WO2019161654A1 - 一种电极组件和蚀刻设备 - Google Patents

一种电极组件和蚀刻设备 Download PDF

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Publication number
WO2019161654A1
WO2019161654A1 PCT/CN2018/104459 CN2018104459W WO2019161654A1 WO 2019161654 A1 WO2019161654 A1 WO 2019161654A1 CN 2018104459 W CN2018104459 W CN 2018104459W WO 2019161654 A1 WO2019161654 A1 WO 2019161654A1
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WIPO (PCT)
Prior art keywords
substrate
electrode plate
air inlet
processed
cavity
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PCT/CN2018/104459
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English (en)
French (fr)
Inventor
何怀亮
Original Assignee
惠科股份有限公司
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Application filed by 惠科股份有限公司 filed Critical 惠科股份有限公司
Priority to US16/312,264 priority Critical patent/US20200083025A1/en
Publication of WO2019161654A1 publication Critical patent/WO2019161654A1/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes

Definitions

  • the present application relates to the field of etching technology, and more particularly to an electrode assembly and an etching apparatus.
  • An important step in the manufacturing process of a liquid crystal display panel is an etching process in which a dry etching process is currently the most commonly used etching method, which is etched using an etching gas.
  • the process gas is blown to the substrate to be processed by the blowing force of the intake system, the suction force of the suction system, and the voltage between the electrode plates.
  • process uniformity is usually used to describe the overall etching degree of the workpiece under a certain process; the closer the etching degree of the different positions on the same workpiece processing surface, the higher the process uniformity.
  • the etching gas will flow to the corners inside the cavity in actual operation, and the etching degree of the four corners and other positions may be different.
  • the etching degree of each part of the substrate to be processed is different, resulting in poor processing uniformity of each part of the substrate to be processed, resulting in product scrapping.
  • An object of the embodiments of the present invention is to provide an electrode assembly to solve the technical problem that the processing uniformity of each part of the substrate to be processed exists in the prior art.
  • an electrode assembly including:
  • a first electrode plate including a first central region and a first edge region surrounding the first central region
  • a first air inlet hole is connected to the air intake device, and is opened in the first central region;
  • a second air inlet hole is connected to the air intake device, penetrates through the first edge region, and is disposed around a periphery of the plurality of the first air inlet holes, the first air inlet hole
  • the cross sectional area is smaller than the cross sectional area of the second intake hole.
  • a plurality of the first intake holes are opened in the first central region in a uniform or partially uniform manner.
  • a plurality of the first intake holes are opened in the first central region in a non-uniform manner.
  • a plurality of the second intake holes are opened in the first edge region in a uniform or partially uniform manner.
  • a plurality of the second intake holes are opened in the first edge region in a non-uniform manner.
  • the plurality of first intake holes are the same shape, partially the same or different in size.
  • the plurality of the second intake holes are the same shape, partially the same or different in size.
  • a cross-sectional area of a first air inlet hole opened in a first central area is smaller than a cross-sectional area of a second air inlet hole opened in a first edge area, Therefore, when the etching gas enters the etching device through the first gas inlet hole and the second gas inlet hole, the flow rate of the etching gas passing through the second gas inlet hole is smaller than the flow rate of the etching gas passing through the first gas inlet hole, thereby further reducing the waiting time
  • An etching rate of a portion of the substrate corresponding to the first edge region is such that an etching rate of a portion of the substrate to be processed corresponding to the first central region is closer to an etching rate of a portion of the substrate to be processed corresponding to the first edge region, thereby Effectively improve the processing uniformity of each part of the substrate to be processed.
  • the purpose of the embodiment of the present application is to provide an etching apparatus, including:
  • a first electrode plate disposed above the cavity, including a first central region and surrounding the first middle a first edge region of the heart region;
  • a second electrode plate disposed under the cavity and opposite to the first electrode plate, including a placement area and a second edge area surrounding the placement area, the substrate to be processed is disposed in the Placement area
  • a first air inlet hole is connected to the air intake device, penetrates through the first central region, and the plurality of the first air inlet holes face the substrate to be processed;
  • a second air inlet hole is connected to the air intake device, penetrates through the first edge region, and surrounds a periphery of the plurality of the first air inlet holes, the first air inlet hole
  • the cross sectional area is smaller than the cross sectional area of the second intake hole
  • the air outlet is connected to the air suction device, disposed below the cavity, and the position of the air outlet is lower than the position of the second electrode plate.
  • a plurality of the first intake holes are opened in the first central region in a uniform or partially uniform manner.
  • a plurality of the first intake holes are opened in the first central region in a non-uniform manner.
  • a plurality of the second intake holes are opened in the first edge region in a uniform or partially uniform manner.
  • a plurality of the second intake holes are opened in the first edge region in a non-uniform manner.
  • the plurality of first intake holes are the same shape, partially the same, or different in size.
  • the plurality of the second intake holes are the same shape, partially the same or different in size.
  • the etching apparatus further includes:
  • the plasma is disposed between the first electrode plate and the substrate to be processed, and corresponds to a position of the substrate to be processed.
  • the etching apparatus further includes:
  • a blocking ring disposed in the second edge region and surrounding the periphery of the placement region
  • the separator is disposed around the outer side of the second electrode plate and adjacent to a periphery of the barrier ring, and the partition plate is provided with a partition opening therethrough.
  • the air outlet is opened at a bottom of the cavity, and the air outlet is separated from the air outlet The position of the plate opening corresponds.
  • the air outlet is opened at a side of the cavity, and the air outlet is adjacent to the partition opening.
  • the substrate to be processed includes a glass substrate and a film covering the surface of the glass substrate, the film being provided with a hollowed-out region corresponding to the pattern to be etched.
  • the cross-sectional area of the first air inlet opening opened in the first central area is smaller than the cross-sectional area of the second air inlet opening in the first edge area. Therefore, when the etching gas enters the cavity through the first inlet hole and the second inlet hole, the flow rate of the etching gas passing through the second inlet hole is smaller than the flow rate of the etching gas passing through the first inlet hole, thereby further reducing the substrate.
  • the etching rate of the edge region is such that the etching rate of the edge region of the substrate and the central region of the substrate are closer, thereby effectively improving the processing uniformity of each portion of the substrate to be processed.
  • An object of the embodiment of the present application is to provide an etching apparatus, including:
  • a first electrode plate disposed above the cavity, including a first central region and a first edge region surrounding the first central region;
  • a second electrode plate disposed under the cavity and opposite to the first electrode plate, including a placement area and a second edge area surrounding the placement area, the substrate to be processed is disposed in the Placement area
  • a first air inlet hole is connected to the air intake device, penetrates through the first central region, and the plurality of the first air inlet holes face the substrate to be processed;
  • a second air inlet hole is connected to the air intake device, penetrates through the first edge region, and is disposed around a periphery of the plurality of the first air inlet holes, the first air inlet hole
  • the cross sectional area is smaller than the cross sectional area of the second intake hole
  • a blocking ring disposed in the second edge region and surrounding the periphery of the placement region
  • a separator disposed around the outer side of the second electrode plate and adjacent to a periphery of the barrier ring, wherein the partition plate is provided with a partition opening;
  • an air outlet connected to the air suction device, disposed below the cavity and the position of the air outlet is lower than The position of the second electrode plate.
  • the cross-sectional area of the first air inlet opening opened in the first central area is smaller than the cross-sectional area of the second air inlet opening in the first edge area. Therefore, when the etching gas enters the cavity through the first inlet hole and the second inlet hole, the flow rate of the etching gas passing through the second inlet hole is smaller than the flow rate of the etching gas passing through the first inlet hole, thereby further reducing the substrate.
  • the etching rate of the edge region is such that the etching rate of the edge region of the substrate and the central region of the substrate are closer, thereby effectively improving the processing uniformity of each portion of the substrate to be processed.
  • the plasma is provided so that the etching gas can be better etched to the processed substrate, and the etching effect can be effectively improved.
  • the barrier ring can stabilize and fix the substrate to be processed; the partition plate can prevent the slag after the substrate to be processed from falling directly into the air outlet to enter the air suction device, causing damage to the air suction device, and the other
  • the aspect also has a certain blocking effect on the etching gas, thereby controlling the flow rate and the flow direction of the etching gas, so that the etching gas can enter the air outlet through the opening of the partition opened in the partition.
