WO2020000609A1 - 显示面板及其制造方法 - Google Patents

显示面板及其制造方法 Download PDF

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Publication number
WO2020000609A1
WO2020000609A1 PCT/CN2018/101860 CN2018101860W WO2020000609A1 WO 2020000609 A1 WO2020000609 A1 WO 2020000609A1 CN 2018101860 W CN2018101860 W CN 2018101860W WO 2020000609 A1 WO2020000609 A1 WO 2020000609A1
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WIPO (PCT)
Prior art keywords
layer
display panel
inorganic material
barrier layer
flexible substrate
Prior art date
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Ceased
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PCT/CN2018/101860
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English (en)
French (fr)
Inventor
方宏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Application filed by Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd filed Critical Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority to US16/090,905 priority Critical patent/US20200006680A1/en
Publication of WO2020000609A1 publication Critical patent/WO2020000609A1/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to the field of display technology, in particular to a flexible display panel and a manufacturing method thereof.
  • substrate bending (pad Bending) technology directly bends the screen 91 to form a bent portion 92.
  • the bent portion 92 is bent to the back of the screen 91 to reduce the length of the lower border, thereby increasing the screen ratio.
  • the bending process involves large depth etching of the inorganic film layer, and it is difficult to control the uniformity of the etching depth.
  • PI loss polyimide loss
  • PI polyimide outgassing
  • An object of the present invention is to provide a display panel, which is suitable for a flexible display, so as to solve the problem that the polyimide (Polyimide) can be easily etched during the etching process of the prior art, especially in the process of pad bending. (PI) substrate surface, resulting in loss of polyimide quality and polyimide outgassing, which in turn affects product yield and shortens product life.
  • Polyimide Polyimide
  • PI polyimide
  • the present invention provides a display panel including a display area and a bent area, wherein the display panel includes:
  • An etch stop layer provided on the flexible substrate
  • An inorganic material functional layer is provided on the etch barrier layer.
  • the flexible substrate, the etch barrier layer and the inorganic material functional layer include the display area and the bending area.
  • a flat layer provided on the inorganic material functional layer
  • An anode and a pixel definition layer are sequentially formed on the flat layer;
  • the bent region includes a groove provided on the etching stopper layer, which penetrates the functional layer of the inorganic material by etching, the groove is filled with a polymer material, the bent region and the display region Connected by signal cable.
  • the etch stop layer includes alumina
  • the flexible substrate includes a substrate and a first polyimide layer disposed on the substrate.
  • the inorganic material functional layer includes a first barrier layer provided on the etch barrier layer; a buffer layer provided on the first barrier layer; and a structural film layer, provided On the inorganic material buffer layer.
  • a second polyimide layer and a second barrier layer are further included between the buffer layer of the inorganic material functional layer and the first barrier layer, and the second polyimide layer is provided Between the first and second barrier layers.
  • the first barrier layer is formed by depositing silicon oxide or silicon nitride and silicon oxide.
  • the buffer layer is formed by depositing silicon oxide or silicon nitride and silicon oxide.
  • the structural film layer includes a polysilicon layer, a gate layer and a dielectric layer.
  • a silicon nitride layer or a silicon oxide layer is further deposited between the etch stop layer and the flexible substrate.
  • the present invention further provides a method for manufacturing a display panel.
  • the display panel includes a display area and a bent area.
  • the method includes:
  • the etch stop layer includes alumina
  • the flexible substrate includes a substrate and a first polyimide layer disposed on the substrate.
  • the inorganic material functional layer includes a first barrier layer provided on the etch barrier layer; a buffer layer provided on the first barrier layer, and a structural film layer provided on On the buffer layer.
  • a second polyimide layer and a second barrier layer are further included between the buffer layer of the inorganic material functional layer and the first barrier layer, and the second polyimide layer is provided Between the first and second barrier layers.
  • the structural film layer includes a polysilicon layer, a gate layer and a dielectric layer.
  • the present invention also provides a display panel including a display area and a bent area, wherein the display panel includes:
  • a flexible substrate including a substrate and a first polyimide layer provided on the substrate;
  • An etch stop layer provided on the flexible substrate
  • An inorganic material functional layer is disposed on the etch barrier layer.
  • the inorganic material functional layer includes a first barrier layer and is disposed on the etch barrier layer.
  • a buffer layer is disposed on the first barrier layer.
  • a structural film layer provided on the buffer layer;
  • a second polyimide layer and a second barrier layer are further included between the buffer layer and the first barrier layer, and the second polyimide
  • An amine layer is provided between the first barrier layer and the second barrier layer;
  • a flat layer provided on the inorganic material functional layer
  • An anode and a pixel definition layer are sequentially formed on the flat layer;
  • the bent region includes a groove provided on the etching stopper layer, which penetrates the functional layer of the inorganic material by etching, the groove is filled with a polymer material, the bent region and the display region Connected by signal cable.
  • the etch stop layer comprises aluminum oxide.
  • the first barrier layer is formed by depositing silicon oxide or silicon nitride and silicon oxide.
  • the buffer layer is formed by depositing silicon oxide or silicon nitride and silicon oxide.
