether the memory 115 holds the held gradation value SorGa (step ST34). .. When the held gradation value SorGa is held in the memory 115 (step ST34, Yes), the second processing circuit 120 sets the held gradation to the output gradation value SoGa1 (the gradation value SioGa based on the input gradation value SiR). The value SorGa is added (step ST35).
  • the second processing circuit 120 determines that the drive current corresponding to the output gradation value SoGa1 (gradation value SioGa) is less than or equal to the threshold current. It is determined (step ST36).
  • the second processing circuit 120 sets the output gradation value SoGa1 as the output gradation value SoGa2 (step ST37). ).
  • the set output gradation value SoGa2 is output to the pixel Pix, and the first green light emitting element 3Ga included in the pixel Pix is turned on.
  • the second processing circuit 120 similarly drives the output gradation value SoGa1 (gradation value SioGa + hold gradation value SorGa) to which the retention gradation value SorGa is added. It is determined whether the current is below the threshold current (step ST36). When the drive current corresponding to the output grayscale value SoGa1 is equal to or smaller than the threshold current (Yes in step ST36), the output grayscale value SoGa1 to which the held grayscale value SorGa is added is set as the output grayscale value SoGa2 ( Step ST37).
  • the set output grayscale value SoGa2 is output to the pixel Pix, and the first green light emitting element 3Ga included in the pixel Pix is turned on at a grayscale corresponding to the output grayscale value SoGa1 to which the held grayscale value SorGa is added. ..
  • the second processing circuit 120 When the drive current corresponding to the output gradation value SoGa1 is larger than the threshold current (No in step ST36), the second processing circuit 120 causes the reference gradation value SotGa smaller than the output gradation value SoGa1 (gradation value SioGa). Is set as the output gradation value SoGa2 (step ST38). More specifically, the second processing circuit 120 calculates the reference gradation value SotGa and the holding gradation value SorGa based on the output gradation value SoGa1, and sets the reference gradation value SotGa as the output gradation value SoGa2. .. After the processing of step ST38 is completed, the second processing circuit 120 records the held gradation value SorGa in the memory 115 (step ST39). The set output gradation value SoGa2 is output to the pixel Pix, and the first green light emitting element 3Ga included in the pixel Pix is turned on.
  • the second processing circuit 120 similarly drives the output gradation value SoGa1 (gradation value SioGa + hold gradation value SorGa) to which the retention gradation value SorGa is added.
  • SoGa1 gradient value SioGa + hold gradation value SorGa
  • the second processing circuit 120 outputs the reference grayscale value SoGa2 smaller than the output grayscale value SoGa1 to which the held grayscale value SorGa is added, to the output grayscale value SoGa2. (Step ST38).
  • the second processing circuit 120 calculates the reference gradation value SotGa and the holding gradation value SorGa based on the output gradation value SoGa1 to which the holding gradation value SorGa is added, and calculates the reference gradation value SotGa. Is set as the output gradation value SoGa2 (step ST38). After the processing of step ST38 is completed, the second processing circuit 120 records the held gradation value SorGa in the memory 115 (step ST39). The set output gradation value SoGa2 is output to the pixel Pix, and the first green light emitting element 3Ga included in the pixel Pix is turned on.
  • step ST32, step ST33, step ST37, or step ST39 the signal processing circuit 100A performs the processing of step ST7 to step ST13 as in FIG.
  • the order in which each step ST is performed can be appropriately changed.
  • step ST38 and step ST39 may be performed at the same time, or step ST39 may be performed before step ST38.
  • step ST36 the drive current corresponding to the output gradation value SoGa1 is compared with the threshold current, but the present invention is not limited to this, and the reference gradation value SotGa corresponding to the threshold current is recorded to output the output gradation. It may be determined whether the adjustment value SoGa1 is equal to or lower than the reference gradation value SotGa.
  • the reference gradation value SotGa may be a value common to all the pixels Pix or may have a different value for each pixel Pix.
  • the first pixel group when the drive current supplied to the first green light emitting element 3Ga calculated based on the input gradation value Si of the first pixel group Pix1 is larger than the threshold current, the first pixel group The first green light emitting element 3Ga of Pix1 is turned on with an output gradation value (reference gradation value SotGa) lower than the gradation value SioGa1 corresponding to the input gradation value SiR, and the retained gradation value SorGa is retained.