  • FIG. 1 is a first schematic structural view of a first electrode plate of an etching apparatus according to an embodiment of the present application
  • FIG. 2 is a second schematic structural view of a first electrode plate of an etching apparatus according to an embodiment of the present application
  • FIG. 3 is a schematic structural view of an example electrode plate
  • FIG. 4 is a schematic cross-sectional structural view of an etching apparatus according to an embodiment of the present application.
  • FIG. 5 is a second schematic cross-sectional view of an etching apparatus according to an embodiment of the present application.
  • FIG. 6 is a schematic cross-sectional structural view 3 of an etching apparatus according to an embodiment of the present application.
  • FIG. 7 is a schematic plan view showing the structure of an etching apparatus according to an embodiment of the present application.
  • an electrode assembly is applied to an etching apparatus, including a first electrode plate 1, the first electrode plate 1 including a first central region 11 and a first edge region 12 surrounding the first central region 11;
  • the first central region 11 is provided with a first air inlet hole 111 connected to the air inlet device, and the first air inlet hole 121 is connected to the air inlet device.
  • a cross-sectional area of the first intake hole 111 is smaller than a cross-sectional area of the second intake hole 121.
  • the cross-sectional area of the first air inlet hole 111 opened in the first central region 11 is smaller than the second air inlet hole 121 opened in the first edge region 12
  • the cross-sectional area therefore, when the etching gas enters the etching apparatus through the first intake hole 111 and the second intake hole 121, the flow rate of the etching gas passing through the second intake hole 121 is smaller than the etching through the first intake hole 111
  • the flow rate of the gas in turn, can reduce the etching rate of the portion of the substrate to be processed corresponding to the first edge region 12, such that the etching rate of the portion of the substrate to be processed corresponding to the first central region 11 and the substrate to be processed and the first edge region
  • the etching rates of the corresponding portions of 12 are closer, thereby effectively improving the processing uniformity of the respective portions of the substrate to be processed.
  • the cross-sectional area of the intake hole 110 located in the central region of the first electrode plate 1 is the smallest, and the cross-sectional area of the intake hole 110 located at the edge region of the first electrode plate 1 is the largest, located in
  • the cross-sectional areas of all the air intake holes 110 on the first electrode plate 1 may be arranged in an arithmetic progression such that the cross-sectional area of all the air intake holes 110 on the first electrode plate 1 is from the central area of the first electrode plate 1. To the edge region of the first electrode plate 1 Increase.
  • the cross-sectional area of the air inlet hole 110 located on the first electrode plate 1 may be otherwise arranged to ensure the cross-sectional area of the air inlet hole 110 from the central area of the first electrode plate 1. It is sufficient to increase the edge area of the first electrode plate 1.
  • the variation of the cross-sectional area of the air inlet hole 110 from the center of the first electrode plate 1 and the edge region of the first electrode plate 1 may be linear, stepwise, or any other variation, and is not limited herein. It is sufficient to ensure that the cross-sectional area of the intake hole 110 is increased from the central region of the first electrode plate 1 toward the edge region of the first electrode plate 1.
  • the plurality of first air inlet holes 111 are evenly distributed in the first central region 11 such that the flow rate of the etching gas of the first central region 11 is the same, thereby causing the substrate to be processed.
  • the etching rate of the portion corresponding to the first central region 11 is the same, thereby effectively improving the processing uniformity of the portion of the substrate to be processed corresponding to the first central region 11;
  • the plurality of second air inlet holes 121 are evenly distributed
  • An edge region 12 is formed such that the flow rate of the etching gas of the first edge region 12 is the same, so that the etching rate of the portion corresponding to the first edge region 12 on the substrate to be processed is the same, thereby effectively improving the substrate to be processed and the first The processing uniformity of the corresponding portion of the edge region 12.
  • the plurality of first air intake holes 111 are distributed in the first central region 11 in a non-uniform or locally uniform manner, and the plurality of second air intake holes 121 are distributed in an uneven or partially uniform manner.
  • the etching rate of the portion of the substrate to be processed corresponding to the first central region 11 may be made the same as the etching rate of the portion of the substrate to be processed corresponding to the first edge region 12.
  • the plurality of first intake holes 111 have the same shape and size, such that the cross-sectional areas of the plurality of first intake holes 111 are the same, such that the flow rate of the etching gas of the first central region 11 is the same. Further, the etching rate of the portion of the substrate to be processed corresponding to the first central region 11 is the same, thereby effectively improving the processing uniformity of the portion of the substrate to be processed corresponding to the first central region 11;
  • the plurality of second intake holes 121 have the same shape and size, such that the flow rate of the etching gas of the first edge region 12 is the same, thereby causing an etching rate of a portion of the substrate to be processed corresponding to the first edge region 12. The same, thereby effectively improving the processing uniformity of the portion of the substrate to be processed corresponding to the first edge region 12;
  • the cross-sectional area of the first air inlet hole 111 and the cross-sectional area of the second air inlet hole 121 are carefully designed so that the central region etching rate of the substrate to be processed (ie, the first central region on the substrate to be processed) 11 relative
  • the etching rate of the portion to be treated is the same as the etching rate of the edge region (i.e., the etching rate of the portion of the substrate to be processed corresponding to the first edge region 12), which improves the processing uniformity of the respective portions of the substrate to be processed.
  • the plurality of first air inlet holes 111 are partially the same in size and shape, and the plurality of second air inlet holes 121 are partially the same in size and shape, as long as the first central area is on the substrate to be processed.
  • the etching rate of the corresponding portion of 11 corresponds to the etching rate of the portion of the substrate to be processed corresponding to the first edge region 12.
  • the plurality of first air inlet holes 111 are different in size and shape, and the plurality of second air inlet holes 121 are different in size and shape as long as the substrate to be processed is in phase with the first central region 11.
  • the etching rate of the corresponding portion is the same as the etching rate of the portion of the substrate to be processed corresponding to the first edge region 12
  • an embodiment of the present application further provides an etching apparatus including a cavity 100 for etching a substrate 3 to be processed, a first electrode plate 1 and a second electrode plate 2.
  • the first electrode plate 1 is disposed above the cavity 100, near the top 101 of the cavity 100, and includes a first central region 11 and a first edge region 12 surrounding the first central region 11, the first central region 11 being opened
  • the second air inlet hole 121 is disposed around the first air inlet hole.
  • the cross-sectional area of the first air inlet hole 111 is smaller than the cross-sectional area of the second air inlet hole 121; the second electrode plate 2 is disposed below the cavity 100, near the bottom portion 102 of the cavity 100, and The first electrode plate 1 is oppositely disposed, and includes a placement area and a second edge area surrounding the placement area; the substrate to be processed 3 is disposed on the placement area, and the position of the first electrode plate 1 corresponds to the position of the substrate 3 to be processed; 100 is also open To 103, air outlet 103 connected to the suction outlet port is provided below the apparatus within the cavity 100 and outlet port 103 is positioned lower than the second electrode plate 2.
  • the working principle of an etching apparatus is as follows: First, the substrate to be processed 3 is disposed on the second electrode plate 2; then the air intake device is connected to the first air inlet 111 and the second air inlet The holes 121 are connected, and the air suction device is connected to the air outlet 103; the air suction device and the air intake device are activated, so that the etching gas enters the cavity 100 through the first air inlet hole 111 and the second air inlet hole 121, and is treated The substrate 3 is processed for etching; the etching gas is finally discharged to the outside of the cavity 100 through the gas outlet.
  • the substrate of the substrate 3 to be processed is processed. More marginal areas Close to the four corners of the cavity 100, the etching rate of the edge region of the substrate is higher than the etching rate of the central region of the substrate, resulting in different etching degrees of the portions of the substrate 3 to be processed, so that the processing uniformity of each part of the substrate 3 to be processed is not good.
  • the cross-sectional area of the second air inlet hole 121 is larger than the cross-sectional area of the first air inlet hole 111, so that the air pressure of the etching gas passing through the second air inlet hole 121 is required.
  • the flow rate of the etching gas in the second intake hole 121 is smaller than the flow rate of the etching gas in the first intake port Lm, thereby causing the flow to the cavity ioo
  • the etching gas at the four corners is reduced, so that the etching rate of the edge region of the substrate can be reduced, so that the etching rate of the edge region of the substrate is closer to the etching rate of the central region of the substrate, thereby improving the processing uniformity of each portion of the substrate 3 to be processed.
