TW201637856A - Method for dividing bonded substrate and dividing apparatus thereof - Google Patents

Method for dividing bonded substrate and dividing apparatus thereof Download PDF

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Publication number
TW201637856A
TW201637856A TW104144772A TW104144772A TW201637856A TW 201637856 A TW201637856 A TW 201637856A TW 104144772 A TW104144772 A TW 104144772A TW 104144772 A TW104144772 A TW 104144772A TW 201637856 A TW201637856 A TW 201637856A
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Taiwan
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substrate
bonded substrate
scribe line
dividing
bonded
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TW104144772A
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Chinese (zh)
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TWI698329B (en
Inventor
Masakazu Takeda
naoya Kiyama
kenta Tamura
Kenji Murakami
Mamoru Hideshima
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Mitsuboshi Diamond Ind Co Ltd
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/22Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
    • B28D1/225Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising for scoring or breaking, e.g. tiles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/22Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • B28D5/022Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00Technologies relating to the processing of minerals
    • Y02P40/50Glass production, e.g. reusing waste heat during processing or shaping
    • Y02P40/57Improving the yield, e-g- reduction of reject rates

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mining & Mineral Resources (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Dicing (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)

Abstract

This invention provides a method capable of properly dividing a bonded substrate formed by bonding a silicon substrate and a glass substrate with an adhesive layer and a dividing apparatus thereof. The method for dividing a bonded substrate at a specific predetermined dividing position comprises: a scribe line forming step (unit) in which a scribe line is formed by means of a specific scriber at a predetermined dividing position on one main surface of the glass substrate; a cutting groove forming step (unit) in which a groove portion is formed by using a specific groove portion forming mechanism from one main surface to the middle of the adhesive layer of the silicon substrate at a predetermined dividing position on one main surface of the silicon substrate; and a breaking step (unit) in which a bonding substrate formed with a scribe line and a groove portion is broken at between the scribe line and the groove portion.

Description

貼合基板之分割方法及分割裝置 Method for dividing laminated substrate and dividing device

本發明係關於一種利用接著層貼合矽基板與玻璃基板而成之基板之分割方法及分割裝置。 The present invention relates to a method and a dividing device for a substrate obtained by bonding a ruthenium substrate and a glass substrate by an adhesive layer.

矽基板作為半導體元件(半導體晶片)用之基板被廣泛使用,但於基板之複合化及其他目的下,有時使用利用接著層(接著劑)將矽基板與玻璃基板貼合而成(接著而成)之貼合基板。又,於使用矽基板之半導體元件之製造製程中,通常,採用藉由利用切割機之切割將二維地形成有多個元件圖案之母基板即矽基板分割而獲得各個晶片之方法,於使用上述矽基板與玻璃基板之貼合基板作為母基板之情形時,亦採用相同之順序。 The tantalum substrate is widely used as a substrate for a semiconductor element (semiconductor wafer). However, in the case of composite of a substrate and other purposes, a tantalum substrate and a glass substrate may be bonded together by an adhesive layer (adhesive) (then The substrate is bonded to the substrate. Further, in the manufacturing process of the semiconductor device using the ruthenium substrate, a method of obtaining each wafer by dividing a ruthenium substrate, which is a mother substrate in which a plurality of element patterns are two-dimensionally formed by dicing by a dicing machine, is generally used. In the case where the bonded substrate of the tantalum substrate and the glass substrate is used as the mother substrate, the same order is also employed.

又,將使熱硬化性樹脂附著於脆性材料基板之主面而成之具有樹脂之脆性材料基板分割之方法亦已為公知(例如,參照專利文獻1)。 In addition, a method of dividing a brittle material substrate having a resin by attaching a thermosetting resin to a main surface of a brittle material substrate is also known (for example, refer to Patent Document 1).

[現有技術文獻] [Prior Art Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本專利5170195號公報 [Patent Document 1] Japanese Patent No. 5170195

於藉由切割機將利用接著層貼合矽基板與玻璃基板而成之貼合基板分割之情形時,因玻璃基板之性質而難以提高加工速度,又,由 於玻璃基板容易產生碎屑(破片),因此存在生產性較差之問題。又,必須使用樹脂刀片等特殊之切割刀片,但亦存在磨損較快而成為成本高之原因之問題。進而,亦存在切割時為了冷卻等目的而使用之水容易滲入到接著層與玻璃之間之問題。 When the bonded substrate obtained by bonding the enamel substrate and the glass substrate by the dicing layer is divided by the dicing machine, it is difficult to increase the processing speed due to the nature of the glass substrate, and Debris (fragmentation) is likely to occur on the glass substrate, and thus there is a problem that productivity is poor. Further, it is necessary to use a special cutting blade such as a resin blade, but there is also a problem that the wear is fast and the cost is high. Further, there is also a problem that water used for the purpose of cooling during cutting easily penetrates between the adhesive layer and the glass.

本發明係鑒於上述問題而開發者,其目的在於提供能夠將利用接著層貼合矽基板與玻璃基板而成之貼合基板較佳地分割之方法。 The present invention has been made in view of the above problems, and an object of the invention is to provide a method of preferably dividing a bonded substrate obtained by bonding a ruthenium substrate and a glass substrate by an adhesive layer.

為了解決上述問題,技術方案1之發明之特徵在於:其係將利用接著層貼合矽基板與玻璃基板而成之貼合基板於特定之分割預定位置加以分割之方法,且包括:劃線形成步驟,其係於成為上述貼合基板之一方主面之上述玻璃基板之一主面之上述分割預定位置,藉由特定之劃線工具形成劃線;切割槽形成步驟,其係於成為上述貼合基板之另一方主面之上述矽基板之一主面之上述分割預定位置,自上述矽基板之上述一主面直至上述接著層之中途利用特定之槽部形成機構形成槽部;及裂斷步驟,其係將形成有上述劃線與上述槽部之上述貼合基板於上述劃線與上述槽部之間裂斷。 In order to solve the above-described problems, the invention of the first aspect of the invention is characterized in that the bonded substrate obtained by bonding the ruthenium substrate and the glass substrate to the specific predetermined division position is divided by a predetermined layer, and includes: scribing formation a step of forming a scribe line by a specific scribing tool on a predetermined predetermined position of one of the main surfaces of the glass substrate which is one of the main surfaces of the bonded substrate, and a dicing groove forming step for forming the affixing a predetermined predetermined position of one main surface of the tantalum substrate on the other main surface of the substrate, wherein the groove portion is formed by a specific groove portion forming mechanism from the one main surface of the tantalum substrate to the middle of the adhesive layer; In the step, the bonded substrate on which the scribe line and the groove portion are formed is broken between the scribe line and the groove portion.

技術方案2之發明係如技術方案1之貼合基板之分割方法,其中於上述裂斷步驟中,於將上述貼合基板以上述矽基板側成為最上部、且上述玻璃基板側成為最下部之方式載置於包含彈性體之支持部之上表面之狀態下,使裂斷刀自上述矽基板之上方相對於上述分割預定位置抵接並進而下壓,由此將上述貼合基板分斷。 According to a second aspect of the present invention, in the step of dividing the bonded substrate, the bonded substrate has an uppermost surface on the side of the substrate, and the side of the glass substrate is a lowermost portion. In a state in which the upper surface of the support portion including the elastic body is placed on the upper surface of the support portion including the elastic body, the split blade is pressed against the predetermined predetermined position from the upper side of the base plate and further pressed downward, thereby separating the bonded substrate.

技術方案3之發明係如技術方案2之貼合基板之分割方法,其中於上述裂斷步驟中,使上述裂斷刀抵接於上述槽部之底部並且進而下壓,由此一面藉由上述裂斷刀將上述接著層切開,一面使垂直裂痕自上述劃線伸展,從而將上述貼合基板分斷。 The invention of claim 3 is the method for dividing a bonded substrate according to claim 2, wherein in the breaking step, the splitting blade is brought into contact with the bottom of the groove portion and further pressed, thereby The splitting blade cuts the above-mentioned adhesive layer, and the vertical crack is extended from the above-mentioned scribe line to break the bonded substrate.

