WO2018201529A1 - 干蚀刻设备及干蚀刻设备的电极 - Google Patents

干蚀刻设备及干蚀刻设备的电极 Download PDF

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Publication number
WO2018201529A1
WO2018201529A1 PCT/CN2017/085154 CN2017085154W WO2018201529A1 WO 2018201529 A1 WO2018201529 A1 WO 2018201529A1 CN 2017085154 W CN2017085154 W CN 2017085154W WO 2018201529 A1 WO2018201529 A1 WO 2018201529A1
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Prior art keywords
electrode
disposed
dry etching
chamber
etching apparatus
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PCT/CN2017/085154
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English (en)
French (fr)
Inventor
温俊斌
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惠科股份有限公司
重庆惠科金渝光电科技有限公司
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Priority to US15/541,011 priority Critical patent/US20200006040A1/en
Publication of WO2018201529A1 publication Critical patent/WO2018201529A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3344—Problems associated with etching isotropy

Definitions

  • the present application relates to an electrode for a dry etching apparatus and a dry etching apparatus.
  • the etching process is divided into a dry etching process and a wet etching process according to the physical state of the etchant, that is, a dry etching process is a process of etching using an etching gas, and a wet etching process is a process of etching using an etching liquid.
  • the ideal process gas is completely under the action of the blowing force of the intake system, the suction of the pumping system, and the voltage between the electrode plates.
  • the surface of the substrate to be processed is blown perpendicular to the direction of the substrate surface to be processed.
  • each part of the substrate surface to be processed is exposed to an equal amount of etching gas during the whole processing, so that the parts of the processing substrate are expected to be the same.
  • the rate is processed to ensure process uniformity of the various parts of the substrate to be processed during processing.
  • the etching gas will be directed to the corner of the chamber during the actual operation. Flow, there is a difference in etching degree between the four corners and other positions, and an improper loading effect is formed, so that the etching degree of each part of the substrate to be processed is different, resulting in the processing uniformity of each part of the substrate to be processed (Panel Uniformity). Good, leading to product retirement.
  • the purpose of the present application is to provide an electrode for a dry etching apparatus and a dry etching apparatus, which can improve the uniform distribution of the flow direction of the etching gas without significantly changing the existing dry etching process.
  • An electrode of a dry etching apparatus comprising: an electrode plate, the surface comprising a component placement area and an edge area surrounding the component placement area; and a barrier ring disposed at the edge area Located at a periphery of the component placement area; and a spacer disposed outside the electrode plate adjacent to a periphery of the barrier ring, the spacer having a plurality of perforations.
  • the spacers are disposed at equal intervals, unequal spacing, partial equal spacing, or no spacing.
  • the periphery of the blocking ring is disposed at equal intervals, unequal spacing, partial equal spacing, or no spacing.
  • the plurality of perforations are disposed in the partition in a uniform, uneven, and partially uniform manner.
  • the shapes and sizes of the plurality of perforations are the same, different, or partially the same.
  • a dry etching apparatus comprising: a chamber; a base is disposed inside the chamber; a first electrode is disposed on the base, the surface includes a component placement area and is placed around the component An edge region of the region; a barrier ring disposed at a periphery of the component placement region; a spacer disposed at an outer edge of the first electrode, located at a periphery of the barrier ring, the spacer having a plurality of perforations a second electrode disposed inside the chamber and disposed opposite the first electrode; an air inlet disposed on the chamber side, the horizontal position of the air inlet being higher than the first electrode a horizontal position; and an air suction port is disposed on the inner side of the chamber, and a horizontal position of the air suction port is lower than a horizontal position of the first electrode.
  • the spacers are disposed on the periphery of the barrier ring at equal intervals, unequal spacing, partial equal spacing, or no spacing.
  • the plurality of perforations are disposed in the partition in a uniform, uneven, and partially uniform manner.
  • the shapes and sizes of the plurality of perforations are the same, different, or partially the same.
  • the air suction port is disposed at a bottom of the chamber and disposed opposite to an opening of the partition.
  • the air suction port is disposed at a side of the chamber adjacent to an opening of the partition.
