CN109638021B - 柔性tft基板的制作方法及柔性oled面板的制作方法 - Google Patents
柔性tft基板的制作方法及柔性oled面板的制作方法 Download PDFInfo
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Abstract
本发明提供一种柔性TFT基板的制作方法及柔性OLED面板的制作方法。本发明的柔性TFT基板的制作方法，采用物理气相沉积法(PVD)通过溅射相应元素来沉积形成源漏极金属层，在PVD沉积源漏极金属层的过程中，溅射腔室的室内温度为90‑100℃，溅射功率为20‑30kw，相比于现有技术，在PVD沉积源漏极金属层时降低了溅射腔室的室内温度及溅射功率，从而减少了弯折用深孔内有机光阻块在沉积源漏极金属层过程中所积累的热量，能够防止弯折用深孔内的有机光阻块发生放气现象，降低此处源漏极金属层断裂及脱落的风险，从而大幅度改善了柔性TFT基板的性质，提升了产品良率。
Description
技术领域
本发明涉及显示技术领域，尤其涉及一种柔性TFT基板的制作方法及柔性OLED面板的制作方法。
背景技术
在显示技术领域，液晶显示器(Liquid Crystal Display，LCD)和有源矩阵驱动式有机电致发光(Active Matrix Organic Light-Emitting Diode，AMOLED)显示器等平板显示装置因具有机身薄、高画质、省电、无辐射等众多优点，得到了广泛的应用，如：移动电话、个人数字助理(PDA)、数字相机、计算机屏幕或笔记本屏幕等。
薄膜晶体管(Thin Film Transistor，TFT)阵列(Array)基板是目前LCD装置和AMOLED装置中的主要组成部件，直接关系到高性能平板显示装置的发展方向，用于向显示器提供驱动电路，通常设置有数条栅极扫描线和数条数据线，该数条栅极扫描线和数条数据线限定出多个像素单元，每个像素单元内设置有薄膜晶体管和像素电极，薄膜晶体管的栅极与相应的栅极扫描线相连，当栅极扫描线上的电压达到开启电压时，薄膜晶体管的源极和漏极导通，从而将数据线上的数据电压输入至像素电极，进而控制相应像素区域的显示。通常阵列基板上薄膜晶体管的结构又包括层叠设置于衬底基板上的栅极、栅极绝缘层、有源层、源漏极、及绝缘保护层。
其中，低温多晶硅(Low Temperature Poly-Silicon，LTPS)薄膜晶体管与传统非晶硅(A-Si)薄膜晶体管相比，虽然制作工艺复杂，但因其具有更高的载流子迁移率，被广泛用于中小尺寸高分辨率的LCD和AMOLED显示面板的制作，低温多晶硅被视为实现低成本全彩平板显示的重要材料。
在传统的柔性OLED面板的LTPS-TFT背板制作过程中，如图1所示现有一种柔性OLED面板的结构示意图，为增强柔性TFT背板的弯折性，会在弯折区(bending area)蚀刻出一个较深的洞(deep hole，DH)100，然后在DH100中填充ODH材料(organic deep holematerial)；但是在后续制作源漏极(source drain，SD)时，需利用物理气象沉积(PhysicalVapor Deposition，PVD)沉积SD金属层200，由于进行PVD沉积时溅射室的室内温度较高，在220℃-230℃左右，溅射功率为40-50kw左右，在慢慢沉积SD金属层200的过程中热量会慢慢累积，累积的热量会使下部DH100中的ODH材料发生放气(outgassing)现象，最终导致其上方的SD金属层200断裂甚至是脱落，进而严重影响TFT的性质，使良率下降。
发明内容
本发明的目的在于提供一种柔性TFT基板的制作方法，能够防止弯折用深孔内的有机光阻块发生放气现象，降低此处源漏极金属层断裂及脱落的风险，从而大幅度改善柔性TFT基板的性质，提升产品良率。
本发明的目的还在于提供一种柔性OLED面板的制作方法，能够防止弯折用深孔内的有机光阻块发生放气现象，降低此处源漏极金属层断裂及脱落的风险，从而大幅度改善柔性TFT基板的性质，提升产品良率。
