WO2019212799A1 - Rf grounding configuration for pedestals - Google Patents

Rf grounding configuration for pedestals Download PDF

Info

Publication number
WO2019212799A1
WO2019212799A1 PCT/US2019/028665 US2019028665W WO2019212799A1 WO 2019212799 A1 WO2019212799 A1 WO 2019212799A1 US 2019028665 W US2019028665 W US 2019028665W WO 2019212799 A1 WO2019212799 A1 WO 2019212799A1
Authority
WO
WIPO (PCT)
Prior art keywords
coupled
capacitor
electrode
pedestal
filter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2019/028665
Other languages
English (en)
French (fr)
Inventor
Satya THOKACHICHU
Iv Edward P. Hammond
Viren KALSEKAR
Zheng John Ye
Abdul Aziz Khaja
Vinay K. PRABHAKAR
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to SG11202010037QA priority Critical patent/SG11202010037QA/en
Priority to KR1020207034639A priority patent/KR102826471B1/ko
Priority to KR1020257020873A priority patent/KR20250103788A/ko
Priority to CN201980029768.2A priority patent/CN112106169B/zh
Priority to CN202410624390.3A priority patent/CN118448237A/zh
Priority to JP2020561041A priority patent/JP7408570B2/ja
Priority to CN202311588325.1A priority patent/CN117612918A/zh
Publication of WO2019212799A1 publication Critical patent/WO2019212799A1/en
Anticipated expiration legal-status Critical
Priority to JP2023214693A priority patent/JP7761626B2/ja
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/0115—Frequency selective two-port networks comprising only inductors and capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2007—Holding mechanisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating

Definitions

  • the combination of the first capacitor 130 and the first inductor 132 reduce RF current flow through the RF cable 1 17 compared to conventional approaches, by directing RF power current flow to internal surfaces of the chamber body 102.
  • RF power current flow through the RF cable 1 17 is reduced approximately 90 percent (%) compared to conventional approaches.
  • the RF cable 1 17 carries less than 3 A (rms), resulting in the RF cable operating at a cooler temperature compared to conventional approaches. Because the RF cable 1 17 operates at cooler temperatures, inadvertent or undesired solder reflow of electrical connections is mitigated.
  • arcing within the process chamber 100 is reduced.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Filters And Equalizers (AREA)
PCT/US2019/028665 2018-05-03 2019-04-23 Rf grounding configuration for pedestals Ceased WO2019212799A1 (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
SG11202010037QA SG11202010037QA (en) 2018-05-03 2019-04-23 Rf grounding configuration for pedestals
KR1020207034639A KR102826471B1 (ko) 2018-05-03 2019-04-23 페데스탈들을 위한 rf 접지 구성
KR1020257020873A KR20250103788A (ko) 2018-05-03 2019-04-23 페데스탈들을 위한 rf 접지 구성
CN201980029768.2A CN112106169B (zh) 2018-05-03 2019-04-23 用于基座的rf接地配置
CN202410624390.3A CN118448237A (zh) 2018-05-03 2019-04-23 用于基座的rf接地配置
JP2020561041A JP7408570B2 (ja) 2018-05-03 2019-04-23 ペデスタル用のｒｆ接地構成
CN202311588325.1A CN117612918A (zh) 2018-05-03 2019-04-23 用于基座的rf接地配置
JP2023214693A JP7761626B2 (ja) 2018-05-03 2023-12-20 ペデスタル用のｒｆ接地構成

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862666418P 2018-05-03 2018-05-03
US62/666,418 2018-05-03

Publications (1)

Publication Number Publication Date
WO2019212799A1 true WO2019212799A1 (en) 2019-11-07

Family

ID=68385096

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2019/028665 Ceased WO2019212799A1 (en) 2018-05-03 2019-04-23 Rf grounding configuration for pedestals

Country Status (7)

Country Link
US (3) US11569072B2 (https=)
JP (2) JP7408570B2 (https=)
KR (2) KR20250103788A (https=)
CN (3) CN118448237A (https=)
SG (1) SG11202010037QA (https=)
TW (3) TWI906133B (https=)
WO (1) WO2019212799A1 (https=)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11709156B2 (en) 2017-09-18 2023-07-25 Waters Technologies Corporation Use of vapor deposition coated flow paths for improved analytical analysis
US11709155B2 (en) 2017-09-18 2023-07-25 Waters Technologies Corporation Use of vapor deposition coated flow paths for improved chromatography of metal interacting analytes
US11918936B2 (en) 2020-01-17 2024-03-05 Waters Technologies Corporation Performance and dynamic range for oligonucleotide bioanalysis through reduction of non specific binding
US12181452B2 (en) 2017-09-18 2024-12-31 Waters Technologies Corporation Use of vapor deposition coated flow paths for improved chromatography of metal interacting analytes
US12180581B2 (en) 2017-09-18 2024-12-31 Waters Technologies Corporation Use of vapor deposition coated flow paths for improved chromatography of metal interacting analytes
US12352734B2 (en) 2020-09-24 2025-07-08 Waters Technologies Corporation Chromatographic hardware improvements for separation of reactive molecules

