WO2019194248A1 - プラズマ処理装置用部材およびこれを備えるプラズマ処理装置 - Google Patents
プラズマ処理装置用部材およびこれを備えるプラズマ処理装置 Download PDFInfo
- Publication number
- WO2019194248A1 WO2019194248A1 PCT/JP2019/014875 JP2019014875W WO2019194248A1 WO 2019194248 A1 WO2019194248 A1 WO 2019194248A1 JP 2019014875 W JP2019014875 W JP 2019014875W WO 2019194248 A1 WO2019194248 A1 WO 2019194248A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- pores
- film
- plasma processing
- processing apparatus
- less
- Prior art date
Links
- 239000011148 porous material Substances 0.000 claims abstract description 103
- 230000005484 gravity Effects 0.000 claims abstract description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims abstract description 7
- 150000004767 nitrides Chemical class 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 18
- 229910001404 rare earth metal oxide Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 33
- 229910052761 rare earth metal Inorganic materials 0.000 abstract description 19
- 239000002253 acid Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 96
- 239000000843 powder Substances 0.000 description 44
- 238000000034 method Methods 0.000 description 28
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 27
- 239000002245 particle Substances 0.000 description 27
- 239000012528 membrane Substances 0.000 description 16
- 229910052727 yttrium Inorganic materials 0.000 description 15
- 238000009826 distribution Methods 0.000 description 14
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 14
- 238000005498 polishing Methods 0.000 description 12
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 10
- 239000000919 ceramic Substances 0.000 description 10
- 239000011734 sodium Substances 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 239000007789 gas Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 239000011800 void material Substances 0.000 description 9
- 239000011575 calcium Substances 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 239000011224 oxide ceramic Substances 0.000 description 7
- 229910052574 oxide ceramic Inorganic materials 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000011777 magnesium Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 238000000560 X-ray reflectometry Methods 0.000 description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 4
- 239000004372 Polyvinyl alcohol Substances 0.000 description 4
- PSNPEOOEWZZFPJ-UHFFFAOYSA-N alumane;yttrium Chemical compound [AlH3].[Y] PSNPEOOEWZZFPJ-UHFFFAOYSA-N 0.000 description 4
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 4
- 229910052791 calcium Inorganic materials 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 239000008187 granular material Substances 0.000 description 4
- 239000011572 manganese Substances 0.000 description 4
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 4
- 229920002451 polyvinyl alcohol Polymers 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 239000006061 abrasive grain Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052692 Dysprosium Inorganic materials 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- 229910052772 Samarium Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910000019 calcium carbonate Inorganic materials 0.000 description 2
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 2
- 239000000292 calcium oxide Substances 0.000 description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 239000002270 dispersing agent Substances 0.000 description 2
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 2
- 238000003682 fluorination reaction Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 2
- 239000000347 magnesium hydroxide Substances 0.000 description 2
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000011812 mixed powder Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000005303 weighing Methods 0.000 description 2
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241000145637 Lepturus Species 0.000 description 1
- 241001422033 Thestylus Species 0.000 description 1
- CHBIYWIUHAZZNR-UHFFFAOYSA-N [Y].FOF Chemical compound [Y].FOF CHBIYWIUHAZZNR-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- AJXBBNUQVRZRCZ-UHFFFAOYSA-N azanylidyneyttrium Chemical compound [Y]#N AJXBBNUQVRZRCZ-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000010191 image analysis Methods 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- -1 yttrium compound Chemical class 0.000 description 1
- 229940105963 yttrium fluoride Drugs 0.000 description 1
- RBORBHYCVONNJH-UHFFFAOYSA-K yttrium(iii) fluoride Chemical compound F[Y](F)F RBORBHYCVONNJH-UHFFFAOYSA-K 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/10—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
- C04B35/111—Fine ceramics
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5025—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with ceramic materials
- C04B41/5045—Rare-earth oxides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5053—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials non-oxide ceramics
- C04B41/5055—Fluorides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5053—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials non-oxide ceramics
- C04B41/5062—Borides, Nitrides or Silicides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/85—Coating or impregnation with inorganic materials
- C04B41/87—Ceramics
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/89—Coating or impregnation for obtaining at least two superposed coatings having different compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5846—Reactive treatment
- C23C14/5853—Oxidation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3206—Magnesium oxides or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3208—Calcium oxide or oxide-forming salts thereof, e.g. lime
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3418—Silicon oxide, silicic acids, or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
- C04B2235/5436—Particle size related information expressed by the size of the particles or aggregates thereof micrometer sized, i.e. from 1 to 100 micron
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
- C04B2235/5445—Particle size related information expressed by the size of the particles or aggregates thereof submicron sized, i.e. from 0,1 to 1 micron
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5463—Particle size distributions
- C04B2235/5472—Bimodal, multi-modal or multi-fraction
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/72—Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
Definitions
- the present disclosure relates to a member for a plasma processing apparatus and a plasma processing apparatus including the same.
- a member for a plasma processing apparatus including a base material and a film made of yttrium oxide on the base material has been used.
- Patent Document 1 proposes an inner member of a plasma processing container in which the surface of a base material is coated with a Y 2 O 3 sprayed coating having a purity of 95% by mass or more. Yes.
- the member for a plasma processing apparatus of the present disclosure includes a base material and a rare earth element oxide, fluoride, oxyfluoride, or nitride film on at least a part of the base material.
