WO2020045182A1 - 半導体素子接合構造、半導体素子接合構造の生成方法及び導電性接合剤 - Google Patents

半導体素子接合構造、半導体素子接合構造の生成方法及び導電性接合剤 Download PDF

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WO2020045182A1
WO2020045182A1 PCT/JP2019/032599 JP2019032599W WO2020045182A1 WO 2020045182 A1 WO2020045182 A1 WO 2020045182A1 JP 2019032599 W JP2019032599 W JP 2019032599W WO 2020045182 A1 WO2020045182 A1 WO 2020045182A1
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metal
particles
semiconductor element
bonding
metal particles
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PCT/JP2019/032599
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English (en)
French (fr)
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巽　宏平
田中　康紀
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学校法人早稲田大学
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Publication of WO2020045182A1 publication Critical patent/WO2020045182A1/ja
Priority to US17/187,452 priority Critical patent/US11810885B2/en

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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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Definitions

  • the present invention relates to a bonding structure of a semiconductor element formed by bonding and bonding one metal particle having a relatively low hardness and a micro-size particle size to another metal particle having a face-centered cubic crystal structure.
  • semiconductors using Si have an operating temperature of about 150 ° C. or lower, but compound semiconductors such as SiC and GaN can operate at higher temperatures. If high-temperature operation becomes possible, operation at a high current density becomes possible, and the advantages particularly in power devices are great. It is expected that cooling devices for inverters of electric vehicles and hybrid vehicles will be simplified.
  • the joining using solder widely used in the current semiconductor mounting technology has a melting point of 200 to several tens of degrees Celsius, and it is difficult to use at a temperature higher than the melting point. Further, even when the temperature is 200 ° C. or lower, it is known that a connection failure occurs due to thermal stress or the like in long-term use. Therefore, a new high heat-resistant mounting technology is required.
  • metal nanoparticle materials such as silver and copper have been promoted.
  • silver is expensive, and there is a concern that oxidation and migration may occur.
  • Copper itself is subject to oxidation.
  • the sintered body of metal nanoparticles has a large specific surface area, it forms or adsorbs on the surface. Oxygen and carbon atoms are taken into the interior during sintering, so the yield stress increases compared to pure metal. At the same time, they tend to become brittle, and a sufficient stress relaxation effect on thermal stress was not observed.
  • Patent Documents 1 and 2 the inventors focused on Ni particles having a melting point of 1453 ° C., higher than silver and copper, and an electric resistance of 6.99 ⁇ 10 ⁇ 8 ⁇ cm, which is relatively low.
  • the electric resistances of the Sn—Pb eutectic solder and the lead-free solder (Sn—Ag—Cu), which have been widely used in the past, are 15 ⁇ 10 ⁇ 8 ⁇ cm and 11 ⁇ 10 ⁇ 8 ⁇ cm, respectively.
  • the coefficient of thermal expansion of Ni is 13.3 ⁇ 10 ⁇ 6 , lower than 17 ⁇ 10 ⁇ 6 of copper and 19 ⁇ 10 ⁇ 6 of silver, and is closer to the coefficients of thermal expansion of Si and SiC.
  • Patent Document 1 includes metal nanoparticles between a surface to be bonded of a first body to be bonded (first surface to be bonded) and a surface to be bonded to a second body to be bonded (second surface to be bonded).
  • a bonding structure in which a bonding layer is formed and the first bonding surface and the second bonding surface are bonded by metal nanoparticles in the bonding layer, and one or both of the first bonded surface and the second bonded surface Is Al or an Al alloy, and the metal nanoparticles are Ni nanoparticles.
  • Ni nanoparticles as the metal nanoparticles, one or both of the first bonded surface and the second bonded surface can be used. Even if it is Al or an Al alloy, it is possible to join them.
  • metal nanoparticles are placed between a surface to be bonded of a first body to be bonded (first surface to be bonded) and a surface to be bonded to a second body to be bonded (second surface to be bonded).
  • the first bonding layer including the first bonding layer, the metal foil layer, and the second bonding layer including the metal nanoparticles are formed in this order, and even if there is a difference in the amount of thermal expansion between the first bonded body and the second bonded body, the bonding is performed.
  • the difference in the amount of thermal expansion can be absorbed by the deformation of the metal foil layer in the structure, the amount of shear deformation between the first bonding layer and the second bonding layer can be reduced, and a decrease in bonding strength can be prevented. Things.
  • Patent Literature 1 enables bonding with Al or an Al alloy by including Ni nanoparticles in a bonding layer.
  • Ni is hard, thermal stress due to a difference in thermal expansion as described above is reduced. It cannot be alleviated, and cracks and the like may occur.
  • one metal particle having a relatively small hardness and a micro particle size is interposed between a semiconductor element and a member to be joined, and is fixed to another nano-sized metal particle having a face-centered cubic crystal structure.
  • a semiconductor element bonding structure is a semiconductor element bonding structure in which metal particles of a first metal are fixedly bonded to a second metal, wherein the first metal has a hardness higher than that of the second metal. Low, the melting point is equal to or less than that of the second metal, and the particle size is micro-sized, and the metal particles of the first metal are bonded between a semiconductor element and a member to be bonded to the semiconductor element. A plurality of the metal particles of the first metal are fixedly joined to each other with the second metal.
  • the semiconductor element bonding structure in which the metal particles of the first metal are fixedly bonded to each other with the second metal, wherein the first metal is the second metal A metal element having a hardness lower than that of the metal, a melting point equal to or less than that of the second metal, and a micro-particle size, and joining the metal particles of the first metal to the semiconductor element and the semiconductor element;
  • the semiconductor element and the object are firmly joined to each other by the second metal because the metal particles of the first metal are fixedly joined to the second metal by the second metal.
  • the deformation of the metal particles of the first metal having a micro size absorbs a thermal stress caused by a difference in thermal expansion between the semiconductor element and the object to be bonded, thereby preventing cracks and the like from occurring. .
  • the presence of the micro-sized metal particles of the first metal in the joint structure can generate a discharge path for gas generated during sintering between the metal particles of the first metal, and gas voids are formed. This has the effect that inclusion can be prevented.
  • FIG. 2 is a diagram illustrating a semiconductor element junction structure according to the first embodiment.
  • FIG. 2 is an image diagram illustrating a configuration of a bonding layer in the bonding structure in FIG. 1.
  • FIG. 4 is a schematic view illustrating a formation method when the semiconductor element bonding structure according to the first embodiment is formed by sintering.
  • FIG. 4 is a diagram showing a sample structure created for an experiment in an example.
  • FIG. 3 is an overall cross-sectional view of a joint structure observed with an optical microscope in Examples. It is a SEM image of the junction cross section at the time of using the bonding material paste in the case where nano-sized Ni particles and micro-sized Al particles are mixed in an example. It is a figure showing the result of having observed the surface of the joined portion in an example.
