WO2019181707A1 - ガラス基板、液晶アンテナ及び高周波デバイス - Google Patents

ガラス基板、液晶アンテナ及び高周波デバイス Download PDF

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Publication number
WO2019181707A1
WO2019181707A1 PCT/JP2019/010424 JP2019010424W WO2019181707A1 WO 2019181707 A1 WO2019181707 A1 WO 2019181707A1 JP 2019010424 W JP2019010424 W JP 2019010424W WO 2019181707 A1 WO2019181707 A1 WO 2019181707A1
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Prior art keywords
glass substrate
less
substrate according
glass
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2019/010424
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English (en)
French (fr)
Japanese (ja)
Inventor
周平 野村
和孝 小野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to KR1020247032748A priority Critical patent/KR20240148452A/ko
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Priority to CN201980020056.4A priority patent/CN111886209A/zh
Priority to EP19771064.3A priority patent/EP3770129B1/en
Priority to KR1020207026692A priority patent/KR102714428B1/ko
Priority to JP2020508282A priority patent/JP7747437B2/ja
Priority to KR1020267000665A priority patent/KR20260013303A/ko
Publication of WO2019181707A1 publication Critical patent/WO2019181707A1/ja
Priority to US17/022,365 priority patent/US11239549B2/en
Anticipated expiration legal-status Critical
Priority to US17/550,080 priority patent/US11594811B2/en
Priority to US18/157,213 priority patent/US12157698B2/en
Priority to JP2024062281A priority patent/JP2024083508A/ja
Priority to US18/892,859 priority patent/US20250011220A1/en
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/364—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith using a particular conducting material, e.g. superconductor
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C19/00—Surface treatment of glass, not in the form of fibres or filaments, by mechanical means
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
    • C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
    • C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
    • C03C3/087—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal containing calcium oxide, e.g. common sheet or container glass
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C4/00—Compositions for glass with special properties
    • C03C4/0085—Compositions for glass with special properties for UV-transmitting glass
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C4/00—Compositions for glass with special properties
    • C03C4/16—Compositions for glass with special properties for dielectric glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00—Waveguides; Transmission lines of the waveguide type
    • H01P3/02—Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
    • H01P3/08—Microstrips; Strip lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/2283—Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
    • H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04—Resonant antennas
    • H01Q9/0407—Substantially flat resonant element parallel to ground plane, e.g. patch antenna

Definitions

  • the present invention relates to a glass substrate, and a liquid crystal antenna and a high-frequency device having the glass substrate.
  • an insulating substrate such as a resin substrate, a ceramic substrate, or a glass substrate is used as a circuit substrate used in such high-frequency communication equipment and electronic devices. Insulating substrates used for communication equipment and electronic devices for high frequency applications are required to reduce transmission loss based on dielectric loss, conductor loss, etc., in order to ensure characteristics such as quality and strength of high frequency signals. .
  • Patent Document 1 discloses that the transmission loss can be maintained at a conventional level and the crosstalk noise can be suppressed by setting the dielectric loss tangent of the insulating substrate and the wiring width and surface roughness of the wiring layer to a specific range.
  • Patent Document 2 discloses that an electronic circuit board having a small relative dielectric constant or dielectric loss can be obtained by using lead-free glass having a specific composition.
  • resin substrates have low rigidity due to their characteristics. For this reason, the resin substrate is difficult to apply when the semiconductor package product requires rigidity (strength). In addition, it is difficult to increase the surface smoothness of the ceramic substrate, and as a result, the conductor loss due to the conductor formed on the substrate surface tends to increase.
  • the glass substrate has high rigidity, it is easy to reduce the size and thickness of the package, has excellent surface smoothness, and is easy to increase in size as the substrate itself. .
  • the conventional glass substrate has a large dielectric loss tangent particularly in the GHz band, and it is difficult to maintain characteristics such as quality and strength of the high-frequency signal. Further, when the substrate is used as a perforated substrate in which a hole is formed in the substrate, the glass substrate is likely to be broken by a thermal shock generated due to a temperature difference in the substrate generated during laser processing for drilling.
  • an object of the present invention is to provide a glass substrate that can reduce the dielectric loss of a high-frequency signal and is excellent in thermal shock resistance, and a liquid crystal antenna and a high-frequency device using the glass substrate.
  • the temperature represented by the product of the Young's modulus and the average thermal expansion coefficient at 50 to 350 ° C. is set to a predetermined value or less, thereby increasing the temperature It was found to be excellent in resistance to thermal shock applied by change. Accordingly, it can be suitably used for a substrate used in an environment with a large temperature change such as a liquid crystal antenna or the like, a substrate for a high frequency circuit that performs drilling with a laser or the like.
  • the glass substrate according to the present invention satisfies the relationship of ⁇ Young's modulus (GPa) ⁇ 50 to 350 ° C. average thermal expansion coefficient (ppm / ° C.) ⁇ ⁇ 300 (GPa ⁇ ppm / ° C.), 20 ° C., 35 GHz And the dielectric loss tangent at 20 ° C. and 35 GHz is 0.006 or less.
  • the glass substrate is used for a liquid crystal antenna or a high-frequency circuit.
  • one mode of the liquid crystal antenna or the high-frequency device according to the present invention includes the glass substrate.
  • the dielectric loss of the high frequency signal can be reduced. Furthermore, since it has excellent thermal shock resistance, it is suitable as a substrate used in an environment with a large temperature change, a substrate for drilling with a laser, or the like. Therefore, a high-performance and practical liquid crystal antenna and high-frequency device can be provided.
  • FIG. 1 is a cross-sectional view showing an example of the configuration of a high-frequency circuit.
  • the content of each component in the glass substrate is a molar percentage display based on oxide. “High frequency” means that the frequency is 10 GHz or more, preferably more than 30 GHz, more preferably 35 GHz or more.
