WO2019179395A1 - 显示基板及其制造方法 - Google Patents

显示基板及其制造方法 Download PDF

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Publication number
WO2019179395A1
WO2019179395A1 PCT/CN2019/078514 CN2019078514W WO2019179395A1 WO 2019179395 A1 WO2019179395 A1 WO 2019179395A1 CN 2019078514 W CN2019078514 W CN 2019078514W WO 2019179395 A1 WO2019179395 A1 WO 2019179395A1
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Prior art keywords
layer
light
electron transport
substrate
electrode
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PCT/CN2019/078514
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English (en)
French (fr)
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陈右儒
陈卓
禹钢
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京东方科技集团股份有限公司
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Priority to US16/641,354 priority Critical patent/US11205762B2/en
Publication of WO2019179395A1 publication Critical patent/WO2019179395A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80521—Cathodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/822—Cathodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays

Definitions

  • Embodiments of the present disclosure relate to a display substrate and a method of fabricating the same.
  • Light-emitting devices commonly used in display substrates generally include an Organic Light-Emitting Diode (OLED) or Quantum Dot Light Emitting Diodes (QLED).
  • OLED Organic Light-Emitting Diode
  • QLED Quantum Dot Light Emitting Diodes
  • the QLED display substrate generally includes a driving circuit layer and a QLED light emitting device and the like which are sequentially disposed on the base substrate.
  • the driving circuit layer includes, for example, a plurality of thin film transistors (TFTs) and a capacitor.
  • the QLED light emitting device usually includes an anode. Quantum dot material layer and cathode structure.
  • At least one embodiment of the present disclosure provides a display substrate including a base substrate and a light emitting device; the light emitting device includes a first electrode, a luminescent material layer, and a second electrode sequentially stacked on the base substrate, The light-emitting side of the luminescent material layer is provided with a microprism structure.
  • the luminescent material layer is one of the luminescent functional layers
  • the second electrode is located on the light emitting side of the illuminating functional layer, and the illuminating functional layer and the illuminating functional layer
  • the microprism structure is disposed between the second electrodes.
  • the light emitting function layer further includes an electron transport layer, the electron transport layer is located on a light exiting side of the light emitting material layer, and the electron transport layer has the microprism structure.
  • the second electrode and the electron transport layer are conformal.
  • the display substrate provided by at least one embodiment of the present disclosure further includes a driving circuit layer and an encapsulation layer; the driving circuit layer is located between the substrate substrate and the light emitting device, and the encapsulation layer is away from the second electrode One side of the base substrate; wherein the second electrode and the encapsulation layer are conformal to the electron transport layer.
  • the luminescent material layer is one of the luminescent functional layers, and the luminescent functional layer further includes a plurality of functional layers on the light emitting side of the luminescent material layer.
  • a surface of one of the plurality of functional layers has the microprism structure.
  • the outermost layer of the light emitting function layer on the light exiting side has a microprism structure.
  • the first layer of the light-emitting function layer between the luminescent material layer and the outermost layer on the light-emitting side has a microprism structure, and the illuminating A functional layer of the functional layer on the light exit side of the first layer conforms to the first layer.
  • the plurality of functional layers include an electron transport layer and an electron injection layer.
  • the functional layer having the microprism structure on the surface and the microprism structure are an integral structure formed of the same material.
  • the microprism structure includes a bottom surface and at least one side surface that is in contact with the bottom surface, wherein at least one of the side surfaces meets at least the bottom surface
  • the angle between a portion and the bottom surface is greater than or equal to 45 degrees and less than or equal to 90 degrees.
  • the microprism structure has a triangular, rectangular, trapezoidal or curved cross section in a direction perpendicular to a surface of the display substrate.
  • At least one embodiment of the present disclosure provides a method of manufacturing a display substrate, including: providing a substrate; and forming a light emitting device on the substrate, including sequentially forming a first electrode, a luminescent material on the substrate And a second electrode; wherein a microprism structure is formed on a light exiting side of the luminescent material layer.
  • forming the microprism structure on the light exiting side of the luminescent material layer includes: forming an electron transport layer on the light emitting side of the luminescent material layer, and forming the electron transport layer by using the electron transport layer The microprism structure.
  • the method provided by at least one embodiment of the present disclosure further includes: forming a driving circuit layer on the base substrate, wherein the light emitting device is formed on a side of the driving circuit layer away from the substrate substrate; And forming an encapsulation layer on a side of the second electrode remote from the substrate, wherein the second electrode and the encapsulation layer are formed to conform to the electron transport layer.
  • forming the microprism structure by using the electron transport layer includes: using an ink containing metal particles on a surface of the electron transport layer away from the substrate Forming a mask layer; etching the electron transport layer through the mask layer to form the microprism structure on a surface of the electron transport layer away from the substrate substrate; removing the mask layer.
  • forming the mask layer includes: forming the mask layer by printing or spin coating with the ink, and transmitting the electron through the mask layer
  • Etching the layer includes: etching the electron transport layer by an inductively coupled plasma process or a high-density plasma process, and removing the mask layer comprises: adsorbing the metal particles by using a magnet or an electromagnet to remove the The mask layer.
  • the flow rate of the plasma gas in the etching environment is adjusted to control the etching of the electron transport layer. a rate; wherein the flow rate of the plasma gas is positively correlated with the etch rate.
  • the metal particles are spherical, and the metal particles have a diameter of 50 nm to 100 ⁇ m.
  • the metal particles include triiron tetroxide.
  • the electron transport layer comprises zinc oxide.
  • the second electrode is a cathode
  • forming the second electrode includes: forming the microprism structure by evaporation using lithium fluoride or aluminum
  • the second electrode is conformally formed on the surface of the electron transport layer.
  • the second electrode is a cathode
  • forming an encapsulation layer on the second electrode includes: using indium tin oxide or indium zinc oxide by sputtering
  • the encapsulation layer is conformally formed on a side of the two electrodes remote from the substrate.
  • FIG. 1A is a schematic structural diagram of a display substrate according to some embodiments of the present disclosure.
  • FIG. 1B is a schematic structural diagram of a display substrate according to some embodiments of the present disclosure.
  • 1C is a schematic structural diagram of a display substrate according to some embodiments of the present disclosure.
  • 1D is a schematic structural diagram of a display substrate according to some embodiments of the present disclosure.
  • FIG. 2 is a schematic structural diagram of another display substrate according to some embodiments of the present disclosure.
  • 3A is a schematic structural diagram of an electron transport layer according to some embodiments of the present disclosure.
  • FIG. 3B is a schematic structural diagram of another electron transport layer according to some embodiments of the present disclosure.
  • 3C is a schematic structural diagram of an electron transport layer according to some embodiments of the present disclosure.
  • 3D is a schematic structural diagram of an electron transport layer according to some embodiments of the present disclosure.
  • FIG. 4 is a schematic structural diagram of still another display substrate according to some embodiments of the present disclosure.
  • FIG. 5 is a flowchart of a method of manufacturing a display substrate according to some embodiments of the present disclosure
  • FIG. 6 is a flowchart of another method of manufacturing a display substrate according to some embodiments of the present disclosure.
  • FIG. 7 is a flow chart of a method of forming a microprism structure provided by some embodiments of the present disclosure.
  • the light emitting device of the display substrate includes an organic light emitting diode (OLED), a quantum dot light emitting diode (QLED), and the like.
  • OLED organic light emitting diode
  • QLED quantum dot light emitting diode
  • the hierarchical structure in OLED devices is generally made of organic materials
  • the hierarchical structure in QLED devices is generally made of inorganic materials.
  • an encapsulation layer of an OLED device generally includes an inorganic material, an organic material, or a combination of an inorganic material and an organic material
  • an encapsulation layer of the QLED device generally includes an inorganic material, for example, an inorganic material including indium tin oxide or indium zinc oxide.
  • the refractive index of the inorganic material is high, when the light-emitting device emits light, the light is easily totally reflected from the package layer into the air, thereby causing the light-emitting device to have low light-emitting efficiency.
  • the refractive index of the inorganic material is generally higher than the refractive index of the organic material, such as the refractive index of the encapsulation layer in the QLED device.
  • the refractive index of the encapsulation layer in the OLED device is usually 1.2 to 1.4. Therefore, when the device emits light, the light is easily totally reflected from the encapsulation layer into the air, resulting in low light extraction efficiency of the device.
  • QLED devices may be more susceptible to total reflection when entering the air from the package layer during light-emitting, resulting in lower light-emitting efficiency of the QLED device.
  • At least one embodiment of the present disclosure provides a display substrate, a method of manufacturing the same, and a display device, which can solve the problem of low light-emitting efficiency of a light-emitting device, such as an OLED device or a QLED device, in the related art.
  • a display substrate which may include a base substrate 101 and a light emitting device, as shown in FIG. 1A.