  • Still another object of the present application is a dry etching apparatus comprising: a chamber; a base disposed inside the chamber; a first electrode disposed on the base, the surface including a component placement area and surrounding An edge region of the component placement zone; a barrier ring disposed at the periphery of the component placement zone; a spacer disposed outside the electrode plate adjacent to a periphery of the barrier ring, the spacer having a plurality of perforations; a second electrode disposed inside the chamber and disposed opposite the first electrode; an air inlet disposed on the chamber side, the horizontal position of the air inlet being higher than a horizontal position of the first electrode; an air suction port disposed on the inner side of the chamber, the horizontal position of the air suction port being lower than a horizontal position of the first electrode; wherein the partition plates are equally spaced, unequal spacing Providing a peripheral portion of the barrier ring at a periphery of the barrier ring; the plurality of through holes are disposed in the spacer in a uniform
  • the application can not significantly change the premise of the existing dry etching process, improve the uniform distribution of the flow direction of the etching gas, avoid the etching gas continuously flowing toward the corner of the chamber, and reduce the etching degree of the four corners of the substrate to be processed and other positions.
  • the undue load effect is reduced, the processing uniformity of each part of the substrate to be processed is maintained, and the manufacturing yield of the substrate to be processed is improved.
  • FIG. 1a is a schematic structural view of an exemplary dry etching apparatus.
  • Figure 1b is a schematic top plan view of an electrode structure of an exemplary dry etching apparatus.
  • FIG. 2 is a schematic plan view showing an electrode structure applied to a dry etching apparatus according to a method of the present application.
  • FIG 3 is a schematic cross-sectional view of a structure applied to a dry etching apparatus in accordance with a method of the present application.
  • FIG. 4 is a top plan view showing an electrode structure applied to a dry etching apparatus according to a method of the present application.
  • FIG. 5 is a top plan view showing an electrode structure applied to a dry etching apparatus according to a method of the present application.
  • FIG. 6 is a top plan view showing an electrode structure applied to a dry etching apparatus according to a method of the present application.
  • the word “comprising” is to be understood to include the component, but does not exclude any other component.
  • “on” means located above or below the target component, and does not mean that it must be on the top based on the direction of gravity.
  • the manufacturing process usually involves first coating a film on the surface to be processed of the workpiece to be processed, and then using lithography to define a circuit pattern on the film by photoresist, and then using chemical or physical means to remove the unnecessary portion. Removal, this removal step is called etching.
  • etching process uniformity is usually used to describe the degree of etching of the entire workpiece under a certain process. In a particular process, the degree of etching at different locations on the same workpiece processing surface is closer to that of the process.
  • the etching process is generally classified into a wet etching process and a dry etching process.
  • the wet etching process uses a liquid as a medium for etching
  • a dry etching process uses a gas as a medium for etching. Therefore, for the dry etching process, the amount of etching gas that is to be contacted by the workpiece to be processed in the entire process becomes an important determinant of the etching rate.
  • improving the process uniformity of dry etching equipment is mainly achieved by adjusting parameters such as pressure and gas flow.
  • the workpieces to be processed are getting larger and larger, and the process uniformity improvement is more and more difficult.
  • the dry etching apparatus 100 includes a chamber 110 for performing an etching operation on the substrate 200 to be processed.
  • the side surface of the chamber 110 is provided with a chamber door 111 for conveying the substrate 200 to be processed.
  • the base 112 is disposed inside the chamber 110. The normal state is to be disposed at the bottom of the chamber 110, and the base 112 is for placing the substrate 200 to be processed.
  • the first electrode 121 and the second electrode 122 are disposed opposite to each other in the chamber 110 for controlling the flow of the etching gas 130.
  • the suction port 141 is disposed at the bottom or side of the chamber 110 of the dry etching apparatus 100, and is disposed in cooperation with the air extracting device 142 for discharging the etching gas 130.
  • the suction device 142 may also be directly disposed at the location of the suction port 141.
  • the horizontal position of the suction port 141 is lower than the horizontal position of the first electrode 121.
  • the air inlet is disposed at the top or side of the chamber 110 of the dry etching apparatus 100, and is disposed in cooperation with the air intake device for blowing the etching gas 130.
  • the location of the air inlet may also be provided with an air intake directly.
  • the horizontal position of the air inlet is higher than the horizontal position of the first electrode 121.
  • the air intake system of the dry etching apparatus 100 is erected at the second electrode 122 at the top of the etch chamber 110 for blowing the etching gas 130, since the position of the air inlet and the second electrode 122 coincide, This is not embodied in Figure 1a.
  • the surface of the first electrode 121 is provided with a blocking ring 113, which provides a non-slip, stable component and a fixed position when the substrate to be processed 200 is placed on the first electrode 121.
  • the outermost side of the first electrode 121 is, in principle, the outer edge of the barrier ring 113, and the partition 114 is disposed.
  • the spacer 114 is configured to allow the flow rate and the flow direction to be effectively controlled by the flow of the etching gas 130, and to protect the local portion of the first electrode 121 in a targeted manner.