- the film has an arithmetic average roughness Ra of 0.01 ⁇ m or more and 0.1 ⁇ m or less on a surface exposed to plasma, and has a plurality of pores on the surface, and an average distance between centers of gravity of adjacent pores
- the value obtained by subtracting the average value of the equivalent circle diameter of the pores from the value is 28 ⁇ m or more and 48 ⁇ m or less.
- the plasma processing apparatus of the present disclosure includes the above-described member for a plasma processing apparatus.
- the plasma processing apparatus member 1 of the present disclosure includes a base material 2, a rare earth element oxide, fluoride, oxyfluoride, or nitride film 3 on at least a part of the base material 2. Is provided.
- FIG. 1B shows an example in which one upper surface 2 a of the base material 2 is covered with a film 3.
- the surface of the film 3 exposed to plasma (the upper surface in FIG. 1B, hereinafter may be simply referred to as the surface) has an arithmetic average roughness Ra of 0.01 ⁇ m or more and 0.1 ⁇ m or less.
- the surface has a plurality of pores 4.
- FIG. 1A shows an example having a plurality of pores 4a, 4b,. Note that the surface of the film 3 exposed to plasma includes a surface that is exposed to plasma and newly exposed as the thickness of the film decreases.
- the arithmetic average roughness Ra may be measured according to JIS B 0601-2013. Specifically, if using a surface roughness measuring machine (surf coder) SE500 manufactured by Kosaka Laboratory, the radius of the stylus is 5 ⁇ m, the measurement length is 2.5 mm, and the cut-off value is 0.8 mm. Good.
- surf coder surface roughness measuring machine
- FIG. 1B it describes in order to clarify the presence of the film
- the film 3 is an oxide, fluoride, oxyfluoride or nitride of a rare earth element (hereinafter, oxide, fluoride, oxyfluoride and nitride are collectively referred to as a compound), and is used as a rare earth element.
- a rare earth element Yttrium (Y), cerium (Ce), samarium (Sm), gadolinium (Gd), dysprosium (Dy), erbium (Er), ytterbium (Yb) and the like.
- Yttrium Y
- Ce cerium
- Sm samarium
- Gd gadolinium
- Dy dysprosium
- Er erbium
- Yb ytterbium
- composition formula of the yttrium compound is, for example, Y 2 O 3-x (0 ⁇ x ⁇ 1), YF 3 , YOF, Y 5 O 4 F 7 , Y 5 O 6 F 7 , Y 6 O 5 F 8 , Y 7 O 6 F 9 , Y 17 O 14 F 23 or YN may be mentioned.
- the film 3 does not contain any compound other than the rare earth element, and in addition to the rare earth element, fluorine (F), sodium (Na), magnesium, etc., depending on the purity of the target used when forming the film 3 and the device configuration.
- F fluorine
- Na sodium
- magnesium etc.
- the components constituting the film 3 may be identified using a thin film X-ray diffractometer.
- the base material 2 examples include quartz, aluminum having a purity of 99.999% (5N) or higher, aluminum alloys such as an aluminum 6061 alloy, aluminum nitride ceramics, and aluminum oxide ceramics.
- the aluminum nitride ceramics and the aluminum oxide ceramics are, for example, aluminum oxide ceramics, an oxidation value that is a value obtained by converting Al into Al 2 O 3 out of a total of 100% by mass of the components constituting the substrate 2. Ceramics with an aluminum content of 90% by mass or more.
- the aluminum oxide ceramics may contain magnesium oxide, calcium oxide, silicon oxide and the like in addition to aluminum oxide.
- the membrane 3 has a plurality of pores, and a value A obtained by subtracting the average value of the equivalent circle diameter of the pores from the average value of the distance between the centers of gravity of the adjacent pores is 28 ⁇ m or more and 48 ⁇ m or less.
- the member 1 for a plasma processing apparatus that satisfies the above configuration has a small number of particles generated from inside the pores.
- the microcracks are dispersed so that they can be blocked by nearby pores. Few.
- the area occupation ratio of the plurality of pores in the film 3 may be 1.5 area% or more and 6 area% or less.
- the area occupation ratio of the pores is 1.5 area% or more and 6 area% or less, the surface exposed to plasma (including the surface exposed to plasma and newly exposed by decreasing the film thickness) is microscopic. Even if cracks occur, the extension of the microcracks can be blocked by the pores, so the number of particles accompanying the microcracks is small. In addition, since the area ratio of pores on the surface exposed to plasma is low, the number of particles generated from the inside of the pores is further reduced.
- the average value of the spheroidization ratio of the pores in the film 3 may be 60% or more.
- the spheroidization rate of the pores is within this range, it is difficult for residual stress to accumulate in the peripheral portion of the pores, so that particles are hardly generated from the peripheral portion of the pores when exposed to plasma.
- the spheroidization rate of the pores is obtained by diverting a ratio defined by the graphite area method, and is defined by the following formula (1).
- Porosity of spheroids (%) (actual area of pores) / (area of minimum circumscribed circle of pores) ⁇ 100 (1)
- the average value of the spheroidization ratio of pores is preferably 62% or more.
- the average value of the distance between the centers of gravity of the pores, the average value of the equivalent circle diameter of the pores, the area occupancy rate, and the spheroidization rate can be obtained by the following methods.
- the surface of the film is observed at a magnification of 100 times using a digital microscope.
- the area is 7.68 mm 2 (the length in the horizontal direction is 3.2 mm and the length in the vertical direction is 2.4 mm).
- Image observation software “A Image-kun (ver2.52)” registered trademark, manufactured by Asahi Kasei Engineering Co., Ltd.