  • the light emitting device includes a first electrode 103, a light emitting material layer 106, and a second electrode 108 which are sequentially laminated on the base substrate 101, and a light emitting side (for example, an upper side in the drawing) of the light emitting material layer 106 is provided with a microprism structure, for example, Multiple microprism structures.
  • the luminescent material layer 106 is one of the luminescent functional layers 120
  • the second electrode 108 is located on the light emitting side of the luminescent functional layer 120
  • the microprism is disposed between the luminescent functional layer 120 and the second electrode 108. structure.
  • the light-emitting function layer 120 includes a light-emitting material layer 106 and an electron transport layer 107 on a side of the light-emitting material layer 106 away from the substrate substrate 101 (ie, the upper side in the drawing),
  • the electron transport layer 107 includes a microprism structure M.
  • the microprism structure M is disposed between the light emitting function layer 120 and the second electrode 108.
  • the second electrode 108 and the electron transport layer 107 are conformal such that the interface between the second electrode 108 and the electron transport layer 107 is a non-flat interface.
  • the functional layer there may be other functional layers between the light emitting function layer 108 and the second electrode 120, and the functional layer has a microprism structure, for example, the light emitting function layer 108 and the second electrode.
  • the conductive layer 180 includes, for example, a material such as zinc oxide or indium tin oxide.
  • the luminescent functional layer 120 includes a plurality of functional layers (eg, the electron transport layer 107 and the electron injection layer 117 described below) on the light exiting side of the luminescent material layer 106, the surface of one of the plurality of functional layers It has a microprism structure.
  • the first layer of the light-emitting function layer 120 between the light-emitting material layer 106 and the outermost layer on the light-emitting side has a microprism structure
  • the functional layer of the light-emitting functional layer on the light-emitting side of the first layer and the first layer shape For example, the outermost layer of the light-emitting function layer 120 on the light-emitting side has a microprism structure.
  • the light-emitting function layer 120 includes a light-emitting material layer 106 and an electron transport layer 107 and electron injection laminated in this order away from the base substrate 101 side of the light-emitting material layer 106.
  • Layer 117 For example, as shown in FIG. 1B, the electron transport layer 107 includes a microprism structure M. At this time, the first layer between the light-emitting material layer 106 and the outermost layer on the light-emitting side of the light-emitting function layer 120 is the electron transport layer 107.
  • the electron injection layer 117 includes a microprism structure M.
  • the outermost layer on the light-emitting side of the light-emitting function layer 120 has a microprism structure.
  • the second electrode 108 above the light-emitting function layer 120 is conformed to the electron transport layer 107 or the electron injection layer 117.
  • the functional layer having a microprism structure on the surface and the microprism structure are a unitary structure formed of the same material.
  • the functional layer having a microprism structure on the surface and the microprism structure may also be a non-integral structure, that is, two structures that are independent.
  • the light-emitting function layer 120 further includes a hole transport layer 105 and a hole injection layer 104 which are sequentially laminated on the side of the light-emitting material layer 106 close to the base substrate 101.
  • the electron transport layer 107, the electron injection layer 117, the hole transport layer 105, and the hole injection layer 104 in the light emitting function layer may be selectively disposed.
  • the luminescent material layer 106 includes a quantum dot luminescent material, and since the electron-transporting ability of the quantum dot luminescent material is strong, the electron injecting layer 117 may not be provided.
  • the luminescent material layer 106 includes an organic luminescent material, and at this time, the above functional layers (including the hole injection layer 104, the hole transport layer 105, the electron transport layer 107, and the electron injection layer 117) may be disposed, In order to improve the luminous efficiency of the light emitting device.
  • the above functional layers including the hole injection layer 104, the hole transport layer 105, the electron transport layer 107, and the electron injection layer 117.
  • the display substrate further includes a driving circuit layer 102 and an encapsulation layer 109 disposed on the base substrate 101.
  • the driving circuit layer 102 includes a plurality of thin film transistors TFT and a capacitor, and an encapsulation layer 109 is overlaid on the light emitting device to encapsulate the light emitting device.
  • a plurality of microprism structures M are formed on the surface of the electron transport layer 107 remote from the substrate 101, and the second electrode 108 and the encapsulation layer 109 are conformally disposed on the electron transport layer 107 away from the substrate.
  • the second electrode 108 and the encapsulation layer 109 are thus non-flat structures.
  • the second electrode 108 and the encapsulation layer 109 are conformally disposed on the surface of the electron transport layer 107 away from the substrate, that is, the non-planar contact between the electron transport layer 107 and the second electrode 108, The two electrodes 108 are in non-planar contact with the encapsulation layer 109.
  • the first electrode 103 serves as the anode of the light emitting device and the second electrode 108 serves as the cathode of the light emitting device, which is not limited by the embodiment of the present disclosure.
  • a structure composed of an anode, a hole injection layer, a hole transport layer, a light-emitting material layer, an electron transport layer, and a cathode may also be referred to as a self-luminous device.
  • the self-luminous device may be a QLED device or an OLED device
  • the display substrate may be a top emission type structure or a bottom emission type structure.
  • the light emitting side of the QLED device is a side of the QLED device close to the substrate, and for example, a side of the luminescent material layer close to the substrate is provided with a microprism structure.
  • the surface of the functional layer on the side close to the substrate substrate includes a microprism structure.
  • the luminescent material layer may include a quantum dot material capable of emitting light of three colors of red, green, and blue to form red pixels, green pixels, and Blue pixels.
  • electron transport layer 107 includes zinc oxide and second electrode 108 acts as a cathode, including lithium fluoride or aluminum.
  • a film layer prepared from lithium fluoride or aluminum has a thickness of less than 10 nm to ensure light transmittance of the film layer.
  • a conductive layer may also be formed on the film layer prepared from lithium fluoride or aluminum, and the conductive layer may function as an encapsulation layer and may serve as an encapsulation layer.
  • the conductive layer includes indium tin oxide or indium zinc oxide, and the conductive layer may have a thickness of 50 to 100 nm.
  • the refractive index of zinc oxide is more than 2
  • the refractive index of indium tin oxide or indium zinc oxide is 1.4 to 2
  • the refractive index of lithium fluoride and aluminum is 0.6 to 1.6.
  • aluminum has a refractive index of 0.63 for light having a wavelength of 450 nm, a refractive index of 1.01 for light having a wavelength of 550 nm, and a refractive index of 1.56 for light having a wavelength of 650 nm.
  • some embodiments of the present disclosure provide a display substrate.
  • the light-emitting side of the luminescent material layer is provided with a microprism structure, for example, the electron transport layer or the electron injection layer has a microprism on a surface away from the substrate.
  • a structure such that an interface between the second electrode and the electron transport layer or the electron injection layer may be a non-flat interface, which is emitted when light is emitted from the electron transport layer or the electron injection layer into the second electrode (eg, cathode) and the encapsulation layer
  • the curvature of different positions on the surface is different, the incident angle of the light is not easy to satisfy the condition of total reflection, and the light of total reflection is reduced.
  • the encapsulation layer is a non-flat structure, when the light passes through the encapsulation layer from the inside of the display substrate When emitted into the external environment, the curvature of different positions on the exit surface is different, and the incident angle of the light is not easy to satisfy the condition of total reflection, and the total reflected light is reduced, thereby improving the light-emitting efficiency of the display substrate.
  • the hole transport layer 105 or the hole injection layer 104 may include a microprism structure, or the functional function layer 102 may further include other functional layers, and the functional layer is used to form a microprism structure.
  • the embodiment of the present disclosure does not limit the specific arrangement position of the microprism structure as long as the surface of the light-emitting function layer 102 that is away from the base substrate 101 is formed into an uneven structure.
  • the thin film transistor TFT in the driving circuit layer 102 may include a gate metal pattern, a gate insulating layer, an active layer, a source/drain metal pattern, and a passivation layer which are sequentially formed on the base substrate.
  • the gate metal pattern may be prepared from metal molybdenum (Mo) and may have a thickness of 200 nm; the gate insulating layer may be prepared from silicon dioxide (SiO 2 ) and may have a thickness of 150 nm.
  • the active layer may be prepared from Indium Gallium Zinc Oxide (IGZO) and may have a thickness of 40 nm.
  • the source and drain metal patterns may be prepared from metal molybdenum and may have a thickness of 200 nm; the passivation layer It can be prepared from silica and can have a thickness of 300 nm.
  • the display substrate may further include a pixel defining layer 110.
  • the pixel defining layer 110 includes a plurality of openings to define a plurality of pixel cells of the display substrate.
  • the first electrode 103 for example, an anode, which may also be referred to as a pixel electrode
  • the pixel defining layer 110 may be sequentially formed on the substrate substrate 101 on which the driving circuit layer 102 is formed, and then A hole injection layer, a hole transport layer, a light-emitting material layer, an electron transport layer (and an electron injection layer), and the like are sequentially formed in a plurality of openings of the pixel defining layer 110, and then a cathode and an encapsulation layer are formed (not shown) And other structures.