  • the structural film layer includes a polysilicon layer, a gate layer, and a dielectric layer.
  • a silicon nitride layer or a silicon oxide layer is further deposited between the etch stop layer and the flexible substrate.
  • the beneficial effect of the present invention is that the present invention is added to the polyimide substrate through the etching barrier layer of aluminum oxide, because the aluminum oxide has a better choice of etching than the inorganic film layers such as silicon nitride and silicon oxide. It is relatively high, so when etching the grooves in the bending area, there is no need to be careful that the polyimide layer will be etched, which will cause PIloss and PI outgassing, and can improve the bending The uniformity of the area etching depth can further improve the product yield and productivity, effectively improve the PI film loss caused by traditional etching, and reduce the problem of product life.
  • FIG. 1 is a schematic bending side view of a full screen of a mobile phone according to the prior art
  • FIG. 2 is a schematic structural diagram of a portion of a display panel according to a preferred embodiment of the present invention.
  • FIG. 3 is a schematic structural diagram of a display panel according to another preferred embodiment of the present invention.
  • FIG. 4 is a schematic partial cross-sectional view of a display panel of the present invention corresponding to an effective display area
  • FIG. 5 is a schematic sectional view of another part of the display panel of the present invention.
  • FIG. 6 is a schematic cross-sectional view of another part of the display panel of the present invention.
  • FIG. 7 is a schematic diagram of forming a groove in the bent region and the groove-filled polymer material
  • FIG. 8 is a schematic cross-sectional view of a display panel of the present invention.
  • FIG. 9 is an expanded schematic view of a full-screen display panel manufactured by a display panel according to the present invention.
  • FIG. 10 is a flowchart of a method of manufacturing a display panel according to the present invention.
  • FIG. 11 is a schematic cross-sectional view of a display panel corresponding to an effective display area according to another preferred embodiment of the present invention.
  • FIG. 12 is a schematic cross-sectional view of the display panel of FIG. 11 corresponding to a bent area.
  • the display panel of the present invention is an organic light emitting diode display panel.
  • the display panel uses a pad bending technology to directly bend the edge portion of the substrate to the back of the screen and form a bending area to reduce the length of the lower edge, thereby increasing the effective
  • the screen ratio of the display area can highlight the effect of increasing the effective display area.
  • the display panel 1 includes a flexible substrate 10 including a substrate 11 and a first polyimide (PI) layer 12 disposed on the substrate 11, wherein the first polyimide
  • the thickness of the amine layer 12 is 5 to 10 micrometers (um).
  • An etch stop layer 13 is disposed on the flexible substrate 10, and the etch stop layer 13 includes 3 to 20 nanometers (nm) of aluminum oxide (Al 2 O 3 ).
  • Al 2 O 3 aluminum oxide
  • Al 2 O 3 aluminum oxide
  • FIG. 4 is a schematic partial cross-sectional view of a display panel of the present invention corresponding to an effective display area.
  • a functional layer of an inorganic material is provided on the etching barrier layer 13 of aluminum oxide (Al 2 O 3 ).
  • the flexible substrate 10, the etching barrier layer 13 and the functional layer of the inorganic material include the display. Area and bend area.
  • the functional layer of the inorganic material includes a first barrier layer 14 provided on the etch barrier layer 13; a buffer layer 15 provided on the first barrier layer 14; and a structure
  • the film layer is disposed on the inorganic material functional layer.
  • the thickness of the first barrier layer 14 is 3000 ⁇ 6000 Angstroms ( ⁇ ), and it includes silicon oxide (SiOx).
  • the first barrier layer 14 includes a composite layer of silicon nitride (SiNx) and silicon oxide (SiOx).
  • the buffer layer 15 includes silicon oxide (SiOx).
  • the buffer layer 15 is annealed with an excimer laser (Excimer-Laser Annealing, ELA) crystallizes to form a polysilicon active layer, and performs processes such as exposure, drying, and stripping to complete the patterning.
  • ELA excimer-Laser Annealing
  • the buffer layer 15 includes silicon oxide (SiOx) with a thickness of 3000 to 6000 angstroms.
  • the buffer layer 15 includes a composite layer of silicon nitride (SiNx) and silicon oxide (SiOx) having a thickness of 500 to 800 angstroms.
  • the buffer layer 15 is provided as a buffer protection layer of the flexible substrate 10, and the first barrier layer 14 is provided to strengthen the protection of the flexible substrate 10 and further prevent moisture from penetrating into the surface of the flexible substrate 10.
  • FIG. 6 is a schematic partial cross-sectional view of a display panel of the present invention.
  • the structural film layer is provided on the buffer layer 15 of the inorganic material functional layer.
  • the structure film layer includes a polysilicon layer 18, a gate layer 16, and a dielectric layer 17, wherein the gate layer 16 and the dielectric layer 17 are two-layer structures, and the gate layer 16 near the buffer layer 15 has a thickness of 900 ⁇ 1500 angstroms of silicon oxide (SiOx) is deposited, and another gate layer 16 is deposited at a thickness of 1000-1300 angstroms of silicon nitride (SiNx), and patterning is completed.
