WO2019218637A1 - 显示面板母板、显示面板及其制作方法 - Google Patents

显示面板母板、显示面板及其制作方法 Download PDF

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Publication number
WO2019218637A1
WO2019218637A1 PCT/CN2018/118020 CN2018118020W WO2019218637A1 WO 2019218637 A1 WO2019218637 A1 WO 2019218637A1 CN 2018118020 W CN2018118020 W CN 2018118020W WO 2019218637 A1 WO2019218637 A1 WO 2019218637A1
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WO
WIPO (PCT)
Prior art keywords
layer
display panel
array substrate
organic light
area
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Application number
PCT/CN2018/118020
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English (en)
French (fr)
Inventor
张峰
李阳
原莎
刘晓佳
于锋
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云谷（固安）科技有限公司
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Application filed by 云谷（固安）科技有限公司 filed Critical 云谷（固安）科技有限公司
Priority to US16/568,272 priority Critical patent/US11050042B2/en
Publication of WO2019218637A1 publication Critical patent/WO2019218637A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/851—Division of substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present application relates to the field of display technologies, and in particular, to a display panel motherboard, a display panel, and a method of fabricating the same.
  • OLED Organic Light-Emitting Diode
  • OLED displays are easy to customize the appearance, more and more terminal manufacturers are applying them to full screen and borderless products.
  • full-screen and borderless products require a larger light-emitting area, in practical applications, it is usually necessary to provide a mounting slot on the organic light-emitting diode display to reserve a front camera or an earpiece on the terminal device. The location where the hardware is installed.
  • the packaging method of the OLED display device mainly includes a cover type package and a thin film package, wherein the thin film package realizes packaging of the OLED device through lamination of an organic thin film layer and an inorganic thin film layer, which is generally used for packaging of a flexible OLED display device.
  • the mounting slot For the display panel with the mounting slot, the mounting slot needs to be cut after the package is completed, and the display panel is cut out from the motherboard.
  • the cutting method for the display panel is usually cutter wheel cutting and laser cutting.
  • the damage of the components on the edge of the grooved area is extremely caused, and the display of the edge of the grooved area is abnormal and the sensing is poor.
  • a display panel master a display panel, and a method of fabricating the same are provided.
  • the display panel motherboard includes a plurality of display substrates, and the display substrate includes an array substrate, an organic light emitting unit, and an encapsulation layer.
  • the array substrate has at least one slot-reserved area
  • the organic light-emitting unit is formed on the array substrate, and is located on a region outside the slot-reserved area
  • the encapsulation layer is formed on the organic light-emitting layer a side of the unit facing away from the array substrate and covering the slot reserved area
  • the display substrate further includes an etch protection layer formed on a side of the encapsulation layer facing away from the array substrate.
  • the organic light emitting unit is not evaporated in the slot reserved area of the array substrate, and an etching protection layer is disposed on a side of the package layer facing away from the array substrate.
  • the use of the dry etching process for removing the film layers in the grooved reserved area to avoid the damage of the package layer and the organic light-emitting unit during the cutting process is improved.
  • the above display panel mother board also solves the problem of difficulty in alignment during laser cutting, thereby reducing the difficulty of slotting and improving the precision of slotting.
  • the display abnormality and the sensing defect of the edge of the grooved area caused by the film layer and the line damage at the edge of the mounting groove during the cutting process are avoided, thereby improving the production yield of the display panel.
  • the problem that the photoresist of the display area of the display panel fails due to exposure and development is solved, thereby improving the production yield of the display panel.
  • the etch protection layer covers at least an area of the array substrate except the slot reserved area.
  • the etch protection layer is a transparent material.
  • the display substrate includes a display area and a frame area surrounding the display area,
  • the slotted reserved area is located in the display area.
  • the display panel includes an array substrate, an organic light emitting unit, and an encapsulation layer formed on a side of the organic light emitting unit facing away from the array substrate,
  • the display panel includes at least one mounting slot, the mounting slot penetrating the display panel in a direction perpendicular to the array substrate,
  • the organic light emitting unit is formed on the array substrate and located in an area outside the mounting slot.
  • the display panel further includes an etch protection layer formed on a side of the encapsulation layer facing away from the array substrate.
  • the etch protection layer is a transparent material.
  • the etch protection layer covers at least an area on the display panel other than the mounting groove.
  • the mounting groove edge is provided with a predetermined thickness of the encapsulation layer material, and the encapsulation layer material of the predetermined thickness covers at least the adjacent organic light emitting unit at the edge of the mounting groove.
  • a method of manufacturing a display panel comprising:
  • the array substrate comprising at least one slot reserved area
  • Each of the film layers of the display panel located in the at least one slot-reserved area is removed using an etching process to form a mounting groove.
  • a carrier substrate is provided,
  • Each of the film layers of the display substrate located in at least one of the grooved reserved regions is removed by an etching process to form a mounting groove.
  • the etch protection layer is a non-transparent material
  • the method further includes:
  • the etch protection layer is removed.
  • the step of sequentially forming a thin film transistor, an anode, and a functional film layer on the base substrate further includes:
  • a buffer layer is also formed on the base substrate before the thin film transistor is formed.
  • the method further includes:
  • a planarization layer is formed on the formed thin film transistor to form a sufficiently flat top surface.
  • the step of forming a planarization layer on the formed thin film transistor further includes:
  • a via hole is formed in the planarization layer to expose a source electrode and a drain electrode of the thin film transistor.
  • the organic light emitting unit further includes a plurality of sub-pixels, wherein the step of forming an organic light emitting unit on the functional film layer except the groove reserved area further comprises: separately steaming using a precision metal mask A light-emitting layer emitting red, green, and blue light is plated to a region of the corresponding sub-pixel on the functional film layer.
  • the organic light emitting unit further includes a plurality of sub-pixels
  • the array substrate further includes a pixel defining layer
  • the pixel defining layer has a plurality of pixel defining openings
  • each of the pixel defining openings includes a plurality of sub-openings
  • a light-emitting layer emitting red light, green light, and blue light is separately vapor-deposited into the corresponding plurality of sub-openings on the pixel defining layer by using a precision metal mask to form corresponding plurality of sub-pixels.
  • a display device comprising the display panel described in the above embodiments.
  • FIG. 1 is a schematic structural view of a display panel motherboard according to an embodiment of the present application.
  • FIG. 2 is a schematic structural view of the display panel shown in FIG. 1.
  • FIG. 2 is a schematic structural view of the display panel shown in FIG. 1.
  • FIG. 3 is a cross-sectional view of the display panel shown in FIG. 2 with an etch protection layer retained.
  • FIG. 4 is a cross-sectional view showing the etch-protected layer of the display panel shown in FIG. 2.
  • FIG. 5 is a flow chart of a method for manufacturing a display panel according to an embodiment of the present application.
  • the display panel motherboard includes a motherboard body and a package structure disposed on the motherboard body.
  • the motherboard body has a plurality of display panels, and each of the display panels is provided with an OLED device.
  • the package structure includes a plurality of sub-package structures corresponding to the plurality of display panels, each sub-package structure for packaging the OLED device in the corresponding display panel.
  • the principle of laser cutting is to cut the film layer by thermal melting, and the packaging structure of the flexible display panel is a thin film encapsulation layer formed by an inorganic layer and an organic layer. Since the edge of the thin film encapsulation layer may be damaged by expansion or tear due to absorption of a large amount of heat, water vapor permeates from the side of the display panel, thereby destroying the organic light emitting unit, so that the display panel cannot achieve long-term excellent display performance.
  • high-energy laser irradiation generates high heat, so that the instantaneous temperature can reach 800 ° C ⁇ 1000 ° C, and static electricity is generated. This may cause damage to the organic layer, the functional layer, the metal cathode, and the like in the organic light-emitting unit.
  • laser positioning is difficult during laser cutting, which also increases the difficulty of cutting and affects the cutting accuracy.
  • the installation slot is an area for mounting the hardware structure.
  • the hardware structure includes at least one or more of the following structures: a front camera, a start button, an earpiece or a speaker.
  • the specific installation method of the hardware structure is not limited herein.
  • the shape of the mounting groove to be cut is determined according to the shape of the hardware structure to be mounted, that is, the mounting groove of a different shape may be provided for different hardware structures.