  • the first electrode 103 as an anode may be prepared from Indium Tin Oxide (ITO) and may have a thickness of 40 nm; the pixel defining layer 110 may be prepared from an acrylic material, and the thickness thereof may be At 0.7 micrometers, the slope angle of the pixel defining layer 110 (ie, the angle between the slope of the pixel defining layer and the bottom surface) w may be 60 degrees.
  • ITO Indium Tin Oxide
  • the pixel defining layer 110 may be prepared from an acrylic material, and the thickness thereof may be At 0.7 micrometers, the slope angle of the pixel defining layer 110 (ie, the angle between the slope of the pixel defining layer and the bottom surface) w may be 60 degrees.
  • the microprism structure includes a bottom surface M1 and at least one side surface M2 that is in contact with the bottom surface M1, and a portion of the at least one side surface M2 that meets at least the bottom surface M1 and the bottom surface
  • the angle ⁇ is between 45° and 90° and can be equal to the end value.
  • the side surface may be a curved surface or a curved surface rather than a flat plane, and the angle between the curved surface or the curved surface and the bottom surface refers to the angle between the tangent plane and the bottom surface of the point on the surface.
  • the cross section of the microprism structure M on the electron transport layer 107 may be rectangular in a direction perpendicular to the substrate, or as shown in FIG. 3B, the microprism on the electron transport layer 107.
  • the cross section of the structure M may be triangular; or, as shown in FIG. 3C, the cross section of the microprism structure M on the electron transport layer 107 may be trapezoidal; or, as shown in FIG. 3D, the microprism structure M on the electron transport layer 107
  • the cross section may be curved, and the embodiment of the present disclosure does not limit the specific shape of the microprism structure.
  • the display substrate may further include a circular polarizing plate 111 disposed on a side of the encapsulating layer 109 away from the substrate 101.
  • the circular polarizing plate 111 can prevent the user from displaying from the display substrate under strong light conditions.
  • the side of the surface is seen to show the structure inside the substrate, which affects the appearance of the display device.
  • the display substrate provided by the embodiment of the present invention has a microprism structure on the light-emitting side of the luminescent material layer, for example, a microprism structure on the surface of the electron transport layer or the electron injection layer remote from the substrate substrate. Therefore, the interface between the second electrode and the electron transport layer or the electron injection layer may be a non-flat interface, and when light is emitted from the electron transport layer or the electron injection layer into the second electrode and the encapsulation layer, different positions on the exit surface The curvature is different, the incident angle of the light is not easy to satisfy the condition of total reflection, and the total reflection is reduced.
  • the encapsulation layer is a non-flat structure
  • the light is emitted from the inside of the display substrate through the encapsulation layer to the external environment.
  • the curvature is different at different positions on the exit surface, the incident angle of the light is less likely to satisfy the condition of total reflection, and the total reflected light is reduced, thereby improving the light-emitting efficiency of the display substrate.
  • An embodiment of the present disclosure provides a display device including the display substrate provided by any of the above embodiments.
  • the display device has a high light extraction efficiency.
  • the display device may be any product or component having a display function such as a liquid crystal panel, an electronic paper, a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, or the like.
  • a display function such as a liquid crystal panel, an electronic paper, a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, or the like.
  • the display device provided by the embodiment of the present invention has a microprism structure on the light-emitting side of the luminescent material layer, for example, a microprism structure on the surface of the electron transport layer or the electron injection layer away from the substrate. Therefore, the interface between the second electrode and the electron transport layer or the electron injection layer may be a non-flat interface, and when the light is emitted from the electron transport layer or the electron injection layer into the second electrode (for example, the cathode) and the encapsulation layer, the exit surface The curvature of different positions is different, the incident angle of the light is not easy to satisfy the condition of total reflection, and the light of total reflection is reduced.
  • the encapsulation layer in the display substrate is a non-flat structure, when the light is from the inside of the display substrate When the encapsulation layer is emitted into the external environment, the curvature of different positions on the exit surface is different, and the incident angle of the light is not easy to satisfy the condition of total reflection, and the total reflection light is reduced, thereby improving the light extraction efficiency of the display substrate.
  • Embodiments of the present disclosure also provide a method of fabricating a display substrate.
  • the manufacturing method includes: providing a base substrate; and forming a light emitting device on the base substrate, comprising sequentially forming a first electrode, a light emitting material layer, and a second electrode on the base substrate, and forming on a light emitting side of the light emitting material layer Microprism structure.
  • the luminescent material layer is one of the luminescent functional layers
  • the second electrode is formed on the light exiting side of the luminescent functional layer
  • a microprism structure is formed between the luminescent functional layer and the second electrode.
  • the luminescent functional layer further includes a plurality of functional layers on the light exiting side of the luminescent material layer, the surface of one of the plurality of functional layers being formed as a microprism structure.
  • forming a microprism structure on a light exiting side of a luminescent material layer includes: forming an electron transport layer on a side of the luminescent material layer away from the substrate substrate, and forming a microprism structure by using the electron transport layer For example, a microprism structure is formed on a surface of the electron transport layer remote from the substrate.
  • forming a light-emitting functional layer includes forming a light-emitting material layer and sequentially forming an electron transport layer and an electron injection layer on a side of the light-emitting material layer away from the substrate substrate, for example, see FIG. 1B, after the electron transport layer is formed, a microprism structure is formed on a surface of the electron transport layer away from the substrate, or, referring to FIG. 1C, after the electron injection layer is formed, the electron injection layer is away from the substrate. The surface forms a microprism structure.
  • FIG. 5 is a flowchart of a method for manufacturing a display substrate according to some embodiments of the present disclosure. As shown in FIG. 5, the method may include:
  • Step 201 providing a substrate.
  • Step 202 sequentially forming a driving circuit layer, a first electrode, a hole injection layer, a hole transport layer, a luminescent material layer, and an electron transport layer on the base substrate.
  • Step 203 forming a plurality of microprism structures on a surface of the electron transport layer remote from the substrate.
  • Step 204 Formally forming a second electrode on the electron transport layer formed with a plurality of microprism structures.
  • Step 205 Formally forming an encapsulation layer on a side of the second electrode remote from the substrate substrate, so that the encapsulation layer is a non-flat structure.
  • FIG. 1A The structure of the display substrate formed by the above method can be seen in FIG. 1A.
  • the manufacturing method of the display substrate forms a plurality of microprism structures on the light emitting side of the luminescent material layer, for example, on the surface of the electron transport layer or the electron injection layer away from the substrate.
  • a microprism structure and sequentially forming a second electrode (for example, a cathode) and an encapsulation layer on an electron transport layer or an electron injection layer formed with a plurality of microprism structures, so that the encapsulation layer is a non-flat structure, on the one hand,
  • the surface of the electron transport layer or the electron injection layer away from the substrate substrate has a microprism structure.
  • the curvatures at different positions on the exit surface are different, and the incident angle of the light is not easily satisfied.
  • the condition of total reflection occurs, and the light that causes total reflection is reduced.
  • the encapsulation layer is a non-flat structure, when the light is emitted from the inside of the display substrate through the encapsulation layer to the external environment, the curvature at different positions on the exit surface Different, the incident angle of the light is not easy to meet the condition of total reflection, and the light that causes total reflection is reduced, thus improving Light extraction efficiency of the display substrate.
  • FIG. 6 is a flowchart of another method for manufacturing a display substrate according to an embodiment of the present disclosure. As shown in FIG. 6, the method may include:
  • Step 301 providing a substrate.
  • the base substrate may be made of a transparent material such as glass, silicon wafer, quartz, or plastic, and cleaned using standard methods.
  • Step 302 forming a driving circuit layer on the base substrate.
  • the driving circuit layer includes a structure of a plurality of thin film transistors TFT and the like.
  • the TFT is a top gate type TFT, and may be a bottom gate type TFT. This embodiment of the present disclosure does not limit this.
  • the process of forming a bottom gate type TFT on a base substrate may include:
  • one patterning process may include: photoresist coating, exposure, development, etching, and photoresist stripping.
  • the gate metal pattern and the source/drain metal pattern may also be made of aluminum or the like, and the gate insulating layer and the passivation layer may also be The material of the present disclosure does not limit the material and thickness of each layer structure in the TFT.
  • Step 303 sequentially, on the base substrate on which the driving circuit layer is formed, a first electrode, a pixel defining layer, a hole injecting layer, a hole transporting layer, a light emitting material layer, and an electron transporting layer.
  • the first electrode is an anode of the light emitting device
  • a metal layer may be formed by depositing ITO on the base substrate on which the driving circuit layer is formed, and formed by a patterning process; and then, the base substrate on which the first electrode is formed
  • the acryl layer is formed by spin coating or depositing an acryl material
  • a pixel defining layer is formed by a process such as photolithography, curing, or the like.