技術方案4之發明係如技術方案2之貼合基板之分割方法,其中 於上述裂斷步驟中,使上述裂斷刀之刀尖側面抵接於上述矽基板之上述一主面之上述槽部之開口端部後再進而下壓,由此將上述接著層劈開並且使垂直裂痕自上述劃線伸展,從而將上述貼合基板分斷。 The invention of claim 4 is the method for dividing a bonded substrate according to claim 2, wherein In the cracking step, the blade edge side of the splitting blade is brought into contact with the opening end of the groove portion of the one main surface of the base plate, and then pressed down, thereby peeling off the adhesive layer and The vertical crack extends from the scribing line to break the bonded substrate.

技術方案5之發明係如技術方案1至4中任一項之貼合基板之分割方法,其中上述特定之劃線工具為劃線輪。 The invention of claim 5 is the method for dividing a bonded substrate according to any one of claims 1 to 4, wherein the specific scribing tool is a scribing wheel.

技術方案6之發明係如技術方案1至5中任一項之貼合基板之分割方法,其中上述特定之槽部形成機構為切割機。 The invention of claim 6 is the method for dividing a bonded substrate according to any one of claims 1 to 5, wherein the specific groove forming mechanism is a cutter.

技術方案7之發明之特徵在於:其係將利用接著層貼合矽基板與玻璃基板而成之貼合基板於特定之分割預定位置加以分割之分割裝置,且具備:劃線形成單元(所謂劃線桿),其於成為上述貼合基板之一方主面之上述玻璃基板之一主面之上述分割預定位置,藉由特定之劃線工具形成劃線;切割槽形成單元(所謂切割機),其於成為上述貼合基板之另一方主面之上述矽基板之一主面之上述分割預定位置,自上述矽基板之上述一主面直至上述接著層之中途利用特定之槽部形成機構形成槽部;及裂斷單元(所謂劃線器),其將形成有上述劃線與上述槽部之上述貼合基板於上述劃線與上述槽部之間裂斷。 The invention according to claim 7 is characterized in that the bonding substrate in which the bonding substrate and the glass substrate are bonded to each other by a bonding layer is divided into a predetermined division position, and a scribing forming unit (so-called drawing) a wire rod) which is formed by a predetermined scribing tool at a predetermined predetermined position of one of the main surfaces of the glass substrate which is one of the main surfaces of the bonded substrate; a cutting groove forming unit (so-called cutting machine) Forming a groove by using a specific groove forming mechanism from the one main surface of the cymbal substrate to the intermediate layer at a predetermined predetermined position of the main surface of the ruthenium substrate which is the other main surface of the bonded substrate And a breaking unit (so-called scriber) that breaks the bonded substrate on which the scribe line and the groove portion are formed between the scribe line and the groove portion.

如技術方案1至7之發明,能夠將利用接著層貼合矽基板與玻璃基板而成之貼合基板較佳地分割。 According to the inventions of the first to seventh aspects, the bonded substrate obtained by bonding the tantalum substrate and the glass substrate by the adhesive layer can be preferably divided.

1‧‧‧玻璃基板 1‧‧‧ glass substrate

1a‧‧‧(玻璃基板之)主面 1a‧‧‧ (glass substrate) main surface

2‧‧‧矽基板 2‧‧‧矽 substrate

2a‧‧‧(矽基板之)主面 2a‧‧‧ (on the substrate)

3‧‧‧接著層 3‧‧‧Next layer

4‧‧‧上部層 4‧‧‧ upper layer

10‧‧‧貼合基板 10‧‧‧Fixed substrate

10a‧‧‧單片 10a‧‧‧ single piece

101‧‧‧劃線輪 101‧‧‧marking wheel

201‧‧‧切割刀片 201‧‧‧Cutting Blade

300‧‧‧裂斷裝置 300‧‧‧breaking device

301‧‧‧支持部 301‧‧‧Support Department

301a‧‧‧(支持部之)上表面 301a‧‧‧ (support) upper surface

302‧‧‧裂斷刀 302‧‧‧ splitting knife

302a‧‧‧(裂斷刀之)刀尖 302a‧‧‧(cracked knife) tip

302b‧‧‧(刀尖之)側面 302b‧‧‧ (knife tip) side

A‧‧‧分割預定位置 A‧‧‧Divisional location

AR1‧‧‧箭頭 AR1‧‧‧ arrow

AR2‧‧‧箭頭 AR2‧‧‧ arrow

AR3‧‧‧箭頭 AR3‧‧‧ arrow

AR4‧‧‧箭頭 AR4‧‧‧ arrow

AR5‧‧‧箭頭 AR5‧‧‧ arrow

AR6‧‧‧箭頭 AR6‧‧‧ arrow

AR7‧‧‧箭頭 AR7‧‧‧ arrow

AR8‧‧‧箭頭 AR8‧‧‧ arrow

AR9‧‧‧箭頭 AR9‧‧‧ arrow

AR10‧‧‧箭頭 AR10‧‧‧ arrow

AR11‧‧‧箭頭 AR11‧‧‧ arrow

AR12‧‧‧箭頭 AR12‧‧ arrow

AR13‧‧‧箭頭 AR13‧‧‧ arrow

AR14‧‧‧箭頭 AR14‧‧ arrow

AR21‧‧‧箭頭 AR21‧‧‧ arrow

AR22‧‧‧箭頭 AR22‧‧‧ arrow

AR23‧‧‧箭頭 AR23‧‧‧ arrow

AR24‧‧‧箭頭 AR24‧‧ arrow

AR25‧‧‧箭頭 AR25‧‧‧ arrow

AR26‧‧‧箭頭 AR26‧‧ arrow

B‧‧‧分斷進展預定位置 B‧‧‧Decision progress location

CR1‧‧‧龜裂 CR1‧‧‧ crack

CR‧‧‧垂直裂痕 CR‧‧‧ vertical crack

CR2‧‧‧垂直裂痕 CR2‧‧‧ vertical crack

d‧‧‧距離 D‧‧‧distance

DG‧‧‧切割槽 DG‧‧ cutting slot

DG1‧‧‧(切割槽之)底部 DG1‧‧‧ (cutting groove) bottom

DG2‧‧‧(切割槽)開口端部 DG2‧‧‧ (cutting groove) open end

h‧‧‧深度 H‧‧‧depth

RE‧‧‧非形成區域 RE‧‧‧ non-formed areas

SB‧‧‧焊料球 SB‧‧‧ solder ball

SL‧‧‧劃線 SL‧‧‧

S1~S5‧‧‧步驟 S1~S5‧‧‧Steps

w‧‧‧寬度 w‧‧‧Width

θ‧‧‧刀尖角 Θ‧‧‧knife angle

圖1(a)、1(b)係概略性地表示貼合基板10之構成之剖視圖。 1(a) and 1(b) are cross-sectional views schematically showing the configuration of the bonded substrate 10.

圖2係對將貼合基板10於分割預定位置A分割之順序進行說明之圖。 FIG. 2 is a view for explaining the procedure of dividing the bonded substrate 10 at the predetermined dividing position A.

圖3(a)~(c)係用以說明劃線SL之形成之圖。 3(a) to (c) are views for explaining the formation of the scribe line SL.

圖4(a)~(c)係用以說明切割槽DG之形成(形成中之狀態)之圖。 4(a) to 4(c) are views for explaining the formation (the state in formation) of the cutting groove DG.

圖5係用以說明切割槽DG之形成(形成後之狀態)之圖。 Fig. 5 is a view for explaining the formation (state after formation) of the cutting groove DG.

圖6係例示形成有焊料球SB之後之貼合基板10之圖。 FIG. 6 is a view exemplifying the bonded substrate 10 after the solder balls SB are formed.

圖7係概略性地表示使用裂斷裝置300將貼合基板10裂斷之情形之圖。 FIG. 7 is a view schematically showing a state in which the bonded substrate 10 is broken by the breaking device 300.

圖8(a)~(c)係用以表示第1裂斷方法之圖。 8(a) to (c) are diagrams showing the first breaking method.

圖9(a)~(c)係用以表示第2裂斷方法之圖。 9(a) to 9(c) are diagrams showing the second breaking method.

