WO2019227918A1 - 一种无基岛框架封装结构及其工艺方法 - Google Patents
一种无基岛框架封装结构及其工艺方法 Download PDFInfo
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- WO2019227918A1 WO2019227918A1 PCT/CN2018/124570 CN2018124570W WO2019227918A1 WO 2019227918 A1 WO2019227918 A1 WO 2019227918A1 CN 2018124570 W CN2018124570 W CN 2018124570W WO 2019227918 A1 WO2019227918 A1 WO 2019227918A1
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- Prior art keywords
- island
- metal sheet
- baseless
- chip
- hollow metal
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- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 50
- 239000004033 plastic Substances 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 16
- 239000003566 sealing material Substances 0.000 claims description 8
- 238000013461 design Methods 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 claims description 3
- 239000003365 glass fiber Substances 0.000 claims description 3
- 239000011347 resin Substances 0.000 abstract description 8
- 229920005989 resin Polymers 0.000 abstract description 8
- 239000005022 packaging material Substances 0.000 abstract description 3
- 238000003672 processing method Methods 0.000 abstract description 2
- 239000012778 molding material Substances 0.000 description 5
- 238000010137 moulding (plastic) Methods 0.000 description 3
- 230000032798 delamination Effects 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
Definitions
- the invention relates to a baseless island frame packaging structure and a processing method thereof, and belongs to the technical field of semiconductor packaging.
- lead-frame-free island products formed by etching are mounted on pins when the chip is mounted.
- the chip holder is on a pin, because the contact area between the chip and the pin is too small, it may cause an abnormal phenomenon that the wire is unstable or shakes or the chip is lifted by the force when the wire is wired.
- a conventional method for solving the above problem is to paste a cured film on a baseless island frame and cure it as a base island supporting chip.
- the cured film is a semi-flowing film material.
- the base island structure formed by the cured film will hinder the flow of the molding material in the vertical direction, which is not conducive to the flow of the molten molding material. It is easy to cause the flow velocity of the plastic molding material on the upper layer of the frame to be inconsistent with the flow velocity of the plastic molding material between the frames.
- the pin structure hinders the flow of the plastic molding material, further causing problems such as voids and unfilling in the area under the cured film .
- the cured film can be cured to form a chip support structure with a certain strength, but the support strength is not enough, and the operation of the wafer mounting and wire bonding process is still not stable. Under the impact of the chip mounting pressure and the ball welding pressure, curing will occur. Film cracking or delamination of cured film and frame.
- the technical problem to be solved by the present invention is to provide a baseless island frame packaging structure and a process method for the above-mentioned prior art.
- the baseless island frame is provided with a hollow metal sheet to form a structure of a supporting chip serving as a base island.
- the hollow metal sheet Can improve the mold flow filling and voids; and the strength of metal is better than resin materials (cured film), film mounting and wire bonding will be more stable than resin materials (cured film).
- a baseless island frame packaging structure which includes a baseless island frame, a hollow metal sheet is disposed on the front of the baseless island frame, and a chip is disposed on the hollow metal sheet, The chip and the baseless island frame are electrically connected through an electrical connection portion.
- the baseless island frame, the hollow metal sheet, the chip and the electrical connection components are all encapsulated with plastic sealing material.
- the back of the baseless island frame is Exposed plastic.
- a hollow groove is formed around the hollow metal sheet.
- the material of the hollow metal sheet may be replaced with high-strength ceramic or glass fiber plastic.
- a process method of a baseless island frame packaging structure includes the following steps:
- Step 1 Design a hollow metal sheet for the package, frame, and chip size
- Step 2 Install the designed and processed hollow metal sheet on the baseless island frame
- Step three setting a chip on the hollow metal sheet
- Step four the electrical connection component electrically connects the chip and the baseless island frame
- Step five encapsulation, covering the frame, the hollow metal sheet, the chip and the electrical connection component with a plastic sealing material.
- the hollow metal sheet is mounted on the pins of the baseless island frame through an insulating bonding material.
- the invention provides a baseless island frame packaging structure and a method thereof.
- the baseless island frame is provided with a hollow metal sheet to form a base island supporting chip structure.
- the hollow metal sheet can solve the problem that a cured film as a base island will hinder the molding compound.
- the hollow structure can improve the grasping ability of the metal sheet, and improve the delamination problem caused by the difference between the CTE (thermal expansion coefficient) of the metal material and the resin material; and the strength of the metal is better than Resin material (cured film), loading and wire bonding will be more stable than resin material (cured film).
- FIG. 1 is a schematic diagram of a package structure without a base island in the present invention.
- FIG. 2 is a top view of FIG. 1.
- FIG. 3 to FIG. 7 are schematic flowcharts of a process method of a baseless island frame packaging structure process according to the present invention.