  • the cross-sectional shape of the mounting groove in the direction parallel to the substrate substrate may be one or more of the following shapes: circular, elliptical, rectangular, trapezoidal, rhombic or square, and the like.
  • the display panel provided by the embodiment of the present application is mainly applied to a full-screen or a borderless display panel, and may also be a display panel having a normal frame or a narrow frame.
  • FIG. 1 is a schematic structural view of a display panel motherboard according to an embodiment of the present application.
  • FIG. 2 is a view showing the structure of the display panel shown in FIG. 1.
  • 3 is a cross-sectional view showing the etch protection layer of the display panel shown in FIG. 2.
  • 4 is a cross-sectional view showing the etch-protected protective layer of the display panel shown in FIG. 2.
  • FIG. 2 For the convenience of description, only the structure of the portion related to the embodiment of the present application is shown in the above drawings.
  • a display panel motherboard 100 includes a plurality of display substrates and a surrounding area surrounding the display substrate (not labeled). The display panel is formed after the mounting slots are formed.
  • the display substrate refers to a panel cut out from the display panel mother board 100, wherein the display substrate includes a display area for forming a display element, and a frame for providing a signal line for display, etc., which is not allowed to be cut off. region.
  • one of the display panel motherboards 100 may include a display area (Active Area, AA) that is subsequently used to form the display screen, and may also include a border area (including settings) for subsequent display screens. Drive circuit, area of the chip).
  • the display panel mother board 100 has six display substrate areas that define the position of the display panel, and the display substrate area is rectangular and composed of four sides.
  • the subsequent cutting is performed in accordance with four sides, for example, the X-axis as shown in Fig. 1 is the cutting axis along one of the four sides.
  • the four sides of the six display substrate regions of FIG. 1 may be lines that are not actually visible, or may be visible lines that are reserved on the display panel motherboard 100.
  • the display substrate area is not limited to a rectangle, and may be other shapes such as a circle, a hexagon, or the like.
  • the display substrate includes an array substrate (not labeled), an organic light emitting unit 16 , an encapsulation layer 18 , and an etch protection layer 20 .
  • the array substrate that is, a TFT (Thin-film transistor) array substrate, refers to a substrate (for example, a substrate formed of a PI material) in which at least a functional film layer such as a TFT array, an anode, and a pixel defining layer is formed.
  • a substrate for example, a substrate formed of a PI material
  • a functional film layer such as a TFT array, an anode, and a pixel defining layer is formed.
  • the array substrate has at least one slot reserved area (not shown), and the slot reserved area is used to open the installation slot 12 for the subsequent.
  • the organic light emitting unit 16 is formed on the array substrate and located in a region outside the slot reserved area.
  • the encapsulation layer 18 is disposed on a side of the organic light emitting unit 16 facing away from the array substrate and covers the slot reserved area.
  • the display substrate further includes an etch protection layer 20 formed on a side of the encapsulation layer 18 facing away from the array substrate.
  • the array substrate includes a substrate substrate 14 (eg, made of a PI material), a thin film transistor (not shown) disposed on the substrate substrate 14, and an anode 15 and a function disposed on the thin film transistor.
  • Film layer 19 includes at least a pixel defining layer including a plurality of pixel defining openings (not labeled), and the pixel defining openings are used to set the organic light emitting unit 16.
  • the array substrate may further include a film layer such as a planarization layer 13 and a passivation layer, which is not limited herein.
  • the slotted reserved area may include a pre-selected divided area on the base substrate 14, the shape of the slotted reserved area being the same as the shape of the mounting slot 12, and the graphic size of the slotted reserved area and the mounting slot 12 The graphic size is the same.
  • the slotted reserved area is located in the display area, so that the frame area can be reduced, the display area of the display area can be increased, and the "full screen” or “narrow bezel” display panel can be fabricated.
  • the slotted reserved area may also span the display area and the border area, which is not limited herein.
  • the installation slot 12 is an area for mounting a hardware structure.
  • the present application names it as a mounting slot, but the name does not limit the present application, and therefore may be modified to other names as needed, for example, a shaped slot, a through hole. , grooves, mounting holes, etc.
  • the hardware structure includes at least one or more of the following structures: a front camera, a start button, an earpiece or a speaker.
  • the specific installation method of the hardware structure is not limited herein.
  • the shape of the mounting groove to be cut is determined according to the shape of the hardware structure to be mounted, that is, the mounting groove 12 of a different shape may be provided for different hardware structures.
  • the cross-sectional shape of the mounting groove 12 in the direction parallel to the substrate substrate may be one or more of the following shapes: circular, elliptical, rectangular, trapezoidal, rhombic or square, and the like.
  • the organic light emitting unit 16 includes at least an organic light emitting material layer and a cathode layer formed on the organic light emitting material layer.
  • the organic light emitting material layer may have a multilayer structure, for example, in addition to the organic light emitting material layer and the cathode layer, an electron transport layer and a hole transport layer that balance electrons and holes, and An electron injecting layer and a hole injecting layer that enhance injection of electrons and holes.
  • the encapsulation layer 18 is disposed on a side of the organic light emitting unit 16 facing away from the array substrate and covers the slot reserved area. Since the organic light-emitting material layer is very sensitive to an external environment such as moisture and oxygen, if the organic light-emitting material layer in the display panel is exposed to a water vapor or oxygen atmosphere, the performance of the display panel may be drastically reduced or completely damaged.
  • the encapsulation layer 18 can block air and moisture for the organic light emitting unit 16 to ensure the reliability of the display panel.
  • the encapsulation layer 18 may be one or more layers, and may be an organic film layer, an inorganic film layer, or a laminated structure of an organic film layer and an inorganic film layer.
  • the encapsulation layer 18 can include two inorganic film layers and one organic film layer between the two inorganic film layers.
  • the etching process removes the portion of the underlying material that is not masked by the upper mask material by physical and/or chemical means, thereby obtaining a pattern corresponding to the mask pattern on the underlying material.
  • the etching process generally includes wet etching and dry etching. The wet etching is performed by using a specific chemical reaction between the solution and the film to remove the portion of the film not covered by the photoresist mask, thereby achieving etching. the goal of.
  • the etching of the film layer can be performed by dry etching (for example, ICP dry etching), that is, the reaction gas is used to generate highly reactive ions and electrons by using a radio frequency power source.
  • dry etching for example, ICP dry etching
  • the area to be etched is bombarded and chemically reacted to selectively remove the portion that needs to be removed. Thereby, the substance of the area to be etched becomes a volatile gas, and is evacuated by the pumping system, and finally the desired depth is etched as designed.
  • the organic light emitting unit 16 is not evaporated in the slotted reserved area of the array substrate, and after the encapsulation layer 18 is formed, the film layers of the slotted reserved area are removed by the dry etching process, and the phase is removed. Compared with the use of laser cutting, it avoids damage of components such as the encapsulation layer 18 and the organic light-emitting unit 16 during the cutting process, thereby improving the production yield of the display panel. At the same time, the method also solves the problem of difficulty in alignment during laser cutting, thereby reducing the difficulty of slotting and improving the accuracy of slotting.
  • the method avoids the abnormality of the edge of the grooved area and the sensing defect caused by the damage of the film layer and the line at the edge of the mounting groove 12 caused by the cutting process, thereby improving the production of the display panel. rate.
  • the etching protection layer 20 is disposed on the side of the encapsulation layer 18 facing away from the array substrate to avoid the occurrence of the above, thereby further improving the production yield of the display panel.
  • the etch protection layer 20 covers at least an area on the array substrate other than the reserved area of the groove. In order to avoid as much as possible the effect of exposure development on the photoresist of the display region, the coverage of the etch protection layer 20 should be as large as possible. At the same time, considering the difficulty in the fabrication process of the etch protection layer 20, the simplest design is such that the etch protection layer 20 covers the entire package layer 18.
  • the etch protection layer 20 covers an area of the array substrate other than the reserved area of the trench, so that the thickness of the etched film layer can be reduced, thereby improving the precision of the grooving and realizing the display area. protection.
  • the etch protection layer 20 may be a transparent material or may also include a non-transparent material.