  • the patterned pixel defining layer includes a plurality of openings to define a plurality of pixel cells of the display substrate.
  • the pixel defining layer may have a slope angle of 60 degrees and the pixel defining layer may have a thickness of 0.7 microns.
  • a hole injecting layer and a hole transporting layer are respectively formed in a plurality of openings of the pixel defining layer by a process such as inkjet printing.
  • the hole injection layer may be prepared from a thermoplastic polymer PEDOT:PSS (3,4-ethylenedioxythiophene/polystyrene sulfonate), and the hole transport layer may be composed of 1, 2, 4, 5 - 4 (Trifluoromethyl)benzene (1,2,4,5-Tetrakis (trifluoromethyl) Benzene, TFB) is prepared, the total thickness of the hole injection layer and the hole transport layer may be 50-100 nm;
  • the inkjet printing method forms a luminescent material layer (for example, a quantum dot luminescent material layer or an organic luminescent material layer), and then forms an electron transporting layer by inkjet printing or sputtering, and the electron transporting layer may have a thickness of 30 to 200 nm.
  • the electron transport layer can be prepared from zinc oxide.
  • an electron injection layer may also be formed on the electron transport layer, and the electron injection layer may be prepared from cerium oxide (Cs 2 O), cesium carbonate (Cs 2 CO 3 ), or the like.
  • Step 304 forming a microprism structure on a surface of the electron transport layer remote from the substrate.
  • a plurality of microprism structures are formed on a surface of the electron transport layer remote from the substrate.
  • a method flow diagram for forming a plurality of microprism structures can be as shown in FIG. 7, the method comprising:
  • Step 3041 forming a mask layer on the surface of the electron transport layer away from the substrate by using ink containing metal particles.
  • a mask layer is formed on the electron transport layer by printing or spin coating.
  • the metal fine particle material may be triiron tetroxide (Fe 3 O 4), the metal particles may be spherical, diameter of the metal particles may be from 50 nanometers to 100 microns, the present disclosed embodiment of the shape of the metal particles, the material, and The size is not limited.
  • Step 3042 etching the electron transport layer through the mask layer to form a microprism structure on a surface of the electron transport layer away from the substrate.
  • the electron transport layer is etched by an inductively coupled plasma process or a high-density plasma process to form a plurality of micro-electrodes on the surface of the electron transport layer away from the substrate. Prism structure.
  • the flow rate of the plasma gas in the etching environment can be adjusted to control the etching rate of the electron transport layer; wherein the flow rate and the etching rate of the plasma gas are positive Related.
  • the etched microprism structure when the electron transport layer is etched by an inductively coupled plasma process, the etched microprism structure may be columnar, as shown, for example, in FIG. 3A; when the electron transport layer is etched using a high density plasma process When the flow rate of the plasma gas is 0, the microprism structure obtained by etching may have a triangular pyramid shape. For example, referring to FIG. 3B, when the flow rate of the plasma gas is 50 standard milliliters per minute (Standard Milliliter per Minute, sccm) Because of the faster etching rate, the microprism structure obtained by etching can be columnar.
  • the flow rate of the plasma gas may be adjusted to 0, 5 sccm, or 50 sccm, which is not limited by the embodiments of the present disclosure.
  • the plasma gas may be oxygen, nitrogen or argon or the like.
  • Step 3043 removing the mask layer.
  • a metal magnet may be adsorbed by a strong magnet (eg, a permanent magnet) or an electromagnet to remove the mask layer.
  • a strong magnet eg, a permanent magnet
  • an electromagnet to remove the mask layer.
  • a magnet having a magnetic induction of more than 1 Tesla can be used, and in an air or a non-polar solvent (for example, an orthogonal solvent of zinc oxide, that is, a solvent in which zinc oxide cannot be dissolved), at a position of 1 ⁇ m or more from the mask layer.
  • the metal particles are adsorbed to remove the mask layer. Further, by adsorbing the metal fine particles at a position of 1 ⁇ m or more from the mask layer, damage to the structure of the display substrate can be avoided.
  • a plurality of microprism structures may be formed on a side of the electron transport layer away from the substrate by a patterning process, which is not limited in the embodiment of the present disclosure.
  • Step 305 forming a second electrode conformally formed on the electron transport layer formed with the microprism structure.
  • the second electrode is a cathode, and can be formed conformally on the electron transport layer formed with a plurality of microprism structures by vapor deposition using lithium fluoride or aluminum, and the film layer prepared from lithium fluoride or aluminum is formed.
  • the thickness is less than 10 nanometers to ensure the transparency of the film layer.
  • Step 306 Formally forming an encapsulation layer on a side of the second electrode remote from the substrate, such that the encapsulation layer is a non-flat structure.
  • the encapsulating layer may be conformally formed on the side of the second electrode remote from the substrate by sputtering using indium tin oxide or indium zinc oxide.
  • Step 307 forming a circular polarizing plate on a side of the encapsulating layer away from the substrate.
  • a circularly polarizing plate may be attached to a side of the encapsulating layer remote from the substrate to avoid obscuring the structure inside the display substrate from the side of the display surface of the display substrate under strong light conditions, thereby affecting the appearance of the display device.
  • the manufacturing method of the display substrate forms a plurality of microprism structures on the light emitting side of the luminescent material layer, for example, on the surface of the electron transport layer or the electron injection layer away from the substrate.
  • the microprism structure and the cathode and the encapsulation layer are conformally formed on the electron transport layer or the electron injection layer formed with the plurality of microprism structures, so that the encapsulation layer is a non-flat structure.
  • the electron transport layer or the electron injection layer has a microprism structure on a surface away from the substrate substrate, when the light is emitted from the electron transport layer or the electron injection layer into the second electrode (for example, the cathode) and the encapsulation layer, the exit surface The curvature of different positions is different, the incident angle of the light is not easy to satisfy the condition of total reflection, and the light of total reflection is reduced.
  • the encapsulation layer is a non-flat structure, when the light is emitted from the inside of the display substrate through the encapsulation layer When the environment is exposed to the environment, the curvature of different positions on the exit surface is different, and the incident angle of the light is not easy to satisfy the condition of total reflection, and the total reflection light is reduced, thereby improving the light-emitting efficiency of the display substrate.
  • “conformal” refers to having a common topography or maintaining the same shape, for example, when the second layer is disposed on the first layer, the second layer and the first layer The layers have the same or similar surface topography.