  • the cross-sectional area of the first air inlet 111 opened in the first central region 11 is smaller than the second air inlet 121 opened in the first edge region 12
  • the cross-sectional area therefore, when the etching gas enters the cavity 100 through the first intake hole 111 and the second intake hole 121, the flow rate of the etching gas passing through the second intake hole 121 is smaller than that passing through the first intake hole 111
  • the flow rate of the etching gas can further reduce the etching rate of the edge region of the substrate, so that the etching rate of the edge region of the substrate and the central region of the substrate are closer, thereby effectively improving the processing uniformity of each portion of the substrate to be processed.
  • the cross-sectional area of the intake hole 110 located in the central region of the first electrode plate 1 is the smallest, and the cross-sectional area of the intake hole 110 located at the edge region of the first electrode plate 1 is the largest, located in
  • the cross-sectional areas of all the air intake holes 110 on the first electrode plate 1 may be arranged in an arithmetic progression such that the cross-sectional area of all the air intake holes 110 on the first electrode plate 1 is from the central area of the first electrode plate 1. The edge area of the first electrode plate 1 is increased.
  • the cross-sectional area of the air inlet hole 110 located on the first electrode plate 1 may be otherwise arranged to ensure the cross-sectional area of the air inlet hole 110 from the central area of the first electrode plate 1. It is sufficient to increase the edge area of the first electrode plate 1.
  • the variation of the cross-sectional area of the air inlet hole 110 from the center of the first electrode plate 1 and the edge region of the first electrode plate 1 may be linear, stepwise, or any other variation, and is not limited herein. It is sufficient to ensure that the cross-sectional area of the intake hole 110 is increased from the central region of the first electrode plate 1 toward the edge region of the first electrode plate 1.
  • the plurality of first air inlet holes 111 are evenly distributed in the first center.
  • the region 11 is such that the flow rate of the etching gas is the same in each of the first gas inlet holes 111, so that the flow rates of the etching gas entering the first central region 11 are the same, thereby making the etching rate of the central region of the substrate the same, thereby effectively improving Processing uniformity of the central region of the substrate of the substrate 3 to be processed;
  • a plurality of second intake holes 121 are evenly distributed in the first edge region 12 such that the flow rate of the etching gas is the same in each of the second intake holes 121, thereby The flow rates of the etching gases entering the first edge region 12 are the same, so that the etching rates of the edge regions of the substrate are the same, thereby effectively improving the processing uniformity of the substrate edge regions of the substrate 3 to be processed.
  • the plurality of first intake holes 111 are distributed in the first central region 11 in a non-uniform or locally uniform manner, and the plurality of second intake holes 121 are distributed in an uneven or partially uniform manner.
  • the first edge region 12 as long as the etching rate of the central region of the substrate is the same as the etching rate of the edge region of the substrate
  • the plurality of first intake holes 111 have the same shape and size, such that the cross-sectional areas of the plurality of first intake holes 111 are the same, such that the flow rate of the etching gas of the first central region 11 is the same. Further, the etching rate of the central region of the substrate is the same, thereby effectively improving the processing uniformity of the central region of the substrate; the shapes and sizes of the plurality of second air inlets 121 are the same, so that the flow rate of the etching gas of the first edge region 12 is the same.
  • the etching rate of the edge region of the substrate is the same, thereby effectively improving the processing uniformity of the edge region of the substrate; and the cross-sectional area of the first air inlet hole 111 and the cross-sectional area of the second air inlet hole 121 are carefully designed to make the substrate
  • the etching rate of the central region is the same as the etching rate of the edge region of the substrate, improving the processing uniformity of the respective portions of the substrate to be processed.
  • the plurality of first air inlet holes 111 are partially the same in size and shape, and the plurality of second air inlet holes 121 are partially the same in size and shape, and the etching rate of the central portion of the substrate is opposite to the edge area of the substrate. The etching rate is the same.
  • the size and shape of the plurality of first air inlet holes 111 are different, the size and shape of the plurality of second air inlet holes 121 are different, and the etching rate of the central area of the substrate and the etching rate of the edge area of the substrate are different. The same can be.
  • the etching apparatus further includes a plasma 4, and the plasma 4 is disposed between the first electrode plate 1 and the substrate 3 to be processed, and is adjacent to the substrate 3 to be processed. The location corresponds. Alternatively, the plasma 4 is located on the side close to the substrate 3 to be processed.
  • the etching gas passes through the first air inlet hole 111 and the second inlet
  • the pores 121 enter the cavity 100 and reach the plasma 4;
  • the plasma 4 decomposes the etching gas molecules to produce highly active molecules capable of rapidly etching away the material of the substrate 3 to be processed, and the plasma 4 also ionizes these highly active molecules.
  • the material to be etched is converted from the solid phase to the gas phase, and is removed from the cavity 100 through the gas outlet 103 by the action of the air suction device.
  • the etching gas can be better etched to the processed substrate 3, and the etching effect can be effectively improved. Since the flow rate of the etching gas passing through the second intake hole 121 is smaller than the flow rate of the etching gas passing through the first intake hole 11 1 , the consumption of the respective portions of the plasma 4 is more uniform, and the portions of the substrate 3 to be processed are further processed. The etching rate is also more uniform, thereby improving the processing uniformity of the respective portions of the substrate 3 to be processed.
  • the etching apparatus further includes a barrier ring 5 and a spacer 6 disposed at a second edge region of the second electrode plate 2 and disposed around the periphery of the placement area, the spacer 6 surrounding It is disposed on the outer side of the second electrode plate 2 and adjacent to the outer periphery of the blocking ring 5, and the partition plate 6 is provided with a partition opening therethrough.
  • the barrier ring 5 disposed around the periphery of the placement area can function to stabilize and fix the substrate 3 to be processed; and surround the outer side of the second electrode plate 2
  • the separator 6 can prevent the slag after the rupture of the substrate 3 to be processed from falling directly into the air outlet 103 into the air suction device, causing damage to the air suction device, and on the other hand, shielding the etching gas. The action thus controls the flow rate and flow direction of the etching gas so that the etching gas can enter the gas outlet 103 through the opening of the partition opened in the partition 6.
  • a plurality of separator through holes are formed in the partition plate 6 corresponding to the position of the air outlet 103, so that the flow rate of the etching gas, the flow direction, and the uniformity of the distribution of the etching gas can be further adjusted, thereby The processing uniformity of each portion of the substrate 3 to be processed is further improved.
  • the substrate to be processed 3 includes a glass substrate 31 and a film 32 covering the surface of the glass substrate 31, and the film 32 is provided with a hollowed-out region corresponding to the pattern to be etched.
  • the film 32 can protect the glass substrate 31, thereby ensuring that the etching gas etches the portion of the glass substrate 31 to be etched, and the portion that does not need to be etched cannot contact the etching gas due to the covering of the film 32.
  • the air outlet 103 is opened at the bottom 102 of the cavity 100, and the air outlet 103 corresponds to the position of the partition opening. Specifically, each side of the bottom portion 102 is provided with an air outlet 103 on both sides of the position corresponding to the partition 6, that is, the number of the air outlets 103 is eight, and each corner of the four corners of the cavity 100 is nearby. There are two air outlets 103. In this way, on the one hand, the etching gas can be quickly discharged from the cavity 100 through the air outlet 103 under the action of the air suction device after passing through the opening of the partition plate, and the position of the air outlet 103 and the opening of the partition plate on the other hand.
  • the distribution of the etching gas on the substrate 3 to be processed is more uniform.
  • the etching rate of the central region of the substrate is the same as the etching rate of the edge region of the substrate, and the processing uniformity of each portion of the substrate 3 to be processed is further improved.
  • the air outlet 103 is opened at the side of the cavity 100, and the position of the air outlet 103 is lower than the position of the second electrode plate 2, so that the etching gas enters after passing through the substrate 3 to be processed.
  • the position of the 103 is matched with the position of the opening of the partition, and the position of the air outlet 103 cooperates with the first air inlet 111 and the second air inlet 121 opened in the first electrode plate 1 to help the etching gas to be processed.
  • the distribution on the substrate 3 is more uniform, so that the etching rate of the central region of the substrate is the same as the etching rate of the edge region of the substrate, further improving the processing uniformity of the respective portions of the substrate 3 to be processed. It should be understood that the number and position of the air outlets 103 can be set as desired.
  • an embodiment of the present application further provides an etching apparatus including a cavity 100 for etching a substrate 3 to be processed, a first electrode plate 1 and a second electrode plate 2 .
  • the first electrode plate 1 is disposed above the cavity 100, near the top 101 of the cavity 100, and includes a first central region 11 and a first edge region 12 surrounding the first central region 11, the first central region 11 being opened
  • the second air inlet hole 121 is disposed around the first air inlet hole.