<貼合基板> <Finished substrate>

圖1係概略性地表示本實施方式中成為分割之對象之貼合基板10之構成之剖視圖。於本實施方式中,所謂貼合基板10係藉由利用接著層3將玻璃基板1與矽基板2接著而貼合,整體上作為一個基板而成者。 FIG. 1 is a cross-sectional view schematically showing a configuration of a bonded substrate 10 to be divided in the present embodiment. In the present embodiment, the bonded substrate 10 is formed by laminating the glass substrate 1 and the ruthenium substrate 2 by the adhesive layer 3, and is formed as a single substrate as a whole.

貼合基板10係藉由於作為進行分割之位置而預先規定之分割預定位置A,利用下述方法沿著厚度方向分斷而分割。分割預定位置A係沿著貼合基板10之主面規定為線狀(例如直線狀)。於圖1中,例示於與圖面垂直之方向規定有分割預定位置A之情形。再者,於圖1中於作為貼合基板10之兩主面之玻璃基板1之主面1a與矽基板2之主面2a兩者標示有分割預定位置A,當然,於俯視(平面透視)貼合基板10之主面之情形時各個主面之分割預定位置A皆相同。換句話說,如果使一方主面之分割預定位置A於貼合基板10之厚度方向平行移動,仍與另一方主面之分割預定位置A一致。 The bonded substrate 10 is divided and divided in the thickness direction by the following method by the predetermined predetermined position A as the position at which the division is performed. The predetermined division position A is defined as a linear shape (for example, a linear shape) along the main surface of the bonded substrate 10. In FIG. 1, a case where the predetermined position A is defined is defined in a direction perpendicular to the plane of the drawing. Further, in FIG. 1, both the main surface 1a of the glass substrate 1 as the main surface of the bonded substrate 10 and the main surface 2a of the ruthenium substrate 2 are marked with a predetermined division position A, of course, in a plan view (planar perspective). In the case where the main surface of the substrate 10 is bonded, the predetermined predetermined positions A of the respective main faces are the same. In other words, if the predetermined division position A of one main surface is moved in parallel in the thickness direction of the bonded substrate 10, it is still coincident with the division predetermined position A of the other main surface.

雖於圖1中省略圖示,但亦可相對於一貼合基板10規定複數個分割預定位置A,例如,亦可為格子狀地規定分割預定位置A之態樣。於規定有複數個分割預定位置A之情形時,各個分割預定位置A彼此之間隔於可較佳地進行下述順序之分割之範圍內適當規定即可。 Although not shown in FIG. 1, a plurality of predetermined predetermined positions A may be defined with respect to one bonded substrate 10, and for example, a predetermined predetermined position A may be defined in a lattice shape. In the case where a plurality of predetermined predetermined positions A are defined, the respective divided predetermined positions A may be appropriately defined within a range in which the division can be preferably performed in the following order.

於圖1中進而亦標示有於分割時分斷實際進展之預定位置即分斷進展預定位置B。分斷進展預定位置B被視為貼合基板10之兩主面即 玻璃基板1之主面1a與矽基板2之主面2a之各者之分割預定位置A之間之沿著厚度方向之面。於圖1例示之情形時,分斷進展預定位置B係於圖面上垂直之方向延伸。 Also shown in FIG. 1 is a predetermined position, that is, a breaking progress predetermined position B, which is actually broken at the time of division. The predetermined position B of the breaking progress is regarded as the two main faces of the bonded substrate 10 A surface along the thickness direction between the main surface 1a of the glass substrate 1 and the predetermined predetermined position A of each of the main surfaces 2a of the cymbal substrate 2. In the case illustrated in Fig. 1, the breaking progress predetermined position B extends in the vertical direction on the drawing.

作為玻璃基板1之材質,例示硼矽酸玻璃、無鹼玻璃、鈉玻璃等鹼玻璃等般之各種玻璃。作為接著層3之材質,例示熱硬化型環氧樹脂等。 Various materials such as alkali glass such as borosilicate glass, alkali-free glass, and soda glass are exemplified as the material of the glass substrate 1. As a material of the adhesive layer 3, a thermosetting epoxy resin etc. are illustrated.

玻璃基板1、矽基板2、及接著層3之厚度、進而貼合基板10之總厚度,只要於利用下述方法將貼合基板10分割時可較佳地進行分割則無特別之限制,可分別例示為100μm~1000μm、50μm~1000μm、10μm~200μm、150μm~1500μm之範圍。又,關於貼合基板之平面尺寸亦無特別之限制,可例示縱1~3mm左右×橫1~3mm左右之範圍。 The thickness of the glass substrate 1, the ruthenium substrate 2, and the adhesive layer 3 and the total thickness of the bonded substrate 10 are not particularly limited as long as they can be preferably divided when the bonded substrate 10 is divided by the following method. The ranges are 100 μm to 1000 μm, 50 μm to 1000 μm, 10 μm to 200 μm, and 150 μm to 1500 μm, respectively. Further, the planar size of the bonded substrate is not particularly limited, and may be a range of about 1 to 3 mm in length and 1 to 3 mm in width.

又,於圖1中,例示於矽基板2之一方主面且為與和接著層3之鄰接面為相反側之主面、即觀察圖面時上表面側之主面2a設置有上部層4之情形。圖1(a)例示矽基板2之主面2a中、分割預定位置A之附近區域設為非形成區域RE之情形時之上部層4之形成態樣,圖1(b)例示於主面2a之整個表面形成有上部層4之情形時之形成態樣。 In addition, in FIG. 1, the upper surface 4 is provided on the main surface 2a of the upper surface side, and the main surface 2a of the upper surface side is the main surface of the side surface of the 矽 substrate 2, and the main surface opposite to the adjacent surface of the adhesive layer 3 The situation. Fig. 1(a) illustrates a formation of the upper layer 4 in the case where the vicinity of the division predetermined position A is the non-formation region RE in the principal surface 2a of the ruthenium substrate 2, and Fig. 1(b) is illustrated on the principal surface 2a. The entire surface is formed in the case where the upper layer 4 is formed.

再者,於圖1中為了簡單起見,以上部層4為單一層之方式圖示,但上部層4既可為單一層,亦可為包括相同材質或不同材質之多個層。作為上部層4之構成材料,例示各種金屬層、陶瓷層、半導體層、非晶層、樹脂層等各種材質。 In addition, in FIG. 1, for the sake of simplicity, the upper layer 4 is illustrated as a single layer, but the upper layer 4 may be a single layer or a plurality of layers including the same material or different materials. Various materials such as various metal layers, ceramic layers, semiconductor layers, amorphous layers, and resin layers are exemplified as the constituent material of the upper layer 4.

但是,於利用本實施方式之分割方法將貼合基板10分割時,上部層4之存在並非為必須。因此,於以後之說明中,關於形成有上部層4之情形,亦有時將矽基板2與上部層4簡單地總稱為矽基板2,又,嚴格而言有時將形成上部層4之上表面之面稱為矽基板2之主面2a。 However, when the bonded substrate 10 is divided by the dividing method of the present embodiment, the presence of the upper layer 4 is not essential. Therefore, in the following description, regarding the case where the upper layer 4 is formed, the tantalum substrate 2 and the upper layer 4 are sometimes collectively referred to simply as the tantalum substrate 2, and, strictly speaking, the upper layer 4 is sometimes formed. The surface of the surface is referred to as the main surface 2a of the crucible substrate 2.

<分割之順序> <order of division>

其次,對將具有上述構成之貼合基板10於分割預定位置A分割之順序進行說明。圖2係表示該分割之順序之圖。 Next, the procedure for dividing the bonded substrate 10 having the above-described configuration at the predetermined division position A will be described. Fig. 2 is a view showing the order of the division.

首先,準備如圖1所例示之貼合基板10(步驟S1)。即,準備利用接著層3貼合玻璃基板1與矽基板2而成、且規定有分割預定位置A之貼合基板10。 First, the bonded substrate 10 as illustrated in Fig. 1 is prepared (step S1). In other words, the bonded substrate 10 in which the glass substrate 1 and the ruthenium substrate 2 are bonded together by the adhesive layer 3 and the predetermined predetermined position A is defined is prepared.