  • the etch protection layer 20 may include a transparent ITO (Indium Tin Oxide) material. Since the etch protection layer 20 is used to reduce or avoid the influence of the exposure and development on the photoresist of the display region when the dry etching process is employed, the etch protection layer 20 needs to at least partially cover the display region and directly affect the display effect. . Therefore, if the etch protection layer 20 is a non-transparent material, it needs to be removed in a subsequent process to avoid affecting the display effect. However, if the etch protection layer 20 is a transparent material, the etch protection layer 20 can be left in the subsequent production process of the display panel. In this way, the risk of damage to the structure of the encapsulation layer 18 during the subsequent removal of the etch protection layer 20 is reduced without affecting the display effect.
  • ITO Indium Tin Oxide
  • non-transparent material refers to a material that is not completely transparent, for example, the non-transparent material may be a translucent material or a completely opaque material.
  • the embodiment of the present application further provides a display panel 10 formed by opening a mounting groove on a display substrate.
  • the display panel 10 includes an array substrate, an organic light emitting unit 16 , an encapsulation layer 18 , and an etch protection layer 20 .
  • the display panel 10 includes at least one mounting slot 12 for providing a mounting space for the hardware structure, the mounting slot 12 extending through the display panel 10 in a direction perpendicular to the array substrate.
  • the organic light emitting unit 16 is formed on the array substrate and located in a region outside the mounting groove 12.
  • the encapsulation layer 18 is formed on a side of the organic light emitting unit 16 that faces away from the array substrate.
  • the etch protection layer 20 is formed on a side of the encapsulation layer 18 facing away from the array substrate.
  • the etch protection layer 20 may be a transparent material.
  • the display panel 10 is a single body formed by cutting the display panel mother board 100 and etching the mounting groove 12 for providing a mounting space for the hardware structure. Therefore, if the etch protection layer 20 is a transparent material, the protective layer 20 may be etched to reduce the risk of damage to the structure of the package layer 18 during the subsequent removal of the etch protection layer 20 without affecting the display effect. It remains on the display panel 10.
  • the display panel 10 in the embodiment of the present application does not vapor-deposit the organic light-emitting unit 16 in the slot-reserved area of the array substrate, and after forming the package layer 18, the dry-etching process is used to fill the reserved area.
  • the dry-etching process is used to fill the reserved area.
  • the etching protection layer 20 is disposed on the side of the encapsulation layer 18 facing away from the array substrate, which solves the problem that the photoresist of the display region of the display panel 10 is disabled due to exposure and development, and the production yield of the display panel 10 is improved.
  • the etch protection layer 20 at least partially covers an area of the display panel 10 other than the mounting slot 12.
  • the etch protection layer 20 covers an area of the display panel 10 other than the mounting groove 12. In this way, the influence of the exposure and development on the photoresist of the display area can be avoided as much as possible, and the protection of the display area can be realized. In addition, the accuracy of the grooving can be improved by reducing the thickness of the etched film layer.
  • the edge of the mounting groove 12 is provided with a predetermined thickness of the encapsulation layer material, and the encapsulation layer material of the predetermined thickness covers at least the organic light emitting unit 16 adjacent to the edge of the mounting groove 12.
  • the side surface of the organic light-emitting unit 16 adjacent to the edge of the mounting groove 12 is also covered, improving the reliability of packaging the organic light-emitting unit 16.
  • the specific production after the mounting groove 12 is etched, at least the organic light emitting unit 16 is covered on the edge of the mounting groove 12 by using a thin film package.
  • the encapsulating layer material may completely cover the film layer adjacent to the edge of the mounting groove 12, and may also partially cover the film layer adjacent to the edge of the mounting groove 12, which is not limited herein. It should be noted that the encapsulating layer material at the edge of the mounting groove 12 should cover at least the organic light emitting unit 16 to ensure that the organic light emitting material layer or the like in the organic light emitting unit 16 is not affected by the outside. As a preferred embodiment, as shown in FIGS. 3 and 4, the encapsulating layer material completely covers the film layer adjacent to the edge of the mounting groove 12. In this way, the packaging effect of the display panel 10 is ensured, and air, moisture, and the like are prevented from entering the display panel 10 from the mounting groove 12, thereby ensuring the reliability of the display panel 10.
  • an embodiment of the present application further provides a method for fabricating a display panel.
  • FIG. 5 is a flow chart showing a method of fabricating a display panel in an embodiment of the present application.
  • an embodiment of the present application provides a method for fabricating a display panel.
  • the display substrate includes an array substrate, an organic light emitting unit 16 and an encapsulation layer 18.
  • the array substrate has at least one slotted reserved area.
  • the organic light emitting unit 16 is formed on the array substrate and located on a region outside the reserved area of the slot.
  • the encapsulation layer 18 is formed on a side of the organic light emitting unit 16 facing away from the array substrate and covers the slot reserved area.
  • the display substrate further includes an etch protection layer 20 formed on a side of the encapsulation layer 18 facing away from the array substrate.
  • the method includes the following steps.
  • step S100 an array substrate is provided, and the array substrate includes at least one slot reserved area.
  • Step S110 to step S130 may be included in this step S100.
  • Step S110 providing a carrier substrate.
  • the carrier substrate may be a glass substrate.
  • step S120 the base substrate 14 is formed on the carrier substrate.
  • the base substrate 14 is formed on the carrier substrate.
  • the base substrate 14 is a flexible substrate, optionally formed of an organic polymer, silicon nitride, and silicon oxide.
  • the organic polymer may be a polyimide substrate, a polyamide substrate, a polycarbonate substrate, or a polyphenylene ether.
  • the base substrate 14 can be obtained by curing the polyimide after coating the polyimide glue on the carrier substrate.
  • step S130 a thin film transistor, an anode 15, and a functional film layer 19 are sequentially formed on the base substrate 14.
  • a thin film transistor is formed on the base substrate 14.
  • an additional layer such as a buffer layer may be formed on the substrate substrate 14 prior to forming the thin film transistor.
  • the buffer layer may be formed on the entire surface of the base substrate 14, or may be formed by patterning.
  • the buffer layer may have a suitable material including a material such as PET, PEN polyacrylate, and/or polyimide to form a layered structure in a single layer or a multilayer stack.
  • the buffer layer may also be formed of silicon oxide or silicon nitride, or may comprise a composite layer of an organic material layer and/or an inorganic material.
  • the thin film transistor can control the emission of each sub-pixel or can control the amount of emission each sub-pixel emits.
  • the thin film transistor may include a semiconductor layer, a gate electrode, a source electrode, and a drain electrode.
  • the semiconductor layer may be formed of an amorphous silicon layer, a metal oxide or a polysilicon layer, or may be formed of an organic semiconductor material.
  • the semiconductor layer includes a channel region and a source and drain region doped with dopants.
  • the semiconductor layer may be covered with a gate insulating layer, and the gate electrode may be disposed on the gate insulating layer.
  • the gate insulating layer may cover the entire surface of the base substrate 14.
  • the gate insulating layer can be formed by patterning.
  • the gate insulating layer may be formed of silicon oxide, silicon nitride, or other insulating organic or inorganic material in consideration of adhesion to an adjacent layer, formability of a stacked target layer, and surface flatness.
  • the gate electrode may be covered by an interlayer insulating layer formed of silicon oxide, silicon nitride, and/or other suitable insulating organic or inorganic materials. A portion of the gate insulating layer and the interlayer insulating layer may be removed, and a contact hole is formed after the removal to expose a predetermined region of the semiconductor layer.
  • the source electrode and the drain electrode may contact the semiconductor layer via the contact hole.
  • the thin film transistor Since the thin film transistor has a complicated layer structure, its top surface may be uneven.
  • the thin film transistor further includes a planarization layer 13 to form a sufficiently flat top surface. After the planarization layer 13 is formed, a via hole may be formed in the planarization layer 13 to expose the source and drain electrodes of the thin film transistor.
  • functional film layer 19 includes a pixel defining layer.
  • the anode 15 is a pixel electrode, wherein the pixel electrode includes a sub-pixel electrode corresponding to the sub-pixel region, and the plurality of sub-pixel electrodes are formed on the planarization layer 13.
  • a plurality of sub-pixel electrodes are electrically connected to the thin film transistor through the aforementioned via holes, where the sub-pixel electrode is generally referred to as an anode 15.