  • the dielectric layer 17 is deposited using silicon oxide (SiOx) or silicon nitride (SiNx).
  • FIG. 8 is a schematic cross-sectional view of a display panel of the present invention corresponding to an effective display area.
  • a polysilicon layer 18 is formed on the buffer layer 15 and the signal line patterning is completed on the dielectric layer 17.
  • the signal line of the effective display area is connected to the first fan-out area of the bending area through via bridge 31 and the second fan-out area 32.
  • the structure film layer is further provided with a flat layer 19, an anode, a pixel definition layer 191, and isolation pillars to complete the structure of the display panel corresponding to the display area.
  • FIG. 7 is a schematic diagram of forming a trench in the bent region and the trench-filled polymer material.
  • the bending region of the present invention includes a trench 21 provided on the etching barrier layer 13, which penetrates the functional layer of the inorganic material through an etching process, and the trench 21 is filled with a polymer.
  • the material 22 is used to improve the bending resistance of the bending region.
  • the trench 21 penetrates the layer structure of the structural film layer, and the buffer layer 15 and the first barrier layer 14 of the functional layer of the inorganic material.
  • the etch stop layer 13 of the aluminum oxide (Al 2 O 3 ) is deposited on the flexible substrate 10, and the etch stop layer 13 of the aluminum oxide (Al 2 O 3 ) has a relatively high
  • the choice of etching can effectively protect the flexible substrate 10 from being damaged by etching.
  • FIG. 9 is an expanded schematic view of a full-screen display panel manufactured by a display panel according to the present invention.
  • a side edge of the effective display area is a bending area 3
  • two opposite sides of the bending area 3 are a first fan-out area 31 and a second fan-out area 32, respectively.
  • the first fan-out area 31 and the second fan-out area 32 of the bent area and the effective display area are connected by a signal line.
  • an aluminum oxide (Al 2 O 3 ) etch stop layer 13 is added to the flexible substrate 10, because aluminum oxide (Al 2 O 3 ) is compared with inorganic films such as silicon nitride and silicon oxide.
  • the etching choice of the layer is relatively high.
  • Aluminum oxide (Al 2 O 3 ) has a strong bond. It has the highest hardness among the oxides and has high chemical stability. It is resistant to most acids, alkalis, salts and melts.
  • the solution has excellent corrosion resistance, so when etching the grooves in the bending area, there is no need to be careful that the first polyimide layer 12 will be etched, causing PI loss and PI outgassing. ), And can improve the uniformity of the etching depth in the bending area, which can greatly improve product yield and productivity, effectively improve the PI film loss caused by traditional etching, and reduce product life issues.
  • the present invention further provides a method for manufacturing a display panel, the display panel including a display area and a bent area, wherein the method includes: Step S1: providing a flexible substrate including a substrate and The first polyimide layer.
  • Step S2 An etching barrier layer of aluminum oxide (Al 2 O 3 ) is plated on the flexible substrate by a deposition device.
  • the deposition device may be a physical vapor deposition using a target oxide plating, or may be used.
  • Step S3 forming an inorganic material functional layer on the etch barrier layer, the flexible substrate, the etch barrier layer and the inorganic material functional layer include the display area and the bending area, wherein the inorganic material functional layer includes a first A barrier layer is provided on the etch barrier layer; a buffer layer is provided on the first barrier layer, the buffer layer includes silicon oxide; and a structural film layer is provided on the buffer layer.
  • a second polyimide (PI) layer and a second barrier layer are further included between the buffer layer of the inorganic material functional layer and the first barrier layer, and the A second polyimide layer is disposed between the first and second barrier layers to form two PI layers.
  • PI polyimide
  • Step S4 forming a flat layer, an anode and a pixel definition layer on the buffer layer.
  • Step S5 forming a trench on the etch stop layer in the bending region, which penetrates the functional layer of the inorganic material by etching, and fills the trench with a polymer material, the bending region and the display The areas are connected by signal lines.
  • Other structures of the display panel manufactured by the method for manufacturing a display panel according to the present invention have been described in the previous paragraph, and will not be repeated here.
  • FIG. 11 is a schematic cross-sectional view of a display panel corresponding to an effective display area according to another preferred embodiment of the present invention.
  • the main difference between the embodiment shown in FIG. 11 and FIG. 12 and the foregoing embodiment is that the display panel of FIG. 11 and FIG. 12 is added with a second polyimide layer, and other structures are the same as the display panel of the foregoing embodiment.
  • the method of manufacturing the display panel of the embodiment of FIGS. 11 and 12 is the same as the method of manufacturing the display panel of the foregoing embodiment except that the second polyimide layer is added.
  • the display panel 1 of the embodiment shown in FIG. 11 includes a flexible substrate 10; an etch barrier layer 13 provided on the flexible substrate 10; and an inorganic material functional layer provided on the etch barrier layer 13,
  • the flexible substrate 10, the etch stop layer 13, and the functional layer of the inorganic material include the display area and the bent area; a flat layer 19 provided on the functional layer of the inorganic material; and an anode and a pixel definition layer 191, sequentially It is formed on the flat layer 19.