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10510575B2 (en) 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
KR102592699B1 (ko) * 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
JP7451540B2 (ja) 2019-01-22 2024-03-18 アプライド マテリアルズ インコーポレイテッド パルス状電圧波形を制御するためのフィードバックループ
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
US20220415625A1 (en) * 2019-12-06 2022-12-29 Lam Research Corporation Substrate supports with integrated rf filters
US11462389B2 (en) 2020-07-31 2022-10-04 Applied Materials, Inc. Pulsed-voltage hardware assembly for use in a plasma processing system
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
KR102427905B1 (ko) * 2020-12-21 2022-08-02 주식회사 테스 기판처리장치
CN114695051B (zh) * 2020-12-31 2025-02-21 拓荆科技股份有限公司 半导体处理设备及方法
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US12148595B2 (en) 2021-06-09 2024-11-19 Applied Materials, Inc. Plasma uniformity control in pulsed DC plasma chamber
US12525441B2 (en) 2021-06-09 2026-01-13 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US12525433B2 (en) 2021-06-09 2026-01-13 Applied Materials, Inc. Method and apparatus to reduce feature charging in plasma processing chamber
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
KR102919153B1 (ko) * 2021-06-21 2026-01-27 어플라이드 머티어리얼스, 인코포레이티드 프로세스 챔버들의 라디오 주파수 전극 임피던스들을 제어하기 위한 방법들 및 장치
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11776788B2 (en) 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12315732B2 (en) 2022-06-10 2025-05-27 Applied Materials, Inc. Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
US12586768B2 (en) 2022-08-10 2026-03-24 Applied Materials, Inc. Pulsed voltage compensation for plasma processing applications
US12272524B2 (en) 2022-09-19 2025-04-08 Applied Materials, Inc. Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics
US12111341B2 (en) 2022-10-05 2024-10-08 Applied Materials, Inc. In-situ electric field detection method and apparatus
CN118073160B (zh) * 2022-11-23 2025-09-16 北京北方华创微电子装备有限公司 射频功率的馈入结构及半导体工艺设备
US20240186123A1 (en) * 2022-12-02 2024-06-06 Applied Materials, Inc. Heated Pedestal With Impedance Matching Radio Frequency (RF) Rod
US20250062104A1 (en) * 2023-08-16 2025-02-20 Applied Materials, Inc. Heated pedestal with low impedance rf rod

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090053836A1 (en) * 2007-08-15 2009-02-26 Applied Materials Inc. Method of wafer level transient sensing, threshold comparison and arc flag generation/deactivation
US20140034612A1 (en) * 2008-07-23 2014-02-06 Applied Materials, Inc. Method of differential counter electrode tuning in an rf plasma reactor
US20150024515A1 (en) * 2013-07-19 2015-01-22 Advanced Energy Industries, Inc. Systems, methods, and apparatus for minimizing cross coupled wafer surface potentials
US20170069464A1 (en) * 2015-09-04 2017-03-09 Applied Materials, Inc. Method and apparatus of achieving high input impedance without using ferrite materials for rf filter applications in plasma chambers
US20170162417A1 (en) * 2015-12-07 2017-06-08 Applied Materials, Inc. Method and apparatus for clamping and declamping substrates using electrostatic chucks