  • FIG. 1 is a diagram illustrating a semiconductor element junction structure according to the first embodiment.
  • FIG. 2 is an image diagram illustrating a configuration of a bonding layer in the bonding structure in FIG. 1.
  • the semiconductor element bonding structure according to the present embodiment is obtained by bonding and fixing first metal particles having relatively low hardness and melting point and having a microscopic particle size with a second metal having a face-centered cubic crystal structure.
  • first metal having relatively low hardness and melting point include aluminum (Al), silver (Ag), zinc (Zn), and copper (Cu).
  • a plurality of metal particles are interposed between a semiconductor element and a member to be joined to the semiconductor element, and the first metal particles have a face-centered cubic crystal structure, and have a relatively high hardness and a high melting point. It is a structure that is fixedly bonded with the metal.
  • Al has a low hardness and a high stress relaxation effect. In addition, it is excellent in high-temperature stability even in an environment where oxygen exists, such as the atmosphere, such as a bonding interface between other metals. Therefore, in the present embodiment, a case will be described in which Al is mainly used as the first metal. Further, for example, since Ni has a relatively high hardness and melting point, a case where Ni is mainly used as the second metal will be described in the present embodiment.
  • FIG. 1 is a diagram showing a semiconductor element bonding structure according to the present embodiment
  • FIG. 2 is an image diagram showing a configuration of a bonding layer in the bonding structure of FIG.
  • the semiconductor element bonding structure 1 according to the present embodiment includes, for example, a substrate 2 such as a Cu lead frame whose surface is coated with Ni, and a semiconductor chip 3 of, for example, SiC having a bonding surface facing the substrate 2 as an Al electrode 3a. This is a structure in which the substrate 2 and the semiconductor chip 3 are joined with the joining layer 4 interposed therebetween.
  • the bonding layer 4 is made of a metal particle 5 of Al, which is a first metal having a micro-size (hereinafter, the micro-size range is larger than 0.5 ⁇ m and smaller than 1 mm, and preferably 500 ⁇ m or smaller). Is formed by firmly bonding with Ni, which is the metal. As shown in Patent Literature 1, Ni enables bonding with Al or an Al alloy, but because of its high hardness, thermal stress due to a difference in thermal expansion cannot be relaxed, and as described above, cracks may occur. Cause it. Therefore, as shown in FIG. 2, by mixing and interposing metal particles 5 having a hardness lower than that of Ni and a micro-sized particle, the metal particles 5 absorb thermal stress while being in contact with the Al electrode 3a.
  • Bonding can be performed firmly.
  • the bonding surface on the substrate 2 side is bonded to Ni, so that Ni can be firmly bonded to each other.
  • the outermost surface of the substrate 2 may be gold (Au), Ag, Al, or the like in addition to Ni.
  • the presence of the micro-sized metal particles 5 in the bonding layer 4 provides a discharge path for gas generated during sintering between the metal particles 5, thereby preventing gas voids from being included in the bonding layer 4.
  • the volume ratio is about 74% even when the metal particles 5 are densely packed. Therefore, an outflow path for Ni particles and gas is formed in a region between the metal particles 5 other than the volume occupied by the metal particles 5 (the remaining 26% region of 74%), and the outflow path is dispersed and voids are formed. Aggregation at one location and coarsening can be prevented.
  • the micro-sized metal particles 5 interposed in the bonding layer 3 only need to have a hardness lower than that of Ni.
  • Ni for example, as described above, Al, Ag, Zn, Cu, or the like can be used.
  • Al when Al is used, an excellent effect of stress relaxation can be obtained.
  • the melting point is at least 300 ° C., preferably at least 300 ° C. It is desirable to use metal particles 5 having a temperature of 350 ° C. or higher.
  • the powdery micro-sized metal particles 5 of the first metal and the nano-sized metal particles (hereinafter, the range of nano-sized is 5 nm or more and 500 nm or less) are used. Then, a mixture obtained by mixing powdery Ni particles containing Ni having a particle diameter of 1/10 or less of the particle diameter of the metal particles 5 is formed into a paste, and the paste bonding agent is applied to the substrate 2.
  • the semiconductor chip 3 may be placed thereon and sintered and bonded.
  • a plating solution is circulated in a state where the metal particles 5 are interposed between the substrate 2 and the semiconductor chip 3, Ni is deposited by plating, and the substrate 2 and the semiconductor chip 3 are fixedly bonded with the metal particles 5.
  • Ni is deposited by plating
  • the substrate 2 and the semiconductor chip 3 are fixedly bonded with the metal particles 5.
  • good bonding with Al particles can be ensured by deposition of electroless Ni.
  • a surface layer of Ni or the like can be formed in advance on the surface of the Al particles.
  • FIG. 3 is a schematic view showing a forming method when the semiconductor element bonding structure according to the present embodiment is formed by sintering.
  • Ni particles having a nano-sized particle and metal particles 5 having a micro-sized particle are used, and the metal particles 5 are hereinafter referred to as Al particles
  • Al particles are prepared by a liquid phase reduction method.
  • This is mixed with a solvent and a binder to form a paste-like joining material (see FIG. 3C).
  • a paste-like bonding material is applied onto the substrate 2, and a semiconductor chip 3 (here, a power semiconductor of SiC is used, hereinafter referred to as a SiC chip) is mounted thereon (see FIG. 3D).
  • the bonding conditions include, for example, a heating rate of 5 (3 to 50) ° C./min, a holding temperature of 350 (300 to 400) ° C., a holding time of 60 (10 to 120) minutes, and a pressure of 1 (0.5 to 5) MPa.
  • sintering That is, by heating at the above-mentioned temperature, the solvent evaporates (see FIG. 3 (E)), and the nano-sized Ni particles are sintered and bonded (see FIG. 3 (F)).
  • the semiconductor element junction structure 1 including the layer 4 is formed.
  • NiNi particles having a nano-size particle can bond particles at a temperature (for example, about 300 ° C.) extremely lower than the melting point (1455 ° C.) of Ni as a metal. Further, the metal as the sintered body after the bonding can maintain the original melting point of Ni, and thus can have sufficient heat resistance against heat generation of the SiC chip.
  • the particle size of the Ni particles may be nano-sized, but is preferably 500 nm or less, and more preferably 100 nm or less, because the sinterability at a low temperature is increased, which is more preferable.
  • the thickness is preferably 5 nm or more. It is to be noted that the Ni particles having these particle sizes do not need to satisfy all the sizes described above, and may be in a state including at least the Ni particles having the above size. Just fine.
  • the mixing ratio of the Al particles and the Ni particles excluding the solvent and the binder is such that the volume ratio of the Al particles is 20% or more and 90% or less, and preferably 50% or more.