  • an output gradation value reference gradation value SotGa
  • the held gradation value SorGa is added, so that the first green light emitting element 3Ga causes the gradation value SioGa2 corresponding to the input gradation value SiR. Lighting is performed with a higher output gradation value (gradation value SioGa2 + hold gradation value SorGa).
  • the driving that flows to the first green light emitting element 3Ga of the first pixel group Pix1 while maintaining the total emission intensity by the two first green light emitting elements 3Ga of the adjacent first pixel group Pix1 and second pixel group Pix2 The current can be suppressed. This can prevent the maximum emission wavelength of the spectrum SPG-3 of the light of the first green light emitting element 3Ga shown in FIG. 8, for example, from shifting away from the wavelength region of the red light emitting element 3R.
  • FIG. 14 is a flowchart for explaining a method of setting the output gradation value of each light emitting element according to the third modification.
  • the first processing circuit 110 performs the processing from step ST22 to step ST26 and the second processing circuit 120 performs the processing from step ST31 to step ST39, but the present invention is not limited to this.
  • the processing performed by the first processing circuit 110 and the second processing circuit 120 may be interchanged.
  • the first processing circuit 110 determines whether or not the memory 115 holds the held gradation value SorGa.
  • the description common to the second modification will be omitted.
  • the first processing circuit 110 takes in the input gradation value Si for one frame (step ST121) and determines whether or not the held gradation value SorGa is held in the memory 115 (step ST122). When the held gradation value SorGa is not held (step ST122, No), the first processing circuit 110 performs the same processing as steps ST2 to ST6 in FIG. Specifically, when the input gradation value SiR is 0 (No in step ST123), the input gradation value SiR is equal to or less than the first threshold value Lth, or the input gradation value SiR is the second threshold value.
  • the first processing circuit 110 sets the gradation value 0 as the output gradation value SoGa2 without passing through the second processing circuit 120 (steps ST124 and ST126). ). If the input gradation value SiR is larger than the first threshold value Lth and smaller than the second threshold value Hth (No in step ST125), the first processing circuit 110 causes the gradation based on the input gradation value SiR. The value SioGa is output to the second processing circuit 120 as the output gradation value SoGa1 (step ST127).
  • the first processing circuit 110 When the held gradation value SorGa is held in the memory 115 (step ST122, Yes), the first processing circuit 110 performs the same processing as steps ST123 to ST127 after adding the held gradation value SorGa. To do. Specifically, when the input gradation value SiR is 0 (No in step ST128), the input gradation value SiR is equal to or less than the first threshold value Lth, or the input gradation value SiR is the second threshold value. When the value is equal to or higher than the value Hth (Yes in step ST130), the first processing circuit 110 sets the held gradation value SorGa as the output gradation value SoGa2 without passing through the second processing circuit 120 (step ST129, step ST129). ST131).
  • the first processing circuit 110 causes the gradation based on the input gradation value SiR.
  • the value obtained by adding the held gradation value SorGa to the value SioGa is output to the second processing circuit 120 as the output gradation value SoGa1 (step ST132).
  • the second processing circuit 120 When the second processing circuit 120 receives the output gradation value SoGa1 from the first processing circuit 110 (step ST132, step ST127), the second processing circuit 120 performs the same processing as steps ST36 to ST39 in FIG. Specifically, the second processing circuit 120 determines whether the drive current corresponding to the output grayscale value SoGa1 is less than or equal to the threshold current (step ST133). When the drive current corresponding to the output gradation value SoGa1 is less than or equal to the threshold current (Yes in step ST133), the second processing circuit 120 sets the output gradation value SoGa1 as the output gradation value SoGa2 (step ST134). ).
  • the second processing circuit 120 determines the reference gradation value SotGa and the retained gradation based on the output gradation value SoGa1.
  • the reference gradation value SotGa is set as the output gradation value SoGa2 (step ST135), and the held gradation value SorGa is recorded in the memory 115 (step ST136).
  • step ST124 After the processing of step ST124, step ST126, step ST129, step ST131, step ST134, or step ST136 is completed, the signal processing circuit 100A performs the processing of step ST7 to step ST13 as in FIG.
  • the first processing circuit 110 processes whether or not the held gradation value SorGa is held, so that the second processing is performed in some steps ST (step ST124, step ST126, step ST129, step ST131).
