WO2020066408A1 - Method of severing substrate provided with metal film - Google Patents

Method of severing substrate provided with metal film Download PDF

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Publication number
WO2020066408A1
WO2020066408A1 PCT/JP2019/033240 JP2019033240W WO2020066408A1 WO 2020066408 A1 WO2020066408 A1 WO 2020066408A1 JP 2019033240 W JP2019033240 W JP 2019033240W WO 2020066408 A1 WO2020066408 A1 WO 2020066408A1
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WO
WIPO (PCT)
Prior art keywords
substrate
metal film
break
cutting
dicing
Prior art date
Application number
PCT/JP2019/033240
Other languages
French (fr)
Japanese (ja)
Inventor
村上　健二
武田　真和
健太 田村
Original Assignee
三星ダイヤモンド工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三星ダイヤモンド工業株式会社 filed Critical 三星ダイヤモンド工業株式会社
Priority to CN201980062177.5A priority Critical patent/CN112740365B/en
Priority to KR1020217008964A priority patent/KR102557292B1/en
Priority to JP2020548196A priority patent/JP7418013B2/en
Publication of WO2020066408A1 publication Critical patent/WO2020066408A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B26—HAND CUTTING TOOLS; CUTTING; SEVERING
    • B26F—PERFORATING; PUNCHING; CUTTING-OUT; STAMPING-OUT; SEVERING BY MEANS OTHER THAN CUTTING
    • B26F3/00—Severing by means other than cutting; Apparatus therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/22—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
    • B28D1/225—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising for scoring or breaking, e.g. tiles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/22—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
    • B28D1/24—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising with cutting discs
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

Definitions

  • the present invention relates to the division of a semiconductor device substrate, and more particularly to the division of a substrate having a device pattern formed on one main surface and a metal film formed on the other main surface.
  • a scribe line is formed on one main surface of the semiconductor device substrate, and a scribe step of extending a vertical crack from the scribe line is performed.
  • a method of performing a break step of breaking a semiconductor device substrate by further extending the crack in the thickness direction of the substrate by applying an external force is already known (for example, see Patent Document 1).
  • the scribe line is formed by rolling a scribing wheel (cutter wheel) along a scheduled cutting position.
  • the break is performed by bringing the blade edge of a break blade (break bar) into contact with the semiconductor device substrate along the planned cutting position on the other main surface side of the semiconductor device substrate, and then further pushing the blade edge. .
  • the formation and break of the scribe lines are performed with an adhesive dicing tape adhered to the other main surface, and the facing cross sections are separated by an expanding step of extending the dicing tape after the break.
  • a device pattern in which a unit pattern of a semiconductor device including a semiconductor layer, an electrode, and the like is two-dimensionally repeated is formed on one main surface, and a metal film is formed on the other main surface.
  • a mother substrate is divided (individualized) into individual device units.
  • the metal film in the portion can be cut (ruptured) in the subsequent expanding step, but even if the cut is made, the metal film is peeled off at the cut portion. Is liable to occur.
  • Some of the above-described semiconductor device substrates have a TEG pattern including a metal film formed at a position to be divided at the time of singulation on one main surface side. From the viewpoint of division, it can be considered that such a substrate for semiconductor device has a metal film provided on both surfaces. There is also a need to suitably divide such a semiconductor device substrate.
  • the present invention has been made in view of the above problems, and has as its object to provide a method for suitably dividing a substrate with a metal film.
  • a first aspect of the present invention provides a base material, a thin film layer provided on a first main surface side of the base material, and a thin film layer provided on a second main surface of the base material.
  • the depth of the dicing groove to be formed is A
  • the width of the dicing groove is B
  • the dicing groove is formed so as to satisfy a relational expression of B> 2Atan ( ⁇ / 2) + C, thereby exposing the base material. Let me do it.
  • a metal pattern is provided at the position where the thin film layer is to be divided.
  • a radius of curvature of a tip end of the blade of the break bar is 5 ⁇ m to 30 ⁇ m. .
  • a plurality of the predetermined scheduled cutting positions are determined at a predetermined interval d1, and the first break step and the The second breaking step is performed at an equivalent position from each of the pair of holding portions in a state where the substrate with the metal film is supported from below by a pair of holding portions separated in the horizontal direction.
  • the dicing step, the scribe step, the first break step, and the second break step Is performed in a state in which an adhesive tape is stuck to the metal film, and in the first break step, a portion other than the metal film is divided and corresponds to the planned dividing position of the metal film and the adhesive tape. A fold is formed at the position.
  • the first breaking step includes changing a posture of the substrate with a metal film to the scribing step. Is performed upside down, and the second break step is performed by inverting the posture of the substrate with a metal film from the first break step.
  • the substrate with the metal film can be satisfactorily divided without causing the metal film to peel off.
  • a substrate with a metal film, in which a metal pattern is provided at a position where the thin film layer is to be divided is more preferably and reliably provided than a case where the thin film layer is directly scribed. Can be divided.
  • FIG. 2 is a side view schematically showing a configuration of a substrate (mother substrate) 10 to be divided in the method according to the embodiment. It is a figure which shows the mode before execution of a dicing process typically. It is a figure which shows the mode after execution of a dicing process typically. It is a figure showing typically a situation before execution of scribe processing.
  • FIG. 3 is a diagram for explaining a relationship between a shape of a dicing groove formed by a dicing process and a size of a scribing wheel used in a scribe process.
  • FIG. 9 is a diagram schematically illustrating a state during execution of a scribe process.
  • FIG. 9 is a diagram schematically illustrating a state before execution of a first break process.
  • FIG. 9 is a diagram schematically illustrating a state during execution of a first break process.
  • FIG. 9 is a diagram schematically illustrating a state after execution of a first break process. It is a figure showing typically a situation before execution of the 2nd break processing.
  • FIG. 14 is a diagram schematically illustrating a state during execution of a second break process.
  • FIG. 4 is a diagram schematically illustrating the substrate after performing a second break process.
  • FIG. 1 is a side view schematically illustrating a configuration of a substrate (mother substrate) 10 to be divided in the method according to the present embodiment.
  • substrate 10 is a board
  • the substrate 10 is formed on the base material 1 and on one main surface side of the base material 1, and a unit pattern of a semiconductor device including a semiconductor layer, an electrode, and the like is repeated two-dimensionally.
  • the substrate 10 can be said to be a substrate with a metal film.
  • the substrate 1 is a single crystal substrate such as SiC or Si or a polycrystalline substrate such as ceramics.
  • the material, thickness, plane size, and the like are appropriately selected and set according to the type, application, function, and the like of the semiconductor device to be manufactured.
  • Examples of such a substrate 1 include a SiC substrate having a thickness of about 100 ⁇ m to 600 ⁇ m and a diameter of 2 to 6 inches.
  • the device pattern 2 is a portion including a semiconductor layer, an insulating layer, an electrode, and the like, which is mainly involved in expressing functions and characteristics of a semiconductor device to be manufactured.
  • the specific configuration varies depending on the type of the semiconductor device, in the present embodiment, the thin film layer 2a formed on the entire one main surface of the base material 1 and the thin film layer 2a partially formed on the upper surface of the thin film layer 2a
  • the device pattern 2 is constituted by the electrodes 2b formed on the substrate 2 and a part of the thin film layer 2a is a TEG pattern 2t as one mode of a metal pattern (a pattern including a metal thin film). .
  • the thin film layer 2a may be a single layer or a multilayer
  • the electrode 2b may be a single layer electrode or a multilayer electrode.
  • a wiring or electrode pattern may be provided inside the thin film layer 2a.
  • a mode in which a part of the substrate 1 is exposed may be adopted.
  • a plurality of electrodes 2b may be provided in one unit pattern.
  • the material and size of the thin film layer 2a and the electrode 2b are appropriately selected and set according to the type, application, function, and the like of the semiconductor device to be manufactured.
  • the material of the thin film layer 2a excluding the metal part of the TEG pattern 2t includes a nitride (for example, GaN, AlN), an oxide (for example, Al 2 O 3 , SiO 2 ), for example, an intermetallic compound (for example, GaAs), An organic compound (for example, polyimide) is exemplified.
  • the material of the metal portion of the TEG pattern 2t and the material of the electrode 2b may be appropriately selected from general metal materials.
  • the thicknesses of the thin film layer 2a and the electrode 2b are generally smaller than the thickness of the substrate 1.
  • the TEG pattern 2t is formed so as to be used for evaluation (characteristic evaluation, failure analysis, etc.) of the semiconductor device at a stage before the substrate 10 is divided. In other words, it is an unnecessary pattern in the finally obtained semiconductor device.
  • the metal film 3 is assumed to be used mainly as a back electrode. However, in the present embodiment, it is assumed that such a metal film 3 is formed on the entire surface of the other main surface of the base material 1 (more specifically, at least straddling the planned dividing position). Like the electrode 2b, the metal film 3 may be a single layer or a multilayer.
  • the material of the metal film 3 is also a metal such as Ti, Ni, Al, Cu, Ag, Pd, Au, Pt or the like, like the electrode 2b. It may be appropriately selected from common electrode materials such as alloys. Further, the thickness of the metal film 3 is usually smaller than the thickness of the substrate 1.
  • the substrate 10 having the above-described configuration is cut in the thickness direction at the planned cutting position P set at a predetermined interval in at least a predetermined direction in the plane.
  • the planned dividing position P is considered as a virtual plane along the thickness direction of the substrate 10.
  • the planned division position P is determined such that the planned division position P is located at the position of the TEG pattern 2t on the one main surface side. More specifically, at the time of designing the substrate 10, the arrangement position of the TEG pattern 2 t on the one main surface side is determined in advance within a range of a predetermined width (street width) centering on the planned division position P.
  • the dividing positions may be determined at appropriate intervals in a direction perpendicular to the direction.
  • d1 is, for example, about 1.5 mm to 5 mm, and is at least 0.5 mm or more.
  • a dicing process (grooving process) is performed on the substrate 10.
  • the dicing process is a process of exposing the substrate 1 by partially removing the thin film layer 2a in order to use the substrate 1 as a scribing target in a subsequent scribe process. That is, the dicing process is positioned as a pre-process of the scribe process.
  • FIG. 2 is a diagram schematically showing a state before execution of the dicing process.
  • FIG. 3 is a diagram schematically illustrating a state after execution of the dicing process.
  • the dicing process is performed using a dicing device (dicer) 50.
  • the dicing device 50 includes a stage 51 on which a dicing target is placed, and a dicing blade 52 for dicing the dicing target from above.
  • the stage 51 has a horizontal upper surface as a mounting surface, and is configured such that a dicing object mounted on the mounting surface can be suction-fixed by suction means (not shown).
  • the stage 51 is capable of biaxial movement and rotation in a horizontal plane by a drive mechanism (not shown).
  • the dicing blade 52 is an annular member having a cutting edge 52e on the outer peripheral surface. At least the cutting edge 52e is formed of diamond. Although the cutting edge 52e can take various cross-sectional shapes according to the dicing target, FIG. 2 illustrates a cutting edge 52e having a predetermined cutting edge angle ⁇ and an isosceles triangular shape in cross section.
  • the dicing blade 52 is held above a stage 51 by a drive mechanism (not shown) provided to be able to move up and down in the vertical direction, and the drive mechanism allows the dicing blade 52 to move in a vertical plane parallel to one horizontal movement direction of the stage 51. And can be rotated.
  • the dicing process is performed after an adhesive dicing tape (expanded tape) 4 having a plane size larger than the plane size of the substrate 10 is attached to the metal film 3 side of the substrate 10 as shown in FIG.
  • an adhesive dicing tape (expanded tape) 4 having a plane size larger than the plane size of the substrate 10 is attached to the metal film 3 side of the substrate 10 as shown in FIG.
  • the state in which the dicing tape 4 is attached may be simply referred to as the substrate 10.
  • the dicing tape 4 a known tape having a thickness of about 80 ⁇ m to 150 ⁇ m (for example, 100 ⁇ m) can be applied.
  • the substrate 10 is placed on the stage 101 in such a manner that the dicing tape 4 is brought into contact with the placement surface of the stage 101, and is fixed by suction. That is, the substrate 10 is mounted and fixed on the stage 101 in a posture in which the device pattern 2 side faces upward. At this time, the dicing blade 52 is arranged at a height that does not make contact with the substrate 10.
  • the stage 51 is appropriately operated so that the scheduled cutting position P and the rotation surface including the cutting edge 52e of the dicing blade 52 are located in the same vertical plane. Positioning is performed. By performing such positioning, the cutting edge 52e of the dicing blade 52 is located above the device pattern side end Pa of the scheduled cutting position P as shown in FIG. More specifically, the device pattern side end Pa of the scheduled cutting position P is linear, and the positioning is performed such that the dicing blade 52 is positioned above one end side thereof.
  • the dicing blade 52 When the positioning is performed, the dicing blade 52 is rotated by a driving mechanism (not shown) at a predetermined rotational speed in a vertical plane, and the cutting edge 52e is scheduled to be divided as shown by an arrow AR0 in FIG. It is lowered vertically downward toward the device pattern side end Pa at the position P.
  • the dicing blade 52 comes into contact with the substrate 10, but after the contact, the dicing blade 52 is lowered by a predetermined distance while maintaining the rotating state.
  • the descending distance is set to be equal to or longer than the thickness of the thin film layer 2a.
  • the rotation speed of the dicing blade 52 and the moving speed (dicing speed) of the stage 101 in the dicing process may be appropriately determined as long as the above-described processing can be suitably performed.
  • the rotation speed of the dicing blade 52 may be about 30000 rpm to 40000 rpm (for example, 36000 rpm), and the dicing speed may be 5 mm / s to 60 mm / s (for example, 40 mm / s).