  • the cross-sectional area of the first air inlet hole 111 is smaller than the cross-sectional area of the second air inlet hole 121; the second electrode plate 2 is disposed below the cavity 100, near the bottom portion 102 of the cavity 100, and The first electrode plate 1 is oppositely disposed, and includes a placement area and a second edge area surrounding the placement area; the substrate to be processed 3 is disposed on the placement area, and the position of the first electrode plate 1 corresponds to the position of the substrate 3 to be processed; 100 is also useful In the air outlet 103 connected to the air extracting device, the air outlet 103 is disposed below the cavity 100 and the position of the air outlet 103 is lower than the position of the second electrode plate 2.
  • the etching apparatus further includes a plasma 4, a barrier ring 5 and a separator 6, and the plasma 4 is disposed between the first electrode plate 1 and the substrate 3 to be processed, and corresponds to the position of the substrate 3 to be processed; 5 is disposed in the second of the second electrode plate 2 The edge region is disposed around the periphery of the placement region; the partition plate 6 is disposed around the outer side of the second electrode plate 2 and adjacent to the outer periphery of the barrier ring 5, and the partition plate 6 is provided with a partition opening therethrough.
  • the plasma 4 is located on the side close to the substrate 3 to be processed.
  • the etching gas enters the cavity 100 through the first inlet hole 111 and the second inlet hole 121 and reaches the plasma 4; the plasma 4 decomposes the etching gas molecules to produce a material capable of rapidly etching the substrate 3 to be processed.
  • Highly active molecules while the plasma 4 will also ionize these highly active molecules; the ionized high-activity molecules reach the substrate to be processed 3 and then convert the material to be etched from the solid phase to the gas phase, and under the action of the pumping device It is removed from the cavity 100 through the air outlet 103.
  • the cross-sectional area of the first air inlet hole 111 opened in the first central area 11 is smaller than the second air inlet hole 121 opened in the first edge area 12
  • the cross-sectional area therefore, when the etching gas enters the cavity 100 through the first intake hole 111 and the second intake hole 121, the flow rate of the etching gas passing through the second intake hole 121 is smaller than that passing through the first intake hole 111
  • the flow rate of the etching gas can further reduce the etching rate of the edge region of the substrate, so that the etching rate of the edge region of the substrate and the central region of the substrate are closer, thereby effectively improving the processing uniformity of each portion of the substrate to be processed.
  • the plasma 4 is provided so that the etching gas can be better treated to the substrate 3, and the etching effect can be effectively improved. Since the flow rate of the etching gas passing through the second intake hole 121 is smaller than the flow rate of the etching gas passing through the first intake hole 111, the consumption of the respective portions of the plasma 4 is more uniform, and the portions of the substrate 3 to be processed are etched. The rate is also more uniform, thereby improving the processing uniformity of the respective portions of the substrate 3 to be processed.
  • the barrier ring 5 can stabilize and fix the substrate 3 to be processed; the spacer 6 can be arranged to prevent the slag after the rupture of the substrate 3 to be processed from directly falling into the air outlet 103 and entering the air extracting device. It causes damage to the air suction device, and on the other hand, it can also play a certain blocking effect on the etching gas, thereby controlling the flow rate and the flow direction of the etching gas, so that the etching gas can pass through the partition plate opened on the partition plate 6. The opening enters the air outlet 103.