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Abstract

一种显示基板及其制造方法。该制造方法包括：提供衬底基板(101)；以及在衬底基板(101)上形成发光器件，包括在衬底基板(101)上依次形成第一电极(103)、发光材料层(106)和第二电极(108)；并且在发光材料层(106)的出光侧形成微棱镜结构。本公开实施例提供的技术方案至少解决了相关技术中发光器件，例如OLED和QLED器件的出光效率较低的问题。

Description

显示基板及其制造方法
本申请要求于2018年3月19日递交的中国专利申请第201810224703.0号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。
技术领域
本公开的实施例涉及一种显示基板及其制造方法。
背景技术
显示基板中常用的发光器件通常包括有机发光二极管(Organic Light-Emitting Diode，OLED)或者量子点发光二极管(Quantum Dot Light Emitting Diodes，QLED)等。
随着显示技术的快速发展，量子点发光二极管器件成为了显示领域的研究重点。QLED显示基板通常包括依次设置在衬底基板上的驱动电路层和QLED发光器件等，驱动电路层例如包括多个薄膜晶体管(Thin Film Transistor，TFT)和电容等结构，QLED发光器件通常包括阳极、量子点材料层和阴极等结构。
发明内容
本公开至少一实施例提供一种显示基板，该显示基板包括衬底基板和发光器件；发光器件包括在所述衬底基板上依次叠层的第一电极、发光材料层和第二电极，所述发光材料层的出光侧设置有微棱镜结构。
例如，本公开至少一实施例提供的显示基板中，所述发光材料层是发光功能层中的一层，所述第二电极位于所述发光功能层的出光侧，所述发光功能层与所述第二电极之间设置有所述微棱镜结构。
例如，本公开至少一实施例提供的显示基板中，所述发光功能层还包括电子传输层，所述电子传输层位于所述发光材料层的出光侧，所述电子传输层具有所述微棱镜结构。
例如，本公开至少一实施例提供的显示基板中，所述第二电极与所述电 子传输层保形。
例如，本公开至少一实施例提供的显示基板还包括驱动电路层和封装层；驱动电路层位于所述衬底基板与所述发光器件之间，封装层在所述第二电极的远离所述衬底基板的一侧；其中，所述第二电极和所述封装层与所述电子传输层保形。
例如，本公开至少一实施例提供的显示基板中，所述发光材料层是发光功能层中的一层，所述发光功能层还包括位于所述发光材料层的出光侧的多个功能层，所述多个功能层之一的表面具有所述微棱镜结构。
例如，本公开至少一实施例提供的显示基板中，所述发光功能层的位于所述出光侧的最外层具有微棱镜结构。
例如，本公开至少一实施例提供的显示基板中，所述发光功能层的位于所述发光材料层和位于所述出光侧的最外层之间的第一层具有微棱镜结构，所述发光功能层的位于所述第一层的出光侧的功能层与所述第一层保形。
例如，本公开至少一实施例提供的显示基板中，所述多个功能层包括电子传输层和电子注入层。
例如，本公开至少一实施例提供的显示基板中，表面具有所述微棱镜结构的功能层与所述微棱镜结构为由同种材料形成的一体结构。
例如，本公开至少一实施例提供的显示基板中，所述微棱镜结构包括底面和与所述底面相接的至少一个侧表面，其中，至少一个所述侧表面的至少与所述底面相接的一部分与所述底面的夹角大于等于45°且小于等于90°。
例如，本公开至少一实施例提供的显示基板中，在垂直于所述显示基板的表面的方向上，所述微棱镜结构的截面呈三角形、矩形、梯形或者弧形。
本公开至少一实施例提供一种显示基板的制造方法，包括：提供衬底基板；以及在所述衬底基板上形成发光器件，包括在所述衬底基板上依次形成第一电极、发光材料层和第二电极；其中，在所述发光材料层的出光侧形成微棱镜结构。
例如，本公开至少一实施例提供的方法中，在所述发光材料层的出光侧形成微棱镜结构包括：在所述发光材料层的出光侧形成电子传输层，并利用所述电子传输层形成所述微棱镜结构。
例如，本公开至少一实施例提供的方法还包括：在所述衬底基板上形成驱动电路层，其中，所述发光器件形成在所述驱动电路层的远离所述衬底基 板的一侧；以及在所述第二电极的远离所述衬底基板的一侧形成封装层，其中，所述第二电极和所述封装层形成为与所述电子传输层保形。
例如，本公开至少一实施例提供的方法中，利用所述电子传输层形成所述微棱镜结构，包括：采用包含金属微粒的墨水，在所述电子传输层远离所述衬底基板的表面上形成掩模层；通过所述掩模层对所述电子传输层进行刻蚀，以在所述电子传输层远离所述衬底基板的表面形成所述微棱镜结构；去除所述掩膜层。
例如，本公开至少一实施例提供的方法中，形成所述掩模层包括：采用所述墨水通过打印或旋涂的方式形成所述掩模层，通过所述掩模层对所述电子传输层进行刻蚀包括：采用感应耦合等离子体工艺或高密度等离子体工艺对所述电子传输层进行刻蚀，去除所述掩膜层包括：采用磁铁或电磁铁吸附所述金属微粒，以去除所述掩膜层。
例如，本公开至少一实施例提供的方法中，在对所述电子传输层进行刻蚀的过程中，调整刻蚀环境中的等离子气体的流率，以控制对所述电子传输层的刻蚀速率；其中，所述等离子气体的流率与所述刻蚀速率正相关。
例如，本公开至少一实施例提供的方法中，所述金属微粒呈球状，所述金属微粒的直径为50纳米～100微米。
例如，本公开至少一实施例提供的方法中，所述金属微粒的包括四氧化三铁。
例如，本公开至少一实施例提供的方法中，所述电子传输层包括氧化锌。
例如，本公开至少一实施例提供的方法中，所述第二电极为阴极，形成所述第二电极包括：采用氟化锂或铝通过蒸镀的方式在形成有所述微棱镜结构的所述电子传输层的表面上保形地形成所述第二电极。
例如，本公开至少一实施例提供的方法中，所述第二电极为阴极，在所述第二电极上形成封装层包括：采用氧化铟锡或氧化铟锌通过溅射的方式在所述第二电极的远离所述衬底基板的一侧保形地形成所述封装层。
附图说明
为了更清楚地说明本公开实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本公开的一些实施例，而非对本公开的限制。
图1A是本公开一些实施例提供的一种显示基板的结构示意图；
图1B是本公开一些实施例提供的一种显示基板的结构示意图；
图1C是本公开一些实施例提供的一种显示基板的结构示意图；
图1D是本公开一些实施例提供的一种显示基板的结构示意图；
图2是本公开一些实施例提供的另一种显示基板的结构示意图；
图3A是本公开一些实施例提供的一种电子传输层的结构示意图；
图3B是本公开一些实施例提供的另一种电子传输层的结构示意图；
图3C是本公开一些实施例提供的一种电子传输层的结构示意图；
图3D是本公开一些实施例提供的一种电子传输层的结构示意图；
图4是本公开一些实施例提供的又一种显示基板的结构示意图；
图5是本公开一些实施例提供的一种显示基板的制造方法的流程图；
图6是本公开一些实施例提供的另一种显示基板的制造方法的流程图；
图7是本公开一些实施例提供的一种形成微棱镜结构的方法流程图。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例的附图，对本公开实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本公开的一部分实施例，而不是全部的实施例。基于所描述的本公开的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本公开保护的范围。
除非另外定义，本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
显示基板的发光器件包括有机发光二极管(OLED)以及量子点发光二极管(QLED)等。OLED器件中的层级结构一般由有机材料制成，QLED 器件中的层级结构一般由无机材料制成。例如，OLED器件的封装层通常包括无机材料、有机材料或者无机材料和有机材料的组合，QLED器件的封装层通常包括无机材料，例如包括氧化铟锡或氧化铟锌等无机材料。对于顶发射型结构的发光器件而言，由于无机材料的折射率较高，发光器件在出光时，光线从封装层进入空气时易发生全反射，因此导致发光器件的出光效率较低。
例如，对于顶发射型结构的OLED器件和QLED器件，光线从器件中的封装层向外界发射，由于无机材料的折射率通常高于有机材料的折射率，例如QLED器件中的封装层的折射率通常为1.4～1.6，OLED器件中的封装层的折射率通常为1.2～1.4，因此器件在出光时，光线从封装层进入空气时容易发生全反射，导致器件的出光效率较低。在一些情况下，与OLED器件相比，QLED器件在出光时，光线从封装层进入空气时可能更容易发生全反射，导致QLED器件的出光效率较低。