  • the volume ratio of the Al particles is 20% or more and 90% or less, and preferably 50% or more.
  • the thickness of the bonding layer 4 is desirably about 3 to 800 ⁇ m. If the thickness is 3 ⁇ m or less, the effect of relaxing the stress cannot be sufficiently obtained, and if the thickness is 800 ⁇ m or more, the thermal conductivity greatly decreases, which is not preferable as the heat radiation characteristic. More preferably, it is about 10 ⁇ m to 150 ⁇ m.
  • nano-size Cu can also be used using the same principle.
  • Al, Ag, and Zn particles can be used as the metal particles 5 of the first metal having a lower hardness than the nano-sized Cu particle sintered body.
  • Nano-sized particles other than Ni and Cu preferably have a face-centered cubic crystal structure, such as Au or Ag. Since the degree of decrease in deformability of the sintered metal, especially at low temperature, is small, It is suitable for suppressing the generation and progress of cracks. The degree of oxidation of the micro-sized first metal particles 5 of Al or Ag is suppressed as compared with the case of nano-sized, and the concern of migration is reduced when Ag is of micro-sized.
  • FIG. 4 is a diagram showing a sample structure created for an experiment.
  • the bonding layer 4 in FIG. 1 was formed by sintering a bonding agent obtained by mixing micro-sized Al particles and nano-sized Ni particles in the semiconductor element bonding structure.
  • a paste composed of nano-sized Ni particles having a particle size of 100 nm or less, micro-sized Al particles having an average particle size of 10 ⁇ m, a solvent, and a binder prepared by a liquid phase reduction method was used.
  • the ratio between the Ni particles and the Al particles in the paste was 1: 1 by weight (0.24: 0.76 by volume).
  • a paste containing only nano-sized Ni particles was also used as a bonding material.
  • a TO-247 lead frame with Ni plating on the surface and a Si chip with a size of 2.7 mm x 2.7 mm, 5.0 mm x 5.0 mm, and 7.0 mm x 7.0 mm were used.
  • An Al electrode having a thickness of 1 ⁇ m is formed on the bonding surface of the chip by a vapor deposition method.
  • a paste is applied to the TO-247 lead frame side using a metal mask made of a stainless steel plate having a thickness of 0.1 mm, the chip is placed on the application portion, and the temperature is increased in the air at a rate of 5 ° C./min and a holding temperature.
  • FIG. 5 shows an overall cross-sectional view of the bonding structure observed with an optical microscope.
  • FIG. 5A shows a bonding material paste obtained by mixing nano-sized Ni particles with micro-sized Al particles.
  • 5B is a cross-sectional image near the center in FIG. 5A
  • FIG. 5C is a cross-sectional image near the right end in FIG. 5A.
  • FIG. 6 is an SEM image of a bonding cross section when a bonding material paste in the case of mixing micro-size Al particles with nano-size Ni particles is used.
  • the Al particles form a system of a body-centered cubic lattice or a hexagonal close-packed structure, thereby securing a passage when the solvent is vaporized in the joining process and suppressing the occurrence of large cracks and gas voids. It is considered that
  • FIG. 7 is a diagram showing the result of observing the surface of the joint.
  • FIG. 7A is a diagram showing the surface of a bonded portion after heating when micro-sized Al particles are not included
  • FIG. 7B is a diagram showing heating when micro-sized Al particles are mixed with nano-sized Ni particles. It is a figure which shows the surface of the junction part after.
  • FIG. 7A it was confirmed that large cracks and gas voids were entirely present in the bonding layer where no Al particles were included.
  • FIG. 7B it was confirmed that the bonding layer containing Al particles had a clean layer shape without large cracks and gas voids. That is, as described above, it was confirmed that the generation of large cracks and gas voids could be suppressed by securing the passage when the solvent was vaporized in the bonding process.
  • FIG. 8 is a comparison graph of the shear strength for each chip size.
  • the bonding strength of a 2.7 mm square chip was set to 1, and the shear stress was compared between a case where nano-sized Ni particles and a micro-sized Al particle were mixed for each chip size and a case where only nano-sized Ni particles were used.
  • a small size of 2.7 mm square deterioration due to thermal stress is not remarkable, so there is almost no difference in the presence or absence of micro-sized Al particles, but in the case of a mixed paste of a bonding material containing no micro-sized Al particles.
  • the larger the chip size the lower the bonding strength.
  • the bonding strength increases as the chip size increases.
  • the thermal expansion coefficient of the chip increases as the chip size increases. That is, when microparticles of Al particles are not included, the thermal stress cannot be released, and thus it is considered that the bonding strength decreases as the chip size increases. On the other hand, in the case of the mixed paste of Ni particles / Al particles, it is considered that high bonding strength was observed because the Al particles in the bonding layer acted as a thermal stress release portion.
  • FIG. 9 is a graph of a stress-strain curve in which the vertical axis represents the bonding strength and the horizontal axis represents the amount of tool displacement in the shear stress direction.
  • FIG. 9A shows a result obtained by using a bonding material containing micro-sized Al particles
  • FIG. 9B shows a result obtained by using a bonding material not containing micro-sized Al particles. Is shown. Note that FIG. 9 is based on the bonding strength result of a 5.0 mm ⁇ 5.0 mm chip.
  • the displacement of the joint where Al particles are mixed is larger and gentler than that of the joint where Al particles are not mixed. This is considered to be because the Al particles are elongated and plastically deformed when a shear stress is applied to the Al particles.
  • thermal stress analysis by the finite element method was performed for the effect of mixing micro-sized Al particles.
  • the SiC chip and the Cu substrate were bonded, the chip size was 7.0 mm ⁇ 7.0 mm, and the bonding surface was Ag.
  • the substrate size was 10.0 mx 10.0 mm.
  • the analysis was performed on the assumption that the volume ratio of Al particles in the bonding layer due to the mixture of nano-sized Ni particles and micro-sized Al particles was 74%.
  • the upper limit of the temperature cycle was 250 ° C., the lower limit was ⁇ 45 ° C., and the number of cycles was analyzed up to six times.
  • the temperature was changed in the order of the low temperature side and the high temperature side from the state where the thermal stress was released at 200 ° C.
  • the maximum generated stress is the chip end face of the bonding portion, but the stress in the bonding when micro-size Al particles are not included is larger than that when Ni particles / Al particles are included at any cycle number. Is falling.
  • the stress value of the joint when Ni particles / Al particles are mixed is reduced by about 1 / as compared to the stress value of the joint when micro-sized Al particles are not included. I understand.
  • the present invention can be applied to a combination of metal particles of Ni / Ag, Cu / Ag, and Cu / Al (nano-sized metal / micro-sized metal) other than the mixture of nano-sized Ni / micro-sized Al. It has become clear that the effect of can be obtained.
  • micro-sized Al was fixedly bonded to Ni by plating.