  • the specific size of the dicing groove dg formed in the dicing process needs to be in accordance with the size of the scribing wheel 102 used in the scribing process for the base material 1 which is a subsequent process. This will be described later.
  • FIG. 4 is a diagram schematically illustrating a state before execution of the scribe process.
  • FIG. 5 is a diagram for explaining the relationship between the shape of the dicing groove dg formed by the dicing process and the size of the scribing wheel 102 used in the scribe process.
  • FIG. 6 is a diagram schematically illustrating a state during execution of the scribe process.
  • the scribe process is performed using a scribe device 100 as shown in FIG.
  • the scribing apparatus 100 includes a stage 101 on which a scribing target is placed, and a scribing wheel 102 for scribing the scribing target from above.
  • the stage 101 has a horizontal upper surface as a placement surface, and is configured such that a scribing target placed on the placement surface can be suction-fixed by suction means (not shown).
  • the stage 101 is capable of biaxial movement and rotation in a horizontal plane by a drive mechanism (not shown).
  • the scribing wheel 102 is a disc-shaped member (scribing tool) having a diameter of 2 mm to 3 mm and having a cutting edge 102 e having an isosceles triangular cross section on the outer peripheral surface. At least the cutting edge 102e is formed of diamond. It is preferable that the angle (edge angle) ⁇ of the blade edge 102e is 100 ° to 150 ° (for example, 110 °).
  • the scribing wheel 102 is rotatably held in a vertical plane parallel to one of the horizontal movement directions of the stage 101 by holding means (not shown) provided above the stage 101 so as to be vertically movable.
  • a known device can be applied as the scribe device 100.
  • the scribing process is also performed after the dicing process, with the adhesive dicing tape (expanded tape) 4 having a plane size larger than the plane size of the substrate 10 attached to the metal film 3 side of the substrate 10.
  • the dicing tape 4 is placed on the stage 101 in such a manner that the dicing tape 4 is brought into contact with the placement surface of the stage 101, and is suction-fixed. I do. That is, the substrate 10 is mounted and fixed on the stage 101 in a posture in which the device pattern 2 side faces upward, as in the dicing process. At this time, the scribing wheel 102 is arranged at a height that does not make contact with the substrate 10.
  • the stage 101 is appropriately operated, so that the positioning is performed such that the scheduled cutting position P and the rotation surface of the scribing wheel 102 are located in the same vertical plane. .
  • the cutting edge 102 e of the scribing wheel 102 is positioned above the device pattern side end Pa ′ of the scheduled cutting position P. More specifically, the device pattern side end Pa ′ of the planned dividing position P is linear in the dicing groove dg, and the positioning is performed such that the scribing wheel 102 is positioned above one end side thereof. .
  • the scribing wheel 102 When the positioning is performed, the scribing wheel 102 is vertically moved by holding means (not shown) until the cutting edge 102e is pressed against the device pattern side end Pa ′ of the planned cutting position P as indicated by an arrow AR1 in FIG. It is lowered downward.
  • the dicing groove dg is formed in the dicing process prior to the scribe process so that such interference does not occur.
  • the depth of the dicing groove dg (distance from the upper surface of the thin film layer 2a of the dicing blade 52) is A, and the width of the dicing groove dg (the direction perpendicular to the dicing direction in a horizontal plane).
  • B) the scribe error (scribe accuracy) of the scribing wheel 102 is C, and the width of the scribing wheel 102 at a distance A from the cutting edge 102e of the scribing wheel 102 is w.
  • the value of B should be at most about 50 ⁇ m to 70 ⁇ m. According to the equation (3), it is not necessary to excessively increase the value of B. In the first place, the larger the value of B, the smaller the size of the individual piece obtained by the division. Therefore, it is not realistic to increase the value of B excessively.
  • the load (scribe load) applied by the cutting edge 102e to the substrate 10 at the time of press contact in the scribing process, and the moving speed (scribe speed) of the stage 101 are different from those of the constituent materials of the substrate 10, especially of the base material 1. It may be appropriately determined depending on the material, thickness, and the like. For example, if the substrate 1 is made of SiC, the scribe load may be about 1 N to 10 N (for example, 3.5 N), and the scribe speed may be 100 mm / s to 300 mm / s (for example, 100 mm / s). I just need.
  • the scribing wheel 102 When such pressure contact is performed, the scribing wheel 102 is moved in the direction in which the device pattern side end Pa ′ at the scheduled cutting position P extends (the direction perpendicular to the drawing in FIG. 4) while maintaining the pressure contact state. . Thus, the scribing wheel 102 is relatively rolled in the direction (toward the other end of the device pattern side end Pa ').
  • a scribe line SL is formed at a position where the scribing wheel 102 is pressed.
  • the vertical cracks VC extend (penetrate) vertically downward from the scribe line SL along the planned dividing position P. It is preferable that the vertical crack VC extends at least to the middle of the substrate 1 from the viewpoint that the division is finally performed well.
  • the formation of the vertical cracks VC by the scribing process is performed at all the scheduled cutting positions P.
  • scribing is performed by bringing the scribing wheel 102 into contact with the thin film layer 2a.
  • a metal pattern such as the TEG pattern 2t is formed at the planned dividing position P
  • the penetration amount of the vertical cracks VC extending (penetrating) from the thin film layer 2a toward the substrate 1 becomes unstable. Occurs.
  • a defect may occur during a break process in a subsequent process.
  • the substrate 1 is exposed by removing the metal pattern such as the TEG pattern 2t by the dicing process, and the scribing process is performed on the substrate 1.
  • the permeation amount of the vertical cracks VC in the base material 1 is stabilized as compared with the case where the scribe processing is performed while the thin film layer 2a is left.
  • the effect of suppressing the occurrence of defects in the break processing can be obtained. That is, it is possible to divide the substrate 10 better and more reliably than when the thin film layer 2a is directly scribed.
  • FIG. 7 is a diagram schematically illustrating a state before execution of the first break processing.
  • FIG. 8 is a diagram schematically illustrating a state during execution of the first break processing.
  • FIG. 9 is a diagram schematically illustrating a state after the execution of the first break processing.
  • the break device 200 includes a holding unit 201 on which a break target is placed, and a break bar 202 for performing a break process.
  • the holding unit 201 includes a pair of unit holding units 201a and 201b.
  • the unit holding parts 201a and 201b are provided to be separated from each other by a predetermined distance (separation distance) d2 in the horizontal direction, and the horizontal upper surfaces of the two at the same height position constitute one break target as a whole. Used as a mounting surface for In other words, the break target is placed on the holding unit 201 with a part thereof being exposed downward.
  • the holding unit 201 is made of, for example, metal.
  • the holding unit 201 is configured so that a pair of unit holding units 201a and 201b can approach and separate from each other in one predetermined direction (holding unit moving direction) in a horizontal plane. That is, in the break device 200, the separation distance d2 is variable.
  • the left-right direction in the drawing is the holding unit advance / retreat direction.
  • a drive mechanism (not shown) enables an alignment operation of a break target placed on the placement surface in a horizontal plane.
  • the break bar 202 is a plate-shaped metal (for example, a cemented carbide) member provided with a cutting edge 202e having an isosceles triangular cross section in a cross-sectional view and extending in a cutting direction.
  • FIG. 7 shows the break bar 202 so that the blade length direction is perpendicular to the drawing.
  • the angle ⁇ of the blade edge 202e (blade angle) is 5 ° to 90 °, and preferably 5 ° to 30 ° (for example, 15 °).
  • Such a preferable cutting edge angle ⁇ is smaller than 60 ° to 90 ° which is the cutting angle of the break bar used in the conventional general break processing.
  • the tip end of the cutting edge 202e is a minute curved surface having a radius of curvature of about 5 ⁇ m to 30 ⁇ m (for example, 15 ⁇ m). Such a radius of curvature is also smaller than the radius of curvature of a break bar used in conventional general break processing, which is 50 ⁇ m to 100 ⁇ m.
  • the break bar 202 is held by a holding means (not shown) above a middle position (an equivalent position) between the pair of unit holding portions 201a and 201b in the holding portion moving direction and in a vertical plane perpendicular to the holding portion moving direction. It is provided to be able to move up and down in the vertical direction.
  • the first break process using the break device 200 having the above-described configuration includes the surface on the device pattern 2 side of the substrate 10 after the scribe process with the dicing tape 4 attached. This is performed after attaching the protective film 5 in a mode of covering the side portions.
  • the substrate having the protective film 5 attached thereto may be simply referred to as the substrate 10.
  • the protective film 5 a known film having a thickness of about 10 ⁇ m to 75 ⁇ m (for example, 25 ⁇ m) can be applied.
  • the substrate 10 is placed on the holding unit 201 in such a manner that the protective film 5 is brought into contact with the mounting surface of the holding unit 201. That is, the substrate 10 is placed on the holding unit 201 in a posture in which the device pattern 2 side is downward and the metal film 3 side is upward, that is, in a posture that is upside down from the time of the scribe processing. At this time, the break bar 202 is arranged at a height that does not make contact with the substrate 10.
  • the separation distance d2 is equal to the spacing (pitch) d1 of the scheduled cutting positions P of the substrate 10.
  • the substrate 10 is positioned by operating the drive mechanism appropriately. Specifically, in the scribing process, the extending direction of the scheduled cutting position P of the substrate 10 provided with the scribe line SL and the vertical crack VC is made to coincide with the blade extending direction of the break bar 202. By performing such positioning, the cutting edge 202e of the break bar 202 is positioned above the metal film side end Pb of the planned cutting position P, as shown in FIG.
  • the break bar 202 is directed toward the metal film side end portion Pb (more specifically, the upper surface of the dicing tape 4) at the cutting position P at which the cutting edge 202e is to be cut. Down vertically.
  • the break bar 202 is lowered by a predetermined distance even after the cutting edge 202e comes into contact with the metal film side end Pb of the planned cutting position P. That is, it is pushed into the substrate 10 by a predetermined pushing amount. It is preferable that the pushing amount is 0.05 mm to 0.2 mm (for example, 0.1 mm).
  • the cutting edge 202 e of the break bar 202 is used as a point of action with respect to the substrate 10, and the inner ends f (fa, fb) of the mounting surfaces of the pair of unit holders 201 a, 201 b.
  • a three-point bending situation with the fulcrum as a fulcrum occurs.
  • tensile stress acts on the substrate 10 in two opposite directions, and as a result, the vertical crack VC is further extended, and the substrate 1 and the device pattern 2 is once separated into two right and left portions, and a gap G is formed between the two portions.
  • the metal film 3 does not reach the separation at this point, but is merely bent by pushing the cutting edge 202e. That is, when the break bar 202 is pushed, the bent portion B is formed on the metal film 3 and the dicing tape 4 located between the cutting edge 202 e and the metal film 3.
  • the gap G is closed and the cross section D where the ends of the left and right portions abut is formed.
  • the bent portion B remains in the metal film 3 and the dicing tape 4.
  • the bent portion B is a portion where the material strength is weaker than the other flat metal film 3. Such a bent portion B is visually recognized as a fold.
  • the first break process performed in the above-described manner surely causes the substrate 1 and the device pattern 2 to be separated from each other, and also reliably forms a bent portion B that can be visually recognized as a fold in the metal film 3. It is intended to be As a condition for suitably realizing these, in the first break processing, unlike the general break processing, the separation distance d2 between the pair of unit holding units 201a and 201b is set to be equal to the distance d1 of the scheduled dividing position P.
  • the radius of curvature of the tip portion of the cutting edge 202e is 5 ⁇ m to 30 ⁇ m. Further, it is preferable that the edge angle ⁇ is 5 ° to 30 °.
  • FIG. 10 is a diagram schematically showing a state before execution of the second break processing.
  • FIG. 11 is a diagram schematically showing a state during execution of the second break processing.
  • FIG. 12 is a diagram schematically illustrating the substrate 10 after the second break processing is performed.
  • the substrate 10 is mounted on the holding unit 201 in a state where the dicing tape 4 is in contact with the mounting surface of the holding unit 201 with the 201a and 201b arranged. That is, the substrate 10 is placed on the holding unit 201 in a posture that is upside down from that in the first break processing.
  • d1 is, for example, about 2.11 mm to 2.36 mm
  • d2 is 3.165 mm to 3.54 mm.
  • it is sufficient that d2 1.0 d1 to 1.75 d1.
  • d2 in the second break processing is made larger than d2 in the first break processing.
  • the break bar 202 is arranged at a height that does not make contact with the substrate 10.
  • the substrate 10 is positioned by operating the drive mechanism appropriately. Specifically, the extending directions of the dividing plane D and the bent part B are made to coincide with the blade extending direction of the break bar 202. At this time, the visible bent portion B formed on the metal film 3 can be effectively used as an index for alignment.
  • the cutting edge 202 e of the break bar 202 is positioned above the upper end of the dividing section D, which was originally the device pattern side end Pa ′ of the planned cutting position P. Will do.
  • the break bar 202 is attached to the device pattern side end Pa ′ (more specifically, the upper surface of the protective film 5) at the position P at which the cutting edge 202e is to be divided. It is lowered vertically downward.
  • the lowering of the break bar 202 is performed until the cutting edge 202e pushes the substrate 1 exposed in the dicing groove dg through the protective film 5 by a predetermined pushing amount as shown in FIG.
  • the device pattern 2 and the substrate 1 are already divided into two, and a force is applied to the section D from above.
  • tensile stress acts on the metal film 3 in two opposite directions below the dividing plane D.
  • the bent portion B of the metal film 3 is weaker in material strength than other portions, finally, as shown in FIG. Then, a state in which the bent portion B remains only in the dicing tape 4 by being divided at the dicing tape D is easily and reliably realized.
