WO2019235169A1 - 水素リサイクルシステム及び水素リサイクル方法 - Google Patents

水素リサイクルシステム及び水素リサイクル方法 Download PDF

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Publication number
WO2019235169A1
WO2019235169A1 PCT/JP2019/019628 JP2019019628W WO2019235169A1 WO 2019235169 A1 WO2019235169 A1 WO 2019235169A1 JP 2019019628 W JP2019019628 W JP 2019019628W WO 2019235169 A1 WO2019235169 A1 WO 2019235169A1
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Prior art keywords
hydrogen
discharge space
exhaust gas
recycling
ammonia
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PCT/JP2019/019628
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English (en)
French (fr)
Japanese (ja)
Inventor
神原　信志
幸男 早川
友規 三浦
池田　達也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Gifu University NUC
Sawafuji Electric Co Ltd
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Gifu University NUC
Sawafuji Electric Co Ltd
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Application filed by Gifu University NUC, Sawafuji Electric Co Ltd filed Critical Gifu University NUC
Priority to CN201980029047.1A priority Critical patent/CN112135790A/zh
Priority to US17/056,265 priority patent/US12024427B2/en
Priority to KR1020207033549A priority patent/KR102469291B1/ko
Priority to DE112019002865.0T priority patent/DE112019002865B4/de
Publication of WO2019235169A1 publication Critical patent/WO2019235169A1/ja
Anticipated expiration legal-status Critical
Priority to US18/598,591 priority patent/US12246963B2/en
Ceased legal-status Critical Current

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Definitions

  • the nitride compound production apparatus is preferably an organometallic vapor phase growth apparatus.
  • a palladium alloy thin film can be particularly preferably used.
  • Other applicable materials for the hydrogen separation membrane 34 include zirconium-nickel (Zr—Ni) alloy thin film, vanadium-nickel (V—Ni) alloy thin film, niobium-nickel (Nb—Ni) alloy thin film, And one or more metals selected from the group consisting of niobium (Nb), nickel (Ni), cobalt (Co) and molybdenum (Mo), vanadium (V), titanium (Ti), zirconium (Zr), tantalum A thin film made of an alloy with one or more metals selected from the group consisting of (Ta) and hafnium (Hf).

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