  • the processing can be completed without passing through the circuit 120, and the processing can be simplified.
  • FIG. 15A to 15C are plan views showing modified examples of the arrangement pattern of each light emitting element in one pixel group.
  • the red light emitting element 3R, the first green light emitting element 3Ga, the second green light emitting element 3Gb, and the blue light emitting element 3B are arranged in one pixel Pix as shown in FIG.
  • the arrangement pattern of is not limited to this.
  • FIG. 15A is a plan view showing a first arrangement pattern of each light emitting element in one pixel group according to the fourth modification. As shown in FIG. 15A, in the first arrangement pattern AP1, the red light emitting element 3R and the first green light emitting element 3Ga are arranged in the second direction Dy.
  • the red light emitting element 3R and the second green light emitting element 3Gb are arranged in the first direction Dx.
  • the first green light emitting element 3Ga and the blue light emitting element 3B are arranged in the first direction Dx.
  • the second green light emitting element 3Gb and the blue light emitting element 3B are arranged in the second direction Dy.
  • the first green light emitting element 3Ga or the second green light emitting element 3Gb having a wavelength close to each other is preferably provided at a position adjacent to the red light emitting element 3R in the first direction Dx or the second direction Dy.
  • the red light emitting element 3R and the first green light emitting element 3Ga may be replaced with each other, or the second green light emitting element 3Gb and the blue light emitting element 3B may be replaced with each other.
  • the arrangement of the red light emitting element 3R and the first green light emitting element 3Ga may be interchanged, and the arrangement of the second green light emitting element 3Gb and the blue light emitting element 3B may be interchanged.
  • FIG. 15B is a plan view showing a second arrangement pattern of each light emitting element in one pixel group.
  • the red light emitting element 3R and the first green light emitting element 3Ga are arranged in the first direction Dx.
  • the red light emitting element 3R and the second green light emitting element 3Gb are arranged in the second direction Dy.
  • the first green light emitting element 3Ga and the blue light emitting element 3B are arranged in the second direction Dy.
  • the second green light emitting element 3Gb and the blue light emitting element 3B are arranged in the first direction Dx.
  • the red light emitting element 3R and the first green light emitting element 3Ga may be replaced with each other, or the second green light emitting element 3Gb and the blue light emitting element 3B may be replaced with each other.
  • the arrangement of the red light emitting element 3R and the first green light emitting element 3Ga may be interchanged, and the arrangement of the second green light emitting element 3Gb and the blue light emitting element 3B may be interchanged.
  • the first green light emitting element 3Ga or the second green light emitting element 3Gb having a wavelength close to each other is provided at a position adjacent to the red light emitting element 3R in the first direction Dx or the second direction Dy.
  • FIG. 15C is a plan view showing a third arrangement pattern of each light emitting element in one pixel group.
  • the red light emitting elements 3R and the blue light emitting elements 3B are arranged in the first direction Dx.
  • the red light emitting element 3R and the second green light emitting element 3Gb are arranged in the second direction Dy.
  • the blue light emitting element 3B and the first green light emitting element 3Ga are arranged in the second direction Dy.
  • the second green light emitting element 3Gb and the first green light emitting element 3Ga are arranged in the first direction Dx.
  • the red light emitting elements 3R and the first green light emitting elements 3Ga are arranged in an oblique direction that intersects both the first direction Dx and the second direction Dy.
  • the red light emitting element 3R and the first green light emitting element 3Ga may be replaced with each other, or the second green light emitting element 3Gb and the blue light emitting element 3B may be replaced with each other.
  • the arrangement of the red light emitting element 3R and the first green light emitting element 3Ga may be interchanged, and the arrangement of the second green light emitting element 3Gb and the blue light emitting element 3B may be interchanged.
  • the red light emitting element 3R and one of the second green light emitting element 3Gb or the blue light emitting element 3B are arranged in the first direction Dx, and the other of the red light emitting element 3R and the second green light emitting element 3Gb or the blue light emitting element 3B. And are arranged in the second direction Dy.
  • FIGS. 16A to 16C are plan views showing modified examples of the arrangement pattern of the light emitting elements 3 in the two pixel groups.
  • the arrangement pattern of each light emitting element 3 is described in the embodiment and the fourth modified example, when all the pixels Pix arranged in a matrix have this arrangement, each red light emitting element 3R, first green light emitting element 3Ga.