  • the dicing tape 4 After the end of the second break processing, as shown by an arrow AR7 in FIG. 12, by applying a tensile stress to the dicing tape 4 in the in-plane direction, the dicing tape 4 is expanded, and the substrate 10 By the way, it is separated into two parts 10A and 10B. Thus, the substrate 10 is divided into two.
  • a semiconductor device substrate having a device pattern on one main surface of a base material and a metal film on the other main surface, which is to be divided on the device pattern side Even if a metal pattern such as a TEG pattern is formed at a position, the cutting can be performed satisfactorily and reliably.
  • the scribing process is performed by the scribing wheel. It may be a mode of forming.
  • the vertical crack VC has already been formed in the base material 1 and the bent portion B has been formed in the metal film 3, so that in the second break step, the same as the conventional cutting process is performed.
  • a break bar having a cutting edge angle ⁇ and a radius of curvature at the tip may be used.
  • the dicing process is performed using the dicing blade 52, but the dicing groove may be formed by laser irradiation or the like.
  • the break device used in the first break step and the second break step includes a holding unit 201 including a pair of unit holding units 201a and 201b separated by a predetermined distance in the horizontal direction.
  • a break device provided with a holding portion made of an elastic body that contacts and holds the entire surface of the substrate may be used.
  • the pushing amount in the first break process is 0.05 mm to 0.2 mm (for example, 0.1 mm), and the pushing amount in the second break process is 0, which is about half the pushing amount in the first break process. It is preferably between 0.02 mm and 0.1 mm (eg 0.05 mm).

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Abstract

Provided is a method that is capable of suitably severing a substrate provided with a metal film. This method of severing a substrate provided with a metal film includes: a dicing step of dicing a first major surface side of a substrate having a thin film layer at a specific intended severing position to expose the substrate; a scribing step of forming a scribe line by scribing the exposed substrate and extending a vertical crack from the scribe line toward the inside of the substrate along the intended severing position; a first breaking step of further extending the vertical crack by abutting a breaking bar against the substrate from a second major surface side having a metal film to sever portions of the substrate other than the metal film at the intended severing position; and a second breaking step of severing the metal film at the intended severing position by abutting the breaking bar against the substrate from the first major surface side.

Description

メタル膜付き基板の分断方法Cutting method of substrate with metal film
　本発明は、半導体デバイス用基板の分断に関し、特に、一方主面にデバイスパターンが形成され、他方主面にメタル膜が形成された基板の分断に関する。 The present invention relates to the division of a semiconductor device substrate, and more particularly to the division of a substrate having a device pattern formed on one main surface and a metal film formed on the other main surface.
　例えばＳｉＣ（炭化硅素）基板などの半導体デバイス用基板を分断する手法として、半導体デバイス用基板の一方主面にスクライブラインを形成し、該スクライブラインから垂直クラックを伸展させるスクライブ工程を行った後、外力の印加によって係るクラックを基板厚み方向にさらに伸展させることにより半導体デバイス用基板をブレークするブレーク工程を行う、という手法がすでに公知である（例えば、特許文献１参照）。 As a method of dividing a semiconductor device substrate such as a SiC (silicon carbide) substrate, for example, a scribe line is formed on one main surface of the semiconductor device substrate, and a scribe step of extending a vertical crack from the scribe line is performed. A method of performing a break step of breaking a semiconductor device substrate by further extending the crack in the thickness direction of the substrate by applying an external force is already known (for example, see Patent Document 1).
　スクライブラインの形成は、スクライビングホイール（カッターホイール）を分断予定位置に沿って圧接転動させることにより行われる。 The scribe line is formed by rolling a scribing wheel (cutter wheel) along a scheduled cutting position.
　ブレークは、半導体デバイス用基板の他方主面側において、ブレーク刃（ブレークバー）の刃先を分断予定位置に沿って半導体デバイス用基板に当接させたうえで、該刃先をさらに押し込むことによって行われる。 The break is performed by bringing the blade edge of a break blade (break bar) into contact with the semiconductor device substrate along the planned cutting position on the other main surface side of the semiconductor device substrate, and then further pushing the blade edge. .
　また、これらスクライブラインの形成およびブレークは、他方主面に粘着性を有するダイシングテープを貼り付けた状態で行われ、ブレーク後に係るダイシングテープを伸張させるエキスパンド工程によって対向する分断面が離隔させられる。 The formation and break of the scribe lines are performed with an adhesive dicing tape adhered to the other main surface, and the facing cross sections are separated by an expanding step of extending the dicing tape after the break.
　半導体デバイス用基板の分断の一態様として、一方主面に半導体層や電極などを含む半導体デバイスの単位パターンが２次元的に繰り返されたデバイスパターンが形成され、他方主面にメタル膜が形成された母基板を、個々のデバイス単位に分断する（個片化する）というものがある。 As one mode of dividing the semiconductor device substrate, a device pattern in which a unit pattern of a semiconductor device including a semiconductor layer, an electrode, and the like is two-dimensionally repeated is formed on one main surface, and a metal film is formed on the other main surface. There is a method in which a mother substrate is divided (individualized) into individual device units.
　係る分断を、特許文献１に開示されているような従来の手法で行う場合、ブレーク工程後に、メタル膜が分断されるべき箇所において完全に分断されず連続したままとなっている、いわば薄皮残りともいえるような状態が発生することがある。 When such cutting is performed by a conventional method as disclosed in Patent Literature 1, after the break step, the metal film remains continuous without being completely cut at a place where the metal film is to be cut, so-called thin skin residue Such a situation may occur.
　なお、このような薄皮残りの部分が生じたとしても、その後のエキスパンド工程によって当該部分のメタル膜は分断（破断）され得るが、仮に分断がなされたとしても、係る分断箇所においてメタル膜の剥がれが発生しやすいという問題がある。 In addition, even if such a thin-skin remaining portion occurs, the metal film in the portion can be cut (ruptured) in the subsequent expanding step, but even if the cut is made, the metal film is peeled off at the cut portion. Is liable to occur.
　また、上述のような半導体デバイス用基板のなかには、一方主面側における個片化時の分断予定位置に、メタル膜を含むＴＥＧパターンが形成されているものがある。係る半導体デバイス用基板は、分断という観点からみれば、両面にメタル膜が設けられたものと捉えることが出来る。そして、このような半導体用デバイス基板についても、好適に分断を行いたいというニーズがある。 が あ る Some of the above-described semiconductor device substrates have a TEG pattern including a metal film formed at a position to be divided at the time of singulation on one main surface side. From the viewpoint of division, it can be considered that such a substrate for semiconductor device has a metal film provided on both surfaces. There is also a need to suitably divide such a semiconductor device substrate.
特開２０１２－１４６８７９号公報JP 2012-146879 A
　本発明は上記課題に鑑みてなされたものであり、メタル膜付き基板を好適に分断できる方法を提供することを目的とする。 The present invention has been made in view of the above problems, and has as its object to provide a method for suitably dividing a substrate with a metal film.
　上記課題を解決するため、本発明の第１の態様は、基材と、前記基材の第１の主面側に設けられた薄膜層と、前記基材の第２の主面に設けられたメタル膜とを備える、メタル膜付き基板を分断する方法が、前記第１の主面側を所定の分断予定位置においてダイシングすることにより、前記基材を露出させるダイシング工程と、前記ダイシング工程によって露出した前記基材をスクライビングツールによってスクライブすることによりスクライブラインを形成し、前記スクライブラインから前記分断予定位置に沿って前記基材の内部に対し垂直クラックを伸展させるスクライブ工程と、前記第２の主面側から前記メタル膜付き基板に対しブレークバーを当接させることによって前記垂直クラックをさらに伸展させることで、前記メタル膜付き基板の前記メタル膜以外の部分を前記分断予定位置において分断する第１ブレーク工程と、前記第１の主面側から前記メタル膜付き基板に対し前記ブレークバーを当接させることによって前記メタル膜を前記分断予定位置において分断する第２ブレーク工程と、を備えるようにした。 In order to solve the above problems, a first aspect of the present invention provides a base material, a thin film layer provided on a first main surface side of the base material, and a thin film layer provided on a second main surface of the base material. A dicing step of exposing the base material by dicing the first main surface side at a predetermined dividing scheduled position, the dicing step comprising: Forming a scribe line by scribing the exposed base material with a scribing tool, and extending a vertical crack from the scribe line to the inside of the base material along the scheduled cutting position; and The vertical cracks are further extended by bringing a break bar into contact with the substrate with the metal film from the main surface side, so that the metal film is attached. A first break step of cutting a portion of the plate other than the metal film at the expected cutting position; and contacting the break bar with the metal film-attached substrate from the first main surface side to thereby form the metal film. And a second break step of dividing at the planned dividing position.
　本発明の第２の態様は、第１の態様に係るメタル膜付き基板の分断方法において、前記ダイシング工程においては、形成されるダイシング溝の深さをＡ、前記ダイシング溝の幅をＢ、前記スクライビングツールのスクライブ誤差をＣ、前記スクライビングツールの刃先角をδとするとき、Ｂ＞２Ａtan（δ／２）＋Ｃなる関係式をみたすように前記ダイシング溝を形成することによって、前記基材を露出させる、ようにした。 According to a second aspect of the present invention, in the method for dividing a substrate with a metal film according to the first aspect, in the dicing step, the depth of the dicing groove to be formed is A, the width of the dicing groove is B, When the scribing error of the scribing tool is C and the edge angle of the scribing tool is δ, the dicing groove is formed so as to satisfy a relational expression of B> 2Atan (δ / 2) + C, thereby exposing the base material. Let me do it.
　本発明の第３の態様は、第１または第２の態様に係るメタル膜付き基板の分断方法において、前記薄膜層の前記分断予定位置に金属パターンが設けられてなる、ようにした。 According to a third aspect of the present invention, in the method for dividing a substrate provided with a metal film according to the first or second aspect, a metal pattern is provided at the position where the thin film layer is to be divided.
　本発明の第４の態様は、第１ないし第３の態様のいずれかに係るメタル膜付き基板の分断方法において、前記ブレークバーの刃先先端部の曲率半径が５μｍ～３０μｍである、ようにした。 According to a fourth aspect of the present invention, in the cutting method of a substrate with a metal film according to any one of the first to third aspects, a radius of curvature of a tip end of the blade of the break bar is 5 μm to 30 μm. .
　本発明の第５の態様は、第４の態様に係るメタル膜付き基板の分断方法において、前記所定の分断予定位置が所定の間隔ｄ１にて複数定められており、前記第１ブレーク工程および前記第２ブレーク工程は、水平方向において離隔する一対の保持部によって前記メタル膜付き基板を下方から支持した状態で、前記一対の保持部のそれぞれから等価な位置において行うようにし、前記一対の保持部の離隔距離ｄ２を、前記第１ブレーク工程においてはｄ２＝０．５ｄ１～１．２５ｄ１とし、前記第２ブレーク工程においてはｄ２＝１．０ｄ１～１．７５ｄ１とする、ようにした。 According to a fifth aspect of the present invention, in the method for dividing a substrate with a metal film according to the fourth aspect, a plurality of the predetermined scheduled cutting positions are determined at a predetermined interval d1, and the first break step and the The second breaking step is performed at an equivalent position from each of the pair of holding portions in a state where the substrate with the metal film is supported from below by a pair of holding portions separated in the horizontal direction. Is set to d2 = 0.5d1 to 1.25d1 in the first break step, and d2 = 1.0d1 to 1.75d1 in the second break step.
　本発明の第６の態様は、第１ないし第５の態様のいずれかに係るメタル膜付き基板の分断方法において、前記ダイシング工程、前記スクライブ工程、前記第１ブレーク工程、および前記第２ブレーク工程を、前記メタル膜に粘着性テープを貼付した状態で行い、前記第１ブレーク工程においては、前記メタル膜以外の部分を分断するとともに前記メタル膜および前記粘着性テープの前記分断予定位置に相当する位置に折り目を形成する、ようにした。 According to a sixth aspect of the present invention, in the method for cutting a substrate with a metal film according to any one of the first to fifth aspects, the dicing step, the scribe step, the first break step, and the second break step Is performed in a state in which an adhesive tape is stuck to the metal film, and in the first break step, a portion other than the metal film is divided and corresponds to the planned dividing position of the metal film and the adhesive tape. A fold is formed at the position.
　本発明の第７の態様は、第１ないし第６の態様のいずれかに係るメタル膜付き基板の分断方法において、前記第１ブレーク工程は、前記メタル膜付き基板の姿勢を前記スクライブ工程のときとは上下反転させて行い、前記第２ブレーク工程は、前記メタル膜付き基板の姿勢を前記第１ブレーク工程のときとは上下反転させて行う、ようにした。 According to a seventh aspect of the present invention, in the method for dividing a substrate with a metal film according to any one of the first to sixth aspects, the first breaking step includes changing a posture of the substrate with a metal film to the scribing step. Is performed upside down, and the second break step is performed by inverting the posture of the substrate with a metal film from the first break step.
　本発明の第１ないし第７の態様によれば、メタル膜に剥がれを生じさせることなく、メタル膜付き基板を良好に分断することができる。 According to the first to seventh aspects of the present invention, the substrate with the metal film can be satisfactorily divided without causing the metal film to peel off.
　特に、第３の態様によれば、薄膜層の分断予定位置に金属パターンが設けられてなるメタル膜付き基板について、薄膜層を直接にスクライブする場合よりも良好にかつ確実に、メタル膜付き基板を分断することができる。 In particular, according to the third aspect, a substrate with a metal film, in which a metal pattern is provided at a position where the thin film layer is to be divided, is more preferably and reliably provided than a case where the thin film layer is directly scribed. Can be divided.