  • the pixel defining layer covers a plurality of sub-pixel electrodes having corresponding sub-pixel openings for defining sub-pixels, for example, the pixel defining layer may be made of a suitable organic material such as polyacrylate, polyimide, or the like or including a suitable inorganic A single material layer of material or a conforming material layer is formed. Specifically, in an embodiment, the pixel defining layer may expose a central portion of each sub-pixel electrode by a patterning process.
  • Step S138 forming an organic light emitting unit on the array substrate except the area outside the groove reserved area.
  • the organic light emitting unit 16 includes at least an organic light emitting material layer and a cathode layer formed on the organic light emitting material layer.
  • the organic light emitting material layer may have a multilayer structure, for example, in addition to the light emitting layer, an electron transport layer and a hole transport layer for balancing electrons and holes, and for enhancing electrons and An electron injecting layer and a hole injecting layer in which holes are injected.
  • the array substrate has a plurality of pixel regions, and each of the pixel regions may include a plurality of sub-pixel regions.
  • one pixel region may be a sub-pixel region that emits red light, a sub-pixel region that emits green light, and emits blue light.
  • the sub-pixel area is formed.
  • the organic light emitting unit 16 can function as one pixel including a plurality of sub-pixels.
  • a light-emitting layer emitting red, green, and blue light may be separately deposited using a precision metal mask to a corresponding sub-pixel region.
  • step S140 is further included in step S138.
  • step S140 the organic light emitting unit 16 is formed on the functional film layer 19 except for the area outside the groove reserved area.
  • the pixel defining layer has a plurality of pixel defining openings, each pixel defining an opening for defining a corresponding pixel.
  • the pixel defining opening includes a plurality of sub-openings, and the corresponding sub-pixels are disposed in the corresponding sub-openings.
  • the organic light-emitting unit 16 is formed by evaporation on the pixel defining opening, wherein the organic light-emitting material is not evaporated on the grooved region.
  • step S150 an encapsulation layer 18 is formed on a side of the organic light emitting unit 16 facing away from the substrate, and the encapsulation layer 18 covers the slot reserved area.
  • the encapsulation layer 18 may be formed on the array substrate on which the organic light-emitting unit 16 is evaporated by using a thin film package, and the grooved reserved region is also packaged.
  • the organic light-emitting unit 16 can be well protected before etching and trenching.
  • step S160 an etch protection layer 20 is formed on a side of the encapsulation layer 18 facing away from the substrate.
  • a transparent or non-transparent etch protection layer 20 material can be applied to the side of the encapsulation layer 18 that faces away from the substrate substrate.
  • a transparent ITO material is applied to the encapsulation layer 18 to avoid the effect of exposure development on the photoresist of the display area.
  • step S170 each film layer of the display substrate located in the at least one slot-reserved area is removed by an etching process to form the mounting groove 12.
  • a film layer or a structure such as the encapsulation layer 18, the thin film transistor, the base substrate 14, and the like are etched and removed by dry etching (for example, ICP dry etching), thereby forming the mounting groove 12.
  • dry etching for example, ICP dry etching
  • the slot is reserved by using a dry etching process.
  • the film layers of the zone are removed for grooving, which avoids the edge display of the grooving zone caused by the damage of the film layer and the line at the edge of the mounting groove 12 caused by the laser cutting and the cutter wheel cutting.