  • the Al particles were fixed so as to have a thickness of 500 ⁇ m.
  • permanent magnets were arranged on both sides of the SiC chip and the Cu substrate, and fixed using the magnetism of Ni.
  • a Ni plating solution was passed through the voids of the Al particles, and the particles were fixedly joined by electroplating. Observed from the cross section, the occupation ratio of Al in the cross section was about 70%, and the fixed portion by plating was 12%.
  • the semiconductor element bonding structure according to the present invention can bond the semiconductor element and the object to be bonded firmly and with high quality by using Ni, and at the same time, allows the semiconductor element and the object to be bonded by yield (plastic deformation) of the metal particles. It has been clarified that it is possible to absorb the thermal stress due to the difference in thermal expansion between them and prevent the occurrence of cracks and the like.

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Abstract

【課題】Ｎｉよりも硬度が低く、粒径がマイクロサイズの金属粒子とＮｉとを半導体素子と被接合体との間に介在させることで、半導体素子と被接合体とを強固に接合すると共に、熱膨張差による熱応力を緩和することができる半導体素子接合構造を提供する。 【解決手段】ニッケル（Ｎｉ）よりも硬度が低く、粒径がマイクロサイズの金属粒子５（例えば、アルミニウム（Ａｌ））を半導体チップ３と当該半導体チップ３に接合する基板２との間に複数介在させ、金属粒子５をニッケル（Ｎｉ）で固着接合するものである。また、必要に応じて、前記金属粒子５をアルミニウム（Ａｌ）又はアルミニウム合金（Ａｌ合金）とし、前記半導体チップ３の表面、及び／又は基板２の表面がアルミニウム（Ａｌ）又はアルミニウム合金（Ａｌ合金）とするものである。

Description

半導体素子接合構造、半導体素子接合構造の生成方法及び導電性接合剤
　本発明は、比較的硬度が低く、粒径がマイクロサイズの一の金属粒子を面心立方の結晶構造を持つ他の金属粒子で固着接着して形成される半導体素子の接合構造に関する。
　現在、Ｓｉを用いた半導体は、動作温度が１５０℃程度以下とされているが、化合物半導体であるＳｉＣやＧａＮなどは、さらなる高温動作が可能とされている。高温動作が可能となれば、高電流密度での動作が可能となるなど、特にパワーデバイスでの利点が大きい。電気自動車やハイブリッド自動車のインバータの冷却装置が簡素化されるなどが期待される。しかし、現行の半導体実装技術で広く使用されているはんだを用いた接合は、融点が２００数十℃であり、融点以上での使用は困難である。また、２００℃以下であっても、長期の使用では、熱応力等により接続不良を生じることが知られている。そこで新たな高耐熱実装技術が必要とされている。
　その実装技術としてＡｕ－Ｇｅ、Ｚｎ－Ａｌ合金などの比較的高融点の溶融接合材料、高融点と低融点金属の拡散による液相拡散接合、金属ナノ粒子の焼結接合などの接合技術の検討が進められており、その中の金属ナノ粒子による焼結接合は種々検討されてきた。この金属ナノ粒子による焼結接合は、金属をナノ粒子化することで比表面積を大きくし、表面が活性になることで比較的低温の温度で接合が可能である。また、接合後は金属本来の融点になるため、接合材料として高い耐熱性が期待できる。
　近年、金属ナノ粒子の低温焼結接合では、銀や銅等の金属ナノ粒子材料での研究開発が進められている。しかし、銀は高コストであり、酸化、マイグレーションの問題を生じる懸念があり、銅は自身の酸化が課題となっている。また、金属ナノ粒子の焼結体は、比表面積が大きいために表面に形成あるいは吸着している、酸素、炭素原子の焼結時の内部への取り込みのため、純金属よりも降伏応力の上昇と同時に脆化する傾向があり、熱応力に対して十分な応力緩和効果が見られなかった。
　そこで、発明者らは、特許文献１、２に示すように、融点が１４５３℃と銀や銅よりも高く、電気抵抗は６．９９×１０－８Ωｃｍと比較的低いＮｉ粒子に着目して検討をおこなってきた。なお、従来広く使用されてきたＳｎ－Ｐｂ共晶はんだ及び鉛フリーはんだ（Ｓｎ－Ａｇ－Ｃｕ）の電気抵抗はそれぞれ１５×１０－８Ωｃｍ、１１×１０－８Ωｃｍである。また、Ｎｉの熱膨張率は１３．３×１０－６であり、銅の１７×１０－６、銀の１９×１０－６よりも低く、ＳｉやＳｉＣの熱膨張率により近い。
　これまでにＮｉナノ粒子を用いた場合、４００℃以下での接合が可能であり、２５０℃以上における耐熱性を有する接合材料であることが分かっている。また、特許文献１に開示されているように、アルミニウム（以下、Ａｌという）との直接接合が可能であることも明らかとなっている。しかしながら、焼結後の接合層において大きなガスボイドやクラックが発生していることが分かった。これらのボイドは、ナノ粒子表面の有機物などの蒸発に起因するものであるが、金属ナノ粒子の焼結体のいずれにおいても問題となっていた。また、金属ナノ粒子による接合にはＳｉやＳｉＣなどの半導体素子と銅基板等との熱膨張係数（ＣＴＥ）の差により生じる応力を緩和することができず、接合強度を著しく低下させてしまう問題がある。これらの問題に関して、例えば、特許文献１、２に示す技術が開示されている。
