JP7330986B2 - 半導体装置及び半導体装置の動作方法 - Google Patents

半導体装置及び半導体装置の動作方法 Download PDF

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JP7330986B2
JP7330986B2 JP2020539156A JP2020539156A JP7330986B2 JP 7330986 B2 JP7330986 B2 JP 7330986B2 JP 2020539156 A JP2020539156 A JP 2020539156A JP 2020539156 A JP2020539156 A JP 2020539156A JP 7330986 B2 JP7330986 B2 JP 7330986B2
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terminal
transistor
circuit
electrically connected
voltage
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JPWO2020044168A5 (https=
JPWO2020044168A1 (ja
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佑樹 岡本
貴彦 石津
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—ELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries
    • H02J7/50—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries acting upon multiple batteries simultaneously or sequentially
    • H02J7/52—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries acting upon multiple batteries simultaneously or sequentially for charge balancing, e.g. equalisation of charge between batteries
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—ELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries
    • H02J7/50—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries acting upon multiple batteries simultaneously or sequentially
    • H02J7/52—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries acting upon multiple batteries simultaneously or sequentially for charge balancing, e.g. equalisation of charge between batteries
    • H02J7/54—Passive balancing, e.g. using resistors or parallel MOSFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
    • H01M10/425—Structural combination with electronic components, e.g. electronic circuits integrated to the outside of the casing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
    • H01M10/44—Methods for charging or discharging
    • H01M10/441—Methods for charging or discharging for several batteries or cells simultaneously or sequentially
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
    • H01M10/48—Accumulators combined with arrangements for measuring, testing or indicating the condition of cells, e.g. the level or density of the electrolyte
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H10D88/01—Manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
    • H01M10/425—Structural combination with electronic components, e.g. electronic circuits integrated to the outside of the casing
    • H01M2010/4271—Battery management systems including electronic circuits, e.g. control of current or voltage to keep battery in healthy state, cell balancing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Secondary Cells (AREA)
  • Charge And Discharge Circuits For Batteries Or The Like (AREA)
JP2020539156A 2018-08-31 2019-08-21 半導体装置及び半導体装置の動作方法 Active JP7330986B2 (ja)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JP2018163168 2018-08-31
JP2018163168 2018-08-31
JP2018201005 2018-10-25
JP2018201005 2018-10-25
JP2018219225 2018-11-22
JP2018219225 2018-11-22
JP2018239852 2018-12-21
JP2018239852 2018-12-21
PCT/IB2019/057027 WO2020044168A1 (ja) 2018-08-31 2019-08-21 半導体装置及び半導体装置の動作方法

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JPWO2020044168A1 JPWO2020044168A1 (ja) 2021-08-26
JPWO2020044168A5 JPWO2020044168A5 (https=) 2022-07-28
JP7330986B2 true JP7330986B2 (ja) 2023-08-22

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Families Citing this family (7)

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Publication number Priority date Publication date Assignee Title
JP7405763B2 (ja) 2018-10-25 2023-12-26 株式会社半導体エネルギー研究所 蓄電装置及び蓄電装置の動作方法
JP7325439B2 (ja) 2018-11-22 2023-08-14 株式会社半導体エネルギー研究所 蓄電装置
KR102872438B1 (ko) 2018-12-19 2025-10-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 이차 전지의 과방전 방지 회로 및 이차 전지 모듈
JP7463298B2 (ja) 2019-01-24 2024-04-08 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の動作方法
US12463262B2 (en) * 2019-05-31 2025-11-04 Panasonic Intellectual Property Management Co., Ltd. Energy storage system
KR20230039565A (ko) * 2021-09-14 2023-03-21 에이블릭 가부시키가이샤 셀 밸런스 회로, 셀 밸런스 장치, 충방전 제어 회로, 충방전 제어 장치 및 배터리 장치
KR20230095314A (ko) 2021-12-22 2023-06-29 주식회사 엘지에너지솔루션 배터리 보호 회로에서의 스위치 손상 진단 장치 및 방법, 그리고 이를 포함하는 배터리 관리 장치

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JP2010246225A (ja) 2009-04-03 2010-10-28 Sony Corp 電池パックおよび充電方法
JP2016219028A (ja) 2012-04-11 2016-12-22 株式会社半導体エネルギー研究所 半導体装置

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JPH11234916A (ja) * 1998-02-16 1999-08-27 Rohm Co Ltd リチウムイオン電池パック
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JP7463298B2 (ja) * 2019-01-24 2024-04-08 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の動作方法
TW202537448A (zh) * 2019-01-25 2025-09-16 日商半導體能源研究所股份有限公司 半導體裝置及包括該半導體裝置的電子裝置
JP7653968B2 (ja) * 2020-02-21 2025-03-31 株式会社半導体エネルギー研究所 半導体装置、蓄電装置、電池制御回路、電子部品、車両、および電子機器

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Publication number Priority date Publication date Assignee Title
JP2006211885A (ja) 2004-12-27 2006-08-10 Nissan Motor Co Ltd 組電池の容量調整装置および容量調整方法
JP2010246225A (ja) 2009-04-03 2010-10-28 Sony Corp 電池パックおよび充電方法
JP2016219028A (ja) 2012-04-11 2016-12-22 株式会社半導体エネルギー研究所 半導体装置

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WO2020044168A1 (ja) 2020-03-05
US20250260240A1 (en) 2025-08-14
US20210242690A1 (en) 2021-08-05
US12431719B2 (en) 2025-09-30
JPWO2020044168A1 (ja) 2021-08-26

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