- later image analysis software “A Image-kun” In this case, the average value of the distance between the centroids of the pores can be obtained by a method called the centroid distance method of dispersion measurement using Asahi Kasei Engineering Co., Ltd. image analysis software.
- the average value of the circle equivalent diameter of the pores, the area occupation ratio, and the spheroidization ratio are obtained. Can be sought. Note that the region corresponding to the pores in the observed image can be identified because it appears as a dark region.
- a threshold that is an index indicating the brightness of an image is 140, the brightness is dark, the small figure removal area is 1 ⁇ m 2 , and a noise removal filter is provided.
- the threshold value is 140, but the threshold value may be adjusted according to the brightness of the observation image, the brightness is dark, the binarization method is manual, and the small figure removal area is 1 ⁇ m 2.
- the threshold value may be adjusted so that the marker whose size changes depending on the threshold value in the observation image matches the shape of the pores, with the noise removal filter.
- the kurtosis Ku1 of the circle-equivalent diameter of the plurality of pores in the film 3 may be 0.5 or more and 2 or less.
- the kurtosis Ku1 of the equivalent circle diameter of the pores is within this range, the distribution of the equivalent circle diameter of the pores is narrow, and there are few abnormally large pore equivalent diameter pores, so that it has an effect of suppressing the extension of microcracks.
- the number of particles generated from the inside of the pores is small, and the plasma resistance is excellent.
- polishing is performed after film formation, the film 3 satisfying the above configuration has less uneven wear, so that a desired surface property can be formed with a minimum polishing amount.
- the kurtosis Ku1 is preferably 1.3 or more and 1.9 or less.
- the average value of the equivalent circle diameter of the pores satisfies the above-described range.
- the kurtosis Ku1 is an index (statistic) indicating how much the distribution peak and tail are different from the normal distribution.
- the peak has a sharp peak and a long thick tail.
- the distribution is a normal distribution, and when the kurtosis Ku1 ⁇ 0, the distribution is a distribution having a rounded peak and a short thin tail.
- the kurtosis Ku1 of the equivalent circle diameter of the pores may be obtained by using a function Kurt provided in Excel (registered trademark, Microsoft Corporation).
- the skewness Sk1 of the circle-equivalent diameter of the plurality of pores in the film 3 may be 3 or more and 5.6 or less.
- the skewness Sk1 of the equivalent circle diameter of the pores is within this range, the average value of the equivalent circle diameter of the pores is small, and since there are few abnormally large pore equivalent diameters, the microcrack expansion suppressing effect is obtained.
- the number of particles generated from the inside of the pores is small, and the plasma resistance is excellent.
- the film 3 satisfying the above configuration has less uneven wear, so that a desired surface property can be formed with a minimum polishing amount.
- the skewness Sk1 is preferably 3.2 or more and 5.3 or less.
- the skewness Sk1 is an index (statistic) indicating how much the distribution is distorted from the normal distribution, that is, the symmetry of the distribution.
- the skewness Sk1 ⁇ 0 the distribution skirt is directed to the left.
- the skewness Sk1 of the equivalent circle diameter of the pores may be obtained by using a function SKEW provided in Excel (registered trademark, Microsoft® Corporation).
- the kurtosis Ku2 of the distance between the centers of gravity of the pores in the film 3 may be 0.1 or more and 0.5 or less.
- the kurtosis Ku2 of the center-to-center distance between the pores is within this range, the distribution of the center-to-center distance is narrow, and the abnormally large center-to-center distance is small. Can be suppressed.
- the skewness Sk2 of the distance between the centers of gravity of the pores in the film 3 may be 0.5 or more and 1 or less.
- the relative density of the film 3 may be 98% or more, particularly 99% or more. When the relative density is within this range, since the film 3 is dense, even if the film 3 is exposed to plasma and the thickness of the film 3 is reduced, generation of particles can be suppressed.
- the relative density of the film 3 may be obtained by first obtaining an actual density by an X-ray reflectometry (XRR) using a thin film X-ray diffractometer and obtaining a ratio of the actual density to the theoretical density.
- XRR X-ray reflectometry
- the occupied area ratio of the pores is preferably 1.5 area% or more and 6 area% or less.
- the relative density of the film 3 is preferably 98% or more. It seems that there is no correlation between the occupied area ratio of the pores and the relative density of the membrane 3. This is because the occupied area ratio of pores is image analysis, whereas the relative density of the film uses XRR. XRR is measured by transmitting X-rays through the film 3. If a place with pores and a place without pores overlap in the X-ray transmission direction, it may be determined that there is no pore. For this reason, the relative density of the film
- the plasma processing apparatus member 1 of the present disclosure hardly generates particles, the plasma processing apparatus including the plasma processing apparatus member 1 is excellent in reliability.
- each first subcomponent powder is weighed.
- the aluminum oxide A powder and the aluminum oxide B powder have a mass ratio of 40:60 to 60:40, and among the 100 mass% of the components constituting the obtained alumina ceramic, Al is Al. Weigh so that the content in terms of 2 O 3 is 99.4% by mass or more to obtain aluminum oxide powder.
- the amount of Na in the aluminum oxide mixed powder is first grasped, and the amount of Na in the case of alumina ceramics is converted to Na 2 O, and this converted value and the first Weighing is performed so that the ratio of the component (in this example, Si, Ca, etc.) constituting the subcomponent powder to a value converted to an oxide is 1.1 or less.
- the slurry is spray-granulated to obtain granules, and then the granules are formed into a predetermined shape by a powder press forming apparatus, an isostatic press forming apparatus, etc., and subjected to cutting as necessary to form a substrate-like formed body Get.