  • the spacer 114 is generally of a planar design.
  • the corners inside the chamber 110 are generally left blank, that is, no components are installed, or Set up the grid under the designer's needs.
  • the present application optimizes and improves the electrodes of the dry etching apparatus, thereby improving the flow direction of the etching gas during the processing, and achieving the purpose of controlling the amount of etching gas contacted at different positions on the surface to be processed of the workpiece to be processed in the entire process, thereby improving the uniformity of the process. Sex.
  • Process uniformity can be improved using the dry etching apparatus 100 of the present application.
  • the operation mode of the present application is mainly described based on the dry etching apparatus 100 for processing a liquid crystal display panel, and then the etching process is mainly based on processing a glass substrate.
  • the application of the dry etching apparatus 100 of the present application is not limited thereto, and any processing and manufacturing process using a dry etching process can be used.
  • the dry etching apparatus 100 described herein is employed.
  • an electrode of the dry etching apparatus 100 includes an electrode plate (taking the first electrode 121 as an example), and the surface includes a component placement area 123 and surrounding the component.
  • An edge region 124 of the region 123; a barrier ring 113 is disposed at the edge region 124 at a periphery of the component placement region 123; and a spacer 114 is disposed at an outer edge of the first electrode 121 at the barrier ring 113
  • the partition 114 has a plurality of perforations.
  • the dry etching apparatus includes: a chamber 110; and a base 112 disposed inside the chamber 110 is disposed at the bottom of the chamber 110 in principle.
  • a first electrode 121 disposed on the base 112, the surface of which includes a component placement area 123 and an edge area 124 surrounding the component placement area 123; a barrier ring 113 disposed at the edge area 124, located in the component a periphery of the placement area 123; a partition 114 disposed outside the electrode plate, located at a periphery of the barrier ring 113, the partition 114 having a plurality of perforations 125; disposed inside the chamber 110 and a second electrode 122 disposed opposite to the first electrode 121; an air inlet disposed inside the chamber 110, the horizontal position of the air inlet is higher than the horizontal position of the first electrode 121, and is usually set
  • the second electrode 122 at the top of the chamber 110 is disposed in cooperation with the air intake device for blowing the etching gas 130.
  • the air extracting device 142 is provided for discharging the etching gas 130.
  • the horizontal position of the air extracting port 141 is lower than the horizontal position of the first electrode 121, and is generally disposed at the bottom of the chamber 110. Below. There is a constant voltage difference between the first electrode 121 and the second electrode 122 for controlling the flow direction of the etching gas 130.
  • the spacer 114 has a plurality of through holes 125. According to the position of the through holes 125, the flow rate, the direction and the uniformity of the gas distribution of the etching gas 130 can be limited, and the etching gas 130 can be The perforation 125 passes through the partition 114 and flows under the partition 114 so as to be discharged from the chamber 110 by the suction port 141 without being restricted to the corner of the chamber 110.
  • the spacers 114 are disposed on the periphery of the barrier ring 113 in a non-spaced (or continuous configuration) manner.
  • the plurality of perforations 125 are disposed in the partition 114 in a uniform manner.
  • the plurality of perforations 125 are identical in shape and size.
  • FIG. 4 is a top plan view showing an electrode structure applied to a dry etching apparatus according to a method of the present application.
  • the spacers 114 are disposed on the periphery of the barrier ring 113 in an equally spaced manner.
  • the spacers 114 are disposed on the periphery of the barrier ring 113 at unequal spacing or partial equal spacing.
  • FIG. 5 is a top plan view showing an electrode structure applied to a dry etching apparatus according to a method of the present application.
  • the plurality of perforations 125 are disposed in the partition 114 in a non-uniform manner.
  • the plurality of perforations 125 are disposed in the partition 114 in a partially uniform manner.
  • FIG. 6 is a top plan view showing an electrode structure applied to a dry etching apparatus according to a method of the present application.
  • the plurality of perforations 125 are different in shape and size from the same.
  • the air suction port 141 is disposed at a bottom of the chamber 110 opposite to the opening of the partition plate 114.
  • the air extraction port 141 is disposed on a side of the chamber 110 adjacent the opening 125 of the partition 114.
  • the application can improve the uniform distribution of the flow direction of the etching gas 130 without greatly changing the premise of the existing dry etching process, and prevent the etching gas 130 from continuously flowing toward the corners of the chamber 110, thereby reducing the etching of the four corners of the substrate to be processed and other locations.
