WO2020044168A1 - 半導体装置及び半導体装置の動作方法 - Google Patents

半導体装置及び半導体装置の動作方法 Download PDF

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Publication number
WO2020044168A1
WO2020044168A1 PCT/IB2019/057027 IB2019057027W WO2020044168A1 WO 2020044168 A1 WO2020044168 A1 WO 2020044168A1 IB 2019057027 W IB2019057027 W IB 2019057027W WO 2020044168 A1 WO2020044168 A1 WO 2020044168A1
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Prior art keywords
terminal
transistor
circuit
voltage
electrically connected
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Ceased
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PCT/IB2019/057027
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English (en)
French (fr)
Japanese (ja)
Inventor
岡本佑樹
石津貴彦
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to US17/269,330 priority Critical patent/US12431719B2/en
Priority to JP2020539156A priority patent/JP7330986B2/ja
Publication of WO2020044168A1 publication Critical patent/WO2020044168A1/ja
Anticipated expiration legal-status Critical
Priority to US19/195,776 priority patent/US20250260240A1/en
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—ELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries
    • H02J7/50—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries acting upon multiple batteries simultaneously or sequentially
    • H02J7/52—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries acting upon multiple batteries simultaneously or sequentially for charge balancing, e.g. equalisation of charge between batteries
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—ELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries
    • H02J7/50—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries acting upon multiple batteries simultaneously or sequentially
    • H02J7/52—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries acting upon multiple batteries simultaneously or sequentially for charge balancing, e.g. equalisation of charge between batteries
    • H02J7/54—Passive balancing, e.g. using resistors or parallel MOSFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
    • H01M10/425—Structural combination with electronic components, e.g. electronic circuits integrated to the outside of the casing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
    • H01M10/44—Methods for charging or discharging
    • H01M10/441—Methods for charging or discharging for several batteries or cells simultaneously or sequentially
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
    • H01M10/48—Accumulators combined with arrangements for measuring, testing or indicating the condition of cells, e.g. the level or density of the electrolyte
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H10D88/01—Manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
    • H01M10/425—Structural combination with electronic components, e.g. electronic circuits integrated to the outside of the casing
    • H01M2010/4271—Battery management systems including electronic circuits, e.g. control of current or voltage to keep battery in healthy state, cell balancing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

Definitions

  • One embodiment of the present invention relates to a semiconductor device and an operation method of the semiconductor device.
  • One embodiment of the present invention relates to a battery control circuit, a battery protection circuit, a power storage device, and an electronic device.
  • one embodiment of the present invention is not limited to the above technical field.
  • the technical field of the invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method.
  • one embodiment of the present invention relates to a process, a machine, a manufacturer, or a composition (composition of matter). Therefore, more specifically, as a technical field of one embodiment of the present invention disclosed in this specification, a display device, a light-emitting device, a power storage device, an imaging device, a storage device, a driving method thereof, or a manufacturing method thereof, Can be cited as an example.
  • Power storage devices also referred to as batteries and secondary batteries
  • batteries and secondary batteries are being used in a wide range of fields from small electronic devices to automobiles.
  • applications using a battery stack having a multi-cell configuration in which a plurality of battery cells are connected in series have been increasing.
  • the power storage device includes a circuit for grasping an abnormality at the time of charging and discharging such as overdischarge, overcharge, overcurrent, or short circuit.
  • a circuit for grasping an abnormality at the time of charging and discharging such as overdischarge, overcharge, overcurrent, or short circuit.
  • data such as voltage and current are acquired in order to detect an abnormality at the time of charging and discharging.
  • control such as charging / discharging stop and cell balancing is performed based on observed data.
  • Patent Document 1 discloses a protection IC that functions as a battery protection circuit.
  • the protection IC described in Patent Literature 1 has a configuration in which a plurality of comparators (comparators) are provided inside, and a reference voltage and a voltage of a terminal to which a battery is connected are compared to detect an abnormality during charging and discharging. Is shown.
  • Patent Document 2 discloses a battery state detection device for detecting a micro short circuit of a secondary battery and a battery pack incorporating the same.
  • Patent Document 3 discloses a protection semiconductor device for protecting an assembled battery in which cells of a secondary battery are connected in series.
  • One embodiment of the present invention is a semiconductor device having n sets of cell balance circuits (n is an integer of 1 or more).
  • One secondary battery is electrically connected to one cell balance circuit.
  • the cell balance circuit has a comparison circuit, and a storage element is electrically connected to an inverting input terminal of the comparison circuit.
  • the storage element includes a first transistor and a capacitor. The potential is maintained. The held potential changes with a change in the potential of the negative electrode of the secondary battery.
  • the comparison circuit has a function of comparing the held potential with the potential of the positive electrode of the secondary battery.
  • the output of the comparison circuit controls the gate voltage of the second transistor electrically connected in parallel to the secondary battery.
  • the first transistor includes a metal oxide containing indium in a channel formation region.
  • One embodiment of the present invention is a semiconductor device including n sets of cell balance circuits (n is an integer of 1 or more).
  • One secondary battery is electrically connected to one cell balance circuit.
  • the cell balance circuit has a comparator, and a storage element is electrically connected to an inverting input terminal of the comparator.
  • the storage element includes a first transistor and a capacitor. The potential is maintained. The held potential changes with a change in the potential of the negative electrode of the secondary battery.
  • the comparator has a function of comparing the held potential with the potential of the positive electrode of the secondary battery.
  • the gate voltage of the second transistor electrically connected in parallel to the secondary battery is controlled by the output of the comparator.
  • the first transistor includes a metal oxide containing indium in a channel formation region.
  • One embodiment of the present invention is a semiconductor device having n sets of cell balance circuits (n is an integer of 1 or more), and the n sets of cell balance circuits are electrically connected to n secondary batteries.
  • One rechargeable battery is electrically connected to one of the n sets of cell balance circuits, and each of the n sets of cell balance circuits includes a first comparison circuit and a non-inversion of the first comparison circuit.
  • the first terminal of the cell balance circuit is electrically connected to the second terminal of the (k-2) th cell balance circuit, and is electrically connected to the kth cell balance circuit.
  • the voltage difference between the first terminal and the second terminal of the m-th cell balance circuit (m is an integer of 2 to n) is equal to the (m-1) -th cell balance circuit. If the voltage difference between the first terminal and the second terminal is higher than the voltage difference between the first terminal and the second terminal, the high potential signal is output from the output terminal of the comparison circuit included in the m-th cell balance circuit, and the (m-1) th cell balance is output. It is preferable to have a function of outputting a low potential signal from an output terminal of a comparison circuit included in the circuit.
  • each of the n sets of cell balance circuits has a function of giving the sum of the voltage of the second terminal and the voltage A to the inverting input terminal of the comparison circuit, and the voltage A is 3 V or more and 5 V or less. Preferably, there is.
  • one embodiment of the present invention is a semiconductor including a first comparison circuit, a first transistor, a first capacitor, a first terminal, a second terminal, and a third terminal.
  • An operation method of the device wherein a first terminal is electrically connected to a non-inverting input terminal of a first comparing circuit, and a source and a first transistor of the first transistor are connected to an inverting input terminal of the first comparing circuit.
  • One of the drain and one electrode of the first capacitor are electrically connected, the other electrode of the first capacitor is electrically connected to the second terminal, and the first transistor
  • the third terminal is electrically connected to the other of the source and the drain of the first transistor
  • the first transistor includes a metal oxide in a channel formation region, the metal oxide includes indium
  • a positive terminal of the secondary battery is electrically connected to the terminal, and a second terminal is connected to the second terminal.
  • the first signal is the sum of the voltage of the second terminal and the voltage A, and the voltage A is 3 V or more and 5 V or less. .
  • the semiconductor device includes a second transistor, and the first terminal or the second terminal is electrically connected to one of a source and a drain of the second transistor, and is connected to a gate of the second transistor.
  • the output terminal of the first comparison circuit is electrically connected.
  • the second signal given to the non-inverting input terminal of the first comparison circuit in the third step has a function of being held in the fourth to sixth steps.
  • the semiconductor device includes a voltage generation circuit
  • the voltage generation circuit includes a third transistor and a second capacitor
  • one of a source and a drain of the third transistor includes a second transistor.
  • One electrode of the capacitive element is electrically connected
  • the second terminal is electrically connected to the other of the source and the drain of the third transistor
  • the voltage generation circuit generates the first signal
  • the third transistor have a function and include a metal oxide containing indium in a channel formation region.
  • the voltage generation circuit includes a second comparison circuit, and one of a source and a drain of the third transistor is electrically connected to a non-inverting input terminal of the second comparison circuit. It is preferable that the third terminal be electrically output to the inverting input terminal of the third comparison circuit, and the gate of the first transistor be electrically connected to the output terminal of the third comparison circuit.
  • one embodiment of the present invention includes a first comparison circuit, a second comparison circuit, a third comparison circuit, a control circuit, and a secondary battery;
  • the second comparison circuit and the third comparison circuit have a function of giving a signal to the control circuit, and the control circuit has a function of controlling the charging current of the secondary battery according to the signal given from the first comparison circuit.
  • the control circuit has a function of stopping charging of the secondary battery according to a signal given from the second comparison circuit, and the control circuit has a function to stop charging the secondary battery according to a signal given from the third comparison circuit.
  • the first comparison circuit has a function of comparing the potential of the positive electrode of the secondary battery with a first reference potential, and has a function of controlling a charging upper limit voltage of the secondary battery.
  • the comparison circuit has a function of comparing the potential of the positive electrode of the secondary battery with a second reference potential, and the third comparison circuit has And boundary temperature, a semiconductor device having a function of comparing the third reference potential.
  • the source or the drain of the first transistor is electrically connected to the non-inverting input terminal or the inverting input terminal of the first comparing circuit, and the non-inverting input terminal or the inverting input of the second comparing circuit is used.
  • the source or drain of the second transistor is electrically connected to the terminal
  • the source or drain of the third transistor is electrically connected to the non-inverting input terminal or the inverting input terminal of the third comparison circuit.
  • Each of the channel formation regions of the first transistor, the second transistor, and the third transistor preferably includes a metal oxide containing indium.
  • One embodiment of the present invention can provide a novel battery control circuit, a battery protection circuit, a power storage device, an electronic device, and the like.
  • one embodiment of the present invention can provide a battery control circuit, a battery protection circuit, a power storage device, an electronic device, and the like having a novel structure that can reduce power consumption.
  • the effects of one embodiment of the present invention are not limited to the effects listed above.
  • the effects listed above do not disturb the existence of other effects.
  • the other effects are effects which will be described in the following description and which are not mentioned in this item.
  • the effects not mentioned in this item can be derived from the description in the specification or the drawings by those skilled in the art, and can be appropriately extracted from these descriptions.
  • one embodiment of the present invention has at least one of the effects listed above and / or other effects. Therefore, one embodiment of the present invention does not have the above-described effects in some cases.
  • FIG. 1 is a block diagram illustrating one embodiment of the present invention.
  • FIG. 2 is a block diagram illustrating one embodiment of the present invention.
  • FIG. 3 is a flowchart illustrating one embodiment of the present invention.
  • FIG. 4 is a flowchart illustrating one embodiment of the present invention.
  • FIG. 5 is a timing chart illustrating operation of the power storage device of one embodiment of the present invention.
  • FIG. 6 is a block diagram illustrating one embodiment of the present invention.
  • FIG. 7 is a circuit diagram illustrating one embodiment of the present invention.
  • FIG. 8A is a circuit diagram illustrating one embodiment of the present invention.
  • FIG. 8B is a circuit diagram illustrating one embodiment of the present invention.
  • FIG. 9A shows a charge / discharge curve.
  • FIG. 9A shows a charge / discharge curve.
  • FIG. 9B is a circuit diagram illustrating one embodiment of the present invention.
  • FIG. 9C is a circuit diagram illustrating one embodiment of the present invention.
  • FIG. 10A is a timing chart illustrating operation of the power storage device of one embodiment of the present invention.
  • FIG. 10B is a timing chart illustrating operation of the power storage device of one embodiment of the present invention.
  • FIG. 11 is a cross-sectional view illustrating a configuration example of a semiconductor device.
  • FIG. 12 is a cross-sectional view illustrating a configuration example of a semiconductor device.
  • FIG. 13A is a cross-sectional view illustrating a structural example of a transistor.
  • FIG. 13B is a cross-sectional view illustrating a structural example of a transistor.
  • FIG. 13A is a cross-sectional view illustrating a structural example of a transistor.
  • FIG. 13C is a cross-sectional view illustrating a structural example of a transistor.
  • FIG. 14A is a flowchart showing a manufacturing process of an electronic component.
  • FIG. 14B is a schematic perspective view of the electronic component.
  • FIG. 15A is a diagram illustrating an example of a secondary battery.
  • FIG. 15B is a diagram illustrating an example of a secondary battery.
  • FIG. 15C is a diagram illustrating a configuration example of a plurality of secondary batteries.
  • FIG. 15D is a diagram illustrating a configuration example of a plurality of secondary batteries.
  • FIG. 16A is a diagram illustrating an example of a battery pack.
  • FIG. 16B is a diagram illustrating an example of a battery pack.
  • FIG. 16C is a diagram illustrating an example of a battery pack.
  • FIG. 17A illustrates a vehicle of one embodiment of the present invention.
  • FIG. 17B is a diagram illustrating a vehicle of one embodiment of the present invention.
  • FIG. 17C illustrates a vehicle of one embodiment of the present invention.
  • FIG. 18A illustrates a vehicle of one embodiment of the present invention.
  • FIG. 18B illustrates a power storage system of one embodiment of the present invention.
  • FIG. 19A illustrates an electronic device of one embodiment of the present invention.
  • FIG. 19B illustrates an electronic device of one embodiment of the present invention.
  • FIG. 19C illustrates an electronic device of one embodiment of the present invention.
  • FIG. 20 illustrates an electronic device of one embodiment of the present invention.
  • FIG. 21A illustrates an electronic device of one embodiment of the present invention.
  • FIG. 21A illustrates an electronic device of one embodiment of the present invention.
  • FIG. 21B is a diagram illustrating an electronic device of one embodiment of the present invention.
  • FIG. 21C is a diagram illustrating a secondary battery of one embodiment of the present invention.
  • FIG. 21D is a diagram illustrating an electronic device of one embodiment of the present invention.
  • FIG. 21E illustrates an electronic device of one embodiment of the present invention.
  • FIG. 22 is a circuit diagram illustrating one embodiment of the present invention.
  • FIG. 23 is a circuit diagram illustrating one embodiment of the present invention.
  • FIG. 24 shows the evaluation result of the temperature sensor.
  • the ordinal numbers “first”, “second”, and “third” are given in order to avoid confusion between components. Therefore, the number of components is not limited. In addition, the order of the components is not limited. Further, for example, a component referred to as “first” in one embodiment of the present specification is a component referred to as “second” in another embodiment or the claims. It is possible. Also, for example, a component referred to as “first” in one embodiment of the present specification and the like may be omitted in other embodiments or the claims.
  • top view also referred to as a “plan view”
  • perspective view some components are not illustrated in some cases in order to make the drawings easy to understand.
  • electrode does not limit the functions of these components functionally.
  • an “electrode” may be used as part of a “wiring” and vice versa.
  • the term “electrode” or “wiring” includes a case where a plurality of “electrodes” or “wirings” are integrally formed.
  • electrode B on insulating layer A it is not necessary that electrode B is formed directly on insulating layer A, and another configuration may be provided between insulating layer A and electrode B. Do not exclude those containing elements.
  • the functions of the source and the drain are interchanged depending on operating conditions, such as when transistors having different polarities are used or when the direction of current changes in circuit operation; therefore, which is the source or the drain is limited. It is difficult. Therefore, in this specification, the terms “source” and “drain” can be used interchangeably.