然後,於所準備之貼合基板10之玻璃基板1側之分割預定位置A形成劃線SL(圖3)(步驟S2)。圖3係用以說明該劃線SL之形成之圖。再者,於圖3中,例示設定有各者於與附圖垂直之方向直線狀地延伸之多個分割預定位置A之情形(於圖4~圖7中亦相同)。 Then, a scribe line SL (FIG. 3) is formed at a predetermined predetermined position A on the glass substrate 1 side of the prepared bonded substrate 10 (step S2). Fig. 3 is a view for explaining the formation of the scribe line SL. In addition, in FIG. 3, the case where each of the plurality of division predetermined positions A extending linearly in the direction perpendicular to the drawing is set is exemplified (the same applies to FIGS. 4 to 7).

劃線SL為於下述步驟中成為裂痕(垂直裂痕)伸展之起點之部位。劃線SL之形成係如圖3(a)所示,以玻璃基板1成為最上部且矽基板2成為最下部之水平姿勢保持貼合基板10而進行。此時,既可將貼合基板10直接保持於載台,亦可代替此而為如下態樣,即,將矽基板2之主面2a側貼附於例如張設保持於切割環等環狀之保持部件之切割帶等保持帶,並連同這些保持部件及保持帶一起將貼合基板10保持於載台。 The scribe line SL is a portion which becomes a starting point of the crack (vertical crack) stretching in the following step. As shown in FIG. 3( a ), the formation of the scribe line SL is performed by holding the bonded substrate 10 in a horizontal posture in which the glass substrate 1 is at the uppermost portion and the ruthenium substrate 2 is at the lowermost portion. In this case, the bonded substrate 10 may be directly held on the stage, or alternatively, the main surface 2a side of the ruthenium substrate 2 may be attached to, for example, a ring or the like in a ring shape. The holding tape such as the dicing tape of the holding member is held together with the holding member and the holding tape to hold the bonded substrate 10 on the stage.

概略地來說,劃線SL之形成係藉由如下方式來進行,即於將貼合基板10以該姿勢保持於具備特定之劃線工具之未圖示之公知之劃線裝置之載台之狀態下,使該劃線工具於玻璃基板1之主面1a上相對於分割預定位置A而相對地移動。 Roughly, the formation of the scribe line SL is performed by holding the bonded substrate 10 in this position on a stage of a known scribing device (not shown) having a specific scribing tool. In this state, the scribing tool is relatively moved with respect to the division predetermined position A on the main surface 1a of the glass substrate 1.

於圖3(b)中,表示有作為劃線工具使用公知之劃線輪101形成劃線SL之情形。劃線輪101係形成具有將2個圓錐台於各者之下底面(較大之一方之底面)側連接之形狀之圓盤形狀(算盤珠形狀)並且其外周部分成為刀尖之工具。劃線SL係藉由使該劃線輪101(更詳細而言為其刀尖)於玻璃基板1之主面1a上沿著分割預定位置A壓接滾動而形成。再者,刀尖既可遍及劃線輪101之全周為一樣,亦可為週期性地具有凹部之態樣。 FIG. 3(b) shows a case where the scribe line SL is formed using the known scribing wheel 101 as a scribing tool. The scribing wheel 101 is formed into a disk shape (an abacus bead shape) having a shape in which two truncated cones are connected to the lower surface (one of the larger ones) of the bottom surface, and the outer peripheral portion thereof is a tool edge. The scribe line SL is formed by pressing and rolling the scribing wheel 101 (more specifically, the blade edge thereof) on the main surface 1a of the glass substrate 1 along the predetermined dividing position A. Further, the cutting edge may be the same throughout the entire circumference of the scribing wheel 101, or may have a concave portion periodically.

於圖3(b)中如箭頭AR1及AR2所示,相對於各個分割預定位置A依序使劃線輪101壓接滾動而形成劃線SL,最終,如圖3(c)所示於所有分割預定位置A形成有劃線SL。再者,亦可為伴隨該劃線SL之形成而垂直裂痕自劃線SL向玻璃基板1之厚度方向伸展之態樣。 In FIG. 3(b), as indicated by arrows AR1 and AR2, the scribing wheel 101 is sequentially pressed and rolled with respect to each of the divided predetermined positions A to form a scribe line SL, and finally, as shown in FIG. 3(c). The division predetermined position A is formed with a scribe line SL. Further, a vertical crack may be extended from the scribe line SL in the thickness direction of the glass substrate 1 along with the formation of the scribe line SL.

又,作為劃線工具,亦可為使用公知之金剛石頭及其他之態樣。 Further, as the scribing tool, a known diamond head or the like may be used.

當相對於玻璃基板1側之分割預定位置形成有劃線SL時,繼而於貼合基板10之矽基板2側之分割預定位置A進行切割而形成切割槽DG(圖4)(步驟S3)。圖4及圖5係用以說明該切割槽DG之形成之圖。切割槽DG形成為槽部,且於下述步驟中成為裂斷之起點。 When the scribe line SL is formed at a predetermined predetermined position on the side of the glass substrate 1, the dicing groove DG (FIG. 4) is formed by cutting at a predetermined predetermined position A on the side of the slab substrate 2 on the bonded substrate 10 (step S3). 4 and 5 are views for explaining the formation of the cutting groove DG. The cutting groove DG is formed as a groove portion, and becomes a starting point of the crack in the following steps.

切割槽DG之形成係如圖4(a)所示,以矽基板2成為最上部,且玻璃基板1成為最下部之水平姿勢保持貼合基板10而進行。即,藉由以與劃線SL形成時反轉之姿勢保持貼合基板10而進行。此時,貼合基板10既可直接保持於載台,亦可代替此而為如下態樣,即,將玻璃基板1之主面1a側貼附於例如張設保持於切割環等環狀之保持部件之切割帶等保持帶,並連同這些保持部件及保持帶一起將貼合基板10保持於載台。 As shown in FIG. 4( a ), the formation of the dicing groove DG is performed by holding the bonded substrate 10 in a horizontal posture in which the ruthenium substrate 2 is at the uppermost position and the glass substrate 1 is at the lowermost position. That is, it is performed by holding the bonded substrate 10 in a posture in which it is reversed when the scribe line SL is formed. In this case, the bonded substrate 10 may be directly held on the stage, or may be attached to the main surface 1a side of the glass substrate 1 by, for example, being stretched and held in a ring shape such as a cutting ring. A holding tape such as a dicing tape of the holding member is held, and the bonding substrate 10 is held on the stage together with the holding member and the holding tape.

如圖4(b)所示,切割槽DG形成為貫通矽基板2並到達接著層3為止之槽部。換句話說,切割槽DG以其深度h大於矽基板2之厚度、且小於矽基板2與接著層3之厚度之總和之方式形成。再者,雖詳細情形於下文敍述,但切割槽DG之尺寸(深度h、寬度w)、切割槽DG之底部DG1與接著層3之距離d係根據對應於接著層3之材質來選擇之下述裂斷步驟中之裂斷方法而規定。 As shown in FIG. 4(b), the dicing groove DG is formed as a groove portion that penetrates the ruthenium substrate 2 and reaches the subsequent layer 3. In other words, the cutting groove DG is formed such that its depth h is larger than the thickness of the tantalum substrate 2 and smaller than the sum of the thicknesses of the tantalum substrate 2 and the adhesive layer 3. Further, although the details are described below, the size (depth h, width w) of the cutting groove DG, the distance d between the bottom DG1 of the cutting groove DG and the adhesive layer 3 are selected according to the material corresponding to the adhesive layer 3. It is specified in the cracking method in the breaking step.

概略地來說,切割槽DG之形成係藉由如下方式來進行,即於將貼合基板10以該姿勢保持於具備特定之切割機構之未圖示之公知之切割裝置(切割機)之載台之狀態下,於矽基板2之主面2a側之分割預定 位置A於厚度方向及寬度方向之特定範圍藉由切割機構進行切削。 Roughly, the formation of the cutting groove DG is carried out by holding the bonded substrate 10 in this position in a known cutting device (cutting machine) (not shown) having a specific cutting mechanism. In the state of the stage, the division of the main surface 2a side of the substrate 2 is scheduled The position A is cut by a cutting mechanism in a specific range in the thickness direction and the width direction.