  • There is a difference in degree which reduces the occurrence of an inappropriate load effect, maintains the processing uniformity of each portion of the substrate 200 to be processed, and improves the manufacturing yield of the substrate 200 to be processed.
  • the substrate to be processed 200 may be, for example, a glass substrate or a flexible substrate of a display panel.
  • the substrate to be processed 200 may be, for example, a substrate of a semiconductor device.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

一种干蚀刻设备（100）及干蚀刻设备的电极，此干蚀刻设备的电极，包括：电极板（121），表面包括组件放置区（123）及环绕此组件放置区（123）的边缘区（124）；阻挡环（113），设置在此边缘区（124），位于此组件放置区（123）的外围；以及隔板（114），设置在此电极板（121）外侧，邻接此阻挡环（113）的外围，此隔板（114）具有多个穿孔（125）。

Description

干蚀刻设备及干蚀刻设备的电极 技术领域
本申请涉及一种干蚀刻设备及干蚀刻设备的电极。
背景技术
随着科技进步，具有省电、无幅射、体积小、低耗电量、平面直角、高分辨率、画质稳定等多项优势的液晶显示器，尤其是现今各式信息产品如：手机、笔记本电脑、数字相机、PDA、液晶屏幕等产品越来越普及，也使得液晶显示器(Liquid Crystal Display，LCD)的需求量大大提升。因而推动了液晶显示面板行业的快速发展，面板的产量不断提升。蚀刻工艺是制造液晶显示面板的阵列基板过程中的一个重要步骤。蚀刻工艺根据蚀刻剂的物理状态分为干蚀刻工艺和湿蚀刻工艺，即干蚀刻工艺为利用蚀刻气体进行蚀刻的工艺，湿蚀刻工艺为利用蚀刻液体进行蚀刻的工艺。
在利用干蚀刻工艺进行阵列基板制造的过程中，理想状态下蚀刻气体(Process Gas)是在进气系统的吹力、抽气系统的吸力、电极板之间的电压等因素的作用下以完全垂直于待加工基板面的方向吹向待加工基板面。在整个加工过程中，在保证蚀刻气体的气压、气流的稳定的前提下，使整个加工过程中待加工基板面每个部分接触到相等的量的蚀刻气体、以期待加工基板各部分会以相同速率被处理，确保待加工基板各部分在加工过程中的加工均一性。
但是，由于腔室内部的角落一般为隔网或不装设任何组件，再加上蚀刻腔体内部设计结构以及排气系统设计等因素，导致在实际操作中蚀刻气体会向腔室内部的角落流动，四角落与其他位置蚀刻程度有落差，形成不适当的负载效应(Loading Effect)，使得待加工基板各个部分的蚀刻程度不同，造成待加工基板的各部分的加工均一性(Panel Uniformity)不佳，导致产品报废。
发明内容
为了解决上述技术问题，本申请的目的在于，提供一种干蚀刻设备及干蚀刻设备的电极，可以在不大幅改变现有干蚀刻流程的前提，提升蚀刻气体流动方向的均匀分布情形。
本申请的目的及解决其技术问题是采用以下技术方案来实现的。依据本申请提出的一种干蚀刻设备的电极，所述干蚀刻设备的电极，包括：电极板，表面包括组件放置区及环绕所述组件放置区的边缘区；阻挡环设置在所述边缘区，位于所述组件放置区的外围；以及，隔板设置在所述电极板外侧，邻接所述阻挡环的外围，所述隔板具有多个穿孔。
本申请解决其技术问题还可采用以下技术措施进一步实现。
在本申请的一实施例中，所述隔板以等间距、不等间距、局部等间距或无间隔的方式设置于所 述阻挡环的外围。
在本申请的一实施例中，所述多个穿孔以均匀、不均匀、局部均匀的方式设置于所述隔板。
在本申请的一实施例中，所述多个穿孔的形状与大小是相同、相异或局部相同。
本申请的另一目为一种干蚀刻装置，包括：腔室；基台设置于所述腔室的内部；第一电极设置于所述基台上，表面包括组件放置区及环绕所述组件放置区的边缘区；阻挡环设置在所述边缘区位于所述组件放置区的外围；隔板设置在所述第一电极外缘，位于所述阻挡环的外围，所述隔板具有多个穿孔；第二电极设置于所述腔室的内部并与所述第一电极对向设置；进气口设置于所述腔室内侧，所述进气口的水平位置高于所述第一电极的水平位置；以及，抽气口设置于所述腔室内侧，所述抽气口的水平位置低于所述第一电极的水平位置。