  • the glass substrate according to the present invention (hereinafter sometimes simply referred to as “substrate”) has ⁇ Young's modulus (GPa) ⁇ average thermal expansion coefficient (ppm / ° C.) at 50 to 350 ° C. ⁇ ⁇ 300 (GPa ⁇ ppm / ° C. ),
  • the relative dielectric constant at 20 ° C. and 35 GHz is 10 or less, and the dielectric loss tangent at 20 ° C. and 35 GHz is 0.006 or less.
  • the value represented by the formula ⁇ Young's modulus (GPa) ⁇ average coefficient of thermal expansion (ppm / ° C.) at 50 to 350 ° C. ⁇ (hereinafter sometimes referred to as formula 2) shall be 300 GPa ⁇ ppm / ° C. or less.
  • the value represented by Formula 2 is preferably 280 GPa ⁇ ppm / ° C. or less, more preferably 250 GPa ⁇ ppm / ° C. or less, still more preferably 220 GPa ⁇ ppm / ° C. or less, and even more preferably 200 GPa ⁇ ppm / ° C. or less.
  • the lower limit is not particularly limited, but is preferably 100 GPa ⁇ ppm / ° C. or more from the viewpoint of securing the rigidity of the substrate and obtaining a substrate that is easy to manufacture.
  • the Young's modulus of the glass substrate is preferably 70 GPa or less, more preferably 67 GPa or less, further preferably 64 GPa or less, and further preferably 60 GPa or less.
  • the Young's modulus is preferably 40 GPa or more, preferably 50 GPa or more from the viewpoint of suppressing the amount of bending of the substrate during the manufacturing process (wafer process) of the high-frequency device and suppressing the occurrence of manufacturing defects. Is more preferable, and 55 GPa or more is more preferable.
  • the Young's modulus can be adjusted by the composition and thermal history of the glass used as the substrate.
  • the Young's modulus can be measured by the ultrasonic pulse method according to the method defined in JIS Z 2280 (1993).
  • the average coefficient of thermal expansion at 50 to 350 ° C. is preferably smaller, preferably 5 ppm / ° C. or less, more preferably 4 ppm / ° C. or less, further preferably 3.5 ppm / ° C. or less, and more preferably 3.3 ppm / ° C. or less. Further preferred. In addition, by reducing the average thermal expansion coefficient, it is possible to more appropriately adjust the difference in thermal expansion coefficient with other members when manufacturing a device or the like using the substrate.
  • the lower limit is not particularly limited, but is preferably 1.0 ppm / ° C. or more, more preferably 2.0 ppm / ° C. or more from the viewpoint of obtaining thermophysical properties suitable for molding.
  • the thermal expansion coefficient can be adjusted by the content of the alkali metal oxide or alkaline earth metal oxide or the thermal history, among the glass composition as the substrate.
  • the average coefficient of thermal expansion at 50 to 350 ° C. can be measured using a differential thermal dilatometer according to the method specified in JIS R3102 (1995).
  • the dielectric loss in the high frequency region can be reduced by reducing the relative dielectric constant and dielectric loss tangent of the glass substrate.
  • the relative dielectric constant at 20 ° C. and 35 GHz is 10 or less, and the dielectric loss tangent (tan ⁇ ) is 0.006 or less.
  • the relative dielectric constant is preferably 8 or less, more preferably 6 or less, still more preferably 5 or less, and even more preferably 4.5 or less.
  • the lower limit of the relative dielectric constant is not particularly limited, but is usually 4.0 or more.
  • the dielectric loss tangent is preferably 0.005 or less, more preferably 0.004 or less, further preferably 0.0035 or less, and further preferably 0.003 or less.
  • the lower limit of the dielectric loss tangent is not particularly limited, but is usually 0.0005 or more.
  • the relative dielectric constant at 20 ° C. and 10 GHz is preferably 10 or less, and the dielectric loss tangent (tan ⁇ ) is preferably 0.006 or less.
  • the relative dielectric constant is more preferably 8 or less, further preferably 6 or less, still more preferably 5 or less, and particularly preferably 4.5 or less.
  • the lower limit of the relative dielectric constant is not particularly limited, but is usually 4.0 or more.
  • the dielectric loss tangent is more preferably 0.005 or less, further preferably 0.004 or less, still more preferably 0.0035 or less, and particularly preferably 0.003 or less.
  • the lower limit of the dielectric loss tangent is not particularly limited, but is usually 0.0005 or more.
  • the relative dielectric constant and electrostatic tangent value at 20 ° C. and 35 GHz close to the relative dielectric constant and electrostatic tangent value at 20 ° C. and 10 GHz, respectively, by reducing the frequency dependence (dielectric dispersion), This is preferable because the frequency characteristics of the dielectric characteristics are not easily changed, and the design change can be small even when the frequency at the time of use is different.
  • the relative dielectric constant and dielectric loss tangent can be adjusted by the composition of the glass serving as the substrate.
  • the relative dielectric constant and dielectric loss tangent can be measured using a cavity resonator and a vector network analyzer in accordance with the method defined in JIS R1641 (2007).
  • the surface roughness of the end face of the substrate is preferably 1.5 nm or less, more preferably 1.0 nm or less, still more preferably 0.8 nm or less, and even more preferably 0.5 nm or less as the value of arithmetic average roughness Ra. Preferably, 0.3 nm or less is particularly preferable.
  • the end surface of the glass substrate is a surface parallel to the thickness direction of the substrate.
  • Arithmetic mean roughness Ra means a value obtained in accordance with JIS B0601 (2001).
  • a processing method such as polishing treatment or etching using a chemical solution such as hydrofluoric acid can be mentioned.
  • an abrasive mainly composed of cerium oxide or colloidal silica and mechanical polishing using an abrasive pad, an abrasive, an abrasive slurry using an acidic or alkaline liquid as a dispersion medium, and an abrasive pad are used.
  • the chemical mechanical polishing used, chemical polishing using an acidic solution or an alkaline solution as an etching solution, or the like can be applied.