　特許文献１に示す技術は、第１被接合体の被接合面（第１被接合面）と第２被接合体の被接合面（第２被接合面）との間に金属ナノ粒子を含む接合層が形成され、接合層中の金属ナノ粒子によって第１接合面と第２接合面とが接合されてなる接合構造であって、第１被接合面と第２被接合面の一方又は両方はＡｌ又はＡｌ合金であり、金属ナノ粒子はＮｉナノ粒子とするものであり、金属ナノ粒子としてＮｉナノ粒子を用いることにより、たとえ第１被接合面と第２被接合面の一方又は両方がＡｌ又はＡｌ合金であっても、両者の接合を可能とするものである。
　特許文献２に示す技術は、第１被接合体の被接合面（第１被接合面）と第２被接合体の被接合面（第２被接合面）との間に、金属ナノ粒子を含む第１接合層、金属箔層、金属ナノ粒子を含む第２接合層がこの順に形成されており、第１被接合体と第２被接合体の熱膨張量に差があっても、接合構造中の金属箔層が変形することによって熱膨張量の差を吸収することができ、第１接合層と第２接合層のせん断変形量を低減し、接合強度の低下を防止することができるものである。
特開２０１５－９３２９６号公報 特開２０１５－９３２９５号公報
　しかしながら、特許文献１に示す技術は、接合層中にＮｉナノ粒子を含むことで、ＡｌやＡｌ合金との接合を可能とするが、Ｎｉは硬いため上述したような熱膨張差による熱応力を緩和することができず、クラックなどが生じてしまう可能性がある。
　また、特許文献２に示す技術は、接合構造に金属箔層を設けることで、この金属箔層が変形し、チップと基板との熱膨張差による熱応力を緩和することが可能であるが、焼結接合されたナノＮｉとチップと間の熱膨張差を緩和することができず、十分な熱応力の緩和をおこなうことができない。また、金属箔層を設けることで多層構造を形成するための形成工程が増え、製造効率が悪くなってしまう。
　本発明は、比較的硬度が低く粒径がマイクロサイズの一の金属粒子を半導体素子と被接合体との間に介在させ、面心立方の結晶構造を持つナノサイズの他の金属粒子で固着接合することで、半導体素子と被接合体とを強固に接合すると共に、熱膨張差による熱応力を緩和することができる半導体素子接合構造を提供する。
　本発明に係る半導体素子接合構造は、第１の金属の金属粒子を第２の金属で固着接合した半導体素子接合構造であって、前記第１の金属は、前記第２の金属よりも硬度が低く、融点が当該第２の金属と同等以下であり、且つ、粒径がマイクロサイズであり、前記第１の金属の金属粒子を半導体素子と当該半導体素子に接合する被接合体との間に複数介在させ、前記第１の金属の金属粒子を前記第２の金属で固着接合するものである。
　このように、本発明に係る半導体素子接合構造においては、第１の金属の金属粒子を第２の金属で固着接合した半導体素子接合構造であって、前記第１の金属は、前記第２の金属よりも硬度が低く、融点が当該第２の金属と同等以下であり、且つ、粒径がマイクロサイズであり、前記第１の金属の金属粒子を半導体素子と当該半導体素子に接合する被接合体との間に複数介在させ、前記第１の金属の金属粒子を前記第２の金属で固着接合するため、第２の金属により半導体素子と被接合体とを強固に且つ高品質に接合することができると共に、マイクロサイズの第１の金属の金属粒子の変形により半導体素子と被接合体との熱膨張差による熱応力を吸収し、クラックなどの発生を防止することができるという効果を奏する。
　また、接合構造中にマイクロサイズの第１の金属の金属粒子が存在することで、第１の金属の金属粒子間に焼結中に発生するガスの排出パスを生じさせることができ、ガスボイドが内包されることを防止することができるという効果を奏する。
第１の実施形態に係る半導体素子接合構造を示す図である。 図１の接合構造における接合層の構成を示すイメージ図である。 第１の実施形態に係る半導体素子接合構造を焼結結合で形成する場合の形成方法を示す模式図である。 実施例において実験用に作成したサンプル構造を示す図である。 実施例において光学顕微鏡で観察した接合構造の全体断面図である。 実施例においてナノサイズのＮｉ粒子にマイクロサイズのＡｌ粒子を混合した場合の接合材料ペーストを利用したときの接合断面のＳＥＭ像である。 実施例において接合部分の表面を観察した結果を示す図である。 実施例においてチップサイズ別のシェア強度の絶対値の比較結果を示す図である。 実施例において縦軸を接合強度、横軸をせん断応力方向におけるツールの変位量とした応力－ひずみ曲線のグラフを示す図である。 実施例において有限要素法による熱応力解析をおこなった結果を示す図である。 従来においてナノサイズのＮｉ粒子による低温焼結接合した場合の接合構造の全体断面図である。
　以下、本発明の実施の形態を説明する。また、本実施形態の全体を通して同じ要素には同じ符号を付けている。
　　（本発明の第１の実施形態）
　本実施形態に係る半導体素子接合構造について、図１ないし図３を用いて説明する。本実施形態に係る半導体素子接合構造は、硬度、融点が比較的低く、粒径がマイクロサイズの第１の金属粒子を面心立方の結晶構造を持つ第２の金属で接着固着したものである。比較的硬度、融点が低い第１の金属として、例えば、アルミニウム（Ａｌ）、銀（Ａｇ）、亜鉛（Ｚｎ）、銅（Ｃｕ）があり、粒径をマイクロサイズとするこれらの第１の金属の金属粒子を半導体素子と当該半導体素子に接合する被接合体との間に複数介在させ、第１の金属の金属粒子を面心立方の結晶構造を持つ、比較的硬度、融点が高い第２の金属で固着接合した構造である。
　上記金属の内、例えばＡｌは硬度が低く応力緩和の効果が高い。また、他の金属との間の接合界面のような大気等の酸素が存在する環境下でも、高温安定性にすぐれている。そのため、本実施形態において、第１の金属として主にＡｌを用いた場合について説明する。さらに、例えばＮｉは硬度及び融点が比較的高いことから、本実施形態においては、第２の金属として主にＮｉを用いた場合について説明する。
　図１は、本実施形態に係る半導体素子接合構造を示す図、図２は、図１の接合構造における接合層の構成を示すイメージ図である。本実施形態に係る半導体素子接合構造１は、例えば表面をＮｉでコーティングしたＣｕリードフレームなどの基板２と、当該基板２と対向する接合面をＡｌ電極３ａとする例えばＳｉＣの半導体チップ３との間に接合層４を介することで、基板２と半導体チップ３とを接合する構造である。