本公开至少一实施例提供一种显示基板及其制造方法、显示装置，可以解决相关技术中发光器件，例如OLED器件或者QLED器件等的出光效率较低的问题。
为使本公开的目的、技术方案和优点更加清楚，下面将结合附图对本公开实施方式作进一步地详细描述。
本公开一些实施例提供了一种显示基板，如图1A所示，该显示基板可以包括衬底基板101和发光器件。发光器件包括在衬底基板101上依次叠层的第一电极103、发光材料层106和第二电极108，发光材料层106的出光侧(例如图中的上侧)设置有微棱镜结构，例如多个微棱镜结构。
例如，在一些实施例中，发光材料层106是发光功能层120中的一层，第二电极108位于发光功能层120的出光侧，发光功能层120与第二电极108之间设置有微棱镜结构。
例如，在一些示例中，如图1A所示，发光功能层120包括发光材料层106以及在发光材料层106的远离衬底基板101一侧(即图中的上侧)的电子传输层107，例如，电子传输层107包括微棱镜结构M。由此，微棱镜结构M设置在发光功能层120与第二电极108之间。例如，第二电极108与电子传输层107保形，从而第二电极108与电子传输层107之间的界面为非平坦界面。
例如，在一些示例中，如图1D所示，发光功能层108与第二电极120之间还可以具有其他功能层，并且该功能层具有微棱镜结构，例如，发光功能层108与第二电极120之间具有导电层180，导电层180上形成有微棱镜结构M。导电层180例如包括氧化锌、氧化铟锡等材料。
例如，在一些实施例中，发光功能层120包括位于发光材料层106的出光侧的多个功能层(例如下方介绍的电子传输层107和电子注入层117)，多个功能层之一的表面具有微棱镜结构。例如，发光功能层120的位于发光材料层106和位于出光侧的最外层之间的第一层具有微棱镜结构，发光功能层的位于第一层的出光侧的功能层与第一层保形。例如，发光功能层120的位于出光侧的最外层具有微棱镜结构。
例如，在一些示例中，如图1B和图1C所示，发光功能层120包括发光材料层106以及在发光材料层106的远离衬底基板101一侧依次叠层的电子传输层107和电子注入层117。例如，如图1B所示，电子传输层107包括微棱镜结构M。此时，发光功能层120的位于发光材料层106和位于出光侧的最外层之间的第一层即为电子传输层107。或者，如图1C所示，电子注入层117包括微棱镜结构M。此时，发光功能层120的位于出光侧的最外层具有微棱镜结构。例如，发光功能层120上方的第二电极108与电子传输层107或电子注入层117保形。
例如，在一些实施例中，如图1A-图1D所示，表面具有微棱镜结构的功能层与微棱镜结构为由同种材料形成的一体结构。在其他实施例中，表面具有微棱镜结构的功能层与微棱镜结构也可以为非一体结构，即为独立的两个结构。
例如，在一些实施例中，发光功能层120还包括在发光材料层106的靠近衬底基板101一侧依次叠层的空穴传输层105和空穴注入层104。
例如，在发光器件中，发光功能层中的电子传输层107、电子注入层117、空穴传输层105和空穴注入层104可以选择性设置。例如，对于QLED而言，发光材料层106包括量子点发光材料，由于量子点发光材料的电子传输能力较强，因此可以不设置电子注入层117。例如，对于OLED而言，发光材料层106包括有机发光材料，此时，上述功能层(包括空穴注入层104、空穴传输层105、电子传输层107和电子注入层117)可以均设置，以提高发光器件的发光效率。当然，在一些实施例中，根据所采用的有机发光材料等实 际情况，也可以只设置其中的几个。
例如，如图1A-图1C所示，显示基板还包括设置在衬底基板101上的驱动电路层102以及封装层109。例如，驱动电路层102包括多个薄膜晶体管TFT以及电容，封装层109覆盖在发光器件上，以对发光器件进行封装。
例如，以图1A为例，电子传输层107的远离衬底基板101的表面上形成有多个微棱镜结构M，第二电极108和封装层109保形地设置在电子传输层107远离衬底基板101的表面上，从而第二电极108和封装层109为非平坦结构。该实施例中，第二电极108和封装层109保形地设置在电子传输层107远离衬底基板的表面上，也即是，电子传输层107与第二电极108之间非平面接触，第二电极108与封装层109之间非平面接触。
例如，在一些示例中，第一电极103作为发光器件的阳极，第二电极108作为发光器件的阴极，本公开的实施例对此不做限定。例如，阳极、空穴注入层、空穴传输层、发光材料层、电子传输层和阴极(在一些示例中还包括电子注入层)组成的结构也可称为自发光器件。
在本公开的实施例中，上述自发光器件可以为QLED器件，也可以为OLED器件，所提供的显示基板可以为顶发射型结构，也可以为底发射型结构，本公开的实施例对此不做具体限定。例如，当显示基板为底发射型结构时，QLED器件的出光侧为QLED器件的靠近衬底基板的一侧，例如发光材料层的靠近衬底基板的一侧设置有微棱镜结构，此时发光功能层的靠近衬底基板的一侧的表面包括微棱镜结构。例如，当自发光器件为QLED器件时，发光材料层可以包括量子点材料，该量子点材料能够发出红、绿、蓝三种颜色的光，以形成自发光器件中的红色像素、绿色像素和蓝色像素。
需要说明的是，光线发生全反射的条件包括：当光线的入射角大于全反射的临界角θ(sinθ＝出射介质的折射率/入射介质的折射率)时，光线会在入射介质与出射介质的临界面上发生全反射。
例如，在一些示例中，电子传输层107包括氧化锌，第二电极108作为阴极，包括氟化锂或铝。例如，由氟化锂或铝制备得到的膜层的厚度小于10纳米，以保证膜层的透光性。例如，在由氟化锂或铝制备得到的膜层上还可以形成导电层，该导电层可以起到封装层的作用，可以作为封装层。例如，该导电层包括氧化铟锡或氧化铟锌，该导电层的厚度可以为50～100纳米。其中，氧化锌的折射率大于2，氧化铟锡或氧化铟锌的折射率为1.4～2，氟化 锂和铝的折射率为0.6～1.6。例如，铝对波长为450纳米的光的折射率为0.63，对波长为550纳米的光的折射率为1.01，对波长为650纳米的光的折射率为1.56。
综上所述，本公开一些实施例提供的显示基板，一方面，由于发光材料层的出光侧设置有微棱镜结构，例如电子传输层或电子注入层的远离衬底基板的表面上具有微棱镜结构，从而第二电极与电子传输层或电子注入层之间的界面可以为非平坦界面，当光线从电子传输层或电子注入层发射到第二电极(例如阴极)和封装层中时，出射面上不同位置的曲率不同，光线的入射角度不易满足发生全反射的条件，减少了发生全反射的光线，另一方面，由于封装层为非平坦结构，当光线从显示基板的内部通过封装层发射到外界环境中时，出射面上不同位置的曲率不同，光线的入射角度不易满足发生全反射的条件，减少了发生全反射的光线，因此提高了显示基板的出光效率。
例如，在一些实施例中，也可以是空穴传输层105或空穴注入层104包括微棱镜结构，或者发光功能层102中还可以包括其他功能层，并利用该功能层形成微棱镜结构，只要使发光功能层102的远离衬底基板101的表面形成为不平坦结构即可，本公开的实施例对微棱镜结构的具体设置位置不做限定。
本公开的实施例对显示基板中的其他功能结构的具体形式不做限定。例如，驱动电路层102中的薄膜晶体管TFT可以包括依次形成在衬底基板上的栅极金属图案、栅绝缘层、有源层、源漏极金属图案和钝化层。例如，在一个示例中，栅极金属图案可以由金属钼(Mo)制备得到，其厚度可以为200纳米；栅绝缘层可以由二氧化硅(SiO 2)制备得到，其厚度可以为150纳米，有源层可以由铟镓锌氧化物(Indium Gallium Zinc Oxide，IGZO)制备得到，其厚度可以为40纳米，源漏极金属图案可以由金属钼制备得到，其厚度可以为200纳米；钝化层可以由二氧化硅制备得到，其厚度可以为300纳米。
例如，如图2所示，显示基板还可以包括像素界定层110。像素界定层110包括多个开口，以限定显示基板的多个像素单元。例如，在显示基板的制造工艺中，第一电极103(例如为阳极，也可称为像素电极)和像素界定层110可以在形成有驱动电路层102的衬底基板101上依次形成，再在有像素界定层110的多个开口中依次形成空穴注入层、空穴传输层、发光材料层、电子传输层(和电子注入层)等，之后形成阴极和封装层(图中未标出)等 结构。例如，在一个示例中，第一电极103作为阳极，可以由氧化铟锡(Indium Tin Oxide，ITO)制备得到，其厚度可以为40纳米；像素界定层110可以由亚克力材料制备得到，其厚度可以为0.7微米，像素界定层110的坡度角(即像素界定层的斜面与底面的夹角)w可以为60度。
例如，在一些实施例中，以图3A为示例，微棱镜结构包括底面M1和与底面M1相接的至少一个侧表面M2，至少一个侧表面M2的至少与底面M1相接的一部分与底面的夹角α在45°-90°之间，可以等于端值。
例如，所述侧表面可以是弧面或者弯曲面而非平直的平面，弧面或弯曲面与底面的夹角指的是该面上点的切平面与底面的夹角。