- a baseless island frame packaging structure in this embodiment includes a baseless island frame 1, and a hollow metal sheet 2 is disposed on the front side of the baseless island frame 1, and the hollow metal
- the chip 2 is provided with a chip 3, and the chip 3 and the baseless island frame 1 are electrically connected through an electrical connection portion 4.
- the baseless island frame 1, the hollow metal sheet 2, the chip 3, and the electrical connection member 4 Plastic sealant 5 is encapsulated on the outside, and the plastic sealant 5 is exposed on the back of the baseless island frame 1;
- Hollow grooves 6 are formed around the hollow metal sheet 2;
- the material of the hollow metal sheet 2 is not limited to metal, and may be a high-strength material, such as ceramics, glass fiber plastic, and the like.
- Step 1 design the size of the hollow metal sheet according to the pin position of the package, and design the hollow structure (hollow groove) of the hollow metal sheet according to the chip size and the chip loading position; the hollow structure can be designed as a square or a circle.
- the special design such as shape allows the plastic sealing material to flow up and down through the hollow design, thereby encapsulating and filling the bottom of the hollow metal sheet and the pin area; at the same time, the hollow structure can increase the gripping ability of the hollow metal sheet and improve the metal and resin materials.
- CTE coefficient of thermal expansion
- Step 2 Referring to FIG. 4, the processed hollow metal sheet is mounted on the inner pins of the baseless island frame through an insulating bonding material (non-conductive adhesive) so that the hollow metal sheet can support the chip;
- Step 3 Referring to FIG. 5, setting a chip on the hollow metal sheet;
- Step 4 the electrical connection component electrically connects the chip and the baseless island frame
- Step 5 encapsulating, covering the baseless island frame, the hollow metal sheet, the chip and the electrical connection components with a plastic sealing material, and the back of the baseless island frame is exposed to the plastic sealing material.
- the present invention also includes other embodiments. Any technical solution formed by equivalent transformation or equivalent replacement shall fall within the protection scope of the claims of the present invention.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
一种无基岛框架封装结构及其工艺方法,所述结构包括无基岛框架(1),所述无基岛框架(1)正面设置有镂空金属片(2),所述镂空金属片(2)上设置有芯片(3),所述芯片(3)与无基岛框架(1)通过电性连接部(4)进行电性连接,所述无基岛框架(1)、镂空金属片(2)、芯片(3)和电性连接部件(4)外均包封有塑封料(5)。该无基岛框架封装结构及其工艺方法,在无基岛框架(1)上装镂空金属片(2)形成基岛作用的支撑芯片(3)的结构,镂空金属片(2)能够解决固化膜作为基岛会阻碍塑封料对固化膜下方区域填充的问题,从而改善模流填充及空洞;且金属的强度优于树脂材料(固化膜),装片及打线会比树脂材料(固化膜)更稳定。