  • the inorganic material functional layer includes a first barrier layer 14 disposed on the etch barrier layer 13; a second polyimide (PI) layer 121 is disposed on the first barrier layer 14. .
  • a second barrier layer 141 is provided on the second polyimide (PI) layer 121, and the buffer layer 15 is provided on the second barrier layer 141.
  • the material is the same as the first barrier layer 14.
  • the second polyimide layer 121 is disposed between the first barrier layer 14 and the second barrier layer 141, and further forms two PI layers 12 and 121.
  • a structural film layer including a polysilicon array layer 18, a gate layer 16 and a dielectric layer 17 is disposed on the buffer layer 15.
  • an etching barrier layer 13 of aluminum oxide (Al 2 O 3 ) having a thickness of 3 to 20 nanometers (nm) is deposited on the flexible substrate 10, and a thickness of 3000 is provided on the etching barrier layer 13.
  • a first barrier layer 14 of ⁇ 6000 angstroms ( ⁇ ) is deposited on the first barrier layer 14 to a thickness of 5 to 10 microns (um), and the second polyimide
  • a second barrier layer 141 and a buffer layer 15 are sequentially deposited on the layer 121.
  • the bent region includes a trench provided on the etch stop layer 13, and the formation method is the same as that of the previous embodiment, that is, the function of penetrating the inorganic material through the etching process.
  • the groove is filled with a polymer material 22 to improve the bending resistance of the bending region 3, and the bending region and the display region are connected by a signal line.
  • the bending region 3 connects the signal line of the effective display region through a via bridge, and connects the first fan-out region 31 and the second fan-out region 32 of the bending region 3.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
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Abstract

一种显示面板，包括显示区域及弯折区域。所述显示面板包含一柔性基板;一蚀刻阻挡层，设于所述柔性基板上；一无机材料功能层，设于所述蚀刻阻挡层上，所述柔性基板、蚀刻阻挡层及无机材料功能层包含所述显示区域及弯折区域；一平坦层，设于所述无机材料功能层上；及阳极及像素定义层，依序形成于所述平坦层上。所述弯折区域包括设在所述蚀刻阻挡层上的沟槽，其通过蚀刻穿透所述无机材料功能层，所述沟槽内填充有聚合物材料，所述弯折区域及显示区域通过信号线连接。