於圖4(b)及圖4(c)中,表示有作為切割機構使用具備公知之切割刀片201之切割機而形成切割槽DG之情形。切割刀片201係呈圓板狀(圓環狀)且其外周部分成為刀尖之工具。於使用切割刀片201形成切割槽DG之情形時,首先,一面使該切割刀片201以其主面成為與鉛垂面平行之姿勢於鉛垂面內旋轉,一面如圖4(b)中箭頭AR3所示般使該切割刀片201下降,進而如圖4(c)中箭頭AR4所示般使其下降,直到其刀尖部分到達與所要形成之切割槽DG之深度h對應之目標深度位置為止。然後,當刀尖部分到達目標深度位置時,一面保持該旋轉狀態,一面沿著分割預定位置A(即沿著分斷進展預定位置B)使切割刀片201相對於貼合基板10相對移動,由此形成切割槽DG。 4(b) and 4(c), there is shown a case where a cutting groove DG is formed using a cutter having a known cutting blade 201 as a cutting mechanism. The cutting blade 201 has a disk shape (annular shape) and its outer peripheral portion serves as a tool for the blade edge. When the cutting blade 201 is used to form the cutting groove DG, first, the cutting blade 201 is rotated in the vertical plane with the main surface thereof being parallel to the vertical surface, as shown by an arrow AR3 in FIG. 4(b). The cutting blade 201 is lowered as shown, and is lowered as indicated by an arrow AR4 in Fig. 4(c) until its tip end portion reaches a target depth position corresponding to the depth h of the cutting groove DG to be formed. Then, when the blade tip portion reaches the target depth position, while maintaining the rotation state, the cutting blade 201 is relatively moved relative to the bonding substrate 10 along the predetermined dividing position A (ie, along the breaking progress predetermined position B). This forms a cutting groove DG.

當如圖4(b)中箭頭AR5及AR6所示,或者如圖4(c)中箭頭AR7及AR8所示,若使切割刀片201相對於各個分割預定位置A依序移動而形成切割槽DG,最終將如圖5所示於所有的分割預定位置A形成切割槽DG。 When the cutting blades 201 are sequentially moved with respect to the respective divided predetermined positions A as shown by arrows AR5 and AR6 in FIG. 4(b) or as indicated by arrows AR7 and AR8 in FIG. 4(c), the cutting grooves DG are formed. Finally, the cutting groove DG is formed at all the divided predetermined positions A as shown in FIG.

當一旦形成切割槽DG時,則貼合基板10實現如下狀態,即於所有的分割預定位置A,於一方主面側形成有劃線SL,且於另一方主面側形成有切割槽DG。 When the dicing groove DG is formed, the bonded substrate 10 is in a state in which the scribe line SL is formed on one main surface side and the dicing groove DG is formed on the other main surface side at all the predetermined division positions A.

實現該狀態之貼合基板10成為能夠實施以下裂斷步驟之基板,但根據貼合基板10之種類,更詳細而言,根據藉由將該貼合基板10分割而獲得之晶片之種類,亦可為如下態樣,即於該裂斷之前,於矽基板2之主面2a上,更嚴格而言於圖3至圖5中省略圖示之上部層4上形成焊料球SB(步驟S4)。圖6係例示形成焊料球SB之後之貼合基板10之圖。焊料球SB形成於矽基板2之主面2a上之(更詳細而言為上部層4之主面上之)、藉由最終予以分割而分別成為個別晶片之每一區域。惟焊料球SB之形成並非為必須。 The bonded substrate 10 in this state is a substrate capable of performing the following cracking step. However, depending on the type of the bonded substrate 10, more specifically, the type of the wafer obtained by dividing the bonded substrate 10 is also The solder ball SB may be formed on the main surface 2a of the ruthenium substrate 2, and more strictly, the upper surface layer 4 is omitted in FIGS. 3 to 5 before the rupture (step S4). . FIG. 6 is a view exemplifying the bonded substrate 10 after the solder balls SB are formed. Solder balls SB are formed on the main surface 2a of the ruthenium substrate 2 (more specifically, on the main surface of the upper layer 4), and are finally divided into individual regions of the individual wafers. However, the formation of the solder ball SB is not necessary.

再者,焊料球SB亦可為於劃線SL形成前之時間點、即最初準備貼合基板之時間點形成之態樣,或於劃線SL形成之形成後且切割槽DG形成前之時間點形成之態樣。惟於前者之情形時,必須於劃線SL之形成時將形成有焊料球SB之具有凹凸之矽基板2之主面2a側朝向下方而保持貼合基板10,於後者之情形時,存在因於切割時除去切削碎片或清洗切割槽DG等所使用之水而腐蝕焊料球SB之情形等,有其各自應留意之點,但於上述切割槽DG形成後之時序形成焊料球SB之態樣則與上述留意點無關,因此較佳。 Further, the solder ball SB may be formed at a time point before the formation of the scribe line SL, that is, at a time point at which the substrate is initially prepared to be bonded, or after the formation of the scribe line SL and before the formation of the dicing groove DG. The form of point formation. In the case of the former, it is necessary to hold the bonded substrate 10 with the main surface 2a side of the substrate 2 having the unevenness of the solder ball SB formed while the scribing SL is formed, and in the latter case, there is a cause. In the case of removing the cutting chips during cleaning, cleaning the water used in the cutting groove DG, etc., and etching the solder balls SB, there are points to be noted, but the timing of forming the solder balls SB at the timing after the formation of the cutting grooves DG is formed. It is not related to the above points of attention, so it is preferable.

又,形成劃線SL與形成切割槽DG之順序亦可相反。 Further, the order in which the scribe lines SL are formed and the dicing grooves DG are formed may be reversed.

於將劃線SL與切割槽DG皆形成、且於必要之情形時形成焊料球SB之後,進行使用裂斷裝置300之裂斷,而於劃線SL與切割槽DG之間,使沿著分斷進展預定位置B之分斷進展(步驟S5)。 After the scribe line SL and the dicing groove DG are both formed, and if necessary, the solder ball SB is formed, the cracking using the rupture device 300 is performed, and between the scribe line SL and the cutting groove DG, The progress of the breaking of the predetermined position B is progressed (step S5).

圖7係概略性地表示使用裂斷裝置300將貼合基板10裂斷之情形之圖。 FIG. 7 is a view schematically showing a state in which the bonded substrate 10 is broken by the breaking device 300.

裂斷裝置300主要具備:支持部301,包含彈性體,且於上表面301a載置貼合基板10;及裂斷刀302,具有於特定之刀片長度方向延伸之剖視三角形狀之刀尖,且於鉛垂方向升降自如。 The breaking device 300 mainly includes a support portion 301 including an elastic body, and the laminated substrate 10 is placed on the upper surface 301a, and the splitting blade 302 has a cutting edge triangular shape extending in the longitudinal direction of the specific blade. And it moves up and down in the vertical direction.

支持部301較佳為由硬度為65°~95°,較佳為70°~90°,例如為80°之材質之彈性體形成。作為該支持部301,例如可較佳地使用矽酮橡膠等。再者,支持部301亦可進而藉由未圖示之硬質之(不具有彈性之)支持體而支持其下方。 The support portion 301 is preferably formed of an elastomer having a hardness of 65 to 95, preferably 70 to 90, for example, 80. As the support portion 301, for example, an anthrone rubber or the like can be preferably used. Furthermore, the support portion 301 can be further supported by a rigid (non-elastic) support (not shown).

如圖7所示,於裂斷時,貼合基板10以形成有切割槽DG之矽基板2之側成為最上部、形成有劃線SL之玻璃基板1之側成為最下部之方式被載置於支持部301之上表面301a上。再者,於圖7中表示有如下情形,即以分割預定位置A(因此劃線SL與切割槽DG)於與附圖垂直之方向延伸之方式將貼合基板10載置於支持部301之上表面301a,並且於 該分割預定位置A之鉛垂上方,裂斷刀302(更詳細而言其刀尖)沿著分割預定位置A之延伸方向而配置。 As shown in Fig. 7, at the time of the fracture, the bonded substrate 10 is placed such that the side of the substrate 2 on which the dicing groove DG is formed is the uppermost portion, and the side of the glass substrate 1 on which the scribe line SL is formed is the lowermost portion. On the upper surface 301a of the support portion 301. Further, FIG. 7 shows a case where the bonded substrate 10 is placed on the support portion 301 so as to extend the predetermined position A (so that the scribe line SL and the dicing groove DG) extend in the direction perpendicular to the drawing. Upper surface 301a, and The splitting cutter 302 (more specifically, the cutting edge) is disposed vertically above the divided predetermined position A along the extending direction of the divided predetermined position A.