  • the term “electrically connected” includes the case where components are directly connected and the case where components are connected via an “object having any electric function”.
  • the “something having an electrical action” as long as it allows transmission and reception of an electric signal between connection targets. Therefore, even if it is expressed as "electrically connect", in an actual circuit, there is a case where there is no physical connection portion and only the wiring is extended.
  • parallel refers to, for example, a state where two straight lines are arranged at an angle of ⁇ 10 ° or more and 10 ° or less. Therefore, the case where the angle is ⁇ 5 ° to 5 ° is also included.
  • “Vertical” and “perpendicular” refer to, for example, a state in which two straight lines are arranged at an angle of 80 ° or more and 100 ° or less. Therefore, a case where the angle is 85 ° or more and 95 ° or less is included.
  • the resist mask is removed after the end of the etching treatment, unless otherwise specified.
  • ⁇ ⁇ Voltage often indicates a potential difference between a certain potential and a reference potential (for example, a ground potential or a source potential). Therefore, the voltage and the potential can often be paraphrased with each other. In this specification and the like, the terms “voltage” and “potential” can be reworded unless otherwise specified.
  • semiconductor for example, if the conductivity is sufficiently low, it has characteristics as an “insulator”. Therefore, “semiconductor” can be replaced with “insulator”. In this case, the boundary between “semiconductor” and “insulator” is ambiguous, and it is difficult to strictly distinguish between the two. Therefore, the terms “semiconductor” and “insulator” described in this specification may be interchangeable with each other.
  • semiconductor even when the term “semiconductor” is used, for example, if the conductivity is sufficiently high, it has characteristics as a “conductor”. Therefore, “semiconductor” can be replaced with “conductor”. In this case, the boundary between “semiconductor” and “conductor” is ambiguous, and it is difficult to strictly distinguish between the two. Therefore, “semiconductor” and “conductor” described in this specification may be interchangeable with each other.
  • the “on state” of a transistor refers to a state where the source and the drain of the transistor can be regarded as being electrically short-circuited (also referred to as a “conducting state”).
  • the “off state” of a transistor refers to a state in which the source and the drain of the transistor can be regarded as being electrically disconnected (also referred to as a “non-conductive state”).
  • ON current sometimes refers to a current flowing between a source and a drain when a transistor is on.
  • off current sometimes refers to a current flowing between a source and a drain when a transistor is off.
  • the high power supply potential VDD (hereinafter, simply referred to as “VDD” or “H potential”) indicates a power supply potential higher than the low power supply potential VSS.
  • the low power supply potential VSS (hereinafter, also simply referred to as “VSS” or “L potential”) indicates a power supply potential lower than the high power supply potential VDD.
  • the ground potential can be used as VDD or VSS. For example, when VDD is the ground potential, VSS is a potential lower than the ground potential, and when VSS is the ground potential, VDD is a potential higher than the ground potential.
  • a gate means part or all of a gate electrode and a gate wiring.
  • a gate wiring refers to a wiring for electrically connecting a gate electrode of at least one transistor to another electrode or another wiring.
  • a source refers to part or all of a source region, a source electrode, and a source wiring.
  • the source region refers to a region in the semiconductor layer where the resistivity is equal to or less than a certain value.
  • the source electrode means a portion of the conductive layer connected to the source region.
  • the source wiring refers to a wiring for electrically connecting a source electrode of at least one transistor to another electrode or another wiring.
  • drain refers to part or all of a drain region, a drain electrode, and a drain wiring.
  • the drain region refers to a region in the semiconductor layer where the resistivity is equal to or less than a certain value.
  • the drain electrode refers to a portion of the conductive layer connected to the drain region.
  • the drain wiring refers to a wiring for electrically connecting a drain electrode of at least one transistor to another electrode or another wiring.
  • a battery control circuit of one embodiment of the present invention or a power storage device including the battery control circuit may be referred to as “BTOS” in some cases.
  • BTOS may be able to construct a system with low power consumption.
  • BTOS may be able to construct a system with a simple circuit.
  • the battery control circuit of one embodiment of the present invention preferably has a function of protecting a battery. Further, the battery control circuit of one embodiment of the present invention may be referred to as a battery protection circuit.
  • FIG. 1 illustrates an example of a power storage device.
  • the power storage device 100 illustrated in FIG. 1 includes a battery control circuit 110 and an assembled battery 120.
  • the assembled battery 120 has a plurality of battery cells 121.
  • FIG. 1 shows an example having n battery cells 121.
  • the kth battery cell (k is an integer of 1 or more and n or less) may be referred to as a battery cell 121 (k).
  • the plurality of battery cells included in the battery pack 120 are electrically connected in series.
  • a secondary battery described in the embodiment below can be used as the battery cell.
  • a secondary battery having a wound battery element can be used.
  • the battery cell preferably has an outer package.
  • a cylindrical exterior body, a square exterior body, or the like can be used.
  • a metal plate covered with an insulator, a metal film sandwiched between insulators, or the like can be used.
  • the battery cell has, for example, a pair of a positive electrode and a negative electrode.
  • the battery cell may have a terminal electrically connected to the positive electrode and a terminal electrically connected to the negative electrode.
  • the battery cell may have part of the structure of the battery control circuit of one embodiment of the present invention.
  • the battery control circuit 110 includes n sets of cell balance circuits 130, transistors 140, 150, a detection circuit 181, and a control circuit 170.
  • the n sets of cell balance circuits 130 may be collectively referred to as a cell balance control unit.
  • the control circuit 170 has a function of transmitting and receiving signals to and from the n sets of cell balance circuits 130. Further, the control circuit 170 has a function of transmitting and receiving signals to and from an external circuit. Further, the control circuit 170 may include a voltage generation circuit in some cases.
  • the cell balance circuit 130 includes a voltage comparison unit 111 including a comparator 113 and a storage element 114, and a transistor 132, for each one corresponding battery cell 121.
  • the storage element 114 includes a capacitor 161 and a transistor 162.
  • One of a source and a drain of the transistor 162 is electrically connected to the terminal P1, and the other is electrically connected to one electrode of the capacitor 161. Note that the potential of the terminal P1 differs for each corresponding battery cell.
  • the cell balance circuit 130 corresponding to the battery cell 121 (k) is a cell balance circuit 130 (k), and the terminal P1 of the cell balance circuit 130 (k) is a terminal P1 (k).
  • the gate of the transistor 162 is electrically connected to the terminal W1.
  • a first terminal (terminal VC1 for the first battery cell, terminal VC2 for the second battery cell, terminal VCN for the nth battery cell) is electrically connected to the positive electrode of one battery cell 121.
  • the second terminal (terminal VC2 for the first battery cell, terminal VC3 for the second battery cell, terminal VSSS for the nth cell) is electrically connected to the negative electrode.
  • One of a source and a drain of the transistor 132 is electrically connected to the first terminal, and the other is electrically connected to the second terminal.
  • the non-inverting input terminal of the comparator 113 is connected to the first terminal.
  • the gate of the transistor 132 is electrically connected to the output terminal of the comparator 113.
  • One electrode of the capacitor 161 is electrically connected to the inverting input terminal of the comparator 113, and the other electrode is electrically connected to the second terminal.
  • one of the source and the drain of the transistor 132 is electrically connected to a terminal electrically connected to the positive electrode of the battery cell, or the other of the source and the drain of the transistor 132 is electrically connected to the negative electrode of the battery cell.
  • the resistor 131 may be provided at any of the terminals. In the example illustrated in FIG. 1, a resistor 131 is provided between one of the source and the drain of the transistor 132 and a terminal electrically connected to the positive electrode of the battery cell.
  • the negative electrode of the first battery cell 121 when the negative electrode of the first battery cell 121 is electrically connected to the positive electrode of the second battery cell 121, it is connected to the negative electrode of the first battery cell 121.
  • the terminal and the terminal connected to the positive electrode of the second battery cell 121 are, for example, common.
  • a signal is given from the control circuit 170 to the terminal W1 corresponding to each battery cell 121.
  • the terminal P1 (k) is supplied with the voltage Vr (k).
  • the voltage Vr (k) is, for example, a variable voltage. Alternatively, the voltage Vr (k) may be a fixed voltage.
  • the circuit for generating and controlling the voltage Vr (k) may be provided separately from the configuration of the battery control circuit 110, or the battery control circuit 110 may generate and / or control the voltage Vr (k). It may have a function to perform.
  • a transistor including an oxide semiconductor in a channel formation region (hereinafter, referred to as an OS transistor) is preferably used.
  • an OS transistor a transistor including an oxide semiconductor in a channel formation region
  • a structure in which a memory element including an OS transistor is used is employed, so that a desired voltage can be obtained by utilizing extremely low leakage current (hereinafter, referred to as off-state current) flowing between a source and a drain when off. It can be held in a storage element.
  • the storage element 114 has a function of supplying the voltage Vr (k) given from the terminal P1 (k) or a voltage corresponding to the voltage Vr (k) to the inverting input terminal of the comparator 113. Further, when the voltage Vr (k) reaches a predetermined voltage (for example, Vm (k) described later), it has a function of holding the voltage at the inverting input terminal of the comparator 113.
  • a predetermined voltage for example, Vm (k) described later
  • the terminal P1 (k) is a voltage to be given as a difference between the voltage of the negative electrode of the corresponding battery cell 121 (k) (hereinafter, voltage Vn (k)) and the voltage of the positive electrode and the negative electrode of the battery cell 121 during charging. , And the voltage Vc (hereinafter, voltage Vm (k)) to the inverting input terminal of the comparator 113.
  • the voltage Vn (1) is the voltage of the terminal VC2
  • the voltage Vm (1) that is, the potential applied to the terminal P1 (1) is the sum of the voltage of the terminal VC2 and the voltage Vc.
  • the voltage Vn (2) is the voltage of the terminal VC3, and the voltage Vm (2), that is, the potential applied to the terminal P1 (2) is the sum of the terminal VC3 and the voltage Vc.
  • the voltage generation circuit 119 be electrically connected to the terminal P1 (k).
  • the negative electrode of each battery cell 121 is electrically connected to the voltage generation circuit 119.
  • the voltage generation circuit 119 has a function of generating the voltage Vm (k) as a sum with the voltage Vc based on the voltage Vn (k). Note that the voltage Vn is different in each battery cell 121. Therefore, the generated voltage Vm is also different. That is, for example, the voltage applied to the terminal P1 (k) differs for each battery cell 121.
  • the voltage generation circuit 119 or a part thereof may be included in the cell balance circuit 130.
  • the node AN When the transistor 162 is turned off and the node AN connected to the inverting input terminal of the comparator 113 is electrically insulated, the voltage Vm can be held at the node AN. Further, the node AN is connected to the negative electrode of the corresponding battery cell 121 via the capacitor 161. Therefore, when the potential of the negative electrode of the corresponding battery cell 121 fluctuates with the charging / discharging of each cell, the potential of the node AN also fluctuates accordingly. At this time, the potential of the node AN fluctuates so as to be the sum of Vc with reference to the voltage of the negative electrode of the corresponding battery cell 121. Note that the node AN corresponding to the terminal P1 (k) may be referred to as a node AN (k).
  • the comparator 113 compares the voltage of the positive electrode of the battery cell 121 (k) with the voltage Vm (k), and outputs a high-potential signal from the output terminal when the voltage of the positive electrode matches the voltage Vm (k).
  • the transistor 132 When the high potential signal is supplied to the transistor 132, the transistor 132 is turned on, so that part or most of the current flowing through the battery cell 121 can flow through the transistor 132. For example, by turning on the transistor 132, the charging current of the battery cell 121 can be limited or charging can be stopped.
  • the cell balance circuit included in the power storage device of one embodiment of the present invention can monitor the voltage of the battery cell and limit the charging current at a predetermined voltage.
  • the voltage Vn is, for example, the voltage of the terminal VC2 in the case of the first battery cell 121, and the voltage of the terminal VC3 in the case of the second battery cell 121.
  • a terminal VDDD and a terminal VSSS are electrically connected to both ends of the battery pack 120. It is preferable that a charge control circuit be electrically connected to the terminals VDDD and VSSS.
  • the charge control circuit may be provided separately from the configuration of the battery control circuit 110, or the battery control circuit 110 may have a charge control function.
  • a coulomb counter is electrically connected to the terminals VDDD and VSSS.
  • the coulomb counter may be provided separately from the configuration of the battery control circuit 110, or the battery control circuit 110 may have the function of a coulomb counter.
  • the cell balance circuit 130 has a function of individually controlling a voltage difference (a voltage difference between the positive electrode and the negative electrode) between both ends of each of the plurality of connected battery cells 121.
  • the cell balance circuit 130 can cause the storage element 114 to hold a preferable value as the upper limit voltage of the positive electrode for each battery cell 121.
  • the cell balance circuit 130 determines whether the transistor 132 is turned on or off depending on the relationship between the voltage of the positive electrode of the battery cell 121 and the voltage of the non-inverting input terminal of the comparator 113. Perform control. By controlling the transistor 132, the ratio between the amount of current flowing through the resistor 131 and the amount of current flowing through the battery cell 121 can be adjusted. For example, when the charging of the battery cell 121 is stopped, a current flows through the resistance element 131 and the current flowing through the battery cell 121 is limited.
  • a plurality of battery cells 121 are electrically connected in series between the terminal VDDD and the terminal VSSS. By flowing a current between the terminal VDDD and the terminal VSSS, the plurality of battery cells 121 are charged.
  • insufficient charging means, for example, that the voltage difference between the positive electrode and the negative electrode is lower than a desired voltage.
  • the n sets of cell balance circuits 130 it is possible to reduce the state of the plurality of battery cells 121 after charging, for example, the variation when fully charged. Therefore, the capacity of the whole assembled battery 120 may increase. Further, by increasing the capacity, the number of charge / discharge cycles of the battery cell 121 may be reduced in some cases, so that the durability of the battery pack 120 may be increased.
  • FIG. 2 illustrates an example in which the cell balance circuit 130 includes the voltage generation circuit 119 in the power storage device 100.
  • the configuration shown in FIG. 1, for example, the control circuit 170 and the like are partially omitted from the cell balance circuit 130 shown in FIG. 2, but the configuration shown in FIG. 1 can be used.
  • a corresponding voltage generation circuit 119 is provided for each battery cell 121.
  • the voltage generation circuit 119 illustrated in FIG. 2 includes a storage element 174 and a comparator 173.
  • the storage element 174 includes a capacitor 171 and a transistor 172.
  • One of a source and a drain of the transistor 172 and one electrode of the capacitor 171 are electrically connected to a non-inverting input terminal of the comparator 173.
  • the other electrode of the capacitor 171 is electrically connected to the terminal P2.
  • the gate of the transistor 172 is electrically connected to the terminal W2.
  • the other of the source and the drain of the transistor 172 is electrically connected to a terminal connected to the negative electrode of the corresponding battery cell 121.
  • An output terminal of the comparator 173 is electrically connected to the terminal W1, that is, the gate of the transistor 162 included in the voltage comparison unit 111.
  • the terminal P1 (k) is electrically connected to the inverting input terminal of the comparator 173.
  • the description of the storage element 114 may be referred to.
  • OS transistor it is preferable to use an OS transistor as the transistor 172.
  • the extremely low leakage current hereinafter referred to as off-state current
  • off-state current the extremely low leakage current flowing between a source and a drain when the transistor 172 is turned off
  • a desired voltage can be held at the non-inverting input terminal of the comparator 173.
  • the voltage generation circuit 119 uses the procedure described below with reference to FIG. 3 to reference the voltage of the negative electrode of the battery cell 121 (k), for example, the aforementioned voltage Vn (k), to the reference voltage of the voltage of the positive electrode, for example, the aforementioned voltage.