  • the abnormality and the poor sensing result in the production yield of the display panel 10.
  • the etching protection layer 20 is disposed on the side of the encapsulation layer 18 facing away from the array substrate, which solves the problem that the photoresist of the display region of the display panel 10 is disabled due to exposure and development, and the production yield of the display panel 10 is improved.
  • the etch protection layer 20 is a non-transparent material.
  • the method can also include the following steps.
  • step S180 the etch protection layer 20 is removed.
  • the etch protection layer 20 can be removed from the encapsulation layer 18 by mechanical or chemical removal, thereby preventing the etch protection layer 20 of the non-transparent material from affecting the display effect.
  • an embodiment of the present application further provides a display device.
  • the display device can be a display terminal, such as a tablet computer.
  • the display device can also be a mobile communication terminal, such as a mobile phone terminal.
  • the display device includes a display panel 10 and a control unit for transmitting display signals to the display panel 10.
  • the display panel motherboard 100, the display panel 10, the manufacturing method thereof, and the display device provided in the embodiment of the present application do not vapor-deposit the organic light-emitting unit 16 in the slot-reserved area of the array substrate, and form a package.
  • the film layer of the grooved reserved area is removed by the dry etching process, and the laser cutting is used in the conventional technology to avoid the encapsulation layer 18 and the organic light emitting unit 16 during the cutting process.
  • the damage of the components improves the production yield of the display panel 10.
  • it also solves the problem of difficulty in laser cutting alignment, reduces the difficulty of slotting, and improves the accuracy of slotting.
  • the edge of the grooved area is abnormally displayed and the sensing is poor due to the damage of the film layer and the line at the edge of the mounting groove 12 caused by the cutting process, thereby improving the production yield of the display panel 10. .
  • the etching protection layer 20 is disposed on the side of the encapsulation layer 18 facing away from the array substrate, which solves the problem that the photoresist of the display region of the display panel 10 is disabled due to exposure and development, and the production yield of the display panel 10 is improved.

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Abstract

本申请涉及一种显示面板母板、显示面板及其制作方法，包括多个显示基板，显示基板包括阵列基板、有机发光单元及封装层。阵列基板具有至少一个开槽预留区，有机发光单元形成于阵列基板，且位于开槽预留区外的区域。封装层形成于有机发光单元的背离阵列基板的一侧，且覆盖开槽预留区。显示基板还包括刻蚀保护层，刻蚀保护层形成于封装层的背离阵列基板的一侧。

Description

显示面板母板、显示面板及其制作方法
援引加入
本申请要求将于2018年05月14日提交中国专利局、申请号为201810456671.7、发明名称为“显示面板母板、显示面板及其制作方法”的中国专利申请的优先权，其全部内容通过引用并入在本申请中。
技术领域
本申请涉及显示技术领域，特别是涉及一种显示面板母板、显示面板及其制作方法。
背景技术
近年来，随着智能终端设备和可穿戴设备的技术发展，对于平板显示的需求变得越来越多样化，诸如，OLED(Organic Light-Emitting Diode，OLED)有机发光二极管显示器，其由于相比液晶显示屏省去了较为耗能的背光模组而具有自发光性能，因此，具有更好的节能性的优点。另外，OLED显示器由于相较于传统的平板显示器，具有可弯曲、柔韧性佳等优点而被广泛应用于手机、平板电脑等智能终端产品中。
由于OLED显示器便于对外观进行定制化，使得越来越多的终端厂商将其应用到全面屏和无边框产品中。然而，由于全面屏和无边框产品需要更大的发光面积，因此，在实际应用过程中，通常需要在有机发光二极管显示器上设置安装槽，用以在终端设备上预留前置摄像头或听筒等硬件的安装位置。
OLED显示器件的封装方式主要有盖板式封装和薄膜封装，其中薄膜封装是通过有机薄膜层及无机薄膜层的层叠来实现OLED器件的封装，其通常用于柔性OLED显示器件的封装。针对开设有安装槽的显示面板，在封装完成后需要切割出安装槽，并将显示面板从母板上切割下来。
对于显示面板的切割方式通常为刀轮切割及激光切割。但是，无论是在刀 轮切割还是在激光切割工艺中，都极易造成在开槽区域边缘上的元件的损伤，进而使开槽区域边缘的显示异常及传感不良。
发明内容
根据本申请公开的各种实施例，提供一种显示面板母版、显示面板及其制作方法。
显示面板母板，包括多个显示基板，所述显示基板包括阵列基板、有机发光单元及封装层，
所述阵列基板具有至少一个开槽预留区，所述有机发光单元形成于所述阵列基板上，且位于所述开槽预留区外的区域上，所述封装层形成于所述有机发光单元的背离所述阵列基板的一侧上，且覆盖所述开槽预留区，
所述显示基板还包括刻蚀保护层，所述刻蚀保护层形成于所述封装层的背离所述阵列基板的一侧上。
当上述显示面板母板中，在阵列基板的开槽预留区中不蒸镀有机发光单元，并在封装层的背离阵列基板的一侧上设置刻蚀保护层。相比传统技术中的激光切割，通过采用将开槽预留区的各膜层去除以开槽的干法刻蚀工艺，避免了切割过程中封装层及有机发光单元等元件的损伤，提高了显示面板的生产良率。与此同时，上述显示面板母板还解决了在激光切割时对位困难的问题，从而降低了开槽难度，提高了开槽的精度。相比传统技术中的刀轮切割，避免了在切割过程中由于安装槽边缘的膜层、线路损伤所造成的开槽区边缘的显示异常及传感不良，从而提高了显示面板的生产良率。此外，通过在封装层的背离阵列基板的一侧上设置刻蚀保护层，解决了由于曝光显影所造成的显示面板的显示区域的光阻会失效的问题，从而提高了显示面板的生产良率。