実施の形態に係る方法における分断の対象である基板（母基板）１０の構成を模式的に示す側面図である。FIG. 2 is a side view schematically showing a configuration of a substrate (mother substrate) 10 to be divided in the method according to the embodiment. ダイシング処理の実行前の様子を模式的に示す図である。It is a figure which shows the mode before execution of a dicing process typically. ダイシング処理の実行後の様子を模式的に示す図である。It is a figure which shows the mode after execution of a dicing process typically. スクライブ処理の実行前の様子を模式的に示す図である。It is a figure showing typically a situation before execution of scribe processing. ダイシング処理によって形成されるダイシング溝の形状と、スクライブ処理において用いるスクライビングホイールのサイズとの関係を説明するための図である。FIG. 3 is a diagram for explaining a relationship between a shape of a dicing groove formed by a dicing process and a size of a scribing wheel used in a scribe process. スクライブ処理の実行中の様子を模式的に示す図である。FIG. 9 is a diagram schematically illustrating a state during execution of a scribe process. 第１ブレーク処理の実行前の様子を模式的に示す図である。FIG. 9 is a diagram schematically illustrating a state before execution of a first break process. 第１ブレーク処理の実行中の様子を模式的に示す図である。FIG. 9 is a diagram schematically illustrating a state during execution of a first break process. 第１ブレーク処理の実行後の様子を模式的に示す図である。FIG. 9 is a diagram schematically illustrating a state after execution of a first break process. 第２ブレーク処理の実行前の様子を模式的に示す図である。It is a figure showing typically a situation before execution of the 2nd break processing. 第２ブレーク処理の実行中の様子を模式的に示す図である。FIG. 14 is a diagram schematically illustrating a state during execution of a second break process. 第２ブレーク処理を実行後の基板１０を模式的に示す図である。FIG. 4 is a diagram schematically illustrating the substrate after performing a second break process.
　　＜半導体用デバイス基板＞
　図１は、本実施の形態に係る方法における分断の対象である基板（母基板）１０の構成を模式的に示す側面図である。基板１０は、その分断により得られる個片がそれぞれに半導体デバイスをなすことが予定されている半導体デバイス用基板である。本実施の形態においては、係る基板１０が、基材１と、該基材１の一方主面側に形成されてなり、半導体層や電極などを含む半導体デバイスの単位パターンが２次元的に繰り返されたデバイスパターン２と、基材１の他方主面側に形成されてなるメタル膜３とを有するものとする。換言すれば、基板１０は、メタル膜付き基板といえる。 <Semiconductor device substrate>
FIG. 1 is a side view schematically illustrating a configuration of a substrate (mother substrate) 10 to be divided in the method according to the present embodiment. The board | substrate 10 is a board | substrate for semiconductor devices in which the piece obtained by the division | segmentation is going to form a semiconductor device each. In the present embodiment, the substrate 10 is formed on the base material 1 and on one main surface side of the base material 1, and a unit pattern of a semiconductor device including a semiconductor layer, an electrode, and the like is repeated two-dimensionally. Device pattern 2 and a metal film 3 formed on the other main surface side of the substrate 1. In other words, the substrate 10 can be said to be a substrate with a metal film.
　基材１は、ＳｉＣやＳｉなどの単結晶またはセラミックスなどの多結晶の基板である。その材質や、厚みおよび平面サイズなどは、作製しようとする半導体デバイスの種類、用途、機能等に応じて適宜に選択・設定される。係る基材１としては、例えば、厚みが１００μｍ～６００μｍ程度の、２～６インチ径のＳｉＣ基板などが例示される。 The substrate 1 is a single crystal substrate such as SiC or Si or a polycrystalline substrate such as ceramics. The material, thickness, plane size, and the like are appropriately selected and set according to the type, application, function, and the like of the semiconductor device to be manufactured. Examples of such a substrate 1 include a SiC substrate having a thickness of about 100 μm to 600 μm and a diameter of 2 to 6 inches.
　デバイスパターン２は、作製対象たる半導体デバイスにおいてその機能や特性の発現に主に関わる、半導体層、絶縁層、電極などを含む部位である。その具体的構成は、半導体デバイスの種類によって様々であるが、本実施の形態においては、基材１の一方主面の全面に形成された薄膜層２ａと、該薄膜層２ａの上面に部分的に形成された電極２ｂとによってデバイスパターン２が構成されており、かつ、薄膜層２ａの一部が、金属パターン（金属薄膜を含むパターン）の一態様としてのＴＥＧパターン２ｔである場合を想定する。ここで、薄膜層２ａは単層であっても多層であってもよく、電極２ｂについても単層電極であっても多層電極であってもよい。また、薄膜層２ａの内部に配線や電極のパターンが設けられていてもよい。さらには、薄膜層２ａが基材１の全面を覆う代わりに、基材１の一部が露出する態様であってもよい。あるいはまた、１つの単位パターンに電極２ｂが複数設けられていてもよい。 (4) The device pattern 2 is a portion including a semiconductor layer, an insulating layer, an electrode, and the like, which is mainly involved in expressing functions and characteristics of a semiconductor device to be manufactured. Although the specific configuration varies depending on the type of the semiconductor device, in the present embodiment, the thin film layer 2a formed on the entire one main surface of the base material 1 and the thin film layer 2a partially formed on the upper surface of the thin film layer 2a It is assumed that the device pattern 2 is constituted by the electrodes 2b formed on the substrate 2 and a part of the thin film layer 2a is a TEG pattern 2t as one mode of a metal pattern (a pattern including a metal thin film). . Here, the thin film layer 2a may be a single layer or a multilayer, and the electrode 2b may be a single layer electrode or a multilayer electrode. Further, a wiring or electrode pattern may be provided inside the thin film layer 2a. Further, instead of the thin film layer 2a covering the entire surface of the substrate 1, a mode in which a part of the substrate 1 is exposed may be adopted. Alternatively, a plurality of electrodes 2b may be provided in one unit pattern.
　薄膜層２ａと電極２ｂの材質やサイズは、作製しようとする半導体デバイスの種類、用途、機能等に応じて適宜に選択・設定される。例えば、ＴＥＧパターン２ｔの金属部分を除く薄膜層２ａの材質としては、窒化物（例えばＧａＮ、ＡｌＮ）、酸化物（例えばＡｌ２Ｏ３、ＳｉＯ２）、例えば、金属間化合物（例えばＧａＡｓ）、有機化合物（例えばポリイミド）などが例示される。ＴＥＧパターン２ｔの金属部分および電極２ｂの材質は、一般的な金属材料から適宜に選択されてよい。例えば、Ｔｉ、Ｎｉ、Ａｌ、Ｃｕ、Ａｇ、Ｐｄ、Ａｕ、Ｐｔなどの金属や、それらの合金などが例示される。また、薄膜層２ａおよび電極２ｂの厚みは通常、基材１の厚みに比して小さい。 The material and size of the thin film layer 2a and the electrode 2b are appropriately selected and set according to the type, application, function, and the like of the semiconductor device to be manufactured. For example, the material of the thin film layer 2a excluding the metal part of the TEG pattern 2t includes a nitride (for example, GaN, AlN), an oxide (for example, Al 2 O 3 , SiO 2 ), for example, an intermetallic compound (for example, GaAs), An organic compound (for example, polyimide) is exemplified. The material of the metal portion of the TEG pattern 2t and the material of the electrode 2b may be appropriately selected from general metal materials. For example, metals such as Ti, Ni, Al, Cu, Ag, Pd, Au, and Pt, and alloys thereof are exemplified. Further, the thicknesses of the thin film layer 2a and the electrode 2b are generally smaller than the thickness of the substrate 1.
　ＴＥＧパターン２ｔは、基板１０の分断前の段階における半導体デバイスの評価（特性評価、不良解析等）に使用するべく、形成されてなるものである。換言すれば、最終的に得られる半導体デバイスにおいては不要なパターンである。 The TEG pattern 2t is formed so as to be used for evaluation (characteristic evaluation, failure analysis, etc.) of the semiconductor device at a stage before the substrate 10 is divided. In other words, it is an unnecessary pattern in the finally obtained semiconductor device.
　メタル膜３は、主として裏面電極としての使用が想定されるものである。ただし、本実施の形態では、係るメタル膜３が、基材１の他方主面の全面に（より詳細には、少なくとも分断予定位置を跨がって）形成されてなるものとする。メタル膜３も、電極２ｂと同様、単層でも多層であってもよく、その材質も電極２ｂと同様、Ｔｉ、Ｎｉ、Ａｌ、Ｃｕ、Ａｇ、Ｐｄ、Ａｕ、Ｐｔなどの金属や、それらの合金など、一般的な電極材料から適宜に選択されてよい。また、メタル膜３の厚みも通常、基材１の厚みに比して小さい。 (4) The metal film 3 is assumed to be used mainly as a back electrode. However, in the present embodiment, it is assumed that such a metal film 3 is formed on the entire surface of the other main surface of the base material 1 (more specifically, at least straddling the planned dividing position). Like the electrode 2b, the metal film 3 may be a single layer or a multilayer. The material of the metal film 3 is also a metal such as Ti, Ni, Al, Cu, Ag, Pd, Au, Pt or the like, like the electrode 2b. It may be appropriately selected from common electrode materials such as alloys. Further, the thickness of the metal film 3 is usually smaller than the thickness of the substrate 1.
　本実施の形態においては、以上のような構成の基板１０が、少なくとも面内の所定の方向において所定の間隔にて定められた分断予定位置Ｐにおいて厚み方向に分断されるものとする。分断予定位置Ｐは、基板１０の厚み方向に沿った仮想面として観念される。ただし、本実施の形態に係る基板１０においては、一方主面側におけるＴＥＧパターン２ｔの配置位置に分断予定位置Ｐが位置するように、分断予定位置Ｐが定められるものとする。より詳細には、基板１０の設計時点であらかじめ、一方主面側におけるＴＥＧパターン２ｔの配置位置が、分断予定位置Ｐを中心とする所定幅（ストリート幅）の範囲内に定められる。 In the present embodiment, it is assumed that the substrate 10 having the above-described configuration is cut in the thickness direction at the planned cutting position P set at a predetermined interval in at least a predetermined direction in the plane. The planned dividing position P is considered as a virtual plane along the thickness direction of the substrate 10. However, in the substrate 10 according to the present embodiment, the planned division position P is determined such that the planned division position P is located at the position of the TEG pattern 2t on the one main surface side. More specifically, at the time of designing the substrate 10, the arrangement position of the TEG pattern 2 t on the one main surface side is determined in advance within a range of a predetermined width (street width) centering on the planned division position P.
　これに加えて、平面視矩形状の半導体デバイスを得るべく、当該方向に直交する方向においても適宜の間隔にて分断予定位置が定められてよい。 に In addition, in order to obtain a semiconductor device having a rectangular shape in a plan view, the dividing positions may be determined at appropriate intervals in a direction perpendicular to the direction.
　なお、図１には、図面視左右方向において間隔（ピッチ）ｄ１で互いに離隔する３つの分断予定位置Ｐを、基板１０を超えて延在する一点鎖線として示しているが、実際には、一方向についてさらに多くの分断予定位置Ｐが規定されてよい。ｄ１は例えば１．５ｍｍ～５ｍｍ程度であり、少なくとも０．５ｍｍ以上である。 In FIG. 1, three planned dividing positions P separated from each other at a distance (pitch) d1 in the horizontal direction in the drawing are shown as dashed lines extending beyond the substrate 10, but actually, More scheduled dividing positions P may be defined for the direction. d1 is, for example, about 1.5 mm to 5 mm, and is at least 0.5 mm or more.
　　＜ダイシング処理＞
　以降、本実施の形態に係る分断方法において基板１０に対して実施する分断処理の具体的内容につき、順次に説明する。 <Dicing process>
Hereinafter, specific contents of the dividing process performed on the substrate 10 in the dividing method according to the present embodiment will be sequentially described.
　まずは、基板１０に対しダイシング処理（溝入れ処理）を行う。ダイシング処理は、後工程であるスクライブ処理におけるスクライブ対象を基材１とするために、薄膜層２ａを部分的に除去して基材１を露出させる処理である。すなわち、ダイシング処理は、スクライブ処理の前処理として位置付けられる。 First, a dicing process (grooving process) is performed on the substrate 10. The dicing process is a process of exposing the substrate 1 by partially removing the thin film layer 2a in order to use the substrate 1 as a scribing target in a subsequent scribe process. That is, the dicing process is positioned as a pre-process of the scribe process.
　図２は、ダイシング処理の実行前の様子を模式的に示す図である。図３は、ダイシング処理の実行後の様子を模式的に示す図である。 FIG. 2 is a diagram schematically showing a state before execution of the dicing process. FIG. 3 is a diagram schematically illustrating a state after execution of the dicing process.
　図２に示すように、本実施の形態において、ダイシング処理は、ダイシング装置（ダイサー）５０を用いて行う。ダイシング装置５０は、ダイシング対象物が載置されるステージ５１と、ダイシング対象物を上方からダイシングするダイシングブレード５２とを備える。 As shown in FIG. 2, in the present embodiment, the dicing process is performed using a dicing device (dicer) 50. The dicing device 50 includes a stage 51 on which a dicing target is placed, and a dicing blade 52 for dicing the dicing target from above.
　ステージ５１は、水平な上面を被載置面として有し、係る被載置面に載置されたダイシング対象物を図示しない吸引手段によって吸引固定できるように構成されている。また、ステージ５１は、図示しない駆動機構によって水平面内における二軸移動動作や回転動作が可能とされている。 The stage 51 has a horizontal upper surface as a mounting surface, and is configured such that a dicing object mounted on the mounting surface can be suction-fixed by suction means (not shown). The stage 51 is capable of biaxial movement and rotation in a horizontal plane by a drive mechanism (not shown).