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2685610B2 (ja) * 1989-12-07 1997-12-03 東京エレクトロン株式会社 プラズマ処理装置
US6063234A (en) * 1997-09-10 2000-05-16 Lam Research Corporation Temperature sensing system for use in a radio frequency environment
JP2000349579A (ja) * 1999-06-08 2000-12-15 Zanden Audio Syst:Kk デジタルオーディオ用帯域制限アナログフィルタ及びこれを用いた音声信号増幅装置
JP4456694B2 (ja) 1999-06-22 2010-04-28 東京エレクトロン株式会社 プラズマ処理装置
US6922324B1 (en) * 2000-07-10 2005-07-26 Christopher M. Horwitz Remote powering of electrostatic chucks
US6706138B2 (en) * 2001-08-16 2004-03-16 Applied Materials Inc. Adjustable dual frequency voltage dividing plasma reactor
JP2003143028A (ja) * 2001-11-01 2003-05-16 Sharp Corp 低雑音コンバータ
US6975841B2 (en) * 2001-11-12 2005-12-13 Matsushita Electric Industrial Co., Ltd. Diplexer, and high-frequency switch and antenna duplexer using the same
JP4515755B2 (ja) * 2003-12-24 2010-08-04 東京エレクトロン株式会社 処理装置
WO2005087974A2 (en) 2004-03-05 2005-09-22 Applied Materials, Inc. Cvd processes for the deposition of amorphous carbon films
US7109114B2 (en) 2004-05-07 2006-09-19 Applied Materials, Inc. HDP-CVD seasoning process for high power HDP-CVD gapfil to improve particle performance
TW200631095A (en) * 2005-01-27 2006-09-01 Koninkl Philips Electronics Nv A method of manufacturing a semiconductor device
US7312162B2 (en) 2005-05-17 2007-12-25 Applied Materials, Inc. Low temperature plasma deposition process for carbon layer deposition
US7323401B2 (en) 2005-08-08 2008-01-29 Applied Materials, Inc. Semiconductor substrate process using a low temperature deposited carbon-containing hard mask
US7790634B2 (en) 2006-05-30 2010-09-07 Applied Materials, Inc Method for depositing and curing low-k films for gapfill and conformal film applications
US20090236214A1 (en) * 2008-03-20 2009-09-24 Karthik Janakiraman Tunable ground planes in plasma chambers
TWI350655B (en) * 2008-03-20 2011-10-11 Ind Tech Res Inst Circuit device with inductor and capacitor in parallel connection
US20140069584A1 (en) * 2008-07-23 2014-03-13 Applied Materials, Inc. Differential counter electrode tuning in a plasma reactor with an rf-driven ceiling electrode
JP2010220139A (ja) * 2009-03-19 2010-09-30 Fujitsu Ltd フィルタ、フィルタリング方法、および通信装置
US8901015B2 (en) 2012-02-15 2014-12-02 Applied Materials, Inc. Method for depositing an inorganic encapsulating film
JP6027374B2 (ja) * 2012-09-12 2016-11-16 東京エレクトロン株式会社 プラズマ処理装置及びフィルタユニット
JP5737304B2 (ja) * 2013-01-18 2015-06-17 株式会社村田製作所 フィルタ回路
US10125422B2 (en) 2013-03-27 2018-11-13 Applied Materials, Inc. High impedance RF filter for heater with impedance tuning device
US10032608B2 (en) 2013-03-27 2018-07-24 Applied Materials, Inc. Apparatus and method for tuning electrode impedance for high frequency radio frequency and terminating low frequency radio frequency to ground
CN104753486B (zh) * 2013-12-31 2019-02-19 北京北方华创微电子装备有限公司 一种射频滤波器及半导体加工设备
KR102247560B1 (ko) * 2014-07-14 2021-05-03 삼성전자 주식회사 Rps에서의 플라즈마 생성방법, 및 그 플라즈마 생성방법을 포함한 반도체 소자 제조방법
JP6674800B2 (ja) * 2016-03-07 2020-04-01 日本特殊陶業株式会社 基板支持装置
US10435789B2 (en) * 2016-12-06 2019-10-08 Asm Ip Holding B.V. Substrate treatment apparatus
JP7235683B2 (ja) 2017-06-08 2023-03-08 アプライド マテリアルズ インコーポレイテッド ハードマスク及びその他のパターニング応用のための高密度低温炭素膜

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090053836A1 (en) * 2007-08-15 2009-02-26 Applied Materials Inc. Method of wafer level transient sensing, threshold comparison and arc flag generation/deactivation
US20140034612A1 (en) * 2008-07-23 2014-02-06 Applied Materials, Inc. Method of differential counter electrode tuning in an rf plasma reactor
US20150024515A1 (en) * 2013-07-19 2015-01-22 Advanced Energy Industries, Inc. Systems, methods, and apparatus for minimizing cross coupled wafer surface potentials
US20170069464A1 (en) * 2015-09-04 2017-03-09 Applied Materials, Inc. Method and apparatus of achieving high input impedance without using ferrite materials for rf filter applications in plasma chambers
US20170162417A1 (en) * 2015-12-07 2017-06-08 Applied Materials, Inc. Method and apparatus for clamping and declamping substrates using electrostatic chucks