可选地，所述刻蚀保护层至少覆盖所述阵列基板除所述开槽预留区外的区域。
可选地，所述刻蚀保护层为透明材料。
可选地，所述显示基板包括显示区域及围绕所述显示区域的边框区域，
所述开槽预留区位于所述显示区域内。
显示面板，包括阵列基板、有机发光单元，以及形成于所述有机发光单元的背离所述阵列基板一侧上的封装层，
所述显示面板包括至少一个安装槽，所述安装槽在垂直于所述阵列基板的方向上贯穿所述显示面板，
所述有机发光单元形成于所述阵列基板上，且位于所述安装槽外的区域内，
所述显示面板还包括刻蚀保护层，所述刻蚀保护层形成于所述封装层的背离所述阵列基板的一侧上。
可选地，所述刻蚀保护层为透明材料。
可选地，所述刻蚀保护层至少覆盖所述显示面板上除所述安装槽外的区域。
可选地，所述安装槽边缘设置有预设厚度的封装层材料，预设厚度的所述封装层材料至少覆盖所述安装槽边缘相邻的有机发光单元。
显示面板的制作方法，所述方法包括：
提供阵列基板，所述阵列基板包括至少一个开槽预留区，
在所述阵列基板上，且位于除所述开槽预留区外的区域上形成有机发光单元，
在所述有机发光单元的背离所述阵列基板的一侧形成封装层，且所述封装层覆盖所述开槽预留区，
在所述封装层的背离所述阵列基板的一侧形成刻蚀保护层，
采用蚀刻工艺，去除位于所述至少一个开槽预留区的显示面板的各膜层，以形成安装槽。
可选的，提供承载基板，
在所述承载基板上形成衬底基板，
在所述衬底基板上依次形成薄膜晶体管、阳极及功能膜层，
在所述功能膜层上除开槽预留区外的区域形成有机发光单元，
在所述有机发光单元的背离所述衬底基板的一侧形成封装层，所述封装层覆盖所述开槽预留区，
在所述封装层的背离所述衬底基板的一侧形成刻蚀保护层，
采用蚀刻工艺，去除位于至少一个所述开槽预留区的显示基板的各膜层， 以形成安装槽。
可选地，所述刻蚀保护层为非透明材料，所述方法还包括：
去除所述刻蚀保护层。
可选地，在所述衬底基板上依次形成薄膜晶体管、阳极及功能膜层的步骤中还包括：
在形成所述薄膜晶体管之前，还在所述衬底基板上形成缓冲层。
可选地，在所述在所述衬底基板上依次形成薄膜晶体管、阳极及功能膜层的步骤中，还包括：
在所形成的薄膜晶体管上形成平坦化层，以形成足够平坦的顶表面。
可选地，在所形成的薄膜晶体管上形成平坦化层的步骤中还包括：
在所述平坦化层中形成通孔，以暴露所述薄膜晶体管的源电极和漏电极。
可选地，所述有机发光单元还包括多个子像素，其中，在所述功能膜层上除开槽预留区外的区域形成有机发光单元的步骤中还包括：使用精密金属掩膜板分别蒸镀发射红光、绿光及蓝光的发光层至所述功能膜层上对应的所述子像素的区域。
可选的，所述有机发光单元还包括多个子像素，所述阵列基板还包括像素限定层，所述像素限定层具有多个像素定义开口，每个所述像素定义开口包括多个子开口，其中，在所述阵列基板上除开槽预留区外的区域形成有机发光单元的步骤中，还包括：
使用精密金属掩膜板分别蒸镀发射红光、绿光及蓝光的发光层至所述像素限定层上的对应的所述多个子开口内，以形成对应的所述多个子像素。
一种显示装置，包括上述实施例所述的显示面板。
附图说明
图1为本申请一实施例中的显示面板母板的结构示意图。
图2为图1中所示的显示面板的结构示意图。
图3为图2中所示的显示面板的保留有刻蚀保护层的剖面示意图。
图4为图2中所示的显示面板的去除刻蚀保护层的剖面示意图。
图5为本申请一实施例中的显示面板的制作方法的流程框图。
具体实施方式
为了便于理解本申请，下面将参照相关附图对本申请进行更全面的描述。附图中给出了本申请的较佳的实施例。但是，本申请可以以许多不同的形式来实现，但并不限于本文所描述的实施例。相反地，提供这些实施例的目的是使对本申请的公开内容的理解更加透彻全面。
在显示面板的生产制造中，为了降低制造成本并形成大规模批量化的生产，通常是在一张较大的显示面板母板上制作多个显示面板，然后通过切割工序，将较大的显示面板母板切割为若干个单独的显示面板。一般地，显示面板母板包括母板主体及设置于母板主体上的封装结构。母板主体具有多个显示面板，每个显示面板中设置有OLED器件。封装结构包括与多个显示面板一一对应的多个子封装结构，每个子封装结构用于对相应的显示面板中的OLED器件进行封装。
在显示面板边框越来越窄的发展趋势下，在显示面板母板上的切割线位置与显示元件封装边界之间的距离逐渐缩窄。此外，在实际应用过程中，通常需要在显示面板上设置安装槽，用以在终端设备上预留前置摄像头、听筒、起始键或扬声器等硬件的安装位置。传统技术一般是在有效显示区域外的非显示区域内设置安装槽。由于这样限制了有效显示区域的面积，导致无法达到“全面屏”或“窄边框”的效果，因此，需要在显示区域内开设安装槽。
以开槽工艺中的激光切割为例，激光切割的原理是通过热融化将膜层切开，而柔性显示面板的封装结构为无机层及有机层形成的薄膜封装层。由于薄膜封装层的边缘可能因为吸收了大量热而易出现膨胀或撕裂等损伤，导致水汽从显示面板侧边渗透，从而破坏有机发光单元，使显示面板无法实现长期优良的显示性能。另外，在采用激光切割时，高能量的激光照射会发生较高的热量，使得瞬间温度可以达到800℃～1000℃，并产生静电。这可能对有机发光单元中的有机层、功能层及金属阴极等造成损伤。此外，在激光切割时进行激光定位困难，这也增加了切割难度，影响切割精度。
以开槽工艺中的刀轮切割为例，由于安装槽边缘区域强度低，因此刀轮的按压和磨边易引起应力释放，造成膜层、线路损伤，且在刀轮切割时，由于刀轮的磨边量有限，因此容易发生切割偏差或发生误切，从而易导致切割边缘的线路损坏，进而造成安装槽的边缘显示不良及传感不良。
因此，需要提供一种能够避免在显示面板的开槽过程中所造成的显示异常及传感不良的显示面板母板及显示面板。
安装槽是用来安装硬件结构的区域，为了方便说明，本申请命名其为安装槽，但该名称并不限定本申请，因此也可以根据需要修改为其它名称，例如，异形槽、通孔、凹槽、安装孔等。较佳地，硬件结构至少包括下列结构中的一种或多种：前置摄像头、起始键、听筒或扬声器。硬件结构的具体安装方式，在此不做限定。另外，在形成安装槽时，根据需要安装的硬件结构的形状来确定要切割的安装槽的形状，即，针对不同的硬件结构，可以设置不同形状的安装槽。较佳地，安装槽在平行于衬底基板方向上的截面形状可以为下列形状中的一种或多种：圆形、椭圆形、矩形、梯形、菱形或正方形等。
本申请实施例提供的显示面板主要是应用于全面屏或无边框的显示面板，当然也可以是具有普通边框或者窄边框的显示面板。
图1示出了本申请一实施例中的显示面板母板的结构示意图。图2示出了图1中所示的显示面板的结构示意图。图3示出了图2中所示的显示面板的保留有刻蚀保护层的剖面示意图。图4示出了图2中所示的显示面板的去除刻蚀保护层的剖面示意图。为了便于说明，在上述附图中仅示出了与本申请实施例相关的部分的结构。
请参阅附图1及图2，本申请实施例提供的显示面板母板100，包括多个显示基板及围绕显示基板的周围区域(图未标)，显示基板开设安装槽后形成显示面板。
显示基板是指从显示面板母板100中切割得到的面板，其中，显示基板包括用于形成显示元件的显示区域，以及用于为显示提供信号线路的走线等、不允许被切掉的边框区域。例如，在一些实施例中，显示面板母板100中的一个显示面板可以包括后续用于形成显示屏的显示区域(Active Area，AA)，还可以 包括后续用于显示屏的边框区域(包括设置驱动电路、芯片的区域)。
具体地，在如图1所示的实施例中，显示面板母板100具有六个显示基板区域，该显示基板区域划分出显示面板的位置，显示基板区域为矩形，由四个侧边组成。后续切割时按照四条侧边进行切割，例如如图1中所示的X轴为沿着四条侧边中的其中一条的切割轴线。容易理解的是，图1中的六个显示基板区域的四个侧边可以是实际不可见的线，也可以是在显示面板母板100上预留的可见线。同样可以理解的是，显示基板区域不限于矩形，还可以为其他形状，比如圆形、六边形等。
请参阅图3及图4，本申请的实施例中，显示基板包括阵列基板(图未标)、有机发光单元16、封装层18及刻蚀保护层20。
阵列基板，即TFT(Thin-film transistor，薄膜晶体管)阵列基板，是指至少形成有TFT阵列、阳极，以及像素定义层等功能膜层的衬底基板(例如，PI材料形成的基板)。
阵列基板具有至少一个开槽预留区(图未标)，开槽预留区用于为后续开设安装槽12。有机发光单元16形成于阵列基板上，且位于开槽预留区外的区域内。封装层18设置于有机发光单元16的背离阵列基板的一侧，且覆盖开槽预留区。显示基板还包括刻蚀保护层20，刻蚀保护层20形成于封装层18的背离阵列基板的一侧。
在一些实施例中，阵列基板包括衬底基板14(例如，由PI材料制成)、设置于衬底基板14上的薄膜晶体管(图未标)，以及设置于薄膜晶体管上的阳极15和功能膜层19。功能膜层19至少包括像素限定层，像素限定层包括多个像素定义开口(图未标)，像素定义开口用于设置有机发光单元16。当然，该阵列基板还可以包括平坦化层13、钝化层等膜层，在此不作限定。
开槽预留区可以包括在衬底基板14上预先选定划分的区域，该开槽预留区的形状与安装槽12的形状相同，且开槽预留区的图形尺寸与安装槽12的图形尺寸相一致。在一些实施例中，开槽预留区位于显示区域，使得可以减少边框区域，增大显示区域的显示面积，进而实现“全面屏”或“窄边框”显示面板的制作。当然，在其他一些实施例中，开槽预留区亦可跨越显示区域及边框区 域，在此不作限定。