　一方、ダイシングブレード５２は、外周面に刃先５２ｅを有する円環状の部材である。少なくとも刃先５２ｅはダイヤモンドにて形成されてなる。刃先５２ｅはダイシング対象物に応じて種々の断面形状を取り得るが、図２においては、所定の刃先角αを有する断面視二等辺三角形状の刃先５２ｅを例示している。係るダイシングブレード５２は、ステージ５１の上方において、鉛直方向に昇降可能に設けられた図示しない駆動機構により保持され、かつ、係る駆動機構によって、ステージ５１の一方の水平移動方向と平行な鉛直面内において回転可能とされてなる。 On the other hand, the dicing blade 52 is an annular member having a cutting edge 52e on the outer peripheral surface. At least the cutting edge 52e is formed of diamond. Although the cutting edge 52e can take various cross-sectional shapes according to the dicing target, FIG. 2 illustrates a cutting edge 52e having a predetermined cutting edge angle α and an isosceles triangular shape in cross section. The dicing blade 52 is held above a stage 51 by a drive mechanism (not shown) provided to be able to move up and down in the vertical direction, and the drive mechanism allows the dicing blade 52 to move in a vertical plane parallel to one horizontal movement direction of the stage 51. And can be rotated.
　以上のような機能を有するのであれば、ダイシング装置５０としては、公知のものを適用可能である。 公 知 A known device can be applied as the dicing device 50 as long as it has the functions described above.
　ダイシング処理は、図２に示すように、基板１０のメタル膜３側に、基板１０の平面サイズよりも大きな平面サイズを有する粘着性のダイシングテープ（エキスパンドテープ）４を貼付したうえで行う。なお、以降の説明においては、係るダイシングテープ４を貼付した状態のものについても、単に基板１０と称することがある。ダイシングテープ４には、厚みが８０μｍ～１５０μｍ程度（例えば１００μｍ）の公知のものを適用可能である。 (2) The dicing process is performed after an adhesive dicing tape (expanded tape) 4 having a plane size larger than the plane size of the substrate 10 is attached to the metal film 3 side of the substrate 10 as shown in FIG. In the following description, the state in which the dicing tape 4 is attached may be simply referred to as the substrate 10. As the dicing tape 4, a known tape having a thickness of about 80 μm to 150 μm (for example, 100 μm) can be applied.
　具体的には、まず、図２に示すように、係るダイシングテープ４をステージ１０１の被載置面と接触させる態様にて基板１０をステージ１０１上に載置し、吸引固定する。すなわち、基板１０は、デバイスパターン２の側が上方を向く姿勢にて、ステージ１０１に載置固定される。このとき、ダイシングブレード５２は、基板１０とは接触しない高さに配置されている。 (2) Specifically, first, as shown in FIG. 2, the substrate 10 is placed on the stage 101 in such a manner that the dicing tape 4 is brought into contact with the placement surface of the stage 101, and is fixed by suction. That is, the substrate 10 is mounted and fixed on the stage 101 in a posture in which the device pattern 2 side faces upward. At this time, the dicing blade 52 is arranged at a height that does not make contact with the substrate 10.
　基板１０の固定がなされると、続いて、ステージ５１を適宜に動作させることにより、分断予定位置Ｐとダイシングブレード５２の刃先５２ｅを含む回転面とが同一の鉛直面内に位置するように、位置決めがなされる。係る位置決めを行うことにより、図２に示すように、ダイシングブレード５２の刃先５２ｅが、分断予定位置Ｐのデバイスパターン側端部Ｐａの上方に位置することになる。より詳細には、分断予定位置Ｐのデバイスパターン側端部Ｐａは直線状となっており、位置決めは、その一方端部側の上方にダイシングブレード５２が位置するように行われる。 When the substrate 10 is fixed, subsequently, the stage 51 is appropriately operated so that the scheduled cutting position P and the rotation surface including the cutting edge 52e of the dicing blade 52 are located in the same vertical plane. Positioning is performed. By performing such positioning, the cutting edge 52e of the dicing blade 52 is located above the device pattern side end Pa of the scheduled cutting position P as shown in FIG. More specifically, the device pattern side end Pa of the scheduled cutting position P is linear, and the positioning is performed such that the dicing blade 52 is positioned above one end side thereof.
　係る位置決めがなされると、ダイシングブレード５２は、図示しない駆動機構によって、鉛直面内にて所定の回転数にて回転させられながら、図２において矢印ＡＲ０にて示すように、刃先５２ｅが分断予定位置Ｐのデバイスパターン側端部Ｐａに向けて鉛直下方に下降させられる。 When the positioning is performed, the dicing blade 52 is rotated by a driving mechanism (not shown) at a predetermined rotational speed in a vertical plane, and the cutting edge 52e is scheduled to be divided as shown by an arrow AR0 in FIG. It is lowered vertically downward toward the device pattern side end Pa at the position P.
　やがて、ダイシングブレード５２は基板１０と接触するが、係る接触の後も引き続き、回転状態を保ちつつ所定距離だけ下降させられる。係る下降の距離は、薄膜層２ａの厚みと同一あるいはそれ以上に設定される。そして、係る下降がなされると、ステージ５１が水平移動することにより、ダイシングブレード５２は、分断予定位置Ｐのデバイスパターン側端部Ｐａの延在方向（図２においては図面に垂直な方向）において、相対的に移動させられる。より詳細には、デバイスパターン側端部Ｐａの他方端部に向けて相対移動させられる。 Then, the dicing blade 52 comes into contact with the substrate 10, but after the contact, the dicing blade 52 is lowered by a predetermined distance while maintaining the rotating state. The descending distance is set to be equal to or longer than the thickness of the thin film layer 2a. When the lowering is performed, the stage 51 moves horizontally, so that the dicing blade 52 moves in the direction in which the device pattern side end Pa of the planned cutting position P extends (the direction perpendicular to the drawing in FIG. 2). , Are relatively moved. More specifically, it is relatively moved toward the other end of the device pattern side end Pa.
　すると、回転するダイシングブレード５２の（相対）移動に伴い、薄膜層２ａのうち、ＴＥＧパターン２ｔを含む、分断予定位置Ｐに沿った所定幅の部分が、所定の深さにて切削除去される。これにより、図３に示すような、分断予定位置Ｐに関して対称な形状のダイシング溝ｄｇが、順次に形成される。換言すれば、係るダイシング処理によって、薄膜層２ａに被覆されていた基材１の一部が露出することになる。なお、ダイシングブレード５２の下降距離によっては、基材１の一部についても除去されることもある。図３においては、そのような場合を例示している。 Then, along with the (relative) movement of the rotating dicing blade 52, a portion of the thin film layer 2a having a predetermined width including the TEG pattern 2t along the planned cutting position P is cut and removed at a predetermined depth. . As a result, dicing grooves dg having a symmetrical shape with respect to the planned dividing position P as shown in FIG. 3 are sequentially formed. In other words, by the dicing process, a part of the base material 1 covered with the thin film layer 2a is exposed. Note that, depending on the descending distance of the dicing blade 52, a part of the substrate 1 may be removed. FIG. 3 illustrates such a case.
　ダイシング処理におけるダイシングブレード５２の回転速度や、ステージ１０１の移動速度（ダイシング速度）は、上述した加工が好適に行える範囲で、適宜に定められてよい。例えば、ダイシングブレード５２の回転速度は３００００ｒｐｍ～４００００ｒｐｍ程度（例えば３６０００ｒｐｍ）であればよく、ダイシング速度は５ｍｍ／ｓ～６０ｍｍ／ｓ（例えば４０ｍｍ／ｓ）であればよい。 The rotation speed of the dicing blade 52 and the moving speed (dicing speed) of the stage 101 in the dicing process may be appropriately determined as long as the above-described processing can be suitably performed. For example, the rotation speed of the dicing blade 52 may be about 30000 rpm to 40000 rpm (for example, 36000 rpm), and the dicing speed may be 5 mm / s to 60 mm / s (for example, 40 mm / s).
　ただし、ダイシング処理にて形成するダイシング溝ｄｇの具体的なサイズは、後工程である、基材１を対象としたスクライブ処理に用いるスクライビングホイール１０２のサイズに応じたものとする必要がある。この点については後述する。 However, the specific size of the dicing groove dg formed in the dicing process needs to be in accordance with the size of the scribing wheel 102 used in the scribing process for the base material 1 which is a subsequent process. This will be described later.
　ダイシング処理によるダイシング溝ｄｇの形成は、全ての分断予定位置Ｐについて行われる。 形成 The formation of the dicing groove dg by the dicing process is performed at all the planned cutting positions P.
　　＜スクライブ処理＞
　以上のような態様にてダイシング処理がなされると、続いて、ダイシング溝ｄｇにおいて露出している基材１の分断予定位置Ｐを対象に、スクライブ処理が実行される。図４は、スクライブ処理の実行前の様子を模式的に示す図である。図５は、ダイシング処理によって形成されるダイシング溝ｄｇの形状と、スクライブ処理において用いるスクライビングホイール１０２のサイズとの関係を説明するための図である。図６は、スクライブ処理の実行中の様子を模式的に示す図である。 <Scribe processing>
When the dicing process is performed in the manner described above, subsequently, the scribing process is performed on the scheduled cutting position P of the base material 1 exposed in the dicing groove dg. FIG. 4 is a diagram schematically illustrating a state before execution of the scribe process. FIG. 5 is a diagram for explaining the relationship between the shape of the dicing groove dg formed by the dicing process and the size of the scribing wheel 102 used in the scribe process. FIG. 6 is a diagram schematically illustrating a state during execution of the scribe process.
　本実施の形態において、スクライブ処理は、図４に示すようなスクライブ装置１００を用いて行う。スクライブ装置１００は、スクライブ対象物が載置されるステージ１０１と、スクライブ対象物を上方からスクライブするスクライビングホイール１０２とを備える。 に お い て In the present embodiment, the scribe process is performed using a scribe device 100 as shown in FIG. The scribing apparatus 100 includes a stage 101 on which a scribing target is placed, and a scribing wheel 102 for scribing the scribing target from above.
　ステージ１０１は、水平な上面を被載置面として有し、係る被載置面に載置されたスクライブ対象物を図示しない吸引手段によって吸引固定できるように構成されている。また、ステージ１０１は、図示しない駆動機構によって水平面内における二軸移動動作や回転動作が可能とされている。 The stage 101 has a horizontal upper surface as a placement surface, and is configured such that a scribing target placed on the placement surface can be suction-fixed by suction means (not shown). The stage 101 is capable of biaxial movement and rotation in a horizontal plane by a drive mechanism (not shown).
　一方、スクライビングホイール１０２は、外周面に断面視二等辺三角形状の刃先１０２ｅを有する、直径が２ｍｍ～３ｍｍの円板状の部材（スクライビングツール）である。少なくとも刃先１０２ｅはダイヤモンドにて形成されてなる。また、刃先１０２ｅの角度（刃先角）δは１００°～１５０°（例えば１１０°）であるのが好適である。係るスクライビングホイール１０２は、ステージ１０１の上方に、鉛直方向に昇降可能に設けられた図示しない保持手段により、ステージ１０１の一方の水平移動方向と平行な鉛直面内において回転自在に保持されてなる。 On the other hand, the scribing wheel 102 is a disc-shaped member (scribing tool) having a diameter of 2 mm to 3 mm and having a cutting edge 102 e having an isosceles triangular cross section on the outer peripheral surface. At least the cutting edge 102e is formed of diamond. It is preferable that the angle (edge angle) δ of the blade edge 102e is 100 ° to 150 ° (for example, 110 °). The scribing wheel 102 is rotatably held in a vertical plane parallel to one of the horizontal movement directions of the stage 101 by holding means (not shown) provided above the stage 101 so as to be vertically movable.
　以上のような機能を有するのであれば、スクライブ装置１００としては、公知のものを適用可能である。 As long as it has the functions described above, a known device can be applied as the scribe device 100.
　スクライブ処理も、ダイシング処理に引き続き、基板１０のメタル膜３側に、基板１０の平面サイズよりも大きな平面サイズを有する粘着性のダイシングテープ（エキスパンドテープ）４を貼付した状態で行う。 The scribing process is also performed after the dicing process, with the adhesive dicing tape (expanded tape) 4 having a plane size larger than the plane size of the substrate 10 attached to the metal film 3 side of the substrate 10.
　具体的には、まず、図４に示すように、係るダイシングテープ４をステージ１０１の被載置面と接触させる態様にて、ダイシング処理後の基板１０をステージ１０１上に載置し、吸引固定する。すなわち、基板１０は、ダイシング処理のときと同様、デバイスパターン２の側が上方を向く姿勢にて、ステージ１０１に載置固定される。このとき、スクライビングホイール１０２は、基板１０とは接触しない高さに配置されている。 More specifically, first, as shown in FIG. 4, the dicing tape 4 is placed on the stage 101 in such a manner that the dicing tape 4 is brought into contact with the placement surface of the stage 101, and is suction-fixed. I do. That is, the substrate 10 is mounted and fixed on the stage 101 in a posture in which the device pattern 2 side faces upward, as in the dicing process. At this time, the scribing wheel 102 is arranged at a height that does not make contact with the substrate 10.