- the surface on the side on which the film 3 is formed has diamond abrasive grains having an average grain size of 1 ⁇ m or more and 5 ⁇ m or less.
- the substrate 5 can be obtained by polishing using a polishing disk made of tin.
- FIG. 2 is a schematic diagram showing the sputtering apparatus 20.
- the sputtering apparatus 20 includes a chamber 15, a gas supply source 13 connected to the chamber 15, an anode 14 and a cathode 12 located in the chamber 15, and a cathode 12.
- a target 11 connected to the side is provided.
- the base material 5 obtained by the above-described method is installed on the anode 14 side in the chamber 15. Further, a target 11 mainly composed of a rare earth element, here metal yttrium, is installed on the cathode 12 side on the opposite side in the chamber 15. In this state, the inside of the chamber 15 is decompressed by the exhaust pump, and argon and oxygen are supplied as the gas G from the gas supply source 13.
- an electric field is applied between the anode 14 and the cathode 12 by a power source to generate plasma P and perform sputtering, thereby forming a metal yttrium film on the surface of the substrate 5.
- the thickness in one formation is sub-nm.
- an oxidation process of the metal yttrium film is performed.
- the plasma of this indication provided with the film
- a member for a processing apparatus can be obtained.
- the area occupation ratio of the plurality of pores is 1.5 area% or more and 6 area% or less
- the area occupation ratio of the pores on the surface of the base material facing the film is 1 area. % Or more and 5 area% or less.
- the average value of the spheroidization rate of the plurality of pores is 60% or more
- the average value of the spheroidization rate of the pores on the surface of the substrate facing the film is 62% or more. Just keep it.
- the kurtosis Ku of the circle equivalent diameter of the plurality of pores is 0.5 or more and 2 or less
- the kurtosis of the circle equivalent diameter of the pores on the surface of the base material facing the film Ku should be 0.6 or more and 1.8 or less.
- the skewness of the circle equivalent diameter of the pores on the surface of the substrate facing the film is obtained. It is sufficient to set Sk to be 3.1 or more and 5.4 or less.
- the oxidation process may be replaced with a fluorination process.
- the formation of the metal yttrium film, the oxidation process and the fluorination process may be alternately performed in this order.
- the oxidation process may be replaced with a nitridation process.
- the power input from the power source may be either high frequency power or direct current power.
- the member for a plasma processing apparatus of the present disclosure obtained by the manufacturing method described above can reduce both the number of particles generated from the inside of pores and the number of particles generated due to the extension of microcracks. It may be a high frequency transmitting window member for transmitting a high frequency for generating, a shower plate for distributing plasma generating gas, a susceptor for mounting a semiconductor wafer, and the like.
- FIG. 3A is a photograph of a surface exposed to plasma of a member for a plasma processing apparatus according to another embodiment of the present disclosure taken with an optical microscope
- FIG. 3B is for the plasma processing apparatus according to another embodiment of the present disclosure
- FIG. 3C is a cross-sectional view schematically illustrating another example of a member for a plasma processing apparatus according to another embodiment of the present disclosure.
- the plasma processing apparatus member 30 of the present disclosure includes a base material 25 and a rare earth element oxide film 23 on at least a part of the base material 25.
- the surface of the film 3 exposed to plasma has a plurality of open pores 24.
- FIGS. 3A to 3C show an example having a plurality of open pores 24a, 24b,. Further, an example in which a plurality of closed pores 26 are provided inside the film 23 is shown.
- the film 3 includes a first layer (lower layer) 21 located on the base material 25 and a second layer (upper layer) 22 located on the first layer (lower layer) 21. Is shown.
- Examples of the base material 25 include quartz, aluminum having a purity of 99.999% (5N) or more, aluminum alloys such as an aluminum 6061 alloy, aluminum nitride ceramics, and aluminum oxide ceramics.
- the aluminum nitride ceramic is a ceramic having an aluminum nitride content of 90% by mass or more, which is a value obtained by converting Al into AlN, out of a total of 100% by mass of the components constituting the substrate 5.
- the aluminum oxide ceramic is a ceramic having a content of aluminum oxide of 90% by mass or more, which is a value obtained by converting Al into Al 2 O 3 out of a total of 100% by mass of the components constituting the substrate 5.
- the aluminum oxide ceramics may contain magnesium oxide, calcium oxide, silicon oxide and the like in addition to aluminum oxide.
- the film 23 is an oxide of a rare earth element.
- the rare earth element include yttrium (Y), cerium (Ce), samarium (Sm), gadolinium (Gd), dysprosium (Dy), erbium (Er), and ytterbium. (Yb) etc. are mentioned.
- Y yttrium
- Ce cerium
- Sm samarium
- Gd gadolinium
- Dy dysprosium
- Er erbium
- Yb ytterbium
- the film 23 does not include any oxide other than rare earth elements, and fluorine (F), sodium (Na), other than rare earth elements, depending on the purity of the target used when forming the film 3 and the device configuration.
- Magnesium (Mg), aluminum (Al), silicon (Si), phosphorus (P), sulfur (S), chlorine (Cl), potassium (K), calcium (Ca), titanium (Ti), chromium (Cr), Manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), zinc (Zn), strontium (Sr), and the like may be included.
- the thickness of the film 23 is 10 ⁇ m or more and 200 ⁇ m or less, and the micro Vickers hardness Hmv of the film 23 is 7.5 GPa or more.