安装槽12是用来安装硬件结构的区域，为了方便说明，本申请命名其为安装槽，但该名称并不限定本申请，因此也可以根据需要修改为其它名称，例如，异形槽、通孔、凹槽、安装孔等。较佳地，硬件结构至少包括下列结构中的一种或多种：前置摄像头、起始键、听筒或扬声器。硬件结构的具体安装方式，在此不做限定。另外，在形成安装槽时，根据需要安装的硬件结构的形状来确定要切割的安装槽的形状，即，针对不同的硬件结构，可以设置不同形状的安装槽12。较佳地，安装槽12在平行于衬底基板方向上的截面形状可以为下列形状中的一种或多种：圆形、椭圆形、矩形、梯形、菱形或正方形等。
有机发光单元16至少包括有机发光材料层及形成于有机发光材料层上的阴极层。在一些实施例中，有机发光材料层可以具有多层结构，例如，除了有机发光材料层和阴极层之外，还可包括平衡电子和空穴的电子传输层和空穴传输层，以及用于增强电子和空穴的注入的电子注入层和空穴注入层。
封装层18设置于有机发光单元16的背离阵列基板的一侧，且覆盖开槽预留区。由于有机发光材料层对水汽和氧气等外部环境十分敏感，因此如果将显示面板中的有机发光材料层暴露在有水汽或氧气的环境中时，可能造成显示面板的性能急剧下降或者完全损坏。封装层18能够为有机发光单元16阻挡空气及水汽，从而保证显示面板的可靠性。
封装层18可以是一层或多层结构，并且可以是有机膜层、无机膜层，或者是有机膜层和无机膜层的叠层结构。例如，在一些实施例中，封装层18可以包括两层无机膜层及一层位于两层无机膜层之间的有机膜层。
刻蚀工艺是通过物理和/或化学方法将下层材料中没有被上层掩膜材料掩蔽的部分去掉，从而在下层材料上获得与掩膜图形完全对应的图形。刻蚀工艺一般包括湿法刻蚀与干法刻蚀，湿法刻蚀是利用特定的溶液与薄膜间所进行的化学反应来去除薄膜未被光刻胶掩膜覆盖的部分，从而达到刻蚀的目的。
由于显示面板通常由非金属膜层构成，因此可以利用干法刻蚀(例如，ICP干法刻蚀)进行膜层的刻蚀，即利用射频电源使反应气体产生反应活性高的离子和电子，并对需要刻蚀的区域进行轰击及化学反应，以选择性地去除需要被 去除的部分。由此，要被刻蚀的区域的物质变成挥发性的气体，并经抽气系统被抽离，从而最后按照设计地刻蚀出所期望的深度。
如果采用在阵列基板的开槽预留区不蒸镀有机发光单元16，并在形成封装层18后，再利用干法刻蚀工艺将开槽预留区的各膜层去除开槽，则相比利用激光切割，其避免了切割过程中封装层18及有机发光单元16等元件的损伤，从而提高了显示面板的生产良率。与此同时，该方法还解决了激光切割时对位困难的问题，从而降低了开槽难度，提高了开槽的精度。相比刀轮切割，该方法避免了由于在切割过程中导致的安装槽12边缘的膜层、线路的损伤所造成的开槽区边缘显示异常及传感不良，从而提高了显示面板的生产良率。
由于采用干法刻蚀过程时需要刻蚀例如封装层18、薄膜晶体管及衬底基板14等膜层或结构，可能导致曝光显影造成显示面板的显示区域的光阻失效，进而造成显示不良。因此，在封装层18的背离阵列基板的一侧设置刻蚀保护层20，以避免上述情况的发生，从而进一步提高了显示面板的生产良率。
刻蚀保护层20至少覆盖阵列基板上除开槽预留区外的区域。为尽可能地避免曝光显影对显示区域的光阻的影响，刻蚀保护层20的覆盖范围应尽可能地大。同时，考虑到刻蚀保护层20制作工艺的难度，最简捷的设计为使刻蚀保护层20覆盖整个封装层18。
结合到显示面板的结构及制作工艺，需要至少刻蚀封装层18、薄膜晶体管、衬底基板14等结构或膜层。然而，若刻蚀厚度过厚，则会影响刻蚀效果。当刻蚀膜层厚度大于10μm时，则刻蚀效果会受到一定的影响。作为较佳的实施方式，该刻蚀保护层20覆盖阵列基板上除开槽预留区外的区域，如此可降低刻蚀的膜层的厚度，从而提高开槽的精度，且实现对显示区域的保护。
特别地，刻蚀保护层20可以为透明材料，或者也可以包括非透明材料。例如，刻蚀保护层20可以包括透明的ITO(氧化铟锡)材料。由于刻蚀保护层20用于降低或避免在采用干法刻蚀工艺时曝光显影对于显示区域的光阻的影响，所以刻蚀保护层20需要至少部分地覆盖显示区域，并可以直接影响显示效果。因此，若刻蚀保护层20为非透明材料，则需要在后续工艺中将其去除，以免影响显示效果。但是，若刻蚀保护层20为透明材料，则在显示面板后续生产工艺 中，可以将刻蚀保护层20保留。这样，在不影响显示效果的前提下，降低后续去除刻蚀保护层20过程中对封装层18结构可能带来损伤的风险。
上述非透明材料是指不完全透明的材料，例如，非透明材料可以为半透明材料或者是完全不透明的材料。
基于同样的发明构思，本申请实施例还提供一种显示面板10，该显示面板10通过在显示基板上开设安装槽后形成。
请参阅图3，该显示面板10包括阵列基板、有机发光单元16、封装层18及刻蚀保护层20。
显示面板10包括至少一个用于为硬件结构提供安装空间的安装槽12，安装槽12在垂直于阵列基板的方向上贯穿该显示面板10。有机发光单元16形成于阵列基板上，且位于安装槽12外的区域。封装层18形成于有机发光单元16的背离阵列基板的一侧上。刻蚀保护层20形成于封装层18的背离阵列基板的一侧上。
其中，刻蚀保护层20可以为透明材料。
需要强调的是，显示面板10为通过对显示面板母板100进行切割，并进行刻蚀所形成的用于为硬件结构提供安装空间的安装槽12的单体。因此，若刻蚀保护层20为透明材料时，在不影响显示效果的前提下，为降低后续去除刻蚀保护层20过程中对封装层18结构可能带来的损伤风险，刻蚀保护层20保留于显示面板10上。
如果本申请实施例中的显示面板10采用在阵列基板的开槽预留区不蒸镀有机发光单元16，并在形成封装层18后，再利用干法刻蚀工艺将开槽预留区的各膜层去除以开槽，则相比利用激光切割及刀轮切割，其避免了由于在切割过程中导致的安装槽12边缘的膜层、线路的损伤所造成的开槽区边缘显示异常及传感不良，从而提高了显示面板10的生产良率。
此外，在封装层18的背离阵列基板的一侧设置刻蚀保护层20，解决了曝光显影造成显示面板10的显示区域的光阻会失效的问题，提高了显示面板10的生产良率。
本申请一些实施例中，该刻蚀保护层20至少部分地覆盖显示面板10上除 安装槽12外的区域。作为较佳地实施方式，该刻蚀保护层20覆盖显示面板10上除安装槽12外的区域。这样，可以尽可能地避免曝光显影对显示区域的光阻的影响，实现对显示区域的保护。此外，通过降低刻蚀的膜层的厚度可以提高开槽的精度。
在本申请一些实施例中，安装槽12边缘设置有预设厚度的封装层材料，预设厚度的封装层材料至少覆盖安装槽12边缘相邻的有机发光单元16。这样，使有机发光单元16与安装槽12边缘相邻的侧面也被覆盖，提高了对有机发光单元16封装的可靠性。具体制作时，可在刻蚀出安装槽12后，利用薄膜封装在安装槽12边缘至少覆盖有机发光单元16。
封装层材料可完全覆盖安装槽12边缘相邻的膜层，亦可部分覆设安装槽12边缘相邻的膜层，在此不作限定。但需要提醒的是，位于安装槽12边缘的封装层材料应至少覆盖有机发光单元16，以保证有机发光单元16中的有机发光材料层等不受到外界的侵袭。作为较佳地实施方式，如图3及图4所示，该封装层材料完全覆盖安装槽12边缘相邻的膜层。这样，保证了显示面板10的封装效果，避免空气及水汽等从安装槽12进入显示面板10内，从而保证显示面板10的可靠性。
为便于进一步理解本申请的技术方案，本申请的实施例还提供一种显示面板的制作方法。
图5示出了本申请一实施例中的显示面板的制作方法的流程框图。
参阅附图，本申请一实施例提供了一种显示面板的制作方法，显示基板包括阵列基板、有机发光单元16及封装层18。阵列基板具有至少一个开槽预留区。有机发光单元16形成于阵列基板上，且位于开槽预留区外的区域上。封装层18形成于有机发光单元16的背离阵列基板的一侧，且覆盖开槽预留区。显示基板还包括刻蚀保护层20，刻蚀保护层20形成于封装层18的背离所述阵列基板的一侧。
该方法包括以下步骤。
步骤S100，提供一阵列基板，该阵列基板包括至少一个开槽预留区。
在该步骤S100中可以包括步骤S110至步骤S130。
步骤S110，提供一承载基板。
具体地，该承载基板可以为玻璃基板。
步骤S120，在承载基板上形成衬底基板14。
以柔性显示面板10为例，衬底基板14形成于承载基板上。衬底基板14为可弯曲基板，可选地为有机聚合物、氮化硅及氧化硅形成，例如，有机聚合物可以为聚酰亚胺基板、聚酰胺基板、聚碳酸酯基板、聚苯醚砜基板等中的一种。在一些实施例中，衬底基板14可通过在承载基板上涂覆聚酰亚胺胶液之后对聚酰亚胺进行固化来得到。
步骤S130，在衬底基板14上依次形成薄膜晶体管、阳极15及功能膜层19。
薄膜晶体管形成于衬底基板14上。在一些实施例中，可以在形成薄膜晶体管之前，在衬底基板14上形成诸如缓冲层的另外的层。缓冲层可以形成在衬底基板14整个表面上，也可以通过图案化来形成。
缓冲层可以具有包括PET、PEN聚丙烯酸酯和/或聚酰亚胺等材料中合适的材料，以单层或多层堆叠的形式形成层状结构。缓冲层还可以由氧化硅或氮化硅形成，或者可以包括有机材料层和/或无机材料的复合层。
薄膜晶体管可以控制每个子像素的发射，或者可以控制每个子像素发射时发射的量。薄膜晶体管可以包括半导体层、栅电极、源电极和漏电极。半导体层可以由非晶硅层、金属氧化物或多晶硅层形成，或者可以由有机半导体材料形成。在一些实施例中，半导体层包括沟道区和掺杂有掺杂剂的源区和漏区。
