JP4002235B2 - 樹脂封止型半導体装置 - Google Patents
樹脂封止型半導体装置 Download PDFInfo
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Description
本発明の他の目的は、樹脂封止型半導体装置の製造プロセスでの歩留まりを高めることが可能な技術を提供することにある。
本発明の前記ならびにその他の目的と新規な特徴は、本明細書の記述及び添付図面によって明らかになるであろう。
(1)ダイパッドがその主面に搭載される半導体チップの面積に比べて小さい面積で形成され、前記半導体チップ及びダイパッドが樹脂封止体で封止される樹脂封止型半導体装置の製造方法であって、リードフレームの枠体に支持リードを介して支持されたダイパッドの主面に半導体チップを搭載する工程と、モールド金型の上型と下型との間に前記リードフレームを配置すると共に、前記モールド金型のキャビティ内に、前記ダイパッドの裏面からそれと対向する前記キャビティの内壁面までの隙間が前記半導体チップの主面からそれと対向する前記キャビティの内壁面までの隙間よりも前記ダイパッドの厚さに相当する分だけ狭くなるように、前記半導体チップ及びダイパッドを配置する工程と、前記半導体チップの一側面側に位置するゲートから前記キャビティに樹脂を注入する工程を備える。さらに前記モールド金型のゲートは、前記リードフレームの上側及び下側に位置するセンタ・ゲートを用い、前記センタ・ゲートから前記キャビティの上下に樹脂を同時に注入して樹脂封止体を形成する工程とを備える。
本発明によれば、樹脂封止型半導体装置の歩留まりを高めることができる。
本発明によれば、樹脂封止型半導体装置の製造プロセスでの歩留まりを高めることができる。
なお、実施形態を説明するための全図において、同一機能を有するものは同一符号を付け、その繰り返しの説明は省略する。
本実施形態の樹脂封止型半導体装置は、第1図及び第2図に示すように、ダイパッド3Aのチップ搭載面(主面)に半導体チップ2を搭載している。
前記半導体チップ2の平面形状は、例えば、9[mm]×9[mm]の外形寸法からなる正方形状で形成されている。半導体チップ2は、例えば、単結晶珪素からなる半導体基板及びその主面上に形成された配線層を主体とする構造で構成されている。
前記リードフレーム3は、枠体3Eで規定された領域内に、ダイパッド3A、4本の支持リード3B、複数本のリード3C等を配置している。ダイパッド3Aは4本の支持リード3Bを介して枠体3Eに連結されている。複数本のリード3Cの夫々は枠体3Eに連結され、かつタイバー(ダムバー)3Dで互いに連結されている。
まず、第4図に示すリードフレーム3を用意する。
次に、前記リードフレーム3の枠体3Eに支持リード3Bを介して支持されたダイパッド3Aのチップ搭載面(主面)に接着材4を多点塗布法で塗布する。
次に、前記ダイパッド3Aのチップ搭載面に接着材4を介在して半導体チップ2を搭載する。半導体チップ2は接着材4を介在してダイパッド3Aのチップ搭載面に接着固定される。
次に、前記半導体チップ2の外部端子2Aと、前記リードフレーム3の枠体に支持されたリード3Cのインナー部3C1とをボンディングワイヤ5で電気的に接続する。
本実施形態の樹脂封止型半導体装置は、第11図及び第12図に示すように、ダイパッド3Aのチップ搭載面(主面)に半導体チップ2を搭載している。
前記半導体チップ2の平面形状は、例えば、9[mm]×9[mm]の外形寸法からなる正方形状で形成されている。半導体チップ2の主面には、その主面の各辺に沿って配列された複数個の外部端子(ボンディングパッド)2Aが配置されている。
前記支持リード3Bは、前述の実施形態と同様に、リード部(3B1)とリード部(3B2)とで構成されている。
前記リードフレーム3は、枠体3Eで規定された領域内に、ダイパッド3A、4本の支持リード3B、複数本のリード3C等を配置している。ダイパッド3Aは4本の支持リード3Bを介して枠体3Eに連結されている。複数本のリード3Cの夫々は枠体3Eに連結され、かつタイバー(ダムバー)3Dで互いに連結されている。
まず、第13図に示すリードフレーム3を用意する。
次に、前記リードフレーム3の枠体3Eに支持リード3Bを介して支持されたダイパッド3Aのチップ搭載面(主面)に接着材を介在して半導体チップ2を搭載する。
次に、前記半導体チップ2の外部端子2Aと、前記リードフレーム3の枠体に支持されたリード3Cの一端側(インナー部3C1の一端側)とをボンディングワイヤ5で電気的に接続する。
Claims (3)
- 厚さと交差する平面形状が方形状から成り、かつ第1主面、前記第1主面と対向する第1裏面、及び前記第1主面の各辺に沿って形成された複数の外部端子を有する半導体チップと、
前記半導体チップを搭載し、かつ第2主面、前記第2主面と対向する第2裏面を有するダイパッドと、
前記ダイパッドを支持する複数の吊りリードと、
前記半導体チップの周囲に設けられた複数のリードと、
前記複数の外部端子と前記複数のリードを夫々電気的に接続する複数のボンディングワイヤと、
前記半導体チップ、前記ダイパッド、前記複数のリードの一部、及び前記複数のボンディングワイヤを封止し、かつ第3主面、前記第3主面と対向する第3裏面を含む樹脂封止体とを有し、
前記複数のリードのうち、前記吊りリードに隣接する第1リードの一端部と、前記第1リードに隣接する第2リードの一端部との間隔が、他のリードの一端部における間隔に比べて広く設けられ、
前記ダイパッドのサイズは、前記半導体チップのサイズに比べて小さく形成され、
前記半導体チップの前記第1主面から前記樹脂封止体の前記第3主面までの厚さが、前記ダイパッドの前記第2裏面から前記樹脂封止体の前記第3裏面までの厚さよりも厚いことを特徴とする樹脂封止型半導体装置。 - 請求項1に記載の樹脂封止型半導体装置であって、前記複数個の外部端子のうち、少なくとも、前記半導体チップの角部に最も隣接する外部端子とそれに隣接する外部端子との間隔が、他の外部端子での間隔に比べて広くなっていることを特徴とする樹脂封止型半導体装置。
- 請求項1に記載の樹脂封止型半導体装置であって、前記複数個の外部端子の夫々の間隔が、前記半導体チップの一辺の中央部から前記半導体チップの角部に向って徐々に広くなっていることを特徴とする樹脂封止型半導体装置。
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JP2003426020A JP4002235B2 (ja) | 2003-12-24 | 2003-12-24 | 樹脂封止型半導体装置 |
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