- the main component of the film 23 may be, for example, yttrium oxide represented by Y 2 O 3-x (0 ⁇ x ⁇ 1) from which oxygen is lost when the rare earth element is yttrium. Is represented by this composition formula, it has semiconductivity, so that charging on the surface of the film 23 can be suppressed.
- the components constituting the substrate 25 and the film 23 can be identified by an X-ray diffractometer using CuK ⁇ rays, and the content of each component is, for example, an ICP (Inductively Coupled Plasma) emission spectroscopic analyzer. Alternatively, it can be obtained by a fluorescent X-ray analyzer.
- ICP Inductively Coupled Plasma
- the membrane 23 has an area occupation ratio of the open pores 24 on the surface exposed to plasma of 8 area% or less, and an average diameter of the open pores 24 is 8 ⁇ m or less.
- the member 30 for plasma processing apparatus of this indication is excellent in plasma resistance.
- the number of particles generated from the inside of the open pores 24 is small and the size of the generated particles is small, it can be used for a long period of time, and is provided with the plasma processing apparatus member 30 of the present disclosure.
- the device is excellent in reliability.
- the surface exposed to the plasma is used as the measurement surface. Then, using a digital microscope (VHX-5000, manufactured by Keyence Corporation), the epi-illumination is set to coaxial epi-illumination, the illumination intensity is set to 255, and the ZS20 lens corresponding to the objective lens is set to 100 times.
- VHX-5000 digital microscope
- the brightness is selected in the automatic area measurement mode in a range where the area is 7.223 mm 2 (the length in the horizontal direction is 3.1 mm, the length in the vertical direction is 2.33 mm), and a dark region (open pores) 24), the average diameter and area occupancy of the open pores 24 of the membrane 23 can be calculated by measuring the threshold value, for example, by setting it to ⁇ 20.
- the threshold value may be set as appropriate according to the brightness of the dark area.
- the area occupation ratio of the open pores 24 on the surface exposed to the plasma may be 4 area% or less, and the average diameter of the open pores 24 may be 4 ⁇ m or less.
- the area where the average diameter of the open pores 24 is 8 ⁇ m or less and the area occupation ratio of the open pores 24 is 8 area% or less occupies 5% or more from the surface with respect to the thickness of the membrane 3 It may be.
- the area occupancy of the open pores 24 is applied only to the surface exposed to plasma.
- the pores appearing on the surface are also opened by polishing the surface. The pores 24 are used.
- this region corresponds to the second layer 22.
- the average diameter of the open pores 24 was 8 ⁇ m or less, and the area occupation ratio of the open pores 24 was 8 area% or less, not only on the surface but also when exposed from the surface to the inside. Also on the surface, the number of particles generated from the inside of the open pores 24 is small, and the size of the generated particles is small. Therefore, it is possible to perform the plasma treatment satisfactorily over a long period of time.
- the film 23 may include a void portion 28 extending in the thickness direction from the concave portion 27 located on the surface of the base material 25 facing the film 23, and the tip of the void portion 28 may be blocked within the film 23.
- the concave portion 27 refers to open pores or voids on the surface of the base material 25 facing the film 23, and is the surface of the base material 25 before the film 23 is formed.
- the film 23 includes the void portion 28, it is possible to suppress the accumulation of residual stress even if the temperature rise and fall are repeated, and the void portion 8 does not communicate with the outside. There is no discharge outside the membrane 23.
- the width of the void portion 28 as viewed in section along the thickness direction of the film 23 may be narrower on the surface side of the film 23 than on the concave portion 27 side of the substrate 25.
- the surface of the film 23 is more on the surface side than the recess 27 side of the base material 25. It is more difficult for the particles in the gap 28 to be discharged out of the film 23 than when the width is large.
- the base material 25 is made of ceramics whose main component is aluminum oxide.
- the base material 25 is formed on the covering surface of the base material 25 facing the film 23 by yttrium aluminum garnet (YAG) or yttrium aluminum monoclinic (YAM). ) And yttrium aluminum perovskite (YAP).
- each first subcomponent powder is weighed.
- the aluminum oxide A powder and the aluminum oxide B powder have a mass ratio of 40:60 to 60:40, and among the 100 mass% of the components constituting the obtained alumina ceramic, Al is Al. Weigh so that the content in terms of 2 O 3 is 99.4% by mass or more to obtain aluminum oxide powder.
- the amount of Na in the aluminum oxide mixed powder is first grasped, and the amount of Na in the case of alumina ceramics is converted to Na 2 O, and this converted value and the first Weighing is performed so that the ratio of the component (in this example, Si, Ca, etc.) constituting the subcomponent powder to a value converted to an oxide is 1.1 or less.
- the slurry is spray-granulated to obtain granules, and then the granules are formed into a predetermined shape by a powder press forming apparatus, an isostatic press forming apparatus, etc., and subjected to cutting as necessary to form a substrate-like formed body Get.
- the substrate 25 can be obtained by polishing using a polishing disk made of tin.
- FIG. 4 is a schematic diagram showing the sputtering apparatus 40.
- the sputtering apparatus 40 includes a chamber 35, a gas supply source 33 connected to the chamber 35, an anode 34 and a cathode 32 located in the chamber 35, and a cathode 32.
- a target 11 connected to the side is provided.
- the base material 25 obtained by the above-described method is installed on the anode 34 side in the chamber 35. Further, a target 31 mainly composed of a rare earth element, here metal yttrium, is disposed on the cathode 32 side on the opposite side in the chamber 35. In this state, the inside of the chamber 15 is decompressed by the exhaust pump, and argon and oxygen are supplied as the gas G from the gas supply source 33.