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Abstract

一种电极组件和蚀刻设备，蚀刻设备包括腔体(100)、第一电极板(1)和第二电极板(2)；第一电极板(1)设置在腔体(100)内，包括第一中心区域(11)和环绕第一中心区域(11)的第一边缘区域(12)，第一中心区域(11)贯通开设有第一进气孔(111)，第一边缘区域(12)贯通开设有第二进气孔(121)，第一进气孔(111)的横截面积小于第二进气孔(121)的横截面积；第二电极板(2)设置在腔体(100)内，包括放置区和围绕放置区的第二边缘区域，待加工基板(3)设于放置区上；腔体(100)上还开设有出气口(103)，出气口(103)设置在腔体(100)内且出气口(103)的位置低于第二电极板(2)的位置。

Description

一种电极组件和蚀刻设备
技术领域
[0001] 本申请涉及蚀刻技术领域， 更具体地说， 是涉及一种电极组件和蚀刻设备。
背景技术
[0002] 随着科学技术的发展， 电子设备 (例如智能手机、 笔记本电脑、 数码相机等) 越来越普及， 使得作为电子设备的重要部件的液晶显示器的需求量也大大提升 ， 从而推动了液晶显示面板行业的快速发展。
[0003] 液晶显示面板制造过程中的一个重要步骤就是蚀刻工艺， 其中干蚀刻工艺是目 前最常用的蚀刻方式， 其利用蚀刻气体进行蚀刻。 在利用干蚀刻工艺进行阵列 基板制造的过程中， 蚀刻气体 (Process Gas)在进气系统的吹力、 抽气系统的吸力 、 电极板之间的电压等因素的作用下吹向待加工基板面。 在蚀刻工艺中， 通常 使用制程均一性来描述在某一制程下工件整体的蚀刻程度； 同一工件加工面上 不同位置的蚀刻程度越接近， 则其制程均一性越高。 为了保证待加工基板面各 部分能够同时完成蚀刻加工， 保证加工良品率以及工件品质， 需要对待加工基 板面各部分的蚀刻程度进行控制， 尽量保证待加工基板面各部分以相同的速率 被蚀刻。
[0004] 然而， 5见有技术中由于腔体内部设计结构以及排气系统设计等因素， 导致在实 际操作中蚀刻气体会向腔体内部的角落流动， 四角落与其他位置蚀刻程度有落 差， 使得待加工基板各部分的蚀刻程度不同， 造成待加工基板各部分的加工均 一性不佳， 导致产品报废。
[0005] 以上不足， 有待改进。
发明概述
技术问题
[0006] 本申请实施例的目的在于提供一种电极组件， 以解决现有技术中存在的待加工 基板各部分的加工均一性不佳的技术问题。
问题的解决方案 技术解决方案
[0007] 为解决上述技术问题， 本申请实施例采用的技术方案是： 提供一种电极组件， 包括：
[0008] 第一电极板， 包括第一中心区域和环绕所述第一中心区域的第一边缘区域；
[0009] 第一进气孔， 与进气装置连接， 贯通开设在所述第一中心区域；
[0010] 第二进气孔， 与所述进气装置连接， 贯通开设在所述第一边缘区域， 且环绕设 置在多个所述第一进气孔的外围， 所述第一进气孔的横截面积小于所述第二进 气孔的横截面积。
[0011] 在一个实施例中， 多个所述第一进气孔以均匀或局部均匀的方式贯通开设在所 述第一中心区域。
[0012] 在一个实施例中， 多个所述第一进气孔以不均匀的方式贯通开设在所述第一中 心区域。
[0013] 在一个实施例中， 多个所述第二进气孔以均匀或局部均匀的方式贯通开设在所 述第一边缘区域。
[0014] 在一个实施例中， 多个所述第二进气孔以不均匀的方式贯通开设在所述第一边 缘区域。
[0015] 在一个实施例中， 多个所述第一进气孔的形状与大小相同、 局部相同或不同。
[0016] 在一个实施例中， 多个所述第二进气孔的形状与大小相同、 局部相同或不同。
[0017] 本申请实施例提供的一种电极组件中， 由于开设于第一中心区域的第一进气孔 的横截面积小于开设于第一边缘区域的第二进气孔的横截面积， 因此当蚀刻气 体通过第一进气孔和第二进气孔进入蚀刻设备中时， 通过第二进气孔的蚀刻气 体的流速小于通过第一进气孔的蚀刻气体的流速， 进而可以降低待加工基板上 与第一边缘区域对应的部分的蚀刻速率， 使得待加工基板上与第一中心区域对 应部分的蚀刻速率与待加工基板上与第一边缘区域对应的部分的蚀刻速率更接 近， 从而有效提高待加工基板的各个部分的加工均一性。
[0018] 本申请实施例的目的还在于提供一种蚀刻设备， 包括：
[0019] 腔体；
[0020] 第一电极板， 设置在所述腔体内的上方， 包括第一中心区域和环绕所述第一中 心区域的第一边缘区域；
[0021] 第二电极板， 设置在所述腔体内的下方， 并与所述第一电极板相对设立， 包括 放置区和围绕所述放置区的第二边缘区域， 待加工基板设置在所述放置区；
[0022] 第一进气孔， 与进气装置连接， 贯通开设在所述第一中心区域， 多个所述第一 进气孔正对所述待加工基板；
[0023] 第二进气孔， 与所述进气装置连接， 贯通开设在所述第一边缘区域， 且环绕设 置在多个所述第一进气孔的外围， 所述第一进气孔的横截面积小于所述第二进 气孔的横截面积；
[0024] 出气口， 与抽气装置连接， 设置在所述腔体内的下方且所述出气口的位置低于 所述第二电极板的位置。
[0025] 在一个实施例中， 多个所述第一进气孔以均匀或局部均匀的方式贯通开设在所 述第一中心区域。
[0026] 在一个实施例中， 多个所述第一进气孔以不均匀的方式贯通开设在所述第一中 心区域。
[0027] 在一个实施例中， 多个所述第二进气孔以均匀或局部均匀的方式贯通开设在所 述第一边缘区域。
[0028] 在一个实施例中， 多个所述第二进气孔以不均匀的方式贯通开设在所述第一边 缘区域。
[0029] 在一个实施例中， 多个所述第一进气孔的形状与大小相同、 局部相同或不同。
[0030] 在一个实施例中， 多个所述第二进气孔的形状与大小相同、 局部相同或不同。
[0031] 在一个实施例中， 所述蚀刻设备还包括：
[0032] 电浆， 设于所述第一电极板和所述待加工基板之间， 且与所述待加工基板的位 置相对应。
[0033] 在一个实施例中， 所述蚀刻设备还包括：
[0034] 阻挡环， 设置在所述第二边缘区域， 并环绕设置在所述放置区的外围；
[0035] 隔板， 环绕设置在所述第二电极板的外侧， 并与所述阻挡环的外围邻接， 所述 隔板上贯通设有隔板开口。
[0036] 在一个实施例中， 所述出气口开设于所述腔体的底部， 且所述出气口与所述隔 板开口的位置相对应。
[0037] 在一个实施例中， 所述出气口开设于所述腔体的侧边， 且所述出气口靠近所述 隔板开口。
[0038] 在一个实施例中， 所述待加工基板包括玻璃基板和覆盖在所述玻璃基板表面的 薄膜， 所述薄膜设有与待蚀刻的图案对应的镂空区域。
[0039] 本申请实施例提供的一种蚀刻设备中， 由于开设于第一中心区域的第一进气孔 的横截面积小于开设于第一边缘区域的第二进气孔的横截面积， 因此当蚀刻气 体通过第一进气孔和第二进气孔进入腔体中时， 通过第二进气孔的蚀刻气体的 流速小于通过第一进气孔的蚀刻气体的流速， 进而可以降低基板边缘区域蚀刻 速率， 使得基板边缘区域与基板中心区域的蚀刻速率更接近， 从而有效提高待 加工基板的各个部分的加工均一性。
[0040] 本申请实施例的目的还在于提供一种蚀刻设备， 包括：
[0041] 腔体；
[0042] 第一电极板， 设置在所述腔体内的上方， 包括第一中心区域和环绕所述第一中 心区域的第一边缘区域；
[0043] 第二电极板， 设置在所述腔体内的下方， 并与所述第一电极板相对设立， 包括 放置区和围绕所述放置区的第二边缘区域， 待加工基板设置在所述放置区；
[0044] 第一进气孔， 与进气装置连接， 贯通开设在所述第一中心区域， 多个所述第一 进气孔正对所述待加工基板；
[0045] 第二进气孔， 与所述进气装置连接， 贯通开设在所述第一边缘区域， 且环绕设 置在多个所述第一进气孔的外围， 所述第一进气孔的横截面积小于所述第二进 气孔的横截面积；
[0046] 电浆， 设于所述第一电极板和所述待加工基板之间， 且与所述待加工基板的位 置相对应；
[0047] 阻挡环， 设置在所述第二边缘区域， 并环绕设置在所述放置区的外围；
[0048] 隔板， 环绕设置在所述第二电极板的外侧， 并与所述阻挡环的外围邻接， 所述 隔板上贯通设有隔板开口；