  • the voltage Vm (k) can be generated.
  • an example in which the voltage Vm (k) is generated as a sum with the voltage Vc based on the voltage Vn (k) will be described.
  • step S200 the process starts in step S200.
  • step S201 a high-potential signal is supplied to the terminal W2.
  • the transistor 172 is turned on.
  • the voltage Vn can be supplied to the non-inverting input terminal of the comparator 173.
  • step S202 a low potential signal is supplied to the terminal W2.
  • the transistor 172 is turned off.
  • step S203 the voltage of the terminal P2 is increased by the voltage Vc.
  • the terminal P2 when the terminal P2 is at the ground potential, the terminal P2 may be set to the voltage Vc.
  • the voltage at the non-inverting input terminal of the comparator 173 increases by the voltage Vc due to capacitive coupling via the capacitive element 171. That is, the voltage of the non-inverting input terminal of the comparator 173 can be set to the voltage Vm (k) which is the sum of the voltage Vn and the voltage Vc.
  • the voltage generation circuit 119 can generate the voltage Vm (k) and hold the voltage at the non-inverting input terminal.
  • the voltage Vn of the negative electrode of the battery cell 121 differs depending on the charging rate of the battery cell 121. Therefore, when the voltage Vm is generated by the above method, it is preferable that the difference between the charging rates of the plurality of battery cells 121 is small. Further, it is preferable that voltage Vc is set according to the charging rate of battery cell 121.
  • step S204 the voltage Vr (k) is applied to the terminal P1 (k).
  • the voltage Vr (k) is a variable voltage.
  • step S205 the voltage Vr (k) is swept. For example, a voltage gradually swept from the ground potential to a higher voltage side may be applied. For example, a voltage increased by ⁇ Vr may be applied. At this time, for example, since the voltage applied to the terminal P1 (k) is lower than the voltage Vm (k), a high potential signal is applied to the gate of the transistor 162 from the comparator 173, and the transistor 162 is on.
  • step S206 if the voltage Vr (k) is equal to or higher than the voltage Vm (k), the process proceeds to step S207. If the voltage Vr (k) is lower than the voltage Vm (k), the process returns to step S205.
  • step S207 a low potential signal is output from the comparator 173. Accordingly, a low potential signal is supplied to the gate of the transistor 162 included in the voltage comparison unit 111, so that the transistor 162 is turned off. When the transistor 162 is turned off, the voltage Vm (k) is held at the inverting input terminal of the comparator 113. Next, the process ends in step S299.
  • the voltage Vm (k) can be held at the inverting input terminal of the comparator 113 included in the voltage comparison unit 111 using the voltage generation circuit 119.
  • step S300 the process starts.
  • step S301 a high-potential signal is supplied to the terminal W1.
  • step S302 the voltage Vm (k) is applied to the terminal P1 (k).
  • step S303 a low-potential signal is supplied to the terminal W1.
  • the voltage Vm (k) is held at the inverting input terminal of the comparator 113.
  • step S304 the battery cell 121 (k) is charged.
  • step S305 if the voltage of the positive electrode is equal to or higher than Vm (k), the process proceeds to step S306. If it is lower than Vm (k), the process returns to step S304.
  • step S306 the transistor 132 is turned on from the off state. In this step, charging of the secondary battery is stopped. Alternatively, the current of the secondary battery is limited.
  • FIG. 5 is a timing chart showing an operation example of the power storage device shown in FIG. FIG. 5 shows a timing chart corresponding to the battery cells 121 (1) and 121 (2).
  • the voltage of the negative electrode of the battery cell 121 (k) is applied to the terminal P1 (k).
  • the voltage VC2 (t0) is supplied to the terminal P1 (1)
  • the voltage VC3 (t0) is supplied to the terminal P1 (2).
  • the sum of the voltage of the negative electrode of battery cell 121 (k) and voltage Vc is applied to terminal P1 (k).
  • the sum of the voltage VC2 (t0) and the voltage Vc is given to the terminal P1 (1)
  • the sum of the voltage VC3 (t0) and the voltage Vc is given to the terminal P1 (2).
  • a high-potential signal (High level) is supplied to the terminal W1 (k), and a potential is supplied from the terminal P1 (k) to the node AN (k).
  • a high-potential signal is supplied to the terminals W1 (1) and W1 (2), a potential is supplied from the terminal P1 (1) to the node AN (1), and a potential is supplied from the terminal P1 (2) to the node AN (2).
  • the negative electrode of the battery cell 121 (k) is shown as being constant between the time t1 and the time t3, but the potential may actually change.
  • a low-potential signal (Low level) is supplied to the terminal W1 (k), the potential of the node AN (k) is held, and a reference potential is programmed into the inverting input terminal of the comparator 113. Thereafter, the potential of the node AN (k) fluctuates in accordance with the fluctuation of the potential of the negative electrode.
  • the comparator 113 compares a potential programmed to the inverting input terminal with a potential applied to the non-inverting input terminal. In the example shown in FIG. 5, the potential of the node AN (2) is compared with the potential of the terminal VC2.
  • the potential of each battery cell 121 changes due to charging or the like.
  • the potential of VC2 which is the potential of the negative electrode of battery cell 121 (1)
  • the potential of node AN (1) also increases.
  • the potential of VC3 which is the potential of the negative electrode of battery cell 121 (2)
  • the potential of node AN (2) also increases.
  • the potential of VC2 is lower than the potential of node AN (2), and is lower than the comparator 113 of the cell balance circuit 130 (2) which compares the potential of node AN (2) with the potential of terminal VC2.
  • a potential signal is output.
  • the transistor 132 is turned on, and charging of the battery cell 121 (2) is stopped.
  • the potential of the node AN (2) is shown as being constant between the time t5 and the time t6, but the potential may actually change.
  • the battery control circuit 110 preferably has a function as a battery protection circuit.
  • the transistor 140 and the transistor 150 have a function of controlling charging or discharging of the battery pack 120.
  • the on / off state of the transistor 140 is controlled by the control signal T1, and whether or not the battery pack 120 is charged is controlled.
  • the conductive state or the non-conductive state of the transistor 150 is controlled by the control signal T2, and whether or not the battery pack 120 is discharged is controlled.
  • one of the source and the drain of the transistor 140 is electrically connected to the terminal VM.
  • the terminal VM is, for example, electrically connected to the negative pole of the charger.
  • the terminal VM is electrically connected to, for example, a load at the time of discharging.
  • the transistor 140 and the transistor 150 be electrically connected to the detection circuit 181.
  • the detection circuit 181 preferably has a function of detecting overcharge and overdischarge of the battery pack 120.
  • the detection circuit 181 preferably has a function of detecting a discharge overcurrent and a charge overcurrent of the battery pack 120.
  • the detection circuit 181 preferably has a function of detecting a short circuit in a circuit group operated using the battery pack 120. It is preferable that the detection circuit 181 be electrically connected to the terminals VDDD and VSSS.
  • the detection circuit 181 may be electrically connected to the positive electrode and the negative electrode of each battery cell 121. In such a case, the detection circuit 181 may be able to detect overcharge and overdischarge for each battery cell 121 in some cases.
  • the detection circuit 181 has a function of transmitting and receiving signals to and from the control circuit 170.
  • the battery control circuit 110 may have a function of observing a voltage value (monitor voltage) of each terminal of the battery cell 121 of the battery pack 120 and a current value (monitor current) flowing through the battery pack.
  • a voltage value (monitor voltage) of each terminal of the battery cell 121 of the battery pack 120
  • a current value (monitor current) flowing through the battery pack.
  • a configuration in which the on-state current of the transistor 140 or the transistor 150 is observed as a monitor current may be employed.
  • a resistor may be provided in series with the transistor 140 or the like, and the current value of the resistor may be observed.
  • the battery control circuit 110 may have a function of measuring the temperature of the battery cell 121 and controlling charging and discharging of the battery cell based on the measured temperature.
  • a lithium ion secondary battery cell can be used. Further, the battery cell 121 is not limited to a lithium ion secondary battery cell, and for example, a material having an element A, an element X, and oxygen can be used as a positive electrode material of a secondary battery.
  • Element A is at least one element selected from Group 1 elements and Group 2 elements. For example, an alkali metal such as lithium, sodium, and potassium can be used as a Group 1 element. In addition, for example, calcium, beryllium, magnesium, or the like can be used as a Group 2 element.
  • the element X for example, one or more selected from a metal element, silicon, and phosphorus can be used. Further, the element X is at least one selected from cobalt, nickel, manganese, iron, and vanadium. Representatively, lithium cobalt composite oxide LiCoO 2 and lithium iron phosphate LiFePO 4 are given.
  • a structure in which a memory element including an OS transistor is used is used, which utilizes a very low leakage current (hereinafter, referred to as an off-state current) flowing between a source and a drain at the time of off-state. Can be stored in the storage element. At this time, since the power supply of the storage element can be turned off, the reference voltage can be held with extremely low power consumption by using a storage element including an OS transistor.
  • an off-state current very low leakage current flowing between a source and a drain at the time of off-state.
  • a storage element including an OS transistor can hold an analog potential.
  • the voltage of the secondary battery can be held in the storage element without being converted into a digital value using an analog-digital conversion circuit. No conversion circuit is required, and the circuit area can be reduced.
  • a reference voltage can be rewritten and read by charging or discharging an electric charge, so that a monitor voltage can be obtained and read virtually indefinitely.
  • a storage element using an OS transistor does not involve a structural change at an atomic level, and thus has excellent rewriting durability.
  • characteristic instability due to an increase in electron capture centers, which occurs in a flash memory is not observed.
  • the OS transistor has characteristics such as extremely low off-state current and good switching characteristics even in a high-temperature environment. Therefore, even in a high temperature environment, control of charging or discharging of the battery pack 120 can be performed without malfunction.
  • a memory element using an OS transistor can be freely arranged by being stacked over a circuit using an Si transistor or the like, integration can be easily performed. Further, the OS transistor can be manufactured using a manufacturing apparatus similar to that of the Si transistor, and thus can be manufactured at low cost.
  • the OS transistor can be a four-terminal semiconductor element including a back gate electrode in addition to the gate electrode, the source electrode, and the drain electrode.
  • the input and output of a signal flowing between the source and the drain can be independently controlled according to a voltage applied to the gate electrode or the back gate electrode. Therefore, the circuit can be designed with the same thinking as the LSI.
  • an OS transistor has better electric characteristics than a Si transistor in a high-temperature environment. Specifically, even at a high temperature of 100 ° C. or more and 200 ° C. or less, preferably 125 ° C. or more and 150 ° C. or less, a favorable switching operation can be performed because the ratio of on-state current to off-state current is large.
  • OS transistor it is preferable to use an OS transistor as the transistor 162 and the transistor 172. Further, an OS transistor may be used as the transistor 132. Further, an OS transistor may be used as the transistor 140 and the transistor 150.
  • the comparator can be configured using a Si transistor. Alternatively, the comparator may be configured using an OS transistor.
  • FIG. 6 illustrates a power storage device 100 of one embodiment of the present invention, in addition to the structure illustrated in FIG. 1 shows an example of a configuration having an SD. Note that these circuits are preferably included in the detection circuit 181 as shown in FIG. Further, at least a part of the oscillation circuit OSC, the counter CNT, the logic circuit LC1, and the logic circuit LC2 may be included in the control circuit 170.
  • the power storage device 100 illustrated in FIG. 6 includes a temperature sensor TS and a micro short detection circuit MSD. These circuits may be included in the detection circuit 181.
  • the detection circuit 185 has a function of detecting overcharge and overdischarge of the battery pack 120.
  • the detection circuit 186 has a function of detecting a discharge overcurrent and a charge overcurrent of the battery pack 120.
  • FIG. 7 shows the details of the detection circuit 185, and
  • FIG. 8 shows the details of the detection circuit 186.
  • the short-circuit detection circuit SD has a function of detecting a short-circuit in a circuit group operated using the battery pack 120.
  • the detection circuit SD is electrically connected to the terminal SENS.
  • the terminal SENS detects, for example, a charging current and a discharging current of the battery pack 120.
  • a signal is supplied from the output terminal OUT11 and the output terminal OUT12 of the detection circuit 185 to the oscillation circuit OSC. Signals are supplied from the output terminal OUT11 to the logic circuit LC1 and from the output terminal OUT12 to the logic circuit LC2.
  • a signal is supplied from the output terminal OUT21 and the output terminal OUT22 of the detection circuit 186 to the oscillation circuit OSC. Signals are supplied from the output terminal OUT21 to the logic circuit LC1 and from the output terminal OUT22 to the logic circuit LC2.
  • the oscillation circuit OSC outputs a clock signal that oscillates at a predetermined frequency.
  • the output terminal OUT11 and the output terminal OUT12 of the detection circuit 185 and the output terminal OUT21 and the output terminal OUT22 of the detection circuit 186 are input to the oscillation circuit OSC, and the operation of the oscillation circuit OSC is controlled by these signals.
  • the counter CNT has a function of counting for a certain period in synchronization with the clock signal output from the oscillation circuit OSC.
  • the signal counted by the counter CNT is input to the logic circuits LC1 and LC2.
  • the logic circuits LC1 and LC2 control the battery pack 120 based on the signal counted by the counter CNT. For example, a control signal is supplied to the transistor 140 and the transistor 150 to control charging and discharging of the battery pack 120.
  • the logic circuits LC1 and LC2 can shift voltage levels to control the transistors 140 and 150.
  • the conduction state or the non-conduction state is controlled by the control signal T ⁇ b> 1, and whether or not the battery pack 120 is charged is controlled.
  • a conduction state or a non-conduction state is controlled by the control signal T2, and whether or not the battery pack 120 is discharged is controlled.
  • the transistor 140 and the transistor 150 are not included in the battery control circuit 110, and may be provided on a chip or the like outside the transistor.
  • one of a source and a drain of the transistor 150 is electrically connected to the terminal VSSS, and the other is electrically connected to one of the source and the drain of the transistor 140.
  • the other of the source and the drain of the transistor 140 is electrically connected to the terminal VM.
  • the terminal VM is, for example, electrically connected to the negative pole of the charger.
  • the terminal VM is electrically connected to, for example, a load at the time of discharging.
  • FIG. 7 shows an example of a circuit diagram of the detection circuit 185.
  • the detection circuit 185 illustrated in FIG. 7 is electrically connected to terminals (for example, a terminal VC1, a terminal VC2, a terminal VC3, a terminal VCN, a terminal VSSS, and the like) at both ends of a plurality of battery cells 121 included in the battery pack 120.
  • terminals for example, a terminal VC1, a terminal VC2, a terminal VC3, a terminal VCN, a terminal VSSS, and the like
  • the voltage between the terminal VC1 and the terminal VC2 is divided by a resistor.
  • a resistance-divided voltage is applied to the inverting input terminal of the first comparator (comparator 113), and the first storage element (storage element 114) is electrically connected to the non-inverting input terminal.
  • the signal SH1-1 is supplied to a gate of the transistor included in the first storage element.
  • the non-inverting input terminal of the second comparator (comparator 113) is supplied with a resistance-divided voltage, and the inverting input terminal is electrically connected to a second storage element (storage element 114).
  • the signal SH2-1 is supplied to a gate of the transistor included in the second storage element. Note that the voltage divided by the resistance may be generated by the voltage generation circuit 119.
  • the voltage supplied from the terminal VT is held in the first storage element.
  • the held voltage is a voltage corresponding to overcharge detection.
  • the output from the first comparator is inverted.
  • the output from the first comparator is supplied to the AND circuit NA1 via the level shifter LS.
  • the voltage given from the terminal VT is held in the second storage element.
  • the held voltage is a voltage corresponding to overdischarge detection.
  • the output from the second comparator is inverted.
  • the output from the second comparator is provided to the AND circuit NA2 via the level shifter LS.