　接合層４は、粒径がマイクロサイズ（以下、マイクロサイズの範囲を０．５μｍより大きく、１ｍｍ未満とし、好ましくは５００μｍ以下とする）の第１の金属であるＡｌの金属粒子５を第２の金属であるＮｉで固着接合して形成されている。特許文献１において示されるように、ＮｉはＡｌやＡｌ合金との接合を可能とするが、硬度が高いため、熱膨張差による熱応力を緩和することができず、上述したようにクラック発生の原因となってしまう。そのため、図２に示すように、Ｎｉよりも硬度が低く、粒径がマイクロサイズの金属粒子５を混合して介在させることで、金属粒子５が熱応力を吸収しつつ、Ａｌ電極３ａとの接合を強固に行うことが可能となる。また、基板２側の接合面は、ＮｉでコーティングしたＣｕリードフレームの場合、Ｎｉとの接合になるため、Ｎｉ同士で強固に接合することが可能となる。なお、基板２の最表面はＮｉ以外に、金（Ａｕ）、Ａｇ、Ａｌ等でもよい。
　また、接合層４中にマイクロサイズの金属粒子５が存在することで、金属粒子５間に焼結中に発生するガスの排出パスができ、ガスボイドが接合層４に内包されることを防ぐことができる。ここで、マイクロサイズの金属粒子５が全て同一径である場合には、最密に充填された場合でも容積率は７４％程度となる。したがって、金属粒子５が占める容積以外の金属粒子５間の領域（７４％の残りの２６％領域）でＮｉ粒子とガスの流出パスが形成されることになり、流出パスが分散されてボイドを一か所に凝集して粗大化することを防止することができる。金属粒子５にサイズ分布がある場合には、最大の容積率は７４％以上になるが、それでも十分に一定のガス流出パスを確保することができる。すなわち、金属粒子５が最密に充填されていない場合であっても、応力緩和効果を得られると共に、ガス流出パスを確保し、ボイド成長抑制効果にも寄与することが可能となる。
　なお、接合層３に介在させるマイクロサイズの金属粒子５は、Ｎｉよりも硬度が低いものであればよく、例えば、上述したように、Ａｌ、Ａｇ、Ｚｎ、Ｃｕ等を用いることができるが、特にＡｌを用いた場合は、優れた応力緩和の効果を得ることができる。また、Ｎｉ粒子（後述するように、ここではナノサイズのＮｉ粒子を用いる）の焼結温度、及び半導体チップ３の発熱による耐熱性を考慮した場合には、融点が少なくとも３００℃以上、好ましくは３５０℃以上の金属粒子５を用いることが望ましい。
　接合層４の形成方法については、例えば、粉末状のマイクロサイズの第１の金属の金属粒子５と、粒径がナノサイズ（以下、ナノサイズの範囲を５ｎｍ以上、５００ｎｍ以下とする）であって、金属粒子５の粒径の１／１０以下の粒径のＮｉを含む粉末状のＮｉ粒子とを混合した混合体をペースト状にし、当該ペースト状の接合剤を基板２に塗布し、その上に半導体チップ３を載せて焼結接合するようにしてもよい。または、基板２と半導体チップ３との間に金属粒子５を介在させた状態でめっき液を流通し、めっきによりＮｉを析出させて基板２と半導体チップ３との間を金属粒子５で固着接合するようにしてもよい。例えば、無電解Ｎｉの析出により、Ａｌ粒子との良好な接合性が確保できる。いずれの場合にも、例えばＡｌ粒子の表面にＮｉなどの表層を事前に形成しておくことができる。
　以下、焼結接合による接合層４の形成方法について説明する。図３は、本実施形態に係る半導体素子接合構造を焼結結合で形成する場合の形成方法を示す模式図である。まず、液相還元法により粒径がナノサイズのＮｉ粒子と粒径がマイクロサイズの金属粒子５（ここでは、Ａｌ粒子を用いるものとし、以下金属粒子５をＡｌ粒子とする）とを用意する（図３（Ａ）及び（Ｂ）を参照）。これを溶媒及びバインダーと混合してペースト状の接合材料を作成する（図３（Ｃ）を参照）。
　基板２上にペースト状の接合材料を塗布し、その上に半導体チップ３（ここでは、ＳｉＣのパワー半導体を用いるものとし、以下ＳｉＣチップとする）を載せる（図３（Ｄ）を参照（図３（Ｄ）において基板２及びＳｉＣチップは図示しない））。接合条件として、例えば、昇温速度５（３～５０）℃／ｍｉｎ、保持温度３５０（３００～４００）℃、保持時間６０（１０～１２０）分、加圧１（０．５～５）ＭＰａで焼結接合する。すなわち、上記のような温度で加熱することで、溶媒が蒸発し（図３（Ｅ）を参照）、ナノサイズのＮｉ粒子が焼結結合することで（図３（Ｆ）を参照）、接合層４を含む半導体素子接合構造１が形成される。
　粒径がナノサイズのＮｉ粒子は、金属としてのＮｉの融点（１４５５℃）よりも極めて低い温度（例えば、３００℃程度）で粒子間を結合させることが可能である。また、結合した後の焼結体としての金属は、本来のＮｉの融点を維持することができるため、ＳｉＣチップの発熱に対して、十分な耐熱性を有することが可能となる。
　このとき、Ｎｉ粒子の粒径はナノサイズであればよいが、５００ｎｍ以下であることが好ましく、１００ｎｍ以下とすることで、低温での焼結性が増すためさらに好ましい。一方、粒径が小さすぎると表面の酸化物、有機成分の割合が大きくなり、接合性が低下する。したがって、５ｎｍ以上であることが好ましい。なお、これらの粒径のＮｉ粒子は、全
ての粒子が上記サイズを満たす必要はなく、少なくとも上記サイズのＮｉ粒子を含む状態であればよく、好ましくは平均粒径が上記サイズを満たすようにすればよい。
　また、上記接合材料において、溶媒及びバインダーを除いたＡｌ粒子とＮｉ粒子との混合比率は、Ａｌ粒子の容積率が２０％以上、９０％以下とし、好ましくは５０％以上とする。そうすることで、Ａｌ粒子で格子形成がなされ、Ｎｉ粒子の焼結時に生じるボイドの粗大化を抑制することが可能となる。２０％以下では、応力緩和の効果が十分ではなく、９０％以上では、固着接合する金属部分が少なく、接合力が低下する。
　なお、図１の半導体素子接合構造１において、接合層４の厚みは３～８００μｍ程度とすることが望ましい。３μｍ以下では、応力緩和の効果が十分に得られず、また８００μｍ以上では、熱伝導率の低下が大きくなるため、放熱特性として好ましくない。より好ましくは、１０μｍ～１５０μｍ程度である。
　また、本実施形態においては、第２の金属としてＮｉを使用して説明したが、同様の原理を用いてナノサイズのＣｕを用いることもできる。この場合、ナノサイズのＣｕ粒子焼結体よりも硬度の低い第１の金属の金属粒子５として、例えばＡｌ、Ａｇ、Ｚｎ粒子を用いることができる。これらの第１の金属の金属粒子５とナノサイズの第２の金属としてのＣｕ粒子とを混合することによって、応力緩和、及びガス流出パスの確保を行うことができる。Ｎｉ，Ｃｕ以外のナノサイズの粒子は、Ａｕ、Ａｇなど面心立方の結晶構造をもつものが好ましく、焼結後の金属の特に低温での変形能の低下の程度が少ないので、低温側でのクラックの発生、進展を抑制するために適している。