为实现上述目的，本发明首先提供一种柔性TFT基板的制作方法，所述柔性TFT基板被划分出位于中部的显示区及位于所述显示区外侧的弯折区，该制作方法包括提供柔性基板的步骤、在柔性基板上形成无机层的步骤、在所述弯折区的无机层上蚀刻出露出柔性基板的弯折用深孔的步骤、在所述弯折用深孔内填充形成有机光阻块的步骤、在所述无机层上沉积并图案化形成源漏极金属层的步骤；
在形成所述源漏极金属层的步骤中采用物理气相沉积法通过溅射相应元素来沉积形成所述源漏极金属层，其中，溅射腔室的室内温度为90-100℃，溅射功率为20-30kw。
所述的柔性TFT基板的制作方法具体包括如下步骤：
步骤S1、提供柔性基板，在所述柔性基板上依次沉积形成无机非金属材料的阻挡层和缓冲层，在所述缓冲层上形成多晶硅有源层，在所述缓冲层及多晶硅有源层上沉积形成无机非金属材料的第一栅极绝缘层，在所述第一栅极绝缘层上沉积并图案化形成第一栅极金属层，在所述第一栅极绝缘层及第一栅极金属层上沉积形成无机非金属材料的第二栅极极绝缘层，在所述第二栅极极绝缘层上沉积并图案化形成第二栅极金属层，在所述第二栅极极绝缘层及第二栅极金属层上沉积形成无机非金属材料的层间绝缘层；
此时，所述柔性基板上所有的无机金属材料的膜层共同组成无机层，包括阻挡层、缓冲层、第一栅极绝缘层、第二栅极极绝缘层及层间绝缘层；
步骤S2、在所述弯折区的无机层上蚀刻出露出柔性基板的弯折用深孔，向所述弯折用深孔内填充有机光阻材料，得到位于弯折用深孔内的有机光阻块；
步骤S3、在所述层间绝缘层上沉积并图案化形成源漏极金属层，得到对应位于所述显示区的源漏极及贯穿所述弯折区的金属走线；
所述步骤S3中采用物理气相沉积法通过溅射相应元素来沉积形成所述源漏极金属层，其中，溅射腔室的室内温度为90-100℃，溅射功率为20-30kw。
所述源漏极金属层为由Ti/Al/Ti形成的三重层。
所述第一栅极金属层和第二栅极金属层均为Mo层。
所述第一栅极绝缘层为氧化硅层，所述第二栅极极绝缘层为氮化硅层。
所述阻挡层为氧化硅层。
所述缓冲层和所述层间绝缘层均为氧化硅层和氮化硅层的堆栈组合。
所述柔性基板为聚酰亚胺柔性基板。
所述有机光阻块的材料为聚酰亚胺材料。
本发明还提供一种柔性OLED面板的制作方法，按照如上所述的柔性TFT基板的制作方法制得柔性TFT基板，在所述柔性TFT基板上形成平坦层，在所述平坦层上形成OLED层。
本发明的有益效果：本发明的柔性TFT基板的制作方法，采用物理气相沉积法(PVD)通过溅射相应元素来沉积形成源漏极金属层，在PVD沉积源漏极金属层的过程中，溅射腔室的室内温度为90-100℃，溅射功率为20-30kw，相比于现有技术，在PVD沉积源漏极金属层时降低了溅射腔室的室内温度及溅射功率，从而减少了弯折用深孔内有机光阻块在沉积源漏极金属层过程中所积累的热量，能够防止弯折用深孔内的有机光阻块发生放气现象，降低此处源漏极金属层断裂及脱落的风险，从而大幅度改善了柔性TFT基板的性质，提升了产品良率。本发明的柔性OLED面板的制作方法，采用上述的柔性TFT基板的制作方法制得柔性TFT基板，然后在所述柔性TFT基板上形成平坦层及OLED层，能够防止弯折用深孔内的有机光阻块发生放气现象，降低此处源漏极金属层断裂及脱落的风险，从而大幅度改善了柔性TFT基板的性质，提升了产品良率。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为现有一种柔性OLED面板内ODH材料发生放气现象的示意图，
图2本发明的柔性TFT基板的制作方法一优选实施例的流程示意图；
图3为本发明的柔性TFT基板的制作方法一优选实施例的步骤S1的示意图；
图4-5为本发明的柔性TFT基板的制作方法一优选实施例的步骤S2的示意图；
图6为本发明的柔性TFT基板的制作方法一优选实施例的步骤S3的示意图；
图7为本发明的柔性OLED面板的制作方法的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图2，本发明首先提供一种柔性TFT基板的制作方法，包括如下步骤：