  • the memory element includes the OS transistor, voltage can be stably held for a long time. Therefore, it is possible to cut off the power supply of a circuit that supplies a signal to the terminal VT or to stop part of the operation of the circuit, so that power consumption can be reduced.
  • two comparators for monitoring the voltage between the terminals VC2 and VC3 are provided, and the signals SH1-2 and SH2-2 are provided as control signals. Further, two comparators for monitoring a voltage between the terminal VCN and the terminal VSSS are provided, and a signal SH1-N and a signal SH2-N are provided as control signals.
  • each terminal VT electrically connected to the plurality of storage elements 114 included in the detection circuit 185 be generated by the voltage generation circuit 119. Further, different voltages can be applied to the respective terminals VT.
  • the threshold value of the comparator constituting the detection circuit 185 may be different between the case where the output changes from the L level to the H level and the case where the output changes from the H level to the L level, that is, the comparator may be a hysteresis comparator.
  • the configuration of the detection circuit 185 may be used not only for detecting overcharge, overdischarge, and the like, but also for controlling charging voltage, for example. More specifically, for example, when controlling the charging voltage of the secondary battery within a certain voltage range including a desired charging voltage when performing charging, the configuration of the detection circuit 185 is changed to the upper limit and the lower limit of the voltage range. May be used for the control.
  • FIG. 8A shows an example of a circuit diagram of the detection circuit 186.
  • the detection circuit 186 has two comparators 113.
  • the signal SH3 is supplied to the non-inverting input terminal of one comparator 113, and the storage element 114 that holds the voltage corresponding to the detection of the discharge overcurrent is electrically connected.
  • the terminal SENS is electrically connected to the inverting input terminal.
  • the terminal SENS is electrically connected to the non-inverting input terminal of the other comparator 113.
  • the signal SH4 is supplied to the inverting input terminal, and the storage element 114 corresponding to the detection of the charging overcurrent is electrically connected.
  • the output from the output terminal OUT21 is inverted.
  • the temperature sensor TS has a function of measuring the temperature of the battery pack 120 or the power storage device 100 including the battery pack 120.
  • FIG. 8B is a circuit diagram illustrating an example of the temperature sensor TS. Note that the circuit diagram illustrated in FIG. 8B may represent a part of the circuit of the temperature sensor TS.
  • Each applied voltage VT is held by a storage element 114 electrically connected to the inverting input terminal.
  • the voltages Tm1, Tm2, and Tm3 may be provided from, for example, the voltage generation circuit 119.
  • a comparator 113 is electrically connected to each of the output terminals OUT51, OUT52, and OUT53.
  • the storage element 114 is electrically connected to the inverted output terminal of each comparator 113.
  • a terminal electrically connected to the gate of the transistor 162 included in each storage element 114 is denoted by SH5.
  • SH5 of each transistor 162 included in each storage element 114 electrically connected to the output terminals OUT51, OUT52, and OUT53 is supplied with Tm1, Tm2, and Tm3 as the voltage VT.
  • a voltage corresponding to the measured temperature is applied to the input terminal Vt.
  • the input terminal Vt is provided to each non-inverting input terminal of the three comparators 113.
  • OS transistors have a property in which the resistance value decreases as the temperature increases. By utilizing this property, the environmental temperature can be converted to a voltage.
  • This voltage may be applied to the input terminal Vt, for example. That is, for example, a voltage corresponding to the resistance value of the OS transistor is supplied to the input terminal Vt. Alternatively, for example, a voltage corresponding to the resistance value of the OS transistor is supplied to the input terminal Vt via a conversion circuit or the like.
  • the logic circuit LC1 and the logic circuit LC2 detect the output of the temperature sensor TS, and when the temperature exceeds the operable temperature range of the battery pack 120, the transistor 140 and / or the transistor 150 are turned off to charge and / or charge. The discharge may be stopped.
  • the detection circuit MSD has a function of detecting a micro short circuit of the battery pack 120. For example, by monitoring either or both of the voltage and the current, a micro short circuit can be detected.
  • FIG. 9A shows an example of a charging waveform indicating a micro short circuit. The horizontal axis in FIG. 9A is the charging capacity Cb of the secondary battery, and the vertical axis is the voltage Vb of the secondary battery. A micro short circuit is suggested in a region circled by a broken line.
  • a micro short circuit refers to a minute short circuit inside the secondary battery.It does not mean that the positive and negative electrodes of the secondary battery are short-circuited and cannot be charged / discharged. It refers to the phenomenon that short-circuit current flows for a short period.
  • the cause of the micro short circuit is that deterioration occurs due to charge and discharge being performed a plurality of times, and metal elements such as lithium and cobalt are precipitated inside the battery, and the precipitate grows, so that a part of the positive electrode and the negative electrode are separated. It is presumed that a local concentration of current occurs in the portion and a portion of the separator stops functioning, or a by-product is generated.
  • FIG. 9B is a circuit diagram showing an example of the detection circuit MSD. Note that the circuit diagram illustrated in FIG. 9B may illustrate a part of the detection circuit MSD.
  • the detection circuit MSD is supplied with voltages from the terminals VC1, VC2, VC3, and VCN.
  • the detection circuit MSD has a comparator 113 corresponding to each battery cell 121.
  • the storage element 114 is connected to the inverting input terminal of the comparator 113.
  • Signal SH6 is applied to storage element 114.
  • the voltage of the battery cell 121 (eg, the positive voltage) is applied to the non-inverting input terminal of the comparator 113, and when the signal SH6 is at a high potential, the voltage is offset by the offset circuit OFS to the inverting input terminal.
  • Vofs When voltage Vofs is applied and signal SH6 is at a low potential, the applied voltage is held.
  • Vofs may be a voltage slightly smaller than the voltage.
  • a voltage lower than the terminal VC1 is generated by dividing a resistance between the terminal VC1 and the terminal VC2, You may give to an inversion input terminal.
  • FIG. 10A shows an example of a normal timing chart when the battery cell 121 is charged
  • FIG. 10B shows an example of a timing chart for detecting a micro short circuit.
  • the voltage of the battery cell 121 here, for example, the voltage of the terminal VC1 increases with time.
  • the voltage Vofs is a voltage offset from the voltage of the terminal VC1 when the signal SH6 is at a high potential, and the applied voltage is held when the signal SH6 is at a low potential. Therefore, as shown in FIG. 10A, the voltage Vofs increases stepwise at times t1, t2, and t3.
  • the output of the comparator 113 remains at the high potential.
  • the analog potential is held by a storage element including an OS transistor. can do. That is, for example, once the analog potential is applied, it is not necessary to apply the analog potential again (hereinafter, referred to as rewriting) during the period when the power storage device is protecting or monitoring the secondary battery, or the frequency of rewriting is reduced. It can be very low. In the case where the analog potential is not held, for example, a block or a conversion circuit corresponding to each potential is used to frequently supply the analog potential. In such a case, the circuit area increases. On the other hand, when the analog potential is held, for example, the frequency of rewriting is extremely low. Therefore, the analog potential may be output and held in order from one conversion circuit. That is, a conversion circuit can be shared for each block or each potential.
  • FIG. 22 illustrates an example in which the voltage generation circuit 119 is electrically connected to the digital-to-analog conversion circuit 190, the cell balance circuit 130 (k), the detection circuit 185, the detection circuit 186, and the temperature sensor TS.
  • the analog potential output from the digital-to-analog conversion circuit 190 is supplied to and stored in the storage element 114 included in each block.
  • FIG. 23 shows the configuration of the temperature sensor TS used for the evaluation.
  • the comparators 113 electrically connected to the output terminals OUT51, OUT52, and OUT53 are referred to as comparators 113-1, 113-2, and 113-3, respectively.
  • the storage elements 114 electrically connected to the inverted output terminals of the comparators 113-1, 113-2, and 113-3 are referred to as storage elements 114-1, 114-2, and 114-3, respectively.
  • the terminals electrically connected to the gates of the transistors 162 included in the storage elements 114-1, 114-2, and 114-3 are SH5-1, SH5-2, and SH5-3, and the terminal for applying potential to the transistor 162 is vm. (1), vm (2) and vm (3).
  • the transistor 162 was used as the transistor 162 included in each of the memory elements 114-1, 114-2, and 114-3.
  • the transistor 162 is an n-channel transistor.
  • a sensor circuit 195 having an OS transistor 196 and a capacitor 197 is used as a sensor circuit.
  • One of a source and a drain of the OS transistor 196 is electrically connected to the non-inverting output terminal of the comparator 113 and one electrode of the capacitor 197, and the other terminal of the OS transistor 196 is electrically connected to the terminal va. Connected.
  • the terminal ga is electrically connected to a gate of the OS transistor 196.
  • the sensor circuits 195 electrically connected to the non-inverting output terminals of the comparators 113-1, 113-2, and 113-3 are sensor circuits 195-1, 195-2, and 195-3, respectively.
  • Terminals va electrically connected to the sensor circuits 195-1, 195-2, and 195-3 are referred to as terminals va (1), va (2), and va (3), respectively.
  • Terminals ga electrically connected to the sensor circuits 195-1, 195-2, and 195-3 are referred to as terminals ga (1), ga (2), and ga (3), respectively.
  • the threshold value of the OS transistor changes according to the temperature, it can be used as a temperature sensor element. That is, the OS transistor 196 has a function as a temperature sensor element.
  • the OS transistor 196 is an n-channel transistor.
  • the transistor 162 and the OS transistor 196 have the same structure.
  • the channel length, the channel width, the gate capacitance, and the like be set to the same level.
  • ⁇ Signals corresponding to 30 ° C., 40 ° C. and 50 ° C. were given to the temperature sensor TS.
  • a high potential signal is given to the terminal SH5-1 in an environment of 30 ° C.
  • a low potential signal is applied to the terminals SH5-2, SH5-3, ga (1), ga (2) and ga (3).
  • a voltage corresponding to the threshold of 30 ° C. is applied to the inverting input terminal of the comparator 113-1.
  • Vx-vth1 is stored.
  • vth1 is a threshold value of the transistor 162 at 30 ° C.
  • an example of a voltage at which the threshold value drops is, for example, a case where a value obtained by subtracting the voltage (here, the drain voltage) from the gate voltage when the source voltage is 0 V is smaller than the threshold value.
  • a high-potential signal is supplied to the terminal SH5-2, and a voltage vx is similarly supplied to the terminal vm (2) under the environment of 40 ° C., so that the voltage (vx ⁇ vth2) is supplied to the inverting input terminal of the comparator 113-2. Is stored.
  • vth2 is a threshold value of the transistor 162 at 40 ° C.
  • a high-potential signal is applied to the terminal SH5-3, and a voltage vx is similarly applied to the terminal vm (3) in an environment of 50 ° C., so that the voltage (vx ⁇ vth3) is applied to the inverting input terminal of the comparator 113-3. Is stored.
  • vth3 is a threshold value of the transistor 162 at 50 ° C.
  • the value corresponding to each temperature is stored in the inverting input terminal of each comparator 113.
  • the environmental temperature of the temperature sensor TS was changed from 25 ° C. to 60 ° C., and the voltages of the output terminals OUT51, OUT52, and OUT53 were measured.
  • the voltage vx was applied to the terminal va of each sensor circuit 195.
  • a high-potential signal may be always supplied to the terminal ga.
  • power consumption can be reduced. Since the OS transistor has extremely low leakage current, a given voltage can be held even when the terminal ga is at a low potential signal.
  • a high potential signal is applied at intervals of 100 ms for a period of about 100 ⁇ s or less.
  • FIG. 24 shows the evaluation results.
  • the horizontal axis indicates the environmental temperature
  • the vertical axis indicates the voltages of the output terminals OUT51, OUT52, and OUT53. It was confirmed that a low potential signal was output from each comparator at a predetermined temperature.
  • the semiconductor device illustrated in FIG. 11 includes a transistor 300, a transistor 500, and a capacitor 600.
  • 13A is a cross-sectional view of the transistor 500 in the channel length direction
  • FIG. 13B is a cross-sectional view of the transistor 500 in the channel width direction
  • FIG. 13C is a cross-sectional view of the transistor 300 in the channel width direction.
  • the transistor 500 is an OS transistor. Since the off-state current of the transistor 500 is small, data written over a long period can be retained by using the transistor 500 for an OS transistor included in a semiconductor device.
  • the transistor 500 is, for example, an n-channel transistor.
  • the battery control circuit described in the above embodiment may be formed of, for example, an OS transistor.
  • the transistor 162 and the transistor 172 included in the battery control circuit are preferably OS transistors.
  • the comparator included in the battery control circuit can be configured by an OS transistor.
  • the comparator included in the battery control circuit may be configured with only a single-polarity transistor, for example, only an n-channel transistor.
  • the semiconductor device described in this embodiment includes a transistor 300, a transistor 500, and a capacitor 600 as illustrated in FIG.
  • the transistor 500 is provided above the transistor 300
  • the capacitor 600 is provided above the transistor 300 and the transistor 500.
  • the transistor 300 is provided over a substrate 311 and includes a conductor 316, an insulator 315, a semiconductor region 313 which is part of the substrate 311, a low-resistance region 314a serving as a source or drain region, and a low-resistance region 314b.
  • the transistor 300 can be applied to, for example, a transistor included in the comparator in the above embodiment.
  • the transistor 300 in the transistor 300, as illustrated in FIG. 13C, the upper surface of the semiconductor region 313 and the side surface in the channel width direction are covered with the conductor 316 via the insulator 315.
  • the on-state characteristics of the transistor 300 can be improved by increasing the effective channel width. Further, the contribution of the electric field of the gate electrode can be increased, so that the off-state characteristics of the transistor 300 can be improved.
  • the transistor 300 may be either a p-channel transistor or an n-channel transistor.
  • the region where the channel of the semiconductor region 313 is formed, a region therearound, a low-resistance region 314a and a low-resistance region 314b serving as a source region or a drain region preferably contain a semiconductor such as a silicon-based semiconductor. It preferably contains crystalline silicon. Alternatively, it may be formed using a material including Ge (germanium), SiGe (silicon germanium), GaAs (gallium arsenide), GaAlAs (gallium aluminum arsenide), or the like. A structure using silicon whose effective mass is controlled by applying stress to the crystal lattice and changing the lattice spacing may be employed. Alternatively, by using GaAs, GaAlAs, or the like, the transistor 300 may be a HEMT (High Electron Mobility Transistor).
  • HEMT High Electron Mobility Transistor
  • the low-resistance regions 314a and 314b have an n-type conductivity element such as arsenic or phosphorus, or a p-type conductivity such as boron, in addition to the semiconductor material applied to the semiconductor region 313. Containing elements.
  • the conductor 316 functioning as a gate electrode includes a semiconductor material such as silicon, a metal material, or an alloy including an element imparting n-type conductivity such as arsenic or phosphorus, or an element imparting p-type conductivity such as boron.
  • a conductive material such as a material or a metal oxide material can be used.
  • the threshold voltage of the transistor can be adjusted by selecting the material of the conductor. Specifically, it is preferable to use a material such as titanium nitride or tantalum nitride for the conductor. Further, in order to achieve both conductivity and burying property, it is preferable to use a metal material such as tungsten or aluminum as a laminate for the conductor, and it is particularly preferable to use tungsten from the viewpoint of heat resistance.
  • the transistor 300 illustrated in FIG. 11 is an example, and there is no limitation on the structure, and an appropriate transistor may be used depending on a circuit configuration and a driving method.
  • the transistor 300 may have a structure similar to that of the transistor 500 including an oxide semiconductor, as illustrated in FIG. Note that details of the transistor 500 will be described later.
  • An insulator 320, an insulator 322, an insulator 324, and an insulator 326 are provided so as to be stacked in this order over the transistor 300.