ＡｌやＡｇのマイクロサイズの第１の金属の金属粒子５は、ナノサイズの場合と比較して酸化の程度が抑制され、またＡｇはマイクロサイズの場合に、マイグレーションの懸念も軽減される。
　本発明に係る半導体素子接合構造について、以下の実験を行った。図４は、実験用に作成したサンプル構造を示す図である。なお、本実施例においては、半導体素子接合構造をマイクロサイズのＡｌ粒子とナノサイズのＮｉ粒子とを混合した接合剤を焼結することで図１における接合層４を形成した。
　接合には液相還元法により作製した粒径サイズ１００ｎｍ以下のナノサイズのＮｉ粒子と平均粒径１０μｍのマイクロサイズのＡｌ粒子、溶媒及びバインダーから成るペーストを接合材料として用いた。ペースト中のＮｉ粒子とＡｌ粒子との割合は重量割合で１：１（体積割合で０．２４：０．７６）とした。なお、比較材料としてナノサイズのＮｉ粒子のみのペーストも接合材料として用いた。
　接合評価には表面にＮｉめっきが施されたＴＯ－２４７リードフレームと、サイズがそれぞれ２．７ｍｍ×２．７ｍｍ，５．０ｍｍ×５．０ｍｍ，７．０ｍｍ×７．０ｍｍのＳｉチップとを用いた。チップの接合表面には厚み1μｍのＡｌ電極が蒸着法により形成されている。厚み０．１ｍｍのステンレス板で作製したメタルマスクを用いてＴＯ－２４７リードフレーム側にペーストを塗布し、チップを塗布部上にのせて、大気中にて昇温速度５℃／ｍｉｎ、保持温度３５０℃、保持時間６０分、加圧３ＭＰａの接合条件で接合を行った。Ａｌ粒子の体積率は約７６Ｖｏｌ％であることから、接合層中で充填率が７４％の最密構造に近い構造を形成していると考えられる。
　接合強度の測定については、せん断強度による評価を行った。測定にはボンドテスター(ノードソン・アドバンテージ・テクノロジー製　万能型ボンドテスター４０００Ｐｌｕｓ)を用い、常温で測定を行った。ツールの試験サンプルからの高さは１００μｍ、ツールの移動速度は１００μｍ／ｓｅｃに設定した。接合強度試験後のサンプルは、走査型電子顕微鏡(ＳＥＭ，　Ｈｉｔａｃｈｉ　Ｈｉｇｈ－Ｔｅｃｈｎｏｌｏｇｉｅｓ：ＳＵ３５００)を用いて破断面の観察を行った。
　以下、実験結果を説明する。接合後の断面及び表面を観察した。図５は、光学顕微鏡で観察した接合構造の全体断面図を示しており、図５（Ａ）はナノサイズのＮｉ粒子にマイクロサイズのＡｌ粒子を混合した場合の接合材料ペーストを利用したときの断面図、図５（Ｂ）は図５（Ａ）における中心付近の断面画像、図５（Ｃ）は図５（Ａ）における右端付近の断面画像である。また、図６は、ナノサイズのＮｉ粒子にマイクロサイズのＡｌ粒子を混合した場合の接合材料ペーストを利用したときの接合断面のＳＥＭ像である。
　図１１に示したマイクロサイズのＡｌ粒子を含まない場合の接合構造と比較した場合に、図１１の断面画においては大きなクラックやガスボイドがみられていたが、図５のナノサイズのＮｉ粒子とマイクロサイズのＡｌ粒子とを混合したペーストを用いた接合の断面像からは大きなクラックやガスボイドはみられなかった。また、図６のＳＥＭ断面像から焼結したＮｉ粒子層中にＡｌ粒子がおおよそ均一に分散して存在している様子が確認できた。これは、上述したように、Ａｌ粒子が体心立方格子か六方最密構造の体系を形成することで接合過程における溶剤が気化した際の通り道を確保し、大きなクラックやガスボイドの発生を抑制できたと考えられる。
　また、図７は、接合部分の表面を観察した結果を示す図である。図７（Ａ）はマイクロサイズのＡｌ粒子を含まない場合の加熱後における接合部分の表面を示す図、図７（Ｂ）はナノサイズのＮｉ粒子にマイクロサイズのＡｌ粒子を混合した場合の加熱後における接合部分の表面を示す図である。図７（Ａ）において、Ａｌ粒子を含まない場合の接合層では大きなクラックやガスボイドが全体的に存在していることが確認できた。図７（Ｂ）においては、Ａｌ粒子を含む場合の接合層では大きなクラックやガスボイドがないきれいな層状であることが確認できた。すなわち、上述したように、接合過程における溶剤が気化した際の通り道が確保されることで、大きなクラックやガスボイドの発生を抑制できたことが確認された。
　次に、接合強度の測定結果について説明する。図８は、チップサイズ別のシェア強度の比較グラフである。２．７ｍｍ角のチップの接合強度を１とし、チップサイズ別にナノサイズのＮｉ粒子とマイクロサイズのＡｌ粒子とを混合した場合と、ナノサイズのＮｉ粒子のみの場合とでせん断応力を比較した。２．７ｍｍ角の小さいサイズのものでは、熱応力による劣化が顕著でないため、マイクロサイズのＡｌ粒子の有無の差がほとんどないが、マイクロサイズのＡｌ粒子を含まない場合の接合材料の混合ペーストでは、チップサイズが大きくなるほど接合強度が低下している。一方、ナノサイズのＮｉ粒子／マイクロサイズのＡｌ粒子の接合材料の混合ペーストでは、チップサイズが大きくなると共に接合強度も増加している。
　チップサイズが増大するに連れてチップの熱膨張率は増加する。すなわち、マイクロサイズのＡｌ粒子を含んでいない場合は、熱応力を解放することができないため、チップのサイズが大きくなるに連れて接合強度が低下したと考えられる。一方、Ｎｉ粒子／Ａｌ粒子の混合ペーストの場合は、接合層の中のＡｌ粒子が熱応力の解放部として作用することで高い接合強度が観察されたと考えられる。
　図９は、縦軸を接合強度、横軸をせん断応力方向におけるツールの変位量とした応力－ひずみ曲線のグラフである。図９（Ａ）は、マイクロサイズのＡｌ粒子を含んでいる場合の接合材料を用いた結果、図９（Ｂ）は、マイクロサイズのＡｌ粒子を含んでいない場合の接合材料を用いた結果を示している。なお、図９では、５．０ｍｍ×５．０ｍｍのチップの接合強度結果を元にした。
　図９に示されるように、Ａｌ粒子が混合されている接合の変位量が、Ａｌ粒子が混合されていない場合の接合に比べて大きく且つ緩やかな曲線を描いている。これは、Ａｌ粒子にせん断応力が加わった際にＡｌ粒子が延びて塑性変形しているとためと考えられる。
　次に、マイクロサイズのＡｌ粒子を混合した場合の効果について、有限要素法による熱応力解析をおこなった。検討したモデルは、ＳｉＣチップとＣｕ基板とが接合されており、チップサイズは７．０ｍｍ×７．０ｍｍ、接合表面はＡｇとした。基板サイズは１０．０ｍ×１０．０ｍｍとした。また、ナノサイズのＮｉ粒子とマイクロサイズのＡｌ粒子との混合による接合層中のＡｌ粒子の体積率は７４％として解析を行った。