使用該裂斷裝置300之裂斷概略地來說藉由如下方式來實現,即,使裂斷刀302如箭頭AR9所示於鉛垂方向相對於矽基板2側之分割預定位置A(即切割槽DG之形成位置)下降,於裂斷刀302與貼合基板10抵接之後亦下壓裂斷刀302。然後,如箭頭AR10所示,藉由相對於所有分割預定位置A依序完成裂斷,而將貼合基板10分割為所期望之尺寸及個數之晶片。 The rupture of the rupture device 300 is roughly achieved by cutting the predetermined position A (ie, cutting) in the vertical direction with respect to the 矽 substrate 2 side as indicated by an arrow AR9. The formation position of the groove DG is lowered, and the cutter 302 is also fractured after the split blade 302 abuts against the bonded substrate 10. Then, as shown by the arrow AR10, the bonded substrate 10 is divided into wafers of a desired size and number by sequentially performing the cracking with respect to all the divided predetermined positions A.

更詳細而言,於本實施方式中,根據接著層3之材質而分開使用原理不同之兩種裂斷方法。於該情形時,根據所選擇之裂斷方法,而使裂斷刀302之刀尖302a(參照圖8、圖9)之形狀或切割槽DG之尺寸分別不同。以下,對兩種裂斷方法依序進行說明。 More specifically, in the present embodiment, two kinds of cracking methods different in principle are used separately depending on the material of the adhesive layer 3. In this case, the shape of the blade edge 302a (see FIGS. 8 and 9) or the size of the cutting groove DG of the splitting blade 302 are different depending on the selected breaking method. Hereinafter, two types of cracking methods will be described in order.

(第1裂斷方法) (1st splitting method)

圖8係用以表示第1裂斷方法之圖。第1裂斷方法係藉由使裂斷刀302如圖7中箭頭AR9所示於鉛垂方向下降而最終產生之裂斷刀302相對於切割槽DG之抵接,首先最初如圖8(a)所示於刀尖302a之前端與切割槽DG之底部DG1之間實現之後使分斷進展。 Fig. 8 is a view showing a first breaking method. The first breaking method is abutting against the cutting groove DG by causing the splitting blade 302 to descend in the vertical direction as indicated by an arrow AR9 in Fig. 7, firstly as shown in Fig. 8 (a) ) is shown to progress between the front end of the cutting edge 302a and the bottom DG1 of the cutting groove DG.

具體而言,當如圖8(b)中箭頭AR11所示,刀尖302a之前端與切割槽DG之底部DG1抵接之後亦將裂斷刀302以特定之力向鉛垂下方下壓時,如箭頭AR12所示刀尖302a自接著層3受到阻力,並且亦一面沿著分斷進展預定位置B將接著層3切開一面下降。由此,接著層3之分斷進展。 Specifically, when the front end of the cutting edge 302a abuts against the bottom DG1 of the cutting groove DG as shown by an arrow AR11 in FIG. 8(b), the splitting blade 302 is also pressed downward by a specific force. The blade edge 302a receives resistance from the adhesive layer 3 as indicated by the arrow AR12, and also descends on the side of the layer 3 as it is cut along the predetermined position B. Thereby, the division of the layer 3 proceeds.

又,此時,由於將裂斷刀302向鉛垂下方下壓之力亦作為將貼合基板10相對於作為彈性體之支持部301沿著分割預定位置A壓入之力起作用,因此貼合基板10會自支持部301相對於劃線SL對稱地受到如箭頭AR13所示之向上之發作用力。於係,作為該發作用力與自裂斷 刀302作用之向鉛垂下方之力相加之結果,於貼合基板10之玻璃基板1側實現所謂3點彎曲之狀況,如箭頭AR14所示,垂直裂痕CR自劃線SL沿著分斷進展預定位置B向鉛垂上方伸展。 In this case, the force which presses the split blade 302 downward in the vertical direction also acts as a force for pressing the bonded substrate 10 against the support portion 301 as the elastic body along the predetermined position A. The combined substrate 10 is symmetrical with respect to the scribe line SL from the support portion 301 by an upward urging force as indicated by an arrow AR13. In the system, as the force and self-break As a result of the force applied to the lower side of the knife 302, the so-called three-point bending is achieved on the side of the glass substrate 1 of the bonded substrate 10. As indicated by the arrow AR14, the vertical crack CR is separated from the scribe line SL. The progress predetermined position B extends vertically upward.

利用裂斷刀302之自鉛垂上方之接著層3之分斷(切開)與自鉛垂下方之玻璃基板1之垂直裂痕CR之伸展均沿著分斷進展預定位置B進展。當最終兩者均到達接著層3與玻璃基板1之界面時完成分斷。即,貼合基板10如圖8(c)所示會被分割為2個單片10a。 The breaking (cutting) of the bonding layer 3 from the upper side by the splitting blade 302 and the stretching of the vertical crack CR of the glass substrate 1 from the lower side of the slitting knife 302 progress along the breaking progress predetermined position B. The breaking is completed when both of them finally reach the interface between the layer 3 and the glass substrate 1. That is, the bonded substrate 10 is divided into two single pieces 10a as shown in FIG. 8(c).

於利用如以上之第1裂斷方法進行裂斷之情形時,必須以當使裂斷刀302下降時至少於刀尖302a之前端與切割槽DG之底部DG1抵接之前不使刀尖302a與切割槽DG接觸之方式規定切割槽DG之尺寸,並且必須規定與刀跨度方向垂直之截面上之刀尖302a所成之角即刀尖角θ。通常,與下述第2裂斷方法相比,會使切割槽DG之尺寸相對較大,且使刀尖角θ相對較小。 In the case of performing the splitting by the first breaking method as described above, it is necessary to prevent the cutting edge 302a from being engaged with the cutting edge 302 DG before the cutting edge 302 is lowered at least before the leading end of the cutting edge 302a abuts against the bottom DG1 of the cutting groove DG. The manner in which the cutting groove DG is in contact is defined by the size of the cutting groove DG, and the angle formed by the cutting edge 302a in the cross section perpendicular to the blade span direction, that is, the cutting edge angle θ must be specified. In general, the size of the cutting groove DG is relatively larger than that of the second breaking method described below, and the cutting edge angle θ is relatively small.

(第2裂斷方法) (second break method)

圖9係用以表示第2裂斷方法之圖。第2裂斷方法係藉由使裂斷刀302如圖7中箭頭AR9所示於鉛垂方向下降而最終產生之裂斷刀302相對於切割槽DG之抵接首先最初如圖9(a)所示於刀尖302a之2個側面302b之各者與切割槽DG之對應之開口端部DG2之間進行之後,使分斷進展。此處,所謂切割槽DG之開口端部DG2係指矽基板2之表面上之切割槽DG之邊緣部分。 Fig. 9 is a view showing a second breaking method. The second breaking method is abutting against the cutting groove DG by causing the splitting blade 302 to descend in the vertical direction as indicated by an arrow AR9 in Fig. 7, firstly as shown in Fig. 9(a). After each of the two side faces 302b of the blade edge 302a is formed between the corresponding opening end portion DG2 of the cutting groove DG, the cutting progresses. Here, the opening end portion DG2 of the cutting groove DG refers to the edge portion of the cutting groove DG on the surface of the ruthenium substrate 2.