本申请解决其技术问题还可采用以下技术措施进一步实现。
在本申请的一实施例中，所述隔板以等间距、不等间距、局部等间距或无间隔的方式设置于所述阻挡环的外围。
在本申请的一实施例中，所述多个穿孔以均匀、不均匀、局部均匀的方式设置于所述隔板。
在本申请的一实施例中，所述多个穿孔的形状与大小是相同、相异或局部相同。
在本申请的一实施例中，所述抽气口设置于所述腔室的底部，与所述隔板的开口对向设置。
在本申请的一实施例中，所述抽气口设置于所述腔室的侧边，邻接所述隔板的开口。
本申请的又一目为一种干蚀刻装置，包括：腔室；基台，设置于所述腔室的内部；第一电极，设置于所述基台上，表面包括组件放置区及环绕所述组件放置区的边缘区；阻挡环，设置在所述边缘区，位于所述组件放置区的外围；隔板，设置在所述电极板外侧，邻接所述阻挡环的外围，所述隔板具有多个穿孔；第二电极，设置于所述腔室的内部并与所述第一电极对向设置；进气口，设置于所述腔室内侧，所述进气口的水平位置高于所述第一电极的水平位置；抽气口，设置于所述腔室内侧，所述抽气口的水平位置低于所述第一电极的水平位置；其中，所述隔板以等间距、不等间距、局部等间距或无间隔的方式设置于所述阻挡环的外围；所述多个穿孔以均匀、不均匀或局部均匀的方式设置于所述隔板；所述多个穿孔的形状与大小是相同、相异或局部相同；通过所述多个穿孔，以限制蚀刻气体的流动速率、方向及气体分布的均匀程度。
有益效果
本申请可以不大幅改变现有干蚀刻流程的前提，提升蚀刻气体流动方向的均匀分布情形，避免蚀刻气体持续朝向腔室内部的角落流动，减少待加工基板四角落与其他位置蚀刻程度有落差，降低不适当的负载效应产生情形，维持待加工基板的各部分的加工均一性，提升待加工基板的制造良率。
附图说明
图1a为范例性的干蚀刻设备的结构示意图。
图1b为范例性的干蚀刻设备的电极结构示意的俯视图。
图2为依据本申请的方法，一实施例应用于干蚀刻设备的电极结构示意的俯视图。
图3为依据本申请的方法，一实施例应用于干蚀刻设备的结构横截面示意图。
图4为依据本申请的方法，一实施例应用于干蚀刻设备的电极结构示意的俯视图。
图5为依据本申请的方法，一实施例应用于干蚀刻设备的电极结构示意的俯视图。
图6为依据本申请的方法，一实施例应用于干蚀刻设备的电极结构示意的俯视图。
本发明的实施方式
以下各实施例的说明是参考附加的图式，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。
附图和说明被认为在本质上是示出性的，而不是限制性的。在图中，结构相似的单元是以相同标号表示。另外，为了理解和便于描述，附图中示出的每个组件的尺寸和厚度是任意示出的，但是本申请不限于此。
在附图中，为了清晰起见，夸大了层、膜、面板、区域等的厚度。在附图中，为了理解和便于描述，夸大了一些层和区域的厚度。将理解的是，当例如层、膜、区域或基底的组件被称作“在”另一组件“上”时，所述组件可以直接在所述另一组件上，或者也可以存在中间组件。
另外，在说明书中，除非明确地描述为相反的，否则词语“包括”将被理解为意指包括所述组件，但是不排除任何其它组件。此外，在说明书中，“在......上”意指位于目标组件上方或者下方，而不意指必须位于基于重力方向的顶部上。
为更进一步阐述本申请为达成预定申请目的所采取的技术手段及功效，以下结合附图及较佳实施例，对依据本申请提出的一种干蚀刻设备及干蚀刻设备的电极，其具体实施方式、结构、特征及其功效，详细说明如后。
在电子设备的集成电路制造过程中，常需要在工件表面将整个电路图案定义出来。其制造程序通常是先在待加工工件的待加工面上盖上一层薄膜，再利用微影技术在这层薄膜上以光阻定义出电路图案，再利用化学或物理方式将不需要的部分去除，此种去除步骤便称为蚀刻。在蚀刻工艺中，通常使用制程均一性来描述在某一制程下工件整体的蚀刻程度。在一特定制程中，同一工件加工面上不同位置的蚀刻程度越接近其制程均一性越高。为保证工件各部分能够同时完成蚀刻加工，保证工件加工良品率以及工件品质，需要对工件各部分的蚀刻程度进行控制，尽量保证待加工工件各部分以相同的速率被蚀刻。即在蚀刻制程中保证较高的制程均一性。