  • the insulator 320, the insulator 322, the insulator 324, and the insulator 326 for example, silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, aluminum oxide, aluminum oxynitride, aluminum nitride oxide, aluminum nitride, or the like is used. I just need.
  • silicon oxynitride refers to a material having a higher content of oxygen than nitrogen as its composition
  • silicon nitride oxide refers to a material having a higher content of nitrogen than oxygen as its composition. Is shown.
  • aluminum oxynitride refers to a material having a higher oxygen content than nitrogen as its composition
  • aluminum nitride oxide refers to a material having a higher nitrogen content than oxygen as its composition. Is shown.
  • the insulator 322 may have a function as a flattening film for flattening a step formed by the transistor 300 and the like provided thereunder.
  • the upper surface of the insulator 322 may be planarized by a planarization process using a chemical mechanical polishing (CMP) method or the like to improve planarity.
  • CMP chemical mechanical polishing
  • the insulator 324 a film having a barrier property such that hydrogen or an impurity is not diffused in a region where the transistor 500 is provided from the substrate 311 or the transistor 300 or the like.
  • a film having a barrier property against hydrogen for example, silicon nitride formed by a CVD method can be used.
  • silicon nitride formed by a CVD method when hydrogen diffuses into a semiconductor element including an oxide semiconductor such as the transistor 500, the characteristics of the semiconductor element may be reduced. Therefore, a film which suppresses diffusion of hydrogen is preferably used between the transistor 500 and the transistor 300.
  • the film that suppresses the diffusion of hydrogen is a film from which the amount of desorbed hydrogen is small.
  • the amount of desorbed hydrogen can be analyzed using, for example, a thermal desorption gas analysis (TDS).
  • TDS thermal desorption gas analysis
  • the amount of desorbed hydrogen in the insulator 324 is calculated as the number of desorbed hydrogen atoms per area of the insulator 324 Therefore, it may be 10 ⁇ 10 15 atoms / cm 2 or less, preferably 5 ⁇ 10 15 atoms / cm 2 or less.
  • the insulator 326 preferably has a lower dielectric constant than the insulator 324.
  • the relative permittivity of the insulator 326 is preferably less than 4, and more preferably less than 3.
  • the relative dielectric constant of the insulator 326 is preferably 0.7 times or less, more preferably 0.6 times or less, of the relative permittivity of the insulator 324.
  • the conductor 328 connected to the capacitor 600 or the transistor 500, the conductor 330, or the like is embedded.
  • the conductor 328 and the conductor 330 have a function as a plug or a wiring.
  • the same reference numeral is given to a plurality of structures collectively for a conductor having a function as a plug or a wiring.
  • a wiring and a plug connected to the wiring may be integrated. That is, a part of the conductor functions as a wiring and a part of the conductor functions as a plug in some cases.
  • a conductive material such as a metal material, an alloy material, a metal nitride material, or a metal oxide material is used in a single layer or a stacked layer. be able to. It is preferable to use a high melting point material such as tungsten or molybdenum, which has both heat resistance and conductivity, and it is preferable to use tungsten. Alternatively, it is preferable to use a low-resistance conductive material such as aluminum or copper. By using a low-resistance conductive material, wiring resistance can be reduced.
  • a wiring layer may be provided over the insulator 326 and the conductor 330.
  • an insulator 350, an insulator 352, and an insulator 354 are sequentially stacked.
  • a conductor 356 is formed over the insulator 350, the insulator 352, and the insulator 354.
  • the conductor 356 functions as a plug connected to the transistor 300 or a wiring. Note that the conductor 356 can be provided using the same material as the conductor 328 and the conductor 330.
  • an insulator having a barrier property to hydrogen is preferably used, like the insulator 324.
  • the conductor 356 preferably includes a conductor having a barrier property to hydrogen.
  • a conductor having a barrier property against hydrogen is formed in an opening portion of the insulator 350 having a barrier property against hydrogen.
  • the conductor having a barrier property against hydrogen for example, tantalum nitride or the like may be used.
  • tantalum nitride and tungsten having high conductivity diffusion of hydrogen from the transistor 300 can be suppressed while the conductivity as a wiring is maintained.
  • the tantalum nitride layer having a barrier property against hydrogen be in contact with the insulator 350 having a barrier property against hydrogen.
  • a wiring layer may be provided over the insulator 354 and the conductor 356.
  • an insulator 360, an insulator 362, and an insulator 364 are sequentially stacked.
  • a conductor 366 is formed over the insulator 360, the insulator 362, and the insulator 364.
  • the conductor 366 has a function as a plug or a wiring. Note that the conductor 366 can be provided using a material similar to that of the conductor 328 and the conductor 330.
  • an insulator having a barrier property to hydrogen is preferably used, like the insulator 324.
  • the conductor 366 preferably includes a conductor having a barrier property to hydrogen.
  • a conductor having a barrier property against hydrogen is formed in an opening portion of the insulator 360 having a barrier property against hydrogen.
  • a wiring layer may be provided over the insulator 364 and the conductor 366.
  • an insulator 370, an insulator 372, and an insulator 374 are sequentially stacked.
  • a conductor 376 is formed over the insulator 370, the insulator 372, and the insulator 374.
  • the conductor 376 has a function as a plug or a wiring. Note that the conductor 376 can be provided using a material similar to that of the conductor 328 and the conductor 330.
  • an insulator having a barrier property to hydrogen is preferably used, like the insulator 324.
  • the conductor 376 preferably includes a conductor having a barrier property to hydrogen.
  • a conductor having a barrier property against hydrogen is formed in an opening portion of the insulator 370 having a barrier property against hydrogen.
  • a wiring layer may be provided over the insulator 374 and the conductor 376.
  • an insulator 380, an insulator 382, and an insulator 384 are sequentially stacked.
  • a conductor 386 is formed over the insulator 380, the insulator 382, and the insulator 384.
  • the conductor 386 has a function as a plug or a wiring. Note that the conductor 386 can be provided using a material similar to that of the conductor 328 and the conductor 330.
  • an insulator having a barrier property to hydrogen is preferably used, like the insulator 324.
  • the conductor 386 preferably includes a conductor having a barrier property to hydrogen.
  • a conductor having a barrier property against hydrogen is formed in an opening portion of the insulator 380 having a barrier property against hydrogen.
  • the wiring layer including the conductor 356, the wiring layer including the conductor 366, the wiring layer including the conductor 376, and the wiring layer including the conductor 386 have been described. However, it is not limited to this.
  • the number of wiring layers similar to the wiring layer including the conductor 356 may be three or less, or the number of wiring layers similar to the wiring layer including the conductor 356 may be five or more.
  • an insulator 510, an insulator 512, an insulator 514, and an insulator 516 are sequentially stacked. It is preferable that any of the insulator 510, the insulator 512, the insulator 514, and the insulator 516 be formed using a substance having a barrier property to oxygen and hydrogen.
  • a film having a barrier property such that hydrogen or an impurity is not diffused from a region where the substrate 311 or the region where the transistor 300 is provided to a region where the transistor 500 is provided is used. Is preferred. Therefore, a material similar to that of the insulator 324 can be used.
  • a film having a barrier property to hydrogen silicon nitride formed by a CVD method can be used.
  • a film which suppresses diffusion of hydrogen is preferably used between the transistor 500 and the transistor 300.
  • the film that suppresses the diffusion of hydrogen is a film from which the amount of desorbed hydrogen is small.
  • a metal oxide such as aluminum oxide, hafnium oxide, or tantalum oxide is preferably used for the insulator 510 and the insulator 514.
  • aluminum oxide has a high effect of blocking both oxygen and impurities such as hydrogen and moisture which may cause a change in electric characteristics of a transistor, preventing the film from permeating. Therefore, the aluminum oxide can prevent impurities such as hydrogen and moisture from entering the transistor 500 during and after the manufacturing process of the transistor. Further, release of oxygen from an oxide included in the transistor 500 can be suppressed. Therefore, it is suitable for use as a protective film for the transistor 500.
  • the same material as the insulator 320 can be used for the insulator 512 and the insulator 516.
  • a material having a relatively low dielectric constant can be used as the insulators 512 and 516.
  • a conductor 518 In the insulator 510, the insulator 512, the insulator 514, and the insulator 516, a conductor 518, a conductor (eg, the conductor 503) included in the transistor 500, or the like is embedded. Note that the conductor 518 has a function as a plug or a wiring connected to the capacitor 600 or the transistor 300.
  • the conductor 518 can be provided using the same material as the conductor 328 and the conductor 330.
  • the conductor 518 in a region in contact with the insulator 510 and the insulator 514 is preferably a conductor having a barrier property to oxygen, hydrogen, and water.
  • the transistor 300 and the transistor 500 can be separated from each other with a layer having a barrier property to oxygen, hydrogen, and water, so that diffusion of hydrogen from the transistor 300 to the transistor 500 can be suppressed.
  • the transistor 500 is provided above the insulator 516.
  • the transistor 500 includes a conductor 503 which is arranged to be embedded in the insulator 514 and the insulator 516, and an insulator 520 which is arranged over the insulator 516 and the conductor 503.
  • An insulator 522 disposed over the insulator 520; an insulator 524 disposed over the insulator 522; an oxide 530a disposed over the insulator 524;
  • the oxide 530b is provided; the conductors 542a and 542b are provided separately from each other over the oxide 530b; and the conductor 542a and the conductor 542b are provided over the oxide 530b.
  • An insulator 580 in which an opening is formed so as to overlap, an oxide 530c arranged on the bottom and side surfaces of the opening, and an insulator 55 arranged on a surface where the oxide 530c is formed When having a conductor 560 disposed on the forming surface of the insulator 550, a.
  • an insulator 544 is preferably provided between the insulator 580 and the oxide 530a, the oxide 530b, the conductor 542a, and the conductor 542b.
  • the conductor 560 includes a conductor 560a provided inside the insulator 550 and a conductor 560b provided so as to be embedded inside the conductor 560a. It is preferred to have. 13A and 13B, the insulator 574 is preferably provided over the insulator 580, the conductor 560, and the insulator 550.
  • oxide 530a the oxide 530b, and the oxide 530c may be collectively referred to as an oxide 530.
  • the transistor 500 a structure in which three layers of an oxide 530a, an oxide 530b, and an oxide 530c are stacked in a region where a channel is formed and in the vicinity thereof is shown; however, the present invention is not limited thereto. Not something. For example, a single layer of the oxide 530b, a two-layer structure of the oxide 530b and the oxide 530a, a two-layer structure of the oxide 530b and the oxide 530c, or a stacked structure of four or more layers may be provided. In the transistor 500, the conductor 560 is illustrated as having a two-layer structure, but the present invention is not limited to this.
  • the conductor 560 may have a single-layer structure or a stacked structure of three or more layers.
  • the transistor 500 illustrated in FIGS. 11 and 13A and the like is an example, and there is no limitation on the structure, and an appropriate transistor may be used depending on a circuit configuration and a driving method.
  • the conductor 560 functions as a gate electrode of the transistor, and the conductor 542a and the conductor 542b each function as a source electrode or a drain electrode.
  • the conductor 560 is formed so as to be embedded in the opening of the insulator 580 and the region between the conductors 542a and 542b.
  • the arrangement of the conductor 560, the conductor 542a, and the conductor 542b is selected in a self-aligned manner with respect to the opening of the insulator 580. That is, in the transistor 500, the gate electrode can be arranged between the source electrode and the drain electrode in a self-aligned manner.
  • the conductor 560 can be formed without providing a positioning margin, so that the area occupied by the transistor 500 can be reduced.
  • miniaturization and high integration of the semiconductor device can be achieved.
  • the conductor 560 Since the conductor 560 is formed in a self-aligned manner in a region between the conductor 542a and the conductor 542b, the conductor 560 does not have a region overlapping with the conductor 542a or the conductor 542b. Accordingly, parasitic capacitance formed between the conductor 560 and the conductors 542a and 542b can be reduced. Thus, the switching speed of the transistor 500 can be improved and high frequency characteristics can be provided.
  • the conductor 560 may function as a first gate (also referred to as a top gate) electrode in some cases.
  • the conductor 503 functions as a second gate (also referred to as a bottom gate) electrode.
  • the threshold voltage of the transistor 500 can be controlled by changing the potential applied to the conductor 503 independently of the potential applied to the conductor 560 without interlocking with the potential.
  • the threshold voltage of the transistor 500 can be higher than 0 V and the off-state current can be reduced. Therefore, when a negative potential is applied to the conductor 503, the drain current when the potential applied to the conductor 560 is 0 V can be smaller than when no potential is applied.
  • the conductor 503 is provided so as to overlap with the oxide 530 and the conductor 560.
  • a potential is applied to the conductor 560 and the conductor 503, an electric field generated from the conductor 560 and an electric field generated from the conductor 503 are connected to each other, so that a channel formation region formed in the oxide 530 is covered.
  • a structure of a transistor which electrically surrounds a channel formation region by an electric field of the first gate electrode and the electric field of the second gate electrode is referred to as a surrounded round-channel (S-channel) structure.
  • the conductor 503 has the same structure as the conductor 518.
  • the conductor 503a is formed in contact with the inner walls of the openings of the insulator 514 and the insulator 516, and the conductor 503b is formed inside.
  • the transistor 500 has a structure in which the conductor 503a and the conductor 503b are stacked, the present invention is not limited to this.
  • the conductor 503 may have a single-layer structure or a stacked structure of three or more layers.
  • the conductor 503a be formed using a conductive material having a function of suppressing diffusion of impurities such as hydrogen atoms, hydrogen molecules, water molecules, and copper atoms (the impurities are hardly transmitted).
  • a conductive material having a function of suppressing diffusion of oxygen for example, at least one of oxygen atoms and oxygen molecules
  • the function of suppressing the diffusion of an impurity or oxygen means a function of suppressing the diffusion of any one or all of the impurity or the oxygen.
  • the conductor 503a has a function of suppressing diffusion of oxygen, so that a decrease in conductivity due to oxidation of the conductor 503b can be suppressed.
  • the conductor 503b is preferably formed using a highly conductive conductive material containing tungsten, copper, or aluminum as a main component. In that case, the conductor 505 is not necessarily provided. Although the conductor 503b is illustrated as a single layer, the conductor 503b may have a stacked structure, for example, a stacked structure of titanium or titanium nitride and the above conductive material.
  • the insulator 520, the insulator 522, the insulator 524, and the insulator 550 each have a function as a second gate insulating film.
  • an insulator containing more oxygen than oxygen that satisfies the stoichiometric composition is preferably used as the insulator 524 in contact with the oxide 530. That is, it is preferable that an excess oxygen region be formed in the insulator 524. By providing such an insulator containing excess oxygen in contact with the oxide 530, oxygen vacancies in the oxide 530 can be reduced and the reliability of the transistor 500 can be improved.
  • an oxide material from which part of oxygen is released by heating as the insulator having an excess oxygen region.
  • An oxide from which oxygen is released by heating means that the amount of oxygen released as oxygen atoms by TDS (Thermal Desorption Spectroscopy) analysis is 1.0 ⁇ 10 18 atoms / cm 3 or more, preferably 1 ⁇ 10 18 atoms / cm 3 or more. .0 ⁇ 10 19 atoms / cm 3 or more, more preferably 2.0 ⁇ 10 19 atoms / cm 3 or more, or 3.0 ⁇ is 10 20 atoms / cm 3 or more at which the oxide film.
  • the surface temperature of the film at the time of the TDS analysis is preferably in the range of 100 ° C to 700 ° C, or 100 ° C to 400 ° C.
  • the insulator 522 preferably has a function of suppressing diffusion of oxygen (for example, an oxygen atom or an oxygen molecule) (the oxygen is hardly transmitted).
  • the insulator 522 has a function of suppressing diffusion of oxygen and impurities, oxygen included in the oxide 530 does not diffuse to the insulator 520, which is preferable.