Description

显示面板及其制造方法 技术领域
本发明涉及显示技术领域，特别是涉及一种柔性显示面板及其制造方法。
 背景技术
目前市场上小尺寸手机显示屏的主流方向是全面屏显示，不断推出屏占比高的产品，对于全面屏产品的开发和产品品质要求不断提高。在全面屏开发中，柔性显示凭借其可弯折的特性具有更多优势。
如图1所示，目前为了提高柔性显示屏的屏占比，普遍采用衬底弯折(pad bending)技术将屏幕91直接弯折而形成弯折部92。所述弯折部92弯折到屏幕91的背后，用以减小下边缘(border)长度，从而增大屏占比。在pad bending制程中会涉及到无机膜层的大深度蚀刻，蚀刻深度的均匀性(uniformity)的制程控制较为困难。在蚀刻过程中，很容易会蚀刻到聚亚酰胺(Polyimide, PI)基板表面，造成聚亚酰胺质量损失(PI loss)以及聚亚酰胺溢气(PI outgassing)等情况，会减短设备預防性维护(Preventive Maintenance,PM)间隔时间，产能大大受到限制。同时outgassing会造成薄膜晶体管(TFT)特性不稳定，影响到产品良率。若是蚀刻量不足，则模组弯折效果不佳，易于弯折时造成无机层的金属剥离(metal peeling)的问题。
 技术问题
本发明的目的在于提供一种显示面板，其适用于柔性显示器，以解决现有技术在蚀刻过程中，尤其在衬底弯折(pad bending)制程中，很容易会蚀刻到聚亚酰胺(Polyimide, PI)基板表面，造成聚亚酰胺质量损失以及聚亚酰胺溢气情况，进而影响到产品良率及减短产品使用寿命的问题。
 技术解决方案
本发明提供的技术方案如下：
本发明提供一显示面板，包括显示区域及弯折区域，其中，所述显示面板包含：
一柔性基板;
一蚀刻阻挡层，设于所述柔性基板上；
一无机材料功能层，设于所述蚀刻阻挡层上，所述柔性基板、蚀刻阻挡层及无机材料功能层包含所述显示区域及弯折区；
一平坦层，设于所述无机材料功能层上；及
阳极及像素定义层，依序形成于所述平坦层上；
其中所述弯折区域包括设在所述蚀刻阻挡层上的沟槽，其通过蚀刻穿透所述无机材料功能层，所述沟槽内填充有聚合物材料，所述弯折区域及显示区域通过信号线连接。
在一优选实施例中，所述蚀刻阻挡层包含三氧化二铝，且所述柔性基板包括一基板及一设于所述基板上的第一聚酰亚胺层。
在一优选实施例中，所述无机材料功能层包括第一屏障层，设于所述蚀刻阻挡层上;一缓冲层，其设于所述第一屏障层上；及一结构膜层，设于所述无机材料缓冲层上。
在一优选实施例中，所述无机材料功能层的缓冲层及第一屏障层之间还包括有第二聚酰亚胺层及第二屏障层，且所述第二聚酰亚胺层设于所述第一及第二屏障层之间。
在一优选实施例中，所述第一屏障层是以氧化硅或氮化硅及氧化硅沉积而成。
在一优选实施例中，所述缓冲层是以氧化硅或氮化硅及氧化硅沉积而成。
在一优选实施例中，所述结构膜层包括有多晶硅层、栅极层及介电层。
在一优选实施例中，所述蚀刻阻挡层和所述柔性基板之间更沉积一层氮化硅层或氧化硅层。
本发明另外提供一种制造显示面板的方法，所述显示面板包括显示区域及弯折区域，其中，所述方法包含：
提供一柔性基板；
在所述柔性基板上镀上一蚀刻阻挡层；
在所述蚀刻阻挡层上形成一无机材料功能层，所述柔性基板、蚀刻阻挡层及无机材料功能层包含所述显示区域及弯折区；
在所述无机材料功能层上形成一平坦层，阳极及像素定义层；及
在所述弯折区域形成位在所述蚀刻阻挡层上的沟槽，其通过蚀刻穿透所述无机材料功能层，并于沟槽内填充有聚合物材料，所述弯折区域及显示区域通过信号线连接。
在一优选实施例中，所述蚀刻阻挡层包含三氧化二铝，且所述柔性基板包括一基板及一设于所述基板上的第一聚酰亚胺层。
在一优选实施例中，所述无机材料功能层包括第一屏障层，设于所述蚀刻阻挡层上;一缓冲层，设于所述第一屏障层上，及一结构膜层，设于所述缓冲层上。
在一优选实施例中，所述无机材料功能层的缓冲层及第一屏障层之间还包括有第二聚酰亚胺层及第二屏障层，且所述第二聚酰亚胺层设于所述第一及第二屏障层之间。
在一优选实施例中，所述结构膜层包括有多晶硅层、栅极层及介电层。
本发明还提供一显示面板，包括显示区域及弯折区域，其中，所述显示面板包含：
一柔性基板，包括一基板及设于所述基板上的第一聚酰亚胺层;
一蚀刻阻挡层，设于所述柔性基板上；
一无机材料功能层，设于所述蚀刻阻挡层上，所述无机材料功能层包括第一屏障层，设于所述蚀刻阻挡层上；一缓冲层，其设于所述第一屏障层上；及一结构膜层，设于所述缓冲层上；所述缓冲层及第一屏障层之间还包括有第二聚酰亚胺层及第二屏障层，且所述第二聚酰亚胺层设于所述第一屏障层和第二屏障层之间；
一平坦层，设于所述无机材料功能层上；及
阳极及像素定义层，依序形成于所述平坦层上；
其中所述弯折区域包括设在所述蚀刻阻挡层上的沟槽，其通过蚀刻穿透所述无机材料功能层，所述沟槽内填充有聚合物材料，所述弯折区域及显示区域通过信号线连接。
在一优选实施例中，所述蚀刻阻挡层包含三氧化二铝。