[0049] 出气口， 与抽气装置连接， 设置在所述腔体内的下方且所述出气口的位置低于 所述第二电极板的位置。
[0050] 本申请实施例提供的一种蚀刻设备中， 由于开设于第一中心区域的第一进气孔 的横截面积小于开设于第一边缘区域的第二进气孔的横截面积， 因此当蚀刻气 体通过第一进气孔和第二进气孔进入腔体中时， 通过第二进气孔的蚀刻气体的 流速小于通过第一进气孔的蚀刻气体的流速， 进而可以降低基板边缘区域蚀刻 速率， 使得基板边缘区域与基板中心区域的蚀刻速率更接近， 从而有效提高待 加工基板的各个部分的加工均一性。
[0051] 设置电浆， 使得蚀刻气体能够更好地对待加工基板进行蚀刻， 可有效提高蚀刻 效果。 阻挡环可以对待加工基板起到稳定和固定的作用； 设置隔板， 一方面可 以防止待加工基板破裂后的碎渣直接掉进出气口中进入到抽气装置， 引起抽气 装置的损坏， 另一方面也可以对蚀刻气体起到一定的阻隔作用， 从而对蚀刻气 体的流动速率及流动方向起到控制作用， 使得蚀刻气体能够通过隔板上开设的 隔板开口进入出气口。
发明的有益效果
对附图的简要说明
附图说明
[0052] 为了更清楚地说明本申请实施例中的技术方案， 下面将对实施例或现有技术描 述中所需要使用的附图作简单地介绍， 显而易见地， 下面描述中的附图仅仅是 本申请的一些实施例， 对于本领域普通技术人员来讲， 在不付出创造性劳动性 的前提下， 还可以根据这些附图获得其他的附图。
[0053] 图 1为本申请实施例提供的蚀刻设备的第一电极板结构示意图一；
[0054] 图 2为本申请实施例提供的蚀刻设备的第一电极板结构示意图二；
[0055] 图 3为一个范例的电极板结构示意图；
[0056] 图 4为本申请实施例提供的蚀刻设备的横截面结构示意图一；
[0057] 图 5为本申请实施例提供的蚀刻设备的横截面结构示意图二；
[0058] 图 6为本申请实施例提供的蚀刻设备的横截面结构示意图三；
[0059] 图 7为本申请实施例提供的蚀刻设备的结构示意的俯视图。
发明实施例 本发明的实施方式
[0060] 为了使本申请所要解决的技术问题、 技术方案及有益效果更加清楚明白， 以下 结合附图及实施例， 对本申请进行进一步详细说明。 应当理解， 此处所描述的 具体实施例仅仅用以解释本申请， 并不用于限定本申请。
[0061] 需要说明的是， 当元件被称为“设置于”另一个元件， 它可以直接在另一个元件 上或者间接在该另一个元件上。 当一个元件被称为是“连接于”另一个元件， 它可 以是直接连接到另一个元件或间接连接至该另一个元件上。 此外， 术语“第一”、 “第二”仅用于描述目的， 而不能理解为指示或暗示相对重要性或者隐含指明所指 示的技术特征的数量。 由此， 限定有“第一”、 “第二”的特征可以明示或者隐含地 包括一个或者更多个该特征。 在本实用新型的描述中， “多个”的含义是两个或两 个以上， 除非另有明确具体的限定。
[0062] 请参阅图 1， 一种电极组件， 应用于蚀刻设备， 包括第一电极板 1， 第一电极板 1包括第一中心区域 11和环绕第一中心区域 11的第一边缘区域 12 ; 第一中心区域 11贯通开设有与进气装置连接的第一进气孔 111， 第一边缘区域 12贯通开设有与 进气装置连接的第二进气孔 121， 第二进气孔 121环绕设置在第一进气孔 111的外 围； 第一进气孔 111的横截面积小于第二进气孔 121的横截面积。
[0063] 本申请实施例提供的一种电极组件中， 由于开设于第一中心区域 11的第一进气 孔 111的横截面积小于开设于第一边缘区域 12的第二进气孔 121的横截面积， 因 此当蚀刻气体通过第一进气孔 111和第二进气孔 121进入蚀刻设备中时， 通过第 二进气孔 121的蚀刻气体的流速小于通过第一进气孔 111的蚀刻气体的流速， 进 而可以降低待加工基板上与第一边缘区域 12对应的部分的蚀刻速率， 使得待加 工基板上与第一中心区域 11对应部分的蚀刻速率与待加工基板上与第一边缘区 域 12对应的部分的蚀刻速率更接近， 从而有效提高待加工基板的各个部分的加 工均一性。
[0064] 在一个实施例中， 位于第一电极板 1的中心区域的进气孔 110的横截面积最小， 位于第一电极板 1的边缘区域的进气孔 110的横截面积最大， 位于第一电极板 1上 的所有进气孔 110的横截面积可以成等差数列排列， 从而使得第一电极板 1上的 所有进气孔 110的横截面积从第一电极板 1的中心区域向第一电极板 1的边缘区域 增大。
[0065] 应当理解的是， 位于第一电极板 1上的进气孔 110的横截面积可以以其他方式排 歹 IJ， 保证进气孔 110的横截面积从第一电极板 1的中心区域向第一电极板 1的边缘 区域增大即可。 进气孔 110的横截面积从第一电极板 1的中心与向第一电极板 1的 边缘区域增大的变化方式可以是线性变化、 阶梯性变化或其他任意变化方式， 此处不做限制， 保证进气孔 110的横截面积从第一电极板 1的中心区域向第一电 极板 1的边缘区域增大即可。
[0066] 请参阅图 2， 在一个实施例中， 多个第一进气孔 111均匀分布在第一中心区域 11 ， 从而使得第一中心区域 11的蚀刻气体的流速相同， 进而使得待加工基板上与 第一中心区域 11相对应的部分的蚀刻速率相同， 从而有效提高待加工基板上与 第一中心区域 11相对应的部分的加工均一性； 多个第二进气孔 121均匀分布在第 一边缘区域 12, 从而使得第一边缘区域 12的蚀刻气体的流速相同， 进而使得待 加工基板上与第一边缘区域 12相对应的部分的蚀刻速率相同， 从而有效提高待 加工基板上与第一边缘区域 12相对应的部分的加工均一性。
[0067] 在一个实施例中， 多个第一进气孔 111以不均匀或局部均匀的方式分布在第一 中心区域 11， 多个第二进气孔 121以不均匀或局部均匀的方式分布在第一边缘区 域 12, 只要使得待加工基板上与第一中心区域 11相对应的部分的蚀刻速率与待 加工基板上与第一边缘区域 12相对应的部分的蚀刻速率相同即可。
[0068] 在一个实施例中， 多个第一进气孔 111的形状与大小相同， 从而多个第一进气 孔 111的横截面积相同， 使得第一中心区域 11的蚀刻气体的流速相同， 进而使得 待加工基板上与第一中心区域 11相对应的部分的蚀刻速率相同， 从而有效提高 待加工基板上与第一中心区域 11相对应的部分的加工均一性；
[0069] 多个第二进气孔 121的形状与大小相同， 从而使得第一边缘区域 12的蚀刻气体 的流速相同， 进而使得待加工基板上与第一边缘区域 12相对应的部分的蚀刻速 率相同， 从而有效提高待加工基板上与第一边缘区域 12相对应的部分的加工均 一性；
[0070] 且第一进气孔 111的横截面积和第二进气孔 121的横截面积经过精心设计， 从而 使得待加工基板的中心区域蚀刻速率 （即待加工基板上与第一中心区域 11相对 应的部分的蚀刻速率） 与边缘区域蚀刻速率 （即待加工基板上与第一边缘区域 1 2相对应的部分的蚀刻速率） 相同， 提高待加工基板的各个部分的加工均一性。
[0071] 在一个实施例中， 多个第一进气孔 111的大小和形状局部相同， 多个第二进气 孔 121的大小和形状局部相同， 只要使得待加工基板上与第一中心区域 11相对应 的部分的蚀刻速率与待加工基板上与第一边缘区域 12相对应的部分的蚀刻速率 相同即可。
[0072] 在一个实施例中， 多个第一进气孔 111的大小和形状不同， 多个第二进气孔 121 的大小和形状不同， 只要使得待加工基板上与第一中心区域 11相对应的部分的 蚀刻速率与待加工基板上与第一边缘区域 12相对应的部分的蚀刻速率相同即可
[0073] 请参阅图 1和图 4， 本申请实施例的目的还在于提供一种蚀刻设备， 包括用于对 待加工基板 3进行蚀刻的腔体 100、 第一电极板 1和第二电极板 2; 第一电极板 1设 置在腔体 100内的上方、 靠近腔体 100的顶部 101， 包括第一中心区域 11和环绕第 一中心区域 11的第一边缘区域 12, 第一中心区域 11贯通开设有与进气装置连接 的第一进气孔 111， 第一边缘区域 12贯通开设有与进气装置连接的第二进气孔 12 1， 第二进气孔 121环绕设置在第一进气孔 111的外围， 第一进气孔 111的横截面 积小于第二进气孔 121的横截面积； 第二电极板 2设置在腔体 100内的下方、 靠近 腔体 100的底部 102、 并与第一电极板 1相对设立， 包括放置区和围绕放置区的第 二边缘区域； 待加工基板 3设于放置区上， 第一电极板 1的位置与待加工基板 3的 位置相对应； 腔体 100上还开设有用于与抽气装置连接的出气口 103， 出气口 103 设置在腔体 100内的下方且出气口 103的位置低于第二电极板 2的位置。