  • the conductor 503 can be prevented from reacting with oxygen included in the insulator 524 and the oxide 530.
  • the insulator 522 is formed using, for example, aluminum oxide, hafnium oxide, an oxide containing aluminum and hafnium (hafnium aluminate), tantalum oxide, zirconium oxide, lead zirconate titanate (PZT), strontium titanate (SrTiO 3 ), or It is preferable to use an insulator containing a so-called high-k material such as (Ba, Sr) TiO 3 (BST) in a single layer or a stacked layer.
  • a problem such as a leak current may occur due to a reduction in thickness of a gate insulating film.
  • a high-k material for an insulator functioning as a gate insulating film reduction in gate potential at the time of transistor operation can be performed while the physical thickness is maintained.
  • an insulator containing one or both oxides of aluminum and hafnium which is an insulating material having a function of suppressing diffusion of impurities and oxygen (the above oxygen is difficult to transmit), is preferably used. It is preferable to use aluminum oxide, hafnium oxide, an oxide containing aluminum and hafnium (hafnium aluminate), or the like as the insulator containing one or both oxides of aluminum and hafnium. In the case where the insulator 522 is formed using such a material, the insulator 522 suppresses release of oxygen from the oxide 530 and entry of impurities such as hydrogen from the periphery of the transistor 500 into the oxide 530. Functions as a layer.
  • these insulators for example, aluminum oxide, bismuth oxide, germanium oxide, niobium oxide, silicon oxide, titanium oxide, tungsten oxide, yttrium oxide, or zirconium oxide may be added.
  • these insulators may be nitrided. Silicon oxide, silicon oxynitride, or silicon nitride may be stacked over the above insulator.
  • the insulator 520 be thermally stable.
  • silicon oxide and silicon oxynitride are preferable because they are thermally stable.
  • an insulator of a high-k material with silicon oxide or silicon oxynitride, an insulator 520 or an insulator 526 having a stacked structure that is thermally stable and has a high relative dielectric constant can be obtained.
  • the insulator 520, the insulator 522, and the insulator 524 are illustrated as the second gate insulating film having a three-layer structure.
  • the insulating film may have a single-layer, two-layer, or a stacked structure of four or more layers. In that case, the structure is not limited to a laminated structure made of the same material, and may be a laminated structure made of different materials.
  • a metal oxide functioning as an oxide semiconductor is preferably used for the oxide 530 including a channel formation region.
  • an In-M-Zn oxide (element M is aluminum, gallium, yttrium, copper, vanadium, beryllium, boron, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, or neodymium , Or one or more selected from hafnium, tantalum, tungsten, magnesium, and the like.
  • an In-M-Zn oxide which can be used as the oxide 530, CAAC (c ⁇ ) having c-axis orientation, a plurality of nanocrystals connected in the ab plane direction, and a strained crystal structure is provided. It is preferably an axis-aligned crystalline-OS (oxide-semiconductor) or a CAC (cloud-aligned compound) -OS. Further, as the oxide 530, an In—Ga oxide or an In—Zn oxide may be used.
  • the metal oxide functioning as a channel formation region in the oxide 530 preferably has a band gap of 2 eV or more, preferably 2.5 eV or more.
  • the oxide 530 includes the oxide 530a below the oxide 530b, diffusion of impurities from a structure formed below the oxide 530a to the oxide 530b can be suppressed.
  • the oxide 530c is provided over the oxide 530b, diffusion of impurities from a structure formed above the oxide 530c to the oxide 530b can be suppressed.
  • the oxide 530 preferably has a stacked structure of oxides in which the atomic ratio of each metal atom is different. Specifically, in the metal oxide used for the oxide 530a, the atomic ratio of the element M in the constituent elements is larger than that in the metal oxide used for the oxide 530b. Is preferred. In the metal oxide used for the oxide 530a, the atomic ratio of the element M to In is preferably larger than that in the metal oxide used for the oxide 530b. In the metal oxide used for the oxide 530b, the atomic ratio of In to the element M is preferably larger than that in the metal oxide used for the oxide 530a. Further, as the oxide 530c, a metal oxide which can be used for the oxide 530a or the oxide 530b can be used.
  • the energy of the bottom of the conduction band of the oxide 530a and the oxide 530c be higher than the energy of the bottom of the conduction band of the oxide 530b.
  • the electron affinity of the oxide 530a and the oxide 530c be smaller than the electron affinity of the oxide 530b.
  • the energy level at the bottom of the conduction band changes gently.
  • the energy level at the bottom of the conduction band at the junction of the oxide 530a, the oxide 530b, and the oxide 530c can be said to be continuously changed or continuously joined.
  • the defect state density of a mixed layer formed at the interface between the oxide 530a and the oxide 530b and the interface between the oxide 530b and the oxide 530c may be reduced.
  • the oxide 530a and the oxide 530b and the oxide 530b and the oxide 530c each have a common element other than oxygen (as a main component), so that a mixed layer having a low density of defect states is formed.
  • the oxide 530b is an In-Ga-Zn oxide
  • an In-Ga-Zn oxide, a Ga-Zn oxide, gallium oxide, or the like may be used as the oxide 530a and the oxide 530c.
  • the main path of the carriers is the oxide 530b.
  • the density of defect states at the interface between the oxide 530a and the oxide 530b and the interface between the oxide 530b and the oxide 530c can be reduced. Therefore, influence of carrier scattering due to interface scattering is small, and the transistor 500 can have high on-state current.
  • a conductor 542a and a conductor 542b functioning as a source electrode and a drain electrode are provided over the oxide 530b.
  • Examples of the conductor 542a and the conductor 542b include aluminum, chromium, copper, silver, gold, platinum, tantalum, nickel, titanium, molybdenum, tungsten, hafnium, vanadium, niobium, manganese, magnesium, zirconium, beryllium, indium, and ruthenium. It is preferable to use a metal element selected from iridium, strontium, and lanthanum, an alloy containing the above-described metal element as a component, an alloy in which the above-described metal elements are combined, or the like.
  • tantalum nitride, titanium nitride, tungsten, a nitride containing titanium and aluminum, a nitride containing tantalum and aluminum, ruthenium oxide, ruthenium nitride, an oxide containing strontium and ruthenium, an oxide containing lanthanum and nickel, and the like are used. Is preferred.
  • tantalum nitride, titanium nitride, nitride containing titanium and aluminum, nitride containing tantalum and aluminum, ruthenium oxide, ruthenium nitride, oxide containing strontium and ruthenium, and oxide containing lanthanum and nickel are not easily oxidized.
  • a conductive material or a material that maintains conductivity even when oxygen is absorbed is preferable.
  • a metal nitride film such as tantalum nitride is preferable because it has a barrier property against hydrogen or oxygen.
  • the conductor 542a and the conductor 542b are illustrated as having a single-layer structure, but may have a stacked structure of two or more layers.
  • a tantalum nitride film and a tungsten film may be stacked.
  • a titanium film and an aluminum film may be stacked.
  • a two-layer structure in which an aluminum film is stacked on a tungsten film a two-layer structure in which a copper film is stacked on a copper-magnesium-aluminum alloy film, a two-layer structure in which a copper film is stacked on a titanium film, and A two-layer structure in which copper films are stacked may be employed.
  • a titanium film or a titanium nitride film a three-layer structure in which an aluminum film or a copper film is stacked over the titanium film or the titanium nitride film, and a titanium film or a titanium nitride film is further formed thereon, a molybdenum film or
  • a molybdenum film or a three-layer structure in which a molybdenum nitride film, an aluminum film or a copper film are stacked over the molybdenum film or the molybdenum nitride film, and a molybdenum film or a molybdenum nitride film is further formed thereover.
  • a transparent conductive material containing indium oxide, tin oxide, or zinc oxide may be used.
  • a region 543a and a region 543b are formed as low-resistance regions in the oxide 530 at an interface with the conductor 542a (the conductor 542b) and in the vicinity thereof.
  • the region 543a functions as one of the source region and the drain region
  • the region 543b functions as the other of the source region and the drain region.
  • a channel formation region is formed in a region between the region 543a and the region 543b.
  • the oxygen concentration in the region 543a (region 543b) may be reduced in some cases. Further, in some cases, a metal compound layer containing a metal contained in the conductor 542a (the conductor 542b) and a component of the oxide 530 is formed in the region 543a (the region 543b). In such a case, the carrier density of the region 543a (region 543b) increases, and the region 543a (region 543b) becomes a low-resistance region.
  • the insulator 544 is provided so as to cover the conductor 542a and the conductor 542b, and suppresses oxidation of the conductor 542a and the conductor 542b. At this time, the insulator 544 may be provided so as to cover a side surface of the oxide 530 and be in contact with the insulator 524.
  • insulator 544 a metal oxide containing one or two or more selected from hafnium, aluminum, gallium, yttrium, zirconium, tungsten, titanium, tantalum, nickel, germanium, neodymium, lanthanum, or magnesium is used. Can be used. Alternatively, as the insulator 544, silicon nitride oxide, silicon nitride, or the like can be used.
  • the insulator 544 aluminum oxide, an oxide containing hafnium oxide, aluminum, an oxide containing hafnium (hafnium aluminate), or the like, which is an insulator containing one or both oxides of aluminum and hafnium, is preferably used. .
  • hafnium aluminate has higher heat resistance than a hafnium oxide film. Therefore, crystallization is difficult in a heat treatment in a later step, which is preferable.
  • the insulator 544 is not an essential component in the case where the conductor 542a and the conductor 542b have a resistance to oxidation or do not significantly reduce conductivity even when oxygen is absorbed. An appropriate design may be made according to the required transistor characteristics.
  • the insulator 544 With the use of the insulator 544, diffusion of impurities such as water and hydrogen included in the insulator 580 to the oxide 530b through the oxide 530c and the insulator 550 can be suppressed. Further, oxidation of the conductor 560 due to excess oxygen included in the insulator 580 can be suppressed.
  • the insulator 550 functions as a first gate insulating film. It is preferable that the insulator 550 be provided in contact with the inside (the upper surface and the side surface) of the oxide 530c. It is preferable that the insulator 550 be formed using an insulator containing excess oxygen and releasing oxygen by heating, similarly to the insulator 524 described above.
  • silicon oxide containing excess oxygen, silicon oxynitride, silicon nitride oxide, silicon nitride, silicon oxide added with fluorine, silicon oxide added with carbon, silicon oxide added with carbon and nitrogen, and holes are formed.
  • Silicon oxide can be used.
  • silicon oxide and silicon oxynitride are preferable because they are stable against heat.
  • oxygen can be effectively supplied from the insulator 550 to the channel formation region of the oxide 530b through the oxide 530c. Can be supplied.
  • the concentration of impurities such as water or hydrogen in the insulator 550 is preferably reduced.
  • the thickness of the insulator 550 is preferably greater than or equal to 1 nm and less than or equal to 20 nm.
  • a metal oxide may be provided between the insulator 550 and the conductor 560 in order to efficiently supply excess oxygen included in the insulator 550 to the oxide 530.
  • the metal oxide preferably suppresses oxygen diffusion from the insulator 550 to the conductor 560.
  • diffusion of excess oxygen from the insulator 550 to the conductor 560 is suppressed. That is, a decrease in the amount of excess oxygen supplied to the oxide 530 can be suppressed. Further, oxidation of the conductor 560 due to excess oxygen can be suppressed.
  • a material that can be used for the insulator 544 may be used.
  • the insulator 550 may have a stacked structure, like the second gate insulating film.
  • a problem such as leakage current may occur due to thinning of a gate insulating film. Therefore, an insulator functioning as a gate insulating film is formed using a high-k material, By using a laminated structure with a material that is stable in nature, it is possible to reduce the gate potential at the time of transistor operation while maintaining the physical film thickness. Further, a laminated structure which is thermally stable and has a high relative dielectric constant can be obtained.
  • 13A and 13B illustrate the conductor 560 functioning as a first gate electrode as a two-layer structure; however, the conductor 560 may have a single-layer structure or a stacked structure of three or more layers.
  • Conductor 560a is a hydrogen atom, a hydrogen molecule, a water molecule, a nitrogen atom, a nitrogen molecule, nitric oxide molecule (N 2 O, NO, etc. NO 2), conductive having a function of suppressing the diffusion of impurities such as copper atoms It is preferable to use a material. Alternatively, it is preferable to use a conductive material having a function of suppressing diffusion of oxygen (for example, at least one of an oxygen atom and an oxygen molecule). When the conductor 560a has a function of suppressing diffusion of oxygen, it is possible to prevent the conductor 560b from being oxidized by oxygen contained in the insulator 550 to lower the conductivity.
  • the conductive material having a function of suppressing diffusion of oxygen for example, tantalum, tantalum nitride, ruthenium, ruthenium oxide, or the like is preferably used.
  • an oxide semiconductor that can be used for the oxide 530 can be used as the conductor 560a. In that case, by forming the conductor 560b by a sputtering method, the electric resistance of the conductor 560a can be reduced to be a conductor. This can be called an OC (Oxide Conductor) electrode.
  • the conductor 560b be formed using a conductive material mainly containing tungsten, copper, or aluminum.
  • a conductor with high conductivity is preferably used.
  • a conductive material containing tungsten, copper, or aluminum as a main component can be used.
  • the conductor 560b may have a stacked structure, for example, a stacked structure of titanium, titanium nitride, and the above conductive material.
  • the insulator 580 is provided over the conductor 542a and the conductor 542b with the insulator 544 interposed therebetween.
  • the insulator 580 preferably has an excess oxygen region.
  • silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, silicon oxide to which fluorine is added, silicon oxide to which carbon is added, silicon oxide to which carbon and nitrogen are added, or oxide having voids It is preferable to have silicon, resin, or the like.
  • silicon oxide and silicon oxynitride are preferable because they are thermally stable.
  • silicon oxide and silicon oxide having holes are preferable because an excess oxygen region can be easily formed in a later step.
  • the insulator 580 preferably has an excess oxygen region.
  • oxygen in the insulator 580 can be efficiently supplied to the oxide 530 through the oxide 530c.
  • concentration of impurities such as water or hydrogen in the insulator 580 is preferably reduced.
  • the opening of the insulator 580 is formed so as to overlap with a region between the conductor 542a and the conductor 542b. Accordingly, the conductor 560 is formed so as to be embedded in the opening of the insulator 580 and the region between the conductors 542a and 542b.
  • the conductor 560 can have a shape with a high aspect ratio.
  • the conductor 560 since the conductor 560 is provided so as to be embedded in the opening of the insulator 580, the conductor 560 can be formed without being collapsed during a process even when the conductor 560 has a high aspect ratio. Can be.
  • the insulator 574 is preferably provided in contact with the upper surface of the insulator 580, the upper surface of the conductor 560, and the upper surface of the insulator 550.
  • an excess oxygen region can be provided in the insulator 550 and the insulator 580.
  • oxygen can be supplied into the oxide 530 from the excess oxygen region.
  • a metal oxide containing one or two or more kinds selected from hafnium, aluminum, gallium, yttrium, zirconium, tungsten, titanium, tantalum, nickel, germanium, or magnesium is used as the insulator 574.
  • a metal oxide containing one or two or more kinds selected from hafnium, aluminum, gallium, yttrium, zirconium, tungsten, titanium, tantalum, nickel, germanium, or magnesium is used as the insulator 574.
  • hafnium, aluminum, gallium, yttrium, zirconium, tungsten, titanium, tantalum, nickel, germanium, or magnesium is used as the insulator 574.
  • aluminum oxide has high barrier properties and can suppress diffusion of hydrogen and nitrogen even in a thin film having a thickness of 0.5 nm or more and 3.0 nm or less. Therefore, aluminum oxide formed by a sputtering method can serve as an oxygen supply source and also have a function as a barrier film for impurities such as hydrogen.