步骤S1、如图3所示，提供柔性基板10，在所述柔性基板10上依次沉积形成无机非金属材料的阻挡层21和缓冲层22，在所述缓冲层22上形成多晶硅有源层40，在所述缓冲层22及多晶硅有源层40上沉积形成无机非金属材料的第一栅极绝缘层23，在所述第一栅极绝缘层23上沉积并图案化形成第一栅极金属层51，在所述第一栅极绝缘层23及第一栅极金属层51上沉积形成无机非金属材料的第二栅极极绝缘层24，在所述第二栅极极绝缘层24上沉积并图案化形成第二栅极金属层52，在所述第二栅极极绝缘层24及第二栅极金属层52上沉积形成无机非金属材料的层间绝缘层25。
此时，所述柔性基板10上所有的无机金属材料的膜层共同组成无机层20，包括阻挡层21、缓冲层22、第一栅极绝缘层23、第二栅极极绝缘层24及层间绝缘层25。
具体地，所述第一栅极金属层51和第二栅极金属层52均为Mo(钼)层。
具体地，所述第一栅极绝缘层23为氧化硅(SiOx)层，所述第二栅极极绝缘层24为氮化硅(SiNx)层。
具体地，所述阻挡层21为氧化硅层。
具体地，所述缓冲层22和层间绝缘层25均为氧化硅层和氮化硅层的堆栈组合。
具体地，所述柔性基板10为聚酰亚胺(PI)柔性基板。
步骤S2、如图4-5所示，在所述弯折区2的无机层20上蚀刻出露出柔性基板10的弯折用深孔29，向所述弯折用深孔29内填充有机光阻材料，得到位于弯折用深孔29内的有机光阻块28。
具体地，所述有机光阻块28的材料为聚酰亚胺材料。
步骤S3、如图6所示，在所述层间绝缘层25上沉积并图案化形成源漏极金属层30，得到对应位于所述显示区1的源漏极31及贯穿所述弯折区2的金属走线32。
所述步骤S3中采用物理气相沉积法(PVD)通过溅射相应元素来沉积形成所述源漏极金属层30，其中，溅射腔室的室内温度为90-100℃，溅射功率为20-30kw。
具体地，所述源漏极金属层30为由Ti/Al/Ti(钛/铝/钛)形成的三重层。
本发明的柔性TFT基板的制作方法，采用物理气相沉积法(PVD)通过溅射相应元素来沉积形成源漏极金属层30，在PVD沉积源漏极金属层30的过程中，溅射腔室的室内温度为90-100℃，溅射功率为20-30kw，相比于现有技术，在PVD沉积源漏极金属层30时降低了溅射腔室的室内温度及溅射功率，从而减少了弯折用深孔29内有机光阻块28在沉积源漏极金属层30过程中所积累的热量，能够防止弯折用深孔29内的有机光阻块28发生放气现象，降低此处源漏极金属层30的金属走线32断裂及脱落的风险，从而大幅度改善了柔性TFT基板的性质，提升了产品良率。
请参阅图6，基于上述的柔性TFT基板的制作方法，本发明还提供一种柔性OLED面板的制作方法，首先按照如上所述的柔性TFT基板的制作方法制得柔性TFT基板，然后在所述柔性TFT基板上形成平坦层60，在所述平坦层60上形成OLED层70。
具体地，形成OLED层70的具体过程包括在所述平坦层60上沉积并图案化形成阳极层71，在所述平坦层60及阳极层71上形成像素定义层72，所述像素定义层72在所述阳极层71上围拢出像素开口，在所述像素开口内蒸镀形成有机功能层73，最后在所述有机功能层73和像素定义层72上的阴极层74。
本发明的柔性OLED面板的制作方法，采用上述的柔性TFT基板的制作方法制得柔性TFT基板，然后在所述柔性TFT基板上形成平坦层60及OLED层70，能够防止弯折用深孔29内的有机光阻块28发生放气现象，降低此处源漏极金属层30的金属走线32断裂及脱落的风险，从而大幅度改善了柔性TFT基板的性质，提升了产品良率。
综上所述，本发明的柔性TFT基板的制作方法，采用物理气相沉积法(PVD)通过溅射相应元素来沉积形成源漏极金属层，在PVD沉积源漏极金属层的过程中，溅射腔室的室内温度为90-100℃，溅射功率为20-30kw，相比于现有技术，在PVD沉积源漏极金属层时降低了溅射腔室的室内温度及溅射功率，从而减少了弯折用深孔内有机光阻块在沉积源漏极金属层过程中所积累的热量，能够防止弯折用深孔内的有机光阻块发生放气现象，降低此处源漏极金属层断裂及脱落的风险，从而大幅度改善了柔性TFT基板的性质，提升了产品良率。本发明的柔性OLED面板的制作方法，采用上述的柔性TFT基板的制作方法制得柔性TFT基板，然后在所述柔性TFT基板上形成平坦层及OLED层，能够防止弯折用深孔内的有机光阻块发生放气现象，降低此处源漏极金属层断裂及脱落的风险，从而大幅度改善了柔性TFT基板的性质，提升了产品良率。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。