蚀刻工艺通常分为湿蚀刻工艺和干蚀刻工艺。顾名思义，湿蚀刻工艺是采用液体作媒介进行蚀刻，干蚀刻工艺是采用气体作媒介进行蚀刻。因此对于干蚀刻工艺，在整个制程中待加工工件待加工面接触到的蚀刻气体的量就成了决定蚀刻速率的一个重要决定因素。一般情况下改善干蚀刻设备制程均一性主要是通过调整压力、气体流量等参数实现。但是随着对制程均一性要求的不断提高，仅仅通过上述几个参数调整已很难进一步提升制程均一性，尤其是目前待加工工件越来越大，制程均一性改善难度也越来越大。
图1a为范例性的干蚀刻设备的结构示意图及图1b为范例性的干蚀刻设备的电极结构示意的俯视图。如图1a所示，干蚀刻设备100包括：供待加工基板200进行蚀刻作业用的腔室110。腔室110的侧面设置有用于传送待加工基板200的腔门111。基台112设置在腔室110内部，常态的作法是设置于腔室110的底部，基台112是用于放置待加工基板200。第一电极121与第二电极122是对向设置方式而被配置在腔室110内部，用于控制蚀刻气体130流向，常态是一者设置在腔室110上方，另一者即设置腔室110底部的基台112上。抽气口141设置于干蚀刻设备100的腔室110底部或侧边，其与抽气装置142配套设置而用于排出蚀刻气体130。在一些实施例中，抽气口141的部位也可以直接设置抽气装置142。原则上，抽气口141的水平位置要低于所述第一电极121的水平位置。进气口设置于干蚀刻设备100的腔室110顶部或侧边，其与进气装置配套设置而用于吹入蚀刻气体130。在一些实施例中，进气口的部位也可以直接设置进气装置。原则上，进气口的水平位置要高于所述第一电极121的水平位置。在一些实施例中，干蚀刻设备100的进气系统架设在蚀刻腔室110顶部的第二电极122处，用于吹进蚀刻气体130，由于进气口的位置和第二电极122重合，其在图1a中没有具体体现。
请继续参考图1a及图1b，第一电极121的表面会配置阻挡环113，其为待加工基板200置放在第一电极121上时，提供止滑、稳定组件及固定位置的作用。第一电极121的最外侧，原则上是阻挡环113的外缘，会配置隔板114。隔板114是为让蚀刻气体130流动能因阻隔而让流动速率及流动方向能受到控制有效控制，同时针对性的保护第一电极121局部部分。然而，隔板114一般是平面设计，为使蚀刻气体130能确实不滞留于待加工基板200上，腔室110内部的角落一般会作留空设计，也就是不装设任何的组件，或者在设计人员需求下设置隔网。
本申请针对干蚀刻设备的电极进行优化改进，从而改善加工过程中蚀刻气体的流向，达到控制整个制程中待加工工件待加工面上不同位置接触到的蚀刻气体的量的目的，从而提高制程均一性。
使用本申请的干蚀刻设备100可以改善制程均一性。在此，主要基于加工液晶显示面板的干蚀刻设备100来描述本申请的运作方式，之后所述蚀刻制程主要以加工处理玻璃基板为主。但是需要指出的是，本申请的干蚀刻设备100应用不限于此，任何采用干蚀刻加工工艺的加工制造环节都可 以采用本申请所述的干蚀刻设备100。
图2为依据本申请的方法，一实施例应用于干蚀刻设备的电极结构示意的俯视图。请参照图2，在本申请一实施例中，所述一种干蚀刻设备100的电极，包括：电极板(以第一电极121为例)，表面包括组件放置区123及环绕所述组件放置区123的边缘区124；阻挡环113设置在所述边缘区124，位于所述组件放置区123的外围；以及，隔板114设置在所述第一电极121外缘，位于所述阻挡环113的外围，所述隔板114具有多个穿孔。
图3为依据本申请的方法，一实施例应用于干蚀刻设备的结构横截面示意图。请同时参阅图2以利于了解。如图3，在本申请一实施例中，所述一种干蚀刻设备，包括：腔室110；设置于所述腔室110的内部的基台112，原则上是设置于腔室110的底部；设置于所述基台112上的第一电极121，其表面包括组件放置区123及环绕所述组件放置区123的边缘区124；设置在所述边缘区124阻挡环113，位于所述组件放置区123的外围；设置在所述电极板外侧的隔板114，位于所述阻挡环113的外围，所述隔板114具有多个穿孔125；设置于所述腔室110的内部并与所述第一电极121对向设置的第二电极122；设置于所述腔室110内侧的进气口，所述进气口的水平位置高于所述第一电极121的水平位置，通常是设置于所述腔室110顶部的所述第二电极122处，其与进气装置配套设置而用于吹入蚀刻气体130，由于进气口的位置和所述第二电极122重合，故图3未呈现；以及，设置于所述腔室110内侧的抽气口141，其与抽气装置142配套设置而用于排出蚀刻气体130，所述抽气口141的水平位置低于所述第一电极121的水平位置，通常是设置于所述腔室110底部的所述基台112的下方。其中第一电极121与第二电极122之间存在恒定的压差，用于控制蚀刻气体130的流向。