  • the insulator 581 functioning as an interlayer film be provided over the insulator 574.
  • the insulator 581 preferably has a reduced concentration of impurities such as water or hydrogen in the film, similarly to the insulator 524 and the like.
  • the conductors 540a and 540b are provided in openings formed in the insulator 581, the insulator 574, the insulator 580, and the insulator 544.
  • the conductor 540a and the conductor 540b are provided to face each other with the conductor 560 interposed therebetween.
  • the conductor 540a and the conductor 540b have the same configuration as the conductor 546 and the conductor 548 described later.
  • An insulator 582 is provided over the insulator 581. It is preferable that the insulator 582 be formed using a substance having a barrier property to oxygen and hydrogen. Therefore, the same material as the insulator 514 can be used for the insulator 582. For example, for the insulator 582, a metal oxide such as aluminum oxide, hafnium oxide, or tantalum oxide is preferably used.
  • aluminum oxide has a high effect of blocking both oxygen and impurities such as hydrogen and moisture which may cause a change in electric characteristics of a transistor, preventing the film from permeating. Therefore, the aluminum oxide can prevent impurities such as hydrogen and moisture from entering the transistor 500 during and after the manufacturing process of the transistor. Further, release of oxygen from an oxide included in the transistor 500 can be suppressed. Therefore, it is suitable for use as a protective film for the transistor 500.
  • An insulator 586 is provided over the insulator 582.
  • a material similar to that of the insulator 320 can be used.
  • parasitic capacitance generated between wirings can be reduced.
  • a silicon oxide film, a silicon oxynitride film, or the like can be used as the insulator 586.
  • the insulator 520, the insulator 522, the insulator 524, the insulator 544, the insulator 580, the insulator 574, the insulator 581, the insulator 582, and the insulator 586 include a conductor 546, a conductor 548, and the like. Is embedded.
  • the conductor 546 and the conductor 548 each have a function as a plug or a wiring connected to the capacitor 600, the transistor 500, or the transistor 300.
  • the conductor 546 and the conductor 548 can be provided using the same material as the conductor 328 and the conductor 330.
  • the capacitor 600 includes a conductor 610, a conductor 620, and an insulator 630.
  • the conductor 612 may be provided over the conductor 546 and the conductor 548.
  • the conductor 612 functions as a plug connected to the transistor 500 or a wiring.
  • the conductor 610 has a function as an electrode of the capacitor 600. Note that the conductor 612 and the conductor 610 can be formed at the same time.
  • the conductor 612 and the conductor 610 each include a metal film containing an element selected from molybdenum, titanium, tantalum, tungsten, aluminum, copper, chromium, neodymium, and scandium, or a metal nitride film containing any of the above elements.
  • a metal film containing an element selected from molybdenum, titanium, tantalum, tungsten, aluminum, copper, chromium, neodymium, and scandium or a metal nitride film containing any of the above elements.
  • a tantalum nitride film, a titanium nitride film, a molybdenum nitride film, a tungsten nitride film or the like can be used.
  • indium tin oxide, indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium zinc oxide, and silicon oxide are added.
  • a conductive material such as indium tin oxide may be used.
  • the conductor 612 and the conductor 610 have a single-layer structure; however, the structure is not limited to this, and a stacked structure of two or more layers may be employed.
  • a conductor having a barrier property and a conductor having high adhesion to a conductor having a high conductivity may be formed between a conductor having a barrier property and a conductor having a high conductivity.
  • the conductor 620 is provided so as to overlap with the conductor 610 with the insulator 630 interposed therebetween.
  • the conductor 620 can be formed using a conductive material such as a metal material, an alloy material, or a metal oxide material. It is preferable to use a high melting point material such as tungsten or molybdenum, which has both heat resistance and conductivity, and it is particularly preferable to use tungsten.
  • a low-resistance metal material such as Cu (copper) or Al (aluminum) may be used.
  • An insulator 640 is provided over the conductor 620 and the insulator 630.
  • the insulator 640 can be provided using a material similar to that of the insulator 320. Further, the insulator 640 may function as a flattening film that covers the uneven shape below the insulator 640.
  • FIG. 14A describes an example in which the battery control circuit is an electronic component as described in the above embodiment.
  • the electronic component is also referred to as a semiconductor package or an IC package.
  • This electronic component has a plurality of standards and names according to the terminal take-out direction and the terminal shape. Therefore, in the present embodiment, an example will be described.
  • a circuit portion composed of an OS transistor or a Si transistor is completed by assembling a plurality of detachable components on a printed board through an assembling process (post-process).
  • the post-process can be completed through the processes shown in FIG. 14A. Specifically, after the element substrate obtained in the previous process is completed (Step S1), the back surface of the substrate is ground (Step S2). By thinning the substrate at this stage, the warpage of the substrate in the previous process is reduced, and the size of the component is reduced.
  • ⁇ ⁇ Perform a dicing step of grinding the back surface of the substrate and separating the substrate into a plurality of chips. Then, a die bonding step is performed in which the separated chips are individually picked up, mounted on a lead frame and bonded (step S3).
  • a suitable method such as bonding with a resin or bonding with a tape is appropriately selected according to the product.
  • the die bonding step may be performed by mounting on an interposer.
  • wire bonding is performed to electrically connect the leads of the lead frame and the electrodes on the chip with thin metal wires (wires) (step S4).
  • a silver wire or a gold wire can be used as the thin metal wire.
  • ball bonding or wedge bonding can be used for wire bonding.
  • step S5 The wire-bonded chip is subjected to a molding step of sealing it with an epoxy resin or the like.
  • the inside of the electronic component is filled with resin, which can reduce damage to the built-in circuit portions and wires due to mechanical external force, and reduce deterioration of characteristics due to moisture and dust. it can.
  • step S6 the lead of the lead frame is plated. Then, the lead is cut and formed (step S6). This plating prevents the leads from rusting, and allows for more reliable soldering when subsequently mounted on a printed circuit board.
  • step S7 a printing process (marking) is performed on the surface of the package (step S7). Then, through a final inspection step (step S8), an electronic component having a circuit section including the PLD is completed (step S9).
  • FIG. 14B is a schematic perspective view of the completed electronic component.
  • FIG. 14B is a schematic perspective view of a QFP (Quad Flat Package) as an example of the electronic component.
  • the electronic component 700 shown in FIG. 14B shows the leads 701 and the circuit portion 703.
  • the electronic component 700 illustrated in FIG. 14B is mounted on, for example, a printed board 702. By combining a plurality of such electronic components 700 and electrically connecting them on the printed circuit board 702, the electronic components can be mounted inside the electronic device.
  • the completed circuit board 704 is provided inside an electronic device or the like.
  • the cylindrical secondary battery 400 has a positive electrode cap (battery lid) 401 on the upper surface and a battery can (exterior can) 402 on the side and bottom surfaces.
  • the positive electrode cap 401 and the battery can (exterior can) 402 are insulated by a gasket (insulating packing) 410.
  • FIG. 15B is a diagram schematically showing a cross section of a cylindrical secondary battery 400.
  • the cylindrical secondary battery 400 has a positive electrode cap (battery lid) 401 on the upper surface, and a battery can (exterior can) 402 on the side and bottom surfaces.
  • the positive electrode cap and the battery can (outer can) 402 are insulated by a gasket (insulating packing) 410.
  • a battery element in which a band-shaped positive electrode 604 and a negative electrode 606 are wound with a separator 605 interposed therebetween is provided inside the hollow cylindrical battery can 402.
  • the battery element is wound around the center pin.
  • the battery can 402 has one end closed and the other end open.
  • a metal such as nickel, aluminum, or titanium having corrosion resistance to an electrolytic solution, an alloy thereof, or an alloy of these and another metal (for example, stainless steel) can be used. .
  • the battery element in which the positive electrode, the negative electrode, and the separator are wound is sandwiched between a pair of opposed insulating plates 608 and 609.
  • a nonaqueous electrolyte (not shown) is injected into the inside of the battery can 402 provided with the battery element.
  • the non-aqueous electrolyte the same one as used in the coin-type secondary battery can be used.
  • the positive electrode 604 is connected to a positive terminal (positive current collecting lead) 603, and the negative electrode 606 is connected to a negative terminal (negative current collecting lead) 607.
  • a metal material such as aluminum can be used.
  • the positive terminal 603 is resistance-welded to the safety valve mechanism 412, and the negative terminal 607 is resistance-welded to the bottom of the battery can 402.
  • the safety valve mechanism 412 is electrically connected to the positive electrode cap 401 via a PTC (Positive Temperature Coefficient) element 611.
  • the safety valve mechanism 412 disconnects the electrical connection between the positive electrode cap 401 and the positive electrode 604 when the internal pressure of the battery exceeds a predetermined threshold.
  • the PTC element 611 is a thermal resistance element whose resistance increases when the temperature rises. The PTC element 611 limits the amount of current by increasing the resistance to prevent abnormal heat generation.
  • barium titanate (BaTiO 3 ) -based semiconductor ceramics or the like can be used.
  • FIG. 15C illustrates an example of a power storage system 415.
  • the power storage system 415 has a plurality of secondary batteries 400.
  • the positive electrode of each secondary battery contacts and is electrically connected to the conductor 424 separated by the insulator 425.
  • the conductor 424 is electrically connected to the control circuit 420 through the wiring 423.
  • the negative electrode of each secondary battery is electrically connected to the control circuit 420 via the wiring 426.
  • the control circuit 420 the battery control circuit described in the above embodiment can be used.
  • FIG. 15D illustrates an example of a power storage system 415.
  • the power storage system 415 includes a plurality of secondary batteries 400, and the plurality of secondary batteries 400 are sandwiched between the conductive plates 413 and 414.
  • the plurality of secondary batteries 400 are electrically connected to the conductive plates 413 and 414 by the wiring 416.
  • the plurality of secondary batteries 400 may be connected in parallel, may be connected in series, or may be connected in series after being connected in parallel.
  • the battery cell 121 corresponds to a plurality of secondary batteries connected in parallel, and one cell balance circuit 130 is connected in parallel. It is electrically connected to a plurality of secondary batteries.
  • a temperature control device may be provided between the plurality of secondary batteries 400.
  • the secondary battery 400 When the secondary battery 400 is overheated, it can be cooled by the temperature controller, and when the secondary battery 400 is too cold, it can be heated by the temperature controller. Therefore, the performance of the power storage system 415 is less likely to be affected by the outside air temperature.
  • the power storage system 415 is electrically connected to the control circuit 420 through the wiring 421 and the wiring 422.
  • the control circuit 420 the battery control circuit described in the above embodiment can be used.
  • the wiring 421 is electrically connected to the positive electrodes of the plurality of secondary batteries 400 through the conductive plate 413
  • the wiring 422 is electrically connected to the negative electrodes of the plurality of secondary batteries 400 through the conductive plate 414.
  • FIG. 16A is a diagram showing the appearance of the secondary battery pack 531.
  • FIG. 16B is a diagram illustrating the configuration of the secondary battery pack 531.
  • the secondary battery pack 531 has a circuit board 501 and a secondary battery 513. A label 509 is attached to the secondary battery 513.
  • the circuit board 501 is fixed by a seal 515.
  • the secondary battery pack 531 has an antenna 517.
  • the circuit board 501 has the control circuit 590.
  • the control circuit 590 the battery control circuit described in the above embodiment can be used.
  • a control circuit 590 is provided on a circuit board 501.
  • the circuit board 501 is electrically connected to the terminal 511.
  • the circuit board 501 is electrically connected to the antenna 517, one of the positive and negative electrode leads 551 of the secondary battery 513, and the other of the positive and negative electrode leads 552.
  • a circuit system 590a provided on the circuit board 501 and a circuit system 590b electrically connected to the circuit board 501 via the terminal 511 may be provided.
  • part of the control circuit of one embodiment of the present invention is provided in the circuit system 590a, and another part of the control circuit of one embodiment of the present invention is provided in the circuit system 590b.
  • the antenna 517 is not limited to a coil shape, and may be, for example, a linear shape or a plate shape. Further, an antenna such as a planar antenna, an aperture antenna, a traveling wave antenna, an EH antenna, a magnetic field antenna, or a dielectric antenna may be used. Alternatively, the antenna 517 may be a flat conductor. This flat conductor can function as one of the electric field coupling conductors. That is, the antenna 517 may function as one of the two conductors of the capacitor. Thus, power can be exchanged not only by an electromagnetic field and a magnetic field but also by an electric field.
  • the secondary battery pack 531 has a layer 519 between the antenna 517 and the secondary battery 513.
  • the layer 519 has a function of shielding an electromagnetic field generated by the secondary battery 513, for example.
  • a magnetic substance can be used as the layer 519.
  • the secondary battery 513 may include a wound battery element.
  • the wound battery element is obtained by laminating a negative electrode and a positive electrode so as to overlap each other with a separator interposed therebetween, and winding the laminated sheet.
  • a next-generation clean energy vehicle such as a hybrid vehicle (HEV), an electric vehicle (EV), or a plug-in hybrid vehicle (PHEV) can be realized.
  • HEV hybrid vehicle
  • EV electric vehicle
  • PHEV plug-in hybrid vehicle
  • FIG. 17A, 17B, and 17C illustrate a vehicle using the power storage system of one embodiment of the present invention.
  • An automobile 8400 illustrated in FIG. 17A is an electric vehicle using an electric motor as a power source for traveling. Alternatively, it is a hybrid vehicle in which an electric motor and an engine can be appropriately selected and used as power sources for traveling. By using one embodiment of the present invention, a vehicle with a long cruising distance can be realized.
  • the car 8400 has a power storage system.
  • the power storage system can supply electric power to a light-emitting device such as a headlight 8401 or a room light (not illustrated), in addition to driving the electric motor 8406.
  • the power storage system can supply power to a display device such as a speedometer or a tachometer of the vehicle 8400. Further, the power storage system can supply power to a navigation system or the like included in the car 8400.
  • FIG. 17B can charge the power storage system 8024 included in the vehicle 8500 by receiving power supply from an external charging facility by a plug-in method, a contactless power supply method, or the like.
  • FIG. 17B shows a state where charging is performed via a cable 8022 from a ground-mounted charging device 8021 to a power storage system 8024 mounted on an automobile 8500.
  • the charging method, the standard of the connector, and the like may be appropriately performed by a predetermined method such as CHAdeMO (registered trademark) or a combo.
  • Charging device 8021 may be a charging station provided in a commercial facility or a home power supply.
  • the power storage system 8024 mounted on the automobile 8500 can be charged by external power supply using the plug-in technology. Charging can be performed by converting AC power into DC power via a conversion device such as an ACDC converter.
  • a power receiving device can be mounted on a vehicle, and power can be supplied from a ground power transmitting device in a non-contact manner and charged.
  • charging can be performed not only when the vehicle is stopped but also when the vehicle is traveling by incorporating a power transmission device on a road or an outer wall.
  • electric power may be transmitted and received between vehicles by using the non-contact power supply method.
  • a solar battery may be provided on the exterior of the vehicle to charge the power storage system when the vehicle stops or travels.
  • an electromagnetic induction system or a magnetic field resonance system can be used.
  • FIG. 17C illustrates an example of a two-wheeled vehicle using the power storage system of one embodiment of the present invention.
  • a scooter 8600 illustrated in FIG. 17C includes a power storage system 8602, a side mirror 8601, and a direction indicator 8603.
  • the power storage system 8602 can supply electricity to the direction indicator 8603.
  • scooter 8600 shown in FIG. 17C can store power storage system 8602 in under-seat storage 8604.
  • the power storage system 8602 can be stored in the under-seat storage 8604 even when the under-seat storage 8604 is small.
  • FIG. 18A illustrates an example of an electric bicycle including the power storage system of one embodiment of the present invention.