　基板１０の固定がなされると、続いて、ステージ１０１を適宜に動作させることにより、分断予定位置Ｐとスクライビングホイール１０２の回転面とが同一の鉛直面内に位置するように、位置決めがなされる。係る位置決めを行うことにより、図４に示すように、スクライビングホイール１０２の刃先１０２ｅが、分断予定位置Ｐのデバイスパターン側端部Ｐａ’の上方に位置することになる。より詳細には、分断予定位置Ｐのデバイスパターン側端部Ｐａ’はダイシング溝ｄｇにおいて直線状となっており、位置決めは、その一方端部側の上方にスクライビングホイール１０２が位置するように行われる。 When the substrate 10 is fixed, subsequently, the stage 101 is appropriately operated, so that the positioning is performed such that the scheduled cutting position P and the rotation surface of the scribing wheel 102 are located in the same vertical plane. . By performing such positioning, as shown in FIG. 4, the cutting edge 102 e of the scribing wheel 102 is positioned above the device pattern side end Pa ′ of the scheduled cutting position P. More specifically, the device pattern side end Pa ′ of the planned dividing position P is linear in the dicing groove dg, and the positioning is performed such that the scribing wheel 102 is positioned above one end side thereof. .
　係る位置決めがなされると、スクライビングホイール１０２は、図示しない保持手段によって、図４において矢印ＡＲ１にて示すように、刃先１０２ｅが分断予定位置Ｐのデバイスパターン側端部Ｐａ’に圧接されるまで鉛直下方に下降させられる。 When the positioning is performed, the scribing wheel 102 is vertically moved by holding means (not shown) until the cutting edge 102e is pressed against the device pattern side end Pa ′ of the planned cutting position P as indicated by an arrow AR1 in FIG. It is lowered downward.
　このとき、ダイシング溝ｄｇのサイズが小さすぎると、スクライビングホイール１０２の側面がダイシング溝ｄｇの端部と干渉し、刃先１０２ｅの先端がデバイスパターン側端部Ｐａ’に到達しなくなってしまう。それゆえ、本実施の形態においては、係る干渉が生じることのないように、スクライブ処理に先立つダイシング処理において、ダイシング溝ｄｇを形成する。 At this time, if the size of the dicing groove dg is too small, the side surface of the scribing wheel 102 interferes with the end of the dicing groove dg, and the tip of the cutting edge 102e does not reach the device pattern side end Pa ′. Therefore, in the present embodiment, the dicing groove dg is formed in the dicing process prior to the scribe process so that such interference does not occur.
　具体的には、図５に示すように、ダイシング溝ｄｇの深さ（ダイシングブレード５２の薄膜層２ａ上面からの下降距離）をＡ、ダイシング溝ｄｇの幅（水平面内においてダイシング方向に垂直な方向のサイズ）をＢ、スクライビングホイール１０２のスクライブ誤差（スクライブ精度）をＣ、スクライビングホイール１０２の刃先１０２ｅから距離Ａの位置におけるスクライビングホイール１０２の幅をｗとするとき、スクライビングホイール１０２とダイシング溝ｄｇとが干渉しないためには、
　　　Ｂ＞ｗ＋Ｃ　　　・・・・・（１）
であることが必要である。 Specifically, as shown in FIG. 5, the depth of the dicing groove dg (distance from the upper surface of the thin film layer 2a of the dicing blade 52) is A, and the width of the dicing groove dg (the direction perpendicular to the dicing direction in a horizontal plane). B), the scribe error (scribe accuracy) of the scribing wheel 102 is C, and the width of the scribing wheel 102 at a distance A from the cutting edge 102e of the scribing wheel 102 is w. To avoid interference,
B> w + C (1)
It is necessary to be.
　ここで、刃先角δを用いると、
　　　ｗ＝２Ａtan（δ／２）　　　・・・・・（２）
と表される。（２）式を（１）式に代入すると、
　　　Ｂ＞２Ａtan（δ／２）＋Ｃ　　　・・・・・（３）
　係る（３）式をみたすように、ダイシング溝ｄｇを設けた場合には、スクライビングホイール１０２とダイシング溝ｄｇとの干渉を生じさせることなく、スクライブ処理を行うことが出来る。 Here, using the edge angle δ,
w = 2Atan (δ / 2) (2)
It is expressed as Substituting equation (2) into equation (1) gives
B> 2Atan (δ / 2) + C (3)
When the dicing groove dg is provided so as to satisfy the expression (3), the scribe processing can be performed without causing interference between the scribing wheel 102 and the dicing groove dg.
　なお、スクライビングホイール１０２の刃先角δが１１０°である場合において、Ａの値を５μｍ～１０μｍ程度とする場合、Ｂの値はせいぜい５０μｍ～７０μｍ程度であれば十分である。（３）式に照らせば、Ｂの値を過度に大きくする必要はない。そもそも、Ｂの値を大きくするほど、分断によって得られる個片のサイズが小さくなってしまうため、Ｂの値を過度に大きくすることは現実的ではない。 In the case where the cutting edge angle δ of the scribing wheel 102 is 110 °, if the value of A is about 5 μm to 10 μm, the value of B should be at most about 50 μm to 70 μm. According to the equation (3), it is not necessary to excessively increase the value of B. In the first place, the larger the value of B, the smaller the size of the individual piece obtained by the division. Therefore, it is not realistic to increase the value of B excessively.
　スクライブ処理における圧接の際に刃先１０２ｅが基板１０に対して印加する荷重（スクライブ荷重）や、ステージ１０１の移動速度（スクライブ速度）は、基板１０の構成材料の、なかでも特に基材１の、材質や厚みなどによって適宜に定められてよい。例えば、基材１がＳｉＣからなる場合であれば、スクライブ荷重は１Ｎ～１０Ｎ程度（例えば３．５Ｎ）であればよく、スクライブ速度は１００ｍｍ／ｓ～３００ｍｍ／ｓ（例えば１００ｍｍ／ｓ）であればよい。 The load (scribe load) applied by the cutting edge 102e to the substrate 10 at the time of press contact in the scribing process, and the moving speed (scribe speed) of the stage 101 are different from those of the constituent materials of the substrate 10, especially of the base material 1. It may be appropriately determined depending on the material, thickness, and the like. For example, if the substrate 1 is made of SiC, the scribe load may be about 1 N to 10 N (for example, 3.5 N), and the scribe speed may be 100 mm / s to 300 mm / s (for example, 100 mm / s). I just need.
　係る圧接がなされると、この圧接状態を維持したまま、スクライビングホイール１０２が分断予定位置Ｐのデバイスパターン側端部Ｐａ’の延在方向（図４においては図面に垂直な方向）に移動される。これにより、スクライビングホイール１０２は相対的に、当該方向に（デバイスパターン側端部Ｐａ’の他方端部に向けて）転動させられる。 When such pressure contact is performed, the scribing wheel 102 is moved in the direction in which the device pattern side end Pa ′ at the scheduled cutting position P extends (the direction perpendicular to the drawing in FIG. 4) while maintaining the pressure contact state. . Thus, the scribing wheel 102 is relatively rolled in the direction (toward the other end of the device pattern side end Pa ').
　そして、係る態様にてデバイスパターン側端部Ｐａ’に沿ったスクライビングホイール１０２の圧接転動が進行すると、図６に示すように、スクライビングホイール１０２が圧接された箇所においてスクライブラインＳＬが形成されていくとともに、係るスクライブラインＳＬから分断予定位置Ｐに沿って鉛直下方に、垂直クラックＶＣが伸展（浸透）する。最終的に分断が良好になされるという点からは、垂直クラックＶＣは少なくとも基材１の中ほどにまで伸展するのが好ましい。 When the rolling of the scribing wheel 102 along the device pattern side end Pa ′ proceeds in such a manner, as shown in FIG. 6, a scribe line SL is formed at a position where the scribing wheel 102 is pressed. At the same time, the vertical cracks VC extend (penetrate) vertically downward from the scribe line SL along the planned dividing position P. It is preferable that the vertical crack VC extends at least to the middle of the substrate 1 from the viewpoint that the division is finally performed well.
　係るスクライブ処理による垂直クラックＶＣの形成は、全ての分断予定位置Ｐにおいて行われる。 The formation of the vertical cracks VC by the scribing process is performed at all the scheduled cutting positions P.
　なお、ダイシング処理を行わず、薄膜層２ａを残したままスクライブ処理を行うことも可能ではある。係る場合、薄膜層２ａにスクライビングホイール１０２を当接させてスクライブを行うことになる。しかしながら、ＴＥＧパターン２ｔのような金属パターンが分断予定位置Ｐに形成されてなる場合、薄膜層２ａから基材１に向けて伸展（浸透）する垂直クラックＶＣの浸透量が不安定となるという問題が生じる。基材１において垂直クラックＶＣが十分に伸展（浸透）しない箇所が生じた結果として、後工程であるブレーク処理に際して不良が発生することがある。 In addition, it is also possible to perform the scribe processing without leaving the thin film layer 2a without performing the dicing processing. In such a case, scribing is performed by bringing the scribing wheel 102 into contact with the thin film layer 2a. However, when a metal pattern such as the TEG pattern 2t is formed at the planned dividing position P, the penetration amount of the vertical cracks VC extending (penetrating) from the thin film layer 2a toward the substrate 1 becomes unstable. Occurs. As a result of a portion of the base material 1 where the vertical crack VC does not sufficiently extend (penetrate), a defect may occur during a break process in a subsequent process.
　これに対し、本実施の形態においては、ダイシング処理によってＴＥＧパターン２ｔのような金属パターンを除去して基材１を露出させ、係る基材１を対象にスクライブ処理を行うようにしているので、薄膜層２ａを残したままスクライブ処理を行う場合に比して、基材１における垂直クラックＶＣの浸透量が安定する。結果として、ブレーク処理における不良の発生が抑制されるという効果が得られる。すなわち、薄膜層２ａを直接にスクライブする場合よりも良好かつ確実に、基板１０を分断することが可能となっている。 On the other hand, in the present embodiment, the substrate 1 is exposed by removing the metal pattern such as the TEG pattern 2t by the dicing process, and the scribing process is performed on the substrate 1. The permeation amount of the vertical cracks VC in the base material 1 is stabilized as compared with the case where the scribe processing is performed while the thin film layer 2a is left. As a result, the effect of suppressing the occurrence of defects in the break processing can be obtained. That is, it is possible to divide the substrate 10 better and more reliably than when the thin film layer 2a is directly scribed.
　　＜第１ブレーク処理＞
　上述のように垂直クラックＶＣが形成された基板１０は、続いて、第１ブレーク処理に供される。図７は、第１ブレーク処理の実行前の様子を模式的に示す図である。図８は、第１ブレーク処理の実行中の様子を模式的に示す図である。図９は、第１ブレーク処理の実行後の様子を模式的に示す図である。 <First break processing>
The substrate 10 on which the vertical crack VC has been formed as described above is subsequently subjected to a first break process. FIG. 7 is a diagram schematically illustrating a state before execution of the first break processing. FIG. 8 is a diagram schematically illustrating a state during execution of the first break processing. FIG. 9 is a diagram schematically illustrating a state after the execution of the first break processing.
　本実施の形態において、第１ブレーク処理は、ブレーク装置２００を用いて行う。ブレーク装置２００は、ブレーク対象物が載置される保持部２０１と、ブレーク処理を担うブレークバー２０２とを備える。 に お い て In the present embodiment, the first break processing is performed using the break device 200. The break device 200 includes a holding unit 201 on which a break target is placed, and a break bar 202 for performing a break process.
　保持部２０１は、一対の単位保持部２０１ａと２０１ｂとからなる。単位保持部２０１ａと２０１ｂは、水平方向において所定の距離（離隔距離）ｄ２にて互いに離隔させて設けられてなり、同じ高さ位置とされた両者の水平な上面が全体として一のブレーク対象物の被載置面として用いられる。換言すれば、ブレーク対象物は、一部を下方に露出させた状態で、保持部２０１上に載置される。保持部２０１は例えば金属にて構成される。 (4) The holding unit 201 includes a pair of unit holding units 201a and 201b. The unit holding parts 201a and 201b are provided to be separated from each other by a predetermined distance (separation distance) d2 in the horizontal direction, and the horizontal upper surfaces of the two at the same height position constitute one break target as a whole. Used as a mounting surface for In other words, the break target is placed on the holding unit 201 with a part thereof being exposed downward. The holding unit 201 is made of, for example, metal.
　また、保持部２０１は、水平面内のあらかじめ定められた一の方向（保持部進退方向）における一対の単位保持部２０１ａと２０１ｂの近接および離隔動作が可能とされてなる。すなわち、ブレーク装置２００においては、離隔距離ｄ２は可変とされてなる。図７においては、図面視左右方向が保持部進退方向となる。 保持 In addition, the holding unit 201 is configured so that a pair of unit holding units 201a and 201b can approach and separate from each other in one predetermined direction (holding unit moving direction) in a horizontal plane. That is, in the break device 200, the separation distance d2 is variable. In FIG. 7, the left-right direction in the drawing is the holding unit advance / retreat direction.
　さらに保持部２０１においては、図示しない駆動機構により、被載置面に載置されたブレーク対象物の水平面内におけるアライメント動作が可能とされている。 {Circle around (4)} In the holding section 201, a drive mechanism (not shown) enables an alignment operation of a break target placed on the placement surface in a horizontal plane.
　ブレークバー２０２は、断面視二等辺三角形状の刃先２０２ｅが刃渡り方向に延在するように設けられてなる板状の金属製（例えば超硬合金製）部材である。図７においては、刃渡り方向が図面に垂直な方向となるように、ブレークバー２０２を示している。刃先２０２ｅの角度（刃先角）θは５°～９０°であり、５～３０°（例えば１５°）であるのが好適である。係る好適な刃先角θは、従来の一般的なブレーク処理において用いられていたブレークバーの刃先角である６０°～９０°に比して小さい。 The break bar 202 is a plate-shaped metal (for example, a cemented carbide) member provided with a cutting edge 202e having an isosceles triangular cross section in a cross-sectional view and extending in a cutting direction. FIG. 7 shows the break bar 202 so that the blade length direction is perpendicular to the drawing. The angle θ of the blade edge 202e (blade angle) is 5 ° to 90 °, and preferably 5 ° to 30 ° (for example, 15 °). Such a preferable cutting edge angle θ is smaller than 60 ° to 90 ° which is the cutting angle of the break bar used in the conventional general break processing.