可以利用栅极绝缘层覆盖半导体层，栅电极可以设置栅极绝缘层上。大体上，栅极绝缘层可以覆盖衬底基板14的整个表面。一些实施例中，可以通过图案化形成栅极绝缘层。考虑到与相邻层的粘合、堆叠目标层的可成形性和表面平整性，栅极绝缘层可以由氧化硅、氮化硅或其他绝缘有机或无机材料形成。栅电极可以被由氧化硅、氮化硅和/或其他合适的绝缘有机或无机材料形成的层间绝缘层覆盖。可以去除栅极绝缘层和层间绝缘层的一部分，在去除之后形成接触孔以暴露半导体层的预定区域。源电极和漏电极可以经由接触孔接触半导体层。
由于薄膜晶体管具有复杂的层结构，因此，其顶表面可能是不平坦的。在 一些实施例中，薄膜晶体管还包括平坦化层13，以形成足够平坦的顶表面。在形成平坦化层13之后，可以在平坦化层13中形成通孔，以暴露薄膜晶体管的源电极和漏电极。
在一些实施例中，功能膜层19包括像素限定层。阳极15为像素电极，其中像素电极包括与子像素区域对应的子像素电极，多个子像素电极形成于平坦化层13上。多个子像素电极通过前述的通孔电连接到薄膜晶体管，这里子像素电极通常被称为阳极15。像素限定层覆盖多个子像素电极，具有对应的子像素开口以用于限定子像素，例如，像素限定层可以由诸如聚丙烯酸酯、聚酰亚胺等材料中合适的有机材料或包括合适的无机材料的单一材料层或符合材料层形成。具体地，在实施例中，像素限定层可以通过图案化处理暴露各子像素电极的中心部分。
步骤S138，在阵列基板上除开槽预留区外的区域上形成有机发光单元。
有机发光单元16至少包括有机发光材料层及形成于有机发光材料层上的阴极层。在一些实施例中，有机发光材料层可以具有多层结构，例如，除了发光层之外，还可以包括用于平衡电子和空穴的电子传输层和空穴传输层，以及用于增强电子和空穴的注入的电子注入层和空穴注入层。
阵列基板具有多个像素区域，每个像素区域可包括多个子像素区域，例如，在一些实施例中，一个像素区域可以由发射红光的子像素区域、发射绿光的子像素区域及发射蓝光的子像素区域构成。有机发光单元16可以作为一个像素，其包括多个子像素。在具体制作过程中，可以使用精密金属掩膜板分别蒸镀发射红光、绿光及蓝光的发光层至对应的子像素区域。
在一些实施例中，在阵列基板具有功能膜层19时，步骤S138中还包括步骤S140。
步骤S140，在功能膜层19上除开槽预留区外的区域形成有机发光单元16。
具体地，在一些实施例中，像素限定层具有多个像素定义开口，每个像素定义开口用于限定对应的像素。像素定义开口包括多个子开口，对应的子像素设置于对应的子开口中。在具体制作时，在像素定义开口上通过蒸镀形成有机发光单元16，其中在开槽区上不蒸镀有机发光材料。
步骤S150，在有机发光单元16的背离衬底基板的一侧形成封装层18，所述封装层18覆盖开槽预留区。
具体地，可采用薄膜封装在蒸镀完有机发光单元16的阵列基板上形封装层18，并且开槽预留区也进行封装。这样，在刻蚀开槽前，可以对有机发光单元16进行良好的保护。
步骤S160，在封装层18的背离衬底基板的一侧形成刻蚀保护层20。
在一些实施例中，可以将透明或非透明的刻蚀保护层20材料涂覆于封装层18的背离衬底基板的一侧。例如，将透明的ITO材料涂覆于封装层18上，从而避免曝光显影对显示区域的光阻的影响。
步骤S170，采用蚀刻工艺，去除位于至少一个开槽预留区的显示基板的各膜层，以形成安装槽12。
具体地，利用干法刻蚀(例如，ICP干法刻蚀)将例如封装层18、薄膜晶体管、衬底基板14等膜层或结构进行刻蚀并去除，从而形成安装槽12。
如果本申请实施例中的显示面板的制作方法，采用在阵列基板的开槽预留区不蒸镀有机发光单元16，并形成封装层18后，再利用干法刻蚀工艺将开槽预留区的各膜层去除以开槽，则相比利用激光切割及刀轮切割，其避免了由于在切割过程中导致的安装槽12边缘的膜层、线路的损伤所造成的开槽区边缘显示异常及传感不良，从而提高了显示面板10的生产良率。此外，在封装层18的背离阵列基板的一侧上设置刻蚀保护层20，解决了曝光显影造成显示面板10的显示区域的光阻会失效的问题，提高了显示面板10的生产良率。
在本申请的一些实施例中，该刻蚀保护层20为非透明材料。该方法还可以包括以下步骤。
步骤S180，去除刻蚀保护层20。
具体地，可以通过机械或化学去除的方式将刻蚀保护层20从封装层18上去除，从而避免非透明材料的刻蚀保护层20影响显示效果。
基于上述的显示面板10，本申请的实施例还提供一种显示装置。在一些实施例中，该显示装置可为显示终端，例如平板电脑，在另一些实施例中，该显示装置亦可为移动通信终端，例如手机终端。
在一些实施例中，该显示装置包括显示面板10及控制单元，该控制单元用于向显示面板10传输显示信号。
综上所述，本申请实施例中提供的显示面板母板100、显示面板10及其制作方法、显示装置，采用在阵列基板的开槽预留区不蒸镀有机发光单元16，并形成封装层18后，再利用干法刻蚀工艺将开槽预留区的各膜层去除开槽，相比传统技术中的利用激光切割，避免了切割过程中，封装层18及有机发光单元16等元件的损伤，提高了显示面板10的生产良率。与此同时，还解决了激光切割对位困难的问题，降低了开槽难度，提高了开槽的精度。相比刀轮切割，避免了由于在切割过程中导致的安装槽12边缘的膜层、线路的损伤所造成的开槽区边缘显示异常及传感不良，从而提高了显示面板10的生产良率。
且在封装层18背离阵列基板的一侧设置刻蚀保护层20，解决了曝光显影造成显示面板10的显示区域的光阻会失效的问题，提高了显示面板10的生产良率。
以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本申请的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本申请的保护范围。因此，本发明专利的保护范围应以所附权利要求为准。

Claims (14)

  1. 一种显示面板母板，包括多个显示基板，其中，所述显示基板包括：
    有机发光单元；
    阵列基板，所述阵列基板具有至少一个开槽预留区，所述有机发光单元形成于所述阵列基板上，且位于所述开槽预留区外的区域上，
    封装层，所述封装层形成于所述有机发光单元的背离所述阵列基板的一侧，且覆盖所述开槽预留区；及
    刻蚀保护层，所述刻蚀保护层形成于所述封装层的背离所述阵列基板的一侧。
  2. 根据权利要求1所述的显示面板母板，其中，所述刻蚀保护层至少覆盖所述阵列基板除所述开槽预留区外的区域。
  3. 根据权利要求1所述的显示面板母板，其中，所述刻蚀保护层为透明材料。
  4. 根据权利要求1所述的显示面板母板，其中，所述显示基板包括显示区域及围绕所述显示区域的边框区域，
    所述开槽预留区位于所述显示区域内。
  5. 一种显示面板，包括：
    阵列基板，所述阵列基板上设有至少一个安装槽，所述安装槽在垂直于所述阵列基板的方向上贯穿所述显示面板，
    有机发光单元，所述有机发光单元形成于所述阵列基板上，且位于所述安装槽外的区域上，
    刻蚀保护层，所述刻蚀保护层形成于所述封装层的背离所述阵列基板的一侧上，以及
    形成于所述有机发光单元的背离所述阵列基板的一侧的封装层。
  6. 根据权利要求5所述的显示面板，其中，所述刻蚀保护层为透明材料。
  7. 根据权利要求5所述的显示面板，其中，所述刻蚀保护层至少覆盖所述显示面板上除所述安装槽外的区域。
  8. 根据权利要求5所述的显示面板，其中，所述安装槽边缘设置有预设厚度的封装层材料，预设厚度的所述封装层材料至少覆盖所述安装槽边缘相邻的有机发光单元。
  9. 一种显示面板的制作方法，其中，所述方法包括：
    提供阵列基板，所述阵列基板包括至少一个开槽预留区，
    在所述阵列基板上，且位于除所述开槽预留区外的区域上形成有机发光单元，
    在所述有机发光单元的背离所述阵列基板的一侧形成封装层，且所述封装层覆盖所述开槽预留区，
    在所述封装层的背离所述阵列基板的一侧形成刻蚀保护层，
    采用蚀刻工艺，去除位于所述至少一个开槽预留区的显示面板的各膜层，以形成安装槽。
  10. 根据权利要求9所述的制作方法，其中，在所述提供阵列基板的步骤中包括：
    提供承载基板，
    在所述承载基板上形成衬底基板，
    在所述衬底基板上依次形成薄膜晶体管、阳极及功能膜层，
    在所述阵列基板上除所述开槽预留区外的区域上形成有机发光单元的步骤中包括：
    在所述功能膜层上除所述开槽预留区外的区域上形成有机发光单元。
  11. 根据权利要求9或10所述的显示面板的制作方法，其中，所述刻蚀保护层为非透明材料，所述方法还包括：
    去除所述刻蚀保护层。
  12. 根据权利要求10所述的显示面板的制作方法，其中，在所述衬底基板上依次形成薄膜晶体管、阳极及功能膜层的步骤中，还包括：
    在形成所述薄膜晶体管之前，还在所述衬底基板上形成缓冲层。
  13. 根据权利要求10所述的显示面板的制作方法，其中，在所述衬底基板上依次形成薄膜晶体管、阳极及功能膜层的步骤中，还包括：
    在所形成的薄膜晶体管上形成平坦化层，以形成平坦的顶表面，
    在所述平坦化层中形成通孔，以暴露所述薄膜晶体管的源电极和漏电极。
  14. 根据权利要求9所述的显示面板的制作方法，所述有机发光单元还包括多个子像素，所述阵列基板还包括像素限定层，所述像素限定层具有多个像素定义开口，每个所述像素定义开口包括多个子开口，其中，在所述阵列基板上除开槽预留区外的区域形成有机发光单元的步骤中，还包括：
    使用精密金属掩膜板分别蒸镀发射红光、绿光及蓝光的发光层至所述像素限定层上的对应的所述多个子开口内，以形成对应的所述多个子像素。
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