[0074] 本申请实施例提供的一种蚀刻设备的工作原理如下： 首先将待加工基板 3设置 在第二电极板 2上； 然后将进气装置与第一进气孔 111和第二进气孔 121连接， 将 抽气装置与出气口 103连接； 启动抽气装置和进气装置， 从而使得蚀刻气体通过 第一进气孔 111和第二进气孔 121进入到腔体 100内， 并对待加工基板 3进行蚀刻 ； 蚀刻气体最后通过出气口排出到腔体 100外。
[0075] 具体地， 请参阅图 3 , 在一个范例中， 在未对进气孔的横截面积进行调整时， 由于蚀刻气体会向腔体 100内部的角落流动， 而待加工基板 3的基板边缘区域更 靠近腔体 100的四个角落， 因此基板边缘区域的蚀刻速率要高于基板中心区域的 蚀刻速率， 造成待加工基板 3各部分的蚀刻程度不同， 因此待加工基板 3各部分 的加工均一性不佳。
[0076] 请参阅图 4， 在本实施例中， 第二进气孔 121的横截面积大于第一进气孔 111的 横截面积， 使得经过第二进气孔 121的蚀刻气体的气压要小于经过第一进气孔 11 1的蚀刻气体的气压， 因此第二进气孔 121中的蚀刻气体的流速要小于第一进气 孑 Lm中的蚀刻气体的流速， 从而使得流向腔体 ioo的四个角落的蚀刻气体会减 少， 从而可以降低基板边缘区域的蚀刻速率， 使得基板边缘区域的蚀刻速率与 基板中心区域的蚀刻速率更接近， 从而提高待加工基板 3的各部分的加工均一性
[0077] 本申请实施例提供的一种蚀刻设备中， 由于开设于第一中心区域 11的第一进气 孔 111的横截面积小于开设于第一边缘区域 12的第二进气孔 121的横截面积， 因 此当蚀刻气体通过第一进气孔 111和第二进气孔 121进入腔体 100中时， 通过第二 进气孔 121的蚀刻气体的流速小于通过第一进气孔 111的蚀刻气体的流速， 进而 可以降低基板边缘区域蚀刻速率， 使得基板边缘区域与基板中心区域的蚀刻速 率更接近， 从而有效提高待加工基板的各个部分的加工均一性。
[0078] 在一个实施例中， 位于第一电极板 1的中心区域的进气孔 110的横截面积最小， 位于第一电极板 1的边缘区域的进气孔 110的横截面积最大， 位于第一电极板 1上 的所有进气孔 110的横截面积可以成等差数列排列， 从而使得第一电极板 1上的 所有进气孔 110的横截面积从第一电极板 1的中心区域向第一电极板 1的边缘区域 增大。
[0079] 应当理解的是， 位于第一电极板 1上的进气孔 110的横截面积可以以其他方式排 歹 IJ， 保证进气孔 110的横截面积从第一电极板 1的中心区域向第一电极板 1的边缘 区域增大即可。 进气孔 110的横截面积从第一电极板 1的中心与向第一电极板 1的 边缘区域增大的变化方式可以是线性变化、 阶梯性变化或其他任意变化方式， 此处不做限制， 保证进气孔 110的横截面积从第一电极板 1的中心区域向第一电 极板 1的边缘区域增大即可。
[0080] 请参阅图 2和图 5， 在一个实施例中， 多个第一进气孔 111均匀分布在第一中心 区域 11， 从而使得蚀刻气体的流速在各个第一进气孔 111中均相同， 从而使得进 入第一中心区域 11内的蚀刻气体的流速相同， 进而使得基板中心区域的蚀刻速 率相同， 从而有效提高待加工基板 3的基板中心区域的加工均一性； 多个第二进 气孔 121均匀分布在第一边缘区域 12, 从而使得蚀刻气体的流速在各个第二进气 孔 121中均相同， 从而使得进入第一边缘区域 12内的蚀刻气体的流速相同， 进而 使得基板边缘区域的蚀刻速率相同， 从而有效提高待加工基板 3的基板边缘区域 的加工均一性。
[0081] 在一个实施例中， 多个第一进气孔 111以不均匀或局部均匀的方式分布在第一 中心区域 11， 多个第二进气孔 121以不均匀或局部均匀的方式分布在第一边缘区 域 12, 只要使得基板中心区域的蚀刻速率与基板边缘区域的蚀刻速率相同即可
[0082] 在一个实施例中， 多个第一进气孔 111的形状与大小相同， 从而多个第一进气 孔 111的横截面积相同， 使得第一中心区域 11的蚀刻气体的流速相同， 进而使得 基板中心区域的蚀刻速率相同， 从而有效提高基板中心区域的加工均一性； 多 个第二进气孔 121的形状与大小相同， 从而使得第一边缘区域 12的蚀刻气体的流 速相同， 进而使得基板边缘区域的蚀刻速率相同， 从而有效提高基板边缘区域 的加工均一性； 且第一进气孔 111的横截面积和第二进气孔 121的横截面积经过 精心设计， 从而使得基板中心区域的蚀刻速率与基板边缘区域的蚀刻速率相同 ， 提高待加工基板的各个部分的加工均一性。
[0083] 在一个实施例中， 多个第一进气孔 111的大小和形状局部相同， 多个第二进气 孔 121的大小和形状局部相同， 基板中心区域的蚀刻速率与基板边缘区域的蚀刻 速率相同即可。
[0084] 在一个实施例中， 多个第一进气孔 111的大小和形状不同， 多个第二进气孔 121 的大小和形状不同， 基板中心区域的蚀刻速率与基板边缘区域的蚀刻速率相同 即可。
[0085] 请参阅图 6和图 7， 在一个实施例中， 蚀刻设备还包括电浆 4， 电浆 4设于第一电 极板 1和待加工基板 3之间， 且与待加工基板 3的位置相对应。 可选地， 电浆 4位 于靠近待加工基板 3的一侧。 在工作时， 蚀刻气体通过第一进气孔 111和第二进 气孔 121进入腔体 100后到达电浆 4; 电浆 4将蚀刻气体分子分解， 产生能够快速 蚀去待加工基板 3的材料的高活性分子， 同时电浆 4也会将这些高活性分子离子 化； 离子化的高活性分子到达待加工基板 3后将待蚀刻材料从固相转化为气相， 并在抽气装置的作用下通过出气口 103从腔体 100中移除。
[0086] 通过设置电浆 4, 使得蚀刻气体能够更好地对待加工基板 3进行蚀刻， 可有效提 高蚀刻效果。 由于通过第二进气孔 121的蚀刻气体的流速小于通过第一进气孔 11 1的蚀刻气体的流速， 因此电浆 4的各个部分的消耗也更加均匀， 进而对待加工 基板 3的各部分的蚀刻速率也更加均匀， 从而提高待加工基板 3的各个部分的加 工均一性。
[0087] 在一个实施例中， 蚀刻设备还包括阻挡环 5和隔板 6， 阻挡环 5设置在第二电极 板 2的第二边缘区域， 并环绕设置在放置区的外围， 隔板 6环绕设置在第二电极 板 2的外侧， 并与阻挡环 5的外围邻接， 隔板 6上贯通设有隔板开口。 当待加工基 板 3放置到第二电极 2的放置区时， 放置区的外围环绕设置的阻挡环 5可以对待加 工基板 3起到稳定和固定的作用； 而在第二电极板 2的外侧环绕设置隔板 6 , 一方 面可以防止待加工基板 3破裂后的碎渣直接掉进出气口 103中进入到抽气装置， 引起抽气装置的损坏， 另一方面也可以对蚀刻气体起到一定的阻隔作用， 从而 对蚀刻气体的流动速率及流动方向起到控制作用， 使得蚀刻气体能够通过隔板 6 上开设的隔板开口进入出气口 103。
[0088] 可选地， 隔板 6上相应于出气口 103的位置开设有多个隔板通孔， 从而可以进一 步对蚀刻气体的流动速率、 流动方向以及蚀刻气体分布的均匀程度进行调节， 从而进一步提高待加工基板 3的各个部分的加工均一性。
[0089] 在一个实施例中， 待加工基板 3包括玻璃基板 31和覆盖在玻璃基板 31表面的薄 膜 32， 薄膜 32设有与待蚀刻的图案对应的镂空区域。 薄膜 32可以对玻璃基板 31 起到保护作用， 从而保证蚀刻气体对玻璃基板 31上需要蚀刻的部分进行蚀刻， 而不需要蚀刻的部分则由于薄膜 32的覆盖而无法接触到蚀刻气体。
[0090] 在一个实施例中， 出气口 103开设于腔体 100的底部 102， 且出气口 103与隔板开 口的位置相对应。 具体地， 底部 102的每侧与隔板 6相对应的位置的两侧均开设 有出气口 103 , 即出气口 103的数量为 8个， 腔体 100的四个角落的每个角落附近 均设有两个出气口 103。 这样设置， 一方面有助于蚀刻气体在经过隔板开口后能 够在抽气装置的作用下迅速通过出气口 103从腔体 100中排出， 另一方面出气口 1 03位置与隔板开口的位置相配合、 同时出气口 103的位置与第一电极板 1上开设 的第一进气孔 111、 第二进气孔 121相配合， 有助于蚀刻气体在待加工基板 3上的 分布更均匀， 从而使得基板中心区域的蚀刻速率与基板边缘区域的蚀刻速率相 同， 进一步提高待加工基板 3的各个部分的加工均一性。
[0091] 在一个实施例中， 出气口 103开设于腔体 100的侧边， 且出气口 103的位置低于 第二电极板 2的位置， 从而使得蚀刻气体在经过待加工基板 3后再进入出气口 103 ; 出气口 103靠近隔板开口， 一方面有助于蚀刻气体在经过隔板开口后能够在抽 气装置的作用下迅速通过出气口 103从腔体 100中排出， 另一方面出气口 103位置 与隔板开口的位置相配合、 同时出气口 103的位置与第一电极板 1上开设的第一 进气孔 111、 第二进气孔 121相配合， 有助于蚀刻气体在待加工基板 3上的分布更 均匀， 从而使得基板中心区域的蚀刻速率与基板边缘区域的蚀刻速率相同， 进 一步提高待加工基板 3的各个部分的加工均一性。 应当理解的是， 出气口 103的 数量和位置可以根据需要进行设定。