具體而言,當如圖9(b)中箭頭AR21所示刀尖302a之側面302b與切割槽DG之開口端部DG2抵接之後亦將裂斷刀302以特定之力向鉛垂下方下壓時,刀尖302a之2個側面302b之各者如箭頭AR22所示,使相對於分割預定位置A對稱且相互背離之方向之力作用在於傾斜方向接觸之切割槽DG之對應之開口端部DG2。 Specifically, when the side surface 302b of the cutting edge 302a is abutted against the open end DG2 of the cutting groove DG as indicated by an arrow AR21 in FIG. 9(b), the splitting blade 302 is also pressed downward by a specific force. When the two side faces 302b of the blade edge 302a are each as shown by the arrow AR22, the force which is symmetrical with respect to the predetermined position A and deviates from each other acts on the corresponding opening end DG2 of the cutting groove DG which is in the oblique direction contact. .

如果於該態樣下開口端部DG2受到力,則如箭頭AR23所示,於 接著層3之未形成切割槽DG之部位,產生相對於分斷進展預定位置B對稱且相反方向之力。裂斷刀302之下壓越推進則該力越大,最終接著層3自切割槽DG之底部DG1向箭頭AR24所示之鉛垂下方劈開。其結果,於接著層3形成有沿著分斷進展預定位置B之龜裂CR1。龜裂CR1最終到達接著層3與玻璃基板1之界面。 If the open end DG2 is subjected to a force in this state, as indicated by the arrow AR23, Then, the portion of the layer 3 where the cutting groove DG is not formed generates a force which is symmetrical with respect to the predetermined position B of the breaking progress and in the opposite direction. The force is increased as the pressure of the splitting knife 302 is increased, and finally the layer 3 is opened from the bottom DG1 of the cutting groove DG to the vertical downward direction indicated by the arrow AR24. As a result, the crack CR1 along the predetermined position B of the breaking progress is formed in the subsequent layer 3. The crack CR1 finally reaches the interface between the subsequent layer 3 and the glass substrate 1.

當於該龜裂CR1形成之後亦將裂斷刀302向鉛垂下方下壓時,裂斷刀302對貼合基板10賦予之力作為將貼合基板10相對於作為彈性體之支持部301沿著分割預定位置A壓入之力起作用。因此,與第1裂斷方法之情形相同,貼合基板10如箭頭AR25所示會自支持部301受到向鉛垂上方之發作用力。因此,於貼合基板10之玻璃基板1側實現3點彎曲之狀況,如箭頭AR26所示,垂直裂痕CR2自劃線SL沿著分斷進展預定位置B向鉛垂上方伸展。最終,當垂直裂痕CR2到達接著層3與玻璃基板1之界面時完成分斷。即,貼合基板10如圖9(c)所示會被分割為2個單片10a。 When the splitting blade 302 is pressed downward in the vertical direction after the formation of the crack CR1, the force applied to the bonded substrate 10 by the splitting blade 302 is used as the supporting substrate 10 with respect to the support portion 301 as an elastic body. The force of pressing the predetermined position A is effective. Therefore, as in the case of the first breaking method, the bonded substrate 10 receives a force acting upward from the support portion 301 as indicated by an arrow AR25. Therefore, the three-point bending is realized on the side of the glass substrate 1 of the bonded substrate 10. As indicated by an arrow AR26, the vertical crack CR2 extends vertically from the scribe line SL along the breaking progress predetermined position B. Finally, the breaking is completed when the vertical crack CR2 reaches the interface between the bonding layer 3 and the glass substrate 1. That is, the bonded substrate 10 is divided into two single pieces 10a as shown in FIG. 9(c).

於利用如以上之第2裂斷方法進行裂斷之情形時,必須以當使裂斷刀302下降時於刀尖302a之前端與切割槽DG之底部DG1抵接之前,刀尖302a之側面302b與切割槽DG之開口端部DG2接觸之方式規定切割槽DG之尺寸並且決定刀尖角θ。通常,與上述第1裂斷方法相比,會使切割槽DG之尺寸相對較小,且使刀尖角θ相對較大。又,關於切割槽DG之底部DG1與接著層3之距離d,亦必須考慮與裂斷刀302之壓入量之平衡來規定。其原因在於,如果距離d過大,則存在龜裂CR1無法到達接著層3與玻璃基板1之界面之可能性。 When the crack is broken by the second splitting method as described above, the side 302b of the cutting edge 302a must be before the front end of the cutting edge 302a abuts against the bottom DG1 of the cutting groove DG when the splitting blade 302 is lowered. The size of the cutting groove DG is defined in contact with the opening end DG2 of the cutting groove DG and the blade angle θ is determined. In general, the size of the cutting groove DG is relatively smaller than that of the first breaking method described above, and the cutting edge angle θ is relatively large. Further, the distance d between the bottom DG1 of the cutting groove DG and the adhesive layer 3 must also be determined in consideration of the balance with the amount of pressing of the split blade 302. This is because if the distance d is too large, there is a possibility that the crack CR1 cannot reach the interface between the adhesive layer 3 and the glass substrate 1.

再者,第1裂斷方法與第2裂斷方法之分開使用較佳為考慮接著層3之材質(組成、黏性、彈性等)而選擇。例如,於接著層3之黏性較高之情形時,存在利用裂斷刀302之切開難以較佳地進展之傾向,因此與第1裂斷方法相比應用第2裂斷方法,則可較佳地進行分斷之可能 性較高。 Further, the use of the first splitting method and the second splitting method is preferably selected in consideration of the material (composition, viscosity, elasticity, etc.) of the adhesive layer 3. For example, when the adhesiveness of the adhesive layer 3 is high, there is a tendency that the cutting by the splitting blade 302 is difficult to progress preferably. Therefore, when the second cracking method is applied as compared with the first cracking method, The possibility of breaking down Higher sex.

或者,亦可於最初裂斷時利用相當於第1裂斷方法之方法使分斷進展,然後,一面亦實現使刀尖302a之側面302b與切割槽DG之開口端部DG2抵接之狀態,一面使裂斷進展。 Alternatively, the breaking may be performed by the method corresponding to the first breaking method at the time of initial cracking, and then the side surface 302b of the cutting edge 302a may be brought into contact with the opening end portion DG2 of the cutting groove DG. One side makes the break progress.

如以上所說明,根據本實施方式,藉由如下方式進行利用接著層貼合矽基板與玻璃基板而成之貼合基板之分割而能夠較佳地分割該貼合基板,即於玻璃基板側之分割預定位置形成劃線,且於矽基板側之分割預定位置形成到達接著層之切割槽,並且藉由裂斷而於劃線與切割槽之間使分斷進展。由於不切割玻璃基板,因此抑制玻璃基板產生碎屑,又,實現生產性之提高及成本之降低。又,水亦不會滲入至接著層與玻璃基板之間。 As described above, according to the present embodiment, the bonded substrate can be preferably divided by the division of the bonded substrate obtained by bonding the ruthenium substrate and the glass substrate by the subsequent layer, that is, on the side of the glass substrate. The scribe line is formed at a predetermined position, and a dicing groove reaching the contiguous layer is formed at a predetermined predetermined position on the side of the cymbal substrate, and the breaking progress is made between the scribe line and the dicing groove by cleavage. Since the glass substrate is not cut, chipping of the glass substrate is suppressed, and productivity and cost are reduced. Moreover, water does not penetrate between the adhesive layer and the glass substrate.