  • the second green light emitting element 3Gb and the blue light emitting element 3B are arranged in a fixed direction.
  • pixels such as the first green light emitting element 3Ga that are likely to be in a non-lighted state are arranged in one direction, they may be visually recognized as uneven streaks. Therefore, in the fifth modification, two types of pixels Pix having different layout patterns of the respective light emitting elements 3 are arranged. By doing so, it is possible to suppress the visual confirmation of uneven streaks.
  • FIG. 16A is a plan view showing a fourth arrangement pattern of light emitting elements in two pixel groups according to the fifth modification.
  • the four first pixel groups Pix1 and the second pixel group Pix2 arranged in the first direction Dx have different arrangements of the light emitting elements 3.
  • the first pixel group Pix1 on the left side of FIG. 16A has the same arrangement of the light emitting elements 3 as the first arrangement pattern AP1 shown in FIG. 15A
  • the second pixel group Pix2 on the right side of FIG. 16A is the red light emitting element of the first pixel group Pix1.
  • 3R and the first green light emitting element 3Ga are replaced with each other. In this way, the light emitting elements 3 may be arranged differently for each of the plurality of pixels Pix.
  • FIG. 16B is a plan view showing a fifth arrangement pattern of each light emitting element in two pixel groups.
  • the first pixel group Pix1 and the second pixel group Pix2 have the same arrangement of the light emitting elements 3 as the second arrangement pattern AP2 shown in FIG. 15B.
  • the arrangement of the red light emitting element 3R and the first green light emitting element 3Ga is exchanged, and the second green light emitting element 3Gb and blue are arranged.
  • the second pixel group Pix2 on the right side of FIG. 16B has a configuration in which the red light emitting element 3R and the first green light emitting element 3Ga of the first pixel group Pix1 are interchanged.
  • FIG. 16C is a plan view showing a sixth arrangement pattern of each light emitting element in two pixel groups.
  • the first pixel group Pix1 on the left side has the same arrangement of the light emitting elements 3 as the third arrangement pattern AP3 shown in FIG. 15C.
  • the second pixel group Pix2 on the right side of FIG. 16C has a configuration in which the red light emitting element 3R and the first green light emitting element 3Ga of the first pixel group Pix1 are interchanged.
  • FIG. 17 is a sectional view showing a red light emitting element according to the sixth modification.
  • the light emitting element 3 is not limited to the face-up structure, but may have a so-called face-down structure in which the lower portion of the light emitting element 3 is connected to the anode electrode 23 and the cathode electrode 22.
  • FIG. 17 shows a cross-sectional structure of the red light emitting element 3Ra of the light emitting element 3.
  • the red light emitting element 3Ra has a buffer layer 32, an n-type clad layer 33, a light emitting layer 34, a p-type clad layer 35, and a p-type electrode 36, which are laminated in this order on a transparent substrate 31. It The red light emitting element 3Ra is mounted so that the transparent substrate 31 is on the upper side and the p-type electrode 36 is on the lower side. Further, in the n-type cladding layer 33, a region exposed from the light emitting layer 34 is provided on the surface side facing the cathode electrode 22. The n-type electrode 38A is provided in this region.
  • the p-type electrode 36 is formed of a material having a metallic luster that reflects the light from the light emitting layer 34.
  • the p-type electrode 36 is connected to the anode electrode 23 via the bump 39A.
  • the n-type electrode 38A is connected to the cathode electrode 22 via the bump 39B.
  • the insulating film 97 covers the cathode electrode 22 and the anode electrode 23, and the bumps 39A and 39B are connected to the anode electrode 23 and the cathode electrode 22, respectively, at the openings of the insulating film 97.
  • the p-type cladding layer 35 (second p-type cladding layer 35b) and the n-type cladding layer 33 (second n-type cladding layer 33b) are not directly bonded to each other, but another layer (the light-emitting layer 34) is provided therebetween. ) Has been introduced. As a result, carriers such as electrons and holes can be concentrated in the light emitting layer 34, and efficient recombination (light emission) can be achieved. Also in this modification, gallium nitride (GaN) to which europium (Eu) is added is adopted as the light emitting layer 34 in the red light emitting element 3Ra. Further, in the red light emitting element 3Ra, a multiple quantum well structure (MQW structure) in which a well layer composed of several atomic layers and a barrier layer are periodically laminated is adopted as the light emitting layer 34.