  • These polishing processes are applied according to the surface roughness of the glass plate used as the raw material of the glass substrate. For example, preliminary polishing and finish polishing may be combined and applied.
  • the substrate is likely to be cracked, cracked, chipped, etc. starting from the end surface, it is preferable that at least a part of the end surface is chamfered to improve the strength of the substrate, and the chamfered shape of the end surface is obtuse. It is more preferable because the strength can be further improved.
  • the chamfering include C chamfering, R chamfering, yarn chamfering, and the like, and chamfering may be performed with a complicated shape combining these. Among them, C chamfering and R chamfering are preferable.
  • C chamfering is a chamfering method in which the corner portion formed by the main surface and the end surface is obliquely dropped, and the angle formed by the surface perpendicular to the main surface of the substrate and the surface after the corner portion is dropped is 120 ° or more. Is more preferable, 135 ° or more is more preferable, and 175 ° or more is more preferable.
  • the R chamfering is a chamfering method in which the shape after chamfering is rounded with respect to the C chamfering.
  • the arithmetic average roughness Ra of the chamfered surface is preferably 0.2 ⁇ m or less.
  • the main surface of the glass substrate is a surface on which a wiring layer is formed when the substrate is used for, for example, a high-frequency circuit, and the surface roughness of the main surface is 1.5 nm or less as the value of the arithmetic average roughness Ra. Even in a high frequency region exceeding 30 GHz, the skin resistance can be reduced with respect to the wiring layer in which the skin effect has occurred, and this is preferable because the conductor loss is reduced.
  • the arithmetic average roughness Ra of the main surface of the substrate is more preferably 1.0 nm or less, and further preferably 0.5 nm or less.
  • the surface roughness of the main surface can be realized by subjecting the surface of the main surface to a polishing treatment as necessary.
  • a polishing treatment a method similar to the polishing treatment on the end face can be employed.
  • the shape of the substrate is not particularly limited, but the area of one main surface is 100 cm 2 or more is preferred from the viewpoint of transmission and reception efficiency of the antenna, etc., 225 cm 2 or more is more preferable. Further, preferably from the viewpoint of ease of handling of the substrate is at 100000 2 or less, more preferably 10000 cm 2 or less, more preferably 3600 cm 2 or less.
  • the thickness of the substrate is preferably 0.01 mm or more from the viewpoint of maintaining the strength of the substrate, and more preferably 0.05 mm or more. Furthermore, it is more preferably 0.1 mm or more, and more preferably more than 0.2 mm, from the viewpoint that the ultraviolet shielding ability can be increased and a resin deteriorated by ultraviolet rays can be protected.
  • it is preferably 2 mm or less, more preferably 1 mm or less from the viewpoints of thinning and miniaturization of a high-frequency device and a liquid crystal antenna using a high-frequency circuit, and improvement of production efficiency. Furthermore, 0.7 mm or less is more preferable, and 0.5 mm or less is more preferable from the point which can raise ultraviolet transmittance and can improve manufacturability using an ultraviolet curable material in manufacturing processes, such as a device and an antenna.
  • the substrate has a Vickers hardness of 400 or more because it is difficult to break against mechanical impact, more preferably 450 or more, and even more preferably 500 or more. Moreover, 550 or less is preferable.
  • the Vickers hardness can be adjusted by the glass composition in the substrate.
  • the Vickers hardness can be measured by a method based on JIS R1310 (2003).
  • the crack generation load of the substrate is preferably more than 1.96 N because it is difficult to crack against mechanical impact, more preferably 4.9 N or more, further preferably 9.8 N or more, particularly more than 19.6 N. preferable.
  • the crack generation load can be adjusted by the glass composition, thermal history and surface processing on the substrate.
  • the crack generation load can be determined by measuring a load with a crack generation rate exceeding 50% using a Vickers hardness tester.
  • the density of the substrate is preferably 2.5 g / cm 3 or less from the viewpoint of reducing the weight of a device or antenna having the substrate and reducing the brittleness of the glass and making it difficult to break against thermal shock and mechanical shock.
  • 2.4 g / cm 3 or less is more preferable, 2.35 g / cm 3 or less is more preferable, and 2.3 g / cm 3 or less is even more preferable.
  • a minimum in particular is not restrict
  • the density can be measured by the Archimedes method.
  • At least one main surface of the substrate has a compressive stress layer on at least a part of the surface from the viewpoint of being hard to break against thermal shock and mechanical shock.
  • the compressive stress layer can be formed by, for example, strengthening treatment, and both physical strengthening treatment and chemical strengthening treatment can be employed. Conventionally known methods can be used for both the physical strengthening treatment and the chemical strengthening treatment.
  • the porosity of the substrate is preferably 0.1% or less, more preferably 0.01% or less, and still more preferably 0.001% or less, from the viewpoint of suppressing the generation of noise when a high-frequency device is produced. Further, from the viewpoint of the liquid crystal antenna, 0.0001% or less is preferable in order to suppress the occurrence of defective wiring due to the exposure of open pores on the surface.
  • the porosity can be obtained by observing bubbles contained in the glass substrate with an optical microscope, obtaining the number and diameter of the bubbles, and calculating the volume of the bubbles contained per unit volume.
  • the transmittance of light with a wavelength of 350 nm of the substrate is preferably 50% or more because an ultraviolet curable material can be used in a lamination process or the like in a manufacturing process of a high-frequency device, an antenna, or the like, and productivity can be improved. Furthermore, 70% or more is more preferable in order to shorten the irradiation time of the ultraviolet ray to the ultraviolet curable material in the manufacturing process of the device, the antenna and the like and reduce the unevenness of the ultraviolet curable material in the thickness direction.
  • the transmittance of light having a wavelength of 300 nm of the substrate is preferably 50% or more, more preferably 60% or more, and even more preferably 70% or more. Further, the transmittance of light having a wavelength of 250 nm is preferably 5% or more, more preferably 10% or more, and further preferably 20% or more.