　なお、より詳細には、刃先２０２ｅの最先端部分は曲率半径が５μｍから３０μｍ程度（例えば１５μｍ）の微小な曲面となっている。係る曲率半径も、従来の一般的なブレーク処理において用いられていたブレークバーの曲率半径である５０μｍ～１００μｍに比して小さい。 More specifically, the tip end of the cutting edge 202e is a minute curved surface having a radius of curvature of about 5 μm to 30 μm (for example, 15 μm). Such a radius of curvature is also smaller than the radius of curvature of a break bar used in conventional general break processing, which is 50 μm to 100 μm.
　係るブレークバー２０２は、保持部進退方向における一対の単位保持部２０１ａと２０１ｂの中間位置（それぞれから等価な位置）の上方において、図示しない保持手段により、保持部進退方向に垂直な鉛直面内において鉛直方向に昇降可能に設けられてなる。 The break bar 202 is held by a holding means (not shown) above a middle position (an equivalent position) between the pair of unit holding portions 201a and 201b in the holding portion moving direction and in a vertical plane perpendicular to the holding portion moving direction. It is provided to be able to move up and down in the vertical direction.
　以上のような構成を有するブレーク装置２００を用いた第１ブレーク処理は、図７に示すように、ダイシングテープ４が貼付された状態のスクライブ処理後の基板１０の、デバイスパターン２側の面および側部を覆う態様にて、保護フィルム５を貼付したうえで行う。以降の説明においては、係る保護フィルム５を貼付した状態のものについても、単に基板１０と称することがある。保護フィルム５には、厚みが１０μｍ～７５μｍ程度（例えば２５μｍ）の公知のものを適用可能である。 As shown in FIG. 7, the first break process using the break device 200 having the above-described configuration includes the surface on the device pattern 2 side of the substrate 10 after the scribe process with the dicing tape 4 attached. This is performed after attaching the protective film 5 in a mode of covering the side portions. In the following description, the substrate having the protective film 5 attached thereto may be simply referred to as the substrate 10. As the protective film 5, a known film having a thickness of about 10 μm to 75 μm (for example, 25 μm) can be applied.
　具体的には、まず、図７に示すように、保護フィルム５を保持部２０１の被載置面と接触させる態様にて基板１０を保持部２０１上に載置する。すなわち、基板１０は、デバイスパターン２側が下方となりメタル膜３側が上方となる姿勢で、つまりはスクライブ処理のときとは上下反転した姿勢で、保持部２０１上に載置される。このとき、ブレークバー２０２は、基板１０とは接触しない高さに配置されている。 Specifically, first, as shown in FIG. 7, the substrate 10 is placed on the holding unit 201 in such a manner that the protective film 5 is brought into contact with the mounting surface of the holding unit 201. That is, the substrate 10 is placed on the holding unit 201 in a posture in which the device pattern 2 side is downward and the metal film 3 side is upward, that is, in a posture that is upside down from the time of the scribe processing. At this time, the break bar 202 is arranged at a height that does not make contact with the substrate 10.
　なお、本実施の形態のように、所定の間隔（ピッチ）ｄ１で複数の分断予定位置Ｐが定められているときは、離隔距離ｄ２が基板１０の分断予定位置Ｐの間隔（ピッチ）ｄ１と等しくなるように一対の単位保持部２０１ａと２０１ｂを配置した状態で、基板１０を保持部２０１上に載置する。これは一般的なブレーク処理の際に採用されるｄ２＝１．５ｄ１（ｄ２はｄ１の（３／２）倍）なる条件に比して、一対の単位保持部２０１ａと２０１ｂの間隔を狭めた条件となっている。なお、実際の処理においては、ｄ２＝０．５ｄ１～１．２５ｄ１となる範囲であればよい。 When a plurality of scheduled cutting positions P are defined at a predetermined interval (pitch) d1 as in the present embodiment, the separation distance d2 is equal to the spacing (pitch) d1 of the scheduled cutting positions P of the substrate 10. The substrate 10 is placed on the holding unit 201 with the pair of unit holding units 201a and 201b arranged so as to be equal. This is because the distance between the pair of unit holding units 201a and 201b is narrowed as compared with the condition of d2 = 1.5d1 (d2 is (3/2) times d1) employed in the general break processing. It is a condition. In the actual processing, it is sufficient that d2 is in the range of 0.5d1 to 1.25d1.
　基板１０の載置がなされると、続いて、駆動機構を適宜に動作させることにより、基板１０の位置決めがなされる。具体的には、スクライブ処理においてスクライブラインＳＬさらには垂直クラックＶＣを設けた基板１０の分断予定位置Ｐの延在方向が、ブレークバー２０２の刃渡り方向に一致させられる。係る位置決めを行うことにより、図７に示すように、ブレークバー２０２の刃先２０２ｅが、分断予定位置Ｐのメタル膜側端部Ｐｂの上方に位置することになる。 After the substrate 10 is placed, the substrate 10 is positioned by operating the drive mechanism appropriately. Specifically, in the scribing process, the extending direction of the scheduled cutting position P of the substrate 10 provided with the scribe line SL and the vertical crack VC is made to coincide with the blade extending direction of the break bar 202. By performing such positioning, the cutting edge 202e of the break bar 202 is positioned above the metal film side end Pb of the planned cutting position P, as shown in FIG.
　係る位置決めがなされると、図７において矢印ＡＲ２にて示すように、ブレークバー２０２は、刃先２０２ｅが分断予定位置Ｐのメタル膜側端部Ｐｂ（より詳細にはダイシングテープ４の上面）に向けて鉛直下方に下降させられる。 When such positioning is performed, as shown by an arrow AR2 in FIG. 7, the break bar 202 is directed toward the metal film side end portion Pb (more specifically, the upper surface of the dicing tape 4) at the cutting position P at which the cutting edge 202e is to be cut. Down vertically.
　ブレークバー２０２は、その刃先２０２ｅが分断予定位置Ｐのメタル膜側端部Ｐｂに当接した後も所定距離だけ下降させられる。すなわち、基板１０に対して所定の押し込み量にて押し込まれる。係る押し込み量は０．０５ｍｍ～０．２ｍｍ（例えば０．１ｍｍ）であるのが好適である。 The break bar 202 is lowered by a predetermined distance even after the cutting edge 202e comes into contact with the metal film side end Pb of the planned cutting position P. That is, it is pushed into the substrate 10 by a predetermined pushing amount. It is preferable that the pushing amount is 0.05 mm to 0.2 mm (for example, 0.1 mm).
　すると、図８に示すように、基板１０に対してブレークバー２０２の刃先２０２ｅを作用点とし、一対の単位保持部２０１ａ、２０１ｂのそれぞれの被載置面の内側端部ｆ（ｆａ、ｆｂ）を支点とする三点曲げの状況が生じる。これにより、図８において矢印ＡＲ３にて示すように、基板１０には、相反する２つの向きに引張応力が作用し、その結果、垂直クラックＶＣはさらに伸展させられるとともに、基材１およびデバイスパターン２は左右２つの部分にいったん離隔し、両部分の間には間隙Ｇが形成される。 Then, as shown in FIG. 8, the cutting edge 202 e of the break bar 202 is used as a point of action with respect to the substrate 10, and the inner ends f (fa, fb) of the mounting surfaces of the pair of unit holders 201 a, 201 b. A three-point bending situation with the fulcrum as a fulcrum occurs. As a result, as shown by an arrow AR3 in FIG. 8, tensile stress acts on the substrate 10 in two opposite directions, and as a result, the vertical crack VC is further extended, and the substrate 1 and the device pattern 2 is once separated into two right and left portions, and a gap G is formed between the two portions.
　ただし、メタル膜３は、この時点では離隔には至らず、単に刃先２０２ｅの押し込みによって折り曲げられるに留まる。すなわち、ブレークバー２０２の押し込みの際、メタル膜３、および、刃先２０２ｅとメタル膜３との間に位置するダイシングテープ４には、折曲部Ｂが形成される。 However, the metal film 3 does not reach the separation at this point, but is merely bent by pushing the cutting edge 202e. That is, when the break bar 202 is pushed, the bent portion B is formed on the metal film 3 and the dicing tape 4 located between the cutting edge 202 e and the metal film 3.
　その後、図９にＡＲ４にて示すように、ブレークバー２０２が上昇させられて基板１０の押し込みが解除されると、間隙Ｇは閉じて左右２つの部分の端部が当接した分断面Ｄとなる。一方、メタル膜３とダイシングテープ４には、折曲部Ｂが残存する。メタル膜３においては、折曲部Ｂが、他の平坦なメタル膜３の部分に比して材料強度的に弱い部分となっている。係る折曲部Ｂは、折り目として視認される。 Thereafter, as indicated by AR4 in FIG. 9, when the break bar 202 is lifted and the pushing of the substrate 10 is released, the gap G is closed and the cross section D where the ends of the left and right portions abut is formed. Become. On the other hand, the bent portion B remains in the metal film 3 and the dicing tape 4. In the metal film 3, the bent portion B is a portion where the material strength is weaker than the other flat metal film 3. Such a bent portion B is visually recognized as a fold.
　以上のような態様にて行う、第１ブレーク処理は、基材１およびデバイスパターン２における分断を確実に生じさせるとともに、メタル膜３においては、折り目として視認可能な折曲部Ｂが確実に形成されるようにすることを意図したものである。そして、これらを好適に実現するための条件として、第１ブレーク処理においては、一般的なブレーク処理とは異なり、一対の単位保持部２０１ａと２０１ｂの離隔距離ｄ２を分断予定位置Ｐの間隔ｄ１と等しくし、刃先２０２ｅの最先端部分の曲率半径を５μｍ～３０μｍとしている。また、刃先角θは５°～３０°とすることが好適である。 The first break process performed in the above-described manner surely causes the substrate 1 and the device pattern 2 to be separated from each other, and also reliably forms a bent portion B that can be visually recognized as a fold in the metal film 3. It is intended to be As a condition for suitably realizing these, in the first break processing, unlike the general break processing, the separation distance d2 between the pair of unit holding units 201a and 201b is set to be equal to the distance d1 of the scheduled dividing position P. The radius of curvature of the tip portion of the cutting edge 202e is 5 μm to 30 μm. Further, it is preferable that the edge angle θ is 5 ° to 30 °.
　　＜第２ブレーク処理＞
　第１ブレーク処理による基材１とデバイスパターン２の分断とメタル膜３とダイシングテープ４に対する折曲部Ｂの形成とがなされると、続いて、第２ブレーク処理が行われる。第２ブレーク処理は、第１ブレーク処理と同様、ブレーク装置２００を用いて行う。 <Second break processing>
After the separation of the base material 1 and the device pattern 2 by the first break processing and the formation of the bent portion B on the metal film 3 and the dicing tape 4, the second break processing is subsequently performed. The second break processing is performed using the break device 200, as in the first break processing.
　図１０は、第２ブレーク処理の実行前の様子を模式的に示す図である。図１１は、第２ブレーク処理の実行中の様子を模式的に示す図である。図１２は、第２ブレーク処理を実行後の基板１０を模式的に示す図である。 FIG. 10 is a diagram schematically showing a state before execution of the second break processing. FIG. 11 is a diagram schematically showing a state during execution of the second break processing. FIG. 12 is a diagram schematically illustrating the substrate 10 after the second break processing is performed.
　第２ブレーク処理に際しては、まず、図１０に示すように、一般的なブレーク処理と同様、ｄ２＝１．５ｄ１（ｄ２はｄ１の（３／２）倍）となるように一対の単位保持部２０１ａと２０１ｂを配置した状態で、ダイシングテープ４を保持部２０１の被載置面と接触させる態様にて基板１０を保持部２０１上に載置する。すなわち、基板１０は、第１ブレーク処理のときとは上下反転した姿勢で、保持部２０１上に載置される。ｄ１が例えば２．１１ｍｍ～２．３６ｍｍ程度である場合には、ｄ２は３．１６５ｍｍ～３．５４ｍｍとなる。なお、実際の処理においては、ｄ２＝１．０ｄ１～１．７５ｄ１となる範囲であればよい。また、第１ブレーク処理におけるｄ２より第２ブレーク処理におけるｄ２が大きくされることが好ましい。このとき、ブレークバー２０２は、基板１０とは接触しない高さに配置されている。 At the time of the second break processing, first, as shown in FIG. 10, a pair of unit holding units are set so that d2 = 1.5d1 (d2 is (3/2) times d1), as in the general break processing. The substrate 10 is mounted on the holding unit 201 in a state where the dicing tape 4 is in contact with the mounting surface of the holding unit 201 with the 201a and 201b arranged. That is, the substrate 10 is placed on the holding unit 201 in a posture that is upside down from that in the first break processing. When d1 is, for example, about 2.11 mm to 2.36 mm, d2 is 3.165 mm to 3.54 mm. In the actual processing, it is sufficient that d2 = 1.0 d1 to 1.75 d1. Further, it is preferable that d2 in the second break processing is made larger than d2 in the first break processing. At this time, the break bar 202 is arranged at a height that does not make contact with the substrate 10.