  • MQW structure multiple quantum well structure
  • the light emitting layer 34 is laminated on the second p-type cladding layer 35b in the order of gallium nitride (GaN) to which europium (Eu) is added and the MQW structure.
  • MQW structure is configured for example, indium gallium nitride (In x Ga (1-x ) N) and gallium nitride (GaN) is a plurality of layers laminated repeatedly. Note that the order of stacking the gallium nitride (GaN) to which europium (Eu) is added and the MQW structure may be reversed. In addition, gallium nitride (GaN) to which europium (Eu) is added may be included in the MQW structure.
  • gallium nitride (GaN) doped with europium (Eu), indium gallium nitride (In x Ga (1-x) N), and gallium nitride (GaN) are repeatedly laminated in multiple layers. It may be configured.
  • the red light emitting element 3Ra has gallium nitride (GaN) to which europium (Eu) is added, the light emitting efficiency can be improved, and the half width of the spectrum SPR of light can be increased due to the MQW structure. can do.
  • FIG. 18 is a sectional view showing a red light emitting element according to the seventh modification.
  • the first light emitting layer 34a and the second light emitting layer 34b of the light emitting layer 34 are provided in the same layer.
  • the first light emitting layer 34a and the second light emitting layer 34b are provided adjacent to each other on the p-type cladding layer 35.
  • the upper surface of the first light emitting layer 34a and the upper surface of the second light emitting layer 34b are in contact with the n-type cladding layer 33, and the lower surface of the first light emitting layer 34a and the lower surface of the second light emitting layer 34b are in contact with the p type cladding layer 35.
  • the first light emitting layer 34a is gallium nitride (GaN) to which europium (Eu) is added.
  • the second light-emitting layer 34b is a MQW structure in which the indium gallium nitride (In x Ga (1-x ) N) and gallium nitride (GaN) has a plurality of layers laminated repeatedly.
  • FIG. 19 is a sectional view showing a red light emitting element according to the eighth modification.
  • the p-type cladding layer 35 has a third p-type cladding layer 35c.
  • the third p-type cladding layer 35c is provided between the first p-type cladding layer 35a and the p-type electrode 36.
  • the third p-type cladding layer 35c is gallium nitride (P + GaN) in which a high concentration impurity region is formed.
  • the light emitting layer 34 is provided between the third p-type cladding layer 35c, the first p-type cladding layer 35a and the second p-type cladding layer 35b, and the n-type cladding layer 33. Similar to the sixth modification, the light emitting layer 34 is formed by stacking gallium nitride (GaN) added with europium (Eu) and an MQW structure.
  • GaN gallium nitride
  • Eu europium
  • FIG. 20 is a sectional view showing a red light emitting element according to the ninth modification.
  • the red light emitting element 3Rd of the ninth modified example has a plurality of partial light emitting elements 3s as in FIG.
  • the p-type clad layer 35 of the red light emitting element 3Rd has a third p-type clad layer 35c.
  • the third p-type cladding layer 35c is gallium nitride (P + GaN) in which a high concentration impurity region is formed.
  • the third p-type cladding layer 35c is provided between the first p-type cladding layer 35a and the p-type electrode 37.
  • the light emitting layer 34 is provided between the third p-type clad layer 35c, the first p-type clad layer 35a and the second p-type clad layer 35b, and the n-type clad layer 33.
  • FIG. 21 is a sectional view showing a red light emitting element according to the tenth modification.
  • the first light emitting layer 34a and the second light emitting layer 34b of the light emitting layer 34 are stacked in this order on the p-type cladding layer 35. There is. The order of stacking the first light emitting layer 34a and the second light emitting layer 34b may be reversed.
  • the first light emitting layer 34a is gallium nitride (GaN) to which europium (Eu) is added.
  • the second light-emitting layer 34b is a MQW structure in which the indium gallium nitride (In x Ga (1-x ) N) and gallium nitride (GaN) has a plurality of layers laminated repeatedly.
  • the second light emitting layer 34b is not limited to the structure in which the second light emitting layer 34b is stacked on the first light emitting layer 34a.
  • the second light emitting layer 34b is included in the first light emitting layer 34a as in the sixth modification. May form part of the MQW structure.

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