　温度サイクルの上限は２５０℃、下限は－４５℃とし、サイクル数は６回までの解析を行った。熱サイクル開始は２００℃で熱応力が解放された状態から、低温側、高温側の順に温度を変化させた。最大発生応力は、接合部のチップ端面となるが、マイクロサイズのＡｌ粒子を含まない場合の接合における応力は、いずれのサイクル数でもＮｉ粒子／Ａｌ粒子を含む場合に比較して、最大応力は下がっている。図１０に示すように、マイクロサイズのＡｌ粒子を含まない場合の接合の応力値と比べて、Ｎｉ粒子／Ａｌ粒子を混合した場合の接合の応力値が約１／２程低下していることがわかる。
　さらに、上記と同様の条件の下、複数の金属混合の組み合わせで以下の表１に示す評価を行った。ナノサイズの金属粒子の焼結（結合体）は、粒子が結合してバルク金属と同等の硬度となることで結合体と考える。ただし、実際のナノサイズの金属粒子の焼結では、酸素、炭素などが混入する場合が多く、硬度はより高くなる場合があるが、その場合は本発明の効果がより顕著となる。なお熱サイクルの最高温度は２００℃とした。表１において、接合用のナノサイズの金属粒子１００％に対して、マイクロサイズの金属粒子を混合した場合に２０％以上最大応力が低減されたものを丸で示した。
Figure JPOXMLDOC01-appb-T000001
　表１より、ナノサイズのＮｉ／マイクロサイズのＡｌの混合以外にも、Ｎｉ／Ａｇ、Ｃｕ／Ａｇ、Ｃｕ／Ａｌ（ナノサイズの金属／マイクロサイズの金属）の金属粒子の組み合わせでも、本発明の効果を得ることができることが明らかとなった。
　次に、めっきによりマイクロサイズのＡｌをＮｉで固着接合する実験を行った。平均粒径が１５０μｍのＡｌ粒子の表面に０．３μｍのＮｉを無電解Ｎｉめっきにより被覆した粒子を準備し、電極表面がＮｉである５ｍｍ角ＳｉＣチップとＮｉメッキされたＣｕ基板との間に、５００μｍの厚みになるように前記Ａｌ粒子を挟持して固定した。このとき、ＳｉＣチップとＣｕ基板との両側に永久磁石を配置し、Ｎｉの磁性を利用して固定した。Ａｌ粒子の空隙にＮｉめっき液を流通させ、粒子間を電気めっきにより固着接合した。断面から観察し、Ａｌの断面占有率は約７０％、めっきによる固着部分は１２％であった。
　すなわち、めっき金属によりマイクロサイズの金属粒子を強固に固着接合することが可能となり、また、マイクロサイズの金属粒子の降伏（塑性変形）により熱応力を吸収することが可能となる。
　以上の実験結果から、ナノサイズのＮｉ粒子にマイクロサイズのＡｌ粒子を混合することで、マイクロサイズのＡｌ粒子を含まない接合構造において発生していた大きなクラックやガスボイドの発生を抑制できることが明確となった。また、Ｎｉ／Ａｌ粒子の混合ペーストを用いた接合は、Ａｌ粒子を含まない場合の接合に比べて接合強度の低下がみられなかったことから、Ｎｉ粒子の焼結後においてＡｌ粒子と良好な接合ができていることが明確となった。さらに、上記実験結果からＮｉ粒子層に分散して存在するＡｌ粒子の塑性変形の傾向がみられ、シェアテスト後の破断面観察からもＡｌ粒子が延びて塑性変形している様子が確認できた。したがって、本発明に係る半導体素子接合構造は、Ｎｉにより半導体素子と被接合体とを強固に且つ高品質に接合することができると共に、金属粒子の降伏（塑性変形）により半導体素子と被接合体との熱膨張差による熱応力を吸収し、クラックなどの発生を防止することが可能であることが明確となった。
　また、ナノサイズのＮｉ／マイクロサイズのＡｌの混合以外にも、面心立方の結晶構造を持つナノサイズの金属粒子に、当該金属粒子よりも硬度が低く、融点が同等以下のマイクロサイズの金属粒子を混合して接合構造を形成することで、本発明の効果を有する半導体素子接合構造を実現することが可能であることが明確となった。
　　１　半導体素子接合構造
　　２　基板
　　３　半導体チップ
　　３ａ　Ａｌ電極
　　４　接合層
　　５　金属粒子

Claims (8)

  1. 　第１の金属の金属粒子を第２の金属で固着接合した半導体素子接合層を有する半導体素子接合構造であって、
    　前記第１の金属は、前記第２の金属よりも硬度が低く、融点が当該第２の金属と同等以下であり、且つ、粒径がマイクロサイズであり、前記第１の金属の金属粒子は半導体素子と当該半導体素子に接合する被接合体との間に複数介在しており、前記第１の金属の金属粒子は前記第２の金属で固着接合されていることを特徴とする半導体素子接合構造。
  2. 　請求項１に記載の半導体素子接合構造において、
    　前記第１の金属の金属粒子の粒径が０．５μｍより大きく、５００μｍ以下である半導体素子接合構造。
  3. 　請求項１又は２に記載の半導体素子接合構造において、
    　前記第２の金属がニッケル（Ｎｉ）又は銅（Ｃｕ）である半導体素子接合構造。
  4. 　請求項１ないし３のいずれかに記載の半導体素子接合構造において、
    　当該半導体素子接合層の厚みが３μｍ以上、８００μｍ以下の範囲である半導体素子接合構造。
  5. 　請求項１ないし４のいずれかに記載の半導体素子接合構造において、
    　前記第１の金属がアルミニウム（Ａｌ）又はアルミニウム合金（Ａｌ合金）である半導体素子接合構造。
  6. 　請求項１ないし５のいずれかに記載の半導体素子接合構造の生成方法であって、
    　前記第１の金属の金属粒子を前記半導体素子と前記被接合体との間に複数介在させ、前記第１の金属の金属粒子間に生じる隙間にめっき液を流通し、めっき処理により前記第２の金属を析出させて前記第１の金属の金属粒子を固着接合する半導体素子接合構造の生成方法。
  7. 　請求項１ないし５のいずれかに記載の半導体素子接合構造の生成方法であって、
    　粒径が５ｎｍ以上、５００ｎｍ以下で、且つ、前記第１の金属の金属粒子の粒径の１／１０以下である前記第２の金属を含む前記第２の金属の金属粒子と前記第１の金属の金属粒子との混合体を２００℃以上で加熱し、前記第２の金属の金属粒子の焼結体で前記第１の金属の金属粒子を固着接合する半導体素子接合構造の生成方法。
  8. 　ナノサイズのニッケル（Ｎｉ）を含むニッケル（Ｎｉ）粒子と、前記ニッケル（Ｎｉ）よりも硬度が低く、粒径がマイクロサイズの金属粒子との混合体からなり、前記金属粒子の容積率が２０％以上、９０％以下であることを特徴とする導電性接合剤。
     
     
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