　基板１０の載置がなされると、続いて、駆動機構を適宜に動作させることにより、基板１０の位置決めがなされる。具体的には、分断面Ｄおよび折曲部Ｂの延在方向が、ブレークバー２０２の刃渡り方向に一致させられる。このとき、メタル膜３に形成されている視認可能な折曲部Ｂを、アライメントの指標として有効に利用することができる。係る位置決めを行うことにより、図１０に示すように、ブレークバー２０２の刃先２０２ｅが、もともとは分断予定位置Ｐのデバイスパターン側端部Ｐａ’であった、分断面Ｄの上端部の上方に位置することになる。 After the substrate 10 is placed, the substrate 10 is positioned by operating the drive mechanism appropriately. Specifically, the extending directions of the dividing plane D and the bent part B are made to coincide with the blade extending direction of the break bar 202. At this time, the visible bent portion B formed on the metal film 3 can be effectively used as an index for alignment. By performing such positioning, as shown in FIG. 10, the cutting edge 202 e of the break bar 202 is positioned above the upper end of the dividing section D, which was originally the device pattern side end Pa ′ of the planned cutting position P. Will do.
　係る位置決めがなされると、図１０において矢印ＡＲ５にて示すように、ブレークバー２０２は、刃先２０２ｅが分断予定位置Ｐのデバイスパターン側端部Ｐａ’（より詳細には保護フィルム５の上面）に向けて鉛直下方に下降させられる。 When such positioning is performed, as shown by an arrow AR5 in FIG. 10, the break bar 202 is attached to the device pattern side end Pa ′ (more specifically, the upper surface of the protective film 5) at the position P at which the cutting edge 202e is to be divided. It is lowered vertically downward.
　係るブレークバー２０２の下降は、図１１に示すように、刃先２０２ｅが保護フィルム５を介してダイシング溝ｄｇにおいて露出している基材１を所定の押し込み量にて押し込むまで行われる。このとき、デバイスパターン２および基材１はすでに２つに分断されており、その分断面Ｄに対して上方から力が加わる。その結果、矢印ＡＲ６にて示すように、メタル膜３には、分断面Ｄの下方において相反する２つの向きに引張応力が作用する。上述したように、メタル膜３の折曲部Ｂは他の部分に比して材料強度的に弱いので、最終的には、図１２に示すように、メタル膜３までもが折曲部Ｂのところで分断されて分断面Ｄをなし、ダイシングテープ４のみに折曲部Ｂが残存した状態が容易かつ確実に実現される。 The lowering of the break bar 202 is performed until the cutting edge 202e pushes the substrate 1 exposed in the dicing groove dg through the protective film 5 by a predetermined pushing amount as shown in FIG. At this time, the device pattern 2 and the substrate 1 are already divided into two, and a force is applied to the section D from above. As a result, as shown by the arrow AR6, tensile stress acts on the metal film 3 in two opposite directions below the dividing plane D. As described above, since the bent portion B of the metal film 3 is weaker in material strength than other portions, finally, as shown in FIG. Then, a state in which the bent portion B remains only in the dicing tape 4 by being divided at the dicing tape D is easily and reliably realized.
　係る第２ブレーク処理における係る押し込み量は、第１ブレーク処理における押し込み量の半分程度の０．０２ｍｍ～０．１ｍｍ（例えば０．０５ｍｍ）であるのが好適である。これは、分断された２つの部分の接触により破損が生じることを防ぐためである。なお、ｄ２＝１．５ｄ１としているが、これは、このような小さい押し込み量でもメタル膜３が折曲部Ｂのところで好適に分断されるようにすることを意図したものである。 The pushing amount in the second break processing is preferably about 0.02 mm to 0.1 mm (for example, 0.05 mm), which is about half the pushing amount in the first break processing. This is to prevent the breakage due to the contact between the two divided parts. Note that d2 = 1.5d1 is intended to allow the metal film 3 to be appropriately divided at the bent portion B even with such a small pushing amount.
　第２ブレーク処理の終了後、図１２に矢印ＡＲ７にて示すように、ダイシングテープ４に対し面内方向に引張応力を作用させることで、ダイシングテープ４は伸張し、基板１０は分断面Ｄのところで２つの部分１０Ａ、１０Ｂに離隔させられる。これにより、基板１０が２つに分断されたことになる。 After the end of the second break processing, as shown by an arrow AR7 in FIG. 12, by applying a tensile stress to the dicing tape 4 in the in-plane direction, the dicing tape 4 is expanded, and the substrate 10 By the way, it is separated into two parts 10A and 10B. Thus, the substrate 10 is divided into two.
　以上、説明したように、本実施の形態によれば、基材の一方主面にデバイスパターンを有し、他方主面にメタル膜を有する半導体デバイス用基板であって、デバイスパターン側の分断予定位置にＴＥＧパターンのような金属パターンが形成されているものの分断を、良好かつ確実に、行うことができる。 As described above, according to the present embodiment, a semiconductor device substrate having a device pattern on one main surface of a base material and a metal film on the other main surface, which is to be divided on the device pattern side Even if a metal pattern such as a TEG pattern is formed at a position, the cutting can be performed satisfactorily and reliably.
　　＜変形例＞
　上述の実施の形態においては、スクライビングホイールによりスクライブ処理を行っているが、スクライブラインの形成およびクラックの伸展が好適に実現されるのであれば、ダイヤモンドポイント等、スクライビングホイール以外のツールによってスクライブラインを形成する態様であってもよい。 <Modification>
In the above-described embodiment, the scribing process is performed by the scribing wheel. It may be a mode of forming.
　また、第１のブレーク工程においてすでに基材１に垂直クラックＶＣが形成され、メタル膜３に折曲部Ｂが形成されているため、第２のブレーク工程においては、従来の分断処理と同様の刃先角θと先端における曲率半径とを有するブレークバーを用いてもよい。 Further, in the first break step, the vertical crack VC has already been formed in the base material 1 and the bent portion B has been formed in the metal film 3, so that in the second break step, the same as the conventional cutting process is performed. A break bar having a cutting edge angle θ and a radius of curvature at the tip may be used.
　上述の実施の形態においては、ダイシングブレード５２を用いてダイシング処理を行っているが、レーザーの照射等によりダイシング溝を形成する態様であってもよい。 In the above-described embodiment, the dicing process is performed using the dicing blade 52, but the dicing groove may be formed by laser irradiation or the like.
　また、第１ブレーク工程、第２ブレーク工程において用いられたブレーク装置は、水平方向において所定の距離離隔された一対の単位保持部２０１ａと２０１ｂとからなる保持部２０１を備えているが、これに代えて、基板の全面に接触して保持する弾性体からなる保持部を備えるブレーク装置を用いてもよい。この場合にも、第１ブレーク処理における押し込み量は０．０５ｍｍ～０．２ｍｍ（例えば０．１ｍｍ）であり、第２ブレーク処理における押し込み量は、第１ブレーク処理における押し込み量の半分程度の０．０２ｍｍ～０．１ｍｍ（例えば０．０５ｍｍ）であるのが好適である。 In addition, the break device used in the first break step and the second break step includes a holding unit 201 including a pair of unit holding units 201a and 201b separated by a predetermined distance in the horizontal direction. Alternatively, a break device provided with a holding portion made of an elastic body that contacts and holds the entire surface of the substrate may be used. Also in this case, the pushing amount in the first break process is 0.05 mm to 0.2 mm (for example, 0.1 mm), and the pushing amount in the second break process is 0, which is about half the pushing amount in the first break process. It is preferably between 0.02 mm and 0.1 mm (eg 0.05 mm).

Claims (7)

  1. 　基材と、前記基材の第１の主面側に設けられた薄膜層と、前記基材の第２の主面に設けられたメタル膜とを備える、メタル膜付き基板を分断する方法であって、
    　前記第１の主面側を所定の分断予定位置においてダイシングすることにより、前記基材を露出させるダイシング工程と、
    　前記ダイシング工程によって露出した前記基材をスクライビングツールによってスクライブすることによりスクライブラインを形成し、前記スクライブラインから前記分断予定位置に沿って前記基材の内部に対し垂直クラックを伸展させるスクライブ工程と、
    　前記第２の主面側から前記メタル膜付き基板に対しブレークバーを当接させることによって前記垂直クラックをさらに伸展させることで、前記メタル膜付き基板の前記メタル膜以外の部分を前記分断予定位置において分断する第１ブレーク工程と、
    　前記第１の主面側から前記メタル膜付き基板に対し前記ブレークバーを当接させることによって前記メタル膜を前記分断予定位置において分断する第２ブレーク工程と、
    を備えることを特徴とする、メタル膜付き基板の分断方法。     A method for dividing a substrate with a metal film, comprising: a base material; a thin film layer provided on a first main surface side of the base material; and a metal film provided on a second main surface of the base material. So,
    A dicing step of exposing the base material by dicing the first main surface side at a predetermined dividing expected position;
    A scribing step of forming a scribe line by scribing the base material exposed by the dicing step with a scribing tool, and extending a vertical crack from the scribe line to the inside of the base material along the scheduled cutting position,
    The vertical cracks are further extended by bringing a break bar into contact with the substrate with the metal film from the second main surface side, so that the portion other than the metal film of the substrate with the metal film is divided at the predetermined dividing position. A first break step of dividing at
    A second breaking step of dividing the metal film at the planned dividing position by bringing the break bar into contact with the substrate with the metal film from the first main surface side;
    A method for cutting a substrate with a metal film, comprising:
  2. 　請求項１に記載のメタル膜付き基板の分断方法であって、
    　前記ダイシング工程においては、
    　　形成されるダイシング溝の深さをＡ、前記ダイシング溝の幅をＢ、前記スクライビングツールのスクライブ誤差をＣ、前記スクライビングツールの刃先角をδとするとき、
    　　　Ｂ＞２Ａtan（δ／２）＋Ｃ
    なる関係式をみたすように前記ダイシング溝を形成することによって、前記基材を露出させる、
    ことを特徴とする、メタル膜付き基板の分断方法。     A method for cutting a substrate with a metal film according to claim 1,
    In the dicing step,
    When the depth of the dicing groove to be formed is A, the width of the dicing groove is B, the scribe error of the scribing tool is C, and the edge angle of the scribing tool is δ,
    B> 2Atan (δ / 2) + C
    By forming the dicing groove so as to satisfy the following relationship, the base material is exposed,
    A method for cutting a substrate with a metal film, comprising:
  3. 　請求項１または請求項２に記載のメタル膜付き基板の分断方法であって、
    　前記薄膜層の前記分断予定位置に金属パターンが設けられてなる、
    ことを特徴とする、メタル膜付き基板の分断方法。     A method for cutting a substrate with a metal film according to claim 1 or 2,
    A metal pattern is provided at the planned dividing position of the thin film layer,
    A method for cutting a substrate with a metal film, comprising:
  4. 　請求項１ないし請求項３のいずれかに記載のメタル膜付き基板の分断方法であって、
    　前記ブレークバーの刃先先端部の曲率半径が５μｍ～３０μｍである、
    ことを特徴とする、メタル膜付き基板の分断方法。     A method for cutting a substrate with a metal film according to claim 1, wherein:
    The radius of curvature of the tip of the tip of the break bar is 5 μm to 30 μm.
    A method for cutting a substrate with a metal film, comprising:
  5. 　請求項４に記載のメタル膜付き基板の分断方法であって、
    　前記所定の分断予定位置が所定の間隔ｄ１にて複数定められており、
    　前記第１ブレーク工程および前記第２ブレーク工程は、水平方向において離隔する一対の保持部によって前記メタル膜付き基板を下方から支持した状態で、前記一対の保持部のそれぞれから等価な位置において行うようにし、
    　前記一対の保持部の離隔距離ｄ２を、
    　　前記第１ブレーク工程においてはｄ２＝０．５ｄ１～１．２５ｄ１とし、
    　　前記第２ブレーク工程においてはｄ２＝１．０ｄ１～１．７５ｄ１とする、
    ことを特徴とする、メタル膜付き基板の分断方法。     A method for cutting a substrate with a metal film according to claim 4,
    A plurality of the predetermined scheduled dividing positions are determined at a predetermined interval d1,
    The first break step and the second break step may be performed at positions equivalent to each of the pair of holding units in a state where the substrate with a metal film is supported from below by a pair of holding units separated in a horizontal direction. West,
    The separation distance d2 between the pair of holding portions is
    In the first break step, d2 = 0.5d1 to 1.25d1,
    In the second break step, d2 = 1.0d1 to 1.75d1.
    A method for cutting a substrate with a metal film, comprising:
  6. 　請求項１ないし請求項５のいずれかに記載のメタル膜付き基板の分断方法であって、
    　前記ダイシング工程、前記スクライブ工程、前記第１ブレーク工程、および前記第２ブレーク工程を、前記メタル膜に粘着性テープを貼付した状態で行い、
    　前記第１ブレーク工程においては、前記メタル膜以外の部分を分断するとともに前記メタル膜および前記粘着性テープの前記分断予定位置に相当する位置に折り目を形成する、
    ことを特徴とする、メタル膜付き基板の分断方法。     A method for cutting a substrate with a metal film according to any one of claims 1 to 5,
    Performing the dicing step, the scribe step, the first break step, and the second break step in a state where an adhesive tape is stuck to the metal film;
    In the first break step, a fold is formed at a position corresponding to the planned dividing position of the metal film and the adhesive tape while dividing a portion other than the metal film,
    A method for cutting a substrate with a metal film, comprising:
  7. 　請求項１ないし請求項６のいずれかに記載のメタル膜付き基板の分断方法であって、
    　前記第１ブレーク工程は、前記メタル膜付き基板の姿勢を前記スクライブ工程のときとは上下反転させて行い、
    　前記第２ブレーク工程は、前記メタル膜付き基板の姿勢を前記第１ブレーク工程のときとは上下反転させて行う、
    ことを特徴とする、メタル膜付き基板の分断方法。     A method for cutting a substrate with a metal film according to any one of claims 1 to 6, wherein
    The first break step is performed by inverting the posture of the substrate with the metal film upside down in the scribing step,
    The second break step is performed by inverting the posture of the substrate with a metal film upside down as in the first break step.
    A method for cutting a substrate with a metal film, comprising:
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