例如，如图3A所示，在垂直于衬底基板的方向上，电子传输层107上的微棱镜结构M的截面可以呈矩形；或者，如图3B所示，电子传输层107上的微棱镜结构M的截面可以呈三角形；或者，如图3C所示，电子传输层107上的微棱镜结构M的截面可以呈梯形；或者，如图3D所示，电子传输层107上的微棱镜结构M的截面可以呈弧形，本公开的实施例对微棱镜结构的具体形状不做限定。
例如，如图4所示，显示基板中还可以包括设置在封装层109的远离衬底基板101一侧的圆偏振片111，圆偏振片111可以避免用户在强光条件下从显示基板的显示面所在侧看到显示基板内部的结构，影响显示装置的外观。
综上所述，本发明实施例提供的显示基板，一方面，由于发光材料层的出光侧设置有微棱镜结构，例如电子传输层或电子注入层的远离衬底基板的表面上具有微棱镜结构，从而第二电极与电子传输层或电子注入层之间的界面可以为非平坦界面，当光线从电子传输层或电子注入层发射到第二电极和封装层中时，出射面上不同位置的曲率不同，光线的入射角度不易满足发生全反射的条件，减少了发生全反射的光线，另一方面，由于封装层为非平坦结构，当光线从显示基板的内部通过封装层发射到外界环境中时，出射面上不同位置的曲率不同，光线的入射角度不易满足发生全反射的条件，减少了发生全反射的光线，因此提高了显示基板的出光效率。
本公开的实施例提供了一种显示装置，该显示装置包括上述任一实施例提供的显示基板。该显示装置具有较高的出光效率。
例如，显示装置可以为液晶面板、电子纸、手机、平板电脑、电视机、 显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
综上所述，本发明实施例提供的显示装置，一方面，由于发光材料层的出光侧设置有微棱镜结构，例如电子传输层或电子注入层的远离衬底基板的表面上具有微棱镜结构，从而第二电极与电子传输层或电子注入层之间的界面可以为非平坦界面，当光线从电子传输层或电子注入层发射到第二电极(例如阴极)和封装层中时，出射面上不同位置的曲率不同，光线的入射角度不易满足发生全反射的条件，减少了发生全反射的光线，另一方面，由于显示基板中的封装层为非平坦结构，当光线从显示基板的内部通过封装层发射到外界环境中时，出射面上不同位置的曲率不同，光线的入射角度不易满足发生全反射的条件，减少了发生全反射的光线，因此提高了显示基板的出光效率。
本公开的实施例还提供一种显示基板的制造方法。该制造方法包括：提供衬底基板；以及在衬底基板上形成发光器件，包括在衬底基板上依次形成第一电极、发光材料层和第二电极，并且，在发光材料层的出光侧形成微棱镜结构。
例如，在一些实施例中，发光材料层是发光功能层中的一层，第二电极形成于发光功能层的出光侧，并且在发光功能层与第二电极之间形成微棱镜结构。
例如，在一些实施例中，发光功能层还包括位于发光材料层的出光侧的多个功能层，多个功能层之一的表面形成为微棱镜结构。
例如，在一些实施例中，参照图1A，在发光材料层的出光侧形成微棱镜结构包括：在发光材料层的远离衬底基板一侧形成电子传输层，并利用电子传输层形成微棱镜结构，例如，在电子传输层的远离衬底基板的表面形成微棱镜结构。
例如，在一些实施例中，参照图1B和图1C，形成发光功能层包括形成发光材料层以及在发光材料层的远离衬底基板一侧依次形成电子传输层和电子注入层，例如，参见图1B，可以在电子传输层层形成后，在电子传输层的远离衬底基板的表面形成微棱镜结构，或者，参见图1C，可以在电子注入层形成后，在电子注入层的远离衬底基板的表面形成微棱镜结构。
下面，以图1A示出的情况为例，对本公开实施例提供的显示基板的制造方法进行详细介绍。
例如，图5是本公开一些实施例提供的一种显示基板的制造方法的流程图，如图5所示，该方法可以包括：
步骤201、提供衬底基板。
步骤202、在衬底基板上依次形成驱动电路层、第一电极、空穴注入层、空穴传输层、发光材料层和电子传输层。
步骤203、在电子传输层的远离衬底基板的表面上形成多个微棱镜结构。
步骤204、在形成有多个微棱镜结构的电子传输层上保形地形成第二电极。
步骤205、在第二电极的远离衬底基板的一侧保形地形成封装层，使得封装层为非平坦结构。
采用上述方法形成的显示基板的结构可以参见图1A。
综上所述，本公开实施例提供的显示基板的制造方法，通过在发光材料层的出光侧形成微棱镜结构，例如在电子传输层或电子注入层的远离衬底基板的表面上形成多个微棱镜结构，并在形成有多个微棱镜结构的电子传输层或电子注入层上依次保形地形成第二电极(例如阴极)和封装层，使得封装层为非平坦结构，一方面，由于电子传输层或电子注入层的远离衬底基板的表面上具有微棱镜结构，当光线从电子传输层发射到阴极和封装层中时，出射面上不同位置的曲率不同，光线的入射角度不易满足发生全反射的条件，减少了发生全反射的光线，另一方面，由于封装层为非平坦结构，当光线从显示基板的内部通过封装层发射到外界环境中时，出射面上不同位置的曲率不同，光线的入射角度不易满足发生全反射的条件，减少了发生全反射的光线，因此提高了显示基板的出光效率。
图6是本公开实施例提供的另一种显示基板的制造方法的流程图，如图6所示，该方法可以包括：
步骤301、提供衬底基板。
例如，该衬底基板可以由玻璃、硅片、石英以及塑料等透明材料制成，并采用标准方法清洗。
步骤302、在衬底基板上形成驱动电路层。
例如，驱动电路层包括多个薄膜晶体管TFT等结构。例如，该TFT为顶栅型TFT，也可以为底栅型TFT，本公开的实施例对此不做限定。例如，在衬底基板上形成底栅型TFT的过程可以包括：
S11、在衬底基板上通过沉积的方式形成厚度为200纳米的金属钼层，再通过构图工艺形成栅极金属图案；
S12、在形成有栅极金属图案的衬底基板上通过沉积的方式形成厚度为150纳米的二氧化硅膜层，再通过构图工艺形成栅绝缘层；
S13、在形成有栅绝缘层的衬底基板上通过沉积的方式形成厚度为40纳米的铟镓锌氧化物层，再通过构图工艺形成有源层；
S14、在形成有有源层的衬底基板上通过沉积的方式形成厚度为200纳米的金属钼层，再通过构图工艺形成源漏极金属图案；
S15、在形成有源漏极金属图案的衬底基板上通过沉积的方式形成厚度为300纳米的二氧化硅层，再通过构图工艺形成钝化层。
其中，一次构图工艺可以包括：光刻胶涂覆、曝光、显影、刻蚀和光刻胶剥离等工序。
需要说明的是，上述实施例仅为示例性说明，在一些实施例中，栅极金属图案和源漏极金属图案还可以由铝等材质制成，栅绝缘层和钝化层还可以由二氧化氮等材质制成，本公开实施例对TFT中各层级结构的材质以及厚度均不做限定。
步骤303、在形成有驱动电路层的衬底基板上依次第一电极、像素界定层、空穴注入层、空穴传输层、发光材料层和电子传输层。
例如，第一电极为发光器件的阳极，可以在形成有驱动电路层的衬底基板通过沉积ITO的方式形成金属层，并通过构图工艺而形成；然后，在形成有第一电极的衬底基板上通过旋涂或沉积亚克力材料的方式形成亚克力层，并通过光刻、固化等工艺形成像素界定层。构图形成的像素界定层包括多个开口，以限定显示基板的多个像素单元。例如，像素界定层的坡度角可以为60度，像素界定层的厚度可以为0.7微米。
例如，在采用等离子体技术处理像素界定层远离衬底基板的表面后，采用喷墨打印等工艺分别在像素界定层的多个开口中形成空穴注入层和空穴传输层。例如，空穴注入层可以由热塑聚合物PEDOT:PSS(3，4-乙烯二氧噻吩/聚苯乙烯磺酸盐)制备得到，空穴传输层可以由1，2，4，5-四(三氟甲基)苯(1,2,4,5-Tetrakis(trifluoromethyl)Benzene，TFB)制备得到，空穴注入层和空穴传输层的总厚度可以为50～100纳米；再依次通过例如喷墨打印的方式形成发光材料层(例如量子点发光材料层或者有机发光材料层)， 然后通过喷墨打印或溅射等方式形成电子传输层，电子传输层的厚度可以为30～200纳米。
例如，电子传输层可以由氧化锌制备得到。例如，在其他实施例中，电子传输层上还可以形成电子注入层，电子注入层可以由氧化铯(Cs 2O)、碳酸铯(Cs 2CO 3)等制备得到。
步骤304、在电子传输层的远离衬底基板的表面上形成微棱镜结构。
例如，在电子传输层的远离衬底基板的表面上形成多个微棱镜结构。例如，在一个示例中，形成多个微棱镜结构的方法流程图可以如图7所示，该方法包括：
步骤3041、采用包含金属微粒的墨水在电子传输层的远离衬底基板的表面上形成掩膜层。
例如，通过打印或旋涂的方式在电子传输层上形成掩膜层。示例的，金属微粒的材质可以为四氧化三铁(Fe 3O 4)，金属微粒可以呈球状，金属微粒的直径可以为50纳米～100微米，本公开实施例对金属微粒的形状、材质和尺寸均不做限定。
步骤3042、通过掩模层对电子传输层进行刻蚀，以在电子传输层远离衬底基板的表面形成微棱镜结构。
例如，从掩膜层远离衬底基板的一侧，采用感应耦合等离子体工艺或高密度等离子体工艺对电子传输层进行刻蚀，以在电子传输层的远离衬底基板的表面形成多个微棱镜结构。
例如，在对电子传输层进行刻蚀的过程中，可以调整刻蚀环境中的等离子气体的流率，以控制对电子传输层的刻蚀速率；其中，等离子气体的流率与刻蚀速率正相关。