在一优选实施例中，所述第一屏障层是以氧化硅或氮化硅及氧化硅沉积而成。
在一优选实施例中，所述缓冲层是以氧化硅或氮化硅及氧化硅沉积而成。
在一优选实施例中，所述结构膜层包括多晶硅层、栅极层及介电层。
在一优选实施例中，所述蚀刻阻挡层和所述柔性基板之间更沉积一层氮化硅层或氧化硅层。
 有益效果
本发明的有益效果为：本发明通过三氧化二铝的蚀刻阻挡层加入于聚酰亚胺基板上，由于三氧化二铝相较于一般如氮化硅及氧化硅的无机膜层的蚀刻选择比较高，因此在蚀刻弯折区域沟槽时，无须当心会蚀刻到聚酰亚胺层，而造成酰胺质量损失(PIloss)以及聚亚酰胺溢气(PI outgassing)的状况，并可改善弯折区域蚀刻深度的均匀性，进而可大幅提高产品良率及产能提升，有效改善传统蚀刻造成PI膜层损失，减段产品寿命的问题。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为根据现有技术关于手机的全面屏的弯折侧向示意图；
图2为根据本发明的一较佳实施例的显示面板的部分结构示意图；
图3为根据本发明的另一较佳实施例的显示面板的部分结构示意图；
图4为本发明的显示面板对应于有效显示区域的部分剖面示意图；
图5为本发明显示面板的另一部分剖面示意图；
图6为本发明显示面板的另一部分剖面示意图；
图7为所述弯折区域形成沟槽及所述沟槽填充聚合物材料的示意图；
图8为本发明显示面板的剖面示意图；
图9为根据本发明显示面板所制造的全面屏显示面板的展开示意图；
图10为本发明制造显示面板的方法的流程图；
图11为根据本发明另一较佳实施例的显示面板对应于有效显示区域的剖面示意图；
图12为图11的显示面板对应于弯折区域的剖面示意图。
 本发明的最佳实施方式
以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。
本发明的显示面板为有机发光二极管显示面板。所述显示面板为实现全面屏，通过衬垫弯折(pad bending)技术，将基板的边缘部分直接弯折到屏幕背后，并形成弯折区域，用以减小下边缘长度，从而增大有效显示区域的屏占比，尤其对于小尺寸手机显示屏更可凸显增大有效显示区域的效果。
请参照图2为本发明显示面板的一较佳实施例的部分结构示意图，亦可作为制作流程的说明。如图2所示，所述显示面板1包括一柔性基板10，其包括一基板11及第一聚酰亚胺(PI)层12设在所述基板11上，其中所述第一聚酰亚胺层12的厚度为5~10微米(um)。一蚀刻阻挡层13设于所述柔性基板10上，所述蚀刻阻挡层13包含3~20奈米(nm)的三氧化二铝(Al 2O 3)。请参阅图3为所述包含三氧化二铝(Al 2O 3)的柔性基板10的另一具体实施，其中所述第一聚酰亚胺层12上先沉积一层1~10奈米(nm)厚度的氮化硅(SiNx)或氧化硅(SiOx)层111，再沉积所述三氧化二铝(Al 2O 3)的蚀刻阻挡层13，用以提升所述蚀刻阻挡层13的阻挡效果。
请参阅图4为本发明显示面板对应于有效显示区域的局部剖面示意。如图4所示，所述三氧化二铝(Al 2O 3)的蚀刻阻挡层13上设有一无机材料功能层，所述柔性基板10、蚀刻阻挡层13及无机材料功能层包含所述显示区域及弯折区域。所述无机材料功能层包括第一屏障层14(barrier layer)，设于所述蚀刻阻挡层13上;一缓冲层15(buffer layer)，设于所述第一屏障层14上；及一结构膜层，设于所述无机材料功能层上。所述第一屏障层14的厚度为3000~6000埃(Å)，其包含氧化硅(SiOx)。或于另一实施例中，所述第一屏障层14包含氮化硅(SiNx)及氧化硅(SiOx)的复合层。所述缓冲层15包含氧化硅(SiOx)。
所述缓冲层15上并以准分子激光退火(Excimer-Laser Annealing, ELA)结晶形成多晶硅有源层，并进行曝光、烘干及剥离等工艺完成图形化。图5为本发明显示面板的弯折区域的部份结构剖面示意图。
具体地，所述缓冲层15包含厚度为3000~6000埃的氧化硅(SiOx)。或于另一实施例中，所述缓冲层15包含厚度500~800埃的氮化硅(SiNx)及3000~6000埃的氧化硅(SiOx)的复合层。所述缓冲层15的设置用以作为柔性基板10的缓冲保护层，而所述第一屏障层14的设置可加强柔性基板10的保护，亦可进一步避免水气渗入述柔性基板10的表面。
请参阅图6为本发明显示面板的部分剖面示意图。如图6及图8所示，所述无机材料功能层的缓冲层15上设有所述结构膜层。所述结构膜层包括多晶硅层18、栅极层16及介电层17，其中栅极层16及介电层17分别为二层结构，且靠近缓冲层15的栅极层16以厚度900~1500埃氧化硅(SiOx)沉积，另一栅极层16以厚度1000~1300埃氮化硅(SiNx)沉积，并完成图案化。所述介电层17是以氧化硅(SiOx)或氮化硅(SiNx)沉积。
请参阅图8为本发明的显示面板对应于有效显示区域的剖面示意。本发明显示面板于缓冲层15上形成有多晶硅层18，且于介电层17上完成信号线图形化，通过过孔桥接使有效显示区域的信号线接入弯折区域的第一扇出区域31及第二扇出区域32。所述结构膜层上并进一步形成有平坦层19、阳极、像素定义层191及隔离柱的设置，以完成显示面板对应于显示区域的结构。