- an electric field is applied between the anode 34 and the cathode 32 by a power source to generate plasma P and perform sputtering, thereby forming a metal yttrium film on the surface of the substrate 25.
- the thickness in one formation is sub-nm.
- an oxidation process of the metal yttrium film is performed.
- the first layer 21 can be obtained by alternately performing the formation of the metal yttrium film and the oxidation step so that the total thickness of the film is 10 ⁇ m or more and 200 ⁇ m or less.
- a member for a plasma processing apparatus including at least one of yttrium aluminum garnet (YAG), yttrium aluminum monoclinic (YAM), and yttrium aluminum perovskite (YAP) on the surface of the substrate 25 facing the film.
- YAG yttrium aluminum garnet
- YAM yttrium aluminum monoclinic
- YAP yttrium aluminum perovskite
- the base material 25 on which the first layer is formed is taken out from the chamber 35, and the film formation surface of the first layer 21 is smoothed.
- the smoothing treatment is, for example, polishing, and the film-forming surface of the first layer 21 is polished using diamond abrasive grains having an average particle diameter of 1 ⁇ m or more and 5 ⁇ m or less and a polishing disk made of tin.
- the treated surface may be used.
- the tip of the void portion 28 is closed in the film 23.
- membrane is formed with the sputter apparatus 40 shown in FIG.
- the width of the void portion 28 as viewed in cross section is narrower on the surface side of the film 23 than on the concave portion 27 side of the substrate 5, and the average diameter of the open pores is 0.1 ⁇ m or more on the film formation surface of the first layer 21.
- the second layer 22 to be described later is formed by polishing to 5 ⁇ m or less, the void portion 28 is closed in the film 23.
- the member 30 for plasma processing apparatuses of this indication is formed by forming the 2nd layer 22 which has yttrium oxide as a main component on the processing surface of the 1st layer 21 by the same method as the method of obtaining the 1st layer 21. Can be obtained.
- the plasma processing apparatus member 30 of the present disclosure obtained by the manufacturing method described above can reduce the number of particles generated from the inside of the open pores and can reduce the size of the generated particles. It may be a high-frequency transmission window member that transmits high-frequency waves for generating plasma, a shower plate for distributing plasma generation gas, a susceptor for mounting a semiconductor wafer, and the like.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
気孔の球状化率(%)=(気孔の実面積)/(気孔の最少外接円の面積)×100(1)特に、気孔の球状化率の平均値は62%以上であるとよい。
2 :基材
3 :膜
4 :気孔
11:ターゲット
12:陰極
13:ガス供給源
14:陽極
15:チャンバ
20:スパッタ装置
Claims (7)
- 基材と、
該基材上の少なくとも一部に、希土類元素の酸化物、弗化物、酸弗化物または窒化物の膜とを備え、
該膜は、プラズマに曝される表面の算術平均粗さRaが0.01μm以上0.1μm以下であって、複数の気孔を前記表面に有し、隣り合う前記気孔同士の重心間距離の平均値から前記気孔の円相当径の平均値を差し引いた値が28μm以上48μm以下である、プラズマ処理装置用部材。 - 複数の前記気孔の面積占有率が、1.5面積%以上6面積%以下である、請求項1に記載のプラズマ処理装置用部材。
- 複数の前記気孔の球状化率の平均値は、60%以上である、請求項1乃至または請求項2に記載のプラズマ処理装置用部材。
- 複数の前記気孔の円相当径の尖度Ku1は、0.5以上2以下である、請求項1乃至請求項3のいずれかに記載のプラズマ処理装置用部材。
- 複数の前記気孔の円相当径の歪度Sk1は、3以上5.6以下である、請求項1乃至請求項4のいずれかに記載のプラズマ処理装置用部材。
- 前記気孔同士の重心間距離の尖度Ku2が0.1以上0.5以下である、請求項1に記載のプラズマ処理装置用部材。
- 請求項1乃至請求項6のいずれかに記載のプラズマ処理装置用部材を備える、プラズマ処理装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020207027550A KR102489368B1 (ko) | 2018-04-03 | 2019-04-03 | 플라즈마 처리 장치용 부재 및 이것을 구비하는 플라즈마 처리 장치 |
JP2020512302A JP7048726B2 (ja) | 2018-04-03 | 2019-04-03 | プラズマ処理装置用部材およびこれを備えるプラズマ処理装置 |
US17/043,902 US11521835B2 (en) | 2018-04-03 | 2019-04-03 | Plasma processing device member and plasma processing device provided with same |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018-071705 | 2018-04-03 | ||