例如，当采用感应耦合等离子体工艺对电子传输层进行刻蚀时，刻蚀得到的微棱镜结构可以呈柱状，例如可以参见图3A；当采用高密度等离子体工艺对电子传输层进行刻蚀时，当等离子气体的流率为0时，刻蚀得到的微棱镜结构可以呈三角锥状，例如可以参见图3B，当等离子气体的流率为50标准毫升/分钟(Standard Milliliter per Minute，sccm)，由于刻蚀速率较快，刻蚀得到的微棱镜结构可以呈柱状。
例如，在一些示例中，可以调整等离子气体的流率为0、5sccm或50sccm，本公开实施例对此不做限定。例如，等离子气体可以为氧气、氮气或氩气等。
步骤3043、去除掩膜层。
例如，在一些示例中，可以采用强力磁铁(例如永磁体)或电磁铁吸附金属微粒，以去除掩膜层。例如，可以采用磁感应强度大于1特斯拉的磁铁，在空气或非极性溶剂(例如氧化锌的正交溶剂，即无法溶解氧化锌的溶剂)中，距离掩膜层1微米以上的位置处吸附金属微粒，以去除掩膜层。并且，在距离掩膜层1微米以上的位置吸附金属微粒，可以避免对显示基板的结构造成损伤。
例如，在一些示例中，也可以通过构图工艺在电子传输层远离衬底基板的一面上形成多个微棱镜结构，本公开实施例对此不做限定。
步骤305、在形成有微棱镜结构的电子传输层上保形地形成第二电极。
例如，第二电极为阴极，可以采用氟化锂或铝通过蒸镀的方式在形成有多个微棱镜结构的电子传输层上保形地形成，由氟化锂或铝制备得到的膜层的厚度小于10纳米，以保证膜层的透光性。
步骤306、在第二电极的远离衬底基板的一侧保形地形成封装层，使得封装层为非平坦结构。
例如，可以采用氧化铟锡或氧化铟锌通过溅射的方式在第二电极的远离衬底基板的一侧保形地形成封装层。
步骤307、在封装层的远离衬底基板的一侧形成圆偏振片。
例如，可以在封装层的远离衬底基板的一侧贴附圆偏振片，以避免在强光条件下从显示基板的显示面所在侧看到显示基板内部的结构，影响显示装置的外观。
需要说明的是，本公开实施例提供的显示基板的制造方法中各步骤的先后顺序可以进行适当调整，各步骤也可以根据情况进行相应增减，任何熟悉本技术领域的技术人员在本公开揭露的技术范围内，可轻易想到变化的方法，都应涵盖在本公开的保护范围之内，因此不再赘述。
综上所述，本公开实施例提供的显示基板的制造方法，通过在发光材料层的出光侧形成微棱镜结构，例如在电子传输层或电子注入层的远离衬底基板的表面上形成多个微棱镜结构，并在形成有多个微棱镜结构的电子传输层或者电子注入层上依次保形地形成阴极和封装层，使得封装层为非平坦结构。一方面，由于电子传输层或电子注入层远离衬底基板的表面上具有微棱镜结构，当光线从电子传输层或电子注入层发射到第二电极(例如阴极)和 封装层中时，出射面上不同位置的曲率不同，光线的入射角度不易满足发生全反射的条件，减少了发生全反射的光线，另一方面，由于封装层为非平坦结构，当光线从显示基板的内部通过封装层发射到外界环境中时，出射面上不同位置的曲率不同，光线的入射角度不易满足发生全反射的条件，减少了发生全反射的光线，因此提高了显示基板的出光效率。
需要注意的是，在本公开的实施例中，“保形”是指具有共同的形貌，或者保持同一形状，例如，将第二层设置在第一层上时，第二层与第一层具有相同或相似的表面形貌。
还有以下几点需要说明：
(1)本公开实施例的附图只涉及到与本公开实施例涉及到的结构，其他结构可参考通常设计。
(2)为了清晰起见，在用于描述本公开的实施例的附图中，层或区域的厚度被放大或缩小，即这些附图并非按照实际的比例绘制。可以理解，当诸如层、膜、区域或基板之类的元件被称作位于另一元件“上”或“下”时，该元件可以“直接”位于另一元件“上”或“下”或者可以存在中间元件。
(3)在不冲突的情况下，本公开的实施例及实施例中的特征可以相互组合以得到新的实施例。
以上，仅为本公开的具体实施方式，但本公开的保护范围并不局限于此，本公开的保护范围应以权利要求的保护范围为准。

Claims (23)

  1. 一种显示基板，包括：
    衬底基板；
    发光器件，包括在所述衬底基板上依次叠层的第一电极、发光材料层和第二电极，所述发光材料层的出光侧设置有微棱镜结构。
  2. 根据权利要求1所述的显示基板，其中，所述发光材料层是发光功能层中的一层，所述第二电极位于所述发光功能层的出光侧，所述发光功能层与所述第二电极之间设置有所述微棱镜结构。
  3. 根据权利要求2所述的显示基板，其中，所述发光功能层还包括电子传输层，所述电子传输层位于所述发光材料层的出光侧，所述电子传输层具有所述微棱镜结构。
  4. 根据权利要求3所述的显示基板，其中，所述第二电极与所述电子传输层保形。
  5. 根据权利要求3所述的显示基板，还包括：
    驱动电路层，位于所述衬底基板与所述发光器件之间，以及
    封装层，在所述第二电极的远离所述衬底基板的一侧；
    其中，所述第二电极和所述封装层与所述电子传输层保形。
  6. 根据权利要求1所述的显示基板，其中，所述发光材料层是发光功能层中的一层，所述发光功能层还包括位于所述发光材料层的出光侧的多个功能层，所述多个功能层之一的表面具有所述微棱镜结构。
  7. 根据权利要求6所述的显示基板，其中，所述发光功能层的位于所述出光侧的最外层具有微棱镜结构。
  8. 根据权利要求6所述的显示基板，其中，所述发光功能层的位于所述发光材料层和位于所述出光侧的最外层之间的第一层具有微棱镜结构，所述发光功能层的位于所述第一层的出光侧的功能层与所述第一层保形。
  9. 根据权利要求6所述的显示基板，其中，所述多个功能层包括电子传输层和电子注入层。
  10. 根据权利要求6-9任一所述的显示基板，其中，表面具有所述微棱镜结构的功能层与所述微棱镜结构为由同种材料形成的一体结构。
  11. 根据权利要求1所述的显示基板，其中，所述微棱镜结构包括底面 和与所述底面相接的至少一个侧表面，其中，至少一个所述侧表面的至少与所述底面相接的一部分与所述底面的夹角大于等于45°且小于等于90°。
  12. 根据权利要求1所述的显示基板，其中，在垂直于所述显示基板的表面的方向上，所述微棱镜结构的截面呈三角形、矩形、梯形或者弧形。
  13. 一种显示基板的制造方法，包括：
    提供衬底基板；以及
    在所述衬底基板上形成发光器件，包括在所述衬底基板上依次形成第一电极、发光材料层和第二电极；
    其中，在所述发光材料层的出光侧形成微棱镜结构。
  14. 根据权利要求13所述的方法，其中，在所述发光材料层的出光侧形成微棱镜结构包括：
    在所述发光材料层的出光侧形成电子传输层，并利用所述电子传输层形成所述微棱镜结构。
  15. 根据权利要求14所述的方法，还包括：
    在所述衬底基板上形成驱动电路层，其中，所述发光器件形成在所述驱动电路层的远离所述衬底基板的一侧；以及
    在所述第二电极的远离所述衬底基板的一侧形成封装层，其中，所述第二电极和所述封装层形成为与所述电子传输层保形。
  16. 根据权利要求14所述的方法，其中，利用所述电子传输层形成所述微棱镜结构，包括：
    采用包含金属微粒的墨水，在所述电子传输层远离所述衬底基板的表面上形成掩模层；
    通过所述掩模层对所述电子传输层进行刻蚀，以在所述电子传输层远离所述衬底基板的表面形成所述微棱镜结构；
    去除所述掩膜层。
  17. 根据权利要求16所述的方法，其中，
    形成所述掩模层包括：采用所述墨水通过打印或旋涂的方式形成所述掩模层，
    通过所述掩模层对所述电子传输层进行刻蚀包括：采用感应耦合等离子体工艺或高密度等离子体工艺对所述电子传输层进行刻蚀，
    去除所述掩膜层包括：采用磁铁或电磁铁吸附所述金属微粒，以去除所 述掩膜层。
  18. 根据权利要求16所述的方法，其中，在对所述电子传输层进行刻蚀的过程中，调整刻蚀环境中的等离子气体的流率，以控制对所述电子传输层的刻蚀速率；
    其中，所述等离子气体的流率与所述刻蚀速率正相关。
  19. 根据权利要求16-18任一所述的方法，其中，所述金属微粒呈球状，
    所述金属微粒的直径为50纳米～100微米。
  20. 根据权利要求16所述的方法，其中，所述金属微粒的包括四氧化三铁。
  21. 根据权利要求14所述的方法，其中，所述电子传输层包括氧化锌。
  22. 根据权利要求14所述的方法，其中，所述第二电极为阴极，
    形成所述第二电极包括：
    采用氟化锂或铝通过蒸镀的方式在形成有所述微棱镜结构的所述电子传输层的表面上保形地形成所述第二电极。
  23. 根据权利要求22所述的方法，其中，所述第二电极为阴极，
    在所述第二电极上形成封装层包括：
    采用氧化铟锡或氧化铟锌通过溅射的方式在所述第二电极的远离所述衬底基板的一侧保形地形成所述封装层。
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