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11709156B2 (en) 2017-09-18 2023-07-25 Waters Technologies Corporation Use of vapor deposition coated flow paths for improved analytical analysis
US11709155B2 (en) 2017-09-18 2023-07-25 Waters Technologies Corporation Use of vapor deposition coated flow paths for improved chromatography of metal interacting analytes
US12181452B2 (en) 2017-09-18 2024-12-31 Waters Technologies Corporation Use of vapor deposition coated flow paths for improved chromatography of metal interacting analytes
US12180581B2 (en) 2017-09-18 2024-12-31 Waters Technologies Corporation Use of vapor deposition coated flow paths for improved chromatography of metal interacting analytes
US12416607B2 (en) 2017-09-18 2025-09-16 Waters Technologies Corporation Use of vapor deposition coated flow paths for improved chromatography of metal interacting analytes
US12510520B2 (en) 2017-09-18 2025-12-30 Waters Technologies Corporation Use of vapor deposition coated flow paths for improved analytical analysis
US11918936B2 (en) 2020-01-17 2024-03-05 Waters Technologies Corporation Performance and dynamic range for oligonucleotide bioanalysis through reduction of non specific binding
US12352734B2 (en) 2020-09-24 2025-07-08 Waters Technologies Corporation Chromatographic hardware improvements for separation of reactive molecules

Also Published As

Publication number Publication date
CN117612918A (zh) 2024-02-27
US10923334B2 (en) 2021-02-16
TWI828686B (zh) 2024-01-11
KR102826471B1 (ko) 2025-06-26
US11569072B2 (en) 2023-01-31
CN112106169A (zh) 2020-12-18
US20190341227A1 (en) 2019-11-07
TWI906133B (zh) 2025-11-21
SG11202010037QA (en) 2020-11-27
TWI906714B (zh) 2025-12-01
JP2021523559A (ja) 2021-09-02
JP7408570B2 (ja) 2024-01-05
KR20200139842A (ko) 2020-12-14
KR20250103788A (ko) 2025-07-07
TW202416380A (zh) 2024-04-16
TW201947660A (zh) 2019-12-16
US20230170190A1 (en) 2023-06-01
CN112106169B (zh) 2024-06-04
TW202524582A (zh) 2025-06-16
CN118448237A (zh) 2024-08-06
JP2024041772A (ja) 2024-03-27
US20190341232A1 (en) 2019-11-07
JP7761626B2 (ja) 2025-10-28

Similar Documents

Publication Publication Date Title
US20230170190A1 (en) Rf grounding configuration for pedestals
KR102384836B1 (ko) 기판 처리 장치
TWI355015B (en) Dual frequency rf match
CN110416049B (zh) 可调节边缘射频等离子体分布的ccp刻蚀装置及其方法
KR102934462B1 (ko) 라디오 주파수 플라즈마 프로세싱 챔버에서의 왜곡 전류 완화
US10032608B2 (en) Apparatus and method for tuning electrode impedance for high frequency radio frequency and terminating low frequency radio frequency to ground
JP2002151429A (ja) Ｒｆプラズマ発生装置及びウエハの処理装置
US20230253232A1 (en) Substrate treatment apparatus
TW201342508A (zh) 用於靜電吸盤的射頻濾波器
US20250391642A1 (en) Impedance matching circuit, plasma process supply system and plasma process system
KR100648336B1 (ko) 플라즈마 챔버와 관련하여 사용되는 고정 임피던스 변형 네트워크 장치 및 방법
CN100550273C (zh) 双频rf匹配
US20170004925A1 (en) Power delivery systems and manufacturing equipment including a variable vacuum capacitor
US6879870B2 (en) Method and apparatus for routing harmonics in a plasma to ground within a plasma enhanced semiconductor wafer processing chamber
US20250233571A1 (en) Rf filter topology for substrate support assembly
CN110416052A (zh) 具有共振电路的晶圆支撑座
US12469679B2 (en) Substrate treating apparatus
TW202119465A (zh) 電感耦合等離子體系統
KR20150037621A (ko) 고 주파수 무선 주파수에 대한 전극 임피던스를 튜닝하고 저 주파수 무선 주파수를 접지로 종단하기 위한 장치 및 방법

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19796199

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2020561041

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20207034639

Country of ref document: KR

Kind code of ref document: A

122 Ep: pct application non-entry in european phase

Ref document number: 19796199

Country of ref document: EP

Kind code of ref document: A1

WWP Wipo information: published in national office

Ref document number: 1020257020873

Country of ref document: KR