  • the transmittance of light having a wavelength of 350 nm is 80% from the viewpoint of providing a function as a protective material by providing the substrate with an ultraviolet shielding ability. Or less, more preferably 60% or less, even more preferably 30% or less, and most preferably 10% or less.
  • the transmittance of light having a wavelength of 300 nm of the substrate is preferably 80% or less, more preferably 60% or less, still more preferably 30% or less, and still more preferably 10% or less.
  • the transmittance of light having a wavelength of 250 m is preferably 60% or less, more preferably 30% or less, further preferably 10% or less, and still more preferably 5% or less.
  • the transmittance of light of each wavelength of the substrate can be measured using a visible ultraviolet spectrophotometer, and an external transmittance including loss due to reflection is used.
  • the ⁇ -OH value of the substrate is a value used as an index of the water content of the glass.
  • the absorbance of the glass substrate with respect to light having a wavelength of 2.75 to 2.95 ⁇ m is measured, and the maximum value ⁇ max is determined as the value of the substrate. It is a value obtained by dividing by the thickness (mm).
  • the ⁇ -OH value is preferably 0.8 mm ⁇ 1 or less because the low dielectric loss property of the substrate can be further improved, preferably 0.6 mm ⁇ 1 or less, more preferably 0.5 mm ⁇ 1 or less. Preferably, 0.4 mm ⁇ 1 or less is even more preferable.
  • beta-OH value is more preferably equal to or greater than 0.1 mm -1, further preferably 0.2 mm -1 or higher.
  • the ⁇ -OH value can be adjusted by the glass composition in the substrate, the heat source at the time of melting, the melting time, and the raw material.
  • the devitrification temperature of the substrate is preferably 1400 ° C. or lower.
  • the member temperature of the forming equipment can be lowered when the glass is formed, and the member life can be extended.
  • the devitrification temperature is more preferably 1350 ° C. or less, further preferably 1330 ° C. or less, and particularly preferably 1300 ° C. or less.
  • Glass devitrification temperature refers to the glass surface obtained by putting crushed glass particles in a platinum dish, heat-treating in an electric furnace controlled at a constant temperature for 17 hours, and observing the sample after the heat treatment with an optical microscope. And the average value of the maximum temperature at which crystals precipitate and the minimum temperature at which crystals do not precipitate.
  • the glass on the substrate is amorphous and indicates a solid exhibiting a glass transition. It does not include crystallized glass, which is a mixture of glass and crystal, or a glass sintered body containing a crystalline filler. In addition, about the crystallinity of glass, it can confirm that it is amorphous by, for example, performing an X-ray-diffraction measurement and not having a clear diffraction peak.
  • the glass substrate is formed by melting and curing a glass raw material.
  • the method for producing the substrate is not particularly limited. For example, a method of forming a general molten glass into a predetermined plate thickness by a float process, cutting it into a desired shape after slow cooling, and the like are applied. be able to.
  • substantially does not contain means that it is not contained other than inevitable impurities mixed from raw materials, that is, it is not intentionally contained, and is generally 0.1 mol% or less.
  • the present invention is not limited to this.
  • Glass is preferably composed mainly of SiO 2.
  • “main component” means that the content of SiO 2 is maximum in the proportion of the component in mol% based on the oxide.
  • SiO 2 is a network-forming substance, and the content thereof is preferably 40% or more, more preferably 45% or more because glass forming ability and weather resistance can be improved and devitrification can be suppressed.
  • 50% or more is even more preferable, and 55% or more is particularly preferable.
  • it is preferably 75% or less, more preferably 74% or less, still more preferably 73% or less, and even more preferably 72% or less from the viewpoint of improving the solubility of the glass.
  • the total content of Al 2 O 3 and B 2 O 3 (including the case where the content of Al 2 O 3 is 0) is preferably 1% or more because it can enhance the solubility of the glass and the like, and preferably 3% The above is more preferable, 5% or more is further preferable, and 7% or more is more preferable. Further, while maintaining the solubility of glass or the like, since it is possible to increase the low dielectric loss of the substrate, the total content of Al 2 O 3 and B 2 O 3 is preferably 40% or less, more 37% or less Preferably, 35% or less is more preferable, and 33% or less is even more preferable.
  • the molar ratio of the content represented by ⁇ Al 2 O 3 / (Al 2 O 3 + B 2 O 3 ) ⁇ is preferably 0.45 or less because the low dielectric loss property of the glass substrate can be improved. 0.4 or less is more preferable, and 0.3 or less is more preferable. Further, the molar ratio of the content represented by ⁇ Al 2 O 3 / (Al 2 O 3 + B 2 O 3 ) ⁇ is preferably 0 or more (including 0), more preferably 0.01 or more, and 0.05 The above is more preferable.
  • the content of Al 2 O 3 is preferably 15% or less, more preferably 14% or less, and even more preferably 10% or less because glass solubility and the like can be improved. Moreover, since it is a component which exhibits an effect in improving weather resistance, suppressing phase separation of the glass, lowering the thermal expansion coefficient, etc., Al 2 O 3 may not be contained, but the content in the case of inclusion is 0. More preferably 5% or more.
  • the content of B 2 O 3 is preferably 30% or less, more preferably 28% or less, further preferably 26% or less, and still more preferably 24% or less, because acid resistance and strain point can be improved. 23% or less is particularly preferable. Moreover, since it is a component which exhibits an effect for improving the solubility reactivity and lowering the devitrification temperature, the content of B 2 O 3 is preferably 9% or more, more preferably 13% or more, and 16% or more. Further preferred.
  • alkaline earth metal oxides include MgO, CaO, SrO, and BaO, all of which function as components that increase the dissolution reactivity of glass.
  • the total content of such alkaline earth metal oxides is preferably 13% or less, more preferably 11% or less, further preferably 10% or less, and more preferably 8% or less because the low dielectric loss property of the glass substrate can be enhanced. Is more preferable, and 6% or less is particularly preferable.