JP2018071705 | 2018-04-03 | ||
JP2018-127639 | 2018-07-04 | ||
JP2018127639 | 2018-07-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2019194248A1 true WO2019194248A1 (ja) | 2019-10-10 |
Family
ID=68100326
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2019/014875 WO2019194248A1 (ja) | 2018-04-03 | 2019-04-03 | プラズマ処理装置用部材およびこれを備えるプラズマ処理装置 |
PCT/JP2019/014874 WO2019194247A1 (ja) | 2018-04-03 | 2019-04-03 | プラズマ処理装置用部材およびこれを備えるプラズマ処理装置ならびにプラズマ処理装置用部材の製造方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2019/014874 WO2019194247A1 (ja) | 2018-04-03 | 2019-04-03 | プラズマ処理装置用部材およびこれを備えるプラズマ処理装置ならびにプラズマ処理装置用部材の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US11521835B2 (ja) |
JP (2) | JP7048725B2 (ja) |
KR (2) | KR102488234B1 (ja) |
TW (2) | TWI715004B (ja) |
WO (2) | WO2019194248A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020116384A1 (ja) * | 2018-12-05 | 2020-06-11 | 京セラ株式会社 | プラズマ処理装置用部材およびこれを備えるプラズマ処理装置 |
WO2020218265A1 (ja) * | 2019-04-26 | 2020-10-29 | 京セラ株式会社 | プラズマ処理装置用部材およびプラズマ処理装置 |
WO2022210575A1 (ja) * | 2021-03-31 | 2022-10-06 | 京セラ株式会社 | 膜付部材およびこれを備えるプラズマ処理装置 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113808898B (zh) * | 2020-06-16 | 2023-12-29 | 中微半导体设备(上海)股份有限公司 | 耐等离子体腐蚀零部件和反应装置及复合涂层形成方法 |
CN114068276A (zh) * | 2020-08-05 | 2022-02-18 | 中微半导体设备(上海)股份有限公司 | 半导体零部件、等离子体反应装置和涂层形成方法 |
KR20230102468A (ko) * | 2021-12-30 | 2023-07-07 | 주식회사 원익큐엔씨 | 오염입자 발생 저감을 극대화 하는 반도체 장비 불화대상물의 불화 가공 방법 및 이에 의해 불화 가공된 부품 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008239414A (ja) * | 2007-03-28 | 2008-10-09 | Toto Ltd | セラミック部材および耐蝕性部材 |
WO2019066033A1 (ja) * | 2017-09-28 | 2019-04-04 | 京セラ株式会社 | プラズマ処理装置用部材およびプラズマ処理装置 |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000239060A (ja) * | 1998-12-21 | 2000-09-05 | Shin Etsu Chem Co Ltd | 複合酸化物部材 |
TW503449B (en) | 2000-04-18 | 2002-09-21 | Ngk Insulators Ltd | Halogen gas plasma-resistive members and method for producing the same, laminates, and corrosion-resistant members |
JP4540221B2 (ja) * | 2000-04-21 | 2010-09-08 | 日本碍子株式会社 | 積層体、耐蝕性部材および耐ハロゲンガスプラズマ用部材 |
JP4688307B2 (ja) | 2000-07-11 | 2011-05-25 | コバレントマテリアル株式会社 | 半導体製造装置用耐プラズマ性部材 |
JP4062236B2 (ja) * | 2002-10-31 | 2008-03-19 | 東ソー株式会社 | 島状突起修飾部品及びその製造方法並びにそれを用いた装置 |
JP4606121B2 (ja) * | 2004-01-29 | 2011-01-05 | 京セラ株式会社 | 耐食膜積層耐食性部材およびその製造方法 |
JP2005217349A (ja) * | 2004-02-02 | 2005-08-11 | Toto Ltd | 耐プラズマ性を有する半導体製造装置用部材およびその作製方法 |
JP3864958B2 (ja) | 2004-02-02 | 2007-01-10 | 東陶機器株式会社 | 耐プラズマ性を有する半導体製造装置用部材およびその作製方法 |
US7968205B2 (en) * | 2005-10-21 | 2011-06-28 | Shin-Etsu Chemical Co., Ltd. | Corrosion resistant multilayer member |
JP5159204B2 (ja) * | 2006-10-31 | 2013-03-06 | 株式会社フジミインコーポレーテッド | 溶射用粉末、溶射皮膜の形成方法、耐プラズマ性部材、及びプラズマ処理チャンバー |
JP5199599B2 (ja) * | 2007-04-10 | 2013-05-15 | 株式会社フェローテックセラミックス | イットリア焼結体およびプラズマプロセス装置用部材 |
JP2009161846A (ja) | 2007-12-10 | 2009-07-23 | Densho Engineering Co Ltd | プラズマ処理容器内部材の製造方法 |
JP2009287058A (ja) | 2008-05-27 | 2009-12-10 | Hakumaku Process:Kk | 直流反応性対向ターゲット方式スパッタリング成膜方法、その成膜方法によって形成される純イットリア耐食膜、及び耐食性石英構成体 |
US8206829B2 (en) * | 2008-11-10 | 2012-06-26 | Applied Materials, Inc. | Plasma resistant coatings for plasma chamber components |
US20120196139A1 (en) * | 2010-07-14 | 2012-08-02 | Christopher Petorak | Thermal spray composite coatings for semiconductor applications |
JP6084464B2 (ja) * | 2010-12-01 | 2017-02-22 | 株式会社東芝 | プラズマエッチング装置用部品およびプラズマエッチング装置用部品の製造方法 |
KR101637801B1 (ko) * | 2012-05-22 | 2016-07-07 | 가부시끼가이샤 도시바 | 플라즈마 처리 장치용 부품 및 플라즈마 처리 장치용 부품의 제조 방법 |
CN103794460B (zh) * | 2012-10-29 | 2016-12-21 | 中微半导体设备(上海)有限公司 | 用于半导体装置性能改善的涂层 |
JP5578383B2 (ja) * | 2012-12-28 | 2014-08-27 | Toto株式会社 | 耐プラズマ性部材 |