Claims (8)
1.一种柔性TFT基板的制作方法，其特征在于，所述柔性TFT基板被划分出位于中部的显示区(1)及位于所述显示区(1)外侧的弯折区(2)，该制作方法包括提供柔性基板(10)的步骤、在柔性基板(10)上形成无机层(20)的步骤、在所述弯折区(2)的无机层(20)上蚀刻出露出柔性基板(10)的弯折用深孔(29)的步骤、在所述弯折用深孔(29)内填充形成有机光阻块(28)的步骤、在所述无机层(20)上沉积并图案化形成源漏极金属层(30)的步骤；
在形成所述源漏极金属层(30)的步骤中采用物理气相沉积法通过溅射相应元素来沉积形成所述源漏极金属层(30)，其中，溅射腔室的室内温度为90-100℃，溅射功率为20-30kw；
具体包括如下步骤：
步骤S1、提供柔性基板(10)，在所述柔性基板(10)上依次沉积形成无机非金属材料的阻挡层(21)和缓冲层(22)，在所述缓冲层(22)上形成多晶硅有源层(40)，在所述缓冲层(22)及多晶硅有源层(40)上沉积形成无机非金属材料的第一栅极绝缘层(23)，在所述第一栅极绝缘层(23)上沉积并图案化形成第一栅极金属层(51)，在所述第一栅极绝缘层(23)及第一栅极金属层(51)上沉积形成无机非金属材料的第二栅极极绝缘层(24)，在所述第二栅极极绝缘层(24)上沉积并图案化形成第二栅极金属层(52)，在所述第二栅极极绝缘层(24)及第二栅极金属层(52)上沉积形成无机非金属材料的层间绝缘层(25)；
此时，所述柔性基板(10)上所有的无机金属材料的膜层共同组成无机层(20)，包括阻挡层(21)、缓冲层(22)、第一栅极绝缘层(23)、第二栅极极绝缘层(24)及层间绝缘层(25)；
步骤S2、在所述弯折区(2)的无机层(20)上蚀刻出露出柔性基板(10)的弯折用深孔(29)，向所述弯折用深孔(29)内填充有机光阻材料，得到位于弯折用深孔(29)内的有机光阻块(28)；
步骤S3、在所述层间绝缘层(25)上沉积并图案化形成源漏极金属层(30)，得到对应位于所述显示区(1)的源漏极(31)及贯穿所述弯折区(2)的金属走线(32)；
所述步骤S3中采用物理气相沉积法通过溅射相应元素来沉积形成所述源漏极金属层(30)，其中，溅射腔室的室内温度为90-100℃，溅射功率为20-30kw；
所述源漏极金属层(30)为由Ti/Al/Ti形成的三重层。
2.如权利要求1所述的柔性TFT基板的制作方法，其特征在于，所述第一栅极金属层(51)和第二栅极金属层(52)均为Mo层。
3.如权利要求1所述的柔性TFT基板的制作方法，其特征在于，所述第一栅极绝缘层(23)为氧化硅层，所述第二栅极极绝缘层(24)为氮化硅层。
4.如权利要求1所述的柔性TFT基板的制作方法，其特征在于，所述阻挡层(21)为氧化硅层。
5.如权利要求1所述的柔性TFT基板的制作方法，其特征在于，所述缓冲层(22)和层间绝缘层(25)均为氧化硅层和氮化硅层的堆栈组合。
6.如权利要求1所述的柔性TFT基板的制作方法，其特征在于，所述柔性基板(10)为聚酰亚胺柔性基板。
7.如权利要求1所述的柔性TFT基板的制作方法，其特征在于，所述有机光阻块(28)的材料为聚酰亚胺材料。
8.一种柔性OLED面板的制作方法，其特征在于，按照如权利要求1-7中任一项所述的柔性TFT基板的制作方法制得柔性TFT基板，在所述柔性TFT基板上形成平坦层(60)，在所述平坦层(60)上形成OLED层(70)。
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