如图2及图3所绘示，所述隔板114具有多个穿孔125，依据穿孔125设置的位置，可以限制蚀刻气体130的流动速率、方向及气体分布的均匀程度，而且蚀刻气体130可通过穿孔125穿过隔板114而流动到隔板114下方，以便由抽气口141排出腔室110，而不会被限制在腔室110的角落。
如图2绘示，在一些实施例中，所述隔板114以无间隔(或连续配置)的方式设置于所述阻挡环113的外围。
如图2绘示，在一些实施例中，所述多个穿孔125以均匀的方式设置于所述隔板114。
如图2绘示，在一些实施例中，所述多个穿孔125的形状与大小是相同。
图4为依据本申请的方法，一实施例应用于干蚀刻设备的电极结构示意的俯视图。在一些实施例中，所述隔板114以等间距的方式设置于所述阻挡环113的外围。
在一些实施例中，所述隔板114以不等间距或局部等间距的方式设置于所述阻挡环113的外围。
图5为依据本申请的方法，一实施例应用于干蚀刻设备的电极结构示意的俯视图。在一些实施 例中，所述多个穿孔125以不均匀的方式设置于所述隔板114。
在一些实施例中，所述多个穿孔125以局部均匀的方式设置于所述隔板114。
图6为依据本申请的方法，一实施例应用于干蚀刻设备的电极结构示意的俯视图。在一些实施例中，所述多个穿孔125的形状与大小是相异或局部相同。
如图2所示，在一些实施例中，所述抽气口141设置于所述腔室110的底部，与所述隔板114的开口对向设置。
在一些实施例中，所述抽气口141设置于所述腔室110的侧边，邻接所述隔板114的开口125。
本申请可以不大幅改变现有干蚀刻流程的前提，提升蚀刻气体130流动方向的均匀分布情形，避免蚀刻气体130持续朝向腔室110内部的角落流动，减少待加工基板200四角落与其他位置蚀刻程度有落差，降低不适当的负载效应产生情形，维持待加工基板200的各部分的加工均一性，提升待加工基板200的制造良率。
在不同实施例中，待加工基板200可例如为显示面板的玻璃基板或柔性基板。或者，在一些实施例中，待加工基板200可例如为半导体装置的基板。
“在一些实施例中”及“在各种实施例中”等用语被重复地使用。此用语通常不是指相同的实施例；但它也可以是指相同的实施例。“包含”、“具有”及“包括”等用词是同义词，除非其前后文意显示出其它意思。
以上所述，仅是本申请的较佳实施例而已，并非对本申请作任何形式上的限制，虽然本申请已以较佳实施例揭露如上，然而并非用以限定本申请，任何熟悉本专业的技术人员，在不脱离本申请技术方案范围内，当可利用上述揭示的技术内容作出些许更动或修饰为等同变化的等效实施例，但凡是未脱离本申请技术方案的内容，依据本申请的技术实质对以上实施例所作的任何简单修改、等同变化与修饰，均仍属于本申请技术方案的范围内。

Claims (15)

  1. 一种干蚀刻设备的电极，包括：
    电极板，表面包括组件放置区及环绕所述组件放置区的边缘区；
    阻挡环，设置在所述边缘区，位于所述组件放置区的外围；以及
    隔板，设置在所述电极板外侧，邻接所述阻挡环的外围，所述隔板具有多个穿孔。
  2. 如权利要求1所述的干蚀刻设备的电极，其中，所述隔板以等间距、不等间距、局部等间距或无间隔的方式设置于所述阻挡环的外围。
  3. 如权利要求1所述的干蚀刻设备的电极，其中，所述多个穿孔以均匀、不均匀或局部均匀的方式设置于所述隔板。
  4. 如权利要求1所述的干蚀刻设备的电极，其中，所述多个穿孔的形状与大小是相同。
  5. 如权利要求1所述的干蚀刻设备的电极，其中，所述多个穿孔的形状与大小是相异。
  6. 如权利要求1所述的干蚀刻设备的电极，其中，所述多个穿孔的形状与大小是局部相同。
  7. 一种干蚀刻设备，包括：
    腔室；
    基台，设置于所述腔室的内部；
    第一电极，设置于所述基台上，表面包括组件放置区及环绕所述组件放置区的边缘区；
    阻挡环，设置在所述边缘区，位于所述组件放置区的外围；
    隔板，设置在所述电极板外侧，邻接所述阻挡环的外围，所述隔板具有多个穿孔；
    第二电极，设置于所述腔室的内部并与所述第一电极对向设置；
    进气口，设置于所述腔室内侧，所述进气口的水平位置高于所述第一电极的水平位置；以及
    抽气口，设置于所述腔室内侧，所述抽气口的水平位置低于所述第一电极的水平位置。
  8. 如权利要求7所述的干蚀刻设备，其中，所述隔板以等间距、不等间距、局部等间距或无间隔的方式设置于所述阻挡环的外围。