  • the total content of the alkaline earth metal oxide is preferably 0.1% or more, more preferably 3% or more, and further preferably 5% or more, from the viewpoint that the solubility of the glass can be kept good.
  • MgO is not an essential component, but is a component that can increase the Young's modulus without increasing the specific gravity. That is, MgO is a component that can increase the specific elastic modulus, and by containing MgO, the problem of deflection can be reduced, and the fracture toughness value can be improved to increase the glass strength. MgO is a component that improves solubility. Although MgO is not an essential component, the effect of containing MgO can be sufficiently obtained, and since the thermal expansion coefficient can be suppressed from becoming too low, the content is preferably 0.1% or more, and 1% The above is more preferable, and 3% or more is more preferable. On the other hand, from the viewpoint of suppressing an increase in the devitrification temperature, the content of MgO is preferably 13% or less, more preferably 11% or less, and further preferably 9% or less.
  • CaO is a component that increases the specific elastic modulus next to MgO in alkaline earth metals and does not excessively lower the strain point, and is a component that improves solubility as well as MgO. Furthermore, it is a component having a feature that it is difficult to increase the devitrification temperature as compared with MgO.
  • the content is preferably 0.1% or more, more preferably 1% or more, and even more preferably 3% or more because an effect of containing CaO can be sufficiently obtained. Further, the CaO content is preferably 13% or less, preferably 10% or less from the viewpoint that the average coefficient of thermal expansion does not become too high and the devitrification temperature can be suppressed to prevent devitrification during the production of glass. Is more preferable, and 8% or less is more preferable.
  • SrO is a component that improves the solubility without increasing the devitrification temperature of the glass.
  • SrO is not an essential component, but since the effect of containing SrO can be sufficiently obtained, the content is preferably 0.1% or more, more preferably 0.5% or more, and further preferably 1% or more, 1.5% or more is still more preferable, and 2% or more is particularly preferable.
  • the SrO content is preferably 13% or less, more preferably 10% or less, and even more preferably 7% or less, from the viewpoint of suppressing the average thermal expansion coefficient from becoming too high without increasing the specific gravity. 5% or less is particularly preferable.
  • BaO is not an essential component, but is a component that improves the solubility without increasing the devitrification temperature of the glass.
  • the content of BaO is preferably 10% or less, more preferably 8% or less, still more preferably 5% or less, still more preferably 3% or less, and particularly preferably substantially not contained.
  • the stress applied to the substrate is reduced even when distortion occurs due to the difference in thermal expansion. From the viewpoint of improving impact properties, 280 or less is more preferred, 250 or less is more preferred, 220 or less is more preferred, and 200 or less is particularly preferred. Moreover, although a minimum is not specifically limited, 100 or more are preferable from a viewpoint of obtaining the thermophysical property suitable for shaping
  • alkali metal oxides Li 2 O, Na 2 O , K 2 O, Rb 2 O, Cs 2 O and the like.
  • the total content of such alkali metal oxides is preferably 5% or less, more preferably 3% or less, further preferably 1% or less, and more preferably 0.2% or less from the viewpoint of enhancing the low dielectric loss of the glass substrate. Even more preferred is 0.1% or less, and most preferred is 0.05% or less.
  • Na 2 O and K 2 O are particularly important, and the total content of Na 2 O and K 2 O is preferably in the range of 0.001 to 5%.
  • the coexistence of Na 2 O and K 2 O is preferable because the movement of the alkali component can be suppressed, so that the low dielectric loss property of the glass substrate can be improved. That is, the molar ratio of the content represented by ⁇ Na 2 O / (Na 2 O + K 2 O) ⁇ is preferably 0.01 to 0.99, more preferably 0.98 or less, and even more preferably 0.95 or less. 0.9 or less is even more preferable. On the other hand, the molar ratio of the content represented by ⁇ Na 2 O / (Na 2 O + K 2 O) ⁇ is more preferably 0.02 or more, further preferably 0.05 or more, and further preferably 0.1 or more. .
  • Fe 2 O 3 is a component that controls the light absorption performance of the glass substrate, such as infrared absorption performance and ultraviolet absorption performance, and 0.012% or less as the Fe content in terms of Fe 2 O 3 as necessary. Can be contained. When the Fe content is 0.012% or less, the low dielectric loss property and ultraviolet transmittance of the glass substrate can be maintained.
  • the content is more preferably 0.01% or less, and further preferably 0.005% or less, in order to improve the ultraviolet transmittance.
  • the glass substrate is preferably contained in an amount of 0.05% or more as the Fe content in terms of Fe 2 O 3 as necessary from the viewpoint of improving the ultraviolet shielding ability.
  • the Fe content is more preferably 0.07% or more, and further preferably 0.1% or more.
  • the glass substrate manufacturing method includes a melting step of heating a glass raw material to obtain molten glass, a clarification step of removing bubbles from the molten glass, a molding step of obtaining a glass ribbon by forming the molten glass into a plate shape, and bringing the glass ribbon to room temperature.
  • a slow cooling step of slow cooling is included.
  • the molten glass may be formed into a block shape, slowly cooled, and then cut and polished to produce a glass substrate.
  • raw materials are prepared so as to have a target glass substrate composition, and the raw materials are continuously charged into a melting furnace, preferably heated to about 1450 ° C. to 1750 ° C. to obtain molten glass.
  • halides such as oxides, carbonates, nitrates, hydroxides and chlorides can be used.
  • strontium nitrate As the nitrate, strontium nitrate, barium nitrate, magnesium nitrate, calcium nitrate and the like can be used. More preferably, strontium nitrate is used.
  • the raw material particle size is appropriately selected from a raw material having a large particle size of several hundreds ⁇ m that does not cause undissolved residue to a raw material having a small particle size of about several ⁇ m that does not agglomerate as secondary particles without scattering during conveyance of the material. Can be used. It is also possible to use a granulated body.