图7为所述弯折区域形成沟槽及所述沟槽填充聚合物材料的示意图。特别说明的是，本发明的弯折区域处包括设在所述蚀刻阻挡层13上的沟槽21，其通过蚀刻工艺穿透所述无机材料功能层，且所述沟槽21内填充聚合物材料22，用以提高所述弯折区域的耐弯折性。具体而言，所述沟槽21穿透所述结构膜层的个层结构，及无机材料功能层的缓冲层15及第一屏障层14。蚀刻过程中由于所述三氧化二铝(Al 2O 3)的蚀刻阻挡层13沉积于所述柔性基板10上，且三氧化二铝(Al 2O 3)的蚀刻阻挡层13具有比较高的蚀刻选择，可以有效保护所述柔性基板10不受蚀刻损坏。
图9为根据本发明显示面板所制造的全面屏显示面板的展开示意图。如图9所示，所述有效显示区域的侧缘为弯折区域3，弯折区域3的相对二侧分别为第一扇出区域31第二扇出区域32。如前所述，通过信号线连接所述弯折区域的第一扇出区域31及第二扇出区域32和所述有效显示区域。
本发明通过三氧化二铝(Al 2O 3)的蚀刻阻挡层13加入于柔性基板10上，由于三氧化二铝(Al 2O 3)相较于一般如氮化硅及氧化硅的无机膜层的蚀刻选择比较高，三氧化二铝(Al 2O 3)具有强力的键结，其在氧化物当中有最高硬度，且化学稳定性高，对大部分酸性、碱性、盐类及熔融溶液有优秀的耐腐蚀性，因此在蚀刻弯折区域沟槽时，无须当心会蚀刻到第一聚酰亚胺层12，而造成酰胺质量损失(PI loss)以及聚亚酰胺溢气(PI outgassing)的状况，并可改善弯折区域蚀刻深度的均匀性，进而可大幅提高产品良率及产能提升，有效改善传统蚀刻造成PI膜层损失，减段产品寿命的问题。
如图10所示，本发明另外提供一种制造显示面板的方法，所述显示面板包括显示区域及弯折区域，其中，所述方法包含：步骤S1:提供一柔性基板，其包括一基板及第一聚酰亚胺层。
步骤S2: 在所述柔性基板上以沉积设备镀上一层三氧化二铝(Al 2O 3)的蚀刻阻挡层，所述沉积设备可为物理气相沉积以靶材氧化镀射，或可使用原子层沉积设备薄膜蒸镀;于另一实施例中，所述蚀刻阻挡层和柔性基板之间更沉积一层氮化硅层或氧化硅层。
步骤S3:在所述蚀刻阻挡层上形成一无机材料功能层，所述柔性基板、蚀刻阻挡层及无机材料功能层包含所述显示区域及弯折区，其中所述无机材料功能层包括第一屏障层，设于所述蚀刻阻挡层上;一缓冲层，设于所述第一屏障层上，所述缓冲层包含氧化硅；及一结构膜层，设于所述缓冲层上。
特别说明的是，于另一实施例中，所述无机材料功能层的缓冲层及第一屏障层之间更包括有第二聚酰亚胺(PI)层及第二屏障层，且所述第二聚酰亚胺层设于所述第一及第二屏障层之间，进而形成二层PI层。
步骤S4:在所述缓冲层上形成一平坦层，阳极及像素定义层。
步骤S5:在所述弯折区域形成位在所述蚀刻阻挡层上的沟槽，其通过蚀刻穿透无机材料功能层，并于沟槽内填充有聚合物材料，所述弯折区域及显示区域通过信号线连接。依据本发明制造显示面板的方法所制造的显示面板的其他结构，已说明于先前段落，于此不再复述。
图11为根据本发明另一较佳实施例的显示面板对应于有效显示区域的剖面示意图，图12为图11的显示面板对应于弯折区域的剖面示意图。图11及图12所示的实施例与前述实施例的主要区别在于，图11及图12的显示面板增加一层第二聚酰亚胺层，其他构造皆与前述实施例的显示面板相同。此外，图11及图12的实施例的显示面板的制造方法，除了增加所述第二聚酰亚胺层外，其他方法皆与制造前述实施例的显示面板的方法相同。
具体地，图11所示实施例的显示面板1包含一柔性基板10;一蚀刻阻挡层13，设于所述柔性基板10上;一无机材料功能层，设于所述蚀刻阻挡层13上，所述柔性基板10、蚀刻阻挡层13及无机材料功能层包含所述显示区域及弯折区域；一平坦层19，设于所述无机材料功能层上;及阳极及像素定义层191，依序形成于所述平坦层19上。
于此实施例中，所述无机材料功能层包括第一屏障层14，设于所述蚀刻阻挡层13上；第二聚酰亚胺(PI)层121设于所述第一屏障层14上。在所述第二聚酰亚胺(PI)层121上设有第二屏障层141，并在所述第二屏障层141上设有所述缓冲层15，其中所述第二屏障层141的材料相同于所述第一屏障层14。换言之，所述第二聚酰亚胺层121设于所述第一屏障层14及第二屏障层141之间，进而形成二层PI层12及121。此外，包括多晶硅阵层18、栅极层16及介电层17的结构膜层设于所述缓冲层15上。
具体地，在所述柔性基板10上沉积有3~20奈米(nm)的三氧化二铝(Al 2O 3)的蚀刻阻挡层13，并于所述蚀刻阻挡层13上设有一厚度3000~6000埃(Å)的第一屏障层14，再于所述第一屏障层14沉积第二聚酰亚胺层121，其厚度为5~10微米(um)，而第二聚酰亚胺层121上依序沉积有第二屏障层141及缓冲层15。通过增加第二聚酰亚胺层121，使显示面板具有相互间隔设置的第一及第二聚酰亚胺层12及121，用以提升显示面板的韧性及强度，且耐温性更加。