KR101807444B1 (ko) * | 2013-11-29 | 2017-12-08 | 가부시끼가이샤 도시바 | 플라즈마 장치용 부품 및 그 제조 방법 |
US20160258064A1 (en) * | 2015-03-06 | 2016-09-08 | Applied Materials, Inc. | Barrier anodization methods to develop aluminum oxide layer for plasma equipment components |
KR101817779B1 (ko) | 2015-12-31 | 2018-01-11 | (주)코미코 | 내플라즈마 코팅막 및 이의 형성방법 |
TWI721216B (zh) * | 2016-10-13 | 2021-03-11 | 美商應用材料股份有限公司 | 用於電漿處理裝置中的腔室部件、包含其之裝置及製造其之方法 |
JP2018070413A (ja) * | 2016-10-28 | 2018-05-10 | 京セラ株式会社 | 摺動部品およびフォーセットバルブ |
KR102431547B1 (ko) * | 2016-11-02 | 2022-08-11 | 모간 어드밴스드 세라믹스, 인코포레이티드 | 반도체 챔버 장치용의 이트륨 알루미늄 실리케이트 유리 세라믹 코팅제 |
US11639547B2 (en) * | 2018-05-03 | 2023-05-02 | Applied Materials, Inc. | Halogen resistant coatings and methods of making and using thereof |
-
2019
- 2019-04-02 TW TW108111704A patent/TWI715004B/zh active
- 2019-04-02 TW TW108111705A patent/TWI704843B/zh active
- 2019-04-03 JP JP2020512301A patent/JP7048725B2/ja active Active
- 2019-04-03 KR KR1020207027900A patent/KR102488234B1/ko active IP Right Grant
- 2019-04-03 WO PCT/JP2019/014875 patent/WO2019194248A1/ja active Application Filing
- 2019-04-03 US US17/043,902 patent/US11521835B2/en active Active
- 2019-04-03 JP JP2020512302A patent/JP7048726B2/ja active Active
- 2019-04-03 WO PCT/JP2019/014874 patent/WO2019194247A1/ja active Application Filing
- 2019-04-03 KR KR1020207027550A patent/KR102489368B1/ko active IP Right Grant
- 2019-04-03 US US17/043,908 patent/US11715629B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008239414A (ja) * | 2007-03-28 | 2008-10-09 | Toto Ltd | セラミック部材および耐蝕性部材 |
WO2019066033A1 (ja) * | 2017-09-28 | 2019-04-04 | 京セラ株式会社 | プラズマ処理装置用部材およびプラズマ処理装置 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020116384A1 (ja) * | 2018-12-05 | 2020-06-11 | 京セラ株式会社 | プラズマ処理装置用部材およびこれを備えるプラズマ処理装置 |
CN113260732A (zh) * | 2018-12-05 | 2021-08-13 | 京瓷株式会社 | 等离子体处理装置用构件和具备它的等离子体处理装置 |
JPWO2020116384A1 (ja) * | 2018-12-05 | 2021-11-04 | 京セラ株式会社 | プラズマ処理装置用部材およびこれを備えるプラズマ処理装置 |
JP7165748B2 (ja) | 2018-12-05 | 2022-11-04 | 京セラ株式会社 | プラズマ処理装置用部材およびこれを備えるプラズマ処理装置 |
WO2020218265A1 (ja) * | 2019-04-26 | 2020-10-29 | 京セラ株式会社 | プラズマ処理装置用部材およびプラズマ処理装置 |
JPWO2020218265A1 (ja) * | 2019-04-26 | 2020-10-29 | ||
JP7290716B2 (ja) | 2019-04-26 | 2023-06-13 | 京セラ株式会社 | プラズマ処理装置用部材およびプラズマ処理装置 |
WO2022210575A1 (ja) * | 2021-03-31 | 2022-10-06 | 京セラ株式会社 | 膜付部材およびこれを備えるプラズマ処理装置 |
Also Published As
Publication number | Publication date |
---|---|
KR102489368B1 (ko) | 2023-01-17 |
JPWO2019194247A1 (ja) | 2021-04-15 |
KR20200127013A (ko) | 2020-11-09 |
KR102488234B1 (ko) | 2023-01-13 |
TW201943317A (zh) | 2019-11-01 |
JP7048725B2 (ja) | 2022-04-05 |
US11521835B2 (en) | 2022-12-06 |
WO2019194247A1 (ja) | 2019-10-10 |
TWI704843B (zh) | 2020-09-11 |
JP7048726B2 (ja) | 2022-04-05 |
US20210118686A1 (en) | 2021-04-22 |
US11715629B2 (en) | 2023-08-01 |
TW201942974A (zh) | 2019-11-01 |
US20210020415A1 (en) | 2021-01-21 |
TWI715004B (zh) | 2021-01-01 |
KR20200124269A (ko) | 2020-11-02 |
JPWO2019194248A1 (ja) | 2021-04-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2019194248A1 (ja) | プラズマ処理装置用部材およびこれを備えるプラズマ処理装置 | |
JP7062017B2 (ja) | プラズマ処理装置用部材およびこれを備えるプラズマ処理装置 | |
KR102621279B1 (ko) | 플라스마 처리 장치용 부재 및 이것을 구비하는 플라스마 처리 장치 | |
JP7189371B2 (ja) | プラズマ処理装置用部材およびこれを備えるプラズマ処理装置 | |
KR102612290B1 (ko) | 플라스마 처리 장치용 부재 및 플라스마 처리 장치 | |
WO2022210575A1 (ja) | 膜付部材およびこれを備えるプラズマ処理装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 19782355 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 20207027550 Country of ref document: KR Kind code of ref document: A |
|
ENP | Entry into the national phase |
Ref document number: 2020512302 Country of ref document: JP Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 19782355 Country of ref document: EP Kind code of ref document: A1 |