  • the water content of the raw material can be appropriately adjusted.
  • the dissolution conditions such as the ⁇ -OH value and the oxidation-reduction degree of Fe (redox [Fe 2+ / (Fe 2+ + Fe 3+ )]) can be appropriately adjusted and used.
  • the clarification step is a step of removing bubbles from the molten glass obtained in the melting step.
  • a defoaming method using reduced pressure may be applied, or defoaming may be performed by setting the temperature higher than the melting temperature of the raw material.
  • SO 3 and SnO 2 as a fining agent.
  • the SO 3 source is preferably a sulfate of at least one element selected from the group consisting of Al, Na, K, Mg, Ca, Sr, and Ba, more preferably an alkaline earth metal sulfate. 4 ⁇ 2H 2 O, SrSO 4 and BaSO 4 is significantly acts to increase the foam, particularly preferred.
  • halogen such as Cl or F as a clarifier in the defoaming method using reduced pressure.
  • the Cl source is preferably a chloride of at least one element selected from the group consisting of Al, Mg, Ca, Sr and Ba, more preferably a chloride of an alkaline earth metal, and especially, SrCl 2 ⁇ 6H 2. O and BaCl 2 ⁇ 2H 2 O are particularly preferable because they have a remarkable effect of enlarging bubbles and have low deliquescence.
  • CaF 2 is The effect of increasing the solubility of the glass raw material is remarkable and more preferable.
  • Tin compounds typified by SnO 2 generate O 2 gas in the glass melt.
  • SnO 2 is reduced from SnO 2 to SnO at a temperature of 1450 ° C. or more, and O 2 gas is generated and has a function of greatly growing bubbles.
  • the glass raw material is heated to about 1450 to 1750 ° C. and melted, so that bubbles in the glass melt are more effectively increased.
  • the tin compound in the raw material is prepared so as to be contained at 0.01% or more in terms of SnO 2 with respect to 100% of the total amount of the mother composition.
  • the SnO 2 content of 0.01% or more is preferable because a clarification action during melting of the glass raw material can be obtained, more preferably 0.05% or more, and still more preferably 0.10% or more.
  • it is preferable that the SnO 2 content is 0.3% or less because the occurrence of coloring and devitrification of the glass is suppressed.
  • the content of the tin compound in the alkali-free glass is more preferably 0.25% or less, more preferably 0.2% or less, and more preferably 0.15% or less in terms of SnO 2 with respect to 100% of the total amount of the mother composition. Particularly preferred.
  • the forming step is a step of obtaining a glass ribbon by forming the molten glass from which bubbles have been removed in the clarification step into a plate shape.
  • the forming process includes a float method in which molten glass is poured onto a molten metal such as tin to obtain a glass ribbon, an overflow down draw method (fusion method) in which the molten glass flows downward from a bowl-shaped member, and a slit.
  • fusion method overflow down draw method
  • the slow cooling step is a step of cooling the glass ribbon obtained in the molding step under cooling conditions controlled to a room temperature state.
  • the glass ribbon is cooled so that the temperature range between the slow cooling point and the strain point of the formed glass is a predetermined average cooling rate, R (° C./min), and further the room temperature state Slowly cool under predetermined conditions.
  • R ° C./min
  • the predetermined average cooling rate R [cooling rate (R)] will be described below.
  • the equivalent cooling rate (R) in the slow cooling process is too large, the glass after cooling tends to remain distorted.
  • the equivalent cooling rate which is a parameter reflecting the fictive temperature, becomes too high, and as a result, low dielectric loss characteristics cannot be obtained. Therefore, it is preferable to set R so that the equivalent cooling rate is 800 ° C./min or less.
  • the equivalent cooling rate is more preferably 400 ° C./min or less, further preferably 100 ° C./min or less, and particularly preferably 50 ° C./min or less.
  • the cooling rate is too low, the time required for the process becomes too long and the productivity is lowered. Therefore, it is preferably set to be 0.1 ° C./min, more preferably 0.5 ° C./min or more, and further preferably 1 ° C./min or more.
  • a glass having a target composition to be processed into a cuboid of 10 mm ⁇ 10 mm ⁇ 0.3 to 2.0 mm is held at a strain point of + 170 ° C. for 5 minutes using an infrared heating electric furnace. 25 ° C). At this time, a plurality of glass samples with a cooling rate of 1 ° C./min to 1000 ° C./min are produced.
  • n d the refractive index of the plurality of glass samples of the d-line (wavelength 587.6 nm).
  • a V block method or a minimum deflection angle method may be used for the measurement.
  • the resulting n d by plotting the logarithm of the cooling speed to obtain a calibration curve of the n d with respect to the cooling rate.
  • a corresponding cooling rate (referred to as an equivalent cooling rate in the present embodiment) corresponding to the obtained nd is obtained from the calibration curve.
  • the manufacturing method of the glass substrate was described, a manufacturing method is not limited to the said embodiment, The deformation
  • the crucible made from platinum or the alloy which has platinum as a main component is a melting tank. Or you may use for a clarification tank.
  • the raw material is prepared so as to have the composition of the obtained glass substrate, and the platinum crucible containing the raw material is heated in an electric furnace, preferably heated to about 1450 ° C. to 1700 ° C. To do. A platinum stirrer is inserted and stirred for 1 to 3 hours to obtain molten glass.
  • the molten glass is poured out onto a carbon plate or a mold, for example, to form a plate or block.
  • the glass transition point Tg is maintained at a temperature of about Tg + 50 ° C., and then cooled to about 1 to 10 ° C./min to the vicinity of the strain point. Cool at a cooling rate that does not remain.
  • a glass substrate is obtained. Further, the glass substrate obtained by cutting may be gradually cooled to a room temperature state at a predetermined cooling rate after being heated to, for example, about Tg + 50 ° C. By doing in this way, the equivalent cooling temperature of glass can be adjusted.