1‧‧‧玻璃基板 1‧‧‧ glass substrate

1a‧‧‧(玻璃基板之)主面 1a‧‧‧ (glass substrate) main surface

2‧‧‧矽基板 2‧‧‧矽 substrate

2a‧‧‧(矽基板之)主面 2a‧‧‧ (on the substrate)

3‧‧‧接著層 3‧‧‧Next layer

10‧‧‧貼合基板 10‧‧‧Fixed substrate

300‧‧‧裂斷裝置 300‧‧‧breaking device

301‧‧‧支持部 301‧‧‧Support Department

301a‧‧‧(支持部之)上表面 301a‧‧‧ (support) upper surface

302‧‧‧裂斷刀 302‧‧‧ splitting knife

AR9‧‧‧箭頭 AR9‧‧‧ arrow

AR10‧‧‧箭頭 AR10‧‧‧ arrow

DG‧‧‧切割槽 DG‧‧ cutting slot

SL‧‧‧劃線 SL‧‧‧

Claims (8)

一種貼合基板之分割方法,其特徵在於:其係將利用接著層貼合矽基板與玻璃基板而成之貼合基板於特定之分割預定位置加以分割之方法,且包括:劃線形成步驟,其係於成為上述貼合基板之一方主面之上述玻璃基板之一主面之上述分割預定位置,藉由特定之劃線工具形成劃線;切割槽形成步驟,其係於成為上述貼合基板之另一方主面之上述矽基板之一主面之上述分割預定位置,自上述矽基板之上述一主面直至上述接著層之中途利用特定之槽部形成機構形成槽部;及裂斷步驟,其係將形成有上述劃線與上述槽部之上述貼合基板於上述劃線與上述槽部之間裂斷。 A method for dividing a bonded substrate, which is characterized in that a bonded substrate obtained by bonding a tantalum substrate and a glass substrate to a specific predetermined position is divided by a bonding layer, and includes a scribing forming step, And forming a scribe line by a specific scribe line tool at a predetermined predetermined position of one of the main surfaces of the glass substrate which is one of the main surfaces of the bonded substrate; and a dicing groove forming step for forming the bonded substrate a predetermined predetermined position of the main surface of the one of the base surfaces of the other main surface, wherein the groove portion is formed by a specific groove forming mechanism from the one main surface of the base substrate to the middle of the adhesive layer; and a cracking step The bonded substrate on which the scribe line and the groove portion are formed is ruptured between the scribe line and the groove portion. 如請求項1之貼合基板之分割方法,其中於上述裂斷步驟中,於將上述貼合基板以上述矽基板側成為最上部、且上述玻璃基板側成為最下部之方式載置於包含彈性體之支持部之上表面之狀態下,使裂斷刀自上述矽基板之上方相對於上述分割預定位置抵接並進而下壓,由此將上述貼合基板分斷。 The method of dividing a bonded substrate according to claim 1, wherein the bonding substrate is placed on the bonded substrate such that the side of the substrate is the uppermost portion and the side of the glass substrate is the lowermost portion. In the state of the upper surface of the support portion of the body, the split blade is brought into contact with the predetermined predetermined position from the upper side of the above-mentioned ruthenium substrate, and further pressed, thereby separating the bonded substrate. 如請求項2之貼合基板之分割方法,其中於上述裂斷步驟中,使上述裂斷刀抵接於上述槽部之底部並且進而下壓,由此一面藉由上述裂斷刀將上述接著層切開,一面使垂直裂痕自上述劃線伸展,從而將上述貼合基板分斷。 The method for dividing a bonded substrate according to claim 2, wherein in the breaking step, the splitting blade is brought into contact with the bottom of the groove portion and further pressed, whereby the above-mentioned step is performed by the splitting blade The layer is cut and the vertical crack is stretched from the above-mentioned scribe line to break the bonded substrate. 如請求項2之貼合基板之分割方法,其中於上述裂斷步驟中,使上述裂斷刀之刀尖側面抵接於上述矽基板之上述一主面之上述槽部之開口端部後再進而下壓,由此將上述接著層劈開並且使 垂直裂痕自上述劃線伸展,從而將上述貼合基板分斷。 The method of dividing a bonded substrate according to claim 2, wherein in the breaking step, the blade edge side of the splitting blade is brought into contact with the opening end of the groove portion of the one main surface of the base plate, and then Further pressing down, thereby peeling off the above layer and making The vertical crack extends from the scribing line to break the bonded substrate. 如請求項1至4中任一項之貼合基板之分割方法,其中上述特定之劃線工具為劃線輪。 The method of dividing a bonded substrate according to any one of claims 1 to 4, wherein the specific scribing tool is a scribing wheel. 如請求項1至4中任一項之貼合基板之分割方法,其中上述特定之槽部形成機構為切割機。 The method of dividing a bonded substrate according to any one of claims 1 to 4, wherein the specific groove forming mechanism is a cutter. 如請求項5之貼合基板之分割方法,其中上述特定之槽部形成機構為切割機。 The method of dividing a bonded substrate according to claim 5, wherein the specific groove forming mechanism is a cutter. 一種貼合基板之分割裝置,其特徵在於:其係將利用接著層貼合矽基板與玻璃基板而成之貼合基板於特定之分割預定位置加以分割者,且具備:劃線形成單元,其於成為上述貼合基板之一方主面之上述玻璃基板之一主面之上述分割預定位置,藉由特定之劃線工具形成劃線;切割槽形成單元,其於成為上述貼合基板之另一方主面之上述矽基板之一主面之上述分割預定位置,自上述矽基板之上述一主面直至上述接著層之中途利用特定之槽部形成機構形成槽部;及裂斷單元,其將形成有上述劃線與上述槽部之上述貼合基板於上述劃線與上述槽部之間裂斷。 A device for splicing a substrate, wherein the bonded substrate obtained by bonding a ruthenium substrate and a glass substrate to a predetermined layer is divided by a predetermined predetermined position, and includes a scribe line forming unit. Forming a scribe line by a specific scribing tool on the main division surface of one of the main surfaces of the glass substrate which is one of the main surfaces of the bonded substrate; the dicing groove forming unit is the other side of the bonded substrate a predetermined position of the main surface of one of the ruthenium substrates on the main surface, a groove portion is formed by a specific groove portion forming mechanism from the one main surface of the ruthenium substrate to the middle layer; and a rupture unit is formed The bonded substrate having the scribe line and the groove portion is broken between the scribe line and the groove portion.
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Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5874600A (en) * 1981-10-28 1983-05-06 Nec Corp Cleaving method for single crystal substrate
JP2936851B2 (en) 1991-12-20 1999-08-23 日本電気株式会社 Method of holding deployable membrane structure
JPH0864556A (en) * 1994-08-19 1996-03-08 Nec Corp Separation of glass substrate
JP2001284290A (en) * 2000-03-31 2001-10-12 Toyoda Gosei Co Ltd Chip division method for semiconductor wafer
WO2002057192A1 (en) * 2001-01-17 2002-07-25 Mitsuboshi Diamond Industrial Co., Ltd. Separator and separating system
JP4750519B2 (en) * 2005-09-16 2011-08-17 株式会社ディスコ Cutting method and cutting apparatus
JP2007165789A (en) * 2005-12-16 2007-06-28 Olympus Corp Method for manufacturing semiconductor device
JP4730345B2 (en) * 2007-06-18 2011-07-20 ソニー株式会社 Display device having glass substrate pair and cutting method thereof
JP5436906B2 (en) * 2009-03-26 2014-03-05 ラピスセミコンダクタ株式会社 Manufacturing method of semiconductor device
JP5381240B2 (en) * 2009-03-31 2014-01-08 凸版印刷株式会社 IC chip and manufacturing method thereof
JP5170196B2 (en) * 2010-09-24 2013-03-27 三星ダイヤモンド工業株式会社 Method for dividing brittle material substrate with resin
JP5170195B2 (en) * 2010-09-24 2013-03-27 三星ダイヤモンド工業株式会社 Method for dividing brittle material substrate with resin
JP2013089622A (en) * 2011-10-13 2013-05-13 Mitsuboshi Diamond Industrial Co Ltd Breaking method of semiconductor substrate
JP2013122984A (en) * 2011-12-12 2013-06-20 Canon Inc Semiconductor device manufacturing method
JP5824365B2 (en) * 2012-01-16 2015-11-25 三星ダイヤモンド工業株式会社 Breaking method for brittle material substrate
TWI589420B (en) * 2012-09-26 2017-07-01 Mitsuboshi Diamond Ind Co Ltd Metal multilayer ceramic substrate breaking method and trench processing tools
JP6140030B2 (en) * 2013-08-21 2017-05-31 三星ダイヤモンド工業株式会社 Method for dividing wafer laminate for image sensor
JP6185813B2 (en) * 2013-09-30 2017-08-23 三星ダイヤモンド工業株式会社 Method and apparatus for dividing wafer laminate for image sensor
JP6115438B2 (en) * 2013-10-16 2017-04-19 三星ダイヤモンド工業株式会社 Breaking device and cutting method
JP6005708B2 (en) * 2014-10-23 2016-10-12 三星ダイヤモンド工業株式会社 Method and apparatus for dividing wafer laminate for image sensor

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