  9. 如权利要求7所述的干蚀刻设备，其中，所述多个穿孔以均匀、不均匀或局部均匀的方式设置于所述隔板。
  10. 如权利要求7所述的干蚀刻设备，其中，所述多个穿孔的形状与大小是相同。
  11. 如权利要求7所述的干蚀刻设备，其中，所述多个穿孔的形状与大小是相异。
  12. 如权利要求7所述的干蚀刻设备，其中，所述多个穿孔的形状与大小是局部相同。
  13. 如权利要求7所述的干蚀刻设备，其中，所述抽气口设置于所述腔室的底部，与所述隔板的开口对向设置。
  14. 如权利要求7所述的干蚀刻设备，其中，所述抽气口设置于所述腔室的侧边，邻接所述隔板的开口。
  15. 一种干蚀刻装置，包括：
    腔室；
    基台，设置于所述腔室的内部；
    第一电极，设置于所述基台上，表面包括组件放置区及环绕所述组件放置区的边缘区；
    阻挡环，设置在所述边缘区，位于所述组件放置区的外围；
    隔板，设置在所述电极板外侧，邻接所述阻挡环的外围，所述隔板具有多个穿孔；
    第二电极，设置于所述腔室的内部并与所述第一电极对向设置；
    进气口，设置于所述腔室内侧，所述进气口的水平位置高于所述第一电极的水平位置；
    抽气口，设置于所述腔室内侧，所述抽气口的水平位置低于所述第一电极的水平位置；
    其中，所述隔板以等间距、不等间距、局部等间距或无间隔的方式设置于所述阻挡环的外围；
    其中，所述多个穿孔以均匀、不均匀或局部均匀的方式设置于所述隔板；
    其中，所述多个穿孔的形状与大小是相同、相异或局部相同；
    其中，通过所述多个穿孔，以限制蚀刻气体的流动速率、方向及气体分布的均匀程度。
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Publication number Priority date Publication date Assignee Title
CN108321101B (zh) * 2018-02-24 2020-09-11 惠科股份有限公司 一种电极组件和蚀刻设备
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101620972A (zh) * 2008-07-01 2010-01-06 东京毅力科创株式会社 等离子体处理装置
CN101982868A (zh) * 2010-09-27 2011-03-02 友达光电股份有限公司 电极结构
US20150001181A1 (en) * 2011-03-31 2015-01-01 Tokyo Electron Limited Plasma processing apparatus, plasma processing method, and storage medium
CN104752132A (zh) * 2013-12-27 2015-07-01 昆山国显光电有限公司 一种等离子刻蚀装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102157327B (zh) * 2009-12-31 2014-12-03 丽佳达普株式会社 基板处理装置的气体供给结构
CN201681788U (zh) * 2010-04-02 2010-12-22 中微半导体设备(上海)有限公司 反应腔部件及应用该反应腔部件的等离子体处理装置
JP6770935B2 (ja) * 2017-07-03 2020-10-21 日立オートモティブシステムズ株式会社 車両制御装置用の検証装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101620972A (zh) * 2008-07-01 2010-01-06 东京毅力科创株式会社 等离子体处理装置
CN101982868A (zh) * 2010-09-27 2011-03-02 友达光电股份有限公司 电极结构
US20150001181A1 (en) * 2011-03-31 2015-01-01 Tokyo Electron Limited Plasma processing apparatus, plasma processing method, and storage medium
CN104752132A (zh) * 2013-12-27 2015-07-01 昆山国显光电有限公司 一种等离子刻蚀装置

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