  • the glass substrate of the present invention is a high-frequency device (electronic device) such as a semiconductor device used in a communication device such as a mobile phone, a smartphone, a portable information terminal, or a Wi-Fi device, a surface acoustic wave (SAW) device, a radar.
  • a high-frequency device electronic device
  • a communication device such as a mobile phone, a smartphone, a portable information terminal, or a Wi-Fi device
  • SAW surface acoustic wave
  • Suitable for circuit boards such as radar parts such as transceivers and boards such as antenna parts such as liquid crystal antennas, especially because it can reduce dielectric loss of high-frequency signals and has excellent thermal shock resistance. It is more suitable for a high-frequency circuit used for a high-frequency device or a substrate for a liquid crystal antenna.
  • the high-frequency circuit board is suitable for high-frequency devices that handle high-frequency signals, particularly high-frequency signals exceeding 30 GHz, and further high-frequency signals exceeding 35 GHz, and reducing the transmission loss of such high-frequency signals. Properties such as quality and strength can be improved.
  • FIG. 1 shows an example (cross-sectional view) of the configuration of a high-frequency circuit used in a high-frequency device.
  • the circuit substrate 1 is formed on an insulating glass substrate 2 and a first main surface 2a of the glass substrate 2.
  • a first wiring layer 3 and a second wiring layer 4 formed on the second main surface 2b of the glass substrate 2 are provided.
  • the first and second wiring layers 3 and 4 form a microstrip line as an example of a transmission line.
  • the first wiring layer 3 constitutes a signal wiring
  • the second wiring layer 4 constitutes a ground line.
  • the structure of the first and second wiring layers 3 and 4 is not limited to this, and the wiring layer may be formed only on one main surface of the glass substrate 2.
  • the first and second wiring layers 3 and 4 are layers formed of a conductor, and the thickness thereof is usually about 0.1 to 50 ⁇ m.
  • the conductors forming the first and second wiring layers 3 and 4 are not particularly limited.
  • metals such as copper, gold, silver, aluminum, titanium, chromium, molybdenum, tungsten, platinum, nickel, and the like
  • An alloy or a metal compound containing at least one of these metals is used.
  • the structure of the first and second wiring layers 3 and 4 is not limited to a single layer structure, and may have a multilayer structure such as a laminated structure of a titanium layer and a copper layer.
  • the formation method of the 1st and 2nd wiring layers 3 and 4 is not specifically limited, For example, various well-known formation methods, such as the printing method which used the conductor paste, the dipping method, the plating method, the vapor deposition method, sputtering, etc. Can be applied.
  • the glass substrate of the present invention for a high frequency circuit, transmission loss at a high frequency of the circuit substrate can be reduced.
  • the transmission loss at a frequency of 35 GHz can be reduced to preferably 1 dB / cm or less, and more preferably to 0.5 dB / cm or less. Therefore, since the characteristics such as the quality and strength of the high-frequency signal, particularly the high-frequency signal exceeding 30 GHz, and further the high-frequency signal exceeding 35 GHz are maintained, a glass substrate and a circuit board suitable for a high-frequency device handling such a high-frequency signal are provided. Can be provided. Thereby, the characteristic and quality of the high frequency device which handles a high frequency signal can be improved.
  • the high-frequency circuit board includes a board called a universal board or a perforated board.
  • a regular pattern such as a lattice
  • copper foil lands are formed on a base insulating board, Copper foil wiring connecting several lands is formed by etching.
  • a laser or the like is used for forming or etching the through hole. Examples of the laser include an excimer laser, an infrared laser, a CO 2 laser, and a UV laser.
  • the glass substrate of the present invention When forming or etching through-holes, a temperature difference occurs in the glass substrate and a thermal shock is applied, but the glass substrate of the present invention has a high thermal shock resistance, and therefore it is also cracked against the thermal shock. Through holes and etching can be formed.
  • a liquid crystal antenna is a satellite communication antenna that uses liquid crystal technology and can control the direction of radio waves to be transmitted and received, and is mainly suitable for vehicles such as ships, airplanes, and automobiles. Since liquid crystal antennas are mainly expected to be used outdoors, stable characteristics in a wide temperature range are required, and heat applied by sudden temperature changes such as ground and sky, squall in a scorching desert, etc. Resistance to impact is also required.
  • the use of the glass substrate of the present invention for a liquid crystal antenna is preferable because it can supply stable characteristics even in a wide temperature range, and further has resistance to rapid temperature changes, so that it can be used without cracking.
  • Examples 1 to 26 A glass substrate having a composition shown in Tables 1 to 4, a thickness of 0.5 to 10 mm, and a shape of 50 ⁇ 50 mm was prepared.
  • the glass substrate was produced by a melting method using a platinum crucible.
  • Raw materials such as silica sand were mixed so as to be 1 kg as glass, and a batch was prepared.
  • To 100% raw material of the target composition in mass percentage based on oxides, from 0.1% to 1% sulfate converted to SO 3, 0.16% of F, was added Cl 1%.
  • the raw material was put in a platinum crucible and melted by heating at a temperature of 1650 ° C. for 3 hours in an electric furnace to obtain molten glass.
  • a platinum stirrer was inserted into a platinum crucible and stirred for 1 hour to homogenize the glass.
  • the plate glass is placed in an electric furnace having a temperature of about Tg + 50 ° C., held for 1 hour, and then Tg-100 ° C. at a cooling rate of 1 ° C./min. The electric furnace was cooled down to room temperature and then allowed to cool until the glass reached room temperature.
  • the glass was formed into a plate shape by cutting and polishing. Further, the end face was chamfered (C / R) with a chamfering device.
  • a glass plate chamfering apparatus an apparatus described in Japanese Patent Application Laid-Open No. 2008-49449 is exemplified, which is an apparatus for chamfering an end portion of a glass plate using a rotating grindstone.