Description
本发明涉及一种无基岛框架封装结构及其工艺方法,属于半导体封装技术领域。
目前通过蚀刻形成的引线框架无基岛产品,芯片装片时是架在管脚上的。实际上,当芯片架在管脚上时,由于芯片与管脚接触面积太小容易导致打线不稳晃动或打线时芯片受力一边抬起的异常现象。
现有解决上述问题的做法是在无基岛框架上贴固化膜固化作为基岛支撑芯片。然而,在实际工艺生产过程中,固化膜是半流动状态的膜材料,在后续注塑包封工序,固化膜形成的基岛结构会阻碍塑封材料上下方向的流动,不利于熔融的塑封材料的流动,容易会存在框架上层塑封材料的流动速度与框架间塑封材料的流动速度不一致,再加上管脚结构对于塑封材料的流动存在阻碍,进一步的使固化膜下方区域易产生空洞、未填充的问题。并且固化膜经过固化后才能形成具有一定强度的芯片支撑结构,但支撑强度还不够,装片及打线工序的作业仍不够稳定,在芯片装片压力及球焊压力的冲击下,会存在固化膜开裂或固化膜与框架分层的问题。
发明内容
本发明所要解决的技术问题是针对上述现有技术提供一种无基岛框架封装结构及其工艺方法,它在无基岛框架上装镂空金属片形成基岛作用的支撑芯片的结构,镂空金属片能够改善模流填充及空洞;且金属的强度优于树脂材料(固化膜),装片及打线会比树脂材料(固化膜)更稳定。
本发明解决上述问题所采用的技术方案为:一种无基岛框架封装结构,它包括无基岛框架,所述无基岛框架正面设置有镂空金属片,所述镂空金属片上设置有芯片,所述芯片与无基岛框架通过电性连接部进行电性连接,所述无基岛框架、镂空金属片、芯片和电性连接部件外均包封有塑封料,所述无基岛框架背面露出塑封料。
优选的,所述镂空金属片四周开设有镂空槽。
优选的,所述镂空金属片的材质可替换为高强度的陶瓷或玻纤塑料。
一种无基岛框架封装结构的工艺方法,所述方法包括以下步骤:
步骤一、针对封装及框架、芯片大小设计镂空金属片;
步骤二、将设计加工成型的镂空金属片装在无基岛框架上;
步骤三、在镂空金属片上设置芯片;
步骤四、电性连接部件电性连接芯片和无基岛框架;
步骤五、包封,用塑封料包覆框架、镂空金属片、芯片和电性连接部件。
优选的,步骤二中镂空金属片通过绝缘粘结材料装在无基岛框架的管脚上。
与现有技术相比,本发明的优点在于:
本发明一种无基岛框架封装结构及其工艺方法,它在无基岛框架上装镂空金属片形成基岛作用的支撑芯片的结构,镂空金属片能够解决固化膜作为基岛会阻碍塑封料对固化膜下方填充的问题,从而改善模流填充及空洞;镂空结构能提高金属片的抓胶能力,改善金属材质与树脂材质CTE(热膨胀系数)差异导致的分层问题;且金属的强度优于树脂材料(固化膜),装片及打线会比树脂材料(固化膜)更稳定。
图1为本发明一种无基岛框架封装结构的示意图。
图2为图1的俯视图。
图3~图7为本发明一种无基岛框架封装结构工艺方法的流程示意图。
其中:
无基岛框架1
镂空金属片2
芯片3
电性连接部件4
塑封料5
镂空槽6。
以下结合附图实施例对本发明作进一步详细描述。
如图1、图2所示,本实施例中的一种无基岛框架封装结构,它包括无基岛框架1,所述无基岛框架1正面设置有镂空金属片2,所述镂空金属片2上设置有芯片3,所述芯片3与无基岛框架1通过电性连接部4进行电性连接,所述无基岛框架1、镂空金属片2、芯片3和电性连接部件4外均包封有塑封料5,所述无基岛框架1背面露出塑封料5;
所述镂空金属片2四周开设有镂空槽6;
所述镂空金属片2的材质不局限于金属,高强度材料均可,如陶瓷、玻纤塑料等。
其工艺方法如下:
步骤一、参见图3,针对封装的管脚位置设计镂空金属片的尺寸,针对芯片尺寸及芯片的装片位置,设计镂空金属片的镂空结构(镂空槽);镂空结构可以设计为方形、圆形等特殊设计,使塑封料可以通过镂空设计上下流动,从而对镂空金属片底部及管脚区域进行包封填充;同时,镂空结构可以增加镂空金属片的抓胶能力,改善金属材质与树脂材质CTE(热膨胀系数)差异导致的分层问题;
步骤二、参见图4,将加工好的镂空金属片通过绝缘粘结材料(不导电胶)装在无基岛框架的内引脚上,使此镂空金属片能支撑芯片;
步骤三、参见图5,在镂空金属片上设置芯片;
步骤四、参见图6,电性连接部件电性连接芯片和无基岛框架;
步骤五、参见图7,包封,用塑封料包覆无基岛框架、镂空金属片、芯片和电性连接部件,并且无基岛框架背面露出于塑封料。
除上述实施例外,本发明还包括有其他实施方式,凡采用等同变换或者等效替换方式形成的技术方案,均应落入本发明权利要求的保护范围之内。
Claims (5)
- 一种无基岛框架封装结构,其特征在于:它包括无基岛框架(1),所述无基岛框架(1)正面设置有镂空金属片(2),所述镂空金属片(2)上设置有芯片(3),所述芯片(3)与无基岛框架(1)通过电性连接部(4)进行电性连接,所述无基岛框架(1)、镂空金属片(2)、芯片(3)和电性连接部件(4)外均包封有塑封料(5),所述无基岛框架(1)背面露出塑封料(5)。
- 根据权利要求1所述的一种无基岛框架封装结构,其特征在于:所述镂空金属片(2)四周开设有镂空槽(6)。
- 根据权利要求1所述的一种无基岛框架封装结构,其特征在于:所述镂空金属片(2)的材质可替换为高强度陶瓷或玻纤塑料。
- 一种无基岛框架封装结构的工艺方法,其特征在于所述方法包括以下步骤:步骤一、针对封装及框架、芯片大小设计镂空金属片;步骤二、将设计加工成型的镂空金属片装在无基岛框架上;步骤三、在镂空金属片上设置芯片;步骤四、电性连接部件电性连接芯片和无基岛框架;步骤五、包封,用塑封料包覆框架、镂空金属片、芯片和电性连接部件。
- 根据权利要求4所述的一种无基岛框架封装结构的工艺方法,其特征在于:步骤二中镂空金属片通过绝缘粘结材料装在无基岛框架的管脚上。
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