[0092] 请参阅图 4至图 7 , 本申请实施例的目的还在于提供一种蚀刻设备， 包括用于对 待加工基板 3进行蚀刻的腔体 100、 第一电极板 1和第二电极板 2; 第一电极板 1设 置在腔体 100内的上方、 靠近腔体 100的顶部 101， 包括第一中心区域 11和环绕第 一中心区域 11的第一边缘区域 12, 第一中心区域 11贯通开设有与进气装置连接 的第一进气孔 111， 第一边缘区域 12贯通开设有与进气装置连接的第二进气孔 12 1， 第二进气孔 121环绕设置在第一进气孔 111的外围， 第一进气孔 111的横截面 积小于第二进气孔 121的横截面积； 第二电极板 2设置在腔体 100内的下方、 靠近 腔体 100的底部 102、 并与第一电极板 1相对设立， 包括放置区和围绕放置区的第 二边缘区域； 待加工基板 3设于放置区上， 第一电极板 1的位置与待加工基板 3的 位置相对应； 腔体 100上还开设有用于与抽气装置连接的出气口 103， 出气口 103 设置在腔体 100内的下方且出气口 103的位置低于第二电极板 2的位置。
[0093] 蚀刻设备还包括电浆 4、 阻挡环 5和隔板 6， 电浆 4设于第一电极板 1和待加工基 板 3之间， 且与待加工基板 3的位置相对应； 阻挡环 5设置在第二电极板 2的第二 边缘区域， 并环绕设置在放置区的外围； 隔板 6环绕设置在第二电极板 2的外侧 ， 并与阻挡环 5的外围邻接， 隔板 6上贯通设有隔板开口。
[0094] 可选地， 电浆 4位于靠近待加工基板 3的一侧。 在工作时， 蚀刻气体通过第一进 气孔 111和第二进气孔 121进入腔体 100后到达电浆 4; 电浆 4将蚀刻气体分子分解 ， 产生能够快速蚀去待加工基板 3的材料的高活性分子， 同时电浆 4也会将这些 高活性分子离子化； 离子化的高活性分子到达待加工基板 3后将待蚀刻材料从固 相转化为气相， 并在抽气装置的作用下通过出气口 103从腔体 100中移除。
[0095] 本申请实施例提供的一种蚀刻设备中， 由于开设于第一中心区域 11的第一进气 孔 111的横截面积小于开设于第一边缘区域 12的第二进气孔 121的横截面积， 因 此当蚀刻气体通过第一进气孔 111和第二进气孔 121进入腔体 100中时， 通过第二 进气孔 121的蚀刻气体的流速小于通过第一进气孔 111的蚀刻气体的流速， 进而 可以降低基板边缘区域蚀刻速率， 使得基板边缘区域与基板中心区域的蚀刻速 率更接近， 从而有效提高待加工基板的各个部分的加工均一性。
[0096] 设置电浆 4， 使得蚀刻气体能够更好地对待加工基板 3进行蚀刻， 可有效提高蚀 刻效果。 由于通过第二进气孔 121的蚀刻气体的流速小于通过第一进气孔 111的 蚀刻气体的流速， 因此电浆 4的各个部分的消耗也更加均匀， 进而对待加工基板 3的各部分的蚀刻速率也更加均匀， 从而提高待加工基板 3的各个部分的加工均 一性。
[0097] 阻挡环 5可以对待加工基板 3起到稳定和固定的作用； 设置隔板 6， 一方面可以 防止待加工基板 3破裂后的碎渣直接掉进出气口 103中进入到抽气装置， 引起抽 气装置的损坏， 另一方面也可以对蚀刻气体起到一定的阻隔作用， 从而对蚀刻 气体的流动速率及流动方向起到控制作用， 使得蚀刻气体能够通过隔板 6上开设 的隔板开口进入出气口 103。
[0098] 以上所述仅为本申请的较佳实施例而已， 并不用以限制本申请， 凡在本申请的 精神和原则之内所作的任何修改、 等同替换和改进等， 均应包含在本申请的保 护范围之内。

Claims

权利要求书
[权利要求 1] 一种电极组件， 其特征在于,包括：
第一电极板， 包括第一中心区域和环绕所述第一中心区域的第一边缘 区域；
第一进气孔， 与进气装置连接， 贯通开设在所述第一中心区域； 第二进气孔， 与所述进气装置连接， 贯通开设在所述第一边缘区域， 且环绕设置在多个所述第一进气孔的外围， 所述第一进气孔的横截面 积小于所述第二进气孔的横截面积。
[权利要求 2] 如权利要求 1所述的电极组件， 其特征在于， 多个所述第一进气孔以 均匀或局部均匀的方式贯通开设在所述第一中心区域。
[权利要求 3] 如权利要求 1所述的电极组件， 其特征在于， 多个所述第一进气孔以 不均匀的方式贯通开设在所述第一中心区域。
[权利要求 4] 如权利要求 1所述的电极组件， 其特征在于， 多个所述第二进气孔以 均匀或局部均匀的方式贯通开设在所述第一边缘区域。
[权利要求 5] 如权利要求 1所述的电极组件， 其特征在于， 多个所述第二进气孔以 不均匀的方式贯通开设在所述第一边缘区域。
[权利要求 6] 如权利要求 1所述的电极组件， 其特征在于， 多个所述第一进气孔的 形状与大小相同、 局部相同或不同。
[权利要求 7] 如权利要求 1所述的电极组件， 其特征在于， 多个所述第二进气孔的 形状与大小相同、 局部相同或不同。
[权利要求 8] 一种蚀刻设备， 其特征在于， 包括：
腔体；
第一电极板， 设置在所述腔体内的上方， 包括第一中心区域和环绕所 述第一中心区域的第一边缘区域；
第二电极板， 设置在所述腔体内的下方， 并与所述第一电极板相对设 立， 包括放置区和围绕所述放置区的第二边缘区域， 待加工基板设置 在所述放置区；
第一进气孔， 与进气装置连接， 贯通开设在所述第一中心区域， 多个 所述第一进气孔正对所述待加工基板；
第二进气孔， 与所述进气装置连接， 贯通开设在所述第一边缘区域， 且环绕设置在多个所述第一进气孔的外围， 所述第一进气孔的横截面 积小于所述第二进气孔的横截面积；
出气口， 与抽气装置连接， 设置在所述腔体内的下方且所述出气口的 位置低于所述第二电极板的位置。
[权利要求 9] 如权利要求 8所述的蚀刻设备， 其特征在于， 多个所述第一进气孔以 均匀或局部均匀的方式贯通开设在所述第一中心区域。
[权利要求 10] 如权利要求 8所述的蚀刻设备， 其特征在于， 多个所述第一进气孔以 不均匀的方式贯通开设在所述第一中心区域。
[权利要求 11] 如权利要求 8所述的蚀刻设备， 其特征在于， 多个所述第二进气孔以 均匀或局部均匀的方式贯通开设在所述第一边缘区域。
[权利要求 12] 如权利要求 8所述的蚀刻设备， 其特征在于， 多个所述第二进气孔以 不均匀的方式贯通开设在所述第一边缘区域。
[权利要求 13] 如权利要求 8所述的蚀刻设备， 其特征在于， 多个所述第一进气孔的 形状与大小相同、 局部相同或不同。
[权利要求 14] 如权利要求 8所述的蚀刻设备， 其特征在于， 多个所述第二进气孔的 形状与大小相同、 局部相同或不同。
[权利要求 15] 如权利要求 8所述的蚀刻设备， 其特征在于， 所述蚀刻设备还包括： 电浆， 设于所述第一电极板和所述待加工基板之间， 且与所述待加工 基板的位置相对应。
[权利要求 16] 如权利要求 8所述的蚀刻设备， 其特征在于， 所述蚀刻设备还包括： 阻挡环， 设置在所述第二边缘区域， 并环绕设置在所述放置区的外围 隔板， 环绕设置在所述第二电极板的外侧， 并与所述阻挡环的外围邻 接， 所述隔板上贯通设有隔板开口。
[权利要求 17] 如权利要求 16所述的蚀刻设备， 其特征在于， 所述出气口开设于所述 腔体的底部， 且所述出气口与所述隔板开口的位置相对应。
[权利要求 18] 如权利要求 16所述的蚀刻设备， 其特征在于， 所述出气口开设于所述 腔体的侧边， 且所述出气口靠近所述隔板开口。
[权利要求 19] 如权利要求 8所述的蚀刻设备， 其特征在于， 所述待加工基板包括玻 璃基板和覆盖在所述玻璃基板表面的薄膜， 所述薄膜设有与待蚀刻的 图案对应的镂空区域。
[权利要求 20] 一种蚀刻设备， 其特征在于， 包括：
腔体；
第一电极板， 设置在所述腔体内的上方， 包括第一中心区域和环绕所 述第一中心区域的第一边缘区域；
第二电极板， 设置在所述腔体内的下方， 并与所述第一电极板相对设 立， 包括放置区和围绕所述放置区的第二边缘区域， 待加工基板设置 在所述放置区；
第一进气孔， 与进气装置连接， 贯通开设在所述第一中心区域， 多个 所述第一进气孔正对所述待加工基板；
第二进气孔， 与所述进气装置连接， 贯通开设在所述第一边缘区域， 且环绕设置在多个所述第一进气孔的外围， 所述第一进气孔的横截面 积小于所述第二进气孔的横截面积；
电浆， 设于所述第一电极板和所述待加工基板之间， 且与所述待加工 基板的位置相对应；
阻挡环， 设置在所述第二边缘区域， 并环绕设置在所述放置区的外围 隔板， 环绕设置在所述第二电极板的外侧， 并与所述阻挡环的外围邻 接， 所述隔板上贯通设有隔板开口；
出气口， 与抽气装置连接， 设置在所述腔体内的下方且所述出气口的 位置低于所述第二电极板的位置。
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