  • the rotating grindstone may be either a resin bond or a metal bond.
  • the abrasive grains used in grinding stone, diamond, cubic boron nitride (CBN), alumina (Al 2 O 3), silicon carbide (SiC), pumice, or any kind of garnet and the like, or a combination thereof are exemplified.
  • RO total amount * 1 represents the total content of alkaline earth metal oxides (MgO + CaO + SrO + BaO)
  • R 2 O total amount * 2 represents the total amount of alkali metal oxides ( It represents the content of Na 2 O + K 2 O).
  • Equation 1 ⁇ 1.02 ⁇ SiO 2 + 3.42 ⁇ Al 2 O using the content in mole percentage based on oxides 3 + 0.74 ⁇ B 2 O 3 + 9.17 ⁇ MgO + 12.55 ⁇ CaO + 13.85 ⁇ SrO + 14.44 ⁇ BaO + 31.61 ⁇ Na 2 O + 20.35 ⁇ K 2 O ⁇ .
  • Formula 2 is a value represented by ⁇ Young's modulus (GPa) ⁇ average thermal expansion coefficient (ppm / ° C.) at 50 to 350 ° C. ⁇ .
  • Equation 1 The values of Equation 1 are shown in Tables 1 to 4, and the other results are shown in Tables 5 to 8, respectively.
  • the values in parentheses in the table are those obtained by calculation, and blank or-means unmeasured.
  • the crack generation load When a regular square pyramid-shaped Vickers indenter (diamond indenter) is pushed into the glass surface for 30 seconds in an atmosphere with a relative humidity of about 40%, the ratio of cracks forming outward from all four corners of the indentation is 50%. This is the indentation load.
  • the crack generation load can be measured by a commercially available Vickers hardness tester.
  • the crack generation load is an average value for 10 or more indentations.
  • Transmittance Using a visible ultraviolet spectrophotometer, the transmittance of mirror-polished glass having a predetermined thickness was measured. The transmittance was expressed as an external transmittance including a loss due to reflection, and a value obtained by converting the glass thickness into 0.3 to 0.4 mm.
  • the specific modulus was obtained by calculation using the measurement of density and Young's modulus, and the unit was expressed as GPa ⁇ cm 3 / g.
  • the glass substrate of the present invention has a small product of the coefficient of thermal expansion and Young's modulus (value expressed by Equation 2) as small as 300 or less.
  • Young's modulus value expressed by Equation 2
  • tensile stress is unlikely to occur.
  • use in an environment in which a rapid temperature change occurs can suppress breakage in a machining process in which a temperature difference is likely to occur.
  • the glass substrate of the present invention has a relative dielectric constant of 10 or less at 20 ° C. and 35 GHz, and a dielectric loss tangent at 20 ° C. and 35 GHz of 0.006 or less. Can be reduced.
  • the glass substrate of the present invention since the Vickers hardness is small, it can be processed with a light load, and since the crack generation load is large, defects such as microcracks are unlikely to occur, so that a high strength substrate can be obtained.
  • the glass substrate of the present invention is excellent in high-frequency signal dielectric loss and exhibits high thermal shock resistance. Therefore, a circuit board using the glass substrate is excellent in high-frequency signal transmission loss and excellent in workability using heat such as laser.
  • Such glass substrates and circuit boards are generally used for high-frequency electronic devices that handle high-frequency signals exceeding 10 GHz, particularly high-frequency signals exceeding 30 GHz, and further high-frequency signals of 35 GHz or higher, and liquid crystal used in environments with large temperature changes. It is very useful as a member for devices such as antennas, lasers, and the like that involve drilling.

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CN201980020056.4A CN111886209A (zh) 2018-03-20 2019-03-13 玻璃基板、液晶天线和高频装置
EP19771064.3A EP3770129B1 (en) 2018-03-20 2019-03-13 Glass substrate, liquid crystal antenna and high-frequency device
KR1020207026692A KR102714428B1 (ko) 2018-03-20 2019-03-13 유리 기판, 액정 안테나 및 고주파 디바이스
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US17/022,365 US11239549B2 (en) 2018-03-20 2020-09-16 Glass substrate, liquid crystal antenna and high-frequency device
US17/550,080 US11594811B2 (en) 2018-03-20 2021-12-14 Glass substrate, liquid crystal antenna and high-frequency device
US18/157,213 US12157698B2 (en) 2018-03-20 2023-01-20 Glass substrate, liquid crystal antenna and high-frequency device
JP2024062281A JP2024083508A (ja) 2018-03-20 2024-04-08 ガラス基板、液晶アンテナ及び高周波デバイス
US18/892,859 US20250011220A1 (en) 2018-03-20 2024-09-23 Glass substrate, liquid crystal antenna and high-frequency device

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US11168018B2 (en) 2013-08-15 2021-11-09 Corning Incorporated Aluminoborosilicate glass substantially free of alkali oxides
US20220024803A1 (en) * 2019-04-12 2022-01-27 AGC Inc. Glass plate and process for producing the same
WO2022054694A1 (ja) * 2020-09-08 2022-03-17 日本電気硝子株式会社 ガラス及びそれを用いた誘電特性の測定方法
JP2022522986A (ja) * 2019-01-18 2022-04-21 コーニング インコーポレイテッド 電子デバイス用の低誘電損失ガラス
USRE49307E1 (en) 2013-08-15 2022-11-22 Corning Incorporated Alkali-doped and alkali-free boroaluminosilicate glass
US20230051724A1 (en) * 2020-01-03 2023-02-16 Corning Incorporated Strengthened glass articles and consumer electronic products including the same
CN117147321A (zh) * 2023-10-30 2023-12-01 新疆泰齐石油科技有限公司 一种实验岩样裂缝形态表征方法及实验装置

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KR20260013303A (ko) * 2018-03-20 2026-01-27 에이지씨 가부시키가이샤 유리 기판, 액정 안테나 및 고주파 디바이스
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