如图12所示，于此实施例中，所述弯折区域包括设在所述蚀刻阻挡层13上的沟槽，其形成方式相同于前述实施例，亦即通过蚀刻工艺穿透无机材料功能层。所述沟槽内填充有聚合物材料22，用以提高所述弯折区域3的耐弯折性，且所述弯折区域及显示区域通过信号线连接。具体而言，所述弯折区域3通过过孔桥接使有效显示区域的信号线接入，并连接所述弯折区域3的第一扇出区域31及第二扇出区域32。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (19)

  1. 一种显示面板，包括显示区域及弯折区域，其中，所述显示面板包含：
    一柔性基板;
    一蚀刻阻挡层，设于所述柔性基板上；
    一无机材料功能层，设于所述蚀刻阻挡层上，所述柔性基板、蚀刻阻挡层及无机材料功能层包含所述显示区域及弯折区域；
    一平坦层，设于所述无机材料功能层上；及
    阳极及像素定义层，依序形成于所述平坦层上；
    其中所述弯折区域包括设在所述蚀刻阻挡层上的沟槽，其通过蚀刻穿透所述无机材料功能层，所述沟槽内填充有聚合物材料，所述弯折区域及显示区域通过信号线连接。
  2. 如权利要求1的显示面板，其中，所述蚀刻阻挡层包含三氧化二铝，且所述柔性基板包括一基板及设于所述基板上的第一聚酰亚胺层
  3. 如权利要求1的显示面板，其中，所述无机材料功能层包括第一屏障层，设于所述蚀刻阻挡层上；一缓冲层，其设于所述第一屏障层上；及一结构膜层，设于所述缓冲层上。
  4. 如权利要求3的显示面板，其中，所述无机材料功能层的缓冲层及第一屏障层之间还包括有第二聚酰亚胺层及第二屏障层，且所述第二聚酰亚胺层设于所述第一屏障层和第二屏障层之间。
  5. 如权利要求3的显示面板，其中，所述第一屏障层是以氧化硅或氮化硅及氧化硅沉积而成。
  6. 如权利要求3的显示面板，其中，所述缓冲层是以氧化硅或氮化硅及氧化硅沉积而成。
  7. 如权利要求3的显示面板，其中，所述结构膜层包括多晶硅层、栅极层及介电层。
  8. 如权利要求1的显示面板，其中，所述蚀刻阻挡层和所述柔性基板之间更沉积一层氮化硅层或氧化硅层。
  9. 一种制造显示面板的方法，所述显示面板包括显示区域及弯折区域，其中，所述方法包含：
    提供一柔性基板；
    在所述柔性基板上镀上一蚀刻阻挡层；
    在所述蚀刻阻挡层上形成一无机材料功能层，所述柔性基板、蚀刻阻挡层及无机材料功能层包含所述显示区域及弯折区域；
    在所述无机材料功能层上形成一平坦层，阳极及像素定义层；及
    在所述弯折区域形成位在所述蚀刻阻挡层上的沟槽，其通过蚀刻穿透所述无机材料功能层，并于沟槽内填充有聚合物材料，所述弯折区域及显示区域通过信号线连接。
  10. 如权利要求9的制造显示面板的方法，其中，所述蚀刻阻挡层包含三氧化二铝，且所述柔性基板包括一基板及设于所述基板上的第一聚酰亚胺层。
  11. 如权利要求9的制造显示面板的方法，其中，所述无机材料功能层包括第一屏障层，设于所述蚀刻阻挡层上;一缓冲层，设于所述第一屏障层上，及一结构膜层，设于所述缓冲层上。
  12. 如权利要求11的制造显示面板的方法，其中，所述无机材料功能层的缓冲层及第一屏障层之间还包括有第二聚酰亚胺层及第二屏障层，且所述第二聚酰亚胺层设于所述第一及第二屏障层之间。
  13. 如权利要求11的制造显示面板的方法，其中，所述结构膜层包括有多晶硅层、栅极层及介电层。
  14. 一种显示面板，包括显示区域及弯折区域，其中，所述显示面板包含：
    一柔性基板，包括一基板及设于所述基板上的第一聚酰亚胺层;
    一蚀刻阻挡层，设于所述柔性基板上；
    一无机材料功能层，设于所述蚀刻阻挡层上，所述无机材料功能层包括第一屏障层，设于所述蚀刻阻挡层上；一缓冲层，设于所述第一屏障层上；及一结构膜层，设于所述缓冲层上；所述缓冲层及第一屏障层之间还包括有第二聚酰亚胺层及第二屏障层，且所述第二聚酰亚胺层设于所述第一屏障层和第二屏障层之间；
    一平坦层，设于所述无机材料功能层上；及
    阳极及像素定义层，依序形成于所述平坦层上；
    其中所述弯折区域包括设在所述蚀刻阻挡层上的沟槽，其通过蚀刻穿透所述无机材料功能层，所述沟槽内填充有聚合物材料，所述弯折区域及显示区域通过信号线连接。
  15. 如权利要求14的显示面板，其中，所述蚀刻阻挡层包含三氧化二铝。
  16. 如权利要求14的显示面板，其中，所述第一屏障层是以氧化硅或氮化硅及氧化硅沉积而成。
  17. 如权利要求14的显示面板，其中，所述缓冲层是以氧化硅或氮化硅及氧化硅沉积而成。
  18. 如权利要求14的显示面板，其中，所述结构膜层包括多晶硅层、栅极层及介电层。
  19. 如权利要求14的显示面板，其中，所述蚀刻阻挡层和所述柔性基板之间更沉积一层氮化硅层或氧化硅层。
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