  • the power storage system of one embodiment of the present invention can be applied to the electric bicycle 8700 illustrated in FIG. 18A.
  • the power storage system of one embodiment of the present invention includes, for example, a plurality of storage batteries, a protection circuit, and a neural network.
  • the electric bicycle 8700 includes a power storage system 8702.
  • the power storage system 8702 can supply electricity to a motor that assists the driver.
  • the power storage system 8702 is portable, and FIG. 18B illustrates a state where the power storage system 8702 is removed from the bicycle.
  • the power storage system 8702 includes a plurality of storage batteries 8701 included in the power storage system of one embodiment of the present invention, and the display portion 8703 can display the remaining battery power and the like.
  • the power storage system 8702 includes a control circuit 8704 of one embodiment of the present invention.
  • the control circuit 8704 is electrically connected to the positive electrode and the negative electrode of the storage battery 8701. As the control circuit 8704, the battery control circuit described in the above embodiment can be used.
  • FIGS. 19A and 19B show an example of a tablet terminal that can be folded (including a clamshell terminal).
  • a tablet terminal 9600 illustrated in FIGS. 19A and 19B includes a housing 9630a, a housing 9630b, a movable portion 9640 which connects the housing 9630a to the housing 9630b, a display portion 9631, a display mode switch 9626, a power switch 9627, A power mode change switch 9625, a fastener 9629, and an operation switch 9628 are provided.
  • FIG. 19A shows a state in which the tablet terminal 9600 is opened
  • FIG. 19B shows a state in which the tablet terminal 9600 is closed.
  • the tablet terminal 9600 includes a power storage body 9635 in the housings 9630a and 9630b.
  • the power storage unit 9635 is provided over the housing 9630a and the housing 9630b through the movable portion 9640.
  • the display portion 9631 can be part of a touch panel region, and can input data by touching a displayed operation key.
  • a keyboard button can be displayed on the display portion 9631 by touching a position on the touch panel where a keyboard display switching button is displayed with a finger, a stylus, or the like.
  • the display mode changeover switch 9626 can change the display direction such as portrait display or landscape display, and can switch between monochrome display and color display.
  • the power saving mode changeover switch 9625 can optimize display brightness in accordance with the amount of external light during use detected by an optical sensor built in the tablet terminal 9600.
  • the tablet terminal may include not only an optical sensor but also other detection devices such as a sensor for detecting a tilt such as a gyro or an acceleration sensor.
  • FIG. 19B illustrates a closed state, in which the tablet terminal includes a housing 9630, a solar battery 9633, and a power storage system of one embodiment of the present invention.
  • the power storage system includes a control circuit 9634 and a power storage body 9635.
  • the control circuit 9634 the battery control circuit described in the above embodiment can be used.
  • the housing 9630a and the housing 9630b can be folded so as to overlap each other when not in use.
  • the display portion 9631 can be protected by folding, so that the durability of the tablet terminal 9600 can be increased.
  • the tablet terminal shown in FIGS. 19A and 19B has a function of displaying various information (such as a still image, a moving image, and a text image), and a function of displaying a calendar, date, time, or the like on a display unit.
  • various information such as a still image, a moving image, and a text image
  • a touch input function of touch input operation or editing of information displayed on the display unit a function of controlling processing by various software (programs), and the like.
  • ⁇ Power can be supplied to a touch panel, a display portion, a video signal processing portion, or the like with the solar cell 9633 attached to the surface of the tablet terminal.
  • the solar cell 9633 can be provided on one or both surfaces of the housing 9630, so that the power storage unit 9635 can be charged efficiently.
  • FIG. 19C illustrates a laptop personal computer 9601 provided with a display portion 9631 in a housing 9630a and a keyboard portion 9641 in a housing 9630b.
  • the laptop personal computer 9601 includes the control circuit 9634 and the power storage unit 9635 described with reference to FIGS. 19A and 19B.
  • the control circuit 9634 the battery control circuit described in the above embodiment can be used.
  • FIG. 20 shows an example of another electronic device.
  • a display device 8000 is an example of an electronic device in which the power storage system of one embodiment of the present invention is mounted.
  • the display device 8000 corresponds to a display device for receiving a TV broadcast, and includes a housing 8001, a display portion 8002, a speaker portion 8003, a secondary battery 8004, and the like.
  • the detection system according to one embodiment of the present invention is provided inside the housing 8001.
  • the display device 8000 can receive power from a commercial power supply or use power stored in the secondary battery 8004.
  • a display portion 8002 includes a light-emitting device having a light-emitting element such as a liquid crystal display device or an organic EL element in each pixel, an electrophoretic display device, a DMD (Digital Micromirror Device), a PDP (Plasma Display Panel), and a FED (Field Emission Display). ) Can be used.
  • a light-emitting element such as a liquid crystal display device or an organic EL element in each pixel
  • an electrophoretic display device such as a liquid crystal display device or an organic EL element in each pixel
  • DMD Digital Micromirror Device
  • PDP Plasma Display Panel
  • FED Field Emission Display
  • the voice input device 8005 also uses a secondary battery.
  • the voice input device 8005 includes the power storage system described in any of the above embodiments.
  • the voice input device 8005 has a plurality of sensors including a microphone (optical sensor, temperature sensor, humidity sensor, barometric pressure sensor, illuminance sensor, motion sensor, and the like) in addition to the wireless communication element, and uses a command from the user to perform other functions.
  • a power supply operation of a device for example, the display device 8000, a light amount adjustment of the lighting device 8100, and the like can be performed.
  • the voice input device 8005 can operate peripheral devices by voice and can be used instead of a manual remote controller.
  • the voice input device 8005 has wheels and mechanical moving means, moves in a direction in which the user's voice can be heard, accurately receives instructions with a built-in microphone, and displays the contents thereof on a display unit 8008. Or a touch input operation of the display portion 8008 can be performed.
  • the voice input device 8005 can also function as a charging dock for a portable information terminal 8009 such as a smartphone.
  • the portable information terminal 8009 and the voice input device 8005 can transmit and receive power by wire or wirelessly.
  • the portable information terminal 8009 does not need to be carried indoors, and it is necessary to secure the necessary capacity and avoid the load on the secondary battery from being deteriorated. It is desirable to be able to perform maintenance and the like.
  • the voice input device 8005 since the voice input device 8005 includes the speaker 8007 and the microphone, it is possible to have a hands-free conversation even when the portable information terminal 8009 is being charged. Further, when the capacity of the secondary battery of the voice input device 8005 is reduced, it is only necessary to move in the direction of the arrow and perform wireless charging from the charging module 8010 connected to the external power supply.
  • the voice input device 8005 may be mounted on a table. Further, the voice input device 8005 may be moved to a desired position by providing wheels or mechanical moving means, or the voice input device 8005 may be fixed at a desired position, for example, on the floor without providing a table or wheels. May be.
  • the display devices include all information display devices, such as those for personal computer and advertisement display, in addition to TV broadcast reception.
  • a stationary lighting device 8100 is an example of an electronic device using a secondary battery 8103 controlled by a microprocessor (including an APS) that controls charging.
  • the lighting device 8100 includes a housing 8101, a light source 8102, a secondary battery 8103, and the like.
  • FIG. 20 illustrates an example in which the secondary battery 8103 is provided inside the ceiling 8104 in which the housing 8101 and the light source 8102 are installed.
  • the secondary battery 8103 is provided inside the housing 8101. It may be.
  • the lighting device 8100 can receive power from a commercial power supply or can use power stored in the secondary battery 8103.
  • FIG. 20 illustrates the stationary lighting device 8100 provided in the ceiling 8104; however, the secondary battery 8103 is installed in a position other than the ceiling 8104, for example, on a side wall 8105, a floor 8106, a window 8107, or the like.
  • the lighting device can also be used for a desktop lighting device or the like.
  • an artificial light source that artificially obtains light using electric power can be used.
  • discharge lamps such as incandescent lamps and fluorescent lamps
  • light emitting elements such as LEDs and organic EL elements are examples of the artificial light source.
  • an air conditioner including an indoor unit 8200 and an outdoor unit 8204 is an example of an electronic device using a secondary battery 8203.
  • the indoor unit 8200 includes a housing 8201, an air outlet 8202, a secondary battery 8203, and the like.
  • FIG. 20 illustrates the case where the secondary battery 8203 is provided in the indoor unit 8200, but the secondary battery 8203 may be provided in the outdoor unit 8204. Alternatively, the secondary battery 8203 may be provided in both the indoor unit 8200 and the outdoor unit 8204.
  • the air conditioner can receive power from a commercial power supply or use power stored in the secondary battery 8203.
  • an electric refrigerator-freezer 8300 is an example of an electronic device using a secondary battery 8304.
  • the electric refrigerator-freezer 8300 includes a housing 8301, a refrigerator door 8302, a refrigerator door 8303, a secondary battery 8304, and the like.
  • a secondary battery 8304 is provided inside a housing 8301.
  • the electric refrigerator-freezer 8300 can receive power from a commercial power supply or can use power stored in the secondary battery 8304.
  • the power usage rate the ratio of the actually used power amount (referred to as the power usage rate) to the total power amount that can be supplied by the commercial power supply source is low.
  • the power usage rate the ratio of the actually used power amount (referred to as the power usage rate) to the total power amount that can be supplied by the commercial power supply source is low.
  • the secondary battery can be mounted on any electronic device. According to one embodiment of the present invention, cycle characteristics of a secondary battery are improved. Therefore, when the microprocessor (including the APS) that controls charging, which is one embodiment of the present invention, is mounted on the electronic device described in this embodiment, a longer-life electronic device can be provided. This embodiment can be implemented in appropriate combination with any of the other embodiments.
  • FIGS. 21A to 21E illustrate an example in which the power storage system of one embodiment of the present invention is mounted on an electronic device.
  • electronic devices to which the power storage system of one embodiment of the present invention is applied include a television device (also referred to as a television or a television receiver), a monitor for a computer, a digital camera, a digital video camera, a digital photo frame, and a mobile phone.
  • Examples include a telephone (also referred to as a mobile phone and a mobile phone device), a portable game machine, a portable information terminal, a sound reproducing device, and a large game machine such as a pachinko machine.
  • FIG. 21A illustrates an example of a mobile phone.
  • the mobile phone 7400 is provided with a display portion 7402 incorporated in a housing 7401, operation buttons 7403, an external connection port 7404, a speaker 7405, a microphone 7406, and the like.
  • the mobile phone 7400 includes the power storage system of one embodiment of the present invention.
  • the power storage system of one embodiment of the present invention includes, for example, a storage battery 7407 and the battery control circuit described in any of the above embodiments.
  • FIG. 21B shows a state where the mobile phone 7400 is curved.
  • the storage battery 7407 provided therein may also be bent.
  • FIG. 21C shows a bent state of the flexible storage battery.
  • a control circuit 7408 is electrically connected to the storage battery. As the control circuit 7408, the battery control circuit described in the above embodiment can be used.
  • a storage battery having a flexible shape can be incorporated along the inner or outer wall of a house or building, or along the curved surface of the interior or exterior of an automobile.
  • FIG. 21D illustrates an example of a bangle-type display device.
  • the portable display device 7100 includes a housing 7101, a display portion 7102, operation buttons 7103, and a power storage system of one embodiment of the present invention.
  • the power storage system of one embodiment of the present invention includes, for example, the storage battery 7104 and the battery control circuit described in any of the above embodiments.
  • FIG. 21E shows an example of a wristwatch-type portable information terminal.
  • the portable information terminal 7200 includes a housing 7201, a display portion 7202, a band 7203, a buckle 7204, operation buttons 7205, an input / output terminal 7206, and the like.
  • the portable information terminal 7200 can execute various applications such as mobile phone, e-mail, text browsing and creation, music playback, Internet communication, and computer games.
  • the display portion 7202 is provided with a curved display surface, and can perform display along the curved display surface.
  • the display portion 7202 includes a touch sensor and can be operated by touching the screen with a finger, a stylus, or the like.
  • an application can be activated by touching an icon 7207 displayed on the display portion 7202.
  • the operation button 7205 can have various functions such as power on / off operation, wireless communication on / off operation, manner mode execution and cancellation, and power saving mode execution and cancellation, in addition to time setting. .
  • the function of the operation button 7205 can be freely set by an operating system incorporated in the portable information terminal 7200.
  • the portable information terminal 7200 is capable of executing short-range wireless communication specified by a communication standard. For example, by communicating with a headset capable of wireless communication, it is possible to make a hands-free call.
  • the portable information terminal 7200 includes an input / output terminal 7206, and can directly exchange data with another information terminal via a connector. Charging can also be performed through the input / output terminal 7206. Note that the charging operation may be performed by wireless power feeding without using the input / output terminal 7206.
  • the portable information terminal 7200 includes the power storage system of one embodiment of the present invention.
  • the power storage system includes a storage battery and the battery control circuit described in any of the above embodiments.
  • Personal digital assistant 7200 preferably has a sensor.
  • a human body sensor such as a fingerprint sensor, a pulse sensor, or a body temperature sensor, a touch sensor, a pressure sensor, an acceleration sensor, or the like be mounted as the sensor.
  • the content described in one embodiment is another content described in the embodiment (may be a part of the content), and / or one or a plurality of contents.
  • Application, combination, replacement, or the like can be performed with respect to the content (or a part of the content) described in another embodiment.
  • constituent elements are classified according to functions and are shown as blocks independent of each other.
  • the blocks in the block diagram are not limited to the components described in the specification, and can be appropriately paraphrased according to the situation.
  • the size, the thickness of the layer, or the region is shown to be an arbitrary size for convenience of description. Therefore, it is not necessarily limited to the scale.
  • the drawings are schematically shown for the sake of clarity, and are not limited to the shapes or values shown in the drawings. For example, it is possible to include variations in signal, voltage, or current due to noise, or variations in signal, voltage, or current due to shift in timing.
  • electrode does not limit the functions of these components functionally.
  • an “electrode” may be used as part of a “wiring” and vice versa.
  • the term “electrode” or “wiring” includes a case where a plurality of “electrodes” or “wirings” are integrally formed.
  • voltage and potential can be paraphrased as appropriate.
  • the voltage refers to a potential difference from a reference potential.
  • the reference potential is a ground voltage (ground voltage)
  • the voltage can be rephrased to a potential.
  • the ground potential does not always mean 0V. Note that the potential is relative, and the potential given to a wiring or the like may be changed depending on a reference potential.
  • conductive layer can be changed to the term “conductive film”.
  • insulating film may be changed to the term “insulating layer” in some cases.
  • a switch is a switch that is in a conductive state (on state) or non-conductive state (off state) and has a function of controlling whether a current flows or not.
  • a switch has a function of selecting and switching a path through which a current flows.
  • a channel length refers to, for example, a region where a gate overlaps with a semiconductor (or a portion in a semiconductor in which current flows when the transistor is on) or a channel in a top view of a transistor. Means the distance between the source and the drain in the region.
  • a channel width refers to a source in a region where a semiconductor (or a portion where a current flows in a semiconductor when a transistor is on) and a gate electrode or a region where a channel is formed, for example. And the length of the part where the drain faces each other.
  • the expression “A and B are connected” includes a case where A and B are directly connected and a case where A and B are electrically connected.
  • “A and B are electrically connected” means that when there is an object having some kind of electrical action between A and B, it is possible to exchange electric signals between A and B. To say.

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  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Secondary Cells (AREA)
  • Charge And Discharge Circuits For Batteries Or The Like (AREA)
PCT/IB2019/057027 2018-08-31 2019-08-21 半導体装置及び半導体装置の動作方法 Ceased WO2020044168A1 (ja)

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US19/195,776 US20250260240A1 (en) 2018-08-31 2025-05-01 Semiconductor device and operating method of semiconductor device

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